TW201341378A - Novel compound, material for organic electroluminescent element and organic electroluminescent element - Google Patents
Novel compound, material for organic electroluminescent element and organic electroluminescent element Download PDFInfo
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Abstract
Description
本發明係關於一種新穎化合物、含有其之有機電激發光元件用材料、及有機電激發光元件。 The present invention relates to a novel compound, a material for an organic electroluminescent device comprising the same, and an organic electroluminescent device.
有機電激發光(EL)元件中有螢光型及磷光型,依據各自之發光機制,針對最佳之元件設計已進行了研究。已知關於磷光型之有機EL元件,根據其發光特性,螢光元件技術之簡單之轉用並無法獲得高性能之元件。可認為其原因通常係如下所述。 Among the organic electroluminescence (EL) elements, there are fluorescent and phosphorescent types, and the optimum component design has been studied in accordance with the respective light-emitting mechanisms. It is known that a phosphorescent organic EL element cannot be obtained as a high-performance element by the simple conversion of the fluorescent element technology according to its light-emitting characteristics. It can be considered that the reason is usually as follows.
首先,發磷光係利用三重態激子之發光,因此發光層中所使用之化合物之能隙必須較大。其原因在於,某一化合物之能隙(以下,亦稱為單重態能量)之值通常大於該化合物之三重態能量(於本發明中,係指最低激發三重態與基底狀態之能量差)之值。 First, the phosphorescent system utilizes the luminescence of triplet excitons, so the energy gap of the compound used in the luminescent layer must be large. The reason is that the value of the energy gap (hereinafter, also referred to as singlet energy) of a certain compound is usually larger than the triplet energy of the compound (in the present invention, the energy difference between the lowest excited triplet state and the substrate state). value.
因此,為了將發磷光性摻雜物材料之三重態能量高效率地封入發光層內,首先,必須將三重態能量大於發磷光性摻雜物材料之三重態能量的主體材料用於發光層中。進而,設置鄰接於發光層之電子傳輸層、及電洞傳輸層,於電子傳輸層、及電洞傳輸層中必須使用三重態能量大於發磷光性摻雜物材料之三重態能量的化合物。 Therefore, in order to efficiently encapsulate the triplet energy of the phosphorescent dopant material into the light-emitting layer, first, a host material having a triplet energy greater than the triplet energy of the phosphorescent dopant material must be used in the light-emitting layer. . Further, an electron transport layer adjacent to the light-emitting layer and a hole transport layer are provided, and a compound having a triplet energy greater than a triplet energy of the phosphorescent dopant material must be used in the electron transport layer and the hole transport layer.
如此,於基於先前之有機EL元件之元件設計思想之情形時,將與螢光型之有機EL元件中所使用之化合物相比具有較大能隙之化合物用於磷光型之有機EL元件中,而使有機EL元件整體之驅動電壓上升。 Thus, in the case of the element design concept of the conventional organic EL element, a compound having a larger energy gap than the compound used in the fluorescent type organic EL element is used for the phosphorescent organic EL element. The driving voltage of the entire organic EL element is increased.
又,螢光元件中較為有用之耐氧化性或耐還原性較高之烴系 化合物由於π電子雲之擴散較廣,故而能隙較小。因此,於磷光型之有機EL元件中,不易選擇此種烴系化合物,而選擇含有氧或氮等雜原子之有機化合物,其結果,磷光型之有機EL元件具有與螢光型之有機EL元件相比,壽命較短之問題。 Moreover, a hydrocarbon system having high oxidation resistance or high reduction resistance which is useful in a fluorescent element Since the compound has a wide diffusion of π electron clouds, the energy gap is small. Therefore, in the phosphorescent organic EL device, it is difficult to select such a hydrocarbon-based compound, and an organic compound containing a hetero atom such as oxygen or nitrogen is selected, and as a result, the phosphorescent organic EL device has a fluorescent organic EL device. Compared to the problem of shorter life.
進而,發磷光性摻雜物材料之三重態激子之激子緩和速度與單重態激子相比非常長,此種情況亦會對元件性能造成較大之影響。即,自單重態激子之發光由於與發光相關之緩和速度較快,故而不易引起激子向發光層之周邊層(例如電洞傳輸層或電子傳輸層)之擴散,而期待高效率之發光。另一方面,自三重態激子之發光為自旋禁止,且緩和速度較慢,因此容易引起激子向周邊層之擴散,而由特定之發磷光性化合物以外引起熱能量去活化。即,電子、及電洞之再結合區域之控制與螢光型之有機EL元件相比較為重要。 Further, the exciton relaxation rate of the triplet excitons of the phosphorescent dopant material is very long compared to the singlet excitons, and this also has a large influence on the device performance. That is, since the light emission from the singlet exciton is faster because of the relaxation speed associated with the light emission, it is less likely to cause the diffusion of excitons to the peripheral layer of the light-emitting layer (for example, the hole transport layer or the electron transport layer), and high-efficiency light is expected. . On the other hand, since the light emission from the triplet excitons is spin-inhibited and the relaxation speed is slow, it is easy to cause the exciton to diffuse to the peripheral layer, and the thermal energy is deactivated by the specific phosphorescent compound. That is, the control of the recombination region of the electrons and the holes is more important than the fluorescent organic EL device.
根據以上原因,於磷光型之有機EL元件之高性能化時,必須選擇與螢光型之有機EL元件不同之材料、及元件設計。 In view of the above, in the high performance of the phosphorescent organic EL device, it is necessary to select a material different from the fluorescent organic EL device and the device design.
尤其是,於藍色發光之磷光型之有機EL元件之情形時,與綠~紅色發光之磷光型之有機EL元件相比,必須於發光層或其周邊層使用三重態能量較大之化合物。具體而言,為了獲得無效率損失之藍色之發磷光,發光層中所使用之主體材料之三重態能量必須大致為3.0 eV以上。 In particular, in the case of a phosphorescent organic EL device which emits blue light, it is necessary to use a compound having a larger triplet energy in the light-emitting layer or its peripheral layer than the green-red-emitting phosphorescent organic EL device. Specifically, in order to obtain blue phosphorescence with no loss of efficiency, the triplet energy of the host material used in the light-emitting layer must be approximately 3.0 eV or more.
於此種狀況下,於專利文獻1及2中揭示有組合咔唑骨架及口井環而成之有機EL元件之材料。 In such a case, Patent Documents 1 and 2 disclose materials of an organic EL device in which a carbazole skeleton and a well ring are combined.
專利文獻1:國際公開第2003-078541號小冊 Patent Document 1: International Publication No. 2003-078541
專利文獻2:國際公開第2011-019156號小冊 Patent Document 2: International Publication No. 2011-019156
為了獲得具有較高之三重態能量,並且滿足作為有機EL材料 所要求之其他性能的化合物,需要的並非簡單地組合雜環化合物等三重態能量較高之分子部分,而是利用考慮到π電子之電子狀態之新穎思想來進行分子設計。 In order to obtain a higher triplet energy, and to satisfy as an organic EL material The compounds of other properties required do not simply combine the molecular moieties with higher triplet energy such as heterocyclic compounds, but use molecular ideas that take into account the electronic states of π electrons.
本發明之目的在於提供一種可提高有機電激發光元件之發光效率之新穎化合物、含有該化合物之有機電激發光元件用材料、及使用有該有機電激發光元件用材料之有機電激發光元件。 An object of the present invention is to provide a novel compound which can improve the luminous efficiency of an organic electroluminescence device, a material for an organic electroluminescence device containing the compound, and an organic electroluminescence device using the material for the organic electroluminescence device. .
根據本發明,提供以下之化合物等。 According to the present invention, the following compounds and the like are provided.
1.一種化合物,其係以下述式(A)表示:
(於式(A)中,Y1~Y5分別獨立地表示CR1、氮原子、或與Cz鍵結之碳原子,Y1~Y5中之至少一者為氮原子;於R1存在複數個之情形時,複數個R1相互可相同亦可不同;m為1~3之整數,於m為2以上之情形時,複數個Cz相互可相同亦可不同;Y11~Y14分別獨立地為CR2、氮原子、或與A鍵結之碳原子,Y15~Y18分別獨立地為CR2或氮原子;於R2存在複數個之情形時,複數個R2相互可相同亦可不同;Y21~Y24分別獨立地為CR3、氮原子、或與A鍵結之碳原子,Y25~Y28分別獨立地為CR3或氮原子;於R3存在複數個之情形時,複數個R3相互可相同亦可不同;
R1~R3分別獨立地為氫原子、經取代或未經取代之碳數1~20的烷基、經取代或未經取代之成環碳數3~20的環烷基、經取代或未經取代之碳數1~20的烷氧基、經取代或未經取代之成環碳數3~20的環烷氧基、經取代或未經取代之成環碳數6~18的芳香族烴環基、經取代或未經取代之成環碳數6~18的芳氧基、經取代或未經取代之成環原子數5~18的芳香族雜環基、經取代或未經取代的胺基、經取代或未經取代的矽基、氟基、或者氰基;Ar為經取代或未經取代之成環碳數6~18的芳香族烴環基、或者經取代或未經取代之成環原子數5~18的芳香族雜環基;A為單鍵、經取代或未經取代之碳數1~20的伸烷基、經取代或未經取代之成環碳數6~18的芳香族烴環基、或者經取代或未經取代之成環原子數5~18的芳香族雜環基;其中,於A為單鍵之情形時,Y11~Y14中之任一者與Y21~Y24中之任一者直接鍵結;Cz為下述式(1)~(5)中之任一者所表示之含氮多環基;
(於式(1)~(5)中,X1~X8分別獨立地為CRa或氮原子, Z為單鍵、氧原子、硫原子、-S(=O)-、-S(=O)2-、-Si(RcRd)-、-C(ReRf)-、或-N(Rg)-,Ra~Rg分別獨立地為與R1相同之基,於Ra存在複數個之情形時,複數個Ra相互可相同亦可不同;Cz於*所示之位置與含有Y1~Y5之含氮六員環鍵結))。 (In the formulae (1) to (5), X 1 to X 8 are each independently CR a or a nitrogen atom, and Z is a single bond, an oxygen atom, a sulfur atom, -S(=O)-, -S (= O) 2 -, -Si(R c R d )-, -C(R e R f )-, or -N(R g )-, R a ~R g are each independently the same group as R 1 , when the presence of a plurality of in case of R a, plural R a may be identical or different from each other; the position shown in Cz * nitrogen-containing Y 1 ~ Y 5 of the six-membered rings bonded)).
2.如1之化合物,其中,Y2及Y4之至少一者為氮原子。 2. The compound according to 1, wherein at least one of Y 2 and Y 4 is a nitrogen atom.
3.如1之化合物,其中,Y1及Y5之至少一者為氮原子。 3. The compound according to 1, wherein at least one of Y 1 and Y 5 is a nitrogen atom.
4.如1至3中任一項之化合物,其中,Y1~Y5中僅有任一個為氮原子。 4. The compound according to any one of 1 to 3, wherein any one of Y 1 to Y 5 is a nitrogen atom.
5.如1至4中任一項之化合物,其中,Z為單鍵。 5. The compound according to any one of 1 to 4, wherein Z is a single bond.
6.如1至5中任一項之化合物,其中,Cz為上述式(1)表示之含氮多環基。 6. The compound according to any one of 1 to 5, wherein Cz is a nitrogen-containing polycyclic group represented by the above formula (1).
7.如1至5中任一項之化合物,其中,Cz為上述式(4)表示之含氮多環基。 7. The compound according to any one of 1 to 5, wherein Cz is a nitrogen-containing polycyclic group represented by the above formula (4).
8.如1至7中任一項之化合物,其中,A為單鍵。 8. The compound according to any one of 1 to 7, wherein A is a single bond.
9.如1至8中任一項之化合物,其中,Y2或Y4為與Cz鍵結之碳原子。 The compound according to any one of 1 to 8, wherein Y 2 or Y 4 is a carbon atom bonded to Cz.
10.一種有機電激發光元件用材料,其含有如1至9中任一項之化合物。 A material for an organic electroluminescent device, which comprises the compound according to any one of 1 to 9.
11.一種有機電激發光元件,其於陰極與陽極之間具有包含發光層之一層以上的有機薄膜層,且上述有機薄膜層中之至少一層含有如10之有機電激發光元件用材料。 An organic electroluminescence device comprising an organic thin film layer containing one or more layers of a light-emitting layer between a cathode and an anode, and at least one of the organic thin film layers containing a material for an organic electroluminescence element such as 10.
12.如11之有機電激發光元件,其中,上述發光層含有上述有機電激發光元件用材料。 12. The organic electroluminescence device according to 11, wherein the light-emitting layer contains the material for the organic electroluminescence device.
13.如11或12之有機電激發光元件,其中,上述發光層含有發磷光材料。 13. The organic electroluminescent device according to 11 or 12, wherein the luminescent layer comprises a phosphorescent material.
14.如13之有機電激發光元件,其中,上述發磷光材料為選自銥(Ir)、鋨(Os)、鉑(Pt)中之金屬原子的鄰位金屬化錯合物。 14. The organic electroluminescent device according to 13, wherein the phosphorescent material is an orthometalated complex of a metal atom selected from the group consisting of iridium (Ir), osmium (Os), and platinum (Pt).
15.如11至14中任一項之有機電激發光元件,其於上述陰極與上述發光層之間具有有機薄膜層,且上述有機薄膜層含有上述有機電激發光元件用材料。 The organic electroluminescent device according to any one of the items 11 to 14, wherein the organic thin film layer is provided between the cathode and the light-emitting layer, and the organic thin film layer contains the material for the organic electroluminescent device.
