TW201339330A - Shadow mask strip - Google Patents
Shadow mask strip Download PDFInfo
- Publication number
- TW201339330A TW201339330A TW101111410A TW101111410A TW201339330A TW 201339330 A TW201339330 A TW 201339330A TW 101111410 A TW101111410 A TW 101111410A TW 101111410 A TW101111410 A TW 101111410A TW 201339330 A TW201339330 A TW 201339330A
- Authority
- TW
- Taiwan
- Prior art keywords
- mask strip
- hollowed out
- mask
- frame
- pattern
- Prior art date
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Operating, Guiding And Securing Of Roll- Type Closing Members (AREA)
Abstract
Description
本發明是有關於一種遮罩條與一種遮罩的製造方法。The present invention relates to a method of fabricating a mask strip and a mask.
在現行圖案化製程中，常藉由多條遮罩條所組成的遮罩搭配鍍膜製程來形成圖案化膜層。遮罩是金屬薄板藉由蝕刻的方式製作出多條細長的金屬線，其中多條金屬線之間的空隙可作為鍍膜製程時的開口區。In the current patterning process, a patterned film layer is often formed by a mask composed of a plurality of mask strips in combination with a coating process. The mask is a thin metal plate which is formed by etching to form a plurality of elongated metal wires, wherein a gap between the plurality of metal wires can be used as an opening region in the coating process.
由於金屬線相當細長，易扭曲變形，因此在遮罩條的兩側設置有拉伸區。在將遮罩條固定至框架上以構成遮罩時，於拉伸區處施以預張力，使金屬線橫向繃緊。藉此，讓金屬線維持直線而使開口區維持正確的形狀與位置，並得以對抗鍍膜時溫度所造成的膨脹量，還有抵抗遮罩與欲鍍膜之基板的重量所造成的彎曲變形。Since the metal wires are relatively slender and easily distorted, stretched regions are provided on both sides of the mask strip. When the mask strip is fixed to the frame to form a mask, a pre-tension is applied to the stretch zone to laterally tighten the wire. Thereby, the metal wire is maintained in a straight line to maintain the correct shape and position of the open area, and to resist the amount of expansion caused by the temperature at the time of coating, and the bending deformation caused by the weight of the substrate against the mask and the film to be coated.
然而，在施予預張力時，現行設計之拉伸區靠近施力點的位置在力量轉換以及受力形變方面的自由度不夠高。因此靠近拉伸區的開口區易呈現波浪狀的皺褶形變，使遮罩條無法服貼於欲鍍膜之基板上，造成開口區的位置偏移、鍍膜厚度不均以及欲鍍膜位置走位等問題發生。另一方面，為避免增加預張力會造成皺褶形變之狀況加劇，或是造成皺褶形變之影響範圍向內擴張，需限制預張力的大小。然，此舉常造成預張力不足的情況發生。在預張力不足的情況下，由於遮罩條不夠穩固，無法抵擋欲鍍膜之基板的重量以及鍍膜時所累積的膜層的重量所造成的彎曲變形，且在清洗時易鬆脫變形，因此常造成遮罩的使用率以及壽命大幅地降低。However, when the pre-tension is applied, the position of the stretch zone of the current design close to the point of application of the force is not sufficiently high in terms of force conversion and deformation of the force. Therefore, the open area near the stretching zone is prone to wavy wrinkle deformation, so that the mask strip cannot be attached to the substrate to be coated, causing the positional shift of the open area, the uneven thickness of the coating, and the position of the desired coating. The problem has occurred. On the other hand, in order to avoid an increase in the pre-tension, the condition of the wrinkle deformation is intensified, or the influence range of the wrinkle deformation is inwardly expanded, and the amount of the pre-tension is limited. Of course, this often results in insufficient pre-tension. In the case of insufficient pre-tension, since the mask strip is not sufficiently stable, it cannot withstand the weight of the substrate to be coated and the bending deformation caused by the weight of the film layer accumulated during coating, and is easy to loosen and deform during cleaning, so often The use rate and life of the mask are greatly reduced.
本發明提供一種遮罩條，其可提供良好的鍍膜品質且具有良好的使用率以及壽命。The present invention provides a mask strip that provides good coating quality with good use and longevity.
