TW201337034A - High-frequency antenna circuit and inductively coupled plasma processing apparatus - Google Patents

Abstract

PURPOSE: A high-frequency antenna circuit and an inductively coupled plasma processing device are provided to improve power efficiency by suppressing heat generation of a matching circuit. CONSTITUTION: A high-frequency antenna circuit includes a plasma generation antenna(16), a high-frequency power supply(18), and a matching circuit(19). The plasma generation antenna is composed of multiple sectionalized antennas(16-1,...,16-5) and generates plasma in a processing chamber. The high-frequency power supply supplies high-frequency power to the plasma generation antenna. The matching circuit is inserted between the high-frequency power supply and the plasma generation antenna. The multiple sectionalized antennas form the plasma generation antenna, and high-frequency power is distributed to the multiple sectionalized antennas after passing through the matching circuit. Parallel resonance capacitor circuits(30-1,...,30-5) are installed at each of the multiple sectionalized antennas in parallel.

Description

High frequency antenna circuit and inductively coupled plasma processing device

The present invention relates to a high frequency antenna circuit and an inductively coupled plasma processing apparatus.

Along with the enlargement of the glass substrate used in the FPD, the plasma device for treating it is also gradually required to have a large area of plasma control. In the past, an inductively coupled plasma processing apparatus capable of obtaining high-density plasma was used for the treatment of a glass substrate. However, in order to meet the above requirements, it is gradually adopted to divide the antenna into a plurality of segments and to divide each of the divided antennas. The method of control.

As one of the methods of dividing the antenna, a combination of a helical antenna composed of a plurality of antenna sheets and a dielectric or aluminum disposed between the helical antenna and the processing chamber is divided into a plurality of windows. (Patent Document 1) Further, in other aspects, a linear antenna is disposed in each of the divided aluminum windows (the same is disclosed in Patent Document 1).

Further, Patent Document 2 describes a technique in which a parallel resonance circuit is provided on an antenna to increase a current flowing through the antenna.

Prior technical literature

Patent Document 1 Japanese Patent Publication No. 2011-029584

Patent Document 2 Japanese Patent Laid-Open Publication No. 2010-135298

However, in an inductively coupled plasma processing apparatus including a split antenna and distributing a supply current from a high-frequency power source through a matching circuit, if a large induced electric field is to be formed inside the processing chamber, it is necessary to increase the allocation to the individual split antenna. The current. Therefore, the matching circuit generates a large current flowing through the matching circuit, and the power consumption is increased.

In order to suppress the heating of the matching circuit, as long as the reduction from the high frequency power supply is via the matching circuit It is sufficient to distribute the current to the individual split antennas, but once the distribution current is small, it is difficult to form a sufficient induced electric field inside the processing chamber.

The present invention provides a high-frequency antenna circuit and an inductively coupled plasma processing apparatus capable of distributing an inductively coupled plasma processing apparatus that supplies a current from a high-frequency power source via a matching circuit while suppressing heat generation of the matching circuit while providing a split antenna. A sufficient induced electric field is formed inside the processing chamber.

A high frequency antenna circuit according to a first aspect of the present invention is for generating an inductively coupled plasma in a processing chamber of a processing substrate of an inductively coupled plasma processing apparatus; characterized in that: a plasma generating antenna is used for the processing A plasma generated in the room; a high-frequency power source supplies high-frequency power to the plasma generating antenna; a matching circuit is disposed between the high-frequency power source and the plasma generating antenna; and the plurality of divided antennas constitute the plasma The antenna is generated, and the high frequency power is transmitted through the matching circuit; and the parallel resonant capacitor circuit is disposed in parallel at an individual portion of the plurality of divided antennas.

An inductively coupled plasma processing apparatus according to a second aspect of the present invention is an inductively coupled plasma generated in a processing chamber for processing a substrate; characterized by comprising: a top plate disposed on an upper portion of the processing chamber; and a plasma generating antenna; The system is disposed on the top plate and is composed of a plurality of divided antennas; and the parallel resonant capacitor circuit is disposed in parallel at an individual portion of the plurality of divided antennas.

