TWI225760B - Apparatus and method for X-ray analysis of a sample, and radiation detection apparatus - Google Patents

Apparatus and method for X-ray analysis of a sample, and radiation detection apparatus Download PDF

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Publication number
TWI225760B
TWI225760B TW090106732A TW90106732A TWI225760B TW I225760 B TWI225760 B TW I225760B TW 090106732 A TW090106732 A TW 090106732A TW 90106732 A TW90106732 A TW 90106732A TW I225760 B TWI225760 B TW I225760B
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Taiwan
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processing
sample
patent application
photons
scope
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TW090106732A
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Chinese (zh)
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Isaac Mazor
Amos Gvirtzman
Boris Yokhin
Ami Dovrat
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Jordan Valley Applied Radiation Ltd
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Priority claimed from PCT/IL2000/000584 external-priority patent/WO2001024200A1/en
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Abstract

Apparatus for X-ray analysis of a sample includes an X-ray source, which irradiates the sample, and an X-ray detector device, which receives X-rays from the sample responsive to the irradiation. The device includes an array of radiation-sensitive detectors, which generate electrical signals responsive to radiation photons incident thereon. Processing circuitry of the device includes a plurality of signal processing channels, each coupled to process the signals from a respective one of the detectors so as to generate an output dependent upon a rate of incidence of the photons on the respective detector and upon a distribution of the energy of the incident photons.

Description

12257601225760

發明之領娀 本發明係概括關於分析儀器,尤指使用χ—光供薄膜分析 之儀器及方法。 發明之背景 X-光反射測量術(XRR)為一種供測量沉積在基板之薄膜 層厚度,密度及表面品質之熟知技術。若干公司均有發售 白知之X-光反射各十,其中有Techn〇s(0saka , ,Field of the Invention The present invention relates generally to analytical instruments, and more particularly to instruments and methods for analyzing thin films using x-rays. Background of the invention X-ray reflectometry (XRR) is a well-known technique for measuring the thickness, density, and surface quality of thin film layers deposited on a substrate. Several companies have sold X-ray reflections for each of Bai Zhizhi, including Techn0s (0saka,,

SiemensUunich,Germany)及 BedeScientific InstrumenUDurham,UK)。此等反射計一般為利用乂_光束 ’在掠入射’亦即相對於樣本之表面成—小角度,靠近樣 本材料之總外反射部角,輻照一樣本而操作。自樣本反射 之X-光強度之測量為角度之函數’產生干擾條紋之圖案, 其予以分析,以確定引起造成條紋圖案之薄膜層之特性。 X-光強度測量常使用位置敏感檢測器,諸如比例計數哭 陣列檢測器,一般為光電二極管陣列或電荷耦合裝置〆 (charge-coupled device > 簡稱CCD)作成。二 ^在 Komiya等人,其揭示經予參考併入本案之美國專又卞 5, 740, 2 26號,說明一種供進行分析以確定薄膜厚度之 授予Koppel,其揭示經予參考併入本案之美國專 5, 6 1 9, 548號,說明一種依據反射測量術測量之χ— 第 量計。使用一彎曲,反射X-光單色儀,使Χ-1聚焦至厚度 本之表面。一位置敏感檢測器,諸如光雷—1二一樣 列,感測來自表面之X-光反射,並產生一 %> 上、j °。陣 1座生強度信號為角之SiemensUunich, Germany) and BedeScientific Instrumen (Udurham, UK). These reflectometers are generally operated using the 乂 _beam ′ at grazing incidence, that is, a small angle relative to the surface of the sample, close to the total external reflection angle of the sample material, and irradiating the same sample. The measurement of the X-ray intensity reflected from the sample is a function of the angle 'to produce a pattern of interference fringes, which is analyzed to determine the characteristics of the thin film layer that caused the pattern. X-ray intensity measurements are often made using position-sensitive detectors, such as proportional counting array detectors, which are generally made of photodiode arrays or charge-coupled devices (CCD). 2. In Komiya et al., The disclosure of US Patent No. 5,740, 2 26 incorporated into the case by reference, illustrates a grant to Koppel for analysis to determine the film thickness, and the disclosure is incorporated by reference into the case. US Patent No. 5, 6 1 9, 548, describes a χ-number meter based on reflectometry. Use a curved, reflecting X-ray monochromator to focus the X-1 to the thick surface. A position-sensitive detector, such as the Lightning-12 column, senses X-ray reflections from the surface and produces a% > up, j °. The array 1 generates the intensity signal as the angle

1225760 五、發明說明(2) 函數。分析角度相依信號,以確定一 構之特性,包括厚度,密度及表面粗=本之薄膜層之結 授予Barton等人,其揭示經予參考二 第5, 923, 720號,也說明—種本木之吳國專利 先儀。,色儀具有一種逐漸變細對數 儀 先 其經予說明為較之先前技藝單色儀 ^疋^之形狀, 焦斑。自樣本表面反射或樣,面達成較細之 所接收。 射之X—先,被位置敏感檢測器 在反射測里術之技勢,p知夂舌 測哭。m能陳列> ^ a 。種類型之位置敏感X-光檢 ^ 車列一般包含藉c c D或其他掃描機構予以續出 之多重檢測器元件。每一元# g藉/μ ^」成稱于以巧出 .Φ .. , m LL , , 711件累積在頃出前在一段時間之 光電何,並因此無法解析入射[光光子 此等陣列之XRR,僅只記錚入射扁各一匕里或數使用 i禹旦吨古产样士 , 錄入射在母一兀件之總積體賴射 通里。唯有在樣本與檢 士 π处、去处旦^ 皁列之間使用一另外單色儀, ^ 此里j別,但此構形導致信號通過量對實際應 用為太低。 =計數器為-種類型之氣體基位置敏感之[光檢測器 :其提供某些能量解析度’—般約為20%(供6千電子伏線 為1 200電子伏)。然而,此等計數器僅能一次處理一光子 ’導致很緩慢之分析速率。供很多應用,其能量解析度不1 足。 例如在 Journal of Applied Crystallography 22 ( 1 98 9 年),46 0 頁’ Chihab 等人之名稱為 nNew Apparatus for Grazing X-ray Ref 1ectometry in the Angle-Resolved 第6頁 C:\2D-CODE\90-06\90106732.ptd 12257601225760 V. Description of the Invention (2) Function. Analyze the angle-dependent signals to determine the properties of a structure, including thickness, density, and surface roughness. The knots of the thin film layer were awarded to Barton et al., And its disclosure was referenced in No. 5, 923, 720, and also explained—species Mu Zhi Wu Guo patented the first move. The color meter has a tapered logarithmic meter. First, it has been described as having a focal spot shape compared to the prior art monochromator. Reflect or sample from the sample surface to achieve a finer reception. Shooting X—First, the position-sensitive detector is used in the technique of reflection detection. m can exhibit > ^ a. This type of position-sensitive X-ray inspection ^ car trains generally include multiple detector elements that are renewed by c c D or other scanning mechanisms. Each element # g borrow / μ ^ ”is called to be invented. Φ .., m LL,, 711 accumulate the photoelectricity in a period of time before it is out, and therefore cannot resolve the incident XRR of the photon array Only one dagger or a few daggers of ancient incidental specimens are recorded, and the incident incidents are recorded in the total volume of the mother and one piece. Only a different monochromator is used between the sample and the inspector π, where to go ^ soap column, ^ here j different, but this configuration causes the signal throughput to be too low for practical applications. = The counter is a type of gas-based position-sensitive [photodetector: it provides some energy resolution '-typically about 20% (for a 6 kilovolt line for 1 200 electron volts). However, these counters can only process one photon at a time, resulting in a very slow analysis rate. For many applications, its energy resolution is not sufficient. For example, in the Journal of Applied Crystallography 22 (1989), page 46 0 'The name of Chihab et al. Is nNew Apparatus for Grazing X-ray Ref 1ectometry in the Angle-Resolved Page 6 C: \ 2D-CODE \ 90- 06 \ 90106732.ptd 1225760