16.如15之有機電激發光元件,其中,上述有機薄膜層為電子傳輸層。 16. The organic electroluminescent device of 15, wherein the organic thin film layer is an electron transport layer.
17.如11至16中任一項之有機電激發光元件,其於上述陽極與上述發光層之間具有有機薄膜層,且上述有機薄膜層含有上述有機電激發光元件用材料。 The organic electroluminescence device according to any one of the items 11 to 16, wherein the organic thin film layer is provided between the anode and the light-emitting layer, and the organic thin film layer contains the material for the organic electroluminescence element.
根據本發明,可提供一種可提高有機電激發光元件之發光效率之新穎化合物、含有該化合物之有機電激發光元件用材料、及使用有該有機電激發光元件用材料之有機電激發光元件。 According to the present invention, there is provided a novel compound which can improve the luminous efficiency of an organic electroluminescence device, a material for an organic electroluminescence device containing the compound, and an organic electroluminescence device using the material for the organic electroluminescence device. .
1、2‧‧‧有機EL元件 1, 2‧‧‧Organic EL components
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧陽極 20‧‧‧Anode
30‧‧‧電洞傳輸區 30‧‧‧ hole transmission area
40‧‧‧發磷光層 40‧‧‧phosphorescence layer
42‧‧‧間隔層 42‧‧‧ spacer
44‧‧‧發螢光層 44‧‧‧Fluorescent layer
50‧‧‧電子傳輸區 50‧‧‧Electronic transmission area
60‧‧‧陰極 60‧‧‧ cathode
圖1係表示本發明之有機EL元件之一實施形態的圖。 Fig. 1 is a view showing an embodiment of an organic EL device of the present invention.
圖2係表示本發明之有機EL元件之另一實施形態的圖。 Fig. 2 is a view showing another embodiment of the organic EL device of the present invention.
圖3係表示以合成例1合成之化合物A之HOMO、LUMO之電子雲分布的圖。 Fig. 3 is a view showing an electron cloud distribution of HOMO and LUMO of Compound A synthesized in Synthesis Example 1.
圖4係表示以合成例2合成之化合物B之HOMO、LUMO之電子雲分布的圖。 Fig. 4 is a view showing an electron cloud distribution of HOMO and LUMO of Compound B synthesized in Synthesis Example 2.
圖5係表示化合物H-1之HOMO、LUMO之電子雲分布的圖。 Fig. 5 is a view showing an electron cloud distribution of HOMO and LUMO of the compound H-1.
本發明之化合物係以下述式(A)表示。 The compound of the present invention is represented by the following formula (A).
於式(A)中,Y1~Y5分別獨立地表示CR1、氮原子、或與Cz鍵結之碳原子,Y1~Y5中之至少一者為氮原子。於R1存在複數個之情形時,複數個R1相互可相同亦可不同。m為1~3之整數,於m為2以上之情形時,複數個Cz相互可相同亦可不同。 In the formula (A), Y 1 to Y 5 each independently represent a CR 1 , a nitrogen atom, or a carbon atom bonded to Cz, and at least one of Y 1 to Y 5 is a nitrogen atom. When R in the presence of a plurality of case 1, a plurality of R 1 may be identical or different from each other. m is an integer of 1 to 3. When m is 2 or more, a plurality of Cz may be the same or different from each other.
較佳為Y2及Y4之至少一者為氮原子。又,亦較佳為Y1及Y5之至少一者為氮原子。 Preferably, at least one of Y 2 and Y 4 is a nitrogen atom. Further, it is also preferred that at least one of Y 1 and Y 5 is a nitrogen atom.
又,較佳為Y1~Y5中僅有任一個為氮原子,且含有Y1~Y5之含氮六員環為吡啶環。 Further, it is preferred that only one of Y 1 to Y 5 is a nitrogen atom, and the nitrogen-containing six-membered ring containing Y 1 to Y 5 is a pyridine ring.
Y11~Y14分別獨立地為CR2、氮原子、或與A鍵結之碳原子,Y15~Y18分別獨立地為CR2或氮原子。於R2存在複數個之情形時,複數個R2相互可相同亦可不同。 Y 11 to Y 14 are each independently a CR 2 , a nitrogen atom, or a carbon atom bonded to A, and Y 15 to Y 18 are each independently a CR 2 or a nitrogen atom. When R in the presence of a plurality of case 2, a plurality of R 2 may be identical or different from each other.
Y21~Y24分別獨立地為CR3、氮原子、或與A鍵結之碳原子,Y25~Y28分別獨立地為CR3或氮原子。於R3存在複數個之情形時,複數個R3相互可相同亦可不同。 Y 21 to Y 24 are each independently a CR 3 , a nitrogen atom, or a carbon atom bonded to A, and Y 25 to Y 28 are each independently a CR 3 or a nitrogen atom. When R in the presence of a plurality of case 3, plural R 3 may be identical or different from each other.
R1~R3分別獨立地為氫原子、經取代或未經取代之碳數1~20的烷基、經取代或未經取代之成環碳數3~20的環烷基、經取代或未經取代之碳數1~20的烷氧基、經取代或未經取代之成環碳數3~20的環烷氧基、經取代或未經取代之成環碳數6~18的芳香族烴環基、經取代或未經取代之成環碳數6~18的芳氧基、經取代或未經取代之成環原子數5~18 的芳香族雜環基、經取代或未經取代的胺基、經取代或未經取代的矽基、氟基、或者氰基。 R 1 to R 3 are each independently a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, substituted or Unsubstituted alkoxy group having 1 to 20 carbon atoms, substituted or unsubstituted cycloalkyloxy group having 3 to 20 ring carbon atoms, substituted or unsubstituted aromatic ring having 6 to 18 carbon atoms a hydrocarbon group, a substituted or unsubstituted aryloxy group having 6 to 18 carbon atoms, a substituted or unsubstituted aromatic heterocyclic group having 5 to 18 ring atoms, substituted or unsubstituted Substituted amine, substituted or unsubstituted fluorenyl, fluoro, or cyano.
Ar為經取代或未經取代之成環碳數6~18的芳香族烴環基、或者經取代或未經取代之成環原子數5~18的芳香族雜環基。 Ar is a substituted or unsubstituted aromatic hydrocarbon ring group having 6 to 18 carbon atoms or a substituted or unsubstituted aromatic heterocyclic group having 5 to 18 ring atoms.
A為單鍵、經取代或未經取代之碳數1~20的伸烷基、經取代或未經取代之成環碳數6~18的芳香族烴環基、或者經取代或未經取代之成環原子數5~18的芳香族雜環基。 A is a single bond, a substituted or unsubstituted alkylene group having 1 to 20 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon ring group having 6 to 18 carbon atoms, or a substituted or unsubstituted The aromatic heterocyclic group having a ring number of 5 to 18 atoms.
A較佳為單鍵。再者,於A為單鍵之情形時,Y11~Y14中之任一者與Y21~Y24中之任一者直接鍵結。 A is preferably a single bond. Furthermore, in the case where A is a single bond, any of Y 11 to Y 14 is directly bonded to any of Y 21 to Y 24 .
Cz為下述式(1)~(5)中之任一者所表示之含氮多環基,較佳為下述式(1)或(4)表示之含氮多環基。 Cz is a nitrogen-containing polycyclic group represented by any one of the following formulas (1) to (5), and preferably a nitrogen-containing polycyclic group represented by the following formula (1) or (4).
Cz較佳為與Y2或Y4鍵結。藉由Cz與Y2或Y4鍵結,本發明之化合物具有更高之T1(三重態能階)。 Cz is preferably bonded to Y 2 or Y 4 . The compound of the present invention has a higher T1 (triplet energy level) by bonding Cz to Y 2 or Y 4 .
於式(1)~(5)中,X1~X8分別獨立地為CRa或氮原子。 In the formulae (1) to (5), X 1 to X 8 are each independently CR a or a nitrogen atom.
Z為單鍵、氧原子、硫原子、-S(=O)-、-S(=O)2-、-Si(RcRd)-、-C(ReRf)-、或-N(Rg)-,較佳為單鍵。 Z is a single bond, an oxygen atom, a sulfur atom, -S(=O)-, -S(=O) 2 -, -Si(R c R d )-, -C(R e R f )-, or - N(R g )-, preferably a single bond.
Ra~Rg分別獨立地為與R1相同之基,於Ra存在複數個之情形時,複數 個Ra相互可相同亦可不同。 R a ~ R g are each independently the same as R is of group 1, in the presence of a plurality of R a case, a plurality of R a may be identical or different from each other.
Cz於*所示之位置與含有Y1~Y5之含氮六員環鍵結。 Cz is bonded to the nitrogen-containing six-membered ring containing Y 1 to Y 5 at the position indicated by *.
本發明之化合物於電子注入性優異之含有Y1~Y5之含氮六員環上鍵結有兩個咔唑環等縮合含氮雜環,因此具有適於發藍磷光之較高之三重態能量。含氮六員環之取代基並非為上述式(1)~(5)中之任一者所表示之含氮多環基即縮合含氮雜環基,例如若為苯基等烴芳香族環基,則為了使共軛系擴散至烴芳香族環基,有T1變小,三重態能量之封入變得不充分之虞。 The compound of the present invention has a condensed nitrogen-containing heterocyclic ring such as two carbazole rings bonded to a nitrogen-containing six-membered ring containing Y 1 to Y 5 excellent in electron injectability, and thus has a higher triple weight suitable for blue phosphorescence. State energy. The substituent of the nitrogen-containing six-membered ring is not a nitrogen-containing polycyclic group represented by any one of the above formulas (1) to (5), that is, a condensed nitrogen-containing heterocyclic group, for example, a hydrocarbon aromatic ring such as a phenyl group. In order to diffuse the conjugated system to the hydrocarbon aromatic ring group, T1 becomes small, and the triplet energy encapsulation becomes insufficient.
本發明之化合物於含有Y1~Y5之含氮六員環上鍵結有兩個咔唑環等縮合含氮雜環,因此以含氮六員環切斷π共軛系,故而可防止π共軛系過度擴散,而具有較高之三重態能量。 The compound of the present invention has a condensed nitrogen-containing heterocyclic ring such as two carbazole rings bonded to a nitrogen-containing six-membered ring containing Y 1 to Y 5 , so that the π-conjugated system is cut by a nitrogen-containing six-membered ring, thereby preventing The π-conjugated system is excessively diffused and has a higher triplet energy.
又,本發明之化合物係於鍵結於含有Y1~Y5之含氮六員環之一縮合含氮雜環上,進而經由A鍵或直接鍵結(連結)咔唑環等縮合含氮雜環。因此,於兩個縮合含氮雜環及A上HOMO(最高佔用分子軌域)之電子雲擴散,HOMO之分布較廣。進而,LUMO(最低未佔用分子軌域)定域於含有Y1~Y5之含氮六員環上。因此,HOMO與LUMO分離,故而電荷注入性之平衡性優異。 Further, the compound of the present invention is bonded to a condensed nitrogen-containing heterocyclic ring which is one of nitrogen-containing six-membered rings containing Y 1 to Y 5 , and further condensed nitrogen-containing via an A bond or a direct bond (link) carbazole ring or the like. Heterocyclic. Therefore, the distribution of HOMO in two condensation nitrogen-containing heterocycles and HOMO (the highest occupied molecular orbital) on A is widely distributed. Further, LUMO (the lowest unoccupied molecular orbital domain) is localized on the nitrogen-containing six-membered ring containing Y 1 to Y 5 . Therefore, since HOMO is separated from LUMO, the balance of charge injection properties is excellent.
因此,藉由將本發明之化合物含有於有機EL元件之發光層中,可提高發光層內之電荷平衡性。若HOMO與LUMO之重合度較大,則電荷之注入性變差,故而有導致元件之高電壓化之虞。 Therefore, by including the compound of the present invention in the light-emitting layer of the organic EL device, the charge balance in the light-emitting layer can be improved. When the degree of coincidence between HOMO and LUMO is large, the charge injection property is deteriorated, and thus the voltage of the element is increased.
藉由使用電荷注入性之平衡性優異之本發明之化合物,可實現有機EL元件之低電壓化、高效率化。 By using the compound of the present invention having excellent balance of charge injection properties, it is possible to reduce the voltage and increase the efficiency of the organic EL device.
以下,針對上述式(A)之各基之例進行說明。 Hereinafter, an example of each of the above formula (A) will be described.
作為碳數1~20(較佳為碳數1~10,更佳為碳數1~6)之烷基,有直鏈狀或分支狀之烷基,具體而言,可列舉:甲基、乙基、丙基、異丙基、 正丁基、異丁基、二級丁基、三級丁基、正戊基、正己基、正庚基、正辛基等,可較佳地列舉甲基、乙基、丙基、異丙基、正丁基、異丁基、二級丁基、三級丁基,更佳為甲基、乙基、丙基、異丙基、正丁基、二級丁基、三級丁基。 The alkyl group having a carbon number of 1 to 20 (preferably, a carbon number of 1 to 10, more preferably a carbon number of 1 to 6) has a linear or branched alkyl group, and specific examples thereof include a methyl group. Ethyl, propyl, isopropyl, N-butyl, isobutyl, secondary butyl, tert-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, etc., preferably exemplified by methyl, ethyl, propyl, isopropyl Base, n-butyl, isobutyl, secondary butyl, tert-butyl, more preferably methyl, ethyl, propyl, isopropyl, n-butyl, secondary butyl, tert-butyl.
