TW201405577A - Monochromator for charged particle beam apparatus - Google Patents

Monochromator for charged particle beam apparatus Download PDF

Info

Publication number
TW201405577A
TW201405577A TW102119903A TW102119903A TW201405577A TW 201405577 A TW201405577 A TW 201405577A TW 102119903 A TW102119903 A TW 102119903A TW 102119903 A TW102119903 A TW 102119903A TW 201405577 A TW201405577 A TW 201405577A
Authority
TW
Taiwan
Prior art keywords
dispersion
monochromator
energy
particle beam
charged particle
Prior art date
Application number
TW102119903A
Other languages
Chinese (zh)
Other versions
TWI492244B (en
Inventor
Wei-Ming Ren
Zhong-Wei Chen
Original Assignee
Hermes Microvision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/551,947 external-priority patent/US8592761B2/en
Application filed by Hermes Microvision Inc filed Critical Hermes Microvision Inc
Publication of TW201405577A publication Critical patent/TW201405577A/en
Application granted granted Critical
Publication of TWI492244B publication Critical patent/TWI492244B/en

Links

Abstract

This invention provides a monochromator for reducing energy spread of a primary charged particle beam in charged particle apparatus, which comprises a beam adjustment element, two Wien-filter type dispersion units and a particle-blockage unit. In the monochromator, a dual proportional-symmetry in deflection dispersion and fundamental trajectory along a straight optical axis is formed, which not only fundamentally avoids incurring off-axis aberrations that actually can not be compensated but also ensures the exit beam have a virtual crossover which is stigmatic, dispersion-free and inside the monochromator. Therefore, using the monochromator in SEM can reduce chromatic aberrations without additionally incurring adverse impacts, so as to improve the ultimate imaging resolution. The improvement of the ultimate imaging resolution will be more distinct for Low-Voltage SEM and the related apparatuses which are based on LVSEM principle, such as the defect inspection and defect review in semiconductor yield management. The present invention also provides two ways to build a monochromator into a SEM, one is to locate a monochromator between the electron source and the condenser, and another is to locate a monochromator between the beam-limit aperture and the objective. The former provides an additional energy-angle depending filtering, and obtains a smaller effective energy spread.

Description

帶電粒子束裝置之單色器Monochromator with charged particle beam device

本發明係關於一種帶電粒子束裝置,特別是關於一種將帶電粒子束過濾成小能量散佈的單色器。本發明同時關於一種適於使用此裝置的帶電粒子束設備。儘管如此,應該理解的是本發明具有更廣泛的適用範圍。This invention relates to a charged particle beam apparatus, and more particularly to a monochromator that filters a charged particle beam into a small energy dispersion. The invention also relates to a charged particle beam apparatus suitable for use with such a device. Nevertheless, it should be understood that the invention has a broader scope of applicability.

在應用電子顯微鏡原理觀察樣品的掃描式電子顯微鏡以及相關的工業領域中,例如半導體製造中的良率管理的缺陷檢視及缺陷檢查,需要獲得具有高解析度的試片影像並要求低輻射損壞。In the scanning electron microscope for observing samples by the principle of electron microscopy and related industrial fields, such as defect inspection and defect inspection in yield management in semiconductor manufacturing, it is required to obtain a high-resolution test piece image and require low radiation damage.

減少試片樣品輻射損壞的唯一解決方式就是使用一低能量(或一般在掃描式電子顯微鏡領域稱為低電壓)電子束掃描(<5keV),但卻會限制電子束試片表面下的穿透力以及試片表面的殘餘電荷累積。不過由於低能量電子束會形成一比高能量電子束大的探針點使得解析度變差。The only solution to reduce radiation damage in test strip samples is to use a low-energy (or generally low-voltage) electron beam scan (<5 keV) in the field of scanning electron microscopy, but it limits the penetration under the surface of the electron beam test strip. Force and residual charge accumulation on the surface of the test piece. However, since the low-energy electron beam forms a probe point larger than the high-energy electron beam, the resolution is deteriorated.

試片表面上的探針點直徑係由成像系統中的電子源的大小、 球狀相差與色散像差、繞射與庫侖效應(Coulombeffect)決定。對於低能量電子束而言,可實現最小探針點尺寸受限於導因於較大之德布羅伊波長(de Broglie wavelength)l的繞射圓平面及導因於較大之相對能量散佈dV/V0的色散像差。兩者分別顯示於方程式 (1.1)與 (1.2)。此處CAC是色散像差係數,V0及dV是電子能量及能量散佈,a是粒子束半角。很明顯的是,要減小探針點尺寸,減少能量散佈及降低色散像差係數是另一個選項, The diameter of the probe spot on the surface of the test piece is determined by the size of the electron source in the imaging system, the spherical phase difference and dispersion aberration, the diffraction and the Coulomb effect. For low-energy electron beams, the minimum probe spot size that can be achieved is limited by the diffraction circle caused by the larger de Broglie wavelength and due to the larger relative energy spread. Dispersion aberration of dV/V 0 . The two are shown in equations (1.1) and (1.2), respectively. Here CA C is the dispersion aberration coefficient, V0 and dV are electron energy and energy dispersion, and a is the particle beam half angle. It is obvious that reducing the probe spot size, reducing the energy spread and reducing the dispersion aberration coefficient is another option.

電子束之能量散佈係來自原始能量散佈,原始能量散佈係由當電子從一電子源射出且由電子源到目標途中電子之間統計上的交互作用造成之疊加能量散佈(Boersch effect)而生成。電子能量散佈通常有ㄧ具有長尾巴的形狀,且電子束的能量散佈通常以FWHM(Full WidthHalf Maximum) (完整寬度一半最大值)來表示。蕭特基場發射源(Schottky Field Emission Source)廣泛應用於低電壓掃描式電子顯微鏡 (LVSEM),在陰極的能量散佈 dV 是 0.3 eV,且取決於粒子束電流,在電子槍出口處增加到 0.5-1 eV。對於低能電子束如1 keV而言,此一能量散佈值大小意味著一相對的能量散佈dV/V0較例如10keV的高能電子束大得多。The energy dispersion of the electron beam is derived from the original energy dispersion, which is generated by the superimposed energy spread caused by the statistical interaction between electrons emanating from an electron source and electrons from the electron source to the target. The electron energy dispersion usually has a shape with a long tail, and the energy dispersion of the electron beam is usually expressed by FWHM (Full Width Half Maximum). The Schottky Field Emission Source is widely used in low voltage scanning electron microscopy (LVSEM) where the energy spread dV at the cathode is 0.3 eV and, depending on the beam current, increases to 0.5 at the exit of the electron gun. 1 eV. For low energy electron beams such as 1 keV, this energy dispersion value means that a relative energy spread dV/V 0 is much larger than a high energy electron beam such as 10 keV.

目前提供了很多的解決方案以減少電子落在試片前的能量散佈 dV。在這些解決方案中,磁性及/或靜電折射器(例如 Alpha 過濾器、 omega過濾器及Wien過濾器)及靜電圓透鏡(例如美國專利第7034315號)被用作為分散元件。這些元件的共同點在於當偏折電子束時產生折射散佈。在這些解決方案之中只有Wien過濾器具有一直光軸且不會將具有正常能量的電子偏折遠離光軸。這一特性使Wien過濾器易於準備並且不會產生實際上無法獲得完全補償的離軸相差,因此許多提出的解決方案都是基於Wien過濾器。A number of solutions are currently available to reduce the energy spread dV of electrons before the test strip. In these solutions, magnetic and/or electrostatic refractors (e.g., Alpha filters, omega filters, and Wien filters) and electrostatic circular lenses (e.g., U.S. Patent No. 7,034,415) are used as dispersing elements. What these elements have in common is that a refractive dispersion occurs when the electron beam is deflected. Of these solutions, only the Wien filter has a constant optical axis and does not deflect electrons with normal energy away from the optical axis. This feature makes the Wien filter easy to prepare and does not produce off-axis phase differences that are virtually impossible to achieve fully compensated, so many of the proposed solutions are based on Wien filters.

如第一圖中所示,在一標準Wien過濾器的基本配置中,ㄧ沿X 方向的靜電偶極場E及一沿Y 方向磁偶極場B 彼此垂直疊加,且兩者都垂直於一直光軸Z。一電子束沿光軸 Z穿過Wien過濾器。Wien條件只有當電子以速度0v沿Z方向移動時為真,如方程式(1.3) 中所示,此處對每個電子的淨羅侖茲力 F是零。對於具有自速度0v的速度變化量d v沿Z 方向移動的電子而言,其獲得沿X 方向非零淨羅侖茲力 F,如以正常的電子能量0V 及能量變化量d V表示的方程式 (1.4) 或(1.5)中所示,且將在X 方向被折射且因此被轉向遠離 Z 方向。此處 e及m 分別是電子的電荷與質量。折射角度α取決於能量變化量d V及有關於磁場 B 與正常能量 V0的折射功率 K,如方程式(1.6)中所示。因此,Wien過濾器將產生折射散佈,而折射功率 K代表分散強度。為清楚起見,此處折射功率 K及偏折方向分別稱為分散功率及分散方向。在此情況下對於速度0v的電子而言無離軸的像差發生。 As shown in the first figure, in a basic configuration of a standard Wien filter, the electrostatic dipole field E along the X direction and the magnetic dipole field B along the Y direction are vertically superimposed on each other, and both are perpendicular to the Optical axis Z. An electron beam passes through the Wien filter along the optical axis Z. The Wien condition is true only when the electron moves in the Z direction at a speed of 0 v, as shown in equation (1.3), where the net Lorentz force F for each electron is zero. For an electron moving in the Z direction with a velocity variation d v from velocity 0 v, it obtains a non-zero net Lorentz force F along the X direction, as expressed by the normal electron energy 0 V and the energy variation amount d V The equation (1.4) or (1.5) is shown and will be refracted in the X direction and therefore turned away from the Z direction. Here e and m are the charge and mass of the electron, respectively. The angle of refraction α depends on the amount of change in energy d V and on the refractive power K of the magnetic field B and the normal energy V0 as shown in equation (1.6). Therefore, the Wien filter will produce a refractive dispersion, and the refractive power K represents the dispersion strength. For the sake of clarity, the refractive power K and the direction of deflection here are referred to as the dispersion power and the dispersion direction, respectively. In this case, no off-axis aberration occurs for electrons of speed 0 v.

對於每個具有正常能量但不是在YOZ平面中移動的電子而言,將獲得一種來自靜電場的電位改變。因此,當其穿過Wien過濾器時速度將不同於0v如(1.7)所示,並且會獲得非零淨羅侖茲力如(1.8)中所示。淨羅侖茲力與電子位置 x成正比,因此在 X 方向(分散方向)的聚焦效應存在。分散方向的聚焦效應將生成像散聚焦(astigmatic focusing),並同時減少的離軸電子的折射角度。後者意謂著分散功率降低。 For each electron that has normal energy but is not moving in the YOZ plane, a change in potential from the electrostatic field will be obtained. Therefore, when it passes through the Wien filter, the speed will be different from 0 v as shown in (1.7), and a non-zero net Lorentz force will be obtained as shown in (1.8). The net Lorentz force is proportional to the electron position x, so the focusing effect in the X direction (dispersion direction) exists. The focusing effect of the dispersion direction will produce astigmatic focusing and at the same time reduce the angle of refraction of off-axis electrons. The latter means a reduction in distributed power.

Wien過濾器在許多方面被應用做為單色器或能量過濾器,其中能量過濾以及能量角度過濾為兩種典型方法。在如第二a圖所示的能量過濾中,一來自電子源 1的粒子束2 藉由圓形透鏡10及或Wien過濾器 11 本身(例如,美國專利第6452169號、美國專利第 6580073號、美國專利第6960763號及美國專利第7507956號)聚焦,在能量限制孔徑 12 上形成像散的影像。具有能量 V0的電子形成聚焦到光軸的次電子束3,同時能量為V0±dV的電子分別形成分別在±X方向偏折且聚焦遠離光軸的次電子束 4及5。因此,在粒子束 2內,其能量變化量在±dV內的所有電子將通過孔徑 12,其餘電子將被擋下。Wien filters are used in many ways as monochromators or energy filters, where energy filtering and energy angle filtering are two typical methods. In the energy filtering as shown in Fig. 2a, a particle beam 2 from the electron source 1 is made up of a circular lens 10 and or a Wien filter 11 itself (for example, U.S. Patent No. 6,452,169, U.S. Patent No. 6,658,073, U.S. Patent No. 6,960,763 and U.S. Patent No. 7,507,956, focus on forming an astigmatic image on the energy confining aperture 12. The electrons having the energy V 0 form the sub-electron beam 3 focused on the optical axis, and the electrons having the energy V 0 ±dV respectively form the sub-electron beams 4 and 5 which are respectively deflected in the ±X direction and focused away from the optical axis. Therefore, in the particle beam 2, all electrons whose energy changes within ±dV will pass through the aperture 12, and the remaining electrons will be blocked.

作為一明顯的優點,能量過濾將完全切斷電子能量分布的長尾巴。能量分布的長尾巴產生影像中的ㄧ背景並降低影像對比。作為一不可忽視的缺點,能量過濾需增加電子源尺寸。電子源 1在孔徑 12 的影像為後續電子光學的來源,實際上由孔徑大小決定其尺寸。然而目前在實際孔徑大小目前(3100nm)是遠大於的原始電子源的尺寸  1(蕭特基場發射源的虛擬來源為約20nm)。此外,孔徑12 上的影像是所有電子的交叉結果,此增強產生額外能量散佈的電子相互作用。雖然在電子相互作用方面而言,像散影像較無像散共焦影像為佳。As a distinct advantage, energy filtration will completely cut off the long tail of the electron energy distribution. The long tail of the energy distribution produces a sinuous background in the image and reduces image contrast. As a non-negligible shortcoming, energy filtering needs to increase the size of the electron source. The image of electron source 1 at aperture 12 is the source of subsequent electron optics, which is actually determined by the size of the aperture. However, the current actual aperture size (3100 nm) is currently much larger than the size of the original electron source 1 (the virtual source of the Schott field source is about 20 nm). In addition, the image on aperture 12 is the result of the intersection of all electrons, which enhances the electronic interaction of the extra energy spread. Although in terms of electronic interaction, astigmatic images are better than astigmatic confocal images.

如第二b圖中所示能量角度過濾中(例如美國專利第6489621號、美國專利第7679054 號及美國專利第5838004號),一來自電子源 1的粒子束2通過Wien過濾器 11。具有能量 V0的電子形成直行的次電子束3,同時能量分別為V0±dV的電子分別形成分別在±X方向偏折的次電子束 4及5。能量角度限制孔徑 12上每個電子的位置取決於其能量及進入Wien過濾器 11的入射角。因此,孔徑 12 不僅擋掉所有能量變化量不在±dV內的電子,同時即使其能量變化量在±dV內但具有較大入射角的電子也被擋掉。A particle beam 2 from the electron source 1 passes through the Wien filter 11 as in the energy angle filter shown in the second panel (e.g., U.S. Patent No. 6,488,621, U.S. Patent No. 7,790,054 and U.S. Patent No. 5,838,004). The electrons having the energy V 0 form a straight sub-electron beam 3, and the electrons having energies of V 0 ±dV respectively form sub-electron beams 4 and 5 which are respectively deflected in the ±X direction. The energy angle limits the position of each electron on the aperture 12 depending on its energy and the angle of incidence into the Wien filter 11. Therefore, the aperture 12 not only blocks all electrons whose energy variation is not within ±dV, but even if the energy variation is within ±dV, electrons having a large incident angle are blocked.