D1SperS^e M〇^ei|,經予參考併入本案之論文,說明p 反射測里術測$之另一常見方法。一 射朝向樣本之表面,及一相反於[光工源=;;= 射之X-光。將一刀刃置於於靠近樣本表 : 切斷’以便僅反射之X-光到達檢測器。一盘X = ΓΛ非/源Λ樣本間,如在美國專利第5, 619, 548號t 早色儀’ k擇將仃到達檢測器之反射x_光束之波長。 X-光反射測量術曾與χ_光螢光(XRF)之測量合併,以 供關於薄膜層之組成之另外資訊。例如,在h X-ray Analysis 3 5 ( 1 9 92 年),127 頁,名稱為"x_ray Reflection » a New Tool for Investlgat,ng Layered Structure and Interfaces",經予參考併入本案之D1SperS ^ e M〇 ^ ei |, which is incorporated into this case by reference, illustrates another common method of p-reflection measurement. One is directed towards the surface of the sample, and the other is opposite to the [optical source = ;; = X-ray emitted. Place a blade near the sample table: Cut off 'so that only the reflected X-rays reach the detector. A disc X = ΓΛ between non-source Λ samples, such as in US Patent No. 5,619, 548 t Early color meter 'k selects the wavelength of the reflected x_beam that will reach the detector. X-ray reflectometry has been combined with X-ray fluorescence (XRF) measurements to provide additional information about the composition of the thin film layer. For example, in h X-ray Analysis 3 5 (1989), page 127, the name is " x_ray Reflection »a New Tool for Investlgat, ng Layered Structure and Interfaces ", which is incorporated by reference into this case.

Lengeler之論文,說明一種供測量掠入射χ—光反射之系統 ’其中也測量X-光螢光。一樣本由_χ—光源在掠入射予以 輻照。一 X-光檢測器截留自樣本之表面所反射之乂—光(同 樣在掠入射),同時另一在樣本上面之檢測器截留樣本由 於被X-光源激勵所發射之X-光螢光。如在此論文中所說明 ,刀析樣本在一角度低於供入射X -光之總外部反射之臨界 角度予以激勵時所發射之螢光,在該項技藝稱為總反射[ 光螢光(TXRF)分析。 在 X-ray Spectrometry 2 6 ( 1 9 9 7 年),U5 頁,名稱為 "Applications of Glancing Incidence X-ray Analysis” ,經予參考併入本案之Leenaers等人之論文, 說明一種相關技術。作者說明一種掃掠入射χ—光分析Lengeler's thesis describes a system for measuring grazing incidence χ-light reflections, among which X-ray fluorescence is also measured. A sample is irradiated by the _χ—light source at grazing incidence. An X-ray detector intercepts the radon-light reflected from the surface of the sample (also at grazing incidence), while another detector above the sample intercepts the X-ray fluorescence emitted by the sample by being excited by the X-light source. As explained in this paper, the fluorescent light emitted when the knife analysis sample is excited at an angle lower than the critical angle for the total external reflection of incident X-rays is called total reflection in this technique. TXRF) analysis. In X-ray Spectrometry 26 (1979), page U5, entitled "Applications of Glancing Incidence X-ray Analysis", a paper by Leenaers et al., Incorporated by reference, illustrates a related technique. Author states a sweeping incidence χ-light analysis

12257601225760

= ΙΧΑ),結合X-光反射率及角度相依χ_光螢光測量,以獲 付樣本之結構及化學分析之方法。 在Applied Surface SCience 1 2 5 ( 1 998 年),129頁,名 稱為"Characterization 〇f Titanium Nitride Uyas by Grazing-Emission X-ray Fluorescence= ΙΑΑ), combined with X-ray reflectance and angle-dependent χ_photofluorescence measurement to obtain the structure and chemical analysis method of the sample. In Applied Surface SCience 1 2 5 (1998), page 129, named " Characterization 〇f Titanium Nitride Uyas by Grazing-Emission X-ray Fluorescence

Spectrometry”,經予參考併入本案之Wiener等人之論文 ,說明一種供確定薄膜層之厚度及組成之替代性方法。此 =文說明一種技術,從而樣本藉光源在正常或近乎正 苇入射予以輕照,並且樣本所發射之螢光X —光光子在一 掠射角,靠近表面予以收集。如在該項技藝所知,所收集 光子之光譜藉一種波長分散之技術予以分析,並且也確定 光子藉發射角之分佈。所獲得之資料提供關於在樣本之薄 膜層之厚度及組成之資訊。 能1分散技術也可用以分析反射光子之光譜分佈,如例 如在Windover 等人於47th Annual Denver X-ray Conference ( 1 9 98 年8 月)所提出,名稱為”丁 hin Film Density Determination by Multiple Radiation Energy Dispersive X-ray Reflectivity” ,經予參考併入本案之 論文中所說明。 人們曾發展成功供使用在成像系統,依據同步加速器輻 射,具有專用處理電路,供每一檢測器之X—光檢測器陣列 。此等陣列係由Arfelli等人,在Nuclear Instruments and Methods in Physics Research A 377(1996 年),5〇8 頁,在名稱為’’New Developments in the Field of"Spectrometry", a paper by Wiener et al. Incorporated by reference, illustrates an alternative method for determining the thickness and composition of thin film layers. This article describes a technique whereby a sample can be applied by a light source at normal or near normal incidence Light, and the X-ray photons emitted by the sample are collected at a grazing angle near the surface. As is known in the art, the spectrum of the collected photons is analyzed by a wavelength dispersion technique and is also determined The distribution of photons by the emission angle. The obtained information provides information about the thickness and composition of the thin film layer in the sample. The dispersion technique can also be used to analyze the spectral distribution of reflected photons, such as in the 47th Annual Denver X by Windover et al. -ray Conference (August 1998), named "Din hin Film Density Determination by Multiple Radiation Energy Dispersive X-ray Reflectivity", described in the paper incorporated by reference. People have successfully developed Used in imaging system, according to synchrotron radiation, with special processing circuit for each detector X-ray detector arrays. These arrays were developed by Arfelli et al., Nuclear Instruments and Methods in Physics Research A 377 (1996), page 508, under the name ‘’ New Developments in the Field of

C:\2D-CODE\90-06\90106732.ptd 第8頁 1225760 五、發明說明(5)C: \ 2D-CODE \ 90-06 \ 90106732.ptd Page 8 1225760 V. Description of the invention (5)

Silicon Detectors for Digital Radiography”,及在 Nuclear Instruments and Methods in PhysicsSilicon Detectors for Digital Radiography ", and at Nuclear Instruments and Methods in Physics

Research A 38 5 ( 1 9 97 年),311 頁在名稱為” Design andResearch A 38 5 (1989), page 311 under the name "Design and

Evaluation of AC-Coupled FOXFET-Biased ^ ,Edge-on^Evaluation of AC-Coupled FOXFET-Biased ^, Edge-on ^

