TW201336951A - Thermal conductive adhesive composition, and adhesive sheet and thermal conductive dicing and die attach film using the same - Google Patents
Thermal conductive adhesive composition, and adhesive sheet and thermal conductive dicing and die attach film using the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
- H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
- H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
- H01L2021/6015—Applying energy, e.g. for the soldering or alloying process using conduction, e.g. chuck heater, thermocompression
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60277—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the use of conductive adhesives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
Description
本發明關於一種導熱性接著劑組成物,其係可使用於半導體裝置之製造,尤其適合使用於樹脂模製型的半導體封裝,高導熱率且散熱特性優異、對於被著體的矽與阻焊劑,具有強接著力,及使用其之接著用薄片與導熱性切割/固晶薄膜。 The present invention relates to a thermally conductive adhesive composition which can be used for the manufacture of a semiconductor device, and is particularly suitable for use in a resin molded semiconductor package, which has high thermal conductivity and excellent heat dissipation characteristics, and is suitable for the beryllium and solder resist of the object. , with strong adhesion, and the use of the subsequent sheet and thermal cut / solid crystal film.
半導體裝置之製造步驟,是藉由將形成了IC電路的大直徑的矽晶圓在切割(切斷)步驟切成半導體晶片,以硬化性液狀接著劑(固晶材)等熱壓接而接著固定(mount)在導線框架,進行電極間的焊線之後,為了操作性或隔離外部環境保護而將其密封來製造。此密封的形態有金屬密封或陶瓷密封等的氣密密封型,以及利用了樹脂的非氣密密封型,而後者藉由樹脂進行的轉移模製法,其量產性優異並且低價,目前最為廣泛使用。此樹脂模製封裝雖然有前述優點,但相反地會有耐濕‧耐熱性、熱應力緩和性、散熱性等較差的缺點。 In the manufacturing process of the semiconductor device, a large-diameter germanium wafer on which an IC circuit is formed is cut into a semiconductor wafer in a cutting (cutting) step, and is thermocompression-bonded by a curable liquid adhesive (solid crystal material) or the like. Then, after mounting on the lead frame and performing bonding between the electrodes, it is sealed by sealing it for operability or isolation of external environmental protection. The seal is in the form of a hermetic seal such as a metal seal or a ceramic seal, and a non-hermetic seal type using a resin, and the latter is a transfer molding method by a resin, which is excellent in mass productivity and low in price. widely used. Although the resin molded package has the above-described advantages, it is disadvantageous in that it is inferior in moisture resistance, heat resistance, thermal stress relaxation, heat dissipation, and the like.
另外,近年來電器用品、電子機械的小型化和多機能化,電子零件隨之而高機能化,由於這樣的需求,半導體裝置的配線也發展得更微細化和高密度化,因為半導體晶片的大型化,以及因為具有與不具導線框架的面陣列接合型晶片相同尺寸的構造(CSP)或層合了晶片的構造 (Stacked CSP、Sip)的半導體裝置的出現,該等在封裝(PKG)時遇到的熱衝撃(應力)情況也逐漸變得嚴苛。 In addition, in recent years, miniaturization and multi-functionalization of electrical appliances and electronic machinery, electronic components have become highly functional, and the wiring of semiconductor devices has also been developed to be more refined and denser due to such demands, because of semiconductor wafers. Large size, and because of the same size configuration (CSP) or laminated wafer structure as the face array bonded wafer without the lead frame The emergence of semiconductor devices (Stacked CSP, Sip), the thermal stress (stress) encountered in the package (PKG) is also becoming more stringent.
再者,在將這些半導體裝置安裝至印刷電路板的實裝程序步驟之中,對應於無鉛焊料的耐迴焊性也需達到高溫(265℃),條件逐漸變得嚴苛。因此,所使用的材料逐漸要求能夠最適化以及高性能化。特別是在封裝構成材料之中,為了能夠將固晶材的特性控制在比較的廣範圍以容易符合這些要求,因此固晶材逐漸需要具有可對應於嚴苛的熱衝撃(應力)的低彈性率,並且為高接著性、高耐熱性材料。 Further, in the mounting procedure of mounting these semiconductor devices to the printed circuit board, the reflow resistance corresponding to the lead-free solder also needs to reach a high temperature (265 ° C), and the conditions become increasingly severe. Therefore, the materials used are increasingly required to be optimized and high performance. In particular, among the package constituent materials, in order to be able to control the characteristics of the solid crystal material within a relatively wide range to easily meet these requirements, the solid crystal material is required to have low elasticity which can correspond to severe thermal stress (stress). Rate, and is a high adhesion, high heat resistance material.
另外,安裝半導體晶片的支持基板也需要微細化,在安裝半導體晶片時,液狀接著劑由晶片端滲出,造成電極的污染或接著層的厚度不均勻造成晶片的傾斜,而使得焊線出現不良狀況,因此希望有能夠改善這些缺點的接著劑的薄膜化。 In addition, the supporting substrate on which the semiconductor wafer is mounted also needs to be miniaturized. When the semiconductor wafer is mounted, the liquid adhesive oozes from the wafer end, causing contamination of the electrode or uneven thickness of the bonding layer to cause tilting of the wafer, resulting in poor bonding of the bonding wire. In view of the situation, it is desirable to have a thin film of an adhesive capable of improving these disadvantages.
關於這樣的接著劑,以往開發出了在耐熱性優異的樹脂的聚醯亞胺或聚醯胺醯亞胺導入矽氧烷構造的低彈性率材料。在專利文獻1、2等中皆提出了矽氧烷變性聚醯胺醯亞胺,然而低彈性化及對於被著體的接著性不足。 In such an adhesive, a low modulus material having a structure in which a polyimine or a polyamidoximine which is excellent in heat resistance is introduced into a siloxane structure has been developed. In the patent documents 1, 2 and the like, a decane-denatured polyamidoquinone imine is proposed, but the low elasticity and the adhesion to the object are insufficient.
在專利文獻3中提出了在矽氧烷變性聚醯胺醯亞胺中摻合具有2個以上的馬來醯亞胺基的化合物來改良高溫特性,然而此樹脂組成物的接著力較差。 Patent Document 3 proposes to blend a compound having two or more maleimine groups in a decane-modified polyamidoximine to improve high-temperature characteristics, but the resin composition has poor adhesion.
另外,在專利文獻4及5中提出了由接著性、低彈性及耐熱性優異的聚醯亞胺聚矽氧與環氧樹脂所構成之耐熱 性接著薄膜,雖然接著力得以改善,然而並未充分低彈性化。 Further, in Patent Documents 4 and 5, heat resistance composed of polythene oxide polyether and epoxy resin excellent in adhesion, low elasticity, and heat resistance is proposed. The film followed by the film, although the adhesion was improved, was not sufficiently low in elasticity.
