TW201403834A - Micron-gap thermal photovoltaic large scale sub-micron gap method and apparatus - Google Patents

Micron-gap thermal photovoltaic large scale sub-micron gap method and apparatus Download PDF

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TW201403834A
TW201403834A TW101124014A TW101124014A TW201403834A TW 201403834 A TW201403834 A TW 201403834A TW 101124014 A TW101124014 A TW 101124014A TW 101124014 A TW101124014 A TW 101124014A TW 201403834 A TW201403834 A TW 201403834A
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thermal energy
optical technology
micron gap
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TWI604623B (en
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Eric L Brown
Robert S Dimatteo
Bruno A Nardelli
Bin Peng
Xiao Li
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Mtpv Power Corp
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract

The present invention relates to micron-gap thermal photovoltaic (MTPV) technology for the solid-state conversion of heat to electricity. The problem is forming and then maintaining the close spacing between two bodies at a sub-micron gap in order to maintain enhanced performance. While it is possible to obtain the sub-micron gap spacing, the thermal effects on the hot and cold surfaces induce cupping, warping, or deformation of the elements resulting in variations in gap spacing thereby resulting in uncontrollable variances in the power output. A major aspect of the design is to allow for intimate contact of the emitter chips to the shell inside surface, so that there is good heat transfer. The photovoltaic cells are pushed outward against the emitter chips in order to press them against the inner wall. A high temperature thermal interface material improves the heat transfer between the shell inner surface and the emitter chip.

Description

微米間隙熱光電之大型次微米間隙的方法與裝置 Method and device for large sub-micron gap of micro-gap thermal photoelectric

此申請案主張2010年2月28日提出的美國臨時申請案第61/308,972號之利益,且係以引用的方式併入本文中。 This application claims the benefit of U.S. Provisional Application No. 61/308,972, filed on Feb. 28, 2010, which is incorporated herein by reference.

本發明有關用於熱至電之固態轉換的微米間隙熱光電(MTPV)之技術。更廣泛地,本發明當其被插入高溫環境、諸如工業熔化爐時產生電功率。 The present invention relates to microgap thermal optoelectronic (MTPV) technology for thermal to electrical solid state conversion. More broadly, the present invention produces electrical power when it is inserted into a high temperature environment, such as an industrial melting furnace.

熱光電裝置(TPV)由被加熱的黑體所組成,該黑體將電磁能量越過一間隙輻射至光電裝置上,該光電裝置將輻射功率轉換成電功率。出自一已知TPV裝置區域的功率之數量被該裝置之熱的側面之溫度所限制,且大致上需要很高的溫度,對其實際使用造成障礙。相比之下,藉由減少該功率發射器及接收器間之間隙的尺寸,微米間隙熱光電(MTPV)系統允許該功率發射器及接收器間之更多功率的轉移。與傳統TPV作比較,藉由採用次微米間隙技術,用於MTPV裝置之可達成的功率密度能增加達大約一個量級。同等效果地,用於一給定之有效區域及功率密度,MTPV裝置之熱的側面上之溫度能被減少。這對於晶片上之功率、廢熱發電、及轉換器功率提供了新的應用。 A thermo-optical device (TPV) consists of a heated black body that radiates electromagnetic energy across a gap to an optoelectronic device that converts the radiated power into electrical power. The amount of power from a known TPV device area is limited by the temperature of the hot side of the device and generally requires a very high temperature, which creates an obstacle to its actual use. In contrast, by reducing the size of the gap between the power transmitter and the receiver, a micro-gap thermoelectric (MTPV) system allows for more power transfer between the power transmitter and receiver. Compared to conventional TPVs, the achievable power density for MTPV devices can be increased by about an order of magnitude by employing sub-micron gap technology. Equally effective, for a given effective area and power density, the temperature on the hot side of the MTPV device can be reduced. This provides new applications for power on the wafer, cogeneration, and converter power.

由於近場之逐漸消失的耦合,其已被顯示熱的本體及冷的本體間之電磁能量轉移為該等本體的接近間距之函 數。如此,該等本體越接近、大約一微米及更低,則該功率轉移越大。用於0.1微米的間隙間距,可觀察到能量轉移因子的比率增加五甚至更高。 Due to the gradual disappearance of the near-field coupling, it has been shown that the electromagnetic energy between the hot body and the cold body is transferred to the close spacing of the bodies. number. As such, the closer the bodies are, approximately one micron and lower, the greater the power transfer. For a gap spacing of 0.1 microns, it can be observed that the ratio of energy transfer factors is increased by five or even higher.

然而,該兩難困境正形成與接著將二本體間之接近間距維持在次微米間隙,以為了維持增強的性能。雖然其係可能獲得該次微米間隙間距,該等熱的及冷的表面上之熱效應誘發該等元件之凹壓、翹曲、或變形,導致間隙間距中之變化,藉此導致該功率輸出中之無法控制的變異。 However, this dilemma is forming and then maintaining the close spacing between the two bodies in the sub-micron gap in order to maintain enhanced performance. Although it is possible to obtain the sub-micron gap spacing, the thermal effects on the hot and cold surfaces induce a concave pressure, warpage, or deformation of the elements, resulting in a change in gap spacing, thereby resulting in the power output. Uncontrollable variation.

典型地,為了增加功率輸出,給予先前技藝裝置之較低的功率密度,其已需要增加該溫度。然而,溫度增加係受限於該裝置及系統零組件之材料。 Typically, in order to increase power output, the lower power density of prior art devices is given, which has been required to increase this temperature. However, the increase in temperature is limited by the materials of the device and system components.

微米間隙熱光電(MTPV)系統係一使用光電池來將熱轉換成電之潛在地更有效率的方式。微米間隙熱光電裝置係熱光電裝置之改良方法,其係“太陽能電池”技術之熱版本。兩方法利用光子來激發電子越過半導體之能帶間隙的能力,且藉此產生有用之電流。該熱源之溫度越低,則該半導體之能帶間隙必需越狹窄,以提供與光子能量之輸入光譜最佳的匹配。僅只那些具有等於或大於該能帶間隙的能量之光子能產生電。較低的能量光子可僅只產生熱,且對於效率係一損失機制。較佳的微米間隙熱光電系統將包含熱輻射或傳導至一發射器層的來源,該來源係懸置在一紅外線感測光電池的表面上方之次微米間隙。 Micro-gap thermoelectric (MTPV) systems are a potentially more efficient way to use photovoltaic cells to convert heat into electricity. The micro-gap thermo-optical device is an improved method of the thermo-optical device, which is a hot version of the "solar cell" technology. Both methods utilize photons to excite the ability of electrons to cross the band gap of the semiconductor and thereby generate useful current. The lower the temperature of the heat source, the narrower the band gap of the semiconductor must be to provide the best match to the input spectrum of photon energy. Only those photons having energy equal to or greater than the band gap can generate electricity. Lower energy photons can only generate heat and are a loss mechanism for efficiency. A preferred micro-gap thermo-optical system will contain heat radiation or a source of conduction to an emitter layer suspended in a sub-micron gap above the surface of the infrared sensing photocell.

