TW201415495A - 異方性導電膜及其製備方法 - Google Patents

異方性導電膜及其製備方法 Download PDF

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Publication number
TW201415495A
TW201415495A TW101137596A TW101137596A TW201415495A TW 201415495 A TW201415495 A TW 201415495A TW 101137596 A TW101137596 A TW 101137596A TW 101137596 A TW101137596 A TW 101137596A TW 201415495 A TW201415495 A TW 201415495A
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Taiwan
Prior art keywords
layer
conductive film
insulating
anisotropic conductive
substrate
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TW101137596A
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English (en)
Inventor
Chang-Chin Wu
Pei-Rong Shieh
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Hon Hai Prec Ind Co Ltd
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Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW101137596A priority Critical patent/TW201415495A/zh
Priority to US14/030,065 priority patent/US20140106160A1/en
Publication of TW201415495A publication Critical patent/TW201415495A/zh

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    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
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    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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Abstract

一種異方性導電膜，其包括基板、形成於該基板一側面之絕緣膠層，該絕緣膠層內分佈有複數導電粒子。該導電粒子包括球形基體、形成於該球形基體表面之導電層及形成於該導電層表面之含有陶瓷材料之絕緣層，該絕緣層受到外力擠壓時能夠脆裂以部分裸露出該導電層。本發明還提供一種用於製備該異方性導電膜之方法。

