TW201400977A - Photomask, photomask manufacturing method and pattern transfer method - Google Patents
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- 238000012546 transfer Methods 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000010363 phase shift Effects 0.000 claims abstract description 112
- 238000002834 transmittance Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000012788 optical film Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 160
- 230000005540 biological transmission Effects 0.000 claims description 52
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 51
- 238000009826 distribution Methods 0.000 description 29
- 230000000694 effects Effects 0.000 description 17
- 238000005530 etching Methods 0.000 description 14
- 238000000059 patterning Methods 0.000 description 10
- 230000006872 improvement Effects 0.000 description 9
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 238000013041 optical simulation Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- -1 telluride compound Chemical class 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910001093 Zr alloy Inorganic materials 0.000 description 2
- 229910006249 ZrSi Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000001235 sensitizing effect Effects 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Abstract
Description
本發明係關於一種可高精度地轉印微細之轉印用圖案之光罩、使用該光罩之圖案轉印方法、及平板顯示器之製造方法。又，本發明係關於一種用以成為用於平板顯示器之製造之光罩的空白光罩(photomask blank)。 The present invention relates to a photomask capable of transferring a fine transfer pattern with high precision, a pattern transfer method using the photomask, and a method of manufacturing a flat panel display. Further, the present invention relates to a photomask blank for use as a photomask for the manufacture of flat panel displays.
於以液晶顯示裝置為代表之平板顯示器之製造中，有藉由形成更微細之圖案而謀求畫質之提高之需要。 In the manufacture of flat panel displays typified by liquid crystal display devices, there is a need to improve the image quality by forming finer patterns.
專利文獻1中，記載有於用於液晶顯示裝置製造之曝光條件中，對先前無法解析之微細之圖案進行解析，用以獲得更精細之轉印圖像之光罩。 Patent Document 1 describes a reticle for analyzing a fine pattern that has not been previously analyzed in an exposure condition for manufacturing a liquid crystal display device to obtain a finer transferred image.
專利文獻2中，記載有將遮光膜圖案化，以覆蓋遮光膜之方式形成相對於i線具有180度之相位差之膜厚之相移層之相移光罩。專利文獻2中記載有藉由該相移光罩，可實現微細且高精度之圖案形成。 Patent Document 2 describes a phase shift mask in which a light-shielding film is patterned to form a phase shift layer having a film thickness of 180 degrees with respect to an i-line so as to cover the light-shielding film. Patent Document 2 describes that a fine and highly precise pattern can be formed by the phase shift mask.
[專利文獻1]日本專利特開2009-42753號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-42753
[專利文獻1]日本專利特開2011-13283號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2011-13283
近年來，期望平板顯示器之配置圖案之微細化。且，如此之微 細化不僅自平板顯示器之亮度之提高、反應速度之提高等圖像品質之高度化之觀點而言，自節能之觀點而言，亦關係到存在有利之方面。隨之，對於用於平板顯示器之製造之光罩，微細之線寬精度之要求亦提高。然而，難以藉由將光罩之轉印用圖案單純地微細化而欲將平板顯示器之配線圖案微細化。 In recent years, it has been desired to miniaturize the arrangement pattern of flat panel displays. And so little The refinement is not only from the viewpoint of the improvement of the brightness of the flat panel display, but also the improvement of the reaction speed, and it is also advantageous from the viewpoint of energy saving. Accordingly, for the photomask used for the manufacture of flat panel displays, the requirement for fine line width accuracy is also improved. However, it is difficult to refine the wiring pattern of the flat panel display by simply miniaturizing the pattern for transfer of the photomask.
本發明者等人發現若將形成於光罩之轉印用圖案微細化，則有以下之問題。例如，若將具備透光部與遮光部之所謂之二元遮罩之圖案細微化，且遮光部及透光部之尺寸(線寬)變小，則經由透光部照射至形成於被轉印體上之光阻膜之透射光之光量降低。將該狀態示於圖1中。 The inventors of the present invention have found that the following problems can be solved if the transfer pattern formed on the photomask is made fine. For example, when the pattern of the so-called binary mask including the light transmitting portion and the light blocking portion is made fine, and the size (line width) of the light shielding portion and the light transmitting portion is reduced, the light is transmitted through the light transmitting portion to be formed. The amount of light transmitted by the photoresist film on the print is reduced. This state is shown in Fig. 1.
此處以圖1(a)所示之利用遮光膜形成之線與間隙圖案為例進行說明。將圖1(a)所示之線與間隙圖案中，逐漸縮小間距寬度P(對應於此，線寬ML與間隙寬度MS逐漸減小)時，形成於被轉印體上之光阻膜上產生之透射光之光強度分佈示於圖1(b)中。如圖1(b)所示，可知將間距寬度P自8μm(線寬4.8μm、間隙寬度3.2μm)逐漸微細化至4μm(線寬2.8μm、間隙寬度1.2μm)時，光強度分佈之波型曲線之峰位置顯著降低。再者，此處，將寬度ML與間隙寬度MS分別相對於間距寬度P設定為P/2+0.8μm、P/2-0.8μm。 Here, the line and gap pattern formed by the light shielding film shown in FIG. 1(a) will be described as an example. In the line and gap pattern shown in FIG. 1(a), when the pitch width P is gradually reduced (corresponding to this, the line width ML and the gap width MS are gradually decreased), it is formed on the photoresist film on the transfer target. The light intensity distribution of the transmitted light produced is shown in Figure 1 (b). As shown in Fig. 1 (b), it is understood that the light intensity distribution wave is obtained when the pitch width P is gradually reduced from 8 μm (line width 4.8 μm, gap width 3.2 μm) to 4 μm (line width 2.8 μm, gap width 1.2 μm). The peak position of the profile curve is significantly reduced. Here, the width ML and the gap width MS are set to P/2+0.8 μm and P/2-0.8 μm, respectively, with respect to the pitch width P.
於圖2中顯示使間距P微細時之被轉印體上之光阻膜形成之光阻圖案之剖面形狀。於該情形時，可以理解在間距P達到5μm(線寬3.3μm、間隙寬度1.7μm)之時點，用以在光阻圖案上形成線與間隙圖案形狀之光量不足，無法形成用以作為後續步驟中之蝕刻遮罩之光阻圖案(參照圖2(d))。 Fig. 2 shows a cross-sectional shape of a photoresist pattern formed by a photoresist film on a transfer target when the pitch P is fine. In this case, it can be understood that when the pitch P reaches 5 μm (line width 3.3 μm, gap width 1.7 μm), the amount of light for forming the shape of the line and gap pattern on the photoresist pattern is insufficient to be formed as a subsequent step. The photoresist pattern of the etching mask (refer to FIG. 2(d)).
因此，作為提高轉印時之解析度，進行更微細之圖案化之方法，考慮作為先前LSI(Large Scale Integration，大規模積體電路)製造用之技術開發之曝光裝置之數值孔徑擴大、單一波長、且使用短波長 之曝光。然而，於應用該等技術之情形時，需要莫大之投資與技術開發，從而無法獲得與提供至市場之液晶顯示裝置之價格之整合性。 Therefore, as a method of improving the resolution at the time of transfer and performing finer patterning, it is considered that the numerical aperture of the exposure apparatus developed by the prior art of LSI (Large Scale Integration) is expanded by a single wavelength. And use short wavelengths Exposure. However, in the case of applying such technologies, great investment and technology development are required, so that integration with the price of liquid crystal display devices provided to the market cannot be obtained.
此外，如圖1(b)所示，作為對於光強度分佈之波型曲線之峰位置顯著降低之現象，用以彌補該光量不足之方法，考慮使曝光裝置之照射光量增加。認為若照射光量增加，則透射間隙部之光量增大，故可優化光阻圖案之形狀，即可使其分離為線與間隙圖案之形狀(參照圖2(e))。然而，因此，將曝光裝置之光源變更為大光量不現實，故必須使曝光時之掃描曝光時間大幅增加。實際上，可知為使如圖2(e)所示般使光阻圖案分離，與圖2(d)之情形相比較需要1.5倍之照射光量。 Further, as shown in Fig. 1(b), as a phenomenon in which the peak position of the mode curve of the light intensity distribution is remarkably lowered, in order to compensate for the shortage of the amount of light, it is considered to increase the amount of irradiation light of the exposure device. It is considered that when the amount of the irradiation light is increased, the amount of light in the transmission gap portion is increased, so that the shape of the photoresist pattern can be optimized, and the shape of the line and the gap pattern can be separated (see FIG. 2(e)). However, since it is unrealistic to change the light source of the exposure apparatus to a large amount of light, it is necessary to greatly increase the scanning exposure time at the time of exposure. Actually, it is understood that in order to separate the photoresist pattern as shown in Fig. 2(e), 1.5 times the amount of irradiation light is required as compared with the case of Fig. 2(d).
此外，上述專利文獻1中，記載有一種光罩，其係藉由將形成於透明基板上之半透光膜圖案化而形成特定圖案之具有透光部與半透光部之光罩，且於藉由透射該光罩之曝光之光而於被轉印體上形成線寬未達3μm之轉印圖案之光罩中，上述透光部或上述半透光部之至少一者具有未達3μm之線寬之部分，且該光罩具有包含上述透光部與上述半透光部之圖案。 Further, Patent Document 1 discloses a photomask which is formed by patterning a semi-transmissive film formed on a transparent substrate to form a mask having a light transmitting portion and a semi-light transmitting portion in a specific pattern, and In a reticle that forms a transfer pattern having a line width of less than 3 μm on the transfer target by transmitting the exposed light of the reticle, at least one of the light transmitting portion or the semi-transmissive portion has a defect a portion of a line width of 3 μm, and the photomask has a pattern including the light transmitting portion and the semi-light transmitting portion.
