TW201402732A - Polishing composition - Google Patents
Polishing composition Download PDFInfo
- Publication number
- TW201402732A TW201402732A TW102108840A TW102108840A TW201402732A TW 201402732 A TW201402732 A TW 201402732A TW 102108840 A TW102108840 A TW 102108840A TW 102108840 A TW102108840 A TW 102108840A TW 201402732 A TW201402732 A TW 201402732A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing composition
- polishing
- compound
- phase change
- acid
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 166
- 239000000203 mixture Substances 0.000 title claims abstract description 112
- 239000000956 alloy Substances 0.000 claims abstract description 60
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 60
- 150000001875 compounds Chemical class 0.000 claims abstract description 51
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 28
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims abstract description 23
- -1 hydroxyethyl group Chemical group 0.000 claims description 57
- 230000008859 change Effects 0.000 claims description 55
- 239000006061 abrasive grain Substances 0.000 claims description 33
- 229910052902 vermiculite Inorganic materials 0.000 claims description 19
- 239000010455 vermiculite Substances 0.000 claims description 19
- 235000019354 vermiculite Nutrition 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 125000003107 substituted aryl group Chemical group 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 29
- 238000005530 etching Methods 0.000 description 21
- 239000003795 chemical substances by application Substances 0.000 description 19
- 239000007800 oxidant agent Substances 0.000 description 17
- 239000012782 phase change material Substances 0.000 description 14
- 150000007524 organic acids Chemical class 0.000 description 12
- 239000000654 additive Substances 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 239000003112 inhibitor Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 239000011164 primary particle Substances 0.000 description 6
- 229910052714 tellurium Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- 150000002391 heterocyclic compounds Chemical group 0.000 description 5
- 150000007522 mineralic acids Chemical class 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- SUMDYPCJJOFFON-UHFFFAOYSA-N isethionic acid Chemical compound OCCS(O)(=O)=O SUMDYPCJJOFFON-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- PZOUSPYUWWUPPK-UHFFFAOYSA-N 4-methyl-1h-indole Chemical compound CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229940024606 amino acid Drugs 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 2
- BHNHHSOHWZKFOX-UHFFFAOYSA-N 2-methyl-1H-indole Chemical compound C1=CC=C2NC(C)=CC2=C1 BHNHHSOHWZKFOX-UHFFFAOYSA-N 0.000 description 2
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 2
- VZWGRQBCURJOMT-UHFFFAOYSA-N Dodecyl acetate Chemical compound CCCCCCCCCCCCOC(C)=O VZWGRQBCURJOMT-UHFFFAOYSA-N 0.000 description 2
- 239000004471 Glycine Substances 0.000 description 2
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 2
- KZSNJWFQEVHDMF-BYPYZUCNSA-N L-valine Chemical compound CC(C)[C@H](N)C(O)=O KZSNJWFQEVHDMF-BYPYZUCNSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- FFDGPVCHZBVARC-UHFFFAOYSA-N N,N-dimethylglycine Chemical compound CN(C)CC(O)=O FFDGPVCHZBVARC-UHFFFAOYSA-N 0.000 description 2
- SEQKRHFRPICQDD-UHFFFAOYSA-N N-tris(hydroxymethyl)methylglycine Chemical compound OCC(CO)(CO)[NH2+]CC([O-])=O SEQKRHFRPICQDD-UHFFFAOYSA-N 0.000 description 2
- OIZXRZCQJDXPFO-UHFFFAOYSA-N Octadecyl acetate Chemical compound CCCCCCCCCCCCCCCCCCOC(C)=O OIZXRZCQJDXPFO-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 2
- KZSNJWFQEVHDMF-UHFFFAOYSA-N Valine Natural products CC(C)C(N)C(O)=O KZSNJWFQEVHDMF-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 235000001014 amino acid Nutrition 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- UCMIRNVEIXFBKS-UHFFFAOYSA-N beta-alanine Chemical compound NCCC(O)=O UCMIRNVEIXFBKS-UHFFFAOYSA-N 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 235000015165 citric acid Nutrition 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- CVSVTCORWBXHQV-UHFFFAOYSA-N creatine Chemical compound NC(=[NH2+])N(C)CC([O-])=O CVSVTCORWBXHQV-UHFFFAOYSA-N 0.000 description 2
- DDRJAANPRJIHGJ-UHFFFAOYSA-N creatinine Chemical compound CN1CC(=O)NC1=N DDRJAANPRJIHGJ-UHFFFAOYSA-N 0.000 description 2
- XVOYSCVBGLVSOL-UHFFFAOYSA-N cysteic acid Chemical compound OC(=O)C(N)CS(O)(=O)=O XVOYSCVBGLVSOL-UHFFFAOYSA-N 0.000 description 2
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 2
- 235000018417 cysteine Nutrition 0.000 description 2
- 229960002433 cysteine Drugs 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- BTCSSZJGUNDROE-UHFFFAOYSA-N gamma-aminobutyric acid Chemical compound NCCCC(O)=O BTCSSZJGUNDROE-UHFFFAOYSA-N 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 239000010954 inorganic particle Substances 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- FGKJLKRYENPLQH-UHFFFAOYSA-N isocaproic acid Chemical compound CC(C)CCC(O)=O FGKJLKRYENPLQH-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- YLYBTZIQSIBWLI-UHFFFAOYSA-N octyl acetate Chemical compound CCCCCCCCOC(C)=O YLYBTZIQSIBWLI-UHFFFAOYSA-N 0.000 description 2
- 239000011146 organic particle Substances 0.000 description 2
- 239000003002 pH adjusting agent Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229910052699 polonium Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 description 2
- 229960001153 serine Drugs 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- ZFRKQXVRDFCRJG-UHFFFAOYSA-N skatole Chemical compound C1=CC=C2C(C)=CNC2=C1 ZFRKQXVRDFCRJG-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011975 tartaric acid Substances 0.000 description 2
- 235000002906 tartaric acid Nutrition 0.000 description 2
- XOAAWQZATWQOTB-UHFFFAOYSA-N taurine Chemical compound NCCS(O)(=O)=O XOAAWQZATWQOTB-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004474 valine Substances 0.000 description 2
- 229960004295 valine Drugs 0.000 description 2
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- NYPYHUZRZVSYKL-UHFFFAOYSA-N -3,5-Diiodotyrosine Natural products OC(=O)C(N)CC1=CC(I)=C(O)C(I)=C1 NYPYHUZRZVSYKL-UHFFFAOYSA-N 0.000 description 1
- FMCUPJKTGNBGEC-UHFFFAOYSA-N 1,2,4-triazol-4-amine Chemical compound NN1C=NN=C1 FMCUPJKTGNBGEC-UHFFFAOYSA-N 0.000 description 1
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 1
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 1
- LUTLAXLNPLZCOF-UHFFFAOYSA-N 1-Methylhistidine Natural products OC(=O)C(N)(C)CC1=NC=CN1 LUTLAXLNPLZCOF-UHFFFAOYSA-N 0.000 description 1
- HBOMLICNUCNMMY-KJFJCRTCSA-N 1-[(4s,5s)-4-azido-5-(hydroxymethyl)oxolan-2-yl]-5-methylpyrimidine-2,4-dione Chemical compound O=C1NC(=O)C(C)=CN1C1O[C@H](CO)[C@@H](N=[N+]=[N-])C1 HBOMLICNUCNMMY-KJFJCRTCSA-N 0.000 description 1
- MWZDIEIXRBWPLG-UHFFFAOYSA-N 1-methyl-1,2,4-triazole Chemical compound CN1C=NC=N1 MWZDIEIXRBWPLG-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- BLRHMMGNCXNXJL-UHFFFAOYSA-N 1-methylindole Chemical compound C1=CC=C2N(C)C=CC2=C1 BLRHMMGNCXNXJL-UHFFFAOYSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- UFLWECJWSGWVHB-UHFFFAOYSA-N 1H-carbazole Chemical compound C1=CC=C2C3=CC=CCC3=NC2=C1 UFLWECJWSGWVHB-UHFFFAOYSA-N 0.000 description 1
- IHWDSEPNZDYMNF-UHFFFAOYSA-N 1H-indol-2-amine Chemical compound C1=CC=C2NC(N)=CC2=C1 IHWDSEPNZDYMNF-UHFFFAOYSA-N 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- LJVQHXICFCZRJN-UHFFFAOYSA-N 1h-1,2,4-triazole-5-carboxylic acid Chemical compound OC(=O)C1=NC=NN1 LJVQHXICFCZRJN-UHFFFAOYSA-N 0.000 description 1
- KOPFEFZSAMLEHK-UHFFFAOYSA-N 1h-pyrazole-5-carboxylic acid Chemical compound OC(=O)C=1C=CNN=1 KOPFEFZSAMLEHK-UHFFFAOYSA-N 0.000 description 1
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 1
- JWYUFVNJZUSCSM-UHFFFAOYSA-N 2-aminobenzimidazole Chemical compound C1=CC=C2NC(N)=NC2=C1 JWYUFVNJZUSCSM-UHFFFAOYSA-N 0.000 description 1
- AYPSHJCKSDNETA-UHFFFAOYSA-N 2-chloro-1h-benzimidazole Chemical compound C1=CC=C2NC(Cl)=NC2=C1 AYPSHJCKSDNETA-UHFFFAOYSA-N 0.000 description 1
- LDZYRENCLPUXAX-UHFFFAOYSA-N 2-methyl-1h-benzimidazole Chemical compound C1=CC=C2NC(C)=NC2=C1 LDZYRENCLPUXAX-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- WLAMNBDJUVNPJU-UHFFFAOYSA-N 2-methylbutyric acid Chemical compound CCC(C)C(O)=O WLAMNBDJUVNPJU-UHFFFAOYSA-N 0.000 description 1
- CVKMFSAVYPAZTQ-UHFFFAOYSA-N 2-methylhexanoic acid Chemical compound CCCCC(C)C(O)=O CVKMFSAVYPAZTQ-UHFFFAOYSA-N 0.000 description 1
- FUOZJYASZOSONT-UHFFFAOYSA-N 2-propan-2-yl-1h-imidazole Chemical compound CC(C)C1=NC=CN1 FUOZJYASZOSONT-UHFFFAOYSA-N 0.000 description 1
- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2h-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- MLMQPDHYNJCQAO-UHFFFAOYSA-N 3,3-dimethylbutyric acid Chemical compound CC(C)(C)CC(O)=O MLMQPDHYNJCQAO-UHFFFAOYSA-N 0.000 description 1
- HTAVZCVYBKYBBM-UHFFFAOYSA-N 3,5-diheptyl-1,2,4-triazol-4-amine Chemical compound CCCCCCCC1=NN=C(CCCCCCC)N1N HTAVZCVYBKYBBM-UHFFFAOYSA-N 0.000 description 1
- NYPYHUZRZVSYKL-ZETCQYMHSA-N 3,5-diiodo-L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC(I)=C(O)C(I)=C1 NYPYHUZRZVSYKL-ZETCQYMHSA-N 0.000 description 1
- MIIKMZAVLKMOFM-UHFFFAOYSA-N 3,5-dimethyl-1,2,4-triazol-4-amine Chemical compound CC1=NN=C(C)N1N MIIKMZAVLKMOFM-UHFFFAOYSA-N 0.000 description 1
- QQHNFZBYCQMAOD-UHFFFAOYSA-N 3,5-dipropyl-1,2,4-triazol-4-amine Chemical compound CCCC1=NN=C(CCC)N1N QQHNFZBYCQMAOD-UHFFFAOYSA-N 0.000 description 1
