TW201348506A - Method for cleaning walls of processing chamber of CVD reactor - Google Patents
Method for cleaning walls of processing chamber of CVD reactor Download PDFInfo
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- TW201348506A TW201348506A TW102110632A TW102110632A TW201348506A TW 201348506 A TW201348506 A TW 201348506A TW 102110632 A TW102110632 A TW 102110632A TW 102110632 A TW102110632 A TW 102110632A TW 201348506 A TW201348506 A TW 201348506A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
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- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
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Abstract
Description
本發明係有關於一種在CVD過程實施完畢後清潔CVD反應器之處理室之壁的方法,其中,藉由進氣機構將蝕刻氣體送入該處理室,利用該蝕刻氣體來去除該CVD過程中在該等壁上所形成的附生覆蓋物。 The invention relates to a method for cleaning the wall of a processing chamber of a CVD reactor after the CVD process is completed, wherein an etching gas is sent into the processing chamber by an air inlet mechanism, and the etching gas is used to remove the CVD process. Epiphytic covering formed on the walls.
專利文獻DE 10 2007 009 145 A1描述一種採用HVPE及MOCVD工藝沉積III-IV半導體層的方法。該案中的處理室採用旋轉對稱配置方案,其中,對稱中心中設有一進氣機構,其具有多個上下疊置的進氣區,不同的處理氣體在生長過程中經由此等進氣區進入處理室。處理氣體自徑向位於內部的進氣機構出發穿過處理室進入包圍該處理室的排氣環,從而排出處理室。在塗佈過程實施完畢並將基板自處理室取出後,可經由進氣機構將蝕刻氣體(如HCI或Cl2)輸入處理室。利用該蝕刻氣體來去除座體之壁上(亦即,處理室頂部上及座體上)的附生覆蓋物。 A method for depositing a III-IV semiconductor layer using HVPE and MOCVD processes is described in the patent document DE 10 2007 009 145 A1. The processing chamber in the case adopts a rotationally symmetric arrangement, wherein the symmetry center is provided with an air intake mechanism having a plurality of upper and lower air intake regions, and different processing gases enter through the air intake regions during the growth process. Processing room. The process gas exits the process chamber from the radially inwardly located intake mechanism into the exhaust ring surrounding the process chamber to exit the process chamber. After the coating process is completed and the substrate is removed from the processing chamber, an etching gas (such as HCI or Cl 2 ) can be introduced into the processing chamber via an air intake mechanism. The etching gas is used to remove the epitaxial covering on the wall of the seat (i.e., on the top of the processing chamber and on the seat).
本發明之目的在於更有效地清潔處理室。 It is an object of the invention to clean the process chamber more efficiently.
本發明用以達成上述目的之解決方案為申請專利範圍所給出的發明。本發明首先提出,以若干相互銜接的步驟實施該清潔方法,其中,以不同的步驟清潔該處理室之壁的不同表面區域。為此, 將該蝕刻氣體依次經由不同的進氣區送入該處理室,使得先後對該等壁的不同表面區域施加不同強度的蝕刻氣體。利用該等不同的蝕刻步驟設置該處理室內的流動狀態,使得該蝕刻氣體大致而言僅(至少強化地)作用於所選表面區段。透過以下方式實現此點:改變總壓、改變運載氣體之質量流量、改變流過該處理室之氣體的流速以及/或者選擇用於將該蝕刻氣體輸入該處理室的進氣區及選擇該蝕刻氣體之質量流量。本發明較佳採用專利文獻DE 10 2007 009 145 A1或專利文獻DE 10 2004 009 130 A1所揭露的處理室。該處理室具有旋轉對稱結構,包含一位於旋轉中心的進氣機構及一環形包圍該處理室之排氣機構。該處理室之半徑約為30cm。該處理室之高度約為2cm至3cm。該進氣機構具有多個豎向疊置的進氣區。可利用一沿流動方向配置於該進氣機構下游的真空泵對該處理室內的總氣壓進行調節,調節範圍為1mbar以下至900mbar。該等豎向疊置之進氣區中皆設有一可單獨控制之蝕刻氣體進氣管。每個蝕刻氣體進氣管皆可將一蝕刻氣體連同一運載氣體以預選質量流量送入該處理室。亦即,該蝕刻氣體被分成一或多個氣體分流輸入該處理室,此處之氣體分流亦指穿過單獨一個所選進氣區的蝕刻氣體流量。該等氣體分流之作用存在區別,以便在該等相互銜接的蝕刻步驟中對與該進氣區間隔不同距離的表面區域進行清潔。採用MOCVD塗佈工藝時,局部之生長率主要取決於相應地點與進氣機構的徑向距離。根據專利文獻DE 10 2004 009 130 A1,緊鄰進氣區之進氣區域內的生長率朝下游隨徑向距離迅速升高,達到最大值後再徑向向外連續降低。因此,依據MOCVD工藝需要去除之最厚的附生覆蓋物位於真正意義上的生長區前且緊鄰該生長區,在該生長區內,基板放置在座體朝向上方的表面上。先前技術係在蝕刻過程中將一恆 定的蝕刻氣流送入處理室,此時,覆蓋物厚度最大之區域內會出現最大之蝕刻氣體耗盡現象,造成下游區域可能受到不充分清潔。本發明之方法可對流體動力參數進行設置,使得對相應表面區段施加不同強度的蝕刻氣體。需要對距離進氣機構最遠的下游表面區域進行蝕刻時,在最下面的進氣區中僅輸入運載氣體以便產生一擴散障壁。在該處理室內採用較高的水平氣體流速及相對較低的總壓以實施該清潔過程。該總壓較佳約為100mbar。亦可小於100mbar。流過該處理室之總氣體流量為50slm至200slm。該蝕刻氣體大致僅經由該中進氣區輸入該處理室。還可經由最上面的進氣區將少量蝕刻氣流送入該處理室。實質之處在於,此處係一經由緊鄰該座體之進氣區所輸入之不含蝕刻氣體的氣流,該氣流用作擴散障壁。若該處理室頂部於清潔該處理室的過程中亦被主動加熱,即被一自有加熱裝置加熱,則可經由緊鄰該處理室頂部之進氣區來同樣將一不含蝕刻氣體之載氣流送入該處理室,該載氣流提供了針對大致僅經由中央進氣區輸入之蝕刻氣體的擴散障壁。經由該中央進氣區所輸入的質量流量可大於經由緊鄰該等處理室壁之進氣區所輸入該處理室的氣體流量。其中,特別是為了清潔進氣區附近的表面區域,在該處理室內形成一具有準抛物線型流動剖面的氣體層流。根據本發明,亦可使得一氣體流量流過一緊鄰處理室壁之進氣區,該氣體流量等於甚至大於流過該中央進氣區之質量流量。該配置方案在對較遠的處理室壁之表面區域進行清潔時特別有利。經由近處理室壁之進氣區所輸入之加大之載氣流形成一針對僅輸入中進氣區之蝕刻氣體的擴散障壁。經由該最下面的進氣區來輸入不含蝕刻氣體之運載氣體,遂形成一朝向該處理室之下壁的擴散障壁,使得該蝕刻氣體,較佳氯氣首先到達在覆蓋物厚度最大之區域下游的 表面。採用此種流動參數後,先前技術中所發生的氯氣損耗被最小化。僅對該處理室之底部(即座體)進行加熱即可。