根據專利文獻1中記載之光罩，可抑制圖1(b)中顯著產生之透光部之峰位置之降低，從而可形成線與間隙形狀之光阻圖案。其意味形成於透明基板上之半透光膜之圖案藉由輔助包含透光部之轉印用圖案整體之透射光量，可達到光阻(此處為正型光阻P/R)能夠圖案化所需之光量。 According to the reticle described in Patent Document 1, it is possible to suppress the decrease in the peak position of the light-transmitting portion which is remarkably generated in FIG. 1(b), and to form a photoresist pattern having a line and a gap shape. It means that the pattern of the semi-transmissive film formed on the transparent substrate can be patterned by assisting the total amount of transmitted light of the transfer pattern including the light-transmitting portion, thereby achieving photoresist (here, positive-type photoresist P/R). The amount of light required.
如此，根據上述專利文獻1中記載之光罩，可形成在先前之LCD(Liquid Crystal Display，液晶顯示器)用曝光裝置中無法解析之未達3μm之圖案。然而，產生進一步提高該圖案化穩定性及精度之需求。 As described above, according to the photomask described in Patent Document 1, it is possible to form a pattern of less than 3 μm which cannot be analyzed in the exposure apparatus for a liquid crystal display (LCD). However, there is a need to further improve the stability and accuracy of the patterning.
專利文獻2中，記載有根據專利文獻2中記載之光罩，可形成藉由相位之反轉作用而光強度成為最小之區域，從而使曝光圖案更鮮 明。然而，根據本發明者等人之研究發現，根據利用LCD用曝光裝置於被轉印體上獲得之光強度分佈，於用於使光阻膜感光之充足之曝光光量之確保、及對比度之提高之方面有改善之餘地，該方面如圖案微細化般重要。 According to Patent Document 2, according to the photomask described in Patent Document 2, it is possible to form an area in which the light intensity is minimized by the reversal of the phase, thereby making the exposure pattern fresher. Bright. However, according to research by the inventors of the present invention, it has been found that the light intensity distribution obtained by the exposure device for LCD is sufficient for ensuring the amount of exposure light for sensitizing the photoresist film and the contrast. There is room for improvement in this respect, and this aspect is as important as the miniaturization of the pattern.
鑒於如上所述般之情況，本發明之目的在於提出一種可確實且精緻地轉印微細圖案之光罩、轉印方法、及平板顯示器之製造方法。 In view of the above circumstances, an object of the present invention is to provide a photomask capable of reliably and delicately transferring a fine pattern, a transfer method, and a method of manufacturing a flat panel display.
本發明係以下述構成1~8為特徵之光罩、以下述構成9為特徵之圖案轉印方法、以下述構成10為特徵之平板顯示器之製造方法、及以下述構成11為特徵之空白光罩。 The present invention is a photomask characterized by the following constitutions 1 to 8, a pattern transfer method characterized by the following configuration 9, a method of manufacturing a flat panel display characterized by the following configuration 10, and a blank light characterized by the following configuration 11 cover.
本發明係一種光罩，其特徵在於：其係於透明基板上形成有包含至少遮蔽曝光之光之一部分之遮光部與上述透明基板露出之透光部之轉印用圖案之光罩，且上述遮光部具有沿著上述遮光部之外周形成為特定寬度之邊緣區域與在上述遮光部形成於上述邊緣區域以外之部分之中央區域，上述中央區域係以相對於透射上述透光部之上述曝光之光中所含之代表波長之光具有大致180度之相移量之方式形成，上述邊緣區域係以相對於上述代表波長之光之相移量小於上述中央區域之方式形成，且於上述邊緣區域，形成有相對於上述代表波長之光具有50%以下之透射率之光學膜。 The present invention is characterized in that a photomask is formed on a transparent substrate, and a photomask including a light shielding portion for shielding at least one of the exposed light and a transfer pattern of the transparent portion exposed by the transparent substrate is formed on the transparent substrate, and The light shielding portion has an edge region formed along a circumference of the light shielding portion and having a specific width, and a central portion of the portion of the light shielding portion formed outside the edge region, wherein the central region is exposed to the light transmitting portion The light of the representative wavelength contained in the light is formed by a phase shift amount of substantially 180 degrees, and the edge region is formed such that a phase shift amount of light with respect to the representative wavelength is smaller than the central region, and the edge region is formed An optical film having a transmittance of 50% or less with respect to the light of the above representative wavelength is formed.
本發明之光罩可將下述之構成2~8適當地與上述構成1組合。 The photomask of the present invention can be combined with the above-described configuration 1 as appropriate in the following configurations 2 to 8.
本發明之光罩中，其特徵可為於上述中央區域亦形成有光學膜，上述中央區域之光學膜為相對於上述代表波長之光具有大致180度之相移量之相移膜。 In the photomask of the present invention, the optical film may be formed in the central region, and the optical film in the central region may be a phase shift film having a phase shift amount of substantially 180 degrees with respect to the light of the representative wavelength.
本發明之光罩中，其特徵可為上述邊緣區域之光學膜為由相對於上述代表波長之光具有大致180度之相移量之相移膜與相對於上述代表波長之光具有80%以下之透射率之透射調整膜積層而成之光學膜。 In the reticle of the present invention, the optical film of the edge region may be a phase shift film having a phase shift amount of substantially 180 degrees with respect to the light of the representative wavelength and 80% or less with respect to the light of the representative wavelength. An optical film in which a transmissive transmittance transmission film is laminated.
本發明之光罩中，上述透射調整膜之相對於上述代表波長之光之透射率為0.1%以上，且相對於上述代表波長之光可具有90~270度之相移量。 In the reticle of the present invention, the transmittance of the light transmission adjusting film with respect to the representative wavelength is 0.1% or more, and the phase shift amount of 90 to 270 degrees with respect to the light of the representative wavelength.
本發明之光罩中，上述透射調整膜之相對於上述代表波長之光之透射率可未達0.1%。 In the reticle of the present invention, the transmittance of the light transmission adjusting film with respect to the representative wavelength may be less than 0.1%.
本發明之光罩中，其特徵可為上述相移膜之相對於上述代表波長之光之透射率為20%以上。 In the photomask of the present invention, the phase shift film may have a transmittance of light of 20% or more with respect to the representative wavelength.
本發明之光罩中，其特徵可為上述遮光部或上述透光部之寬度為3μm以下。 In the reticle of the present invention, the light shielding portion or the light transmitting portion may have a width of 3 μm or less.
本發明之光罩中，其特徵可為上述轉印用圖案為線與間隙圖案。 In the photomask of the present invention, the transfer pattern may be a line and a gap pattern.
本發明係一種圖案轉印方法，其特徵在於使用如上述構成1至8中任一項記載之光罩，且使用曝光裝置將上述轉印用圖案轉印於被轉印體上。 The present invention is a pattern transfer method, characterized in that the photomask described in any one of the above-mentioned configurations 1 to 8 is used, and the transfer pattern is transferred onto a transfer target by an exposure device.
本發明係一種平板顯示器之製造方法，其特徵在於使用如構成9 記載之轉印方法。 The present invention is a method of manufacturing a flat panel display, characterized in that it is used as a composition 9 The transfer method described.
本發明係一種空白光罩，其特徵在於：其係用以成為用於製造平板顯示器之光罩者，且於透明基板上積層有相對於曝光上述光罩時之曝光之光中所含之代表波長之光具有20%以上之透射率及大致180度之相移量之相移膜、及相對於上述代表波長之光具有80%以下之透射率及90~270度之相移量之透射調整膜。 The present invention is a blank reticle, which is used for being used as a reticle for manufacturing a flat panel display, and is laminated on the transparent substrate with respect to the light contained in the exposure light when the reticle is exposed. The wavelength light has a transmittance of 20% or more and a phase shift film of a phase shift of approximately 180 degrees, and a transmittance of 80% or less and a phase shift of 90 to 270 degrees with respect to the light of the representative wavelength. membrane.
本發明係一種空白光罩，其特徵在於：其係用以成為用於製造平板顯示器之光罩者，且於透明基板上具有由相移膜與透射調整膜積層而成之積層膜，上述相移膜相對於曝光上述光罩時之曝光之光中所含之代表波長之光，具有20%以上之透射率及大致180度之相移量，上述積層膜相對於上述代表波長之光，具有50%以下之透射率及±90度以內之相移量。 The present invention relates to a blank mask, which is used for forming a photomask for a flat panel display, and has a laminated film formed by a phase shift film and a transmission adjusting film on a transparent substrate, the phase The transfer film has a transmittance of 20% or more and a phase shift amount of substantially 180 degrees with respect to light of a representative wavelength contained in the light exposed to the mask, and the laminated film has light with respect to the representative wavelength Transmittance below 50% and phase shift within ±90 degrees.
根據本發明，可獲得一種能夠確實且精緻地轉印微細圖案之光罩、轉印方法、及平板顯示器之製造方法。具體而言，消除因微細圖案化引起之透射光之光量不足，或進一步減少曝光所需之照射光量，且可形成優異形狀之光阻圖案作為蝕刻遮罩。 According to the present invention, a photomask capable of reliably and delicately transferring a fine pattern, a transfer method, and a method of manufacturing a flat panel display can be obtained. Specifically, the amount of light transmitted by the fine patterning is insufficient, or the amount of irradiation light required for exposure is further reduced, and a photoresist pattern having an excellent shape can be formed as an etching mask.
