TW201346935A - Electrode substrate, input device and display device comprising same, and preparation method thereof - Google Patents

Electrode substrate, input device and display device comprising same, and preparation method thereof Download PDF

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TW201346935A
TW201346935A TW102108253A TW102108253A TW201346935A TW 201346935 A TW201346935 A TW 201346935A TW 102108253 A TW102108253 A TW 102108253A TW 102108253 A TW102108253 A TW 102108253A TW 201346935 A TW201346935 A TW 201346935A
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conductive
conductive pattern
conductivity
pattern
layer
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TW102108253A
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TWI550644B (en
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In-Sook Ahn
Ki-Sub Choi
Duk-Ki Kim
Jin-Hwan Kim
Dae-Gi Ryu
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Skc Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H01B1/124Intrinsically conductive polymers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/032Materials
    • H05K2201/0329Intrinsically conductive polymer [ICP]; Semiconductive polymer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067Etchants

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Human Computer Interaction (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

Disclosed herein are an electrode substrate, an input device and display device comprising same, and a preparation method thereof. The electrode substrate comprises: an insulating substrate; and an electrode layer disposed on the insulating substrate, wherein the electrode layer comprises a conductive pattern containing a conductive polymer, and a non-conductive pattern, and the conductive pattern and the non-conductive pattern are integrally disposed in the same layer.

Description

電極基板,含有該電極基板之輸入裝置與顯示裝置及其等之製造方法 Electrode substrate, input device and display device including the same, and manufacturing method thereof 發明領域 Field of invention

本發明係有關於一種電極基板,含有該電極基板之輸入裝置與顯示裝置及其等之製造方法。 The present invention relates to an electrode substrate, an input device and a display device including the electrode substrate, and a method of manufacturing the same.

發明背景 Background of the invention

目前,聚苯胺(PAN)、聚吡咯(PPy);聚噻吩(PT)等被廣泛地作為導電聚合物使用。它們被輕易地聚合,且具有極佳之導電性,以及熱與氧化安定性。 Currently, polyaniline (PAN), polypyrrole (PPy), polythiophene (PT), and the like are widely used as conductive polymers. They are easily polymerized and have excellent electrical conductivity, as well as thermal and oxidative stability.

由於該等導電聚合物之電特性,它們已被建議用於包括二次電池用電極、用以屏蔽電磁波之材料、撓性電極、防靜電材料、耐腐蝕塗布材料等各種應用。但是由於它們的問題,例如不良加工性、熱及大氣不安定性、環境耐受性、成本等,它們尚未被大量商品化。 Due to the electrical characteristics of the conductive polymers, they have been proposed for various applications including electrodes for secondary batteries, materials for shielding electromagnetic waves, flexible electrodes, antistatic materials, corrosion-resistant coating materials, and the like. However, due to their problems, such as poor processability, heat and atmospheric instability, environmental tolerance, cost, etc., they have not been commercialized in large quantities.

但是,最近,當防塵及防靜電塗布材料快速地越來越獲得重視,作為用以屏蔽電磁波之標準變得越來越嚴格,因此導電聚合物作為用以屏蔽由各種電子器具發射之 電磁波已引起相當多之注意。 However, recently, as dustproof and antistatic coating materials have become more and more popular, the standards for shielding electromagnetic waves have become more and more strict, and thus conductive polymers are used as shielding for emission by various electronic appliances. Electromagnetic waves have caused considerable attention.

特別地因為在被揭露在美國專利第5,035,926及5,391,472號中後,一以噻吩為主之導電聚合物之聚乙烯二氧噻吩(PEDT)是習知的,故導電聚合物作為用以塗布一布勞恩管之玻璃表面之材料已獲得相當多之注意。與以聚苯胺及以聚吡咯為主之聚合物以及其他以聚噻吩為主之導電聚合物比較,該等導電聚合物具有極佳之透明性。 In particular, polyethylene dioxythiophene (PEDT), a conductive polymer based on thiophene, is known in the art, as disclosed in U.S. Patent Nos. 5,035,926 and 5,391,472. The material of the glass surface of the Lawn tube has received considerable attention. These conductive polymers have excellent transparency compared to polyaniline and polypyrrole-based polymers and other polythiophene-based conductive polymers.

該以聚噻吩為主之導電聚合物通常可為聚乙烯二氧噻吩,且特別是以聚苯乙烯磺酸酯摻雜之聚乙烯二氧噻吩。該水可分散性聚乙烯二氧噻吩之一典型例子係可由Heraeus公司購得之商品Clevios P。但是,即使使用一由該導電聚合物構成之聚合物薄膜時,亦需要可準確地圖案化且其圖案不容易被看見之導電聚合物薄膜。 The polythiophene-based conductive polymer may generally be polyethylene dioxythiophene, and particularly polystyrene sulfonate doped polyethylene dioxythiophene. A typical example of such a water-dispersible polyethylene dioxythiophene is the product Clevios P available from Heraeus. However, even when a polymer film composed of the conductive polymer is used, a conductive polymer film which can be accurately patterned and whose pattern is not easily seen is required.

因此,本發明人已發現含有以氯為主之化合物之一氧化劑對一導電聚合物薄膜之氧化能力極佳且,當藉由微影法使用該含氯化合物氧化劑使一導電聚合物薄膜圖案化時,該導電聚合物薄膜之圖案之不可見性增加。 Therefore, the present inventors have found that an oxidizing agent containing a chlorine-based compound has excellent oxidizing ability to a conductive polymer film, and when a conductive polymer film is patterned by lithography using the chlorine-containing compound oxidizing agent At the time, the invisibility of the pattern of the conductive polymer film is increased.

發明概要 Summary of invention

因此,本發明之一目的在於提供一種具有極佳圖案不可見性且可輕易地製造之電極基板。此外,本發明之另一目的在於提供一種含有該電極基板之輸入裝置與顯示裝置及該電極基板之製造方法。 Accordingly, it is an object of the present invention to provide an electrode substrate which is excellent in pattern invisibility and which can be easily manufactured. Further, another object of the present invention is to provide an input device and a display device including the electrode substrate, and a method of manufacturing the electrode substrate.

依據本發明之一態樣,提供一種電極基板,其包 含:一絕緣基板;及一電極層,係設置在該絕緣基板上,其中該電極層包含含有一導電聚合物之一導電圖案,及一非導電圖案,且該導電圖案及該非導電圖案係一體地設置在相同層中。 According to an aspect of the present invention, an electrode substrate is provided, which comprises And comprising: an insulating substrate; and an electrode layer disposed on the insulating substrate, wherein the electrode layer comprises a conductive pattern containing a conductive polymer, and a non-conductive pattern, and the conductive pattern and the non-conductive pattern are integrated The ground is set in the same layer.

依據本發明之另一態樣,提供一種含有該電極基板之輸入裝置。 According to another aspect of the present invention, an input device including the electrode substrate is provided.

依據本發明之再一態樣,提供一種含有該電極基板之顯示裝置。 According to still another aspect of the present invention, a display device including the electrode substrate is provided.

依據本發明之又一態樣,提供一種用以製造一電極基板之方法,包含以下步驟:(a)在一絕緣基板上施加一導電聚合物;及(b)藉由減少該施加之導電聚合物之一部份之導電性,在該絕緣基板上形成一電極層,其中該電極層包含一含有該導電聚合物之導電圖案,及一含有該導電性減少之聚合物之非導電圖案。 According to still another aspect of the present invention, a method for fabricating an electrode substrate comprising the steps of: (a) applying a conductive polymer on an insulating substrate; and (b) reducing conductive polymerization by the application The electrical conductivity of a portion of the material forms an electrode layer on the insulating substrate, wherein the electrode layer comprises a conductive pattern containing the conductive polymer, and a non-conductive pattern containing the polymer having reduced conductivity.

依據本發明之另一態樣,提供一種導電性減少劑,其包含一以氯為主之化合物及一溶劑,其中該以氯為主之化合物使用一0.5至50wt%之量。 According to another aspect of the present invention, there is provided a conductivity reducing agent comprising a chlorine-based compound and a solvent, wherein the chlorine-based compound is used in an amount of from 0.5 to 50% by weight.