本發明提供一種遮罩條，用以被固定於一框架上而構成一遮罩，具有兩個拉伸區與一圖案區，其中遮罩條被固定於框架後，圖案區位於框架內，拉伸區位於框架外，且各拉伸區遠離圖案區的一側具有一V型切口。The present invention provides a mask strip for being fixed to a frame to form a mask having two stretching zones and a pattern zone, wherein the mask strip is fixed to the frame, and the pattern zone is located in the frame. The stretching zone is located outside the frame, and a side of each stretching zone away from the pattern zone has a V-shaped slit.
在本發明之一實施例中，前述之各拉伸區在V型切口的端點與圖案區之間具有多個挖空區。In an embodiment of the invention, each of the aforementioned stretching zones has a plurality of hollowed out regions between the end points of the V-shaped slits and the pattern regions.
在本發明之一實施例中，前述之各挖空區呈長條狀，且挖空區彼此平行排列。In an embodiment of the invention, each of the aforementioned hollowed out areas is elongated and the hollowed out areas are arranged in parallel with each other.
在本發明之一實施例中，前述之各挖空區呈三角形。In an embodiment of the invention, each of the aforementioned hollowed out regions has a triangular shape.
在本發明之一實施例中，前述之挖空區沿著平行於圖案區與拉伸區的邊界的方向排成多列。In an embodiment of the invention, the aforementioned hollowed out zone is arranged in a plurality of rows along a direction parallel to the boundary of the pattern zone and the stretch zone.
在本發明之一實施例中，前述之挖空區中位於同一列者的大小相同。In an embodiment of the invention, the size of the same row in the aforementioned hollowed out area is the same.
在本發明之一實施例中，前述之挖空區的大小隨著與圖案區的距離縮短而遞減。In an embodiment of the invention, the size of the aforementioned hollowed out area decreases as the distance from the pattern area decreases.
在本發明之一實施例中，前述之各挖空區的一角指向圖案區。In an embodiment of the invention, an angle of each of the aforementioned hollowed out areas is directed to the pattern area.
本發明另提供一種遮罩條，用以被固定於一框架上而構成一遮罩，具有兩個拉伸區與一圖案區，其中遮罩條被固定於框架後，圖案區位於框架內，拉伸區位於框架外，各拉伸區具有多個挖空區。The present invention further provides a mask strip for being fixed on a frame to form a mask having two stretching zones and a pattern zone, wherein the mask strip is fixed to the frame, and the pattern zone is located in the frame. The stretching zone is located outside the frame, and each stretching zone has a plurality of hollowed out zones.
在本發明之一實施例中，前述之各拉伸區遠離圖案區的一側具有一切口。In an embodiment of the invention, the side of each of the aforementioned stretching zones away from the pattern zone has a mouth.
在本發明之一實施例中，前述之各挖空區呈長條狀，且挖空區彼此平行排列。In an embodiment of the invention, each of the aforementioned hollowed out areas is elongated and the hollowed out areas are arranged in parallel with each other.
在本發明之一實施例中，前述之各挖空區呈三角形。In an embodiment of the invention, each of the aforementioned hollowed out regions has a triangular shape.
在本發明之一實施例中，前述之挖空區沿著平行於圖案區與拉伸區的邊界的方向排成多列。In an embodiment of the invention, the aforementioned hollowed out zone is arranged in a plurality of rows along a direction parallel to the boundary of the pattern zone and the stretch zone.
在本發明之一實施例中，前述之挖空區中位於同一列者的大小相同。In an embodiment of the invention, the size of the same row in the aforementioned hollowed out area is the same.
在本發明之一實施例中，前述之挖空區的大小隨著與圖案區的距離縮短而遞減。In an embodiment of the invention, the size of the aforementioned hollowed out area decreases as the distance from the pattern area decreases.
在本發明之一實施例中，前述之挖空區的一角指向圖案區。In an embodiment of the invention, an angle of the aforementioned hollowed out area is directed to the pattern area.
基於上述，本提案之遮罩條可藉由在拉伸區提供一V型切口及/或多個挖空區，均勻地分散預張力，使拉伸區靠近施力點的位置在力量轉換以及受力形變的自由度得以提升。因此，靠近拉伸區的開口區可保持良好的平整度而得以服貼於欲鍍膜之基板上，進而提升製程良率。Based on the above, the mask strip of the present invention can uniformly disperse the pre-tension by providing a V-shaped slit and/or a plurality of hollowed-out areas in the stretching zone, so that the position of the stretching zone near the point of application is in the power conversion and The freedom of deformation is enhanced. Therefore, the open area near the stretching zone can maintain a good flatness and can be applied to the substrate to be coated, thereby improving the process yield.