- BRMWTNUJHUMWMS-UHFFFAOYSA-N 3-Methylhistidine Natural products CN1C=NC(CC(N)C(O)=O)=C1 BRMWTNUJHUMWMS-UHFFFAOYSA-N 0.000 description 1
- FMWHPEKDAPOYOE-UHFFFAOYSA-N 3-oxopentanamide Chemical compound CCC(=O)CC(N)=O FMWHPEKDAPOYOE-UHFFFAOYSA-N 0.000 description 1
- ZOPIBCDDKMAEII-UHFFFAOYSA-N 4-(1,2,4-triazol-1-yl)phenol Chemical compound C1=CC(O)=CC=C1N1N=CN=C1 ZOPIBCDDKMAEII-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- DFYGYTNMHPUJBY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane-1-thiol Chemical compound SCCCC(C(OC)(OC)OC)CCCCCCCC DFYGYTNMHPUJBY-UHFFFAOYSA-N 0.000 description 1
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- MVPKIPGHRNIOPT-UHFFFAOYSA-N 5,6-dimethyl-2h-benzotriazole Chemical compound C1=C(C)C(C)=CC2=NNN=C21 MVPKIPGHRNIOPT-UHFFFAOYSA-N 0.000 description 1
- LJUQGASMPRMWIW-UHFFFAOYSA-N 5,6-dimethylbenzimidazole Chemical compound C1=C(C)C(C)=CC2=C1NC=N2 LJUQGASMPRMWIW-UHFFFAOYSA-N 0.000 description 1
- QGLMSZQOJZAPSZ-UHFFFAOYSA-N 5-benzyl-1h-1,2,4-triazol-3-amine Chemical compound NC1=NNC(CC=2C=CC=CC=2)=N1 QGLMSZQOJZAPSZ-UHFFFAOYSA-N 0.000 description 1
- XXAMCWVPBITOGA-UHFFFAOYSA-N 5-bromo-3-nitro-1h-1,2,4-triazole Chemical compound [O-][N+](=O)C1=NNC(Br)=N1 XXAMCWVPBITOGA-UHFFFAOYSA-N 0.000 description 1
- PZBQVZFITSVHAW-UHFFFAOYSA-N 5-chloro-2h-benzotriazole Chemical compound C1=C(Cl)C=CC2=NNN=C21 PZBQVZFITSVHAW-UHFFFAOYSA-N 0.000 description 1
- MEOLGLWWWZJLAR-UHFFFAOYSA-N 5-methyl-1H-indole 6-methyl-1H-indole Chemical compound Cc1ccc2[nH]ccc2c1.Cc1ccc2cc[nH]c2c1 MEOLGLWWWZJLAR-UHFFFAOYSA-N 0.000 description 1
- FJRZOOICEHBAED-UHFFFAOYSA-N 5-methyl-1h-1,2,4-triazol-3-amine Chemical compound CC1=NNC(N)=N1 FJRZOOICEHBAED-UHFFFAOYSA-N 0.000 description 1
- PZKFSRWSQOQYNR-UHFFFAOYSA-N 5-methyl-1h-1,2,4-triazole Chemical compound CC1=NC=NN1 PZKFSRWSQOQYNR-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- KUEFXPHXHHANKS-UHFFFAOYSA-N 5-nitro-1h-1,2,4-triazole Chemical compound [O-][N+](=O)C1=NC=NN1 KUEFXPHXHHANKS-UHFFFAOYSA-N 0.000 description 1
- AOCDQWRMYHJTMY-UHFFFAOYSA-N 5-nitro-2h-benzotriazole Chemical compound C1=C([N+](=O)[O-])C=CC2=NNN=C21 AOCDQWRMYHJTMY-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- ZMAXXOYJWZZQBK-UHFFFAOYSA-N 5334-40-7 Chemical compound OC(=O)C1=NNC=C1[N+]([O-])=O ZMAXXOYJWZZQBK-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- KGWPHCDTOLQQEP-UHFFFAOYSA-N 7-methylindole Chemical compound CC1=CC=CC2=C1NC=C2 KGWPHCDTOLQQEP-UHFFFAOYSA-N 0.000 description 1
- NWXBAYMTKHBJRG-UHFFFAOYSA-N 8H-carbazol-4-amine Chemical compound C1C=CC=C2C=3C(=CC=CC=3N=C12)N NWXBAYMTKHBJRG-UHFFFAOYSA-N 0.000 description 1
- OQLZINXFSUDMHM-UHFFFAOYSA-N Acetamidine Chemical compound CC(N)=N OQLZINXFSUDMHM-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- 239000004475 Arginine Substances 0.000 description 1
- DCXYFEDJOCDNAF-UHFFFAOYSA-N Asparagine Natural products OC(=O)C(N)CC(N)=O DCXYFEDJOCDNAF-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- CQNZHHDHFGMLAD-UHFFFAOYSA-N C(C)(=O)C.C(C1=CC=CC=C1)(=N)N Chemical compound C(C)(=O)C.C(C1=CC=CC=C1)(=N)N CQNZHHDHFGMLAD-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YPWSLBHSMIKTPR-UHFFFAOYSA-N Cystathionine Natural products OC(=O)C(N)CCSSCC(N)C(O)=O YPWSLBHSMIKTPR-UHFFFAOYSA-N 0.000 description 1
- ILRYLPWNYFXEMH-UHFFFAOYSA-N D-cystathionine Natural products OC(=O)C(N)CCSCC(N)C(O)=O ILRYLPWNYFXEMH-UHFFFAOYSA-N 0.000 description 1
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 1
- XUIIKFGFIJCVMT-GFCCVEGCSA-N D-thyroxine Chemical compound IC1=CC(C[C@@H](N)C(O)=O)=CC(I)=C1OC1=CC(I)=C(O)C(I)=C1 XUIIKFGFIJCVMT-GFCCVEGCSA-N 0.000 description 1
- DISMWQOPWXBXLZ-UHFFFAOYSA-N FC(C(C)=O)(F)F.C(C1=CC=CC=C1)(=N)N Chemical compound FC(C(C)=O)(F)F.C(C1=CC=CC=C1)(=N)N DISMWQOPWXBXLZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-UHFFFAOYSA-N Glutamic acid Natural products OC(=O)C(N)CCC(O)=O WHUUTDBJXJRKMK-UHFFFAOYSA-N 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- PMMYEEVYMWASQN-DMTCNVIQSA-N Hydroxyproline Chemical compound O[C@H]1CN[C@H](C(O)=O)C1 PMMYEEVYMWASQN-DMTCNVIQSA-N 0.000 description 1
- AHLPHDHHMVZTML-BYPYZUCNSA-N L-Ornithine Chemical compound NCCC[C@H](N)C(O)=O AHLPHDHHMVZTML-BYPYZUCNSA-N 0.000 description 1
- ODKSFYDXXFIFQN-BYPYZUCNSA-P L-argininium(2+) Chemical compound NC(=[NH2+])NCCC[C@H]([NH3+])C(O)=O ODKSFYDXXFIFQN-BYPYZUCNSA-P 0.000 description 1
- DCXYFEDJOCDNAF-REOHCLBHSA-N L-asparagine Chemical compound OC(=O)[C@@H](N)CC(N)=O DCXYFEDJOCDNAF-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- RHGKLRLOHDJJDR-BYPYZUCNSA-N L-citrulline Chemical compound NC(=O)NCCC[C@H]([NH3+])C([O-])=O RHGKLRLOHDJJDR-BYPYZUCNSA-N 0.000 description 1
- ILRYLPWNYFXEMH-WHFBIAKZSA-N L-cystathionine Chemical compound [O-]C(=O)[C@@H]([NH3+])CCSC[C@H]([NH3+])C([O-])=O ILRYLPWNYFXEMH-WHFBIAKZSA-N 0.000 description 1
- LEVWYRKDKASIDU-IMJSIDKUSA-N L-cystine Chemical compound [O-]C(=O)[C@@H]([NH3+])CSSC[C@H]([NH3+])C([O-])=O LEVWYRKDKASIDU-IMJSIDKUSA-N 0.000 description 1
- GGLZPLKKBSSKCX-YFKPBYRVSA-N L-ethionine Chemical compound CCSCC[C@H](N)C(O)=O GGLZPLKKBSSKCX-YFKPBYRVSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- ZDXPYRJPNDTMRX-VKHMYHEASA-N L-glutamine Chemical compound OC(=O)[C@@H](N)CCC(N)=O ZDXPYRJPNDTMRX-VKHMYHEASA-N 0.000 description 1
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 description 1
- AGPKZVBTJJNPAG-WHFBIAKZSA-N L-isoleucine Chemical compound CC[C@H](C)[C@H](N)C(O)=O AGPKZVBTJJNPAG-WHFBIAKZSA-N 0.000 description 1
- DWPCPZJAHOETAG-IMJSIDKUSA-N L-lanthionine Chemical compound OC(=O)[C@@H](N)CSC[C@H](N)C(O)=O DWPCPZJAHOETAG-IMJSIDKUSA-N 0.000 description 1
- ROHFNLRQFUQHCH-YFKPBYRVSA-N L-leucine Chemical compound CC(C)C[C@H](N)C(O)=O ROHFNLRQFUQHCH-YFKPBYRVSA-N 0.000 description 1
- KDXKERNSBIXSRK-YFKPBYRVSA-N L-lysine Chemical compound NCCCC[C@H](N)C(O)=O KDXKERNSBIXSRK-YFKPBYRVSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- COLNVLDHVKWLRT-QMMMGPOBSA-N L-phenylalanine Chemical compound OC(=O)[C@@H](N)CC1=CC=CC=C1 COLNVLDHVKWLRT-QMMMGPOBSA-N 0.000 description 1
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 description 1
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical compound OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 description 1
- ROHFNLRQFUQHCH-UHFFFAOYSA-N Leucine Natural products CC(C)CC(N)C(O)=O ROHFNLRQFUQHCH-UHFFFAOYSA-N 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- JDHILDINMRGULE-LURJTMIESA-N N(pros)-methyl-L-histidine Chemical compound CN1C=NC=C1C[C@H](N)C(O)=O JDHILDINMRGULE-LURJTMIESA-N 0.000 description 1
- BRMWTNUJHUMWMS-LURJTMIESA-N N(tele)-methyl-L-histidine Chemical compound CN1C=NC(C[C@H](N)C(O)=O)=C1 BRMWTNUJHUMWMS-LURJTMIESA-N 0.000 description 1
- ATWLCPHWYPSRBQ-UHFFFAOYSA-N N-Methylacetoacetamide Chemical compound CNC(=O)CC(C)=O ATWLCPHWYPSRBQ-UHFFFAOYSA-N 0.000 description 1
- RHGKLRLOHDJJDR-UHFFFAOYSA-N Ndelta-carbamoyl-DL-ornithine Natural products OC(=O)C(N)CCCNC(N)=O RHGKLRLOHDJJDR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- AHLPHDHHMVZTML-UHFFFAOYSA-N Orn-delta-NH2 Natural products NCCCC(N)C(O)=O AHLPHDHHMVZTML-UHFFFAOYSA-N 0.000 description 1
- UTJLXEIPEHZYQJ-UHFFFAOYSA-N Ornithine Natural products OC(=O)C(C)CCCN UTJLXEIPEHZYQJ-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Natural products C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 108010077895 Sarcosine Proteins 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UZMAPBJVXOGOFT-UHFFFAOYSA-N Syringetin Natural products COC1=C(O)C(OC)=CC(C2=C(C(=O)C3=C(O)C=C(O)C=C3O2)O)=C1 UZMAPBJVXOGOFT-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007997 Tricine buffer Substances 0.000 description 1
- QIVBCDIJIAJPQS-UHFFFAOYSA-N Tryptophan Natural products C1=CC=C2C(CC(N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-UHFFFAOYSA-N 0.000 description 1
- KGNGTSCIQCLKEH-UHFFFAOYSA-N Vicine Natural products N1C(N)=NC(=O)C(OC2C(C(O)C(O)C(CO)O2)O)=C1N KGNGTSCIQCLKEH-UHFFFAOYSA-N 0.000 description 1
- KGNGTSCIQCLKEH-SYCVNHKBSA-N Vicine Chemical compound N1C(N)=NC(=O)C(O[C@H]2[C@@H]([C@@H](O)[C@H](O)[C@@H](CO)O2)O)=C1N KGNGTSCIQCLKEH-SYCVNHKBSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229940022663 acetate Drugs 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- DYRDKSSFIWVSNM-UHFFFAOYSA-N acetoacetanilide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1 DYRDKSSFIWVSNM-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- ODKSFYDXXFIFQN-UHFFFAOYSA-N arginine Natural products OC(=O)C(N)CCCNC(N)=N ODKSFYDXXFIFQN-UHFFFAOYSA-N 0.000 description 1
- 235000009582 asparagine Nutrition 0.000 description 1
- 229960001230 asparagine Drugs 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- XSCHRSMBECNVNS-UHFFFAOYSA-N benzopyrazine Natural products N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 1
- JCXKHYLLVKZPKE-UHFFFAOYSA-N benzotriazol-1-amine Chemical compound C1=CC=C2N(N)N=NC2=C1 JCXKHYLLVKZPKE-UHFFFAOYSA-N 0.000 description 1
- BJFLSHMHTPAZHO-UHFFFAOYSA-N benzotriazole Chemical compound [CH]1C=CC=C2N=NN=C21 BJFLSHMHTPAZHO-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- KYPIPCWVZKRJDD-UHFFFAOYSA-N benzotriazole-1-carboxylic acid Chemical compound C1=CC=C2N(C(=O)O)N=NC2=C1 KYPIPCWVZKRJDD-UHFFFAOYSA-N 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 238000003339 best practice Methods 0.000 description 1
- 229940000635 beta-alanine Drugs 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- GBFLZEXEOZUWRN-UHFFFAOYSA-N carbocisteine Chemical compound OC(=O)C(N)CSCC(O)=O GBFLZEXEOZUWRN-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 1