依據本發明之電極基板,該非導電圖案可藉由減少該電極層之一部份之導電性形成。因此,一凸塊很少形成在該導電圖案與該非導電圖案之間,且在該導電圖案與該非導電圖案之間幾乎不產生一光學差異。因此,本發明之電極基板具有極佳圖案不可見性及光學均一性。因此,該輸入裝置及該顯示裝置可具有較佳影像品質且可減少一 影像之失真。 According to the electrode substrate of the present invention, the non-conductive pattern can be formed by reducing the conductivity of a portion of the electrode layer. Therefore, a bump is rarely formed between the conductive pattern and the non-conductive pattern, and an optical difference is hardly generated between the conductive pattern and the non-conductive pattern. Therefore, the electrode substrate of the present invention has excellent pattern invisibility and optical uniformity. Therefore, the input device and the display device can have better image quality and can be reduced by one. Distortion of the image.

11‧‧‧上基板 11‧‧‧Upper substrate

12‧‧‧下基板 12‧‧‧ Lower substrate

100‧‧‧絕緣基板 100‧‧‧Insert substrate

101‧‧‧第一絕緣基板 101‧‧‧First insulating substrate

102‧‧‧第二絕緣基板 102‧‧‧Second insulating substrate

103‧‧‧前基板 103‧‧‧ front substrate

200‧‧‧電極層 200‧‧‧electrode layer

201‧‧‧導電層 201‧‧‧ Conductive layer

202‧‧‧第一電極層 202‧‧‧First electrode layer

203‧‧‧第二電極層 203‧‧‧Second electrode layer

204‧‧‧第三電極層 204‧‧‧ third electrode layer

205‧‧‧第四電極層 205‧‧‧fourth electrode layer

210‧‧‧導電圖案 210‧‧‧ conductive pattern

220‧‧‧非導電圖案 220‧‧‧ non-conductive pattern

300‧‧‧遮罩圖案 300‧‧‧ mask pattern

400‧‧‧發光層 400‧‧‧Lighting layer

500‧‧‧導電性減少劑 500‧‧‧Conductivity reducing agent

圖1至4是顯示在依據本發明之一實施例之階段式程序中製造一電極基板之橫截面圖。 1 to 4 are cross-sectional views showing the fabrication of an electrode substrate in a staged program according to an embodiment of the present invention.

圖5是顯示依據本發明之一實施例之一觸控面板型輸入裝置之橫截面圖。 Figure 5 is a cross-sectional view showing a touch panel type input device in accordance with an embodiment of the present invention.

圖6是顯示依據本發明之一實施例之一顯示裝置之橫截面圖。 Figure 6 is a cross-sectional view showing a display device in accordance with an embodiment of the present invention.

較佳實施例之詳細說明 Detailed description of the preferred embodiment

在實施例之說明中,當說明一基板、一圖案、一電極、一層等分別形成在另一基板、另一圖案、另一電極、另一層等“上”或“下”時,它們可各“直接地”形成在其對應組件“上”或“下”,或可藉在其間設置另一組件而“間接地”形成在其對應組件“上”或“下”。此外,各組件之上/下或上部/下部係依據附圖說明。在圖中,各組件之尺寸可誇大以便於說明,且可與其等之真正尺寸不同。 In the description of the embodiments, when a substrate, a pattern, an electrode, a layer, and the like are respectively formed "on" or "down" on another substrate, another pattern, another electrode, another layer, etc., they may each be "Directly" is formed "on" or "under" the corresponding component, or may be "indirectly" formed "on" or "under" the corresponding component. In addition, the upper/lower or upper/lower components of each component are described in accordance with the drawings. In the figures, the dimensions of the various components may be exaggerated for the purpose of illustration and may be different from the actual dimensions.

電極基板及其製造方法 Electrode substrate and method of manufacturing same

圖1至4係顯示在依據本發明之一實施例之階段式程序中製造一電極基板之一流程之橫截面圖。 1 to 4 are cross-sectional views showing a flow of manufacturing an electrode substrate in a staged program according to an embodiment of the present invention.

首先,將一導電聚合物施加在一絕緣基板上。 First, a conductive polymer is applied on an insulating substrate.

請參閱圖1,以一導電聚合物塗布一絕緣基板100以形成一導電層201。 Referring to FIG. 1, an insulating substrate 100 is coated with a conductive polymer to form a conductive layer 201.

該絕緣基板100係一絕緣體。該絕緣基板100可以 是透明的。該絕緣基板100可以是撓性的。相反地,該絕緣基板100可以是剛性的。 The insulating substrate 100 is an insulator. The insulating substrate 100 can It is transparent. The insulating substrate 100 may be flexible. Conversely, the insulating substrate 100 may be rigid.

該絕緣基板100可包含一聚合物薄膜。更詳而言之,該絕緣基板100可包含一聚對苯二甲酸乙二酯薄膜,一聚乙烯薄膜,一聚2,6萘二甲酸乙二酯等。 The insulating substrate 100 may include a polymer film. More specifically, the insulating substrate 100 may comprise a polyethylene terephthalate film, a polyethylene film, a polyethylene-2,6-naphthalate or the like.

此外,該絕緣基板100可以是由一透明材料,例如,選自於由玻璃、鑄造聚丙烯(CPP)、聚碳酸酯及丙烯酸樹脂構成之群組之任一材料製成之基板。 Further, the insulating substrate 100 may be a substrate made of a transparent material such as any one selected from the group consisting of glass, cast polypropylene (CPP), polycarbonate, and acrylic resin.

該導電聚合物是一具有導電性之聚合物。詳而言之,該導電聚合物之例子可包括以聚噻吩為主之導電聚合物,以聚苯胺為主之導電聚合物,以聚吡咯為主之導電聚合物等。較佳地,該導電聚合物可以是一以聚噻吩為主之導電聚合物。 The conductive polymer is a polymer having electrical conductivity. In detail, examples of the conductive polymer may include a conductive polymer mainly composed of polythiophene, a conductive polymer mainly composed of polyaniline, a conductive polymer mainly composed of polypyrrole, and the like. Preferably, the conductive polymer may be a conductive polymer mainly composed of polythiophene.

該導電聚合物可與一溶劑混合以形成一導電聚合物溶液,且可斝加得到之導電聚合物溶液在該絕緣基板100上。接著,移除該溶劑,且因此在該絕緣基板100上形成該導電層201。 The conductive polymer may be mixed with a solvent to form a conductive polymer solution, and the obtained conductive polymer solution may be added to the insulating substrate 100. Next, the solvent is removed, and thus the conductive layer 201 is formed on the insulating substrate 100.

在該導電聚合物溶液中含有之溶劑可包含以醇為主之有機溶劑及/或一以醯胺為主之溶劑。該導電聚合物溶液可更包含一黏結劑。該黏結劑之例子可包括聚酯樹脂,聚胺基甲酸酯樹脂,聚丙烯酸樹脂,烷氧矽烷,及其等之混合物。 The solvent contained in the conductive polymer solution may include an organic solvent mainly composed of an alcohol and/or a solvent mainly composed of decylamine. The conductive polymer solution may further comprise a binder. Examples of the binder may include a polyester resin, a polyurethane resin, a polyacrylic resin, an alkoxysilane, and the like.

該以醇為主之有機溶劑可選自於由甲醇、乙醇、丙醇、異丙醇、丁醇及其等之混合物構成之群組。該以醯 胺為主之溶劑可選自於由甲醯胺、N-甲基甲醯胺、N,N-二甲基甲醯胺、乙醯胺、N-甲基乙醯胺、N-甲基吡咯烷酮及其等之混合物構成之群組。 The alcohol-based organic solvent may be selected from the group consisting of methanol, ethanol, propanol, isopropanol, butanol, and the like. The 醯 The amine-based solvent may be selected from the group consisting of formamide, N-methylformamide, N,N-dimethylformamide, acetamide, N-methylacetamide, N-methylpyrrolidone. And a group of such mixtures.