關於能量變化量d V的折射角度a必須至少大於雙入射半角b以清楚過濾出具有能量變化量dV帶電粒子。此要求Wien過濾器有足夠的分散功率或入射電子束分散程度要夠小。增加Wien過濾器的分散功率將增加折射角度,但同時加強聚焦作用,進而將減少折射角,並限制其可實現的最大折射角度。抑制入射電子束的分散程度將限制粒子束電流或增強電子的互動形同增加電子束的能量分散。另一個不容忽視的缺點是為了後續的電子光學原始電子源 1被改為較大的自14至15的虛擬電子源。Angle of refraction of energy on the variation amount d V must be greater than at least a half-width b is incident to clearly dual filter out charged particles having energy change amount dV of. This requires that the Wien filter have sufficient dispersion power or that the incident electron beam is dispersed to a small extent. Increasing the dispersion power of the Wien filter will increase the angle of refraction, but at the same time enhance the focus, which in turn will reduce the angle of refraction and limit the maximum angle of refraction that it can achieve. Inhibiting the degree of dispersion of the incident electron beam will limit the particle beam current or enhance the interaction of electrons to increase the energy dispersion of the electron beam. Another disadvantage that cannot be ignored is that the subsequent electron-optical source 1 is changed to a larger virtual source from 14 to 15.

很多種改進方法已被提出以解決上述問題。在能量角度過濾方面,一種方法是使用圓形透鏡以將原始電子源成像到Wien過濾器中心(如美國專利第7468517號)上。這將在電子源尺寸上的Wien過濾器效應減至最少,但增加了一真實交叉。另一種方法是使用第二Wien過濾器來補償(例如美國專利第6489621號、美國專利第7679054號)第一個Wien過濾器的殘餘效應。雖然這種方法不會產生一真實交叉,但將產生一遠離後續電子光學的虛擬交叉,此將因為大為增加的粒子束尺寸造成大的像差。A number of improved methods have been proposed to solve the above problems. In terms of energy angle filtering, one approach is to use a circular lens to image the original electron source onto the Wien filter center (e.g., U.S. Patent No. 7,485,517). This minimizes the Wien filter effect on the electron source size, but adds a true cross. Another method is to use a second Wien filter to compensate for the residual effects of the first Wien filter (e.g., U.S. Patent No. 6,486,621, U.S. Patent No. 7,790,054). While this approach does not produce a true intersection, it will create a virtual intersection away from subsequent electron optics, which will cause large aberrations due to the greatly increased particle beam size.

在能量過濾方面,許多文件(例如美國專利第6960763號、美國專利第6580073號及美國專利第7507956號)提供使用一或更額外Wien過濾器 21 以補償能量限制孔徑過濾器 12後第一個Wien過濾器11之殘餘效應的方法(如第三a圖及第三b圖中所示)。在這些解決方案中,ㄧ共焦及無分散交叉7,即在能量限制孔徑 12的第一真實像散交叉 6後的ㄧ額外真實交叉是在最後一個Wien過濾器 21 後形成。這不但增加了電子相互作用方面能量過濾後的能量散佈,但也使掃描式電子顯微鏡的總長度至少增加了單色器的長度 8。In terms of energy filtration, a number of documents (e.g., U.S. Patent No. 6,696,763, U.S. Patent No. 6,586,073, and U.S. Patent No. 7,075,596) provide the use of one or more Wien filters 21 to compensate for the energy-limited aperture filter 12 after the first Wien The method of residual effect of the filter 11 (as shown in the third a and third b). In these solutions, the ㄧ confocal and non-dispersive intersection 7, i.e., the 真实 extra true intersection after the first true astigmatism intersection 6 of the energy limiting aperture 12 is formed after the last Wien filter 21. This not only increases the energy dispersion after energy filtering in the electronic interaction, but also increases the total length of the scanning electron microscope by at least the length of the monochromator 8 .

本發明將提供一個解決能量過濾及能量角度過濾問題的解決方案。不同於形成入射帶電粒子束經單色器後的真實共焦交叉,其形成了單色器內虛擬的共焦及無分散交叉。其後本發明提供基於低電壓掃描式電子顯微鏡原理改良低電壓掃描式電子顯微鏡及相關設備成像解析度的有效方法。The present invention will provide a solution to the problem of energy filtration and energy angle filtering. Rather than forming a true confocal intersection of the incident charged particle beam through the monochromator, it forms a virtual confocal and non-dispersive intersection within the monochromator. The present invention then provides an efficient method for improving the resolution of low voltage scanning electron microscopes and related equipment based on the principle of low voltage scanning electron microscopy.

本發明的目的是提供一種帶電粒子裝置中的單色器以減少主帶電粒子束的能量散佈。藉由特別沿相對於一能量限制孔徑的直光軸形成在折射色散及基本軌跡的雙對稱,此單色器使一來自帶電粒子源入射帶電粒子束離開時具有減少的能量散佈以及保持有效交叉直徑及行進方向不變。因此,本發明提供了基於低電壓掃描式電子顯微鏡的原理提高低電壓掃描式電子顯微鏡及相關裝置的成像解析度的有效途徑,如半導體良率管理的缺陷檢測與缺陷再檢視。It is an object of the present invention to provide a monochromator in a charged particle device to reduce the energy spread of the main charged particle beam. By forming a double symmetry in the refracting chromaticity and the fundamental trajectory particularly along a direct optical axis with respect to an energy-restricted aperture, the monochromator has a reduced energy spread and an effective crossover when a charged particle source exits the charged particle beam away from it. The diameter and direction of travel are unchanged. Therefore, the present invention provides an effective way to improve the imaging resolution of a low voltage scanning electron microscope and related devices based on the principle of a low voltage scanning electron microscope, such as defect detection and defect re-viewing of semiconductor yield management.

因此,本發明提供一種單色器之一實施例,該單色器包含沿該單色器之一直光軸對齊以將具有一正常能量與一能量散佈的帶電粒子束折射的一第一分散單元與一第二分散單元,以將沿該光軸通過之該帶電粒子束之帶電粒子依序折射,一位於該第一分散單元與該第二分散單元之間之粒子阻斷單元,一與該直光軸對齊並將該帶電粒子束聚焦以於該粒子阻斷單元內之一平面上形成一真實交叉之粒子束調整元件。該帶電粒子束沿光軸通過並包含具有正常的能量直線通過該每一分散單元的帶電粒子以及具有自正常能量改變的能量變化並由該每一分散單元沿一相同分散方向折射的帶電粒子。由該每一分散單元產生的每一帶電粒子之折射角係由該每一分散單元的一分散功率及該每一帶電粒子的能量變化決定,其中該第一分散單元與該第二分散單元的該分散方向為分別相等。於該真實交叉內,每一具有能量變化粒子具有一因該第一分散單元產生之該折射角所造成之位置偏移。該粒子阻斷單元阻斷位於該真實交叉之一空間區域外之粒子。一虛擬交叉於該帶電粒子束被該第二分散單元分散之後形成於該單色器內。Accordingly, the present invention provides an embodiment of a monochromator comprising a first dispersion unit aligned along a constant optical axis of the monochromator to refract a charged particle beam having a normal energy and an energy dispersion. And a second dispersing unit for sequentially refracting charged particles of the charged particle beam passing along the optical axis, a particle blocking unit between the first dispersing unit and the second dispersing unit, and The direct optical axis is aligned and the charged particle beam is focused to form a true intersecting particle beam modulating element on a plane in the particle blocking unit. The charged particle beam passes along the optical axis and comprises charged particles having normal energy passing straight through the each dispersing unit and charged particles having energy changes from normal energy changes and being refracted by the respective dispersing unit in an identical direction of dispersion. The angle of refraction of each charged particle generated by each of the dispersing units is determined by a dispersion power of each of the dispersing units and a change in energy of the each charged particle, wherein the first dispersing unit and the second dispersing unit The direction of dispersion is equal. Within the true intersection, each of the energy-changing particles has a positional offset caused by the angle of refraction generated by the first dispersion unit. The particle blocking unit blocks particles located outside of a region of the real intersection. A dummy intersection is formed in the monochromator after the charged particle beam is dispersed by the second dispersion unit.

該二分散單元之該分散功率具有一比例關係以使該帶電粒子束之該虛擬交叉無第一級分散且位於或接近該平面。該第一分散單元包含一第一Wien過濾器與一第一散光像差補償器,該第一散光像差補償器補償該第一Wien過濾器產生之像散,該第二分散單元包含一第二Wien過濾器與一第二散光像差補償器,該第二散光像差補償器補償該第二Wien過濾器產生之像散。該粒子束調整元件位於該第一分散單元之一粒子束進入側,且可為一圓透鏡。自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由同時以該比例關係改變該第一與第二分散單元之該分散功率及改變該粒子束調整元件之一聚焦功率來改變。The distributed power of the two dispersion units has a proportional relationship such that the virtual intersection of the charged particle beam is not dispersed in the first stage and is located at or near the plane. The first dispersion unit includes a first Wien filter and a first astigmatic aberration compensator, the first astigmatic aberration compensator compensates for astigmatism generated by the first Wien filter, and the second dispersion unit includes a first dispersion unit The second Wien filter and a second astigmatic aberration compensator compensate the astigmatism generated by the second Wien filter. The particle beam adjusting element is located on a particle beam entering side of one of the first dispersing units, and may be a circular lens. The energy dispersion of one of the charged particle beams after leaving the monochromator can be changed by simultaneously changing the dispersion power of the first and second dispersion units in the proportional relationship and changing the focus power of one of the particle beam adjustment elements. .

該粒子阻斷單元可利用一能量限制孔徑阻斷粒子。此外,該粒子阻斷單元於該第一分散單元的該分散方向上可具有多個具有不同尺寸的能量限制孔徑自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由使用一不同能量限制孔徑來改變。該粒子阻斷單元可使用一第一刀刃邊緣以阻斷粒子,且自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由調整位於該第一分散單元的該分散方向上該第一刀刃邊緣之一位置來改變。該粒子阻斷單元可進一步使用一第二刀刃邊緣以阻斷粒子,且自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由調整位於該第一分散單元的該分散方向上該二刀刃邊緣之一或二者之位置來改變。該粒子束調整元件位於該第一分散單元與該粒子阻斷單元之間。The particle blocking unit can block the particles with an energy limiting aperture. In addition, the particle blocking unit may have a plurality of energy-limiting pores having different sizes in the dispersion direction of the first dispersion unit. After leaving the monochromator, one of the charged particle beams leaves the energy dispersion by using one. Different energy limits the aperture to change. The particle blocking unit may use a first edge of the blade to block particles, and one of the charged particle beams leaving the energy dispersion after leaving the monochromator may be adjusted by the adjustment in the direction of dispersion of the first dispersion unit The position of one of the edges of the first blade changes. The particle blocking unit may further use a second edge of the blade to block the particles, and one of the charged particle beams leaving the energy dispersion after leaving the monochromator may be adjusted by the adjustment in the direction of dispersion of the first dispersion unit The position of one or both of the edges of the two edges is changed. The particle beam adjusting element is located between the first dispersing unit and the particle blocking unit.

本發明提供一種帶電粒子束裝置,其包含一提供一沿該裝置之一直光軸移動之主電子束的帶電粒子源,一與該光學軸對齊以聚焦該主電子束之聚光鏡,一與該光學軸對齊以將該主電子束聚焦在一試片之一發射二次電子的表面上的物鏡,一接收該二次電子的偵測器,以及一與該光軸對齊並位於該帶電粒子源與該物鏡之間以減少該主電子束之一能量散佈之單色器。該單色器可參考之前的實施例。The present invention provides a charged particle beam apparatus comprising a charged particle source providing a main electron beam moving along a constant optical axis of the apparatus, a concentrating mirror aligned with the optical axis to focus the main electron beam, and the optical Shaft alignment to focus the main electron beam on an objective lens on a surface of a test piece that emits secondary electrons, a detector that receives the secondary electrons, and a source aligned with the optical axis and located in the charged particle source A monochromator between the objective lenses to reduce the energy dispersion of one of the main electron beams. The monochromator can refer to the previous embodiment.

該二分散單元之該分散功率具有一比例關係以使該虛擬交叉無第一級分散且位於或接近該平面。該單色器之粒子束調整元件可位於該單色器之第一分散單元之一粒子束進入側。該單色器之粒子束調整元件可為一圓透鏡。該第一分散單元包含一第一Wien過濾器與一第一散光像差補償器,該第一散光像差補償器補償該第一Wien過濾器產生之像散,該第二分散單元包含一第二Wien過濾器與一第二散光像差補償器,該第二散光像差補償器補償該第二Wien過濾器產生之像散。自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由同時以該比例關係改變該第一與第二分散單元之該分散功率及改變該粒子束調整元件之一聚焦功率來改變,或可藉由調整粒子阻斷單元以選擇真實交叉的空間區域的對應位置與尺寸來改變。The distributed power of the two dispersion units has a proportional relationship such that the virtual intersection has no first stage dispersion and is located at or near the plane. The particle beam adjusting element of the monochromator may be located on the particle beam entering side of one of the first dispersing units of the monochromator. The particle beam adjusting element of the monochromator can be a circular lens. The first dispersion unit includes a first Wien filter and a first astigmatic aberration compensator, the first astigmatic aberration compensator compensates for astigmatism generated by the first Wien filter, and the second dispersion unit includes a first dispersion unit The second Wien filter and a second astigmatic aberration compensator compensate the astigmatism generated by the second Wien filter. The energy dispersion of one of the charged particle beams after leaving the monochromator can be changed by simultaneously changing the dispersion power of the first and second dispersion units in the proportional relationship and changing the focus power of one of the particle beam adjustment elements. Or can be changed by adjusting the particle blocking unit to select the corresponding position and size of the real intersecting spatial region.

帶電粒子束裝置可進一步包含一具有一位於該帶電粒子源與該聚光鏡之間的一第一粒子束限制孔徑的第一板,以及一具有一位於該聚光鏡與該物鏡之間的一第二粒子束限制孔徑的第二板,其中該第一與該第二粒子束限制孔徑與該裝置之該光軸對齊。The charged particle beam device may further include a first plate having a first particle beam limiting aperture between the charged particle source and the concentrating mirror, and a second particle between the condensing mirror and the objective lens A second plate that limits the aperture, wherein the first and second particle beam limiting apertures are aligned with the optical axis of the device.

本發明又提供一單色器,其包含沿該單色器之一直光軸對齊以將具有一正常能量與一能量散佈的帶電粒子束折射的一第一分散單元與一第二分散單元,以將沿該光軸通過之該帶電粒子束之帶電粒子依序折射,以及一位於該第一分散單元與該第二分散單元之間的粒子阻斷單元。每一該分散單元於一分散方向具有一分散功率,因此由該每一分散單元產生的每一帶電粒子之折射角係由該每一分散單元的該分散功率及該每一帶電粒子的能量變化及該帶電粒子束之一正常的能量決定。該第一分散單元與該第二分散單元的該分散方向為分別相等。該帶電粒子束於該粒子阻斷單元內之一平面上形成一真實交叉,且於該真實交叉內,每一具有能量變化粒子具有一因該第一分散單元產生之該折射角所造成之位置偏移。該粒子阻斷單元阻斷位於該真實交叉之一空間區域外之粒子,且該第二分散單元之該分散功率使該帶電粒子束形成一無第一級分散且位於或接近該平面的虛擬交叉。The present invention further provides a monochromator comprising a first dispersion unit and a second dispersion unit aligned along a constant optical axis of the monochromator to refract a charged particle beam having a normal energy and an energy dispersion. The charged particles of the charged particle beam passing along the optical axis are sequentially refracted, and a particle blocking unit between the first dispersion unit and the second dispersion unit. Each of the dispersing units has a dispersing power in a dispersing direction, and thus the angle of refraction of each charged particle generated by each dispersing unit is varied by the dispersing power of each dispersing unit and the energy of each charged particle. And the normal energy of one of the charged particle beams is determined. The dispersion direction of the first dispersion unit and the second dispersion unit are respectively equal. The charged particle beam forms a true intersection on a plane in the particle blocking unit, and within the real intersection, each of the energy-changing particles has a position caused by the refraction angle generated by the first dispersing unit Offset. The particle blocking unit blocks particles located outside a region of the real intersection, and the dispersion power of the second dispersion unit causes the charged particle beam to form a virtual cross without a first level dispersion and at or near the plane .