藉由在熱放射表面及光電集極之間使用次微米間隙,吾人觀察到由固體至固體之光子的轉移比具有大間隙係可 能有更增強的比率。除了僅卜朗克輻射定律之外,涉及額外之轉移機制,雖然該等光子之光譜分布係一黑體的光譜分配。然而,次微米間隙之使用暗示一真空環境被使用,以避免藉由不能激發電子進入該傳導帶的低能量光子造成越過該間隙的過度之熱傳導。為有效率地利用該熱之來源,高份額之高能量光子必需被產生。被使用於分開該放射表面與該光電池之結構在直徑中必需為小的,且用於該相同之效率考量亦必需為一非常好之熱絕緣體。該光電池大致上將必需稍微被冷卻,以致其將適當地起作用。在高溫,本質載子產生沈沒該PN接面,且其不再為電子之有效的集極。 By using a submicron gap between the heat radiating surface and the photocollector, we have observed that the transfer ratio of photons from solid to solid has a large gap. Can have a more enhanced ratio. In addition to only the Planck radiation law, an additional transfer mechanism is involved, although the spectral distribution of the photons is a black body spectral distribution. However, the use of sub-micron gaps implies that a vacuum environment is used to avoid excessive heat conduction across the gap by low energy photons that are unable to excite electrons into the conduction band. In order to efficiently utilize this source of heat, a high share of high energy photons must be produced. The structure used to separate the radiating surface from the photovoltaic cell must be small in diameter, and the same efficiency considerations must also be a very good thermal insulator. The photocell will generally need to be cooled slightly so that it will function properly. At high temperatures, the essential carrier creates a collector that sinks the PN junction and is no longer an effective electron.

微米間隙熱光電系統起作用,好像該發射器具有大於一的發射係數值。黑體之定義係其具有等於一的發射係數值,且此值不能被用於大間隙輻射能量轉移的值超過。5-10之同等發射係數因子已使用在0.30至0.10微米的區域中之間隙被實驗性地證明。 The micro-gap thermo-optical system functions as if the emitter had an emission coefficient value greater than one. Blackbody is defined as having an emission coefficient value equal to one, and this value cannot be exceeded by the value used for large-gap radiant energy transfer. The equivalent emission coefficient factors of 5-10 have been experimentally demonstrated using gaps in the region of 0.30 to 0.10 microns.

利用此現象有至少二方式。於一可比較之系統中,如果該等放射表面之溫度被保持相同,該微米間隙熱光電系統可成比例地較小及比較便宜地被製成,同時產生相同之電量。或,如果一可比較之尺寸的系統被使用,該微米間隙熱光電系統將在非常地低之溫度下運轉,藉此減少製造該系統中所使用之材料的成本。於一初步的評估中,藉由使用微米間隙技術,經計算一典型系統之操作溫度可為由攝氏1,400度減少至攝氏1,000度,且仍然產生相同之電力 輸出。由於可能的材料之更寬廣的可用性及較低的成本,溫度之此一降低能於該系統之實用性中造成差異。 There are at least two ways to take advantage of this phenomenon. In a comparable system, if the temperatures of the radiating surfaces are kept the same, the micro-gap thermo-optical system can be made proportionally smaller and less expensive, while producing the same amount of electricity. Alternatively, if a comparable size system is used, the micro-gap thermo-optical system will operate at very low temperatures, thereby reducing the cost of manufacturing the materials used in the system. In a preliminary assessment, by using the micro-gap technique, the operating temperature of a typical system can be calculated to be reduced from 1,400 degrees Celsius to 1,000 degrees Celsius, and still produce the same power. Output. This reduction in temperature can cause differences in the utility of the system due to the wider availability of possible materials and lower cost.

美國專利第7,390,962、6,232,546及6,084,173號及美國專利申請案第12/154,120、11/500,062、10/895,762、12/011,677、12/152,196及12/152,195號被以引用的方式併入本文中。 U.S. Patent Nos. 7,390,962, 6, 232, 546 and 6, 084, 173, and U.S. Patent Application Serial Nos. 12/154,120, 11/500,062, 10/895,762, 12/011,677, 12/152,196, and 12/152, 195 are incorporated herein by reference.

額外之能量轉移機制已被假設,且使用狹窄的隔熱間隙來製成系統之能力可按照本發明發現很多型式的應用之使用。 Additional energy transfer mechanisms have been hypothesized, and the ability to make systems using narrow thermal insulation gaps can be found in accordance with the present invention for many types of applications.

因此,本發明之一目的係提供一新穎的微米間隙熱光電裝置結構,其係亦更容易製造的。 Accordingly, it is an object of the present invention to provide a novel micro-gap thermo-optical device structure that is also easier to manufacture.

本發明之進一步目的係提供此一導致該發射器及該光電基板間之高度熱絕緣的微米間隙熱光電裝置。 It is a further object of the present invention to provide such a microgap thermal optoelectronic device that results in a high degree of thermal insulation between the emitter and the photovoltaic substrate.

本發明之進一步目的係提供此一能具有大面積及能夠有高產量的微米間隙熱光電裝置。 It is a further object of the present invention to provide such a microgap thermoelectric device that can have a large area and can have a high throughput.

本發明之進一步目的係提供此一允許橫側之熱膨脹的微米間隙熱光電裝置。 It is a further object of the present invention to provide such a microgap thermoelectric device that allows for thermal expansion of the lateral side.

本發明之進一步目的係提供此一有效率之微米間隙熱光電裝置。 It is a further object of the present invention to provide such an efficient micro-gap thermo-optical device.

本發明之進一步目的係提供此一具有均勻之次微米間隙的微米間隙熱光電裝置。 It is a further object of the present invention to provide such a microgap thermoelectric device having a uniform submicron gap.

本發明之進一步目的係提供此一微米間隙熱光電裝 置,該微米間隙熱光電裝置提供較大的能量轉移。 A further object of the present invention is to provide the one-micron gap thermal photoelectric device The micro-gap thermo-optical device provides greater energy transfer.

本發明之進一步目的係提供此一微米間隙熱光電裝置,該微米間隙熱光電裝置被製成,而沒有組裝多數獨立的元件。 It is a further object of the present invention to provide such a one-micron gap thermo-optical device that is fabricated without the assembly of a plurality of separate components.

本發明之進一步目的係提供一製成微米間隙光電裝置之方法。 It is a further object of the present invention to provide a method of making a micro-gap optoelectronic device.

本發明之進一步目的係提供一有用於當作熱光電系統及亦於其他應用中有用之微米間隙裝置。 It is a further object of the present invention to provide a microgap device that is useful as a thermal optoelectronic system and that is also useful in other applications.

該熱光電系統及設備當其被插入一高溫環境、諸如工業熔化爐時產生電功率。該熱光電系統由一耐熱及耐腐蝕的、真空密閉殼體,及一液體冷卻式機械總成所組成,而在該機械總成內側與該被加熱之殼體的內側壁面造成接觸。 The thermo-optical systems and devices generate electrical power when they are inserted into a high temperature environment, such as an industrial melting furnace. The thermo-optical system consists of a heat and corrosion resistant vacuum sealed housing and a liquid cooled mechanical assembly with contact with the inner side wall surface of the heated housing inside the mechanical assembly.

該機械總成有利於及提供一機構,用於達成大的發射器及光電表面間之次微米間距。熱係由該殼體的內表面傳導至光譜地控制之輻射器表面(熱的側面)。該輻射器表面以電磁能量之形式發射該熱,越過次微米間隙至光電(PV)裝置(冷的側面)。該熱的一部份藉由該光電池被轉換成電力。該熱能的其餘部份係藉由液體冷卻式、設有栓銷的、或帶散熱片的散熱器從該光電池之相反側面移去。 The mechanical assembly facilitates and provides a mechanism for achieving a sub-micron pitch between the large emitter and the photovoltaic surface. The heat is conducted from the inner surface of the housing to the spectrally controlled radiator surface (the hot side). The surface of the radiator emits this heat in the form of electromagnetic energy across the submicron gap to the photovoltaic (PV) device (cold side). A portion of this heat is converted to electricity by the photovoltaic cell. The remainder of the thermal energy is removed from the opposite side of the photovoltaic cell by a liquid cooled, pinned, or heat sink with a heat sink.