一般在所屬技術領域中使用之該聚酯樹脂及聚胺基甲酸酯樹脂可作為該黏結劑使用。較佳地,該烷氧矽烷可以是一三官能基或四官能基之烷氧矽烷化合物。更詳而言之,該烷氧矽烷可以是三甲氧矽烷及/或四乙氧矽烷。 The polyester resin and polyurethane resin generally used in the art can be used as the binder. Preferably, the alkoxydecane may be a trifunctional or tetrafunctional alkoxydecane compound. More specifically, the alkoxydecane may be trimethoxy decane and/or tetraethoxy decane.

該導電聚合物可以是一以聚噻吩為主之導電聚合物、一以聚苯胺為主之導電聚合物或一以聚吡咯為主之導電聚合物,較佳的是,一以聚噻吩為主之導電聚合物,更佳的是,一以聚乙烯二氧噻吩(PEDT)為主之導電聚合物,且最佳的是以聚苯乙烯磺酸酯摻雜之聚乙烯二氧噻吩。 The conductive polymer may be a conductive polymer mainly composed of polythiophene, a conductive polymer mainly composed of polyaniline or a conductive polymer mainly composed of polypyrrole, and preferably, polythiophene is mainly used. The conductive polymer, more preferably, a conductive polymer mainly composed of polyethylene dioxythiophene (PEDT), and most preferably polystyrene sulfonate doped polyethylene dioxythiophene.

施加該導電聚合物溶液之方法可藉一所屬技術領域中公知之習知方法實施。例如,該導電聚合物溶液可藉桿塗、輥塗、浸塗、旋塗等施加。接著,該施加之導電聚合物溶液可在一100至145℃之溫度乾燥1至10分鐘。藉施加及乾燥該導電聚合物溶液形成之導電層201之厚度可為大約1至5μm。 The method of applying the conductive polymer solution can be carried out by a conventional method known in the art. For example, the conductive polymer solution can be applied by bar coating, roll coating, dip coating, spin coating or the like. Next, the applied conductive polymer solution can be dried at a temperature of 100 to 145 ° C for 1 to 10 minutes. The conductive layer 201 formed by applying and drying the conductive polymer solution may have a thickness of about 1 to 5 μm.

依據一實施例,可藉由桿塗布在一透明基板(例如,一聚對苯二甲酸乙二酯薄膜)上施加該導電聚合物溶液(例如,一以聚噻吩為主之導電聚合物溶液)。接著,可在一烘箱中在一大約125℃乾燥該施加之導電聚合物溶液大約5分鐘。因此,可在該絕緣基板100上形成含有一以聚噻吩為主之導電聚合物且具有一等於或小於大約5μm之導電層 201。 According to an embodiment, the conductive polymer solution (for example, a conductive polymer solution mainly composed of polythiophene) may be applied on a transparent substrate (for example, a polyethylene terephthalate film) by a rod coating. . The applied conductive polymer solution can then be dried in an oven at about 125 ° C for about 5 minutes. Therefore, a conductive polymer containing a polythiophene-based conductive polymer and having a conductive layer equal to or less than about 5 μm can be formed on the insulating substrate 100. 201.

下一步驟是藉由減少該施加之導電聚合物之一部份之導電性而在該絕緣基板上形成一電極層。舉例而言,這步驟可包括在該施加之導電聚合物上噴灑一以氯為主之化合物以減少其導電性之另一步驟。以另一例而言,這步驟可包括以下步驟,即:在該施加之導電聚合物上形成一遮罩圖案;及使用該遮罩圖案在該施加之導電聚合物上噴灑一以氯為主之化合物。以再一例而言,這步驟可包括氧化該施加之導電聚合物之一部份以減少其導電性之步驟。 The next step is to form an electrode layer on the insulating substrate by reducing the conductivity of a portion of the applied conductive polymer. For example, this step can include the additional step of spraying a chlorine-based compound onto the applied conductive polymer to reduce its conductivity. In another example, the step may include the steps of: forming a mask pattern on the applied conductive polymer; and spraying the coated conductive polymer with chlorine based on the mask pattern. Compound. In still another example, this step can include the step of oxidizing a portion of the applied conductive polymer to reduce its conductivity.

請參閱圖2,在該導電層201上形成一遮罩圖案300。該遮罩圖案300暴露該導電層201之一部份,且覆蓋該導電層201之其他部份。換言之,該遮罩圖案300包含暴露該導電層201之一部份之一開口區域及覆蓋該導電層201之其他部份之一覆蓋區域。 Referring to FIG. 2, a mask pattern 300 is formed on the conductive layer 201. The mask pattern 300 exposes a portion of the conductive layer 201 and covers other portions of the conductive layer 201. In other words, the mask pattern 300 includes an open area exposing one of the portions of the conductive layer 201 and a cover area covering the other portion of the conductive layer 201.

該遮罩圖案300可藉由一光刻法形成。 The mask pattern 300 can be formed by a photolithography method.

首先,在該導電層201上形成一光阻層。該光阻層之厚度可以是大約0.5至10μm。該光阻層可包含一正型光阻樹脂或一負型光阻樹脂。該正型光阻樹脂是其受光照部份被一顯影劑蝕刻之一樹脂,且該負型光阻樹脂是其不受光影響部份被一顯影劑蝕刻之一樹脂。 First, a photoresist layer is formed on the conductive layer 201. The photoresist layer may have a thickness of about 0.5 to 10 μm. The photoresist layer may comprise a positive photoresist or a negative photoresist. The positive type resist resin is a resin whose etched portion is etched by a developer, and the negative type resist resin is a resin which is etched by a developer without being affected by the light.

為了移除在形成該光阻層後剩餘之有機溶劑,可實施一軟烘烤程序。因此,可防止由剩餘溶劑產生之污染且該光阻層之反應特性可保持不變。該軟烘烤程序可在一 60至140℃之溫度實施。 In order to remove the organic solvent remaining after the formation of the photoresist layer, a soft baking procedure can be performed. Therefore, contamination by the remaining solvent can be prevented and the reaction characteristics of the photoresist layer can be kept constant. The soft baking program can be in one It is carried out at a temperature of 60 to 140 °C.

然後,該光阻層通過一曝光程序及一顯影程序,且因此在該導電層201上形成一遮罩圖案300。 Then, the photoresist layer passes through an exposure process and a development process, and thus a mask pattern 300 is formed on the conductive layer 201.

該顯影程序係如下地進行。以光選擇地照射該光阻層。因此,改變該光阻層之受光照射部份之化學性質。當以一顯影劑噴灑該光阻層時,移除該光阻層之受光照射部份或移除該光阻層之不受光影響部份。 This development procedure was carried out as follows. The photoresist layer is selectively irradiated with light. Therefore, the chemistry of the light-irradiated portion of the photoresist layer is changed. When the photoresist layer is sprayed with a developer, the light-irradiated portion of the photoresist layer is removed or the portion of the photoresist layer that is not affected by the light is removed.

該顯影劑可以是一習知使用之鹼性水溶液(例如,氫氧化四烷銨、氫氧化鈉、氫氧化鉀、碳酸鈉)。在該顯影程序後,可在一80至180℃之溫度實施一硬烘烤程序。 The developer may be a conventionally used alkaline aqueous solution (for example, tetraammonium hydroxide, sodium hydroxide, potassium hydroxide, sodium carbonate). After the development process, a hard baking process can be carried out at a temperature of 80 to 180 °C.

如上所述,移除該光阻層之所欲部份,且因此形成該遮罩圖案300。 As described above, the desired portion of the photoresist layer is removed, and thus the mask pattern 300 is formed.

請參閱圖3,通過該遮罩圖案300在該導電層201之一部份上施加一導電性減少劑500。換言之,可通過該遮罩圖案300在該導電層201上選擇地施加該導電性減少劑500。更詳而言之,可藉由該導電性減少劑500一起浸漬該導電層201與該遮罩圖案300。 Referring to FIG. 3, a conductivity reducing agent 500 is applied to a portion of the conductive layer 201 through the mask pattern 300. In other words, the conductivity reducing agent 500 can be selectively applied to the conductive layer 201 through the mask pattern 300. More specifically, the conductive layer 201 and the mask pattern 300 may be impregnated together by the conductivity reducing agent 500.