10‧‧‧透明基板 10‧‧‧Transparent substrate
11‧‧‧透光部 11‧‧‧Transmission Department
12‧‧‧遮光部 12‧‧‧Lighting Department
14‧‧‧邊緣區域 14‧‧‧Edge area
16‧‧‧中央區域 16‧‧‧Central area
20‧‧‧相移膜 20‧‧‧ phase shift film
21‧‧‧相移膜圖案 21‧‧‧ phase shift film pattern
30‧‧‧透射調整膜 30‧‧‧Transmission adjustment film
31‧‧‧透射調整膜圖案 31‧‧‧Transmission adjustment film pattern
40‧‧‧光阻膜 40‧‧‧Photoresist film
41‧‧‧光阻圖案 41‧‧‧resist pattern
50‧‧‧光阻膜 50‧‧‧Photoresist film
51‧‧‧光阻圖案 51‧‧‧resist pattern
圖1(a)係顯示二元遮罩之線與間隙圖案之模式圖，圖1(b)係顯示於將圖1(a)之間距P自8μm逐漸縮小至4μm之情形時，照射至形成於被轉印體上之光阻膜上之透射光之光強度分佈之圖表。 Fig. 1(a) is a schematic view showing a line and a gap pattern of a binary mask, and Fig. 1(b) is a view showing a case where the distance P between Fig. 1(a) is gradually reduced from 8 μm to 4 μm, and irradiation is performed. A graph of light intensity distribution of transmitted light on a photoresist film on a transfer target.
圖2(a)~(d)係顯示藉由圖1(b)之光強度分佈中之間距寬度P=8~5μm之線與間隙圖案之透射光而形成之光阻圖案之剖面形成者。圖2(e)係顯示以與圖2(d)相同之間距寬度P=5μm，使曝光裝置之照射光 量增加至1.5倍時之光阻圖案之剖面形狀者。 2(a) to 2(d) are diagrams showing the formation of a resist pattern formed by the line of the width width P=8 to 5 μm and the transmitted light of the gap pattern in the light intensity distribution of Fig. 1(b). Figure 2 (e) shows the same distance as the width of Figure 2 (d) P = 5 μm, so that the exposure light of the exposure device The amount of the cross-sectional shape of the photoresist pattern when the amount is increased to 1.5 times.
圖3(a)係顯示本發明之光罩之構成之一例之剖面模式圖。圖3(b)係透射<1>透光部、<2>邊緣區域及<3>中央區域之透射光之光強度分佈成分之說明圖。圖3(c)係顯示藉由本發明之光罩之光強度分佈調整，改善光強度分佈之說明圖。 Fig. 3 (a) is a schematic cross-sectional view showing an example of the configuration of a photomask of the present invention. Fig. 3(b) is an explanatory diagram of light intensity distribution components of transmitted light transmitted through the <1> light transmitting portion, the <2> edge region, and the <3> central region. Fig. 3(c) is an explanatory view showing the improvement of the light intensity distribution by the light intensity distribution adjustment of the photomask of the present invention.
圖4(A)~(D)係用於光學模擬之4種轉印用圖案之光罩之剖面模式圖。 4(A) to 4(D) are schematic cross-sectional views of a photomask for four types of transfer patterns for optical simulation.
圖5係顯示利用圖4所示之4種轉印用圖案之光罩之透射光之光強度分佈曲線之光學模擬之結果之圖。 Fig. 5 is a view showing the results of optical simulation of the light intensity distribution curve of the transmitted light by the reticle of the four transfer patterns shown in Fig. 4.
圖6係用以說明被轉印體上之光阻圖案之側面形狀之傾斜角之剖面模式圖。 Fig. 6 is a schematic cross-sectional view for explaining an inclination angle of a side shape of a photoresist pattern on a transfer target.
圖7(a)~(f)係顯示本發明之光罩之製造方法之一例之剖面模式圖及平面模式圖。 7(a) to 7(f) are a cross-sectional schematic view and a plan view showing an example of a method of manufacturing a photomask according to the present invention.
本發明之光罩具有以下之特徵。即，本發明係一種光罩，其特徵在於：其係於透明基板10上形成有包含至少遮蔽曝光之光之一部分之遮光部12與上述透明基板10露出之透光部11之轉印用圖案之光罩，且上述遮光部12具有沿著上述遮光部12之外周形成為特定寬度之邊緣區域14與在上述遮光部12中形成於上述邊緣區域14以外之部分之中央區域16，上述中央區域16係以相對於透射上述透光部11之上述曝光之光中所含之代表波長之光具有大致180度之相移量之方式形成，上述邊緣區域14係以相對於上述代表波長之光之相移量較上述中央區域16小之方式形成，且上述邊緣區域14中形成有相對於上述代表波長之光具有50%以下之透射率之光學膜。 The photomask of the present invention has the following features. That is, the present invention is a photomask characterized in that a transfer pattern including at least one portion of the light-shielding portion 12 that shields the exposed light and the light-transmitting portion 11 from which the transparent substrate 10 is exposed is formed on the transparent substrate 10. The light shielding portion 12 includes a peripheral region 14 formed to have a specific width along the outer periphery of the light shielding portion 12 and a central region 16 formed in a portion other than the edge region 14 in the light shielding portion 12, the central region The 16 series is formed to have a phase shift amount of substantially 180 degrees with respect to light of a representative wavelength included in the light that is transmitted through the light transmitting portion 11, and the edge region 14 is light with respect to the representative wavelength. The amount of phase shift is formed smaller than the central region 16 described above, and an optical film having a transmittance of 50% or less with respect to the light of the representative wavelength is formed in the edge region 14.
如上所述，本發明之光罩具有用以製造所期望之元件之轉印用圖案。該轉印用圖案具有遮光部12及透光部11。藉由該遮光部12及透 光部11具有之曝光之光透射率之不同，於被轉印體(液晶面板等)上之光阻膜上形成基於轉印用圖案之光強度分佈。且，藉由顯影對應於該光強度分佈而感光之光阻膜，獲得成為蝕刻加工被轉印體時之蝕刻遮罩之光阻圖案之立體形狀。 As described above, the photomask of the present invention has a transfer pattern for producing a desired element. This transfer pattern has a light shielding portion 12 and a light transmitting portion 11. By the shading portion 12 and through The light portion 11 has a difference in light transmittance of exposure, and a light intensity distribution based on the transfer pattern is formed on the resist film on the transfer target (liquid crystal panel or the like). Further, by developing a photoresist film which is photosensitive in accordance with the light intensity distribution, a three-dimensional shape of the photoresist pattern which is an etching mask when the transfer target is etched is obtained.
此處上述光阻圖案係藉由被轉印體上具有特定之光阻殘膜之部分與不具有光阻殘膜之部分(顯影後殘留之部分與溶出之部分)之譬如2階段之灰階而成為蝕刻遮罩者。換言之，本發明之光罩可謂至少於上述轉印用圖案部分中為2灰階(有光阻殘膜及無光阻殘膜)。再者，雖光阻膜無正型或負型之制約，但於本說明書中使用正型光阻進行說明。 Here, the photoresist pattern is a two-stage gray scale by a portion having a specific photoresist residue on the transferred body and a portion having no photoresist residual portion (a portion remaining after development and a portion to be eluted). And become the etch mask. In other words, the photomask of the present invention can be said to be at least 2 gray scales (having a photoresist residual film and a photoresist-free residual film) in at least the pattern portion for transfer. Further, although the photoresist film does not have a positive or negative type, it is described using a positive photoresist in this specification.
再者，本發明之透光部11與遮光部12係藉由透射兩者之曝光之光所形成之光強度之分佈而發揮2階段之灰階功能。因此，可如根據以下之說明而理解般，構成遮光部12之基板及光學膜並不限定於完全遮蔽曝光之光者。即，遮光部12係具有用以使曝光之光之強度降低之功能之部分，例如，可構成為藉由產生由特定相位之複數條光繞射所致之重疊而降低到達至光阻膜之曝光之光之強度。因此，於遮光部12當可配置特定之相移膜圖案21及特定之透射調整膜圖案31等光學膜之圖案，且亦可構成為於遮光部12配置基板之刻蝕等產生相移作用之構造，以使曝光之光之強度降低。 Furthermore, the light transmitting portion 11 and the light shielding portion 12 of the present invention exhibit a two-step gray scale function by transmitting the light intensity distribution formed by the exposure light of both. Therefore, as understood from the following description, the substrate and the optical film constituting the light shielding portion 12 are not limited to those that completely shield the exposed light. That is, the light shielding portion 12 has a function for lowering the intensity of the exposed light, and for example, it can be configured to reduce the arrival to the photoresist film by generating an overlap caused by a plurality of light diffractions of a specific phase. The intensity of the light of exposure. Therefore, in the light shielding portion 12, a pattern of an optical film such as a specific phase shift film pattern 21 and a specific transmission adjustment film pattern 31 may be disposed, or a phase shift effect may be formed in etching of the substrate disposed in the light shielding portion 12 or the like. Constructed to reduce the intensity of the exposed light.
於圖3(a)中例示本發明之光罩之構成。圖3(a)係用以於被轉印體上轉印線與間隙圖案之光罩所具有之轉印用圖案之剖面模式圖。 The configuration of the photomask of the present invention is illustrated in Fig. 3(a). Fig. 3 (a) is a schematic cross-sectional view showing a pattern for transfer which is used for a mask of a transfer line and a gap pattern on a transfer target.
此處，作為透明基板10，使用表面經研磨之石英玻璃基板等。大小無特別限制，根據使用該遮罩曝光之基板之種類(例如平板顯示器用基板等)、及每曝光1次之基板片數而適當選擇。例如作為透明基板10，使用一邊為300~1800mm左右之矩形基板。 Here, as the transparent substrate 10, a quartz glass substrate whose surface is polished is used. The size is not particularly limited, and is appropriately selected depending on the type of the substrate to be exposed by the mask (for example, a substrate for a flat panel display) and the number of substrates per exposure. For example, as the transparent substrate 10, a rectangular substrate having a side of about 300 to 1800 mm is used.