Silicon Strip Detectors for X-ray Imaging",經予參 考併入本案之論文中所說明。在陣列中之檢測器由一供多 通道計數,包括一預放大器,整形器,緩衝器,辨別器及 ,數器,供每一通道之VLSI(超大型積體)CMOS(互補金屬 體)€路予以讀取°檢測器陣列晶片藉金屬線 f。予以連接至VLSI輸入,不過作者陳述一種未來之重| 设計可使得可能將前端電路直接安裝/ 曼明之概述 衣牡柷浏态日日片本身。 本發明之一項目的,為提供用於位 進方法及裝置。 AΑ Λ先檢測之改 某些方面之一另外目的,為提供 光分析,纟指用於X—光反射測量 析之能量解析X- 。 里何刀析之改進方法及裝置 在本發明之較佳實施例,χ_光檢 ,敏感檢測器,叙合至各別信號處理通陣列之X-益包含光電二極管,如在該項技蓺、又佳為,檢測 種線性或矩陣(平面)構形。處理i道:丄二予以配置成一 各別檢測器一起形成或安果 已3積體電路,其與 ”至予其各別檢測器,作板最;:每一通道 予起形成在-單-積體電路晶片,:要=此 C:\2D-CODE\90-06\90106732.ptd 第9頁Silicon Strip Detectors for X-ray Imaging ", as described in the paper incorporated by reference. The detector in the array is counted by one for multiple channels, including a preamplifier, shaper, buffer, discriminator, and counter, for each channel VLSI (Very Large Integrated Product) CMOS (Complementary Metal Body). To read the detector array wafer by the metal line f. It should be connected to the VLSI input, but the author states a future priority | The design makes it possible to directly mount the front-end circuit / Man Ming's overview Yi Muchao state-of-the-art film. One of the items of the present invention is to provide a method and a device for positioning. AA Λ First Detection Modification One of the other purposes of some aspects is to provide light analysis by referring to the energy analysis X- for X-ray reflection measurement analysis. The improved method and device of the Li Hexian Analysis In the preferred embodiment of the present invention, the X-ray detection, the sensitive detector, and the X-rays combined to the respective signal processing arrays include photodiodes. It is also better to detect a linear or matrix (planar) configuration. Process i: Twenty-two will be configured to form a separate detector together or 3 integrated circuits, and "to their respective detectors, as the board; each channel is formed at -Single- Integrated Circuit Chip: To = This C: \ 2D-CODE \ 90-06 \ 90106732.ptd Page 9

a^576〇a ^ 576〇

並行處理個別诵洁〆丄口右> 土 Μ ώ: TZ ^ k ^號之陣列,允許以極高$ 角午析度及動態範圍,進 τ ^" $t ο ΛΥ ^ /5 ,, 仃位置敏感,能$相依X Ϊ田^:射測量術之技藝所已知,在其中$ 質甘:5衝處理通道之檢測器陣列,2法i 貝:並且僅可剛量總或平均通量。 一^ 在本發明之有此較佳垂 別器,其消除由;!::广例,處理通道包含* 通道之辨別器較户;預定範圍外之光子之用 在預定範圍内以可個別或全部- 置可由若干單獨之組件構成,安裝在一混合式 其他印刷電路 在一X-光光子 振幅指示入射光 ^通常在能量分 能量。依X-光光 能量分佈而定, 為在每一通道, &之增益,予以 選予以單獨控制 之靈敏度,同時 許高脈衝通過量 在此等較佳實 光反射率,其由 輻照。辨別器予 射擊檢測器之一 子之能量。脈衝 散X〜光信號處理 子在各別檢測器 每一通道產生一 依據時間常數之 自動或手動控制 ’俾增加在其有 減低具有高入射 施例之一,陣列 一 X-光束在一既 以設定為僅接受 時,產生一電脈 由各別通道予以 之技藝所知,確 之入射率,及入 輸出。通道之靈 調整,及一脈衝 。在每一通道之 相對低入射率光 率之通道之靈敏 起調整 用以檢測來自一 $實際單色能量 φ #所反射光子 晶片載體 衝,有一 處理,俾 定光子之 射光子之 敏度一般 整形濾波 靈敏度任 子之通道4 度,俾允 率,能量 光光子計 重檢測器 成此等品 量水準辨 衝。所有 便僅計數. 樣本之X -水準予以 之脈衝,Parallel processing of individual recitations of Jiejikou > Tu M: The array of TZ ^ k ^ allows τ ^ " $ t ο ΛΥ / 5 ,, with extremely high angle resolution and dynamic range.仃 Position sensitive, able to depend on each other X Ϊ ^: known in the art of radiometry, in which $ qualitative: 5 arrays of detector channels for processing, 2 methods i: only total or average the amount. ^ In the present invention, there is such a preferred discriminator, which eliminates the reason;! :: a wide example, the processing channel contains * channel discriminators compared to households; the use of photons outside the predetermined range can be individual or individual The all-position can be composed of several separate components, installed in a hybrid other printed circuit at an X-ray photon amplitude indicating the incident light ^ usually in energy divided energy. According to the energy distribution of X-ray light, for each channel, the gain of & is selected to control the sensitivity separately, and at the same time, the high pulse throughput is preferred. The light reflectance is better, which is irradiated. The discriminator gives the energy of one of the shooting detectors. The pulsed X-ray optical signal processor generates an automatic or manual control based on the time constant on each channel of the respective detector. When set to receive only, the art of generating an electrical pulse is known by the respective channels, the exact incident rate, and the input and output. Channel spirit adjustment, and a pulse. In each channel, the sensitivity of the channel with a relatively low incidence rate photometric adjustment is used to detect the actual monochromatic energy φ # reflected from the photon wafer carrier punch. There is a process to determine the sensitivity of the photons emitted by the photon. The filter sensitivity is 4 degrees, the allowable rate, and the energy photon weight detector are all such a standard. All are counted only. X-level pulses of the sample,

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1225760 五、發明說明(7) = ”榮光處理之能量偏移光子。使用陣列 ,同時免除需要=量作成準確之反射率測量 根據本發明之一 ‘ .η束之遽波或單色化。 樣本之裝置,包括 ““列,因此提供用於[光分析 一輻照樣本之X—光源;以及 一X-光檢測器裝置,其響應輻照 ,該裝置包括: 文叹木目樣本之X-先 -陣列之輻射敏感檢測器,其響應 子而產生電信號;以及 町牡/、上之輻射光 :包括許多信號處理通道,各輕合至來自-各 乂 :ΐί理信?虎,俾依光子在各別檢測器之入射率, 及依入射光子之能量分佈而產生一輸出。 ”器之陣列包括一陣;;之輻 最佳為矽二極管檢測器。 、從吕 =為,許多信號處理通道各包括—積 一有各別檢測器之共同基板。最佳為,丘 導體晶片’包括屬於很多信號處理通道:積體括-丰 在-種較佳實施w,信?虎處理通道根據可調整處理來數 處理信號,其任選響應在各別檢測哭 " ( 予以個別調整。 < 九子之不同入射率 較佳為,㈣處,道包括㈣器,其 定能量範圍外之光子之信號,其中處理 制電路,其調整辨別器之預定能量範圍。^喂&1225760 V. Description of the invention (7) = "Energy-shifted photons processed by glory. Use arrays while eliminating the need for = accurate measurement of reflectance to make an accurate reflectance measurement according to one of the invention '. Η beam chirping or monochromation. Sample The device includes a "" column, and therefore provides an X-light source for [light analysis of an irradiated sample; and an X-ray detector device, which responds to the irradiation, the device includes: -An array of radiation-sensitive detectors that generate electrical signals in response to the photons; and radiant light on the top / bottom: including a number of signal processing channels, each of which is light-to-synthetic: each of the following: a letter, a tiger, and a photon The incident rate of each detector and an output are generated according to the energy distribution of the incident photons. "The array of detectors includes an array; the radiation is preferably a silicon diode detector. From Lv =, many signal processing channels each include-a common substrate with separate detectors. It is best that the mound conductor chip 'includes many signal processing channels: integrated,-abundant in-a kind of preferred implementation w, the letter? Tiger processing channel processes signals according to adjustable processing, and its optional response is detected separately Cry " (to be adjusted individually. ≪ The different incidence rates of the nine sons are preferably, where, the channel includes the artifact, the signal of the photon outside its constant energy range, where the processing circuit adjusts the predetermined energy of the discriminator Range. ^ Hey &