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will be more apparent from the following description.
圖1為本發明一實施例之遮罩條的上視示意圖。圖2為圖1中之拉伸區的上視示意圖。1 is a top plan view of a mask strip in accordance with an embodiment of the present invention. Figure 2 is a top plan view of the stretch zone of Figure 1.
請同時參照圖1與圖2，本實施例之遮罩條110，用以被固定於一框架120上而構成一遮罩100。在本實施例中，遮罩條110例如是藉由焊接、鎖固或其他方式被固定於框架120上。另外，遮罩100所包括的遮罩條110數量可大於1。換言之，通常一個遮罩100是由被固定在一個框架120上的多個遮罩條110所構成，以便於進行大面積的蒸鍍或其他製程。Referring to FIG. 1 and FIG. 2 simultaneously, the mask strip 110 of the present embodiment is used to be fixed to a frame 120 to form a mask 100. In the present embodiment, the mask strip 110 is secured to the frame 120, for example, by soldering, locking, or other means. Additionally, the number of mask strips 110 included in the mask 100 can be greater than one. In other words, typically a mask 100 is constructed of a plurality of mask strips 110 that are secured to a frame 120 to facilitate large area evaporation or other processes.
遮罩條110具有兩個拉伸區A1與一圖案區A2。在遮罩條110被固定於框架120後，圖案區A2位於框架120內，拉伸區A1位於框架120外。而在遮罩條110被固定於框架120後，即可將拉伸區A1移除，以利蒸鍍或其他製程的進行。在本實施例中，遮罩條110的製作方法例如是將金屬薄板藉由蝕刻的方式在圖案區A2製作出多個重複的圖案，其中各圖案包括多條細長的金屬線112，而各金屬線112之間的空隙114在圖案化製程中，可作為鍍膜製程時的開口區。舉例而言，各金屬線112之間的空隙114可作為有機發光二極體(Organic Light Emitting Diode,OLED)蒸鍍製程時欲形成圖案化膜層之開口區，例如用於形成OLED中各個畫素區的有機發光材料層。於蒸鍍製程中，將遮罩100放置在蒸鍍材料源與目標基板之間，並使各空隙114對應各畫素區。在蒸鍍完成後，蒸鍍材料源的材料只會沈積在各畫素區中而不會超出範圍。因此，藉由調變空隙114的尺寸、形狀以及位置可控制蒸鍍製程時欲沈積材料的區域的尺寸、形狀以及位置。當然，遮罩條110以及遮罩100之用途不限於此，而空隙114也不限定於對應畫素區。The mask strip 110 has two stretch zones A1 and one pattern zone A2. After the mask strip 110 is secured to the frame 120, the pattern area A2 is located within the frame 120 and the stretch zone A1 is located outside of the frame 120. After the mask strip 110 is fixed to the frame 120, the stretched area A1 can be removed to facilitate evaporation or other processes. In this embodiment, the mask strip 110 is fabricated by, for example, etching a thin metal sheet to form a plurality of repeating patterns in the pattern area A2, wherein each pattern includes a plurality of elongated metal lines 112, and each metal The gap 114 between the lines 112 can be used as an open area during the coating process in the patterning process. For example, the gap 114 between the metal lines 112 can be used as an open area of the organic light emitting diode (OLED) evaporation process to form a patterned film layer, for example, to form various paintings in the OLED. a layer of organic light-emitting material in the prime zone. In the vapor deposition process, the mask 100 is placed between the vapor deposition material source and the target substrate, and each of the voids 114 corresponds to each pixel region. After the evaporation is completed, the material of the evaporation material source is deposited only in the respective pixel regions without exceeding the range. Therefore, by modulating the size, shape, and position of the void 114, the size, shape, and position of the region where the material is to be deposited during the vapor deposition process can be controlled. Of course, the use of the mask strip 110 and the mask 100 is not limited thereto, and the void 114 is not limited to the corresponding pixel area.
在實務上，由於各金屬線112相當細長，易扭曲變形，因此藉由在拉伸區A1處施以預張力F，使金屬線橫向繃緊，並固定於框架120上，可避免於鍍膜製程時欲鍍膜位置走位，並提供足以承載鍍膜時溫度所造成的膨脹量以及遮罩與欲鍍膜之基板的重量所造成的彎曲變形。In practice, since the metal wires 112 are relatively slender and easily deformed, the metal wire is stretched laterally and fixed on the frame 120 by applying a pre-tension F at the stretching zone A1, thereby avoiding the coating process. When the coating position is desired, the amount of expansion caused by the temperature at the time of coating and the bending deformation caused by the weight of the mask and the substrate to be coated are provided.