藉由該座體之輻射加熱來被動式加熱該處理室頂部。該座體之壁溫為400至1200℃。較佳為500至1000℃。在載氣N2中採用Cl2為蝕刻氣體。若在實施該清潔方法過程中,先在塗佈工藝中透過輸入三甲基鎵與氨來沉積氮化鎵,則Cl2會與GaN發生放熱性蝕刻反應,並將氮化鎵轉化為揮發性氯化鉀。本發明之方法不僅能對徑向外部區域進行選擇性蝕刻。還能透過相應過程的參數將蝕刻效果限制於就流動方向而言緊鄰進氣機構之區域。為此,在相對較高的壓力條件下(較佳大於400mbar)將相對少量的載氣流送入該處理室。該載氣流為25slm至60slm。採用該等流體動力參數時,可在進氣區之區域內形成一朝向處理室頂部之渦流。該渦流係由升力引起且形成一沿處理室頂部的氣體回流。該渦流使得輸入該處理室之氣流進行動態向下運動。為了僅對該進氣區進行清潔,經由該中進氣區且視需要亦少量地經由該上進氣區將氯氣送入該處理室。該渦流將經由該中進氣區輸入的處理氣體壓向該座體之表面。該處理室內的氣壓值大於400mbar。亦可達到800bmar。將總壓降至500mbar以下,則渦流消散。發生層流時,質量流以大體擴散驅動的方式橫向於流動方向運動。為對緊鄰該等進氣區之上表面區域及下表面區域進行清潔,在此種層流條件下僅經由緊鄰該等處理室壁的該等進氣區輸入該蝕刻氣體。該中進氣區基本上或完全用來輸送運載氣體。清潔該處理室之中央區域時,僅經由該中進氣區將蝕刻氣體送入該處理室。亦可在較小壓力(如小於600mbar)條件下實施此點。此處同樣將流動狀態設置為形成層流。但此時之總壓明顯大於在對處理室之徑向最外區域進行清潔時的總壓。在此情況下,流速明顯小於在對處理室之徑向最 外區域進行清潔時的流速。採用上述流體動力參數後,僅在處理室之近壁區域內形成效果有限的擴散層,該擴散層唯有在該進氣區之區域內才能產生明顯效果。有鑒於此,本發明之方法藉由擴散障壁及針對性之渦流發生來對處理室進行局部選擇性清潔。其中,透過流速以及透過對供應蝕刻氣體進入處理室之進氣區進行選擇來影響該擴散障壁及該渦流的發生。特定言之透過改變總壓來影響流速。 The solution to achieve the above object of the present invention is the invention given in the scope of the patent application. The invention first proposes to carry out the cleaning method in a number of mutually interconnecting steps, wherein different surface areas of the walls of the processing chamber are cleaned in different steps. To this end, the etching gas is sequentially fed into the processing chamber via different inlet regions, so that different intensity etching gases are applied to different surface regions of the walls in sequence. The flow conditions within the processing chamber are set using the different etching steps such that the etching gas acts substantially (at least intensively) on the selected surface segments. This is achieved by changing the total pressure, varying the mass flow of the carrier gas, changing the flow rate of the gas flowing through the processing chamber, and/or selecting an inlet region for introducing the etching gas into the processing chamber and selecting the etching. Mass flow of gas. The invention is preferably a treatment chamber as disclosed in the patent document DE 10 2007 009 145 A1 or the patent document DE 10 2004 009 130 A1. The processing chamber has a rotationally symmetric structure including an air intake mechanism at a center of rotation and an exhaust mechanism annularly surrounding the processing chamber. The processing chamber has a radius of about 30 cm. The processing chamber has a height of about 2 cm to 3 cm. The intake mechanism has a plurality of vertically stacked intake regions. The total air pressure in the processing chamber can be adjusted by a vacuum pump disposed downstream of the air intake mechanism in the flow direction, and the adjustment range is from 1 mbar to 900 mbar. Each of the vertically stacked inlet regions is provided with an individually controllable etching gas inlet pipe. Each of the etching gas inlet tubes can deliver an etching gas to the processing chamber at a preselected mass flow rate through the same carrier gas. That is, the etching gas is split into one or more gas streams into the processing chamber, where the gas split also refers to the flow of etching gas through a single selected inlet region. The effects of the gas splits are differentiated in order to clean the surface areas at different distances from the gas inlet zone during the mutually interconnected etching steps. When using the MOCVD coating process, the local growth rate is mainly determined by the radial distance of the corresponding location from the intake mechanism. According to the patent document DE 10 2004 009 130 A1, the growth rate in the intake region immediately adjacent to the intake region rises rapidly downstream with the radial distance, reaches a maximum value and then decreases continuously radially outward. Therefore, the thickest epiphytic cover that needs to be removed in accordance with the MOCVD process is located in front of and immediately adjacent to the true growth zone in which the substrate is placed on the upwardly facing surface of the body. The prior art introduced a constant etch gas stream into the process chamber during the etching process. At this time, the maximum