本發明之光罩係於透明基板10上具有包含至少遮蔽曝光之光之 一部分之遮光部12與上述透明基板10露出之透光部11之轉印用圖案者。於圖3(a)所示之形態中，作為光學膜，使用相對於曝光之光之代表波長具有大致180度之相移量之膜(以下記為相移膜20)與相對於上述代表波長透射率為80%以下之膜(以下記為透射調整膜30)，藉由對於該等分別進行適當之圖案化而形成相移膜圖案21及透射調整膜圖案31，由此形成透光部11與遮光部12。此處，遮光部12對應於線部，透光部11對應於間隙部。 The photomask of the present invention has a light on the transparent substrate 10 including at least shielding exposure light. A portion of the light shielding portion 12 and the transfer pattern of the light transmitting portion 11 exposed by the transparent substrate 10 are formed. In the embodiment shown in Fig. 3 (a), as the optical film, a film having a phase shift amount of substantially 180 degrees with respect to the representative wavelength of the exposed light (hereinafter referred to as phase shift film 20) and relative to the above representative wavelength are used. A film having a transmittance of 80% or less (hereinafter referred to as a transmission adjustment film 30) is formed by appropriately patterning the film, and the phase shift film pattern 21 and the transmission adjustment film pattern 31 are formed, thereby forming the light transmitting portion 11 And the light shielding portion 12. Here, the light shielding portion 12 corresponds to the line portion, and the light transmitting portion 11 corresponds to the gap portion.
本形態中，於透射曝光之光之透光部11，透明基板10露出。另一方面，於遮光部12，透明基板10上作為光學膜之一形成有相移膜20之相移膜圖案21。且，於該遮光部12內，沿著外周之特定寬度之邊緣區域14中，進而作為其他光學膜，形成有透射調整膜30之透射調整膜圖案31。該結果如圖3(a)所示，遮光部12成為具有沿著該遮光部12之外周形成為特定寬度之邊緣區域14與作為該邊緣區域14以外之部分之中央區域16(圖3(a)中為自遮光部12之外周離開而形成之區域)者。邊緣區域14中如上所述般，積層有相移膜圖案21與透射調整膜圖案31，於遮光部12之邊緣區域14以外(包含遮光部12之中央之部分)僅形成有相移膜圖案21。該相移膜圖案21與透射調整膜圖案31之積層順序可任意選擇，可與圖3(a)所示之積層順序上下相反。 In the present embodiment, the transparent substrate 10 is exposed to the light transmitting portion 11 of the light that is transmitted and exposed. On the other hand, in the light shielding portion 12, the phase shift film pattern 21 of the phase shift film 20 is formed as one of the optical films on the transparent substrate 10. Further, in the light shielding portion 12, a transmission adjustment film pattern 31 of the transmission adjustment film 30 is formed as an additional optical film along the edge region 14 having a specific width on the outer circumference. As a result, as shown in FIG. 3(a), the light shielding portion 12 has an edge region 14 formed to have a specific width along the outer periphery of the light shielding portion 12 and a central region 16 as a portion other than the edge region 14 (FIG. 3 (a) Among them, the area formed by the outer periphery of the light shielding portion 12 is formed. In the edge region 14, as described above, the phase shift film pattern 21 and the transmission adjustment film pattern 31 are laminated, and only the phase shift film pattern 21 is formed outside the edge region 14 of the light shielding portion 12 (the portion including the center of the light shielding portion 12). . The order of lamination of the phase shift film pattern 21 and the transmission adjustment film pattern 31 can be arbitrarily selected, and can be reversed from the stacking order shown in Fig. 3(a).
根據如此之構成，圖3(a)所示之光罩之遮光部12成為具備中央區域16與邊緣區域14者，該中央區域16係以相對於透射透光部11之上述曝光之光中所含之上述代表波長具有大致180度之相移量之方式形成；該邊緣區域14係相對於上述代表波長之相移量較上述中央區域16小，且由相對於上述代表波長具有50%以下之透射率之光學膜形成。 According to this configuration, the light shielding portion 12 of the mask shown in FIG. 3(a) is provided with the central region 16 and the edge region 14, and the central region 16 is in the above-mentioned exposed light with respect to the transmissive light transmitting portion 11. The representative wavelength region is formed to have a phase shift amount of approximately 180 degrees; the edge region 14 has a phase shift amount smaller than the central wavelength 16 and is 50% or less with respect to the representative wavelength. The optical film of transmittance is formed.
本發明之光罩之透光部11及遮光部12之尺寸無特別制約。然而，遮光部12與透光部11之寬度之和(線與間隙圖案之間距寬度P)為5μm以下時，顯著獲得本發明之效果。又，於透光部11之寬度為3μm以下 時，發明之效果更顯著。由於若間距寬度變小，隨之透光部11之尺寸變小，則繞射之影響變大，且藉由透光部11透射之光透射強度分佈曲線之峰下降，故為到達至被轉印體之光阻膜使光阻感光，易成為光量不足。原因係對於如此之現象，本發明之光罩可使異常消除。於透光部11之寬度為2μm以下之情形時，上述效果更大。 The size of the light transmitting portion 11 and the light blocking portion 12 of the photomask of the present invention is not particularly limited. However, when the sum of the widths of the light shielding portions 12 and the light transmitting portions 11 (the width P between the line and the gap patterns) is 5 μm or less, the effects of the present invention are remarkably obtained. Moreover, the width of the light transmitting portion 11 is 3 μm or less. At the time, the effect of the invention is more remarkable. When the pitch width becomes smaller and the size of the light transmitting portion 11 becomes smaller, the influence of the diffraction becomes larger, and the peak of the light transmission intensity distribution curve transmitted by the light transmitting portion 11 decreases, so that it is reached to be rotated. The photoresist film of the printed body makes the photoresist sensitive, and it is easy to become insufficient light. The reason is that the mask of the present invention can eliminate the abnormality for such a phenomenon. When the width of the light transmitting portion 11 is 2 μm or less, the above effect is greater.
繼而，於透光部11及遮光部12之寬度為3μm以下之情形時，本發明之效果較高。繼而，透光部11或遮光部12之任一者、或兩者之寬度為2.5μm以下之情形時，進而為2.0μm以下之情形時發明之效果較顯著。 Then, when the width of the light transmitting portion 11 and the light shielding portion 12 is 3 μm or less, the effect of the present invention is high. Then, when the width of either or both of the light transmitting portion 11 or the light shielding portion 12 is 2.5 μm or less, the effect of the invention is remarkable when the thickness is 2.0 μm or less.
繼而，於使用如此之轉印用圖案，在被轉印體上形成線與間隙圖案時，在被轉印體上形成間距寬度P為5μm以下之圖案之情形，或形成寬度3μm以下之線圖案、及/或寬度3μm以下之間隙圖案之情形時，可顯著地獲得本發明之效果。 Then, when a line and gap pattern is formed on the transfer target by using such a transfer pattern, a pattern having a pitch width P of 5 μm or less is formed on the transfer target, or a line pattern having a width of 3 μm or less is formed. In the case of a gap pattern having a width of 3 μm or less, the effects of the present invention can be remarkably obtained.
又，本發明之邊緣區域14較佳為形成為特定寬度且為固定寬度。所謂該特定寬度係超過0之任意值之寬度，可基於欲於被轉印體上獲得之光阻圖案之形狀而決定。於圖3(a)之形態中，邊緣區域14於遮光部12之兩邊緣對向且以相互相等之寬度形成。邊緣區域14之寬度設為使用之曝光裝置之解析極限以下之尺寸。又，作為具體之邊緣區域14之寬度尺寸，可設為0.1~2μm，較佳為設為0.1~1μm。 Further, the edge region 14 of the present invention is preferably formed to have a specific width and a fixed width. The width of any value in which the specific width exceeds 0 can be determined based on the shape of the photoresist pattern to be obtained on the object to be transferred. In the form of FIG. 3(a), the edge region 14 is opposed to both edges of the light shielding portion 12 and formed to have mutually equal widths. The width of the edge region 14 is set to a size below the resolution limit of the exposure device used. Further, the width of the specific edge region 14 may be 0.1 to 2 μm, preferably 0.1 to 1 μm.
若設定具有如上所述之寬度之邊緣區域14，則到達至被轉印體上之透射光之光強度分佈曲線可以如下方式設計：不獨立地解析邊緣區域14(不形成獨立之圖案形狀)，描繪平穩地連結對應於透光部11之光強度之波峰與對應於遮光部12之光強度之波谷之曲線。 If the edge region 14 having the width as described above is set, the light intensity distribution curve of the transmitted light reaching the transferred body can be designed in such a manner that the edge region 14 is not independently resolved (the independent pattern shape is not formed), A curve in which the peak of the light intensity corresponding to the light transmitting portion 11 and the valley corresponding to the light intensity of the light shielding portion 12 are smoothly connected is drawn.
於本形態中，相移膜20可相對於用於光罩之曝光之曝光之光中所含之代表波長將透射率設為20%以上。更佳為可將相對於相移膜20之代表波長之透射率設為20~80%，更佳為30~70%，進而較佳為40 ~70%。 In the present embodiment, the phase shift film 20 can set the transmittance to 20% or more with respect to the representative wavelength contained in the light for exposure to the exposure of the photomask. More preferably, the transmittance with respect to the representative wavelength of the phase shift film 20 can be set to 20 to 80%, more preferably 30 to 70%, and still more preferably 40. ~70%.