[專利文獻1]日本特開平3-189127號公報 [Patent Document 1] Japanese Patent Laid-Open No. 3-189127
[專利文獻2]日本特開平4-264003號公報 [Patent Document 2] Japanese Patent Laid-Open No. Hei 4-264003
[專利文獻3]日本特開平10-60111號公報 [Patent Document 3] Japanese Patent Laid-Open No. Hei 10-60111
[專利文獻4]日本特開平7-224259號公報 [Patent Document 4] Japanese Patent Laid-Open No. Hei 7-224259
[專利文獻5]日本特開平8-27427號公報 [Patent Document 5] Japanese Patent Laid-Open No. Hei 8-27427
[專利文獻6]日本特開2003-193016號公報 [Patent Document 6] Japanese Patent Laid-Open Publication No. 2003-193016
近年來,由於半導體晶片的微細化以及高速切換(亦即高速運作),每單元面積的產生熱量有增加的傾向,為了有效率地排熱,導熱率高的半導體用接著薄膜逐漸成為市場的需求。 In recent years, due to the miniaturization of semiconductor wafers and high-speed switching (that is, high-speed operation), the amount of heat generated per unit area tends to increase, and in order to efficiently dissipate heat, a semiconductor-attached film having a high thermal conductivity is gradually becoming a market demand. .
單純為了增加導熱率而添加高導熱率的填料的組成物非常脆弱,無法加工成薄膜,而為不實用的組成物。另外,若為了提升薄膜的加工性而大量添加低黏度成分,則在吸濕前後,接著力降低,作為半導體封裝的信賴性降低。 A composition in which a filler having a high thermal conductivity is added simply to increase the thermal conductivity is very fragile and cannot be processed into a film, and is an unpractical composition. Further, when a low-viscosity component is added in a large amount in order to improve the processability of the film, the force is lowered before and after moisture absorption, and the reliability as a semiconductor package is lowered.
本發明鑑於上述狀況而完成,目的是為了解決上述缺 點而提供一種導熱性接著劑組成物,其係高導熱率且散熱特性優異、接著性良好,且耐濕測試後的信賴性優異;及使用其之接著用薄片與導熱性切割/固晶薄膜。 The present invention has been made in view of the above circumstances, and the object is to solve the above-mentioned shortcomings. Provided is a thermally conductive adhesive composition which has high thermal conductivity, excellent heat dissipation characteristics, good adhesion, and excellent reliability after moisture resistance test; and a subsequent use of a sheet and a thermally conductive cut/solid crystal film .
本發明人為了達成上述目的潛心進行檢討的結果,發現對於導熱性填料的表面以特定的聚矽氧化合物實施處理是有效的,以至完成了本發明。 As a result of intensive review in order to achieve the above object, the present inventors have found that it is effective to treat a surface of a thermally conductive filler with a specific polyoxynitride, and the present invention has been completed.
亦即,第一,本發明提供一種導熱性接著劑組成物,其係含有下述(A)~(C)成分: That is, first, the present invention provides a thermally conductive adhesive composition comprising the following components (A) to (C):
(A)在聚合物骨架中具有可與環氧樹脂反應的官能基之聚合物100質量份 (A) 100 parts by mass of a polymer having a functional group reactive with an epoxy resin in a polymer skeleton
(B)一分子中具有至少2個環氧基之環氧樹脂50~400質量份 (B) 50 to 400 parts by mass of an epoxy resin having at least 2 epoxy groups in one molecule
(C)以下述平均組成式(1)所表示之數量平均分子量500~10000之聚矽氧化合物實施表面處理且導熱率為10 W/mK以上之無機填充劑1000~4000質量份 (C) 1000 to 4000 parts by mass of an inorganic filler having a surface treatment of a polyfluorene oxide compound having a number average molecular weight of 500 to 10,000 represented by the following average composition formula (1) and having a thermal conductivity of 10 W/mK or more
(HR1SiO)a(R2 2SiO1/2)b(R3 2SiO)c(R4SiO3/2)d (1)(式中,R1~R4各自獨立,表示不具有脂肪族不飽和鍵的非取代或取代之1價烴基,a為0.1~0.7之正數、b為0.01~0.2之正數、c為0~0.9之數、d為0~0.2之數,惟,滿足a+b+c+d=1)。 (HR 1 SiO) a (R 2 2 SiO 1/2 ) b (R 3 2 SiO) c (R 4 SiO 3/2 ) d (1) (wherein R 1 to R 4 are each independently, indicating that they do not have An unsubstituted or substituted monovalent hydrocarbon group of an aliphatic unsaturated bond, a is a positive number of 0.1 to 0.7, b is a positive number of 0.01 to 0.2, c is a number of 0 to 0.9, and d is a number of 0 to 0.2, but satisfies a+b+c+d=1).
第二,本發明提供一種接著用薄片,其係具備:基材及設置於該基材上由上述導熱性接著劑組成物所構成之接 著劑層。 Secondly, the present invention provides a sheet for subsequent use, comprising: a substrate; and a substrate formed on the substrate and composed of the thermally conductive adhesive composition The layer of the agent.
第三,本發明提供一種導熱性切割/固晶薄膜,其係具備:具有基材與設置於其上之接著劑層之切割薄膜,及設置於該切割薄膜之黏著劑層上由上述導熱性接著劑組成物所構成之接著劑層。 Thirdly, the present invention provides a thermally conductive dicing/solid-state film comprising: a dicing film having a substrate and an adhesive layer disposed thereon, and the thermal conductivity provided on the adhesive layer of the dicing film The adhesive layer formed by the composition of the subsequent composition.
本發明之接著劑組成物為高導熱率,且散熱特性優異、與被著體的接著性優異。藉由使用本發明之接著劑組成物之接著用薄片與導熱性切割/固晶薄膜,可製造出高信賴性的樹脂封裝半導體裝置。 The adhesive composition of the present invention has high thermal conductivity, is excellent in heat dissipation characteristics, and is excellent in adhesion to a subject. By using the subsequent sheet and the thermally conductive cut/solid crystal film of the adhesive composition of the present invention, a highly reliable resin-packaged semiconductor device can be manufactured.
以下針對本發明進一步作詳細說明。此外在本說明書之中,重量平均分子量及數量平均分子量分別是指採用下述條件藉由凝膠滲透層析(GPC)測得的以聚苯乙烯作為標準物質的重量平均分子量及數量平均分子量。 The invention is further described in detail below. Further, in the present specification, the weight average molecular weight and the number average molecular weight respectively refer to a weight average molecular weight and a number average molecular weight of polystyrene as a standard substance measured by gel permeation chromatography (GPC) under the following conditions.
展開溶劑:四氫呋喃(THE) Developing solvent: tetrahydrofuran (THE)
流量:1mL/min. Flow rate: 1mL/min.
裝置:HLC-8320GPC(商品名,東曹公司製) Device: HLC-8320GPC (trade name, manufactured by Tosoh Corporation)
偵測器:示差折射率偵測器(RI) Detector: Differential Refractive Index Detector (RI)
管柱:TSKgel GMHXL-L+TSKgel G4000HXL+TSKgel G2000HXL+TSK gel G2000HXL(商品名,東曹公司製) Column: TSKgel GMH XL -L+TSKgel G4000H XL +TSKgel G2000H XL +TSK gel G2000H XL (trade name, manufactured by Tosoh Corporation)
管柱溫度:40℃ Column temperature: 40 ° C
試樣注入量:100μL(濃度0.5質量%之THF溶液) Sample injection amount: 100 μL (concentration 0.5% by mass of THF solution)
本發明之接著劑組成物係含有(A)~(C)成分,在常溫可保持形狀,形成薄片狀薄膜,可藉由加熱經過可塑狀態而硬化,且對於被著體表現出優異的接著性。本發明之接著劑組成物之硬化物的導熱性優異。使用具備由本發明之接著劑組成物所構成之接著劑層的導熱性切割/固晶薄膜所製造的半導體封裝,其信賴性優異。 The adhesive composition of the present invention contains the components (A) to (C), and can maintain a shape at a normal temperature to form a flaky film which can be hardened by heating in a plastic state and exhibits excellent adhesion to the object. . The cured product of the adhesive composition of the present invention is excellent in thermal conductivity. A semiconductor package manufactured using a thermally conductive dicing/solid crystal film having an adhesive layer composed of the adhesive composition of the present invention is excellent in reliability.