etching gas depletion occurred in the region where the thickness of the cover was the largest, and the downstream region may be insufficiently cleaned. The method of the present invention can set the fluid dynamic parameters such that different thicknesses of etching gas are applied to the respective surface sections. When etching the downstream surface area furthest from the intake mechanism, only the carrier gas is input in the lowermost intake region to create a diffusion barrier. A higher horizontal gas flow rate and a relatively lower total pressure are employed within the processing chamber to effect the cleaning process. The total pressure is preferably about 100 mbar. It can also be less than 100 mbar. The total gas flow rate through the processing chamber is from 50 slm to 200 slm. The etching gas is input to the processing chamber substantially only via the middle intake region. A small amount of etch gas stream can also be fed into the processing chamber via the uppermost inlet region. The essence is that here, a gas stream containing no etching gas, which is input through the gas inlet region of the body, is used as a diffusion barrier. If the top of the processing chamber is also actively heated during the cleaning of the processing chamber, that is, heated by a self-heating device, a carrier gas containing no etching gas may be similarly passed through the air inlet region adjacent to the top of the processing chamber. Feeding into the processing chamber, the carrier gas stream provides a diffusion barrier for the etching gas that is input only substantially via the central inlet region. The mass flow rate input through the central intake zone may be greater than the gas flow rate input to the process chamber via the intake zone adjacent the walls of the process chambers. Among them, in particular, in order to clean the surface area in the vicinity of the intake region, a gas laminar flow having a quasi-parabolic flow profile is formed in the processing chamber. In accordance with the present invention, a gas flow can also be caused to flow through an inlet region adjacent the wall of the processing chamber, the gas flow being equal to or greater than the mass flow through the central inlet region. This arrangement is particularly advantageous when cleaning the surface area of a remote processing chamber wall. The increased carrier gas flow input through the inlet region of the process chamber wall forms a diffusion barrier for the etching gas that is only input to the intermediate gas inlet region. The carrier gas containing no etching gas is input through the lowermost inlet region, and a diffusion barrier is formed toward the lower wall of the processing chamber, so that the etching gas, preferably chlorine, first reaches the region below the region where the thickness of the covering is the largest. s surface. With such flow parameters, the chlorine loss that occurred in the prior art was minimized. It is only necessary to heat the bottom of the processing chamber (ie, the seat). The top of the processing chamber is passively heated by radiant heating of the body. The wall temperature of the seat is 400 to 1200 °C. It is preferably 500 to 1000 °C. Cl 2 is used as an etching gas in the carrier gas N 2 . If during the implementation of the cleaning method, gallium nitride is deposited by inputting trimethylgallium and ammonia in the coating process, Cl 2 undergoes an exothermic etching reaction with GaN and converts gallium nitride into volatile Potassium chloride. The method of the present invention not only selectively etches radially outer regions. It is also possible to limit the etching effect to the area immediately adjacent to the air intake mechanism in terms of the flow direction by the parameters of the corresponding process. To this end, a relatively small amount of carrier gas stream is fed to the processing chamber under relatively high pressure conditions (preferably greater than 400 mbar). The carrier gas flow is from 25 slm to 60 slm. With these hydrodynamic parameters, a vortex can be formed in the