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第11頁 1ZZ3 /ου 五、發明說明(8) 較佳為,信號處 士+奴λ 4丄丄 題道包括計 计數入射在各別檢測器之光子數 為很多通道所ϋ有 光子計數。有之匯流排’其 之C例,X-光檢測 土兔,Y JL 或另外,樣 仏為,X-光源包括—單 ^ ^ ^ ^ 早色儀’因 i ::此量予以輻照。最佳為 :星μ Γ周整以剔除對應於在 一之預定能量之信號。 之一種較佳實施例 析樣本之方法,包括: 以X-光輻照樣本; 響應輕照’在一陣列之檢測器 來自樣本之X-光,該等檢測器響 而產生電信號;以及 在各別處理通道處理來自檢測 輸出,指示入射在各別位置,並 定之光子到達率。 根據本發明之一種較佳實施例 包括: 一陣列之輻射敏感檢測器,其 子而產生電信號;以及 處理電路包括: 數器,其響應光子之能量 ’以及處理電路,包括一 復自通道接收及輸出各別 器裝置换收自樣本所反射 本所發射之螢光X-光。較 而樣本被以實際單色X-光 ,信號處理通道包括辨別 一能量範圍外之光子,包 ’也提供一種用於X-光分 在各別預定位置,接收 應入射在其上之X-光光子 器陣列之信號,俾產生一 依入射光子之能量分佈而 ’另外提供輻射檢測褒置 響應入射在其上之輻射光Page 11 1ZZ3 / ου 5. Description of the invention (8) Preferably, the signal clerk + slave λ 4 丄 丄 title includes counting and counting the number of photons incident on the respective detectors, which is the number of photons counted by many channels. There are some busbars ', such as C examples, X-ray detection, Hare, Y JL, or other. For example, the X-light source includes-single ^ ^ ^ ^ early color meter' because of i :: this amount is irradiated. The best is: Star μ Γ round to eliminate the signal corresponding to a predetermined energy at one. A preferred embodiment of a method for analyzing a sample includes: irradiating the sample with X-rays; responding to the light-emitting detectors in an array of X-rays from the samples, and the detectors generate electrical signals when the detectors respond; and Each processing channel process comes from the detection output, indicates the incident photon at each position, and sets the photon arrival rate. A preferred embodiment according to the present invention includes: an array of radiation-sensitive detectors that generate electrical signals; and a processing circuit including: a counter that responds to the energy of a photon 'and a processing circuit including a complex self-channel receiver And outputting the respective device to receive the fluorescent X-ray emitted from the sample reflected by the sample. In contrast, the sample is treated with actual monochromatic X-rays. The signal processing channel includes identifying photons outside an energy range. The package also provides a way for X-rays to be separated at predetermined locations and receive X-rays that should be incident on them. The signal from the photon photon array generates a 'light detection device' in response to the energy distribution of the incident photons in response to the incident radiation.

1225760 五、發明說明(9) 5 ζ ^ =處理通道,每一通道_合至來自一各別檢測器 之^ i ^犰,並包括一計數器,其計數入射在各別檢測器 之光子數;以及 為很夕通逼所共有之匯流排,其復自通道接收並輸出 各別光子計數。 自其車乂 it«貝施例之下列詳細說明,連同附圖,將會更完 全瞭解本發明,在附圖中: 毯佳貫施例說明 圖1為一種根據本發明之較佳實施例,用於一樣本2 2之 X-光反^測量術之系統20之示意圖。一χ_光源24,一般為 一 X-光官’經由一聚焦單色儀26,輻照一在樣本22之小區 域2 8袁仏為’單色儀2 6包含一種由M i c h i g a η州T r 〇 y 〇31^1。111(:.所供應之]^1"}^&1:1^〇1^-3362型裝置,或一由1225760 V. Description of the invention (9) 5 ζ ^ = processing channel, each channel is combined to the ^ i ^ arm from a respective detector, and includes a counter that counts the number of photons incident on the respective detector; As well as the bus common to the Xixi Tongtong, it receives and outputs individual photon counts from the channel. From the following detailed description of its car example, together with the accompanying drawings, the present invention will be more fully understood. In the drawings: blanket description of the embodiment Figure 1 is a preferred embodiment according to the present invention, Schematic diagram of a system 20 for X-ray reflectometry of the same type. A χ_light source 24, generally an X-ray light, irradiates a small area 2 of the sample 22 via a focusing monochromator 26 8 Yuan Xuan is a monochromator 2 6 containing r 〇y 〇31 ^ 1. 111 (:. Supplied) ^ 1 "} ^ & 1: 1 ^ 〇1 ^ -3362 type device, or one by

New York 州Albany, X〇S(X-ray optical System) Inc· 所衣 ie 之X ray Doubly-bent Focusing Crystal Optic 。此等單色儀在同一日期所提出,讓渡予本專利申請案之 受讓人’並且其揭示經予參考併入本案,名稱為"x-ray Microanalysis of Thin Film"之專利申請案,有更詳細 說明。要不然’可使用任何其他適當單色儀,諸如在上述 美國專利第5, 6 1 9, 548號及第5, 923, 72 0號中所說明者,也 可使用在Chi hab等人之上述論文中所說明之刃型配置。在 系統2 0中供反射測量術測量之一種代表性輕照能量約為 5. 4千電子伏。 樣本2 2所反射之X -光,藉一陣列3 0之檢測器3 2予以收集X-ray (X-ray optical System) Inc. coat, Albany, New York, X-ray Doubly-bent Focusing Crystal Optic. These monochromators were filed on the same date, assigned to the assignee of this patent application ', and their disclosures are incorporated by reference into this patent application, entitled "x-ray Microanalysis of Thin Film", There are more details. Otherwise 'any other suitable monochromator may be used, such as those described in the aforementioned U.S. Patent Nos. 5, 6 1 9, 548 and 5, 923, 72 0, as described above by Chi hab et al. The blade configuration described in the paper. A typical light energy for reflection measurement in System 20 is about 5.4 kiloelectron volts. X-rays reflected by sample 2 2 are collected by detector 3 2 of an array 30