本發明之接著劑組成物必須在聚合物骨架中具有可與環氧樹脂反應的官能基之聚合物的理由如以下所述。實驗判明了在固晶時,為了使接著薄膜與基板之間成為空隙少的狀態,接著薄膜必須在130~170℃中至少1點的剪切黏度在1×103~1×105Pa‧s的範圍。為了將前述剪切黏度維持在既定範圍,在構成接著薄膜的組成物中必須含有黏度高於單體的聚合物成分。(A)成分可單獨使用1種或併用2種以上。另外,為了在與組成物中所含有的環氧樹脂之間製作堅固的基體(matrix),有必要具有可與環氧樹脂反應的官能基。 The reason why the adhesive composition of the present invention must have a polymer having a functional group reactive with an epoxy resin in a polymer skeleton is as follows. In the experiment, it was found that in the state of solid crystal, in order to make the gap between the film and the substrate small, the film must have a shear viscosity of at least 1 point at 130 to 170 ° C of 1 × 10 3 to 1 × 10 5 Pa‧ The scope of s. In order to maintain the aforementioned shear viscosity within a predetermined range, it is necessary to contain a polymer component having a higher viscosity than the monomer in the composition constituting the adhesive film. The component (A) may be used alone or in combination of two or more. Further, in order to form a strong matrix between the epoxy resin contained in the composition, it is necessary to have a functional group reactive with the epoxy resin.
(A)成分之聚合物之Tg係以40℃以上為佳。在使用Tg為40℃以上的聚合物成分製作出接著薄膜,並將該 接著薄膜加工成切割固晶薄膜的情況,該接著薄膜對於切割薄膜的沾黏性不會變得過強,而不易堅固地貼附於切割薄膜,容易在短時間內將該接著薄膜由切割薄膜剝離,因此半導體裝置製作的生產效率容易提升。 The Tg of the polymer of the component (A) is preferably 40 ° C or higher. Making a bonding film using a polymer component having a Tg of 40 ° C or higher, and Then, the film is processed into a film for cutting the solid crystal film, and the adhesive film does not become too strong for the dicing film, and is not easily adhered to the dicing film, and the film is easily cut into a film in a short time. Since the peeling is performed, the production efficiency of the semiconductor device fabrication is easily improved.
(A)成分中之、可與環氧樹脂反應的官能基可列舉例如選自羧基、胺基、亞胺基、環氧基、酚性羥基、及硫醇基所構成之群中之至少1種官能基。 The functional group reactive with the epoxy resin in the component (A) may, for example, be at least 1 selected from the group consisting of a carboxyl group, an amine group, an imine group, an epoxy group, a phenolic hydroxyl group, and a thiol group. a functional group.
(A)成分之聚合物以聚苯乙烯換算的重量平均分子量宜為10,000~200,000,較佳為20,000~100,000,更佳為30,000~80,000。若重量平均分子量在前述範圍內,則容易由所得到的組成物形成塗膜,並且也容易得到適合於填補具有微細電路圖型的基板表面的凹凸而具有充足柔軟度的接著薄膜。 The weight average molecular weight of the polymer of the component (A) in terms of polystyrene is preferably 10,000 to 200,000, preferably 20,000 to 100,000, more preferably 30,000 to 80,000. When the weight average molecular weight is within the above range, it is easy to form a coating film from the obtained composition, and it is also easy to obtain an adhesive film which is suitable for filling the unevenness of the surface of the substrate having a fine circuit pattern and having sufficient flexibility.
(A)成分之聚合物可列舉聚醯亞胺樹脂。(A)成分之聚合物亦可採用聚醯亞胺樹脂之前驅物的聚醯胺酸,然而會有在固晶步驟的加熱硬化時,因為醯亞胺化(脫水閉環)而副生成水,而發生接著面的剝離等的情形,因此以使用預先醯亞胺化(脫水閉環)的聚醯亞胺樹脂為佳。聚醯胺酸可列舉例如下述一般式(1)所表示之物質。聚醯亞胺樹脂可列舉例如下述一般式(2)所表示之物質。聚醯胺酸及聚醯亞胺樹脂亦可含有二有機聚矽氧烷鍵結,另外,從接著性這點看來,以骨架中具有酚性羥基為佳。 The polymer of the component (A) is exemplified by a polyimide resin. The polymer of the component (A) may also be a poly-proline which is a precursor of the polyimide resin. However, in the case of heat hardening in the solid phase step, water is formed by the imidization (dehydration ring closure). In the case where peeling of the adhesion surface occurs, etc., it is preferable to use a polyimine resin which is preliminarily imidized (dehydration ring closure). Examples of the polyamic acid include those represented by the following general formula (1). The polyimine resin may, for example, be a substance represented by the following general formula (2). The polyaminic acid and the polyimine resin may also contain a diorganopolyoxyalkylene bond, and it is preferred from the viewpoint of adhesion to have a phenolic hydroxyl group in the skeleton.
在上述一般式(1)之中,q為1~300之整數,宜為2~300之整數,尤其是5~300之整數,而具有這種重覆數的聚醯胺酸可藉由下述方法輕易地得到。另外,上述一般式(2)所表示之聚醯亞胺樹脂可藉由常法使上述一般式(1)所表示之聚醯胺酸脫水、閉環而得到。 In the above general formula (1), q is an integer from 1 to 300, preferably an integer from 2 to 300, especially an integer from 5 to 300, and the polyamine having such a repeat number can be used The method is easily obtained. Further, the polyimine resin represented by the above general formula (2) can be obtained by dehydrating and ring-closing the polyamic acid represented by the above general formula (1) by a usual method.
一般式(1)所表示之聚醯胺酸,可藉由使下述構造式(3)所表示之四羧酸二酐與下述構造式(4)所表示之二胺依照常法以大致等莫耳的比例在有機溶劑中反應而得到,
H2N-Y-NH2 (4)(但是,Y表示與上述同樣的意思)。 H 2 NY-NH 2 (4) (however, Y represents the same meaning as described above).
此處,若具體地例示上述式(3)所表示之四羧酸二酐,則可列舉下述的物質,然而並不受該等所限定。 Here, specific examples of the tetracarboxylic dianhydride represented by the above formula (3) include the following, but are not limited thereto.
此外,該等上述式(3)所表示之四羧酸二酐依照希望可使用1種或2種以上。 In addition, one or two or more kinds of the tetracarboxylic dianhydrides represented by the above formula (3) may be used.