region of the inlet region towards the top of the processing chamber. The eddy current is caused by lift and forms a backflow of gas along the top of the processing chamber. This vortex causes the airflow entering the processing chamber to move dynamically downward. In order to clean only the intake zone, chlorine gas is fed into the process chamber via the upper intake zone and, if necessary, via the upper intake zone. The eddy current presses the process gas input through the middle intake region toward the surface of the seat. The pressure in the chamber is greater than 400 mbar. Can also reach 800bmar. When the total pressure is reduced to below 500 mbar, the eddy current dissipates. When laminar flow occurs, the mass flow moves transversely to the flow direction in a generally diffusely driven manner. In order to clean the surface area and the lower surface area immediately adjacent to the air intake areas, the etching gas is input only through the air inlet areas adjacent to the processing chamber walls under such laminar flow conditions. The medium intake region is used substantially or completely to carry the carrier gas. When the central region of the processing chamber is cleaned, etching gas is supplied to the processing chamber only via the intermediate gas inlet region. This can also be done at lower pressures (eg less than 600 mbar). The flow state is also set here to form a laminar flow. However, the total pressure at this time is significantly greater than the total pressure when cleaning the radially outermost region of the processing chamber. In this case, the flow rate is significantly less than the flow rate when cleaning the radially outermost region of the process chamber. With the above-mentioned hydrodynamic parameters, a diffusion layer having a limited effect is formed only in the near wall region of the processing chamber, and the diffusion layer can produce a significant effect only in the region of the inlet region. In view of this, the method of the present invention locally cleans the process chamber by diffusion barriers and targeted eddy currents. Wherein, the diffusion barrier and the occurrence of the eddy current are affected by the flow rate and by the selection of the inlet region for supplying the etching gas into the processing chamber. In particular, the flow rate is affected by changing the total pressure.
1‧‧‧進氣區 1‧‧‧Intake zone
2‧‧‧進氣區 2‧‧‧Intake zone
3‧‧‧進氣區 3‧‧‧Intake zone
4‧‧‧座體 4‧‧‧ body
4'‧‧‧壁/處理室底部 4'‧‧‧Bottom of wall/treatment room
5‧‧‧壁/處理室頂部 5‧‧‧Wall/Processing Room Top
6‧‧‧處理室 6‧‧‧Processing room
7‧‧‧旋轉式基板座(鄰接進氣區) 7‧‧‧Rotary base plate (adjacent to the intake area)
8‧‧‧旋轉式基板座(鄰接進氣區) 8‧‧‧Rotary base plate (adjacent to the intake area)
9‧‧‧加熱裝置 9‧‧‧ heating device
10‧‧‧加熱裝置 10‧‧‧ heating device
Q1‧‧‧蝕刻氣體分流 Q1‧‧‧etching gas shunt
Q2‧‧‧蝕刻氣體分流 Q2‧‧‧etching gas shunt
Q3‧‧‧蝕刻氣體分流 Q3‧‧‧etching gas shunt
圖1為圖2中的線條I-I所示之處理室的橫截面圖,圖2為座體之俯視圖,該座體具有多個圍繞其中心環形配置的基板座(7、8),圖3為一蝕刻步驟的示意圖,該步驟係選擇相應流體動力參數,以便僅對處理室之徑向最外區域進行清潔,圖4為與圖3相應之示意圖,係選擇相應流體動力過程參數,以便大致僅對座體之進氣區進行清潔,圖5為與圖3相應之示意圖,係選擇相應流體動力參數,以便既對座體又對處理室頂部之進氣區域進行清潔,以及圖6為與圖3相應之示意圖,係設置相應流體動力過程參數,以便僅對處理室之中央區域進行清潔。 1 is a cross-sectional view of the processing chamber shown by line II in FIG. 2, and FIG. 2 is a plan view of the housing having a plurality of substrate holders (7, 8) disposed annularly around the center thereof, and FIG. 3 is A schematic diagram of an etching step that selects a corresponding hydrodynamic parameter to clean only the radially outermost region of the processing chamber. FIG. 4 is a schematic view corresponding to FIG. 3, selecting corresponding hydrodynamic process parameters so that substantially only The cleaning of the air intake area of the seat body, FIG. 5 is a schematic diagram corresponding to FIG. 3, and the corresponding fluid dynamic parameters are selected to clean both the seat body and the air intake area at the top of the processing chamber, and FIG. 6 and FIG. 3 Corresponding diagrams, the corresponding hydrodynamic process parameters are set so that only the central area of the processing chamber is cleaned.