According to the present invention, it is possible to provide a high-frequency antenna circuit and an inductively coupled plasma processing apparatus capable of improving the power efficiency of an inductively coupled plasma processing apparatus having a split antenna while suppressing heat generation of the matching circuit.

1‧‧‧Processing room

16‧‧‧High frequency antenna (plasma generating antenna)

16-1~16-5‧‧‧ Split antenna

18‧‧‧High frequency power supply

19‧‧‧Matching circuit

30-1~30-5‧‧‧Parallel resonant capacitor circuit

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view schematically showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention.

Fig. 2A is a plan view showing an example of a metal window and a high frequency antenna of the inductively coupled plasma processing apparatus shown in Fig. 1.

Fig. 2B is a plan view showing an example of a metal window and a high frequency antenna which are divided into nine.

Fig. 2C is a plan view showing an example of a metal window and a high frequency antenna divided into 25 cases.

Fig. 3 is a circuit diagram showing an example of a circuit of a high-frequency antenna circuit provided in the inductively coupled plasma processing apparatus according to the embodiment of the present invention.

4 is a circuit diagram showing a first modification of the radio-frequency antenna circuit.

Fig. 5 is a circuit diagram showing a second modification of the radio-frequency antenna circuit.

Fig. 6 is a plan view showing a first modification of the split antenna.

Fig. 7 is a circuit diagram showing an example of a circuit of a high-frequency antenna circuit provided in the inductively coupled plasma processing apparatus having the split antenna shown in Fig. 6.

Fig. 8 is a circuit diagram showing a third modification of the radio-frequency antenna circuit.

Fig. 9 is a circuit diagram showing a fourth modification of the radio-frequency antenna circuit.

Fig. 10 is a circuit diagram showing a fifth modification of the radio-frequency antenna circuit.

Fig. 11 is a circuit diagram showing a sixth modification of the radio-frequency antenna circuit.

Fig. 12 is a plan view showing a second modification of the split antenna.

Fig. 13 is a circuit diagram showing an example of a circuit of a high-frequency antenna circuit provided in the inductively coupled plasma processing apparatus having the split antenna shown in Fig. 12.

Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention, and Fig. 2A is a plan view showing an example of a metal window and a high frequency antenna of the inductively coupled plasma processing apparatus shown in Fig. 1. This apparatus is used for, for example, etching of a metal film, an ITO film, an oxide film, or the like at the time of forming a thin film transistor on a glass substrate for FPD, or an ashing process of a resist film. Here, examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like.

As shown in Fig. 1, the inductively coupled plasma processing apparatus is a gas-tight processing chamber 1 having a rectangular tube shape made of an electrically conductive material such as aluminum whose inner wall surface is subjected to anodizing treatment (aluminum-resistant treatment). The processing chamber 1 is grounded by the ground line 1a.

The interior of the processing chamber 1 is partitioned by a metal window 2 formed by insulating the processing chamber 1 It is the antenna room 3 and the processing chamber 4. In this example, the metal window 2 is formed in a top plate provided inside the processing chamber 1, and is made of, for example, a non-magnetic conductive metal. Examples of the non-magnetic conductive metal are aluminum or an aluminum alloy.

Between the side wall 3a of the antenna chamber 3 and the side wall 4a of the processing chamber 4, a support frame 5 that protrudes toward the inside of the processing chamber 1 and a cross-shaped support beam 6 that also serves as a shower frame for supplying a processing gas are provided. When the support beam 6 also serves as a shower frame, a process gas flow path 7 extending in parallel with respect to the processed surface of the substrate G to be processed is formed inside the support beam 6. The processing gas flow path 7 is connected to a plurality of processing gas release holes 7a for discharging a processing gas into the processing chamber 4.