該粒子阻斷單元可利用一能量限制孔徑,或一或二刀刃邊緣阻斷粒子。The particle blocking unit can utilize an energy limiting aperture, or one or two edge edges to block the particles.

本發明又提供一種能量過濾一帶電粒子束的方法,包含提供一粒子阻斷裝置以阻斷位於該帶電粒子束之一空間區域外之粒子,提供一可產生沿一分散方向的一分散功率之分散裝置,因此可以一折射角折射該帶電粒子束之之每一帶電粒子,該折射角由該分散功率及該每一帶電粒子的能量變化及該帶電粒子束之一正常的能量決定,使用該分散裝置形成一雙重比例對稱,該雙重比例對稱包含均相對於一平面的一於分散功率分佈上的比例對稱與一具有一正常能量的帶電粒子在一軌跡分佈的一比例反對稱。該雙重比例對稱首先使該帶電粒子束於該平面形成一真實交叉並具有一取決於該帶電粒子束之能量分布的粒子位置分佈,且該粒子阻斷裝置使該位於該真實交叉之空間區域外之粒子被阻斷。該雙重比例對稱接著使該帶電粒子束形成一無第一級分散且具有一減少能量分散的虛擬交叉。The invention further provides a method of energy filtering a charged particle beam, comprising providing a particle blocking device to block particles located outside a spatial region of the charged particle beam, providing a distributed power that can be generated along a direction of dispersion. a dispersing device, so that each of the charged particles of the charged particle beam can be refracted by a refractive angle determined by the dispersion power and the energy change of the charged particle and the normal energy of the charged particle beam. The dispersing device forms a dual proportional symmetry comprising a proportional symmetry of a distributed power distribution relative to a plane and a proportional symmetry of a charged particle having a normal energy in a trajectory distribution. The dual proportional symmetry first causes the charged particle beam to form a true intersection in the plane and has a particle position distribution depending on the energy distribution of the charged particle beam, and the particle blocking device makes the space region outside the real intersection The particles are blocked. The dual proportional symmetry then causes the charged particle beam to form a virtual cross without first level dispersion and with a reduced energy dispersion.

該虛擬交叉可位於或接近該平面。The virtual intersection can be at or near the plane.

本發明又提供一種減少一帶電粒子束之一能量散佈的方法,包含分散該帶電粒子束,其中每一粒子獲得一由該粒子之能量變化及該帶電粒子束之一正常的能量決定之折射角。接著對分散之該帶電粒子束聚焦以形成真實交叉。然後阻斷位於該真實交叉之一空間區域外之粒子。最後分散未被阻斷之該帶電粒子束以形成一無第一級分散的虛擬交叉。The invention further provides a method of reducing energy dispersion of a charged particle beam, comprising dispersing the charged particle beam, wherein each particle obtains a refraction angle determined by an energy change of the particle and a normal energy of the charged particle beam . The dispersed charged particle beam is then focused to form a true intersection. The particles located outside of one of the real intersections are then blocked. Finally, the charged particle beam that is not blocked is dispersed to form a virtual cross without first-order dispersion.

該虛擬交叉位於或接近該真實交叉。The virtual intersection is at or near the true intersection.

本發明的各種實施例現在將伴隨圖示更充分敘述,圖示中顯示一些實施例。在不限制本發明的保護範圍下,實施例中所有的說明與圖示將以電子源與掃描式電子顯微鏡為例。不過實施例並非用來將本發明實施例限制在特定的帶電粒子源與特定的電子顯微鏡領域。Various embodiments of the present invention will now be described more fully with the accompanying drawings. Without limiting the scope of the invention, all descriptions and illustrations in the examples will be exemplified by an electron source and a scanning electron microscope. However, the examples are not intended to limit embodiments of the invention to specific charged particle sources and to specific electron microscopy fields.

以下的說明將集中在使用為一種帶電粒子的電子束。在圖示中,每個元件及每個元件之間的相對尺寸為清晰起見可能被放大。在下列圖示的說明中,相同的參考編號對應相同的元件或實體,並只對個別的實施例間的差異進行說明。The following description will focus on an electron beam that is used as a charged particle. In the figures, the relative dimensions between each element and each element may be exaggerated for clarity. In the following description of the drawings, the same reference numerals are used to refer to the same elements or entities, and only the differences between the individual embodiments are described.

本發明提供一具有雙對稱的Wien過濾器型單色器。如第四a圖 及第 四b 圖中所示,由兩個完全相同的分散單元(20及40) 對稱地位於能量限制孔徑30的每ㄧ側以實現雙對稱。兩個完全相同的每ㄧ分散單元於具有自一正常的能量改變的能量變化帶電粒子產生折射散佈並將離軸帶電粒子聚焦。在一方面,這兩個完全相同的分散單元對同一方向具有自一正常的能量改變的能量變化的帶電粒子產生兩個相等的折射角(a1= a2)。在此情況下,折射散佈相對能量限制孔徑 (30)展現對稱性,如第四a 圖中所示。另一方面,這兩個完全相同的色散單位同樣將離軸帶電粒子聚焦,且第一分散單元 (20) 使具有正常能量的帶電粒子通過能量限制孔徑 (30) 的中心。在這種情況下具有正常能量的每個離軸粒子的軌跡顯示相對於能量限制孔徑 (30)的反對稱性,如第四b 圖中所示。雙對稱實現能量過濾,並同時確保離開的帶電粒子束具有一在單色器內且無第一級分散及像散的虛擬交叉。The present invention provides a Wien filter type monochromator having a double symmetry. As shown in the fourth and fourth figures, two identical dispersing units (20 and 40) are symmetrically located on each side of the energy limiting aperture 30 to achieve bisymmetry. Two identical per-dispersion units produce a refractive dispersion of the charged particles with energy changes from a normal energy and focus off-axis charged particles. In one aspect, the two identical dispersing units produce two equal refraction angles (a1 = a2) for charged particles having energy changes from a normal energy change in the same direction. In this case, the refractive dispersion exhibits symmetry with respect to the energy limiting aperture (30) as shown in the fourth a diagram. On the other hand, the two identical dispersion units also focus the off-axis charged particles, and the first dispersion unit (20) passes the charged particles having normal energy through the center of the energy confinement aperture (30). The trajectory of each off-axis particle having normal energy in this case shows the antisymmetry with respect to the energy limiting aperture (30) as shown in the fourth b-picture. Double symmetry achieves energy filtering while ensuring that the exiting charged particle beam has a virtual intersection within the monochromator without first level dispersion and astigmatism.

每個分散單元包含一Wien過濾器及一散光像差補償器,且兩者的靜電場與磁場都沿光軸疊加。對於具有正常能量與一定的能量散佈的帶電粒子束而言,Wien過濾器產生所需的隨雙極磁場與靜電場強度改變的分散功率,以及隨分散功率改變的像散聚焦功率,如方程式(1.3)-(1.8)所示。散光像差補償器是受控制以產生一像散功率以補償Wien過濾器的像散聚焦功率。由於在像散產生處已完成補償因此來自每一分散單元的粒子束可達成無像散現象。因此每一分散單元具有ㄧ可獨立改變的分散功率以及一依附改變的共焦聚焦功率。Each of the dispersing units includes a Wien filter and an astigmatic aberration compensator, and both the electrostatic field and the magnetic field are superposed on the optical axis. For a charged particle beam with normal energy and a certain energy spread, the Wien filter produces the required dispersion power as a function of the bipolar magnetic field and electrostatic field strength, and the astigmatic focus power as a function of the dispersion power, such as the equation ( 1.3)-(1.8). The astigmatic aberration compensator is controlled to produce an astigmatic power to compensate for the astigmatic focus power of the Wien filter. Since the compensation has been completed at the astigmatism generation, the particle beam from each of the dispersing units can achieve astigmatism. Therefore, each of the dispersing units has a dispersion power that can be independently changed and a confocal focusing power that is dependent on the change.

根據像散的補償,因為在色散方向散光像差補償器產生的負聚焦功率,Wien過濾器在分散方向的聚焦效應使分散功率減少被減弱。帶電粒子光束通過能量限制孔徑的能量散佈係由第一分散單元 (20)的分散功率及能量限制孔徑(30)的尺寸 (在分散方向)決定,因此離開帶電粒子束的能量散佈可藉由改變分散功率及/或改變在分散單元中能量限制孔徑尺寸。前者可以透過調整施加在Wien過濾器的電激發實現,因此可以連續。不過,分散功率的改變將會導致的共焦聚焦功率的改變,將打破基本軌跡的反對稱性,因此破壞由兩個分散單位(20 及 40)產生的像差的抵銷。According to the compensation of astigmatism, the focus effect of the Wien filter in the dispersion direction causes the dispersion power reduction to be attenuated because of the negative focus power generated by the astigmatic aberration compensator in the dispersion direction. The energy dispersion of the charged particle beam through the energy confinement aperture is determined by the dispersion power of the first dispersion unit (20) and the size of the energy confinement aperture (30) (in the direction of dispersion), so that the energy dispersion away from the charged particle beam can be changed by Disperse power and/or change the energy-restricted aperture size in the dispersion unit. The former can be achieved by adjusting the electrical excitation applied to the Wien filter, so it can be continuous. However, a change in the power of focus will result in a change in the power of the confocal focus, which will break the antisymmetry of the basic trajectory, thus destroying the offset of the aberrations produced by the two discrete units (20 and 40).

當分散功率改變或入射帶電粒子束改變時,為了要保持雙對稱,一粒子束調整元件係在兩個分散單元前設定。粒子束調整元件為磁性或靜電的圓形透鏡,其對焦功率為可變。粒子束調整元件作為一個可變的粒子束調適器。當入射帶電粒子束交叉及或正常能量可因一些好的原因改變及或第一分散單元的分散功率可被改變以獲得對於一特定尺寸的能量限制孔徑而言一所需的能量分散的減少,其聚焦的功率被調整為保持帶電粒子束在能量限制孔徑中心 (第四b圖 的 S71)處具有一真實交叉。When the dispersion power changes or the incident charged particle beam changes, in order to maintain bisymmetry, a particle beam adjustment element is set before the two dispersion units. The particle beam adjusting element is a magnetic or electrostatic circular lens whose focus power is variable. The particle beam adjustment element acts as a variable particle beam adaptor. When the incident charged particle beam crossover and or normal energy may change for some good reason and or the dispersion power of the first dispersion unit may be varied to obtain a desired reduction in energy dispersion for a particular size of the energy limiting aperture, The power of its focus is adjusted to maintain the charged particle beam with a true intersection at the center of the energy confinement aperture (S71 of the fourth b-graph).

因此,從入口側至出口側,本發明的單色器 500包含一粒子束調整元件 (100)、第一分散單元 (200)、一能量限制孔徑 (300) 及一第二分散單元 (400),如第五圖所示。兩個分散單元具有相同的結構及方位,在相同激發中使用,以及對稱性地位於能量限制孔徑 (300) 的每一側。所有元件被設定並將其激發以確保在折射散佈及相對於能量限制孔徑的基本軌跡的雙對稱性。Therefore, from the inlet side to the outlet side, the monochromator 500 of the present invention comprises a particle beam adjusting element (100), a first dispersing unit (200), an energy limiting aperture (300) and a second dispersing unit (400). As shown in the fifth picture. The two dispersing units have the same structure and orientation, are used in the same excitation, and are symmetrically located on each side of the energy limiting aperture (300). All components are set and excited to ensure double symmetry in the refractive dispersion and the fundamental trajectory relative to the energy confined aperture.

本發明的單色器具有一直光軸且具有正常能量的帶電粒子因此不會被轉向遠離光軸。此一特性不僅使單色器易於生產並調整,同時不會產生實際上無法完全補償的離軸像差。此外,一帶電粒子束之虛擬共焦及無分散交叉形成於第一分散單元與能量限制孔徑之間,而不是帶電粒子束的一真實共焦交叉形成在單色器出口側。此虛擬交叉會是一需要單色器的裝置之後續光學的來源。在一方面,虛擬交叉的伯爾施效應(Boersch effect)也比真實交叉的伯爾施效應小。另一方面,虛擬交叉的位置更接近原始的帶電粒子源,並因此當單色器整合進入現有設計的電子顯微鏡如低電壓掃描式電子顯微鏡時所需的修改將比真實交叉少。根據所有上述的觀點,本發明的單色器提供一種基於低電壓掃描式電子顯微鏡原理改良低電壓掃描式電子顯微鏡及相關裝置成像解析度的有效方法。The monochromator of the present invention has charged particles that have a constant optical axis and have normal energy and thus are not deflected away from the optical axis. This feature not only makes the monochromator easy to produce and adjust, but does not produce off-axis aberrations that are not actually fully compensated. In addition, a virtual confocal and non-dispersive intersection of a charged particle beam is formed between the first dispersion unit and the energy confinement aperture, rather than a true confocal intersection of the charged particle beam formed on the exit side of the monochromator. This virtual crossover is a source of subsequent optics for a device that requires a monochromator. On the one hand, the Boersch effect of the virtual cross is also smaller than the real intersecting Burrsch effect. On the other hand, the position of the virtual intersection is closer to the original source of charged particles, and thus the modifications required when the monochromator is integrated into an existing design electron microscope such as a low voltage scanning electron microscope will be less than the true cross. In accordance with all of the above, the monochromator of the present invention provides an efficient method for improving the resolution of low voltage scanning electron microscopes and related devices based on the principle of low voltage scanning electron microscopy.

本發明還提供了在掃描式電子顯微鏡中使用本發明的單色器的兩個實例。在第一個實例中如第七a圖所示,單色器被置於電子源 600及一聚光鏡 620之間,且一電流限制孔徑 610被用來控制通過單色器的粒子束電流以降低單色器內部發生的電子相互作用。在第二個實例中如第八圖所示,單色器被置於一聚光鏡及一物鏡之間,而粒子束限制孔徑 630 控制單色器的入射粒子束電流。The invention also provides two examples of the use of the monochromator of the invention in a scanning electron microscope. In the first example, as shown in Figure 7a, a monochromator is placed between the electron source 600 and a concentrating mirror 620, and a current limiting aperture 610 is used to control the beam current through the monochromator to reduce The electronic interaction that takes place inside the monochromator. In the second example, as shown in the eighth diagram, the monochromator is placed between a concentrating mirror and an objective lens, and the particle beam limiting aperture 630 controls the incident beam current of the monochromator.