下面結合附圖並對本發明之實施例進行說明。 Embodiments of the present invention will be described below with reference to the accompanying drawings.
對外氣密式封閉的反應器殼體內設有處理室6。該處理室具有處理室底部4',其由座體4之朝向處理室6的表面構成。座體4大體呈圓盤狀,具有圍繞中心環形配置的基板座7、8,該等基板座係 塗佈過程中受到旋轉驅動的圓形盤。座體4下方設有加熱裝置9,用於將座體4加熱至塗佈溫度或清潔溫度。該座體之直徑約為60cm。處理室高度,即處理室底部4'與處理室頂部5的距離為2cm至3cm。 A processing chamber 6 is provided in the outer gas-tight closed reactor housing. The processing chamber has a processing chamber bottom 4' which is formed by the surface of the housing 4 facing the processing chamber 6. The base 4 is substantially disk-shaped and has substrate seats 7, 8 disposed around the center ring, and the substrate bases A circular disk that is rotationally driven during coating. Below the seat 4 is provided a heating device 9 for heating the seat 4 to a coating temperature or a cleaning temperature. The seat has a diameter of about 60 cm. The height of the process chamber, i.e., the distance between the bottom 4' of the process chamber and the top 5 of the process chamber, is 2 cm to 3 cm.
處理室頂部5上方可設有另一用於加熱處理室頂部5的加熱器10。該加熱裝置10係可選裝置且對MOCVD過程而言通常非必要之舉。在MOCVD過程中藉由加熱後之座體4的輻射來被動式加熱處理室頂部5。 Another heater 10 for heating the top 5 of the processing chamber may be provided above the top 5 of the processing chamber. The heating device 10 is an optional device and is generally not necessary for the MOCVD process. The chamber top 5 is passively heated by the radiation of the heated body 4 during the MOCVD process.
圖1表示三個豎向疊置的進氣區1、2、3,其中,每個進氣區分別透過一單獨分配給它的進氣管連接一蝕刻氣體源。該單獨進氣管具有閥及質量流量控制器,以便將單獨一蝕刻氣體分流Q1、Q2、Q3送入每個進氣區1、2、3。在未繪示實施例中設有三個以上上下疊置的進氣區。該等進氣區亦可具有不同高度,例如,中進氣區2的高度可大於兩個外部進氣區1、3。 Figure 1 shows three vertically stacked inlet zones 1, 2, 3, wherein each inlet zone is connected to an etch gas source via a separately assigned intake pipe. The separate intake manifold has a valve and mass flow controller to deliver a single etch gas split Q1, Q2, Q3 to each of the intake zones 1, 2, 3. In the embodiment not shown, three or more air intake regions stacked one above another are provided. The intake zones may also have different heights, for example, the height of the middle intake zone 2 may be greater than the two outer intake zones 1, 3.
實施如專利文獻DE 10 2004 009 130 A1或專利文獻DE 10 2011 054 566 A1所述之塗佈過程時,將氫氣連同NH3或者連同TMGa一起送入處理室。以某種方式輸送處理氣體,使得生長區前的最近區域具有最大生長率,且生長率徑向向外儘可能線性下降。塗佈過程中,除基板外亦在座體4之未被基板遮蓋的表面區段或者處理室頂部5出現覆蓋現象。在塗佈步驟完畢並將基板自處理室6取出後對該處理室進行清潔。透過將Cl2送入該處理室實現此點。本實施例中,Cl2係連同N2或氬氣一同輸入處理室。 When carrying out the coating process as described in the patent document DE 10 2004 009 130 A1 or the patent document DE 10 2011 054 566 A1, hydrogen is fed into the treatment chamber together with NH 3 or together with TMGa. The process gas is delivered in a manner such that the closest region in front of the growth zone has a maximum growth rate and the growth rate decreases linearly outward as much as possible. During the coating process, in addition to the substrate, a covering phenomenon occurs in the surface portion of the base 4 which is not covered by the substrate or the top 5 of the processing chamber. The processing chamber is cleaned after the coating step is completed and the substrate is removed from the processing chamber 6. This is achieved by feeding Cl 2 into the processing chamber. In this embodiment, the Cl 2 system is fed into the processing chamber along with N 2 or argon.