The processing gas supply pipe 8 is connected to the upper portion of the support beam 6 so as to communicate with the gas flow path 7. The processing gas supply pipe 8 is connected to the outside of the processing chamber 1 from the ceiling of the processing chamber 1, and is connected to a processing gas supply system 9 including a processing gas supply source, a valve system, and the like. When the plasma treatment is performed, the process gas system is supplied from the process gas supply system 9 to the process gas flow path 7 of the support beam 6 via the process gas supply pipe 8, and then discharged from the process gas release hole 7a to the process chamber. 4 internal. The support frame 5 and the support beam 6 are made of a conductive material, preferably made of metal. In the case of metal, it is aluminum.

The metal window 2 is divided into four metal windows 2-1 to 2-4 in this example as shown in Fig. 2A. In this example, the planar shape of the processing chamber 4 is rectangular. In this example, the support beam 6 is formed in a cross shape in plan view from the center of the rectangle to the midpoint of each side, and the support frame 5 surrounds the cross-shaped support beam 6. Thereby, four openings are formed in a lattice shape between the support frame 5 and the support beam 6. The four metal windows 2-1 to 2-4 are placed on the support frame 5 and the support beam 6 via the insulator 10 so as to block the four openings, respectively. Thereby, the metal windows 2-1 to 2-4 are insulated from the support frame 5, the support beam 6, and the processing chamber 1, and the metal windows 2-1 to 2-4 are also insulated from each other. The material of the insulator 10 is exemplified by ceramics or polytetrafluoroethylene (PTFE). Further, the section along the line II shown in Fig. 2A corresponds to the section shown in Fig. 1.

A mounting table 11 is disposed on the bottom wall 4b of the processing chamber 4. The mounting table 11 is made of a conductive material such as aluminum whose surface is anodized, and is placed on the bottom wall 4b with the insulator 12 insulated from the bottom wall 4b. Further, the mounting table 11 is connected to the bias power supply 23 via the matching circuit 22 in this example. A substrate to be processed G such as an LCD glass substrate is placed on the mounting surface of the mounting table 11. The substrate G to be processed placed on the mounting table 11 is adsorbed and held on the mounting surface of the mounting table 11 by an electrostatic chuck (not shown) provided inside the mounting table 11.

Further, a side wall 4a of the processing chamber 4 is provided with a carry-out port 4c for carrying in and carrying in the substrate G to be processed. The carry-out port 4c is opened and closed by the gate valve 13.

Further, an exhaust port 4d is provided in the bottom wall 4b of the processing chamber 4. The exhaust port 4d is connected to the exhaust pipe 14. The exhaust pipe 14 is connected to an exhaust device 15 including a vacuum pump or the like. The exhaust device 15 exhausts the inside of the processing chamber 4 via the exhaust pipe 14 and the exhaust port 4d. For example, in the process of applying plasma treatment to the substrate G to be processed, the inside of the processing chamber 4 is set to a low pressure such as a predetermined degree of vacuum, for example, 1.33 Pa.

Inside the antenna room 3, the high frequency (RF) antenna 16 is disposed to face the respective metal windows 2-1 to 2-4. The high-frequency antenna 16 is isolated by the spacer 21 composed of an insulating member in a state of being insulated from the metal windows 2-1 to 2-4. The high frequency antenna 16 is inside the processing chamber 1, and in this example, a plasma generating antenna that generates plasma inside the processing chamber 4.

The high-frequency antenna 16 of the present example is divided into four according to the metal windows 2-1 to 2-4, and is divided into separate split antennas 16-1 to 16-4 with respect to each of the metal windows 2-1 to 2-4. It is composed of a collection. The split antennas 16-1 to 16-4 of this example respectively include a plurality of linear antennas as shown in FIG. 2A, and in this example, four linear antennas. The plurality of linear antennas of this example are arranged so as to extend from the metal windows 2-1 to 2-4 to the other end from one of the metal windows 2-1 to 2-4, and are respectively connected in parallel. Further, an example of a circuit for a high frequency antenna circuit will be described later.