上述式(4)所表示之二胺之中,宜為1~80莫耳%、更佳為1~60莫耳%,而從對有機溶劑的溶解性、對於被著體的接著性、低彈性、柔軟性這點看來,希望為下述構造式(5)所表示之二胺基矽氧烷化合物,
在一般式(5)所表示之矽氧烷二胺(或α,ω-二胺基聚矽氧烷)之中,R1所表示之碳原子數3~9之二價的有機基可列舉例如-(CH2)3-、-(CH2)4-、-CH2CH(CH3)-、-(CH2)6-、-(CH2)8-等的伸烷基、
R2或R3所表示之非取代或取代之碳原子數1~8之一價烴基,可列舉例如甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、己基、環己基、2-乙基己基、辛基等的烷基、烯丙基、丙烯基、異丙烯基、丁烯基、異丁烯基、己烯基等的烯基、苯基、甲苯基、茬基等的芳香基、苄基、苯乙基等的芳烷基、鍵結於這些基團之碳原子之氫原子之一部分或全部經氟、溴、氯等的鹵素原子等取代之基團,例如氯甲基、溴乙基、3,3,3-三氟丙基等的經鹵素取代的烷基等,其中甲基及苯基為佳。 The unsubstituted or substituted one-carbon hydrocarbon group having 1 to 8 carbon atoms represented by R 2 or R 3 may, for example, be a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group or a third butyl group. Alkenyl, phenyl, toluene of alkyl, allyl, propenyl, isopropenyl, butenyl, isobutenyl, hexenyl, etc. of a group, a hexyl group, a cyclohexyl group, a 2-ethylhexyl group, an octyl group, etc. An aryl group such as an aryl group, a benzyl group or the like, an aralkyl group such as a benzyl group or a phenethyl group, or a part or all of a hydrogen atom bonded to a carbon atom of these groups is substituted with a halogen atom such as fluorine, bromine or chlorine. A group such as a halogen-substituted alkyl group such as a chloromethyl group, a bromoethyl group, a 3,3,3-trifluoropropyl group or the like, wherein a methyl group and a phenyl group are preferred.
上述式(5)所表示之二胺基矽氧烷化合物,具體而言可列舉以下所示的物質:
這些上述式(5)所表示之二胺基矽氧烷化合物依照希望可使用單獨1種或2種以上的組合。 These diamino sulfoxane compounds represented by the above formula (5) may be used alone or in combination of two or more kinds as desired.
進一步在上述式(4)所表示之二胺之中,上述式(5)所表示之二胺基矽氧烷化合物以外的不具有酚性羥基的二胺,可列舉例如對苯二胺、間苯二胺、4,4'-二胺基二苯甲烷、4,4'-二胺基二苯醚、2,2'-雙(4-胺基苯基)丙烷、4,4'-二胺基二苯碸、4,4'-二胺基二苯硫化物、1,4-雙(3-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、1,4-雙(對胺基苯基磺醯基)苯、1,4-雙(間胺基苯基磺醯基)苯、1,4-雙(對胺基苯基硫醚)苯、1,4-雙(間胺基苯基硫醚)苯、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、2,2-雙[3-甲基-4-(4-胺基苯氧基)苯基]丙烷、2,2-雙[3-氯-4-(4-胺基苯氧基)苯基]丙烷、1,1-雙[4-(4-胺基苯氧基)苯基]乙烷、1,1-雙[3-甲基-4-(4-胺基苯氧基)苯基]乙烷、1,1-雙[3-氯-4-(4-胺基苯氧基)苯基]乙烷、1,1-雙[3,5-二甲基-4-(4-胺基苯氧基)苯基]乙烷、雙[4-(4-胺基苯氧基)苯基]甲烷、雙[3-甲基-4-(4-胺基苯氧基)苯基]甲烷、雙[3-氯-4-(4-胺基苯氧基)苯基]甲烷、雙[3,5-二甲基-4-(4-胺基苯氧基)苯基]甲烷、雙[4-(4-胺基苯氧基)苯基]碸、2,2-雙[4-(4-胺基苯氧基)苯基]全氟丙烷等的芳香族環含有二胺等,宜為對苯二胺、間苯二胺、4,4'-二胺基二苯甲烷、4,4'-二胺基二苯醚、1,4-雙(3-胺基苯氧基)苯、1,4-雙(4-胺基苯氧基)苯、2,2-雙[4-(4-胺基苯氧基)苯基]丙烷、2,2-雙[3-甲基-4-(4-胺 基苯氧基)苯基]丙烷等。 Further, among the diamines represented by the above formula (4), examples of the diamine having no phenolic hydroxyl group other than the diaminocarboxane compound represented by the above formula (5) include, for example, p-phenylenediamine and Phenylenediamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 2,2'-bis(4-aminophenyl)propane, 4,4'-di Aminodiphenyl hydrazine, 4,4'-diaminodiphenyl sulfide, 1,4-bis(3-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene , 1,4-bis(p-aminophenylsulfonyl)benzene, 1,4-bis(m-aminophenylsulfonyl)benzene, 1,4-bis(p-aminophenyl sulfide)benzene , 1,4-bis(m-aminophenyl sulfide) benzene, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[3-methyl- 4-(4-Aminophenoxy)phenyl]propane, 2,2-bis[3-chloro-4-(4-aminophenoxy)phenyl]propane, 1,1-bis[4- (4-Aminophenoxy)phenyl]ethane, 1,1-bis[3-methyl-4-(4-aminophenoxy)phenyl]ethane, 1,1-bis[3 -Chloro-4-(4-aminophenoxy)phenyl]ethane, 1,1-bis[3,5-dimethyl-4-(4-aminophenoxy)phenyl]ethane , bis[4-(4-aminophenoxy)phenyl]methane, bis[3-methyl-4-(4-aminophenoxy)phenyl]methane, [3-Chloro-4-(4-aminophenoxy)phenyl]methane, bis[3,5-dimethyl-4-(4-aminophenoxy)phenyl]methane, bis[4 An aromatic ring such as -(4-aminophenoxy)phenyl]anthracene or 2,2-bis[4-(4-aminophenoxy)phenyl]perfluoropropane contains a diamine or the like, and is preferably P-phenylenediamine, m-phenylenediamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 1,4-bis(3-aminophenoxy)benzene, 1,4-bis(4-aminophenoxy)benzene, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[3-methyl-4 -(4-amine Phenoxy group) phenyl] propane and the like.
從控制與環氧樹脂的交聯點,調整樹脂組成物的柔軟性、控制與環氧樹脂的相溶性這點看來,希望上述式(4)所表示之二胺之中40~95莫耳%為不具有上述酚性羥基的二胺化合物,更佳為50~90莫耳%。 From the viewpoint of controlling the crosslinking point of the epoxy resin, adjusting the flexibility of the resin composition, and controlling the compatibility with the epoxy resin, it is desirable that 40 to 95 moles of the diamine represented by the above formula (4) is desired. % is a diamine compound not having the above phenolic hydroxyl group, more preferably 50 to 90 mol%.
另外,在本發明中,從接著性的觀點看來,以在聚醯亞胺樹脂的聚合物骨架中具有酚性羥基為佳,此羥基的導入可藉由使用具有酚性羥基的二胺化合物而得到,而該酚性羥基與環氧基具有高反應性,這種二胺可例示下述式所表示的物質。 Further, in the present invention, from the viewpoint of adhesion, it is preferred to have a phenolic hydroxyl group in the polymer skeleton of the polyimine resin, and the introduction of the hydroxyl group can be carried out by using a diamine compound having a phenolic hydroxyl group. Further, the phenolic hydroxyl group is highly reactive with an epoxy group, and the diamine can be exemplified by the following formula.
