TW201415681A - Flat molding type light-emitting device and manufacturing method thereof - Google Patents
Flat molding type light-emitting device and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000465 moulding Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000011241 protective layer Substances 0.000 claims description 48
- 239000008393 encapsulating agent Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 14
- 235000012431 wafers Nutrition 0.000 claims description 12
- 229920005992 thermoplastic resin Polymers 0.000 claims description 10
- 239000000049 pigment Substances 0.000 claims description 6
- 239000004954 Polyphthalamide Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 229920006375 polyphtalamide Polymers 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 238000007650 screen-printing Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract 2
- 238000002955 isolation Methods 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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Abstract
Description
本發明是有關於一種壓模式發光裝置及其製造方法，且特別是有關於一種具有階梯結構之壓模式發光裝置及其製造方法。 The present invention relates to a pressure mode light-emitting device and a method of fabricating the same, and more particularly to a pressure mode light-emitting device having a stepped structure and a method of fabricating the same.
傳統壓模式發光二極體製作完成後，需要在攝氏60度及90%濕度下進行信賴性實驗。然而，傳統壓模式發光二極體在經過信賴性試驗後，其封裝膠體的轉換效率受到破壞，導致在市場上的使用壽命降低。 After the conventional pressure mode light-emitting diode is fabricated, a reliability test is required at 60 degrees Celsius and 90% humidity. However, after the reliability test of the conventional pressure mode light-emitting diode, the conversion efficiency of the package colloid is deteriorated, resulting in a decrease in the service life in the market.
本發明係有關於一種壓模式發光裝置及其製造方法，可改善壓模式發光裝置在試驗後壽命降低的問題。 The present invention relates to a pressure mode light-emitting device and a method of manufacturing the same, which can improve the problem that the life of the pressure mode light-emitting device is reduced after the test.
根據本發明之一實施例，提出一種壓模式發光裝置。壓模式發光裝置包括一基板、一發光晶片、一封裝膠體及一保護層。基板具有一階梯結構環繞於基板之表面邊緣上。發光晶片設於基板上。封裝膠體包覆發光晶片，且具有一外側面。保護層位於階梯結構上且覆蓋封裝膠體之外側面。 According to an embodiment of the invention, a pressure mode illumination device is proposed. The pressure mode light emitting device comprises a substrate, a light emitting chip, an encapsulant and a protective layer. The substrate has a stepped structure surrounding the surface edge of the substrate. The luminescent wafer is disposed on the substrate. The encapsulant encapsulates the luminescent wafer and has an outer side. The protective layer is on the stepped structure and covers the outer side of the encapsulant.
根據本發明之另一實施例，提出一種壓模式發光裝置的製造方法。製造方法包括以下步驟。提供一基板；設置數個發光晶片於基板上；形成一封裝膠體包覆此些發光晶 片；形成數個貫穿封裝膠體及基板之部分表面之切割道，使得各發光晶片周圍均被此些切割道環繞；在各切割道內分別形成一保護層；以及，在各切割道上施以一切割程序，以形成數個具有保護層的壓模式發光裝置。 According to another embodiment of the present invention, a method of fabricating a pressure mode light emitting device is presented. The manufacturing method includes the following steps. Providing a substrate; setting a plurality of light-emitting chips on the substrate; forming an encapsulant covering the light-emitting crystals Forming a plurality of dicing streets extending through a portion of the surface of the encapsulant and the substrate such that each of the illuminating wafers is surrounded by the dicing streets; forming a protective layer in each of the dicing streets; and applying a dicing on each of the dicing streets The cutting process is performed to form a plurality of pressure mode light-emitting devices having a protective layer.
為了對本發明之上述及其他方面有更佳的瞭解，下文特舉實施例，並配合所附圖式，作詳細說明如下： In order to provide a better understanding of the above and other aspects of the present invention, the following detailed description of the embodiments and the accompanying drawings
請參照第1A圖，其繪示依照本發明一實施例之壓模式發光裝置的剖視圖。壓模式發光裝置100包括基板110、發光晶片120、封裝膠體130及保護層140。保護層140可保護封裝膠體130，減少或避免封裝膠體130經過信賴性試驗或其它試驗後受到過度的破壞，藉此可提升產品壽命。以下詳細說明壓模式發光裝置100的元件。 Referring to FIG. 1A, a cross-sectional view of a pressure mode light emitting device in accordance with an embodiment of the present invention is shown. The pressure mode light emitting device 100 includes a substrate 110, a light emitting chip 120, an encapsulant 130, and a protective layer 140. The protective layer 140 protects the encapsulant 130, reducing or avoiding excessive damage of the encapsulant 130 after a reliability test or other tests, thereby increasing product life. The elements of the pressure mode light-emitting device 100 will be described in detail below.