該設計的一主要態樣係允許用於該等發射器晶片之密切接觸至該殼體內側表面,以致有良好的熱傳送。該等光電池被往外推抵靠著該發射器晶片,以為了將它們壓抵靠著該內部壁面。一高溫熱介面材料改善該殼體內表面及該 發射器晶片間之熱傳送。該等發射器晶片上之微小的間隔件總是維持該熱的輻射表面及該等光電池間之次微米間隙。 A primary aspect of the design allows for intimate contact of the emitter wafers to the inside surface of the housing for good heat transfer. The photovoltaic cells are pushed outward against the emitter wafer to press them against the inner wall. a high temperature thermal interface material to improve the inner surface of the housing and the Heat transfer between transmitter wafers. The tiny spacers on the emitter wafers always maintain the hot radiating surface and the sub-micron gap between the photocells.

該機械總成被設計,以當該殼體加熱、膨脹、及翹曲時,將該等熱的及冷的晶片推抵靠著該殼體內側表面。為達成此目的,該等光電池被附接至一可變形的本體,該本體能夠配合該殼體的內側表面之形狀。該可變形的本體係一薄金屬箔材(膜片)。壓力係藉著一氣動隔膜及一以液體金屬充填的孔腔被賦予至該膜片。 The mechanical assembly is designed to urge the hot and cold wafer against the inside surface of the housing as the housing heats, expands, and warps. To achieve this, the photovoltaic cells are attached to a deformable body that is capable of engaging the shape of the inside surface of the housing. The deformable system is a thin metal foil (diaphragm). The pressure is imparted to the diaphragm by a pneumatic diaphragm and a cavity filled with liquid metal.

該液體金屬孔腔具有二目的之作用:1)賦予壓力至該膜片之背面,其依序將該等光電晶片推抵靠著該等發射器晶片,同時允許該膜片伸縮及配合該殼體內側表面之形狀:及2)將過量之熱載送遠離該光電晶片至一液體冷卻式散熱器。 The liquid metal bore serves two purposes: 1) imparting pressure to the back side of the diaphragm, which in turn urges the optoelectronic wafer against the emitter wafer while allowing the diaphragm to expand and contract and engage the shell The shape of the inner side surface of the body: and 2) the excess heat is carried away from the photovoltaic wafer to a liquid cooled heat sink.

在該殼體內側的排空之空間係幾乎完美的真空(<10-3托耳),以致熱未被越過該次微米間隙的空氣所傳導及未被傳導於暴露的殼體內側表面與該散熱器之間。 The evacuated space inside the casing is an almost perfect vacuum (<10 -3 Torr) so that heat is not conducted through the air passing through the sub-micron gap and is not conducted to the exposed inside surface of the casing and Between the radiators.

本發明係有用的,因為其由以別的方式將被浪費之熱產生電功率。該電力能被使用於對該工廠內之其他裝置供電,或其能被賣給該公用事業公司。 The invention is useful because it produces electrical power from heat that would otherwise be wasted. The power can be used to power other devices in the plant or it can be sold to the utility company.

當然,本文所揭示之本發明係可能有很多不同形式之具體實施例。在該等圖面中所顯示及下文中所詳細敘述者係本發明之較佳具體實施例。然而,其將被了解,本揭示內容係本發明之原理的範例,且不會將本發明限制於所說 明之具體實施例。 Of course, the invention disclosed herein is susceptible to many specific embodiments in various forms. Preferred embodiments of the invention are shown in the drawings and described in detail below. However, it will be appreciated that the present disclosure is an example of the principles of the invention and is not intended to limit the invention Specific embodiments of the invention.

翻至圖1,圖1說明按照本發明之熱光電裝置104及微米間隙熱光電裝置106技術。兩技術可使用來自氣體、油或煤炭110的燃燒之熱、核能120、來自工業製程130的廢熱、或太陽之熱140。熱光電裝置(TPV)104包括被加熱的黑體150,該黑體150將電磁能量輻射越過一大尺寸的間隙190至光電裝置160上,該光電裝置160將輻射功率轉換成電功率。出自於一給定之TPV裝置面積的功率之數量被該裝置之熱的側面之溫度所限制,且大致上需要很高的溫度,對其實際使用造成障礙。藉由對比,藉由減少該功率發射器150及接收器160間之間隙195的尺寸,微米尺寸間隙195熱光電(MTPV)裝置106允許該功率發射器150及接收器160間之更多功率的轉移。藉由採用次微米間隙技術,如與傳統TPV裝置104作比較,用於MTPV裝置106之可達成的功率密度能被增加達大約一數量級。同等地,用於一給定之有效區域及功率密度,MTPV裝置之熱的側面上之溫度能被減少。這允許用在晶片上之功率、廢熱發電及轉換器功率上之新的應用。 Turning to Figure 1, Figure 1 illustrates a thermo-optical device 104 and a micro-gap thermo-optical device 106 technique in accordance with the present invention. Both techniques may use the heat of combustion from gas, oil or coal 110, nuclear energy 120, waste heat from industrial process 130, or solar heat 140. The thermo-optical device (TPV) 104 includes a heated black body 150 that radiates electromagnetic energy across a large-sized gap 190 onto the optoelectronic device 160, which converts the radiated power into electrical power. The amount of power from a given TPV device area is limited by the temperature of the hot side of the device and generally requires a very high temperature, which creates an obstacle to its actual use. By contrast, by reducing the size of the gap 195 between the power transmitter 150 and the receiver 160, the micro-scale gap 195 thermo-optical (MTPV) device 106 allows for more power between the power transmitter 150 and the receiver 160. Transfer. By employing sub-micron gap techniques, the achievable power density for the MTPV device 106 can be increased by an order of magnitude as compared to conventional TPV devices 104. Equally, for a given effective area and power density, the temperature on the hot side of the MTPV device can be reduced. This allows for new applications in power, waste heat generation and converter power on the wafer.

由於近場之逐漸消失的耦合,其已被顯示熱的及冷的本體間之電磁能量轉移為該等本體間之接近間距的一函數。如此,該等本體170越接近、大約一微米及更低,則該功率轉移越大。用於0.1微米的間隙間距180,可觀察到 能量轉移因子的比率增加五甚至更高。藉由在熱放射表面150及光電集極160之間使用次微米間隙195,吾人觀察到由固體至固體之光子的轉移比具有大間隙190係可能有更增強的比率。除了僅卜朗克輻射定律之外,額外之轉移機制被涉及,雖然該等光子之光譜分布係一黑體的光譜分布。然而,次微米間隙之使用暗示一真空環境被使用,以避免藉由不能激發電子進入該傳導帶的低能量光子造成越過該間隙的過度之熱傳導。為有效率地利用該熱之來源,高份額之高能量光子必需被產生。被使用於分開該放射表面與該光電池之結構在直徑中必需為小的,且用於該等相同之效率考量亦必需為一非常好之熱絕緣體。該光電池大致上將必需稍微被冷卻,以致其將適當地起作用。在高溫,本質載子產生沈沒該PN接面,且其不再為電子之有效的集極。 Due to the gradual disappearing coupling of the near field, it has been shown that the electromagnetic energy transfer between the hot and cold bodies is a function of the close spacing between the bodies. As such, the closer the bodies 170 are, approximately one micron and lower, the greater the power transfer. For a 0.1 micron gap spacing of 180, observable The ratio of energy transfer factors is increased by five or even higher. By using the submicron gap 195 between the heat radiating surface 150 and the photocollector 160, we have observed that the transfer of photons from solid to solid may have a more enhanced ratio than having a large gap 190. In addition to only the Planck radiation law, an additional transfer mechanism is involved, although the spectral distribution of the photons is a black body spectral distribution. However, the use of sub-micron gaps implies that a vacuum environment is used to avoid excessive heat conduction across the gap by low energy photons that are unable to excite electrons into the conduction band. In order to efficiently utilize this source of heat, a high share of high energy photons must be produced. The structure used to separate the radiating surface from the photovoltaic cell must be small in diameter, and the same efficiency considerations must also be a very good thermal insulator. The photocell will generally need to be cooled slightly so that it will function properly. At high temperatures, the essential carrier creates a collector that sinks the PN junction and is no longer an effective electron.

