TW201342514A - Separation apparatus, separation system, separation method and computer storage medium - Google Patents

Abstract

This invention aims at appropriately and efficiently conducting a separation process of a processed substrate and a supporting substrate. A separation apparatus 30 comprises a first holding section 110 for holding a processed substrate W, a second holding section 111 for holding a supporting substrate S, a movement mechanism 150 for moving at least the first holding section 110 or the second holding section 111 relatively in the horizontal direction, a load cell 180 for measuring the load acted on the processed substrate W and the supporting substrate S upon separating the processed substrate W and the supporting substrate S, and a control section 350 for controlling a driving section 173 in a horizontal moving section 152 of the movement mechanism 150.

Description

Stripping device, stripping system, stripping method and computer memory medium

The present invention relates to a peeling device for peeling a superposed substrate into a substrate to be processed and a supporting substrate, a peeling system including the peeling device, a peeling method using the peeling device, and a computer memory medium.

In recent years, for example, in the manufacturing process of semiconductor devices, the large diameter of semiconductor wafers (hereinafter referred to as "wafers") has continued to progress. Further, in a specific step of mounting or the like, the wafer is required to be thinned. Here, for example, when a large-diameter thin wafer is directly conveyed and polished, there is a fear that warpage or cracking of the wafer occurs. Therefore, in order to reinforce the wafer, for example, a process of attaching the wafer to the wafer or the glass substrate of the support substrate is performed. After that, a predetermined process such as a polishing process of the wafer is performed in a state where the wafer and the support substrate are bonded to each other, and then the wafer and the support substrate are peeled off.

Peeling of the wafer from the support substrate is performed using, for example, a peeling device. The peeling device includes, for example, a first holder that holds the wafer, a second holder that holds the support substrate, and a nozzle that ejects liquid between the wafer and the support substrate. In the stripping device, the jetting pressure between the wafer to be bonded and the supporting substrate from the nozzle pair is greater than the bonding strength between the wafer and the supporting substrate, and the jetting pressure is more than twice the bonding strength. In order to perform the peeling of the wafer and the support substrate (Patent Document 1).

[Practical Technical Literature] [Patent Literature]

Patent Document 1 Japanese Patent Laid-Open No. Hei 9-167724

However, in the case of using the peeling device described in Patent Document 1, since the liquid is ejected with a strong ejection pressure, the wafer or the support substrate is damaged. In particular, it is easy to be damaged due to the thinning of the wafer.

Therefore, in order to avoid damage of the wafer or the support substrate, it is considered to eject the liquid at a small ejection pressure to peel off the wafer and the support substrate. However, in this case, it takes a lot of time to peel off the wafer and the support substrate.

In view of this point, an object of the present invention is to appropriately and efficiently perform a peeling treatment of a substrate to be processed and a support substrate.

In order to achieve the above object, the present invention provides a peeling device which bonds a bonded substrate of a substrate to be processed and a support substrate by an adhesive, and is peeled off into a substrate to be processed and a support substrate, and is characterized in that: the first holding portion is provided and held The substrate is processed; the second holding portion holds the support substrate; and the moving mechanism moves the first holding portion or the second holding portion in a horizontal direction; and the load measuring unit measures the peeling of the substrate to be processed from the support substrate. The load on the substrate to be processed and the support substrate; and the control unit controls the moving mechanism based on the load measured by the load measuring unit.

According to the invention, at least the first holding portion or the second holding portion is relatively moved in the horizontal direction by the moving mechanism, and the substrate to be processed and the supporting substrate are peeled off. After that, when the substrate to be processed is separated from the support substrate by the load measuring unit, the load acting on the substrate to be processed and the support substrate is controlled, and the moving mechanism is controlled in accordance with the load measured by the load measuring unit. So that the mobile mechanism can be carried out Feedback control allows an appropriate load to be applied to the substrate to be processed and the support substrate. As a result, damage to the substrate to be processed and the support substrate can be suppressed. Further, the time for peeling off the substrate to be processed and the support substrate can be optimized, and the amount of processing for the peeling treatment can be improved. As described above, according to the present invention, the peeling treatment of the substrate to be processed and the support substrate can be appropriately and efficiently performed.

The control unit controls the moving mechanism so that the load measured by the load measuring unit is constant.

When the load measured by the load measuring unit exceeds the allowable load, the control unit may control the moving mechanism to lower the speed of the relative movement of the first holding unit or the second holding unit.

The load measuring unit may be a load detecting element.

The peeling device includes a load correcting unit, and the measurement accuracy of the load is better than the load measuring unit, and may be used for performing calibration of the load measuring unit.

The load correcting unit may be a load detecting element.

According to another aspect of the invention, there is provided a peeling system including the peeling device, comprising: a processing station; the peeling device; and a first cleaning device that washes the substrate to be processed from which the peeling device is peeled off, and a second cleaning device that washes the support substrate that is peeled off by the peeling device; carries out the inbound station, carries the processed substrate, the support substrate, or the superposed substrate into and out of the processing station; and transports the device to and from the processing station Transfer the substrate to be processed, the support substrate, or the overlap substrate between the inbounds.

According to still another aspect of the invention, a peeling method is provided in which a bonded substrate is bonded to a substrate to be processed and a supporting substrate by a bonding agent, and is peeled off into a substrate to be processed and a supporting substrate, and the method includes the following steps: The mechanism moves the first holding portion holding the substrate to be processed or the second holding portion holding the support substrate in a horizontal direction to peel the substrate to be processed and the support substrate, and when the substrate to be processed is separated from the support substrate by the load measuring unit Acting on the substrate to be processed The load on the support substrate is controlled by the load measured by the load measuring unit.

The moving mechanism is controlled such that the load measured by the load measuring unit is constant.

When the load measured by the load measuring unit exceeds the allowable load, the moving mechanism may be controlled to lower the speed of the relative movement of the first holding portion or the second holding portion.

The load measuring unit may be a load detecting element.

The load measuring unit that performs the measurement accuracy of the load is better than the load measuring unit, and the load measuring unit may perform the correction.

The load correcting unit may be a load detecting element.

According to still another aspect of the invention, a computer readable memory medium is provided which is recorded on a computer for controlling a control unit of the stripping device for performing the stripping method by the stripping device.

According to the present invention, the peeling treatment of the substrate to be processed and the support substrate can be appropriately and efficiently performed.

1‧‧‧ peeling system

2‧‧‧ moving out of the station

3‧‧‧ Processing station

4‧‧‧post processing station

5‧‧‧Interface station

6‧‧‧ Wafer handling area

7‧‧‧Checking device

8‧‧‧After inspection, washing station

10‧‧‧ Wafer cassette mounting table

11‧‧‧ Wafer cassette mounting board

20‧‧‧1st handling device

30‧‧‧ peeling device

31‧‧‧1st cleaning device

32‧‧‧2nd handling device

33‧‧‧2nd cleaning device

40‧‧‧ joint cleaning device

41‧‧‧ Non-joining surface cleaning device

42‧‧‧Reversal device

50‧‧‧Transportation

51‧‧‧3rd handling device

100, 190, 250, 290 ‧ ‧ processing containers

101, 260‧‧ vents

102, 261‧‧‧ exhaust

103, 206, 262‧‧‧ exhaust pipe

110, 270‧‧‧1st holding department

111, 271‧‧‧2nd Maintenance Department

120, 201, 301‧‧ ‧ Body Department

121, 202, 302‧‧‧ porous materials

122‧‧‧Sucking space

123, 140‧‧ ‧ suction tube

124, 141‧‧‧ heating mechanism

130, 160, 272, 281‧‧‧ support boards

150, 280‧‧‧ mobile agencies

151‧‧‧Lead moving department

152‧‧‧Horizontal Moving Department

161, 173, 282‧‧‧ drive department

162, 284‧‧‧ Supporting components

170, 210, 304‧‧‧ tracks

171, 283‧‧‧ Support

172‧‧‧Ball screw

180‧‧‧Load detection component

200, 300‧‧‧ porous suction cup

203, 303‧‧‧ suction cup drive

204‧‧‧ cup body

205‧‧‧Draining tube

211‧‧‧ mechanical arm

212‧‧‧cleaning liquid nozzle

213‧‧‧Nozzle Drive Department

214‧‧‧Standing Department

220, 223‧‧‧ supply tube

221‧‧‧cleaning fluid supply

222, 225‧‧‧Supply of machine groups

224‧‧‧ gas supply

230‧‧‧Rotating chuck

240‧‧‧Whitenuuli sucker

241‧‧‧Support arm

242‧‧‧1st drive department

243‧‧‧2nd drive department

305‧‧‧ sensor

310‧‧‧Photographing device

311‧‧‧half mirror

312‧‧‧Lighting device

350‧‧‧Control Department

400‧‧‧Main load detection component

C _S , C _T , C _W ‧‧‧ wafer cassette

G‧‧‧Adhesive

S‧‧‧Support wafer

S _J , W _J ‧‧‧ joint surface

S _N , W _N ‧‧‧ non-joined surface

T‧‧‧ coincident wafer

W‧‧‧Processed Wafer

P1‧‧‧ delivery position

P2‧‧‧ alignment position

Fig. 1 is a plan view schematically showing the configuration of a peeling system of the embodiment.