作為碳數1~20之伸烷基,可列舉上述烷基之2價基。 Examples of the alkylene group having 1 to 20 carbon atoms include the divalent group of the above alkyl group.
作為成環碳數3~20之環烷基,可列舉:環丙基、環丁基、環戊基、環己基、1-金剛烷基、2-金剛烷基、1-降莰基、2-降莰基等,較佳為環戊基、環己基。 Examples of the cycloalkyl group having 3 to 20 ring carbon atoms include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a 1-adamantyl group, a 2-adamantyl group, a 1-norbornyl group, and 2 - a thiol group or the like, preferably a cyclopentyl group or a cyclohexyl group.
碳數1~20之烷氧基表示為-OYa,可列舉上述烷基之例作為Ya之例。烷氧基例如為甲氧基、乙氧基。烷氧基可經氟原子取代,於該情形時,較佳為三氟甲氧基等。 The alkoxy group having 1 to 20 carbon atoms is represented by -OY a , and examples of the above alkyl group are exemplified as Y a . The alkoxy group is, for example, a methoxy group or an ethoxy group. The alkoxy group may be substituted by a fluorine atom, and in this case, a trifluoromethoxy group or the like is preferable.
成環碳數3~20之環烷氧基表示為-OYb,可列舉上述環烷基之例作為Yb之例。環烷氧基例如為環戊氧基、環己氧基。 The cycloalkyloxy group having 3 to 20 ring carbon atoms is represented by -OY b , and examples of the above cycloalkyl group are exemplified as Y b . The cycloalkoxy group is, for example, a cyclopentyloxy group or a cyclohexyloxy group.
成環碳數6~18之芳香族烴環基較佳為成環碳數6~12之芳香族烴環基。 The aromatic hydrocarbon ring group having 6 to 18 ring carbon atoms is preferably an aromatic hydrocarbon ring group having 6 to 12 ring carbon atoms.
再者,所謂「成環碳」意指構成飽和環、不飽和環、或芳香環之碳原子。 Further, the term "ring-forming carbon" means a carbon atom constituting a saturated ring, an unsaturated ring, or an aromatic ring.
作為1價之芳香族烴環基之具體例,可列舉:苯基、萘基、蒽基、菲基、稠四苯基、芘基、基(chrysenyl)、苯并[c]菲基、苯并[g]基、聯伸三苯基(triphenylenyl)、茀基、苯并茀基、二苯并茀基、聯苯基、聯三苯基、聯四苯基、丙二烯合茀基等,較佳為苯基、聯苯基、聯三苯基、甲苯基、二甲苯基、萘基。 Specific examples of the monovalent aromatic hydrocarbon ring group include a phenyl group, a naphthyl group, an anthracenyl group, a phenanthryl group, a condensed tetraphenyl group, and a fluorenyl group. Chrysenyl, benzo[c]phenanthryl, benzo[g] a phenyl group, a triphenylenyl group, a fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a biphenyl group, a triphenylene group, a tetraphenylene group, a propadienyl fluorenyl group, etc., preferably a benzene group. Base, biphenyl, terphenyl, tolyl, xylyl, naphthyl.
作為2價之芳香族烴環基之具體例,可列舉上述基之2價基。 Specific examples of the divalent aromatic hydrocarbon ring group include a valent group of the above group.
成環碳數6~18之芳氧基表示為-OYc,可列舉上述芳香族烴環之例作為Yc之例。芳氧基例如為苯氧基。 The aryloxy group having 6 to 18 ring carbon atoms is represented by -OY c , and examples of the above aromatic hydrocarbon ring are exemplified as Y c . The aryloxy group is, for example, a phenoxy group.
成環原子數5~18之芳香族雜環基較佳為成環原子數5~10之芳香族雜環基。 The aromatic heterocyclic group having 5 to 18 ring atoms is preferably an aromatic heterocyclic group having 5 to 10 ring atoms.
作為1價之芳香族雜環基之具體例,可列舉:吡咯基、吡基、吡啶基、嘧啶基、三基、吲哚基、異吲哚基、咪唑基、呋喃基、苯并呋喃基、異苯并呋喃基、二苯并呋喃基、二苯并噻吩基、氮雜二苯并呋喃基、氮雜二苯并噻吩基、二氮雜二苯并呋喃基、二氮雜二苯并噻吩基、喹啉基、異喹啉基、喹啉基、咔唑基、啡啶基、吖啶基、啡啉基、啡基、啡噻 基、啡基、唑基、二唑基、呋吖基、噻吩基、苯并噻吩基、二氫吖啶基、氮雜咔唑基、二氮雜咔唑基、喹唑啉基等,較佳為吡啶基、嘧啶基、三基、二苯并呋喃基、二苯并噻吩基、氮雜二苯并呋喃基、氮雜二苯并噻吩基、二氮雜二苯并呋喃基、二氮雜二苯并噻吩基、咔唑基、氮雜咔唑基、二氮雜咔唑基。 Specific examples of the monovalent aromatic heterocyclic group include pyrrolyl group and pyridyl group. Base, pyridyl, pyrimidinyl, tri Base, sulfhydryl, isodecyl, imidazolyl, furyl, benzofuranyl, isobenzofuranyl, dibenzofuranyl, dibenzothiophenyl, azadibenzofuranyl, aza Dibenzothiophenyl, diazadibenzofuranyl, diazadibenzothiophenyl, quinolyl, isoquinolinyl, quin Orolinyl, oxazolyl, phenazinyl, acridinyl, morpholinyl, brown Thiophene Base base, Azolyl, A oxazolyl, a furazolyl group, a thienyl group, a benzothienyl group, a dihydroacridinyl group, an azacarbazolyl group, a diazacarbazolyl group, a quinazolinyl group, etc., preferably a pyridyl group or a pyrimidinyl group. three Base, dibenzofuranyl, dibenzothiophenyl, azadibenzofuranyl, azadibenzothiophenyl, diazadibenzofuranyl, diazadibenzothiophenyl, carbazole Base, azacarbazolyl, diazacarbazolyl.
作為2價之芳香族雜環基,可列舉上述基之2價基。 The divalent aromatic heterocyclic group may, for example, be a divalent group of the above group.
作為經取代或未經取代的胺基,可列舉:胺基、碳數1~10(較佳為碳數1~6)之烷基胺基或二烷基胺基、碳數6~30(較佳為碳數6~20,更佳為碳數6~10)之芳基胺基或二芳基胺基等。 Examples of the substituted or unsubstituted amino group include an amine group, an alkylamino group or a dialkylamino group having 1 to 10 carbon atoms (preferably having 1 to 6 carbon atoms), and a carbon number of 6 to 30 ( The arylamino group or the diarylamino group having a carbon number of 6 to 20, more preferably 6 to 10 carbon atoms, is preferable.
作為經取代或未經取代的矽基,可列舉:矽基、碳數1~10(較佳為碳數1~6)之烷基矽基、碳數6~30(較佳為碳數6~20,更佳為碳數6~10)之芳基矽基等。 Examples of the substituted or unsubstituted fluorenyl group include a fluorenyl group, an alkyl group having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms), and a carbon number of 6 to 30 (preferably a carbon number of 6). ~20, more preferably an aryl fluorenyl group having 6 to 10 carbon atoms.
作為烷基矽基之具體例,可列舉:三甲基矽基、三乙基矽基、三級丁基二甲基矽基、乙烯基二甲基矽基、丙基二甲基矽基等。 Specific examples of the alkyl fluorenyl group include a trimethyl fluorenyl group, a triethyl fluorenyl group, a tertiary dimethyl dimethyl fluorenyl group, a vinyl dimethyl fluorenyl group, a propyl dimethyl fluorenyl group, and the like. .
作為芳基矽基之具體例,可列舉:三苯基矽基、苯基二甲基矽基、三級丁基二苯基矽基、三甲苯基矽基、三(二甲苯基)矽基、三萘基矽基等。 Specific examples of the arylsulfonyl group include a triphenylsulfonyl group, a phenyldimethylhydrazine group, a tertiary butyldiphenylfluorenyl group, a trimethylphenylindenyl group, and a tris(dimethylphenyl)fluorenyl group. , trinaphthyl fluorenyl and the like.
作為上述各基之「經取代或未經取代之…」之取代基,可列舉:上述烷基、經取代或未經取代的胺基、經取代或未經取代的矽基、芳 香族烴環基、環烷基、芳香族雜環基、烷氧基、或其他鹵素原子(可列舉:氟、氯、溴、碘等,較佳為氟原子)、氟烷基、羥基、硝基、氰基、羧基、芳氧基等。 Examples of the substituent of the "substituted or unsubstituted ..." of the above respective groups include the above alkyl group, substituted or unsubstituted amino group, substituted or unsubstituted fluorenyl group, and aromatic group. An aromatic hydrocarbon ring group, a cycloalkyl group, an aromatic heterocyclic group, an alkoxy group, or another halogen atom (for example, fluorine, chlorine, bromine, iodine, etc., preferably a fluorine atom), a fluoroalkyl group, a hydroxyl group, Nitro, cyano, carboxyl, aryloxy and the like.
又,本發明之化合物中之氫原子中,包含中子數不同之同位素,即氕(protium)、氘(deuterium)、氚(tritium)。 Further, among the hydrogen atoms in the compound of the present invention, isotopes having different numbers of neutrons, that is, protium, deuterium, and tritium, are contained.
將上述式(A)表示之化合物之具體例表示如下。 Specific examples of the compound represented by the above formula (A) are shown below.
本發明之化合物之製造方法並無特別限定,只要利用公知之方法製造即可,例如,可使用Tetrahedron 1435~1456頁(1984年)中所記載之銅觸媒,或者J.Am.Chem.Soc.7727~7729頁(2001年)中所記載之鈀觸媒使咔唑衍生物與鹵化芳香族化合物進行反應,藉此製造。又,亦可依據國際公開第2003-078541號小冊中所記載之條件、國際公開第2011- 132684號小冊中所記載之條件製造。 The method for producing the compound of the present invention is not particularly limited, and it may be produced by a known method. For example, a copper catalyst described in Tetrahedron No. 1435 to 1456 (1984) or J. Am. Chem. Soc can be used. The palladium catalyst described in pages 7727 to 7729 (2001) is produced by reacting a carbazole derivative with a halogenated aromatic compound. Also, according to the conditions described in the International Publication No. 2003-078541, International Publication No. 2011- Manufactured under the conditions described in Booklet No. 132684.
本發明之化合物可較佳地用作有機電激發光元件用材料。 The compound of the present invention can be preferably used as a material for an organic electroluminescent device.
本發明之有機電激發光元件用材料含有本發明之化合物。 The material for an organic electroluminescent device of the present invention contains the compound of the present invention.
本發明之有機電激發光元件用材料可僅含有本發明之化合物,亦可含有除本發明之化合物以外的其他材料。 The material for an organic electroluminescent device of the present invention may contain only the compound of the present invention, and may contain other materials than the compound of the present invention.
繼而,針對本發明之有機EL元件進行說明。 Next, the organic EL device of the present invention will be described.
本發明之有機EL元件於陽極與陰極之間具有包含發光層之一層以上的有機薄膜層。並且,有機薄膜層之至少一層含有本發明之有機EL元件用材料。 The organic EL device of the present invention has an organic thin film layer containing one or more layers of the light-emitting layer between the anode and the cathode. Further, at least one layer of the organic thin film layer contains the material for an organic EL device of the present invention.
圖1係表示本發明之有機EL元件之一實施形態之層構成的概略圖。 Fig. 1 is a schematic view showing a layer configuration of an embodiment of an organic EL device of the present invention.
有機EL元件1具有於基板10上依序積層有陽極20、電洞傳輸區30、發磷光層40、電子傳輸區50及陰極60之構成。電洞傳輸區30意指電洞傳輸層及/或電洞注入層等。同樣,電子傳輸區50意指電子傳輸層及/或電子注入層等。亦可不形成該等,較佳為形成一層以上。 The organic EL element 1 has a structure in which an anode 20, a hole transporting region 30, a phosphorescent layer 40, an electron transporting region 50, and a cathode 60 are sequentially laminated on a substrate 10. The hole transfer region 30 means a hole transport layer and/or a hole injection layer or the like. Also, the electron transporting region 50 means an electron transporting layer and/or an electron injecting layer or the like. It is also possible not to form such a layer, and it is preferred to form one or more layers.
於該元件1中,有機薄膜層係設置於電洞傳輸區30上之各有機層、發磷光層40及設置於電子傳輸區50上之各有機層。於該等有機薄膜層之中,至少一層含有本發明之有機EL元件用材料。藉此,可使有機EL元件為高效率。又,可提供低電壓驅動之有機EL元件。 In the element 1, the organic thin film layer is provided on each of the organic layers on the hole transporting region 30, the phosphorescent layer 40, and the respective organic layers disposed on the electron transporting region 50. At least one of the organic thin film layers contains the material for an organic EL device of the present invention. Thereby, the organic EL element can be made highly efficient. Further, an organic EL element driven by a low voltage can be provided.
再者,該材料相對於含有本發明之有機EL元件用材料之有機薄膜層的含量較佳為1~100質量%。 Further, the content of the material relative to the organic thin film layer containing the material for an organic EL device of the present invention is preferably from 1 to 100% by mass.
本發明之有機EL元件較佳為發磷光層40含有本發明之有機EL元件用材料,尤佳為用作發光層之主體材料。 In the organic EL device of the present invention, the phosphorescent layer 40 preferably contains the material for an organic EL device of the present invention, and is preferably used as a host material for the light-emitting layer.