該導電性減少劑500可以是一氧化劑。更詳而言之,該導電性減少劑500可氧化該導電層201之一部份。因此,該導電性減少劑500氧化包括在該導電層201中之一導電聚合物之一部份,藉此減少該導電層201之一部份之導電性。詳而言之,該導電性減少劑500化學地改變包括在該導電層201中之一導電聚合物之共軛雙鍵結構,因此明顯地減少該導電聚合物之導電性。 The conductivity reducing agent 500 can be an oxidizing agent. In more detail, the conductivity reducing agent 500 can oxidize a portion of the conductive layer 201. Therefore, the conductivity reducing agent 500 oxidizes a portion of one of the conductive polymers included in the conductive layer 201, thereby reducing the conductivity of a portion of the conductive layer 201. In detail, the conductivity reducing agent 500 chemically changes the conjugated double bond structure of one of the conductive polymers included in the conductive layer 201, thereby significantly reducing the conductivity of the conductive polymer.

此外,該導電性減少劑500只改變該導電層201之一部份之電特性,且可幾乎不蝕刻該導電層201。換言之,該導電性減少劑500減少該導電層201之一部份之導電性,但可幾乎不移除該導電層201之一部份。 Further, the conductivity reducing agent 500 changes only the electrical characteristics of a portion of the conductive layer 201, and the conductive layer 201 can be hardly etched. In other words, the conductivity reducing agent 500 reduces the conductivity of a portion of the conductive layer 201, but can hardly remove a portion of the conductive layer 201.

該導電性減少劑500可包含一以氯為主之化合物。詳而言之,該以氯為主之化合物可以是一異氰酸之氯化物。更詳而言之,該以氯為主之化合物可以是一異氰酸之氯化物之一金屬鹽。 The conductivity reducing agent 500 may comprise a chlorine-based compound. In detail, the chlorine-based compound may be a chloride of isocyanic acid. More specifically, the chlorine-based compound may be a metal salt of a chloride of isocyanic acid.

此外,該以氯為主之化合物可包括第I族金屬。詳而言之,該以氯為主之化合物可以是一第I族金屬之鹽。更詳而言之,第I族金屬可以是鈉。 Further, the chlorine-based compound may include a Group I metal. In detail, the chlorine-based compound may be a salt of a Group I metal. In more detail, the Group I metal can be sodium.

更詳而言之,該以氯為主之化合物可選自於由二氯異三聚氰酸鈉(C3Cl2N3NaO3),次氯酸鈉(NaOCl)及其等之混合物。 More specifically, the chlorine-based compound may be selected from the group consisting of sodium dichloroisocyanurate (C 3 Cl 2 N 3 NaO 3 ), sodium hypochlorite (NaOCl), and the like.

該導電性減少劑500可包含一溶劑。在這情形下,該以氯為主之化合物可使用以該導電性減少劑之總重量為基礎0.5至50wt%之量。較佳地,該以氯為主之化合物可使用以該導電性減少劑之總重量為基礎1至50wt%之量。更佳地,該以氯為主之化合物可使用以該導電性減少劑之總重量為基礎25至48wt%之量。 The conductivity reducing agent 500 may contain a solvent. In this case, the chlorine-based compound may be used in an amount of from 0.5 to 50% by weight based on the total weight of the conductivity reducing agent. Preferably, the chlorine-based compound can be used in an amount of from 1 to 50% by weight based on the total weight of the conductivity reducing agent. More preferably, the chlorine-based compound may be used in an amount of from 25 to 48% by weight based on the total weight of the conductivity reducing agent.

當該以氯為主之化合物在該導電性減少劑中之量過高時,該導電性減少劑500之安定性會減少。換言之,當該以氯為主之化合物之量超過50wt%時,該以氯為主之化合物聚集,且因此該導電性減少劑500之導電性減少效 果會降低。 When the amount of the chlorine-based compound in the conductivity reducing agent is too high, the stability of the conductivity reducing agent 500 is reduced. In other words, when the amount of the chlorine-based compound exceeds 50% by weight, the chlorine-based compound aggregates, and thus the conductivity of the conductivity reducing agent 500 is reduced. If it will decrease.

此外,當該以氯為主之化合物在該導電性減少劑中之量過低時,該導電性減少劑500之反應性(氧化力)會減少,且因此該導電性減少劑500之導電性減少效果會降低。 Further, when the amount of the chlorine-based compound in the conductivity reducing agent is too low, the reactivity (oxidation power) of the conductivity reducing agent 500 is decreased, and thus the conductivity of the conductivity reducing agent 500 is lowered. The reduction effect will be reduced.

包括在該導電性減少劑500中之溶劑並無特殊限制,但是蒸餾水是較佳的。 The solvent included in the conductivity reducing agent 500 is not particularly limited, but distilled water is preferred.

該導電性減少劑500之溫度可為大約10至80℃,且宜為大約20至60℃。此外,該導電層201藉該導電性減少劑500之浸漬時間可為大約0.1至30分鐘,且宜為大約0.3至20分鐘。 The temperature of the conductivity reducing agent 500 may be about 10 to 80 ° C, and is preferably about 20 to 60 ° C. In addition, the immersion time of the conductive layer 201 by the conductivity reducing agent 500 may be about 0.1 to 30 minutes, and preferably about 0.3 to 20 minutes.

該導電層201之一部份之導電性係藉由該導電性減少程序明顯地減少。因此,在該導電層201中,藉該遮罩圖案300暴露之部份形成一非導電圖案220。即,在該導電層201中,具有明顯減少之導電性之部份係該非導電圖案220。換言之,該非導電圖案220可包含一藉由氧化該導電聚合物形成之聚合物。 The conductivity of a portion of the conductive layer 201 is significantly reduced by the conductivity reduction procedure. Therefore, in the conductive layer 201, a portion of the exposed portion of the mask pattern 300 forms a non-conductive pattern 220. That is, in the conductive layer 201, the portion having the significantly reduced conductivity is the non-conductive pattern 220. In other words, the non-conductive pattern 220 may comprise a polymer formed by oxidizing the conductive polymer.

同時,該導電層201之其他部份係藉由該遮罩圖案300保護,且其導電性不受影響。因此,在該導電層201中,該導電不受影響之部份形成一導電圖案210。換言之,該導電層201之其他部份是該導電圖案210。 At the same time, other portions of the conductive layer 201 are protected by the mask pattern 300, and their conductivity is not affected. Therefore, in the conductive layer 201, the portion of the conductive unaffected portion forms a conductive pattern 210. In other words, the other portion of the conductive layer 201 is the conductive pattern 210.

因此,形成包括該導電圖案210及該非導電圖案220之一電極層200。換言之,該電極層200係藉由改變該導電層201之一部份之電特性而形成。 Therefore, the electrode layer 200 including the conductive pattern 210 and the non-conductive pattern 220 is formed. In other words, the electrode layer 200 is formed by changing the electrical characteristics of a portion of the conductive layer 201.

該導電圖案210及該非導電圖案220係形成為使得它們互相結合成一體。即,只有一電界面存在該導電圖案210與該非導電圖案220之間,且一機械界面不存在該導電圖案210與該非導電圖案220之間。 The conductive pattern 210 and the non-conductive pattern 220 are formed such that they are integrated with each other. That is, only one electrical interface exists between the conductive pattern 210 and the non-conductive pattern 220, and a mechanical interface does not exist between the conductive pattern 210 and the non-conductive pattern 220.

此外,在該導電圖案210與該非導電圖案220之間之光學性質之差幾乎不存在。換言之,在該導電圖案210與該非導電圖案220之間之透光度之差可為大約0.0001至0.1%。又,在該導電圖案210與該非導電圖案220之間之折射率之差可為大約0.0001至0.01。 Further, the difference in optical properties between the conductive pattern 210 and the non-conductive pattern 220 hardly exists. In other words, the difference in transmittance between the conductive pattern 210 and the non-conductive pattern 220 may be about 0.0001 to 0.1%. Moreover, the difference in refractive index between the conductive pattern 210 and the non-conductive pattern 220 may be about 0.0001 to 0.01.