本實施例之遮罩條110在各拉伸區A1遠離圖案區A2的一側具有一V型切口V，縮小預張力F之施力點的面積，進而使施力較為集中。此外，藉由增加V型切口V的深度，提高V型切口V週遭受力形變的自由度，本實施例之遮罩條110可更均勻地分散預張力。具體而言，將集中於施力點的應力分散至一整面拉伸區A1。因此，本實施例之遮罩條110可降低因應力集中所造成之波浪狀的皺褶形變。The mask strip 110 of the present embodiment has a V-shaped slit V on the side of each of the stretching zones A1 away from the pattern area A2, and reduces the area of the biasing point of the pre-tension F, thereby further concentrating the applied force. Further, by increasing the depth of the V-shaped slit V, the degree of freedom of the force deformation of the V-shaped slit V is increased, and the mask strip 110 of the present embodiment can more uniformly disperse the pre-tension. Specifically, the stress concentrated at the point of application is dispersed to a full-face stretching zone A1. Therefore, the mask strip 110 of the present embodiment can reduce the wavy wrinkle deformation caused by stress concentration.
另外，本實施例之遮罩條110更可選擇性地在V型切口V的端點X與圖案區A2之間提供多個挖空區A3。在本實施例中，各挖空區A3呈彼此平行排列之長條狀，且挖空區A3例如是沿著平行於圖案區A2與拉伸區A1之邊界的方向排成一列。In addition, the mask strip 110 of the present embodiment more selectively provides a plurality of hollowed out areas A3 between the end point X of the V-shaped slit V and the pattern area A2. In the present embodiment, each of the hollowed out areas A3 is elongated in parallel with each other, and the hollowed out area A3 is, for example, arranged in a line parallel to the direction parallel to the boundary between the pattern area A2 and the stretched area A1.
值得一提的是，本實施例之遮罩條110藉由提供多個挖空區A3，可讓預張力更平均地傳進圖案區A2。因此，均勻傳遞的預張力可使圖案區A2保持平整。另外，由於本實施例之遮罩條110具有良好的力量轉換以及受力形變的自由度，因此可進一步承受更大的預張力F。本實施例之遮罩條110可提供較大的承載力，足以支撐欲鍍膜之基板的重量以及鍍膜時所累積的膜層的重量。另外，在清洗時也較不易鬆脫變形。因此，本實施例之遮罩條110所製成的遮罩具有良好的使用率以及壽命。It is worth mentioning that the mask strip 110 of the present embodiment allows the pre-tension to be more evenly transferred into the pattern area A2 by providing a plurality of hollowed out areas A3. Therefore, the uniformly transmitted pre-tension can keep the pattern area A2 flat. In addition, since the mask strip 110 of the present embodiment has a good degree of force conversion and freedom of deformation of the force, it can further withstand a larger pre-tension F. The mask strip 110 of the present embodiment can provide a large bearing capacity sufficient to support the weight of the substrate to be coated and the weight of the film layer accumulated during coating. In addition, it is less prone to loose deformation during cleaning. Therefore, the mask made by the mask strip 110 of the present embodiment has a good use rate and a long life.
當然，本提案之遮罩條除了可為上述型態外，亦可有其他型態，以下將搭配圖3另舉一實施例作說明。圖3為本發明另一實施例之遮罩條的上視示意圖。Of course, the mask strip of the present invention may have other types in addition to the above-mentioned types, and an embodiment will be described below with reference to FIG. 3 is a top plan view of a mask strip according to another embodiment of the present invention.
請參照圖3，本實施例之遮罩條210與遮罩條110具有相似的型態，惟二者差異處在於拉伸區A1的型態。本實施例之遮罩條210在拉伸區A2處具有多個挖空區A4。在本實施例中，各挖空區A4例如是呈三角形，而各挖空區的一角指向圖案區A2。此外，挖空區A4沿著平行於圖案區A2與拉伸區A1的邊界的方向排成多列，且位於同一列者的大小相同，其中挖空區A4的大小隨著與圖案區的距離縮短而遞減。與前一實施例相似，本實施例之遮罩條210所製成的遮罩具有良好的使用率以及壽命。Referring to FIG. 3, the mask strip 210 of the present embodiment has a similar pattern to the mask strip 110, but the difference is in the shape of the stretch zone A1. The mask strip 210 of the present embodiment has a plurality of hollowed out areas A4 at the stretch zone A2. In the present embodiment, each of the hollowed out areas A4 is, for example, triangular, and a corner of each of the hollowed out areas is directed to the pattern area A2. In addition, the hollowed out area A4 is arranged in a plurality of columns along a direction parallel to the boundary of the pattern area A2 and the stretched area A1, and the size of the same row is the same, wherein the size of the hollowed out area A4 is the distance from the pattern area Shorten and decrease. Similar to the previous embodiment, the mask made by the mask strip 210 of the present embodiment has a good use rate and a long life.