本發明之有機EL元件用材料之三重態能量足夠大,因此即便使用藍色之發磷光性摻雜物材料,亦可將發磷光性摻雜物材料之三重態能量高效率 地封入發光層內。再者,不僅可用於藍色發光層,亦可用於更長波長之光(綠~紅色等)之發光層。 The triplet energy of the material for an organic EL device of the present invention is sufficiently large, so that the triplet energy of the phosphorescent dopant material can be efficiently used even if a blue phosphorescent dopant material is used. The ground is enclosed in the luminescent layer. Furthermore, it can be used not only for the blue light-emitting layer but also for the light-emitting layer of longer wavelength light (green to red, etc.).
又,本發明之有機EL元件用材料之電荷注入平衡性優異,因此可實現有機EL元件之高效率化、低電壓驅動化。進而,又,本發明之有機EL元件用材料藉由電荷平衡性之提高,亦可發揮使有機EL元件長壽命化之效果。 Moreover, since the material for an organic EL device of the present invention is excellent in charge injection balance, it is possible to achieve high efficiency and low voltage drive of the organic EL device. Further, the material for an organic EL device of the present invention has an effect of increasing the life of the organic EL device by improving the charge balance.
發磷光層含有發磷光性材料(磷光摻雜物)。作為磷光摻雜物,可列舉金屬錯合物,較佳為具有選自Ir、Pt、Os、Au、Cu、Re及Ru中之金屬原子與配位基之化合物。配位基較佳為具有鄰位金屬鍵。 The phosphorescent layer contains a phosphorescent material (phosphorescent dopant). As the phosphorescent dopant, a metal complex is exemplified, and a compound having a metal atom and a ligand selected from the group consisting of Ir, Pt, Os, Au, Cu, Re, and Ru is preferable. The ligand preferably has an ortho metal bond.
就可提高磷光量子產率,更提高發光元件之外部量子效率之方面而言,磷光摻雜物較佳為含有選自Ir、Os及Pt中之金屬原子的化合物,進而較佳為銥錯合物、鋨錯合物、鉑錯合物等金屬錯合物,其中,更佳為銥錯合物及鉑錯合物,最佳為鄰位金屬化銥錯合物。摻雜物可為單獨一種,亦可為兩種以上之混合物。 In order to increase the phosphorescence quantum yield and further improve the external quantum efficiency of the light-emitting element, the phosphorescent dopant is preferably a compound containing a metal atom selected from the group consisting of Ir, Os, and Pt, and is preferably a ruthenium complex. A metal complex such as a ruthenium complex or a platinum complex compound, more preferably a ruthenium complex and a platinum complex, is preferably an orthometalated ruthenium complex. The dopants may be used singly or in combination of two or more.
發磷光層中之磷光摻雜物之添加濃度並無特別限定,較佳為0.1~30質量%,更佳為0.1~20質量%。 The concentration of the phosphorescent dopant in the phosphorescent layer is not particularly limited, but is preferably 0.1 to 30% by mass, and more preferably 0.1 to 20% by mass.
又,亦較佳為於鄰接於發磷光層40之層中使用本發明之有機EL元件用材料。例如,於在圖1之元件之電洞傳輸區30與發磷光層40之間形成含有本發明之材料之層(陽極側鄰接層)的情形時,該層具有作為電子障壁層之功能或作為激子阻止層之功能。 Further, it is also preferred to use the material for an organic EL device of the present invention in a layer adjacent to the phosphorescent layer 40. For example, when a layer containing the material of the present invention (anode side adjacent layer) is formed between the hole transport region 30 of the element of FIG. 1 and the phosphorescent layer 40, the layer functions as an electron barrier layer or as a function The function of the exciton blocking layer.
另一方面,於在發磷光層40與電子傳輸區50之間形成含有本發明之有機EL元件用材料之層(陰極側鄰接層)的情形時,該層具有作為電洞障壁層之功能或作為激子阻止層之功能。 On the other hand, when a layer (cathode side adjacent layer) containing the material for an organic EL device of the present invention is formed between the phosphorescent layer 40 and the electron transporting region 50, the layer functions as a hole barrier layer or As a function of the exciton blocking layer.
再者,所謂障壁層(阻止層),係指具有載體之移動障壁、或激子之擴散障壁之功能的層。有如下情況:主要將用以防止電子自發光層漏至電洞 傳輸區之有機層定義為電子障壁層,將用以防止電洞自發光層漏至電子傳輸區之有機層定義為電洞障壁層。又,有將如下有機層定義為激子阻止層(三重態障壁層)之情況:該有機層係用以防止發光層中所生成之三重態激子向具有三重態能量低於發光層之能階的周邊層擴散。 In addition, the barrier layer (blocking layer) means a layer having a function of a moving barrier of a carrier or a diffusion barrier of an exciton. There are the following cases: mainly to prevent the electron self-luminous layer from leaking to the hole The organic layer of the transfer region is defined as an electron barrier layer, and the organic layer for preventing leakage of the hole from the light-emitting layer to the electron transport region is defined as a hole barrier layer. Further, there is a case where an organic layer is defined as an exciton blocking layer (triplet barrier layer) for preventing the triplet excitons generated in the light-emitting layer from having a triplet energy lower than that of the light-emitting layer The peripheral layer of the order spreads.
又,可將本發明之有機EL元件用材料用於鄰接於發磷光層40之層,且亦可進而用於與其鄰接之層接合的其他有機薄膜層。 Further, the material for an organic EL device of the present invention can be used for a layer adjacent to the phosphorescent layer 40, and can be further used for another organic thin film layer bonded to a layer adjacent thereto.
本發明之有機EL元件用材料亦可較佳地用於電子傳輸區50中之電子傳輸層。 The material for an organic EL device of the present invention can also be preferably used for an electron transport layer in the electron transporting region 50.
進而,於形成2層以上發光層之情形時,本發明之有機EL元件用材料亦可較佳地用於形成於發光層間之間隔層。 Further, in the case where two or more light-emitting layers are formed, the material for an organic EL device of the present invention can be preferably used for a spacer layer formed between the light-emitting layers.
圖2係表示本發明之有機EL元件之另一實施形態之層構成的概略圖。 Fig. 2 is a schematic view showing a layer configuration of another embodiment of the organic EL device of the present invention.
有機EL元件2係積層有發磷光層與發螢光層之混合型有機EL元件之例。 The organic EL element 2 is an example in which a mixed organic EL element having a phosphorescent layer and a fluorescent layer is laminated.
有機EL元件2係於發磷光層40與電子傳輸區50之間形成間隔層42及發螢光層44,除此以外,具有與上述有機EL元件1相同之構成。於積層有發磷光層40與發螢光層44之構成中,為了不使於發磷光層40形成之激子擴散至發螢光層44中,有於發螢光層44與發磷光層40之間設置間隔層42之情況。本發明之有機EL元件用材料之三重態能量較大,因此使用本發明之有機EL元件用材料之層可作為間隔層發揮功能。 The organic EL element 2 has the same configuration as the above-described organic EL element 1 except that the spacer layer 42 and the fluorescent layer 44 are formed between the phosphorescent layer 40 and the electron transporting region 50. In the configuration in which the phosphorescent layer 40 and the fluorescent layer 44 are laminated, in order to prevent the excitons formed in the phosphorescent layer 40 from diffusing into the fluorescent layer 44, the phosphor layer 44 and the phosphorescent layer 40 are formed. The case of the spacer layer 42 is provided. Since the material for the organic EL device of the present invention has a large triplet energy, the layer of the material for an organic EL device of the present invention can function as a spacer layer.
於有機EL元件2中,例如藉由將發磷光層40設為黃色發光層,將發螢光層44設為藍色發光層,而獲得白色發光之有機EL元件。再者,於本實施形態中,逐層形成發磷光層40及發螢光層44,但並不限定於此,可分別形成2層以上,亦可根據照明或顯示裝置等用途而適當設定。又,於利用白色發光元件及彩色濾光片製成全彩發光裝置之情形時,就顯色性之觀點而言,有如下情況:由1層以上發光層構成之發光區域較佳為 含有紅、綠、藍(RGB),及紅、綠、藍、黃(RGBY)等複數個波長區域之發光。 In the organic EL element 2, for example, by using the phosphorescent layer 40 as a yellow light-emitting layer and the fluorescent layer 44 as a blue light-emitting layer, a white light-emitting organic EL device is obtained. Further, in the present embodiment, the phosphorescent layer 40 and the fluorescent layer 44 are formed layer by layer. However, the present invention is not limited thereto, and may be formed in two or more layers, and may be appropriately set depending on the use such as illumination or a display device. Further, in the case of using a white light-emitting element and a color filter to form a full-color light-emitting device, from the viewpoint of color rendering properties, it is preferable that a light-emitting region composed of one or more light-emitting layers is preferably It contains red, green, blue (RGB), and red, green, blue, yellow (RGBY) and other wavelength regions of the light.
除上述之實施形態以外,本發明之有機EL元件可採用公知之各種構成。又,發光層之發光可自陽極側、陰極側、或兩側提取。 In addition to the above-described embodiments, the organic EL device of the present invention may have various known configurations. Further, the light emission of the light-emitting layer can be extracted from the anode side, the cathode side, or both sides.
本發明之有機EL元件亦較佳為於陰極與有機薄膜層之界面區域,具有供電子性摻雜物及有機金屬錯合物之至少一者。 The organic EL device of the present invention is also preferably an interface region between the cathode and the organic thin film layer, and has at least one of an electron donating dopant and an organic metal complex.
根據此種構成,謀求有機EL元件中之發光亮度之提高或長壽命化。 According to such a configuration, improvement in luminance of the light emitted from the organic EL element or long life is achieved.
作為供電子性摻雜物,可列舉選自鹼金屬、鹼金屬化合物、鹼土金屬、鹼土金屬化合物、稀土金屬、及稀土金屬化合物等中之至少一種。 The electron-donating dopant may be at least one selected from the group consisting of an alkali metal, an alkali metal compound, an alkaline earth metal, an alkaline earth metal compound, a rare earth metal, and a rare earth metal compound.
作為有機金屬錯合物,可列舉選自含有鹼金屬之有機金屬錯合物、含有鹼土金屬之有機金屬錯合物、及含有稀土金屬之有機金屬錯合物等中之至少一種。 The organic metal complex compound may be at least one selected from the group consisting of an alkali metal-containing organometallic complex, an alkaline earth metal-containing organometallic complex, and a rare earth metal-containing organometallic complex.
作為鹼金屬,可列舉:鋰(Li)(功函數:2.93 eV)、鈉(Na)(功函數:2.36 eV)、鉀(K)(功函數:2.28 eV)、銣(Rb)(功函數:2.16 eV)、銫(Cs)(功函數:1.95 eV)等,較佳為功函數為2.9 eV以下者。於該等之中,較佳為K、Rb、Cs,進而較佳為Rb或Cs,最佳為Cs。 Examples of the alkali metal include lithium (Li) (work function: 2.93 eV), sodium (Na) (work function: 2.36 eV), potassium (K) (work function: 2.28 eV), and ruthenium (Rb) (work function). : 2.16 eV), 铯 (Cs) (work function: 1.95 eV), etc., preferably a work function of 2.9 eV or less. Among these, K, Rb, and Cs are preferable, and Rb or Cs is further preferable, and Cs is most preferable.
作為鹼土金屬,可列舉:鈣(Ca)(功函數:2.9 eV)、鍶(Sr)(功函數:2.0 eV以上且2.5 eV以下)、鋇(Ba)(功函數:2.52 eV)等,尤佳為功函數為2.9 eV以下者。 Examples of the alkaline earth metal include calcium (Ca) (work function: 2.9 eV), krypton (Sr) (work function: 2.0 eV or more and 2.5 eV or less), and barium (Ba) (work function: 2.52 eV), etc. The best work function is 2.9 eV or less.
作為稀土金屬,可列舉:鈧(Sc)、釔(Y)、鈰(Ce)、鋱(Tb)、鐿(Yb)等,尤佳為功函數為2.9 eV以下者。 Examples of the rare earth metal include cerium (Sc), cerium (Y), cerium (Ce), cerium (Tb), and ytterbium (Yb), and a work function of 2.9 eV or less is particularly preferable.
於以上金屬之中,較佳之金屬其還原能力特別高,向電子注入區域相對少量之添加,即可提高有機EL元件中之發光亮度或長壽命化。 Among the above metals, a preferred metal has a particularly high reducing ability, and a relatively small amount is added to the electron injecting region, whereby the light-emitting luminance or the long life of the organic EL element can be improved.
作為鹼金屬化合物,可列舉:氧化鋰(Li2O)、氧化銫(Cs2O)、氧化鉀(K2O)等鹼金屬氧化物,氟化鋰(LiF)、氟化鈉(NaF)、氟化銫(CsF)、 氟化鉀(KF)等鹼金屬鹵化物等,較佳為氟化鋰(LiF)、氧化鋰(Li2O)、氟化鈉(NaF)。 Examples of the alkali metal compound include alkali metal oxides such as lithium oxide (Li 2 O), cesium oxide (Cs 2 O), and potassium oxide (K 2 O), and lithium fluoride (LiF) and sodium fluoride (NaF). An alkali metal halide such as cesium fluoride (CsF) or potassium fluoride (KF) is preferably lithium fluoride (LiF), lithium oxide (Li 2 O) or sodium fluoride (NaF).