此處，作為包含於曝光之光之代表波長，於曝光之光包含複數波長之情形時(例如，使用包含i線、h線及g線之光源之情形時)，可設為該等波長之任一者。例如，可將i線設為代表波長。再者，相對於i線、h線及g線之任一者，均為充分滿足本發明之透射率及相移量之形態更佳。 Here, as a representative wavelength of the light included in the exposure, when the exposure light includes a plurality of wavelengths (for example, when a light source including an i line, an h line, and a g line is used), the wavelength can be set to Either. For example, the i line can be set to represent the wavelength. Further, it is preferable that any of the i-line, the h-line, and the g-line is sufficient to sufficiently satisfy the transmittance and the phase shift amount of the present invention.
又，此處所謂之透射率係透明基板10之將相對於上述代表波長之透射率設為100%之情形時之相移膜20之透射率。 Here, the transmittance is a transmittance of the phase shift film 20 when the transmittance of the transparent substrate 10 is 100% with respect to the representative wavelength.
又，相移膜20較佳為相對於上述代表波長之相移量為大致180度。此處，所謂大致180度係具有相對於入射至相移膜20之曝光之光之相位反相作用，藉由與和入射光為同相位之光之干涉，使繞行至遮光部12之透射光之光強度降低者。具體而言，相移膜20之相對於上述代表波長之相移量可為180±60度之範圍。若以弧度表記，則為(2n+2/3)π~(2n+4/3)π (n：整數)。 Further, the phase shift film 20 preferably has a phase shift amount of substantially 180 degrees with respect to the representative wavelength. Here, the substantially 180 degree system has a phase inversion effect with respect to the light incident to the phase shift film 20, and is transmitted to the light shielding portion 12 by interference with light of the same phase as the incident light. The light intensity of light is reduced. Specifically, the phase shift amount of the phase shift film 20 with respect to the above representative wavelength may be in the range of 180 ± 60 degrees. If it is expressed in radians, it is (2n+2/3)π~(2n+4/3)π (n: integer).
更佳為，相移膜20之相對於上述代表波長之相移量為180±30度(若以弧度表記，為(2n+5/6)π~(2n+7/6)π(n：整數))。 More preferably, the phase shift amount of the phase shift film 20 with respect to the above representative wavelength is 180 ± 30 degrees (if expressed in radians, it is (2n + 5 / 6) π ~ (2n + 7 / 6) π (n: Integer)).
再者，如下述般，相移膜20之素材較佳為於與透射調整膜30之間具有蝕刻選擇性。 Further, as described below, the material of the phase shift film 20 preferably has an etching selectivity with the transmission adjustment film 30.
用於本發明之光罩之透射調整膜30較佳為相對於上述代表波長之透射率為80%以下(即，0~80%)。此處，透射調整膜30中亦包含有實質上不會透射光(光學濃度OD(Optical Density)>3，即透射率未達0.1%)者。於本說明書中將如此之實質上不會透射光之膜亦稱為遮光膜。 The transmission adjustment film 30 used in the photomask of the present invention preferably has a transmittance of 80% or less (i.e., 0 to 80%) with respect to the above representative wavelength. Here, the transmission adjustment film 30 also includes substantially no transmitted light (optical density OD (Optical Density) > 3, that is, the transmittance is less than 0.1%). Such a film which does not substantially transmit light is also referred to as a light-shielding film in the present specification.
又，透射調整膜30亦可為透射一部分之光者。於此情形時(透射率為0.1%以上之情形時)，透射率為80%以下，較佳之範圍為10~80%，更佳為40~70%。 Further, the transmission adjustment film 30 may be a part that transmits a part of the light. In this case (when the transmittance is 0.1% or more), the transmittance is 80% or less, preferably 10 to 80%, more preferably 40 to 70%.
又，於透射調整膜30之透射率為0.1%以上之情形時，較佳為透射調整膜30相對於上述代表波長之相移量為90~270度。其若以弧度表記，則為(2n+1/2)π~(2n+3/2)π (n：整數)。 Further, when the transmittance of the transmission adjustment film 30 is 0.1% or more, the phase shift amount of the transmission adjustment film 30 with respect to the representative wavelength is preferably 90 to 270 degrees. If it is expressed in radians, it is (2n+1/2)π~(2n+3/2)π (n: integer).
更佳為，透射調整膜30之相對於上述代表波長之相移量為120~240度(若以弧度表記，為(2n+2/3)π~(2n+4/3)π(n：整數))。 More preferably, the phase shift amount of the transmission adjusting film 30 with respect to the above representative wavelength is 120 to 240 degrees (if expressed in radians, it is (2n+2/3) π~(2n+4/3)π(n: Integer)).
於本形態中，邊緣區域14如上所述般為相移膜20與透射調整膜30之積層，且以藉由該積層使相對於曝光之光中所含之代表波長之透射率成為50%以下之方式形成。上述積層之相對於代表波長之透射率較佳為30~50%，更佳為35~45%。由上述積層產生之相移量相對於上述代表波長為±90度，更佳為±60度以內，進而較佳為±45度之範圍。 In the present embodiment, the edge region 14 is a laminate of the phase shift film 20 and the transmission adjustment film 30 as described above, and the transmittance of the representative wavelength contained in the light to be exposed is 50% or less by the laminate. The way it is formed. The transmittance of the above laminated layer with respect to the representative wavelength is preferably from 30 to 50%, more preferably from 35 to 45%. The amount of phase shift generated by the above-mentioned laminate is ±90 degrees with respect to the above representative wavelength, more preferably within ±60 degrees, and still more preferably within ±45 degrees.
圖3(a)所示之本發明之相移膜20及透射調整膜30(相移膜圖案21及透射調整膜圖案31)雖分別以單層構成，但亦可為任一者或兩者為由複數層之積層形成者。圖3(b)中，圖示本發明之光罩具有之各膜之功能。 The phase shift film 20 and the transmission adjustment film 30 (the phase shift film pattern 21 and the transmission adjustment film pattern 31) of the present invention shown in Fig. 3 (a) are each formed of a single layer, but may be either or both It is formed by a laminate of a plurality of layers. In Fig. 3(b), the function of each of the films of the photomask of the present invention is illustrated.
利用圖3(b)之<1>、<2>、及<3>表示使用具有如圖3(a)所示般之轉印用圖案(例如線與間隙圖案)之光罩，並利用曝光裝置進行光照射時，被轉印體上之光阻膜40接收之透射光之光強度分佈成分。<1>係透射透光部11之圖案之光之強度分佈。透射透光部11之圖案之光藉由繞射之影響，於對應於遮光部12之部分中亦產生某種程度之繞行，因此如<1>之曲線所示，描繪具有某種寬度之波型之分佈。然而，若圖案變微細，圖案之間距變小(例如遮光部12之圖案及/或透光部11之圖案之寬度為3μm以下)，則接近於圖2(d)所示之狀態，無法形成用以進行線與間隙圖案之蝕刻之光阻圖案。 The <1>, <2>, and <3> of FIG. 3(b) are used to indicate that a photomask having a transfer pattern (for example, a line and a gap pattern) as shown in FIG. 3(a) is used, and exposure is used. The light intensity distribution component of the transmitted light received by the photoresist film 40 on the transfer target when the device is irradiated with light. <1> is an intensity distribution of light transmitted through the pattern of the light transmitting portion 11. The light transmitted through the pattern of the light-transmitting portion 11 is also affected by the diffraction, and a certain degree of bypass is also generated in the portion corresponding to the light-shielding portion 12, so that the curve has a certain width as shown by the curve of <1>. Distribution of wave patterns. However, if the pattern becomes fine and the distance between the patterns becomes small (for example, the pattern of the light shielding portion 12 and/or the width of the pattern of the light transmitting portion 11 is 3 μm or less), it is close to the state shown in FIG. 2(d) and cannot be formed. A photoresist pattern for etching the line and gap patterns.
因此，為使相當於遮光部12之部分之光強度有效地降低，於本 形態中使用相移膜20形成中央區域16。圖3(b)之<3>中顯示由相移膜20形成之中央區域16之透射光之強度分佈成分。由於該相移膜20具有特定之相移量，故透射相移膜20之光相對於透射透光部11之曝光之光中藉由繞射而繞行至遮光部12之成分，利用干涉將其抵消，從而降低該部分之光強度。再者，由於相移膜20之透射光藉由進行相移，相對於透射透光部11之曝光之光利用干涉將其抵消，故於圖3(b)中，將<3>之光之強度作為負側之強度圖示。 Therefore, in order to effectively reduce the light intensity corresponding to the portion of the light shielding portion 12, The central region 16 is formed using the phase shift film 20 in the morphology. The intensity distribution component of the transmitted light in the central region 16 formed by the phase shift film 20 is shown in <3> of Fig. 3(b). Since the phase shift film 20 has a specific phase shift amount, the light transmitted through the phase shift film 20 is diffracted to the light-shielding portion 12 by the diffraction of the light transmitted through the light-transmitting portion 11, and interference is utilized. It cancels out, thereby reducing the light intensity of the portion. Furthermore, since the transmitted light of the phase shift film 20 is phase-shifted, the light that is exposed to the light-transmitting portion 11 is cancelled by interference, so in FIG. 3(b), the light of <3> is used. The intensity is shown as the intensity of the negative side.
再者，本發明之光罩中，亦可替代形成相移膜20，而以發揮相同之作用之方式於透明基板10之表面形成刻蝕。該情形時，可將相當於圖3(a)之遮光部12之區域之透明基板10相應於所欲獲得之相移量程度之厚度自表面刻蝕去除。 Further, in the photomask of the present invention, instead of forming the phase shift film 20, etching may be formed on the surface of the transparent substrate 10 in such a manner as to perform the same function. In this case, the transparent substrate 10 corresponding to the region of the light shielding portion 12 of Fig. 3(a) can be removed from the surface etching in accordance with the thickness of the desired phase shift amount.
