TW201344998A - Wavelength conversion unit, method for manufacturing the same, light emitting device and illumination device each comprising the wavelength conversion unit therein, and resin composition - Google Patents

Wavelength conversion unit, method for manufacturing the same, light emitting device and illumination device each comprising the wavelength conversion unit therein, and resin composition Download PDF

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TW201344998A
TW201344998A TW102107188A TW102107188A TW201344998A TW 201344998 A TW201344998 A TW 201344998A TW 102107188 A TW102107188 A TW 102107188A TW 102107188 A TW102107188 A TW 102107188A TW 201344998 A TW201344998 A TW 201344998A
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wavelength conversion
light
conversion member
resin
phosphor
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TW102107188A
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Chinese (zh)
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Hiroshi Nakano
Tadahiro Katsumoto
Toshiaki Yokoo
Hiroya Kodama
Hisashi Yoshida
Masami Suzuki
Daisuke Yamamoto
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Mitsubishi Chem Corp
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/20Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials

Abstract

To provide a wavelength conversion unit that can secure sufficient total luminous flux even in a white LED in particular, which has a low color temperature, and a method for manufacturing the same, a light emitting device and illumination device each comprising the wavelength conversion unit therein, and a resin composition. The problem is solved by a wavelength conversion unit that carries out a wavelength conversion of at least a part of an incident light to output an emitting light having a different wavelength from that of the incident light. The wavelength conversion unit has sheet structure comprising a phosphor which absorbs at least a part of the incident light to emit an emitting light having a different wavelength from that of the incident light, and a resin for holing the phosphor, wherein at least a part of the sheet structure has total light transmittance of 30% or more and 70% or less.

Description

波長變換構件及其製造方法,含有該波長變換構件之發光裝置及照明器具,暨樹脂組成物 Wavelength conversion member and method of manufacturing the same, the light-emitting device and the lighting fixture including the wavelength conversion member, and a resin composition

本發明尤其係關於一種含有螢光體與樹脂且應用於發光裝置或照明器具之波長變換構件及其製造方法、以及含有該螢光體與該樹脂之樹脂組成物。 More particularly, the present invention relates to a wavelength conversion member containing a phosphor and a resin and applied to a light-emitting device or a lighting fixture, a method for producing the same, and a resin composition containing the phosphor and the resin.

使用半導體發光元件之發光裝置(以下亦簡稱為LED(Light Emitting Diode,發光二極體)發光裝置)作為節能發光裝置,其存在感提昇。LED發光裝置包含半導體發光元件,並且包含藉由半導體發光元件所發出之光而激發從而放出不同波長之光的螢光體。 A light-emitting device using a semiconductor light-emitting element (hereinafter also referred to simply as an LED (Light Emitting Diode) light-emitting device) is used as an energy-saving light-emitting device, and its presence is improved. The LED light-emitting device includes a semiconductor light-emitting element and includes a phosphor that is excited by light emitted from the semiconductor light-emitting element to emit light of different wavelengths.

LED發光裝置中所包含之螢光體係例如使螢光體分散於樹脂中而成之漿料成形,作為波長變換構件而包含於LED發光裝置中(例如,參照專利文獻1及2)。 The fluorescent system included in the LED light-emitting device is formed by, for example, a slurry in which a phosphor is dispersed in a resin, and is included in the LED light-emitting device as a wavelength conversion member (see, for example, Patent Documents 1 and 2).

作為LED發光裝置,一般要求更亮者,即要求較高之全光束,為了自LED發光裝置出射更多之光束,於構成波長變換構件之樹脂中使用透光性材料。例如,於專利文獻2中例示有聚矽氧樹脂,此外,有時亦使用環氧樹脂或陶瓷、玻璃等(例如,參照專利文獻3及4)。 As the LED light-emitting device, it is generally required to be brighter, that is, a higher total beam is required, and in order to emit more light beams from the LED light-emitting device, a light-transmitting material is used for the resin constituting the wavelength conversion member. For example, a polyoxyxylene resin is exemplified in Patent Document 2, and an epoxy resin, ceramics, glass, or the like is also used (for example, refer to Patent Documents 3 and 4).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2007-95770號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-95770

[專利文獻2]日本專利特開2011-159813號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2011-159813

[專利文獻3]日本專利特開2012-9470號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2012-9470

[專利文獻4]日本專利特開2008-21868號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2008-21868

如上所述,LED發光裝置中要求較高之全光束。又,於白色LED發光裝置中,有放射色溫較高之晝光色之白色者與放射色溫較低之燈泡色之白色者,於放射低色溫之白光之白色LED發光裝置中,尤其有全光束容易降低之問題。 As mentioned above, a higher total beam is required in LED lighting devices. Further, in the white LED light-emitting device, there is a white color of a fluorescent color having a high radiation color temperature and a white color of a light bulb having a low radiation color temperature, and a white light emitting device of a white light emitting a low color temperature, particularly a full beam. Easy to reduce the problem.

本發明係解決上述問題者,提供一種可構成如下波長變換構件之成形體,該波長變換構件尤其於低色溫之白色LED發光裝置中亦可確保充分之光束。 The present invention has been made in view of the above problems, and provides a molded body which can constitute a wavelength conversion member which can secure a sufficient light beam particularly in a white LED light-emitting device of low color temperature.

本發明者等人為解決上述問題而反覆研究,發現藉由將可構成波長變換構件之成形體之全光線透過率設為特定之範圍,自發光裝置出射之全光束提高,從而完成本發明。 In order to solve the above problems, the inventors of the present invention have repeatedly studied and found that the total light beam emitted from the light-emitting device is improved by setting the total light transmittance of the molded body constituting the wavelength conversion member to a specific range, thereby completing the present invention.

本發明之第一實施樣態係一種波長變換構件,其係對入射光之至少一部分進行波長變換而放出與上述入射光不同波長之出射光者,其特徵在於:該波長變換構件具有面狀構造,該面狀構造包含吸收上述入射光之至少一部分而放出與上述入射光不同波長之出射光之螢光體、及保持該螢光體之樹脂,且該面狀構造之至少一部分之全光線透過率為30%以上且70%以下。又,上述全光線透過率較佳為42%以上且70%以下。 A first embodiment of the present invention is a wavelength conversion member that performs wavelength conversion on at least a portion of incident light to emit an emitted light of a different wavelength from the incident light, wherein the wavelength conversion member has a planar structure. The planar structure includes a phosphor that absorbs at least a portion of the incident light and emits light of a different wavelength from the incident light, and a resin that holds the phosphor, and at least a portion of the planar structure transmits the total light. The rate is 30% or more and 70% or less. Further, the total light transmittance is preferably 42% or more and 70% or less.

上述波長變換構件之厚度較佳為0.3 mm以上且5.0 mm以下。 The thickness of the wavelength conversion member is preferably 0.3 mm or more and 5.0 mm or less.

又,上述波長變換構件中所包含之上述螢光體之含量較佳為15重量%以下,該螢光體之平均粒徑較佳為10 μm以上。 Further, the content of the phosphor contained in the wavelength conversion member is preferably 15% by weight or less, and the average particle diameter of the phosphor is preferably 10 μm or more.

進而,上述波長變換構件較佳為進而含有透過率調整劑。 Further, it is preferable that the wavelength conversion member further contains a transmittance adjusting agent.

又,上述樹脂較佳為結晶性樹脂或非晶性樹脂,該非晶 性樹脂較佳為熱塑性樹脂,進而,上述樹脂亦可為合金。 Further, the resin is preferably a crystalline resin or an amorphous resin, and the amorphous The resin is preferably a thermoplastic resin, and the resin may be an alloy.

進而,上述波長變換構件較佳為可於不具有保持構件之情況下以單體保持其形態,又,較佳為特徵在於藉由射出成形而成形。 Further, it is preferable that the wavelength conversion member is formed to be held by a single body without a holding member, and is preferably formed by injection molding.

本發明之第二實施樣態係一種波長變換構件之製造方法,其係製造上述之波長變換構件之方法,其特徵在於:包括混合樹脂與螢光體之步驟、及使藉由該步驟而獲得之混合物成形之步驟,並於惰性氣體環境下進行該混合步驟及/或該成形步驟。 A second embodiment of the present invention is a method for fabricating a wavelength converting member, which is a method for manufacturing the above-described wavelength converting member, comprising: a step of mixing a resin and a phosphor, and obtaining a step by the step The step of forming the mixture and performing the mixing step and/or the forming step under an inert gas atmosphere.

上述波長變換構件之製造方法較佳為於上述混合步驟中進而添加透過率調整劑,又,上述樹脂較佳為結晶性樹脂或非晶性樹脂。 In the method of producing the wavelength conversion member, it is preferable to further add a transmittance adjusting agent in the mixing step, and the resin is preferably a crystalline resin or an amorphous resin.

本發明之第三實施樣態係一種發光裝置,其特徵在於具備上述波長變換構件或藉由上述製造方法而製造之波長變換構件、及半導體發光元件。 A third embodiment of the present invention is a light-emitting device comprising the wavelength conversion member or a wavelength conversion member manufactured by the above-described manufacturing method, and a semiconductor light-emitting device.

上述發光裝置較佳為出射光之色溫為5500 K以下。 Preferably, the light-emitting device has a color temperature of 5500 K or less.

又,上述發光裝置較佳為上述波長變換構件與上述半導體發光元件呈分離,又,較佳為於該波長變換構件與該半導體發光元件之間具備透明樹脂,進而較佳為於上述波長變換構件與上述半導體發光元件之間具有空間。 Further, in the above-described light-emitting device, it is preferable that the wavelength conversion member is separated from the semiconductor light-emitting device, and that it is preferable to provide a transparent resin between the wavelength conversion member and the semiconductor light-emitting device, and further preferably the wavelength conversion member. There is a space between the above semiconductor light emitting elements.

又,上述發光裝置較佳為,具有配線基板,於該配線基板上設置有反射板,反射率為80%以上之部位之面積為該配線基板上之面積之50%以上。 Moreover, it is preferable that the light-emitting device has a wiring board on which a reflecting plate is provided, and an area of a portion having a reflectance of 80% or more is 50% or more of an area on the wiring board.

進而,上述發光裝置較佳為,具有上述配線基板及機殼,於該配線基板及該機殼內壁面上設置有反射板,反射率為80%以上之部位之面積為該機殼內壁面上及該配線基板上之面積之50%以上。 Further, the light-emitting device preferably includes the wiring board and the casing, and a reflector is provided on the wiring board and the inner wall surface of the casing, and an area having a reflectance of 80% or more is an inner wall surface of the casing. And 50% or more of the area on the wiring board.

本發明之第四實施樣態係一種LED照明器具,其特徵在於具有上述之發光裝置。 A fourth embodiment of the present invention is an LED lighting fixture characterized by having the above-described light-emitting device.

本發明之第五實施樣態係一種樹脂組成物,其係含有螢光體及樹脂者,其特徵在於:於使該樹脂組成物成形為具有面狀構造之成形體時之該面狀構造之至少一部分的全光線透過率為30%以上且 70%以下。 According to a fifth aspect of the present invention, there is provided a resin composition comprising a phosphor and a resin, wherein the resin composition is formed into a planar structure having a planar structure. At least a portion of the total light transmittance is 30% or more 70% or less.

根據本發明之第一實施樣態,可使自發光裝置出射之全光束提高。尤其,於出射低色溫之白光之白色LED發光裝置之情形時,全光束容易降低,本發明之第一實施樣態之波長變換構件係於應用於出射低色溫之白光之白色LED發光裝置之情形時,亦可抑制全光束之降低。又,與先前存在之出射相同程度之全光束之發光裝置相比,可藉由將全光線透過率調整為特定之範圍,而減少必需之螢光體量。波長變換構件之全光線透過率例如可藉由樹脂種類之選擇、樹脂之合金化、複數種樹脂之不均質混合、波長變換構件之厚度、波長變換構件之表面處理、透過率調整劑之添加等而進行調整。因此,於出射低色溫之白光之白色LED發光裝置之情形時,亦可抑制全光束之降低,並且可減少所使用之螢光體量。 According to the first embodiment of the present invention, the total light beam emitted from the light-emitting device can be increased. In particular, in the case of a white LED light-emitting device that emits white light of a low color temperature, the total light beam is easily lowered, and the wavelength conversion member of the first embodiment of the present invention is applied to a white LED light-emitting device that emits white light of a low color temperature. At the same time, the reduction of the total beam can also be suppressed. Further, the amount of phosphor required can be reduced by adjusting the total light transmittance to a specific range as compared with a conventionally used full-beam light-emitting device. The total light transmittance of the wavelength conversion member can be selected, for example, by the type of the resin, the alloying of the resin, the heterogeneous mixing of the plurality of resins, the thickness of the wavelength converting member, the surface treatment of the wavelength converting member, the addition of the transmittance adjusting agent, and the like. And make adjustments. Therefore, in the case of a white LED light-emitting device that emits white light of a low color temperature, the reduction of the total light beam can be suppressed, and the amount of the phosphor used can be reduced.

又,根據本發明之第二實施樣態,可製造上述波長變換構件。 Further, according to the second embodiment of the present invention, the wavelength conversion member can be manufactured.

進而,本發明之第三實施樣態係使用半導體發光元件及上述第一或第二實施樣態之波長變換構件之發光裝置,第四實施樣態係具備第三實施樣態之發光裝置之照明器具。 Further, a third embodiment of the present invention is a light-emitting device using a semiconductor light-emitting device and the wavelength conversion member of the first or second embodiment, and the fourth embodiment is provided with illumination of the illumination device of the third embodiment. appliance.

進而,根據本發明之第五實施樣態,可提供一種能夠製造可調節全光線透過率之波長變換構件之樹脂組成物。 Further, according to the fifth embodiment of the present invention, it is possible to provide a resin composition capable of producing a wavelength converting member which can adjust the total light transmittance.

1‧‧‧藍色半導體發光元件 1‧‧‧Blue semiconductor light-emitting elements

2‧‧‧配線基板 2‧‧‧Wiring substrate

2a‧‧‧晶片安裝面 2a‧‧‧ wafer mounting surface

3‧‧‧波長變換構件 3‧‧‧wavelength conversion components

4‧‧‧機殼 4‧‧‧Shell

10‧‧‧發光裝置 10‧‧‧Lighting device

圖1係表示本發明之實施樣態之半導體發光裝置之構成例的模式圖。 Fig. 1 is a schematic view showing a configuration example of a semiconductor light-emitting device according to an embodiment of the present invention.

圖2係表示本發明之實施樣態之半導體發光裝置之構成例的模式圖。 Fig. 2 is a schematic view showing a configuration example of a semiconductor light-emitting device according to an embodiment of the present invention.

圖3係表示實施例1~10及比較例1~2中之全光線透過率與Lumen比之關係之圖表。 Fig. 3 is a graph showing the relationship between the total light transmittance and the Lumen ratio in Examples 1 to 10 and Comparative Examples 1 and 2.

<1-1.波長變換構件> <1-1. Wavelength conversion member>

本發明之第一實施樣態係關於一種波長變換構件,其係對入射光之至少一部分進行波長變換而放出與上述入射光不同波長之出射光者,其特徵在於:該波長變換構件具有面狀構造,該面狀構造包含吸收上述入射光之至少一部分而放出與上述入射光不同波長之出射光之螢光體、及保持該螢光體之樹脂,且該面狀構造之至少一部分之全光線透過率為30%以上且70%以下。 A first embodiment of the present invention relates to a wavelength conversion member that performs wavelength conversion on at least a portion of incident light to emit an emitted light of a different wavelength from the incident light, wherein the wavelength conversion member has a planar shape. a planar structure comprising a phosphor that absorbs at least a portion of the incident light and emits light having a different wavelength from the incident light, and a resin that holds the phosphor, and at least a portion of the planar structure The transmittance is 30% or more and 70% or less.

所謂全光線透過率,係指全透過光束相對於試片之平行入射光束之比例。全光線透過率可依據JIS K7361進行測定。由於含有螢光體,故而成為著色之透明性較低之波長變換構件,因此必需利用入口開口為20 mmΦ、使用鹵素燈作為光源之裝置進行測定。波長變換構件之全光線透過率之調整可藉由例如下述之螢光體之使用量、選擇之樹脂之種類、樹脂之合金化、複數種樹脂之不均質混合、波長變換構件之厚度、波長變換構件之表面處理等而進行,又,可藉由含有透過率調整劑而進行。 The term "full light transmittance" refers to the ratio of the total transmitted light beam to the parallel incident beam of the test piece. The total light transmittance can be measured in accordance with JIS K7361. Since the phosphor is contained, the wavelength conversion member having low transparency is colored. Therefore, it is necessary to measure the device using a halogen lamp as a light source with an inlet opening of 20 mmφ. The total light transmittance of the wavelength conversion member can be adjusted by, for example, the amount of the phosphor used, the type of the resin selected, the alloying of the resin, the heterogeneous mixing of the plurality of resins, the thickness of the wavelength converting member, and the wavelength. The surface treatment of the conversion member or the like is performed, and it can be carried out by including a transmittance adjusting agent.

一般認為,於LED發光裝置中,為了使全光束提高,必需使自作為發光源之半導體發光元件放出之光大量地透過含有螢光體之波長變換構件。因此,波長變換構件係使用聚矽氧或環氧等透過性較高之材料。 In the LED light-emitting device, in order to increase the total light beam, it is necessary to transmit a large amount of light emitted from the semiconductor light-emitting element as the light-emitting source to the wavelength conversion member including the phosphor. Therefore, the wavelength conversion member is made of a material having high permeability such as polyfluorene oxide or epoxy.

然而,本發明者等人經過研究後發現,於波長變換構件之全光線透過率過高之情形時,自發光裝置出射之光之全光束反而降低。繼而,進而推進研究後想到,藉由使用全光線透過率在不過高之範圍、具體為全光線透過率為30%以上且70%以下之範圍的波長變換構件,發光裝置可達成較高之全光束。而且,即便為出射全光束容易降低之低色溫之白光之發光裝置,亦可達成較高之全光束。 However, the inventors of the present invention have found that when the total light transmittance of the wavelength converting member is too high, the total light beam of the light emitted from the light-emitting device is instead lowered. Then, after further research, it is thought that by using a wavelength conversion member having a total light transmittance in a range that is not too high, specifically, a total light transmittance of 30% or more and 70% or less, the light-emitting device can achieve a higher total. beam. Further, even in the case of a light-emitting device that emits white light of a low color temperature in which the full beam is easily lowered, a high total beam can be achieved.

此處,如上所述,本發明之波長變換構件具有包含螢光體與保持該螢光體之樹脂之面狀構造。所謂面狀構造,意指發光裝置中成為發光面之部分,例如於波長變換構件設於發光裝置時,並非指與自其端部等可見之其他構件之結合部、接合部、嚙合部,而是指位於波長變換構件中央附近之主要接受激發光而可向外部出射光之部 位。 Here, as described above, the wavelength conversion member of the present invention has a planar structure including a phosphor and a resin that holds the phosphor. The planar structure means a portion which becomes a light-emitting surface in the light-emitting device. For example, when the wavelength conversion member is provided in the light-emitting device, it does not mean a joint portion, a joint portion, or a meshing portion with other members visible from the end portion or the like. It is a portion that is mainly located near the center of the wavelength conversion member and that receives excitation light and emits light to the outside. Bit.

若使用圖1進行說明,則圖1中之波長變換構件3中之單點鏈線部均為面狀構造部分。另一方面,波長變換構件3中之配線基板2附近部分並非面狀構造。 As will be described with reference to Fig. 1, the single-dot chain line portions in the wavelength conversion member 3 in Fig. 1 are all planar structure portions. On the other hand, the portion in the vicinity of the wiring substrate 2 in the wavelength conversion member 3 is not a planar structure.

於本實施形態中,只要波長變換構件之面狀構造之至少一部分滿足上述全光線透過率之範圍即可,較佳為主要部分滿足上述全光線透過率之範圍,更佳為波長變換構件之面狀構造之全部滿足上述全光線透過率之範圍。又,上述全光線透過率較佳為42%以上,更佳為45%以上,進而較佳為47%以上。另一方面,較佳為60%以下,更佳為55%以下。 In the present embodiment, at least a part of the planar structure of the wavelength conversion member satisfies the range of the total light transmittance, and it is preferable that the main portion satisfies the range of the total light transmittance, and more preferably the surface of the wavelength conversion member. All of the structures satisfy the above range of total light transmittance. Further, the total light transmittance is preferably 42% or more, more preferably 45% or more, still more preferably 47% or more. On the other hand, it is preferably 60% or less, more preferably 55% or less.

此處,所謂該面狀構造之主要部分,意指組入半導體發光裝置中時放出光之上述面狀構造內成為主要之光放出部分。 Here, the main part of the planar structure means that the light-emitting portion is the main light-emitting portion in the above-described planar structure in which light is emitted when incorporated in the semiconductor light-emitting device.

<1-2.螢光體> <1-2. Fluorescent body>

本實施樣態之波長變換構件包含螢光體。包含之螢光體之種類係適當選擇,但較佳為無機螢光體,關於紅色(橙色)、綠色、藍色、黃色螢光體,可列舉下述者作為代表之螢光體。 The wavelength conversion member of this embodiment includes a phosphor. The type of the phosphor to be contained is appropriately selected, but is preferably an inorganic phosphor. Examples of the red (orange), green, blue, and yellow phosphors include the following representative phosphors.

此時,螢光體可單獨使用1種,亦可組合2種以上。藉由使用2種以上之螢光體,可使色溫降低或使顯色性提高。 In this case, the phosphors may be used alone or in combination of two or more. By using two or more kinds of phosphors, the color temperature can be lowered or the color rendering property can be improved.

又,螢光體亦可藉由第三成分而實施表面處理。作為表面處理劑,並無特別限定,例如可使用與下述之透過率調整劑之表面處理劑同樣者。再者,本實施形態之螢光體可使用預先以表面處理劑進行處理者,亦可使用於混練時將表面處理劑直接添加於混練機中而於混練機內進行表面處理者。 Further, the phosphor may be subjected to surface treatment by the third component. The surface treatment agent is not particularly limited, and for example, the same as the surface treatment agent of the transmittance adjusting agent described below can be used. Further, the phosphor of the present embodiment can be used as a surface treatment agent in advance, or a surface treatment agent can be directly added to a kneading machine during kneading to perform surface treatment in a kneading machine.

<1-2-1.紅色螢光體> <1-2-1. Red phosphor>

紅色螢光體之發光峰波長適合在如下之波長範圍:通常為565 nm以上,較佳為575 nm以上,更佳為580 nm以上,又,通常為780 nm以下,較佳為700 nm以下,更佳為680 nm以下。 The luminescence peak wavelength of the red phosphor is suitable for the following wavelength range: usually 565 nm or more, preferably 575 nm or more, more preferably 580 nm or more, and usually 780 nm or less, preferably 700 nm or less. More preferably below 680 nm.

紅色螢光體之發光峰之半值寬通常為1 nm~120 nm之範圍。又,外部量子效率通常為60%以上,較佳為70%以上,重量中 值徑通常為0.1 μm以上,較佳為1.0 μm以上,進而較佳為5.0 μm以上,通常為40 μm以下,較佳為30 μm以下,進而較佳為20 μm以下。 The half-value width of the luminescence peak of the red phosphor is usually in the range of 1 nm to 120 nm. Moreover, the external quantum efficiency is usually 60% or more, preferably 70% or more, in weight. The value is usually 0.1 μm or more, preferably 1.0 μm or more, more preferably 5.0 μm or more, and usually 40 μm or less, preferably 30 μm or less, and further preferably 20 μm or less.

作為此種紅色螢光體,例如亦可使用日本專利特開2006-008721號公報中所記載之CaAlSiN3:Eu(本案說明書中,有時亦記載為「CASN」)、日本專利特開2008-7751號公報中所記載之(Sr,Ca)AlSiN3:Eu、日本專利特開2007-231245號公報中所記載之Ca1-xAl1-xSi1+xN3-xOx:Eu等Eu賦活氧化物、氮化物或氮氧化物螢光體等、或日本專利特開2008-38081號公報(Sr,Ba,Ca)3SiO5:Eu(以下有時簡稱為「SBS螢光體」)。 As such a red phosphor, for example, CaAlSiN 3 :Eu described in Japanese Laid-Open Patent Publication No. 2006-008721 (hereinafter, referred to as "CASN" in the present specification), Japanese Patent Laid-Open No. 2008- (Sr, Ca)AlSiN 3 :Eu, and Ca 1-x Al 1-x Si 1+x N 3-x O x :Eu described in Japanese Laid-Open Patent Publication No. 2007-231245 Ep-activated oxide, nitride or oxynitride phosphor, etc., or Japanese Patent Laid-Open Publication No. 2008-38081 (Sr, Ba, Ca) 3 SiO 5 :Eu (hereinafter sometimes referred to simply as "SBS phosphor"").