- 229960002173 citrulline Drugs 0.000 description 1
- 235000013477 citrulline Nutrition 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229960003624 creatine Drugs 0.000 description 1
- 239000006046 creatine Substances 0.000 description 1
- 229940109239 creatinine Drugs 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229960003067 cystine Drugs 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- KCFYHBSOLOXZIF-UHFFFAOYSA-N dihydrochrysin Natural products COC1=C(O)C(OC)=CC(C2OC3=CC(O)=CC(O)=C3C(=O)C2)=C1 KCFYHBSOLOXZIF-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 108700003601 dimethylglycine Proteins 0.000 description 1
- PMMYEEVYMWASQN-UHFFFAOYSA-N dl-hydroxyproline Natural products OC1C[NH2+]C(C([O-])=O)C1 PMMYEEVYMWASQN-UHFFFAOYSA-N 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229960003692 gamma aminobutyric acid Drugs 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 229960002743 glutamine Drugs 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 229960002885 histidine Drugs 0.000 description 1
- 229960002591 hydroxyproline Drugs 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229940045996 isethionic acid Drugs 0.000 description 1
- AWJUIBRHMBBTKR-UHFFFAOYSA-N iso-quinoline Natural products C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 229960003646 lysine Drugs 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- DWPCPZJAHOETAG-UHFFFAOYSA-N meso-lanthionine Natural products OC(=O)C(N)CSCC(N)C(O)=O DWPCPZJAHOETAG-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 229960004452 methionine Drugs 0.000 description 1
- QMPFMODFBNEYJH-UHFFFAOYSA-N methyl 1h-1,2,4-triazole-5-carboxylate Chemical compound COC(=O)C1=NC=NN1 QMPFMODFBNEYJH-UHFFFAOYSA-N 0.000 description 1
- XJMIXEAZMCTAGH-UHFFFAOYSA-N methyl 3-oxopentanoate Chemical compound CCC(=O)CC(=O)OC XJMIXEAZMCTAGH-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- DSZXBVTWQFXLHY-UHFFFAOYSA-N n'-(2-hydroxyethyl)ethanimidamide Chemical compound CC(N)=NCCO DSZXBVTWQFXLHY-UHFFFAOYSA-N 0.000 description 1
- KDTWOFBQQCILRP-UHFFFAOYSA-N n'-(2-methylphenyl)ethanimidamide Chemical compound CC(N)=NC1=CC=CC=C1C KDTWOFBQQCILRP-UHFFFAOYSA-N 0.000 description 1
- FBPHZQBQWZDQGC-UHFFFAOYSA-N n'-(4-chlorophenyl)ethanimidamide Chemical compound CC(=N)NC1=CC=C(Cl)C=C1 FBPHZQBQWZDQGC-UHFFFAOYSA-N 0.000 description 1
- NRXRTIIMUZLBRR-UHFFFAOYSA-N n'-(4-methoxyphenyl)ethanimidamide Chemical compound COC1=CC=C(N=C(C)N)C=C1 NRXRTIIMUZLBRR-UHFFFAOYSA-N 0.000 description 1
- PAXRVGDTBDATMF-UHFFFAOYSA-N n,n-dimethylethanimidamide Chemical compound CN(C)C(C)=N PAXRVGDTBDATMF-UHFFFAOYSA-N 0.000 description 1
- 229940078490 n,n-dimethylglycine Drugs 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- KOJIAQAVFFLLGJ-UHFFFAOYSA-N octyl 3-oxopentanoate Chemical compound CCCCCCCCOC(=O)CC(=O)CC KOJIAQAVFFLLGJ-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229960003104 ornithine Drugs 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 229960005190 phenylalanine Drugs 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- JWVCLYRUEFBMGU-UHFFFAOYSA-N quinazoline Chemical compound N1=CN=CC2=CC=CC=C21 JWVCLYRUEFBMGU-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229960003080 taurine Drugs 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 229940034208 thyroxine Drugs 0.000 description 1
- XUIIKFGFIJCVMT-UHFFFAOYSA-N thyroxine-binding globulin Natural products IC1=CC(CC([NH3+])C([O-])=O)=CC(I)=C1OC1=CC(I)=C(O)C(I)=C1 XUIIKFGFIJCVMT-UHFFFAOYSA-N 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 229940005605 valeric acid Drugs 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- DYWSVUBJGFTOQC-UHFFFAOYSA-N xi-2-Ethylheptanoic acid Chemical compound CCCCCC(CC)C(O)=O DYWSVUBJGFTOQC-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
本發明為有關適合於研磨具有相變合金之研磨對象物之研磨用組成物。 The present invention relates to a polishing composition suitable for polishing an object to be polished having a phase change alloy.
PRAM(相變隨機存取記憶體)裝置(已知亦作為雙向記憶體裝置或PCRAM裝置)中，用於電子記憶用途在絕緣性非晶質相與傳導性結晶性相之間，係利用著能電性切換之相變材料(PCM)。適合於此等用途之典型相變材料，係以週期表之各種的VIB族(硫屬化物(chalcogenide)，例如Te或Po)及VB族(例如Sb)元素，與In、Ge、Ga、Sn或Ag等之1種或複數種之金屬元素之組合而被利用著。特別適合的相變材料為鍺(Ge)-銻(Sb)-碲(Te)合金(GST合金)。此等材料為依附於(depend on)加熱/冷卻速度、溫度、及時間，而可使物理狀態可逆性地變化。其他適合的合金為包含銻化銦(InSb)。PRAM裝置中的記憶資訊會依不同物理之相或狀態之傳導特性，使損失成為最小地予以保存。 A PRAM (Phase Change Random Access Memory) device (known as a bidirectional memory device or a PCRAM device) is used for electronic memory applications between an insulating amorphous phase and a conductive crystalline phase. Phase change material (PCM) that can be electrically switched. Typical phase change materials suitable for such applications are various VIB families (chalcogenide, such as Te or Po) and VB (for example, Sb) elements of the periodic table, and In, Ge, Ga, Sn It is used in combination with one or a plurality of metal elements such as Ag. A particularly suitable phase change material is a bismuth (Ge)-bismuth (Sb)-tellurium (Te) alloy (GST alloy). These materials are dependent on the heating/cooling rate, temperature, and time, and the physical state can be reversibly changed. Other suitable alloys include indium antimonide (InSb). The memory information in the PRAM device is based on the conduction characteristics of different physical phases or states, so that the loss is minimized.
作為研磨半導體基材(例如，積體電路)之含有金屬之表面之方法，已知有化學機械研磨(CMP)。在CMP所使用的研磨用組成物，典型為含有研磨粒、氧化劑、錯化劑，並有效地利用蝕刻來進行研磨。 As a method of polishing a metal-containing surface of a semiconductor substrate (for example, an integrated circuit), chemical mechanical polishing (CMP) is known. The polishing composition used in CMP typically contains abrasive grains, an oxidizing agent, and a distoring agent, and is effectively polished by etching.
如此般的CMP，可利用於用來製作使用相變材料的記憶裝置。然而，不似由單一成分諸如銅(Cu)或鎢(W)所成的以往的金屬層，被研磨之相變材料係將硫(S)、鈰(Ce)、鍺(Ge)、銻(Sb)、碲(Te)、銀(Ag)、銦(In)、錫(Sn)、鎵(Ga)等，以結晶相及非結晶質相為可逆性進行相變化之特定比例混合而成，大多的相變材料(例如，GST)之物理性質，相較於PCM晶片中所利用的其他材料為「軟質」之點等，由於與以往的金屬層材料之特性不同，故難以將現今用來研磨含有金屬之表面之研磨用組成物直接予以適用。 Such CMP can be used to make memory devices using phase change materials. However, unlike conventional metal layers formed of a single component such as copper (Cu) or tungsten (W), the phase change material to be ground is sulfur (S), cerium (Ce), germanium (Ge), germanium ( Sb), tellurium (Te), silver (Ag), indium (In), tin (Sn), gallium (Ga), etc., in which a crystal phase and an amorphous phase are reversibly converted to a specific ratio of phase changes. The physical properties of most phase change materials (for example, GST) are "soft" compared to other materials used in PCM wafers. Due to the characteristics of the conventional metal layer materials, it is difficult to use them today. The polishing composition for polishing a metal-containing surface is directly applicable.
如此般狀況之中，對於適合研磨具有相變合金之研磨對象物之研磨用組成物，已進行各種之檢討。例如，專利文獻1及2中已揭示一種以研磨具有相變合金之研磨對象物作為目的之研磨用組成物，其係包含研磨粒、錯化劑、水及任意的氧化劑。此等之發明為將用來研磨以往含有金屬之表面的典型研磨用組成物予以改良，使成為能降低表面缺陷或相變材料之殘渣之研磨用組成物。但，僅以此等發明時，作為以研磨具有相變合金之研磨對象物為目的之研磨用組成物而言為不充分，乃期待進一步的改良。 In such a situation, various investigations have been made on a polishing composition suitable for polishing an object to be polished having a phase change alloy. For example, Patent Literatures 1 and 2 disclose a polishing composition for polishing an object to be polished having a phase change alloy, which comprises abrasive grains, a neutralizing agent, water, and an optional oxidizing agent. These inventions are improved by using a typical polishing composition for polishing a conventional metal-containing surface to form a polishing composition capable of reducing surface defects or residues of a phase change material. However, in the case of the invention, the polishing composition for polishing the object to be polished of the phase change alloy is insufficient, and further improvement is expected.
〔專利文獻1〕日本特表2010-534934號公報 [Patent Document 1] Japanese Patent Publication No. 2010-534934
〔專利文獻2〕日本特表2009-525615號公報 [Patent Document 2] Japanese Patent Publication No. 2009-525615
在此，本發明之目的，係以提供一種在研磨具有相變合金之研磨對象物之用途為可適合使用的研磨用組成物。特別是提供，一種可抑制凹坑(recess)產生的研磨用組成物。即，將用來研磨以往含有金屬之表面的典型研磨用組成物予以改良時，對於相變合金會引起過度之蝕刻，其結果方面會產生凹坑，並發現所謂的使原本應為殘留的凸塊部分溶出之新課題，本發明即以提供能解決此等課題的研磨用組成物。 Here, an object of the present invention is to provide a polishing composition which can be suitably used for polishing a polishing object having a phase change alloy. In particular, a polishing composition capable of suppressing generation of recesses is provided. That is, when a typical polishing composition for polishing a conventional metal-containing surface is modified, excessive etching is caused to the phase change alloy, and as a result, pits are formed, and a so-called convex which is supposed to be residual is found. In the new problem of the partial dissolution of the block, the present invention provides a polishing composition capable of solving such problems.
本發明團隊在經過精心探討後，結果發現到一種研磨用組成物，其係藉由包含選自於下述化合物之至少1種以上，其中前述化合物為分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物，而可為於具有相變合金之研磨對象物抑制凹坑之產生。 After careful investigation, the present inventors have found a polishing composition comprising at least one selected from the group consisting of two carbonyl groups contained in the molecule as a bond. The compound of the carbon atoms at the first and third positions in the molecule can suppress the generation of pits in the object to be polished with the phase change alloy.