基板110具有階梯結構111及上表面110u，其中階梯結構111環繞於基板110之上表面110u的邊緣上。此外，基板110的材料例如是金屬或陶瓷，本實施例係以金屬基板為例說明。基板110包括第一電極112、第二電極113及電性隔離件114，電性隔離件114電性隔離第一電極112與第二電極113。 The substrate 110 has a stepped structure 111 and an upper surface 110u, wherein the stepped structure 111 surrounds an edge of the upper surface 110u of the substrate 110. In addition, the material of the substrate 110 is, for example, a metal or a ceramic. This embodiment is described by taking a metal substrate as an example. The substrate 110 includes a first electrode 112, a second electrode 113, and an electrical isolation member 114. The electrical isolation member 114 electrically isolates the first electrode 112 from the second electrode 113.
發光晶片120設於基板110之上表面110u上。第一導線115連接發光晶片120與第一電極112，而第二導線116連接發光晶片120與第一電極112。另一例中，發光晶片120可以是覆晶式晶片，在此設計下可省略第一導線115及第二導線116。 The light emitting chip 120 is disposed on the upper surface 110u of the substrate 110. The first wire 115 connects the light emitting chip 120 and the first electrode 112, and the second wire 116 connects the light emitting chip 120 and the first electrode 112. In another example, the light emitting chip 120 may be a flip chip, and the first wire 115 and the second wire 116 may be omitted in this design.
封裝膠體130包覆發光晶片120，且具有外側面130s及上表面130u。保護層140具有上表面140u，其與封裝膠體130之上表面130u實質上對齊，例如是共面。此外，封裝膠體130可含有波長轉換物質，此波長轉換物質可選自螢光粉、色素、顏料、其混合物或其它合適材料。 The encapsulant 130 encloses the luminescent wafer 120 and has an outer side 130s and an upper surface 130u. The protective layer 140 has an upper surface 140u that is substantially aligned with the upper surface 130u of the encapsulant 130, such as coplanar. Additionally, encapsulant 130 may contain a wavelength converting material that may be selected from the group consisting of phosphors, pigments, pigments, mixtures thereof, or other suitable materials.
保護層140位於階梯結構111上且覆蓋封裝膠體130之外側面130s，可保護封裝膠體130，減少或避免封裝膠體130經過信賴性試驗或其它試驗後受到過度的破壞，藉此可提升產品壽命。保護層140具有遮光性，可避免發光晶片120的光線透過保護層140出光。保護層140具有外側面140s1，而基板110具有第一外側面110s1，其中保護層140之外側面140s1與基板110之第一外側面110s1實質上對齊，例如是共面。此外，保護層140具有內側面140s2，而基板110具有第二外側面110s2，其相對第一外側面110s1係內縮，也就是說，第二外側面110s2比第一外側面110s1更靠近發光晶片120。第二外側面110s2與保護層140之內側面140s2實質上對齊，例如是共面。此外，保護層140的材料包含熱塑性樹脂，例如是白色聚鄰苯二酰胺(PPA)。 The protective layer 140 is located on the stepped structure 111 and covers the outer side 130s of the encapsulant 130 to protect the encapsulant 130, thereby reducing or avoiding excessive damage of the encapsulant 130 after the reliability test or other tests, thereby improving product life. The protective layer 140 has a light-shielding property to prevent light of the light-emitting chip 120 from passing through the protective layer 140. The protective layer 140 has an outer side surface 140s1, and the substrate 110 has a first outer side surface 110s1, wherein the outer side surface 140s1 of the protective layer 140 is substantially aligned with the first outer side surface 110s1 of the substrate 110, for example, coplanar. In addition, the protective layer 140 has an inner side surface 140s2, and the substrate 110 has a second outer side surface 110s2 that is retracted relative to the first outer side surface 110s1, that is, the second outer side surface 110s2 is closer to the light emitting chip than the first outer side surface 110s1. 120. The second outer side 110s2 is substantially aligned with the inner side 140s2 of the protective layer 140, such as coplanar. Further, the material of the protective layer 140 contains a thermoplastic resin such as white polyphthalamide (PPA).