此外,作為紅色螢光體,亦可使用(Mg,Ca,Sr,Ba)2Si5N8:Eu等Eu賦活鹼土類氮化矽系螢光體;(La,Y)2O2S:Eu等Eu賦活酸硫化物螢光體;(Y,La,Gd,Lu)2O2S:Eu等Eu賦活稀土類氧硫族元素化物系螢光體;Y(V,P)O4:Eu、Y2O3:Eu等Eu賦活氧化物螢光體;(Ba,Mg)2SiO4:Eu,Mn、(Ba,Sr,Ca,Mg)2SiO4:Eu,Mn等Eu,Mn賦活矽酸鹽螢光體;LiW2O8:Eu、LiW2O8:Eu,Sm、Eu2W2O9、Eu2W2O9:Nb、Eu2W2O9:Sm等Eu賦活鎢酸鹽螢光體;(Ca,Sr)S:Eu等Eu賦活硫化物螢光體;YAlO3:Eu等Eu賦活鋁酸鹽螢光體;Ca2Y8(SiO4)6O2:Eu、LiY9(SiO4)6O2:Eu等Eu賦活矽酸鹽螢光體;(Y,Gd)3Al5O12:Ce、(Tb,Gd)3Al5O12:Ce等Ce賦活鋁酸鹽螢光體;(Mg,Ca,Sr,Ba)2Si5(N,O)8:Eu、(Mg,Ca,Sr,Ba)Si(N,O)2:Eu、(Mg,Ca,Sr,Ba)AlSi(N,O)3:Eu等Eu賦活氧化物、氮化物或氮氧化物螢光體;(Sr,Ca,Ba,Mg)10(PO4)6Cl2:Eu,Mn等Eu,Mn賦活鹵磷酸鹽螢光體;Ba3MgSi2O8:Eu,Mn、(Ba,Sr,Ca,Mg)3(Zn,Mg)Si2O8:Eu,Mn等Eu,Mn賦活矽酸鹽螢光體;3.5MgO-0.5MgF2-GeO2:Mn等Mn賦活鍺酸鹽螢光體;Eu賦活α賽隆等Eu賦活氮氧化物螢光體;(Gd,Y,Lu,La)2O3:Eu,Bi等Eu,Bi賦活氧化物螢光體;(Gd,Y,Lu,La)2O2S:Eu,Bi等Eu,Bi賦活酸硫化物螢光體;(Gd,Y,Lu,La)VO4:Eu,Bi等Eu,Bi賦活釩酸鹽螢光體;SrY2S4:Eu,Ce等Eu,Ce賦活硫化物螢光體;CaLa2S4:Ce等Ce賦活硫化物螢光體;(Ba,Sr,Ca)MgP2O7:Eu,Mn、(Sr,Ca,Ba,Mg,Zn)2P2O7:Eu,Mn等Eu,Mn 賦活磷酸鹽螢光體;(Y,Lu)2WO6:Eu,Mo等Eu,Mo賦活鎢酸鹽螢光體;(Ba,Sr,Ca)xSiyNz:Eu,Ce(其中,x、y、z表示1以上之整數)等Eu,Ce賦活氮化物螢光體;(Ca,Sr,Ba,Mg)10(PO4)6(F,Cl,Br,OH):Eu,Mn等Eu,Mn賦活鹵磷酸鹽螢光體;((Y,Lu,Gd,Tb)1-x-yScxCey)2(Ca,Mg)1-r(Mg,Zn)2+rSiz-qGeqO12+δ等Ce賦活矽酸鹽螢光體等。 Further, as the red phosphor, an alkaline earth-based lanthanum nitride-based phosphor such as (Mg, Ca, Sr, Ba) 2 Si 5 N 8 :Eu or the like may be used; (La, Y) 2 O 2 S: Eu, etc. Eu-activated acid sulfide phosphor; (Y, La, Gd, Lu) 2 O 2 S: Eu and other Eu-activated rare earth oxychalcogenide-based phosphor; Y(V, P)O 4 : Eu, Y 2 O 3 : Eu, etc., Eu-activated oxide phosphor; (Ba, Mg) 2 SiO 4 : Eu, Mn, (Ba, Sr, Ca, Mg) 2 SiO 4 : Eu, Mn, etc. Eu, Mn Revitalizing citrate phosphor; LiW 2 O 8 :Eu, LiW 2 O 8 :Eu,Sm,Eu 2 W 2 O 9 ,Eu 2 W 2 O 9 :Nb,Eu 2 W 2 O 9 :Sm, etc. Eu Revitalizing the tungstate phosphor; (Ca, Sr) S: Eu and other Eu-activated sulfide phosphor; YAlO 3 : Eu and other Eu-activated aluminate phosphor; Ca 2 Y 8 (SiO 4 ) 6 O 2 : Eu, LiY 9 (SiO 4 ) 6 O 2 : Eu, etc. Eu-activated phthalate phosphor; (Y, Gd) 3 Al 5 O 12 : Ce, (Tb, Gd) 3 Al 5 O 12 : Ce, etc. Ce activating aluminate phosphor; (Mg, Ca, Sr, Ba) 2 Si 5 (N, O) 8 : Eu, (Mg, Ca, Sr, Ba) Si(N,O) 2 :Eu, ( Mg, Ca, Sr, Ba) AlSi(N,O) 3 :Eu, etc. Eu-activated oxide, nitride or oxynitride phosphor; (Sr, Ca, Ba, Mg) 10 (PO 4 ) 6 Cl 2 :Eu, Mn, etc. Eu , Mn activating halophosphate phosphor; Ba 3 MgSi 2 O 8 :Eu, Mn, (Ba, Sr, Ca, Mg) 3 (Zn,Mg)Si 2 O 8 :Eu, Mn, etc. Eu, Mn activating 矽Acid phosphor; 3.5MgO-0.5MgF 2 -GeO 2 : Mn and other Mn-activated citrate phosphor; Eu revitalizes Eu-activated oxynitride phosphor such as α-Sallon; (Gd, Y, Lu, La 2 O 3 : Eu, Bi, etc. Eu, Bi-activated oxide phosphor; (Gd, Y, Lu, La) 2 O 2 S: Eu, Bi, etc. Eu, Bi-activated acid sulfide phosphor; (Gd , Y, Lu, La) VO 4 : Eu, Bi, etc. Eu, Bi-activated vanadate phosphor; SrY 2 S 4 : Eu, Ce, etc. Eu, Ce-activated sulfide phosphor; CaLa 2 S 4 : Ce Et enactivates sulfide phosphor; (Ba, Sr, Ca) MgP 2 O 7 : Eu, Mn, (Sr, Ca, Ba, Mg, Zn) 2 P 2 O 7 : Eu, Mn, etc. Eu, Mn Phosphate phosphor; (Y, Lu) 2 WO 6 : Eu, Mo, etc. Eu, Mo-activated tungstate phosphor; (Ba, Sr, Ca) x Si y N z : Eu, Ce (where x , y, z represents an integer of 1 or more, etc. Eu, Ce gives a living nitride phosphor; (Ca, Sr, Ba, Mg) 10 (PO 4 ) 6 (F, Cl, Br, OH): Eu, Mn, etc. Eu, Mn activating halophosphate phosphor; ((Y, Lu, Gd, Tb) 1-xy Sc x Ce y ) 2 (Ca, Mg) 1-r (Mg, Zn) 2+r Si zq Ge q Ce such as O 12+δ is activated by a citrate phosphor or the like.

此外,為了提高來自半導體發光裝置之放射光之顯色性,或提高發光裝置之發光效率,作為紅色螢光體,可單獨使用紅色發光光譜之半值寬為20 nm以下之紅色螢光體(以下有時稱為「窄頻帶紅色螢光體」),或可與其他紅色螢光體、尤其紅色發光光譜之半值寬為50 nm以上之紅色螢光體混合而使用。作為此種紅色螢光體,可列舉由A2+xMyMnzFn(A為Na及/或K;M為Si及Al;-1≦x≦1且0.9≦y+z≦1.1且0.001≦z≦0.4且5≦n≦7)所表示之KSF、KSNAF及KSF與KSNAF之固溶體、由(k-x)MgO-xAF2-GeO2:yMn4+(其中,式中k為2.8~5之實數,x為0.1~0.7之實數,y為0.005~0.015之實數,A為鈣(Ca)、鍶(Sr)、鋇(Ba)、鋅(Zn)或其等之混合物)之化學式所表示之3.5MgO-0.5MgF2-GeO2:Mn等錳活性之深紅色(600 nm~670 nm)鍺酸鹽螢光體、由(La1-x-y,Eux,Lny)2O2S(x及y分別表示滿足0.02≦x≦0.50及0≦y≦0.50之數,Ln表示Y、Gd、Lu、Sc、Sm及Er中之至少1種3價稀土類元素)之化學式所表示之LOS螢光體等。 Further, in order to increase the color rendering property of the emitted light from the semiconductor light-emitting device or to improve the light-emitting efficiency of the light-emitting device, as the red phosphor, a red phosphor having a half-value width of 20 nm or less in the red light-emitting spectrum may be used alone ( Hereinafter, it may be referred to as "narrow-band red phosphor" or may be mixed with other red phosphors, particularly red phosphors having a half-value width of 50 nm or more. As such a red phosphor, A 2+ x M y Mn z F n (A is Na and/or K; M is Si and Al; -1≦x≦1 and 0.9≦y+z≦1.1) And KSF, KSNAF and KSF and KSNAF solid solution represented by 0.001≦z≦0.4 and 5≦n≦7), from (kx)MgO-xAF 2 -GeO 2 :yMn 4+ (where k is The real number of 2.8~5, x is a real number of 0.1~0.7, y is a real number of 0.005~0.015, and A is a mixture of calcium (Ca), strontium (Sr), barium (Ba), zinc (Zn) or the like) A manganese red active (600 nm to 670 nm) citrate phosphor represented by the chemical formula of 3.5MgO-0.5MgF 2 -GeO 2 :Mn, derived from (La 1-xy ,Eu x ,Ln y ) 2 O 2 S (x and y respectively represent the number of 0.02≦x≦0.50 and 0≦y≦0.50, and Ln represents the chemical formula of at least one trivalent rare earth element of Y, Gd, Lu, Sc, Sm and Er) Indicates the LOS phosphor and so on.

又,亦可使用國際公開WO2008-096300號公報中所記載之SrAlSi4N7或美國專利7524437號公報中所記載之Sr2Al2Si9O2N14:Eu。 Further, SrAlSi 4 N 7 described in International Publication WO 2008-096300 or Sr 2 Al 2 Si 9 O 2 N 14 :Eu described in U.S. Patent No. 7,524,437 may be used.

以上之中,作為紅色螢光體,較佳為CASN螢光體、SCASN螢光體、CASON螢光體、SBS螢光體。 Among the above, as the red phosphor, a CASN phosphor, a SCASN phosphor, a CASON phosphor, and an SBS phosphor are preferable.

以上例示之紅色螢光體可僅使用任一種,亦可以任意之組合及比率併用兩種以上。 The red phosphors exemplified above may be used singly or in combination of two or more kinds in any combination and in any ratio.

<1-2-2.綠色螢光體> <1-2-2. Green phosphor>

綠色螢光體之發光峰波長通常大於500 nm,其中較佳為510 nm以上,進而較佳為515 nm以上,又,通常為550 nm以下,其中較佳為 540 nm以下,進而較佳為535 nm以下之範圍。該發光峰波長若過短則有帶藍色之傾向,另一方面,若過長則有帶黃色之傾向,均可能降低作為綠色光之特性。 The wavelength of the luminescence peak of the green phosphor is usually greater than 500 nm, preferably 510 nm or more, more preferably 515 nm or more, and usually 550 nm or less, of which It is 540 nm or less, and further preferably in the range of 535 nm or less. If the wavelength of the luminescence peak is too short, the color tends to be bluish. On the other hand, if it is too long, it tends to be yellowish, and the characteristics as green light may be lowered.

綠色螢光體之發光峰之半值寬通常為1 nm~80 nm之範圍。又,外部量子效率通常為60%以上,較佳為70%以上,重量中值徑通常為0.1 μm以上,較佳為1.0 μm以上,進而較佳為5.0 μm以上,通常為40 μm以下,較佳為30 μm以下,進而較佳為20 μm以下。 The half-value width of the luminescence peak of the green phosphor is usually in the range of 1 nm to 80 nm. Further, the external quantum efficiency is usually 60% or more, preferably 70% or more, and the weight median diameter is usually 0.1 μm or more, preferably 1.0 μm or more, more preferably 5.0 μm or more, and usually 40 μm or less. It is preferably 30 μm or less, and more preferably 20 μm or less.

作為此種綠色螢光體,例如可列舉國際公開WO2007-091687號公報中所記載之由(Ba,Ca,Sr,Mg)2SiO4:Eu(以下有時簡稱為「BSS螢光體」)所表示之Eu賦活鹼土類矽酸鹽系螢光體等。 For example, (Ba, Ca, Sr, Mg) 2 SiO 4 :Eu (hereinafter sometimes abbreviated as "BSS phosphor") as described in International Publication WO2007-091687 The Eu is represented by an alkaline earth silicate-based phosphor or the like.

又,此外,作為綠色螢光體,例如亦可使用專利第3921545號公報中所記載之Si6-zAlzN8-zOz:Eu(其中,0<z≦4.2;以下有時簡稱為「β-SiAlON螢光體」)等Eu賦活氮氧化物螢光體、國際公開WO2007-088966號公報中所記載之M3Si6O12N2:Eu(其中,M表示鹼土類金屬元素;以下有時簡稱為「BSON螢光體」)等Eu賦活氮氧化物螢光體、日本專利特開2008-274254號公報中所記載之BaMgAl10O17:Eu,Mn賦活鋁酸鹽螢光體(以下有時簡稱為「GBAM螢光體」)。 Further, as the green phosphor, for example, Si 6-z Al z N 8-z O z :Eu described in Japanese Patent No. 3921545 (where 0<z≦4.2; An active oxynitride phosphor such as "β-SiAlON phosphor"), and M 3 Si 6 O 12 N 2 :Eu described in WO2007-088966 (where M represents an alkaline earth metal element) In the following, an Au-activated oxynitride phosphor such as "BSON phosphor" is used, and BaMgAl 10 O 17 :Eu, Mn, which is described in JP-A-2008-274254, activates aluminate fluorescence. Body (hereinafter sometimes referred to as "GBAM phosphor").

作為其他綠色螢光體,亦可使用(Mg,Ca,Sr,Ba)Si2O2N2:Eu等Eu賦活鹼土類氮氧化矽系螢光體;Sr4Al14O25:Eu、(Ba,Sr,Ca)Al2O4:Eu等Eu賦活鋁酸鹽螢光體;(Sr,Ba)Al2Si2O8:Eu、(Ba,Mg)2SiO4:Eu、(Ba,Sr,Ca)2(Mg,Zn)Si2O7:Eu、(Ba,Ca,Sr,Mg)9(Sc,Y,Lu,Gd)2(Si,Ge)6O24:Eu等Eu賦活矽酸鹽螢光體;Y2SiO5:Ce,Tb等Ce,Tb賦活矽酸鹽螢光體;Sr2P2O7-Sr2B2O5:Eu等Eu賦活硼酸磷酸鹽螢光體;Sr2Si3O8-2SrCl2:Eu等Eu賦活鹵矽酸鹽螢光體;Zn2SiO4:Mn等Mn賦活矽酸鹽螢光體;CeMgAl11O19:Tb、Y3Al5O12:Tb等Tb賦活鋁酸鹽螢光體;Ca2Y8(SiO4)6O2:Tb、La3Ga5SiO14:Tb等Tb賦活矽酸鹽螢光體;(Sr,Ba,Ca)Ga2S4:Eu,Tb,Sm等Eu,Tb,Sm賦活硫代五倍子酸鹽螢光體;Y3(Al,Ga)5O12:Ce、(Y,Ga,Tb,La,Sm,Pr,Lu)3(Al,Ga)5O12:Ce等Ce賦活鋁酸鹽螢光體;Ca3Sc2Si3O12:Ce、Ca3(Sc,Mg,Na,Li)2Si3O12:Ce等Ce 賦活矽酸鹽螢光體;CaSc2O4:Ce等Ce賦活氧化物螢光體;Eu賦活β-賽隆等Eu賦活氮氧化物螢光體、SrAl2O4:Eu等Eu賦活鋁酸鹽螢光體;(La,Gd,Y)2O2S:Tb等Tb賦活酸硫化物螢光體;LaPO4:Ce,Tb等Ce,Tb賦活磷酸鹽螢光體;ZnS:Cu,Al、ZnS:Cu,Au,Al等硫化物螢光體;(Y,Ga,Lu,Sc,La)BO3:Ce,Tb、Na2Gd2B2O7:Ce,Tb、(Ba,Sr)2(Ca,Mg,Zn)B2O6:K,Ce,Tb等Ce,Tb賦活硼酸鹽螢光體;Ca8Mg(SiO4)4Cl2:Eu,Mn等Eu,Mn賦活鹵矽酸鹽螢光體;(Sr,Ca,Ba)(Al,Ga,In)2S4:Eu等Eu賦活硫代鋁酸鹽螢光體或硫代五倍子酸鹽螢光體;(Ca,Sr)8(Mg,Zn)(SiO4)4Cl2:Eu,Mn等Eu,Mn賦活鹵矽酸鹽螢光體;M3Si6O9N4:Eu等Eu賦活氮氧化物螢光體等。 As other green phosphors, Eu (Og, Ca, Sr, Ba), Si 2 O 2 N 2 :Eu, etc., may be used to activate an alkaline earth oxynitride lanthanide phosphor; Sr 4 Al 14 O 25 :Eu, ( Ba, Sr, Ca) Al 2 O 4 : Eu and other Eu-activated aluminate phosphors; (Sr, Ba) Al 2 Si 2 O 8 : Eu, (Ba, Mg) 2 SiO 4 : Eu, (Ba, Sr,Ca) 2 (Mg,Zn)Si 2 O 7 :Eu,(Ba,Ca,Sr,Mg) 9 (Sc,Y,Lu,Gd) 2 (Si,Ge) 6 O 24 :Eu, etc. Eu Tellurite phosphor; Y 2 SiO 5 :Ce, Tb, etc. Ce, Tb, etc., citrate phosphor; Sr 2 P 2 O 7 -Sr 2 B 2 O 5 :Eu, etc. Eu-activated boric acid phosphate fluorescein Body; Sr 2 Si 3 O 8 -2SrCl 2 : Eu and other Eu-activated halocate phosphor; Zn 2 SiO 4 : Mn and other Mn-activated phthalate phosphor; CeMgAl 11 O 19 : Tb, Y 3 Al 5 O 12 : Tb and other Tb activating aluminate phosphor; Ca 2 Y 8 (SiO 4 ) 6 O 2 : Tb, La 3 Ga 5 SiO 14 : Tb and the like Tb to activate the phthalate phosphor; (Sr, Ba,Ca)Ga 2 S 4 :Eu, Tb,Sm, etc. Eu, Tb, Sm activates thiogallate acid phosphor; Y 3 (Al,Ga) 5 O 12 :Ce, (Y,Ga,Tb, La,Sm,Pr,Lu) 3 (Al,Ga) 5 O 12 :Ce and other Ce activating aluminate phosphor; Ca 3 Sc 2 Si 3 O 12 :Ce, Ca 3 (Sc,Mg,Na,Li ) 2 S i 3 O 12 : Ce, etc., activating a phthalate phosphor; CaSc 2 O 4 :Ce, etc., activating an oxide phosphor; Eu activating an Eu-activated oxynitride phosphor such as β-Sialon, SrAl 2 O 4 : Eu and other Eu activating aluminate phosphor; (La, Gd, Y) 2 O 2 S: Tb and other Tb activating acid sulfide phosphor; LaPO 4 : Ce, Tb, etc. Ce, Tb revitalizing phosphate Light body; ZnS: Cu, Al, ZnS: Cu, Au, Al, etc. sulfide phosphor; (Y, Ga, Lu, Sc, La) BO 3 : Ce, Tb, Na 2 Gd 2 B 2 O 7 : Ce, Tb, (Ba, Sr) 2 (Ca, Mg, Zn) B 2 O 6 : Ke, Ce, Tb, etc. Ce, Tb revitalizes borate phosphor; Ca 8 Mg(SiO 4 ) 4 Cl 2 :Eu , Mn and other Eu, Mn to activate the halosilicate phosphor; (Sr, Ca, Ba) (Al, Ga, In) 2 S 4 : Eu and other Eu-activated thioaluminate phosphor or thio gallate Salt phosphor; (Ca,Sr) 8 (Mg,Zn)(SiO 4 ) 4 Cl 2 :Eu, Mn, etc. Eu, Mn to activate the halosilicate phosphor; M 3 Si 6 O 9 N 4 :Eu Et is activated by an oxynitride phosphor or the like.

又,亦可使用國際公開WO2009-072043號公報中記載之Sr5Al5Si21O2N35:Eu或國際公開WO2007-105631號公報中記載之Sr3Si13Al3N21O2:Eu。 Further, Sr 5 Al 5 Si 21 O 2 N 35 :Eu described in International Publication No. WO2009-072043 or Sr 3 Si 13 Al 3 N 21 O 2 :Eu described in International Publication WO2007-105631 can also be used. .

以上之中,作為綠色螢光體,較佳為BSS螢光體、β-SiAlON螢光體、BSON螢光體。 Among the above, as the green phosphor, a BSS phosphor, a β-SiAlON phosphor, and a BSON phosphor are preferable.

以上例示之綠色螢光體可僅使用任一種,亦可以任意之組合及比率併用兩種以上。 The green phosphors exemplified above may be used singly or in combination of two or more kinds in any combination and in any ratio.

此外,為了提高來自半導體發光裝置之放射光之顯色性,或提高發光裝置之發光效率,可單獨使用綠色發光光譜之半值寬為20 nm以下之綠色螢光體(以下有時稱為「窄頻帶綠色螢光體」)作為綠色螢光體。 Further, in order to increase the color rendering property of the emitted light from the semiconductor light-emitting device or to improve the light-emitting efficiency of the light-emitting device, a green phosphor having a half-value width of 20 nm or less in the green light-emitting spectrum may be used alone (hereinafter sometimes referred to as " A narrow-band green phosphor") is used as a green phosphor.

<1-2-3.藍色螢光體> <1-2-3. Blue phosphor>

藍色螢光體之發光峰波長通常為420 nm以上,較佳為430 nm以上,更佳為440 nm以上,通常未滿500 nm,較佳為490 nm以下,更佳為480 nm以下,進而較佳為470 nm以下,特佳為460 nm以下之波長範圍。 The wavelength of the luminescence peak of the blue phosphor is usually 420 nm or more, preferably 430 nm or more, more preferably 440 nm or more, and usually less than 500 nm, preferably 490 nm or less, more preferably 480 nm or less. It is preferably 470 nm or less, and particularly preferably in the wavelength range of 460 nm or less.

藍色螢光體之發光峰之半值寬通常為10 nm~100 nm之範圍。又,外部量子效率通常為60%以上,較佳為70%以上,重量中值徑通常為0.1 μm以上,較佳為1.0 μm以上,進而較佳為5.0 μm以 上,通常為40 μm以下,較佳為30 μm以下,進而較佳為20 μm以下。 The half-value width of the luminescence peak of the blue phosphor is usually in the range of 10 nm to 100 nm. Further, the external quantum efficiency is usually 60% or more, preferably 70% or more, and the weight median diameter is usually 0.1 μm or more, preferably 1.0 μm or more, and more preferably 5.0 μm. The upper portion is usually 40 μm or less, preferably 30 μm or less, and more preferably 20 μm or less.

作為此種藍色螢光體,例如可列舉由(Ca,Sr,Ba)5(PO4)3Cl:Eu所表示之銪賦活鹵磷酸鈣系螢光體、由(Ca,Sr,Ba)2B5O9Cl:Eu所表示之銪賦活鹼土類氯硼酸鹽系螢光體、由(Sr,Ca,Ba)Al2O4:Eu或(Sr,Ca,Ba)4Al14O25:Eu所表示之銪賦活鹼土類鋁酸鹽系螢光體等。 Examples of such a blue phosphor include an anthracene active halophosphate phosphor represented by (Ca, Sr, Ba) 5 (PO 4 ) 3 Cl: Eu, and (Ca, Sr, Ba). 2 B 5 O 9 Cl: an anthracene-derived alkaline earth chloroborate-based phosphor represented by Eu, from (Sr, Ca, Ba)Al 2 O 4 :Eu or (Sr,Ca,Ba) 4 Al 14 O 25 : An alkali-like aluminate-based phosphor represented by Eu.

又,此外,作為藍色螢光體,亦可使用Sr2P2O7:Sn等Sn賦活磷酸鹽螢光體;Sr4Al14O25:Eu、BaMgAl10O17:Eu、BaAl8O13:Eu等Eu賦活鋁酸鹽螢光體;SrGa2S4:Ce、CaGa2S4:Ce等Ce賦活硫代五倍子酸鹽螢光體;(Ba,Sr,Ca)MgAl10O17:Eu、BaMgAl10O17:Eu,Tb,Sm等Eu,Tb,Sm賦活鋁酸鹽螢光體;(Ba,Sr,Ca)MgAl10O17:Eu,Mn等Eu,Mn賦活鋁酸鹽螢光體;(Sr,Ca,Ba,Mg)10(PO4)6Cl2:Eu、(Ba,Sr,Ca)5(PO4)3(Cl,F,Br,OH):Eu,Mn,Sb等Eu,Tb,Sm賦活鹵磷酸鹽螢光體;BaAl2Si2O8:Eu、(Sr,Ba)3MgSi2O8:Eu等Eu賦活矽酸鹽螢光體;Sr2P2O7:Eu等Eu賦活磷酸鹽螢光體;ZnS:Ag、ZnS:Ag,Al等硫化物螢光體;Y2SiO5:Ce等Ce賦活矽酸鹽螢光體;CaWO4等鎢酸鹽螢光體;(Ba,Sr,Ca)BPO5:Eu,Mn、(Sr,Ca)10(PO4)6-nB2O3:Eu、2SrO-0.84P2O5-0.16B2O3:Eu等Eu,Mn賦活硼酸磷酸鹽螢光體;Sr2Si3O8-2SrCl2:Eu等Eu賦活鹵矽酸鹽螢光體等。 Further, as the blue phosphor, a phosphate phosphor such as Sr 2 P 2 O 7 :Sn may be used to activate the phosphate phosphor; Sr 4 Al 14 O 25 :Eu, BaMgAl 10 O 17 :Eu, BaAl 8 O 13 : Eu and other Eu-activated aluminate phosphor; SrGa 2 S 4 :Ce, CaGa 2 S 4 :Ce, etc. Ce activates the thioglycolate phosphor; (Ba, Sr, Ca) MgAl 10 O 17 : Eu, BaMgAl 10 O 17 :Eu, Tb, Sm, etc. Eu, Tb, Sm activating aluminate phosphor; (Ba, Sr, Ca) MgAl 10 O 17 : Eu, Mn, etc. Eu, Mn activating aluminate fluorite Light body; (Sr, Ca, Ba, Mg) 10 (PO 4 ) 6 Cl 2 : Eu, (Ba, Sr, Ca) 5 (PO 4 ) 3 (Cl, F, Br, OH): Eu, Mn, Eu, Tb, Sm such as Sb activates halophosphate phosphor; BaAl 2 Si 2 O 8 :Eu, (Sr,Ba) 3 MgSi 2 O 8 :Eu, etc. Eu-activated citrate phosphor; Sr 2 P 2 O 7 : Eu and other Eu-activated phosphate phosphor; ZnS: Ag, ZnS: Ag, Al and other sulfide phosphors; Y 2 SiO 5 : Ce and other Ce-activated citrate phosphor; CaWO 4 and other tungstic acid Salt phosphor; (Ba, Sr, Ca) BPO 5 : Eu, Mn, (Sr, Ca) 10 (PO 4 ) 6 -nB 2 O 3 : Eu, 2SrO-0.84P 2 O 5 -0.16B 2 O 3 : Eu, Eu, etc., activates the boric acid phosphate phosphor; Sr 2 Si 3 O 8 -2SrCl 2 :Eu, etc. Halogen halide phosphors, etc.