Figure 2 Side view of the processed wafer and the supporting wafer.

Fig. 3 is a longitudinal sectional view schematically showing the configuration of a peeling device.

Fig. 4 is a schematic cross-sectional view showing the structure of the peeling device.

Fig. 5 is a longitudinal sectional view schematically showing the configuration of the first cleaning device.

Fig. 6 is a schematic cross-sectional view showing the configuration of the first cleaning device.

Fig. 7 is a longitudinal sectional view schematically showing the configuration of a second cleaning device.

Fig. 8 is a side view schematically showing the configuration of the second conveying device.

Fig. 9 is a longitudinal sectional view schematically showing the configuration of the inverting device.

Fig. 10 is a longitudinal sectional view schematically showing the configuration of an inspection apparatus.

Fig. 11 is a schematic cross-sectional view showing the configuration of an inspection apparatus.

Figure 12 shows a flow chart of the main steps of the stripping process.

Figure 13 shows an explanatory view of how the superposed wafers are preheated.

Fig. 14 is an explanatory view showing a state in which the superposed wafer is placed on the second holding portion.

FIG. 15 is an explanatory view showing a state in which the wafer is superposed on the first holding portion and the second holding portion.

Fig. 16 is an explanatory view showing a state in which the second holding portion is moved in the vertical direction and the horizontal direction.

Figure 17 shows an illustration of how the wafer to be processed and the supporting wafer are peeled off.

Fig. 18 is an explanatory view showing a state in which the wafer to be processed is transferred from the first holding portion of the peeling device to the white Nuo suction cup of the second conveying device.

Fig. 19 is an explanatory view showing a state in which the processed wafer is transferred from the white Nuoly suction cup of the second conveying device to the porous suction cup of the first cleaning device.

FIG. 20 is an explanatory view showing a state in which the processed wafer is transferred from the white Nuo suction cup of the third conveying device to the second holding portion of the reversing device.

FIG. 21 is an explanatory view showing a state in which the processed wafer is transferred from the second holding portion of the inverting device to the first holding portion.

FIG. 22 is an explanatory view showing a state in which the processed wafer is transferred from the second holding portion of the inverting device to the first holding portion.

FIG. 23 is an explanatory view showing a state in which the processed wafer is transferred from the first holding portion of the inverting device to the white Nuo suction cup of the third conveying device.

Fig. 24 is a longitudinal cross-sectional view schematically showing the configuration of a peeling device of another embodiment.

Fig. 25 is a longitudinal cross-sectional view schematically showing the configuration of a peeling device of another embodiment.

[Best Mode for Carrying Out the Invention]

Hereinafter, embodiments of the present invention will be described. 1 is a schematic view showing the embodiment A plan view of the composition of the stripping system 1.

As shown in FIG. 2, the peeling system 1 is bonded to the processed wafer W as a substrate to be processed and the wafer W as a supporting substrate of the supporting substrate as a superposed wafer T, and is peeled off to be processed. Wafer W and support wafer S. Hereinafter, in the wafer W to be processed, a surface to which the bonding agent G and the supporting wafer S are bonded is referred to as a “joining surface W _J ”, and a surface on the opposite side of the bonding surface W _J is referred to as a “non-joining surface”. W _N "". Similarly, in the support wafer S, a surface to which the bonding agent G and the wafer W to be processed are bonded is referred to as a "joining surface S _J "; and a surface on the opposite side of the bonding surface S _J is referred to as a "non-joining" Face S _N "". Further, the wafer W to be processed is a wafer to be a product, and for example, a plurality of elements including a plurality of electronic circuits are formed on the bonding surface W _J . Further, the processed wafer W is subjected to, for example, a non-joining surface W _N to be thinned (for example, having a thickness of 50 μm to 100 μm). The support wafer S is a disk shape having the same diameter as the diameter of the wafer W to be processed, and supports the wafer of the wafer W to be processed. In the present embodiment, a case where a wafer is used as a supporting substrate will be described, but other substrates such as a glass substrate may be used.

As shown in FIG. 1, the peeling system 1 has a structure in which the loading/unloading station 2, the processing station 3, and the interface station 5 are integrally connected, for example, the inbound and outbound stations 2, and the wafer cassettes C _W , C _S , and C are externally connected. _When moving in and out, the wafer cassettes C _W , C _S , and C _T can respectively accommodate a plurality of processed wafers W, a plurality of supporting wafers S, and a plurality of coincident wafers T; and the processing station 3 has a wafer W to be processed, The processing unit supports the wafer S and the superposed wafer T to perform predetermined processing; the interface station 5 transfers the processed wafer W between the processing stations 4 after being adjacent to the processing station 3.

The inbound and outbound stations 2 and the processing station 3 are arranged side by side in the X direction (upward and downward directions in FIG. 1). The wafer transfer area 6 is formed between the inbound and outbound stations 2 and the processing station 3. The interface station 5 is disposed on the negative side of the Y direction of the processing station 3 (the left side in FIG. 1). The inspection device 7 is disposed on the positive side (the upper side in FIG. 1) of the X direction of the interface station 5, and the wafer W to be processed before being transferred to the post processing station 4 is inspected. Further, on the opposite side of the inspection device 7 of the package interface station 5, that is, the negative direction side of the X direction of the interface station 5 (the lower side in FIG. 1), the post-inspection cleaning station 8 is disposed, and the processed wafer after inspection is performed. W washes the joint surface W _J and the non-joining surface W _N and reverses the front and back surfaces of the wafer W to be processed.

The wafer cassette mounting table 10 is provided for moving out of the inbound station 2. The wafer cassette mounting table 10 is provided with a plurality of sheets, for example, three wafer cassette mounting plates 11. The wafer cassette mounting plates 11 are arranged side by side in the Y direction (the horizontal direction in FIG. 1). These wafer cassette mounting plate 11, the release system may be of an external wafer cassette C _W, C _S, C _{T-fitting-out,} placing the wafer cassette C _W, C _S, C _T . In this manner, the carry-in/out station 2 is configured to hold a plurality of processed wafers W, a plurality of supporting wafers S, and a plurality of coincident wafers T. Further, the number of the wafer cassette mounting plates 11 is not limited to this embodiment, and can be arbitrarily determined. Further, the plurality of superposed wafers T that have been carried into the inbound and outbound stations 2 are inspected in advance, and are determined to include the coincident wafer T containing the normal processed wafer W and the coincident wafer T containing the processed wafer W having defects. .

The first conveyance device 20 is disposed in the wafer conveyance region 6. The first conveying device 20 has, for example, a transfer arm that can be arbitrarily moved in the vertical direction, the horizontal direction (Y direction, the X direction), and the vertical axis. The first conveyance device 20 moves in the wafer conveyance region 6, and conveys the processed wafer W, the support wafer S, and the superposed wafer T between the carry-in/out station 2 and the processing station 3.

