TW201343969A - Upper electrode of reaction tank device of etching apparatus - Google Patents

Abstract

An upper electrode of a reaction tank device of an etching apparatus comprises an electrode plate and a ceramic spray film. The electrode plate comprises a body layer, a buffer layer disposed on the body layer, and several ventilation holes passing through the body layer and the buffer layer. The buffer layer is used to buffer the thermal expansion coefficient difference between the body layer and the ceramic spray film, and the excellent adhesion is formed between the buffer layer and the ceramic spray film, such that the buffer layer and the ceramic spray film can be tightly bonded without peeling off. In addition, the buffer layer and the ceramic spray film can both provide an anti-corrosion effect to provide the dual protection to the body layer. Thus, the electrode plate can be used repeatedly, and the equipment costs can be reduced.

Description

Upper electrode of the reaction tank device of the etching apparatus

The present invention relates to an electrode, and more particularly to an upper electrode of a reaction tank apparatus of an etching apparatus.

In the general plasma etching process, the upper electrode is located above the glass substrate, and must have a high plasma resistance. To achieve this, an electrode plate of the upper electrode is usually anodized to produce a layer on the surface. An anodic film, for example, the Taiwan Patent Application No. 88107375.

However, active corrosive gases such as fluorine (F) and chlorine (Cl) used in the plasma etching process may corrode the anode film and cause the upper electrode to fail. Therefore, the damaged anode film must be removed by chemical etching. Then, the anode film is re-grown, but this regeneration mode causes the electrode plate body of the upper electrode to be thinned. When the thickness of the electrode plate body is too thin to be used, the upper electrode needs to be eliminated, so that it is manufactured. higher cost.

In order to improve the aforementioned problems, the applicant has applied for a new patent of Taiwan Patent Certificate No. M396828. The upper electrode of the novel patent application is coated with a ceramic spray film on an electrode plate body, and the resistance of the ceramic spray film is Corrosion ability to protect the electrode plate from corrosion by corrosive gas in the plasma etching process. When the ceramic film is damaged, it is only necessary to re-coat the ceramic film on the electrode plate. Just fine. Since the ceramic spray film is a film layer additionally attached to the electrode plate body, the electrode plate body is not thinned and can be reused.

However, since the material of the electrode plate body is metal, the coefficient of thermal expansion is high, and the material of the ceramic film of the ceramic film is ceramic, and the coefficient of thermal expansion is low. That is, there is a distinct interface between the electrode plate body and the ceramic spray film due to different coefficients of thermal expansion, and when the temperature is increased or decreased, the interface is liable to accumulate stress due to uneven expansion amount, resulting in the ceramic. Cracks, voids and the like are generated at the interface between the spray film and the electrode plate body, and the adhesion between the ceramic spray film and the electrode plate body is lowered.

Therefore, when the corrosive gas passes through the plurality of vent holes of the upper electrode, the corrosive gas passes through the aforementioned cracks and pores to erode the electrode plate at the interface, and causes the ceramic spray film to fail. The electrode plate body is combined and peeled off, so that not only the desired protective effect cannot be achieved, but also the electrode plate body is eroded and damaged, so the structure of the known upper electrode still needs to be improved.

Accordingly, it is an object of the present invention to provide an upper electrode of a reaction tank apparatus of an etching apparatus which is excellent in adhesion between film layers and which is not easily peeled off and which is excellent in corrosion resistance and can be reused.

Thus, the upper electrode of the reaction vessel apparatus of the etching apparatus of the present invention comprises an electrode plate body and a ceramic spray film.

The electrode plate body comprises a body layer, a buffer layer disposed on the body layer, and a plurality of vent holes penetrating the body layer and the buffer layer up and down. The ceramic spray film is disposed on the buffer layer.

The effect of the invention is that the difference between the thermal expansion coefficients of the body layer and the ceramic spray film is buffered by the buffer layer, and the buffer layer and the ceramic spray film have a good bonding force, so the two It can be tightly combined without being easily peeled off. At the same time, the buffer layer and the ceramic spray film have anti-corrosion effect to provide double protection of the body layer, so the electrode plate body can be reused and the equipment cost can be reduced.

The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments.

Referring to Figures 1, 2, and 3, a preferred embodiment of the upper electrode 91 of the present invention is one of the components of a reaction tank unit 9 of an etching apparatus, the reaction tank unit 9 including a reaction space defining an opening upward A reaction chamber holder 93 of 92, and a lower electrode 94 mounted in the reaction space 92. The upper electrode 91 is in communication with a gas input device 8, whereby the gas input device 8 can introduce a corrosive gas for etching glass into the reaction space 92, and the corrosive gas can be fluorine or chlorine. Since the operation of the reaction tank device 9 is not the focus of the improvement of the present invention, it will not be described in detail.