其中,可較佳地使用(Sr,Ca,Ba)10(PO4)6Cl2:Eu2+、BaMgAl10O17:Eu。又,由(Sr,Ca,Ba)10(PO4)6Cl2:Eu2+所表示之螢光體之中,可較佳地使用由SraBabEux(PO4)cCld(c、d及x係滿足2.7≦c≦3.3、0.9≦d≦1.1、0.3≦x≦1.2之數,x較佳為0.3≦x≦1.0;進而,a及b係滿足a+b=5-x且0.05≦b/(a+b)≦0.6之條件者,b/(a+b)較佳為0.1≦b/(a+b)≦0.6)所表示之螢光體。 Among them, (Sr, Ca, Ba) 10 (PO 4 ) 6 Cl 2 :Eu 2+ and BaMgAl 10 O 17 :Eu can be preferably used. Further, among the phosphors represented by (Sr, Ca, Ba) 10 (PO 4 ) 6 Cl 2 :Eu 2+ , Sr a Ba b Eu x (PO 4 ) c Cl d can be preferably used. (c, d, and x satisfy the number of 2.7≦c≦3.3, 0.9≦d≦1.1, 0.3≦x≦1.2, and x is preferably 0.3≦x≦1.0; further, a and b satisfy a+b=5 For the condition of -x and 0.05 ≦b / (a + b) ≦ 0.6, b / (a + b) is preferably a phosphor represented by 0.1 ≦ b / (a + b) ≦ 0.6).

此外,為了提高來自半導體發光裝置之放射光之顯色性,或提高發光裝置之發光效率,可單獨使用藍色發光光譜之半值寬為20 nm以下之藍色螢光體(以下有時稱為「窄頻帶藍色螢光體」)作為藍色螢光體。 Further, in order to increase the color rendering property of the emitted light from the semiconductor light-emitting device or to improve the light-emitting efficiency of the light-emitting device, a blue phosphor having a half-value width of blue light emission of 20 nm or less may be used alone (hereinafter sometimes referred to as It is a "narrow-band blue phosphor") as a blue phosphor.

<1-2-4.黃色螢光體> <1-2-4. Yellow phosphor>

黃色螢光體之發光峰波長通常為530 nm以上,較佳為540 nm以上,更佳為550 nm以上,通常為620 nm以下,較佳為600 nm以下,更佳為580 nm以下之波長範圍。 The luminescence peak wavelength of the yellow phosphor is usually 530 nm or more, preferably 540 nm or more, more preferably 550 nm or more, and usually 620 nm or less, preferably 600 nm or less, more preferably 580 nm or less. .

黃色螢光體之發光峰之半值寬通常為80 nm~130 nm之範圍。又,外部量子效率通常為60%以上,較佳為70%以上,重量中值徑通常為0.1 μm以上,較佳為1.0 μm以上,進而較佳為5.0 μm以上,通常為40 μm以下,較佳為30 μm以下,進而較佳為20 μm以下。 The half-value width of the luminescence peak of the yellow phosphor is usually in the range of 80 nm to 130 nm. Further, the external quantum efficiency is usually 60% or more, preferably 70% or more, and the weight median diameter is usually 0.1 μm or more, preferably 1.0 μm or more, more preferably 5.0 μm or more, and usually 40 μm or less. It is preferably 30 μm or less, and more preferably 20 μm or less.

作為此種黃色螢光體,例如可列舉各種氧化物系、氮化物系、氮氧化物系、硫化物系、氧硫化物系等螢光體。尤其,可列舉由RE3M5O12:Ce(此處,RE表示選自由Y、Tb、Gd、Lu及Sm所組成之群中之至少1種元素,M表示選自由Al、Ga及Sc所組成之群中之至少1種元素)或Ma3Mb2Mc3O12:Ce(此處,Ma表示2價金屬元素,Mb表示3價金屬元素,Mc表示4價金屬元素)等所表示之具有石榴石構造之石榴石系螢光體;由AE2MdO4:Eu(此處,AE表示選自由Ba、Sr、Ca、Mg及Zn所組成之群中之至少1種元素,Md表示Si及/或Ge)等所表示之正矽酸鹽系螢光體;將該等系之螢光體之構成元素之氧之一部分以氮取代之氮氧化物系螢光體;AEAlSiN3:Ce(此處,AE表示選自由Ba、Sr、Ca、Mg及Zn所組成之群中之至少1種元素)等以Ce賦活具有CaAlSiN3構造之氮化物系螢光體而成之螢光體。 Examples of such a yellow phosphor include various oxides such as an oxide system, a nitride system, an oxynitride system, a sulfide system, and an oxysulfide system. In particular, RE 3 M 5 O 12 :Ce (here, RE represents at least one element selected from the group consisting of Y, Tb, Gd, Lu, and Sm, and M represents a group selected from Al, Ga, and Sc At least one element of the group consisting of or Ma 3 Mb 2 Mc 3 O 12 :Ce (here, Ma represents a divalent metal element, Mb represents a trivalent metal element, Mc represents a tetravalent metal element), etc. a garnet-based phosphor having a garnet structure; from AE 2 MdO 4 :Eu (here, AE represents at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Zn, Md represents a orthosilicate-based phosphor represented by Si and/or Ge); an oxynitride-based phosphor in which a part of oxygen of constituent elements of the phosphors is replaced by nitrogen; AEAlSiN 3 :Ce (here, AE represents a phosphor selected from a group consisting of at least one element selected from the group consisting of Ba, Sr, Ca, Mg, and Zn), and a nitride-based phosphor having a CaAlSiN 3 structure is activated by Ce.

該等之中,較佳為使用石榴石系螢光體,其中,尤佳為使用Y3Al5O12:Ce(本案說明書中,有時亦記載為「YAG」)。 Among these, a garnet-based phosphor is preferably used. Among them, Y 3 Al 5 O 12 :Ce (in the present specification, it may be referred to as "YAG").

又,此外,作為黃色螢光體,亦可使用CaGa2S4:Eu、(Ca,Sr)Ga2S4:Eu、(Ca,Sr)(Ga,Al)2S4:Eu等硫化物系螢光體;Cax(Si,Al)12(O,N)16:Eu等具有SiAlON構造之氮氧化物系螢光體等以Eu賦活之螢光體;(M1-A-BEuAMnB)2(BO3)1-P(PO4)PX(其中,M表示選自由Ca、Sr及Ba所組成之群中之1種以上元素,X表示選自由F、Cl及Br所組成之群中之1種以上元素;A、B及P分別表示滿足0.001≦A≦0.3、0≦B≦0.3、0≦P≦0.2之數)等Eu賦活或Eu,Mn共賦活鹵化硼酸鹽螢光體;可含有鹼土類金屬元素且具有La3Si6N11構造之Ce賦活氮化物系螢光 體等。再者,關於上述Ce賦活氮化物系螢光體,其一部分亦可經Ca或O部分取代。 Further, as the yellow phosphor, a sulfide such as CaGa 2 S 4 :Eu, (Ca,Sr)Ga 2 S 4 :Eu, (Ca,Sr)(Ga,Al) 2 S 4 :Eu or the like may be used. Phosphor; a phosphor that is activated by Eu, such as an oxynitride-based phosphor having a SiAlON structure, such as Ca x (Si, Al) 12 (O, N) 16 : Eu; (M 1-AB Eu A Mn B ) 2 (BO 3 ) 1-P (PO 4 ) P X (wherein M represents one or more elements selected from the group consisting of Ca, Sr and Ba, and X represents a composition selected from the group consisting of F, Cl and Br One or more elements in the group; A, B, and P respectively represent Eu-activated or Eu, Mn, etc., which satisfies 0.001≦A≦0.3, 0≦B≦0.3, 0≦P≦0.2, etc. A light body; a Ce-activated nitride-based phosphor having an alkaline earth metal element and having a La 3 Si 6 N 11 structure. Further, a part of the above-mentioned Ce-activated nitride-based phosphor may be substituted with a Ca or O moiety.

於本實施樣態中,將波長變換構件之合計重量設為100重量%時之螢光體含量較佳為0.5重量%以上,更佳為1重量%以上。另一方面,較佳為15重量%以下,更佳為10重量%以下。藉由設為該範圍,波長變換構件之厚度容易成為適當之範圍,可抑制波長變換構件之強度降低。 In the present embodiment, the phosphor content when the total weight of the wavelength converting member is 100% by weight is preferably 0.5% by weight or more, and more preferably 1% by weight or more. On the other hand, it is preferably 15% by weight or less, more preferably 10% by weight or less. With this range, the thickness of the wavelength conversion member is likely to be in an appropriate range, and the decrease in strength of the wavelength conversion member can be suppressed.

又,波長變換構件中所包含之螢光體之平均粒徑較佳為10 μm以上,更佳為15 μm以上。藉由設為該範圍,可抑制波長變換效率之降低。 Further, the average particle diameter of the phosphor contained in the wavelength converting member is preferably 10 μm or more, and more preferably 15 μm or more. By setting it as this range, the fall of wavelength conversion efficiency can be suppressed.

此處,所謂上述平均粒徑,係指一次粒子之平均粒徑,係藉由雷射粒度計而測定之值。 Here, the average particle diameter refers to the average particle diameter of the primary particles, and is a value measured by a laser particle size analyzer.

<1-3.樹脂> <1-3. Resin>

本實施樣態中使用之樹脂可為結晶性樹脂,亦可為非晶性樹脂。以下,對本實施樣態中可使用之結晶性樹脂及非晶性樹脂進行說明。 The resin used in the present embodiment may be a crystalline resin or an amorphous resin. Hereinafter, the crystalline resin and the amorphous resin which can be used in the present embodiment will be described.

<1-3-1.結晶性樹脂> <1-3-1. Crystalline Resin>

作為本實施樣態中使用之具有結晶性之樹脂,只要為通常認知為結晶性樹脂之樹脂,則無特別限制,例如具有代表性的是,於示差掃描熱量測定中,觀察到伴隨以10℃/分鐘自熔融狀態冷卻至室溫時之結晶化熱或將固體狀態之樹脂以10℃/分鐘升溫時之融解熱之波峰的熱塑性樹脂,較佳為此時之熱量為2 J/g以上。 The resin having crystallinity used in the present embodiment is not particularly limited as long as it is a resin which is generally recognized as a crystalline resin. For example, it is typically observed that in the differential scanning calorimetry, 10 ° C is observed. The thermoplastic resin which is cooled from the molten state to room temperature or the peak of the heat of melting when the resin in a solid state is heated at 10 ° C /min is preferably 2 J/g or more.

關於具有結晶性之熱塑性樹脂,玻璃轉移溫度Tg與熔點Tm之間之溫度差較大,因此與具有相同程度之耐熱性之非晶性樹脂相比,可於相對低溫下進行混練而成形。因此,於成形時不易著色,故而較佳。 In the thermoplastic resin having crystallinity, since the temperature difference between the glass transition temperature Tg and the melting point Tm is large, it can be molded at a relatively low temperature compared with an amorphous resin having the same heat resistance. Therefore, it is preferable because it is not easily colored at the time of molding.

具有結晶性之熱塑性樹脂之種類並無特別限定,具體而言,可列舉聚乙烯、聚丙烯、聚-3-甲基丁烯-1、聚-4-甲基戊烯-1、聚乳酸、聚醯胺、聚縮醛、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯、聚苯硫醚、聚醚醚酮、含氟樹脂等。 The type of the thermoplastic resin having crystallinity is not particularly limited, and specific examples thereof include polyethylene, polypropylene, poly-3-methylbutene-1, poly-4-methylpentene-1, and polylactic acid. Polyamide, polyacetal, polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyphenylene sulfide, polyether ether ketone, fluorine resin, and the like.

該等之中,就耐久性之觀點而言,較佳為含氟樹脂,作為其具體 例,可列舉ETFE(乙烯-四氟乙烯共聚合體)、PTFE(聚四氟乙烯)、FEP(四氟乙烯-六氟丙烯共聚合體)、PFA(全氟烷氧基氟樹脂)、PVDF(聚偏二氟乙烯)、PVF(聚氟化乙烯)、PCTFE(聚氯三氟乙烯)及四氟乙烯、六氟丙烯、偏二氟乙烯之共聚合體,該等之中,就耐久性與成形性之觀點而言,較佳為ETFE、FEP、PFA,最佳為ETFE。作為ETFE,除乙烯與四氟乙烯以外,含有具有體積較大之側鏈之少量第三成分的ETFE於透光性或色度穩定性之方面進而較佳。 Among these, from the viewpoint of durability, a fluorine-containing resin is preferred as its specific Examples thereof include ETFE (ethylene-tetrafluoroethylene copolymer), PTFE (polytetrafluoroethylene), FEP (tetrafluoroethylene-hexafluoropropylene copolymer), PFA (perfluoroalkoxy fluororesin), and PVDF (poly). a mixture of vinylidene fluoride), PVF (polyvinyl fluoride), PCTFE (polychlorotrifluoroethylene), and tetrafluoroethylene, hexafluoropropylene, and vinylidene fluoride, among which durability and formability From the viewpoint of viewpoint, it is preferably ETFE, FEP, PFA, and most preferably ETFE. As ETFE, in addition to ethylene and tetrafluoroethylene, ETFE containing a small amount of a third component having a bulky side chain is further preferable in terms of light transmittance or chromaticity stability.

可僅使用1種該等具有結晶性之熱塑性樹脂,亦可混合2種以上而使用,可藉由合金化而調整全光線透過率,有偏離本實施樣態中之全光線透過率之範圍之情況。 Only one type of such a crystalline thermoplastic resin may be used, or two or more types may be used in combination, and the total light transmittance may be adjusted by alloying, which deviates from the range of the total light transmittance in the present embodiment. Happening.

又,具有結晶性之熱塑性樹脂之熔點較佳為150℃以上,更佳為168℃以上。於熔點為150℃以上之情形時,成形體之耐熱性提高。另一方面,熔點較佳為350℃以下,進而較佳為320℃以下,最佳為300℃以下。若為熔點超出350℃之樹脂,則即便為結晶性樹脂,加工溫度亦較高,伴隨樹脂之著色或分解,故而欠佳。 Further, the melting point of the crystalline thermoplastic resin is preferably 150 ° C or higher, more preferably 168 ° C or higher. When the melting point is 150 ° C or more, the heat resistance of the molded body is improved. On the other hand, the melting point is preferably 350 ° C or lower, more preferably 320 ° C or lower, and most preferably 300 ° C or lower. In the case of a resin having a melting point exceeding 350 ° C, even if it is a crystalline resin, the processing temperature is high, which is unsatisfactory due to coloring or decomposition of the resin.

<1-3-2.非晶性樹脂> <1-3-2. Amorphous resin>

作為本實施樣態中使用之非晶性樹脂,可列舉熱硬化性樹脂、熱塑性樹脂、光硬化性樹脂,較佳為熱塑性樹脂。作為熱硬化性樹脂,例如較佳為使用環氧樹脂及聚矽氧系樹脂。 The amorphous resin used in the present embodiment may, for example, be a thermosetting resin, a thermoplastic resin or a photocurable resin, and is preferably a thermoplastic resin. As the thermosetting resin, for example, an epoxy resin and a polyoxymethylene resin are preferably used.

作為非晶性之熱塑性樹脂之例,可列舉:含有降烯等之脂環式聚烯烴樹脂等聚烯烴系樹脂;乙烯與甲基-、乙基-、丙基-、丁基-之各丙烯酸酯或甲基丙烯酸酯之共聚合體、乙烯-丙烯酸共聚合體等離子聚合物樹脂;聚苯乙烯樹脂、ABS樹脂、AS樹脂、AAS樹脂、AES樹脂、MBS樹脂等苯乙烯系樹脂;聚甲基丙烯酸甲酯、聚甲基丙烯酸酯等丙烯酸系樹脂;聚碳酸酯樹脂等聚酯系樹脂;改質聚苯醚樹脂;聚胺基甲酸酯樹脂;聚芳酯樹脂;聚醚醯亞胺樹脂;聚醯亞胺樹脂等,可列舉其等之1種或2種以上之混合品等。 Examples of the amorphous thermoplastic resin include: a polyolefin-based resin such as an alicyclic polyolefin resin such as a olefin; a copolymer of ethylene and methyl-, ethyl-, propyl-, butyl- acrylate or methacrylate, and an ethylene-acrylic acid copolymer Plasma polymer resin; styrene resin such as polystyrene resin, ABS resin, AS resin, AAS resin, AES resin, MBS resin; acrylic resin such as polymethyl methacrylate or polymethacrylate; polycarbonate Polyester resin such as resin; modified polyphenylene ether resin; polyurethane resin; polyarylate resin; polyether quinone imine resin; polyimine resin, etc., etc. A mixture of the above and the like.

又,樹脂亦可為合金,藉由以合金之形式使用,可調節螢光體量,其結果為,具有可調節全光線透過率之優點。 Further, the resin may be an alloy, and the amount of the phosphor can be adjusted by using it in the form of an alloy, and as a result, it has an advantage that the total light transmittance can be adjusted.

該等之中,於透明性、耐熱性、機械特性、難燃性優異之方面,可最佳地使用聚碳酸酯樹脂。以下對聚碳酸酯樹脂進行詳細說明。 Among these, a polycarbonate resin can be optimally used in terms of transparency, heat resistance, mechanical properties, and flame retardancy. The polycarbonate resin will be described in detail below.

本實施樣態中使用之聚碳酸酯樹脂係由下述之通常化學式(1)所表示之具有碳酸鍵之基本構造之聚合體。 The polycarbonate resin used in the present embodiment is a polymer having a basic structure of a carbonic acid bond represented by the following general chemical formula (1).

化學式(1)中,X1一般為烴,為賦予各種特性,亦可使用導入雜原子、雜鍵之X1In the chemical formula (1), X 1 is generally a hydrocarbon, and in order to impart various properties, X 1 which introduces a hetero atom or a hetero bond may be used.

又,聚碳酸酯樹脂可分類為直接鍵結於碳酸鍵之碳分別為芳香族碳之芳香族聚碳酸酯樹脂及為脂肪族碳之脂肪族聚碳酸酯樹脂,可使用任一種。其中,就耐熱性、機械物性、電氣特性等觀點而言,較佳為芳香族聚碳酸酯樹脂。 Further, the polycarbonate resin can be classified into an aromatic polycarbonate resin which is directly bonded to a carbonic acid bond and an aromatic polycarbonate resin which is an aromatic carbon, and an aliphatic polycarbonate resin which is an aliphatic carbon, and any of them can be used. Among them, from the viewpoints of heat resistance, mechanical properties, electrical properties, and the like, an aromatic polycarbonate resin is preferred.

聚碳酸酯樹脂之具體種類並無限制,例如可列舉使二羥基化合物與碳酸酯前驅物進行反應而成之聚碳酸酯聚合體。此時,除二羥基化合物及碳酸酯前驅物以外,亦可使聚羥基化合物等進行反應。又,亦可使用將二氧化碳作為碳酸酯前驅物與環狀醚進行反應之方法。又,聚碳酸酯聚合體可為直鏈狀,亦可為支鏈狀。進而,聚碳酸酯聚合體可為由1種重複單位構成之均聚合體,亦可為具有2種以上重複單位之共聚合體。此時,共聚合體可選擇無規共聚合體、嵌段共聚合體等各種共聚合形態。再者,此種聚碳酸酯聚合體通常為熱塑性樹脂。 The specific type of the polycarbonate resin is not limited, and examples thereof include a polycarbonate polymer obtained by reacting a dihydroxy compound with a carbonate precursor. In this case, in addition to the dihydroxy compound and the carbonate precursor, a polyhydroxy compound or the like may be reacted. Further, a method of reacting carbon dioxide as a carbonate precursor with a cyclic ether can also be used. Further, the polycarbonate polymer may be linear or branched. Further, the polycarbonate polymer may be a homopolymer composed of one type of repeating unit, or a copolymer having two or more repeating units. In this case, the copolymer may be in various copolymerization forms such as a random copolymer or a block copolymer. Further, such a polycarbonate polymer is usually a thermoplastic resin.

成為芳香族聚碳酸酯樹脂之原料之單體之中,若列舉芳香族二羥基化合物之例,則可列舉:1,2-二羥基苯、1,3-二羥基苯(即間苯二酚)、1,4-二羥基苯等二羥基苯類;2,5-二羥基聯苯、2,2'二羥基聯苯、4,4'-二羥基聯苯等二羥基聯苯類;2,2'-二羥基-1,1'-聯萘、1,2-二羥基萘、1,3-二羥基萘、2,3-二羥基萘、1,6-二羥基萘、2,6-二羥基萘、1,7- 二羥基萘、2,7-二羥基萘等二羥基萘類;2,2'二羥基二苯醚、3,3'-二羥基二苯醚、4,4'-二羥基二苯醚、4,4-二羥基-3,3'二甲基二苯醚、1,4-雙(3-羥基苯氧基)苯、1,3-雙(4-羥基苯氧基)苯等二羥基二芳基醚類;2,2-雙(4-羥基苯基)丙烷(即雙酚A)、1,1-雙(4-羥基苯基)丙烷、2,2-雙(3-甲基-4-羥基苯基)丙烷、2,2-雙(3-甲氧基-4-羥基苯基)丙烷、2-(4-羥基苯基)-2-(3-甲氧基-4-羥基苯基)丙烷、1,1-雙(3-第三丁基-4-羥基苯基)丙烷、2,2-雙(4-羥基-3,5-二甲基苯基)丙烷、2,2-雙(3-環己基-4-羥基苯基)丙烷、2-(4-羥基苯基)-2-(3-環己基-4-羥基苯基)丙烷、α,α'-雙(4-羥基苯基)-1,4-二異丙基苯、1,3-雙[2-(4-羥基苯基)-2-丙基]苯、雙(4-羥基苯基)甲烷、雙(4-羥基苯基)環己基甲烷、雙(4-羥基苯基)苯基甲烷、雙(4-羥基苯基)(4-丙烯基苯基)甲烷、雙(4-羥基苯基)二苯基甲烷、雙(4-羥基苯基)萘基甲烷、1-雙(4-羥基苯基)乙烷、2-雙(4-羥基苯基)乙烷、1,1-雙(4-羥基苯基)-1-苯基乙烷、1,1-雙(4-羥基苯基)-1-萘基乙烷、1-雙(4-羥基苯基)丁烷、2-雙(4-羥基苯基)丁烷、2,2-雙(4-羥基苯基)戊烷、1,1-雙(4-羥基苯基)己烷、2,2-雙(4-羥基苯基)己烷、1-雙(4-羥基苯基)辛烷、2-雙(4-羥基苯基)辛烷、1-雙(4-羥基苯基)己烷、2-雙(4-羥基苯基)己烷、4,4-雙(4-羥基苯基)庚烷、2,2-雙(4-羥基苯基)壬烷、10-雙(4-羥基苯基)癸烷、1-雙(4-羥基苯基)十二烷等雙(羥基芳基)烷烴類;1-雙(4-羥基苯基)環戊烷、1-雙(4-羥基苯基)環己烷、4-雙(4-羥基苯基)環己烷、1,1-雙(4-羥基苯基)-3,3-二甲基環己烷、1-雙(4-羥基苯基)-3,4-二甲基環己烷、1,1-雙(4-羥基苯基)-3,5-二甲基環己烷、1,1-雙(4-羥基苯基)-3,3,5-三甲基環己烷、1,1-雙(4-羥基-3,5-二甲基苯基)-3,3,5-三丁基環己烷、1,1-雙(4-羥基苯基)-3-丙基-5-甲基環己烷、1,1-雙(4-羥基苯基)-3-第三丁基-環己烷、1,1-雙(4-羥基苯基)-3-第三丁基-環己烷、1,1-雙(4-羥基苯基)-3-苯基環己烷、1,1-雙(4-羥基苯基)-4-苯基環己烷等雙(羥基芳基)環烷烴類;9,9-雙(4-羥基苯基)茀、9,9-雙(4-羥基-3-甲基苯基)茀等含有cardo構造之雙酚類;4,4'-二羥基二苯硫醚、4,4'-二羥基-3,3'-二甲基二苯硫醚等二羥基二芳基硫醚類;4,4'-二羥基二苯基亞碸、4,4'二羥基-3,3'-二甲基二苯基亞碸等二羥基二芳基亞碸類;4,4'-二羥基二苯基 碸、4,4'-二羥基-3,3'二甲基二苯基碸等二羥基二芳基碸類等。 Among the monomers which are raw materials of the aromatic polycarbonate resin, examples of the aromatic dihydroxy compound include 1,2-dihydroxybenzene and 1,3-dihydroxybenzene (i.e., resorcinol). Dihydroxybenzenes such as 1,4-dihydroxybenzene; dihydroxybiphenyls such as 2,5-dihydroxybiphenyl, 2,2' dihydroxybiphenyl, 4,4'-dihydroxybiphenyl; , 2'-dihydroxy-1,1'-binaphthyl, 1,2-dihydroxynaphthalene, 1,3-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6 -Dihydroxynaphthalene, 1,7- Dihydroxynaphthalenes such as dihydroxynaphthalene and 2,7-dihydroxynaphthalene; 2,2'dihydroxydiphenyl ether, 3,3'-dihydroxydiphenyl ether, 4,4'-dihydroxydiphenyl ether, 4 , 4-dihydroxy-3,3' dimethyldiphenyl ether, 1,4-bis(3-hydroxyphenoxy)benzene, 1,3-bis(4-hydroxyphenoxy)benzene, etc. Aryl ethers; 2,2-bis(4-hydroxyphenyl)propane (ie bisphenol A), 1,1-bis(4-hydroxyphenyl)propane, 2,2-bis(3-methyl- 4-hydroxyphenyl)propane, 2,2-bis(3-methoxy-4-hydroxyphenyl)propane, 2-(4-hydroxyphenyl)-2-(3-methoxy-4-hydroxyl Phenyl)propane, 1,1-bis(3-tert-butyl-4-hydroxyphenyl)propane, 2,2-bis(4-hydroxy-3,5-dimethylphenyl)propane, 2, 2-bis(3-cyclohexyl-4-hydroxyphenyl)propane, 2-(4-hydroxyphenyl)-2-(3-cyclohexyl-4-hydroxyphenyl)propane, α,α'-double ( 4-hydroxyphenyl)-1,4-diisopropylbenzene, 1,3-bis[2-(4-hydroxyphenyl)-2-propyl]benzene, bis(4-hydroxyphenyl)methane, Bis(4-hydroxyphenyl)cyclohexylmethane, bis(4-hydroxyphenyl)phenylmethane, bis(4-hydroxyphenyl)(4-propenylphenyl)methane, bis(4-hydroxyphenyl) Diphenylmethane, bis(4-hydroxyphenyl)naphthylmethane, 1-bis(4-hydroxybenzene) Ethylene, 2-bis(4-hydroxyphenyl)ethane, 1,1-bis(4-hydroxyphenyl)-1-phenylethane, 1,1-bis(4-hydroxyphenyl)- 1-naphthylethane, 1-bis(4-hydroxyphenyl)butane, 2-bis(4-hydroxyphenyl)butane, 2,2-bis(4-hydroxyphenyl)pentane, 1, 1-bis(4-hydroxyphenyl)hexane, 2,2-bis(4-hydroxyphenyl)hexane, 1-bis(4-hydroxyphenyl)octane, 2-bis(4-hydroxyphenyl) Octane, 1-bis(4-hydroxyphenyl)hexane, 2-bis(4-hydroxyphenyl)hexane, 4,4-bis(4-hydroxyphenyl)heptane, 2,2-double Bis(hydroxyaryl)alkanes such as (4-hydroxyphenyl)decane, 10-bis(4-hydroxyphenyl)decane, 1-bis(4-hydroxyphenyl)dodecane; 1-double ( 4-hydroxyphenyl)cyclopentane, 1-bis(4-hydroxyphenyl)cyclohexane, 4-bis(4-hydroxyphenyl)cyclohexane, 1,1-bis(4-hydroxyphenyl) -3,3-dimethylcyclohexane, 1-bis(4-hydroxyphenyl)-3,4-dimethylcyclohexane, 1,1-bis(4-hydroxyphenyl)-3,5 - dimethylcyclohexane, 1,1-bis(4-hydroxyphenyl)-3,3,5-trimethylcyclohexane, 1,1-bis(4-hydroxy-3,5-dimethyl Phenyl)-3,3,5-tributylcyclohexane, 1,1-bis(4-hydroxyphenyl)-3-propyl-5-methylcyclohexane, 1,1-double ( 4-hydroxyphenyl)-3- Butyl-cyclohexane, 1,1-bis(4-hydroxyphenyl)-3-tert-butyl-cyclohexane, 1,1-bis(4-hydroxyphenyl)-3-phenylcyclohexane Bis(hydroxyaryl)cycloalkanes such as alkane, 1,1-bis(4-hydroxyphenyl)-4-phenylcyclohexane; 9,9-bis(4-hydroxyphenyl)anthracene, 9,9 - bisphenols containing cardo structure such as bis(4-hydroxy-3-methylphenyl)anthracene; 4,4'-dihydroxydiphenyl sulfide, 4,4'-dihydroxy-3,3'-di Dihydroxydiaryl sulfides such as methyl diphenyl sulfide; 4,4'-dihydroxydiphenylarylene, 4,4' dihydroxy-3,3'-dimethyldiphenylarylene, etc. Dihydroxydiarylhydrazone; 4,4'-dihydroxydiphenyl Dihydroxy diaryl hydrazines such as hydrazine and 4,4'-dihydroxy-3,3' dimethyldiphenyl hydrazine.