之後本發明還提供了一具有雙比例對稱的Wien過濾器型單色器。與第四a圖 及第 4b 圖中所示的雙對稱不同,雙比例對稱提供折射散佈與沿一相對於能量限制孔徑之直光軸的基本軌跡之間的一比例關係。因此二折射單元可為不相等但其折射功率具有一比例關係,且能量限制孔徑因此應位於由比例關係決定的平面,其中此平面可能不是位於二折射單元之中間平面。雙比例對稱提供單色器在製造與應用上更多的彈性。第九a圖 及第 九b 圖中顯示此雙比例對稱。第十圖 及第 十一 圖中顯示二具有雙比例對稱單色器的實施例。The invention then also provides a Wien filter type monochromator with dual proportional symmetry. Unlike the double symmetry shown in Figures 4a and 4b, the dual proportional symmetry provides a proportional relationship between the refractive dispersion and the fundamental trajectory along a direct optical axis relative to the energy limiting aperture. Thus the two refractive units may be unequal but their refractive power has a proportional relationship, and the energy limiting aperture should therefore lie in a plane determined by the proportional relationship, where the plane may not be in the midplane of the birefringent unit. Dual-proportional symmetry provides more flexibility in the manufacture and application of monochromators. This double proportional symmetry is shown in the ninth a and ninth b. An embodiment with two dual-proportional symmetrical monochromators is shown in the tenth and eleventh figures.

其後,對於前述具有雙對稱或雙比例對稱的單色器而言,本發明更提供一種使用刀刃型粒子封阻器的方法以截斷具有較大能量變化的粒子。與之前通常需要在折射方向具有微小尺寸以獲得小能量散佈的能量限制孔徑相比,刀刃型粒子封阻器在製造上更為簡單且在獲得小能量散佈方面更為可行。第十二a圖 至第十二c 圖中顯示刀刃型粒子封阻器的三個實施例。Thereafter, for the aforementioned monochromator having double symmetry or double proportional symmetry, the present invention further provides a method of using a blade type particle damper to cut off particles having a large energy change. Blade-type particle dampers are simpler to manufacture and more feasible in achieving small energy spreads than energy-constrained apertures that previously required a small size in the direction of refraction to achieve small energy dispersion. Three embodiments of the blade type particle blocker are shown in Figures 12a through 12c.

下一步將描述本發明的詳細敘述及機構。The detailed description and mechanism of the present invention will be described next.

本發明提供一Wien過濾器型的單色器以降低掃描式電子顯微鏡或帶電粒子裝置中主電子束的能量散佈。單色器形成相對於入射粒子束在折射散佈及沿直光軸之基本軌跡的雙對稱。雙對稱可確保來自帶電粒子源的入射帶電粒子束自單色器離開時之能量散佈減少,以及保持有效交叉直徑及傳播方向不變。The present invention provides a Wien filter type monochromator to reduce the energy spread of the main electron beam in a scanning electron microscope or charged particle device. The monochromator forms a double symmetry with respect to the incident particle beam in the refracted dispersion and the fundamental trajectory along the straight optical axis. The double symmetry ensures that the incident charged particle beam from the charged particle source is reduced in energy dispersion as it exits the monochromator, and that the effective cross-diameter and propagation direction are maintained.

本發明還提供一種將單色器整合進入掃描式電子顯微鏡的方法。本發明的單色器有助於藉由減少主粒子束或成像粒子束的能量散佈以降低試片色散像差,同時不會導致粒子源尺寸的明顯增加。因此,試片上的探針點尺寸將藉由重新平衡因像差、繞射及粒子源尺寸造成的影像模糊而達成一較低值。因此,單色器提供一種根據低電壓掃描式電子顯微鏡的原理提高掃描式電子顯微鏡特別是低電壓掃描式電子顯微鏡及相關裝置的成像解析度的有效方法,例如半導體良率管理中的缺陷檢測與缺陷檢視。The present invention also provides a method of integrating a monochromator into a scanning electron microscope. The monochromator of the present invention helps to reduce the dispersion aberration of the test piece by reducing the energy dispersion of the main particle beam or the imaging particle beam without causing a significant increase in the size of the particle source. Therefore, the probe spot size on the test piece will achieve a lower value by rebalancing the image blur due to aberrations, diffraction, and particle source size. Therefore, the monochromator provides an effective method for improving the imaging resolution of a scanning electron microscope, particularly a low voltage scanning electron microscope and related devices according to the principle of a low voltage scanning electron microscope, such as defect detection in semiconductor yield management and Defect inspection.

作為本發明中提供的單色器之基礎的雙對稱包含分別關於能量限制孔徑之折射散佈中的一對稱及一基本軌跡中的反對稱。在顯示折射散佈中之對稱的第四a圖中,一具有正常能量V0及一能量散佈的軸上電子束 50連續地沿 Z 軸進入兩個分散單元 20 與 40。兩分散單元 20 與 40結構相同且位於並對稱地朝向與光學 Z 軸垂直的平面 31。每一分散單元的位置係由場區域中心定義。每個分散單元包含一Wien過濾器及一散光像差補償器,且兩者的磁場與電場彼此相互疊加。相同激發施加在每個Wien過濾器,以產生不會使具有正常能量 V0(例如61)的電子偏折但會使具有自正常能量 V0(例如71)改變之能量變化dV的電子偏折所需的折射功率。如方程式(1.6)所示,能量變化dV越大折射角度(例如a1與a2)就越大。隨能量變化改變的折射角度的特徵稱為折射散佈,且折射角度比 K及能量變化dV稱為分散功率。分散功率隨正常能量 V0及可被施加在Wien過濾器上的電激發調整的磁偶極場改變。The double symmetry which is the basis of the monochromator provided in the present invention includes a symmetry in the refractive dispersion of the energy-restricted aperture and an antisymmetry in a basic trajectory, respectively. In the fourth a diagram showing the symmetry in the refractive dispersion, an on-axis electron beam 50 having a normal energy V 0 and an energy dispersion continuously enters the two dispersion units 20 and 40 along the Z axis. The two dispersing units 20 and 40 are identical in structure and are located symmetrically toward a plane 31 perpendicular to the optical Z-axis. The location of each discrete unit is defined by the center of the field area. Each of the dispersing units includes a Wien filter and an astigmatic aberration compensator, and the magnetic field and the electric field of the two are superposed on each other. The same is applied in each excitation Wien filter, not to generate energy electron deflection with normal V 0 (e.g. 61), but will have the energy from a normal V 0 (e.g. 71) to change the deflection of an electron energy change dV The required refractive power. As shown in equation (1.6), the larger the energy change dV, the larger the refraction angle (for example, a1 and a2). The characteristic of the angle of refraction that changes with the change in energy is called the refractive dispersion, and the refractive angle ratio K and the energy change dV are called the distributed power. Dispersing power with the normal power V 0 and the magnetic dipole field change can be applied to the electrically Wien filter excitation adjustment.

一平板位於平面 31上,其中一位於平板上的孔徑30與光軸Z對準。在第四a圖中, 具有能量變化d V的電子71的折射相對於平面 31對稱地離開。分別由Wien過濾器產生在第一分散單元 20及第二分散單元 40中的二折射角度a1與a2 彼此相等,即a1=a2,且均與能量變化d V成正比。自第二分散單元 40離開的電子71的軌跡虛擬地交叉光軸於自第二分散單元 40的中心向後一距離L2的位置,其中 A flat plate is located on the plane 31, and an aperture 30 on the flat plate is aligned with the optical axis Z. In the fourth a diagram, the refraction of the electrons 71 having the energy change d V is symmetrically separated from the plane 31. The two refraction angles a1 and a2 generated by the Wien filter in the first dispersing unit 20 and the second dispersing unit 40, respectively, are equal to each other, i.e., a1 = a2, and are each proportional to the energy change d V . The trajectory of the electrons 71 exiting from the second dispersion unit 40 virtually intersects the optical axis at a position a distance L2 from the center of the second dispersion unit 40, wherein

若所有高於第一級的項可被省略距離 L2 不會隨折射角a1改變。因此出射粒子束的第一級分散消失,且入射軸上粒子束成為一看來自二分散單元之幾何中心點S71發散的出射粒子束。If all items higher than the first level can be omitted, the distance L2 does not change with the refraction angle a1. Therefore, the first-order dispersion of the exiting particle beam disappears, and the particle beam on the incident axis becomes an outgoing particle beam which is diverged from the geometric center point S71 of the two-dispersion unit.

基本軌跡中的反對稱性係基於折射散佈對稱性。基於第四a 圖中所示的內容,第四圖 4b 顯示基本軌跡中的反對稱性。在第四b圖 中的每個分散單元 (20 及 40),散光像差補償器被激發以補償當Wien過濾器作動以達成第四a 圖中所示的折射散佈對稱時出現且隨Wien過濾器分散功率增加而增加的像散。因此每一分散單元 (20 及 40)在X 與 Y 方向有相等的隨每一分散單元之分散功率增加而增加的聚焦功率f。The antisymmetric in the basic trajectory is based on the refracting symmetry. Based on the content shown in the fourth a diagram, the fourth figure 4b shows the antisymmetry in the basic trajectory. At each of the dispersing units (20 and 40) in the fourth b-picture, the astigmatic aberration compensator is excited to compensate for the occurrence of the fused dispersion symmetry as shown in the fourth a diagram when the Wien filter is actuated and filtered with Wien The astigmatism increases as the dispersion power increases. Therefore, each of the dispersing units (20 and 40) has an equal increase in the focusing power f in the X and Y directions as the dispersion power of each dispersing unit increases.

在第四b圖中,基本軌跡中的反對稱性可藉由若一具有正常能量 V0的入射電子束 62具有一原來在光軸上特定位置上的交叉62a達成。交叉62a位於第一及第二分散單元(20 及 40)之幾何中心點S71向前一距離L3的位置。若距離 L3 滿足下列條件, In the fourth b-picture, the antisymmetry in the basic trajectory can be achieved by if the incident electron beam 62 having the normal energy V 0 has an intersection 62a originally at a specific position on the optical axis. The intersection 62a is located at a geometric center point S71 of the first and second dispersion units (20 and 40) at a position a distance L3 forward. If the distance L3 satisfies the following conditions,

其中 f 表示每個分散單元的聚焦功率。第一分散單元 20 將使入射電子束 62聚焦且相應地將其交叉自位置62a向後移動至幾何中心點S71。然後,以相同的方式第二分散單元 40 將入射電子束 62 聚焦並最後將位於 S71的交叉向後移動一距離 L3至一位置 62b。電子束 62中具有正常能量 V0電子的軌跡具有相對於第一及第二分散單元 20 與40的幾何中間平面 31的反對稱性。Where f represents the focus power of each discrete unit. The first dispersion unit 20 will focus the incident electron beam 62 and correspondingly move it backward from position 62a to the geometric center point S71. Then, in the same manner, the second dispersion unit 40 focuses the incident electron beam 62 and finally moves the intersection at S71 backward by a distance L3 to a position 62b. The trajectory of the electron beam 62 having the normal energy V 0 electrons has an antisymmetry with respect to the geometric intermediate plane 31 of the first and second dispersion units 20 and 40.

因此,第四a圖與第四b圖中所示的雙對稱可確保一電子束在中間平面 31形成一真實交叉以及在自中間平面31向後一距離形成一虛擬交叉。在真實交叉內,具正常能量的電子集中進入至一光軸上的一小圓平面,且具有自正常能量偏離相同能量變化値集中進入至一位於遠離光軸位置的一小圓平面。能量變化値越大,圓平面離光軸就越遠。若孔徑 30設定在真實交叉所在的中間平面,所有圓平面內具有離軸距離大於孔徑 30內半徑的電子會被截斷。換句話說,通過孔徑 30 的電子的能量散佈將小於一由第一分散單元的分散功率及孔徑 30內半徑決定的特定值。在虛擬交叉內,所有的電子集中進入一光軸上小圓平面。與進入第一分散單元20的粒子束相比,自第二分散單元40射出的粒子束具有較小能量散佈、一幾乎未變的交叉尺寸以及一向後移動的交叉。Therefore, the double symmetry shown in the fourth a map and the fourth b graph ensures that an electron beam forms a true intersection in the intermediate plane 31 and a virtual intersection at a distance from the intermediate plane 31. Within the true intersection, electrons with normal energy concentrate into a small circular plane on an optical axis, and have the same energy change from normal energy, concentrating into a small circular plane located away from the optical axis. The greater the change in energy, the farther the circular plane is from the optical axis. If the aperture 30 is set to the midplane in which the true intersection is located, electrons having an off-axis distance greater than the radius within the aperture 30 in all of the circular planes are truncated. In other words, the energy spread of electrons passing through the aperture 30 will be less than a specific value determined by the dispersion power of the first dispersion unit and the radius within the aperture 30. Within the virtual intersection, all of the electrons are concentrated into a small circular plane on an optical axis. The particle beam emitted from the second dispersing unit 40 has a smaller energy spread, an almost unaltered cross size, and a backward moving cross as compared to the particle beam entering the first dispersing unit 20.

第五圖顯示本發明一基於第四a圖與第四b圖中所示的雙對稱的單色器實施例。從電子粒子束入口側至出口側,單色器 500包含一粒子束調整元件100、一第一分散單元 200、能量限制孔徑300及一第二分散單元 400。所有元件(100-400)排成一列並垂直光軸Z。二分散單元 200與400構造相同且位於並對稱地朝向也是垂直光學軸Z的平面310。能量限制孔徑300係位於平面310。與第四a圖及第四b圖相比,每當入射電子束在交叉位置改變及/或正常能量為了一些好的理由及/或第一分散單元 200的分散功率改變以改變在單色器後的電子束的能量散佈,在第五圖中加入粒子束調整單元 100以確保維持雙對稱。換句話說,粒子束調整元件強化了單色器的適用性及彈性。The fifth figure shows a dual symmetrical monochromator embodiment based on the fourth a and fourth b diagrams of the present invention. The monochromator 500 includes a particle beam adjusting element 100, a first dispersing unit 200, an energy limiting aperture 300, and a second dispersing unit 400 from the inlet side to the outlet side of the electron beam. All components (100-400) are arranged in a row and perpendicular to the optical axis Z. The two dispersing units 200 and 400 are identical in construction and are located symmetrically toward a plane 310 which is also a vertical optical axis Z. The energy limiting aperture 300 is located on the plane 310. Compared to the fourth a and fourth b, the incident electron beam changes at the intersection position and/or the normal energy changes for some good reason and/or the dispersion power of the first dispersion unit 200 changes to change in the monochromator After the energy dispersion of the electron beam, the particle beam adjusting unit 100 is added in the fifth figure to ensure that the double symmetry is maintained. In other words, the particle beam adjustment element enhances the applicability and flexibility of the monochromator.

在第五圖中,粒子束調整元件 100 包含一可以是靜電或磁性的圓透鏡。每個分散單元 (200、 400) 包含可以是靜電或磁性的一Wien過濾器及一散光像差補償器,兩者都沿 Z 軸相互疊加。能量限制孔徑300的形狀可為圓形、橢圓形、正方形或長方形。若孔徑形狀是橢圓或矩形,其較短軸或短邊係位於第一分散單元 200的分散方向。在分散方向的孔徑尺寸係根據所需的能量散佈的減少程度及第一分散單元 200的分散功率選擇。In the fifth figure, the particle beam adjusting element 100 includes a circular lens which may be electrostatic or magnetic. Each of the dispersing units (200, 400) includes a Wien filter that can be electrostatic or magnetic and an astigmatic aberration compensator, both of which are superposed on each other along the Z axis. The shape of the energy limiting aperture 300 can be circular, elliptical, square or rectangular. If the aperture shape is elliptical or rectangular, its shorter axis or shorter side is located in the direction of dispersion of the first dispersion unit 200. The pore size in the dispersion direction is selected in accordance with the degree of reduction in the required energy dispersion and the dispersion power of the first dispersion unit 200.