此處,R4之非取代或取代之碳原子數1~8之一價烴基可列舉與上述R2或R3所例示的基團同樣的基團,以及乙炔基、丙炔基、丁炔基、己炔基等的炔基等。另外,R之非取代或取代之一價烴基亦可例示與上述R4所例示的基團同樣的基團。 Here, the unsubstituted or substituted one-carbon hydrocarbon group having 1 to 8 carbon atoms of R 4 may be the same as the group exemplified as the above R 2 or R 3 , and an ethynyl group, a propynyl group or a butyne group. An alkynyl group such as a hexenyl group or the like. Further, the unsubstituted or substituted one-valent hydrocarbon group of R may be the same as the group exemplified for the above R 4 .
在本發明中,上述具有酚性羥基的二胺化合物之中,尤其以下述式(6)所表示之二胺化合物為佳。 In the present invention, among the diamine compounds having a phenolic hydroxyl group, a diamine compound represented by the following formula (6) is particularly preferable.
此外,在本發明中,具有酚性羥基的二胺化合物的摻合量為二胺化合物全體的5~60莫耳%,尤其以10~40莫耳%為佳。若摻合量過少,則會有接著力變低的情形,另外,若過多,則會有接著劑層的柔軟性不足的情形。 Further, in the present invention, the blending amount of the diamine compound having a phenolic hydroxyl group is 5 to 60 mol% of the entire diamine compound, and particularly preferably 10 to 40 mol%. If the blending amount is too small, the adhesive strength may be lowered, and if it is too large, the flexibility of the adhesive layer may be insufficient.
另外,為了導入酚性羥基,亦可使用具有酚性羥基的
單胺,可例示下述構造:
在使用具有酚性羥基的單胺的情況,其摻合量相對於二胺化合物全體而言為1~10莫耳%,宜為2~8莫耳%。 In the case of using a monoamine having a phenolic hydroxyl group, the blending amount thereof is from 1 to 10 mol%, preferably from 2 to 8 mol%, based on the entire diamine compound.
上述胺化合物並不受該等所限定,另外,這些胺化合物可依照希望,單獨使用1種或使用2種以上的組合。 The above-mentioned amine compound is not limited to these, and these amine compounds may be used singly or in combination of two or more kinds as desired.
若列舉聚醯胺酸及聚醯亞胺樹脂的生成反應的具體例子,則使上述起始原料在非活性氣體環境下溶於溶劑,通常使其在80℃以下反應而合成出聚醯胺酸,宜為0~40℃。進一步可藉由使所得到的聚醯胺酸昇溫至通常的100~200℃,宜為150~200℃,使聚醯胺酸的酸醯胺部分脫水閉環,而合成出目標之聚醯亞胺樹脂。 When a specific example of the formation reaction of the polyaminic acid and the polyimine resin is exemplified, the starting material is dissolved in a solvent in an inert gas atmosphere, and usually reacted at 80 ° C or lower to synthesize a polylysine. , should be 0~40 °C. Further, the obtained polyaminic acid can be heated to a normal temperature of 100 to 200 ° C, preferably 150 to 200 ° C, to partially dehydrate the acid amide of poly-proline, thereby synthesizing the target polyimine. Resin.
上述反應所使用的有機溶劑,若為對於所得到的聚醯胺酸而言為非活性的物質,即使不是使前述起始原料能完全溶解的溶劑亦可。可列舉例如四氫呋喃、1,4-二噁烷、環戊酮、環己酮、γ-丁內酯、N-甲基吡咯烷酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺及二甲亞碸,宜為非質子 性極性溶劑,特佳為N-甲基吡咯烷酮、環己酮及γ-丁內酯。這些溶劑可使用1種或組合2種以上。 The organic solvent used in the above reaction may be a solvent which is inactive to the obtained polyamic acid, and may be a solvent which does not completely dissolve the starting material. For example, tetrahydrofuran, 1,4-dioxane, cyclopentanone, cyclohexanone, γ-butyrolactone, N-methylpyrrolidone, N,N-dimethylacetamide, N,N-dimethyl Base carbamide and dimethyl hydrazine, preferably aprotic A polar solvent, particularly preferably N-methylpyrrolidone, cyclohexanone and γ-butyrolactone. These solvents may be used alone or in combination of two or more.
為了使上述脫水閉環容易進行,希望使用甲苯、二甲苯等的共沸脫水劑。另外還可使用無水醋酸/吡啶混合溶液,在低溫下進行脫水閉環。 In order to facilitate the above-described dehydration ring closure, it is desirable to use an azeotropic dehydrating agent such as toluene or xylene. Alternatively, an anhydrous acetic acid/pyridine mixed solution can be used to carry out dehydration ring closure at a low temperature.
此外,為了調整聚醯胺酸及聚醯亞胺樹脂的分子量,亦可添加馬來酸酐、酞酸酐等的二羧酸酐及苯胺、正丁胺、上述所列舉的具有酚性羥基的單胺等的單胺之一者或兩者。但是,二羧酸酐的添加量通常為每100質量份的四羧酸二酐為0~2質量份,單胺的添加量通常為每100質量份的二胺為0~2質量份。 Further, in order to adjust the molecular weight of the polyamic acid and the polyimine resin, a dicarboxylic acid anhydride such as maleic anhydride or phthalic anhydride, aniline or n-butylamine, and the above-exemplified monoamine having a phenolic hydroxyl group may be added. One or both of the monoamines. However, the amount of the dicarboxylic acid anhydride added is usually 0 to 2 parts by mass per 100 parts by mass of the tetracarboxylic dianhydride, and the amount of the monoamine added is usually 0 to 2 parts by mass per 100 parts by mass of the diamine.
(A)成分之聚合物除了聚醯亞胺樹脂以外還可列舉苯氧基樹脂。這種苯氧基樹脂可列舉例如由表氯醇與雙酚A或F等衍生的雙酚型環氧樹脂。這種苯氧基樹脂可列舉商品名如PKHC、PKHH、PKHJ(任一者皆為巴化學公司製);雙酚A‧雙酚F混合型的商品如Epikote 4250、Epikote 4275、Epikote 1255HX30、使用了溴化環氧化合物的Epikote 5580BPX40(任一者皆為日本化藥公司製);雙酚A型的商品如YP-50、YP-50S、YP-55、YP-70(任一者皆為東都化成公司製);JER E1256、E4250、E4275、YX6954BH30、YL7290BH30(任一者皆為Japan Epoxy Resin公司製)等。 The polymer of the component (A) may be a phenoxy resin in addition to the polyimide resin. Such a phenoxy resin may, for example, be a bisphenol type epoxy resin derived from epichlorohydrin, bisphenol A or F or the like. Examples of such phenoxy resins include PKHC, PKHH, and PKHJ (all of which are manufactured by Ba Chemical Co., Ltd.); and bisphenol A and bisphenol F mixed products such as Epikote 4250, Epikote 4275, and Epikote 1255HX30. Epikote 5580BPX40 (all of which is manufactured by Nippon Kayaku Co., Ltd.), which is a brominated epoxy compound; bisphenol A type products such as YP-50, YP-50S, YP-55, and YP-70 (all of which are Dongdu Chemical Co., Ltd.); JER E1256, E4250, E4275, YX6954BH30, YL7290BH30 (all of which are manufactured by Japan Epoxy Resin Co., Ltd.).