Description

異方性導電膜及其製備方法
本發明涉及一種導電膜，尤其涉及一種異方性導電膜及其製備方法。
異方性導電膜（Anisotropic Conductive Film, ACF）具有垂直導通以及橫向絕緣之特性，其主要用在不適合高溫鉛錫焊接制程之液晶面板中，用於連接液晶面板以及驅動晶片。異方性導電膜一般包括一基板以及一形成於基底表面之絕緣膠層，絕緣膠層內分佈有複數導電粒子。先前之異方性導電膜將摻雜有導電粒子之絕緣膠直接塗敷於基板上，因此，導電粒子隨機分佈於絕緣膠層內，分佈之密度以及深度難以控制。異方性導電膜經裁切、捲曲等外力作用時，導電粒子因受外力作用而發生移動，造成部分導電粒子堆聚，而導致橫向佈置之電極之間發生短路現象。
有鑒於此，有必要提供一種能夠避免橫向短路之異方性導電膜及其製備方法。
一種異方性導電膜，其包括基板、形成於該基板一側面之絕緣膠層，該絕緣膠層內分佈有複數導電粒子。該導電粒子包括球形基體、形成於該球形基體表面之導電層及形成於該導電層表面之含有陶瓷材料之絕緣層，該絕緣層受到外力擠壓時能夠脆裂以部分裸露出該導電層。
一種異方性導電膜之製備方法，其包括以下步驟：
提供一基板；
提供複數球形基體；
在該球形基體上形成導電層；
在該導電層上形成含有陶瓷材料之絕緣層以形成導電粒子；
提供絕緣膠液，並將該導電粒子與該絕緣膠液混合均勻；
將上述混合有導電粒子之該絕緣膠液均勻塗覆於該基板上；及
固化該絕緣膠液以形成絕緣膠層。
由於異方性導電膜之導電粒子包括披覆於導電層表面之絕緣層，當異方性導電膜受裁切、捲曲等外力作用時，避免了因導電粒子橫向堆聚造成異方性導電膜橫向短路；同時，該絕緣層受到外力擠壓時能夠脆裂以部分裸露出該導電層，從而保證該異方性導電膜垂直導通。
下面將結合附圖及具體實施方式對本發明之異方性導電膜及其製備方法作進一步之詳細說明。
請參閱圖1，本發明實施方式之異方性導電膜100包括一基板10及一形成於基板10一側表面之絕緣膠層20，絕緣膠層20內分佈有複數導電粒子30。
基板10用作絕緣膠層20之載體，基板10採用絕緣材料製成。本實施方式中，基板10由聚對苯二甲酸乙二醇酯（polyethylene terephthalate, PET）製成。
絕緣膠層20由熱固性樹脂材料構成。本實施方式中，絕緣膠層20係環氧樹脂。
導電粒子30均勻分佈於絕緣膠層20內，橫向排布之導電粒子30之間相互間隔設置，此處“橫向”定義係大致平行於基板10之方向。
請同時參閱圖2及圖3，本實施方式中，導電粒子30包括球形基體301、形成於球形基體301表面之導電層303及形成於導電層303表面之絕緣層305。球形基體301可以由樹脂、玻璃或陶瓷材料製成。導電層303可以由鎳、金、鋁、銅等金屬形成。絕緣層305係脆硬材料層，其受到外力擠壓時能夠發生脆裂從而部分裸露出導電層303。絕緣層305可以由二氧化矽（SiO2）、二氧化鈦（TiO2）、氮化矽（Si3N4）、二氧化鋯（ZrO2）等陶瓷材料形成，或由二氧化矽（SiO2）、二氧化鈦（TiO2）、氮化矽（Si3N4）、二氧化鋯（ZrO2）等陶瓷材料與聚對苯二甲酸乙二醇酯（PET）、聚對苯二甲酸丁二醇酯（polybutylene terephthalate, PBT）、聚醚醚酮（polyaryletherketone, PEEK）、聚醚醯亞胺（polyetherimide, PEI）、聚醯亞胺（polyimide, PI）、聚四氟乙烯（polytetrafluoroethylene，PTFE）、聚氨基甲酸酯（polyurethane, PU）或聚碳酸酯（polycarbonate , PC）等絕緣樹脂混合形成。本實施方式中，球形基體301由樹脂材料製成，導電層303係鎳層，絕緣層305由二氧化矽（SiO2）形成。
由於異方性導電膜100使用時，異方性導電膜100之上下表面受到液晶面板以及驅動晶片之擠壓，因此，導電粒子30之上下兩端之絕緣層305因受到外力擠壓發生脆裂並部分裸露出導電層303，從而實現垂直導通；同時，因導電粒子30之橫向之導電層303上仍然披覆有絕緣層305，從而避免了因導電粒子30之間之橫嚮導通而造成之短路。
請參閱圖4，本發明實施方式之異方性導電膜100之製作方法包括以下步驟：
S201：提供一基板10。本實施方式中，基板10係PET材料製成。
S202：提供複數球形基體301。球形基體301可以由樹脂、玻璃或陶瓷材料製成。本實施方式中，球形基體301由玻璃製成。
S203：在球形基體301上形成導電層303。導電層303可以由鎳、金、鋁、銅等金屬形成。導電層303可經由物理方法(如鍍膜法)亦或由化學還原法形成，即為將各種具有保護基或不具有保護基之溶液中之各種氧化態之金屬離子，藉由還原劑將金屬離子還原成零價金屬以形成導電層303，或採用電化學方法於基體301表面形成導電層303。本實施方式中，導電層303係經由簡易之化學還原法形成之金屬層，其條件為：溫度控制在110-130℃範圍內，將基體301在含有0.1mol/L之氯金酸中(HAuCl4)及0.03mol/L之檸檬酸鈉反應30min後，即可在基體301表面形成一層金層，金層之厚度為20-40μm。
S204：在導電層303上形成絕緣層305以形成導電粒子30。絕緣層305可以由二氧化矽（SiO2）、二氧化鈦（TiO2）、氮化矽（Si3N4）、二氧化鋯（ZrO2）等陶瓷材料形成。於導電層303上形成由陶瓷材料形成之絕緣層305之方法可以為溶膠-凝膠法（sol-gel method）、共沉澱(co-precipitation)法及水熱法(hydrothermal)等。絕緣層305亦可由二氧化矽（SiO2）、二氧化鈦（TiO2）、氮化矽（Si3N4）、二氧化鋯（ZrO2）等陶瓷材料與聚對苯二甲酸乙二醇酯（PET）、聚對苯二甲酸丁二醇酯（PBT）、聚醚醚酮（PEEK）、聚醚醯亞胺（PEI）、聚醯亞胺（PI）、聚四氟乙烯（PTFE）、聚氨基甲酸酯（PU）或聚碳酸酯（PC）等絕緣樹脂混合形成，在導電層303表面改質後進行聚合反應，其形成過程為先將無機陶瓷粒子分散於絕緣樹脂之單體中，隨後在其導電層303表面形成聚合反應，形成之由陶瓷材料與樹脂混合之絕緣層305之體積為球形基體301之體積之0.1~70%為佳。本實施方式中，絕緣層305由二氧化矽（SiO2）形成。本實施方式中以溶膠-凝膠法為例，其過程為將披覆有導電層303之球形基體301分散在含有四乙氧基矽烷（Tetraethylorthosilicate，TEOS）起始劑之溶液中，進行水解與縮合之反應，從而於導電層303上披覆一層絕緣層305，絕緣層305之體積為球形基體301之體積之0.2%~70%為佳。
S205：提供絕緣膠液，並將導電粒子30與絕緣膠液混合均勻。本實施方式中，絕緣膠液係環氧樹脂溶液。
S206：將上述混合有導電粒子30之絕緣膠液均勻塗覆於基板10上。本實施方式中，導電粒子30呈單層結構均勻塗覆於基板10上。
S207：固化絕緣膠液以形成絕緣膠層20。本實施方式中，環氧樹脂係熱固性樹脂，採用熱固化方式固化環氧樹脂。
本發明之異方性導電膜100之導電粒子30包括塗覆於導電層303表面之絕緣層305。由於絕緣層305由陶瓷材料或陶瓷材料與絕緣樹脂混合製成，絕緣層305硬度高，易發生脆裂。使用時，異方性導電膜100之上下表面受到外力擠壓，使得絕緣層305之上下兩端因受到外力擠壓而發生脆裂，從而裸露出導電層303，以實現垂直導通；同時，由於導電粒子30之橫向之導電層303被絕緣層305之覆蓋，即使導電粒子30堆聚，也能夠有效避免因導電粒子30之間之橫嚮導通。
綜上所述，本發明符合發明專利要件，爰依法提出專利申請。惟，以上所述者僅係本發明之較佳實施例，舉凡熟悉本案技藝之人士，在爰依本發明精神所作之等效修飾或變化，皆應涵蓋於以下之如申請專利範圍內。
100．．．異方性導電膜
10．．．基板
20．．．絕緣膠層
30．．．導電粒子
301．．．球形基體
303．．．導電層
305．．．絕緣層
圖1係本發明實施方式之異方性導電膜之結構示意圖。
圖2係圖1所示異方性導電膜之導電粒子之結構示意圖。
圖3係圖2所示導電粒子脆裂後之結構示意圖。
圖4係圖1所示異方性導電膜之製備方法之流程圖。
100．．．異方性導電膜
10．．．基板
20．．．絕緣膠層
30．．．導電粒子