第五圖中所示的單色器的操作方法將於第六a圖至第六f圖中逐步表示。第六a圖  顯示粒子束調整元件 100的的功能。S1 是電子源或具有正常能量 V0及原始能量散佈±ΔV0且能量散佈將被減為±ΔV1的電子束交叉。若S1為一電子束交叉,其可位於單色器的入口側或出口側。S2 係由方程式(2.2)所示的方式所決定形成基本軌跡中的反對稱所需的位置。因此粒子束調整元件 100一開始將來自電子源S1的電子束聚焦以形成一在進入第一分散單元 200前於S2會聚的粒子束。更具體地說,粒子束調整元件 100 的聚焦功率隨入射電子束交叉的初始位置S1的改變以及第一分散單元 200的聚焦功率 f而改變。後者隨第一分散單元 200的分散功率改變。The method of operation of the monochromator shown in the fifth figure will be shown step by step in the sixth to sixth f diagrams. Figure 6a shows the function of the particle beam adjusting element 100. S1 is an electron source or electron beam crossing with normal energy V 0 and original energy spread ± ΔV 0 and energy spread will be reduced to ± ΔV 1 . If S1 is an electron beam crossing, it may be located on the inlet side or the outlet side of the monochromator. S2 is determined by the way shown in equation (2.2) to form the position required for antisymmetry in the basic trajectory. The particle beam adjustment element 100 initially focuses the electron beam from the electron source S1 to form a particle beam that converges at S2 before entering the first dispersion unit 200. More specifically, the focusing power of the particle beam adjusting element 100 changes with the change of the initial position S1 at which the incident electron beam intersects and the focusing power f of the first dispersion unit 200. The latter changes with the dispersion power of the first dispersion unit 200.

第六b圖與第六c圖顯示第一分散單元 200對入射粒子束分別在 XOZ 平面及YOZ 平面上的影響。在第一分散單元 200中的Wien過濾器被激發以滿足Wien條件並產生一所需的 X 方向折射散佈於入射電子束。第一分散單元 200中的散光像差補償器被激發以補償在在第一分散單元 200中的Wien過濾器產生的像差。在像差補償後殘餘的共焦聚焦功率 f將入射粒子束聚焦在中間平面310上形成一自第六a圖中所示S2向後的真實交叉。由於Wien過濾器的X 方向折射散佈,只有具有正常能量的電子會集中進入一軸上圓平面 S3。根據磁偏折方向,由具有能量變化dV (>0)與-dV的電子形成的圓平面 S4 與 S5 分別自光軸的X 與–X方向偏移。能量變化dV越大,離軸偏移也越大。在 Y 方向,圓平面S3、 S4 與 S5 的光碟均位於光軸如第六c 圖 所示。The sixth b diagram and the sixth c diagram show the influence of the first dispersion unit 200 on the incident particle beam on the XOZ plane and the YOZ plane, respectively. The Wien filter in the first dispersion unit 200 is excited to satisfy the Wien condition and produces a desired X-direction refraction spread over the incident electron beam. The astigmatic aberration compensator in the first dispersion unit 200 is excited to compensate for the aberration generated by the Wien filter in the first dispersion unit 200. The residual confocal focusing power f after aberration compensation focuses the incident particle beam on the intermediate plane 310 to form a true intersection from S2 shown in the sixth a diagram. Due to the X-direction refraction of the Wien filter, only electrons with normal energy are concentrated into the on-axis circular plane S3. According to the magnetic deflection direction, the circular planes S4 and S5 formed by electrons having energy changes dV (>0) and -dV are respectively shifted from the X and -X directions of the optical axis. The larger the energy change dV, the larger the off-axis offset. In the Y direction, the discs of the circular planes S3, S4 and S5 are located on the optical axis as shown in the sixth c diagram.

第六d圖 顯示能量限制孔徑 300的電子散佈。在第六d圖中,只顯示具有正常能量V0的電子顯示以及六個特定的能量變化,且以一圓形孔徑 300 為例。能量限制孔徑 300 的內半徑等於具有能量變化±ΔV1之電子的離軸偏移。如此,電子束帶著減少的能量變化±ΔV1自孔徑 300離開,但一擴大的交叉在 X 方向的尺寸等於能量限制孔徑300的內直徑。減少的能量變化±ΔV1由第一分散單元的分散功率及能量限制孔徑在第一分散單元在分散方向的尺寸決定。The sixth graph shows the electronic dispersion of the energy confinement aperture 300. In the sixth graph, only the electronic display having the normal energy V 0 and the six specific energy changes are shown, and a circular aperture 300 is taken as an example. The inner radius of the energy confinement aperture 300 is equal to the off-axis offset of the electron with an energy change ± ΔV 1 . As such, the electron beam exits from the aperture 300 with a reduced energy change ± ΔV 1 , but the size of an enlarged intersection in the X direction is equal to the inner diameter of the energy limiting aperture 300. The reduced energy change ±ΔV 1 is determined by the dispersion power of the first dispersion unit and the energy-restricted pore size in the dispersion direction of the first dispersion unit.

第六e圖與第六f圖顯示第二分散單元 400在入射粒子束上產生的效應。第二分散單元 400與第一分散單元 200於相同的激發中作用。因此,第二分散單元 400 如同第一分散單元 200對孔徑 300前的電子束所作的ㄧ般將來自中間平面 310中真實交叉的電子束折射及聚焦。如第六e 圖中所示在XOZ 平面上,第二分散單元 400不僅將圓平面S3-S5自中間平面 310向後移動 一相同的距離,同時消除存在於真實交叉在 X 方向的圓平面偏移。如第六f圖中所示在YOZ 平面上,第二分散單元 400將圓平面S3-S5如同在 XOZ向後移動一相同的距離。因此,自第二分散單元 400離開後,自第六b圖及第六c圖所示三個圓平面S3-S5離開的電子實際上幾乎在光軸 Z上相同的位置交叉並形成一虛擬交叉S6。虛擬交叉S6係位於第一分散單元 200及中間平面 310之間,並在未損失主要部份情況下具有ㄧ遠比第六d 圖中所示的能量限制孔徑 300內直徑或能量限制孔徑 300在分散方向的尺寸小的尺寸。The sixth e-figure and the sixth f-figure show the effect produced by the second dispersing unit 400 on the incident particle beam. The second dispersion unit 400 functions in the same excitation as the first dispersion unit 200. Therefore, the second dispersion unit 400 refracts and focuses the electron beam from the true intersection in the intermediate plane 310 as the first dispersion unit 200 makes to the electron beam in front of the aperture 300. As shown in the sixth e-picture, in the XOZ plane, the second dispersing unit 400 not only moves the circular planes S3-S5 backward by the same distance from the intermediate plane 310, but also eliminates the circular plane offset existing in the X direction of the true intersection. . On the YOZ plane as shown in the sixth f-picture, the second dispersion unit 400 moves the circular planes S3-S5 by the same distance as XOZ backwards. Therefore, after leaving the second dispersion unit 400, the electrons leaving from the three circular planes S3-S5 shown in the sixth b and sixth c diagrams actually intersect at almost the same position on the optical axis Z and form a virtual cross. S6. The virtual crossover S6 is located between the first dispersing unit 200 and the intermediate plane 310, and has an inner diameter or energy limiting aperture 300 of the energy limiting aperture 300 as shown in the sixth d diagram without loss of the main portion. A small size in the direction of dispersion.

第七a圖 與第八圖分別顯示使用上述及第五圖及第六a圖至第六f圖所示單色器的掃描式電子顯微鏡的兩個實施例。為了簡單起見,並未顯示偏向掃描。在第七a圖中,一電子源 600 發射沿光軸Z的電子束 700。一第一電流限制孔徑 610 切斷電子束 700的一部分,以限制電子束電流進入單色器500。單色器500中一大電子束電流在電子束聚焦範圍內將產生一強電子交互作用,尤其是在位於能量限制孔徑 300中心區域的真實交叉,因此在單色器中出現一額外能量散佈及一交叉尺寸增加。因此,必須限制電子束電流至一能使電子相互作用之效應不明顯程度的範圍。The seventh and eighth figures respectively show two embodiments of a scanning electron microscope using the monochromators shown in the above and fifth and sixth to sixth f diagrams. For the sake of simplicity, the bias scan is not shown. In Figure 7a, an electron source 600 emits an electron beam 700 along the optical axis Z. A first current limiting aperture 610 cuts a portion of the electron beam 700 to limit the beam current into the monochromator 500. A large beam current in the monochromator 500 will produce a strong electronic interaction within the electron beam focus range, especially at the true intersection of the central region of the energy limiting aperture 300, thus creating an additional energy spread in the monochromator and A cross size increases. Therefore, it is necessary to limit the beam current to a range in which the effect of the electron interaction is not significant.

在第七a圖的單色器500中,起初電子束被粒子束調整元件 100聚焦成所需的會聚粒子束。然後會聚粒子束分散並被第一分散單元 200 聚焦。具體地說,具有正常能量的電子實質上直線通過並形成一在光軸上及能量限制孔徑 300中心的共焦真實交叉,具有相同相對於正常能量的能量變化的電子則被偏折並形成一遠離光軸但卻是在能量限制孔徑 300所在平面上的共焦真實交叉。電子的能量變化越大,交叉離光軸就越遠。能量限制孔徑 300 然後將能量變化在所需範圍±ΔV1外的電子切斷,以使離開的電子束具有一已減少的能量分散±ΔV1In the monochromator 500 of the seventh graph, the electron beam is initially focused by the particle beam adjusting element 100 into a desired bundle of converging particles. The concentrated particle beam is then dispersed and focused by the first dispersion unit 200. Specifically, electrons having normal energy pass substantially straight through and form a true confocal intersection on the optical axis and at the center of the energy confining aperture 300, and electrons having the same energy change with respect to normal energy are deflected and form a Far from the optical axis but the confocal true intersection on the plane of the energy limiting aperture 300. The greater the change in the energy of the electron, the farther it crosses the optical axis. The energy confinement aperture 300 then cuts the electrons outside of the desired range ± ΔV 1 to cause the exiting electron beam to have a reduced energy dispersion ± ΔV 1 .

隨後在第七a圖的單色器 500中,從能量限制孔徑 300 出來的電子將進入第二分散單元 400。第二分散單元 400 與第一分散單元 200以 相同方式運作。因此第二分散單元 400使電子自每個能量限制孔徑 300上的交叉偏折遠離具有相同角度的光軸並將電子聚焦以如同第一分散單元 200一般,在一自最後對應真實交叉向後相同軸上距離的位置形成一位置虛擬交叉。不過,此處所有虛擬交叉虛擬地位於光軸上同一處。因此,所有從單色器離開的電子看來像從虛擬電子源 602射出且具有在所需範圍±Δ 1V內的能量變化。Subsequently, in the monochromator 500 of the seventh diagram, electrons coming out of the energy confinement aperture 300 will enter the second dispersion unit 400. The second dispersion unit 400 operates in the same manner as the first dispersion unit 200. The second dispersing unit 400 thus deflects the intersection of electrons from each of the energy confining apertures 300 away from the optical axis having the same angle and focuses the electrons as if it were the first dispersing unit 200, in the same axis from the last corresponding true cross. The position of the upper distance forms a virtual intersection of positions. However, here all virtual intersections are virtually identical on the optical axis. Thus, all electrons exiting the monochromator appear to be ejected from the virtual electron source 602 and have an energy variation within the desired range ± Δ 1 V.

在第七a圖中,從單色器 500離開的電子束然後進入一傳統的掃描式電子顯微鏡的後續成像系統,並由聚光鏡620及物鏡 640 聚焦到試片650的表面上。聚光鏡及粒子束限制孔徑 630 一起控制最終探針電流。事實上,粒子束限制孔徑 630具有與能量角度過濾相同的額外效應,如第七b圖所示。雖然所有從單色器 500離開的電子均於光軸上的同一位置602虛擬交叉,但具有能量變化的電子累積第一及第二分散單元 200 及 400產生的折射角。因此,具有相同能量變化的電子具有一在粒子束限制孔徑 630上的相等額外橫移,且一些具有較大極角的電子將被粒子束限制孔徑 630阻擋,如第七b圖 的陰影部分所示。能量變化是越大,不會通過粒子束限制孔徑 630的電子越多,所以粒子束限制孔徑 630 實際上進一步減少進入後續將電子束聚焦在試片 650上的物鏡 640之電子束的有效能量散佈。因此探針點的色散像差將會減少且探針點的尺寸將小於沒有使用單色器的探針點。In the seventh diagram, the electron beam exiting from the monochromator 500 then enters a subsequent imaging system of a conventional scanning electron microscope and is focused by the condensing mirror 620 and the objective lens 640 onto the surface of the test strip 650. The condenser and particle beam limiting aperture 630 together control the final probe current. In fact, the particle beam confinement aperture 630 has the same additional effects as the energy angle filtering, as shown in Figure 7b. Although all of the electrons exiting from the monochromator 500 are virtually intersected at the same position 602 on the optical axis, electrons having a change in energy accumulate the angle of refraction produced by the first and second dispersion units 200 and 400. Thus, electrons having the same energy change have an equal additional traverse on the particle beam confinement aperture 630, and some electrons having a larger polar angle will be blocked by the particle beam confinement aperture 630, as in the shaded portion of Figure 7b. Show. The greater the change in energy, the more electrons that do not pass through the particle beam limiting aperture 630, so the particle beam limiting aperture 630 actually further reduces the effective energy dispersion of the electron beam entering the objective lens 640 that focuses the electron beam on the test strip 650. . Therefore, the dispersion aberration of the probe point will be reduced and the size of the probe point will be smaller than the probe point without the monochromator.

眾所周知的是由於具有能量變化大於限制値的電子會被切斷使得使用單色器提高成像解析度會犧牲一部分探針束電流。對於需要使用大探針束電流的應用而言,除了粒子束調整單元100之外單色器500可被停用,如第七 c 圖 中所示。在此情況下,粒子束調整單元 100 將取代原來的聚光鏡620作為聚光鏡。通常較接近電子源並且更遠離粒子束限制孔徑的聚光鏡會產生一比相反條件情況下較小的像差。It is well known that electrons having an energy change greater than the limit enthalpy can be cut such that using a monochromator to increase imaging resolution sacrifices a portion of the probe beam current. For applications requiring the use of large probe beam currents, monochromator 500 can be deactivated in addition to particle beam conditioning unit 100, as shown in Figure 7c. In this case, the particle beam adjusting unit 100 will replace the original condensing mirror 620 as a condensing mirror. A concentrating mirror that is generally closer to the electron source and further away from the particle beam limiting aperture produces a smaller aberration than the opposite condition.

第八圖顯示使用單色器的掃描式電子顯微鏡的另一實施例,其中掃描式電子顯微鏡原本就具有位於物鏡 640前一固定位置的真實交叉602。在第八圖中,電子源 600 沿光軸Z發射一電子束 700。聚光鏡620及粒子束限制孔徑 630 控制進入單色器的粒子束電流。隨後在單色器500中,電子束將經歷如第七a圖中所述的相同能量過濾。從單色器 500 離開的粒子束具有虛擬交叉602 及減少的能量散佈。對於需要使用大探針束電流的應用而言,除了粒子束調整單元 100之外可以停用單色器500。在此情況下,粒子束調整單元 100 可將電子束聚焦以在相同位置具有一真實交叉 620。然後物鏡 640將電子束聚焦在試片650的表面。因此探針點的色散像差將會減少且探針點的尺寸將比沒有使用單色器的探針點小。The eighth figure shows another embodiment of a scanning electron microscope using a monochromator in which the scanning electron microscope originally has a true intersection 602 at a fixed position in front of the objective lens 640. In the eighth diagram, electron source 600 emits an electron beam 700 along optical axis Z. Condenser 620 and particle beam limiting aperture 630 control the beam current entering the monochromator. Then in monochromator 500, the electron beam will undergo the same energy filtering as described in Figure 7a. The particle beam exiting the monochromator 500 has a virtual intersection 602 and reduced energy spread. For applications requiring the use of large probe beam currents, the monochromator 500 can be deactivated in addition to the particle beam conditioning unit 100. In this case, the particle beam adjusting unit 100 can focus the electron beam to have a true intersection 620 at the same position. The objective lens 640 then focuses the electron beam on the surface of the test strip 650. Therefore, the dispersion aberration of the probe point will be reduced and the size of the probe point will be smaller than the probe point without the monochromator.