The upper electrode 91 of the present invention is disposed on the reaction chamber seat 93, and can close the opening of the reaction space 92 in a lifted manner. The upper electrode 91 includes an electrode plate body 1, a plurality of ceramic tubes 2, a ceramic spray film 3, and a protective film 4.

The electrode plate body 1 of the present embodiment includes a body layer 11 , a buffer layer 12 covering the bottom surface of the body layer 11 , and a plurality of annular hole faces 14 extending through the body layer 11 and the buffer layer 12 . And a plurality of vent holes 13 defined by the annular hole faces 14 and communicating with the gas input device 8 and the reaction space 92.

The material of the body layer 11 of the present embodiment is aluminum alloy (Al Alloy), but in practice, titanium (Ti), titanium alloy (Ti Alloy), stainless steel (Stainless Steel), molybdenum (Mo), Made of metal such as nickel alloy.

The material of the buffer layer 12 of the present embodiment is alumina (Al ₂ O ₃ ) and has a thickness of about 5 to 150 μm. The buffer layer 12 is a metal oxide of the body layer 11, and therefore the material of the buffer layer 12 depends on the material of the body layer 11, and is not limited. The buffer layer 12 has a downwardly facing rough surface 121 having a roughness (Ra) of 0.3 to 40 μm, which can increase adhesion and bonding between the buffer layer 12 and the ceramic spray film 3. The area to enhance the bonding between the layers.

Each of the ceramic tubes 2 of the present embodiment is coaxially plugged into the vent holes 13 and abuts against the annular holes 14 . Each of the ceramic tubes 2 includes a rough surface 121 adjacent to the buffer layer 12 . End face 21. The ceramic tubes 2 are made of an insulating ceramic material, specifically alumina, aluminum nitride (AlN), yttrium oxide (Y ₂ O ₃ ), magnesium oxide (MgO), boron nitride (BN), or One of these combinations may also be a polymer material.

The ceramic tubes 2 completely shield the annular hole faces 14 of the electrode plate body 1 and function to guide corrosive gases from the gas input device 8 into the reaction space 92 of the reaction tank device 9 during the etching process. . By virtue of the corrosion resistance of the ceramic tubes 2, the annular holes 14 are effectively prevented from being corroded, and the vent holes 13 are reamed, and the flow rate of the corrosive gas is kept constant, so that the etching can be stably performed. The quality of the process.

However, in practice, the lengths of the ceramic tubes 2 can be shortened. At this time, the ceramic tubes 2 are mounted and fixed to the lower half of the annular hole faces 14, and the end faces 21 of the ceramic tubes 2 are adjacent to each other. The rough surface 121 of the buffer layer 12, if the length of the ceramic tube 2 is greater than a quarter of the length of the annular aperture surface 14, the foregoing stable corrosive gas flow rate can be achieved, so when implemented, These ceramic tubes 2 are not necessary to completely shield the annular surface 14 .

The ceramic spray film 3 of the present embodiment is used to protect the electrode plate body 1 from corrosion by corrosive gases, and the ceramic spray film 3 is simultaneously disposed on the rough surface 121 of the buffer layer 12 and the ceramic tubes 2 Further, the end surface 21 can prevent the corrosive gas from diffusing into the gap between the ceramic tube 2 and the annular surface 14 to achieve a better protection effect. Preferably, the ceramic spray film 3 has a thickness of 10 to 3000 μm and a surface roughness of 0.1 to 40 μm. The material of the ceramic spray film 3 of the present embodiment is alumina, but in practice, it may be yttrium oxide, zirconium oxide (ZrO ₂ ), aluminum oxide, titanium oxide (TiO ₂ ), magnesium oxide or cerium oxide. (SiO ² ), calcium oxide (CaO), chromium oxide (Cr ₂ O ₃ ), or a combination of these. The ceramic powder used in this example was alumina.

The protective film 4 is coated on the ceramic spray film 3 to have a thickness of 5 nm to 10 μm. The material of the protective film 4 is a telluride, a chromium compound, or a combination thereof, and specifically may be potassium citrate (K ₂ SiO ₃ ), sodium citrate (Na ₂ SiO ₃ ), organic chromium, and It may be selected from a high molecular polymer, and specifically may be polyvinyl alcohol (PVA), polyvinyl butyral (PVB) or the like. However, in practice, since both the ceramic spray film 3 and the buffer layer 12 have corrosion resistance, it is not necessary to provide the protective film 4.

2, 3, and 4, when the upper electrode 91 is fabricated, the body layer 11 of the electrode plate body 1 is first anodized to form a metal oxide layer having a porous structure on the surface of the body layer 11. The metal oxide layer is the buffer layer 12 of the present embodiment. After the anode treatment is completed, the ceramic tubes 2 can be coaxially plugged into the vent holes 13 in communication with each other.