由上述相移膜20等產生之光強度降低之效果仍會因繞射之影響而波及透光部11，故有可能導致降低透光部11之光強度分佈之波峰。因此在本發明中，於邊緣區域14中，進而使自遮光部12繞行至透光部11之反轉相位之光反轉，使與透光部11之透射光同相位之成分增加，提高透光部11之光強度波峰。因此，於本形態中，將透射調整膜30配置於遮光部12之邊緣附近。於圖3(b)之<2>中顯示由透射調整膜30形成之邊緣區域14中之透射光之光強度分佈成分。 The effect of reducing the intensity of light generated by the phase shift film 20 or the like may still affect the light transmitting portion 11 due to the influence of the diffraction, which may cause the peak of the light intensity distribution of the light transmitting portion 11 to be lowered. Therefore, in the present invention, in the edge region 14, the light which is rotated from the light-shielding portion 12 to the reverse phase of the light-transmitting portion 11 is reversed, so that the component in phase with the transmitted light of the light-transmitting portion 11 is increased, and the component is increased. The light intensity peak of the light transmitting portion 11. Therefore, in the present embodiment, the transmission adjustment film 30 is disposed in the vicinity of the edge of the light shielding portion 12. The light intensity distribution component of the transmitted light in the edge region 14 formed by the transmission adjustment film 30 is shown in <2> of Fig. 3(b).
進行如上所述之光強度分佈調整之結果如圖3(c)所示，可相對於二元遮罩之透射光強度分佈，提高透光部11之光強度波峰，進一步降低遮光部12之光強度波谷。藉此，光強度分佈曲線之對比度變高，形成於被轉印體上之光阻圖案形狀變良好。即，由於光阻圖案之側面形狀得到改善(傾斜角變大)，故作為蝕刻遮罩，有助於加工精度之提高。 As a result of performing the light intensity distribution adjustment as described above, as shown in FIG. 3(c), the light intensity peak of the light transmitting portion 11 can be increased with respect to the transmitted light intensity distribution of the binary mask, and the light of the light shielding portion 12 can be further reduced. Intensity trough. Thereby, the contrast of the light intensity distribution curve becomes high, and the shape of the photoresist pattern formed on the object to be transferred becomes good. That is, since the side shape of the photoresist pattern is improved (the inclination angle is increased), the etching mask contributes to an improvement in processing precision.
再者，邊緣區域於上述態樣中為相移膜20與透射調整膜30之積層，但於採用其以外之構成之情形時，作為邊緣區域之透射率亦與上 述相同，相對於曝光之光之代表波長之透射率可設為50%以下，較佳為設為30~50%，更佳為設為35~45%。此情形時之邊緣區域之相移量期望設為±90度以內。 Further, the edge region is a laminate of the phase shift film 20 and the transmission adjustment film 30 in the above-described aspect, but in the case of using a configuration other than the above, the transmittance as the edge region is also the same as that of the upper region. Similarly, the transmittance with respect to the representative wavelength of the exposed light can be 50% or less, preferably 30 to 50%, and more preferably 35 to 45%. In this case, the amount of phase shift in the edge region is desirably set to within ±90 degrees.
又，上述中雖就相移膜20形成於透明基板而形成之中央區域進行了說明，但於採用其以外之構成之情形時，亦可將透射率設為20%以上(更佳為20~80%，更佳為30~70%，進而較佳為40~70%)，相移量可設為180±60度，更佳為設為180±30度。 Further, although the central region in which the phase shift film 20 is formed on the transparent substrate has been described above, the transmittance may be set to 20% or more (more preferably 20 to 20). 80%, more preferably 30 to 70%, and further preferably 40 to 70%), the phase shift amount can be set to 180 ± 60 degrees, more preferably set to 180 ± 30 degrees.
接著，就本發明之光罩之製造方法之例，參照圖7，於以下進行說明。 Next, an example of a method of manufacturing a photomask according to the present invention will be described below with reference to Fig. 7 .
(1)準備於透明基板10上依序形成相移膜20與透射調整膜30，進而形成光阻膜40之空白光罩。(圖7(a)) (1) The phase shift film 20 and the transmission adjustment film 30 are sequentially formed on the transparent substrate 10, and a blank mask of the photoresist film 40 is formed. (Fig. 7(a))
(2)使用描繪機，描繪邊緣區域14形成用圖案。 (2) A pattern for forming the edge region 14 is drawn using a drawing machine.
(3)將顯影、形成之光阻圖案41作為遮罩，蝕刻透射調整膜30。(圖7(b)) (3) The developed and formed photoresist pattern 41 is used as a mask, and the transmission adjustment film 30 is etched. (Fig. 7(b))
(4)剝離光阻，再次於整個面形成光阻膜40後，描繪遮光部12形成用圖案。(圖7(c)及(d)) (4) After the photoresist is peeled off and the photoresist film 40 is formed again over the entire surface, the pattern for forming the light shielding portion 12 is drawn. (Figure 7(c) and (d))
(5)將顯影、形成之光阻圖案51作為遮罩，蝕刻相移膜20。(圖7(b)) (5) The phase shift film 20 is etched by using the developed and formed photoresist pattern 51 as a mask. (Fig. 7(b))
(6)剝離光阻。(圖7(f)) (6) Stripping the photoresist. (Fig. 7(f))
再者，相移膜20及透射調整膜30之蝕刻既可為乾式蝕刻亦可為濕式蝕刻。蝕刻劑可使用公知者。 Furthermore, the etching of the phase shift film 20 and the transmission adjustment film 30 may be either dry etching or wet etching. A known one can be used as the etchant.
作為相移膜20之材料，例如，可列舉金屬矽化物化合物(TaxSiy、MoxSiy、WxSiy或其等之氮化物、氮氧化物等)、Si化合物(SiO2、SOG)、Zr合金(ZrSixOy等)、ITO(氧化銦錫)、ZrO2(氧化鋯)、Al2O3(氧化鋁)、WO3(氧化鎢)及TiO2(氧化鈦)等。 Examples of the material of the phase shift film 20 include a metal telluride compound (a nitride such as Ta x Si y , Mo x Si y , W x Si y or the like, an oxynitride, etc.), and a Si compound (SiO 2 , SOG), Zr alloy (ZrSi x O y, etc.), ITO (indium tin oxide), ZrO 2 (zirconia), Al 2 O 3 (alumina), WO 3 (tungsten oxide), and TiO 2 (titanium oxide) .
作為透射調整膜30之材料，除Cr化合物(Cr之氧化物、氮化物、 碳化物、氮氧化物、碳氮氧化物)、Si化合物(SiO2、SOG)、Zr合金(ZrSixOy等)及金屬矽化物化合物(TaxSiy、MoxSiy、WxSiy或其等之氮化物、氮氧化物等)等之外，可列舉作為上述相移膜20之材料列舉之ITO(氧化銦錫)、ZrO2(氧化鋯)、Al2O3(氧化鋁)、WO3(氧化鎢)及TiO2(氧化鈦)等。然而，由於若相移膜20與透射調整膜30之材料相同，則相互無蝕刻選擇性，故較佳為設為不同之材料。 As the material of the transmission adjustment film 30, in addition to Cr compounds (oxides, nitrides, carbides, oxynitrides, oxycarbonitrides), Si compounds (SiO 2 , SOG), Zr alloys (ZrSi x O y, etc.) And a metal telluride compound (a nitride such as Ta x Si y , Mo x Si y , W x Si y or the like, an oxynitride or the like), and the like, and ITO as a material of the phase shift film 20 is exemplified. (Indium tin oxide), ZrO 2 (zirconia), Al 2 O 3 (alumina), WO 3 (tungsten oxide), and TiO 2 (titanium oxide). However, since the phase shift film 20 and the material of the transmission adjustment film 30 are the same, there is no etching selectivity, and therefore it is preferable to use a different material.
作為兩膜之組合之例，若相互有蝕刻選擇性則無特別制約。例如對相移膜20使用ITO，對透射調整膜30使用Cr化合物，或對相移膜20使用ZrO2，對透射調整膜30使用Cr化合物等作為較佳之例列舉。 As an example of the combination of the two films, there is no particular restriction on the etching selectivity. For example, ITO is used for the phase shift film 20, Cr compound is used for the transmission adjustment film 30, ZrO 2 is used for the phase shift film 20, and a Cr compound or the like is used for the transmission adjustment film 30 as a preferable example.
本發明之光罩之用途並無特別限定。本發明之光罩例如於液晶顯示裝置(LCD：Liquid Crystal Display)之透明電極圖案等平板顯示器之範圍中用於多種用途。由於如此用途之線與間隙圖案之形成係若線寬為3μm以下則難度較高，故本發明之效果較顯著。 The use of the photomask of the present invention is not particularly limited. The photomask of the present invention is used for various purposes in the range of, for example, a flat panel display such as a transparent electrode pattern of a liquid crystal display (LCD). Since the formation of the line and the gap pattern for such use is difficult if the line width is 3 μm or less, the effect of the present invention is remarkable.
詳細而言，轉印用圖案為線與間隙圖案時，間距寬度P(轉印用圖案之線寬度ML、間隙寬度MS之總計)為6μm以下，更佳為5μm以下時發明效果較顯著，此時，ML為2.8μm以下，更佳為2.5μm以下，進而較佳為2μm以下時，發明之效果更顯著。關於MS，亦於2.8μm以下，更佳為2.5μm以下，進而較佳為2μm以下時，發明之效果更顯著。再者，於透光部之透射光量變小即ML>MS時，本發明之效果更加顯著。 Specifically, when the transfer pattern is a line and a gap pattern, the pitch width P (the total of the line width ML of the transfer pattern and the gap width MS) is 6 μm or less, and more preferably 5 μm or less. In the case where ML is 2.8 μm or less, more preferably 2.5 μm or less, and further preferably 2 μm or less, the effect of the invention is more remarkable. When the MS is also 2.8 μm or less, more preferably 2.5 μm or less, and still more preferably 2 μm or less, the effect of the invention is more remarkable. Further, when the amount of transmitted light in the light transmitting portion becomes small, that is, ML>MS, the effect of the present invention is more remarkable.