The processing station 3 has a peeling device 30 that peels the superposed wafer T into a processed wafer W and a supporting wafer S. In the negative direction side (the left side in FIG. 1) of the peeling device 30 in the Y direction, the first cleaning device 31 that cleans the peeled processed wafer W is disposed. The second conveyance device 32 is provided between the peeling device 30 and the first cleaning device 31. Moreover, the second cleaning device 33 that cleans the peeled support wafer S is disposed on the positive side (the right side in FIG. 1) of the peeling device 30 in the Y direction. In this way, the processing station 3 is arranged side by side in the order of the first cleaning device 31, the second conveying device 32, the peeling device 30, and the second cleaning device 33 from the side of the interface station 5.

The inspection device 7 checks for the presence or absence of the residue of the adhesive G on the wafer W to be processed which is peeled off by the peeling device 30. Further, after the inspection, the cleaning station 8 cleans the wafer W to be processed from the inspection device 7 to confirm the residue of the adhesive G. The post-inspection cleaning station 8 has a bonding surface cleaning device 40 that cleans the bonding surface W _{J of the} processed wafer W, and a non-joining surface cleaning device 41 that cleans the non-joining surface W of the processed wafer W. _N ; and the inverting device 42 reverses the front side of the wafer W to be processed upside down. The joint surface cleaning device 40, the reversing device 42, and the non-joining surface cleaning device 41 are arranged side by side in the Y direction from the side of the post-processing station 4.

The third station 51 that can move freely on the transport path 50 extending in the Y direction is provided in the interface station 5. The third transport device 51 can be arbitrarily moved in the vertical direction and around the vertical axis (θ direction), and the processed wafer can be transported between the processing station 3, the post-processing station 4, the inspection device 7, and the post-inspection cleaning station 8. W.

Further, the post-processing station 4 performs a predetermined post-processing on the wafer W to be processed which is peeled off at the processing station 3. As a predetermined post-processing, for example, a process of mounting the wafer W to be processed, a process of performing electrical property inspection of a component on the wafer W to be processed, or a process of cutting the wafer to be processed into a wafer is performed.

Next, the configuration of the above-described peeling device 30 will be described. As shown in FIG. 3, the peeling device 30 has a processing container 100 in which the inside can be sealed. On the side surface of the processing container 100, a processing wafer W, a supporting wafer S, and a loading/unloading inlet (not shown) of the superposed wafer T are formed, and an opening and closing gate (not shown) is provided at the loading/unloading port.

An exhaust port 101 for exhausting the internal gas atmosphere of the processing container 100 is formed on the bottom surface of the processing container 100. The exhaust port 101 is connected to an exhaust pipe 103 of, for example, an exhaust device 102 that communicates with a vacuum pump or the like.

Inside the processing container 100, the first holding portion 110 holds and holds the wafer W to be processed on the bottom surface thereof, and the second holding portion 111 holds the supporting wafer S on the top surface thereof and holds it. The first holding portion 110 is provided above the second holding portion 111 and disposed to face the second holding portion 111 . In other words, in the inside of the processing container 100, the wafer W to be processed is placed on the upper side, and the supporting wafer S is placed on the lower side, and the superposed wafer T is subjected to a peeling process.

For the first holding portion 110, for example, a multi-hole chuck is used. The first holding portion 110 has a flat body portion 120. On the bottom surface side of the main body portion 120, a porous material 121 which is a porous medium is provided. The porous material 121 has, for example, a diameter nearly the same as that of the wafer W to be processed, and is in contact with the non-joining surface W _N of the wafer W to be processed. Further, as the porous material 121, for example, tantalum carbide can be used.

Further, inside the body portion 120, a suction space 122 is formed above the porous material 121. The suction space 122 is formed, for example, to cover the porous material 121. The suction space 122 is connected to the suction pipe 123. The suction pipe 123 is connected to, for example, a vacuum generating device (not shown) such as a vacuum pump. The suction pipe 123 sucks the non-joining surface W _N of the processed wafer through the suction space 122 and the porous material 121 , and adsorbs and holds the processed wafer W on the first holding portion 110 .

Further, inside the main body portion 120, above the suction space 122, a heating mechanism 124 for heating the wafer W to be processed is provided. The heating mechanism 124 uses, for example, a heater.

A support plate 130 that supports the first holding portion 110 is provided on the top surface of the first holding portion 110. The support plate 130 supports the ceiling surface of the processing container 100. Further, the support plate 130 of the present embodiment may be omitted, and the first holding portion 110 may be brought into contact with the ceiling surface of the processing container 100 to be supported.

Inside the second holding portion 111, a suction pipe 140 for holding and holding the supporting wafer S is provided. The suction pipe 140 is connected to, for example, a vacuum generating device (not shown) such as a vacuum pump.

Further, inside the second holding portion 111, a heating mechanism 141 that supports the heating of the wafer S is provided. The heating mechanism 141 uses, for example, a heater.

Below the second holding portion 111, a moving mechanism 150 that moves the second holding portion 111 and the supporting wafer S in the vertical direction and the horizontal direction is provided. The moving mechanism 150 has a vertical moving portion 151 that moves the second holding portion 111 in the vertical direction and a horizontal moving portion 152 that moves the second holding portion 111 in the horizontal direction.

The vertical moving portion 151 has a support plate 160 that supports the bottom surface of the second holding portion 111, and a driving portion 161 that lifts the support plate 160 such that the first holding portion 110 and the second holding portion 111 are close to each other in the vertical direction and away from each other; 162, support support board 160. The drive unit 161 has, for example, a ball screw (not shown) and a motor (not shown) that rotates the ball screw. In addition, support structure The member 162 is configured to be arbitrarily expandable and contractible in the vertical direction, and is provided, for example, at four places between the support plate 160 and a support 171 to be described later.

As shown in FIG. 4, the horizontal moving portion 152 has a pair of rails 170 and 170 extending in the X direction (left-right direction in FIG. 4), a support body 171 attached to the rail 170, a ball screw 172, and a support body 171. Connecting and extending along the rail 170; and the driving portion 173, rotating the ball screw 172. The drive unit 173, for example, a built-in motor (not shown), can move the support body 171 along the rail 170 by rotating the ball screw 172.

As shown in FIG. 3 and FIG. 4, the support 171 is provided with a load detecting element 180 for measuring the wafer W to be processed and the supporting wafer S when the wafer W to be processed is peeled off from the supporting wafer S. The load measurement unit of the load. After that, the load measured by the load detecting element 180 is output to the control unit 350 which will be described later. The control unit 350 controls the rotational speed (or torque) of the drive unit 173 in accordance with the load measured by the load detecting element 180, so that the load acting on the wafer W to be processed and the supporting wafer S becomes a constant desired load. In addition, the load range that the load detecting component 180 can measure is at least a range including a load acting on the processed wafer W and the supporting wafer S, for example, 0N to 2000N.

Further, a lift pin (not shown) is provided below the second holding portion 111 for supporting the wafer T or the support wafer S to be lifted and lowered from below. The lift pin is formed to penetrate through the second holding portion 111. A hole (not shown) can protrude from the top surface of the second holding portion 111.

Next, the configuration of the first cleaning device 31 will be described. As shown in FIG. 5, the first cleaning device 31 has a processing container 190 that can seal the inside. On the side surface of the processing container 190, a loading/unloading port (not shown) of the wafer W to be processed is formed, and an opening and closing gate (not shown) is provided at the loading and unloading port.

A porous chuck 200 that holds and rotates the wafer W to be processed is provided at a central portion of the processing container 190. The porous chuck 200 has a flat body portion 201 and a porous material 202 which is provided on the top surface side of the body portion 201 and which is a porous medium. The porous material 202 has, for example, a diameter nearly the same as that of the wafer W to be processed, and is in contact with the non-joining surface W _N of the wafer W to be processed. Further, as the porous material 202, for example, tantalum carbide can be used. The porous material 202 is connected to a suction tube (not shown), and the processed wafer can be processed by sucking the non-joining surface W _{N of the} processed wafer W from the suction tube through the porous material 202. The W adsorption is maintained on the porous chuck 200.

Below the multi-hole chuck 200, a chuck driving unit 203 having a motor or the like is provided, for example. The multi-hole chuck 200 can be rotated by the chuck driving unit 203 to a predetermined speed. Further, the suction cup drive unit 203 is provided with a lifting drive source such as a pressure cylinder tube, and the multi-hole suction cup 200 can be arbitrarily moved up and down.