該等之中,較佳為雙(羥基芳基)烷烴類,其中較佳為雙(4-羥基苯基)烷烴類,尤其,就耐衝擊性、耐熱性之觀點而言,較佳為2,2-雙(4-羥基苯基)丙烷(即雙酚A)。 Among these, a bis(hydroxyaryl)alkane is preferable, and among them, a bis(4-hydroxyphenyl)alkane is preferable, and in particular, from the viewpoint of impact resistance and heat resistance, it is preferably 2 , 2-bis(4-hydroxyphenyl)propane (ie bisphenol A).

再者,芳香族二羥基化合物可僅使用1種,亦可將2種以上以任意組合及比率併用。 Further, the aromatic dihydroxy compound may be used alone or in combination of two or more kinds in any combination and in any ratio.

又,若列舉成為脂肪族聚碳酸酯樹脂之原料之單體之例,則可列舉:乙烷-1,2-二醇、丙烷-1,2-二醇、丙烷-1,3-二醇、2,2-二甲基丙烷-1,3-二醇、2-甲基-2-丙基丙烷-1,3-二醇、丁烷-1,4-二醇、戊烷-1,5-二醇、己烷-1,6-二醇、癸烷-1,10-二醇等烷烴二醇類;環戊烷-1,2-二醇、環己烷-1,2-二醇、環己烷-1,4-二醇、1,4-環己烷二甲醇、4-(2-羥基乙基)環己醇、2,2,4,4-四甲基-環丁烷-1,3-二醇等環烷烴二醇類;2,2'-氧基二乙醇(即乙二醇)、二乙二醇、三乙二醇、丙二醇、螺二醇等二醇類;1,2-苯二甲醇、1,3-苯二甲醇、1,4-苯二甲醇、1,4-苯二乙醇、1,3-雙(2-羥基乙氧基)苯、1,4-雙(2-羥基乙氧基)苯、2,3-雙(羥基甲基)萘、1,6-雙(羥基乙氧基)萘、4,4'聯苯二甲醇、4,4'-聯苯二乙醇、1,4-雙(2-羥基乙氧基)聯苯、雙酚A雙(2-羥基乙基)醚、雙酚S雙(2-羥基乙基)醚等芳烷基二醇類;1,2-環氧乙烷(即環氧乙烷)、1,2-環氧丙烷(即環氧丙烷)、1,2-環氧環戊烷、1,2-環氧環己烷、1,4-環氧環己烷、1-甲基-1,2-環氧環己烷、2,3-環氧降烷、1,3-環氧丙烷等環狀醚類,該等可使用1種,亦可以任意之組合及比率併用2種以上。 In addition, examples of the monomer which is a raw material of the aliphatic polycarbonate resin include ethane-1,2-diol, propane-1,2-diol, and propane-1,3-diol. , 2,2-dimethylpropane-1,3-diol, 2-methyl-2-propylpropane-1,3-diol, butane-1,4-diol, pentane-1, Alkane diols such as 5-diol, hexane-1,6-diol, decane-1,10-diol; cyclopentane-1,2-diol, cyclohexane-1,2-di Alcohol, cyclohexane-1,4-diol, 1,4-cyclohexanedimethanol, 4-(2-hydroxyethyl)cyclohexanol, 2,2,4,4-tetramethyl-cyclobutane a cycloalkane glycol such as an alkane-1,3-diol; a glycol such as 2,2'-oxydiethanol (i.e., ethylene glycol), diethylene glycol, triethylene glycol, propylene glycol or spirodiol ; 1,2-benzenedimethanol, 1,3-benzenedimethanol, 1,4-benzenedimethanol, 1,4-benzenediethanol, 1,3-bis(2-hydroxyethoxy)benzene, 1, 4-bis(2-hydroxyethoxy)benzene, 2,3-bis(hydroxymethyl)naphthalene, 1,6-bis(hydroxyethoxy)naphthalene, 4,4'biphenyldimethanol, 4,4 '-biphenyldiethanol, 1,4-bis(2-hydroxyethoxy)biphenyl, bisphenol A bis(2-hydroxyethyl)ether, bisphenol S bis(2-hydroxyethyl)ether, etc. Alkylene glycols; 1,2-ethylene oxide (ie epoxy B) ), 1,2-propylene oxide (ie, propylene oxide), 1,2-epoxycyclopentane, 1,2-epoxycyclohexane, 1,4-epoxycyclohexane, 1-methyl -1,2-epoxycyclohexane, 2,3-epoxy drop A cyclic ether such as an alkane or a 1,3-epoxypropane may be used alone or in combination of two or more kinds in any combination and in any ratio.

成為香族聚碳酸酯樹脂之原料之單體之中,若列舉碳酸酯前驅物之例,則可列舉羰基鹵化物、碳酸酯等。再者,碳酸酯前驅物可使用1種,亦可以任意之組合及比率併用2種以上。 Among the monomers which are raw materials of the aromatic polycarbonate resin, examples of the carbonate precursor include a carbonyl halide, a carbonate, and the like. Further, one type of the carbonate precursor may be used, or two or more types may be used in any combination and in any ratio.

作為羰基鹵化物,具體而言,例如可列舉碳醯氯、二羥基化合物之雙氯甲酸酯體、二羥基化合物之單氯甲酸酯體等鹵代甲酸酯等。 Specific examples of the carbonyl halide include a hafnium chloride, a bischloroformate of a dihydroxy compound, a haloformate such as a monochloroformate of a dihydroxy compound, and the like.

作為碳酸酯,具體而言,例如可列舉碳酸二苯酯、碳酸二甲苯酯等碳酸二芳基酯類;碳酸二甲酯、碳酸二乙酯等碳酸二烷基 酯類;二羥基化合物之雙碳酸酯體、二羥基化合物之單碳酸酯體、環狀碳酸酯等二羥基化合物之碳酸酯體等。 Specific examples of the carbonate include diaryl carbonates such as diphenyl carbonate and ditolyl carbonate; and dialkyl carbonates such as dimethyl carbonate and diethyl carbonate. An ester; a dicarbonate of a dihydroxy compound, a monocarbonate of a dihydroxy compound, a carbonate of a dihydroxy compound such as a cyclic carbonate, or the like.

聚碳酸酯樹脂之製造方法並無特別限定,可採用任意方法。若列舉其例,則可列舉界面聚合法、熔融酯交換法、吡啶法、環狀碳酸酯化合物之開環聚合法、預聚物之固相酯交換法等。以下,對該等方法之中尤佳之界面聚合法及熔融酯交換法具體進行說明。 The method for producing the polycarbonate resin is not particularly limited, and any method can be employed. Examples thereof include an interfacial polymerization method, a melt transesterification method, a pyridine method, a ring-opening polymerization method of a cyclic carbonate compound, and a solid phase transesterification method of a prepolymer. Hereinafter, an interfacial polymerization method and a melt transesterification method which are particularly preferable among the methods will be specifically described.

(界面聚合法) (Interfacial polymerization method)

界面聚合法中,於對反應為惰性之有機溶劑及鹼性水溶液之存在下,通常將pH值保持為9以上,使二羥基化合物與碳酸酯前驅物(較佳為碳醯氯)進行反應後,於聚合觸媒之存在下進行界面聚合,藉此獲得聚碳酸酯樹脂。再者,於反應系中,亦可視需要而存在分子量調整劑(末端封端劑),為防止二羥基化合物之氧化,亦可存在抗氧化劑。 In the interfacial polymerization method, the pH is usually maintained at 9 or more in the presence of an organic solvent inert to the reaction and an aqueous alkaline solution, and the dihydroxy compound is reacted with a carbonate precursor (preferably carbon ruthenium chloride). Interfacial polymerization is carried out in the presence of a polymerization catalyst, whereby a polycarbonate resin is obtained. Further, in the reaction system, a molecular weight modifier (end terminal blocking agent) may be present as needed, and an antioxidant may be present to prevent oxidation of the dihydroxy compound.

二羥基化合物及碳酸酯前驅物如上所述。再者,碳酸酯前驅物中亦較佳為使用碳醯氯,使用碳醯氯之情形時之方法尤其稱為碳醯氯法。 The dihydroxy compound and the carbonate precursor are as described above. Further, it is preferable to use carbonium chloride in the carbonate precursor, and the method in the case of using carbonium chloride is especially called carbonium chloride.

作為對反應為惰性之有機溶劑,例如可列舉二氯甲烷、1,2-二氯乙烷、氯仿、單氯苯、二氯苯等氯化烴等;苯、甲苯、二甲苯等芳香族烴等。再者,有機溶劑可使用1種,亦可以任意之組合及比率併用2種以上。 Examples of the organic solvent inert to the reaction include chlorinated hydrocarbons such as dichloromethane, 1,2-dichloroethane, chloroform, monochlorobenzene, and dichlorobenzene; and aromatic hydrocarbons such as benzene, toluene, and xylene. Wait. In addition, one type of the organic solvent may be used, or two or more types may be used in any combination and in any ratio.

作為鹼性水溶液中所含有之鹼性化合物,例如可列舉氫氧化鈉、氫氧化鉀、氫氧化鋰、碳酸氫鈉等鹼性金屬化合物或鹼土類金屬化合物,其中較佳為氫氧化鈉及氫氧化鉀。再者,鹼性化合物可使用1種,亦可以任意之組合及比率併用2種以上。 Examples of the basic compound contained in the alkaline aqueous solution include basic metal compounds such as sodium hydroxide, potassium hydroxide, lithium hydroxide, and sodium hydrogencarbonate, and alkaline earth metal compounds. Among them, sodium hydroxide and hydrogen are preferred. Potassium oxide. In addition, one type of the basic compound may be used, or two or more types may be used in any combination and in any ratio.

鹼性水溶液中之鹼性化合物之濃度並無限制,通常,為了將反應之鹼性水溶液中之pH值控制為10~12,而以5~10重量%使用。又,例如於噴入碳醯氯時,為了以水相之pH值成為10~12、較佳為10~11之方式進行控制,較佳為將雙酚化合物與鹼性化合物之莫耳比通常設為1:1.9以上,其中較佳為1:2.0以上,又,通常設為1:3.2以下,其中較佳為1:2.5以下。 The concentration of the basic compound in the alkaline aqueous solution is not limited, and is usually used in an amount of 5 to 10% by weight in order to control the pH in the alkaline aqueous solution of the reaction to 10 to 12. Further, for example, when carbonium chloride is sprayed, in order to control the pH of the aqueous phase to 10 to 12, preferably 10 to 11, it is preferred to use a molar ratio of the bisphenol compound to the basic compound. It is set to 1:1.9 or more, and is preferably 1:2.0 or more, and is usually set to 1:3.2 or less, and preferably 1:2.5 or less.

作為聚合觸媒,例如可列舉:三甲胺、三乙胺、三丁胺、三丙胺、三己胺等脂肪族三級胺;N,N'-二甲基環己基胺、N,N'-二乙基環己基胺等脂環式三級胺;N,N'-二甲基苯胺、N,N'-二乙基苯胺等芳香族三級胺;氯化三甲基苄基銨、氯化四甲基銨、氯化三乙基苄基銨等四級銨鹽、吡啶、鳥嘌呤、胍之鹽等。再者,聚合觸媒可使用1種,亦可以任意之組合及比率併用2種以上。 Examples of the polymerization catalyst include aliphatic tertiary amines such as trimethylamine, triethylamine, tributylamine, tripropylamine, and trihexylamine; N,N'-dimethylcyclohexylamine, N,N'- An alicyclic tertiary amine such as diethylcyclohexylamine; an aromatic tertiary amine such as N,N'-dimethylaniline or N,N'-diethylaniline; trimethylbenzylammonium chloride or chlorine A tetra-ammonium salt such as tetramethylammonium or triethylbenzylammonium chloride, or a salt of pyridine, guanine or guanidine. Further, one type of the polymerization catalyst may be used, or two or more types may be used in any combination and in any ratio.

作為分子量調整劑,例如可列舉具有一價酚性羥基之芳香族苯酚;甲醇、丁醇等脂肪族醇、硫醇、苯二甲醯亞胺等,其中較佳為芳香族苯酚。作為此種芳香族苯酚,具體而言,可列舉:間甲基苯酚、對甲基苯酚、間丙基苯酚、對丙基苯酚、對第三丁基苯酚、對長鏈烷基取代苯酚等烷基取代苯酚;異敵稗苯酚等含有乙烯基之苯酚、含有環氧基之苯酚、鄰8-羥基喹啉苯甲酸、2-甲基-6-羥基苯基乙酸等含有羧基之苯酚等。再者,分子量調整劑可使用1種,亦可以任意之組合及比率併用2種以上。 Examples of the molecular weight modifier include aromatic phenols having a monovalent phenolic hydroxyl group; aliphatic alcohols such as methanol and butanol; mercaptans and benzylidene imine; and among them, aromatic phenols are preferred. Specific examples of such an aromatic phenol include an alkane such as m-methylphenol, p-methylphenol, m-propylphenol, p-propylphenol, p-tert-butylphenol, or a long-chain alkyl-substituted phenol. a phenol containing a vinyl group, a phenol containing an epoxy group, a phenol containing an epoxy group, a phenol containing a carboxyl group such as 8-methyl-6-hydroxyphenylacetic acid, or the like. In addition, one type of the molecular weight modifier may be used, or two or more types may be used in any combination and in any ratio.

分子量調整劑之使用量相對於二羥基化合物100莫耳,通常為0.5莫耳以上,較佳為1莫耳以上,又,通常為50莫耳以下,較佳為30莫耳以下。藉由將分子量調整劑之使用量設為該範圍,可使聚碳酸酯樹脂組成物之熱穩定性及耐水解性提高。 The molecular weight modifier is used in an amount of usually 0.5 mol or more, preferably 1 mol or more, and usually 50 mol or less, preferably 30 mol or less, based on 100 mol of the dihydroxy compound. By setting the amount of the molecular weight modifier to be in this range, the thermal stability and hydrolysis resistance of the polycarbonate resin composition can be improved.

於反應時,只要可獲得所需之聚碳酸酯樹脂,則混合反應基質、反應媒、觸媒、添加劑等之順序為任意,可任意地設定適當之順序。例如,於使用碳醯氯作為碳酸酯前驅物之情形時,分子量調整劑只要於自二羥基化合物與碳醯氯之反應(碳醯氯化)時起至聚合反應開始時為止期間,則可於任意之時期進行混合。再者,反應溫度通常為0~40℃,反應時間通常為數分鐘(例如10分鐘)~數小時(例如6小時)。 At the time of the reaction, as long as the desired polycarbonate resin is obtained, the order of mixing the reaction substrate, the reaction medium, the catalyst, the additive, and the like is arbitrary, and an appropriate order can be arbitrarily set. For example, when carbonium chloride is used as the carbonate precursor, the molecular weight modifier may be used during the reaction from the reaction of the dihydroxy compound with the carbon ruthenium chloride (carbon ruthenium chloride) until the start of the polymerization reaction. Mix at any time. Further, the reaction temperature is usually from 0 to 40 ° C, and the reaction time is usually from several minutes (for example, 10 minutes) to several hours (for example, 6 hours).

(熔融酯交換法) (melt transesterification method)

熔融酯交換法中,例如進行碳酸二酯與二羥基化合物之酯交換反應。 In the melt transesterification method, for example, a transesterification reaction between a carbonic acid diester and a dihydroxy compound is carried out.

二羥基化合物如上所述。另一方面,作為碳酸二酯,例 如可列舉碳酸二甲酯、碳酸二乙酯、碳酸二-第三丁酯等碳酸二烷基酯化合物;碳酸二苯酯;碳酸二甲苯酯等取代碳酸二苯酯等。其中,較佳為碳酸二苯酯及取代碳酸二苯酯,尤佳為碳酸二苯酯。再者,碳酸二酯可使用1種,亦可以任意之組合及比率併用2種以上。 The dihydroxy compound is as described above. On the other hand, as a carbonic acid diester, an example Examples thereof include a dialkyl carbonate compound such as dimethyl carbonate, diethyl carbonate or di-tert-butyl carbonate; diphenyl carbonate; substituted diphenyl carbonate such as ditolyl carbonate; and the like. Among them, diphenyl carbonate and substituted diphenyl carbonate are preferred, and diphenyl carbonate is preferred. Further, the carbonic acid diester may be used alone or in combination of two or more kinds in any combination and in any ratio.

只要可獲得所需之聚碳酸酯樹脂,則二羥基化合物與碳酸二酯之比率為任意,相對於二羥基化合物1莫耳,較佳為使用等莫耳量以上之碳酸二酯,其中更佳為使用1.01莫耳以上。再者,上限通常為1.30莫耳以下。藉由設為此種範圍,可將末端羥基量調整為較佳之範圍。 The ratio of the dihydroxy compound to the carbonic acid diester is arbitrary as long as the desired polycarbonate resin is obtained, and it is preferable to use a carbonic acid diester or more in an amount equal to or more than the molar amount of the dihydroxy compound. For use above 1.01 Moule. Further, the upper limit is usually 1.30 m or less. By setting it as such a range, the terminal hydroxyl group can be adjusted to a preferable range.

若為聚碳酸酯樹脂,則有其末端羥基量對熱穩定性、水解穩定性、色調等造成較大影響之傾向。因此,亦可藉由公知之任意方法而視需要調整末端羥基量。酯交換反應中,通常可藉由調整碳酸二酯與芳香族二羥基化合物之混合比率、酯交換反應時之減壓度等,而獲得末端羥基量經調整之聚碳酸酯樹脂。再者,藉由該操作,通常亦可調整所獲得之聚碳酸酯樹脂之分子量。 In the case of a polycarbonate resin, the amount of terminal hydroxyl groups tends to have a large influence on thermal stability, hydrolytic stability, color tone, and the like. Therefore, the amount of terminal hydroxyl groups can also be adjusted as needed by any known method. In the transesterification reaction, a polycarbonate resin having a terminal hydroxyl group-adjusted amount can be usually obtained by adjusting the mixing ratio of the carbonic acid diester and the aromatic dihydroxy compound, the degree of pressure reduction during the transesterification reaction, and the like. Further, by this operation, the molecular weight of the obtained polycarbonate resin can usually also be adjusted.

於調整碳酸二酯與二羥基化合物之混合比率而調整末端羥基量之情形時,其混合比率如上所述。又,作為更積極之調整方法,可列舉於反應時另行混合末端封端劑之方法。作為此時之末端封端劑,例如可列舉一元酚類、一元羧酸類、碳酸二酯類等。再者,末端封端劑可使用1種,亦可以任意之組合及比率併用2種以上。 When the mixing ratio of the carbonic acid diester and the dihydroxy compound is adjusted to adjust the amount of terminal hydroxyl groups, the mixing ratio thereof is as described above. Further, as a more aggressive adjustment method, a method of separately mixing the terminal blocking agent at the time of the reaction can be mentioned. Examples of the terminal blocking agent at this time include monohydric phenols, monocarboxylic acids, and carbonic acid diesters. Further, one type of the terminal blocking agent may be used, or two or more types may be used in any combination and in any ratio.

於藉由熔融酯交換法而製造聚碳酸酯樹脂時,通常使用酯交換觸媒。酯交換觸媒可使用任意者。其中,較佳為使用例如鹼金屬化合物及/或鹼土類金屬化合物。又,亦可輔助地併用例如鹼性硼化合物、鹼性磷化合物、鹼性銨化合物、胺系化合物等鹼性化合物。再者,酯交換觸媒可使用1種,亦可以任意之組合及比率併用2種以上。 When a polycarbonate resin is produced by a melt transesterification method, a transesterification catalyst is usually used. Any one can be used for the transesterification catalyst. Among them, it is preferred to use, for example, an alkali metal compound and/or an alkaline earth metal compound. Further, a basic compound such as a basic boron compound, a basic phosphorus compound, a basic ammonium compound or an amine compound may be used in combination. Further, one type of the transesterification catalyst may be used, or two or more types may be used in any combination and in any ratio.

熔融酯交換法中,反應溫度通常為100~320℃。又,反應時之壓力通常為2 mmHg以下之減壓條件。作為具體操作,可於上述條件下一面去除芳香族羥基化合物等副生成物,一面進行熔融聚縮合反應。 In the melt transesterification method, the reaction temperature is usually from 100 to 320 °C. Further, the pressure at the time of the reaction is usually a reduced pressure condition of 2 mmHg or less. As a specific operation, a melt-condensation reaction can be carried out while removing a by-product such as an aromatic hydroxy compound under the above conditions.

熔融聚縮合反應可以批次式、連續式中之任一方法而進行。於以批次式進行之情形時,只要可獲得所需之芳香族聚碳酸酯樹脂,則混合反應基質、反應媒、觸媒、添加劑等之順序為任意,可任意地設定適當之順序。但是,其中,若考慮聚碳酸酯樹脂及聚碳酸酯樹脂組成物之穩定性等,則熔融聚縮合反應較佳為以連續式進行。 The melt polycondensation reaction can be carried out by any of a batch method and a continuous method. When it is carried out in a batch form, the order of mixing the reaction substrate, the reaction medium, the catalyst, the additive, and the like is arbitrary as long as the desired aromatic polycarbonate resin is obtained, and an appropriate order can be arbitrarily set. However, in consideration of the stability of the polycarbonate resin and the polycarbonate resin composition, the melt-condensation reaction is preferably carried out in a continuous manner.

於熔融酯交換法中,亦可視需要而使用觸媒失活劑。作為觸媒失活劑,可任意地使用中和酯交換觸媒之化合物。若列舉其例,則可列舉含硫之酸性化合物及其衍生物等。再者,觸媒失活劑可使用1種,亦可以任意之組合及比率併用2種以上。 In the melt transesterification process, a catalyst deactivator may also be used as needed. As the catalyst deactivator, a compound which neutralizes the transesterification catalyst can be used arbitrarily. Examples of the examples include sulfur-containing acidic compounds and derivatives thereof. Further, one type of the catalyst deactivator may be used, or two or more types may be used in any combination and ratio.

觸媒失活劑之使用量相對於上述酯交換觸媒所含有之鹼金屬或鹼土類金屬,通常為0.5當量以上,較佳為1當量以上,又,通常為10當量以下,較佳為5當量以下。進而,相對於芳香族聚碳酸酯樹脂,通常為1 ppm以上,又,通常為100 ppm以下,較佳為20 ppm以下。 The amount of the catalyst deactivator to be used is usually 0.5 equivalent or more, preferably 1 equivalent or more, and usually 10 equivalents or less, preferably 5 or less, based on the alkali metal or alkaline earth metal contained in the above-mentioned transesterification catalyst. Below the equivalent. Further, the amount is usually 1 ppm or more, and usually 100 ppm or less, and preferably 20 ppm or less, based on the aromatic polycarbonate resin.