該導電圖案210與該非導電圖案220之間之導電性之差相當大。例如,該導電圖案210之導電性可為該非導電圖案220之導電性之大約10倍或10倍以上。詳而言之,該導電圖案210之導電性可為該非導電圖案220之導電性之大約100倍或100倍以上。更詳而言之,該導電圖案210之導電性可為該非導電圖案220之導電性之大約1,000倍或1,000倍以上。更詳而言之,該導電圖案210之導電性可為該非導電圖案220之導電性之大約106倍或106倍以上。更詳而言之,該導電圖案210之導電性可為該非導電圖案220之導電性之大約1010倍或1010倍以上。更詳而言之,該導電圖案210之導電性可為該非導電圖案220之導電性之大約1020倍或1020倍以上。因此,該導電圖案210可以是一導體,且該非導電圖案220可以是一絕緣體。 The difference in electrical conductivity between the conductive pattern 210 and the non-conductive pattern 220 is quite large. For example, the conductivity of the conductive pattern 210 may be about 10 times or more than the conductivity of the non-conductive pattern 220. In detail, the conductivity of the conductive pattern 210 may be about 100 times or more of the conductivity of the non-conductive pattern 220. In more detail, the conductivity of the conductive pattern 210 may be about 1,000 times or more than the conductivity of the non-conductive pattern 220. And more particularly to the conductive pattern 210 of conductive may be for more than about 106 times or 106 times the conductive pattern 220 of the non-conductive. In more detail, the conductivity of the conductive pattern 210 may be about 10 10 or 10 10 times or more of the conductivity of the non-conductive pattern 220. In more detail, the conductivity of the conductive pattern 210 may be about 10 20 times or more than 10 20 times the conductivity of the non-conductive pattern 220. Therefore, the conductive pattern 210 can be a conductor, and the non-conductive pattern 220 can be an insulator.

該導電圖案210之導電性可為大約100至10,000S/cm。詳而言之,該導電圖案210之導電性可為大 約500至3,000S/cm。又,該導電圖案210之表面電阻可為大約10至5,000Ω/sq。詳而言之,該導電圖案210之表面電阻可為大約50至1,000Ω/sq。更詳而言之,該導電圖案210之表面電阻可為大約100至500Ω/sq。 The conductivity of the conductive pattern 210 may be about 100 to 10,000 S/cm. In detail, the conductivity of the conductive pattern 210 can be large. About 500 to 3,000 S/cm. Also, the surface resistance of the conductive pattern 210 may be about 10 to 5,000 Ω/sq. In detail, the surface resistance of the conductive pattern 210 may be about 50 to 1,000 Ω/sq. In more detail, the surface resistance of the conductive pattern 210 may be about 100 to 500 Ω/sq.

該非導電圖案220之導電性可為大約10-5至10-15S/cm。詳而言之,該非導電圖案220之導電性可為大約10-7至10-9S/cm。又,該非導電圖案220之表面電阻可大約等於或大於1012Ω/sq。詳而言之,該非導電圖案220之表面電阻可為大約1012至1020Ω/sq。更詳而言之,該非導電圖案220之表面電阻可為大約1013至1020Ω/sq。 The non-conductive pattern 220 may have a conductivity of about 10 -5 to 10 -15 S/cm. In detail, the conductivity of the non-conductive pattern 220 may be about 10 -7 to 10 -9 S/cm. Also, the surface resistance of the non-conductive pattern 220 may be approximately equal to or greater than 10 12 Ω/sq. In detail, the non-conductive pattern 220 may have a surface resistance of about 10 12 to 10 20 Ω/sq. In more detail, the non-conductive pattern 220 may have a surface resistance of about 10 13 to 10 20 Ω/sq.

該導電圖案210及該非導電圖案220係設置在相同層中。詳而言之,該導電圖案210之表面及該非導電圖案220之表面可設置在相同平面中。 The conductive pattern 210 and the non-conductive pattern 220 are disposed in the same layer. In detail, the surface of the conductive pattern 210 and the surface of the non-conductive pattern 220 may be disposed in the same plane.

例如,該導電圖案210之下表面及該非導電圖案220之下表面可設置在相同平面中。又,由於該非導電圖案220幾乎未被蝕刻,故該導電圖案210之上表面及該非導電圖案220之上表面亦可設置在相同平面中。換言之,一凸塊可幾乎不形成在該非導電圖案220與該導電圖案210之間。 For example, the lower surface of the conductive pattern 210 and the lower surface of the non-conductive pattern 220 may be disposed in the same plane. Moreover, since the non-conductive pattern 220 is hardly etched, the upper surface of the conductive pattern 210 and the upper surface of the non-conductive pattern 220 may also be disposed in the same plane. In other words, a bump may be hardly formed between the non-conductive pattern 220 and the conductive pattern 210.

因此,在該電極層200上之圖案可具有較佳不可見性。即,由於一光學界面幾乎不存在該導電圖案210與該非導電圖案220之間,故該電極層200可具有較佳光均一性。 Therefore, the pattern on the electrode layer 200 can have better invisibility. That is, since an optical interface is hardly present between the conductive pattern 210 and the non-conductive pattern 220, the electrode layer 200 can have better light uniformity.

請參閱圖4,移除該遮罩圖案。該遮罩圖案可藉 由一剝離程序移除。在這情形下,該剝離溶液可包含一溶劑、一胺化合物及一銨鹽。。接著,可以蒸餾水沖洗該電極層200。 Referring to Figure 4, the mask pattern is removed. The mask pattern can be borrowed Removed by a stripping procedure. In this case, the stripping solution may comprise a solvent, an amine compound, and a monoammonium salt. . Next, the electrode layer 200 can be rinsed with distilled water.

在該剝離溶液中使用之溶劑之例子可包括二甲基亞碸,乙烯碳酸酯及其等之混合物。該胺化合物之例子可包括N-甲基吡咯烷酮,N,N-二甲基甲醯胺,乙醯胺,N-甲基乙醯胺及其等之混合物。 Examples of the solvent used in the stripping solution may include a mixture of dimethyl hydrazine, ethylene carbonate, and the like. Examples of the amine compound may include N-methylpyrrolidone, N,N-dimethylformamide, acetamide, N-methylacetamide, and the like.

在上述製造一電極基板之方法中,該顯影程序及該剝離程序可藉由浸漬或噴灑法實施,但是不限於此。 In the above method of manufacturing an electrode substrate, the developing process and the peeling process may be carried out by dipping or spraying, but are not limited thereto.

輸入裝置及顯示裝置 Input device and display device

圖5是顯示依據本發明之一實施例之一觸控面板型輸入裝置之橫截面圖。這觸控面板型輸入裝置可參照上述電極基板之說明來說明。換言之,上述電極基板之說明可實際地用於說明該觸控面板型輸入裝置。 Figure 5 is a cross-sectional view showing a touch panel type input device in accordance with an embodiment of the present invention. This touch panel type input device can be explained with reference to the above description of the electrode substrate. In other words, the description of the above electrode substrate can be practically used to explain the touch panel type input device.

請參閱圖5,依據本發明之一實施例之觸控面板型輸入裝置包括一上基板11及一下基板12。 Referring to FIG. 5 , a touch panel type input device according to an embodiment of the invention includes an upper substrate 11 and a lower substrate 12 .

該上基板11及該下基板12互相相向。又,該上基板11及該下基板12可互相分開一預定間距。又,一分隔件(未顯示在圖5中)可設置在該上基板11與該下基板12之間。該分隔件可使該上基板11與該下基板12互相分離一預定間距。 The upper substrate 11 and the lower substrate 12 face each other. Further, the upper substrate 11 and the lower substrate 12 may be separated from each other by a predetermined interval. Further, a spacer (not shown in FIG. 5) may be disposed between the upper substrate 11 and the lower substrate 12. The spacer may separate the upper substrate 11 and the lower substrate 12 by a predetermined interval.