即，本發明之要旨為如同下述。 That is, the gist of the present invention is as follows.
<1>一種研磨用組成物，其係使用於研磨具有相變合金之研磨對象物之用途之研磨用組成物，其特徵為包含選 自於下述化合物之至少1種以上，而前述化合物為分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物。 <1> A polishing composition for polishing a polishing object having a phase change alloy, wherein the polishing composition is characterized by The compound is at least one of the following compounds, and the compound is a compound in which two carbonyl groups contained in the molecule are carbon atoms bonded to the first and third positions in the molecule.
<2>如上述<1>之研磨用組成物，其中具有上述特定構造之化合物為一般式(1)所示的β-二酮化合物。 <2> The polishing composition according to the above <1>, wherein the compound having the specific structure described above is a β-diketone compound represented by the general formula (1).
<3>如上述<1>之研磨用組成物，其中具有上述特定構造之化合物為式(2)所示的β-酮醯胺化合物。 <3> The polishing composition according to the above <1>, wherein the compound having the specific structure described above is a β-ketoxime compound represented by the formula (2).
<4>如上述<1>之研磨用組成物，其中具有上述特定構造之化合物為式(3)所示的β-酮酯化合物。 <4> The polishing composition according to the above <1>, wherein the compound having the specific structure described above is a β-ketoester compound represented by the formula (3).
<5>如上述<1>~<4>中任一項之研磨用組成物，其係進而包含研磨粒。 The polishing composition according to any one of the above-mentioned items, further comprising the abrasive particles.
<6>如上述<5>之研磨用組成物，其中研磨粒為膠體矽石。 <6> The polishing composition according to the above <5>, wherein the abrasive grains are colloidal vermiculite.
<7>如上述<1>~<6>中任一項之研磨用組成物，其係使用於研磨具有GST作為相變合金之研磨對象物之用途。 <7> The polishing composition according to any one of <1> to <6>, which is used for polishing an object to be polished having GST as a phase change alloy.
<8>一種研磨方法，其特徵係使用上述<1>~<6>中任一項之研磨用組成物來研磨具有相變合金之研磨對象物之表面。 <8> A polishing method, wherein the surface of the object to be polished having the phase change alloy is polished by using the polishing composition according to any one of <1> to <6>.
<9>一種基板之製造方法，其特徵係具有使用上述<1>~<6>中任一項之之研磨用組成物來研磨具有相變合金之研磨對象物之表面之步驟。 <9> A method of producing a substrate, comprising the step of polishing the surface of the object to be polished having the phase change alloy by using the polishing composition according to any one of the above items <1> to <6>.
藉由本發明，可提供一種研磨用組成物，其係能適合使用於研磨具有相變合金之研磨對象物之用途。特別是提供一種有效抑制凹坑之產生的研磨用組成物。 According to the present invention, it is possible to provide a polishing composition which can be suitably used for polishing an object to be polished having a phase change alloy. In particular, a polishing composition for effectively suppressing generation of pits is provided.
以下為說明本發明之一實施形態。 Hereinafter, an embodiment of the present invention will be described.
本實施形態之研磨用組成物為包含選自於下述化合物之至少1種以上，而前述化合物為分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物。然後，本實施形態之研磨用組成物係提供作為一種有效抑制凹坑之產生的研磨用組成物。所謂的凹坑，係指由於研磨用組成物中所包含之成分，使研磨對象物，特別是相變合金引起過度蝕刻，而溶出之缺陷。 The polishing composition of the present embodiment contains at least one selected from the group consisting of a compound in which two carbonyl groups contained in the molecule are carbons bonded to the first and third positions in the molecule. Atom compound. Then, the polishing composition of the present embodiment is provided as a polishing composition which effectively suppresses generation of pits. The term "pit" refers to a defect in which an object to be polished, in particular, a phase change alloy, is excessively etched due to a component contained in the polishing composition, and is eluted.
此研磨用組成物為使用於研磨具有相變合金之研磨對象物之用途。相變合金，在PRAM(相變隨機存取記憶體)裝置(已知亦作為雙向記憶體裝置或PCRAM裝置)中，用於電子記憶用途在絕緣性非晶質相與傳導性結晶性相之間，係利用著能電性切換之材料。作為適合於此等用途之相變合金，係以週期表之各種的VIB族(硫屬化物，例如Te或Po)及VB族(例如Sb)元素，與In、Ge、Ga、Sn或Ag等之1種或複數種之金屬元素之組合而被利用著。特別適合的相變材料為鍺(Ge)-銻(Sb)-碲(Te)合金(GST合金)。 This polishing composition is used for polishing an object to be polished having a phase change alloy. A phase change alloy, in a PRAM (Phase Change Random Access Memory) device (known as a two-way memory device or a PCRAM device), is used for electronic memory applications in an insulating amorphous phase and a conductive crystalline phase. In the meantime, the material that can be electrically switched is utilized. As phase change alloys suitable for such applications, various VIB families (chalcogenides such as Te or Po) and VB (for example, Sb) elements, and In, Ge, Ga, Sn or Ag, etc., are used in the periodic table. One or a combination of a plurality of metal elements is utilized. A particularly suitable phase change material is a bismuth (Ge)-bismuth (Sb)-tellurium (Te) alloy (GST alloy).
如同前述，作為研磨半導體基材(例如積體電路)之 含有金屬之表面的方法，已知有CMP。在CMP所使用的研磨用組成物，典型為含有研磨粒、氧化劑、錯化劑，而有效地利用蝕刻來進行研磨。如此般的CMP，可利用於用來製作使用相變材料的記憶裝置。然而，不似由單一成分(例如Cu、W)所成的以往的金屬層，被研磨之相變材料係將S、Ce、Ge、Sb、Te、Ag、In、Sn、Ga等，以結晶相及非結晶質相為可逆性進行相變化之特定比例混合而成，大多的相變材料(例如，GST)之物理性質，相較於PCM晶片中所利用的其他材料為「軟質」之點等，由於與以往的金屬層材料之特性不同，故難以將用來研磨以往典型的含有金屬之表面之研磨用組成物直接予以適用。特別是，將用來研磨以往含有金屬之表面的典型研磨用組成物予以改良時，對於相變合金會引起過度之蝕刻，其結果方面會產生凹坑。又，依GST之種類而異，有以水亦能產生蝕刻者。 As described above, as a semiconductor substrate (for example, an integrated circuit) A method of including a metal surface is known as CMP. The polishing composition used in CMP typically contains abrasive grains, an oxidizing agent, and a distoring agent, and is effectively polished by etching. Such CMP can be used to make memory devices using phase change materials. However, unlike a conventional metal layer formed of a single component (for example, Cu or W), the phase change material to be polished is S, Ce, Ge, Sb, Te, Ag, In, Sn, Ga, etc., to be crystallized. The phase and the amorphous phase are reversibly mixed in a specific ratio of phase changes. The physical properties of most phase change materials (eg, GST) are "soft" compared to other materials used in PCM wafers. Since it is different from the characteristics of the conventional metal layer material, it is difficult to directly apply the polishing composition for polishing a conventional metal-containing surface. In particular, when a typical polishing composition for polishing a conventional metal-containing surface is modified, excessive etching is caused to the phase change alloy, and as a result, pits are generated. Also, depending on the type of GST, there is an etcher that can also produce water.
研磨用組成物，作為藉由如後述所說明的機制而對於相變合金為具有金屬防蝕效果之化合物，係含有選自於下述化合物之至少1種以上，而前述化合物為分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物。雖凹坑之產生之機制尚不明確，但係認為如下：因以往的研磨用組成物中的添加劑(特別是錯化劑)等， 使對於相變合金引起過度的氧化反應，其結果方面由於相變合金之氧化物會溶出，因而產生了凹坑。相較於此，分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物，係相變合金與化合物(其係分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物)之分子內的2個羰基會鍵結而形成不溶性的錯合物，因而於相變合金表面形成不溶性的脆性膜。其結果認為，抑制了因以往的研磨用組成物中的添加劑(特別是錯化劑)等之對於相變合金之過度蝕刻，而可抑制凹坑。 The composition for polishing is a compound having a metal anticorrosive effect on a phase change alloy by a mechanism as described later, and contains at least one selected from the group consisting of the following compounds, and the compound is contained in the molecule. The two carbonyl groups are compounds which are bonded to the carbon atoms of the first and third positions in the molecule. Although the mechanism of the generation of pits is not clear, it is considered as follows: due to additives (especially, a modifier) in the conventional polishing composition, Excessive oxidation reaction is caused to the phase change alloy, and as a result, pits are generated due to dissolution of the oxide of the phase change alloy. In contrast, a compound in which two carbonyl groups contained in a molecule are carbon atoms bonded to the first and third positions in the molecule is a phase change alloy and a compound (the two carbonyl groups contained in the molecule) The two carbonyl groups in the molecule of the compound which is bonded to the carbon atoms at the first and third positions in the molecule are bonded to each other to form an insoluble complex, and an insoluble brittle film is formed on the surface of the phase change alloy. As a result, it is considered that excessive etching of the phase change alloy such as an additive (particularly, a distorting agent) in the conventional polishing composition can be suppressed, and pits can be suppressed.
研磨用組成物中所包含的分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物，列舉例如下述式(1)~式(3)所示的化合物，其中下述一般式(1)所示的β-二酮化合物：
研磨用組成物中所包含的分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物，當該化合物為前述一般式(1)所示的β-二酮化合物時，具體舉例如乙醯丙酮、三氟乙醯丙酮、丙醯丙酮、苯甲醯丙酮、苯甲醯三氟丙酮、二苯甲醯甲烷。此等可單獨使用1 種，亦可組合2種以上使用。 The two carbonyl groups contained in the molecule contained in the polishing composition are compounds bonded to the first and third carbon atoms in the molecule, and the compound is β represented by the above general formula (1). Specific examples of the diketone compound include acetamidineacetone, trifluoroacetoneacetone, acetone, acetone, benzamidine acetone, benzamidine trifluoroacetone, and benzotrimethane. These can be used alone 1 It is also possible to use two or more types in combination.
研磨用組成物中所包含的分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物，當該化合物為前述一般式(2)所示的β-酮醯胺化合物時，具體舉例如N-甲基乙醯乙醯胺(N-methylacetoacetamide)、N，N-二甲基乙醯乙醯胺、N-(2-羥基乙基)乙醯乙醯胺、乙醯乙醯胺苯(acetoacetanilide)、N-(2-甲基苯基)乙醯乙醯胺、N-(4-甲氧基苯基)乙醯乙醯胺、N-(4-氯苯基)乙醯乙醯胺、及3-氧代戊醯胺(3-oxopentanamide)。此等可單獨使用1種，亦可組合2種以上使用。 The two carbonyl groups contained in the molecule contained in the polishing composition are compounds bonded to the first and third carbon atoms in the molecule, and the compound is β represented by the above general formula (2). In the case of a ketoxime compound, for example, N-methylacetoacetamide, N,N-dimethylacetamidine, N-(2-hydroxyethyl)acetamidine B, Indoleamine, acetoacetanilide, N-(2-methylphenyl)acetamidine, N-(4-methoxyphenyl)acetamidine, N-(4 -Chlorophenyl) acetamidine, and 3-oxopentanamide. These may be used alone or in combination of two or more.
研磨用組成物中所包含的分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物，當該化合物為前述一般式(3)所示的β-酮酯化合物時，具體舉例如乙醯乙酸甲酯、乙醯乙酸乙酯、乙醯乙酸辛酯、乙醯乙酸油酯、乙醯乙酸月桂酯、乙醯乙酸十八烷基酯、乙醯乙酸油酯、乙醯乙酸苄酯、3-氧代戊酸甲酯、3-氧代戊酸辛酯。此等可單獨使用1種，亦可組合2種以上使用。 The two carbonyl groups contained in the molecule contained in the polishing composition are compounds bonded to the first and third carbon atoms in the molecule, and the compound is β represented by the above general formula (3). When the ketoester compound is specifically, for example, methyl acetate, ethyl acetate, octyl acetate, ethyl acetate, lauryl acetate, octadecyl acetate, acetamidine. Oil acetate, benzyl acetate, methyl 3-oxopentanoate, octyl 3-oxopentanoate. These may be used alone or in combination of two or more.