當然，本實施例之遮罩條210在各拉伸區A1遠離圖案區A2的一側亦可選擇性的配置有一切口U。藉由增加切口U的深度，可提高切口U週遭受力形變的自由度。因此，本實施例之遮罩條210可更均勻地分散預張力，並進一步地降低因應力集中所造成之波浪狀的皺褶形變。Of course, the mask strip 210 of the present embodiment can also be selectively disposed with a slit U on the side of each of the stretching zones A1 away from the pattern area A2. By increasing the depth of the slit U, the degree of freedom of the force deformation of the slit U can be increased. Therefore, the mask strip 210 of the present embodiment can more uniformly disperse the pre-tension and further reduce the wavy wrinkle deformation due to stress concentration.
綜上所述，本提案之遮罩條是在拉伸區提供V型切口及/或多個挖空區，均勻地分散預張力，使拉伸區靠近施力點的位置在力量轉換以及受力形變的自由度等方面得以提升。藉此，改善習知技術於開口區因受力不均所產生之波浪狀的皺褶形變，進而確保本實施例的遮罩條平整地服貼於欲鍍膜之基板上，減緩開口區的位置偏移、鍍膜厚度不均以及鍍膜位置走位等問題的發生。另外，本提案之遮罩條在力量轉換以及受力形變的自由度得以提升的情況下，可進一步提升預張力，改善習知技術欲避免皺褶形變所造成預張力不足的情況。因此，本提案之遮罩條可較為穩固地固定於框架上，並具有足夠的承載力去承載欲鍍膜之基板的重量以及鍍膜時所累積的膜層的重量。是以，本提案之遮罩條所組成的遮罩具有良好的使用率以及壽命。In summary, the mask strip of the present proposal provides a V-shaped slit and/or a plurality of hollowed-out areas in the stretch zone, uniformly dispersing the pre-tension, and the position of the stretch zone near the point of application is in the power conversion and The degree of freedom of force deformation has been improved. Thereby, the wavy wrinkle deformation caused by the uneven force in the open area is improved, thereby ensuring that the mask strip of the embodiment is uniformly applied to the substrate to be coated, and the position of the open area is slowed down. Problems such as offset, uneven coating thickness, and position of the coating. In addition, the mask strip of the present invention can further enhance the pre-tension when the degree of freedom of force conversion and force deformation is improved, and improve the conventional technique to avoid the shortage of pre-tension caused by wrinkle deformation. Therefore, the mask strip of the present proposal can be relatively firmly fixed to the frame and has sufficient bearing capacity to carry the weight of the substrate to be coated and the weight of the film layer accumulated during coating. Therefore, the mask composed of the mask strip of the present proposal has a good use rate and a longevity.
雖然本發明已以實施方式揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
100．．．遮罩100. . . Mask
110、210．．．遮罩條110, 210. . . Mask strip
112．．．金屬線112. . . metal wires
114．．．開口區114. . . Open area
120．．．框架120. . . frame
A1．．．拉伸區A1. . . Stretch zone
A2．．．圖案區A2. . . Pattern area
A3、A4．．．挖空區A3, A4. . . Knockout area
F．．．預張力F. . . Pretension
V．．．V型切口V. . . V-shaped incision
X．．．端點X. . . End point
U．．．切口U. . . incision
圖1為本發明一實施例之遮罩條的上視示意圖。1 is a top plan view of a mask strip in accordance with an embodiment of the present invention.
圖2為圖1中之拉伸區的上視示意圖。Figure 2 is a top plan view of the stretch zone of Figure 1.
圖3為本發明另一實施例之遮罩條的上視示意圖。3 is a top plan view of a mask strip according to another embodiment of the present invention.