翻至圖2A,圖2A說明單側式MTPV裝置的一具體實施例200。該具體實施例包含一熱介面210,用於在被暴露至高溫的外殼及熱的側面發射器215之間導熱。該熱的側面發射器215係與冷的側面光電池225分開達一藉由間隔件220所維持之微米間隙。箔材膜片230被定位於該冷的側面光電池225及一含有液體金屬的室235之間,該液體金屬被維持在受控制的壓力之下。此加壓室235確保該熱的側面發射器215及熱介面210遍及一寬廣的溫度範圍被維持與該外殼密切接觸。毗連該液體金屬室235者係一散熱器240,該散熱器240係藉由冷卻劑室245中之連續流動 的冷卻劑所冷卻。該冷卻劑室245係藉由冷卻劑室密封件250及氣動室撓性密封件255而與氣動室260分開。該氣動室260被維持在一受控制的壓力,以進一步確保在該散熱器240、該液體金屬室235、該冷的側面發射器225、該熱的側面發射器215、該熱介面210、及該外殼之間維持密切接觸。氣動室固定的密封件265被定位於該氣動室260及冷卻水歧管270之間,該冷卻水歧管270被連接至連續供給之循環冷卻水以用於冷卻該散熱器240。 Turning to Figure 2A, Figure 2A illustrates a specific embodiment 200 of a single-sided MTPV device. This embodiment includes a thermal interface 210 for conducting heat between the outer casing exposed to high temperatures and the hot side emitter 215. The hot side emitter 215 is separated from the cold side photocell 225 by a micron gap maintained by the spacer 220. The foil diaphragm 230 is positioned between the cold side photocell 225 and a liquid metal containing chamber 235 which is maintained under controlled pressure. The pressurized chamber 235 ensures that the hot side emitter 215 and the thermal interface 210 are maintained in intimate contact with the outer casing over a wide temperature range. Adjacent to the liquid metal chamber 235 is a heat sink 240 that is continuously flowed through the coolant chamber 245. The coolant is cooled. The coolant chamber 245 is separated from the pneumatic chamber 260 by a coolant chamber seal 250 and a pneumatic chamber flexible seal 255. The pneumatic chamber 260 is maintained at a controlled pressure to further ensure the heat sink 240, the liquid metal chamber 235, the cold side emitter 225, the hot side emitter 215, the thermal interface 210, and Close contact is maintained between the outer casings. A pneumatic chamber fixed seal 265 is positioned between the pneumatic chamber 260 and the cooling water manifold 270 that is connected to the continuously supplied circulating cooling water for cooling the heat sink 240.

翻至圖2B,圖2B說明雙側式MTPV裝置之具體實施例205。該雙側式MTPV裝置包含上文關於圖2A所敘述之結構及一額外之結構,該額外之結構係圖2A所示結構之倒轉影像,且被附接至該共用之冷卻水歧管270。此結構能夠收集來自MTPV裝置之兩側的熱。 Turning to Figure 2B, Figure 2B illustrates a specific embodiment 205 of a two-sided MTPV device. The two-sided MTPV device includes the structure described above with respect to FIG. 2A and an additional structure that is an inverted image of the structure shown in FIG. 2A and that is attached to the shared cooling water manifold 270. This structure is capable of collecting heat from both sides of the MTPV device.

翻至圖3,圖3說明一顯示該MTPV裝置之操作的具體實施例300。該MTPV裝置305被暴露至輻射及傳導的熱通量310,該熱通量310加熱該外部表面及該熱的側面/冷的側面對320、330之熱的側面。一真空被維持在該MTPV裝置305的內部,且該冷的側面之光電池係藉由循環水340、350從該內側被冷卻。輸出功率360、370係由該裝置305獲得。 Turning to Figure 3, Figure 3 illustrates a specific embodiment 300 showing the operation of the MTPV device. The MTPV device 305 is exposed to a radiated and conducted heat flux 310 that heats the outer surface and the hot side of the hot side/cold side pair 320, 330. A vacuum is maintained inside the MTPV device 305, and the cold side photovoltaic cells are cooled from the inside by circulating water 340,350. Output power 360, 370 is obtained by the device 305.

翻至圖4,圖4說明一“Quad”MTPV裝置的前端之截面視圖的實用具體實施例400。該Quad MTPV裝置係用於實施該MTPV技術之基本構建塊。該前端包含一於高溫外殼及熱的側面發射器420間之導熱的石墨介面410。微米 間隙430被維持於該熱的側面發射器420及冷的側面光電池440之間。箔材膜片450被定位於該冷的側面發射器440及液體金屬室460之間。散熱器470之表面及該箔材膜片450包圍該液體金屬室460。 Turning to Figure 4, Figure 4 illustrates a practical embodiment 400 of a cross-sectional view of the front end of a "Quad" MTPV device. The Quad MTPV device is used to implement the basic building blocks of the MTPV technology. The front end includes a thermally conductive graphite interface 410 between the high temperature outer casing and the hot side emitter 420. Micron The gap 430 is maintained between the hot side emitter 420 and the cold side photocell 440. A foil diaphragm 450 is positioned between the cold side emitter 440 and the liquid metal chamber 460. The surface of the heat sink 470 and the foil diaphragm 450 surround the liquid metal chamber 460.

該等發射器420之目的係吸收來自該Quad MTPV裝置的外殼內側之熱。發射器晶片420係典型、但不須由矽所製成,且具有在該間隙側面上之微機械加工的二氧化矽間隔件。該發射器420之平滑側面被壓抵靠著該熱的外殼的內側。石墨熱介面材料410被夾在該發射器420及該外殼之間,以改善熱傳送。該外殼係在一高爐內藉由該輻射及對流能量所加熱,且該熱被傳導經由該外殼、越過一熱介面材料410、及進入該矽發射器420,造成該矽發射器420變得非常熱。 The purpose of the emitters 420 is to absorb heat from the inside of the outer casing of the Quad MTPV device. The emitter wafer 420 is typically, but not necessarily, made of tantalum and has a micromachined ceria spacer on the side of the gap. The smooth side of the emitter 420 is pressed against the inside of the hot outer casing. A graphite thermal interface material 410 is sandwiched between the emitter 420 and the outer casing to improve heat transfer. The outer casing is heated by the radiation and convection energy in a blast furnace, and the heat is conducted through the outer casing, over a thermal interface material 410, and into the crucible emitter 420, causing the crucible emitter 420 to become very heat.

該等光電池440被設計成將由一熱的本體所放射之部份光線轉換成電力。更明確地是,該等光電池440具有一非常平坦之表面,以致當它們被壓抵靠著該放射表面420上之間隔件時,非常小的真空間隙被形成。該等間隔件被設計,以致很小之熱流動係由該熱的發射器420傳導至該相當冷的光電池440。該光電池440及發射器420係亦由高指數材料所製成,以獲得最多數量之近場耦合能量增強。由該等發射器420傳送至該等光電池440的光之某一百分比被轉換成電力。 The photovoltaic cells 440 are designed to convert a portion of the light emitted by a hot body into electrical power. More specifically, the photovoltaic cells 440 have a very flat surface such that a very small vacuum gap is formed as they are pressed against the spacers on the radiation surface 420. The spacers are designed such that little thermal flow is conducted by the hot emitter 420 to the relatively cool photovoltaic cell 440. The photocell 440 and emitter 420 are also made of a high index material to achieve the maximum number of near field coupling energy enhancements. A certain percentage of the light transmitted by the emitters 420 to the photovoltaic cells 440 is converted to electricity.