Then, the buffer layer 12 is roughened by sand blasting, and the rough surface 121 of the unevenness is formed on the bottom side of the buffer layer 12. However, in practice, the body layer 11 may be roughened first, and then the ceramic tubes 2 are inserted into the vent holes 13, and then the body layer 11 is anodized, and the buffer layer can be similarly The bottom surface of layer 12 is rough. Then, the molten ceramic powder is spray-coated on the rough surface 121 of the buffer layer 12 and the end surface 21 of the ceramic tube 2 by means of plasma spraying, and the ceramic spray film is formed after being cooled and solidified. 3.

Finally, a spray particle binder is applied to the surface of the ceramic spray film 3, thereby filling the gap of the ceramic powder on the surface of the ceramic spray film 3, and strengthening the bonding force between the ceramic powders, and then In the low-temperature sintering method, the molten particle binder is consolidated to form the protective film 4, and the fabrication of the upper electrode 91 of the present invention is completed. The sintering temperature is lower than the melting point of the electrode plate body 1 and the ceramic spray film 3.

The effects of the present invention are illustrated below by experimental results.

Referring to Table 1, the first experimental example is the upper electrode 91 produced according to the manufacturing step of the present invention. The difference between the experimental example 2 and the experimental example 1 is that the experimental example 2 is not covered on the surface of the ceramic sprayed film 3. Membrane 4. The difference between the comparative example and the experimental example 1 is that the protective film 4 and the buffer layer 12 are absent in the comparative example, and the comparative example is one in which the ceramic spray film 3 is directly coated on the body layer 11 of the electrode plate body 1 via Roughened surface.

In addition, the adhesion of the ceramic spray film 3 to the electrode plate 1 in this experiment is judged by the standard test method (Standard Test Method for Adhesion or Cohesion Strength of Thermal) using ASTM C633 thermal spray coating. Spray Coatings), after the test piece was subjected to a thermal shock test at 100 ° C for 30 cycles, and then the test piece was subjected to a tensile test, wherein the higher the tensile stress that the test piece can withstand, the more the adhesion between the test layers is. it is good. The judgment of the corrosion resistance was obtained by observing the appearance of the surface of the test piece after the test piece was sprayed for 72 hours by a salt spray test.

It can be seen from the experimental results of Table 1 that the tensile stresses of Experimental Example 1 and Experimental Example 2 of the present invention are 20 MPa and 18 MPa, respectively, and the comparative example is 12 MPa, indicating that the adhesion of the present invention is superior to the comparative example because The buffer layer 12 of the invention is obtained by anodizing the body layer 11, that is, the buffer layer 12 belongs to a part of the body layer 11, so that the bonding force between the buffer layer 12 and the body layer 11 is good. At the same time, the buffer layer 12 is an oxide, and the ceramic spray film 3 belongs to the ceramic material, so the difference in thermal expansion coefficient between the buffer layer 12 and the ceramic spray film 3 is small, and both of the thermal expansion and contraction The volume difference is also small, so that cracks and pores can be generated at the interface between the two due to thermal expansion and contraction, and the adhesion of the ceramic spray film 3 to the buffer layer 12 can be improved. In addition, since the buffer layer 12 produced by the anode treatment is a porous structure, the present invention has more surface area increased by the pore structure than the comparative example, and has a better mechanical bonding effect and enhances the Adhesion of the ceramic spray film 3.

On the other hand, during the salt spray for 72 hours, the salt mist diffuses to the boundary between the ceramic spray film 3 and the electrode plate body 1 through the cracks and pores of the ceramic spray film 3. Since the ceramic spray film 3 of the comparative example is directly disposed on the body layer 11 of the electrode plate body 1, the salt spray erodes the body layer 11 at the boundary between the ceramic spray film 3 and the electrode plate body 1. And the ceramic spray film 3 is not firmly attached to the body layer 11, which causes a phenomenon in which the film layer of the comparative example is convex.

In contrast, the film layer of the present invention is still in a good state because the present invention forms the buffer layer 12 having corrosion resistance between the ceramic spray film 3 and the body layer 11 of the electrode plate body 1 and diffuses when the salt spray is diffused. When the ceramic spray film 3 and the electrode plate body 1 are in contact with each other, the salt spray is hard to erode the buffer layer 12, so that the ceramic spray film 3 is firmly adhered to the buffer layer 12. Further, the buffer layer 12 can also provide protection when the ceramic spray film 3 is eroded to an unacceptable use, so the corrosion resistance of the present invention is superior to the comparative example. In addition, although the film layers of the experimental example 1 and the experimental example 2 are not different, since the protective film 4 is further provided on the ceramic spray film 3 in the first experimental example, the corrosion resistance of the first experimental example is superior to the experiment. Example 2.