請參照第1B圖，其繪示第1A圖之俯視圖。保護層140呈一封閉環形環繞發光晶片120，且定義出壓模式發光裝置100的邊界。另一例中，保護層140亦可呈一開放環形。 Please refer to FIG. 1B, which shows a top view of FIG. 1A. The protective layer 140 surrounds the light emitting wafer 120 in a closed loop and defines the boundaries of the pressure mode light emitting device 100. In another example, the protective layer 140 can also have an open loop shape.
請參照第2A至2I圖，其繪示依照本發明一實施例之壓模式發光裝置的製造過程圖。 Please refer to FIGS. 2A to 2I for illustrating a manufacturing process diagram of a pressure mode light-emitting device according to an embodiment of the present invention.
如第2A圖所示，提供基板110，其中基板110包括至少一電性隔離件114，且定義至少一第一電極112及至少一第二電極113，其中電性隔離件114形成於第一電極112與第二電極113之間。 As shown in FIG. 2A, a substrate 110 is provided, wherein the substrate 110 includes at least one electrical isolation member 114, and defines at least a first electrode 112 and at least a second electrode 113, wherein the electrical isolation member 114 is formed on the first electrode. 112 is between the second electrode 113.
如第2B圖所示，設置至少一發光晶片120於基板110之上表面110u上，並以第一導線115連接發光晶片120與第一電極112，而以第二導線116連接發光晶片120與第二電極113。 As shown in FIG. 2B, at least one light emitting chip 120 is disposed on the upper surface 110u of the substrate 110, and the light emitting chip 120 and the first electrode 112 are connected by the first wire 115, and the light emitting chip 120 is connected by the second wire 116. Two electrodes 113.
如第2C圖所示，可採用例如是模壓製程，形成封裝膠體130包覆發光晶片120、第一導線115及第二導線116。 As shown in FIG. 2C, the encapsulant 130 can be formed to cover the luminescent wafer 120, the first conductive line 115, and the second conductive line 116 by, for example, a molding process.
如第2D圖所示，可採用例如是機械或雷射鑽孔製程，形成數個切割道P1，其中切割道P1貫穿封裝膠體130及基板110之部分厚度，各發光晶片120周圍被對應的切割道P1環繞。本例中，從第2D圖的俯視方向看去，環繞發光晶片120的切割道P1呈封閉環形，然亦可呈開放環形。此外，切割道P1於基板110形成階梯結構111及第二外側面110s2，且於封裝膠體130形成外側面130s，其中外側面130s與第二外側面110s2實質上對齊，例如是共面。 As shown in FIG. 2D, a plurality of dicing streets P1 may be formed by, for example, a mechanical or laser drilling process, wherein the dicing streets P1 penetrate a portion of the thickness of the encapsulant 130 and the substrate 110, and the respective luminescent wafers 120 are cut correspondingly. Road P1 surrounds. In this example, the scribe line P1 surrounding the illuminating wafer 120 is closed in a ring shape as seen in the plan view of the 2D drawing, but may be in an open loop shape. In addition, the scribe line P1 forms a stepped structure 111 and a second outer side surface 110s2 on the substrate 110, and forms an outer side surface 130s on the encapsulant 130, wherein the outer side surface 130s is substantially aligned with the second outer side surface 110s2, for example, coplanar.
接下來，可採用下列步驟在各切割道P1內分別形成保護層140。 Next, the protective layer 140 may be separately formed in each of the dicing streets P1 by the following steps.
如第2E圖所示，提供網版150，其具有數個溝槽151。 As shown in FIG. 2E, a screen 150 is provided having a plurality of grooves 151.
如第2E圖所示，放置網版150於封裝膠體130上，網版150之各溝槽151的位置位在所對應之切割道P1上。 As shown in FIG. 2E, the screen 150 is placed on the encapsulant 130, and the positions of the grooves 151 of the screen 150 are located on the corresponding dicing streets P1.