C:\2D-C0DE\90-06\90106732.ptd 第13頁 1225760 五、發明說明(10) ,_合至處理電路34,t含許?處理通道36 ^ D自一對應檢測器32接收信號。 ,在圖1中檑+ Μ 床…、、馮例不簡明起見 測器,二本V明早二列之檢測器32,而有相對少數之檢 列3〇通常=2佳實施例,如在下文另外說明,陣 列,以件’設置成線性或矩陣(平面)陣 號,較:為1ί:: ΐ 36。來自通道36之輸出信 形式’予以傳送至一處理 塊38, 顯亍當規劃程式之通用電腦1予以耗合至- 光Si析通,之輸出,俾較佳為確定自樣本22所反射 之liΓ為在:既定能量或在-能量範圍之角度 摆w # 口、,下文另外'兒明’由於在信號處理提供能量選 随卿稭通這36之能量分散處理,免除在樣本22與檢測器 ^ _之間需要一另外單色儀。樣本22在區域28有一層或 夕層溥表面層諸如薄膜時,分佈42 一般由於在反射之x—光 波當中來自諸層間之介面之干擾效應,而呈現一種週期性 結構。週期性結構之特徵較佳為藉塊38予以分析,俾使用 例如在上述美國專利第5, 6 1 9, 548號及第5, 74〇, 226號中所 說明,或否則如在該項技藝所已知之分析方法,確定有— 層或多層表面層之厚度,密度及表面品質。 雖然在圖1中所示之較佳實施例,包括陣列3 〇及附帶電 路3 4之系統2 0,係參照X -光反射測量術予以說明,但請予 察知’系統作必要更改,可同樣使用於X —光分析之其他領 域。可能之應用領域包括X-光螢光(XRF)分析,特別是如、 C:\2D-CODE\90-06\90106732.ptd 第14頁C: \ 2D-C0DE \ 90-06 \ 90106732.ptd Page 13 1225760 V. Description of the invention (10), _ combined to the processing circuit 34, what is t? The processing channel 36 ^ D receives a signal from a corresponding detector 32. In Figure 1, 檑 + Μ bed ..., Feng example is not a concise detector, two copies of the detector 32 in the next two tomorrow morning, and a relatively small number of detectors 30, usually = 2 best embodiment, as in As explained below, the array is set to a linear or matrix (planar) array number with pieces', which is: 1ί :: ΐ 36. The output letter form 'from the channel 36' is transmitted to a processing block 38, which shows that when the general-purpose computer 1 of the planning program is consumed, the output of the optical Si analysis pass is preferably determined as liΓ reflected from the sample 22. In order to set the angle of the predetermined energy or in the-energy range, w # 口, and the other "Er Ming" below, because of the energy provided in the signal processing, the 36 energy dispersive processing is selected to eliminate the sample 22 and the detector ^ _ An additional monochromator is needed in between. When the sample 22 has a layer or a surface layer such as a thin film in the area 28, the distribution 42 generally exhibits a periodic structure due to the interference effect from the interfaces between the layers in the reflected x-ray wave. The characteristics of the periodic structure are preferably analyzed by block 38, using, for example, those described in the aforementioned U.S. Patent Nos. 5, 6 1 9, 548 and 5, 74, 226, or otherwise as described in the art Known analytical methods determine the thickness, density, and surface quality of one or more surface layers. Although the preferred embodiment shown in FIG. 1 includes a system 20 including an array 30 and an attached circuit 34, which has been described with reference to X-ray reflectometry, please be aware that the system can be modified as necessary. Used in other areas of X-ray analysis. Possible application fields include X-ray fluorescence (XRF) analysis, especially such as, C: \ 2D-CODE \ 90-06 \ 90106732.ptd page 14

/ου 五、發明說明(Η) :發明之背景所說明,包括在 XRF,以及其他w技術。再者,系^n f =之知射發射 ’諸如供檢測伽瑪射線及其在供其他 感檢測系統予以實施。 才乂射之位置敏 圖2為方塊圖,其略示根據本發明 陣列30及處理雷收认、, f乂彳土 κ知例之檢測器 ”理電路34。檢測器32較佳為包 有-耗盡厚度至少為20微米。,匕 ΙΝ -才“ 並可與電路34整合在—共同嫩之優,么要2本低’ 用在该:技藝所知之任何其他適當類型檢測器,:’可使 …包含對應之處理通道36。陣列3。及電路3片4 = : i 二P下較佳為藉一熱電冷卻器’以改進其信 二予: 。在下文麥照圖3說明通道36之細節。 Μ生月b 置陣檢測器32 ’沿陣列之線性軸線配 置八有軸向尺寸約略為30微米,及橫向尺寸 。此等尺寸使陣列具有作用面積約為15“毫米為6】2,未 3:1 二Γ Ϊ:則器之窄軸向間距增強在使用陣列30測 里,:7達,角析度’ @時寬橫向尺寸可使用於使檢 測之靈敏度最大,因此增加系統2〇 iXRR測量通過量。然 而丄請予瞭解,檢測器之此等尺寸及數目,在此處係予、引 述思在作為實例,並且可使用任何適當類型,尺 之檢測器。 替代在圖2中所示之線性陣列,撿測器32可予以替代性 配置在一平面矩陣陣列。如果希望,此種陣列具有提供平 C:\2D-CODE\90-06\90106732.ptd 第15頁 五、發明說明(12) 面角解析度之優點。如果需 出在諸列陣列之每一列;::::,度’可將信號輪 素大小具有至少二可能】i.t/;:免;:;形之相對小像 之飽和,·以及(2)減少檢測器之電免,角又/現-χ-光通量 測雜訊之減低。 /、可¥致在總體檢 至X-測器=於::性陣列3° :以限制暴露 及在軸向方向,希望細微之角解口声如^在橫向方向,以 使光L :動俾望光之面積之橫向尺寸。可 ,以將X-光截留在不置將在:重:; ^所構成’母一切口對應於檢測器32之-之光罩,可在 以移,以增強在軸向方向之檢測解析度。再 im之射在陣列3〇為在軸向方向之角度之函數 =具r有刻”橫向尺寸,…高二位之二 : 較之在低通買部位者,有較小之作用面積暴露至X- 光。此種構形減少在高通量部位之飽和之可能性,並有效 增加陣列之動態範圍。 衝 ,、/、口口 · 厂/j 千刖卬OJA 產生一脈衝有一振幅指示入射光子之能量。較佳為, 、圖3為方塊圖,其略示根據本發明較佳實施例之處理通 道3 6之一。對應檢測裔3 2所輸出之信號首先藉一電荷敏感 預放大器70,一般為一低雜訊fet放大器予以放大,一脈 整形;慮波态7 2修勻及整形預放大器7 q所輸出之信號,俾 增/ ου 5. Description of the invention (Η): Description of the background of the invention, including XRF, and other technologies. Furthermore, the system is known to emit radiation, such as for detecting gamma rays and its implementation in other sensing detection systems. Figure 2 is a block diagram showing the position sensitivity of the array 30 according to the present invention. The array circuit 30 and the detector 30 for processing the lightning detection method are described in detail. The detector 32 preferably includes -The depletion thickness is at least 20 microns. It can be integrated with the circuit 34-the best of both worlds, why it is 2 low's used in this: any other suitable type of detector known to the art, 'Make ... contain the corresponding processing channel 36. Array 3. And circuit 3 pieces 4 =: i Two P is preferably borrowed a thermoelectric cooler ’to improve its letter. Details of the channel 36 are described below with reference to FIG. 3. The M-b-b array detector 32 'is arranged along the linear axis of the array, with an axial dimension of approximately 30 microns and a lateral dimension. These dimensions make the array have an effective area of about 15 "millimeters are 6" 2, not 3: 1 2 Γ 则: the narrow axial distance of the device is enhanced in 30 measurements using the array: 7 up to the angle resolution '@ The time width and horizontal size can be used to maximize the sensitivity of the detection, so the system's 20iXRR measurement throughput is increased. However, please understand that these sizes and numbers of detectors are given here and cited as examples, And any suitable type of ruler detector can be used. Instead of the linear array shown in Figure 2, the detector 32 can be alternatively arranged in a planar matrix array. If desired, this array has a flat C: \ 2D-CODE \ 90-06 \ 90106732.ptd Page 15 V. Description of the invention (12) The advantages of face angle resolution. If it is required to appear in each column of the array of columns; ::::, the degree can be used to turn the signal wheel The prime size has at least two possibilities] it / ;: free;:; the saturation of the relatively small image, and (2) the reduction of the electrical immunity of the detector, and the reduction of the angle / present-χ-flux measurement noise. Can be detected in the overall X-detector = at :: sex array 3 °: to limit exposure and on axis Direction, hope that the subtle corners of the mouth are like ^ in the horizontal direction, so that the light L: the horizontal size of the area where the light is observed. Yes, to intercept the X-rays without placing them in: heavy :; ^ constituted by ' The aperture of the mother corresponds to the-of the detector 32, which can be moved to enhance the detection resolution in the axial direction. The im shot in the array 30 is a function of the angle in the axial direction = with r "Engraved" horizontal size,… higher two: has a smaller active area exposed to X-rays than those bought at low-pass sites. This configuration reduces the possibility of saturation at high-throughput sites and effectively increases the dynamic range of the array. Impulse ,,,, mouth · Plant / j 千 刖 卬 OJA generates a pulse with an amplitude indicating the energy of the incident photon. Preferably, FIG. 3 is a block diagram, which schematically shows one of the processing channels 36 according to the preferred embodiment of the present invention. The signal corresponding to the detection source 32 is first borrowed by a charge-sensitive preamplifier 70, which is generally a low-noise fet amplifier to amplify, and a pulse is shaped; consider the wave state 7 2 to smooth and shape the signal output from the preamplifier 7 q Increase