One of the split antennas 16-1 to 16-4 is connected to the power supply members 17-1 to 17-4 (Fig. 1 only shows 17-1, 17-2). The split antennas 16-1 to 16-4 are supplied with high frequency power from the high frequency power source 18 via the matching circuit 19 and the power feeding members 17-1 to 17-4. An example of the frequency of the high frequency power is, for example, 13.56 MHz. The matching circuit 19 interposed between the high-frequency power source 18 and the split antennas 16-1 to 16-4 is used for impedance matching between the high-frequency power source 18 side and the plasma load side, and is generally referred to as matching. Device. The matching device has a variable capacitor or a variable inductor therein, or has a variable capacitor and a variable inductor, and controls the capacitance of the capacitor and the inductance of the inductor to perform the high frequency power supply 18 side and the electric power. Impedance matching between the load side of the slurry.

The other ends of the split antennas 16-1 to 16-4 are connected to, for example, the side wall 3a of the antenna room 3 or a ground potential member provided separately to be grounded. At this time, a terminal capacitor may be provided between the split antennas 16-1 to 16-4 and a ground potential member such as the side wall 3a of the antenna room 3.

The high frequency power supplied to the split antennas 16-1 to 16-4 forms an induced electric field inside the processing chamber 4. The process gas system released from the gas release port 7a to the inside of the process chamber 4 is slurryed by an induced electric field formed inside the process chamber 4.

The inductively coupled plasma processing apparatus is controlled by being connected to a control unit 50 composed of a computer. The control unit 50 is connected to the user interface 51 and the memory unit 52. The user interface 51 includes a keyboard for command input operation or the like for managing the inductively coupled plasma processing device, or a display for visually displaying the operational state of the inductively coupled plasma processing device. The memory unit 52 stores a so-called recipe for implementing a control program for various processes performed by the inductively coupled plasma processing device under the control of the control unit 50, or for inductively coupling in response to processing conditions. Each component of the slurry processing apparatus executes a program for processing. Further, the recipe may be stored in a hard disk or a semiconductor memory, or may be placed in a predetermined position of the memory unit 52 in a state of being housed in a portable memory medium such as a CD-ROM or a DVD. Furthermore, the recipe can also be suitably transferred from other devices, for example via a dedicated line. Further, in response to an instruction from the user interface 51 or the like, an arbitrary recipe is called from the storage unit 52 to be executed by the control unit 50, whereby the control unit 50 is under the control of the control unit 50. The desired treatment is performed by an inductively coupled plasma processing apparatus.

Fig. 3 is a circuit diagram showing an example of a circuit of a high-frequency antenna circuit provided in the inductively coupled plasma processing apparatus according to the embodiment of the present invention.

As shown in FIG. 3, the high frequency antenna circuit has the above-described high frequency antenna (plasma generating antenna) 16, high frequency power source 18, and matching circuit 19. The high-frequency antenna 16 is composed of a plurality of divided antennas, and in this example, four divided antennas 16-1 to 16-4. The split antennas 16-1 to 16-4 are distributed to the high frequency power that has passed through the matching circuit 19 from the high frequency power source 18. In the split antennas 16-1 to 16-4 of this example, a plurality of linear antennas are connected in parallel. In this example, four linear antennas L1a to L1d and ... L4a to L4d are connected in parallel. Further, although the linear antenna is not a coil antenna, since the inductance component is included, the linear antennas L1a to L1d, ... L4a to L4d are displayed as inductors in Fig. 3 . Further, the radio-frequency antenna circuit of this example has parallel resonance capacitor circuits 30-1 to 30-4 which are respectively connected in parallel with the split antennas 16-1 to 16-4. The parallel resonance capacitor circuits 30-1 to 30-4 have capacitors C1 to C4 therein. Thereby, the divided antennas 16-1 to 16-4 and the parallel resonant capacitor circuits 30-1 to 30-4 respectively constitute a total of four LC circuits.

The values of the inductance L of the split antennas 16-1 to 16-4 and the values of the capacitance C of the parallel resonance capacitor circuits 30-1 to 30-4 are set such that the LC circuit generates parallel resonance and is divided into the split antenna 16-1. 16-4 flows through the value of the maximum loop current, or the LC circuit is close to the parallel resonance state and flows through the sufficiently large loop currents at the split antennas 16-1 to 16-4.

The formula of the parallel resonance is as shown in the following formula (1).