回到第四a圖,若分散單元 20 與 40之折射角a1與a2彼此不相等但具有一比例對稱關係,其顯示於方程式(2.3),距離 L2會改變比例關係如方程式(2.4)中所示。類似於方程式(2.1),距離L2並不隨折射角a1改變,若省略所有高於第一級的項。此時離開粒子束的第一級散佈消失且二分散單元之分散功率簡單地具有如方程式(2.5)所示的一比例關係。因此二具有分散功率比例關係的分散單元亦可實現無分散交叉的能量過濾。 Returning to the fourth a diagram, if the refraction angles a1 and a2 of the dispersing units 20 and 40 are not equal to each other but have a proportional symmetry relationship, which is shown in equation (2.3), the distance L 2 changes the proportional relationship as in equation (2.4). Shown. Similar to equation (2.1), the distance L 2 does not change with the angle of refraction a1 if all items above the first level are omitted. At this time, the first-stage dispersion leaving the particle beam disappears and the dispersion power of the two-dispersion unit simply has a proportional relationship as shown in the equation (2.5). Therefore, the dispersing unit having the dispersion power proportional relationship can also realize the energy filtering without the dispersion cross.

第九a圖與第九b圖顯示這種情況下的分散補償與基本軌跡。在第九a圖中,二分散單元20P與40P及一能量限制孔徑30P沿一光軸Z對齊。一沿軸電子束50沿光軸Z移動並連續通過第一分散單元20P、能量限制孔徑30P與第二分散單元40P。對於一具有自電子束50之正常能量偏離之一能量的電子71而言,二分散單元20P與40P之分散功率被設定使折射角a1與a2具有一方程式(2.3)所示之比例k。離開第二分散單元40P後電子71的軌跡虛擬地通過光軸自第二分散單元40P中心倒回距離L2的位置,且距離L2取決於如方程式(2.3)所示之比例k。交叉點P71將二分散單元之間的區間L1區分為二區間L4與L2。根據方程式(2.4),區間L4與L2的比例亦等於比例k。平面32垂直於光軸Z並包含交叉點P71。能量限制孔徑30P係位於平面32。因此二分散單元形成一相對於平面32或能量限制孔徑30P的分散之比例對稱。 The ninth and ninth b diagrams show the dispersion compensation and the basic trajectory in this case. In the ninth a diagram, the two dispersion units 20P and 40P and an energy limiting aperture 30P are aligned along an optical axis Z. Along the axial electron beam 50 moves along the optical axis Z and continuously passes through the first dispersion unit 20P, the energy limiting aperture 30P and the second dispersion unit 40P. For an electron 71 having an energy offset from the normal energy of the electron beam 50, the dispersion power of the two dispersion units 20P and 40P is set such that the refraction angles a1 and a2 have a ratio k as shown by one of the equations (2.3). After leaving the second dispersing unit 40P trajectories of electrons through the virtual axis 71 from the second dispersing unit 40P center position rewind distance L 2, and L 2 depending on the distance as in equation (2.3) shown in the ratio k. The intersection P71 divides the interval L 1 between the two dispersion units into two intervals L 4 and L 2 . According to equation (2.4), the ratio of the interval L 4 to L 2 is also equal to the ratio k. The plane 32 is perpendicular to the optical axis Z and contains an intersection P71. The energy limiting aperture 30P is located on the plane 32. The two dispersing units thus form a proportional symmetry with respect to the dispersion of the plane 32 or the energy limiting aperture 30P.

每一分散單元20P與40P可僅具有一Wien過濾器或具有一Wien過濾器與一可補償Wien過濾器之像散的散光像差補償器。在第九a圖所示之分散補償的基礎上,第九b圖顯示當每一分散單元具有一Wien過濾器與一散光像差補償器的基本軌跡。如上述每一分散單元因此在X與Y方向具有隨分散功率增加的相同聚焦功率。在第九b圖中,具有正常能量0V電子束62原本在光軸上並介於交叉點P71與第二分散單元40P之間的特定位置62a具有一交叉。若交叉點P71與交叉62a之間的距離L3滿足以下條件, Each of the dispersing units 20P and 40P may have only one Wien filter or an astigmatic aberration compensator having a Wien filter and an astigmatism that compensates for the Wien filter. On the basis of the dispersion compensation shown in Fig. 9a, the ninth bth diagram shows the basic trajectory of each of the dispersion units having a Wien filter and an astigmatic aberration compensator. Each of the dispersion units as described above thus has the same focus power that increases with the dispersion power in the X and Y directions. In the ninth bth diagram, the electron beam 62 having the normal energy 0 V has an intersection on the optical axis and at a specific position 62a between the intersection P71 and the second dispersion unit 40P. If the distance L 3 between the intersection P71 and the intersection 62a satisfies the following conditions,

其中1f表示第一分散單元20P的聚焦功率,第一分散單元20P會將入射電子束62聚焦並因此將其交叉點自交叉62a向後移至交叉點P71,換言之,至能量限制孔徑30P的中心。接著第二分散單元40P會將電子束62聚焦並且將交叉點P71向後移動一距離L5至L2位置62a。距離L5改變第二分散單元40P之聚焦功率2f,如方程式(2.8)所示。在成比例關係的區間L4與L2中,電子束62中的電子軌跡相對於能量限制孔徑30P具有反對稱性。 Where 1 f represents the focus power of the first dispersion unit 20P, and the first dispersion unit 20P will focus the incident electron beam 62 and thus move its intersection from the intersection 62a back to the intersection P71, in other words, to the center of the energy limiting aperture 30P . The second dispersion unit 40P then focuses the electron beam 62 and moves the intersection P71 backward by a distance L 5 to L 2 position 62a. The distance L 5 changes the focus power 2 f of the second dispersion unit 40P as shown in equation (2.8). In the intervals L 4 and L 2 of the proportional relationship, the electron trajectories in the electron beam 62 have an antisymmetry with respect to the energy limiting aperture 30P.

因此二分散單元20P與40P形成第九a圖與第九b圖所示之分散的雙重比例對稱及基本軌跡,其可確保一電子束於平面32上形成真實的分散交叉以及首先形成於平面32上接著向後移動距離L5的無分散虛擬交叉。與第四a圖及第 4b 圖中所示的雙對稱相比,雙重比例對稱提供更多的可能性以實現一具有無分散交叉之能量過濾。The two dispersion units 20P and 40P thus form a dispersed double-scale symmetry and a basic trajectory as shown in the ninth and ninth bth diagrams, which ensures that an electron beam forms a true dispersed intersection on the plane 32 and is first formed on the plane 32. The non-dispersive virtual cross of the distance L 5 is then moved back and forth. Dual proportional symmetry provides more possibilities to achieve an energy filter with no discrete intersections than the double symmetry shown in the fourth and fourth graphs.

第十圖顯示本發明一基於第九a圖與第九b圖所示之分散的雙重比例對稱之單色器的實施例。自電子束進入一側至離開的一側,單色器500P包含一粒子束調整元件100P、一第一分散單元200P、一能量限制孔徑300P及一第二分散單元400P。所有的元件(100P~400P)均對齊並垂直於光軸Z。二分散單元200P與 400P之分散功率設定為具有一比例k,且能量限制孔徑300P係位於平面320。平面320將二分散單元200P與 400P之間的區間L1以比例k區分為二區間L4與L2。與第九a圖與第九b圖相比,加入粒子束調整元件100P以確保入射電子束不論是在某些好的理由之下交叉位置及或正常能量改變時,及或在通過單色器後第一分散單元200P的分散功率改變以改變電子束的能量散佈時,能維持雙重比例對稱。換句話說,粒子束調整元件增強了單色器的應用性與彈性。The tenth graph shows an embodiment of the present invention based on a dispersed dual-proportional symmetrical monochromator shown in the ninth and fifth lb diagrams. The monochromator 500P includes a particle beam adjusting element 100P, a first dispersing unit 200P, an energy limiting aperture 300P, and a second dispersing unit 400P from the side where the electron beam enters to the side away from the electron beam. All components (100P~400P) are aligned and perpendicular to the optical axis Z. The dispersion power of the two dispersion units 200P and 400P is set to have a ratio k, and the energy restriction aperture 300P is located on the plane 320. The plane 320 divides the interval L 1 between the two dispersion units 200P and 400P into two intervals L 4 and L 2 by a ratio k. In contrast to the ninth and fifth lbs, the particle beam modulating element 100P is added to ensure that the incident electron beam, whether for some good reason, crosses the position and or changes in normal energy, or passes through the monochromator When the dispersion power of the first first dispersion unit 200P is changed to change the energy dispersion of the electron beam, the double proportional symmetry can be maintained. In other words, the particle beam adjustment element enhances the applicability and flexibility of the monochromator.

在第十圖中,粒子束調整元件100P包含一可為靜電或磁性的圓透鏡。二分散單元200P與 400P可僅包含一Wien過濾器或包含一Wien過濾器與一可為靜電或磁性的散光像差補償器。能量限制孔徑300P的形狀可為圓形、橢圓形、正方形或長方形。能量限制孔徑300P在分散方向的孔徑尺寸選擇係根據所需的能量散佈縮減以及第一分散單元200P的分散功率。In the tenth diagram, the particle beam adjusting element 100P includes a circular lens which can be electrostatic or magnetic. The two dispersion units 200P and 400P may comprise only one Wien filter or a Wien filter and an astigmatic aberration compensator that may be electrostatic or magnetic. The shape of the energy limiting aperture 300P may be circular, elliptical, square or rectangular. The aperture size selection of the energy limiting aperture 300P in the dispersion direction is based on the required energy dispersion reduction and the dispersion power of the first dispersion unit 200P.

第十一圖顯示本發明另一就第九a圖與第九b圖所示之分散的雙重比例對稱的變化而言之單色器510P的實施例。自電子束進入一側至離開的一側,單色器510P包含一第一分散單元210P、一粒子束調整元件110P、一能量限制孔徑310P及一第二分散單元410P。所有的元件(110P~410P)均對齊並垂直於光軸Z。能量限制孔徑310P係位於平面330。平面330將二分散單元210P與 410P之間的區間L1,二區間L4與L2的比例未必為1。第一分散單元210P的分散功率及粒子束調整元件110P的聚焦功率均設定為獲得一入射粒子束在平面330或能量限制孔徑310P上所需的分散及一真實的交叉,而第二分散單元410P的分散功率設定為形成入射粒子束在平面330上無分散虛擬交叉。The eleventh embodiment shows another embodiment of the monochromator 510P of the present invention in terms of the dispersion of the double proportional symmetry of the dispersion shown in the ninth and ninth bth views. The monochromator 510P includes a first dispersion unit 210P, a particle beam adjustment element 110P, an energy limiting aperture 310P, and a second dispersion unit 410P from the side of the electron beam entering the side to the exit side. All components (110P~410P) are aligned and perpendicular to the optical axis Z. The energy limiting aperture 310P is located on the plane 330. The plane 330 sets the interval L 1 between the two dispersion units 210P and 410P, and the ratio of the two intervals L 4 to L 2 is not necessarily one. The dispersion power of the first dispersion unit 210P and the focus power of the particle beam adjustment element 110P are both set to obtain a desired dispersion and a true intersection of an incident particle beam on the plane 330 or the energy confinement aperture 310P, and the second dispersion unit 410P The dispersion power is set to form an incident particle beam with no discrete virtual intersections on plane 330.

與單色器500P相同,單色器500P與510P能被以第七a圖與第八圖所示的方式應用在掃描式電子顯微鏡上。此外,單色器500P與510P能提供更多在製造與應用上的彈性。對於單色器500P而言,若有需要射出電子束虛擬交叉602 (第七a圖與第八圖中)非常接近電子源600的應用時,二分散單元的比例k可被設定為小於1。若有需要能量散佈縮減的應用,而能量限制孔徑300P須具有製造上有困難的小尺寸時,使用一較大的比例k值可移動能量限制孔徑300P靠近第二分散單元400P,以使能量限制孔徑300P的所需尺寸增加。Like the monochromator 500P, the monochromators 500P and 510P can be applied to a scanning electron microscope in the manner shown in the seventh and eighth figures. In addition, the monochromators 500P and 510P provide more flexibility in manufacturing and application. For the monochromator 500P, the ratio k of the second dispersion unit can be set to be less than one if it is necessary to project the electron beam virtual intersection 602 (in the seventh and eighth figures) very close to the application of the electron source 600. If there is a need for energy dispersion reduction, and the energy limiting aperture 300P has to have a small size that is difficult to manufacture, a larger ratio k value is used to move the energy limiting aperture 300P closer to the second dispersion unit 400P to limit the energy. The required size of the aperture 300P is increased.

請再次參考第四a圖(或第九a圖),一所需的能量散佈縮減值可能需要能量限制孔徑30 (或30P)具有一在分散方向(在X方向)的微小尺寸,其在製造上可能十分困難。此時能量限制孔徑可由二各自具有一刀刃邊緣的平板形成。二平板之二刀刃邊緣在分散方向上彼此相對以形成一與光軸對齊之狹縫。藉由預先調整每一在分散方向上的刀刃邊緣位置,狹縫的尺寸可變得非常小。對於一僅需要截斷具有大於或小於一特定值之能量的電子的應用而言,類似於高通過率的過濾或低通過率的過濾,可藉由使用單一刀刃邊緣完成電子阻斷。Referring again to Figure 4a (or Figure 9a), a required energy spread reduction may require the energy limiting aperture 30 (or 30P) to have a small dimension in the dispersion direction (in the X direction) that is in manufacture It can be very difficult. At this time, the energy limiting aperture may be formed by two flat plates each having a blade edge. The two blade edges of the two plates are opposed to each other in the direction of dispersion to form a slit aligned with the optical axis. The size of the slit can be made very small by adjusting the position of the edge of each blade in the direction of dispersion in advance. For applications that only need to intercept electrons having energy greater than or less than a particular value, similar to high pass rate filtering or low pass rate filtering, electron blocking can be accomplished by using a single edge of the blade.