It should be noted that when the upper electrode 91 of the present embodiment is used for a while, it is damaged by the erosion of corrosive gas. If the protective film 4 is damaged and the ceramic spray film 3 can be used, the upper electrode 91 can be cleaned first, and the protective film 4 can be formed again. If the protective film 4 and the ceramic spray film 3 are unsuitable, the plasma spray film 3 may be again sprayed to form a new ceramic spray film 3, and then the protective film 4 is formed. In addition, if the ceramic tubes 2 are damaged, they may be replaced. Therefore, the body layer 11 of the electrode plate body 1 is not damaged by corrosive gas erosion, and can be repeatedly used again, which not only environmentally friendly but also reduces equipment costs.

In summary, the difference between the thermal expansion coefficients of the body layer 11 and the ceramic spray film 3 is buffered by the buffer layer 12, and the buffer layer 12 and the ceramic spray film 3 are both ceramic materials, so both It can be tightly combined without being easily peeled off. At the same time, the buffer layer 12 also has anti-corrosion effect, and when the protective film 4 and the ceramic spray film 3 are damaged, the buffer layer 12 can also protect the body layer 11 from being corroded by corrosive gases, and therefore, the electrode The body layer 11 of the panel 1 can be reused to reduce the cost of equipment, so that the object of the present invention can be achieved.

The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.

1. . . Electrode plate

11. . . Body layer

12. . . The buffer layer

121. . . Rough surface

13. . . Vent

14. . . Ring hole surface

2. . . ceramic pipe

twenty one. . . End face

3. . . Ceramic spray film

4. . . Protective film

8. . . Gas input device

9. . . Reaction tank device

91. . . Upper electrode

92. . . Reaction space

93. . . Reaction chamber

94. . . Lower electrode

Figure 1 is an exploded perspective view showing a preferred embodiment of the upper electrode of the reaction tank apparatus of the etching apparatus of the present invention;

Figure 2 is a side cross-sectional view showing the preferred embodiment of the present invention when it is placed over a reaction chamber;

Figure 3 is a partial cross-sectional view of the preferred embodiment; and

Figure 4 is a manufacturing flow diagram of the preferred embodiment.

1. . . Electrode plate

11. . . Body layer

12. . . The buffer layer

121. . . Rough surface

13. . . Vent

14. . . Ring hole surface

2. . . ceramic pipe

twenty one. . . End face

3. . . Ceramic spray film

4. . . Protective film

Claims (10)

An upper electrode of a reaction tank device of an etching apparatus, comprising: an electrode plate body comprising a body layer, a buffer layer disposed on the body layer, and a plurality of vent holes penetrating the body layer and the buffer layer up and down; And a ceramic spray film disposed on the buffer layer. The upper electrode of the reaction tank apparatus of the etching apparatus according to claim 1, wherein the buffer layer is a metal oxide layer formed by anodization. The upper electrode of the reaction tank device of the etching apparatus according to claim 2, wherein the buffer layer has a thickness of 5 to 150 μm. The upper electrode of the reaction tank device of the etching apparatus according to claim 2, wherein the buffer layer has a rough surface provided for the ceramic spray film and has irregularities, and the roughness of the rough surface is 0.3 ~40μm. The upper electrode of the reaction tank device of the etching apparatus according to the fourth aspect of the invention, wherein the material of the ceramic spray film is cerium oxide, zirconium oxide, aluminum oxide, titanium oxide, magnesium oxide, calcium oxide or cerium oxide. , chromium oxide, or a combination of these. The upper electrode of the reaction tank device of the etching apparatus according to claim 4, wherein the ceramic spray film has a thickness of 10 to 3000 μm. The upper electrode of the reaction tank apparatus of the etching apparatus according to any one of claims 1 to 6, further comprising a plurality of ceramic tubes coaxially plugged into the vent holes. The upper electrode of the reaction tank device of the etching apparatus according to claim 4, further comprising a plurality of ceramic tubes coaxially plugged into the vent holes, wherein the ceramic tubes each include a adjacent one An end face of the rough surface of the buffer layer, and the ceramic spray film is disposed on an end surface of the ceramic tube and a rough surface of the buffer layer. The upper electrode of the reaction tank device of the etching apparatus according to claim 8 of the patent application, further comprising a protective film coated on the ceramic spray film, the material of the protective film being a bismuth compound, a chromium compound, or the like One combination. The upper electrode of the reaction tank device of the etching apparatus according to claim 9, wherein the protective film has a thickness of 5 nm to 10 μm.