聚碳酸酯樹脂之分子量為任意,可適當選擇而決定,根據溶液黏度換算之黏度平均分子量[Mv]通常為10,000以上,較佳為16,000以上,更佳為18,000以上,又,通常為40,000以下,較佳為30,000以下。藉由將黏度平均分子量設為上述範圍之下限值以上,可更提高本發明之聚碳酸酯樹脂組成物之機械強度,於用於機械強度之要求較高之用途之情形時成為更佳者。另一方面,藉由將黏度平均分子量設為上述範圍之上限值以下,可抑制並改善本發明之聚碳酸酯樹脂組成物之流動性降低,提高成形加工性而容易進行成形加工。再者,亦可混合使用黏度平均分子量不同之2種以上之聚碳酸酯樹脂,於此情形時,亦可混合黏度平均分子量為上述較佳範圍外之聚碳酸酯樹脂。 The molecular weight of the polycarbonate resin is arbitrary, and can be appropriately selected and determined. The viscosity average molecular weight [Mv] in terms of solution viscosity is usually 10,000 or more, preferably 16,000 or more, more preferably 18,000 or more, and usually 40,000 or less. It is preferably 30,000 or less. By setting the viscosity average molecular weight to be equal to or higher than the lower limit of the above range, the mechanical strength of the polycarbonate resin composition of the present invention can be further improved, and it is more preferable when it is used for applications requiring high mechanical strength. . On the other hand, when the viscosity average molecular weight is equal to or less than the upper limit of the above range, the fluidity of the polycarbonate resin composition of the present invention can be suppressed and improved, and the moldability can be improved and the molding process can be easily performed. Further, two or more kinds of polycarbonate resins having different viscosity average molecular weights may be used in combination, and in this case, a polycarbonate resin having a viscosity average molecular weight outside the above preferred range may be mixed.

再者,所謂黏度平均分子量[Mv],意指將二氯甲烷用作溶劑,使用烏式黏度計(ubbelohde viscometer)求出溫度20℃下之極限黏度[η](單位dl/g),根據Schnell之黏度式即η=1.23×10-4Mv0.83而算出之值。又,所謂極限黏度[η],係測定各溶液濃度[C](g/dl)下之比黏度[ηsp],藉由下述數式(1)而算出之值。 Further, the viscosity average molecular weight [Mv] means that methylene chloride is used as a solvent, and the ultimate viscosity [η] (unit: dl/g) at a temperature of 20 ° C is obtained using a Ubbelohde viscometer. The viscosity value of Schnell is η = 1.23 × 10 -4 Mv 0.83 and the value is calculated. In addition, the ultimate viscosity [η] is a value calculated by the following formula (1) by measuring the specific viscosity [η sp ] at each solution concentration [C] (g/dl).

聚碳酸酯樹脂之末端羥基濃度為任意,可適當選擇而決定,通常為1,000 ppm以下,較佳為800 ppm以下,更佳為600 ppm以下。藉此,可更提高本發明之聚碳酸酯樹脂組成物之滯留熱穩定性及色調。又,其下限通常為10 ppm以上,較佳為30 ppm以上,更佳為40 ppm以上。藉此,可抑制分子量之降低,更提高本發明之聚碳酸酯樹脂組成物之機械特性。再者,末端羥基濃度之單位係將相對於聚碳酸酯樹脂之重量之末端羥基之重量以ppm表示者。該測定方法係利用四氯化鈦/乙酸法而進行之比色測定(Macromol.Chem.88 215(1965)中記載之方法)。 The terminal hydroxyl group concentration of the polycarbonate resin is arbitrary, and can be appropriately selected and determined, and is usually 1,000 ppm or less, preferably 800 ppm or less, and more preferably 600 ppm or less. Thereby, the retention heat stability and color tone of the polycarbonate resin composition of the present invention can be further improved. Further, the lower limit is usually 10 ppm or more, preferably 30 ppm or more, and more preferably 40 ppm or more. Thereby, the decrease in molecular weight can be suppressed, and the mechanical properties of the polycarbonate resin composition of the present invention can be further improved. Further, the unit of the terminal hydroxyl group concentration is expressed in ppm with respect to the weight of the terminal hydroxyl group of the weight of the polycarbonate resin. This measurement method is a colorimetric measurement by a titanium tetrachloride/acetic acid method (method described in Macromol. Chem. 88 215 (1965)).

聚碳酸酯樹脂可單獨使用1種,亦可以任意之組合及比率併用2種以上。 The polycarbonate resin may be used singly or in combination of two or more kinds in any combination and in any ratio.

聚碳酸酯樹脂可單獨(所謂單獨聚碳酸酯樹脂,係以並不限定於僅含有聚碳酸酯樹脂之1種之樣態,而包括含有例如單體組成或分子量相互不同之複數種聚碳酸酯樹脂之樣態的意思而使用)使用聚碳酸酯樹脂,亦可組合聚碳酸酯樹脂與其他熱塑性樹脂之合金(混合物)而使用。進而,例如,亦可為了進一步提高難燃性或耐衝擊性,將聚碳酸酯樹脂製成與具有矽氧烷構造之低聚物或聚合物之共聚合體;為了進一步提高熱氧化穩定性或難燃性,製成與具有磷原子之單體、低聚物或聚合物之共聚合體;為了提高熱氧化穩定性,製成與具有二羥基蒽醌構造之單體、低聚物或聚合物之共聚合體;為了改良光學性質,製成與聚苯乙烯等具有烯烴系構造之低聚物或聚合物之共聚合體;及為了提高耐化學品性,製成與聚酯樹脂低聚物或聚合物之共聚合體等以聚碳酸酯樹脂為主體的共聚合體而構成。於與其他熱塑性樹脂組合而使用之情形時,樹脂成分中之聚碳酸酯樹脂之比例較佳為50重量%以上,更佳為60重量%,進而較佳為70重量%以上。 The polycarbonate resin may be used alone (so-called polycarbonate resin, and is not limited to one type containing only a polycarbonate resin, but includes a plurality of polycarbonates having, for example, a monomer composition or a molecular weight different from each other. The polycarbonate resin may be used in combination with an alloy (mixture) of a polycarbonate resin and another thermoplastic resin. Further, for example, in order to further improve flame retardancy or impact resistance, a polycarbonate resin may be formed into a copolymer with an oligomer or a polymer having a decane structure; in order to further improve thermal oxidation stability or difficulty Flammability, made into a copolymer with a monomer, oligomer or polymer having a phosphorus atom; in order to improve thermal oxidative stability, it is made into a monomer, oligomer or polymer having a dihydroxyanthracene structure. a copolymer; in order to improve optical properties, a copolymer having an oligomer or polymer having an olefin structure such as polystyrene; and an oligomer or polymer with a polyester resin for improving chemical resistance The copolymer or the like is composed of a copolymer of a polycarbonate resin as a main component. When it is used in combination with another thermoplastic resin, the ratio of the polycarbonate resin in the resin component is preferably 50% by weight or more, more preferably 60% by weight, still more preferably 70% by weight or more.

又,為了謀求成形品之外觀之提昇或流動性之提高,聚 碳酸酯樹脂亦可含有聚碳酸酯低聚物。該聚碳酸酯低聚物之黏度平均分子量[Mv]通常為1,500以上,較佳為2,000以上,又,通常為9,500以下,較佳為9,000以下。進而,含有之聚碳酸酯低聚物較佳為聚碳酸酯樹脂(含有聚碳酸酯低聚物)之30重量%以下。 In addition, in order to improve the appearance of the molded article or improve the fluidity, the poly The carbonate resin may also contain a polycarbonate oligomer. The polycarbonate oligomer has a viscosity average molecular weight [Mv] of usually 1,500 or more, preferably 2,000 or more, and usually 9,500 or less, preferably 9,000 or less. Further, the polycarbonate oligomer contained is preferably 30% by weight or less of a polycarbonate resin (containing a polycarbonate oligomer).

進而,聚碳酸酯樹脂不僅可為原始原料,亦可為自完成使用之製品再生之聚碳酸酯樹脂(即材料重複利用之聚碳酸酯樹脂)。作為上述完成使用之製品,例如可列舉:光碟等光記錄媒體;導光板;汽車窗玻璃、汽車前照燈配光鏡、風擋等車輛透明構件;水瓶等容器;鏡片;防音壁、玻璃窗、波紋板等建築構件等。又,亦可使用自製品之不合格品、澆道、流道等獲得之粉碎品或將其等熔融所得之顆粒等。 Further, the polycarbonate resin may be not only a raw material but also a polycarbonate resin (i.e., a polycarbonate resin whose material is reused) which is regenerated from the finished product. Examples of the product to be used as described above include an optical recording medium such as a compact disc; a light guide plate; a vehicle transparent member such as an automobile window glass, a car headlight light distribution mirror, and a windshield; a container such as a water bottle; a lens; a soundproof wall and a glass window. Building components such as corrugated sheets. Further, a pulverized product obtained from a defective product, a runner, a flow path, or the like of the product, or a pellet obtained by melting the same may be used.

其中,經再生之聚碳酸酯樹脂較佳為本發明之聚碳酸酯樹脂組成物中所包含之聚碳酸酯樹脂中之80重量%以下,其中更佳為50重量%以下。其原因在於,經再生之聚碳酸酯樹脂受到熱劣化或經時劣化等劣化之可能性較高,因此於多於上述範圍而使用此種聚碳酸酯樹脂之情形時,有降低色相或機械物性之可能性。 Among them, the recycled polycarbonate resin is preferably 80% by weight or less, more preferably 50% by weight or less, based on the polycarbonate resin contained in the polycarbonate resin composition of the present invention. The reason for this is that the recycled polycarbonate resin is highly likely to be deteriorated by thermal deterioration or deterioration over time, and therefore, when such a polycarbonate resin is used in a range larger than the above range, the hue or mechanical properties are lowered. The possibility.

作為本實施樣態中使用之樹脂之特性,於結晶性熱塑性樹脂之情形時,熔點通常為80℃以上,較佳為120℃以上。另一方面,通常為350℃以下,較佳為300℃以下。於非晶性熱塑性樹脂之情形時,玻璃轉移點通常為80℃以上,較佳為120℃以上。另一方面,通常為350℃以下,較佳為300℃以下。藉由為該範圍,而較佳地實施射出成形。 In the case of the crystalline thermoplastic resin, the melting point of the resin used in the present embodiment is usually 80 ° C or higher, preferably 120 ° C or higher. On the other hand, it is usually 350 ° C or lower, preferably 300 ° C or lower. In the case of an amorphous thermoplastic resin, the glass transition point is usually 80 ° C or higher, preferably 120 ° C or higher. On the other hand, it is usually 350 ° C or lower, preferably 300 ° C or lower. By this range, injection molding is preferably carried out.

又,於熱塑性樹脂之情形時,較佳為彈性模數於室溫下為300 MPa以上,更佳為700 MPa以上,進而較佳為800 MPa以上。藉由為該範圍,即便於用於照明器具等之情形時,亦抑制因由點燈引起之溫度上升而導致剛性不足之狀況。 Further, in the case of a thermoplastic resin, the modulus of elasticity is preferably 300 MPa or more at room temperature, more preferably 700 MPa or more, still more preferably 800 MPa or more. By this range, even when it is used for a lighting fixture or the like, the situation in which the rigidity is insufficient due to the temperature rise caused by the lighting is suppressed.

<1-4.透過率調整劑> <1-4. Transmission rate adjuster>

所謂透過率調整劑,係具有與樹脂所具有之折射率不同之折射率之物質,且係可使光分散之物質。此處作為對象之折射率可為可見光區域內之任一波長之折射率,具有代表性的是於可見光區域之任一波 長中折射率差之絕對值為0.005以上。測定方法並無特別限定,可以阿貝之折射率計或YOSHIYAMA等人之液浸法(AEROSOL研究Vol.9,No.1 Spring pp.44-50(1994))等進行測定。藉由使用透過率調整劑,可調節螢光體量,其結果為可調節全光線透過率。作為透過率調整劑,可列舉無機系光透過率調整劑、有機系光透過率調整劑或氣泡。 The transmittance adjusting agent is a substance having a refractive index different from the refractive index of the resin, and is a substance which can disperse light. The refractive index as the object here may be the refractive index of any wavelength in the visible light region, and is representative of any wave in the visible light region. The absolute value of the long-term refractive index difference is 0.005 or more. The measurement method is not particularly limited, and can be measured by an Abbe refractometer or a liquid immersion method by YOSHIYAMA et al. (AEROSOL Research Vol. 9, No. 1 Spring pp. 44-50 (1994)). By using a transmittance adjusting agent, the amount of the phosphor can be adjusted, and as a result, the total light transmittance can be adjusted. Examples of the transmittance adjusting agent include an inorganic light transmittance adjusting agent, an organic light transmittance adjusting agent, and a bubble.

作為無機系光透過率調整劑,例如可使用含有矽、鋁、鈦、鋯、鈣、鎂、鋅及鋇等元素之無機系光透過率調整劑,又,較佳為使用含有由矽、鋁、鈦及鋯所組成之群中之至少1種元素之無機系光透過率調整劑。作為有機系光透過率調整劑材料,可使用丙烯酸系、苯乙烯系、聚醯胺系或者含有矽或氟作為元素之有機系光透過率調整劑,其中較佳為使用丙烯酸系光透過率調整劑或含有矽作為元素之有機系光透過率調整劑。 As the inorganic light transmittance adjusting agent, for example, an inorganic light transmittance adjusting agent containing an element such as cerium, aluminum, titanium, zirconium, calcium, magnesium, zinc or cerium can be used, and it is preferable to use cerium or aluminum. An inorganic light transmittance adjusting agent of at least one element selected from the group consisting of titanium and zirconium. As the organic light transmittance adjusting agent material, an acrylic-based, styrene-based, polyamide-based or organic light-transmitting ratio adjusting agent containing cerium or fluorine as an element can be used. Among them, acrylic light transmittance adjustment is preferably used. An organic light transmittance adjusting agent containing cerium as an element.

作為無機系光透過率調整劑之具體例,可列舉二氧化矽(silica)、白碳、熔融二氧化矽、滑石、氟化鈣或氟化鎂等金屬氟化物、氧化鎂、氧化鋅、氧化鈦、氧化鋁、氧化鋯、氧化硼、氮化硼、氮化鋁、氮化矽、碳酸鈣、碳酸鋇、碳酸鎂、氫氧化鋁、氫氧化鈣、氫氧化鎂、氫氧化鋁、硫酸鋇、矽酸鈣、矽酸鎂、矽酸鋁、矽酸鋁化鈉、矽酸鋅、硫化鋅、玻璃粒子、玻璃纖維、玻璃薄片、雲母、矽灰石、沸石、海泡石、膨潤土、蒙脫石、水滑石、高嶺石、鈦酸鉀等材料。 Specific examples of the inorganic light transmittance adjusting agent include metal fluorides such as silica, white carbon, molten cerium oxide, talc, calcium fluoride or magnesium fluoride, magnesium oxide, zinc oxide, and oxidation. Titanium, aluminum oxide, zirconium oxide, boron oxide, boron nitride, aluminum nitride, tantalum nitride, calcium carbonate, barium carbonate, magnesium carbonate, aluminum hydroxide, calcium hydroxide, magnesium hydroxide, aluminum hydroxide, barium sulfate , calcium citrate, magnesium citrate, aluminum citrate, sodium alumininate, zinc citrate, zinc sulfide, glass particles, glass fiber, glass flakes, mica, apatite, zeolite, sepiolite, bentonite, Mongolia Desulphur, hydrotalcite, kaolinite, potassium titanate and other materials.

該等無機系透過率調整劑亦可為以矽烷偶合劑、鈦酸酯偶合劑、甲基氫聚矽氧烷、聚矽氧油、含脂肪酸之烴化合物等各種表面處理劑進行處理者。該等之中,尤佳為如甲基三甲氧基矽烷、乙基三甲氧基矽烷、辛基三甲氧基矽烷、十二烷基三甲氧基矽烷之烷基三甲氧基矽烷,動黏度於25℃下為5~1萬mm2/s之範圍之甲基氫聚矽氧烷,動黏度於25℃下為5~1萬mm2/s之二甲基聚矽氧油或甲基苯基聚矽氧油,進而較佳為於25℃下之動黏度為10~1000 mm2/s之甲基氫聚矽氧烷。本實施形態中,可使用預先以上述表面處理劑進行處理之透過率調整劑,亦可使用於混練時將表面處理劑直接添加於混練機中而於混練機內進行表面處理之透過率調整劑。 These inorganic transmittance adjusting agents may be treated with various surface treating agents such as a decane coupling agent, a titanate coupling agent, a methyl hydrogen polyoxyalkylene oxide, a polyoxyphthalic acid oil, or a fatty acid-containing hydrocarbon compound. Among them, an alkyltrimethoxydecane such as methyltrimethoxydecane, ethyltrimethoxydecane, octyltrimethoxydecane or dodecyltrimethoxydecane is preferred, and the dynamic viscosity is 25 Methylhydrogenpolyoxane in the range of 5 to 100,000 mm 2 /s at ° C, kinetic viscosity of 5 to 100,000 mm 2 /s of dimethylpolyphthalic acid or methylphenyl at 25 ° C The polyoxygenated oil is further preferably a methyl hydrogen polyoxyalkylene having an kinetic viscosity of 10 to 1000 mm 2 /s at 25 ° C. In the present embodiment, a transmittance adjusting agent which is treated with the surface treating agent in advance may be used, or a transmittance adjusting agent which is used by directly adding a surface treating agent to a kneading machine and performing surface treatment in a kneading machine during kneading may be used. .

作為有機系光透過率調整劑,可列舉苯乙烯系(共)聚合體、丙烯酸系(共)聚合體、矽氧烷系(共)聚合體、倍半矽氧烷衍生物、聚醯胺系(共)聚合體等材料。該等有機系透過率調整劑之分子之部分或全部可交聯,亦可不交聯。此處,所謂「(共)聚合體」,意指「聚合體」及「共聚合體」之兩者。 Examples of the organic light transmittance adjusting agent include a styrene-based (co)polymer, an acrylic (co)polymer, a decane-based (co)polymer, a sesquiterpene derivative, and a polyamine. (total) materials such as polymers. Some or all of the molecules of the organic transmittance adjusting agents may or may not be crosslinked. Here, the term "(co)polymer" means both "aggregate" and "co-aggregate".

作為透過率調整劑,較佳為包含選自由二氧化矽、玻璃、碳酸鈣、氧化鈦、倍半矽氧烷、聚矽氧、氟化鈣、氟化鎂及雲母所組成之群中之至少1種。 The transmittance adjusting agent preferably contains at least one selected from the group consisting of ceria, glass, calcium carbonate, titanium oxide, sesquiterpene oxide, polyfluorene oxide, calcium fluoride, magnesium fluoride, and mica. 1 species.

又,作為透過率調整劑,較佳為莫氏硬度未滿8,進而較佳為未滿7。藉由使用此種硬度之透過率調整劑,抑制波長變換構件之變色,又,不損及容器而不混入雜質。 Further, as the transmittance adjusting agent, the Mohs hardness is preferably less than 8, and further preferably less than 7. By using such a hardness transmittance adjusting agent, discoloration of the wavelength converting member is suppressed, and the container is not damaged, and impurities are not mixed.

又,作為透過率調整劑,較佳為其長徑L與短徑D之比L/D為200以下。藉由使用此種範圍之透過率調整劑,抑制波長變換構件之變色,又,不損及容器而不混入雜質。L/D更佳為50以下。 Further, as the transmittance adjusting agent, the ratio L/D of the major axis L to the minor axis D is preferably 200 or less. By using such a range of transmittance adjusting agent, discoloration of the wavelength converting member is suppressed, and the container is not damaged, and impurities are not mixed. The L/D is preferably 50 or less.

又,於藉由透過率調整劑而調整波長變換構件之透過率時,例如可藉由添加平均粒徑較小之透過率調整劑、添加與波長變換構件之折射率差較大之透過率調整劑、或增加透過率調整劑之添加量而降低波長變換構件之透過率,藉此而進行調整。 Further, when the transmittance of the wavelength conversion member is adjusted by the transmittance adjusting agent, for example, a transmittance adjusting agent having a small average particle diameter can be added, and a transmittance difference between the refractive index difference and the wavelength converting member can be adjusted. The agent or the addition amount of the transmittance adjusting agent is increased to reduce the transmittance of the wavelength conversion member, thereby adjusting.

透過率調整劑之平均粒徑較佳為100 μm以下,更佳為0.1 μm以上且30 μm以下,進而較佳為0.1 μm以上且15 μm以下,進而更佳為1 μm以上且5 μm以下。 The average particle diameter of the transmittance adjusting agent is preferably 100 μm or less, more preferably 0.1 μm or more and 30 μm or less, further preferably 0.1 μm or more and 15 μm or less, and still more preferably 1 μm or more and 5 μm or less.

本實施樣態中,於使用透過率調整劑之情形時,將波長變換構件之合計重量設為100重量%,而通常含有0.1重量%以上,較佳為含有0.3重量%以上。又,通常含有70重量%以下,較佳為含有40重量%以下。 In the case of the present embodiment, when the transmittance adjusting agent is used, the total weight of the wavelength converting member is 100% by weight, and usually 0.1% by weight or more, and preferably 0.3% by weight or more. Further, it is usually contained in an amount of 70% by weight or less, preferably 40% by weight or less.

透過率調整劑係將成形前之樹脂組成物之合計重量設為100重量%,而通常含有0.1重量%以上,較佳為含有0.3重量%以上。又,通常含有70重量%以下,較佳為含有40重量%以下。 The transmittance adjusting agent has a total weight of the resin composition before molding of 100% by weight, and usually 0.1% by weight or more, preferably 0.3% by weight or more. Further, it is usually contained in an amount of 70% by weight or less, preferably 40% by weight or less.

<1-5.其他添加劑> <1-5. Other additives>

作為其他添加劑,可於本實施形態之波長變換構件或樹脂組成物中使用有效量之通常用於樹脂之添加劑。具體而言,可列舉其他熱塑性樹脂、脫模劑、結晶成核劑、抗氧化劑、抗結塊劑、紫外線吸收劑、光穩定劑、可塑劑、熱穩定劑、著色劑、難燃劑、抗靜電劑、防霧劑、表面濕潤改善劑、煅燒輔助劑、滑劑、難燃劑、交聯劑、分散助劑或各種界面活性劑、滑澤劑、水解防止劑、中和劑、加強材、導熱材等。該等可單獨使用1種,亦可混合使用2種以上。 As another additive, an effective amount of an additive generally used for a resin can be used in the wavelength conversion member or the resin composition of the present embodiment. Specific examples thereof include other thermoplastic resins, mold release agents, crystal nucleating agents, antioxidants, anti-caking agents, ultraviolet absorbers, light stabilizers, plasticizers, heat stabilizers, colorants, flame retardants, and anti-wear agents. Electrostatic agent, anti-fogging agent, surface wetting improving agent, calcining auxiliary agent, slip agent, flame retardant, crosslinking agent, dispersing aid or various surfactants, slip agent, hydrolysis preventing agent, neutralizing agent, reinforcing material , heat conductive materials, etc. These may be used alone or in combination of two or more.

<1-5-1.抗氧化劑> <1-5-1. Antioxidant>

作為抗氧化劑之具體例,可列舉:2,6-二-第三丁基-4-羥基甲苯、2,2'-亞甲基雙(4-甲基-6-第三丁基苯酚)、季戊四醇四[3-(3,5-二-第三丁基-4-羥基苯基)丙酸酯]、3,3',3",5,5',5"-六-第三丁基-a,a',a"-(均三甲苯-2,4,6-三基)三-對甲酚、十八烷基-3-(3,5-二-第三丁基-4-羥基苯基)丙酸酯、1,3,5-三[(4-第三丁基-3-羥基-2,6-二甲苯基)甲基]-1,3,5-三-2,4,6(1H,3H,5H)-三酮、1,3,5-三(3,5-二-第三丁基-4-羥基苄基)-1,3,5-三-2,4,6(1H,3H,5H)-三酮、二乙基雙[[3,5-雙(1,1-二甲基乙基)-4-羥基苯基]甲基]膦酸鈣、雙(2,2'-二羥基-3,3'-二-第三丁基-5,5'-二甲基苯基)乙烷、N,N'-己烷-1,6-二基雙[3-(3,5-二-第三丁基-4-羥基苯基丙醯胺等受阻酚系抗氧化劑;亞磷酸十三烷基酯、亞磷酸二苯基癸基酯、四(2,4-二-第三丁基苯基)[1,1-聯苯]-4,4'-二基雙亞膦酸二酯、亞磷酸雙[2,4-雙(1,1-二甲基乙基)-6-甲基苯基]乙酯、雙(2,4-二-第三丁基苯基)季戊四醇二亞磷酸酯等磷系抗氧化劑;3-羥基-5,7-二-第三丁基-呋喃-2-酮與二甲苯之反應生成物等內酯系抗氧化劑;二月桂基硫代二丙酸酯、二硬脂基硫代二丙酸酯等硫系抗氧化劑等。該等抗氧化劑可單獨使用1種,亦可以任意之組合及比率併用2種以上。 Specific examples of the antioxidant include 2,6-di-t-butyl-4-hydroxytoluene and 2,2'-methylenebis(4-methyl-6-tert-butylphenol). Pentaerythritol tetrakis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], 3,3',3",5,5',5"-hexa-t-butyl -a,a',a"-(homotriene-2,4,6-triyl)tri-p-cresol, octadecyl-3-(3,5-di-t-butyl-4- Hydroxyphenyl)propionate, 1,3,5-tris[(4-tert-butyl-3-hydroxy-2,6-dimethylphenyl)methyl]-1,3,5-tri -2,4,6(1H,3H,5H)-trione, 1,3,5-tris(3,5-di-t-butyl-4-hydroxybenzyl)-1,3,5-three -2,4,6(1H,3H,5H)-trione, diethylbis[[3,5-bis(1,1-dimethylethyl)-4-hydroxyphenyl]methyl]phosphine Calcium acid, bis(2,2'-dihydroxy-3,3'-di-t-butyl-5,5'-dimethylphenyl)ethane, N,N'-hexane-1,6 -Dibasic bis[3-(3,5-di-t-butyl-4-hydroxyphenylpropanamide) and other hindered phenolic antioxidants; tridecyl phosphite, diphenyl decyl phosphite , tetrakis(2,4-di-t-butylphenyl)[1,1-biphenyl]-4,4'-diylbisphosphonite diester, bisphosphite bis[2,4-double (1 Phosphate-based antioxidants such as 1-methylethyl)-6-methylphenyl]ethyl ester and bis(2,4-di-tert-butylphenyl)pentaerythritol diphosphite; 3-hydroxy- a lactone-based antioxidant such as a reaction product of 5,7-di-t-butyl-furan-2-one with xylene; dilauryl thiodipropionate, distearyl thiodipropionate A sulfur-based antioxidant, etc. These antioxidants may be used alone or in combination of two or more kinds in any combination and in any ratio.