該上基板11包含一第一絕緣基板101及一第一電極層202。該第一電極層202係設置在該第一絕緣基板101下方。 The upper substrate 11 includes a first insulating substrate 101 and a first electrode layer 202. The first electrode layer 202 is disposed under the first insulating substrate 101.

該第一絕緣基板101可具有與上述電極基板之絕緣基板100之結構實質相同之結構。又,該第一電極層202可具有與上述電極層200之結構實質相同之結構。 The first insulating substrate 101 may have substantially the same structure as that of the insulating substrate 100 of the electrode substrate. Further, the first electrode layer 202 may have substantially the same structure as that of the electrode layer 200 described above.

該下基板12包括一第二絕緣基板102及一第二電極層203。該第二電極層203係設置在該第二絕緣基板102上。 The lower substrate 12 includes a second insulating substrate 102 and a second electrode layer 203. The second electrode layer 203 is disposed on the second insulating substrate 102.

該第二絕緣基板102可具有與上述電極基板之絕緣基板100之結構實質相同之結構。又,該第二電極層203可具有與上述電極層200之結構實質相同之結構。 The second insulating substrate 102 may have substantially the same structure as that of the insulating substrate 100 of the electrode substrate. Further, the second electrode layer 203 may have substantially the same structure as that of the electrode layer 200 described above.

該第一電極層202與該第二電極層203互相相向。又,該第一電極層202與第二電極層203可互相分開一預定間距。 The first electrode layer 202 and the second electrode layer 203 face each other. Moreover, the first electrode layer 202 and the second electrode layer 203 can be separated from each other by a predetermined interval.

該上基板11及該下基板12可藉由一外壓力互相接觸。因此,電流可流經該第一電極層202及該第二電極層203。在這情形下,可依據該第一電極層202及該第二電極層203互相接觸之位置改變該輸入裝置之總電阻。因此,可藉由電阻值之差決定該上基板11之接觸部份。 The upper substrate 11 and the lower substrate 12 are in contact with each other by an external pressure. Therefore, a current can flow through the first electrode layer 202 and the second electrode layer 203. In this case, the total resistance of the input device can be changed according to the position at which the first electrode layer 202 and the second electrode layer 203 contact each other. Therefore, the contact portion of the upper substrate 11 can be determined by the difference in resistance values.

依據這實施例之觸控面板型輸入裝置包含具有較佳圖案不可見性之電極層202與203。因此,當這輸入裝置應用在顯示一影像之一顯示裝置時,可防止一影像之失真。 The touch panel type input device according to this embodiment includes electrode layers 202 and 203 having better pattern invisibility. Therefore, when the input device is applied to display one of the image display devices, distortion of an image can be prevented.

圖6是顯示依據本發明之一實施例之一顯示裝置之橫截面圖。這顯示裝置可參照上述電極基板之說明來說明。換言之,上述電極基板之說明可實際地用於說明該顯 示裝置。 Figure 6 is a cross-sectional view showing a display device in accordance with an embodiment of the present invention. This display device can be explained with reference to the description of the electrode substrate described above. In other words, the description of the above electrode substrate can be practically used to illustrate the display. Display device.

請參閱圖6,依據本發明之一實施例之觸控面板型輸入裝置包括一前基板103,一第三電極層204,一發光層400及一第四電極層205。 Referring to FIG. 6 , a touch panel type input device according to an embodiment of the invention includes a front substrate 103 , a third electrode layer 204 , a light emitting layer 400 and a fourth electrode layer 205 .

該前基板103可實質等同於上述電極基板之絕緣基板100。一影像可以通過該前基板103向上之方向顯示。 The front substrate 103 can be substantially identical to the insulating substrate 100 of the above electrode substrate. An image can be displayed in the upward direction by the front substrate 103.

該第三電極層204係設置在該前基板103下方。該第三電極層204可實質等同於上述電極層200。 The third electrode layer 204 is disposed under the front substrate 103. The third electrode layer 204 may be substantially identical to the electrode layer 200 described above.

該發光層400可包含一有機發光層。又,該發光層400可包括一電子輸送層及一電洞輸送層。該發光層400可包括一主體及一施加在該主體上摻雜物。作為該主體使用之材料之例子可包括以咔唑為主之有機材料及以蒽為主之有機材料。作為該摻雜物使用之材料之例子可包括藍、綠及紅螢光材料及磷光材料。相反地,該發光層400可包括一無機發光材料。 The light emitting layer 400 may include an organic light emitting layer. Moreover, the light emitting layer 400 can include an electron transport layer and a hole transport layer. The luminescent layer 400 can include a body and a dopant applied to the body. Examples of the material used as the main body may include an organic material mainly composed of carbazole and an organic material mainly composed of ruthenium. Examples of the material used as the dopant may include blue, green, and red fluorescent materials and phosphorescent materials. Conversely, the luminescent layer 400 can include an inorganic luminescent material.

該第四電極層205係設置在該發光層400下方。換言之,該發光層400被夾在該第三電極層204與該第四電極層205之間。電流係透過該第三電極層204及該第四電極層205施加至該發光層400,且因此該發光層400可顯示一影像。 The fourth electrode layer 205 is disposed under the light emitting layer 400. In other words, the light emitting layer 400 is sandwiched between the third electrode layer 204 and the fourth electrode layer 205. A current is applied to the light emitting layer 400 through the third electrode layer 204 and the fourth electrode layer 205, and thus the light emitting layer 400 can display an image.

依據這實施例之顯示裝置包含一具有較佳圖案不可見性之電極層200。因此,這顯示裝置可防止一影像之失真且可具有較佳影像品質。 The display device according to this embodiment comprises an electrode layer 200 having a better pattern invisibility. Therefore, the display device can prevent distortion of an image and can have better image quality.

依據這實施例之電極基板可應用於各種觸控面 板型輸入裝置及各種顯示裝置且不限於圖5與6中所示之輸入裝置及顯示裝置。又,依據這實施例之電極基板可供電磁波屏蔽薄膜,電致發光(EL)電極薄膜,用於顯示器之透明電極薄膜,用於TV布勞恩管及電腦監視器之電磁波屏蔽層,用於電氣與電子器具之觸控面板型導電薄膜等使用。 The electrode substrate according to this embodiment can be applied to various touch surfaces The plate type input device and various display devices are not limited to the input device and display device shown in FIGS. 5 and 6. Moreover, the electrode substrate according to the embodiment can be used for an electromagnetic wave shielding film, an electroluminescence (EL) electrode film, a transparent electrode film for a display, an electromagnetic wave shielding layer for a TV Braun tube and a computer monitor, for Used in touch panel type conductive films for electrical and electronic appliances.

此外,在以上實施例中所述之特徵、結構及效果可顯示在一或一以上之實施例中且它們不限於包括在一特定實施例中。此外,所屬技術領域中具有通常知識者可在其他實施例中多樣地組合及修改該等特徵、結構及效果。因此,該等組合及修改應被解釋為包括在本發明之範疇中。 Furthermore, the features, structures, and effects described in the above embodiments may be shown in one or more embodiments and they are not limited to being included in a particular embodiment. In addition, those skilled in the art can variously combine and modify the features, structures, and effects in other embodiments. Accordingly, such combinations and modifications are to be construed as included within the scope of the invention.

雖然本發明已對只用以達成顯示目的而不限制本發明之特定實施例說明過了,但是應了解的是所屬技術領域中具有通常知識者可對本發明進行各種修改及變化。例如,可多樣地修改在實施例中特別說明之每一組件。該等修改及變化應被解釋為落在如由以下申請專利範圍所界定之本發明範疇內。 While the invention has been described with respect to the specific embodiments of the present invention, it is understood that various modifications and changes can be made to the invention. For example, each component specifically described in the embodiments can be variously modified. Such modifications and variations are to be construed as falling within the scope of the invention as defined by the following claims.

例1至4及比較例1至7 Examples 1 to 4 and Comparative Examples 1 to 7

步驟(1):製備導電性減少劑 Step (1): preparing a conductivity reducing agent

以下表1中舉出之各組分與蒸餾水分別地混合以製備具有對應固體含量之導電性減少劑。 The components exemplified in Table 1 below were separately mixed with distilled water to prepare a conductivity reducing agent having a corresponding solid content.