C:\2D-roDE\90-06\90106732.ptd 第16頁 1225760 五、發明說明(13) 整形控制電路73(為例示簡明起見,在圖2中未示)提 t、適當控制輸入至預放大器7〇及濾波器72。 車乂锃為,濾波器72所施加之修勻程度,依據檢測器所遭 I之脈衝率,亦即響應入射在陣列30之X-光光子之通量予 以,整。調整用以增加在其中有相對低光子入射率之通道 敏度,同時減低具有高入射率之通道之靈敏度,俾允 ^ =脈衝计數通過量。一般為,如通道之脈衝整形時間所 石定,湓敏度予以設定為致使通道3 6可適應至少1 · 5 X工Μ f衝/心每一通道或一組通道之靈敏度任選為可個別調 ^。依據類似組件之使用及在習知能量分散處理系統之設 汁,精於此項技藝者將會明白,供通道36之組件及設計參 數之適當選擇。 / 較佳為將一水準辨別器7 4應用於脈衝整形器7 2 俾選擇-範圍之能量予以傳至1—位元計數電路^。較 =為,依一通過其讀出計數之匯流排6〇之寬度,及依連續 項出間之整合時間而定,每一計數器電路7 6能整合至多 1 〇8光子計數。辨別器74之範圍藉一能量臨限控制^52 |以 選擇,因而僅選擇在選定能量範圍之光子。較佳為,選擇 〇一3共千同Λ量Λ圍供所有通道36 ’而有一能量通帶不超=約 υ· d干電子伏寬。除了剔除在所選擇通帶外之光子外,設 定在辨別器74之上限,也由於脈衝堆疊而消除亂真俨號成 亦即在二光子在幾乎相同時間到達時,產生高振幅二:。 陣列30及電路34所提供之能量辨別,特別可用以^ Γ自 樣本22所反射X-光之角分佈。其允許自其波長由於螢^發C: \ 2D-roDE \ 90-06 \ 90106732.ptd Page 16 1225760 V. Description of the invention (13) The shaping control circuit 73 (for the sake of brevity and simplicity, not shown in Figure 2) provides t, appropriate control input to Pre-amplifier 70 and filter 72. It is determined that the degree of smoothing applied by the filter 72 is adjusted in accordance with the pulse rate of I experienced by the detector, that is, in response to the flux of X-ray photons incident on the array 30. The adjustment is used to increase the sensitivity of the channel with a relatively low photon incidence rate, while reducing the sensitivity of a channel with a high incidence rate, and allow ^ = pulse count throughput. Generally, as determined by the pulse shaping time of the channel, the sensitivity of the channel is set so that the channel 36 can adapt to at least 1,5 × work frequency f. The sensitivity of each channel or group of channels can be individually selected. Tweak ^. Based on the use of similar components and the design of conventional energy dispersion processing systems, those skilled in the art will understand that the components and design parameters for the channel 36 are appropriately selected. / Preferably, the one-level discriminator 7 4 is applied to the pulse shaper 7 2. The energy of the selection-range is transmitted to the 1-bit counting circuit ^. For comparison, each counter circuit 76 can integrate up to 108 photon counts depending on the width of the bus 60 through which it reads and the integration time between successive entries. The range of the discriminator 74 is selected by an energy threshold control ^ 52 |, so only the photons in the selected energy range are selected. Preferably, a total of 3,000 and Λ quantities Λ are selected for all channels 36 ′ and there is an energy passband not exceeding about ν · d dry electron volt width. In addition to excluding photons outside the selected passband, the upper limit set at the discriminator 74 is also eliminated due to pulse stacking, that is, when two photons arrive at almost the same time, a high amplitude two is generated. The energy discrimination provided by the array 30 and the circuit 34 is particularly useful for the angular distribution of X-rays reflected from the sample 22 by Γ. It allows emission from its wavelength due to fluorescence