抗氧化劑之使用量於不明顯損及本發明之效果之範圍內為任意,樹脂組成物中,通常為100重量ppm以上且50000重量ppm以下。若低於該範圍之下限,則有抗氧化劑之效果變小之虞,若超過上限,則有抗氧化劑滲出反而引起著色之虞。 The amount of the antioxidant to be used is not particularly limited as long as the effect of the present invention is not significantly impaired, and the resin composition is usually 100 ppm by weight or more and 50,000 ppm by weight or less. If it is less than the lower limit of the range, the effect of the antioxidant is small, and if it exceeds the upper limit, the antioxidant bleeds out and causes coloration.

<1-5-2.脫模劑> <1-5-2. Release agent>

於使用非晶性樹脂之情形時,較佳為添加脫模劑。作為脫模劑,可列舉高級脂肪酸、一元或多元醇之高級脂肪酸酯、蜜蠟等天然動物系蠟、巴西棕櫚蠟等天然植物系蠟、石蠟等天然石油系蠟、褐煤蠟等天然石炭系蠟、烯烴系蠟、聚矽氧油、有機聚矽氧烷等,特佳為高級脂肪酸、一元或多元醇之高級脂肪酸酯。 In the case of using an amorphous resin, it is preferred to add a release agent. Examples of the release agent include higher fatty acid esters of higher fatty acids, monohydric or polyhydric alcohols, natural animal waxes such as beeswax, natural plant waxes such as carnauba wax, natural petroleum waxes such as paraffin wax, and natural charcoal systems such as montan wax. A wax, an olefin wax, a polyoxygenated oil, an organic polyoxyalkylene or the like is particularly preferably a higher fatty acid ester of a higher fatty acid, a monohydric or a polyhydric alcohol.

作為高級脂肪酸酯,較佳為經取代或未經取代之碳數1~碳數20之一元或多元醇與經取代或未經取代之碳數10~碳數30之飽和脂肪酸之部分酯或全酯。作為該一元或多元醇與飽和脂肪酸之部分酯或全酯,可列舉:硬脂酸單甘油酯、硬脂酸二甘油酯、硬脂酸三甘油酯、硬脂酸單山梨醇酯、硬脂酸硬脂基酯、二十二烷酸單甘油酯、二十二烷酸二十二烷基酯、季戊四醇單硬脂酸酯、季戊四醇四硬脂酸酯、季戊四醇四壬酸酯、丙二醇單硬脂酸酯、硬脂酸硬脂基酯、棕櫚酸棕櫚基酯、硬脂酸丁基酯、月桂酸甲酯、棕櫚酸異丙酯、聯苯雙酚酯、山梨醇酐單硬脂酸酯、硬脂酸2-乙基己基酯等。其中,較佳地使用硬脂酸單甘油酯、硬脂酸三甘油酯、季戊四醇四硬脂酸酯、二十二烷酸二十二烷基酯。 As the higher fatty acid ester, a substituted or unsubstituted carbon number of 1 to 20 carbon atoms or a partial ester of a substituted or unsubstituted carbonic acid having 10 to 30 carbon atoms or Full ester. As a partial ester or a full ester of the monohydric or polyhydric alcohol and a saturated fatty acid, stearic acid monoglyceride, stearic acid diglyceride, stearic acid triglyceride, stearic acid monosorbate, and stearin may be mentioned. Acid stearyl ester, behenic acid monoglyceride, behenyl behenate, pentaerythritol monostearate, pentaerythritol tetrastearate, pentaerythritol tetradecanoate, propylene glycol single hard Fatty acid ester, stearyl stearate, palmityl palmitate, butyl stearate, methyl laurate, isopropyl palmitate, biphenyl bisphenolate, sorbitan monostearate , 2-ethylhexyl stearate, and the like. Among them, stearic acid monoglyceride, stearic acid triglyceride, pentaerythritol tetrastearate, and behenyl behenate are preferably used.

作為高級脂肪酸,較佳為經取代或未經取代之碳數10~碳數30之飽和脂肪酸。作為此種飽和脂肪酸,可列舉肉豆蔻酸、月桂酸、棕櫚酸、硬脂酸、二十二烷酸等。 As the higher fatty acid, a substituted or unsubstituted saturated fatty acid having 10 to 30 carbon atoms is preferred. Examples of such a saturated fatty acid include myristic acid, lauric acid, palmitic acid, stearic acid, and behenic acid.

該等脫模劑可單獨使用1種,亦可混合使用2種以上。該脫模劑之含量於樹脂組成物中較佳為0.0001重量%以上,進而較佳為0.01重量%以上,特佳為0.1重量%以上,另一方面,較佳為1重量%以下,進而較佳為0.7重量%以下,特佳為0.5重量%以下。 These release agents may be used alone or in combination of two or more. The content of the release agent is preferably 0.0001% by weight or more, more preferably 0.01% by weight or more, even more preferably 0.1% by weight or more, and particularly preferably 1% by weight or less, and more preferably the resin composition. It is preferably 0.7% by weight or less, and particularly preferably 0.5% by weight or less.

<1-5-3.結晶成核劑> <1-5-3. Crystal nucleating agent>

於使用結晶性樹脂之情形時,較佳為添加結晶成核劑。作為結晶成核劑之具體例,作為無機系成核劑,可列舉滑石、高嶺石、蒙脫石、合成雲母、黏土、沸石、二氧化矽、石墨、碳黑、氧化鋅、氧化鎂、氧化鈦、硫化鈣、氮化硼、碳酸鈣、硫酸鋇、氧化鋁、氧化釹及膦酸苯酯之金屬鹽等。又,該等無機系成核劑亦可以有機物進行改質,以 提高組成物中之分散性。 In the case of using a crystalline resin, it is preferred to add a crystallization nucleating agent. Specific examples of the crystal nucleating agent include, as an inorganic nucleating agent, talc, kaolinite, montmorillonite, synthetic mica, clay, zeolite, cerium oxide, graphite, carbon black, zinc oxide, magnesium oxide, and oxidation. Metal salts of titanium, calcium sulfide, boron nitride, calcium carbonate, barium sulfate, aluminum oxide, cerium oxide and phenyl phosphonate. Moreover, the inorganic nucleating agents can also be modified by organic matter to Improve the dispersion in the composition.

另一方面,作為有機系成核劑,可列舉:苯甲酸鈉、苯甲酸鉀、苯甲酸鋰、苯甲酸鈣、苯甲酸鎂、苯甲酸鋇、對苯二甲酸鋰、對苯二甲酸鈉、對苯二甲酸鉀、草酸鈣、月桂酸鈉、月桂酸鉀、肉豆蔻酸鈉、肉豆蔻酸鉀、肉豆蔻酸鈣、二十八酸鈉、二十八酸鈣、硬脂酸鈉、硬脂酸鉀、硬脂酸鋰、硬脂酸鈣、硬脂酸鎂、硬脂酸鋇、褐煤酸鈉、褐煤酸鈣、甲苯甲酸鈉、水楊酸鈉、水楊酸鉀、水楊酸鋅、二苯甲酸鋁、二苯甲酸鉀、二苯甲酸鋰、β-萘二甲酸鈉、環己烷羧酸鈉等有機羧酸金屬鹽;對甲苯磺酸鈉、磺基間苯二甲酸鈉等有機磺酸鹽;硬脂醯胺、伸乙基雙月桂醯胺、棕櫚醯胺、羥基硬脂醯胺、芥子醯胺、1,3,5-苯三甲酸三(第三丁基醯胺)等羧醯胺;低密度聚乙烯、高密度聚乙烯、聚丙烯、聚異丙烯、聚丁烯、聚-4-甲基戊烯、聚乙烯環烷烴、聚乙烯三烷基矽烷、高熔點聚乳酸等聚合物;乙烯-丙烯酸或甲基丙烯酸共聚物之鈉鹽、苯乙烯-順丁烯二酸酐共聚物之鈉鹽等具有羧基之聚合體之鈉鹽或鉀鹽(即離子聚合物);亞苄基山梨醇及其衍生物、鈉-2,2'-亞甲基雙(4,6-二-第三丁基苯基)磷酸酯等磷化合物金屬鹽;及2,2-甲基雙(4,6-二-第三丁基苯基)鈉;聚乙烯蠟等。 On the other hand, examples of the organic nucleating agent include sodium benzoate, potassium benzoate, lithium benzoate, calcium benzoate, magnesium benzoate, bismuth benzoate, lithium terephthalate, sodium terephthalate, and benzene. Potassium diformate, calcium oxalate, sodium laurate, potassium laurate, sodium myristate, potassium myristate, calcium myristate, sodium octadecanoate, calcium octadecanoate, sodium stearate, stearic acid Potassium, lithium stearate, calcium stearate, magnesium stearate, barium stearate, sodium montanate, calcium montanate, sodium toluene, sodium salicylate, potassium salicylate, zinc salicylate, diphenyl An organic carboxylic acid metal salt such as aluminum formate, potassium dibenzoate, lithium dibenzoate, sodium β-naphthalate or sodium cyclohexanecarboxylate; organic sulfonate such as sodium p-toluenesulfonate or sodium sulfoisophthalate; Carboxamide which is stearylamine, exoethyl dilaurosamine, palm amide, hydroxystearylamine, mustard amide, 1,3,5-benzenetricarboxylic acid tris(t-butyl decylamine); Low density polyethylene, high density polyethylene, polypropylene, polyisopropene, polybutene, poly-4-methylpentene, polyethylene cycloalkane, polyethylene trialkyl a polymer such as an alkane or a high melting point polylactic acid; a sodium salt of a polymer having a carboxyl group such as a sodium salt of an ethylene-acrylic acid or methacrylic acid copolymer; a sodium salt of a styrene-maleic anhydride copolymer; Ionic polymer); benzylidene sorbitol and its derivatives, sodium metal salt of phosphorus compound such as sodium-2,2'-methylenebis(4,6-di-t-butylphenyl) phosphate; , 2-methylbis(4,6-di-t-butylphenyl) sodium; polyethylene wax, and the like.

成核劑之平均粒徑於不明顯損及本發明之效果之範圍內為任意。較理想為,通常為50 μm以下,較佳為10 μm以下。成核劑之較佳調配量於樹脂組成物中通常為0.01重量%以上且5重量%以下。 The average particle diameter of the nucleating agent is arbitrary within a range that does not significantly impair the effects of the present invention. More preferably, it is usually 50 μm or less, preferably 10 μm or less. The preferred amount of the nucleating agent is usually 0.01% by weight or more and 5% by weight or less based on the resin composition.

<1-5-4.光穩定劑> <1-5-4. Light stabilizer>

作為光穩定劑,可列舉:癸二酸雙(2,2,6,6-四甲基-1(辛基氧基)-4-哌啶基)酯、1,1-二甲基乙基氫過氧化物與辛烷之反應生成物、雙(1,2,2,6,6-五甲基-4-哌啶基)[[3,5-雙(1,1-二甲基乙基)-4-羥基苯基]甲基]丁基丙二酸酯、雙(1,2,2,6,6-五甲基-4-哌啶基)癸二酸酯、1,2,2,6,6-五甲基-4-哌啶基癸二酸甲酯、雙(2,2,6,6-四甲基-4-哌啶基)癸二酸酯、1-[2-[3-(3,5-二-第三丁基-4-羥基苯基)丙醯氧基]乙基]-4-[3-(3,5-二-第三丁基-4-羥基苯基)丙醯氧基]-2,2,6,6-四甲基哌啶、聚[[6-(1,1,3,3-四甲 基丁基)胺基-1,3,5-三-2,4-二基][(2,2,6,6-四甲基-4-哌啶基)亞胺基]六亞甲基{(2,2,6,6-四甲基-4-哌啶基)亞胺基}]等受阻胺系穩定劑。 As the light stabilizer, bis(2,2,6,6-tetramethyl-1(octyloxy)-4-piperidyl)ester, 1,1-dimethylethyl phthalate may be mentioned. Reaction product of hydroperoxide and octane, bis(1,2,2,6,6-pentamethyl-4-piperidinyl)[[3,5-bis(1,1-dimethyl) 4-hydroxyphenyl]methyl]butyl malonate, bis(1,2,2,6,6-pentamethyl-4-piperidyl)sebacate, 1,2, Methyl 2,6,6-pentamethyl-4-piperidinyl sebacate, bis(2,2,6,6-tetramethyl-4-piperidyl)sebacate, 1-[2 -[3-(3,5-di-t-butyl-4-hydroxyphenyl)propanoxy]ethyl]-4-[3-(3,5-di-t-butyl-4- Hydroxyphenyl)propoxycarbonyl]-2,2,6,6-tetramethylpiperidine, poly[[6-(1,1,3,3-tetramethylbutyl)amino-1,3 , 5-three -2,4-diyl][(2,2,6,6-tetramethyl-4-piperidinyl)imido]hexamethylene {(2,2,6,6-tetramethyl-) A hindered amine stabilizer such as 4-piperidinyl)imido}.

光穩定劑可單獨使用1種,亦可以任意之組合及比率併用2種以上。 The light stabilizer may be used singly or in combination of two or more kinds in any combination and in any ratio.

進而,光穩定劑之使用量於樹脂組成物中通常為0.1重量%以上且5重量%以下。 Further, the amount of the light stabilizer used is usually 0.1% by weight or more and 5% by weight or less based on the resin composition.

<1-5-5.紫外線吸收劑> <1-5-5. UV absorber>

作為紫外線吸收劑,除氧化鈰、氧化鋅等無機紫外線吸收劑以外,可列舉苯并三唑化合物、二苯甲酮化合物、三化合物等有機紫外線吸收劑。該等之中,較佳為選自苯并三唑化合物、2-(4,6-二苯基-1,3,5-三-2-基)-5-[(己基)氧基]-苯酚、2-[4,6-雙(2,4-二甲基苯基)-1,3,5-三-2-基]-5-(辛氧基)苯酚、2,2'-(1,4-伸苯基)雙[4H-3,1-苯并-4-酮]、[(4-甲氧基苯基)-亞甲基]-丙二酸-二甲酯之群中之至少1種。 Examples of the ultraviolet absorber include a benzotriazole compound, a benzophenone compound, and the like, in addition to an inorganic ultraviolet absorber such as cerium oxide or zinc oxide. An organic ultraviolet absorber such as a compound. Among these, it is preferably selected from the group consisting of a benzotriazole compound, 2-(4,6-diphenyl-1,3,5-three -2-yl)-5-[(hexyl)oxy]-phenol, 2-[4,6-bis(2,4-dimethylphenyl)-1,3,5-three 2-yl]-5-(octyloxy)phenol, 2,2'-(1,4-phenylene)bis[4H-3,1-benzo At least one of the group consisting of -4-keto] and [(4-methoxyphenyl)-methylene]-malonic acid-dimethyl ester.

作為苯并三唑化合物之具體例,可列舉甲基-3-[3-第三丁基-5-(2H-苯并三唑-2-基)-4-羥基苯基]丙酸酯-聚乙二醇之縮合物。又,作為其他苯并三唑化合物之具體例,可列舉:2-雙(5-甲基-2-羥基苯基)苯并三唑、2-(3,5-二-第三丁基-2-羥基苯基)苯并三唑、2-(3',5'-二-第三丁基-2'-羥基苯基)-5-氯苯并三唑、2-(3-第三丁基5-甲基-2-羥基苯基)-5-氯苯并三唑、2-(2'-羥基-5'-第三辛基苯基)苯并三唑、2-(3,5-二-第三戊基-2-羥基苯基)苯并三唑、2-[2-羥基-3,5-雙(α,α-二甲基苄基)苯基]-2H-苯并三唑、2,2'-亞甲基-雙[4-(1,1,3,3-四甲基丁基)-6-(2N-苯并三唑2-基)苯酚][甲基-3-[3-第三丁基-5-(2H-苯并三唑-2-基)-4-羥基苯基]丙酸酯-聚乙二醇]縮合物等。 Specific examples of the benzotriazole compound include methyl-3-[3-t-butyl-5-(2H-benzotriazol-2-yl)-4-hydroxyphenyl]propionate- a condensate of polyethylene glycol. Further, specific examples of the other benzotriazole compound include 2-bis(5-methyl-2-hydroxyphenyl)benzotriazole and 2-(3,5-di-t-butyl- 2-hydroxyphenyl)benzotriazole, 2-(3',5'-di-tert-butyl-2'-hydroxyphenyl)-5-chlorobenzotriazole, 2-(3-third Butyl 5-methyl-2-hydroxyphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-5'-t-octylphenyl)benzotriazole, 2-(3, 5-di-t-pentyl-2-hydroxyphenyl)benzotriazole, 2-[2-hydroxy-3,5-bis(α,α-dimethylbenzyl)phenyl]-2H-benzene And triazole, 2,2'-methylene-bis[4-(1,1,3,3-tetramethylbutyl)-6-(2N-benzotriazol-2-yl)phenol][A Alkyl-3-[3-t-butyl-5-(2H-benzotriazol-2-yl)-4-hydroxyphenyl]propionate-polyethylene glycol] condensate or the like.

紫外線吸收劑可單獨使用1種,亦可以任意之組合及比率併用2種以上。 The ultraviolet absorber may be used singly or in combination of two or more kinds in any combination and in any ratio.

又,紫外線吸收劑之使用量係將樹脂組成物之合計重量設為100重量%,通常為100 ppm以上且5重量%以下。 Further, the amount of the ultraviolet absorber used is 100% by weight, and usually 100 ppm or more and 5% by weight or less, based on the total weight of the resin composition.

<1-5-6.難燃劑> <1-5-6. Flame Retardant>

作為難燃劑,可列舉有機鹵素系、磷系、有機酸金屬鹽系、聚矽 氧系、氮化合物系之有機難燃劑及無機難燃劑,作為難燃助劑,可列舉氟樹脂系、銻化合物系難燃助劑。亦可併用難燃劑及難燃助劑,又,亦可組合複數種而使用。其中較佳為磷系難燃劑、有機酸金屬鹽系難燃劑、氟樹脂系難燃助劑。 Examples of the flame retardant include an organic halogen system, a phosphorus system, an organic acid metal salt system, and a polyfluorene. An organic flame retardant and an inorganic flame retardant which are oxygen-based and nitrogen-based compounds, and examples of the flame retardant auxiliary include a fluororesin-based compound and a bismuth compound-based flame retardant auxiliary. It is also possible to use a combination of a flame retardant and a flame retardant, or a combination of a plurality of types. Among them, a phosphorus-based flame retardant, an organic acid metal salt-based flame retardant, and a fluororesin-based flame retardant auxiliary agent are preferable.

作為有機鹵素化合物,例如可列舉溴化聚碳酸酯、溴化環氧樹脂、溴化苯氧基樹脂、溴化聚苯醚樹脂、溴化聚苯乙烯樹脂、溴化雙酚A、聚丙烯酸五溴苄酯等。 Examples of the organic halogen compound include brominated polycarbonate, brominated epoxy resin, brominated phenoxy resin, brominated polyphenylene ether resin, brominated polystyrene resin, brominated bisphenol A, and polyacrylic acid. Bromobenzyl ester and the like.

作為磷系難燃劑,可列舉芳香族磷酸酯、聚磷酸、聚磷酸銨、紅磷或於主鏈具有磷原子與氮原子之鍵之磷氮基化合物。作為磷酸酯系難燃劑之具體例,可列舉:磷酸三苯酯、間苯二酚雙(二(二甲苯)磷酸酯)、對苯二酚雙(二(二甲苯)磷酸酯)、4,4'-聯苯酚雙(二(二甲苯)磷酸酯)、雙酚A雙(二(二甲苯)磷酸酯)、間苯二酚雙(磷酸二苯酯)、對苯二酚雙(磷酸二苯酯)、4,4'-聯苯酚雙(磷酸二苯酯)、雙酚A雙(磷酸二苯酯)等。作為有機酸金屬鹽系難燃劑,較佳為有機磺酸金屬鹽,特佳為含氟之有機磺酸金屬鹽,具體而言可例示全氟丁磺酸鉀等。作為氮系化合物,例如可列舉三聚氰胺、三聚氰酸、三聚氰酸三聚氰胺等。作為無機難燃劑,例如可列舉氫氧化鋁、氫氧化鎂、矽化合物、硼化合物等。作為氟系難燃助劑,較佳為氟烯烴樹脂,可例示具有纖維構造之四氟乙烯樹脂。氟系難燃助劑既可為粉末狀,亦可為分散液狀,亦可為將氟樹脂以其他樹脂被覆之粉末狀,可為任一形態。作為銻化合物系難燃助劑,例如可列舉三氧化二銻、五氧化銻、銻酸鈉等。 Examples of the phosphorus-based flame retardant include an aromatic phosphate, a polyphosphoric acid, ammonium polyphosphate, red phosphorus, or a phosphorus-nitrogen compound having a bond between a phosphorus atom and a nitrogen atom in the main chain. Specific examples of the phosphate-based flame retardant include triphenyl phosphate, resorcinol bis(di(xylene) phosphate), hydroquinone bis(di(xylene) phosphate), and 4 , 4'-biphenol bis(di(xylene) phosphate), bisphenol A bis(di(xylene) phosphate), resorcinol bis(diphenyl phosphate), hydroquinone bis (phosphoric acid) Diphenyl ester), 4,4'-biphenol bis(diphenyl phosphate), bisphenol A bis(diphenyl phosphate), and the like. The organic acid metal salt-based flame retardant is preferably an organic sulfonic acid metal salt, particularly preferably a fluorine-containing organic sulfonic acid metal salt, and specific examples thereof include potassium perfluorobutanesulfonate. Examples of the nitrogen-based compound include melamine, cyanuric acid, and melamine cyanurate. Examples of the inorganic flame retardant include aluminum hydroxide, magnesium hydroxide, a ruthenium compound, and a boron compound. The fluorine-based flame retardant auxiliary agent is preferably a fluoroolefin resin, and a tetrafluoroethylene resin having a fiber structure can be exemplified. The fluorine-based flame retardant auxiliary may be in the form of a powder or a dispersion, or may be in the form of a powder in which the fluororesin is coated with another resin, and may be in any form. Examples of the antimony compound-based flame retardant auxiliary include antimony trioxide, antimony pentoxide, and sodium antimonate.

該等難燃劑、難燃助劑之調配比率只要調配為達成所需之難燃級別所必需之量即可,通常較佳為,於樹脂組成物中,於磷系難燃劑之情形時以1~20重量%之範圍,於有機酸金屬鹽之情形時為0.01~1重量%之範圍,於氟樹脂系難燃助劑之情形時為0.01~1重量%之範圍調配。可於上述範圍內使用1種或2種以上難燃劑、難燃助劑。若少於該範圍,則不易產生難燃性之改良效果,若多於該範圍,則有熱穩定性、機械特性降低之傾向,故而欠佳。再者,難燃級別例如可藉由以UL94為代表之燃燒試驗等而判定。 The blending ratio of the flame retardant and the flame retardant auxiliary may be adjusted to an amount necessary to achieve a desired flame retardancy level, and is usually preferably in the case of a phosphorus-based flame retardant in the resin composition. In the range of 1 to 20% by weight, in the case of the organic acid metal salt, it is in the range of 0.01 to 1% by weight, and in the case of the fluororesin-based flame retardant auxiliary agent, it is in the range of 0.01 to 1% by weight. One type or two or more types of flame retardant and flame retardant auxiliary can be used in the above range. If it is less than this range, the effect of improving the flame retardancy is less likely to occur, and if it is more than this range, thermal stability and mechanical properties tend to be lowered, which is not preferable. Further, the flame retardance level can be determined, for example, by a combustion test represented by UL94 or the like.

<2.波長變換構件之製造方法> <2. Method of Manufacturing Wavelength Conversion Member>

製造第二實施樣態之波長變換構件之方法之特徵在於:包括混合樹脂與螢光體之步驟及使藉由該步驟而獲得之混合物成形之步驟,且於惰性氣體環境下進行上述混合步驟及/或上述成形步驟。該等步驟均無特別限定,只要按照慣例而製造即可。 The method of manufacturing the wavelength conversion member of the second embodiment is characterized by comprising the steps of mixing a resin and a phosphor and forming a mixture obtained by the step, and performing the above mixing step under an inert gas atmosphere and / or the above forming step. These steps are not particularly limited as long as they are manufactured according to the conventional practice.

關於混合樹脂與螢光體之步驟,例如,為了製造調配有樹脂與螢光體、較佳為透過率調整劑及視需要而調配之其他添加劑的波長變換構件,可使用單軸或雙軸擠出機作為混練機。樹脂與包含螢光體、透過率調整劑之其他添加劑可自一處一併供給,亦可於供給樹脂後依序供給螢光體等其他調配劑。又,亦可預先混合並混練選自各成分之2種以上之成分。尤其,螢光體較佳為與其他粉末成分混合後供給。再者,擠出機亦可為具備可脫揮揮發成分之通風口者。 Regarding the step of mixing the resin and the phosphor, for example, in order to manufacture a wavelength converting member provided with a resin and a phosphor, preferably a transmittance adjusting agent, and other additives formulated as needed, uniaxial or biaxial extrusion may be used. Take the machine as a mixing machine. The resin and the other additives including the phosphor and the transmittance adjusting agent may be supplied from one place at a time, or other additives such as a phosphor may be sequentially supplied after the resin is supplied. Further, two or more components selected from the respective components may be mixed and kneaded in advance. In particular, the phosphor is preferably supplied after being mixed with other powder components. Further, the extruder may be a vent having a volatility volatile component.