步驟(2):形成一導電層 Step (2): forming a conductive layer

製備一包含以聚苯乙烯磺酸酯摻雜之聚乙烯二氧噻吩,甲醇,丙醇,N-甲基乙醯胺及三甲氧矽烷之導電聚合物溶液。施加該製備之導電聚合物溶液至一聚對苯二 甲酸乙二酯薄膜上,且接著在一烘箱中在大約125℃乾燥大約5分鐘以形成一導電層。如此獲得之導電層之厚度係大約5μm,且其導電性係大約1,000S/cm。 A conductive polymer solution comprising polyethylene dioxythiophene doped with polystyrene sulfonate, methanol, propanol, N-methylacetamide and trimethoxy decane was prepared. Applying the prepared conductive polymer solution to a polyparaphenylene The ethylene formate film was then dried in an oven at about 125 ° C for about 5 minutes to form a conductive layer. The conductive layer thus obtained had a thickness of about 5 μm and a conductivity of about 1,000 S/cm.

步驟(3):形成一圖案 Step (3): forming a pattern

使用在步驟(1)中製備之導電性減少劑藉光刻對在步驟(2)中獲得之導電層進行圖案化處理。詳而言之,在該導電層上施加一抗蝕層至一2至4μm之厚度,接著在一120℃之加熱溫度軟烘烤。然後,使用一遮罩選擇地使該抗蝕層曝光,接著使用一顯影劑移除該抗蝕層之修改部份,然後在一140℃之加熱溫度硬烘烤以便在該導電層上形成一遮罩圖案。接著,在該導電層上施加在步驟(1)中製備之導電性減少劑以減少未被該遮罩圖案覆蓋之部份之導電性。因此,形成具有一導電圖案及一非導電圖案之一電極層。然後,移除該遮罩圖案,接著以蒸餾水沖洗該電極層。 The conductive layer obtained in the step (2) is patterned by photolithography using the conductivity reducing agent prepared in the step (1). Specifically, a resist layer is applied to the conductive layer to a thickness of 2 to 4 μm, followed by soft baking at a heating temperature of 120 °C. Then, the resist layer is selectively exposed using a mask, and then a modified portion of the resist layer is removed using a developer, and then hard baked at a heating temperature of 140 ° C to form a conductive layer on the conductive layer. Mask pattern. Next, the conductivity reducing agent prepared in the step (1) is applied on the conductive layer to reduce the conductivity of the portion not covered by the mask pattern. Therefore, one electrode layer having one conductive pattern and one non-conductive pattern is formed. Then, the mask pattern is removed, and then the electrode layer is rinsed with distilled water.

測試例 Test case

測試(1):一導電性減少劑之反應性 Test (1): Reactivity of a conductivity reducing agent

評價在該等例子及比較例中製備之各導電性減少劑之反應性。詳而言之,在各例子及比較例之步驟(3)中,與該導電性減少劑反應之該電極基板之表面電阻係藉一電阻計(Tuustat worksurface tester ST-3(SIMCO公司)測量且依據獲得對應於一等於或大於1013Ω/□之表面電阻之絕緣效能所花費之時間分成以下類型:○:小於20分鐘,△:等於或大於20分鐘至小於30分鐘,×:等於或大於30分鐘 The reactivity of each of the conductivity reducing agents prepared in the examples and the comparative examples was evaluated. In detail, in the step (3) of each of the examples and the comparative examples, the surface resistance of the electrode substrate which is reacted with the conductivity reducing agent is measured by a resistance meter (Tuustat work surface tester ST-3 (SIMCO)) The time taken to obtain the insulation performance corresponding to a surface resistance equal to or greater than 10 13 Ω/□ is classified into the following types: ○: less than 20 minutes, Δ: equal to or greater than 20 minutes to less than 30 minutes, ×: equal to or greater than 30 minutes

測試(2):一導電性減少劑之安定性 Test (2): Stability of a conductivity reducing agent

將在該等例子及比較例之步驟(1)中製備之各導電性減少劑放在室溫中5天,接著依據其聚集度評價其安定性。換言之,當各導電性減少劑未聚集時,其安定性被視為“良好”,且當各導電性減少劑聚集時,其安定性被視為“不良”。但是,在以下表1中,未評價具有低反應性之導電性減少劑之安定性。 Each of the conductivity reducing agents prepared in the steps (1) of the above examples and comparative examples was allowed to stand at room temperature for 5 days, and then its stability was evaluated in accordance with the degree of aggregation thereof. In other words, when each of the conductivity reducing agents is not aggregated, its stability is regarded as "good", and when each of the conductivity reducing agents is aggregated, its stability is regarded as "poor". However, in Table 1 below, the stability of the conductivity-reducing agent having low reactivity was not evaluated.

測試(3):一圖案之不可見性 Test (3): Invisibility of a pattern

藉由色度差評價在該等例子及比較例中製造之各電極基板上形成之一圖案之不可見性。換言之,藉由使用一UV光譜儀(CM-3500d,Minolta公司)分別測量暴露於該導電性減少劑之非導電圖案及未暴露於該導電性減少劑之導電圖案對具有一550nm之波長之透射光的b*值,接著藉由在該等b*值之間的差如下地評價各圖案之可見性:△b* 1.5:良好(不容易看見圖案),△b*>1.5(容易看見圖案)。 The invisibility of one of the patterns formed on each of the electrode substrates manufactured in the examples and the comparative examples was evaluated by the chromaticity difference. In other words, by using a UV spectrometer (CM-3500d, Minolta Corporation), the non-conductive pattern exposed to the conductivity reducing agent and the conductive pattern pair not exposed to the conductivity reducing agent are respectively transmitted to have a wavelength of 550 nm. The b * value, and then the visibility of each pattern is evaluated by the difference between the b * values as follows: Δb * 1.5: Good (not easy to see the pattern), △b * > 1.5 (easy to see the pattern).

但是,在以下表1中,未對具有低反應性之導電性減少劑評價各圖案之不可見性。 However, in Table 1 below, the invisibility of each pattern was not evaluated for the conductivity reducing agent having low reactivity.

同時,確定在該導電減少程序已終止後該導電圖案之表面電阻未改變。換言之,未與該導電性減少劑反應之電極基板之一部份具有與該初始製備之導電層之表面電阻相同之表面電阻。 At the same time, it is determined that the surface resistance of the conductive pattern is not changed after the conduction reduction procedure has been terminated. In other words, a portion of the electrode substrate that does not react with the conductivity reducing agent has the same surface resistance as that of the initially prepared conductive layer.

該等導電性減少劑之反應性及安定性以及圖案之不可見性之評價結果係顯示在以下表1中。 The results of evaluation of the reactivity and stability of the conductivity reducing agents and the invisibility of the pattern are shown in Table 1 below.

C3Cl2N3NaO3:二氯異三聚氰酸鈉(Aldrich) C 3 Cl 2 N 3 NaO 3 : sodium dichloroisocyanurate (Aldrich)

(NH4)2Ce(NO3)6:硝酸鈰銨(Aldrich) (NH 4 ) 2 Ce(NO 3 ) 6 : ammonium cerium nitrate (Aldrich)

NaOCl:次氯酸鈉(Aldrich) NaOCl: sodium hypochlorite (Aldrich)

NaClO3:氯酸鈉(Aldrich) NaClO 3 : sodium chlorate (Aldrich)

Na2SO3:硫酸鈉(Aldrich) Na 2 SO 3 : sodium sulfate (Aldrich)

KMnO4:過錳酸鉀(Aldrich) KMnO 4 : potassium permanganate (Aldrich)

Ce(SO4)2:硫酸鈰(Aldrich) Ce(SO 4 ) 2 : barium sulfate (Aldrich)

NaHSO:亞硫酸氫鈉(Aldrich) NaHSO: sodium bisulfite (Aldrich)

溶劑:蒸餾水 Solvent: distilled water

如以上表1所示,已觀察到當使用一適當量之在例1至4中之以氯為主之導電性減少劑時,圖案之不可見性 及該等導電性減少劑之感應性與安定性是良好的。 As shown in Table 1 above, it has been observed that the pattern is invisible when an appropriate amount of the chlorine-based conductivity reducing agent in Examples 1 to 4 is used. And the inductivity and stability of the conductivity reducing agents are good.