作為鹼土金屬化合物,可列舉:氧化鋇(BaO)、氧化鍶(SrO)、氧化鈣(CaO)及混合有該等之鍶酸鋇(BaxSr1-xO)(0<x<1)、鈣酸鋇(BaxCa1-xO)(0<x<1)等,較佳為BaO、SrO、CaO。 Examples of the alkaline earth metal compound include barium oxide (BaO), strontium oxide (SrO), calcium oxide (CaO), and barium strontium citrate (Ba x Sr 1-x O) (0<x<1) Barium strontium sulphate (Ba x Ca 1-x O) (0 < x < 1), etc., preferably BaO, SrO, CaO.
作為稀土金屬化合物,可列舉:氟化鐿(YbF3)、氟化鈧(ScF3)、氧化鈧(ScO3)、氧化釔(Y2O3)、氧化鈰(Ce2O3)、氟化釓(GdF3)、氟化鋱(TbF3)等,較佳為YbF3、ScF3、TbF3。 Examples of the rare earth metal compound include yttrium fluoride (YbF 3 ), yttrium fluoride (ScF 3 ), cerium oxide (ScO 3 ), yttrium oxide (Y 2 O 3 ), cerium oxide (Ce 2 O 3 ), and fluorine. GbF 3 , TbF 3 , etc., preferably YbF 3 , ScF 3 , TbF 3 .
作為有機金屬錯合物,如上所述,只要分別含有鹼金屬離子、鹼土金屬離子、稀土金屬離子中之至少一者作為金屬離子,則並無特別限定。又,配位基較佳為喹啉酚、苯并喹啉酚、吖啶醇(acridinol)、啡啶醇(phenanthridinol)、羥基苯基唑、羥基苯基噻唑、羥基二芳基二唑、羥基二芳基噻二唑、羥基苯基吡啶、羥基苯基苯并咪唑、羥基苯并三唑、羥基氟硼烷、聯吡啶、啡啉、酞菁、卟啉、環戊二烯、β-二酮類、甲亞胺類、及該等之衍生物等,但並不限定於該等。 As described above, the organic metal complex is not particularly limited as long as it contains at least one of an alkali metal ion, an alkaline earth metal ion, and a rare earth metal ion as a metal ion. Further, the ligand is preferably quinolol, benzoquinolol, acridinol, phenanthridinol, hydroxyphenyl Oxazole, hydroxyphenylthiazole, hydroxydiaryl Diazole, hydroxydiarylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzimidazole, hydroxybenzotriazole, hydroxyfluoroborane, bipyridine, morpholine, phthalocyanine, porphyrin, cyclopentadiene And β-diketones, methylimines, and the like, but are not limited thereto.
作為供電子性摻雜物及有機金屬錯合物之添加形態,較佳為於界面區域形成為層狀或島狀。作為形成方法,較佳為如下方法:利用電阻加熱蒸鍍法一面對供電子性摻雜物及有機金屬錯合物之至少任一者進行蒸鍍,一面同時對形成界面區域之發光材料或電子注入材料即有機物進行蒸鍍,而使供電子性摻雜物及有機金屬錯合物之至少任一者分散於有機物中。分散濃度通常以莫耳比計為有機物:供電子性摻雜物及/或有機金屬錯合物=100:1~1:100,較佳為5:1~1:5。 The addition form of the electron donating dopant and the organometallic complex is preferably formed into a layered or island shape in the interface region. As a method of forming, it is preferable to use a resistance heating deposition method to vaporize at least one of an electron-donating dopant and an organic metal complex while simultaneously forming a light-emitting material forming an interface region or The electron injecting material, that is, the organic material, is vapor-deposited, and at least one of the electron-donating dopant and the organic metal complex is dispersed in the organic substance. The dispersion concentration is usually organic in terms of molar ratio: electron donating dopant and/or organometallic complex = 100:1 to 1:100, preferably 5:1 to 1:5.
於使供電子性摻雜物及有機金屬錯合物之至少任一者形成為層狀之情形時,使作為界面之有機層之發光材料或電子注入材料形成為層狀之後,單獨利用電阻加熱蒸鍍法對供電子性摻雜物及有機金屬錯合物之 至少任一者進行蒸鍍,較佳為以層之厚度0.1 nm以上且15 nm以下之形式形成。 When at least one of the electron donating dopant and the organic metal complex is formed into a layered shape, the luminescent material or the electron injecting material of the organic layer as the interface is formed into a layer shape, and then resistance heating is used alone. Evaporation method for electron donating dopants and organometallic complexes At least one of the vapor deposition is preferably formed to have a thickness of the layer of 0.1 nm or more and 15 nm or less.
於使供電子性摻雜物及有機金屬錯合物之至少任一者形成為島狀之情形時,使作為界面之有機層之發光材料或電子注入材料形成為島狀之後,單獨利用電阻加熱蒸鍍法對供電子性摻雜物及有機金屬錯合物之至少任一者進行蒸鍍,較佳為以島之厚度0.05 nm以上且1 nm以下之形式形成。 When at least one of the electron-donating dopant and the organic metal complex is formed into an island shape, the luminescent material or the electron injecting material of the organic layer as the interface is formed into an island shape, and then resistance heating is used alone. The vapor deposition method vapor-deposits at least one of the electron donating dopant and the organic metal complex, and is preferably formed to have a thickness of the island of 0.05 nm or more and 1 nm or less.
又,作為本發明之有機EL元件中之主成分與供電子性摻雜物及有機金屬錯合物之至少任一者的比率,較佳為以莫耳比計為主成分:供電子性摻雜物及/或有機金屬錯合物=5:1~1:5,進而較佳為2:1~1:2。 Moreover, the ratio of the main component of the organic EL device of the present invention to at least one of the electron-donating dopant and the organic metal complex is preferably a molar ratio of the main component: electron-donating The impurity and/or organometallic complex = 5:1 to 1:5, and more preferably 2:1 to 1:2.
於本發明之有機EL元件中,關於使用上述本發明之有機EL元件用材料之層以外之構成,並無特別限定,可使用公知之材料等。以下,針對一實施形態之元件之層,簡單地進行說明,但應用於本發明之有機EL元件中之材料並不限定於以下。 In the organic EL device of the present invention, the configuration other than the layer of the material for an organic EL device of the present invention is not particularly limited, and a known material or the like can be used. Hereinafter, the layer of the element of one embodiment will be briefly described. However, the material applied to the organic EL element of the present invention is not limited to the following.
作為基板,可使用玻璃板、聚合物板等。 As the substrate, a glass plate, a polymer plate, or the like can be used.
作為玻璃板,尤其可列舉:鈉鈣玻璃、含鋇、鍶之玻璃、鉛玻璃、鋁矽酸玻璃、硼矽酸玻璃、鋇硼矽酸玻璃、石英等。又,作為聚合物板,可列舉:聚碳酸酯、丙烯酸、聚對苯二甲酸乙二酯、聚醚碸、聚碸等。 Examples of the glass plate include soda lime glass, bismuth- and bismuth-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium boric acid glass, and quartz. Further, examples of the polymer sheet include polycarbonate, acrylic acid, polyethylene terephthalate, polyether oxime, and polyfluorene.
陽極例如由導電性材料構成,較佳為具有大於4 eV之功函數之導電性材料。 The anode is made of, for example, a conductive material, preferably a conductive material having a work function of more than 4 eV.
作為上述導電性材料,可列舉:碳、鋁、釩、鐵、鈷、鎳、鎢、銀、金、鉑、鈀等及該等之合金,ITO基板、NESA基板中所使用之氧化錫、氧 化銦等氧化金屬,進而,聚噻吩或聚吡咯等有機導電性樹脂。 Examples of the conductive material include carbon, aluminum, vanadium, iron, cobalt, nickel, tungsten, silver, gold, platinum, palladium, etc., and the like, and tin oxide and oxygen used in the ITO substrate and the NESA substrate. An oxidized metal such as indium oxide, or an organic conductive resin such as polythiophene or polypyrrole.
陽極可視需要藉由2層以上之層構成形成。 The anode may be formed by a layer of two or more layers as needed.
陰極例如由導電性材料構成,較佳為具有小於4 eV之功函數之導電性材料。 The cathode is made of, for example, a conductive material, preferably a conductive material having a work function of less than 4 eV.
作為上述導電性材料,可列舉:鎂、鈣、錫、鉛、鈦、釔、鋰、釕、錳、鋁、氟化鋰等及該等之合金,但並不限定於該等。 Examples of the conductive material include magnesium, calcium, tin, lead, titanium, lanthanum, lithium, lanthanum, manganese, aluminum, lithium fluoride, and the like, but are not limited thereto.
又,作為上述合金,可列舉:鎂/銀、鎂/銦、鋰/鋁等作為代表例,但並不限定於該等。合金之比率係根據蒸鍍源之溫度、環境、真空度等而控制,選擇適當之比率。 In addition, examples of the alloy include magnesium/silver, magnesium/indium, and lithium/aluminum as representative examples, but are not limited thereto. The ratio of the alloy is controlled according to the temperature, environment, degree of vacuum, etc. of the vapor deposition source, and an appropriate ratio is selected.
陰極可視需要藉由2層以上之層構成形成,陰極可藉由將上述導電性材料利用蒸鍍或濺鍍等方法形成薄膜而製作。 The cathode may be formed by a layer of two or more layers, and the cathode may be formed by forming a thin film by a method such as vapor deposition or sputtering.
於自陰極提取自發光層發出之光的情形時,對於陰極之發光的透過率較佳為大於10%。 In the case where light emitted from the light-emitting layer is extracted from the cathode, the transmittance of the light emission to the cathode is preferably more than 10%.
又,作為陰極之薄片電阻較佳為數百Ω/□以下,膜厚通常為10 nm~1μm,較佳為50~200 nm。 Further, the sheet resistance as the cathode is preferably several hundred Ω/□ or less, and the film thickness is usually from 10 nm to 1 μm, preferably from 50 to 200 nm.
於以本發明之有機EL元件層材料以外之材料形成發磷光層之情形時,可使用公知之材料作為發磷光層之材料。具體而言,只要參照日本特願2005-517938等即可。 In the case where a phosphorescent layer is formed of a material other than the material of the organic EL device layer of the present invention, a known material can be used as the material of the phosphorescent layer. Specifically, it is sufficient to refer to Japanese Patent Application No. 2005-517938 and the like.
本發明之有機EL元件亦可如圖2所示之元件般具有發螢光層。作為發螢光層,可使用公知之材料。 The organic EL device of the present invention may have a fluorescent layer as in the element shown in FIG. As the fluorescing layer, a known material can be used.
發光層可製成雙主體(亦稱為主體、共主體物(co-host))。具體而言,於發光層中,可藉由組合電子傳輸性之主體與電洞傳輸性之主體,而調整發光層內之載體平衡性。 The luminescent layer can be made into a double body (also known as a body, co-host). Specifically, in the light-emitting layer, the carrier balance in the light-emitting layer can be adjusted by combining the main body of the electron transport property and the body of the hole transport property.
又,亦可製成雙摻雜物。於發光層中,藉由添加兩種以上量子產率較高之摻雜物材料,而使各個摻雜物發光。例如,有藉由將主體與紅色摻雜物、綠色摻雜物共蒸鍍,而實現黃色之發光層之情況。 Also, a double dopant can be produced. In the light-emitting layer, each dopant is caused to emit light by adding two or more dopant materials having a high quantum yield. For example, there is a case where a yellow light-emitting layer is realized by co-evaporating a host with a red dopant and a green dopant.
發光層可為單層,又,亦可為積層構造。若使發光層積層,則可藉由於發光層界面聚積電子與電洞而使再結合區域集中於發光層界面。藉此,提高量子效率。 The light-emitting layer may be a single layer or a laminated structure. When the light-emitting layer is laminated, the recombination region can be concentrated on the light-emitting layer interface by accumulating electrons and holes in the interface of the light-emitting layer. Thereby, the quantum efficiency is improved.
電洞注入、傳輸層係有助於對發光層之電洞注入,傳輸至發光區域之層,且為電洞遷移率較大,離子化能量通常較小為5.6 eV以下之層。 The hole injection and transport layer helps to inject holes into the light-emitting layer and transmit them to the layer of the light-emitting region, and the mobility of the holes is large, and the ionization energy is usually less than 5.6 eV.
作為電洞注入、傳輸層之材料,較佳為以更低之電場強度使電洞傳輸至發光層之材料,進而,電洞之遷移率例如於施加104~106 V/cm之電場時,較佳為至少10-4 cm2/V.s。 As a material for the hole injection and transport layer, it is preferable to transfer the hole to the material of the light-emitting layer with a lower electric field strength, and further, the mobility of the hole is, for example, when an electric field of 10 4 to 10 6 V/cm is applied. Preferably, it is at least 10 -4 cm 2 /V. s.