又,螢光體及透過率調整劑亦可藉由第三成分而實施表面處理。關於使藉由上述混合步驟而獲得之混合物成形之步驟,可於上述混練後藉由加壓成形或射出成形、中空成形、擠出成形、壓縮成形、均衡加壓成形、轉移成形、旋轉成形等方法而成形。該等之中,若考慮對發光裝置或照明裝置之應用性,則就可成形之波長變換構件之形狀自由度之觀點而言,較佳為藉由射出成形。 Further, the phosphor and the transmittance adjusting agent may be subjected to surface treatment by the third component. The step of molding the mixture obtained by the mixing step may be followed by press molding or injection molding, hollow molding, extrusion molding, compression molding, equalization pressure molding, transfer molding, rotational molding, or the like after the kneading. Formed by the method. Among these, in consideration of the applicability to the light-emitting device or the illumination device, it is preferable to perform injection molding from the viewpoint of the degree of freedom of shape of the formable wavelength conversion member.

作為射出成形,包括對聚矽氧等熱硬化性樹脂之反應射出(RIM,Reaction Injection Molding)成形及液體注射(LIM,Liquid Injection Molding)成形。作為對於一般之熱塑性樹脂之射出成形,藉由對樹脂組成物進行加溫而使其熔融,藉由將熔融之樹脂組成物射出至模具而成形。又,亦可以任意之比率乾摻組成物之調配不同之2種以上顆粒並進行供給,於射出成形機內熔融混合而成形。熔融之情形之溫度於非晶性樹脂之情形時較佳為玻璃轉移點以上之溫度,於結晶性樹脂之情形時較佳為熔點以上之溫度,例如為150℃以上,較佳為170℃以上。於成形溫度過高之情形時有成形體著色之情況,因此較佳為於170℃以上且320℃以下之溫度下進行成形。 The injection molding includes RIM (Reaction Injection Molding) molding and liquid injection (LIM) molding for a thermosetting resin such as polyfluorene oxide. In the injection molding of a general thermoplastic resin, the resin composition is melted by heating, and the molten resin composition is molded into a mold. Further, two or more kinds of different types of particles may be blended and blended in an arbitrary ratio, and supplied, and melt-mixed and molded in an injection molding machine. The temperature at the time of melting is preferably a temperature higher than the glass transition point in the case of an amorphous resin, and preferably a temperature higher than the melting point in the case of a crystalline resin, for example, 150 ° C or higher, preferably 170 ° C or higher. . When the molding temperature is too high, the molded body is colored. Therefore, it is preferably molded at a temperature of 170 ° C or more and 320 ° C or less.

再者,若射出成形使用附有熱流道之射出成形裝置,則可減少澆 道流道之損耗,故而較佳。 Furthermore, if the injection molding device with the hot runner is used for injection molding, the pouring can be reduced. The loss of the channel is preferred.

成形體只要為具有成為白色LED發光裝置中之發光面之面狀構造之形狀,則可為任意形狀。此時,波長變換構件亦可為可不具有保持構件而以單體保持其形態之樣態。但是,由此波長變換構件需要某種程度之厚度。該情形時之波長變換構件之厚度較佳為0.3 mm以上且5 mm以下,更佳為0.5 mm以上且3 mm以下。 The molded body may have any shape as long as it has a planar structure that is a light-emitting surface in the white LED light-emitting device. At this time, the wavelength conversion member may be in a state in which the shape is maintained by the monomer without the holding member. However, the wavelength conversion member requires a certain thickness. In this case, the thickness of the wavelength converting member is preferably 0.3 mm or more and 5 mm or less, more preferably 0.5 mm or more and 3 mm or less.

又,本發明之波長變換構件係具有包含螢光體及保持該螢光體之樹脂之面狀構造者,該面狀構造之至少一部分之全光線透過率只要為30%以上,較佳為42%以上,更佳為45%以上,進而較佳為47%以上,另一方面為70%以下,較佳為60%以下,更佳為55%以下之範圍內,則可為單層構造,亦可為2層以上之多層積層構造。 Further, the wavelength conversion member of the present invention has a planar structure including a phosphor and a resin for holding the phosphor, and at least a part of the planar structure has a total light transmittance of 30% or more, preferably 42 More preferably, it is a single layer structure, more preferably 45% or more, further preferably 47% or more, and on the other hand, 70% or less, preferably 60% or less, more preferably 55% or less. It can also be a multi-layered structure of two or more layers.

又,該面狀構造之主要部亦可為全光線透過率為30%以上,較佳為42%以上,更佳為45%以上,進而較佳為47%,另一方面為70%以下,較佳為60%以下,更佳為55%以下之範圍內之情形。進而,表面可為鏡面,亦可具有褶皺等微細構造,亦可於外表面實施硬塗、印刷等。 Further, the main portion of the planar structure may have a total light transmittance of 30% or more, preferably 42% or more, more preferably 45% or more, still more preferably 47%, and on the other hand, 70% or less. It is preferably 60% or less, more preferably 55% or less. Further, the surface may be a mirror surface, or may have a fine structure such as wrinkles, or may be hard coated, printed, or the like on the outer surface.

混合上述樹脂與螢光體之步驟及使藉由該步驟而獲得之混合物成形之步驟時之環境並無特別限定,較佳為於惰性氣體環境下進行,更佳為於氮氣環境下進行。於使用聚芳酯樹脂、環烯烴共聚物樹脂等之情形時,藉由於氮氣環境下進行,尤其發光效率上升。又,於以玻璃轉移溫度Tg為150℃以上之樹脂且成形溫度為300℃以上之情形時,發光效率提高。 The environment in which the resin and the phosphor are mixed and the step of forming the mixture obtained by the step is not particularly limited, and it is preferably carried out under an inert gas atmosphere, more preferably under a nitrogen atmosphere. When a polyarylate resin, a cycloolefin copolymer resin or the like is used, the luminous efficiency is particularly increased by the nitrogen atmosphere. In addition, when the glass transition temperature Tg is 150 ° C or more and the molding temperature is 300 ° C or more, the luminous efficiency is improved.

<3.發光裝置> <3. Light-emitting device>

本發明之第三實施樣態係具備半導體發光元件及第一或第二實施樣態之波長變換構件之發光裝置。 A third embodiment of the present invention is a light-emitting device including a semiconductor light-emitting element and a wavelength conversion member of the first or second embodiment.

本實施形態之發光裝置係至少含有藍色半導體發光元件及變換藍色光之波長之波長變換構件即本發明之第一或第二實施樣態之波長變換構件者。藍色半導體發光元件與本發明之第一或第二實施樣態之波長變換構件可密接,亦可分離,其間可具備透明樹脂,亦可具有空間。 較佳為如圖1中作為模式圖所示於發光元件與該波長變換構件之間具有空間之構造。 The light-emitting device of the present embodiment is a wavelength conversion member of the first or second embodiment of the present invention which contains at least a blue semiconductor light-emitting device and a wavelength conversion member that converts the wavelength of blue light. The blue semiconductor light-emitting element may be in close contact with the wavelength conversion member of the first or second embodiment of the present invention, or may be separated, and may have a transparent resin or a space. Preferably, as shown in the schematic diagram of FIG. 1, there is a space between the light-emitting element and the wavelength conversion member.

以下,使用圖1及圖2說明其構成。 Hereinafter, the configuration will be described with reference to FIGS. 1 and 2 .

圖1係本發明之第三實施形態之發光裝置之模式圖。 Fig. 1 is a schematic view showing a light-emitting device according to a third embodiment of the present invention.

發光裝置10中,作為其構成構件,至少含有藍色半導體發光元件1及波長變換構件3。藍色半導體發光元件1係發出用以激發波長變換構件3中所含有之螢光體之激發光。 In the light-emitting device 10, at least the blue semiconductor light-emitting element 1 and the wavelength conversion member 3 are included as constituent members. The blue semiconductor light-emitting element 1 emits excitation light for exciting the phosphor contained in the wavelength conversion member 3.

藍色半導體發光元件1通常發出峰波長為425 nm~475 nm之激發光,較佳為發出峰波長為430 nm~470 nm之激發光。藍色半導體發光元件1之數量可根據裝置所必需之激發光之強度而適當設定。 The blue semiconductor light-emitting element 1 generally emits excitation light having a peak wavelength of 425 nm to 475 nm, preferably an excitation light having a peak wavelength of 430 nm to 470 nm. The number of the blue semiconductor light-emitting elements 1 can be appropriately set in accordance with the intensity of the excitation light necessary for the device.

另一方面,可使用紫色半導體發光元件代替藍色半導體發光元件1。紫色半導體發光元件通常發出峰波長為390 nm~425 nm之激發光,較佳為發出峰波長為395~415 nm之激發光。 On the other hand, a purple semiconductor light emitting element can be used instead of the blue semiconductor light emitting element 1. The violet semiconductor light-emitting element generally emits excitation light having a peak wavelength of 390 nm to 425 nm, preferably an excitation light having a peak wavelength of 395 to 415 nm.

藍色半導體發光元件1安裝於配線基板2之晶片安裝面2a。於配線基板2形成用以對該等藍色半導體發光元件1供給電極之配線圖案(未圖示),構成電路。圖1中顯示為於配線基板2載置有波長變換構件3,但並不限定於此,亦可配線基板2與波長變換構件3經由其他構件而配置。 The blue semiconductor light emitting element 1 is mounted on the wafer mounting surface 2a of the wiring substrate 2. A wiring pattern (not shown) for supplying electrodes to the blue semiconductor light-emitting elements 1 is formed on the wiring substrate 2 to constitute a circuit. Although the wavelength conversion member 3 is placed on the wiring board 2 in FIG. 1, the present invention is not limited thereto, and the wiring board 2 and the wavelength conversion member 3 may be disposed via other members.

例如於圖2中,配線基板2與波長變換構件3經由機殼4而配置。機殼4亦可為錐狀,以使光具有指向性。又,機殼4亦可為反射材料。 For example, in FIG. 2, the wiring board 2 and the wavelength conversion member 3 are arranged via the casing 4. The casing 4 may also be tapered to impart directivity to the light. Also, the casing 4 may be a reflective material.

就提高發光裝置10之發光效率之觀點而言,配線基板2較佳為電氣絕緣性優異且具有良好之散熱性,且反射率較高,亦可於配線基板2之晶片安裝面上不存在藍色半導體發光元件1之面上、或連接配線基板2與波長變換構件3之其他構件之內面之至少一部分設置反射率較高之反射板。 From the viewpoint of improving the light-emitting efficiency of the light-emitting device 10, the wiring board 2 is preferably excellent in electrical insulation, has good heat dissipation, and has high reflectance, and may not have blue on the wafer mounting surface of the wiring substrate 2. A reflector having a high reflectance is provided on at least a part of the surface of the color semiconductor light-emitting element 1 or the inner surface of the other member connecting the wiring board 2 and the wavelength conversion member 3.

作為此種配線基板中使用之反射板之反射率或覆蓋配線基板之一部分之反射板之反射率,較佳為80%以上,更佳為反射率為80%以上之部位之面積為配線基板之面積之50%以上,進而較佳為70%以上,特佳為80%以上,進而,較佳為具有反射率為90%以上之部位,更佳 為反射率為90%以上之部位之面積為配線基板之面積之50%以上,進而較佳為70%以上,特佳為80%以上。再者,反射率意指可見光區域光之反射率。 The reflectance of the reflector used in the wiring board or the reflectance of the reflector covering a part of the wiring board is preferably 80% or more, and more preferably the area of the portion having a reflectance of 80% or more is the wiring board. 50% or more of the area, more preferably 70% or more, particularly preferably 80% or more, and further preferably a portion having a reflectance of 90% or more, more preferably The area of the portion having a reflectance of 90% or more is 50% or more of the area of the wiring substrate, more preferably 70% or more, and particularly preferably 80% or more. Further, the reflectance means the reflectance of light in the visible light region.

同樣地,於使用機殼之情形時,作為機殼中使用之反射板之反射率或覆蓋機殼之一部分之反射板之反射率,較佳為80%以上,更佳為反射率為80%以上之部位之面積為機殼及配線基板之面積之50%以上,進而較佳為70%以上,特佳為80%以上。進而,較佳為具有其反射率為90%以上之部位,更佳為反射率為90%以上之部位之面積為機殼及配線基板之面積之50%以上,進而較佳為70%以上,特佳為80%以上。再者,反射率意指可見光區域光之反射率。 Similarly, in the case of using the casing, the reflectance of the reflecting plate used in the casing or the reflectance of the reflecting plate covering a part of the casing is preferably 80% or more, more preferably 80%. The area of the above portion is 50% or more of the area of the casing and the wiring board, more preferably 70% or more, and particularly preferably 80% or more. Further, it is preferable to have a portion having a reflectance of 90% or more, and more preferably a portion having a reflectance of 90% or more, which is 50% or more of the area of the casing and the wiring board, and more preferably 70% or more. Particularly good is more than 80%. Further, the reflectance means the reflectance of light in the visible light region.

作為用以達成此種反射率之材料,可列舉樹脂中含有填料之反射材料。具體而言,較佳為於聚矽氧樹脂、聚碳酸酯樹脂、聚鄰苯二甲醯胺樹脂等中含有氧化鋁、氧化鈦、氧化矽、氧化鋅、氧化鎂等金屬氧化物填料之反射材料或於陶瓷中含有金屬氧化物之反射材料等。 As a material for achieving such a reflectance, a reflective material containing a filler in a resin can be mentioned. Specifically, it is preferable to contain a reflection of a metal oxide filler such as alumina, titania, cerium oxide, zinc oxide or magnesium oxide in a polyoxyxylene resin, a polycarbonate resin or a polyphthalamide resin. A material or a reflective material containing a metal oxide in a ceramic.

作為於聚碳酸酯樹脂中含有氧化鈦等金屬氧化物之反射材料,例如可列舉Iupilon EHR3100、EHR3200等。 Examples of the reflective material containing a metal oxide such as titanium oxide in the polycarbonate resin include, for example, Iupilon EHR3100 and EHR3200.

作為於聚矽氧樹脂中含有氧化鋁、氧化鈦等金屬氧化物之反射材料,例如可列舉WO2011/078239、WO2011/136302中記載之反射材料。 Examples of the reflective material containing a metal oxide such as alumina or titanium oxide in the polyoxyxene resin include a reflective material described in WO2011/078239 and WO2011/136302.

又,亦可較佳地例示於聚鄰苯二甲酸醯胺中含有氧化鋁、氧化鈦等金屬氧化物之反射材料。 Further, a reflective material containing a metal oxide such as alumina or titania in polyphthalic acid phthalamide is preferably exemplified.

波長變換構件3對藍色半導體發光元件1所發出之入射光之一部分進行波長變換,放射出與入射光不同波長之出射光。波長變換構件3含有樹脂及螢光體。螢光體(未圖示)之種類並無特別限定,若發光裝置為白色發光裝置,則可根據半導體發光元件之激發光之種類,以發出白光之方式適當調整螢光體之種類。 The wavelength conversion member 3 wavelength-converts a portion of the incident light emitted from the blue semiconductor light-emitting element 1, and emits light of a different wavelength from the incident light. The wavelength conversion member 3 contains a resin and a phosphor. The type of the phosphor (not shown) is not particularly limited. When the light-emitting device is a white light-emitting device, the type of the phosphor can be appropriately adjusted in accordance with the type of the excitation light of the semiconductor light-emitting device to emit white light.

於半導體發光元件為藍色半導體發光元件之情形時,藉由使用黃色螢光體或使用綠色螢光體及紅色螢光體,可製成發出白光之發光裝置。 In the case where the semiconductor light-emitting element is a blue semiconductor light-emitting element, a light-emitting device that emits white light can be produced by using a yellow phosphor or using a green phosphor and a red phosphor.

於半導體發光元件為紫色半導體發光元件之情形時,藉由使用藍 色螢光體、綠色螢光體及紅色螢光體,可製成發出白光之發光裝置。 In the case where the semiconductor light emitting element is a purple semiconductor light emitting element, by using blue A color phosphor, a green phosphor, and a red phosphor can be used to make a white light emitting device.

又,於波長變換構件3中,較佳為含有螢光體並且含有少量透過率調整劑。作為透過率調整劑,可列舉無機系光透過率調整劑、有機系光透過率調整劑或氣泡。作為透過率調整劑,較佳為包含選自由二氧化矽、玻璃、碳酸鈣、氧化鈦、倍半矽氧烷、聚矽氧、氟化鈣、氟化鎂及雲母所組成之群中之1種以上。 Further, it is preferable that the wavelength converting member 3 contains a phosphor and contains a small amount of a transmittance adjusting agent. Examples of the transmittance adjusting agent include an inorganic light transmittance adjusting agent, an organic light transmittance adjusting agent, and a bubble. The transmittance adjusting agent preferably comprises one selected from the group consisting of ceria, glass, calcium carbonate, titanium oxide, sesquiterpene oxide, polyfluorene oxide, calcium fluoride, magnesium fluoride, and mica. More than one species.

又,波長變換構件3較佳為與藍色半導體發光元件1之間具有距離。波長變換構件3與藍色半導體發光元件1之間可為空間,亦可具備透明樹脂。如此,藉由於波長變換構件3與藍色半導體發光元件1之間具有距離之樣態,利用藍色半導體發光元件1所發出之熱可抑制波長變換構件3及波長變換構件中所包含之螢光體之劣化。藍色半導體發光元件1與波長變換構件3之間之距離較佳為10 μm以上,進而較佳為100 μm以上,特佳為1.0 mm以上,另一方面,較佳為1.0 m以下,進而較佳為500 mm以下,特佳為100 mm以下。 Further, the wavelength conversion member 3 preferably has a distance from the blue semiconductor light-emitting element 1. The wavelength conversion member 3 and the blue semiconductor light-emitting element 1 may be spaces or may be provided with a transparent resin. In this manner, the distance between the wavelength conversion member 3 and the blue semiconductor light-emitting element 1 is such that the heat generated by the blue semiconductor light-emitting element 1 can suppress the fluorescence included in the wavelength conversion member 3 and the wavelength conversion member. Deterioration of the body. The distance between the blue semiconductor light-emitting device 1 and the wavelength conversion member 3 is preferably 10 μm or more, more preferably 100 μm or more, particularly preferably 1.0 mm or more, and more preferably 1.0 m or less. It is preferably 500 mm or less, and particularly preferably 100 mm or less.

本發明之第三實施樣態之發光裝置較佳為放射出白光之發光裝置。放射出白光之發光裝置較佳為自發光裝置放射之光與自光色之黑體輻射軌跡之偏差duv為-0.0200~0.0200,且色溫為1800 K以上且7000 K以下。 The light-emitting device according to the third embodiment of the present invention is preferably a light-emitting device that emits white light. Preferably, the light-emitting device that emits white light has a deviation duv of -0.0200 to 0.0200 from the light emitted from the light-emitting device and the black body radiation trajectory from the light color, and the color temperature is 1800 K or more and 7,000 K or less.

第三實施樣態之發光裝置於發出低色溫之光之情形時亦可達成高光束。因此,尤佳為發出色溫為5500 K以下、5000 K以下、4500 K以下等低色溫之光之情形。 The illuminating device of the third embodiment can also achieve a high beam when emitting light of a low color temperature. Therefore, it is particularly preferable to emit a light having a color temperature of 5500 K or less, 5000 K or less, and 4500 K or less.

如此出射白光之發光裝置較佳地設於照明裝置。 The light-emitting device that emits white light in this way is preferably provided in the illumination device.

<4.照明器具> <4. Lighting fixtures>

本發明之第四實施樣態係具備第三實施樣態之發光裝置之照明器具。如上所述,自第三實施樣態之發光裝置出射較高之全光束,又,即便為出射全光束容易降低之低色溫之白光之發光裝置,亦可達成較高之全光束,因此可獲得全光束較高之照明器具。照明器具較佳為以於熄滅時波長變換構件之顏色不顯眼之方式配置覆蓋發光裝置中之波長變換構件之擴散構件。作為擴散構件,只要霧度為40%以上、全光 線透過率為60%以上,則無特別限制,只要配置於波長變換構件之外側,則可作為照明器具而配置,亦可組入發光裝置中。一併包含擴散構件與波長變換構件之空間內之其他構件之至少一部分較佳為成為反射率較高之反射板。 A fourth embodiment of the present invention is a lighting fixture comprising the light-emitting device of the third embodiment. As described above, since the light-emitting device of the third embodiment emits a high total light beam, and even a light-emitting device that emits white light of a low color temperature in which the full beam is easily reduced, a high total beam can be obtained, and thus it is possible to obtain A lighting fixture with a high total beam. Preferably, the lighting fixture is provided with a diffusion member that covers the wavelength conversion member in the light-emitting device such that the color of the wavelength conversion member is inconspicuous when the light is extinguished. As the diffusion member, as long as the haze is 40% or more, the total light The linear transmittance is not particularly limited as long as it is 60% or more, and may be disposed as a lighting fixture as long as it is disposed outside the wavelength conversion member, or may be incorporated in the light-emitting device. At least a part of the other members in the space including the diffusion member and the wavelength conversion member are preferably reflectors having a high reflectance.

<5.構成波長變換構件之樹脂組成物> <5. Resin composition constituting the wavelength converting member>

本發明之第五實施樣態之樹脂組成物係含有螢光體及樹脂者,其特徵在於:使該樹脂組成物成形於具有面狀構造之波長變換構件時之該面狀構造之至少一部分的全光線透過率為30%以上且70%以下。又,較佳為該面狀構造之主要部分之全光線透過率為30%以上且70%以下。 The resin composition according to the fifth embodiment of the present invention contains a phosphor and a resin, and the resin composition is molded into at least a part of the planar structure when the wavelength conversion member having a planar structure is formed. The total light transmittance is 30% or more and 70% or less. Further, it is preferable that the total light transmittance of the main portion of the planar structure is 30% or more and 70% or less.

進而,上述全光線透過率較佳為42%以上,更佳為45%以上,進而較佳為47%以上。另一方面,較佳為60%以下,更佳為55%以下。 Further, the total light transmittance is preferably 42% or more, more preferably 45% or more, still more preferably 47% or more. On the other hand, it is preferably 60% or less, more preferably 55% or less.

即,係可製造能夠調節該全光線透過率之波長變換構件之樹脂組成物,其原料之說明與<1-1.波長變換構件>中之說明同樣。 In other words, a resin composition capable of adjusting the total light transmittance of the wavelength conversion member can be produced, and the description of the raw material is the same as that described in <1-1. Wavelength conversion member>.

[實施例] [Examples]

以下,藉由實施例詳細地說明本發明,當然本發明並非僅限定於以下之實施樣態。 Hereinafter, the present invention will be described in detail by way of examples, although the invention is not limited to the embodiments described below.

<原料> <Materials>

準備以下所示之樹脂、螢光體、透過率調整劑、氧化穩定劑、脫模劑。又,將透過率調整劑1~14之物性示於表1。 The resin, the phosphor, the transmittance adjuster, the oxidation stabilizer, and the release agent shown below are prepared. Moreover, the physical properties of the transmittance adjusting agents 1 to 14 are shown in Table 1.

(非晶性熱塑性樹脂) (amorphous thermoplastic resin)

樹脂1:三菱工程塑膠股份有限公司製造 聚碳酸酯樹脂S-3000F玻璃轉移溫度=149℃ Resin 1: manufactured by Mitsubishi Engineering Plastics Co., Ltd. Polycarbonate resin S-3000F glass transfer temperature = 149 ° C

樹脂2:三菱麗陽股份有限公司製造PMMA樹脂ACRYPET VH001玻璃轉移溫度=100℃ Resin 2: manufactured by Mitsubishi Rayon Co., Ltd. PMMA resin ACRYPET VH001 glass transfer temperature = 100 ° C

樹脂3:JSR股份有限公司製造 環狀烯烴樹脂ARTON F5023玻璃轉移溫度=165℃ Resin 3: manufactured by JSR Co., Ltd. Rotary olefin resin ARTON F5023 glass transfer temperature = 165 ° C

樹脂4:UNITIKA股份有限公司製造U polymer U100玻璃轉移溫度=198℃ Resin 4: U polymer U100 glass transfer temperature manufactured by UNITIKA Co., Ltd. = 198 ° C

(具有結晶性之熱塑性樹脂) (The crystalline thermoplastic resin)

樹脂5:旭硝子股份有限公司製造Fluon ETFE C-88AXP彎曲彈性模數:880 MPa熔點:150℃以上且320℃以下 Resin 5: manufactured by Asahi Glass Co., Ltd. Fluon ETFE C-88AXP Flexural modulus: 880 MPa Melting point: 150 ° C or more and 320 ° C or less

樹脂6:KUREHA股份有限公司製造PVDF KF polymer W#850彎曲彈性模數:1600 MPa熔點:150℃以上且320℃以下 Resin 6: manufactured by KUREHA Co., Ltd. PVDF KF polymer W#850 flexural modulus: 1600 MPa Melting point: 150 ° C or more and 320 ° C or less

樹脂7:三井化學股份有限公司製造PMP(聚甲基戊烯)TPX RT18彎曲彈性模數:1600 MPa熔點:150℃以上且320℃以下 Resin 7: Mitsui Chemicals Co., Ltd. manufactures PMP (polymethylpentene) TPX RT18 flexural modulus: 1600 MPa Melting point: 150 ° C or more and 320 ° C or less

樹脂8:日本聚乙烯股份有限公司製造PE(聚乙烯)高密度聚乙烯NOVATEC HD HB420R彎曲彈性模數:1300 MPa熔點:150℃以下 Resin 8: PE (polyethylene) high density polyethylene manufactured by Nippon Polyethylene Co., Ltd. NOVATEC HD HB420R flexural modulus: 1300 MPa Melting point: 150 ° C or less

樹脂9:DAIKIN工業股份有限公司製造NEOFLON ETFE2 EP610彎曲彈性模數:840 MPa熔點:150℃以上且320℃以下 Resin 9: manufactured by DAIKIN Industrial Co., Ltd. NEOFLON ETFE2 EP610 flexural modulus: 840 MPa Melting point: 150 ° C or more and 320 ° C or less

樹脂10:旭硝子股份有限公司製造Fulon LM-ETFE LM730AP彎曲彈性模數:650 MPa熔點:150℃以上且320℃以下 Resin 10: manufactured by Asahi Glass Co., Ltd. Fulon LM-ETFE LM730AP flexural modulus: 650 MPa Melting point: 150 ° C or more and 320 ° C or less

樹脂11:DAIKIN工業股份有限公司製造NEOFLON FEP NP101彎曲彈性模數:490 MPa熔點:150℃以上且320℃以下 Resin 11: manufactured by DAIKIN Industrial Co., Ltd. NEOFLON FEP NP101 flexural modulus: 490 MPa Melting point: 150 ° C or more and 320 ° C or less

(螢光體) (fluorescent body)

螢光體1:三菱化學股份有限公司製造YAG商品名BY102D平均粒徑=17 μm之聚矽氧油處理品 Phosphor 1: Daimling Chemical Co., Ltd. manufactures YAG commercial product BY102D average particle size = 17 μm.