又，圖3(a)中，雖列舉將線與間隙圖案作為轉印用圖案之情形之例，但本發明之光罩之轉印用圖案之形狀亦無制約。可將本發明之光罩應用於孔圖案。 In addition, in the case of the case where the line and the gap pattern are used as the transfer pattern in FIG. 3(a), the shape of the transfer pattern of the photomask of the present invention is not limited. The photomask of the present invention can be applied to a hole pattern.
本發明進而包含使用該光罩之圖案轉印方法。使用本發明之光罩之圖案轉印方法可不增加曝光裝置之照射光量地使微細之圖案轉印。因此，對節能、或曝光時間之縮短、生產效率之提高賦予顯著之 優點。 The present invention further includes a pattern transfer method using the photomask. The pattern transfer method using the photomask of the present invention can transfer a fine pattern without increasing the amount of irradiation light of the exposure device. Therefore, it contributes to energy saving, shortening of exposure time, and improvement of production efficiency. advantage.
於本發明之轉印方法中，可使用標準之LCD用曝光裝置。該情形時，例如，可將數值孔徑NA設為0.06~0.10，將相干因素(coherence factor)σ設為0.5~1.0之範圍。如此之曝光裝置一般將3μm左右作為解析極限。作為曝光之光源，較佳為使用包含365~435nm(i線~g線)之光源。 In the transfer method of the present invention, a standard exposure apparatus for LCD can be used. In this case, for example, the numerical aperture NA may be set to 0.06 to 0.10, and the coherence factor σ may be set to a range of 0.5 to 1.0. Such an exposure apparatus generally has a resolution limit of about 3 μm. As the light source for exposure, it is preferable to use a light source including 365 to 435 nm (i line to g line).
當然，本發明亦可於使用更廣範圍之曝光裝置之轉印時應用。例如，NA可設為0.06~0.14，或0.06~0.15之範圍。NA超過0.08之高解析度之曝光裝置中亦產生需求，亦可應用於該等。 Of course, the invention can also be applied to the transfer using a wider range of exposure devices. For example, NA can be set to a range of 0.06 to 0.14, or 0.06 to 0.15. A demand is also generated in an exposure apparatus having a high resolution of more than 0.08, and can also be applied to such.
如此之曝光裝置，可使用包含i線、h線或g線且包含該等全部之照射光(由於相對於單一光源，為較寬之光源，故以下亦稱為寬光)作為光源。該情形時，所謂代表波長如上所述般可設為i線、h線或g線之任一者。 As such an exposure apparatus, it is possible to use, as a light source, an i-line, an h-line or a g-line including all of the illumination light (which is a wide light source with respect to a single light source, hereinafter also referred to as wide light). In this case, the representative wavelength may be any of the i line, the h line, or the g line as described above.
又，本發明亦包含使用本發明之光罩之平板顯示器之製造方法。例如，使用本發明之光罩，進行TFT之電極圖案形成，或進行TFT之接觸孔圖案之形成等，其用途並無限制。 Further, the present invention also encompasses a method of manufacturing a flat panel display using the photomask of the present invention. For example, by using the photomask of the present invention, electrode pattern formation of a TFT or formation of a contact hole pattern of a TFT is performed, and the use thereof is not limited.
進而，本發明包含可經由圖案化製成上述光罩之空白光罩。該空白光罩之特徵在於：於透明基板10上積層有相移膜20與透射調整膜30，該相移膜20係相對於曝光上述光罩時之曝光之光中所含之代表波長之光具有20%以上之透射率及大致180度之相移量；該透射調整膜30係相對於上述代表波長之光具有80%以下之透射率及90~270度之相移量。 Further, the present invention encompasses a blank reticle that can be fabricated into a reticle via patterning. The blank mask is characterized in that a phase shift film 20 and a transmission adjustment film 30 are laminated on the transparent substrate 10, and the phase shift film 20 is light having a representative wavelength contained in the exposed light when the mask is exposed. The transmittance adjustment film 30 has a phase shift amount of approximately 180 degrees, and the transmission adjustment film 30 has a transmittance of 80% or less and a phase shift amount of 90 to 270 degrees with respect to the light of the representative wavelength.
又，作為本發明之空白光罩，亦可適當使用以下者。即，一種空白光罩，其特徵在於：於透明基板上具有由相移膜與透射調整膜積層而成之積層膜，上述相移膜相對於曝光上述光罩時之曝光之光中所含之代表波長之光具有20%以上之透射率及90~270度之相移量，上 述積層膜相對於上述代表波長之光具有50%以下之透射率及±90度以內之相移量。 Further, as the blank mask of the present invention, the following may be suitably used. That is, a blank mask having a laminated film formed by laminating a phase shift film and a transmission adjusting film on a transparent substrate, wherein the phase shift film is included in exposure light when the mask is exposed; The light representing the wavelength has a transmittance of 20% or more and a phase shift amount of 90 to 270 degrees. The laminated film has a transmittance of 50% or less and a phase shift amount within ±90 degrees with respect to the light of the above representative wavelength.
上述各膜之較佳之態樣如上所述。又，該等膜可藉由濺鍍法等公知之成膜法形成於透明基板10上。 Preferred aspects of each of the above films are as described above. Further, these films can be formed on the transparent substrate 10 by a known film formation method such as sputtering.
如自以上而闡明，本發明之光罩可消除因微細圖案化產生之透射光之光量不足，或進而減少曝光所需之照射光量，且形成優異形狀之光阻圖案作為蝕刻遮罩。於先前難以圖案化之微細圖案中實現如此之光阻圖案之意義較大。本發明之光罩尤其於以液晶顯示裝置為代表之平板顯示器之製造領域中有利地使用。若使用本發明之光罩，即便於使用先前之LCD用曝光裝置之情形時，亦可不會增加照射光量，確保用以使被轉印體上之光阻膜感光之充足之曝光光量，提高對比度，故可以低成本進行轉印圖案之微細化。 As described above, the photomask of the present invention can eliminate the insufficient amount of light transmitted by the fine patterning or reduce the amount of irradiation light required for exposure, and form a photoresist pattern having an excellent shape as an etching mask. It is of great significance to realize such a photoresist pattern in a fine pattern that was previously difficult to pattern. The photomask of the present invention is particularly advantageously used in the field of manufacturing flat panel displays typified by liquid crystal display devices. According to the reticle of the present invention, even when the exposure device for the LCD is used, the amount of exposure light is not increased, and the amount of exposure light for sensitizing the photoresist film on the transfer target is ensured, and the contrast is improved. Therefore, the transfer pattern can be miniaturized at low cost.
針對具有圖4所示之4種轉印用圖案之光罩，進行關於光強度分佈曲線及根據其形成之轉印體之光阻圖案形狀之光學模擬。作為模擬條件，考慮用於轉印之曝光裝置之光學條件，以如下方式設定。 With respect to the photomask having the four transfer patterns shown in FIG. 4, an optical simulation of the light intensity distribution curve and the shape of the resist pattern of the transfer body formed therewith was performed. As the simulation condition, the optical conditions of the exposure apparatus for transfer are considered, and are set as follows.
間距寬度 4.0μm(1：1之線與間隙圖案) Pitch width 4.0μm (1:1 line and gap pattern)
數值孔徑NA 0.083 Numerical aperture NA 0.083
相干因素σ 0.8 Coherence factor σ 0.8
各波長之強度比 g：h：i=1：1：1 Intensity ratio of each wavelength g:h:i=1:1:1
相移膜20之相移量 180度 Phase shift film 20 phase shift amount 180 degrees
圖5中，顯示利用圖4所示之4種轉印用圖案之光罩之藉由上述光學模擬獲得之透射光之光強度分佈曲線。圖5係顯示利用曝光裝置曝光具有圖4所示之4種轉印用圖案之光罩之情形時，光阻膜40受到之光強度分佈者。於圖4所示之各樣本中，透射率及相移量係將代表波長設為h線者。 In Fig. 5, the light intensity distribution curve of the transmitted light obtained by the above optical simulation using the photomasks of the four transfer patterns shown in Fig. 4 is shown. Fig. 5 is a view showing a distribution of light intensity received by the photoresist film 40 when the photomask having the four types of transfer patterns shown in Fig. 4 is exposed by an exposure device. In each of the samples shown in Fig. 4, the transmittance and the phase shift amount are those in which the representative wavelength is set to the h line.
圖4所示之各個樣本A、B、C及D係具有間距寬度P=4μm(線寬度ML=間隙寬度MS=2μm)之線與間隙圖案作為轉印用圖案之遮罩。 Each of the samples A, B, C, and D shown in Fig. 4 has a line having a pitch width of P = 4 μm (line width ML = gap width MS = 2 μm) and a gap pattern as a mask for the transfer pattern.
作為標準樣本之二元遮罩(由OD為3以上之遮光膜形成轉印用圖案(線與間隙圖案)。設為間距寬度P=4μm(線寬度ML=間隙寬度MS=2μm)。 A binary mask as a standard sample (a pattern for transfer (line and gap pattern) was formed from a light-shielding film having an OD of 3 or more. The pitch width P = 4 μm (line width ML = gap width MS = 2 μm).
藉由將透射率4%、相移量45度之半透光膜圖案化，製作與上述樣本A相同之轉印用圖案。 A transfer pattern similar to that of the sample A described above was produced by patterning a semi-transmissive film having a transmittance of 4% and a phase shift amount of 45 degrees.