1/LC=ω 2...(1)

In the formula (1), L is an inductance, C is an electrostatic capacitance, and ω is an angular frequency. The angular frequency ω = 2 π f (f is the frequency).

Conventionally, in an inductively coupled plasma processing apparatus including a split antenna and a supply current supplied from a high-frequency power source via a matching circuit, it is necessary to increase a current flowing through the individual split antenna in order to form a large induced electric field in the processing chamber. A large current flows through the matching circuit. once When a large current flows through the matching circuit, the coils and capacitors provided inside the matching circuit may have a large power loss due to heat generation.

In response to such a situation, the inductively coupled plasma processing apparatus of one embodiment is connected to the parallel split capacitor circuits 30-1 to 30-4 in the respective divided antennas 16-1 to 16-4. When the plasma processing is performed using the parallel resonance capacitor circuits 30-1 to 30-4, the LC circuit including the split antennas 16-1 to 16-4 and the parallel resonance capacitor circuits 30-1 to 30-4 is generated. Parallel resonance or a state close to parallel resonance. Thereby, the loop current flows through the LC circuit. As a result of the LC circuit flowing through the loop current, even if the current flowing through the matching circuit 19 is depressed, a large current can flow through the split antennas 16-1 to 16-4. By reducing the current flowing through the matching circuit 19, the current value flowing through the coil Lmatch, the capacitor C1match, and the C2match provided in the matching circuit 19 becomes small, and the heat generation of these elements can be suppressed.

Therefore, according to the inductively coupled plasma processing apparatus including the split antenna according to the embodiment, it is possible to obtain an inductive coupling power that can supply a supply current from the high-frequency power source via the matching circuit while suppressing the heat generation of the matching circuit while providing the split antenna. A high frequency antenna circuit and an inductively coupled plasma processing device for forming a sufficient induced electric field inside the processing chamber of the slurry processing apparatus.

In the above embodiment, the capacitors C1 to C4 included in the parallel resonance capacitor circuits 30-1 to 30-4 are set to be capacitively fixed. However, the capacitors C1 to C4 are not limited to the capacitor type, and may be capacitor variable capacitors VC1 to VC4 as shown in FIG. When the capacitance variable capacitors VC1 to VC4 are used, the split antennas 16-1 to 16-4 can be independent, and the electrostatic capacitances of the parallel resonant capacitor circuits 30-1 to 30-4 can be individually adjusted. Therefore, the state of the parallel resonance can be adjusted for each of the individual split antennas 16-1 to 16-4.

Further, the capacitance variable capacitors VC1 to VC4 are expensive compared to the capacitance type capacitors C1 to C4. Therefore, when it is desired to depress the price of the inductively coupled plasma processing apparatus, it is only necessary to select a capacitor in the capacitor of the parallel resonant capacitor circuits 30-1 to 30-4. Capacitors C1~C4 can be used.

On the other hand, when it is desired to adjust the intensity of the induced electric field formed inside the processing chamber 4 to control the plasma distribution inside the processing chamber 4, etc., as long as the capacitors in the parallel resonant capacitor circuits 30-1 to 30-4 In this respect, the capacitor variable capacitors VC1 to VC4 can be selected. Further, as shown in FIG. 5, the current distribution point N1 in the power supply path and the distribution point side connection point N2 as the split antennas 16-1 to 16-4 and the parallel resonance capacitor circuits 30-1 to 30-4 may be used. Capacitor variable capacitors VCa to VCd for distributing current control are provided between. When the capacitance variable capacitors VCa to VCd for current control are disposed, the split antennas 16-1 to 16-4 can be made independent, and the distributed current supplied to the split antennas 16-1 to 16-4 can be individually adjusted. The intensity of the induced electric field formed inside the processing chamber 4 can also be adjusted for each of the split antennas 16-1 to 16-4 by adjusting the distributed current, for example, the plasma distribution generated inside the processing chamber 4 can be controlled.

Of course, the capacitance variable capacitors VC1 to VCd for the distributed current control can be used in combination with the capacitance variable capacitors VC1 to VC4 for parallel resonance control shown in FIG. In the case of use, since the distribution current and the parallel resonance can be independently controlled, the plasma distribution can be controlled, for example, with higher precision, which is an advantage.