研磨用組成物中所包含的分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物，該化合物之含有量之上限較佳為10質量%，又較佳為8質量%，更佳為5質量%。隨著分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物之含有量減少，由於研磨速度會提昇，故宜。 The compound having two carbonyl groups contained in the molecule contained in the polishing composition is a carbon atom bonded to the first and third carbon atoms in the molecule, and the upper limit of the content of the compound is preferably 10% by mass. It is also preferably 8% by mass, more preferably 5% by mass. Since the content of the compound in which two carbonyl groups contained in the molecule are carbon atoms bonded to the first and third positions in the molecule is reduced, the polishing rate is preferably improved.
研磨用組成物中所包含的分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物，該化合物之含有量之下限較佳為0.0001質量%，又較佳為0.001質量%，更佳為0.01質量%。隨著分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物之含有量增加，會抑制蝕刻。其結果由於可抑制凹坑之產生，故宜。 The compound having two carbonyl groups contained in the molecule contained in the polishing composition is a carbon atom bonded to the first and third carbon atoms in the molecule, and the lower limit of the content of the compound is preferably 0.0001% by mass. It is also preferably 0.001% by mass, more preferably 0.01% by mass. As the content of the compound in which two carbonyl groups contained in the molecule are carbon atoms bonded to the first and third positions in the molecule is increased, etching is suppressed. As a result, it is preferable since the generation of pits can be suppressed.
研磨用組成物可進而含有研磨粒。研磨粒可為無機粒子、有機粒子、及有機無機複合粒子中之任一種。作為無機粒子的具體例，例如可列舉出由矽石、氧化鋁、氧化鈰、氧化鈦等之金屬氧化物所構成之粒子，以及氮化矽粒子、碳化矽粒子及氮化硼粒子。作為有機粒子的具體例，例如可列舉出聚甲基丙烯酸甲酯(PMMA)粒子。當中較佳為矽石粒子，特佳為膠體矽石。 The polishing composition may further contain abrasive grains. The abrasive grains may be any of inorganic particles, organic particles, and organic-inorganic composite particles. Specific examples of the inorganic particles include particles composed of metal oxides such as vermiculite, alumina, cerium oxide, and titanium oxide, and cerium nitride particles, cerium carbide particles, and boron nitride particles. Specific examples of the organic particles include polymethyl methacrylate (PMMA) particles. Among them, vermiculite particles are preferred, and colloidal vermiculite is particularly preferred.
研磨粒可經表面改質。一般的膠體矽石，由於在酸性條件下動電勢之值接近於零，所以在酸性條件下，矽石粒子彼此不會相互呈電相斥而容易凝聚。相對於此，即使在酸性條件下動電勢亦具有相對較大的正或負值之經表面改質之研磨粒，在酸性條件下亦可彼此強力相斥而良好地分散，其結果可提昇研磨用組成物的保存穩定性。此般經表面改質之研磨粒，例如可將鋁、鈦或鋯等之金屬或此等的氧化物與研磨粒混合，使摻雜於研磨粒的表面而得。 The abrasive particles can be surface modified. In general colloidal vermiculite, since the value of the zeta potential is close to zero under acidic conditions, the vermiculite particles do not mutually repel each other under acidic conditions and are easily aggregated. On the other hand, the surface-modified abrasive grains having a relatively large positive or negative value even under acidic conditions can be strongly dispersed and well dispersed under acidic conditions, and the result can be improved by grinding. The storage stability of the composition was used. The surface-modified abrasive grains can be obtained by, for example, mixing a metal such as aluminum, titanium or zirconium or the like with abrasive grains to be doped on the surface of the abrasive grains.
或是，研磨用組成物中之經表面改質之研磨粒，亦可為將有機酸固定化之矽石。當中較佳可使用將有機酸固定化之膠體矽石。有機酸對膠體矽石之固定化，是藉由將有機酸的官能基化學鍵結於膠體矽石的表面來進行。僅使膠體矽石與有機酸共存者，乃無法達成有機酸對膠體矽石之固定化。將有機酸的一種之磺酸固定化於膠體矽石者，例如可藉由“Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”,Chem.Commun.246-247(2003)所記載之方法來進行。具體而言，可在將3-巰丙基三甲氧矽烷等之具有硫醇基之矽烷偶合劑偶合於膠體矽石後，以過氧化氫將硫醇基氧化而得到磺酸固定化於表面之膠體矽石。或是，將羧酸固定化於膠體矽石者，例如可藉由“Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel”,Chemistry Letters,3,228-229(2000)所記載之方法來進行。具體而言，可將含有光反應性的2-硝基苄酯之矽烷偶合劑偶合於膠體矽石後，進行光照射而得到羧酸固定化於表面之膠體矽石。 Alternatively, the surface-modified abrasive grains in the polishing composition may be a vermiculite in which an organic acid is immobilized. Among them, colloidal vermiculite which immobilizes an organic acid can be preferably used. The immobilization of the colloidal vermiculite by the organic acid is carried out by chemically bonding the functional group of the organic acid to the surface of the colloidal vermiculite. Only the colloidal vermiculite and the organic acid coexist, and the immobilization of the colloidal vermiculite by the organic acid cannot be achieved. The sulfonic acid of one type of organic acid is immobilized on a colloidal vermiculite, for example, by the method described in "Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups", Chem. Commun. 246-247 (2003). . Specifically, after coupling a thiol coupling agent having a thiol group such as 3-mercaptopropyltrimethoxydecane to a colloidal vermiculite, the thiol group is oxidized with hydrogen peroxide to obtain a sulfonic acid immobilized on the surface. Colloidal vermiculite. Alternatively, the carboxylic acid is immobilized on colloidal vermiculite, for example, by "Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel", Chemistry Letters, 3, 228-229 (2000) The method described is carried out. Specifically, a photocatalytic 2-nitrobenzyl ester-containing decane coupling agent may be coupled to colloidal vermiculite, followed by light irradiation to obtain a colloidal vermiculite in which a carboxylic acid is immobilized on the surface.
研磨用組成物中，研磨粒之含有量較佳為0.1質量%以上，又較佳為0.5質量%以上，更佳為1質量%以上。隨著研磨粒的含有量增多，具有可提昇藉由研磨用組成物之研磨對象物之除去速度之優點。 In the polishing composition, the content of the abrasive grains is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and still more preferably 1% by mass or more. As the content of the abrasive grains increases, there is an advantage that the removal rate of the object to be polished by the polishing composition can be improved.
研磨用組成物中，研磨粒之含有量較佳為20質量% 以下，又較佳為15質量%以下，更佳為10質量%以下。隨著研磨粒的含有量減少，可抑制研磨用組成物的材料成本，並且不易引起研磨粒的凝聚。此外，藉由使用研磨用組成物來研磨研磨對象物，可容易得到表面缺陷少之研磨面。 In the polishing composition, the content of the abrasive grains is preferably 20% by mass. Hereinafter, it is preferably 15% by mass or less, and more preferably 10% by mass or less. As the content of the abrasive grains is reduced, the material cost of the polishing composition can be suppressed, and aggregation of the abrasive grains is less likely to occur. Further, by polishing the object to be polished using the polishing composition, it is possible to easily obtain a polished surface having few surface defects.
研磨粒的平均一次粒徑，較佳為5nm以上，又較佳為7nm以上，更佳為10nm以上。隨著研磨粒的平均一次粒徑增大，有利於提昇藉由研磨用組成物之研磨對象物之除去速度。尚，研磨粒的平均一次粒徑之值，例如可根據由BET法所測定之研磨粒的比表面積來計算。 The average primary particle diameter of the abrasive grains is preferably 5 nm or more, more preferably 7 nm or more, and still more preferably 10 nm or more. As the average primary particle diameter of the abrasive grains increases, it is advantageous to increase the removal speed of the object to be polished by the polishing composition. Further, the value of the average primary particle diameter of the abrasive grains can be calculated, for example, from the specific surface area of the abrasive grains measured by the BET method.
研磨粒的平均一次粒徑，較佳為100nm以下，尤佳為90nm以下，更佳為80nm以下。隨著研磨粒的平均一次粒徑減少，藉由使用研磨用組成物來研磨研磨對象物，可容易得到表面缺陷少之研磨面。 The average primary particle diameter of the abrasive grains is preferably 100 nm or less, more preferably 90 nm or less, still more preferably 80 nm or less. As the average primary particle diameter of the abrasive grains is reduced, the polishing target is polished by using the polishing composition, whereby the polishing surface having few surface defects can be easily obtained.
研磨粒的平均二次粒徑，較佳為150nm以下，又較佳為120nm以下，更佳為100nm以下。研磨粒的平均二次粒徑之值，例如可藉由雷射光散射法來測定。 The average secondary particle diameter of the abrasive grains is preferably 150 nm or less, more preferably 120 nm or less, still more preferably 100 nm or less. The value of the average secondary particle diameter of the abrasive grains can be measured, for example, by a laser light scattering method.
研磨粒之以平均一次粒徑之值除上平均二次粒徑之值所得之研磨粒的平均結合度(degree of association)，較佳為1.2以上，又較佳為1.5以上。隨著研磨粒的平均結合度增大，具有可提昇藉由研磨用組成物之研磨對象物之除去速度之優點。 The average degree of association of the abrasive grains obtained by dividing the value of the average primary particle diameter by the value of the average secondary particle diameter of the abrasive grains is preferably 1.2 or more, and more preferably 1.5 or more. As the average degree of bonding of the abrasive grains is increased, there is an advantage that the removal speed of the object to be polished by the polishing composition can be improved.
研磨粒的平均結合度，較佳為4以下，又較佳為3以下，更佳為2以下。隨著研磨粒的平均結合度降低，藉由 使用研磨用組成物來研磨研磨對象物，可容易得到表面缺陷少之研磨面。 The average degree of binding of the abrasive grains is preferably 4 or less, more preferably 3 or less, still more preferably 2 or less. As the average degree of bonding of the abrasive particles decreases, By polishing the object to be polished using the polishing composition, it is possible to easily obtain a polished surface having few surface defects.
研磨用組成物之pH之上限未特別特限定，但較佳為12，又較佳為10。隨著pH變低，研磨用組成物之操作性會提昇。 The upper limit of the pH of the polishing composition is not particularly limited, but is preferably 12 or more preferably 10. As the pH becomes lower, the workability of the polishing composition increases.
研磨用組成物之pH之下限，亦未特別特限定，但較佳為1，又較佳為3。當pH越高時，越可提昇研磨用組成物中研磨粒之分散性。 The lower limit of the pH of the polishing composition is not particularly limited, but is preferably 1, and is preferably 3. When the pH is higher, the dispersibility of the abrasive grains in the polishing composition can be improved.
為了將研磨用組成物之pH調整成所希望之值，因應所需而使用的pH調整劑可任意為酸或鹼，又，亦可為任意的無機或有機之化合物。 In order to adjust the pH of the polishing composition to a desired value, the pH adjusting agent used as needed may be an acid or a base, or may be any inorganic or organic compound.
研磨用組成物中可進而含有氧化劑。氧化劑為具有將研磨對象物之表面氧化之作用，當研磨用組成物中添加有氧化劑時，藉由研磨用組成物之研磨速度具有提昇之效果。然而，當研磨對象物為具有相變合金，若使用用來研磨以往含有金屬之表面的典型研磨用組成物來進行研磨時，會引起過度研磨。此可考量為相變合金之特性與以往半導體中所使用的金屬(例如，Cu)之特性不同之故，當研磨對象物為具有相變合金時，氧化劑之含有量較佳為低者。 The polishing composition may further contain an oxidizing agent. The oxidizing agent has an effect of oxidizing the surface of the object to be polished, and when an oxidizing agent is added to the polishing composition, the polishing rate of the polishing composition has an effect of improving. However, when the object to be polished is a phase change alloy, excessive polishing is caused when polishing is performed using a typical polishing composition for polishing a surface containing a metal. This is considered to be because the characteristics of the phase change alloy are different from those of the metal (for example, Cu) used in the conventional semiconductor. When the object to be polished has a phase change alloy, the content of the oxidant is preferably low.
