KR101710680B1 - The plasma generating module and the plasma process apparatus having that - Google Patents

Abstract

The present invention relates to a high-frequency power supply device, a high-frequency power supply device, and a method of manufacturing the same. The high-frequency power supply device includes a first high-frequency power supply for supplying a high-frequency power, a first antenna for generating plasma in a process space, A second antenna which is connected in series to the first antenna unit and receives a high frequency power to form a plasma in a process space, and a second antenna which controls the output of the second antenna by varying the impedance, And a second antenna unit including a second resonant capacitor connected to the first antenna and the second antenna, and a plasma processing apparatus including the same.
The use of the plasma generating module and the plasma processing apparatus including the plasma generating module according to the present invention can control the plasma density more precisely because it is possible to divide even one antenna section and to control the output for each section in two or more multiple sections , The power can be transmitted without loss even if the length of the antenna is long, so that the plasma can be generated more uniformly.

Description

TECHNICAL FIELD [0001] The present invention relates to a plasma generating module and a plasma processing apparatus including the plasma generating module.

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a plasma generating module and a plasma processing apparatus including the plasma generating module, and more particularly, to a plasma generating module and a plasma processing apparatus including the plasma generating module.

The plasma processing apparatus refers to an apparatus for processing a substrate using a plasma, and various methods such as vapor deposition, etching, or ion implantation can be used in the substrate processing process.

Such a plasma processing apparatus may be implemented by various methods such as a capacitively coupled plasma generation method, an inductively coupled plasma generation method, an ECR plasma generation method, and a microwave plasma generation method according to a method of generating plasma.

Among these methods, an inductively coupled plasma generation method is a method of generating a plasma by an induction magnetic field by applying a high frequency power to a high frequency antenna. Korean Unexamined Patent Publication No. 131,882 discloses such an inductively coupled plasma generation device. Such an inductively coupled plasma generation method has been widely applied to a large area substrate processing. Recently, a technology using a plurality of antennas has been applied to generate a plasma uniformly according to the position of a large area substrate.

However, in such a plasma processing apparatus, since the effective power can not reach the desired distance due to the wire resistance when the antenna is long, it is difficult to precisely control the plasma because one antenna can not control the output for each section. As a result, .

Korea registered patent No. 131,882

It is an object of the present invention to provide a plasma generating module and a plasma processing apparatus which can solve the problem that the effective power transmitted to the conventional antenna does not reach a desired distance and the output is difficult to control for each section in one antenna section.

According to an aspect of the present invention, there is provided a method of manufacturing a plasma processing apparatus, comprising: a high frequency power supply for supplying a high frequency power; a first antenna for receiving a high frequency power to form a plasma in a process space; A second antenna connected in series to the first antenna unit and receiving a high frequency power to form a plasma in a process space, and a second antenna for varying impedance and controlling an output of the second antenna, There is provided a plasma generating module including a second antenna portion including a second resonant capacitor.

At this time, at least one of connection of the first antenna and the first resonance capacitor and connection of the second antenna and the second resonance capacitor may be connected in parallel.

Furthermore, a plurality of antenna modules including the first antenna unit and the second antenna unit may be provided, and a plurality of antenna modules may be connected in parallel.

The first resonant capacitor and the second resonant capacitor may be constituted by variable capacitors so as to respectively adjust the outputs of the first antenna and the second antenna.

A third antenna connected in series or parallel to the second antenna unit and receiving a high frequency power to form a plasma in the process space, a third resonator connected to the third antenna for controlling the output of the third antenna by varying the impedance, And a third antenna unit including a capacitor.

Also, the first resonant capacitor may be connected to the rear end of the first antenna, and the second resonant capacitor may be connected to the rear end of the second antenna.

The circuit for forming a path through which a part of the current applied to the antenna module flows may further comprise a drain circuit.

Furthermore, the drain circuit may be configured such that one side is connected to a point between the first antenna portion and the second antenna portion, and the other side is grounded, and includes one or more variable elements.

The drain circuit includes a drain variable resistor so that a current to be drained can be controlled.

And a plasma generation module disposed above the stage and generating a plasma in a process space. The plasma generation module includes: a chamber having a processing space formed therein; a stage provided inside the chamber to form a space for seating the substrate; A plasma processing apparatus is provided.

The use of the plasma generating module and the plasma processing apparatus including the plasma generating module according to the present invention can control the plasma density more precisely because the output control can be performed for each section in two or more multiple sections divided in one antenna section , The power can be transmitted without loss even if the length of the antenna is long, so that the plasma can be generated more uniformly.