如第2F圖所示，透過網版150之溝槽151，填充保護層材料140’於切割道P1內，詳細來說，是使用網版150 印刷保護層材料140’於封裝膠體130之上表面130u及溝槽151中。另一例中，可用刮刀或其它合適工具把保護層材料140’擠入切割道P1內。另一例中，亦可省略網版150，直接形成保護層材料140’全面地覆蓋封裝膠體130之上表面130u及切割道P1。此外，保護層材料140’例如是熱塑性樹脂。本例中，溝槽151的寬度大於切割道P1的寬度，然亦可小於或實質上等於切割道P1的寬度。 As shown in FIG. 2F, the protective layer material 140' is filled in the scribe line P1 through the trench 151 of the screen 150. Specifically, the screen 150 is used. The protective cover material 140' is in the upper surface 130u of the encapsulant 130 and the trench 151. In another example, the protective layer material 140' can be extruded into the scribe line P1 by a doctor blade or other suitable tool. In another example, the screen 150 may be omitted, and the protective layer material 140' directly covers the upper surface 130u of the encapsulant 130 and the dicing street P1. Further, the protective layer material 140' is, for example, a thermoplastic resin. In this example, the width of the groove 151 is greater than the width of the scribe line P1, but may be less than or substantially equal to the width of the scribe line P1.
然後，移除網版150。 Then, the screen 150 is removed.
然後，如第2G圖所示，施加熱量H於保護層材料140’(第2F圖)上，以固化充保護層材料140’，而形成保護層140。 Then, as shown in Fig. 2G, heat H is applied to the protective layer material 140' (Fig. 2F) to cure the protective layer material 140' to form the protective layer 140.
如第2H圖所示，可採用例如是拋光方式、機械加工、化學方法或其它合適移除製程，移除形成於封裝膠體130之上表面130u的保護層141。拋光後，保護層140形成上表面140u，其與封裝膠體130之上表面130u實質上對齊，例如是共面。 As shown in FIG. 2H, the protective layer 141 formed on the upper surface 130u of the encapsulant 130 may be removed by, for example, polishing, machining, chemical, or other suitable removal process. After polishing, the protective layer 140 forms an upper surface 140u that is substantially aligned with the upper surface 130u of the encapsulant 130, such as coplanar.
如第2I圖所示，對應各切割道P1的位置，形成切割道P2貫穿保護層140及基板110，以形成至少一具有保護層140的壓模式發光裝置100。切割道P2形成後，保護層140及基板110分別形成外側面140s1及第一外側面110s1，其中外側面140s1與第一外側面110s1實質上對齊，例如是共面。此外，切割道P2可從基板110往保護層140的方向先後貫穿基板110及保護層140，然亦可從保護層140往基板110的方向先後貫穿保護層140及基板110。 As shown in FIG. 2I, the dicing street P2 is formed to penetrate the protective layer 140 and the substrate 110 corresponding to the position of each scribe line P1 to form at least one pressure mode light-emitting device 100 having the protective layer 140. After the dicing road P2 is formed, the protective layer 140 and the substrate 110 respectively form an outer side surface 140s1 and a first outer side surface 110s1, wherein the outer side surface 140s1 is substantially aligned with the first outer side surface 110s1, for example, coplanar. In addition, the dicing street P2 may penetrate the substrate 110 and the protective layer 140 from the substrate 110 to the protective layer 140, but may also penetrate the protective layer 140 and the substrate 110 from the protective layer 140 to the substrate 110.