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1225760 五、發明說明(14) 射過程而偏移之光子,區別反射之[光光子(其且 =、來自源24之入射光子相同 際單樣^ =檢測器陣列30之間無需一另外之單色儀。)此能在量樣本 此力可同樣用於區別特定[光螢光線或散射過渡。別 要不$ ’選擇不同能量供在不同通道3 6之 二”:代性或另外’在所考慮之若干不同能== 月品限。而且,雖然通道36在圖3示為僅包括一單一;f 包括多重,並行計數;代性貫施例’通道可 等實施你卜並行計數::^^^^^別^在此 T裂°σ 5十數在右干不同能量水準同時A h 在對應檢測3 2之x -光光子之數。 、、 現請回至圖2,觀察到集體進行某些 整彻之處理通道36。一高壓偏壓電= -為所有檢測器所共有之偏壓電壓。自限控制電路 為設定能量水準辨別範圍供所有通道(雖然如在上文土 及’也可設定不同範圍供不同通道)。計數器76之卜位元 計數輸出予以輸出至共同匯流排60,供在一 54之控制下,順序傳送至處理及分析塊38。匯流排控= 復根,一晶片重設及控制電路56所提供之信號,並利用二 計數器位址匯流排電路58之位址選擇,自每一通道36枝 計數U排定址可順序或藉隨機存取讀取通道36。 此項技i者將會明白此等電路之設計。電路58可任選予以 規劃程式及控制,俾提供一相對較長整 子通量為相對低之通道。 ^ I/、中先 C:\2D-C0DE\90-06\90106732.ptd 第18頁 1225760 五、發明說明(15) 每一檢測器3 2 為予以整合在一 陣列3 0中之所有 一石夕基板’在一 電路52 然而 可包含 合式電 要不然 混合體 多層夾 路34構 ,供整 本發明 因此 在作為 所限制 ,54 , 56 ,也可能 一在ί夕基 路,在一 ,若干單 。此等積 層配置, 成整個陣 合陣列3 0 之範圍以 請予察知 實例,並 t對應通道36構成一通道單元48, 單一基板。最佳為,所有單元48, !測=及在電路34中之處理通道, 單一慣常積體電路晶片62 _起產生 及58也較佳為包括在晶片62上。 有其他整合模式。例如,每一通道 板之單獨積體電路,或可替代性包 陶竟或晶片载體基板上有若干積體 元4卜,可包含在一單一慣常積體 體通道單元4 8然後予以合併在一混 或替代性配置在一印刷電路板,以 列30。精於此項技藝者將能設計其 及電路34之多重通道,該等裴置均 内。 ,以上所說明之較佳實施例,係予 且本發明之完全範圍係僅受申請專 其較佳 亦即在 予以在 。控制 單元48 含一混 電路。 電路或 合式或 連同電 他裝置 視為在 弓丨述意 利範圍 元件編號之說 20 系統 22 樣本 24 X-光源 26 聚焦單色儀 28 小區域 30 陣列1225760 V. Description of the invention (14) Photons that are shifted during the emission process to distinguish reflected [photophotons (which and =, the incident photons from the source 24 are the same as each other ^ = there is no need for a separate order between the detector array 30) Colorimeter.) This energy can be used to measure the sample. This force can also be used to distinguish specific [fluorescent light or scattering transitions. Don't have to 'choose different energies for different channels 3 6 bis ": Generational or otherwise' at a number of different energies considered == monthly product limit. Also, although channel 36 is shown in Figure 3 as including only a single ; F includes multiple, parallel counting; the alternative implementation of the channel can wait for you to implement parallel counting :: ^^^^^ Don't ^ Here T crack ° σ 5 ten numbers on the right stem different energy levels at the same time A h at Corresponds to the number of x-photon photons detected 3 2. Please return to Figure 2 and observe that some complete processing channels 36 are collectively performed. A high voltage bias voltage =-a bias voltage common to all detectors Voltage. The self-limiting control circuit sets the energy level to identify the range for all channels (although as above, different ranges can also be set for different channels). The bit count output of the counter 76 is output to the common bus 60, Provided under the control of a 54 to be sequentially transmitted to the processing and analysis block 38. Bus control = double root, a chip reset and control circuit 56 provides the signal, and uses two counter addresses to address the bus circuit 58 Selection, 36 branches count U row addressing from each channel can be sequential or Random access read channel 36. Those skilled in the art will understand the design of these circuits. Circuit 58 can optionally be programmed and controlled to provide a channel with a relatively long overall flux and relatively low. ^ I / 、 Zhongxian C: \ 2D-C0DE \ 90-06 \ 90106732.ptd Page 18 1225760 V. Description of the invention (15) Each detector 32 is integrated into all the substrates in an array 30 'One circuit 52 may, however, contain a combination of electrical circuits or a hybrid multilayer sandwich circuit 34 structure, so that the present invention is limited in this way, 54, 56 may also be one on the road, one, several. This Equivalent layer configuration to form the entire array of arrays 3 0 for examples, and t corresponds to the channel 36 to form a channel unit 48, a single substrate. Optimally, all units 48,! = = In the circuit 34 For processing channels, a single conventional integrated circuit chip 62 is preferably generated and 58 is also preferably included on the chip 62. There are other integration modes. For example, a separate integrated circuit for each channel board, or an alternative ceramic or There are several integrated elements on the wafer carrier substrate 4 It can be included in a single conventional integrated channel unit 48 and then combined in a mixed or alternative arrangement on a printed circuit board to line 30. Those skilled in the art will be able to design multiple of it and circuit 34 Channels, these are all within the same range. The above-mentioned preferred embodiments are given and the full scope of the present invention is only subject to the application, which is better. That is, the control unit 48 contains a hybrid circuit. Circuit Either combined or with other electric devices is considered to be in the range of the number of components. 20 System 22 Sample 24 X-light source 26 Focusing monochromator 28 Small area 30 Array

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1225760 五、發明說明 (16) 32 檢 測 器 34 處 理 電 路 36 處 理 通 道 38 處 理 及 分 析 塊 40 顯 示 器 42 反 射 光 子 通 量 之 分 佈 48 單 元 50 壓 偏 壓 電 路 52 控 制 電 路 54 控 制 電 路 56 控 制 電 路 58 匯 流 排 電 路 60 匯 流 排 62 積 體 電 路 晶 片 70 電 敏 感 預 放 大 器 72 遽 波 器 73 增 益 及 整 形 控 制 電 路 74 水 準 辨 別 器 76 計 數 器 電 路1225760 V. Description of the invention (16) 32 Detector 34 Processing circuit 36 Processing channel 38 Processing and analysis block 40 Display 42 Reflected photon flux distribution 48 Unit 50 Voltage bias circuit 52 Control circuit 54 Control circuit 56 Control circuit 58 Confluence Bus circuit 60 Busbar 62 Integrated circuit chip 70 Sensitive preamplifier 72 Amplifier 73 Gain and shaping control circuit 74 Level detector 76 Counter circuit

C:\2D-CODE\90-06\90106732.ptd 第20頁 1225760 圖式簡單說明 圖1為一種根據本發明之較佳實施例,用於X-光反射測 量術之系統之示意圖; 圖2為示意方塊圖,例示根據本發明之較佳實施例,使 用於圖1之系統之X -光檢測裝置;以及 圖3為示意方塊圖,例示根據本發明之較佳實施例,圖2 之裝置中之信號處理通道。 a 〇C: \ 2D-CODE \ 90-06 \ 90106732.ptd Page 20 1225760 Brief description of the drawings Figure 1 is a schematic diagram of a system for X-ray reflection measurement according to a preferred embodiment of the present invention; Figure 2 FIG. 3 is a schematic block diagram illustrating an X-ray detection device used in the system of FIG. 1 according to a preferred embodiment of the present invention; and FIG. 3 is a schematic block diagram illustrating the apparatus according to a preferred embodiment of the present invention. Signal processing channel. a 〇

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Claims (1)