相反地,已觀察到當使用在一習知導電減少程序中使用之比較例1之含硝酸鈰銨氧化劑作為一導電性減少劑時,圖案之不可見性是不良的。 On the contrary, it has been observed that the pattern invisibility is unfavorable when the cerium nitrate-containing oxidizing agent of Comparative Example 1 used in a conventional conduction reduction procedure is used as a conductivity reducing agent.

此外,可確定的是當使用比較例2至6之氧化劑作為一導電性減少劑時,即使在一導電聚合物薄膜浸漬在各氧化劑中20分鐘時亦不會發生一反應。 Further, it was confirmed that when the oxidizing agents of Comparative Examples 2 to 6 were used as a conductivity reducing agent, a reaction did not occur even when a conductive polymer film was immersed in each oxidizing agent for 20 minutes.

又,可確定的是各以一等於或大於50wt%之量過量地包括一以氯為主之氧化劑的比較例7至9之導電性減少劑具有不良穩定性。 Further, it was confirmed that the conductivity reducing agents of Comparative Examples 7 to 9 each containing a chlorine-based oxidizing agent in an amount of equal to or more than 50% by weight in excess of each other had poor stability.

雖然本發明已對特定實施例說明過了,但是所屬技術領域中具有通常知識者應了解的是可對本發明進行各種修改及改變,且該等修改及改變亦落在如由以下申請專利範圍所界定之本發明之範疇內。 Although the present invention has been described in terms of the specific embodiments, it is understood by those of ordinary skill in the art that various modifications and changes can be made in the present invention. Within the scope of the invention as defined.

11‧‧‧上基板 11‧‧‧Upper substrate

12‧‧‧下基板 12‧‧‧ Lower substrate

101‧‧‧第一絕緣基板 101‧‧‧First insulating substrate

102‧‧‧第二絕緣基板 102‧‧‧Second insulating substrate

202‧‧‧第一電極層 202‧‧‧First electrode layer

203‧‧‧第二電極層 203‧‧‧Second electrode layer

Claims (19)

一種電極基板,包含:一絕緣基板;及一電極層,係設置在該絕緣基板上,其中該電極層包含一含有一導電聚合物之導電圖案,及一非導電圖案,且該導電圖案及該非導電圖案係一體地設置在相同層中。 An electrode substrate comprising: an insulating substrate; and an electrode layer disposed on the insulating substrate, wherein the electrode layer comprises a conductive pattern containing a conductive polymer, and a non-conductive pattern, and the conductive pattern and the non-conductive layer The conductive patterns are integrally disposed in the same layer. 如申請專利範圍第1項之電極基板,其中該非導電圖案包含一藉由氧化該導電聚合物而形成之聚合物。 The electrode substrate of claim 1, wherein the non-conductive pattern comprises a polymer formed by oxidizing the conductive polymer. 如申請專利範圍第1項之電極基板,其中該導電圖案之表面及該非導電圖案之表面係設置在相同平面中。 The electrode substrate of claim 1, wherein the surface of the conductive pattern and the surface of the non-conductive pattern are disposed in the same plane. 如申請專利範圍第1項之電極基板,其中該導電圖案之導電性係該非導電圖案之導電性之大約1,000倍或1,000倍以上。 The electrode substrate of claim 1, wherein the conductivity of the conductive pattern is about 1,000 times or more of the conductivity of the non-conductive pattern. 如申請專利範圍第4項之電極基板,其中該導電圖案之導電性係該非導電圖案之導電性之大約106倍或106倍以上。 The scope of the patent application electrode substrate, Paragraph 4, wherein the conductive lines of the non-conductive pattern of more than about 106 times the conductivity of the conductive pattern or 106-fold. 如申請專利範圍第1項之電極基板,其中該導電圖案之導電性係大約100至10,000S/cm,且該非導電圖案之導電性係大約10-5至10-15S/cm。 The electrode substrate of claim 1, wherein the conductivity of the conductive pattern is about 100 to 10,000 S/cm, and the conductivity of the non-conductive pattern is about 10 -5 to 10 -15 S/cm. 如申請專利範圍第1項之電極基板,其中該導電圖案係作為一導體,且該非導電圖案係作為一絕緣體。 The electrode substrate of claim 1, wherein the conductive pattern serves as a conductor, and the non-conductive pattern serves as an insulator. 一種輸入裝置,包含如申請專利範圍第1項之電極基板。 An input device comprising the electrode substrate of claim 1 of the patent application. 一種顯示裝置,包含如申請專利範圍第1項之電極基板。 A display device comprising the electrode substrate of claim 1 of the patent application. 一種用以製造一電極基板之方法,包含以下步驟: (a)在一絕緣基板上施加一導電聚合物;及(b)藉由減少該經施加之導電聚合物之一部份的導電性,以在該絕緣基板上形成一電極層,其中該電極層包含一含有該導電聚合物之導電圖案,及一含有該經導電性減少之聚合物的非導電圖案。 A method for manufacturing an electrode substrate, comprising the steps of: (a) applying a conductive polymer on an insulating substrate; and (b) forming an electrode layer on the insulating substrate by reducing conductivity of a portion of the applied conductive polymer, wherein the electrode The layer comprises a conductive pattern comprising the conductive polymer and a non-conductive pattern comprising the reduced conductivity polymer. 如申請專利範圍第10項之方法,其中該步驟(b)更包含在該經施加之導電聚合物的一部份上噴灑一以氯為主之化合物以減少其導電性之步驟。 The method of claim 10, wherein the step (b) further comprises the step of spraying a chlorine-based compound on a portion of the applied conductive polymer to reduce its conductivity. 如申請專利範圍第11項之方法,包含以下步驟:(b-1)在該經施加之導電聚合物上形成一遮罩圖案;及(b-2)透過該遮罩圖案在該經施加之導電聚合物上噴灑一以氯為主之化合物。 The method of claim 11, comprising the steps of: (b-1) forming a mask pattern on the applied conductive polymer; and (b-2) transmitting the mask pattern through the mask. A chlorine-based compound is sprayed onto the conductive polymer. 如申請專利範圍第10項之方法,其中該步驟(b)包含氧化該經施加之導電聚合物的一部份以減少其導電性之步驟。 The method of claim 10, wherein the step (b) comprises the step of oxidizing a portion of the applied conductive polymer to reduce its conductivity. 如申請專利範圍第10項之方法,其中該導電圖案及該非導電圖案係設置在相同層中。 The method of claim 10, wherein the conductive pattern and the non-conductive pattern are disposed in the same layer. 如申請專利範圍第14項之方法,其中該導電圖案之表面及該非導電圖案之表面係設置在相同平面中。 The method of claim 14, wherein the surface of the conductive pattern and the surface of the non-conductive pattern are disposed in the same plane. 如申請專利範圍第10項之方法,其中該導電圖案之導電性係該非導電圖案之導電性之大約100倍或100倍以上。 The method of claim 10, wherein the conductivity of the conductive pattern is about 100 times or more of the conductivity of the non-conductive pattern. 一種導電性減少劑,包含一以氯為主之化合物及一溶劑,其中該以氯為主之化合物係以大約0.5至50wt%之量 來使用。 A conductivity reducing agent comprising a chlorine-based compound and a solvent, wherein the chlorine-based compound is in an amount of about 0.5 to 50% by weight To use. 如申請專利範圍第17項之導電性減少劑,其中該以氯為主之化合物係一異氰酸之氯化物。 The conductivity reducing agent according to claim 17, wherein the chlorine-based compound is a chloride of isocyanic acid. 如申請專利範圍第17項之導電性減少劑,其中該以氯為主之化合物包含第I族金屬。 The conductivity reducing agent according to claim 17, wherein the chlorine-based compound comprises a Group I metal.
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