翻至圖5,圖5係Quad MTPV裝置之截面視圖500。此視圖係宏觀的立體圖,其包含圖4中所示元件。該Quad MTPV裝置包含一亦已知為冷卻水歧管510的水分配外殼、伸縮軟管次組件560、570、散熱器次組件470、氣動次組件530、540、550、液體金屬隔間460(亦見圖4)、膜片與光電次組件440、450(亦見圖4)、熱的側面發射器陣列410、420(亦見圖4)、及線性致動器壓力調整器(在該水分配外殼內側)。這些元件形成該基本之Quad MTPV裝置構建塊。一或多個Quad MTPV裝置通常被包圍在一抽空的附接件或熱的外殼中,該附接件或外殼被暴露至高溫以用於產生電功率。 Turning to Figure 5, Figure 5 is a cross-sectional view 500 of a Quad MTPV device. This view is a macroscopic perspective view of the elements shown in Figure 4. The Quad The MTPV device includes a water distribution housing, also known as a cooling water manifold 510, telescoping hose sub-assembly 560, 570, radiator sub-assembly 470, pneumatic sub-assembly 530, 540, 550, liquid metal compartment 460 (see also Figure 4), diaphragm and optoelectronic subassembly 440, 450 (see also Figure 4), hot side emitter array 410, 420 (see also Figure 4), and linear actuator pressure regulator (in the water distribution housing) Inside). These elements form the basic Quad MTPV device building block. One or more Quad MTPV devices are typically enclosed in an evacuated attachment or thermal enclosure that is exposed to high temperatures for electrical power generation.

該膜片450、液體金屬460、散熱器470、及伸縮軟管次組件570具有很多耦接功能性。該等金屬伸縮軟管570在該水分配外殼510及該散熱器470、該入口側上之一組伸縮軟管570及該出口側上之另一組伸縮軟管之間轉移水。該等伸縮軟管570亦用作膨脹接頭,以致當該外殼加熱及膨脹時,該等伸縮軟管570伸長。該等伸縮軟管570總是被壓縮,以致它們提供一將該散熱器及膜片總成推向該熱的蓋件之力量,如此將該等光電池440推抵靠著該等發射器間隔件,並將該發射器420推抵靠著該熱的壁面。雖然該散熱器470具有用於讓水通過的內部空隙,該散熱器470亦用作該等光電池用之懸置平臺。經過該等伸縮軟管570之伸縮,該平臺可移進及移出與繞著二軸線傾斜。此接合方式允許該光電陣列420宏觀地順應該熱的外殼之定向。該撓性膜片450係在此處理該熱的外殼之曲率。 The diaphragm 450, liquid metal 460, heat sink 470, and telescoping hose subassembly 570 have many coupling functionalities. The metal bellows 570 transfers water between the water distribution housing 510 and the heat sink 470, a set of telescoping hoses 570 on the inlet side, and another set of telescoping hoses on the outlet side. The telescoping hoses 570 also function as expansion joints such that the telescoping hoses 570 are elongated as the outer casing heats and expands. The telescoping hoses 570 are always compressed such that they provide a force to urge the heat sink and diaphragm assembly toward the hot cover member such that the photovoltaic cells 440 are pushed against the emitter spacers And pushing the emitter 420 against the hot wall. Although the heat sink 470 has an internal space for allowing water to pass through, the heat sink 470 is also used as a suspension platform for the photovoltaic cells. Through the expansion and contraction of the telescoping hoses 570, the platform can be moved in and out and tilted about the two axes. This manner of engagement allows the photovoltaic array 420 to macroscopically conform to the orientation of the hot outer casing. The flexible diaphragm 450 is here to treat the curvature of the hot outer casing.

該膜片450係用於該等晶片之第二懸置件。該第一懸 置件應付由於熱膨脹之僵硬的本體動作,且由於機器加工公差及差溫加熱而傾斜偏置。該膜片450係一用於該等光電池440的撓性懸置件,允許該陣列之光電池推抵靠著該等發射器420及彎曲與伸縮,使得該等晶片配合該外殼之彎曲形狀。注意當熱正交於一平板流動時,其為重要的是橫越該平板有一溫度下降,這造成熱彎曲、或扭曲。該等光電池440被接合至膜片450。該金屬膜片450具有電導體之絕緣層及佈圖層。在這種意義上,該膜片450用作一印刷電路板,將該等光電池440串連及/或平行地綁在一起、及將該電力載送至該膜片450之邊緣。 The diaphragm 450 is used for the second suspension of the wafers. The first suspension The set handles the rigid body action due to thermal expansion and is tilt biased due to machining tolerances and differential temperature heating. The diaphragm 450 is a flexible suspension for the photovoltaic cells 440 that allows the photovoltaic cells of the array to be pushed against the emitters 420 and bent and stretched such that the wafers conform to the curved shape of the outer casing. Note that when the heat is orthogonal to a plate, it is important that there is a temperature drop across the plate which causes thermal bending, or distortion. The photovoltaic cells 440 are bonded to the diaphragm 450. The metal diaphragm 450 has an insulating layer and a patterned layer of an electrical conductor. In this sense, the diaphragm 450 acts as a printed circuit board that bundles the photovoltaic cells 440 in series and/or in parallel and carries the electrical power to the edges of the diaphragm 450.

該膜片450係環繞著該等邊緣被密封至該平臺,於該膜片450及該平臺之間留下一小的間隙。此空間係接著以液體金屬充填。該液體金屬具有二目的之作用。首先,其提供一於該等光電池440及該散熱器470間之熱路徑。其次,因為其為流體,其允許該膜片450伸縮。 The diaphragm 450 is sealed to the platform around the edges leaving a small gap between the diaphragm 450 and the platform. This space is then filled with liquid metal. The liquid metal has a dual purpose. First, it provides a thermal path between the photovoltaic cells 440 and the heat sink 470. Second, because it is a fluid, it allows the diaphragm 450 to expand and contract.

該熱的外殼係由高溫金屬所製成,且於該Quad MTPV裝置被放置在內側之後被牢固地封閉。該外殼之尺寸視Quad MTPV裝置之數目及分配而定。該等內側表面被拋光,以致它們具有一低的發射係數。該等外側表面被故意地氧化至黑色面層,以致它們將由該高爐吸收更多輻射熱。該外殼具有穿透通口,用於冷卻流體、真空泵吸、及電線。 The hot outer casing is made of high temperature metal and is securely closed after the Quad MTPV device is placed inside. The dimensions of the enclosure depend on the number and distribution of the Quad MTPV devices. The inner side surfaces are polished such that they have a low emission coefficient. The outer surfaces are deliberately oxidized to the black top layer such that they will absorb more radiant heat from the blast furnace. The housing has a through port for cooling fluid, vacuum pumping, and electrical wiring.

該氣動次組件530、540、550安置在該水分配外殼510及該散熱器470之間。與該等伸縮軟管570平行,該氣動 隔膜530往外推該散熱器470朝向該熱的外殼,如此在該膜片450及該熱的外殼之間擠壓該等光電池440及發射器420。以該液體金屬孔腔中之適當數量的氣動力及壓力,該膜片450、晶片、及外殼將全部採用相同之形狀,且該發射器420及光電池440間之間隙將為均勻的(但不須平坦的)。 The pneumatic subassembly 530, 540, 550 is disposed between the water distribution housing 510 and the heat sink 470. Parallel to the telescoping hoses 570, the pneumatic The diaphragm 530 pushes the heat sink 470 outward toward the hot outer casing such that the photocell 440 and the emitter 420 are squeezed between the diaphragm 450 and the hot outer casing. With the appropriate amount of aerodynamic force and pressure in the liquid metal cavity, the diaphragm 450, the wafer, and the outer casing will all adopt the same shape, and the gap between the emitter 420 and the photocell 440 will be uniform (but not Must be flat).