1 is a cross-sectional view schematically showing a plasma processing apparatus according to the present invention.
2 is a circuit diagram of a plasma generating module according to a first embodiment of the present invention.
3 is a view schematically showing an antenna module portion of the first embodiment
4 is a modification of the antenna module.
5 is another modification of the antenna module.
6 is a view schematically showing a modified antenna module portion.
7 is a circuit diagram showing another modification of the first to third antenna units.

Hereinafter, a plasma generating module and a plasma processing apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the embodiments, the names of the respective components may be referred to as other names in the art. However, if there is a functional similarity and an equivalence thereof, the modified structure can be regarded as an equivalent structure. In addition, reference numerals added to respective components are described for convenience of explanation. However, the contents of the drawings in the drawings in which these symbols are described do not limit the respective components to the ranges within the drawings. Likewise, even if the embodiment in which the structure on the drawing is partially modified is employed, it can be regarded as an equivalent structure if there is functional similarity and uniformity. Further, in view of the level of ordinary skill in the art, if it is recognized as a component to be included, a description thereof will be omitted.

1 is a cross-sectional view schematically showing a plasma processing apparatus according to the present invention.

1 is a cross-sectional view of a plasma processing apparatus according to a first embodiment of the present invention. Here, the plasma processing apparatus means an apparatus applied to a process of generating a plasma by using a process gas to process a substrate, and may be a variety of apparatuses such as a substrate deposition apparatus, a substrate etching apparatus, and an ion implantation apparatus.

Although FIG. 1 shows a plasma processing apparatus having a structure adapted to a cluster type, it is noted that the present invention is not limited to this and can be applied to a plasma processing apparatus applied to an in-line type.

1, the plasma processing apparatus according to the present embodiment may include a chamber 10, a stage 40, an antenna mounting unit 20, and a plasma generating module 100.

First, the chamber 10 is formed in a closed structure surrounded by a plurality of wall surfaces, and constitutes the body of the plasma processing apparatus. The interior of the chamber 10 may include a processing space 30 in which a substrate is accommodated and a substrate processing process is performed and an antenna mounting unit 20 in which a plasma generating module 100 to be described later is installed. 1, the antenna mount 20 is disposed on the upper side of the chamber 10, and the process space 30 can be located on the lower side of the antenna mount 20.

Although not shown in FIG. 1, a gate valve (not shown) may be formed at one side of the chamber 10 to allow the substrate to flow in and out. The process gas used in the substrate processing process is supplied to the process space inside the chamber A gas supply unit (not shown) and a gas exhaust unit (not shown) for exhausting the gas to the outside may be provided.

On the other hand, a stage 40 is provided inside the process space 30. As shown in Fig. 1, the stage 40 is configured to support the substrate S, and the substrate S can be processed while being placed on the stage 40. Fig. A bias electrode 50 connected to an external RF power source unit 60 may be formed on the stage 40 to control the distribution of the plasma formed on the process space 30. 1, a temperature adjusting member such as a heater (not shown) may be provided inside the stage 40 to adjust the temperature of the substrate during the substrate processing process.

As described above, the antenna mounting part 20 is provided on the upper side of the stage 40, and forms a space in which the plasma generating module 100 is installed. The antenna mounting portion 20 forms a space defined by at least one window from the process space. The window 21 can be supported by a support member 22 provided on the wall surface of the chamber. The window 21 may be formed of a metal material or may be formed of a dielectric material other than a metal material.

The plasma generation module 100 is a structure for generating an induction electric field inside the process space to generate plasma from the process gas in the process space. The plasma generating module 100 may include a high frequency power source 110, a matching unit 120, an antenna module 200, and a drain circuit 300. At this time, the RF power supply 110 and the matching unit 120 may be installed outside the chamber 10, and the antenna module 200 and the drain circuit 300 may be installed in the antenna mounting unit 20.

Hereinafter, the plasma generating module 100 will be described in detail with reference to FIG. 2 to FIG.

2 is a circuit diagram of a plasma generating module according to a first embodiment of the present invention. As described above, the plasma generating module may include a high frequency power source 110, a matching unit 120, an antenna module 200, and a drain circuit 300.

The RF power supply 110 generates radiofrequency power and provides it to a plurality of antenna modules 200. The matching unit 120 is provided between the RF power supply 110 and the plurality of antennas 130 and can perform impedance matching between the RF power supply 110 and the antenna 130. The matching unit 120 is composed of a circuit including a variable capacitor or a variable inductor, and performs impedance matching in such a manner as to control the variable capacitor or the variable inductor. However, since the configuration of the high-frequency power source 110 and the matching unit 120 is widely applied, a detailed description thereof will be omitted.