A cup body 204 is provided around the porous chuck 200 to receive and collect the liquid scattered or dropped from the wafer W to be processed. A discharge pipe 205 for discharging the recovered liquid and an exhaust pipe 206 for evacuating the gas atmosphere in the cup 204 are connected to the bottom surface of the cup 204.

As shown in Fig. 6, on the side of the cup body 204 in the negative X direction (the lower side in Fig. 6), a rail 210 extending in the Y direction (the horizontal direction in Fig. 6) is formed. The rail 210 is formed, for example, from the outside in the negative direction of the Y direction of the cup 204 (the left side in FIG. 6) to the outside in the positive direction of the Y direction (the right side in FIG. 6). The rail 210 is mounted with a robot arm 211.

As shown in FIGS. 5 and 6, the robot arm 211 supports the cleaning liquid nozzle 212, and the cleaning liquid nozzle 212 supplies a cleaning liquid, for example, an organic solvent of a solvent of the adhesive G, to the wafer W to be processed. The robot arm 211 is arbitrarily movable on the rail 210 by the nozzle driving unit 213 shown in FIG. In this way, the cleaning liquid nozzle 212 can be moved from the standby portion 214 on the outer side in the positive direction of the cup body 204 to the upper portion of the center of the wafer W to be processed in the cup 204, and further The wafer W to be processed can be moved in the radial direction of the wafer W to be processed. Further, the robot arm 211 can be arbitrarily moved up and down by the nozzle driving unit 213, and the height of the cleaning liquid nozzle 212 can be adjusted.

The cleaning liquid nozzle 212 uses, for example, a two-fluid nozzle. As shown in FIG. 5, the cleaning liquid nozzle 212 is connected to a supply pipe 220 that supplies the cleaning liquid to the cleaning liquid nozzle 212. The supply pipe 220 is in communication with the cleaning liquid supply source 221 that stores the cleaning liquid therein. A supply machine group 222 is provided in the supply pipe 220, and includes a valve for controlling the flow of the cleaning liquid, a flow rate adjusting unit, and the like. In addition, the cleaning liquid nozzle 212 is connected to a supply pipe 223 for supplying an inert gas such as nitrogen to the cleaning liquid nozzle 212. The supply pipe 223 is in communication with a gas supply source 224 that internally stores an inert gas. A supply machine group 225 is provided in the supply pipe 223, and includes a valve for controlling the flow of the inert gas, a flow rate adjusting portion, and the like. Thereafter, the cleaning liquid and the inert gas are mixed in the cleaning liquid nozzle 212, and the processed wafer W is supplied from the cleaning liquid nozzle 212. In addition, in the following, the case where the washing liquid and the inert gas are mixed is simply referred to as "cleaning liquid".

Further, a lift pin (not shown) may be provided below the porous chuck 200 to support the wafer W to be lifted and lowered from below. In this case, the lift pin penetrates through a through hole (not shown) formed in the porous chuck 200 and protrudes from the top surface of the porous chuck 200. Thereafter, the multi-hole chuck 200 is moved up and down instead of lifting the lift pins, and the processed wafer W is transferred between the porous chucks 200.

The configuration of the joint surface cleaning device 40 and the non-joining surface cleaning device 41 of the post-inspection cleaning station 8 is the same as that of the first cleaning device 31, and therefore the description thereof will be omitted.

Further, the configuration of the second cleaning device 33 is almost the same as the configuration of the first cleaning device 31 described above. As shown in FIG. 7, the second cleaning device 33 is provided with a rotary chuck 230 instead of the porous chuck 200 of the first cleaning device 31. The rotating chuck 230 has a horizontal top surface, and a suction port (not shown) for sucking the support wafer S is provided on the top surface, for example. The support wafer S can be adsorbed and held on the spin chuck 230 by suction from the suction port. The other configuration of the second cleaning device 33 is the same as that of the first cleaning device 31, and thus the description thereof will be omitted.

Also, the second cleaning device 33, also in the rotating clamp plate 230 is provided below the back cleaning nozzle (not shown), toward the back of the wafer W is processed, i.e., the non-bonding surface cleaning liquid ejection W _N. The non-joining surface W _{N of the} wafer W to be processed and the outer peripheral portion of the wafer W to be processed are cleaned by the cleaning liquid sprayed from the back surface cleaning nozzle.

Next, the configuration of the second conveying device 32 will be described. As shown in FIG. 8, the second conveying device 32 has a white Nuo suction cup 240 that holds the wafer W to be processed. White Nuori suction cup 240, Supported by the support arm 241. The support arm 241 is supported by the first drive unit 242. By the first driving unit 242, the support arm 241 can be arbitrarily rotated about the horizontal axis and can be expanded and contracted in the horizontal direction. Below the first drive unit 242, a second drive unit 243 is provided. By the second driving unit 243, the first driving unit 242 can be arbitrarily rotated around the vertical axis, and can be moved up and down in the vertical direction.

In addition, since the third conveying device 51 has the same configuration as the second conveying device 32, the description thereof is omitted. However, the second driving unit 243 of the third conveying device 51 is attached to the conveying path 50 shown in FIG. 1 , and the third conveying device 51 is movable on the conveying path 50 .

Next, the configuration of the above-described inverting device 42 will be described. As shown in FIG. 9, the inverting device 42 has a processing container 250 in which a plurality of devices are housed. On the side surface of the processing container 250, an unloading port (not shown) for carrying in and out of the wafer W to be processed by the third transport device 51 is formed, and an opening and closing gate (not shown) is provided at the loading port (not shown) (not shown). ).

An exhaust port 260 for exhausting the internal gas atmosphere of the processing container 250 is formed on the bottom surface of the processing container 250. The exhaust port 260 is connected to an exhaust pipe 262 such as an exhaust device 261 that communicates with a vacuum pump or the like.

Inside the processing container 250, the first holding portion 270 holds the wafer W to be processed on the bottom surface, and the second holding portion 271 holds the wafer W to be processed on the top surface. The first holding portion 270 is provided above the second holding portion 271 and disposed to face the second holding portion 271. The first holding portion 270 and the second holding portion 271 have, for example, the same diameter as the wafer W to be processed. Further, a white Nuo suction cup is used in the first holding portion 270 and the second holding portion 271. Thereby, the first holding portion 270 and the second holding portion 271 can hold the entire surface of one surface of the wafer W to be processed without contact.

A support plate 272 that supports the first holding portion 270 is provided on the top surface of the first holding portion 270. Further, the support plate 272 of the present embodiment may be omitted, and the first holding portion 270 may be brought into contact with the ceiling surface of the processing container 250 to be supported.

A moving mechanism 280 that moves the second holding portion 271 in the vertical direction is provided below the second holding portion 271. The moving mechanism 280 has a support plate 281 that supports the bottom surface of the second holding portion 271, and a driving portion 282 that lifts and lowers the support plate 281 so that the first holding portion 270 and the second holding portion 271 approach and move away from each other in the vertical direction. The driving portion 282 is supported by a support 283 provided on the bottom surface of the processing container 250. Further, a support member 284 that supports the support plate 281 is provided on the top surface of the support body 283. The support member 284 is configured to be arbitrarily stretchable in the vertical direction, and can be freely expanded and contracted when the support plate 281 is moved up and down by the drive unit 282.

Next, the configuration of the above-described inspection device 7 will be described. The inspection device 7 has a processing container 290 as shown in FIGS. 10 and 11 . On the side surface of the processing container 290, a carry-out port (not shown) of the wafer W to be processed is formed, and an opening and closing gate (not shown) is provided at the carry-out port.

In the processing container 290, a porous chuck 300 that holds the wafer W to be processed is provided. The porous chuck 300 has a flat body portion 301 and a porous material 302 which is provided on the top surface side of the body portion 301 and which is a porous medium. The porous material 302 has, for example, a diameter nearly the same as that of the wafer W to be processed, and is in contact with the non-joining surface W _N of the wafer W to be processed. Further, as the porous material 302, for example, tantalum carbide can be used. The porous material 302 is connected to a suction tube (not shown), and the processed wafer can be processed by sucking the non-joining surface W _{N of the} processed wafer W from the suction tube through the porous material 302. The W adsorption is maintained on the porous chuck 300.