該清潔過程分多個步驟進行,其中,每個步驟僅對處理室底部4'或處理室頂部5的一選定表面區域進行清潔。較佳選擇相應蝕刻步驟,使得先後對該處理室的不同徑向區段進行清潔。舉例而言, 第一蝕刻步驟僅用來清潔進氣區,第二蝕刻步驟係清潔中央區,第三蝕刻步驟則對最遠的下游區進行清潔。各清潔步驟之區別在於,在不同的壓力及總氣體流量情況下,經由不同進氣區1、2、3將不同的蝕刻氣體部分氣體組合並送入處理室。因此,該等蝕刻步驟在流過處理室的流速方面亦存在區別。此處可指一具有某種豎向剖面的層流,使得該蝕刻氣體必須克服一橫向於流動方向之擴散障壁。亦可針對性地在處理室內形成渦流。 The cleaning process is carried out in a number of steps, wherein each step only cleans a selected surface area of the processing chamber bottom 4' or the processing chamber top 5. Preferably, the respective etching step is selected such that the different radial sections of the processing chamber are successively cleaned. For example, The first etching step is only used to clean the inlet zone, the second etching step is to clean the central zone, and the third etching step is to clean the farthest downstream zone. The cleaning steps differ in that different etching gas partial gases are combined and fed into the processing chamber via different inlet zones 1, 2, 3 at different pressures and total gas flows. Therefore, the etching steps also differ in the flow rate through the processing chamber. This may refer to a laminar flow having a certain vertical profile such that the etching gas must overcome a diffusion barrier transverse to the flow direction. It is also possible to form eddy currents in the treatment chamber in a targeted manner.
圖3係設置相應過程參數,以便有選擇地對處理室頂部及處理室底部之徑向外部的區域進行清潔。需要受到強化清潔的選擇性表面區段在圖3至6中用點劃線表示。清潔外部區域(圖3)時,選擇相應流體動力參數,使得至少在座體4上方形成擴散障壁。利用相對較高的流速工作以防止渦流發生。在相對較低的總壓條件下實施該蝕刻過程。該總壓約為100mbar。為產生足夠高的擴散障壁,經由下進氣區1送入20slm至50slm的氮氣流。經由中進氣區2同樣送入20slm至50slm的載氣流。經由最上面的進氣區送入10slm至50slm的載氣流。Cl2基本僅經由中進氣區輸入且輸入量為0.5slm至5slm(或更少)。上進氣區中的氯氣分壓亦可低於該輸入量。作為可選方案,可經由上進氣區將小於0.5slm的較小Cl2流送入處理室。自該氣相之中區域朝該等壁形成一擴散控制之氯氣質量流量,因為因為沒有任何蝕刻氣體經由下進氣區1輸入該處理室。 Figure 3 sets the respective process parameters to selectively clean the area of the top of the process chamber and the radially outer portion of the bottom of the process chamber. Selective surface sections that require enhanced cleaning are indicated by dashed lines in Figures 3-6. When cleaning the outer region (Fig. 3), the corresponding hydrodynamic parameters are selected such that at least a diffusion barrier is formed over the seat 4. Work with a relatively high flow rate to prevent eddy currents from occurring. The etching process is carried out under relatively low total pressure conditions. This total pressure is approximately 100 mbar. In order to generate a sufficiently high diffusion barrier, a nitrogen flow of 20 slm to 50 slm is fed through the lower intake zone 1. A carrier gas flow of 20 slm to 50 slm is also fed via the middle intake zone 2. A carrier gas flow of 10 slm to 50 slm is fed through the uppermost intake region. Cl 2 is input substantially only via the middle intake region and the input amount is 0.5 slm to 5 slm (or less). The partial pressure of chlorine in the upper gas inlet zone may also be lower than the input amount. As an alternative, a smaller stream of Cl 2 of less than 0.5 slm can be fed into the processing chamber via the upper inlet zone. A diffusion-controlled chlorine mass flow rate is formed from the region of the gas phase toward the walls because no etching gas is introduced into the processing chamber via the lower inlet region 1.