(B)成分之環氧樹脂之分子構造、分子量等並不受特別限制。(B)成分之環氧樹脂以聚苯乙烯換算的重量平均分子量宜為100~10000,較佳為100~1000。(B)成分可單獨使用1種或併用2種以上。 The molecular structure, molecular weight, and the like of the epoxy resin of the component (B) are not particularly limited. The epoxy resin of the component (B) preferably has a weight average molecular weight in terms of polystyrene of from 100 to 10,000, preferably from 100 to 1,000. The component (B) may be used alone or in combination of two or more.
這種環氧化合物可列舉例如雙(4-羥苯基)甲烷、2,2'-雙(4-羥苯基)丙烷或此鹵化物之二縮水甘油醚及該等的縮聚合物(所謂雙酚F型環氧樹脂、雙酚A型環氧樹脂等)、丁二烯二環氧化物、乙烯基環己烯二氧化物、間苯二酚之二縮水甘油醚、1,4-雙(2,3-環氧丙氧基)苯、4,4'-雙(2,3-環氧丙氧基)二苯醚、1,4-雙(2,3-環氧丙氧基)環己烯、雙(3,4-環氧-6-甲基環己基甲基)己二酸酯、1,2-二氧基苯或間苯二酚、多價酚或多元醇與表氯醇縮合所得到的環氧縮水甘油醚或聚縮水甘油基酯、苯酚酚醛、甲酚酚醛等的酚醛型酚樹脂(或鹵素化酚醛型酚樹脂)與表氯醇縮合所得到的環氧酚醛(亦即,酚醛型環氧樹脂)、藉由過氧化法環氧化的環氧化聚烯烴、環氧化聚丁二烯、萘環含有環氧樹脂、聯苯型環氧樹脂、酚芳烷基型環氧樹脂、聯苯芳烷基型環氧樹脂、環戊二烯型環氧樹脂等。 Examples of such an epoxy compound include bis(4-hydroxyphenyl)methane, 2,2'-bis(4-hydroxyphenyl)propane or a diglycidyl ether of the halide and the like. Bisphenol F type epoxy resin, bisphenol A type epoxy resin, etc.), butadiene diepoxide, vinyl cyclohexene dioxide, resorcinol diglycidyl ether, 1,4-double (2,3-epoxypropoxy)benzene, 4,4'-bis(2,3-epoxypropoxy)diphenyl ether, 1,4-bis(2,3-epoxypropoxy) Cyclohexene, bis(3,4-epoxy-6-methylcyclohexylmethyl)adipate, 1,2-dioxybenzene or resorcinol, polyvalent phenol or polyol and epichlorohydrin Epoxy phenolic aldehyde obtained by condensation of a phenolic phenol resin (or a halogenated novolac type phenol resin) such as epoxy glycidyl ether or polyglycidyl ester obtained by alcohol condensation, phenol novolac, cresol novolac, and epichlorohydrin That is, a novolac type epoxy resin, an epoxidized polyolefin epoxidized by a peroxidation method, an epoxidized polybutadiene, a naphthalene ring containing an epoxy resin, a biphenyl type epoxy resin, a phenol aralkyl type ring An oxygen resin, a biphenyl aralkyl type epoxy resin, a cyclopentadiene type epoxy resin, or the like.
此外,一分子中具有至少2個上述環氧基之環氧化合物亦可適當地與單環氧化合物併用,此單環氧化合物可例示苯環氧乙烷、環氧環己烷、環氧丙烷、甲基縮水甘油醚、乙基縮水甘油醚、苯基縮水甘油醚、烯丙基縮水甘油醚、環氧辛烷、環氧十二烷等。單環氧化合物可單獨使用 1種或併用2種以上。 Further, an epoxy compound having at least two of the above epoxy groups in one molecule may be suitably used in combination with a monoepoxy compound, which may be exemplified by phenylethylene oxide, epoxycyclohexane, and propylene oxide. , methyl glycidyl ether, ethyl glycidyl ether, phenyl glycidyl ether, allyl glycidyl ether, octylene oxide, epoxy dodecane, and the like. Monoepoxy compounds can be used alone One type or two or more types may be used in combination.
(B)成分的摻合量相對於(A)成分之聚合物100質量份通常為50~400質量份,特佳為80~300質量份。若環氧樹脂的摻合量過少,則會有接著力差的情形,若過多,則在液狀環氧樹脂的情況,會有對薄膜表現出過度的沾黏性而難以操作的情形,另外,在固體狀環氧樹脂的情況,會有接著劑層成為非薄膜狀態的情形。 The blending amount of the component (B) is usually 50 to 400 parts by mass, particularly preferably 80 to 300 parts by mass, per 100 parts by mass of the polymer of the component (A). When the blending amount of the epoxy resin is too small, there is a case where the adhesion is poor. If the amount is too large, in the case of the liquid epoxy resin, the film may exhibit excessive adhesion and is difficult to handle. In the case of a solid epoxy resin, there is a case where the adhesive layer is in a non-thin film state.
(C)成分之無機填充劑的導熱率通常為10 W/mK以上,宜為20 W/mK以上,特佳為30 W/mK以上。此外在本說明書之中,導熱性是在25℃的值。在前述導熱率未滿10 W/mK的情況,會有散熱性不足,半導體元件及基板的溫度上昇的可能性。此外,導熱率的上限並不受特別限制,而典型的來說,在500 W/mK以下。以前述聚矽氧化合物實施表面處理的無機填充劑的具體例,可列舉氧化鋁粉末、氧化鋅粉末、氧化鎂粉末等的氧化物粉末;氮化鋁、6方晶氮化硼、立方晶氮化硼、氮化矽等的氮化物;鋁粉末、銅粉末、銀粉末、金粉末、金屬矽粉末等的金屬粉末;鑽石粉末、奈米碳管等的碳系粉末;該等的2種以上的組合。(C)成分可單獨使用1種或併用2種以上。(C)成分的平均粒徑係以0.05~50μm為佳。 The thermal conductivity of the inorganic filler of the component (C) is usually 10 W/mK or more, preferably 20 W/mK or more, and particularly preferably 30 W/mK or more. Further, in the present specification, the thermal conductivity is a value at 25 °C. When the thermal conductivity is less than 10 W/mK, heat dissipation may be insufficient, and the temperature of the semiconductor element and the substrate may increase. Further, the upper limit of the thermal conductivity is not particularly limited, and is typically below 500 W/mK. Specific examples of the inorganic filler to be surface-treated with the polyfluorene oxide compound include oxide powders such as alumina powder, zinc oxide powder, and magnesium oxide powder; aluminum nitride, hexagonal boron nitride, and cubic crystal nitrogen; a nitride such as boron or tantalum nitride; a metal powder such as an aluminum powder, a copper powder, a silver powder, a gold powder or a metal tantalum powder; a carbon powder such as a diamond powder or a carbon nanotube; or two or more of these The combination. The component (C) may be used alone or in combination of two or more. The average particle diameter of the component (C) is preferably 0.05 to 50 μm.