該熱流入該外殼、經過該熱介面材料410、及進入該發射器420。其係接著輻射越過次微米真空間隙至該光電池440,其中部份該能量被轉換成電力及藉由該膜片表面上之金屬化而取走。該熱之其餘部份通過該膜片450、液體金屬、銅、銅栓銷、及進入正不斷地被補充之冷卻水。 The heat flows into the outer casing, through the thermal interface material 410, and into the emitter 420. It is then irradiated across the submicron vacuum gap to the photocell 440 where a portion of the energy is converted to electricity and removed by metallization on the surface of the diaphragm. The remainder of the heat passes through the diaphragm 450, liquid metal, copper, copper pins, and into the cooling water that is being continuously replenished.

如果該等光電池440係全部串連地放入,則旁路二極體能被連接在每一列電池之端部,使得如果在一列內之光電池440故障,該列之所有光電池能被繞過,且該電流將被傳送至該下一列光電池。 If the photovoltaic cells 440 are all placed in series, the bypass diodes can be connected to the ends of each column of cells so that if the photovoltaic cells 440 in a column fail, all of the photovoltaic cells of the column can be bypassed, and Current will be delivered to the next column of photovoltaic cells.

翻至圖6,圖6說明被安裝在其總成的末端上之整個Quad MTPV裝置600。在圖6中所顯示者係熱的側面發射器陣列410、420、膜片及光電總成440、450、液體金屬室460、散熱器470、水分配外殼510、氣動室540、電氣連接件610、及氣動連接件620、630。 Turning to Figure 6, Figure 6 illustrates the entire Quad MTPV device 600 mounted on the end of its assembly. The hot side emitter arrays 410, 420, diaphragm and optoelectronic assemblies 440, 450, liquid metal chamber 460, heat sink 470, water distribution housing 510, pneumatic chamber 540, electrical connector 610 are shown in FIG. And pneumatic connectors 620, 630.

該線性致動器包括馬達及導螺桿,且被安置在該水分配外殼510的內側。其目的係控制在該膜片450後方之液體的數量。該致動器驅動一被附接至滾動隔膜的活塞。該隔膜的內部係以液體金屬充填,該液體金屬能被泵吸經過導通至該液體金屬/隔膜室460的通道。為增加或減少在 該膜片450後方之液體金屬的數量,該致動器被分別往外或朝內驅動。該致動器亦被使用來控制該液體金屬中之壓力。一模具彈簧係在該線性致動器及該活塞之間。來自該致動器的力量通過該彈簧及進入該活塞,以致該彈簧總是被壓縮。這允許該致動器調整該液體金屬壓力,縱使該活塞保持固定不動。該模具彈簧之壓縮係直接與該液體金屬壓力有關。 The linear actuator includes a motor and a lead screw and is disposed inside the water distribution housing 510. The purpose is to control the amount of liquid behind the diaphragm 450. The actuator drives a piston that is attached to the rolling diaphragm. The interior of the diaphragm is filled with a liquid metal that can be pumped through a passage that conducts to the liquid metal/membrane chamber 460. To increase or decrease in The number of liquid metals behind the diaphragm 450 is driven externally or inwardly, respectively. The actuator is also used to control the pressure in the liquid metal. A mold spring is coupled between the linear actuator and the piston. The force from the actuator passes through the spring and into the piston such that the spring is always compressed. This allows the actuator to adjust the liquid metal pressure even though the piston remains stationary. The compression of the mold spring is directly related to the liquid metal pressure.

翻至圖7,圖7說明該等各種零件,其被組裝以形成Quad MTPV裝置700。這些零件包含光電陣列710與散熱器頂部715、散熱器底部720、水外殼頂部蓋件735、伺服計量(servometer)伸縮軟管725、水外殼側面蓋件730、水外殼740、伸縮軟管連接器745、伺服計量伸縮軟管750、及伸縮軟管管件755。 Turning to Figure 7, Figure 7 illustrates the various components that are assembled to form a Quad MTPV device 700. These parts include a photovoltaic array 710 and a heat sink top 715, a heat sink bottom 720, a water housing top cover 735, a servo meter telescoping hose 725, a water housing side cover 730, a water housing 740, a telescoping hose connector. 745, servo metering flexible hose 750, and telescopic hose fitting 755.

翻至圖8,圖8說明一完全組裝的Quad MTPV裝置800。如在圖8中所顯示,Quad MTPV裝置包含光電陣列710與散熱器頂部715、伺服計量伸縮軟管725、水外殼側面蓋件730、水外殼740、及至外部控制模組的電氣與氣動連接件770。 Turning to Figure 8, Figure 8 illustrates a fully assembled Quad MTPV device 800. As shown in FIG. 8, the Quad MTPV device includes a photovoltaic array 710 and a heat sink top 715, a servo metering flexible hose 725, a water housing side cover 730, a water housing 740, and electrical and pneumatic connections to an external control module. 770.

翻至圖9,圖9說明在其外殼內之單一Quad MTPV裝置900,並已移除該外殼之頂部蓋件。所顯示者係圖8中所示之完全被組裝的Quad MTPV裝置800、熱的外殼910、水冷卻劑連接件930、940、及真空通口920。未示出者係一至氣動控制模組的連接件。 Turning to Figure 9, Figure 9 illustrates a single Quad MTPV device 900 within its housing and the top cover of the housing has been removed. Shown is a fully assembled Quad MTPV device 800, a hot outer casing 910, water coolant connections 930, 940, and a vacuum port 920 as shown in FIG. A connector that is not shown is a connection to the pneumatic control module.

翻至圖10,圖10說明經過爐壁滑入其熱的外殼之Quad MTPV裝置模組1000。所顯示者係Quad MTPV裝置800、熱的外殼1020、爐壁1030、Quad MTPV裝置模組附接件910、水冷卻劑連接件930、940、及至電力設備、真空控制模組、與氣動控制模組1010的連接件。 Turning to Figure 10, Figure 10 illustrates the Quad that slides through the furnace wall into its hot outer casing. MTPV device module 1000. The display is a Quad MTPV device 800, a hot outer casing 1020, a furnace wall 1030, a Quad MTPV device module attachment 910, a water coolant connection 930, 940, and to an electrical equipment, a vacuum control module, and a pneumatic control module. The connector of group 1010.

翻至圖11,圖11顯示一包含四個Quad MTPV裝置及冷卻劑連接件1100的模組。其可包含高達四個雙側式Quad MTPV裝置模組800及冷卻劑連接件1130、1140。 Turning to Figure 11, Figure 11 shows a module comprising four Quad MTPV devices and a coolant connection 1100. It can include up to four double-sided Quad MTPV device modules 800 and coolant connections 1130, 1140.

翻至圖12,圖12顯示被連接至共用之冷卻劑管線的Quad MTPV裝置模組1200之陣列。其顯示被連接至共用之冷卻劑管線1230、1240的24個Quad MTPV裝置模組800。雖然每一個Quad MTPV裝置含有光電池及發射器晶片之陣列,一面板可含有M x N陣列之Quad MTPV裝置,其中M及N係大於或等於一。Quad MTPV裝置陣列可藉由冷卻管被連接在一起,使得該等單元被串連或平行地冷卻。 Turning to Figure 12, Figure 12 shows an array of Quad MTPV device modules 1200 that are connected to a common coolant line. It shows 24 Quad MTPV device modules 800 that are connected to a common coolant line 1230, 1240. While each Quad MTPV device contains an array of photovoltaic cells and emitter wafers, a panel may contain an M x N array of Quad MTPV devices, where the M and N systems are greater than or equal to one. The array of Quad MTPV devices can be connected together by cooling tubes such that the cells are cooled in series or in parallel.