In addition, the plasma distribution within the processing chamber 4 is most appropriately distributed depending on the application. For example, in the memory unit 52, the capacitance values of the capacitance variable capacitors VC1 to VC4 which are the most suitable plasma distribution for different applications or the capacitance values of the capacitance variable capacitors VCa to VCd or the capacitances of both of them are previously stored. Value, and the capacitance variable capacitors VC1 to VC4 or the capacitance variable capacitors VCa to VCd or both of them are adjusted according to the application. In this way, the plasma treatment can be performed by forming an optimum plasma distribution inside the processing chamber 4 according to the application by an inductively coupled plasma processing apparatus.

In addition, as shown in FIG. 6, the split antenna may not be divided according to the divided metal windows 2-1 to 2-4. In the example shown in Fig. 6, five divided antennas 16-1 to 16-5 are provided for the metal windows 2-1 to 2-4. In this example, the split antennas 16-1 to 16-4 are arranged in the processing chamber. The divided antenna 16-5 is disposed at the center portion of the processing chamber 4 at the peripheral portion of the top plate of 4. Further, as shown in the circuit diagram of Fig. 7, the split antennas 16-1 to 16-5 are connected in parallel with the parallel resonant capacitor circuits 30-1 to 30-5, respectively.

In this manner, even if the split antennas 16-1 to 16-5 are not divided with the metal windows 2-1 to 2-4, the above advantages can be obtained.

Further, in the split antenna shown in FIG. 2A, as shown in FIG. 8, for example, the split antennas 16-1 to 16-4, the split antennas 16-1 to 16-4, and the parallel resonance capacitor circuits 30-1 to 30 may be used. An ammeter 40 is provided between the grounding point side connection points N3 of -4. The current meter 40 is used to monitor the current value actually flowing through the split antennas 16-1 to 16-4, and the monitoring result is fed back to the distributed current control capacitor variable capacitors VCa to VCe, for example, to the internal plasma of the processing chamber 4. The distribution becomes a uniform mode, or the plasma distribution inside the processing chamber 4 becomes the most appropriate distribution in the application to adjust the capacitance of the capacitance variable capacitors VCa to VCe.

According to this configuration, the distribution current can be controlled based on the current value actually flowing through the split antennas 16-1 to 16-4, and the plasma distribution generated inside the processing chamber 4 can be controlled with higher precision.

Further, as shown in FIG. 9, when the parallel resonance capacitor circuits 30-1 to 30-4 are provided with the capacitance variable capacitors VC1 to VC4, the monitoring result of the ammeter 40 can be fed back to the resonance state control capacitor variable type. Capacitors VC1~VC4. In this case, based on the current value actually flowing through the split antennas 16-1 to 16-4, the plasma distribution inside the processing chamber 4 becomes uniform, or the plasma distribution inside the processing chamber 4 becomes the most applied. The resonance state of the LC circuits constituted by the parallel resonance capacitor circuits 30-1 to 30-4 and the split antennas 16-1 to 16-4 is controlled in an appropriate manner, whereby the current flowing through the divided antennas can be controlled.

Further, although not specifically illustrated, the monitoring results of the ammeter 40 may be fed back to the resonance state control capacitor variable capacitors VC1 to VC4 and the distributed current control capacitor variable capacitors VCa to VCd to control the LC circuit. Both the resonance state and the distributed current. In this case, the plasma distribution inside the processing chamber 4 becomes uniform, or the processing chamber 4 The controllability of the internal plasma distribution to the most appropriate distribution in the application can be better.

In addition, in FIG. 8 and FIG. 9, the case where the split antenna is divided into four is described. However, even if the split antenna is divided into five as shown in FIG. 6, it is naturally also possible to provide an ammeter to measure the current value, and control each. Capacitor variable capacitors to control the distribution of plasma density.