作為聚矽氧表面處理劑而對(C)成分之無機填充劑進行表面處理之聚矽氧化合物,係下述平均組成式(1)所表示之數量平均分子量500~10000之聚矽氧化合物:(HR1SiO)a(R2 3SiO1/2)b(R3 2SiO)c(R4SiO3/2)d (1)(式中,R1~R4分別獨立,表示不具有脂肪族不飽和鍵的非取代或取代之1價烴基,a為0.1~0.7之正數、b為0.01~0.2之正數、c為0~0.9之數、d為0~0.2之數,惟,滿足a+b+c+d=1) The polyxanthoxy compound which is surface-treated with the inorganic filler of the component (C) as a polyxanthene surface treatment agent is a polyoxonium compound having a number average molecular weight of 500 to 10,000 represented by the following average composition formula (1): (HR 1 SiO) a (R 2 3 SiO 1/2 ) b (R 3 2 SiO) c (R 4 SiO 3/2 ) d (1) (wherein R 1 to R 4 are each independently, indicating that they do not have An unsubstituted or substituted monovalent hydrocarbon group of an aliphatic unsaturated bond, a is a positive number of 0.1 to 0.7, b is a positive number of 0.01 to 0.2, c is a number of 0 to 0.9, and d is a number of 0 to 0.2, but satisfies a+b+c+d=1)
該聚矽氧化合物是作為無機填充劑的表面處理劑,且具有可與被著體反應的接著助劑之作用,對於本發明而言,必須以該聚矽氧化合物對於(C)成分的無機填充劑實施表面處理。亦即,若在該聚矽氧化合物的存在下,對於經表面處理的無機填充劑以高溫進行熱處理,則殘存於該無機填充劑的表面的羥基及無機酸(表面處理劑殘渣)與該聚矽氧化合物的脫氫反應,藉此該表面會被該聚矽氧化合物修飾。進一步而言,在修飾該表面的該聚矽氧化合物中,殘存的氫原子會與被著體反應,因此表現出堅固的接著力。從這些觀點看來,對於本發明而言,對(C)成分進行表面處理是必須的。該聚矽氧化合物只要滿足上述要件,則不受特別限定,可藉由以往周知的方法合成。該聚矽氧化合物可單獨使用1種或併用2種以上。 The polydecane oxide compound is a surface treatment agent as an inorganic filler, and has a function of a secondary auxiliary agent capable of reacting with a body. For the present invention, it is necessary to use the inorganic compound of the poly(oxygen) compound for the (C) component. The filler is subjected to a surface treatment. That is, when the surface-treated inorganic filler is heat-treated at a high temperature in the presence of the polyfluorene oxide compound, the hydroxyl group and the inorganic acid (surface treatment agent residue) remaining on the surface of the inorganic filler are mixed with the polymer. Dehydrogenation of the oxime compound whereby the surface is modified by the polyoxo compound. Further, in the polyoxynitride compound which modifies the surface, the remaining hydrogen atoms react with the host, and thus exhibit a strong adhesion. From these viewpoints, it is necessary for the present invention to carry out surface treatment of the component (C). The polyfluorene oxide compound is not particularly limited as long as it satisfies the above requirements, and can be synthesized by a conventionally known method. These polyoxygen compounds may be used alone or in combination of two or more.
為了製作(C)成分,以在前述聚矽氧化合物的存在下對於無機填充劑實施熱處理為佳,溫度宜為100~180℃,較佳為110~170℃,更佳為120~160℃,時間宜為 10分鐘以上,較佳為30~300分鐘,更佳為50分鐘~180分鐘。若熱處理溫度在100~180℃的範圍內,則殘存在經表面處理的無機填充劑的表面的羥基及無機酸與前述聚矽氧化合物的反應的進行容易變快,且前述聚矽氧化合物不易劣化。另外,若熱處理時間在10分以上,則殘存在經表面處理的無機填充劑的表面的羥基及無機酸與前述聚矽氧化合物的反應容易充分進行。 In order to produce the component (C), it is preferred to heat-treat the inorganic filler in the presence of the polyfluorene oxide, and the temperature is preferably from 100 to 180 ° C, preferably from 110 to 170 ° C, more preferably from 120 to 160 ° C. Time should be 10 minutes or more, preferably 30 to 300 minutes, more preferably 50 minutes to 180 minutes. When the heat treatment temperature is in the range of 100 to 180 ° C, the reaction of the hydroxyl group remaining on the surface of the surface-treated inorganic filler and the reaction of the inorganic acid with the polyfluorene oxide compound tends to be fast, and the polyfluorene oxide compound is not easily obtained. Deterioration. In addition, when the heat treatment time is 10 minutes or more, the reaction of the hydroxyl group remaining on the surface of the surface-treated inorganic filler and the inorganic acid with the polyfluorene oxide compound is sufficiently performed.
前述聚矽氧化合物宜為一分子中具有至少2個如化學式HR1SiO所示,具有鍵結於矽原子的氫原子,且位於分子鏈中途的單元(DH單元),以及一分子中具有至少2個如化學式R2 3SiO1/2所示,不具有鍵結於矽原子的氫原子的單元。亦即,在該聚矽氧化合物之中,鍵結於矽原子的氫原子僅存在於分子鏈中途(亦即僅在(HR1SiO)單元中),在分子鏈末端不存在,分子鏈末端係以藉由(R2 3SiO1/2)單元來封閉為佳。 The polyfluorene oxide compound is preferably a unit having at least two hydrogen atoms represented by the chemical formula HR 1 SiO, having a hydrogen atom bonded to a ruthenium atom, located in the middle of the molecular chain (D H unit), and having one molecule At least two units which are represented by the chemical formula R 2 3 SiO 1/2 and which do not have a hydrogen atom bonded to a ruthenium atom. That is, among the polyoxo compounds, the hydrogen atom bonded to the deuterium atom exists only in the middle of the molecular chain (that is, only in the (HR 1 SiO) unit), and does not exist at the end of the molecular chain, and the end of the molecular chain Preferably , it is blocked by a (R 2 3 SiO 1/2 ) unit.
在上述平均組成式(1)之中,在a未滿0.1的情況,難以得到優異的對於被著體的接著力,在超過0.7的情況,會有在硬化物容易產生空隙,對於被著體的接著力降低的情形。 In the above average composition formula (1), when a is less than 0.1, it is difficult to obtain an excellent adhesion force to the object, and when it exceeds 0.7, a void is likely to be formed in the cured product. The situation in which the adhesion is reduced.
在b未滿0.01的情況,會有在硬化物容易產生空隙,對於被著體的接著力降低的情形,在超過0.2的情況,難以得到優異的對於被著體的接著力。 When b is less than 0.01, voids are likely to occur in the cured product, and when the adhesion force to the object is lowered, when it exceeds 0.2, it is difficult to obtain an excellent adhesion force to the object.
在c超過0.9的情況,前述聚矽氧化合物與環氧樹脂基體的相溶性容易降低,難以得到優異的對於被著體的接 著力。 When c exceeds 0.9, the compatibility of the polyfluorene oxide compound and the epoxy resin matrix is liable to be lowered, and it is difficult to obtain an excellent connection to the object. Focus on.
在d超過0.2的情況,容易引起黏度上昇,難以得到優異的對於被著體的接著力。 When d exceeds 0.2, the viscosity is likely to rise, and it is difficult to obtain an excellent adhesion to the object.