翻至圖13,圖13顯示被連接至包括一或多個Quad MTPV裝置1300的MTPV面板所需之控制模組。所顯示者係MPTV面板1350、冷卻控制模組1310、真空控制模組1320、及氣動壓力控制模組1330。 Turning to Figure 13, Figure 13 shows the control modules required to be connected to an MTPV panel comprising one or more Quad MTPV devices 1300. The display is an MPTV panel 1350, a cooling control module 1310, a vacuum control module 1320, and a pneumatic pressure control module 1330.

用於本發明之本質及目的之進一步了解,應會同所附圖面參考以下之詳細敘述,在該等圖面中,類似元件被給與相同或類似之參考數字,且其中:圖1說明按照本發明之熱光電及微米間隙熱光電技術; 圖2A說明單側式MTPV裝置之具體實施例;圖2B說明雙側式MTPV裝置之具體實施例;圖3說明該MTPV裝置之操作的一具體實施例300;圖4說明“四個一組的(Quad)”MTPV裝置的前端之截面視圖的實用具體實施例;圖5係Quad MTPV裝置的截面視圖500;圖6說明被安裝在其總成的端部上之整個Quad MTPV裝置:圖7說明被組裝以形成Quad MTPV裝置之各種零件;圖8說明一完全組裝之Quad MTPV裝置;圖9說明在其外殼內之單一Quad MTPV裝置,並使其頂部蓋件被移除;圖10說明經過爐壁滑入其熱的外殼之Quad MTPV裝置模組;圖11顯示一包含四個Quad MTPV裝置及冷卻劑連接件的模組;圖12顯示被連接至共用之冷卻劑管線的一陣列之Quad MTPV裝置模組;及圖13顯示被連接至包括一或多個Quad MTPV裝置的MTPV面板所需之控制模組。 The detailed description of the nature and the aspects of the present invention should be understood by reference to the accompanying drawings in which Thermal photoelectric and micro-gap thermal photoelectric technology of the present invention; 2A illustrates a specific embodiment of a single-sided MTPV device; FIG. 2B illustrates a specific embodiment of a dual-sided MTPV device; FIG. 3 illustrates a specific embodiment 300 of operation of the MTPV device; FIG. 4 illustrates "four groups of (Quad) A practical embodiment of a cross-sectional view of the front end of the MTPV device; Figure 5 is a cross-sectional view 500 of the Quad MTPV device; Figure 6 illustrates the entire Quad MTPV device mounted on the end of its assembly: Figure 7 illustrates Assembly to form the various components of the Quad MTPV device; Figure 8 illustrates a fully assembled Quad MTPV device; Figure 9 illustrates a single Quad MTPV device in its housing with its top cover removed; Figure 10 illustrates the furnace The Quad MTPV device module with the wall sliding into its hot outer casing; Figure 11 shows a module containing four Quad MTPV devices and coolant connections; Figure 12 shows an array of Quad MTPV connected to a common coolant line. The device module; and Figure 13 shows the control modules required to be connected to an MTPV panel comprising one or more Quad MTPV devices.

Claims (25)