圖4係設置相應過程參數,以便僅對緊鄰進氣區的處理室底部4'進行清潔。以一較高壓力實施清潔過程,該壓力可大於400mbar,例如為600mbar。流速設置得較低,以便在距離進氣區最近的下游位置形成一受升力推動的渦流。該氣體渦流以該氣流之中央區域 為出發點朝頂部流動,並於頂部產生造成輕微的氣體回流。該渦流在排出該中進氣區的氣體中產生一朝向下方之流動分量。採用上述過程參數時,僅經由中進氣區、視需要亦經由上進氣區輸入Cl2。產生渦流的用處在於,在距離進氣區最近的下游位置將Cl2壓向處理室底部之表面。因此,毋需經由下進氣區1將Cl2輸入處理室。經由上進氣區及下進氣區1、3之總氣體流量在此為5slm至15slm。經由中進氣區2將15slm至25slm的氮氣送入處理室。經由中進氣區2將0.5slm至3slm的氯氣送入處理室。此處之氯氣流量亦可採用更小的值。 Figure 4 sets the corresponding process parameters to clean only the bottom 4' of the process chamber immediately adjacent to the inlet zone. The cleaning process is carried out at a higher pressure, which may be greater than 400 mbar, for example 600 mbar. The flow rate is set lower to create a lift-driven vortex at a location downstream of the intake region. The gas vortex flows toward the top with the central region of the gas stream as a starting point, and causes a slight gas backflow at the top. The vortex produces a downwardly directed flow component in the gas exiting the intermediate intake region. When the above process parameters are used, Cl 2 is also input via the upper intake region and, if necessary, via the upper intake region. The purpose of generating eddy currents is to press Cl 2 against the surface of the bottom of the processing chamber at a position downstream of the intake region. Therefore, it is not necessary to input Cl 2 into the processing chamber via the lower intake region 1. The total gas flow rate through the upper and lower intake zones 1, 3 is here 5slm to 15slm. 15 slm to 25 slm of nitrogen is fed into the processing chamber via the medium inlet zone 2. Chlorine gas of 0.5 slm to 3 slm is fed into the processing chamber via the medium intake zone 2. The chlorine gas flow here can also be a smaller value.
選擇略低的處理室壓力,以便在進氣區域內既對處理室上壁又對處理室下壁進行清潔。該處理室壓力應當小於500mbar。例如可為200mbar或者300mbar。在上進氣區域和下進氣區域中設置5slm至15slm的載氣流量。可經由中進氣區2將15slm至25slm的氮氣送入處理室。此處之氯氣流同樣為0.5slm至3slm(或更少)。其中,以不產生明顯渦流的方式選擇相應流動參數。採用上述過程參數時,氯氣大體而言僅在緊鄰進氣區的處理室區域內被消耗掉。此時,蝕刻氣體僅經由該二近壁之進氣區1、3輸入處理室,而非經由中央進氣區2。 A slightly lower process chamber pressure is selected to clean both the upper chamber of the process chamber and the lower wall of the process chamber in the intake region. The process chamber pressure should be less than 500 mbar. For example it can be 200 mbar or 300 mbar. A carrier gas flow rate of 5 slm to 15 slm is set in the upper intake region and the lower intake region. Nitrogen gas of 15 slm to 25 slm can be fed into the processing chamber via the medium inlet zone 2. The chlorine gas flow here is also from 0.5 slm to 3 slm (or less). Among them, the corresponding flow parameters are selected in such a manner that no significant eddy current is generated. With the above process parameters, the chlorine gas is generally consumed only in the area of the process chamber immediately adjacent to the inlet zone. At this time, the etching gas is input to the processing chamber only via the two near-wall inlet regions 1, 3 instead of via the central inlet region 2.
圖6係設置相應流體動力參數,以便對處理室之中央區段進行清潔。此處亦透過一擴散層來達到使得氯氣大致上首先處於中央區域、即延遲到達待清潔之表面4'、5的效果。此處之壓力同樣低於圖3所示之型態。該壓力低於600mbar,例如可介於300mbar與400mbar之間。選擇可防止渦流發生的流速。使用上進氣區3及下進氣區1中之10slm至25slm的載氣流量。在該中進氣區中輸入20slm至50slm的氮氣。其中,僅在中進氣區中輸入反應性氣體,如Cl2。Cl2流量 為0.5slm至5slm(或更少)。 Figure 6 sets the corresponding fluid dynamic parameters to clean the central section of the process chamber. Here too, a diffusion layer is used to achieve the effect that the chlorine gas is substantially in the central region first, that is, delayed to reach the surfaces 4', 5 to be cleaned. The pressure here is also lower than the type shown in Figure 3. The pressure is below 600 mbar, for example between 300 mbar and 400 mbar. Choose a flow rate that prevents eddy currents from occurring. A carrier gas flow rate of 10 slm to 25 slm in the upper intake zone 3 and the lower intake zone 1 is used. A nitrogen gas of 20 slm to 50 slm is input in the middle intake region. Among them, a reactive gas such as Cl 2 is input only in the middle intake region. The Cl 2 flow rate is from 0.5 slm to 5 slm (or less).