Below the multi-hole chuck 300, a chuck driving portion 303 is provided. The porous suction cup 300 can be arbitrarily rotated by the suction cup driving portion 303. Further, the chuck driving unit 303 is attached to a rail 304 which is provided on the bottom surface of the processing container 290 and extends in the Y direction. By this suction cup driving portion 303, the multi-hole chuck 300 can be moved along the rail 304. That is, the porous chuck 300 can carry the processed wafer W into and out between the processing position of the processing wafer 290 and the alignment position P2 of the position of the notch of the processed wafer W. mobile.

The sensor 305 is disposed at the alignment position P2 to detect the position of the notch portion of the wafer W to be processed held by the porous chuck 300. The position of the notch portion can be detected by the sensor 305, and the position of the notch portion of the wafer W to be processed can be adjusted by rotating the multi-hole chuck 300 by the chuck driving portion 303.

The imaging device 310 is disposed on the side of the processing container 290 on the side of the alignment position P2. The photographing device 310 uses, for example, a wide-angle type CCD camera. A half mirror 311 is provided near the center of the upper portion of the processing container 290. The half mirror 311 is provided at a position facing the imaging device 310, and is disposed at an angle of 45 degrees from the vertical direction. Above the half mirror 311, an illumination device 312 capable of changing the illumination is provided, and the half mirror 311 and the illumination device 312 are fixed to the top surface of the processing container 290. Further, the imaging device 310, the half mirror 311, and the illumination device 312 are respectively disposed above the wafer W to be processed held by the porous chuck 300. The illumination from the illumination device 312 is illuminated downward through the half mirror 311. Therefore, the reflected light of the object located in the irradiation area is reflected by the half mirror 311 and is guided to the imaging device 310. That is, the photographing device 310 can photograph an object located in the illuminated area. Thereafter, the image of the processed wafer W to be imaged is output to a control unit 350, which will be described later, and the control unit 350 checks the presence or absence of the residue of the adhesive G on the wafer W to be processed.

The peeling system 1 described above is provided with a control unit 350 as shown in Fig. 1 . The control unit 350 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the processed wafer W, the supporting wafer S, and the superposed wafer T in the peeling system 1. Further, the program storage unit also stores an operation for controlling the drive systems of the various processing devices and the transfer device described above, and realizes a program of the peeling process described later in the peeling system 1. In addition, the program is stored in a computer readable memory medium H such as a computer readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like. The memory medium H can also be mounted to the control unit 350 from here.

Next, a method of peeling off the processed wafer W and the supporting wafer S which are performed using the peeling system 1 configured as above will be described. Figure 12 is a flow chart showing an example of the main steps of this stripping process.

First, a wafer cassette C _T containing a plurality of stacked wafers T, an empty wafer cassette C _W , and an empty wafer cassette C _{S are} placed on a predetermined wafer of the inbound and outbound stations 2 The cassette is placed on the board 11. The superposed wafer T in the wafer cassette C _T is taken out by the first transfer device 20 and transported to the peeling device 30 of the processing station 3. At this time, the wafer T is superposed so that the wafer W to be processed is placed on the upper side, and the support wafer S is placed on the lower side.

The superposed wafer T carried into the peeling device 30 is transferred to a lift pin (not shown) that has risen in advance. Thereafter, as shown in FIG. 13 , the wafer T is superposed on the first holding portion 110 and the second holding portion 111 and is not in contact with any of the first holding portion 110 and the second holding portion 111 . s position. After the predetermined time has elapsed in this state, the superposed wafer T is preheated by the heating means 124, 141. By this preliminary heating, even if the wafer W to be processed is adsorbed and held by the first holding portion 110 as will be described later, the thermal expansion of the wafer W to be processed can be suppressed. Therefore, compared with the conventional case where the first holding unit heats the wafer to be processed at a normal temperature, the present embodiment can suppress the warpage of the wafer W to be processed, and can suppress the wafer W to be processed and the first holding. The particles 110 are rubbed against each other to produce particles.

Thereafter, as shown in FIG. 14, the superposed wafer T is adsorbed and held by the second holding portion 111. After a predetermined period of time, the superposed wafer W is heated by the heating means 124, 141 to a predetermined temperature, for example, 200 ° C to 250 ° C. As a result, the adhesive G in the wafer T is softened. Thereafter, the second holding portion 111 is raised by the moving mechanism 150, and as shown in FIG. 15, the first holding portion 110 and the second holding portion 111 are held by sandwiching the overlap wafer T. At this time, the non-joining surface W _{N of the} wafer W to be processed is adsorbed and held by the first holding portion 110 , and the non-joining surface S _{N of the} supporting wafer S is adsorbed and held by the second holding portion 111 .

Next, the superposed wafer T is heated by the heating means 124, 141 to maintain the softened state of the adhesive G, and as shown in FIG. 16, the second holding portion 111 and the supporting wafer S are vertically and horizontally moved by the moving mechanism 150. The direction, ie obliquely below, moves. Then, as shown in FIG. 17, the wafer W to be processed held by the first holding portion 110 and the supporting wafer S held by the second holding portion 111 are peeled off (step A1 of FIG. 12).

In the first step A1, the load detecting element 180 measures the load acting on the wafer W to be processed and the supporting wafer S. Thereafter, the load measured by the load detecting element 180 is output to the control unit 350. The control unit 350 controls the rotation speed (or torque) of the driving unit 173 in accordance with the load measured by the load detecting element 180 to cause the load acting on the wafer W to be processed and the supporting wafer S. Become a certain expected load, for example 500N~1000N. As a result, the moving speed of the support 171 at the initial stage of the peeling process is small, and the peeling speed of the processed wafer W and the supporting wafer S is small (for example, 1 mm/sec), but the support 171 progresses as the peeling process progresses. The moving speed is increased, and the peeling speed is increased (for example, 15 to 16 mm/sec). Further, the desired load is set in accordance with the type of component on the wafer W to be processed, the processing performed on the wafer W to be processed, and the type of the adhesive G.

Here, if the load acting on the wafer W to be processed and the support wafer S is excessively large, the components on the wafer W to be processed may be damaged. Further, if the load is too large, the control unit 350 may detect an abnormality and the operation of the peeling device 30 may be stopped. On the other hand, if the load acting on the wafer W to be processed and the supporting wafer S is too small, it takes a lot of time to peel off the wafer W to be processed and the supporting wafer S. In the present embodiment, since the drive unit 173 can be feedback-controlled so that the load becomes a desired load, the wafer W to be processed and the support wafer S can be prevented from being damaged. Further, as the peeling process progresses, the peeling speed can be increased, and the time required for the peeling treatment can be optimized and shortened.

Further, in the step A1, the second holding portion 111 is moved by 100 μm in the vertical direction and by 300 mm in the horizontal direction. Here, in the present embodiment, the thickness of the adhesive G in the superposed wafer T is, for example, 30 μm to 40 μm, and the height of the element (protrusion portion) formed on the bonding surface W _J of the wafer W to be processed is, for example, 20 μm. Therefore, the distance between the component on the wafer W to be processed and the support wafer S becomes minute. On the other hand, for example, when the second holding portion 111 is moved only in the horizontal direction, the element is in contact with the support wafer S, and there is a fear that the element is damaged. In this case, by moving the second holding portion 111 in the horizontal direction and moving it in the vertical direction as in the present embodiment, it is possible to prevent the element from coming into contact with the support wafer S and suppress damage of the element. Further, the ratio of the moving distance in the vertical direction of the second holding portion 111 to the moving distance in the horizontal direction is set in accordance with the height of the element (protrusion portion) on the wafer W to be processed.

Thereafter, the processed wafer W peeled off by the peeling device 30 is transported to the first cleaning device 31 by the second transfer device 32. Here, a method of transporting the processed wafer W of the second transport device 32 will be described.