作為電洞注入、傳輸層之材料,具體而言可列舉:三唑衍生物(參照美國專利3,112,197號說明書等)、二唑衍生物(參照美國專利3,189,447號說明書等)、咪唑衍生物(參照日本特公昭37-16096號公報等)、聚芳基烷烴衍生物(參照美國專利3,615,402號說明書、美國專利第3,820,989號說明書、美國專利第3,542,544號說明書、日本特公昭45-555號公報、日本特公昭51-10983號公報、日本特開昭51-93224號公報、日本特開昭55-17105號公報、日本特開昭56-4148號公報、日本特開昭55-108667號公報、日本特開昭55-156953號公報、日本特開昭56-36656號公報等)、吡唑啉衍生物及吡唑酮衍生物(參照美國專利第3,180,729號說明書、美國專利第4,278,746號說明書、日本特開昭55-88064號公報、日本特開昭55-88065號公報、日本特開昭49-105537號公報、日本特開昭55-51086號公報、日本特開昭56-80051號公報、日本特開昭56-88141號公報、日本特開昭57-45545號公報、日本特開昭54-112637號公報、 日本特開昭55-74546號公報等)、苯二胺衍生物(參照美國專利第3,615,404號說明書、日本特公昭51-10105號公報、日本特公昭46-3712號公報、日本特公昭47-25336號公報、日本特公昭54-119925號公報等)、芳基胺衍生物(參照美國專利第3,567,450號說明書、美國專利第3,240,597號說明書、美國專利第3,658,520號說明書、美國專利第4,232,103號說明書、美國專利第4,175,961號說明書、美國專利第4,012,376號說明書、日本特公昭49-35702號公報、日本特公昭39-27577號公報、日本特開昭55-144250號公報、日本特開昭56-119132號公報、日本特開昭56-22437號公報、西德專利第1,110,518號說明書等)、經胺基取代之查耳酮衍生物(參照美國專利第3,526,501號說明書等)、唑衍生物(美國專利第3,257,203號說明書等中所揭示者)、苯乙烯基蒽衍生物(參照日本特開昭56-46234號公報等)、茀酮衍生物(參照日本特開昭54-110837號公報等)、腙衍生物(參照美國專利第3,717,462號說明書、日本特開昭54-59143號公報、日本特開昭55-52063號公報、日本特開昭55-52064號公報、日本特開昭55-46760號公報、日本特開昭57-11350號公報、日本特開昭57-148749號公報、日本特開平2-311591號公報等)、茋衍生物(參照日本特開昭61-210363號公報、日本特開昭第61-228451號公報、日本特開昭61-14642號公報、日本特開昭61-72255號公報、日本特開昭62-47646號公報、日本特開昭62-36674號公報、日本特開昭62-10652號公報、日本特開昭62-30255號公報、日本特開昭60-93455號公報、日本特開昭60-94462號公報、日本特開昭60-174749號公報、日本特開昭60-175052號公報等)、矽氮烷衍生物(美國專利第4,950,950號說明書)、聚矽烷系(日本特開平2-204996號公報)、苯胺系共聚物(日本特開平2-282263號公報)等。 Specific examples of the material for the hole injection and transport layer include a triazole derivative (refer to the specification of U.S. Patent No. 3,112,197, etc.), An oxadiazole derivative (refer to the specification of U.S. Patent No. 3,189,447, etc.), an imidazole derivative (refer to Japanese Patent Publication No. Sho 37-16096, etc.), a polyarylalkane derivative (refer to the specification of U.S. Patent No. 3,615,402, U.S. Patent No. 3,820,989) Japanese Patent No. 3,542,544, Japanese Patent Publication No. Sho 45-555, Japanese Patent Publication No. 51-10983, Japanese Patent Laid-Open No. 51-93224, Japanese Patent Laid-Open No. 55-17105, and Japanese Patent Laid-Open Japanese Patent Publication No. Sho 55-108667, JP-A-55-156953, JP-A-55-156656, JP-A-56-36656, etc., pyrazoline derivatives and pyrazolone derivatives ( U.S. Patent No. 3,180,729, U.S. Patent No. 4,278,746, Japanese Patent Laid-Open No. Hei 55-88064, Japanese Patent Laid-Open No. 55-88065, Japanese Patent Laid-Open No. SHO-49-105537, and Japanese Patent Laid-Open No. 55 Japanese Unexamined Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. -74546, etc.), benzene A diamine derivative (refer to the specification of U.S. Patent No. 3,615,404, Japanese Patent Publication No. 51-10105, Japanese Patent Publication No. Sho 46-3712, Japanese Patent Publication No. Sho 47-25336, Japanese Patent Publication No. Sho 54-119925, etc.) And arylamine derivatives (refer to the specification of U.S. Patent No. 3,567,450, U.S. Patent No. 3,240,597, U.S. Patent No. 3,658,520, U.S. Patent No. 4,232,103, U.S. Patent No. 4,175,961, U.S. Patent No. 4,012,376, Japanese Patent Publication No. Sho 49-35702, Japanese Patent Publication No. Sho 39-27577, Japanese Laid-Open Patent Publication No. 55-144250, Japanese Patent Laid-Open No. Hei 56-119132, Japanese Patent Laid-Open No. 56-22437, and Patent No. 1,110,518, etc.), an amine-substituted chalcone derivative (refer to the specification of U.S. Patent No. 3,526,501, etc.), An azole derivative (expressed in the specification of the U.S. Patent No. 3,257,203, etc.), a styrene-based hydrazine derivative (refer to JP-A-56-46234, etc.), an anthrone derivative (refer to Japanese Patent Laid-Open No. 54-110837)公报 公报 等 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( Japanese Patent Publication No. Sho 55-46760, JP-A-57-11350, JP-A-57-148749, JP-A No. 2-311591, etc., and anthracene derivatives (see Japanese Patent Laid-Open No. 61-210363) Japanese Laid-Open Patent Publication No. 61-228451, Japanese Patent Laid-Open No. 61-14642, Japanese Patent Laid-Open No. 61-72255, Japanese Patent Laid-Open No. 62-47646, and Japanese Patent Laid-Open No. 62- Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. Japanese Patent Publication No. 174749, JP-A-60-175052, etc., decazane derivatives (U.S. Patent No. 4,950) Japanese Patent Laid-Open No. Hei No. 2-204996, and an aniline copolymer (Japanese Patent Laid-Open No. Hei 2-282263).
又,p型Si、p型SiC等無機化合物亦可用作電洞注入材料。 Further, an inorganic compound such as p-type Si or p-type SiC can also be used as a hole injecting material.
電洞注入、傳輸層之材料可使用交聯型材料,作為交聯型之 電洞注入傳輸層,例如可列舉藉由熱、光等使Chem.Mater.2008,20,413-422、Chem.Mater.2011,23(3),658-681、WO2008108430、WO2009102027、WO2009123269、WO2010016555、WO2010018813等之交聯材經過不溶解化之層。 The material of the hole injection and transport layer can be made of a crosslinked type material as a crosslinked type. The hole is injected into the transport layer, and for example, by heat, light, etc., Chem. Mater. 2008, 20, 413-422, Chem. Mater. 2011, 23 (3), 658-681, WO2008108430, WO2009102027, WO2009123269, WO2010016555, WO2010018813 The crosslinked material is passed through an insoluble layer.
電子注入、傳輸層係有助於對發光層之電子注入,傳輸至發光區域之層,且為電子遷移率較大之層。 The electron injection and transport layer facilitates electron injection into the light-emitting layer, is transmitted to the layer of the light-emitting region, and is a layer having a large electron mobility.
已知有機EL元件係藉由電極(例如陰極)使發出之光反射,因此會干擾直接自陽極提取之發光、及經由利用電極進行之反射而提取之發光。為了高效率地利用該干擾效果,電子注入、傳輸層以數nm~數μm之膜厚適當選擇,但尤其於膜厚較厚時,為了避免電壓上升,於施加104~106 V/cm之電場時,電子遷移率較佳為至少10-5 cm2/Vs以上。 It is known that an organic EL element reflects light emitted by an electrode (for example, a cathode), and thus interferes with light emitted directly from the anode and light emitted by reflection by an electrode. In order to utilize the interference effect efficiently, the electron injection and transport layers are appropriately selected in a film thickness of several nm to several μm, but in particular, when the film thickness is thick, in order to avoid voltage rise, 10 4 to 10 6 V/cm is applied. In the electric field, the electron mobility is preferably at least 10 -5 cm 2 /Vs or more.
作為電子注入、傳輸層中所使用之電子傳輸性材料,可較佳地使用分子內含有1個以上雜原子之芳香族雜環化合物,尤佳為含氮環衍生物。又,作為含氮環衍生物,較佳為具有含氮6員環或5員環骨架之芳香族環,或具有含氮6員環或5員環骨架之縮合芳香族環化合物,例如可列舉骨架中含有吡啶環、嘧啶環、三環、苯并咪唑環、啡啉環、喹唑啉環等的化合物。 As the electron transporting material used in the electron injecting and transporting layer, an aromatic heterocyclic compound containing one or more hetero atoms in the molecule can be preferably used, and a nitrogen-containing ring derivative is particularly preferable. Further, the nitrogen-containing ring derivative is preferably an aromatic ring having a nitrogen-containing 6-membered ring or a 5-membered ring skeleton, or a condensed aromatic ring compound having a nitrogen-containing 6-membered ring or a 5-membered ring skeleton, and examples thereof include The skeleton contains a pyridine ring, a pyrimidine ring, and three a compound such as a ring, a benzimidazole ring, a phenanthroline ring, or a quinazoline ring.
另外,亦可藉由施體性材料之摻雜(n)、受體材料之摻雜(p),形成具有半導體性之有機層。N摻雜之代表例係於電子傳輸性材料中摻雜有Li或Cs等金屬者,P摻雜之代表例係於電洞傳輸性材料中摻雜有F4TCNQ(2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane)等受體材料者(例如,參照日本專利3695714)。 Further, an organic layer having semiconductivity may be formed by doping (n) of a donor material or doping (p) of an acceptor material. A representative example of N doping is in which an electron transporting material is doped with a metal such as Li or Cs, and a representative example of P doping is doped with a F4TCNQ (2, 3, 5, 6- in a hole transporting material). Receptor materials such as Tetrafluoro-7, 7, 8, 8-tetracyanoquinodimethane) (for example, refer to Japanese Patent No. 3695714).
本發明之有機EL元件之各層之形成可應用真空蒸鍍、濺鍍、電漿、離子鍍等乾式成膜法,或旋轉塗佈、浸漬、流塗等濕式成膜法等公 知之方法。 The formation of each layer of the organic EL device of the present invention can be carried out by a dry film formation method such as vacuum deposition, sputtering, plasma or ion plating, or a wet film formation method such as spin coating, dipping or flow coating. Know the method.
各層之膜厚並無特別限定,但必須設定為適當之膜厚。若膜厚過厚,則為了獲得一定之光輸出,較大之施加電壓成為必需而使效率變差。若膜厚過薄,則產生針孔等,即便施加電場亦無法獲得充分之發光亮度。通常之膜厚較佳為5 nm~10μm之範圍,進而較佳為10 nm~0.2μm之範圍。 The film thickness of each layer is not particularly limited, but it must be set to an appropriate film thickness. If the film thickness is too thick, in order to obtain a constant light output, a large applied voltage is necessary and the efficiency is deteriorated. When the film thickness is too small, pinholes or the like are generated, and sufficient light emission luminance cannot be obtained even if an electric field is applied. The film thickness is usually in the range of 5 nm to 10 μm, and more preferably in the range of 10 nm to 0.2 μm.
(1)中間體A之合成 (1) Synthesis of intermediate A
藉由以下步驟合成中間體A。 Intermediate A was synthesized by the following procedure.
於氬氣環境下,將咔唑16.7 g(100 mmol)、3,5-二溴吡啶23.7 g(100 mmol)、碘化銅19.0 g(100 mmol)、反1,2-環己烷二胺11.4 g(100 mmol)、磷酸三鉀42.4 g(200 mmol)添加至脫水1,4-二烷200 ml中,進行96小時加熱回流攪拌。於將反應溶液於減壓下濃縮而獲得之殘渣中,添加甲苯500 ml,加熱至120℃,將不溶物過濾分離。藉由利用矽膠管柱層析儀(己烷/甲苯=4/1(體積比))對濾液於減壓下濃縮而獲得之殘渣進行精製,獲得白色固體之中間體A6.8 g(產率21%)。 Under argon, carbazole 16.7 g (100 mmol), 3,5-dibromopyridine 23.7 g (100 mmol), copper iodide 19.0 g (100 mmol), trans 1,2-cyclohexanediamine 11.4 g (100 mmol), tripotassium phosphate 42.4 g (200 mmol) added to dehydrated 1,4-two The mixture was heated under reflux for 96 hours in 200 ml of alkane. To the residue obtained by concentrating the reaction solution under reduced pressure, 500 ml of toluene was added, and the mixture was heated to 120 ° C, and the insoluble matter was separated by filtration. The residue obtained by concentrating the filtrate under reduced pressure using a hydrazine column chromatography (hexane/toluene = 4/1 (volume ratio)) was purified to obtain a white solid intermediate A6.8 g (yield twenty one%).
(2)化合物A之合成 (2) Synthesis of Compound A
藉由以下步驟合成化合物A。 Compound A was synthesized by the following procedure.