綜上所述，雖然本發明已以實施例揭露如上，然其並 非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the present invention has been disclosed above by way of example, It is not intended to limit the invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
100‧‧‧壓模式發光裝置 100‧‧‧pressure mode illuminator
110‧‧‧基板 110‧‧‧Substrate
111‧‧‧階梯結構 111‧‧‧step structure
110u、130u、140u‧‧‧上表面 110u, 130u, 140u‧‧‧ upper surface
110s1‧‧‧第一外側面 110s1‧‧‧ first outer side
110s2‧‧‧第二外側面 110s2‧‧‧Second outer side
112‧‧‧第一電極 112‧‧‧First electrode
113‧‧‧第二電極 113‧‧‧second electrode
114‧‧‧電性隔離件 114‧‧‧Electrical insulation
115‧‧‧第一導線 115‧‧‧First wire
116‧‧‧第二導線 116‧‧‧second wire
120‧‧‧發光晶片 120‧‧‧Lighting chip
130‧‧‧封裝膠體 130‧‧‧Package colloid
130s、140s1‧‧‧外側面 130s, 140s1‧‧‧ outside
140、141‧‧‧保護層 140, 141‧‧ ‧ protective layer
140'‧‧‧保護層材料 140'‧‧‧Protective material
140s2‧‧‧內側面 140s2‧‧‧ inside side
150‧‧‧網版 150‧‧‧Web Edition
151‧‧‧溝槽 151‧‧‧ trench
H‧‧‧熱量 H‧‧‧heat
P1、P2‧‧‧切割道 P1, P2‧‧‧ cutting road
第1A圖繪示依照本發明一實施例之壓模式發光裝置的剖視圖。 1A is a cross-sectional view of a pressure mode light emitting device in accordance with an embodiment of the present invention.
第1B圖繪示第1A圖之俯視圖。 Fig. 1B is a plan view showing Fig. 1A.
第2A至2I圖繪示依照本發明一實施例之壓模式發光 裝置的製造過程圖。 2A to 2I illustrate a pressure mode illumination according to an embodiment of the invention Diagram of the manufacturing process of the device.
100‧‧‧壓模式發光裝置 100‧‧‧pressure mode illuminator
110‧‧‧基板 110‧‧‧Substrate
111‧‧‧階梯結構 111‧‧‧step structure
110u、130u、140u‧‧‧上表面 110u, 130u, 140u‧‧‧ upper surface
110s1‧‧‧第一外側面 110s1‧‧‧ first outer side
110s2‧‧‧第二外側面 110s2‧‧‧Second outer side
112‧‧‧第一電極 112‧‧‧First electrode
113‧‧‧第二電極 113‧‧‧second electrode
114‧‧‧電性隔離件 114‧‧‧Electrical insulation
115‧‧‧第一導線 115‧‧‧First wire
116‧‧‧第二導線 116‧‧‧second wire
120‧‧‧發光晶片 120‧‧‧Lighting chip
130‧‧‧封裝膠體 130‧‧‧Package colloid
130s、140s1‧‧‧外側面 130s, 140s1‧‧‧ outside
140‧‧‧保護層 140‧‧‧Protective layer
140s2‧‧‧內側面 140s2‧‧‧ inside side
Claims (16)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101137048A TW201415681A (en) | 2012-10-08 | 2012-10-08 | Flat molding type light-emitting device and manufacturing method thereof |
| CN201310019857.3A CN103715332A (en) | 2012-10-08 | 2013-01-18 | Press-mode light emitting device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101137048A TW201415681A (en) | 2012-10-08 | 2012-10-08 | Flat molding type light-emitting device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201415681A true TW201415681A (en) | 2014-04-16 |
Family
ID=50408133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101137048A TW201415681A (en) | 2012-10-08 | 2012-10-08 | Flat molding type light-emitting device and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103715332A (en) |
| TW (1) | TW201415681A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205038923U (en) * | 2015-09-02 | 2016-02-17 | 佛山市国星光电股份有限公司 | COB display module |
| TW201828505A (en) * | 2017-01-20 | 2018-08-01 | 聯京光電股份有限公司 | Optoelectronic package and fabricating the same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5219331B2 (en) * | 2005-09-13 | 2013-06-26 | 株式会社住田光学ガラス | Method for manufacturing solid element device |
| EP2221885A4 (en) * | 2007-11-19 | 2013-09-25 | Panasonic Corp | Semiconductor light emitting device and method for manufacturing semiconductor light emitting device |
| WO2011059137A1 (en) * | 2009-11-16 | 2011-05-19 | (주)포인트 엔지니어링 | Optical element device and a production method therefor |
-
2012
- 2012-10-08 TW TW101137048A patent/TW201415681A/en unknown
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- 2013-01-18 CN CN201310019857.3A patent/CN103715332A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN103715332A (en) | 2014-04-09 |
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