As shown in FIG. 18, the support arm 241 of the second conveyance device 32 is extended, and the white Nuo suction cup 240 is disposed below the wafer W to be processed held by the first holding portion 110. Thereafter, the white Null suction cup 240 is raised, and the suction of the processed wafer W from the suction pipe 123 in the first holding portion 110 is stopped. Thereafter, the wafer W to be processed is transferred from the first holding portion 110 to the white Nucleus suction cup 240. Then, the white Nuoly suction cup 240 is lowered to a predetermined position. Further, the wafer W to be processed is held in a non-contact state by the white Nucleus chuck 240. Therefore, the wafer W to be processed is held so as not to damage the elements on the bonding surface W _J of the wafer W to be processed. At this time, the second holding portion 111 moves to a position facing the first holding portion 110.

Next, as shown in FIG. 19, the holding arm 241 of the second conveying device 32 is rotated to move the cannino suction cup 240 to the upper side of the porous suction cup 200 of the first cleaning device 31, and the white Nuo suction cup 240 is reversed to be The processing wafer W faces downward. At this time, the perforated chuck 200 is raised above the cup 204 and allowed to stand by. Thereafter, the processed wafer W is transferred from the Bainuuli chuck 240 to the porous chuck 200 to be adsorbed and held.

In this manner, the wafer W to be processed is adsorbed and held by the porous chuck 200, and the porous chuck 200 is lowered to a predetermined position. Next, the cleaning nozzle 212 of the standby unit 214 is moved by the robot arm 211 to the upper side of the center portion of the wafer W to be processed. Thereafter, the wafer W to be processed is rotated by the porous chuck 200, and the cleaning liquid is supplied from the cleaning liquid nozzle 212 to the bonding surface W _{J of the} wafer W to be processed. By the centrifugal force the cleaning liquid supplied to the joint surface of the wafer W to be processed W _J whole surface diffusion, cleaning the joint surface of the treated wafer W W _J (step 12 of FIG. A2).

Here, the plurality of coincident wafers T loaded into the carry-in/out station 2 as described above are inspected in advance, and it is determined that the superposed wafer T containing the normal processed wafer W and the processed wafer W having defects are contained. Coincident wafer T.

The normal processed wafer W that has been peeled off from the normal overlap wafer T is transported to the inspection device 7 by the third transport device 51 with the non-joining surface W _N facing downward, after the joint surface W _{J is} cleaned in step A2. The conveyance of the wafer W to be processed by the third conveyance device 51 is almost the same as the conveyance of the wafer W to be processed by the second conveyance device 32, and therefore the description thereof will be omitted.

The wafer W to be processed conveyed to the inspection device 7 is held on the porous chuck 300 at the transfer position P1. Next, the suction chuck drive unit 303 moves the porous chuck 300 to the alignment position P2. Next, the position of the notch portion of the wafer W to be processed is detected by the sensor 305, and the porous chuck 300 is rotated by the chuck driving portion 303. Then, the position of the notch portion of the wafer W to be processed is adjusted, and the wafer W to be processed is placed in a predetermined direction.

Thereafter, the multi-hole chuck 300 is moved by the chuck driving unit 303 from the alignment position P2 to the transfer position P1. When the wafer W to be processed passes under the half mirror 311, the wafer W to be processed is illuminated from the illumination device 312. The reflected light on the processed wafer W generated by the illumination is introduced into the imaging device 310, and the imaging device 310 captures the image of the bonding surface W _J of the processed wafer W. The image of the joint surface W _J of the processed wafer W to be imaged is output to the control unit 350, and the control unit 350 checks the presence or absence of the residue of the adhesive G on the joint surface W _J of the wafer W to be processed (Fig. 12). Step A3).

When the residue of the adhesive G is confirmed in the inspection device 7, the wafer W to be processed is transported by the third transport device 51 to the joint surface cleaning device 40 of the post-inspection cleaning station 8, and the joint surface cleaning device 40 is used. The adhesive G on the joint surface W _J is removed (step A4 of Fig. 12). In addition, this step A4 is the same as the above-described step A2, and therefore its description is omitted. Further, for example, when the residue of the adhesive G is not confirmed in the inspection device 7, the step A4 may be omitted.

When the bonding surface W _J is cleaned, the wafer W to be processed is transported to the inverting device 42 by the third transport device 51, and the front and back surfaces are reversed by the inverting device 42, that is, the vertical direction is reversed (step A5 in Fig. 12). Here, a method of inverting the processed wafer W generated by the inverting device 42 will be described.

40 is conveyed to the bonding state of the washing apparatus to be washed joint surface of the processing target wafer W _J W, shown in Figure 20, the third order by Bernoulli chuck 240 of the conveying device 51 holding the joint surface W _J Inverting device 42. After that, the wafer W to be processed is transferred to the second holding portion 271 of the inverting device 42 with the bonding surface WJ facing upward, and the second holding portion 271 holds the entire non-joining surface W _N of the wafer W to be processed. surface.

Then, the white Nuo suction cup 240 of the third conveying device 51 is retracted from above the second holding portion 271, and then the second holding portion 271 is raised by the driving portion 283, in other words, as shown in Fig. 21 The first holding unit 270 is approached. Then, the first holding portion 270 holds the bonding surface W _{J of the} wafer W to be processed, stops the holding of the wafer W to be processed by the second holding portion 271, and transfers the wafer W to be processed to the first holding portion 270. . As a result, as shown in FIG. 22, the first holding portion 270 holds the wafer W to be processed in a state where the non-joining surface W _N faces downward.

Thereafter, the second holding portion 271 is lowered to move the first holding portion 270 away from the second holding portion 271, and then the white Nuo suction cup 240 of the retracted third conveying device 51 is rotated about the horizontal axis. Then, the white Nuo suction cup 240 is placed below the first holding portion 270 in a state where the white Nuo suction cup 240 faces upward. Next, the white Null suction cup 240 is raised, and the holding of the wafer W to be processed by the first holding portion 270 is stopped. Thereby, the processed wafer W of the bonding surface W _J is held by the white Nuo suction cup 240 when being carried into the joint surface cleaning device 40, and as shown in FIG. 23, the non-joining surface W is held by the white Nuo suction cup 240. The state of _N. That is, the front and back sides of the wafer to be processed held by the white Nucleus chuck 240 are reversed. Thereafter, while maintaining the wafer W to be processed W _N of the non-bonding surface of the Bernoulli chuck 240 from the inverting means 42 is retracted.

When the residue of the adhesive G is not confirmed in the inspection device 7, the wafer W to be processed is not conveyed to the bonding surface cleaning device 40, and the wafer W is reversed by the inverting device 42. The method of inversion is the same as the above method.

Thereafter, the white Nuo suction cup 240 of the third conveyance device 51 is rotated about the horizontal axis while the wafer W to be processed is held, and the wafer W to be processed is reversed in the vertical direction. After that, the wafer W to be processed is transported to the inspection apparatus 7 by the white Nuo suction cup 240 with the non-joining surface W _N facing upward, and the inspection of the non-joining surface W _N is performed (step A6 of FIG. 12). Then, when the non-joining surface W _N confirms the contamination of the fine particles, the third transfer device 51 transports the processed wafer W to the non-joining surface cleaning device 41, and washes the non-joining surface cleaning device 41. Joint surface W _N (step A7 of Fig. 12). In addition, since this step A7 is the same as the above-described step A2, the description thereof will be omitted. Further, for example, when it is confirmed in the inspection device 7 that the residue of the adhesive G is not present, the step A7 may be omitted.

Next, the cleaned wafer W to be processed is transported to the post-processing station 4 by the third transport device 51. When the inspection device 7 does not confirm the residue of the adhesive G, the processed wafer W is transported to the post-processing station 4 without being transported to the non-joining surface cleaning device 41.

Then, the processed wafer W is subjected to a predetermined post-processing in the post-processing station 4 (step A8 of Fig. 12). In this way, the processed wafer W is commercialized.

On the other hand, the defective wafer W to be processed which has been peeled off from the defective wafer T is transported to the carry-in/out station 2 by the first transport device 20 after the joint surface W _{J is} cleaned in steps A2 and A3. After that, the defective wafer W to be processed is carried out from the loading/unloading station 2 to the outside and recovered (step A9 in Fig. 12).