一種使用次微米間隙熱光電技術將熱能轉換成電力之方法,包括以下步驟:藉由輻射放射層之收集表面收集來自熱傳導殼體的內表面之熱能,該殼體的外表面被暴露至高溫熱能來源;將光電池之接收表面與該輻射放射層的放射表面間之距離維持少於一微米;藉由該接收表面接收來自該放射表面的電磁輻射,用於藉由該光電池產生電力;藉由被加壓、熱傳導、可變形的膜片在該光電池上提供壓力,用於保持該輻射放射層之收集表面與該殼體的內表面密切接觸和用於使冷卻最大化;及在與該熱傳導之可變形的膜片接觸之散熱器上提供壓力,用於使冷卻最大化。 A method of converting thermal energy into electrical power using sub-micron gap thermal optoelectronic technology, comprising the steps of: collecting thermal energy from an inner surface of a thermally conductive casing by a collecting surface of a radiation emitting layer, the outer surface of the casing being exposed to high temperature heat a source of energy; maintaining a distance between the receiving surface of the photovoltaic cell and the radiating surface of the radiation emitting layer of less than one micron; receiving electromagnetic radiation from the radiating surface for generating electricity by the photovoltaic cell; a pressurized, thermally conductive, deformable diaphragm provides pressure on the photovoltaic cell for maintaining the collection surface of the radiation emitting layer in intimate contact with the inner surface of the housing and for maximizing cooling; and in conducting the heat transfer The deformable diaphragm contacts the heat sink to provide pressure for maximizing cooling. 如申請專利範圍第1項使用次微米間隙熱光電技術將熱能轉換成電力之方法,另包括在該放射表面及該接收表面之間建立一真空,用於使熱傳導減至最小。 A method of converting thermal energy into electrical power using sub-micron gap thermo-optical technology, as in claim 1, further includes establishing a vacuum between the radiating surface and the receiving surface for minimizing heat transfer. 如申請專利範圍第2項使用次微米間隙熱光電技術將熱能轉換成電力之方法,其中該真空係少於10-3托耳。 A method of converting thermal energy into electricity using sub-micron gap thermo-optical technology, as in claim 2, wherein the vacuum system is less than 10 -3 Torr. 如申請專利範圍第1項使用次微米間隙熱光電技術將熱能轉換成電力之方法,另包括在該殼體的內側維持真空。 For example, the method of using the sub-micron gap thermo-optical technology to convert thermal energy into electric power, as in claim 1, further includes maintaining a vacuum inside the casing. 如申請專利範圍第1項使用次微米間隙熱光電技術將熱能轉換成電力之方法,其中該光電池之接收表面與該 輻射放射層的放射表面間之距離典型係在0.10及0.30微米之間。 A method for converting thermal energy into electric power using sub-micron gap thermo-optical technology, as in the first application of the patent scope, wherein the receiving surface of the photovoltaic cell The distance between the radiating surfaces of the radiation-emitting layer is typically between 0.10 and 0.30 microns. 如申請專利範圍第1項使用次微米間隙熱光電技術將熱能轉換成電力之方法,另包括藉由使用熱絕緣間隔件來維持該光電池之接收表面與該輻射放射層的放射表面間之距離。 A method of converting thermal energy into electrical power using sub-micron gap thermo-optical technology, as in claim 1, further comprising maintaining a distance between a receiving surface of the photovoltaic cell and a radiating surface of the radiation radiating layer by using a thermally insulating spacer. 如申請專利範圍第1項使用次微米間隙熱光電技術將熱能轉換成電力之方法,其中該可變形的膜片係藉由線性致動器及以液體金屬充填的孔腔所加壓。 A method of converting thermal energy into electrical power using sub-micron gap thermo-optical technology, as in claim 1, wherein the deformable diaphragm is pressurized by a linear actuator and a cavity filled with liquid metal. 如申請專利範圍第1項使用次微米間隙熱光電技術將熱能轉換成電力之方法,另包括在輻射放射層之收集表面及該熱傳導殼體的內表面之間置入一熱介面。 For example, the method of using the sub-micron gap thermo-optical technology to convert thermal energy into electric power, as in claim 1, further includes placing a thermal interface between the collecting surface of the radiation emitting layer and the inner surface of the heat conducting casing. 如申請專利範圍第8項使用次微米間隙熱光電技術將熱能轉換成電力之方法,其中該熱介面包括熱傳導之石墨。 A method of converting thermal energy into electricity using sub-micron gap thermo-optical technology, as in claim 8, wherein the thermal interface comprises thermally conductive graphite. 如申請專利範圍第1項使用次微米間隙熱光電技術將熱能轉換成電力之方法,另包括藉由將冷卻劑液體循環經過散熱器孔腔來減少該光電池、該散熱器、該液體金屬室、及該可變形的膜片之溫度。 The method of using the sub-micron gap thermo-optical technology to convert thermal energy into electric power, as in claim 1, further comprising reducing the photocell, the radiator, the liquid metal chamber by circulating a coolant liquid through the radiator cavity, And the temperature of the deformable membrane. 如申請專利範圍第10項使用次微米間隙熱光電技術將熱能轉換成電力之方法,另包括經由使用撓性伸縮軟管及水分配外殼來分配冷卻劑液體。 A method of converting thermal energy into electricity using sub-micron gap thermo-optical technology, as in claim 10, further includes dispensing a coolant liquid by using a flexible bellows and a water distribution housing. 一種使用次微米間隙熱光電技術將熱能轉換成電力之裝置,包括: 輻射放射層之收集表面,用於由熱傳導殼體的內表面收集熱能,該殼體的外表面被暴露至高溫熱能來源;光電池之接收表面,離該輻射放射層的放射表面被維持在少於一微米距離;來自該放射表面的電磁輻射,被該接收表面所接收,用於藉由該光電池產生電力;該光電池,藉由被加壓、熱傳導、可變形的膜片所加壓,用於保持該輻射放射層之收集表面與該殼體的內表面密切接觸和用於使冷卻最大化;及散熱器,被加壓至與該熱傳導之可變形的膜片接觸,用於使冷卻最大化。 A device for converting thermal energy into electricity using sub-micron gap thermo-optical technology, including: a collecting surface of the radiation radiation layer for collecting thermal energy from the inner surface of the heat conducting casing, the outer surface of the casing being exposed to a source of high temperature heat energy; the receiving surface of the photovoltaic cell being maintained from the radiation surface of the radiation emitting layer At a distance of one micron; electromagnetic radiation from the radiating surface is received by the receiving surface for generating electricity by the photovoltaic cell; the photovoltaic cell is pressurized by a pressurized, thermally conductive, deformable membrane Maintaining the collection surface of the radiation emissive layer in intimate contact with the inner surface of the housing and for maximizing cooling; and the heat sink being pressurized to contact the thermally conductive deformable diaphragm for maximizing cooling Chemical. 如申請專利範圍第12項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,另包括在輻射放射層之收集表面及該熱傳導殼體的內表面之間置入一熱介面。 A device for converting thermal energy into electric power using sub-micron gap thermo-optical technology, as in claim 12, further includes placing a thermal interface between the collecting surface of the radiation emitting layer and the inner surface of the thermally conductive casing. 如申請專利範圍第12項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,其中該熱介面係由熱傳導之石墨所組成。 For example, in the scope of claim 12, sub-micron gap thermo-optical technology is used to convert thermal energy into electric power, wherein the thermal interface is composed of heat-conducting graphite. 如申請專利範圍第12項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,其中在該放射表面及該接收表面之間維持真空。 A device for converting thermal energy into electricity using sub-micron gap thermo-optical technology, as in claim 12, wherein a vacuum is maintained between the radiating surface and the receiving surface. 如申請專利範圍第12項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,其中在該殼體內維持真空。 A device for converting thermal energy into electricity using sub-micron gap thermo-optical technology, as in claim 12, wherein a vacuum is maintained within the housing. 如申請專利範圍第12項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,另包括熱絕緣間隔件,用於 維持該光電池之接收表面與該輻射放射層的放射表面間之距離。 For example, in the scope of claim 12, sub-micron gap thermo-optical technology is used to convert thermal energy into electric power, and thermal insulation spacers are used for The distance between the receiving surface of the photovoltaic cell and the emitting surface of the radiation emitting layer is maintained. 如申請專利範圍第12項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,其中該可變形的膜片係藉由線性致動器及以液體金屬充填的孔腔來加壓。 A device for converting thermal energy into electricity using sub-micron gap thermo-optical technology, as in claim 12, wherein the deformable diaphragm is pressurized by a linear actuator and a cavity filled with liquid metal. 如申請專利範圍第12項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,另包括經由使用撓性伸縮軟管及水分配外殼來分配的冷卻劑液體。 A device for converting thermal energy into electricity using sub-micron gap thermo-optical technology, as in claim 12, and a coolant liquid distributed via the use of a flexible bellows and a water distribution housing. 一種使用次微米間隙熱光電技術將熱能轉換成電力之裝置,包括一用於圍繞Quad MTPV裝置之零組件的殼體,該裝置包括:發射器晶片陣列,被維持經由石墨熱介面與該殼體密切的熱接觸;膜片及光電陣列次組件,藉由熱絕緣間隔件與該發射器晶片陣列隔開;液體金屬室,其與該膜片接觸,用於維持該發射器晶片陣列與該殼體保持密切的熱接觸;散熱器次組件,用於接收冷卻該膜片、液體金屬室及該光電陣列用之液體冷卻劑;水分配外殼,用於經由伸縮軟管次組件分配液體冷卻劑至該散熱器次組件;氣動次組件,用於維持該散熱器與該液體金屬冷卻劑和光電陣列密切接觸;及線性致動器或壓力致動器,用於維持該氣動次組件中 之壓力。 A device for converting thermal energy into electrical power using sub-micron gap thermo-optical technology, comprising a housing for a component surrounding a Quad MTPV device, the device comprising: an array of emitter wafers maintained via a graphite thermal interface and the housing Intimate thermal contact; the diaphragm and the photovoltaic array subassembly are separated from the emitter wafer array by a thermally insulating spacer; a liquid metal chamber in contact with the diaphragm for maintaining the emitter wafer array and the housing The body maintains intimate thermal contact; a heat sink subassembly for receiving cooling of the diaphragm, the liquid metal chamber and the liquid coolant for the photovoltaic array; and a water distribution housing for dispensing liquid coolant via the telescopic hose subassembly to a heat sink subassembly; a pneumatic subassembly for maintaining the heat sink in intimate contact with the liquid metal coolant and the photovoltaic array; and a linear actuator or pressure actuator for maintaining the pneumatic subassembly The pressure. 如申請專利範圍第20項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,其中在該殼體內維持真空。 A device for converting thermal energy into electricity using sub-micron gap thermo-optical technology, as in claim 20, wherein a vacuum is maintained within the housing. 如申請專利範圍第20項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,其中該膜片係藉由該線性致動器及以液體金屬充填的孔腔來加壓。 A device for converting thermal energy into electricity using sub-micron gap thermo-optical technology, as in claim 20, wherein the diaphragm is pressurized by the linear actuator and a cavity filled with liquid metal. 如申請專利範圍第20項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,其中該Quad MTPV裝置含有多數光電及發射器晶片陣列。 A device for converting thermal energy into electricity using sub-micron gap thermo-optical technology, as in claim 20, wherein the Quad MTPV device contains a plurality of photovoltaic and emitter wafer arrays. 如申請專利範圍第20項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,其中殼體可為M x N陣列之Quad MTPV裝置,其中M及N係大於或等於一。 For example, in claim 20, the sub-micron gap thermo-optical technology is used to convert thermal energy into electric power, wherein the casing may be a M x N array of Quad MTPV devices, wherein the M and N systems are greater than or equal to one. 如申請專利範圍第20項使用次微米間隙熱光電技術將熱能轉換成電力之裝置,另包括冷卻控制模組、真空控制模組、及氣動壓力控制模組。 For example, in the scope of claim 20, the sub-micron gap thermo-optical technology is used to convert thermal energy into electric power, and further includes a cooling control module, a vacuum control module, and a pneumatic pressure control module.
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