於氬氣環境下,將以EP1972619號公報中所記載之方法合成之中間體B4.08 g(10 mmol)、中間體A3.23 g(10 mmol)、Pd2(dba)3(三(二亞苄基丙酮)二鈀(Tris(dibenzylideneacetone)dipalladium))0.18 g(0.2 mmol)、四氟硼酸三-三級丁基鏻(t-Bu3P-HBF4)0.23 g(0.8 mmol)、三級丁氧基鈉(t-BuONa)1.35 g(14 mmol)添加於脫水二甲苯40 ml中,進行24小時加熱回流攪拌。於將反應溶液於減壓下濃縮而獲得之殘渣中,添加甲苯400 ml,加熱至120℃,將不溶物過濾分離。藉由利用矽膠管柱層析儀(己烷/乙酸乙酯=3/1(體積比))對濾液於減壓下濃縮而獲得之殘渣進行精製,獲得白色固體之化合物A2.9 g(產率45%)。 Intermediate B4.08 g (10 mmol), intermediate A3.23 g (10 mmol), Pd 2 (dba) 3 (three (two) synthesized under the argon atmosphere by the method described in EP1972619 Tris (dibenzylideneacetone dipalladium)) 0.18 g (0.2 mmol), tris-tert-butyl tetrafluoroborate (t-Bu 3 P-HBF 4 ) 0.23 g (0.8 mmol), three Sodium butoxide (t-BuONa) 1.35 g (14 mmol) was added to 40 ml of dehydrated xylene, and stirred under reflux for 24 hours. To the residue obtained by concentrating the reaction solution under reduced pressure, 400 ml of toluene was added, and the mixture was heated to 120 ° C, and the insoluble matter was separated by filtration. The residue obtained by concentrating the filtrate under reduced pressure using a hydrazine column chromatography (hexane/ethyl acetate = 3/1 (volume ratio)) was purified to obtain a compound A2.9 g of a white solid. Rate 45%).
FD-MS分析之結果係相對於分子量650(計算值)為m/e=650(實測值),鑑定為化合物A。 The results of the FD-MS analysis were identified as Compound A with respect to a molecular weight of 650 (calculated value) of m/e = 650 (measured value).
(1)中間體C之合成 (1) Synthesis of intermediate C
藉由以下步驟合成中間體C。 Intermediate C was synthesized by the following procedure.
於氬氣環境下,將咔唑16.7 g(100 mmol)、2,6-二溴吡啶23.7 g(100 mmol)、碘化銅19.0 g(100 mmol)、反1,2-環己烷二胺11.4 g(100 mmol)、磷酸三鉀42.4 g(200 mmol)添加至脫水1,4-二烷200 ml中,進行72小時加熱回流攪拌。於將反應溶液於減壓下濃縮而獲得之殘渣中,添加甲苯500 ml,加熱至120℃,將不溶物過濾分離。藉由利用矽膠管柱層析儀(己烷/甲苯=4/1(體積比))對濾液於減壓下濃縮而獲得之殘渣進行精製,獲得白色固體之中間體C9.7 g(產率30%)。 Under argon, carbazole 16.7 g (100 mmol), 2,6-dibromopyridine 23.7 g (100 mmol), copper iodide 19.0 g (100 mmol), trans 1,2-cyclohexanediamine 11.4 g (100 mmol), tripotassium phosphate 42.4 g (200 mmol) added to dehydrated 1,4-two The mixture was heated under reflux for 72 hours in 200 ml of alkane. To the residue obtained by concentrating the reaction solution under reduced pressure, 500 ml of toluene was added, and the mixture was heated to 120 ° C, and the insoluble matter was separated by filtration. The residue obtained by concentrating the filtrate under reduced pressure using a hydrazine column chromatography (hexane/toluene = 4/1 (volume ratio)) was purified to obtain a white solid intermediate C 9.7 g (yield 30%).
(2)化合物B之合成 (2) Synthesis of Compound B
藉由以下步驟合成化合物B。 Compound B was synthesized by the following procedure.
於氬氣環境下,將中間體B4.08 g(10 mmol)、中間體C3.23 g(10 mmol)、Pd2(dba)30.18 g(0.2 mmol)、四氟硼酸三-三級丁基鏻0.23 g(0.8 mmol)、三級丁氧基鈉1.35 g(14 mmol)添加至脫水二甲苯40 ml中,進行24小時加熱回流攪拌。於將反應溶液於減壓下濃縮而獲得之殘渣中,添加甲苯400 ml,加熱至120℃,將不溶物過濾分離。藉由利用矽膠管柱層析儀(己烷/甲苯=2/1(體積比))對濾液於減壓下濃縮而獲得之殘渣進行精製,獲得白色固體之化合物B3.6 g(產率55%)。 Intermediate B4.08 g (10 mmol), intermediate C3.23 g (10 mmol), Pd 2 (dba) 3 0.18 g (0.2 mmol) and tris-trifluorotetrafluoroborate under argon atmosphere 0.23 g (0.8 mmol) and 1.35 g of sodium tert-butoxide (14 mmol) were added to 40 ml of dehydrated xylene, and the mixture was stirred under reflux for 24 hours. To the residue obtained by concentrating the reaction solution under reduced pressure, 400 ml of toluene was added, and the mixture was heated to 120 ° C, and the insoluble matter was separated by filtration. The residue obtained by concentrating the filtrate under reduced pressure using a hydrazine column chromatography (hexane/toluene = 2/1 (volume ratio)) was purified to obtain a compound B 3.6 g (yield 55) as a white solid. %).
FD-MS分析之結果係相對於分子量650(計算值)為m/e=650(實測值),鑑定為化合物B。 The results of the FD-MS analysis were identified as Compound B with respect to a molecular weight of 650 (calculated value) of m/e = 650 (measured value).
(1)中間體D之合成 (1) Synthesis of intermediate D
於氬氣環境下,添加2-硝基碘苯12.4 g(49.8 mmol)、2-溴苯基硼酸10 g(49.8 mmol)、2 M碳酸鈉水溶液75 ml、甲苯70 ml、1,2-二甲氧基乙烷(DME)70 ml,繼而,添加四(三苯基膦)鈀1.14 g(1 mmol),進行24小時加熱回流攪拌。添加甲苯1000 ml、水200 ml,將有機相分離後,於減壓下濃縮。藉由利用矽膠管柱層析儀(己烷/甲苯=4/1(體積比))對所獲得之殘渣進行精製,獲得白色固體之中間體D12.9 g(產率93%)。 Add 2-nitroiodobenzene 12.4 g (49.8 mmol), 2-bromophenylboronic acid 10 g (49.8 mmol), 2 M sodium carbonate aqueous solution 75 ml, toluene 70 ml, 1,2-two under argon atmosphere 70 ml of methoxyethane (DME), and then 1.14 g (1 mmol) of tetrakis(triphenylphosphine)palladium was added, and the mixture was stirred under reflux for 24 hours. After adding 1000 ml of toluene and 200 ml of water, the organic phase was separated and concentrated under reduced pressure. The residue obtained was purified by a silica gel column chromatography (hexane / toluene = 4 / 1 (volume ratio)) to obtain a white solid D12.9 g (yield: 93%).
(2)中間體E之合成 (2) Synthesis of intermediate E
於氬氣環境下,添加中間體D12.9 g(46.4 mmol)、三苯基膦30.5 g(116 mmol)、鄰二氯苯100 ml,進行12小時加熱回流攪拌。藉由直接將反應液添加至矽膠管柱層析儀(己烷/甲苯=4/1(體積比))中進行精製,獲得白色固體之中間體E4.3 g(產率38%)。 Under an argon atmosphere, an intermediate D12.9 g (46.4 mmol), triphenylphosphine 30.5 g (116 mmol), and o-dichlorobenzene 100 ml were added, and the mixture was stirred under reflux for 12 hours. The reaction liquid was directly purified by adding to a silica gel column chromatography (hexane/toluene=4/1 (volume ratio)) to obtain an intermediate E4.3 g (yield 38%) as a white solid.
(3)中間體F之合成 (3) Synthesis of intermediate F
於氬氣環境下,添加N-苯基咔唑-3-硼酸23.2g(80.8 mmol)、中間體E19.9 g(80.8 mmol)、2 M碳酸鈉水溶液120 ml、1,2-二甲氧基乙烷(DME)400 ml,繼而,添加四(三苯基膦)鈀1.9 g(1.64 mmol),進行12小時加熱回流攪拌。添加甲苯1000 ml、水200 ml,使有機相分離後,於減壓下進行濃縮。利用矽膠管柱層析儀(己烷/甲苯=4/1(體積比))對所獲得之殘 渣進行精製,添加正己烷並析出固體,藉此獲得白色固體之中間體F25.4 g(產率77%)。 Under an argon atmosphere, add 23.2 g (80.8 mmol) of N-phenylcarbazole-3-borate, intermediate E19.9 g (80.8 mmol), 2 M sodium carbonate aqueous solution 120 ml, 1,2-dimethoxy 400 ml of ethane (DME), then 1.9 g (1.64 mmol) of tetrakis(triphenylphosphine)palladium was added, and the mixture was stirred under reflux for 12 hours. After adding 1000 ml of toluene and 200 ml of water, the organic phase was separated and concentrated under reduced pressure. Using a silicone column chromatography (hexane/toluene = 4/1 (volume ratio)) The slag was purified, and n-hexane was added to precipitate a solid, whereby a white solid intermediate F25.4 g (yield: 77%) was obtained.
(4)化合物C之合成 (4) Synthesis of Compound C
於氬氣環境下,將中間體F4.08 g(10 mmol)、中間體A3.23 g(10 mmol)、Pd2(dba)30.18 g(0.2 mmol)、四氟硼酸三-三級丁基鏻0.23 g(0.8 mmol)、三級丁氧基鈉1.35 g(14 mmol)添加至脫水二甲苯40 ml中,進行24小時加熱回流攪拌。於將反應溶液於減壓下濃縮而獲得之殘渣中,添加甲苯400 ml,加熱至120℃,將不溶物過濾分離。藉由利用矽膠管柱層析儀(己烷/乙酸乙酯=4/1(體積比))對濾液於減壓下濃縮而獲得之殘渣進行精製,獲得白色固體之化合物C3.6 g(產率55%)。 Intermediate F4.08 g (10 mmol), intermediate A3.23 g (10 mmol), Pd 2 (dba) 3 0.18 g (0.2 mmol) and tris-trifluorotetrafluoroborate under argon atmosphere 0.23 g (0.8 mmol) and 1.35 g of sodium tert-butoxide (14 mmol) were added to 40 ml of dehydrated xylene, and the mixture was stirred under reflux for 24 hours. To the residue obtained by concentrating the reaction solution under reduced pressure, 400 ml of toluene was added, and the mixture was heated to 120 ° C, and the insoluble matter was separated by filtration. The residue obtained by concentrating the filtrate under reduced pressure using a hydrazine column chromatography (hexane/ethyl acetate = 4/1 (volume ratio)) was purified to obtain a compound C3.6 g of a white solid. Rate 55%).
FD-MS分析之結果係相對於分子量650(計算值)為m/e=650(實測值),鑑定為化合物C。 The results of the FD-MS analysis were identified as Compound C with respect to a molecular weight of 650 (calculated value) of m/e = 650 (measured value).
於氬氣環境下,將中間體F4.08 g(10 mmol)、中間體C3.23 g(10 mmol)、Pd2(dba)30.18 g(0.2 mmol)、四氟硼酸三-三級丁基鏻0.23 g(0.8 mmol)、 三級丁氧基鈉1.35 g(14 mmol)添加至脫水二甲苯40 ml中,進行24小時加熱回流攪拌。於將反應溶液於減壓下濃縮而獲得之殘渣中,添加甲苯400 ml,加熱至120℃,將不溶物過濾分離。藉由利用矽膠管柱層析儀(己烷/乙酸乙酯=3/1(體積比)對濾液於減壓下濃縮而獲得之殘渣進行精製,獲得白色固體之化合物D2.5 g(產率38%)。 Intermediate F4.08 g (10 mmol), intermediate C3.23 g (10 mmol), Pd 2 (dba) 3 0.18 g (0.2 mmol) and tris-trifluorotetrafluoroborate under argon atmosphere 0.23 g (0.8 mmol) and a third grade sodium butoxide 1.35 g (14 mmol) were added to 40 ml of anhydrous xylene, and the mixture was stirred under reflux for 24 hours. To the residue obtained by concentrating the reaction solution under reduced pressure, 400 ml of toluene was added, and the mixture was heated to 120 ° C, and the insoluble matter was separated by filtration. The residue obtained by concentrating the filtrate under reduced pressure using a hexane-purified column chromatography (hexane/ethyl acetate = 3/1 (volume ratio) was purified to obtain a white solid compound D2.5 g (yield 38%).
FD-MS分析之結果係相對於分子量650(計算值)為m/e=650(實測值),鑑定為化合物D。 The results of the FD-MS analysis were identified as Compound D with respect to a molecular weight of 650 (calculated value) of m/e = 650 (measured value).
評價例1[游離電位(Ip)之測定] Evaluation Example 1 [Measurement of free potential (Ip)]
於大氣下使用光電子分光裝置(理研計器股份有限公司製造:AC-3)測定化合物A~D之游離電位(Ip)。具體而言,對化合物A~D照射光,測定此時藉由電荷分離產生之電子量,藉此算出。將化合物A~D之游離電位之測定結果示於表1。 The free potential (Ip) of the compounds A to D was measured under a atmosphere using a photoelectron spectroscopic device (manufactured by Riken Keiki Co., Ltd.: AC-3). Specifically, the compounds A to D were irradiated with light, and the amount of electrons generated by charge separation at this time was measured and calculated. The measurement results of the free potentials of the compounds A to D are shown in Table 1.
又,將下述化合物H-1及H-2之游離電位之測定結果示於表1。 Further, the measurement results of the free potentials of the following compounds H-1 and H-2 are shown in Table 1.
如表1所示,本發明之化合物藉由連結咔唑環,而使HOMO之分布擴散,與存在於環之LUMO之分離變大,因此Ip之值變小。 As shown in Table 1, the compound of the present invention diffuses the distribution of HOMO by linking the carbazole ring, and exists in The separation of the LUMO of the ring becomes large, so the value of Ip becomes small.