1225760 六、申請專利範圍 __ 就處理通道包含辨別器,其剔除 之光子之信號。 、、怎表在預定能量範圍外 9·如申請專利範圍第8項之裝置, 一臨限控制電路,其調整 其中,處理電路包含 信號處理通道包含計數器’其、一員之衣曰置,其中, 各別檢測器之光子數,並i 1 :〜先子之此®計數入射在 通道所共有之、& ^ ,, ,處理電路包含一為很多 數。 之匯流排’其復自通道接收並輸出各別光子計 Π.如申請專利範圍第】至5項中任一項 光檢測器袭置接收自樣本反射之X-光、。、八 ,5 ^ , 1 q i ±。°破置接收樣本所發射之螢光X-光。 13.如申請專利範圍第丨至5項中任一項之 1 量單色儀’因而樣本以實際單色;-光在預定能 道1包4·含如辨申Λ專利Λ圍第13項之裝置,其中,信號處理通 外,包#I 周整為剔除對應於在預定能量範圍 外匕括早色X-光之預定能量之光子之信號。 15. —種用於樣本之乂_光分析之方法,包含. 以X-光輻照樣本; 在一陣列之檢測器,在各別預定位 來自樣本之X-光,該等檢測器響應入射在其 而產生電信號,·及 、心Λ九光子 第23頁 C:\2D-CODE\90-06\90106732.ptd 1225760 六、申請專利範圍 處理在各別處理通道來自檢測器陣列之信號,俾產生一 輸出,指示入射在各別位置,並依入射光子之能量分佈而 定之光子之到達率。 1 6.如申請專利範圍第1 5項之方法,其中,處理信號包 含提供許多通道,各包含一積體電路配置在一與各別檢測 器所共有之土基板,供處理檢測器所產生之信號。 1 7.如申請專利範圍第1 5項之方法,其中,處理信號包 含根據處理參數處理信號,其為獨立可調整供不同之諸通 道。 1 8.如申請專利範圍第1 7項之方法,其中,處理信號包 含在通道響應光子在檢測器之入射率而調整處理參數。 1 9.如申請專利範圍第1 5至1 8項中任一項之方法,其中 ,處理信號包含辨別信號電平俾剔除對應於在預定能量範 圍外之光子之信號。 2 0.如申請專利範圍第1 9項之方法,其中,處理信號包 含計數在預定能量範圍内入射在每一位置之光子數。 2 1.如申請專利範圍第2 0項之方法,其中,輻照樣本包 含以實際單色X-光,在選定之能量輻照樣本,並且其中辨 別信號電平包含其剔除對應於在預定能量範圍外,包括單 色X-光之選定能量之光子之信號。 22.如申請專利範圍第1 5至1 8項中任一項之方法,其中 ,接收X -光包含接收自樣本所反射之X -光。 2 3.如申請專利範圍第1 5至1 8項中任一項之方法,其中 ,接收X-光包含接收樣本所發射之螢光X-光。1225760 6. Scope of patent application __ The processing channel contains a discriminator, which removes the photon signal. How to indicate that it is outside the predetermined energy range. 9) For the device in the scope of patent application No. 8, a threshold control circuit, which is adjusted, the processing circuit includes a signal processing channel including a counter, and the clothes of a member, where, The number of photons of each detector, and i 1: ~ The predecessor of this ® counts the number of incident & ^ ,, which are common to the channel, and the processing circuit includes one for many numbers. The busbar 'receives and outputs the respective photon meters from the channel. For example, any one of the scope of the patent application] to 5 photodetectors strike the X-rays received from the sample. , Eight, 5 ^, 1 q i ±. ° Disintegrate the fluorescent X-ray emitted from the received sample. 13. If the scope of the patent application is any one of the 1st to 5th monochromator, so the sample is the actual monochromatic;-the light in the predetermined energy channel 1 package 4 · including as claimed Λ patent Λ Wai 13 The device, in which the signal processing pass, is rounded to remove signals corresponding to photons of a predetermined energy that are outside the predetermined energy range. 15. —A method for the analysis of light in a sample, including: irradiating the sample with X-rays; detectors in an array, X-rays from the sample at predetermined positions, the detectors responding to incident light Electrical signals are generated thereon, and the heart Λ nine photons page 23 C: \ 2D-CODE \ 90-06 \ 90106732.ptd 1225760 6. Application for patent processing to process the signals from the detector array in the respective processing channels, Produces an output that indicates the arrival rate of photons incident at various locations and is determined by the energy distribution of the incident photons. 16. The method according to item 15 of the scope of patent application, wherein the processing signal includes providing a plurality of channels, each of which includes an integrated circuit configured on a soil substrate common to the respective detectors, for processing the signals generated by the detectors. signal. 1 7. The method according to item 15 of the scope of patent application, wherein processing signals includes processing signals according to processing parameters, which are independently adjustable for different channels. 18. The method according to item 17 of the scope of patent application, wherein the processing signal is included in the channel to adjust the processing parameter in response to the incident rate of photons at the detector. 19. The method according to any one of claims 15 to 18 in the scope of patent application, wherein processing the signal includes discriminating the signal level and eliminating signals corresponding to photons outside a predetermined energy range. 20. The method according to item 19 of the patent application range, wherein the processing signal includes counting the number of photons incident on each position within a predetermined energy range. 2 1. The method according to item 20 of the scope of patent application, wherein the irradiated sample comprises irradiating the sample at a selected energy with an actual monochromatic X-ray, and wherein the discriminating signal level includes its rejection corresponding to a predetermined energy Outside the range, the signal of the photon of the selected energy of the monochromatic X-ray is included. 22. The method of any one of claims 15 to 18 in the scope of patent application, wherein receiving X-rays includes receiving X-rays reflected from a sample. 2 3. The method according to any one of claims 15 to 18 in the scope of patent application, wherein receiving X-rays includes receiving fluorescent X-rays emitted by a sample. C:\2D-CODE\90-06\90106732.ptd 第24頁 1225760C: \ 2D-CODE \ 90-06 \ 90106732.ptd Page 24 1225760 六、申請專利範圍 2 4 · —種輻射檢測裝置,包含: 一陣列之輻射敏感檢測器,其響應入射在其上之輻射光 子而產生電信號;及 處理電路包含: 許多信號處理通道,每一 測器之信號,並且包含一計 為之光子數,以及 通道_合為處理來自一各別檢 數為’其計數入射在各別檢測 其復自通道接收並輸出 一為很多通道所共有之匯流排 各別光子計數。 25.入如申請專利範圍第24項之裝置,其中,信號處理通 ^ 3 =別為’其剔除對應於在預定能量範圍外之光子之 k唬,因而計數器僅計數在預定能量範圍内之光子。 人2一6、如申請專利範圍第25項之裝置,其中,處理電路包 3臨限控制電路,其調整辨別器之預定能量範圍。 27. 如申請專利範圍第24至26項中任一項之裝置,其 ,檢測器之陣列包含一陣列之輻射敏感二極管。八 28. 如申請專利範圍第27項之裝置,其中,二 矽二極管檢測器。 ㊁匕a 29·如申請專利範圍第24至26項中任一項之裝置,其 ,該許多信號處理通道各包含一積體電路,配」、中 別檢測器所共有之基板。 一人各 30·如申請專利範圍第29項之裝置,其中,共有美 含一半導體晶片,包括屬於很多信號處理通道之土板包 路。 檟體電Sixth, the scope of patent application 24. A radiation detection device comprising: an array of radiation-sensitive detectors that generates electrical signals in response to radiation photons incident thereon; and a processing circuit including: a plurality of signal processing channels, each The signal from the detector includes a number of photons counted as well as the channel_combined processing from a respective number of counters, whose counts are incident to the respective detections, which are received from the channels and output a common flow that is common to many channels. Line up individual photon counts. 25. The device as claimed in item 24 of the scope of patent application, wherein the signal processing pass ^ 3 = don't be 'its rejection corresponds to photons outside the predetermined energy range, so the counter only counts photons within the predetermined energy range . Person 2-6. The device as claimed in claim 25, wherein the processing circuit includes a threshold control circuit which adjusts the predetermined energy range of the discriminator. 27. The device of any one of claims 24 to 26, wherein the array of the detector includes an array of radiation-sensitive diodes. 8 28. If the device under the scope of patent application No. 27, which is a silicon diode detector. ㊁a 29. The device according to any one of claims 24 to 26 in the scope of patent application, wherein each of the plurality of signal processing channels includes an integrated circuit, which is provided with a substrate common to a common detector. One person each 30. For the device in the scope of patent application No. 29, among them, there is a semiconductor chip in the United States, including a clay package that belongs to many signal processing channels. Carcass C:\2D-CODE\90-06\90106732.ptdC: \ 2D-CODE \ 90-06 \ 90106732.ptd
TW090106732A 1999-09-29 2001-03-22 Apparatus and method for X-ray analysis of a sample, and radiation detection apparatus TWI225760B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI492244B (en) * 2012-07-18 2015-07-11 Hermes Microvision Inc Monochromator, charged particle beam apparatus, method for reducing energy spread of charged particle beam and method for energy-filtering particle beam
CN111596335A (en) * 2020-05-26 2020-08-28 上海仁机仪器仪表有限公司 Airborne pod radiation environment monitoring device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI492244B (en) * 2012-07-18 2015-07-11 Hermes Microvision Inc Monochromator, charged particle beam apparatus, method for reducing energy spread of charged particle beam and method for energy-filtering particle beam
CN111596335A (en) * 2020-05-26 2020-08-28 上海仁机仪器仪表有限公司 Airborne pod radiation environment monitoring device

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