The antenna module 200 includes a first antenna unit 210 and a second antenna unit 220. The antenna module 200 includes a plurality of antenna units 210 for processing large areas and is regularly arranged in divided unit areas of the antenna mounting unit . The plurality of antenna modules 200 may be connected to each other in parallel so as to generate a uniform plasma in the process space 30 corresponding to a plurality of unit areas.

The first antenna unit 210 and the second antenna unit 220 are connected in series and the drain circuit 300 is connected to a point between the first antenna unit 210 and the second antenna unit 220 .

The first antenna unit 210 may include a first antenna 211 and a first resonance capacitor 212. The first antenna 211 is composed of a conductor member to receive a high-frequency power and form a plasma in the process space. The first resonant capacitor 212 may be connected in parallel with the first antenna 211 to amplify the output of the first antenna 211 due to a resonance phenomenon connected to the first antenna 211.

의 조건을 만족할 때, 공진회로의 임피던스 값이 직렬 공진인 경우 최소가 되며, 병렬 공진인 경우 최대가 된다. 직렬공진의 경우 회로에 흐르는 전류가 최대가 되며, 병렬공진의 경우 루프 내부에 흐르는 전류가 최대가 되어 결국 큰 출력을 낼 수 있게 된다. 전술한 식을 만족하는 주파수를 공진주파수라고 하며, L과 C의 관계가 공진주파수와 유사한 값을 갖는 경우에도 공진이 일어날 수 있다. 공진현상을 이용하면 증폭된 전류를 이용할 수 있으므로, 적은 RF파워를 인가하더라도 높은 출력을 얻을 수 있게 된다.The frequency of the RF power is w and the inductance value of the first antenna 211 is L and the capacitance of the first resonant capacitor 212 is L. In this case, ) When the value is C,

, The impedance value of the resonance circuit becomes minimum when the resonance circuit is a series resonance, and becomes the maximum when the impedance is parallel resonance. In the case of series resonance, the current flowing in the circuit becomes the maximum, and in the case of parallel resonance, the current flowing in the loop becomes maximum, so that a large output can be obtained. Resonance may occur even when the frequency satisfying the above-described expression is referred to as a resonance frequency and the relationship between L and C has a value similar to the resonance frequency. The use of the resonance phenomenon allows the amplified current to be used, so that even if less RF power is applied, high output can be obtained.

The inductance value L of the first antenna 211 or a second antenna 221 to be described later is determined by the electrical characteristics such as the shape and the material of the antenna. In general, the inductance value L of the antenna is a fixed value And the first resonant capacitor 212 may be constituted by a variable capacitor so that the output amplified by varying the impedance and using the resonance phenomenon described above can be controlled.

The second antenna unit 220 may include a second antenna 221 and a second resonant capacitor 222. The first antenna 211 is composed of a conductor member to receive a high-frequency power and form a plasma in the process space. The second resonant capacitor 222 may be connected in parallel with the second antenna 221 so as to amplify the output of the second antenna 221 due to a resonance phenomenon caused by the interaction with the second antenna 221. The second antenna 221 may be a variable capacitor for adjusting the output of the second antenna 221 by varying the impedance. Meanwhile, each of the antennas 211 and 221 may be a resistor, so that the output can be controlled by reflecting the same.

Meanwhile, a current measuring unit (not shown) may be connected to the rear end of each of the antennas 211 and 221 to measure the amount of current applied to the antenna and to control the variable capacitors 212 and 222.

The drain circuit 300 is configured to form a path for draining a part of the current applied to the antenna module 200. When the current needs to be differently applied to each antenna unit according to the user's need, for example, when the etching rate of each part is differently applied, the current is drained, In order to minimize the effect on the image quality.

Specifically, the drain circuit 300 may include at least one variable element. In this embodiment, the drain variable resistor 310 and the drain capacitor 320 are connected in series. One end of the drain circuit 300 is connected to a point between the first antenna unit 210 and the second antenna unit 220 and the other end is connected to the ground unit to partially receive the current applied to the antenna module 200 Drain. This configuration is operated in order to keep the RF power consumed by one antenna unit constant when the current amplified by each of the antennas 211 and 221 is changed. That is, when the current amplified by the first antenna unit 210 is increased, the drain circuit 300 decreases the value of the drain variable resistor 310 to increase the amount of current to be drained to be applied to the second antenna unit 220 The amount of current can be kept constant. That is, when controlling the output of the first antenna unit 210 and the second antenna unit 220, the drain circuit 300 compensates for the increase / decrease of the applied current by adjusting the drain amount in the drain circuit 300 It is possible to minimize the influence on other antenna portions, so that it becomes easy to individually control the outputs of the respective antenna portions.