螢光體2:三菱化學股份有限公司製造CASN商品名BR101A平均粒徑=8.5 μm Phosphor 2: manufactured by Mitsubishi Chemical Corporation, CASN trade name BR101A average particle size = 8.5 μm

螢光體3:三菱化學股份有限公司製造YAG平均粒徑=7 μm Phosphor 3: YAG average particle size manufactured by Mitsubishi Chemical Corporation = 7 μm

(透過率調整劑) (transmittance adjuster)

透過率調整劑1:邁圖公司製造Tospearl 120平均粒徑=2.0 μm Transmittance adjuster 1: Maxim's Tospearl 120 average particle size = 2.0 μm

透過率調整劑2:石原產業股份有限公司製造 氧化鈦CR60平均粒徑=0.21 μm Transmittance Adjuster 2: Manufactured by Ishihara Sangyo Co., Ltd. The average particle size of titanium oxide CR60 = 0.21 μm

透過率調整劑3:電氣化學工業股份有限公司製造 熔融二氧化矽FB20D Transmittance Adjuster 3: Manufactured by Electric Chemical Industry Co., Ltd. Fused cerium oxide FB20D

透過率調整劑4:電氣化學工業股份有限公司製造 熔融二氧化矽FB5D Transmittance Adjuster 4: Manufactured by Denki Kogyo Co., Ltd. Fused cerium oxide FB5D

透過率調整劑5:日本電氣硝子股份有限公司製造 切股(chopped strands)T480H Transmittance modifier 5: manufactured by Nippon Electric Glass Co., Ltd. Chopped strands T480H

透過率調整劑6:日本板硝子股份有限公司製造 玻璃薄片REF160 Transmittance Adjuster 6: Made by Nippon Sheet Glass Co., Ltd. Glass Flake REF160

透過率調整劑7:日本板硝子股份有限公司製造 玻璃薄片REF015 Transmittance Adjuster 7: Made by Nippon Sheet Glass Co., Ltd. Glass Flake REF015

透過率調整劑8:日本板硝子股份有限公司製造 玻璃薄片RCF160 Transmittance Adjuster 8: Made by Nippon Sheet Glass Co., Ltd. Glass Foil RCF160

透過率調整劑9:CO-OP CHEMICAL股份有限公司製造 合成雲母micro-mica MK300 Transmittance modifier 9: manufactured by CO-OP CHEMICAL Co., Ltd. Synthetic mica micro-mica MK300

透過率調整劑10:丸尾鈣股份有限公司製造 碳酸鈣N35 Transmittance Adjuster 10: Manufactured by Marui Co., Ltd. Calcium Carbonate N35

透過率調整劑11:丸尾鈣股份有限公司製造 碳酸鈣Calfine200 Transmittance adjuster 11: manufactured by Marui Co., Ltd. Calcium carbonate Calfine200

透過率調整劑12:第一稀土元素化學工業股份有限公司製造EP氧化鋯 Transmittance Adjuster 12: EP zirconia manufactured by First Rare Earth Chemical Industry Co., Ltd.

透過率調整劑13:Ganz化成股份有限公司製造Ganzpearl SI-020 Transmittance adjuster 13: Ganzpearl SI-020 manufactured by Ganz Chemical Co., Ltd.

透過率調整劑14:UBE MATERIAL股份有限公司製造 矽酸鈣晶鬚Zonohigi Transmittance Adjuster 14: Manufactured by UBE MATERIAL Co., Ltd. Calcium Citrate Whisker Zonohigi

透過率調整劑15:以0.5%聚矽氧油SH1107(Dow Corning Toray公司製造)對透過率調整劑3進行處理 Transmittance adjuster 15: The transmittance adjuster 3 was treated with 0.5% polyoxyphthalic acid SH1107 (manufactured by Dow Corning Toray Co., Ltd.)

透過率調整劑16:以2%乙基三甲氧基矽烷對透過率調整劑3進行處理 Transmittance Conditioner 16: Treatment of Transmittance Conditioner 3 with 2% Ethyltrimethoxydecane

(抗氧化劑) (Antioxidants)

抗氧化劑1:ADEKA股份有限公司製造 酚系抗氧化劑AO60 Antioxidant 1: ADEKA Co., Ltd. phenolic antioxidant AO60

抗氧化劑2:ADEKA股份有限公司製造 磷系抗氧化劑Adekastab 2112 Antioxidant 2: ADEKA Co., Ltd. Phosphorus-based antioxidant Adekastab 2112

(脫模劑) (release agent)

脫模劑1:日油股份有限公司製造Unistar H476 Release Agent 1: Unistar H476 manufactured by Nippon Oil Co., Ltd.

<實施例1~10、比較例1~2> <Examples 1 to 10, Comparative Examples 1 to 2>

於80~120℃下對樹脂1~4進行4小時乾燥後,以表2之調配組成、加工條件進行混練。此處,混練條件如下所述。再者,使用惰性氣體時,於氮氣體環境下進行混練操作。 The resin 1 to 4 was dried at 80 to 120 ° C for 4 hours, and then kneaded by the composition and processing conditions of Table 2. Here, the kneading conditions are as follows. Further, when an inert gas is used, a kneading operation is performed in a nitrogen atmosphere.

(混練條件) (kneading conditions)

混練條件1:使用東洋精機製作所股份有限公司製造之20 mmΦ單軸擠出機,以螺桿轉速30~50 rpm於表2記載之溫度下進行混練。 Kneading condition 1: A 20 mm Φ single-axis extruder manufactured by Toyo Seiki Co., Ltd. was used, and kneading was carried out at a screw rotation speed of 30 to 50 rpm at the temperatures shown in Table 2.

混練條件2:利用東洋精機製作所股份有限公司製造之密閉型混練機(laboplastomill)以轉速80 rpm進行3分鐘混練。 Kneading condition 2: A closed type kneading machine (laboplastomill) manufactured by Toyo Seiki Co., Ltd. was used for kneading at a rotation speed of 80 rpm for 3 minutes.

混練後,於表2所記載之溫度下進行成形。再者,射出成形係使用住友重機械工業股份有限公司製造之射出成形機Minimat M8/7A。 After kneading, molding was carried out at the temperatures described in Table 2. Further, the injection molding system used an injection molding machine Minimat M8/7A manufactured by Sumitomo Heavy Industries, Ltd.

所獲得之波長變換構件之厚度為1 mm,係35 mmΦ以上且45 mmΦ以下之圓板形狀。關於所獲得之波長變換構件,以如下所示之方法實施全光線透過率測定、發光特性測定。將其結果示於表2,將表示全光線透過率(%)與Lumen比(%)之關係之圖表示於圖3。 The obtained wavelength conversion member has a thickness of 1 mm and is a disk shape of 35 mmΦ or more and 45 mmΦ or less. With respect to the obtained wavelength conversion member, total light transmittance measurement and measurement of light emission characteristics were carried out by the method described below. The results are shown in Table 2, and a graph showing the relationship between the total light transmittance (%) and the Lumen ratio (%) is shown in Fig. 3 .

<全光線透過率測定> <Measurement of total light transmittance>

使用日本電色工業股份有限公司製造之濁度計NDH2000,使用鹵素燈作為光源,將入口開口設為20 mmΦ,依據JIS K7361進行測定。 A turbidity meter NDH2000 manufactured by Nippon Denshoku Industries Co., Ltd. was used, and a halogen lamp was used as a light source, and the inlet opening was set to 20 mmΦ, and the measurement was performed in accordance with JIS K7361.

<發光特性測定> <Measurement of luminescence characteristics>

於以450 nm發光之LED發光元件上保持成形品,測定光束、色溫(K)、色度(x、y)、平均顯色評價數(Ra)作為透過成形品而經波長變換之光之特性。光束係將實施例1之材料之光束作為基準,以Lumen比(%)表示。 The molded article is held on an LED light-emitting element that emits light at 450 nm, and the characteristics of the light beam, the color temperature (K), the chromaticity (x, y), and the average color evaluation number (Ra) are measured as wavelength-transformed light transmitted through the molded article. . The beam is based on the Lumen ratio (%) of the light beam of the material of Example 1.

再者,LED發光元件與波長變換構件之間之距離約為2.6 cm,其間設為空間。 Further, the distance between the LED light-emitting element and the wavelength conversion member is about 2.6 cm, and a space is provided therebetween.

根據上述實施例及比較例可理解,包含螢光體及樹脂且全光線透過率為30%以上且70%以下之範圍之成形體的全光束較高。同時可理解,於發出4000 K~5500 K左右之較低色溫之光之情形時,全光束亦較高。 As can be understood from the above examples and comparative examples, the total light flux of the molded body including the phosphor and the resin and having a total light transmittance of 30% or more and 70% or less is high. At the same time, it can be understood that the total beam is also high when emitting light of a lower color temperature of about 4000 K to 5500 K.

因此,使用本發明之成形體之發光裝置於發出低色溫之光之情形時,亦可達成較高之全光束。 Therefore, when the light-emitting device using the molded body of the present invention emits light of a low color temperature, a high total light beam can be achieved.

<實施例11~13、比較例3> <Examples 11 to 13, Comparative Example 3>

以表3所記載之調配組成,利用東洋精機製作所股份有限公司製造之密閉型混練機以80 rpm進行3分鐘混練,獲得樹脂組成物。所獲得之樹脂組成物藉由加壓成形而成形,獲得波長變換構件。再者,成形溫度、混練溫度因樹脂而異,於實施例11及12中設為300℃,於實施例13中設為200℃,於比較例3中設為280℃。 In the sealed kneading machine manufactured by Toyo Seiki Seisakusho Co., Ltd., the mixture was kneaded at 80 rpm for 3 minutes to obtain a resin composition. The obtained resin composition was molded by press molding to obtain a wavelength conversion member. In addition, the molding temperature and the kneading temperature were different depending on the resin, and were 300 ° C in Examples 11 and 12, 200 ° C in Example 13, and 280 ° C in Comparative Example 3.

關於所獲得之波長變換構件,以與上述同樣之方式實施全光線透過率測定、發光特性測定,以如下所示之方法實施色差測定。又,確認波長變換構件之變色之有無。再者,發光特性測定之結果(光束)係將實施例11之光束作為基準,以Lumen比(%)表示。 With respect to the obtained wavelength conversion member, the total light transmittance measurement and the measurement of the light emission characteristics were carried out in the same manner as described above, and the color difference measurement was carried out by the method shown below. Further, it was confirmed whether or not the color conversion member was discolored. Further, the result of the measurement of the luminescence characteristics (beam) was expressed by the Lumen ratio (%) using the light beam of Example 11 as a reference.

<色差測定> <Color difference measurement>

使用日本電色工業股份有限公司製造之測色色差計ZE-2000,使用白板擠壓來測定反射之L、a、b,以不存在各組成之透過率調整劑之情形之色相(L0、a0、b0)與調配有透過率調整劑之情形之色相(L1、a1、b1)之Lab空間座標之距離⊿E={(L0-L1)2+(a0-a1)2+(b0-b1)2}0.5表示。 Using the colorimetric color difference meter ZE-2000 manufactured by Nippon Denshoku Industries Co., Ltd., the white phase is used to measure the reflection of L, a, b, and the hue (L0, a0) in the absence of the transmittance adjusting agent of each composition. , b0) The distance from the Lab space coordinates of the hue (L1, a1, b1) in the case of the transmittance modifier: =E={(L0-L1) 2 +(a0-a1) 2 +(b0-b1) 2 } 0.5 means.

<實施例14~22、比較例4~5> <Examples 14 to 22, Comparative Examples 4 to 5>

以表4所記載之調配組成,利用東洋精機製作所股份有限公司製造之密閉型混練機以80 rpm進行3分鐘混練,獲得樹脂組成物。所獲得之樹脂組成物藉由加壓成形而成形,獲得波長變換構件。再者,成形溫度、混練溫度設為300℃。 In the sealed kneading machine manufactured by Toyo Seiki Seisakusho Co., Ltd., the mixture was kneaded at 80 rpm for 3 minutes to obtain a resin composition. The obtained resin composition was molded by press molding to obtain a wavelength conversion member. Further, the molding temperature and the kneading temperature were set to 300 °C.

關於所獲得之波長變換構件,以與上述同樣之方法實施全光線透過率測定、色差測定、發光特性測定。再者,發光特性測定之結果(光束)係將實施例14之光束作為基準,以Lumen比(%)表示。 With respect to the obtained wavelength conversion member, total light transmittance measurement, color difference measurement, and light emission characteristics were measured in the same manner as described above. Further, the result of the measurement of the luminescence characteristics (beam) was expressed by the Lumen ratio (%) using the light beam of Example 14 as a reference.

<實施例23~28、比較例6~7> <Examples 23 to 28, Comparative Examples 6 to 7>

以表5所記載之調配組成,利用20 mm 端軸擠出機進行混練,獲得作為樹脂組成物之顆粒。所獲得之顆粒係使用住友重機械工業股份有限公司製造之射出成形機Minimat M8/7A,使3.5 mm 、1 mm厚之圓盤與3 mm 、1 mm厚之弓狀成形體射出成形。再者,成形溫度、混練溫度設為240℃。 Using the composition shown in Table 5, using 20 mm The end shaft extruder was kneaded to obtain pellets as a resin composition. The obtained pellets were made using the injection molding machine Minimat M8/7A manufactured by Sumitomo Heavy Industries, Ltd. to make 3.5 mm. , 1 mm thick disc with 3 mm The 1 mm thick arcuate shaped body was injection molded. Further, the molding temperature and the kneading temperature were set to 240 °C.

所獲得之圓盤係用於全光線透過率測定、色差測定,弓狀成形體係用於發光特性測定。測定方法與上述方法同樣。再者,發光特性測定之結果(光束)係將實施例23之光束作為基準,以Lumen比(%)表示。 The obtained disc was used for total light transmittance measurement, color difference measurement, and an arcuate forming system for measurement of luminescence characteristics. The measurement method is the same as the above method. Further, the result of the measurement of the luminescence characteristics (beam) was expressed by the Lumen ratio (%) using the light beam of Example 23 as a reference.

根據上述實施例及比較例可理解,包含具有結晶性之熱塑性樹脂且全光線透過率為30~70%之範圍之成形體的全光束較高。同時可理解,於發出3000 K~4000 K左右之較低色溫之光之情形時,全光束亦較高。 As can be understood from the above examples and comparative examples, the total light flux of the molded body including the crystalline thermoplastic resin and having a total light transmittance of 30 to 70% is high. At the same time, it can be understood that the total beam is also high when a light of a lower color temperature of about 3000 K to 4000 K is emitted.

因此,使用本發明之成形體之發光裝置於發出低色溫之光之情形時,亦可達成較高之全光束。 Therefore, when the light-emitting device using the molded body of the present invention emits light of a low color temperature, a high total light beam can be achieved.

<實施例29~33> <Examples 29 to 33>

以表6所記載之調配組成,利用東洋精機製作所股份有限公司製造之密閉型混練機以80 rpm進行3分鐘混練,獲得樹脂組成物。所獲得之樹脂組成物藉由加壓成形而成形,獲得波長變換構件。再者,成形溫度、混練溫度設為300℃。 In the sealed kneading machine manufactured by Toyo Seiki Seisakusho Co., Ltd., the mixture was kneaded at 80 rpm for 3 minutes to obtain a resin composition. The obtained resin composition was molded by press molding to obtain a wavelength conversion member. Further, the molding temperature and the kneading temperature were set to 300 °C.

關於所獲得之波長變換構件,以與上述同樣之方法實施全光線透過率測定、色差測定、發光特性測定。再者,發光特性測定之結果(光束)係將實施例29之光束作為基準,以Lumen比(%)表示。 With respect to the obtained wavelength conversion member, total light transmittance measurement, color difference measurement, and light emission characteristics were measured in the same manner as described above. Further, the result of the measurement of the luminescence characteristics (beam) was expressed by the Lumen ratio (%) using the light beam of Example 29 as a reference.

根據上述實施例可知,於使用實施表面處理之透過率調整劑之情形時,可使色溫不產生大幅變化而提高全光線透過率及全光束。 According to the above embodiment, when the transmittance adjusting agent for surface treatment is used, the total light transmittance and the total light beam can be improved without causing a large change in the color temperature.

<使用反射率較高之反射材料之發光裝置> <Light-emitting device using a reflective material having a high reflectance> <參考例1~2> <Reference Example 1~2>

使用相同之波長變換構件(全光線透過率50%),於與上述同樣之發光測定方法中確認發光裝置之配線基板(反射率未滿80%)上及機殼(反射率未滿80%)上設置有反射率93~95%之反射材料(於配線基板之情形時於不存在半導體發光元件之面上)之情形之發光效率提高。將測定結果示於表7。反射率係使用日立高新公司製造之U-3310,將硫酸鋇作為標準試料進行測定。 Using the same wavelength conversion member (total light transmittance: 50%), in the same luminescence measurement method as described above, it was confirmed that the wiring substrate (reflectance is less than 80%) and the casing (reflectance is less than 80%) of the light-emitting device. The light-emitting efficiency is improved in the case where a reflective material having a reflectance of 93 to 95% is provided (in the case where the wiring substrate is not present on the surface of the semiconductor light-emitting device). The measurement results are shown in Table 7. The reflectance was measured using U-3310 manufactured by Hitachi High-Technologies Corporation and using barium sulfate as a standard sample.

可知,藉由使用一定比例以上之具有高反射率之反射材料,可於本波長變換構件中達成高效率。 It can be seen that high efficiency can be achieved in the present wavelength conversion member by using a certain amount or more of a reflective material having a high reflectance.

1‧‧‧藍色半導體發光元件 1‧‧‧Blue semiconductor light-emitting elements

2‧‧‧配線基板 2‧‧‧Wiring substrate

2a‧‧‧晶片安裝面 2a‧‧‧ wafer mounting surface

3‧‧‧波長變換構件 3‧‧‧wavelength conversion components

10‧‧‧發光裝置 10‧‧‧Lighting device

Claims (23)

一種波長變換構件,其係對入射光之至少一部分進行波長變換而放出與上述入射光不同波長之出射光者,其特徵在於:該波長變換構件具有面狀構造,該面狀構造包含吸收上述入射光之至少一部分而放出與上述入射光不同波長之出射光之螢光體、及保持該螢光體之樹脂,該面狀構造之至少一部分之全光線透過率為30%以上且70%以下。 A wavelength conversion member that converts at least a portion of incident light to emit light having a wavelength different from that of the incident light, wherein the wavelength conversion member has a planar structure including absorption of the incident A phosphor that emits light of a different wavelength from the incident light and a resin that holds the phosphor at least a part of the light, and at least a part of the planar structure has a total light transmittance of 30% or more and 70% or less. 如申請專利範圍第1項之波長變換構件,其中,該面狀構造之至少一部分之全光線透過率為42%以上且70%以下。 The wavelength conversion member according to claim 1, wherein at least a part of the planar structure has a total light transmittance of 42% or more and 70% or less. 如申請專利範圍第1或2項之波長變換構件,其中,上述波長變換構件之厚度為0.3 mm以上且5.0 mm以下。 The wavelength conversion member according to claim 1 or 2, wherein the wavelength conversion member has a thickness of 0.3 mm or more and 5.0 mm or less. 如申請專利範圍第1至3項中任一項之波長變換構件,其中,上述波長變換構件中所包含之上述螢光體之含量為15重量%以下。 The wavelength conversion member according to any one of claims 1 to 3, wherein the content of the phosphor contained in the wavelength conversion member is 15% by weight or less. 如申請專利範圍第1至4項中任一項之波長變換構件,其中,上述波長變換構件中所包含之上述螢光體之平均粒徑為10 μm以上。 The wavelength conversion member according to any one of claims 1 to 4, wherein the phosphor of the wavelength conversion member has an average particle diameter of 10 μm or more. 如申請專利範圍第1至5項中任一項之波長變換構件,其進而含有透過率調整劑。 The wavelength conversion member according to any one of claims 1 to 5, further comprising a transmittance adjusting agent. 如申請專利範圍第1至6項中任一項之波長變換構件,其中,上述樹脂為結晶性樹脂或非晶性樹脂。 The wavelength conversion member according to any one of claims 1 to 6, wherein the resin is a crystalline resin or an amorphous resin. 如申請專利範圍第7項之波長變換構件,其中,上述非晶性樹脂為熱塑性樹脂。 The wavelength conversion member according to claim 7, wherein the amorphous resin is a thermoplastic resin. 如申請專利範圍第1至8項中任一項之波長變換構件,其中,上述樹脂為合金。 The wavelength conversion member according to any one of claims 1 to 8, wherein the resin is an alloy. 如申請專利範圍第1至9項中任一項之波長變換構件,其中,上述波長變換構件可於不具有保持構件之情況下以單體保持其形態。 The wavelength conversion member according to any one of claims 1 to 9, wherein the wavelength conversion member can maintain its form in a single body without having a holding member. 如申請專利範圍第1至10項中任一項之波長變換構件,其係藉由射出成形而成形。 The wavelength conversion member according to any one of claims 1 to 10, which is formed by injection molding. 一種波長變換構件之製造方法,其係製造申請專利範圍第1至11項中任一項之波長變換構件之方法,其特徵在於: 包括混合樹脂與螢光體之步驟、及使藉由該步驟而獲得之混合物成形之步驟,並於惰性氣體環境下進行該混合步驟及/或該成形步驟。 A method of manufacturing a wavelength conversion member, which is a method for manufacturing a wavelength conversion member according to any one of claims 1 to 11, characterized in that: The steps of mixing the resin and the phosphor, and the step of forming the mixture obtained by the step, and performing the mixing step and/or the forming step under an inert gas atmosphere. 如申請專利範圍第12項之波長變換構件之製造方法,其中,於上述混合步驟中進而添加透過率調整劑。 The method for producing a wavelength conversion member according to claim 12, wherein a transmittance adjusting agent is further added to the mixing step. 如申請專利範圍第12或13項之波長變換構件之製造方法,其中,上述樹脂為結晶性樹脂或非晶性樹脂。 The method for producing a wavelength conversion member according to claim 12, wherein the resin is a crystalline resin or an amorphous resin. 一種發光裝置,其具備申請專利範圍第1至11項中任一項之波長變換構件或藉由申請專利範圍第12至14項中任一項之製造方法而製造之波長變換構件、及半導體發光元件。 A light-emitting device comprising a wavelength conversion member according to any one of claims 1 to 11 or a wavelength conversion member manufactured by the method of any one of claims 12 to 14, and a semiconductor light-emitting device element. 如申請專利範圍第15項之發光裝置,其中,出射光之色溫為5500 K以下。 The illuminating device of claim 15, wherein the color temperature of the emitted light is 5500 K or less. 如申請專利範圍第15或16項之發光裝置,其中,上述波長變換構件與上述半導體發光元件呈分離。 The light-emitting device of claim 15 or 16, wherein the wavelength conversion member is separated from the semiconductor light-emitting device. 如申請專利範圍第17項之發光裝置,其中,於上述波長變換構件與上述半導體發光元件之間具備透明樹脂。 The light-emitting device of claim 17, wherein the wavelength conversion member and the semiconductor light-emitting device are provided with a transparent resin. 如申請專利範圍第17項之發光裝置,其中,於上述波長變換構件與上述半導體發光元件之間具有空間。 The light-emitting device of claim 17, wherein the wavelength conversion member and the semiconductor light-emitting device have a space therebetween. 如申請專利範圍第15至19項中任一項之發光裝置,其中,上述發光裝置具有配線基板,於該配線基板上設置有反射板,反射率為80%以上之部位之面積為該配線基板上之面積之50%以上。 The light-emitting device according to any one of claims 15 to 19, wherein the light-emitting device has a wiring substrate on which a reflecting plate is provided, and an area of a portion having a reflectance of 80% or more is the wiring substrate. More than 50% of the area above. 如申請專利範圍第15至20項中任一項之發光裝置,其中,上述發光裝置具有上述配線基板及機殼,於該配線基板及該機殼內壁面上設置有反射板,反射率為80%以上之部位之面積係為機殼內壁面上及該配線基板上之面積之50%以上。 The light-emitting device according to any one of claims 15 to 20, wherein the light-emitting device includes the wiring board and the casing, and a reflector is provided on the wiring board and the inner wall surface of the casing, and the reflectance is 80. The area of the portion above % is 50% or more of the area on the inner wall surface of the casing and on the wiring board. 一種LED照明器具,其具有申請專利範圍第15至21項中任一項之發光裝置。 An LED lighting fixture having the illumination device of any one of claims 15 to 21. 一種樹脂組成物,其係含有螢光體及樹脂者,其特徵在於:於使該樹脂組成物成形為具有面狀構造之成形體時之該面狀構造之至少一部分的全光線透過率為30%以上且70%以下。 A resin composition containing a phosphor and a resin, wherein a total light transmittance of at least a part of the planar structure when the resin composition is molded into a molded body having a planar structure is 30 More than % and less than 70%.
TW102107188A 2012-02-27 2013-02-27 Wavelength conversion unit, method for manufacturing the same, light emitting device and illumination device each comprising the wavelength conversion unit therein, and resin composition TW201344998A (en)

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