以第十圖中的單色器500P為例,第十二a圖 至第十二c 圖中顯示刀刃型粒子封阻器的三個實施例。在第十二a圖中,單色器500P-B1包含二平板300P-1與300P-2,其中二平板之二刀刃邊緣K1與K2位於相同平面320上,並在X方向(分散方向)上彼此相對以形成一涵蓋光軸Z之狹縫。為了避免二刀刃邊緣在調整狹縫尺寸時發生碰撞的可能性,刀刃邊緣K1與K2可被設置在二不同的平面上。與第十二a圖成對比,第十二b圖中的刀刃邊緣K1係位於比平面320更靠近第二分散單元400P的平面321上。在第十二c 圖中,僅使用單一刀刃邊緣阻斷具有高於一特定值或低於一特定值之能量的電子。在未喪失共通性的前提下,前述的所有方法(例如使用能量限制孔徑或刀刃邊緣)以及其用於阻斷電子的對應實施例一般係分別藉由粒子阻斷裝置與粒子阻斷單元所指出。Taking the monochromator 500P in the tenth diagram as an example, three embodiments of the blade type particle blocker are shown in the twelfth a to tth c. In the twelfth a diagram, the monochromator 500P-B1 includes two flat plates 300P-1 and 300P-2, wherein the two blade edge edges K1 and K2 of the two plates are located on the same plane 320, and are in the X direction (dispersion direction). Opposite each other to form a slit covering the optical axis Z. In order to avoid the possibility of collision of the edges of the two edges when adjusting the slit size, the edge edges K1 and K2 can be arranged on two different planes. In contrast to the twelfth a diagram, the edge K1 of the blade in the twelfth bth is located closer to the plane 321 of the second dispersion unit 400P than the plane 320. In the twelfth c-th graph, electrons having an energy higher than a specific value or lower than a specific value are blocked using only a single blade edge. Without prejudice to commonality, all of the foregoing methods (eg, using energy-restricted apertures or edge edges) and their corresponding embodiments for blocking electrons are generally indicated by a particle blocking device and a particle blocking unit, respectively. .

在本發明中,提供一種能減少主要電子束能量散佈的掃描式電子顯微鏡中的單色器,其用來減少成像的色散色差,以改善掃描式電子顯微鏡的最終成像解析度,尤其是基於低電壓掃描式電子顯微鏡原理的低電壓掃描式電子顯微鏡及相關裝置。單色器使用Wien過濾器作為分散元件以沿一直光軸進行能量過濾,基本上避免引起實際上無法補償的離軸像差。雙重比例對稱性形成於單色器中,其包含相對於在粒子阻斷單元內的一平面的折射散佈與基本軌跡之間的一比例關係。雙重比例對稱性與粒子阻斷單元實現能量取向過濾(高通過率、低通過率與帶狀通過),同時確保離開的帶電粒子束具有一在單色器內且無第一級分散與像散的虛擬交叉。與先前技術中位於單色器出口側的一真實交叉相較,單色器內一虛擬交叉會產生較少的電子交互作用並僅需要對掃描式電子顯微鏡原始設計作較少的修改。此外,本發明的單色器當應用於一裝置時比先前技術具有更廣泛的適用性與更強的彈性。本發明還提供了兩種將單色器整合進入掃描式電子顯微鏡的方法,其一就是將單色器置於電子源與聚光鏡之間,而另一個是將單色器置於粒子束限制孔徑與物鏡之間。前者提供額外能量角度過濾,並且比後者獲得一較小的有效能量散佈。In the present invention, there is provided a monochromator in a scanning electron microscope capable of reducing the energy dispersion of a main electron beam, which is used to reduce the dispersion chromatic aberration of imaging to improve the final imaging resolution of a scanning electron microscope, especially based on low Low-voltage scanning electron microscope and related devices based on the principle of voltage scanning electron microscope. The monochromator uses a Wien filter as a dispersing element to perform energy filtering along the optical axis, substantially avoiding off-axis aberrations that are practically uncompensable. The dual proportional symmetry is formed in a monochromator that includes a proportional relationship between the refractive dispersion and a fundamental trajectory with respect to a plane within the particle blocking unit. Dual proportional symmetry and particle blocking unit achieve energy orientation filtering (high pass rate, low pass rate and band pass) while ensuring that the exiting charged particle beam has a monochromator and no first level dispersion and astigmatism Virtual cross. A virtual crossover within the monochromator produces less electronic interaction and requires only minor modifications to the original design of the scanning electron microscope as compared to a real crossover on the exit side of the monochromator in the prior art. Further, the monochromator of the present invention has wider applicability and greater flexibility when applied to a device than the prior art. The invention also provides two methods for integrating a monochromator into a scanning electron microscope, one of which is to place a monochromator between the electron source and the concentrating mirror, and the other is to place the monochromator in the particle beam limiting aperture. Between the objective lens and the objective lens. The former provides additional energy angle filtering and achieves a smaller effective energy spread than the latter.

雖然以上已描述本發明的特定實施例,必須理解的是對於本領域具有一般技術者而言,藉由上述說明內容,將可理解仍有其他與所述實施例相同的實施例。因此必須理解的是本發明並不受限於所示特定實施例,而僅受限逾本發明申請專利範圍之範圍。While the invention has been described with respect to the specific embodiments thereof, it will be understood by those skilled in the art that Therefore, it is to be understood that the invention is not to be limited

1...電子源1. . . Electronic source

2...粒子束2. . . Particle beam

3...次電子束3. . . Secondary electron beam

4...次電子束4. . . Secondary electron beam

5...次電子束5. . . Secondary electron beam

6...真實像散交叉6. . . True astigmatism

7...共焦及無像散交叉7. . . Confocal and astigmatic cross

8...單色器長度8. . . Monochromator length

10...圓形透鏡10. . . Round lens

11...Wien過濾器11. . . Wien filter

12...能量限制孔徑12. . . Energy limited aperture

14...虛擬電子源14. . . Virtual electron source

15...虛擬電子源15. . . Virtual electron source

20...第一分散單元20. . . First dispersion unit

20P...第一分散單元20P. . . First dispersion unit

21...Wien過濾器twenty one. . . Wien filter

30...能量限制孔徑30. . . Energy limited aperture

30P...能量限制孔徑30P. . . Energy limited aperture

31...平面31. . . flat

32...平面32. . . flat

40...第二分散單元40. . . Second dispersion unit

40P...第二分散單元40P. . . Second dispersion unit

50...軸上電子束50. . . On-axis electron beam

61...正常能量V0電子61. . . Normal energy V0 electron

62...入射電子束62. . . Incident electron beam

62a...交叉62a. . . cross

62b...位置62b. . . position

71...正常能量V0電子71. . . Normal energy V0 electron

100...粒子束調整元件100. . . Particle beam adjustment component

100P...粒子束調整元件100P. . . Particle beam adjustment component

110P...粒子束調整元件110P. . . Particle beam adjustment component

200...第一分散單元200. . . First dispersion unit

200P...第一分散單元200P. . . First dispersion unit

210P...第一分散單元210P. . . First dispersion unit

300...能量限制孔徑300. . . Energy limited aperture

300P...能量限制孔徑300P. . . Energy limited aperture

300P-1...平板300P-1. . . flat

300P-2...平板300P-2. . . flat

310...平面310. . . flat

310P...能量限制孔徑310P. . . Energy limited aperture

320...平面320. . . flat

321...平面321. . . flat

330...平面330. . . flat

400...第二分散單元400. . . Second dispersion unit

400P...第二分散單元400P. . . Second dispersion unit

410P...第二分散單元410P. . . Second dispersion unit

500...單色器500. . . Monochromator

500P...單色器500P. . . Monochromator

500P-B1...單色器500P-B1. . . Monochromator

500P-B2...單色器500P-B2. . . Monochromator

500P-B3...單色器500P-B3. . . Monochromator

510P...單色器510P. . . Monochromator

600...電子源600. . . Electronic source

602...真實交叉602. . . True cross

610...電流限制孔徑610. . . Current limiting aperture

620...聚光鏡620. . . Condenser

630...粒子束限制孔徑630. . . Particle beam limiting aperture

640...物鏡640. . . Objective lens

650...試片650. . . Audition

700...電子束700. . . Electron beam

本發明經以下詳細說明伴隨圖示進行說明後將更易於了解領會,其中參考符號標明結構元件,其中:第一圖顯示一Wien過濾器的基本的結構。第二a圖顯示一使用Wien過濾器作為色散元件的單色器的概要圖示。第二b圖顯示一使用Wien過濾器作為色散元件的單色器的概要圖示。第三a圖顯示一使用兩個Wien過濾器的單色器的概要圖示。第三b圖顯示一使用兩個Wien過濾器的單色器的概要圖示。第四a圖顯示一根據本發明的折射色散的對稱性的概要圖示。第四b圖顯示一根據本發明之基本軌跡的反對稱性的概要圖示。第五圖顯示一根據本發明之第一實施例中用於帶電粒子裝置之ㄧ單色器的概要圖示。第六a至六f圖顯示一根據本發明之第五圖所示單色器之功能(XOZ、 YOZ平面)的概要圖示。第七a至七c圖顯示一根據本發明之第二實施例將一單色器整合至掃描式電子顯微鏡的概要圖示。第八圖顯示一根據本發明之第三實施例將一單色器整合至掃描式電子顯微鏡的概要圖示。第九a圖與第九b圖顯示本發明的分散補償與基本軌跡的雙重比例對稱。第十圖顯示本發明一用於帶電粒子裝置之單色器的第四實施例。第十一圖顯示本發明一用於帶電粒子裝置之單色器的第五實施例。第十二a圖 至第十二c 圖顯示用於帶電粒子裝置之單色器的第六實施例。The invention will be more readily understood from the following detailed description, which is illustrated by the accompanying drawings, in which reference numerals indicate structural elements, wherein the first figure shows the basic structure of a Wien filter. Figure 2a shows an overview of a monochromator using a Wien filter as a dispersive element. Figure b is a schematic representation of a monochromator using a Wien filter as a dispersive element. Figure 3a shows an overview of a monochromator using two Wien filters. Figure 3b shows an overview of a monochromator using two Wien filters. Figure 4a shows a schematic representation of the symmetry of a refractive dispersion according to the invention. Figure 4b shows a schematic representation of the antisymmetry of a basic trajectory in accordance with the present invention. The fifth figure shows a schematic illustration of a xenon monochromator for a charged particle device in accordance with a first embodiment of the present invention. The sixth to sixth f diagrams show an outline of the function (XOZ, YOZ plane) of the monochromator shown in the fifth diagram of the present invention. Figures 7a through 7c show a schematic illustration of the integration of a monochromator into a scanning electron microscope in accordance with a second embodiment of the present invention. The eighth figure shows a schematic illustration of the integration of a monochromator into a scanning electron microscope in accordance with a third embodiment of the present invention. The ninth and ninth bth graphs show the double proportional symmetry of the dispersion compensation and the basic trajectory of the present invention. Figure 11 shows a fourth embodiment of a monochromator for a charged particle device of the present invention. Figure 11 shows a fifth embodiment of a monochromator for a charged particle device of the present invention. Figures 12a through 12c show a sixth embodiment of a monochromator for a charged particle device.

20P...第一分散單元20P. . . First dispersion unit

30P...能量限制孔徑30P. . . Energy limited aperture

32...平面32. . . flat

40P...第二分散單元40P. . . Second dispersion unit

50...軸上電子束50. . . On-axis electron beam

61...正常能量V0電子61. . . Normal energy V 0 electron

71...正常能量V0電子71. . . Normal energy V 0 electron

Claims (31)