可以任意順序先後執行前述清潔步驟。亦可添加更多並非僅對三個區,而是對更多沿流動方向先後配置之區進行選擇性清潔的清潔步驟。舉例而言,可在第一蝕刻步驟中對就流動方向而言距離進氣區最遠的區域進行清潔,再透過選擇相應流動參數來逐步接近緊鄰進氣區之區域。然而,較佳沿流動方向逐步清潔該處理室,即首先清潔緊鄰進氣區之區域,再逐步清潔該處理室之更遠的區域。採用該方法時,第一蝕刻步驟係對位於第一旋轉式基板座7前的進氣區以及局部地對旋轉式基板座8之區域進行蝕刻。隨後之第二處理步驟係清潔該旋轉式基板座7之其他鄰接該進氣區的區域。該處理步驟亦局部地對鄰接該進氣區之旋轉式基板座8所在的區域進行清潔。最後對徑向最外區域(即鄰接該進氣區之旋轉式基板座8所在的區域)進行清潔。此處僅以氯氣為例對蝕刻氣體進行說明。亦可使用另一鹵素、另一鹵化合物(如HCl)或者使用H2或其他任意適用的反應性氣體來替代Cl2。為防止僅經由中進氣區輸入的蝕刻氣體在最外區域前就發揮清潔效果並被消耗掉,透過增大經由該近壁進氣區之載氣流量來產生一擴散障壁。經由該近壁進氣區所輸入之載氣流可與經由中進氣區輸入處理室之用於輸送蝕刻氣體的載氣流相應。遂可形成一與準抛物線型流動剖面有所區別的流動剖面,其中,近壁區域內的流速大於抛物線型流動剖面中的流速。 The aforementioned cleaning steps can be performed sequentially in any order. It is also possible to add more than just three zones, but to a cleaning step that selectively cleans more zones along the flow direction. For example, the region furthest from the intake region in terms of the flow direction may be cleaned in the first etching step, and the region immediately adjacent to the intake region may be gradually approached by selecting the corresponding flow parameter. Preferably, however, the process chamber is progressively cleaned in the direction of flow, i.e., the area immediately adjacent to the inlet zone is first cleaned and the further zone of the process chamber is gradually cleaned. In this method, the first etching step etches the gas inlet region in front of the first rotary substrate holder 7 and the region of the rotary substrate holder 8 locally. A subsequent second processing step cleans the other regions of the rotating substrate holder 7 that abut the inlet region. This processing step also locally cleans the area where the rotary substrate holder 8 adjacent to the intake region is located. Finally, the radially outermost region (i.e., the region of the rotating substrate holder 8 adjacent to the inlet region) is cleaned. Here, the etching gas will be described by taking chlorine gas as an example. Instead of Cl 2 it is also possible to use another halogen, another halogen compound such as HCl or H 2 or any other suitable reactive gas. In order to prevent the etching gas input only through the middle air intake region from being cleaned and consumed before the outermost region, a diffusion barrier is generated by increasing the carrier gas flow rate through the near-wall air intake region. The carrier gas flow input through the near-wall air intake region may correspond to a carrier gas flow for feeding the etching gas through the middle intake region input processing chamber. The crucible may form a flow profile that differs from the quasi-parabolic flow profile, wherein the flow velocity in the near wall region is greater than the flow velocity in the parabolic flow profile.
所有已揭示特徵(自身即)為發明本質所在。故本申請之揭示內容亦包含相關/所附優先權檔案(在先申請副本)所揭示之全部內容,該等檔案所述特徵亦一併納入本案申請之申請專利範圍。附屬項採用可選並列措辭對本發明針對先前技術之改良方案的特徵予以說 明,其目的主要在於在該等請求項基礎上進行分案申請。 All the revealed features (ie, themselves) are the essence of the invention. Therefore, the disclosure of the present application also contains all the contents disclosed in the related/attached priority file (copy of the prior application), and the features described in the files are also included in the scope of the patent application of the present application. The subsidiary item uses optional side-by-side wording to describe the features of the prior art improvement of the prior art. Ming, its purpose is mainly to apply for division on the basis of these claims.
1‧‧‧進氣區 1‧‧‧Intake zone
2‧‧‧進氣區 2‧‧‧Intake zone
3‧‧‧進氣區 3‧‧‧Intake zone
4‧‧‧座體 4‧‧‧ body
4'‧‧‧壁/處理室底部 4'‧‧‧Bottom of wall/treatment room
5‧‧‧壁/處理室頂部 5‧‧‧Wall/Processing Room Top
6‧‧‧處理室 6‧‧‧Processing room
7‧‧‧旋轉式基板座(鄰接進氣區) 7‧‧‧Rotary base plate (adjacent to the intake area)
8‧‧‧旋轉式基板座(鄰接進氣區) 8‧‧‧Rotary base plate (adjacent to the intake area)
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