藉由將相移膜20圖案化而形成間距寬度P=4μm(線寬度ML=間隙寬度MS=2μm)之線與間隙圖案，進而，沿著其線圖案(遮光部12)之兩邊緣，分別積層0.5μm寬度之透射調整膜30。因此，中央有寬度1μm且僅為相移膜20之部分。相移膜20係將相移量設為180度，透射率設為70%，透射調整膜30使用相移量為180度，透射率為57%者。 By patterning the phase shift film 20, a line and gap pattern having a pitch width P = 4 μm (line width ML = gap width MS = 2 μm) is formed, and further, along both edges of the line pattern (light shielding portion 12), respectively A transmission adjustment film 30 having a width of 0.5 μm is laminated. Therefore, the center has a width of 1 μm and is only a part of the phase shift film 20. The phase shift film 20 has a phase shift amount of 180 degrees and a transmittance of 70%, and the transmission adjustment film 30 has a phase shift amount of 180 degrees and a transmittance of 57%.
藉由將遮光膜圖案化，形成間距寬度4μm(線寬度ML=1μm，間隙寬度MS=3μm)之線與間隙圖案，進而，積層形成由相同間距寬度(線寬度ML=2μm，間隙寬度MS=2μm)之相移膜(透射率5%，相移量180度)形成之圖案。僅寬度2μm之線圖案之中央部成為遮光膜圖案與相移膜圖案之積層構造。 By patterning the light-shielding film, a line and gap pattern having a pitch width of 4 μm (line width ML = 1 μm, gap width MS = 3 μm) is formed, and further, the laminate is formed by the same pitch width (line width ML = 2 μm, gap width MS = 2 μm) phase shift film (transmittance 5%, phase shift amount 180 degrees) formed a pattern. Only the central portion of the line pattern having a width of 2 μm is a laminated structure of the light shielding film pattern and the phase shift film pattern.
若參照圖5，則相對於樣本A，樣本B之光強度整體變高。因此，可知能夠某種程度地解決上述圖1中說明之光量不足之問題。然而，與樣本A之曲線相比較，到達至曲線之峰之傾斜度大致相同，對比度未變高。該情形時，形成於被轉印體上之光阻圖案之側面形狀中，亦 幾乎無增大傾斜角之方向上之改善。 Referring to FIG. 5, the light intensity of the sample B becomes high as a whole with respect to the sample A. Therefore, it can be understood that the problem of insufficient light amount described in the above FIG. 1 can be solved to some extent. However, compared to the curve of the sample A, the inclination of the peak reaching the curve is substantially the same, and the contrast does not become high. In this case, the side shape of the photoresist pattern formed on the transferred body is also There is almost no improvement in the direction of increasing the tilt angle.
於樣本D中，藉由相移膜之作用而透射光量整體下降，相對於光阻膜之光量不足較樣本A之二元遮罩更嚴重。又，彎曲之傾斜亦與樣本A之二元遮罩大致同等，未能觀察到對比度之改善。 In Sample D, the amount of transmitted light decreased as a whole by the action of the phase shifting film, and the amount of light relative to the photoresist film was insufficient compared to the binary mask of Sample A. Moreover, the inclination of the bending was also substantially the same as that of the binary mask of the sample A, and improvement in contrast was not observed.
與此相對，於樣本C(本發明之光罩)中，由於相對於樣本A波峰之光強度變高，故可消除到達至光阻膜40之光之強度不足。或，除此之外亦可使曝光裝置之照射光量減少。該情形時，由於曝光照射光量與掃描曝光所需之時間相關，故藉由照射光量之減少，可實現曝光時間之縮短，即生產效率之提高。又，如自圖5而明確般，可知光強度分佈曲線之傾斜亦變大，從而被轉印體上之光阻圖案之側面形狀得到改善。 On the other hand, in the sample C (the reticle of the present invention), since the light intensity with respect to the peak of the sample A becomes high, the intensity of light reaching the photoresist film 40 can be eliminated. Alternatively, in addition to this, the amount of illumination light of the exposure device can be reduced. In this case, since the amount of exposure light is related to the time required for scanning exposure, the reduction in exposure time, that is, the improvement in production efficiency, can be achieved by the reduction in the amount of illumination light. Further, as is clear from Fig. 5, it is understood that the inclination of the light intensity distribution curve is also increased, and the side shape of the photoresist pattern on the transferred body is improved.
此處，所謂傾斜角，如圖6所示，將被轉印體上之光阻圖案之側面形狀垂直於被轉印體面之情形作為90度(最大)而表現。將被轉印體上之光阻圖案作為蝕刻遮罩蝕刻被加工體時，傾斜角越大(越接近90度)，曝光光量之不均勻等相對於步驟之變動之線寬變動越小。因此，傾斜角越大(越接近90度)，評價為狀態越良好。 Here, as shown in FIG. 6, the inclination angle is expressed as 90 degrees (maximum) when the side surface shape of the photoresist pattern on the transfer target is perpendicular to the surface to be transferred. When the photoresist pattern on the transfer target is used as an etching mask to etch the object to be processed, the inclination angle is larger (the closer to 90 degrees), and the variation in the amount of exposure light or the like is smaller with respect to the fluctuation of the line width of the step. Therefore, the larger the inclination angle (the closer to 90 degrees), the better the state is evaluated.
再者，本說明書之光強度分佈曲線、及根據其形成之光阻圖案形狀係藉由光學模擬而獲得者。模擬條件係考慮用於轉印之曝光裝置之光學條件而設定者。 Furthermore, the light intensity distribution curve of the present specification and the shape of the photoresist pattern formed therefrom are obtained by optical simulation. The simulation conditions are set in consideration of the optical conditions of the exposure device used for transfer.
再者，代表波長可設為i線、h線及g線之任一者。於模擬中，為了單純化可將該等之強度比設為1：1：1，或亦可設為考慮實際之曝光裝置之強度比之比例。 Furthermore, the representative wavelength can be set to any of the i line, the h line, and the g line. In the simulation, the intensity ratio of these may be set to 1:1:1 for simplification, or may be set to the ratio of the intensity ratio of the actual exposure apparatus.
如根據上述所理解般，本發明之光罩係將由相移膜20產生之曝光之光相位之反轉作用使用於由自透光部11透射並繞行之繞射光產生之光強度降低。於對應於遮光部12之被轉印體上之位置且本來應該遮光之部位存在來自透光部11之繞射光之繞行，故由光之干涉引起之抵 消作用有效地發揮作用。另一方面，於遮光部12之邊緣附近(邊緣區域14)，實質上未發現相移膜20之作用。原因係藉由透射調整膜30，該部分之相移作用降低(未反轉)。 As understood from the above, the photomask of the present invention uses the reversal effect of the phase of the exposed light generated by the phase shift film 20 to reduce the light intensity generated by the diffracted light transmitted from the light transmitting portion 11 and bypassed. The portion of the light-receiving portion 12 corresponding to the position on the object to be transferred and which is supposed to be shielded from light is surrounded by the diffracted light from the light-transmitting portion 11, so that the interference is caused by the interference of the light. The elimination works effectively. On the other hand, in the vicinity of the edge (edge region 14) of the light shielding portion 12, substantially no effect of the phase shift film 20 was observed. The reason is that the phase shifting effect of the portion is lowered (not reversed) by the transmission adjusting film 30.
公知之所謂之相移遮罩係於圖案邊緣使相位反轉，提高透射光之對比度，但本發明係於圖案邊緣反倒使相位反相作用降低，在該方面正相反。 The so-called phase shift mask is known to invert the phase at the edge of the pattern to increase the contrast of the transmitted light, but the present invention is such that the edge of the pattern is reversed to reduce the phase inversion effect, which is the opposite.
根據本發明者等人，藉由存在該邊緣區域14，雖於對應於遮光部12之區域有效地降低光強度，但未降低對應於透光部11之區域之光強度峰值。反倒，藉由存在該邊緣區域14，可提高對應於透光部11之區域之光強度峰值。該含義下，邊緣區域14亦發揮作為輔助透射部11之光之透射之透射輔助圖案之功能。 According to the present inventors, by the presence of the edge region 14, the light intensity is effectively reduced in the region corresponding to the light shielding portion 12, but the light intensity peak corresponding to the region corresponding to the light transmitting portion 11 is not lowered. Conversely, by the presence of the edge region 14, the peak of the light intensity corresponding to the region of the light transmitting portion 11 can be increased. In this sense, the edge region 14 also functions as a transmission assisting pattern for transmitting the light of the transmissive portion 11.
再者，本發明除上述相移膜、透射輔助膜之外，只要不妨礙本發明之作用，則不排除併用其他膜及/或基板構造。 Further, in addition to the phase shift film and the transmission auxiliary film described above, the present invention does not exclude the use of other films and/or substrate structures as long as the effects of the present invention are not impaired.
10‧‧‧透明基板 10‧‧‧Transparent substrate
11‧‧‧透光部 11‧‧‧Transmission Department
12‧‧‧遮光部 12‧‧‧Lighting Department
14‧‧‧邊緣區域 14‧‧‧Edge area
16‧‧‧中央區域 16‧‧‧Central area
21‧‧‧相移膜圖案 21‧‧‧ phase shift film pattern
31‧‧‧透射調整膜圖案 31‧‧‧Transmission adjustment film pattern
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| KR101528973B1 (en) | 2015-06-15 |
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| KR20140099427A (en) | 2014-08-12 |
| TWI605300B (en) | 2017-11-11 |
| CN105573046A (en) | 2016-05-11 |
| KR20130135751A (en) | 2013-12-11 |
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| JP6093117B2 (en) | 2017-03-08 |
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| TWI516857B (en) | 2016-01-11 |
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