一種單色器包含:沿直光軸對齊以將具有一正常能量與一能量散佈的帶電粒子束折射的一第一分散單元與一第二分散單元,該帶電粒子束沿光軸通過並包含具有正常的能量直線通過該每一分散單元的帶電粒子以及具有自正常能量改變的能量變化並由該每一分散單元沿一相同分散方向折射的帶電粒子,其中由該每一分散單元產生的每一帶電粒子之折射角係由該每一分散單元的一分散功率及該每一帶電粒子的能量變化決定,其中該第一分散單元與該第二分散單元的該分散方向為分別相等;一粒子阻斷單元,該粒子阻斷單元位於該第一分散單元與該第二分散單元之間;及 一粒子束調整元件,該粒子束調整元件與該直光軸對齊並將該帶電粒子束聚焦以於該粒子阻斷單元內之一平面上形成一真實交叉;其中於該真實交叉內,每一具有能量變化粒子具有一因該第一分散單元產生之該折射角所造成之位置偏移,其中該粒子阻斷單元阻斷位於該真實交叉之一空間區域外之粒子,其中一虛擬交叉於該帶電粒子束被該第二分散單元分散之後形成於該單色器內。A monochromator comprising: a first dispersion unit and a second dispersion unit aligned along a direct optical axis to refract a charged particle beam having a normal energy and an energy dispersion, the charged particle beam passing along the optical axis and comprising Normal energy passes straight through the charged particles of each of the dispersing units and charged particles having energy changes from normal energy changes and refracted by the respective dispersing units in an identical direction of dispersion, wherein each of the discrete units is produced The angle of refraction of the charged particles is determined by a dispersion power of each of the dispersion units and an energy change of the charged particles, wherein the dispersion direction of the first dispersion unit and the second dispersion unit are respectively equal; a cell blocking unit located between the first dispersing unit and the second dispersing unit; and a particle beam adjusting element aligned with the direct optical axis and focusing the charged particle beam Forming a true intersection on a plane in the particle blocking unit; wherein within the real intersection, each particle having energy changes has a cause a positional shift caused by the refraction angle generated by the first dispersing unit, wherein the particle blocking unit blocks particles located outside a spatial region of the real intersection, wherein a virtual crossover of the charged particle beam is caused by the second dispersion The unit is dispersed and formed in the monochromator. 如申請專利範圍第1項所述之單色器,其中該二分散單元之該分散功率具有一比例關係以使該虛擬交叉無第一級分散且位於或接近該平面。The monochromator of claim 1, wherein the distributed power of the two dispersion units has a proportional relationship such that the virtual intersection has no first level dispersion and is located at or near the plane. 如申請專利範圍第2項所述之單色器,其中該粒子束調整元件位於該第一分散單元之一粒子束進入側。The monochromator of claim 2, wherein the particle beam adjusting element is located on a particle beam entering side of one of the first dispersing units. 如申請專利範圍第3項所述之單色器,其中該第一分散單元包含一第一Wien過濾器與一第一散光像差補償器,該第一散光像差補償器補償該第一Wien過濾器產生之像散,該第二分散單元包含一第二Wien過濾器與一第二散光像差補償器,該第二散光像差補償器補償該第二Wien過濾器產生之像散。The monochromator of claim 3, wherein the first dispersing unit comprises a first Wien filter and a first astigmatic aberration compensator, the first astigmatic aberration compensator compensating the first Wien The astigmatism generated by the filter, the second dispersion unit includes a second Wien filter and a second astigmatic aberration compensator, and the second astigmatic aberration compensator compensates for the astigmatism generated by the second Wien filter. 如申請專利範圍第4項所述之單色器,其中該粒子束調整元件為一圓透鏡。The monochromator of claim 4, wherein the particle beam adjusting element is a circular lens. 如申請專利範圍第5項所述之單色器,其中自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由同時以該比例關係改變該第一與第二分散單元之該分散功率及改變該粒子束調整元件之一聚焦功率來改變。The monochromator of claim 5, wherein the one of the charged particle beams leaves the energy dispersion after leaving the monochromator, and the first and second dispersion units are changed by the proportional relationship at the same time. The power is dispersed and the focus power of one of the particle beam adjusting elements is changed to change. 如申請專利範圍第2項所述之單色器,其中該粒子阻斷單元利用一能量限制孔徑阻斷粒子。The monochromator of claim 2, wherein the particle blocking unit blocks the particles with an energy limiting aperture. 如申請專利範圍第7項所述之單色器,其中該粒子阻斷單元於該第一分散單元的該分散方向上具有多個具有不同尺寸的能量限制孔徑自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由使用一不同能量限制孔徑來改變。The monochromator according to claim 7, wherein the particle blocking unit has a plurality of energy-restricted apertures having different sizes in the dispersion direction of the first dispersion unit, and the charging is performed after leaving the monochromator. One of the particle beams leaving the energy spread can be changed by using a different energy limiting aperture. 如申請專利範圍第2項所述之單色器,其中該粒子阻斷單元使用一第一刀刃邊緣以阻斷粒子。The monochromator of claim 2, wherein the particle blocking unit uses a first edge of the blade to block particles. 如申請專利範圍第9項所述之單色器,其中自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由調整位於該第一分散單元的該分散方向上該第一刀刃邊緣之一位置來改變。The monochromator of claim 9, wherein one of the charged particle beams leaves the energy dispersion after leaving the monochromator by adjusting the first blade in the dispersion direction of the first dispersion unit One of the edges changes position. 如申請專利範圍第9項所述之單色器,其中該粒子阻斷單元進一步使用一第二刀刃邊緣以阻斷粒子。The monochromator of claim 9, wherein the particle blocking unit further uses a second edge of the blade to block particles. 如申請專利範圍第11項所述之單色器,其中自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由調整位於該第一分散單元的該分散方向上該二刀刃邊緣之一或二者之位置來改變。The monochromator of claim 11, wherein one of the charged particle beams exits the energy dispersion after leaving the monochromator by adjusting the edge of the two edges in the direction of dispersion of the first dispersion unit Change the position of one or both. 如申請專利範圍第2項所述之單色器,其中該粒子束調整元件位於該第一分散單元與該粒子阻斷單元之間。The monochromator of claim 2, wherein the particle beam adjusting element is located between the first dispersing unit and the particle blocking unit. 一種帶電粒子束裝置,包含: 一帶電粒子源,該帶電粒子源提供一沿該裝置之一直光軸移動之主電子束;一聚光鏡,該聚光鏡與該光學軸對齊以聚焦該主電子束;一物鏡,該物鏡與該光學軸對齊以將該主電子束聚焦在一試片之一發射二次電子的表面上;一接收該二次電子的偵測器;及一根據請求項第一項之單色器,其中該單色器與該光軸對齊並位於該帶電粒子源與該物鏡之間,以減少該主電子束之一能量散佈。A charged particle beam device comprising: a charged particle source, the charged particle source providing a main electron beam moving along a constant optical axis of the device; a condensing mirror aligned with the optical axis to focus the main electron beam; An objective lens aligned with the optical axis to focus the main electron beam on a surface of a test piece that emits secondary electrons; a detector that receives the secondary electron; and a first item according to the request A monochromator wherein the monochromator is aligned with the optical axis and located between the source of charged particles and the objective lens to reduce energy spread of one of the main electron beams. 如申請專利範圍第14項所述之帶電粒子束裝置,其中該二分散單元之該分散功率具有一比例關係以使該帶電粒子束之該虛擬交叉無第一級分散且位於或接近該平面。The charged particle beam device of claim 14, wherein the dispersion power of the two dispersion units has a proportional relationship such that the virtual intersection of the charged particle beam is not dispersed in the first stage and is located at or near the plane. 如申請專利範圍第15項所述之帶電粒子束裝置,其中該單色器之該粒子束調整元件位於該單色器之該第一分散單元之一粒子束進入側。The charged particle beam device of claim 15, wherein the particle beam adjusting element of the monochromator is located on a particle beam entering side of one of the first dispersing units of the monochromator. 如申請專利範圍第16項所述之帶電粒子束裝置,其中該單色器之該粒子束調整元件為一圓透鏡。The charged particle beam device of claim 16, wherein the particle beam adjusting component of the monochromator is a circular lens. 如申請專利範圍第17項所述之帶電粒子束裝置,其中該第一分散單元包含一第一Wien過濾器與一第一散光像差補償器,該第一散光像差補償器補償該第一Wien過濾器產生之像散,該第二分散單元包含一第二Wien過濾器與一第二散光像差補償器,該第二散光像差補償器補償該第二Wien過濾器產生之像散。The charged particle beam device of claim 17, wherein the first dispersion unit comprises a first Wien filter and a first astigmatic aberration compensator, the first astigmatic aberration compensator compensating the first The astigmatism generated by the Wien filter, the second dispersion unit includes a second Wien filter and a second astigmatism aberration compensator, and the second astigmatic aberration compensator compensates for the astigmatism generated by the second Wien filter. 如申請專利範圍第18項所述之帶電粒子束裝置,其中自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由同時以該比例關係改變該第一與第二分散單元之該分散功率及改變該粒子束調整元件之一聚焦功率來改變。The charged particle beam device of claim 18, wherein one of the charged particle beams leaves the energy dispersion after leaving the monochromator, and the first and second dispersion units are simultaneously changed by the proportional relationship. The dispersion power is varied by changing the focus power of one of the particle beam adjustment elements. 如申請專利範圍第18項所述之帶電粒子束裝置,其中該自離開該單色器之後該帶電粒子束之一離開能量散佈可藉由調整粒子阻斷單元以選擇真實交叉的空間區域的對應位置與尺寸來改變。The charged particle beam device of claim 18, wherein the one of the charged particle beams leaving the energy dispersion after leaving the monochromator can adjust the particle blocking unit to select a correspondence of the real intersecting spatial regions. Position and size change. 如申請專利範圍第15項所述之帶電粒子束裝置,更包含一第一板,該第一板具有一位於該帶電粒子源與該聚光鏡之間的一第一粒子束限制孔徑;及一第二板,該第二板具有一位於該聚光鏡與該物鏡之間的一第二粒子束限制孔徑,其中該第一與該第二粒子束限制孔徑與該裝置之該光軸對齊。The charged particle beam device of claim 15, further comprising a first plate having a first particle beam limiting aperture between the charged particle source and the concentrating mirror; a second plate having a second particle beam limiting aperture between the concentrating mirror and the objective lens, wherein the first and second particle beam limiting apertures are aligned with the optical axis of the device. 如申請專利範圍第21項所述之帶電粒子束裝置,其中該單色器係位於該第一板與該聚光鏡之間。The charged particle beam device of claim 21, wherein the monochromator is located between the first plate and the concentrating mirror. 如申請專利範圍第21項所述之帶電粒子束裝置,其中該單色器係位於該第二板與該物鏡之間。The charged particle beam device of claim 21, wherein the monochromator is located between the second plate and the objective lens. 一種單色器包含: 沿該單色器之一直光軸對齊以將具有一正常能量與一能量散佈的帶電粒子束折射的一第一分散單元與一第二分散單元,以將沿該光軸通過之該帶電粒子束之帶電粒子依序折射,每一該分散單元於一分散方向具有一分散功率,因此由該每一分散單元產生的每一帶電粒子之折射角係由該每一分散單元的該分散功率及該每一帶電粒子的能量變化及該帶電粒子束之一正常的能量決定,其中該第一分散單元與該第二分散單元的該分散方向為分別相等;及一粒子阻斷單元,該粒子阻斷單元位於該第一分散單元與該第二分散單元之間,其中該帶電粒子束於該粒子阻斷單元內之一平面上形成一真實交叉,其中於該真實交叉內,每一具有能量變化粒子具有一因該第一分散單元產生之該折射角所造成之位置偏移,其中該粒子阻斷單元阻斷位於該真實交叉之一空間區域外之粒子,其中該第二分散單元之該分散功率使該帶電粒子束形成一無第一級分散且位於或接近該平面的虛擬交叉。A monochromator comprising: a first dispersion unit and a second dispersion unit aligned along a constant optical axis of the monochromator to refract a charged particle beam having a normal energy and an energy dispersion to be along the optical axis The charged particles passing through the charged particle beam are sequentially refracted, and each of the dispersing units has a dispersion power in a dispersion direction, and thus the refractive angle of each charged particle generated by each of the dispersing units is obtained by each of the dispersing units The dispersion power and the energy change of the charged particle and the normal energy of the charged particle beam are determined, wherein the dispersion direction of the first dispersion unit and the second dispersion unit are respectively equal; and a particle blockage a unit, the particle blocking unit is located between the first dispersion unit and the second dispersion unit, wherein the charged particle beam forms a true intersection on a plane in the particle blocking unit, wherein within the real intersection, Each of the energy-changing particles has a positional shift caused by the angle of refraction generated by the first dispersing unit, wherein the particle blocking unit blocks the true cross A particle outside a spatial region of the fork, wherein the dispersed power of the second dispersion unit causes the charged particle beam to form a virtual intersection having no first-order dispersion and located at or near the plane. 如申請專利範圍第24項所述之單色器,其中該粒子阻斷單元利用一能量限制孔徑阻斷粒子。The monochromator of claim 24, wherein the particle blocking unit blocks the particles with an energy limiting aperture. 如申請專利範圍第24項所述之單色器,其中該粒子阻斷單元使用一第一刀刃邊緣以阻斷粒子。The monochromator of claim 24, wherein the particle blocking unit uses a first edge of the blade to block particles. 如申請專利範圍第26項所述之單色器,其中該粒子阻斷單元進一步使用一第二刀刃邊緣以阻斷粒子。The monochromator of claim 26, wherein the particle blocking unit further uses a second edge of the blade to block particles. 一種能量過濾一帶電粒子束的方法,包含:提供一粒子阻斷裝置以阻斷位於該帶電粒子束之一空間區域外之粒子;提供一可產生沿一分散方向的一分散功率之分散裝置,因此以一折射角折射該帶電粒子束之之每一帶電粒子,該折射角由該分散功率及該每一帶電粒子的能量變化及該帶電粒子束之一正常的能量決定;及使用該分散裝置形成一雙重比例對稱,該雙重比例對稱包含均相對於一平面的一於分散功率分佈上的比例對稱與一具有一正常能量的帶電粒子在一軌跡分佈的一比例反對稱,其中該雙重比例對稱首先使該帶電粒子束於該平面形成一真實交叉並具有一取決於該帶電粒子束之能量分布的粒子位置分佈,且該粒子阻斷裝置使該位於該真實交叉之空間區域外之粒子被阻斷,其中該雙重比例對稱接著使該帶電粒子束形成一無第一級分散且具有一減少能量分散的虛擬交叉。A method of energy filtering a charged particle beam, comprising: providing a particle blocking device to block particles located outside a spatial region of the charged particle beam; providing a dispersing device capable of generating a distributed power along a direction of dispersion, Therefore, each charged particle of the charged particle beam is refracted at a refraction angle determined by the dispersion power and the energy change of the charged particle and the normal energy of the charged particle beam; and using the dispersion device Forming a dual proportional symmetry comprising a proportional symmetry on a distributed power distribution relative to a plane and a proportional symmetry of a charged particle having a normal energy in a trajectory distribution, wherein the dual proportional symmetry First, the charged particle beam is formed into a true intersection in the plane and has a particle position distribution depending on the energy distribution of the charged particle beam, and the particle blocking device blocks the particles located outside the real intersecting space region Broken, wherein the double proportional symmetry then causes the charged particle beam to form a first-order dispersion without a reduction The amount of dispersant virtual cross. 如申請專利範圍第28項所述之方法,其中該虛擬交叉位於或接近該平面。The method of claim 28, wherein the virtual intersection is at or near the plane. 一種減少一帶電粒子束之一能量散佈的方法,包含:分散該帶電粒子束,其中每一粒子獲得一由該粒子之能量變化及該帶電粒子束之一正常的能量決定之折射角;對分散之該帶電粒子束聚焦以形成一真實交叉;阻斷位於該真實交叉之一空間區域外之粒子;及分散未被阻斷之該帶電粒子束以形成一無第一級分散的虛擬交叉。A method for reducing energy dispersion of a charged particle beam, comprising: dispersing the charged particle beam, wherein each particle obtains a refraction angle determined by an energy change of the particle and a normal energy of the charged particle beam; The charged particle beam is focused to form a true intersection; the particles located outside of the spatial region of the true intersection are blocked; and the charged particle beam that is not blocked is dispersed to form a virtual intersection without the first level dispersion. 如申請專利範圍第30項所述之方法,其中該虛擬交叉位於或接近該真實交叉。The method of claim 30, wherein the virtual intersection is at or near the true intersection.
TW102119903A 2012-07-18 2013-06-05 Monochromator, charged particle beam apparatus, method for reducing energy spread of charged particle beam and method for energy-filtering particle beam TWI492244B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/551,947 US8592761B2 (en) 2011-05-19 2012-07-18 Monochromator for charged particle beam apparatus

Publications (2)

Publication Number Publication Date
TW201405577A true TW201405577A (en) 2014-02-01
TWI492244B TWI492244B (en) 2015-07-11

Family

ID=50550097

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102119903A TWI492244B (en) 2012-07-18 2013-06-05 Monochromator, charged particle beam apparatus, method for reducing energy spread of charged particle beam and method for energy-filtering particle beam

Country Status (1)

Country Link
TW (1) TWI492244B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11848172B2 (en) 2021-11-09 2023-12-19 Carl Zeiss Smt Gmbh Method for measuring a sample and microscope implementing the method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI225760B (en) * 1999-09-29 2004-12-21 Jordan Valley Applied Radiation Ltd Apparatus and method for X-ray analysis of a sample, and radiation detection apparatus
EP1517353B1 (en) * 2003-09-11 2008-06-25 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam energy width reduction system for charged particle beam system
EP2453461A1 (en) * 2010-11-10 2012-05-16 FEI Company Charged particle source with integrated electrostatic energy filter
US8183526B1 (en) * 2011-02-11 2012-05-22 Electron Optica Mirror monochromator for charged particle beam apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11848172B2 (en) 2021-11-09 2023-12-19 Carl Zeiss Smt Gmbh Method for measuring a sample and microscope implementing the method

Also Published As

Publication number Publication date
TWI492244B (en) 2015-07-11

Similar Documents

Publication Publication Date Title
TWI450306B (en) Monochromator for charged particle beam apparatus
JP6989658B2 (en) Multiple charged particle beam devices
US8592761B2 (en) Monochromator for charged particle beam apparatus
JP6641011B2 (en) Equipment for multiple charged particle beams
US7507956B2 (en) Charged particle beam energy width reduction system for charged particle beam system
JP6490772B2 (en) Charged particle beam equipment
US9425022B2 (en) Monochromator and charged particle apparatus including the same
KR20240042242A (en) Apparatus of plural charged-particle beams
KR102277431B1 (en) Electron beam imaging with dual wien-filter monochromator
US20120025094A1 (en) Charged particle beam system
NL1025182C2 (en) Monochromator and scanning electron microscope using it.
US6878937B1 (en) Prism array for electron beam inspection and defect review
TW565871B (en) Particle-radiation equipment and a device for energy-corrected deflection of a particle-radiation from charged particles as well as method for energy-corrected deflection of a particle-radiation
US9472373B1 (en) Beam separator device, charged particle beam device and methods of operating thereof
US9905391B2 (en) System and method for imaging a sample with an electron beam with a filtered energy spread
JP2019521495A (en) Aberration correction device for an electron microscope and an electron microscope equipped with such a device
US20070200069A1 (en) Double Stage Charged Particle Beam Energy Width Reduction System For Charged Particle Beam System
Steinwand et al. Fabrication and characterization of low aberration micrometer-sized electron lenses
JP2017525123A (en) Electron energy loss spectrometer
TWI492244B (en) Monochromator, charged particle beam apparatus, method for reducing energy spread of charged particle beam and method for energy-filtering particle beam
JP4343951B2 (en) Single stage charged particle beam energy width reduction system for charged particle beam system
US9349566B1 (en) Charged particle beam device, beam deflector device and methods of operating thereof
EP3731255B1 (en) Energy filter and charged particle beam apparatus
JP2007242490A (en) Aberration correction optical device for charged particle beam optical system, and optical system