Claims (9)

  1. 一種異方性導電膜，其包括基板、形成於該基板一側面之絕緣膠層，該絕緣膠層內分佈有複數導電粒子，其改良在於：該導電粒子包括球形基體、形成於該球形基體表面之導電層及形成於該導電層表面之含有陶瓷材料之絕緣層，該絕緣層受到外力擠壓時能夠脆裂以部分裸露出該導電層。
  2. 如申請專利範圍第1項所述之異方性導電膜，其中該陶瓷材料係二氧化矽、二氧化鈦、氮化矽或二氧化鋯。
  3. 如申請專利範圍第1項所述之異方性導電膜，其中該絕緣層還包括絕緣樹脂材料。
  4. 如申請專利範圍第1項所述之異方性導電膜，其中該絕緣層為陶瓷層，該陶瓷層之體積為球形基體之體積之0.1~70%。
  5. 一種異方性導電膜之製備方法，其包括以下步驟：
    提供一基板；
    提供複數球形基體；
    在該球形基體上形成導電層；
    在該導電層上形成含有陶瓷材料之絕緣層以形成導電粒子；
    提供絕緣膠液，並將該導電粒子與該絕緣膠液混合均勻；
    將上述混合有導電粒子之該絕緣膠液均勻塗覆於該基板上；及
    固化該絕緣膠液以形成絕緣膠層。
  6. 如申請專利範圍第5項所述之異方性導電膜之製備方法，其中該絕緣層還包括絕緣樹脂材料。
  7. 如申請專利範圍第5項所述之異方性導電膜之製備方法，其中該絕緣層為陶瓷層，該陶瓷層之體積為球形基體之體積之0.1~70%。
  8. 如申請專利範圍第7項所述之異方性導電膜之製備方法，其中形成該陶瓷層的方法為溶膠-凝膠法。
  9. 如申請專利範圍第5項所述之異方性導電膜之製備方法，其中形成該導電層之方法為鍍膜法。
TW101137596A 2012-10-12 2012-10-12 異方性導電膜及其製備方法 TW201415495A (zh)

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CN113285255A (zh) * 2021-05-21 2021-08-20 苏州鑫导电子科技有限公司 具有绝缘丝的异方性导电膜
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CN113046004A (zh) * 2021-03-23 2021-06-29 业成科技（成都）有限公司 异方性导电胶及贴合方法
CN113285255A (zh) * 2021-05-21 2021-08-20 苏州鑫导电子科技有限公司 具有绝缘丝的异方性导电膜
CN114864138A (zh) * 2022-06-01 2022-08-05 业泓科技(成都)有限公司 改善超声波指纹识别的复层导电膜及其制备方法
CN114864138B (zh) * 2022-06-01 2023-06-09 业泓科技(成都)有限公司 改善超声波指纹识别的复层导电膜及其制备方法

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