Hereinafter, the shape and arrangement of the antenna module 200 of the first embodiment will be described with reference to FIG.

3 is a view schematically showing a portion of the antenna module 200 of the first embodiment.

The illustrated portion shows an antenna module 200 installed in one unit area of the plurality of divided antenna mounting portions 20. As shown in the figure, the antenna module 200 can be arranged in a spiral shape by being wound on the plane of the divided unit area outward from the center, and includes a first antenna unit 210, a first antenna unit 210, And a second antenna unit 220 connected in series.

Specifically, the first antenna 211 of the first antenna unit 210 is arranged in a square spiral shape, and the first resonance capacitor 212 is connected to both ends of the first antenna 211. The second antenna 211 of the second antenna unit 220 is disposed outside the first antenna 211 and the second resonant capacitor 212 is connected to both ends of the second antenna 221. The front end of the second antenna unit 220 is connected to the rear end of the first antenna unit 210 and the rear end of the second antenna unit 220 is connected to the ground line. The drain circuit 300 is connected to a point between the first antenna unit 210 and the second antenna unit 220, and the other end is connected to the ground line.

Since the antenna module 200 is provided with the first antenna 211 and the second antenna 221 divided into one antenna line and the resonance capacitors 212 and 222 are provided in the antenna module 200, The amount of current applied to the electrodes 211 and 221 can be differently applied. Therefore, it is possible to finely control the plasma generated in the process space 30 corresponding thereto in the unit area.

Hereinafter, another embodiment of the plasma generating module will be described with reference to FIGS. 4 to 6. FIG. Modifications described below may be configured to include the same components as those of the first embodiment described above, and a description thereof will be omitted in order to avoid redundant description.

4 is a view schematically showing a modified example of the antenna module 200 according to the present invention.

The antenna module 200 of the plasma generating module 100 according to the present invention includes a first antenna unit 210 and a second antenna unit 220 connected in series with the first antenna unit 210 . 4A, the first antenna 211 and the first resonant capacitor 212 constituting the first antenna unit 210 may be connected in series. In such a configuration, the first antenna unit 210 can amplify the output of the first antenna 211 by using the series resonance. 4 (b), the second antenna 221 and the second resonant capacitor 222 constituting the second antenna unit 220 are connected in series, and the second antenna 221 and the second resonant capacitor 222 are connected in series, To amplify the output of the amplifier. In this way, the resonance modes of the antenna units 210 and 220 may be appropriately changed in parallel with the series to have a desired output value.

Fig. 5 shows another modification of the antenna module 200. Fig.

4, the first antenna unit 210 and the second antenna unit 220 can be configured as shown in FIG. 4, and (a) and (b) A drain circuit 300 may be connected between the antenna unit 210 and the second antenna unit 220. The effect is the same as when the drain circuit 300 of the first embodiment described above is provided.

6 is a view schematically showing a modification of the antenna module 200 according to the present invention.

As shown in the figure, the antenna module 200 is disposed in the unit area of the antenna mounting part. The antenna is divided into four sections, each section being connected in parallel with the resonant capacitor. Since a plurality of antenna units are connected in series and are installed in one divided region, a minute current can be adjusted for each antenna, and the amount of current applied to each antenna can be changed according to the length of the capacitor. That is, it is possible to control the output for each section within the divided area.

Also, when the antenna is to be installed long, a plurality of antenna portions are provided, and parallel resonance is used in each antenna portion, so that it is possible to transmit a long distance without power loss. However, such a configuration is only an example, and the number, shape, arrangement, and the like of the antennas can be variously modified.

7 is a circuit diagram showing another modified example of the first antenna unit 210 to the third antenna unit 230. FIG. In this modified example, the same constituent elements as those of the above-described embodiment can be included, and a description thereof will be omitted in order to avoid redundant description.

As shown in the figure, a third antenna unit 230 may be connected to the second antenna unit 220.

The third antenna unit 230 is connected in parallel to the second antenna unit 220 as shown in FIGS. 7 (a) and 7 (b) to form a path through which a part of current is drained. Further, it can be configured to generate a plasma in the process space 30 by receiving a current.