研磨用組成物中，氧化劑之含有量之上限，較佳為10質量%，又較佳為5質量%。隨著氧化劑之含有量減少，不易因氧化劑而產生相變合金之過剩氧化，可抑制過度研磨。 The upper limit of the content of the oxidizing agent in the polishing composition is preferably 10% by mass, and more preferably 5% by mass. As the content of the oxidizing agent is reduced, excessive oxidation of the phase change alloy due to the oxidizing agent is less likely to occur, and excessive polishing can be suppressed.
研磨用組成物中，氧化劑之含有量之下限，較佳為0.1質量%，又較佳為0.3質量%。隨著氧化劑之含有量增加，有助於研磨速度之提昇。 The lower limit of the content of the oxidizing agent in the polishing composition is preferably 0.1% by mass, and more preferably 0.3% by mass. As the content of the oxidant increases, it contributes to an increase in the grinding speed.
可使用的氧化劑，例如有過氧化物。作為過氧化物之具體例，列舉例如過氧化氫、過乙酸、過碳酸鹽、過氧化尿素及過氯酸，以及過硫酸鈉、過硫酸鉀及過硫酸銨等之過硫酸鹽。之中就研磨速度之觀點而言，較佳為過硫酸鹽及過氧化氫；就在水溶液中的穩定性及環境負荷之觀點而言，特佳為過氧化氫。 Oxidizing agents which can be used, for example, have peroxides. Specific examples of the peroxide include hydrogen peroxide, peracetic acid, percarbonate, urea peroxide, and perchloric acid, and persulfates such as sodium persulfate, potassium persulfate, and ammonium persulfate. Among them, persulfate and hydrogen peroxide are preferred from the viewpoint of polishing rate, and hydrogen peroxide is particularly preferable from the viewpoint of stability in an aqueous solution and environmental load.
研磨用組成物中可進而含有錯化劑。研磨用組成物中所包含的錯化劑，係具有將相變合金的表面化學性蝕刻之作用，而具有提昇藉由研磨用組成物之研磨速度之功用。然而，當研磨對象物為具有相變合金，若使用用來研磨以往含有金屬之表面的典型研磨用組成物來進行研磨時，會引起過剩蝕刻，該結果會引起過度研磨。此可考量為相變合金之特性與以往半導體中所使用的金屬(例如，Cu)之特性不同之故，當研磨對象物為具有相變合金時，錯化劑之含有量較佳為低者。 The polishing composition may further contain a distoring agent. The distorting agent contained in the polishing composition has a function of chemically etching the surface of the phase change alloy, and has a function of improving the polishing rate by the polishing composition. However, when the object to be polished is a phase change alloy, if a polishing composition for polishing a conventional metal-containing surface is used for polishing, excessive etching is caused, and as a result, excessive polishing is caused. This can be considered as the difference between the characteristics of the phase change alloy and the metal (for example, Cu) used in the conventional semiconductor. When the object to be polished has a phase change alloy, the content of the error correcting agent is preferably low. .
研磨用組成物中，錯化劑之含有量之上限，較佳為10質量%，又較佳為1質量%。隨著錯化劑之含有量減少，不易因錯化劑而產生對於相變合金之過剩蝕刻。該結果可抑制過剩研磨。 In the polishing composition, the upper limit of the content of the distoring agent is preferably 10% by mass, and more preferably 1% by mass. As the content of the correcting agent decreases, it is not easy to cause excessive etching of the phase change alloy due to the distorting agent. This result can suppress excessive grinding.
研磨用組成物中，錯化劑之含有量之下限，較佳為0.01質量%，又較佳為0.1質量%。隨著錯化劑之含有量增加，對於相變合金之蝕刻效果會增加。該結果，有助於藉由研磨用組成物之研磨速度之提昇。 The lower limit of the content of the distoring agent in the polishing composition is preferably 0.01% by mass, and more preferably 0.1% by mass. As the content of the correcting agent increases, the etching effect on the phase change alloy increases. This result contributes to an increase in the polishing rate by the polishing composition.
可使用的錯化劑，有例如無機酸、有機酸、及胺基酸。作為無機酸之具體例，列舉例如硫酸、硝酸、硼酸、碳酸、次磷酸、亞磷酸及磷酸。作為有機酸的具體例，例如可列舉出甲酸、乙酸、丙酸、丁酸、戊酸、2-甲基丁酸、n-己酸、3,3-二甲基丁酸、2-乙基丁酸、4-甲基戊酸、n-庚酸、2-甲基己酸、n-辛酸、2-乙基庚酸、苯甲酸、乙醇酸、柳酸、甘油酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、馬來酸、鄰苯二甲酸、蘋果酸、酒石酸、檸檬酸及乳酸。亦可使用甲烷磺酸、乙烷磺酸及2-羥乙磺酸(isethionic acid)等之有機硫酸。此外，亦可使用無機酸或有機酸的鹼金屬鹽等之鹽，來取代無機酸或有機酸、或是與無機酸或有機酸組合使用。作為胺基酸的具體例，例如可列舉出甘胺酸、α-丙胺酸、β-丙胺酸、N-甲基甘胺酸、N,N-二甲基甘胺酸、2-胺基丁酸、正纈胺酸、纈胺酸、白胺酸、正白胺酸、異白胺酸、苯基丙胺酸、脯胺酸、肌胺酸、鳥胺酸、離胺酸、牛磺酸、絲胺 酸、蘇胺酸、類絲胺酸、酪胺酸、蠶豆苷(vicine)、麥黃酮(tricine)、3,5-二碘-酪胺酸、β-(3,4-二羥苯基)-甘胺酸、甲狀腺素、4-羥基-脯胺酸、半胱胺酸、甲硫胺酸、乙硫胺酸、羊毛硫胺酸、胱硫醚、胱胺酸、氧化半胱胺酸(cysteic acid)、天門冬胺酸、麩胺酸、S-(羧甲基)-半胱胺酸、4-胺基丁酸、天門冬胺、麩胺、偶氮絲胺酸、精胺酸、刀豆氨酸、瓜氨酸、δ-羥基-離胺酸、肌酸、組胺酸、1-甲基-組胺酸、3-甲基-組胺酸、及色胺酸。之中作為錯化劑，就提昇研磨之觀點而言較佳為甘胺酸、丙胺酸、蘋果酸、酒石酸、檸檬酸、乙醇酸、2-羥乙磺酸或是此等之鹽。 Missolving agents which can be used are, for example, inorganic acids, organic acids, and amino acids. Specific examples of the inorganic acid include sulfuric acid, nitric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid. Specific examples of the organic acid include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, and 2-ethyl. Butyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylheptanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid , succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, citric acid and lactic acid. Organic sulfuric acid such as methanesulfonic acid, ethanesulfonic acid, and isethionic acid can also be used. Further, a salt of an inorganic acid or an alkali metal salt of an organic acid or the like may be used instead of the inorganic acid or the organic acid or in combination with an inorganic acid or an organic acid. Specific examples of the amino acid include glycine, α-alanine, β-alanine, N-methylglycine, N,N-dimethylglycine, and 2-aminobutyl. Acid, n-proline, valine, leucine, orthraenic acid, isoleucine, phenylalanine, valine, creatinine, ornithine, lysine, taurine, Serine Acid, sulphate, serine, tyrosine, vicine, tricine, 3,5-diiodo-tyrosine, β-(3,4-dihydroxyphenyl) -glycine, thyroxine, 4-hydroxy-proline, cysteine, methionine, ethionine, lanthionine, cystathionine, cystine, oxidized cysteine ( Cysteic acid), aspartic acid, glutamic acid, S-(carboxymethyl)-cysteine, 4-aminobutyric acid, asparagine, glutamine, azosergic acid, arginine, Concanavalin, citrulline, δ-hydroxy-amino acid, creatine, histidine, 1-methyl-histidine, 3-methyl-histidine, and tryptophan. Among them, as the stabilizing agent, glycine acid, alanine, malic acid, tartaric acid, citric acid, glycolic acid, 2-hydroxyethanesulfonic acid or the like is preferred from the viewpoint of enhancing polishing.
研磨用組成物中可進而含有金屬防蝕劑。當將金屬防蝕劑添加於研磨用組成物時，使用研磨用組成物進行研磨後之相變合金，具有不易產生碟狀凹陷(dishing)等表面缺陷之效果。此外，該金屬防蝕劑，當研磨用組成物中為包含氧化劑及/或錯化劑時，可緩和因氧化劑所造成的相變合金表面之氧化，且與金屬離子(其係因氧化劑所造成的相變合金表面之金屬之氧化所產生者)反應，而發揮生成不溶性的錯合物之功用。其結果可抑制因錯化劑所造成的對相變合金之蝕刻，並可抑制過度研磨。 The polishing composition may further contain a metal corrosion inhibitor. When a metal corrosion inhibitor is added to the polishing composition, the phase change alloy after polishing using the polishing composition has an effect of not easily causing surface defects such as dishing. Further, the metal corrosion inhibitor, when the polishing composition contains an oxidizing agent and/or a distoring agent, can alleviate the oxidation of the surface of the phase change alloy caused by the oxidizing agent, and is caused by the metal ion (which is caused by the oxidizing agent) The oxidation of the metal on the surface of the phase change alloy reacts to exert the function of forming an insoluble complex. As a result, etching of the phase change alloy by the error correcting agent can be suppressed, and excessive polishing can be suppressed.
可使用的金屬防蝕劑之種類未特別特限定，但較佳為雜環化合物。雜環化合物中的雜環之節數未特別特限定。 又，雜環化合物可為單環化合物，亦可為具有縮合環之多環化合物。 The kind of the metal corrosion inhibitor which can be used is not particularly limited, but is preferably a heterocyclic compound. The number of the heterocyclic rings in the heterocyclic compound is not particularly limited. Further, the heterocyclic compound may be a monocyclic compound or a polycyclic compound having a condensed ring.