When the above-described steps A2 to A9 are performed on the wafer W to be processed, the support wafer S peeled off by the peeling device 30 is transported to the second cleaning device 33 by the first transport device 20. Then, in the second cleaning apparatus 33, the removal of the joint surface supports the bonding agent on the wafer S _J S, _J S joint surface cleaning (step 12 of FIG. A10). Further, the cleaning of the support wafer S in the step A10 is the same as the removal of the adhesive G on the wafer W to be processed in the above step A2, and therefore the description thereof will be omitted.

Thereafter, the support wafer S of the cleaned joint surface S _J is transported to the carry-in/out station 2 by the first transport device 20 . Thereafter, the support wafer S is carried out, and is carried out from the carry-in/out station 2 to the outside and recovered (step A11 in Fig. 12). In this way, the series of stripping processes of the processed wafer W and the supporting wafer S are completed.

According to the above embodiment, the load detecting element 180 measures the load acting on the wafer W to be processed and the supporting wafer S when the wafer W to be processed is separated from the supporting wafer S. Thereafter, the load measured by the load detecting element 180 is output to the control unit 350, and the control unit 350 controls the rotational speed (or torque) of the driving unit 173 according to the load measured by the load detecting element 180 to act on the processed wafer. The load of W and the supporting wafer S becomes a certain desired load. So can drive Since the portion 173 is fed back, an appropriate load can be applied to the wafer W to be processed and the support wafer S. As a result, damage to the wafer W to be processed and the support wafer S can be suppressed. Further, as the peeling process progresses, the peeling speed can be increased, and the time for peeling off the processed wafer W and the supporting wafer S can be optimized to shorten the time required for the peeling process, and the amount of peeling treatment can be increased. . As described above, according to the present embodiment, the peeling process of the processed wafer W and the support wafer S can be performed appropriately and efficiently.

According to the peeling system 1 of the above embodiment, after the superposed wafer T is peeled off into the processed wafer W and the supporting wafer S in the peeling device 30, the first cleaning device 31 can be washed and peeled off. The wafer W is washed in the second cleaning device 33 to clean the peeled support wafer S. According to this embodiment, the cleaning of the wafer W to be processed and the cleaning of the supporting wafer S can be efficiently performed in the peeling system 1 from the peeling of the wafer W to be processed and the supporting wafer S. A series of stripping treatments up to now. Further, in the first cleaning device 31 and the second cleaning device 33, the cleaning of the processed wafer W and the cleaning of the supporting wafer S can be performed in parallel. Further, when the processed wafer W and the supporting wafer S are peeled off in the peeling device 30, the other processed wafer W and the supporting wafer S are processed in the first cleaning device 31 and the second cleaning device 33. In addition, the peeling of the processed wafer W and the support wafer S can be performed efficiently, and the processing amount of the peeling process can be improved.

Further, in such a series of processes, since the peeling of the processed wafer W and the supporting wafer S to the post-processing of the processed wafer W can be performed, the processing amount of the wafer processing can be further improved.

In the peeling device 30 of the above embodiment, when the load measured by the load detecting element 180 exceeds the allowable load, the driving of the driving unit 173 can be stopped. For example, when an abnormality occurs in the peeling process of the wafer W to be processed and the support wafer S, and the load measured by the load detecting element 180 suddenly increases, the control unit 350 controls the driving unit 173 to stop the driving of the driving unit 173. In this case, it is possible to more reliably prevent the wafer W to be processed and the supporting wafer S from being damaged.

In the above embodiment, the second holding portion 111 can be vertically oriented in the peeling device 30. Although moving in the horizontal direction, the first holding portion 110 can be moved in the vertical direction and the horizontal direction. Alternatively, both the first holding portion 110 and the second holding portion 111 may be moved in the vertical direction and the horizontal direction.

Further, in the above embodiment, the second holding portion 111 is moved in the vertical direction and the horizontal direction in the peeling device 30, but the distance between the element on the wafer W to be processed and the supporting wafer S is extremely large, for example. Alternatively, the second holding portion 111 can be moved only in the horizontal direction. In this case, the contact of the element with the support wafer S can be avoided, and the movement control of the second holding portion 111 can be simplified. Further, the second holding portion 111 may be moved only in the vertical direction to peel off the processed wafer W and the supporting wafer S.

In the peeling device 30 of the above embodiment, a lid (not shown) that covers the processing space between the first holding portion 110 and the second holding portion 111 may be provided. In this case, by heat-treating the wafer W to be processed by the gas atmosphere in which the processing space is an inert gas, formation of an oxide film on the bonding surface W _J of the wafer W to be processed can be suppressed.

Further, in the peeling device 30 of the above embodiment, a perforated plate (not shown) may be provided, and the second holding portion 111 may be followed to be movable in the horizontal direction, and an inert gas may be supplied from the plurality of holes. In this case, when the second holding portion 111 is moved to peel off the superposed wafer T, the second holding portion 111 is traced to move the perforated plate, and the bonding surface W of the processed wafer W exposed by peeling is removed _. Supply inert gas. In this manner, even if the wafer W to be processed is subjected to heat treatment, formation of an oxide film on the bonding surface W _J of the wafer W to be processed can be suppressed.

In the peeling device 30 of the above embodiment, the processed wafer W and the supporting wafer S are peeled off while the wafer W to be processed is placed on the upper side and the supporting wafer S is placed on the lower side. However, it is also possible to make the processed wafer W opposite to the support wafer S above and below.

In the peeling device 30 of the above embodiment, the load detecting element 180 is provided as the load measuring unit for measuring the load of the processed wafer W and the supporting wafer S. However, the load measuring unit is not limited to the load detecting element, and various means can be used. For example, pressure sensors, dial gauges, spring scales, etc. can be used. As a load measuring unit.

As shown in FIG. 24, the peeling device 30 of the above embodiment may further include a main load detecting element 400 as a load correcting unit for performing correction of the load detecting element 180. The main load detecting element 400 has better measurement accuracy of the load than the load detecting element 180. That is, the main load detecting element 400 is corrected, and the load measured by the main load detecting element 400 is the same as the load actually acting. Further, the main load detecting element 400 is provided, for example, in the first holding unit 110.

In this case, the wafer W to be processed for load correction and the support wafer S are peeled off before the wafer W to be processed for the product and the wafer S are supported. Thereafter, the load measured by the load detecting element 180 and the load measured by the main load detecting element 400 are compared, and the load measured by the load detecting element 180 is corrected in accordance with the main load detecting element 400.

According to the present embodiment, since the main load detecting element 400 is used to correct the load detecting element 180, it is possible to more accurately measure the actual use of the load detecting element 180 to peel off the processed wafer W for the product and the supporting wafer S. load. As a result, the feedback control of the driving unit 173 can be performed more appropriately, and the peeling process of the processed wafer W and the supporting wafer S can be performed more appropriately and efficiently. In particular, the peeling process of the processed wafer W and the supporting wafer S by the peeling device 30 is performed in the final stage of the processed wafer W as a product, and it is assumed that if the processed wafer W is damaged, All the processing until it was wasted. Therefore, it is important to measure the appropriate load by the load detecting element 180 and appropriately perform the peeling process of the wafer W to be processed and the supporting wafer S.

Further, in the peeling device 30 of the present embodiment, the main load detecting element 400 is provided as the load correcting unit, but the load correcting unit is not limited to the main load detecting element, and various means can be used. For example, a pressure sensor, a dial gauge, a spring balance, or the like can be used as the load measuring unit.

In the above embodiment, the second fluid nozzle is used in the first cleaning device 31, the second cleaning device 33, the joint cleaning device 40, and the cleaning liquid nozzle 212 of the non-joining surface cleaning device 41, but the cleaning liquid nozzle The form of 212 is not limited to this embodiment, and various nozzles can be used. For example as a cleaning solution As the nozzle 212, a nozzle body that integrates a nozzle that supplies an organic solvent with a nozzle that supplies an inert gas, a spray nozzle, an injection nozzle, an ultrasonic nozzle, or the like can be used. Further, in order to increase the treatment amount of the washing treatment, for example, a washing liquid heated to 80 ° C may be supplied.