Further, as shown in FIG. 6, when the split antenna is divided into the split antenna 16-5 at the center portion of the top plate and the split antennas 16-1 to 16-4 at the peripheral portion of the top plate, as shown in FIG. For example, the capacitance variable capacitor VCe is not provided at the split antenna 16-5 near the central portion of the current supply portion.

Similarly, as shown in Fig. 11, only the parallel resonance capacitor circuit 30-5 connected in parallel with the split antenna 16-5 at the center portion may be referred to as a capacitor-type capacitor C5.

In this way, the current value of the split antenna 16-5 actually flowing through the central portion can be determined from the ratio of the current values flowing through the other split antennas 16-1 to 16-4, and the split antenna for the peripheral portion can be controlled. The distribution current of 16-1~16-4 or the resonance state of each LC circuit or both. Therefore, the number of capacitance variable capacitors can be reduced, and the distribution current based on the current value actually flowing through the split antennas 16-1 to 16-4 or the resonance state of each LC circuit or both can be performed with a simpler configuration. The control of this is the advantage.

In addition, as shown in FIG. 2B, the peripheral portion is divided into eight divided antennas 16-1 to 16-8, and the split antenna 16-9 at the center is combined into a grid of 9×3 in the whole, or In the case where the division of the split antennas 16-1 to 16-25 in the form of a grid of 5 × 5 is performed as shown in Fig. 2C, the capacitors in parallel with the split antenna 16-9 or 16-25 in the center can be similarly applied. As a capacitor-type capacitor, a capacitor connected in parallel with other split antennas is used as a capacitor variable capacitor. Further, in the case where the number is more than 25 and divided into a plurality of sections and the split antenna is provided in the center, the above modification can be applied similarly. In addition, when the divided antennas in which the reference capacitor-type capacitors are connected in parallel are not limited to the center, even if the division is 2 × 2 or 4 × 4, the division is even, and the center is not divided. also may The above modification is applied.

Further, in the above embodiment, the metal window 2 is used for the top plate of the processing chamber 4, but a dielectric window such as a quartz window may be used for the top plate of the processing chamber 4.

When the dielectric windows 2a-1 to 2a-4 are used for the top plate of the processing chamber 4, as shown in Fig. 12, the split antennas 16-1 to 16-4 may use a helical antenna instead of a linear antenna. In the case of a helical antenna, as shown in the circuit diagram of Fig. 13, the split antennas 16-1 to 16-4 are each constituted by one coil L1 to L4. Therefore, the number of antennas becomes smaller as compared with the case where the complex linear antennas are connected in parallel, and the current flowing through the matching circuit 19 becomes small. However, the fact that the split antennas 16-1 to 16-4 are respectively distributed from the high-frequency power source 18 via the matching circuit 19 does not change. Therefore, even if the split antennas 16-1 to 16-4 are each constituted by one spiral antenna, by parallelizing the parallel resonant capacitor circuits 30-1 to 30-4 on the helical antenna, the flow through the matching circuit 19 can be further reduced. The above advantages can be obtained by current. This advantage is gradually increased from "2 × 2 = 4" as in the present embodiment to "3 × 3 = 9", "4 × 4 = 16", and "5 × 5 = 25" as the number of divisions of the split antenna is increased. ...and better.

Further, the dielectric windows 2a-1 to 2a-4 are not placed on the support frame 5 and the support beam 6 via the insulator 10 as shown in FIG.

Further, in particular, although not shown, when the top plate is made of a dielectric window, the dielectric window itself may not be divided.

Thus, the examples shown in Figs. 12 and 13 can be used in combination with the examples shown in Figs. 4 to 11 .

Further, in the present embodiment, the divided antennas divided into four or more are described in detail. However, the present invention is not limited to this. Even in the case of a split antenna of two or three divisions, the same can be applied as long as it is divided into a plurality of divided antennas.

Further, plasma cleaning, etching, CVD film formation, and the like can be given to the plasma treatment by the inductively coupled plasma processing apparatus.

Further, the FPD substrate is used for the substrate to be processed, and the substrate to be processed is also applicable to other substrates such as semiconductor wafers.