作為金屬防蝕劑之雜環化合物之具體例，列舉例如吡咯化合物、吡唑化合物、咪唑化合物、三唑化合物、四唑化合物、吡啶化合物、吡嗪化合物、噠嗪化合物、4-氮茚化合物、吲哚嗪化合物、吲哚化合物、異吲哚化合物、吲唑化合物、嘌呤化合物、喹嗪化合物、喹啉化合物、異喹啉化合物、萘啶化合物、酞嗪化合物、喹喔啉化合物、喹唑啉化合物、噌啉化合物、蝶啶化合物、噻唑化合物、異噻唑化合物、噁唑化合物、異噁唑化合物及呋呫化合物等之含氮雜環化合物。作為吡唑化合物的具體例，例如可列舉出1H-吡唑、4-硝基-3-吡唑羧酸及3,5-吡唑羧酸。作為咪唑化合物的具體例，例如可列舉出咪唑、1-甲基咪唑、2-甲基咪唑、4-甲基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-異丙基咪唑、苯並咪唑、5,6-二甲基苯並咪唑、2-胺基苯並咪唑、2-氯苯並咪唑及2-甲基苯並咪唑。作為三唑的具體例，例如可列舉出1,2,3-三唑、1,2,4-三唑、1-甲基-1,2,4-三唑、甲基-1H-1,2,4-三唑-3-羧酸酯、1,2,4-三唑-3-羧酸、1,2,4-三唑-3-羧酸甲酯、3-胺基-1H-1,2,4-三唑、3-胺基-5-苄基-4H-1,2,4-三唑、3-胺基-5-甲基-4H-1,2,4-三唑、3-硝基-1,2,4-三唑、3-溴-5-硝基-1,2,4-三唑、4-(1,2,4-三唑-1-基)酚、4-胺基-1,2,4-三唑、4-胺基-3,5-二丙基-4H-1,2,4-三唑、4-胺基-3,5-二甲基-4H-1,2,4-三唑、4-胺基-3,5-二庚基-4H-1,2,4-三唑、5-甲基-1,2,4-三唑-3,4-二 胺、1-羥基苯並三唑、1-胺基苯並三唑、1-羧基苯並三唑、5-氯-1H-苯並三唑、5-硝基-1H-苯並三唑、5-羧基-1H-苯並三唑、5,6-二甲基-1H-苯並三唑、1-(1",2'-二羧乙基)苯並三唑。作為四唑化合物的具體例，例如可列舉出1H-四唑、5-甲基四唑、5-胺基四唑、及5-苯基四唑。作為吲哚化合物的具體例，例如可列舉出1H-吲哚、1-甲基-1H-吲哚、2-甲基-1H-吲哚、3-甲基-1H-吲哚、4-甲基-1H-吲哚、5-甲基-1H-吲哚、6-甲基-1H-吲哚、及7-甲基-1H-吲哚。作為吲唑化合物的具體例，例如可列舉出1H-吲唑及5-胺基-1H-吲唑。此等雜環化合物，由於對相變合金之化學或物理吸附力高，所以可將更堅固的保護膜形成於相變合金表面。因此，可抑制在使用研磨用組成物進行研磨後之相變合金的過剩蝕刻。其結果可抑制過剩研磨。 Specific examples of the heterocyclic compound as the metal corrosion inhibitor include, for example, a pyrrole compound, a pyrazole compound, an imidazole compound, a triazole compound, a tetrazole compound, a pyridine compound, a pyrazine compound, a pyridazine compound, a 4-azaindene compound, and an anthracene. Pyridazine compound, hydrazine compound, isoindole compound, carbazole compound, hydrazine compound, quinazine compound, quinoline compound, isoquinoline compound, naphthyridine compound, pyridazine compound, quinoxaline compound, quinazoline compound A nitrogen-containing heterocyclic compound such as a porphyrin compound, a pteridine compound, a thiazole compound, an isothiazole compound, an oxazole compound, an isoxazole compound, and a furazan compound. Specific examples of the pyrazole compound include 1H-pyrazole, 4-nitro-3-pyrazolecarboxylic acid, and 3,5-pyrazolecarboxylic acid. Specific examples of the imidazole compound include imidazole, 1-methylimidazole, 2-methylimidazole, 4-methylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole. 2-isopropylimidazole, benzimidazole, 5,6-dimethylbenzimidazole, 2-aminobenzimidazole, 2-chlorobenzimidazole and 2-methylbenzimidazole. Specific examples of the triazole include 1,2,3-triazole, 1,2,4-triazole, 1-methyl-1,2,4-triazole, and methyl-1H-1. 2,4-triazole-3-carboxylate, 1,2,4-triazole-3-carboxylic acid, methyl 1,2,4-triazole-3-carboxylate, 3-amino-1H- 1,2,4-triazole, 3-amino-5-benzyl-4H-1,2,4-triazole, 3-amino-5-methyl-4H-1,2,4-triazole , 3-nitro-1,2,4-triazole, 3-bromo-5-nitro-1,2,4-triazole, 4-(1,2,4-triazol-1-yl)phenol , 4-amino-1,2,4-triazole, 4-amino-3,5-dipropyl-4H-1,2,4-triazole, 4-amino-3,5-dimethyl 4-H-1,2,4-triazole, 4-amino-3,5-diheptyl-4H-1,2,4-triazole, 5-methyl-1,2,4-triazole -3,4-two Amine, 1-hydroxybenzotriazole, 1-aminobenzotriazole, 1-carboxybenzotriazole, 5-chloro-1H-benzotriazole, 5-nitro-1H-benzotriazole, 5-carboxy-1H-benzotriazole, 5,6-dimethyl-1H-benzotriazole, 1-(1",2'-dicarboxyethyl)benzotriazole. As a tetrazole compound Specific examples include, for example, 1H-tetrazole, 5-methyltetrazole, 5-aminotetrazole, and 5-phenyltetrazole. Specific examples of the ruthenium compound include, for example, 1H-oxime. , 1-methyl-1H-indole, 2-methyl-1H-indole, 3-methyl-1H-indole, 4-methyl-1H-indole, 5-methyl-1H-indole 6-Methyl-1H-indole and 7-methyl-1H-indole. Specific examples of the carbazole compound include 1H-carbazole and 5-amino-1H-carbazole. Since the heterocyclic compound has a high chemical or physical adsorption force to the phase change alloy, a stronger protective film can be formed on the surface of the phase change alloy. Therefore, the phase change alloy after polishing using the polishing composition can be suppressed. Excessive etching, as a result, can suppress excessive grinding.
研磨用組成物中，金屬防蝕劑之含有量之上限，較佳為10質量%，又較佳為5質量%，更佳為1質量%。隨著金屬防蝕劑之含有量減少，藉由研磨用組成物之研磨速度具有提昇之效果。 The upper limit of the content of the metal corrosion inhibitor in the polishing composition is preferably 10% by mass, more preferably 5% by mass, still more preferably 1% by mass. As the content of the metal corrosion inhibitor is reduced, the polishing rate by the polishing composition has an effect of improving.
研磨用組成物中，金屬防蝕劑之含有量之下限，較佳為0.001質量%，又較佳為0.01質量%，更佳為0.1質量%。隨著金屬防蝕劑之含有量增加，可抑制在使用研磨用組成物進行研磨後之相變合金的過剩蝕刻。其結果可抑制過剩研磨。 The lower limit of the content of the metal corrosion inhibitor in the polishing composition is preferably 0.001% by mass, more preferably 0.01% by mass, still more preferably 0.1% by mass. As the content of the metal corrosion inhibitor increases, excessive etching of the phase change alloy after polishing using the polishing composition can be suppressed. As a result, excessive polishing can be suppressed.
本發明之其他實施形態為提供一種研磨方法，其係使用本發明之研磨用組成物用來研磨具有相變合金之研磨對 象物之表面。作為可在本研磨方法中使用之墊片(pads)，可使用不織布、發泡聚胺基甲酸酯(PU)、多孔質氟樹脂等，並無特別限制。此外，可在研磨墊片上施以溝槽加工以使研磨用組成物容易停留在研磨墊片上。 Another embodiment of the present invention provides a polishing method for polishing a polishing pair having a phase change alloy using the polishing composition of the present invention. The surface of the elephant. As the spacer which can be used in the present polishing method, a nonwoven fabric, a foamed polyurethane (PU), a porous fluororesin or the like can be used, and it is not particularly limited. Further, a groove process can be applied to the polishing pad to make the polishing composition easily stay on the polishing pad.
研磨具有相變合金之研磨對象物的研磨墊片，該研磨墊片之硬度之下限，以蕭氏硬度D計較佳為50。當墊片的蕭氏硬度D愈高時，墊片的機械性作用愈大，可提升研磨速度。此外，本發明實施形態之研磨用組成物係具有，即使為未含有研磨粒，亦可得到所謂的高研磨速度之優點。由如此般之觀點而言，蕭氏硬度D之又較佳的下限為60。 The polishing pad having the object to be polished of the phase change alloy is polished, and the lower limit of the hardness of the polishing pad is preferably 50 in terms of Shore D. When the lower hardness D of the gasket is higher, the mechanical effect of the gasket is larger, and the polishing speed can be increased. Further, the polishing composition according to the embodiment of the present invention has an advantage that a so-called high polishing rate can be obtained even if the abrasive grains are not contained. From such a point of view, a preferred lower limit of the Shore D hardness is 60.
研磨具有相變合金之研磨對象物的研磨墊片，該研磨墊片之硬度之上限，以蕭氏硬度D計較佳為99。當墊片的蕭氏硬度D愈低時，愈不易使研磨對象物形成損傷。由如此般之觀點而言，蕭氏硬度D之更佳的上限為95。當墊片硬度未滿50時，墊片之機械性作用會變小，研磨速度會降低。尚，蕭氏硬度D，就定義上不會有100以上之值。墊片的蕭氏硬度D，可藉由蕭氏硬度D測定儀來測定。 The polishing pad having the object to be polished of the phase change alloy is polished, and the upper limit of the hardness of the polishing pad is preferably 99 in terms of Shore D. When the lower hardness D of the gasket is lower, the object is less likely to cause damage to the object to be polished. From such a viewpoint, the upper limit of the better hardness of the Shore D is 95. When the hardness of the gasket is less than 50, the mechanical action of the gasket becomes smaller and the polishing speed is lowered. Still, Xiao's hardness D, there will be no value of more than 100 in the definition. The Shore hardness D of the gasket can be measured by a Shore D tester.
蕭氏硬度D為50以上之研磨墊片，可由發泡體所形成，或是由布、不織布等之非發泡體所形成；作為研磨墊片之材質，可使用聚胺基甲酸酯、丙烯酸、聚酯、丙烯酸-酯共聚物、聚四氟乙烯、聚丙烯、聚乙烯、聚4-甲基戊烯、纖維素、纖維素酯、尼龍及醯胺等之聚醯胺、聚醯亞胺、聚醯亞胺醯胺、聚矽氧烷共聚物、環氧乙烷化合物、酚樹脂、聚苯乙烯、聚碳酸酯、環氧樹脂等之樹脂。 A polishing pad having a hardness D of 50 or more may be formed of a foam or a non-foamed body such as a cloth or a non-woven fabric; as a material of the polishing pad, a polyurethane, acrylic may be used. Polyester, polyimine, polyester, acrylate-ester copolymer, polytetrafluoroethylene, polypropylene, polyethylene, poly-4-methylpentene, cellulose, cellulose ester, nylon and guanamine A resin such as a polyamidamine, a polyoxyalkylene copolymer, an oxirane compound, a phenol resin, a polystyrene, a polycarbonate, or an epoxy resin.
藉由本實施形態，可得到下列作用及效果。 According to this embodiment, the following actions and effects can be obtained.
係認為因以往的研磨用組成物中的添加劑(特別是錯化劑)等，使對於相變合金引起過度的蝕刻，其結果方面由於相變合金之氧化物會溶出，因而產生了凹坑。相較於此，分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物，係相變合金與化合物(其係分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物)之分子內的2個羰基會鍵結而形成不溶性的錯合物，因而於相變合金表面形成不溶性的脆性膜。其結果認為，抑制了因以往的研磨用組成物中的添加劑(特別是錯化劑)等之對於相變合金之過度蝕刻，而可抑制凹坑。 It is considered that an excessive amount of etching is caused to the phase change alloy by an additive (particularly a distorting agent) in the conventional polishing composition, and as a result, the oxide of the phase change alloy is eluted, and pits are generated. In contrast, a compound in which two carbonyl groups contained in a molecule are carbon atoms bonded to the first and third positions in the molecule is a phase change alloy and a compound (the two carbonyl groups contained in the molecule) The two carbonyl groups in the molecule of the compound which is bonded to the carbon atoms at the first and third positions in the molecule are bonded to each other to form an insoluble complex, and an insoluble brittle film is formed on the surface of the phase change alloy. As a result, it is considered that excessive etching of the phase change alloy such as an additive (particularly, a distorting agent) in the conventional polishing composition can be suppressed, and pits can be suppressed.
前述實施形態亦可變更如下。 The above embodiment can also be modified as follows.
‧前述實施形態之研磨用組成物，因應所需可進而含有界面活性劑或水溶性高分子、防腐劑般之一般所公知的添加劑。 ‧ The polishing composition of the above embodiment may further contain a generally known additive such as a surfactant, a water-soluble polymer, or a preservative, as needed.
‧前述實施形態之研磨用組成物，可為單液型或是以雙液型為首之多液型。 ‧ The polishing composition of the above embodiment may be a single liquid type or a multi-liquid type including a two-liquid type.
‧前述實施形態之研磨用組成物，可藉由以水來稀釋研磨用組成物之原液而調製出。 The polishing composition of the above embodiment can be prepared by diluting a stock solution of the polishing composition with water.
接著說明本發明之實施例及比較例。 Next, examples and comparative examples of the present invention will be described.