In addition, in the first cleaning device 31, the second cleaning device 32, the joint surface cleaning device 40, and the non-joining surface cleaning device 41, IPA (isopropyl alcohol) may be supplied in addition to the cleaning liquid nozzle 21. ) The nozzle. In this case, after the processed wafer W or the supporting wafer S is washed by the cleaning liquid from the cleaning liquid nozzle 212, the cleaning liquid on the processed wafer W or the supporting wafer S is replaced with IPA. In this way, the bonding surfaces W _J and S _{J of the} wafer W to be processed or the supporting wafer S are more reliably washed.

Further, the configuration of the inspection device 7 is not limited to the configuration of the above embodiment. The inspection device 7 can detect the presence or absence of the residue of the adhesive G on the wafer W to be processed and the presence or absence of the oxide film residue if the image of the wafer W to be processed can be imaged.

In the peeling system 1 of the above embodiment, a temperature adjusting device (not shown) that cools the processed wafer W heated by the peeling device 30 to a predetermined temperature may be provided. In this case, since the temperature of the wafer W to be processed is adjusted to an appropriate temperature, subsequent processing can be performed more smoothly.

In the superposed wafer T of the above embodiment, a protective member for suppressing damage of the superposed wafer T, for example, a cutting frame (not shown) may be provided. The cutting frame is disposed on the side of the wafer W to be processed. After that, the processed wafer W is peeled off from the support wafer S, and the thinned processed wafer W is subjected to predetermined processing and transportation while being protected by the cutting frame. Therefore, damage of the wafer W to be processed after peeling can be suppressed.

Next, other embodiments will be described. The same portions as those of the above-described embodiment are not described. As shown in Fig. 25, the peeling device 30 further includes a load detecting element 400 as a second load measuring unit in addition to the above embodiment. The load detecting element 400 is provided between the support plate 160 and the driving unit 161. The upper end of the load detecting element 400 is connected to the bottom surface of the support plate 160; the lower end of the load detecting element 400 is connected to the upper end of the driving portion 161. With the load detecting element 400, the load acting in the Z direction can be measured. The load detecting element 400 measures The load is output to the control unit 350. The control unit 350 controls the rotational speed (or torque) of the drive unit 161 in accordance with the load measured by the load detecting element 400, so that the load acting in the Z direction of the processed wafer W and the supporting wafer S becomes a constant desired load A. In other words, the control unit 350 performs control of the drive unit 161 to make the load in the Z direction a constant load A. Further, the control unit 350 also controls the rotational speed (or torque) of the drive unit 173 in accordance with the load in the X direction measured by the load detecting element 180. That is, the control unit 350 also controls the drive unit 173 to make the load in the X direction a constant desired load B. In this manner, the control unit 350 performs feedback control for each of the drive unit 161 and the drive unit 173. Therefore, for the wafer W to be processed and the support wafer S, the peeling device 30 can perform an appropriate load in the X direction and the Z direction, respectively. As a result, the wafer W to be processed and the supporting wafer S can be peeled off without damage. Further, the position of the load detecting element 400 is not limited to between the support plate 160 and the driving portion 161. The position of the load acting in the Z direction near the center of the wafer W to be processed and the support wafer S can be measured at other positions. Further, when the load measured by the load detecting element 400 exceeds the allowable load, the driving of the driving unit 161 can be stopped. Further, the second load measuring unit is not limited to the load detecting element 400, and various means can be used. For example, a pressure sensor, a dial gauge, a spring balance, or other methods may be used as the second load measuring unit.

In the above embodiment, the case where the processed wafer W is post-processed and processed in the post-processing station 4 will be described. However, the present invention can also be applied to, for example, a crystal to be processed used in a three-dimensional integration technique. Round self-supporting wafer stripping. In addition, in the three-dimensional integration technology, in place of the high density of semiconductor elements in recent years, the plurality of semiconductor elements are stacked in a three-dimensional space instead of arranging the high-density complex semiconductor elements in a horizontal plane. In the three-dimensional integration technique, it is also required to reduce the thickness of the processed wafer to be processed, and to bond the processed wafer to the support wafer to perform a predetermined process.

Heretofore, the best mode for carrying out the invention has been described with reference to the drawings, but the invention is not limited to this example. It is to be understood that those skilled in the art can understand various modifications and examples within the scope of the invention as claimed in the appended claims. The present invention is not limited to this example, and various aspects can be employed. In the present invention, the substrate is a FPD (flat panel display) other than the wafer, and other substrates such as a reticle for the photomask The situation can also apply.

30‧‧‧ peeling device

101‧‧‧Exhaust port

102‧‧‧Exhaust device

103‧‧‧Exhaust pipe

110‧‧‧1st Holding Department

111‧‧‧2nd Maintenance Department

120‧‧‧ Body Department

121‧‧‧Porous materials

122‧‧‧Sucking space

123, 140‧‧ ‧ suction tube

124, 141‧‧‧ heating mechanism

130, 160‧‧‧ Support board

150‧‧‧Mobile agencies

151‧‧‧Lead moving department

152‧‧‧Horizontal Moving Department

161, 173‧‧‧ drive department

162‧‧‧Support components

170‧‧‧ Track

171‧‧‧Support

180‧‧‧Load detection component

350‧‧‧Control Department

G‧‧‧Adhesive

S‧‧‧Support wafer

T‧‧‧ coincident wafer

W‧‧‧Processed Wafer

Claims (14)

A peeling device that joins a substrate to be processed and a support substrate by a bonding agent, and peels the film into a substrate to be processed and a support substrate, and is characterized in that: a first holding portion is provided to hold the substrate to be processed; and a second holding portion is provided Holding the support substrate; and moving the mechanism to move the first holding portion or the second holding portion in a horizontal direction; and the load measuring unit measures the substrate to be processed and the supporting substrate when the substrate to be processed is separated from the supporting substrate And a control unit that controls the moving mechanism based on a load measured by the load measuring unit. The peeling device according to claim 1, wherein the control unit controls the moving mechanism such that a load measured by the load measuring unit is constant. The peeling device according to claim 1 or 2, wherein the control unit controls the moving mechanism to cause the first holding unit or the second holding when the load measured by the load measuring unit exceeds an allowable load The speed of relative movement of the part is reduced. The peeling device of claim 1 or 2, wherein the load measuring unit is a load detecting element. The peeling device according to claim 1 or 2, further comprising a load correcting unit, wherein the load measurement accuracy is better than the load measuring unit, and is used for performing calibration of the load measuring unit. The peeling device of claim 5, wherein the load correcting portion is a load detecting element. A peeling system comprising: a processing apparatus according to claim 1 or 2, comprising: a processing station; the peeling device; and a first cleaning device for cleaning the substrate to be processed which is peeled off by the peeling device, and a second cleaning device that washes the support substrate that is peeled off by the peeling device; carries out the inbound station, carries the processed substrate, the support substrate, or the superposed substrate into and out of the processing station; and transports the device to and from the processing station Transfer the substrate to be processed, the support substrate, or the overlap substrate between the inbounds. A peeling method in which a bonding agent is bonded to a substrate to be processed and a supporting substrate The substrate is peeled off into a substrate to be processed and a support substrate, and the method includes a step of moving the first holding portion holding the substrate to be processed or the second holding portion holding the support substrate in a horizontal direction by the moving mechanism, and peeling off the substrate The substrate and the support substrate are processed; and when the substrate to be processed is separated from the support substrate by the load measuring unit, the load acting on the substrate to be processed and the support substrate is controlled; and the moving mechanism is controlled in accordance with the load measured by the load measuring unit. The peeling method of claim 8, wherein the moving mechanism is controlled such that a load measured by the load measuring unit is constant. The peeling method of claim 8 or 9, wherein when the load measured by the load measuring unit exceeds an allowable load, the moving mechanism is controlled to move the first holding unit or the second holding unit relative to each other. The speed is reduced. The peeling method of claim 8 or 9, wherein the load measuring unit is a load detecting element. The peeling method according to claim 8 or 9, wherein the load measuring unit performs the correction using the load correcting unit having a higher measurement accuracy than the load measuring unit. The peeling method of claim 12, wherein the load correcting unit is a load detecting element. A computer readable memory medium recorded in a computer operating on a control unit of a control stripping device for performing the stripping method of claim 8 or 9 by the stripping device.