100．．．遮罩100. . . Mask
110．．．遮罩條110. . . Mask strip
112．．．金屬線112. . . metal wires
114．．．空隙114. . . Void
120．．．框架120. . . frame
A1．．．拉伸區A1. . . Stretch zone
A2．．．圖案區A2. . . Pattern area
A3．．．挖空區A3. . . Knockout area
F．．．預張力F. . . Pretension
V．．．V型切口V. . . V-shaped incision
X．．．端點X. . . End point
Claims (16)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101111410A TWI472631B (en) | 2012-03-30 | 2012-03-30 | Shadow mask strip |
| CN201210204475.3A CN102703857B (en) | 2012-03-30 | 2012-06-20 | Shade strip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101111410A TWI472631B (en) | 2012-03-30 | 2012-03-30 | Shadow mask strip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201339330A true TW201339330A (en) | 2013-10-01 |
| TWI472631B TWI472631B (en) | 2015-02-11 |
Family
ID=46896900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101111410A TWI472631B (en) | 2012-03-30 | 2012-03-30 | Shadow mask strip |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102703857B (en) |
| TW (1) | TWI472631B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018110253A1 (en) | 2016-12-14 | 2018-06-21 | 大日本印刷株式会社 | Vapor deposition mask device and method for manufacturing vapor deposition mask device |
| JP7121918B2 (en) * | 2016-12-14 | 2022-08-19 | 大日本印刷株式会社 | Evaporation mask device and method for manufacturing evaporation mask device |
| JP7151745B2 (en) * | 2020-07-16 | 2022-10-12 | 凸版印刷株式会社 | Evaporation mask intermediate, evaporation mask, and evaporation mask manufacturing method |
| CN114716154B (en) * | 2022-04-15 | 2023-05-12 | 业成科技（成都）有限公司 | Shield assembly |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4608874B2 (en) * | 2003-12-02 | 2011-01-12 | ソニー株式会社 | Vapor deposition mask and manufacturing method thereof |
| KR101182239B1 (en) * | 2010-03-17 | 2012-09-12 | 삼성디스플레이 주식회사 | Mask and mask assembly having the same |
-
2012
- 2012-03-30 TW TW101111410A patent/TWI472631B/en active
- 2012-06-20 CN CN201210204475.3A patent/CN102703857B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN102703857A (en) | 2012-10-03 |
| CN102703857B (en) | 2016-04-13 |
| TWI472631B (en) | 2015-02-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI618804B (en) | Mask strips and method for manufacturing organic light emitting diode display using the same | |
| US20160322572A1 (en) | Mask | |
| US10662519B2 (en) | Mask, method for manufacturing the same, and mask assembly | |
| JP5816519B2 (en) | Mask frame assembly, mask frame assembly manufacturing method, and organic light emitting display device manufacturing method | |
| CN104062842B (en) | A kind of mask plate and its manufacturing method, process unit | |
| CN205420527U (en) | Coating by vaporization mask slice and display substrates | |
| TWI472631B (en) | Shadow mask strip | |
| CN109423600B (en) | Mask strip, preparation method thereof and mask plate | |
| JP2006028583A5 (en) | Manufacturing apparatus, film forming method, and light emitting device manufacturing method | |
| KR20170112673A (en) | Metal mask for deposition, and oled pannel using the same | |
| JP3197439U (en) | Ceramic mask for organic light emitting diode (OLED) manufacturing | |
| WO2015100880A1 (en) | Mask plate and manufacturing method therefor | |
| US20140326177A1 (en) | Mask and a method for manufacturing the same | |
| WO2019184265A1 (en) | Mask plate and display panel | |
| CN110331377A (en) | Exposure mask piece and preparation method thereof, aperture mask plate and its application method, film deposition equipment | |
| TWI757041B (en) | Mask | |
| CN108281575A (en) | Mask plate and preparation method thereof | |
| KR100700660B1 (en) | Mask and method for fabricating thereof | |
| US10901313B2 (en) | Division mask | |
| KR102188656B1 (en) | Rib Mask with Having a tensile force dispersion structure | |
| KR20090003014A (en) | Mask frame assembly for thin layer deposition | |
| CN103966548A (en) | Mask plate, manufacturing method of mask plate and mask assembly with mask plate | |
| WO2017028446A1 (en) | Crucible for oled evaporation source and manufacturing method therefor | |
| WO2019218606A1 (en) | Mask, display device, display panel, and display terminal | |
| KR102161150B1 (en) | Multiple curved plane evaporation source for organic film deposition process of high resolution AMOLED device |