藉由將表1中所記載的各成分進行混合，而調整出實施例1~24及比較例1~23之各組成物。表1中的“添加劑”欄之“種類”欄中，實施例時為表示各組成物中所包含的分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物之種類；比較例時為表示該分子內所含有的2個羰基為鍵結於分子內的第1位及第3位之碳原子的化合物以外的添加劑之種類，或是表示由錯化劑(其係用來研磨以往含有金屬之表面的典型研磨用組成物中所含有者)等所選定的添加劑之種類。又，“含有量(質量%)”欄中為表示各組成物中該添加劑之含有量。同欄當中以“-”表示者，為未含有該添加劑之意。表1的“pH”欄中為表示各組成物中的pH。pH為添加無機酸或無機鹼，以調整成指定之值。 Each of the components of Examples 1 to 24 and Comparative Examples 1 to 23 was adjusted by mixing the components described in Table 1. In the "type" column of the "additive" column in Table 1, the examples show that the two carbonyl groups contained in the molecules contained in the respective compositions are the first and third positions bonded in the molecule. The type of the compound having a carbon atom; the comparative example is a type of an additive other than a compound in which two carbonyl groups contained in the molecule are carbon atoms bonded to the first and third positions in the molecule, or The type of additive selected, such as a distorting agent (which is used to polish a typical polishing composition on a surface containing a metal). In addition, the "content (% by mass)" column indicates the content of the additive in each composition. The "-" in the same column indicates that the additive is not included. The "pH" column of Table 1 indicates the pH in each composition. The pH is the addition of a mineral acid or an inorganic base to adjust to a specified value.
使用實施例1~24及比較例1~23之各組成物，並以表2所示之條件，來確認對於含有GST合金(Ge、Sb及Te的質量%比為2：2：5)之無圖型晶圓(blanket wafer)切片之蝕刻速度。關於以表2所示條件進行一定時間研磨時之研磨速度，係使用螢光X線分析法(XRF)，藉由測定蝕刻試驗前後之膜厚差而算出。該結果為表示於表1中“評估”欄之“蝕刻速度”欄。尚，評估基準為對各組成物，與pH為相同的比較例1~3中任一項之組成物之蝕刻速度做比較，並將蝕刻速度為低之情形設為良好。 Using the compositions of Examples 1 to 24 and Comparative Examples 1 to 23, the conditions shown in Table 2 were used to confirm that the mass ratio of the GST-containing alloy (Ge, Sb, and Te was 2:2:5). The etching speed of a blanket wafer slice. The polishing rate at the time of polishing for a certain period of time under the conditions shown in Table 2 was calculated by measuring the film thickness difference before and after the etching test using a fluorescent X-ray analysis method (XRF). The results are shown in the "etching speed" column of the "Evaluation" column in Table 1. In addition, the evaluation criteria were to compare the etching rates of the compositions of any of Comparative Examples 1 to 3 having the same pH as the respective compositions, and to set the etching rate to be low.
如表1中所示般，相較於使用未符合本發明條件之比較例1~23之組成物，使用實施例1~24之組成物時，在抑制蝕刻確認得到顯著優異之功效。 As shown in Table 1, when the compositions of Examples 1 to 24 were used as compared with the compositions of Comparative Examples 1 to 23 which did not satisfy the conditions of the present invention, the effect of suppressing etching was remarkably excellent.
Claims (9)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012122194A JP2013247341A (en) | 2012-05-29 | 2012-05-29 | Polishing composition, and polishing method and device manufacturing method using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201402732A true TW201402732A (en) | 2014-01-16 |
Family
ID=49672929
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102108835A TW201404873A (en) | 2012-05-29 | 2013-03-13 | Polishing composition |
| TW102108841A TW201350565A (en) | 2012-05-29 | 2013-03-13 | Polishing composition |
| TW102108840A TW201402732A (en) | 2012-05-29 | 2013-03-13 | Polishing composition |
| TW102108837A TW201404874A (en) | 2012-05-29 | 2013-03-13 | Polishing composition |
| TW102108834A TWI557218B (en) | 2012-05-29 | 2013-03-13 | Polishing composition |
| TW102108836A TW201402798A (en) | 2012-05-29 | 2013-03-13 | Polishing composition, and polishing method and device manufacturing method using the same |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102108835A TW201404873A (en) | 2012-05-29 | 2013-03-13 | Polishing composition |
| TW102108841A TW201350565A (en) | 2012-05-29 | 2013-03-13 | Polishing composition |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102108837A TW201404874A (en) | 2012-05-29 | 2013-03-13 | Polishing composition |
| TW102108834A TWI557218B (en) | 2012-05-29 | 2013-03-13 | Polishing composition |
| TW102108836A TW201402798A (en) | 2012-05-29 | 2013-03-13 | Polishing composition, and polishing method and device manufacturing method using the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9631121B2 (en) |
| JP (1) | JP2013247341A (en) |
| KR (1) | KR102052015B1 (en) |
| TW (6) | TW201404873A (en) |
| WO (6) | WO2013179717A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015140850A1 (en) * | 2014-03-20 | 2015-09-24 | 株式会社フジミインコーポレーテッド | Polishing composition, and polishing method |
| KR20170066343A (en) * | 2014-09-30 | 2017-06-14 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition |
| JP6100231B2 (en) * | 2014-12-15 | 2017-03-22 | 株式会社藤商事 | Bullet ball machine |
| JP7133401B2 (en) * | 2017-09-26 | 2022-09-08 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate |
| CN110656334B (en) * | 2019-11-06 | 2021-12-07 | 深圳市鑫鸿达清洗技术有限公司 | Environment-friendly aluminum material chemical polishing solution free of phosphorus element and nitrogen element |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000349052A (en) * | 1999-06-04 | 2000-12-15 | Seimi Chem Co Ltd | ABRASIVE, FOR SEMICONDUCTOR CONTAINING Mn2O3 PARTICLE |
| US6293848B1 (en) | 1999-11-15 | 2001-09-25 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| US6527817B1 (en) | 1999-11-15 | 2003-03-04 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| JP2002198331A (en) * | 2000-12-26 | 2002-07-12 | Jsr Corp | Polishing method |
| JP4231632B2 (en) | 2001-04-27 | 2009-03-04 | 花王株式会社 | Polishing liquid composition |
| JP2003303792A (en) * | 2002-04-10 | 2003-10-24 | Nippon Shokubai Co Ltd | Water-based dispersing element for chemical mechanical polishing and polishing method |
| KR101275964B1 (en) * | 2005-02-23 | 2013-06-14 | 제이에스알 가부시끼가이샤 | Chemical mechanical polishing method |
| CN101180379B (en) * | 2005-03-25 | 2013-07-24 | 气体产品与化学公司 | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers |
| JP4792802B2 (en) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Surface treatment method of group III nitride crystal |
| US7897061B2 (en) | 2006-02-01 | 2011-03-01 | Cabot Microelectronics Corporation | Compositions and methods for CMP of phase change alloys |
| JP2007299979A (en) * | 2006-05-01 | 2007-11-15 | Sumitomo Electric Ind Ltd | Surface treatment method of group iii nitride crystal and group iii nitride crystal substrate |
| JP2008109025A (en) * | 2006-10-27 | 2008-05-08 | Jsr Corp | Watery dispersing element for chemical/mechanical polishing and method for chemically and mechanically polishing semiconductor device |
| KR20090002506A (en) | 2007-06-29 | 2009-01-09 | 제일모직주식회사 | Cmp slurry composition for the phase change memory materials and polishing method using the same |
| US20090001339A1 (en) * | 2007-06-29 | 2009-01-01 | Tae Young Lee | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same |
| CN101765647B (en) | 2007-07-26 | 2016-05-04 | 卡伯特微电子公司 | Be used for composition and the method for the chemical-mechanical polishing of phase-change material |
| US7915071B2 (en) * | 2007-08-30 | 2011-03-29 | Dupont Air Products Nanomaterials, Llc | Method for chemical mechanical planarization of chalcogenide materials |
| KR101198100B1 (en) | 2007-12-11 | 2012-11-09 | 삼성전자주식회사 | Method of forming a phase-change material layer pattern, method of manufacturing a phase-change memory device and slurry composition used for the methods |
| KR101341875B1 (en) * | 2008-04-30 | 2013-12-16 | 한양대학교 산학협력단 | Slurry for polishing phase changeable meterial and method for patterning polishing phase changeable meterial using the same |
| US8735293B2 (en) | 2008-11-05 | 2014-05-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
| JP5499556B2 (en) * | 2008-11-11 | 2014-05-21 | 日立化成株式会社 | Slurry and polishing liquid set, and substrate polishing method and substrate using CMP polishing liquid obtained therefrom |
| US20100130013A1 (en) * | 2008-11-24 | 2010-05-27 | Applied Materials, Inc. | Slurry composition for gst phase change memory materials polishing |
| JP4389015B1 (en) * | 2009-02-17 | 2009-12-24 | 国立大学法人室蘭工業大学 | Manufacturing method of high purity Si |
| KR101172647B1 (en) * | 2009-10-22 | 2012-08-08 | 히다치 가세고교 가부시끼가이샤 | Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate |
| JP5760317B2 (en) | 2010-02-05 | 2015-08-05 | 日立化成株式会社 | CMP polishing liquid and polishing method using this CMP polishing liquid |
| US20120003834A1 (en) | 2010-07-01 | 2012-01-05 | Koo Ja-Ho | Method Of Polishing Chalcogenide Alloy |
| JP5695367B2 (en) * | 2010-08-23 | 2015-04-01 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method using the same |
-
2012
- 2012-05-29 JP JP2012122194A patent/JP2013247341A/en active Pending
-
2013
- 2013-03-12 WO PCT/JP2013/056743 patent/WO2013179717A1/en active Application Filing
- 2013-03-12 WO PCT/JP2013/056742 patent/WO2013179716A1/en active Application Filing
- 2013-03-12 WO PCT/JP2013/056746 patent/WO2013179720A1/en active Application Filing
- 2013-03-12 WO PCT/JP2013/056747 patent/WO2013179721A1/en active Application Filing
- 2013-03-12 US US14/403,497 patent/US9631121B2/en active Active
- 2013-03-12 WO PCT/JP2013/056744 patent/WO2013179718A1/en active Application Filing
- 2013-03-12 WO PCT/JP2013/056745 patent/WO2013179719A1/en active Application Filing
- 2013-03-12 KR KR1020147035239A patent/KR102052015B1/en active IP Right Grant
- 2013-03-13 TW TW102108835A patent/TW201404873A/en unknown
- 2013-03-13 TW TW102108841A patent/TW201350565A/en unknown
- 2013-03-13 TW TW102108840A patent/TW201402732A/en unknown
- 2013-03-13 TW TW102108837A patent/TW201404874A/en unknown
- 2013-03-13 TW TW102108834A patent/TWI557218B/en active
- 2013-03-13 TW TW102108836A patent/TW201402798A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TWI557218B (en) | 2016-11-11 |
| WO2013179718A1 (en) | 2013-12-05 |
| US9631121B2 (en) | 2017-04-25 |
| WO2013179720A1 (en) | 2013-12-05 |
| TW201402798A (en) | 2014-01-16 |
| WO2013179719A1 (en) | 2013-12-05 |
| US20150152290A1 (en) | 2015-06-04 |
| TW201350564A (en) | 2013-12-16 |
| WO2013179717A1 (en) | 2013-12-05 |
| KR102052015B1 (en) | 2019-12-04 |
| TW201404873A (en) | 2014-02-01 |
| WO2013179721A1 (en) | 2013-12-05 |
| KR20150020320A (en) | 2015-02-25 |
| JP2013247341A (en) | 2013-12-09 |
| TW201350565A (en) | 2013-12-16 |
| WO2013179716A1 (en) | 2013-12-05 |
| TW201404874A (en) | 2014-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI628248B (en) | Grinding composition | |
| WO2013047733A1 (en) | Polishing composition | |
| CN102318042A (en) | Polishing agent for copper polishing and polishing method using same | |
| KR20140108563A (en) | Polishing composition | |
| TWI586793B (en) | A polishing composition, a polishing method using the same, and a method for manufacturing the same | |
| WO2013047734A1 (en) | Polishing composition | |
| TW201402732A (en) | Polishing composition | |
| JP2013080752A (en) | Polishing composition | |
| JP2017163148A (en) | Scratch reducing agent and scratch reducing method | |
| JP5945123B2 (en) | Polishing composition | |
| JP2017038070A (en) | Method of manufacturing polishing composition | |
| JP2013157582A (en) | Polishing composition | |
| JP2013157579A (en) | Polishing composition | |
| JP2017114986A (en) | Polishing liquid and polishing method | |
| JP2013157583A (en) | Polishing composition |