The third antenna unit 230 includes a third antenna 231 and a third resonant capacitor 232 and the third resonant capacitor 232 can vary the impedance to control the output of the third antenna 231 . The third antenna 231 and the third resonant capacitor 232 may be connected to each other in series as shown in FIG. 7 (a), and may be connected in parallel as shown in FIG. 7 (b). At this time, the output can be amplified by using the resonance phenomenon in the third antenna 231. On the other hand, the contents related to such a resonance phenomenon have been described above.

7 (c) and 7 (d) show the configuration of the third antenna unit 230 connected in series with the second antenna unit 220. In this manner, the second antenna unit 220 and the third antenna unit 230 may be connected in series.

The third antenna 231 and the third resonant capacitor 232 may be connected in series as shown in FIG. 7 (c) and may be connected in parallel as shown in FIG. 7 (d).

Although not shown, a plurality of third antenna units 230 may be provided and connected in series and in parallel with the second antenna unit 220. A drain circuit 300 may be additionally provided between the antenna units As shown in FIG.

By using the plasma generation module and the plasma processing apparatus including the plasma generation module, it is possible to divide one antenna section into two or more multiple sections, and to control output of each individual section to control the plasma density more precisely There is an effect that can be. In addition, since the series resonance is used for each section, the power loss can be minimized even if the antenna has a long length, and the power can be transmitted to generate plasma more uniformly.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, . Therefore, it should be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

110: RF power supply 120: Impedance matching box
200: Antenna module
210: first antenna unit 211: first antenna 212: first resonance capacitor
220: second antenna unit 221: second antenna 222: second resonant capacitor
230: third antenna section 231: third antenna 232: third resonance capacitor
300: drain circuit 3 10: drain variable resistor 320: drain capacitor

Claims (11)

A high frequency power supply for supplying high frequency power;
A first antenna for receiving a high frequency power to form a plasma in a process space, and a first resonance capacitor for controlling an output of the first antenna and varying an impedance to be connected to the first antenna, ; And
A second antenna connected in series with the first antenna unit and receiving the RF power to form a plasma in a process space, and a second antenna for controlling an output of the second antenna by varying an impedance, And a second antenna portion including a resonance capacitor,
The first antenna and the second antenna are installed together in a divided unit area of the antenna mounting part,
Wherein the first resonant capacitor and the second resonant capacitor are independently controlled so as to partially change an output within the unit region. The method according to claim 1,
Wherein at least one of a connection between the first antenna and the first resonant capacitor and a connection between the second antenna and the second resonant capacitor is a parallel connection. 3. The method of claim 2,
A second antenna unit connected in series or in parallel,
A third antenna for receiving a high frequency power and forming a plasma in a process space, and a third antenna unit including a third resonant capacitor for controlling an output of the third antenna by varying an impedance and being connected to the third antenna And a plasma generation module. 3. The method of claim 2,
Further comprising a drain circuit forming a path through which a part of the current applied to the first antenna or the second antenna is drained. 5. The method of claim 4,
Wherein the drain circuit comprises:
One side of which is connected to a point between the first antenna portion and the second antenna portion,
And the other side is grounded. 6. The method of claim 5,
Wherein the drain circuit includes at least one variable element so that a current to be drained can be adjusted. The method according to claim 6,
And the drain circuit includes a drain variable resistor. A chamber in which a process space is formed;
A stage provided inside the chamber to form a space in which the substrate is seated; And
And a plasma generation module disposed on the stage and generating a plasma in the process space,
The plasma generation module includes:
A high frequency power supply for supplying a high frequency power, a first antenna for receiving the high frequency power and forming a plasma in a process space, and a first resonance capacitor for amplifying an output of the first antenna and connected to the first antenna A second antenna connected in series to the first antenna unit and receiving the RF power to form a plasma in a process space, and a second antenna connected to the second antenna for amplifying an output of the second antenna, And a second antenna portion including a second resonant capacitor,
The first antenna and the second antenna are installed together in a divided unit area of the antenna mounting part,
Wherein the first resonant capacitor and the second resonant capacitor are independently controlled so as to partially change an output within the unit region. 9. The method of claim 8,
Wherein at least one of a connection between the first antenna and the first resonant capacitor and a connection between the second antenna and the second resonant capacitor is a parallel connection. 10. The method of claim 9,
Wherein the first resonance capacitor and the second resonance capacitor are constituted by variable capacitors so as to respectively adjust the outputs of the first antenna and the second antenna. 10. The method of claim 9,
Wherein the circuit forming a path through which a part of the current applied to the first antenna unit or the second antenna unit flows includes a drain circuit.

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