16‧‧‧High frequency antenna (plasma generating antenna)

16-1~16-4‧‧‧ Split antenna

18‧‧‧High frequency power supply

19‧‧‧Matching circuit

30-1~30-4‧‧‧Parallel Resonant Capacitor Circuit

C1~C4‧‧‧ capacitor

L1a~L1d,...L4a~L4d‧‧‧linear antenna

Lmatch, C1match, C2match‧‧‧ capacitor

Claims (14)

A high frequency antenna circuit for generating an inductively coupled plasma in a processing chamber of a processing substrate of an inductively coupled plasma processing apparatus; characterized in that: a plasma generating antenna is used to generate plasma in the processing chamber; The power source supplies high frequency power to the plasma generating antenna; the matching circuit is disposed between the high frequency power source and the plasma generating antenna; and the plurality of divided antennas constitute the plasma generating antenna for passing the matching The high frequency power after the circuit is distributed; and the parallel resonant capacitor circuit is disposed in parallel at an individual portion of the plurality of divided antennas. An inductively coupled plasma processing device for generating an inductively coupled plasma in a processing chamber for processing a substrate; characterized in that: a top plate is disposed on an upper portion of the processing chamber; and a plasma generating antenna is disposed on the top plate. The plurality of divided antennas are configured; and the parallel resonant capacitor circuit is disposed in parallel at an individual portion of the plurality of divided antennas. The inductively coupled plasma processing apparatus according to claim 2, wherein the top plate system and the plurality of divided antennas are of the same number and are formed by the divided metal plates. The inductively coupled plasma processing apparatus according to claim 3, wherein the plurality of divided antennas are respectively formed in parallel with a plurality of linear strips corresponding to the divided metal plates. The inductively coupled plasma processing apparatus according to claim 2, wherein the top plate is composed of at least one dielectric plate. The inductively coupled plasma processing apparatus of claim 5, wherein the plurality of split antennas are respectively formed in a spiral shape. The inductively coupled plasma processing apparatus of any one of claims 2 to 6, wherein at least one of the parallel resonant capacitor circuits comprises a capacitor-type capacitor in parallel with the split antenna. The inductively coupled plasma processing apparatus according to any one of claims 2 to 6, wherein at least one of the parallel resonant capacitor circuits includes a resonance in parallel with the split antenna Capacitor variable capacitor for state control. The inductively coupled plasma processing apparatus according to any one of claims 2 to 6, further comprising a variable capacitance type capacitor for distributed current control, which is provided at a current distribution point for distributing a current to the divided antenna, and the division Between the antenna and the connection point on the distribution point side of the parallel resonant capacitor circuit. The inductively coupled plasma processing apparatus according to claim 8, wherein the split antenna includes a split antenna disposed at a central portion of the top plate, and a split antenna disposed at a peripheral portion of the top plate; the resonance state control capacitor may be The variable capacitor is disposed at a split antenna disposed at a peripheral portion of the top plate. The inductively coupled plasma processing apparatus according to claim 9, wherein the split antenna includes a split antenna disposed at a central portion of the top plate, and a split antenna disposed at a peripheral portion of the top plate; the distributed current control capacitor may be The variable capacitor is disposed at a split antenna disposed at a peripheral portion of the top plate. The inductively coupled plasma processing apparatus according to claim 9, wherein the split antenna includes a split antenna disposed at a central portion of the top plate, and a split antenna disposed at a peripheral portion of the top plate; the resonance state control capacitor may be The variable capacitor and the variable capacitance capacitor for distributed current control are provided in a split antenna disposed at a peripheral portion of the top plate. The inductively coupled plasma processing apparatus according to claim 8 is further provided with an ammeter provided between the split antenna and the grounding point; and the monitoring result of the current meter is fed back to the resonant state controlling capacitor. A variable capacitor for controlling a resonance state of the LC circuit including the split antenna and the parallel resonant capacitor circuit. For example, the inductively coupled plasma processing device of claim 9 is further provided with An galvanometer provided between the split antenna and the ground point; the monitoring result of the galvanometer is fed back to the distributed current control capacitor variable capacitor to control the distributed current to the split antenna.