具體而言,將以B3LYP/6-31G*opt級別使用Gaussian98(Gaussian公司製造)進行計算而得之化合物A、B、化合物H-1及H-2之HOMO、LUMO之電子雲分布示於圖3~6。根據圖3及4,關於化合物A及B可知如下內容。 Specifically, the electron cloud distributions of HOMO and LUMO of compounds A, B, compounds H-1 and H-2 calculated by using Gaussian 98 (manufactured by Gaussian) at the B3LYP/6-31G*opt level are shown in the figure. 3~6. 3 and 4, the following are known about the compounds A and B.
.藉由以作為含氮六員環之吡啶環連結兩個咔唑環(Cz),以含氮六員環切斷π共軛系,未使π電子擴散至Cz-Az-Cz整體。藉此,具有較高之T1能階。 . The two carbazole rings (Cz) are linked by a pyridine ring as a nitrogen-containing six-membered ring, and the π-conjugated system is cleaved by a nitrogen-containing six-membered ring, so that π electrons are not diffused to the entire Cz-Az-Cz. Thereby, there is a higher T1 energy level.
.藉由於鍵結於吡啶環之一咔唑環(Cz)上,進而鍵結另一咔唑環(Cz),而使HOMO之分布擴散至Cz-Cz上。藉此,提高電洞注入性。 . The distribution of HOMO is diffused onto Cz-Cz by bonding to one of the carbazole rings (Cz) of the pyridine ring and further bonding another carbazole ring (Cz). Thereby, the hole injection property is improved.
.HOMO於Cz-Cz上分布,LUMO於含氮六員環上分布,而使HOMO與LUMO分離。藉此,提高電荷注入性。 . HOMO is distributed on Cz-Cz, and LUMO is distributed on the nitrogen-containing six-membered ring, and HOMO is separated from LUMO. Thereby, the charge injection property is improved.
根據以上內容可知,化合物A及B之電洞側、電子側之兩者注入性之平衡性優異,可實現元件之低電壓化、高效率化。 As can be seen from the above, the balance between the injection side and the electron side of the compounds A and B is excellent, and the voltage of the element can be reduced and the efficiency can be improved.
另一方面,如圖5所示,化合物H-1係HOMO與LUMO之重合度較大。因此電荷之注入性與化合物A、B相比降低。可知實際之Ip測定值與本發明化合物相比,化合物H-1與H-2亦一併表示較大之值,電荷之注入障壁較大。 On the other hand, as shown in Fig. 5, the compound H-1 has a large degree of overlap between HOMO and LUMO. Therefore, the charge injectability is lowered as compared with the compounds A and B. It is understood that the actual Ip measurement value is also larger than the compound of the present invention, and the compound H-1 and H-2 also represent a larger value, and the charge injection barrier is larger.
(1)有機EL元件之製作 (1) Production of organic EL elements
對25 mm×75 mm×1.1 mm之附有ITO透明電極之玻璃基板(Geomatec公司製造)於異丙醇中實施5分鐘之超音波洗淨,進而,實施30分鐘之UV(Ultraviolet,紫外線)臭氧洗淨。 A 25 mm × 75 mm × 1.1 mm glass substrate (made by Geomatec) with an ITO transparent electrode was subjected to ultrasonic cleaning for 5 minutes in isopropyl alcohol, and further, UV (Ultraviolet) ozone was applied for 30 minutes. Wash.
將如此洗淨之附有透明電極之玻璃基板安裝於真空蒸鍍裝置 之基板固持器,首先,於玻璃基板之形成有透明電極線一側之面上,以覆蓋透明電極之方式將下述化合物I以厚度20 nm進行蒸鍍,形成電洞注入層。繼而,於該電洞注入層上,將下述化合物II以厚度60 nm進行蒸鍍,形成電洞傳輸層。 The glass substrate with the transparent electrode thus washed is mounted on the vacuum evaporation device In the substrate holder, first, the following compound I was vapor-deposited to a thickness of 20 nm so as to cover the transparent electrode on the surface on which the transparent electrode line was formed on the glass substrate to form a hole injection layer. Then, on the hole injection layer, the following compound II was vapor-deposited at a thickness of 60 nm to form a hole transport layer.
於該電洞傳輸層上,將作為磷光主體化合物之以合成例1所得之化合物A,與作為發磷光材料之下述化合物D-1以厚度50 nm進行共蒸鍍,形成發磷光層。發磷光層內中之化合物A之濃度為80質量%,化合物D-1之濃度為20質量%。 On the hole transport layer, the compound A obtained in Synthesis Example 1 as a phosphorescent host compound and the following compound D-1 as a phosphorescent material were co-deposited at a thickness of 50 nm to form a phosphorescent layer. The concentration of the compound A in the phosphorescent layer was 80% by mass, and the concentration of the compound D-1 was 20% by mass.
繼而,於該發磷光層上,將下述化合物H-3以厚度10 nm進行蒸鍍,形成電子傳輸層1。進而,於該電子傳輸層1上,將下述化合物III以厚度10 nm進行蒸鍍,形成電子傳輸層2後,於電子傳輸層2上,依序積層厚度1 nm之LiF、厚度80 nm之金屬Al,形成陰極。再者,關於作為電子注入性電極之LiF,以1□/min之速度形成。 Then, on the phosphorescent layer, the following compound H-3 was deposited at a thickness of 10 nm to form an electron transport layer 1. Further, on the electron transport layer 1, the following compound III was deposited at a thickness of 10 nm to form an electron transport layer 2, and then a layer of LiF having a thickness of 1 nm and a thickness of 80 nm were sequentially deposited on the electron transport layer 2. Metal Al forms a cathode. Further, LiF as an electron injecting electrode was formed at a rate of 1 □/min.
(2)有機EL元件之發光性能評價 (2) Evaluation of luminescence properties of organic EL elements
藉由直流電流驅動使製作之有機EL元件發光,並測定亮度、電流密度,求出電流密度1 mA/cm2下之電壓及發光效率(外部量子效率)。將該等發光性能之評價結果示於表2。 The produced organic EL element was driven to emit light by a DC current, and the luminance and current density were measured to determine the voltage at a current density of 1 mA/cm 2 and the luminous efficiency (external quantum efficiency). The evaluation results of these luminescent properties are shown in Table 2.
作為電子傳輸層1之化合物,使用化合物A代替化合物H-3,除此以外,以與實施例1相同之方式製作有機EL元件,並對發光性能進行評價。將結果示於表2。 An organic EL device was produced in the same manner as in Example 1 except that the compound A was used instead of the compound H-3 as the compound of the electron-transporting layer 1, and the luminescent properties were evaluated. The results are shown in Table 2.
進而,求出初期亮度3,000 cd/m2之亮度70%壽命(亮度降低至初期亮度之70%之時間)。將亮度70%壽命之結果示於表3。 Further, a luminance of 70% of the initial luminance of 3,000 cd/m 2 was obtained (the luminance was reduced to 70% of the initial luminance). The results of the 70% brightness life are shown in Table 3.
作為發光層主體化合物,使用化合物B代替化合物A,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。將結果示於表2。 An organic EL device was produced and evaluated in the same manner as in Example 1 except that the compound B was used instead of the compound A as the light-emitting layer host compound. The results are shown in Table 2.
作為發光層主體化合物,使用化合物B代替化合物A,作為電子傳輸層1之化合物,使用化合物B代替化合物H-3,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。進而,以與實施例2相同之方式評價亮度70%壽命。將結果示於表2、3。 An organic EL device was produced and evaluated in the same manner as in Example 1 except that the compound B was used as the compound of the electron-transporting layer 1 and the compound B was used instead of the compound H-3. . Further, the luminance 70% life was evaluated in the same manner as in the second embodiment. The results are shown in Tables 2 and 3.
作為發光層主體化合物,使用化合物C代替化合物A,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。將結果示於表2。 An organic EL device was produced and evaluated in the same manner as in Example 1 except that the compound C was used instead of the compound A as the light-emitting layer host compound. The results are shown in Table 2.
作為發光層主體化合物,使用化合物C代替化合物A,作為電子傳輸層1之化合物,使用化合物C代替化合物H-3,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。將結果示於表2。 An organic EL device was produced and evaluated in the same manner as in Example 1 except that the compound C was used as the compound of the electron-transporting layer 1 and the compound C was used instead of the compound H-3. . The results are shown in Table 2.
作為發光層主體化合物,使用化合物H-4代替化合物A,作為電子傳輸層1之化合物,使用化合物A代替化合物H-3,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。將結果示於表2。 An organic EL device was produced in the same manner as in Example 1 except that the compound H-4 was used as the compound of the electron-transporting layer 1 as the compound of the electron-emitting layer 1 and the compound A was used instead of the compound H-3. Conduct an evaluation. The results are shown in Table 2.
作為發光層主體化合物,使用化合物H-4代替化合物A,作為電子傳輸層1之化合物,使用化合物B代替化合物H-3,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。將結果示於表2。 An organic EL device was produced in the same manner as in Example 1 except that the compound H-4 was used as the compound of the electron-transporting layer 1 as the compound of the electron-emitting layer 1 and the compound B was used instead of the compound H-3. Conduct an evaluation. The results are shown in Table 2.
作為發光層主體化合物,使用化合物H-4代替化合物A,作為電子傳 輸層1之化合物,使用化合物D代替化合物H-3,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。將結果示於表2。 As the light-emitting layer host compound, compound H-4 is used instead of compound A as an electron transfer. An organic EL device was produced and evaluated in the same manner as in Example 1 except that the compound of the layer 1 was used instead of the compound H-3. The results are shown in Table 2.
作為發光層主體化合物,使用化合物H-1代替化合物A,作為電子傳輸層1之化合物,使用化合物H-1代替化合物H-3,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。進而,以與實施例2相同之方式評價亮度70%壽命。將結果示於表2、3。 An organic EL device was produced in the same manner as in Example 1 except that the compound H-1 was used as the compound of the electron-transporting layer 1 as the compound of the electron-emitting layer 1 and the compound H-1 was used instead of the compound H-3. And evaluate. Further, the luminance 70% life was evaluated in the same manner as in the second embodiment. The results are shown in Tables 2 and 3.
作為發光層主體化合物,使用化合物H-2代替化合物A,作為電子傳輸層1之化合物,使用化合物H-2代替化合物H-3,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。進而,以與實施例2相同之方式評價亮度70%壽命。將結果示於表2、3。 An organic EL device was produced in the same manner as in Example 1 except that the compound H-2 was used as the compound of the electron-transporting layer 1 as the compound of the electron-emitting layer 1 and the compound H-2 was used instead of the compound H-3. And evaluate. Further, the luminance 70% life was evaluated in the same manner as in the second embodiment. The results are shown in Tables 2 and 3.
作為發光層主體化合物,使用化合物H-4代替化合物A,作為電子傳輸層1之化合物,使用化合物H-1代替化合物H-3,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。將結果示於表2。 An organic EL device was produced in the same manner as in Example 1 except that the compound H-4 was used as the compound of the electron-transporting layer 1 as the compound of the electron-emitting layer 1 and the compound H-1 was used instead of the compound H-3. And evaluate. The results are shown in Table 2.
作為發光層主體化合物,使用化合物H-4代替化合物A,作為電子傳輸層1之化合物,使用化合物H-2代替化合物H-3,除此以外,以與實施例1相同之方式製作有機EL元件,並進行評價。將結果示於表2。 An organic EL device was produced in the same manner as in Example 1 except that the compound H-4 was used as the compound of the electron-transporting layer 1 as the compound of the electron-emitting layer 1 and the compound H-2 was used instead of the compound H-3. And evaluate. The results are shown in Table 2.
實施例1~9之元件與比較例1~4之元件相比,藉由電荷平衡性之提高而更加高效率化。又,實施例1~9之元件由於提高了電洞注入性及電子注入性,因而更加低電壓化。尤其是,於使用本發明之化合物作為發光層中之主體材料之情形時,電荷平衡性之提高所帶來之長壽命化之效果較大。 The elements of Examples 1 to 9 were more efficient than the elements of Comparative Examples 1 to 4 by the improvement of charge balance. Further, since the elements of Examples 1 to 9 have improved hole injectability and electron injectability, they are further reduced in voltage. In particular, when the compound of the present invention is used as a host material in the light-emitting layer, the effect of increasing the life of the charge balance is large.
本發明之化合物可用作有機EL元件用材料。本發明之有機EL元件可利用於壁掛式電視之平板顯示器等之平面發光體,影印機、印表機、液晶顯示器之背光裝置或量表類等之光源、顯示板、標識燈等中。 The compound of the present invention can be used as a material for an organic EL device. The organic EL device of the present invention can be used for a planar light-emitting body such as a flat panel display of a wall-mounted television, a backlight of a photocopier, a printer, a backlight of a liquid crystal display, a light source such as a gauge, a display panel, an indicator lamp, or the like.
上文中已對若干本發明之實施形態及/或實施例詳細地進行 說明,但業者可容易地於實質上不偏離本發明之新穎教示及效果之情況下而對作為該等例示之實施形態及/或實施例施加多種變更。因此,該等多種變更包含於本發明之範圍內。 Several embodiments and/or embodiments of the invention have been described in detail above. It is to be understood that various modifications may be made in the embodiments and/or embodiments of the embodiments described herein without departing from the invention. Accordingly, such various modifications are intended to be included within the scope of the present invention.
本說明書中記載之文獻及成為本申請案之巴黎公約優先權之基礎之日本申請案說明書的內容全部引用於此。 The contents of the documents described in the present specification and the Japanese application specification which is the basis of the priority of the Paris Convention of the present application are hereby incorporated by reference.
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