前述聚矽氧化合物的數量平均分子量通常為500~10000,宜為500~7500,較佳為1000~5000,希望為使該聚矽氧化合物在室溫(25℃)為液態之值。在該數量平均分子量小於500的情況,聚矽氧化合物的揮發性容易變高,因此在對無機填充劑表面實施熱處理時,會有難以高溫加熱,表面處理率降低的情形,並且會有接著力降低的顧慮。在該數量平均聚合度大於10000的情況,會有聚矽氧化合物容易變成高黏度,難以確保對於無機填充劑的濕潤性,表面處理率降低的情形。另外,在與無機填充劑之間容易產生大量不具有化學鍵的殘存聚矽氧化合物,會有接著力降低的顧慮。 The polyanthracene compound has a number average molecular weight of usually 500 to 10,000, preferably 500 to 7,500, preferably 1,000 to 5,000, and it is desirable to make the polysiloxane compound liquid at room temperature (25 ° C). When the number average molecular weight is less than 500, the volatility of the polyfluorene oxide tends to be high. Therefore, when the surface of the inorganic filler is subjected to heat treatment, it is difficult to heat at a high temperature, the surface treatment rate is lowered, and there is an adhesion force. Reduced concerns. When the number average degree of polymerization is more than 10,000, the polyoxynitride compound tends to be highly viscous, and it is difficult to ensure the wettability to the inorganic filler, and the surface treatment rate is lowered. Further, a large amount of residual polyoxosiloxane having no chemical bond is likely to be generated between the inorganic filler and the inorganic filler, and there is a concern that the adhesion force is lowered.
前述聚矽氧化合物在25℃時的黏度宜為0.1~1000mPa‧s,較佳為0.5~500mPa‧s、更佳為0.5~300mPa‧s。該聚矽氧化合物希望在室溫(25℃)為液態。 The viscosity of the polyfluorene compound at 25 ° C is preferably from 0.1 to 1000 mPa ‧ s, preferably from 0.5 to 500 mPa ‧ s, more preferably from 0.5 to 300 mPa ‧ s The polyoxynitride is desirably liquid at room temperature (25 ° C).
上述平均組成式(1)中,R1~R4之碳原子數宜為1~10,較佳為1~6。R1~R4的具體例可列舉甲基、乙基、丙基、異丙基、丁基、異丁基、第三丁基、戊基、新戊基、己基、辛基、壬基、癸基等的烷基;環己基等的環烷基;苯基、甲苯基、茬基、萘基等的芳香基;苄基、苯乙基、苯丙基等的芳烷基;這些非取代的烴基的氫原子的 一部分或全部經氟原子、氯原子等的鹵素原子取代之基團,例如3,3,3-三氟丙基等,宜為烷基、芳香基、3,3,3-三氟丙基,較佳為甲基、苯基、3,3,3-三氟丙基。 In the above average composition formula (1), the number of carbon atoms of R 1 to R 4 is preferably from 1 to 10, preferably from 1 to 6. Specific examples of R 1 to R 4 include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a tert-butyl group, a pentyl group, a neopentyl group, a hexyl group, an octyl group, a decyl group, and the like. An alkyl group such as a fluorenyl group; a cycloalkyl group such as a cyclohexyl group; an aryl group such as a phenyl group, a tolyl group, a fluorenyl group or a naphthyl group; an aralkyl group such as a benzyl group, a phenethyl group or a phenylpropyl group; a group in which a part or all of a hydrogen atom of a hydrocarbon group is substituted with a halogen atom such as a fluorine atom or a chlorine atom, for example, a 3,3,3-trifluoropropyl group or the like, preferably an alkyl group, an aromatic group, or a 3,3,3 group. -Trifluoropropyl, preferably methyl, phenyl, 3,3,3-trifluoropropyl.
前述聚矽氧化合物的具體例可列舉由(CH3)HSiO單元、(CH3)2SiO單元、(CH3)3SiO1/2單元所構成之共聚物;由(CH3)HSiO單元、(CH3)3SiO1/2單元、(C6H5)2SiO單元、(CH3)2SiO單元、CH3SiO3/2單元所構成之共聚物;由(C6H5)HSiO單元、(CH3)3SiO1/2單元、(CH3)2SiO單元、CH3SiO3/2單元所構成之共聚物;由(CH3)HSiO單元、(CH3)2SiO單元、C6H5SiO3/2單元所構成之共聚物;由(CF3C2H4)HSiO單元、(CH3)3SiO1/2單元、(CH3)(CF3C2H4)SiO單元、CH3SiO3/2單元所構成之共聚物;由(CH3)HSiO單元、(CH3)3SiO1/2單元、(CH3)(CF3C2H4)SiO單元、(CH3)2SiO單元、CH3SiO3/2單元所構成之共聚物;由(CH3)2HSiO1/2單元、(CH3)(CF3C2H4)SiO單元、CH3SiO3/2單元所構成之共聚物;由(CH3)HSiO單元、(CH3)3SiO1/2單元、(CH3)(CF3C2H4)SiO單元、(CH3)2SiO單元所構成之共聚物;由(CH3)HSiO單元、(CH3)3SiO1/2單元、(CH3)(CF3C2H4)SiO單元、(CH3)2SiO單元、CF3C2H4SiO3/2單元所構成之共聚物;由(CH3)HSiO單元、(CH3)3SiO1/2單元、(CH3)3SiO1/2單元、(CH3)2SiO單元、CH3SiO3/2單元所構成之共聚物;由(CH3)HSiO單元、(CH3)3SiO1/2單元、(CH3)3SiO1/2單元、(C6H5)2SiO單元、 (CH3)2SiO單元、CH3SiO3/2單元所構成之共聚物;由(C6H5)HSiO單元、(CH3)3SiO1/2單元、(CH3)2SiO單元、CH3SiO3/2單元所構成之共聚物等。 Specific examples of the polyfluorene oxide compound include a copolymer composed of a (CH 3 )HSiO unit, a (CH 3 ) 2 SiO unit, and a (CH 3 ) 3 SiO 1/2 unit; and a (CH 3 )HSiO unit; (CH 3 ) 3 SiO 1/2 unit, (C 6 H 5 ) 2 SiO unit, (CH 3 ) 2 SiO unit, CH 3 SiO 3/2 unit copolymer; by (C 6 H 5 )HSiO a copolymer of a unit, a (CH 3 ) 3 SiO 1/2 unit, a (CH 3 ) 2 SiO unit, and a CH 3 SiO 3/2 unit; a (CH 3 )HSiO unit, a (CH 3 ) 2 SiO unit, a copolymer composed of C 6 H 5 SiO 3/2 units; from (CF 3 C 2 H 4 )HSiO units, (CH 3 ) 3 SiO 1/2 units, (CH 3 ) (CF 3 C 2 H 4 ) a copolymer composed of a SiO unit and a CH 3 SiO 3/2 unit; a (CH 3 )HSiO unit, a (CH 3 ) 3 SiO 1/2 unit, a (CH 3 )(CF 3 C 2 H 4 )SiO unit, (CH 3 ) 2 SiO unit, copolymer of CH 3 SiO 3/2 unit; (CH 3 ) 2 HSiO 1/2 unit, (CH 3 ) (CF 3 C 2 H 4 ) SiO unit, CH 3 a copolymer composed of SiO 3/2 units; (CH 3 )HSiO unit, (CH 3 ) 3 SiO 1/2 unit, (CH 3 )(CF 3 C 2 H 4 )SiO unit, (CH 3 ) 2 a copolymer composed of SiO units; by (CH 3 ) HSiO unit, (CH 3 ) 3 SiO 1/2 unit, (CH 3 ) (CF 3 C 2 H 4 ) SiO unit, (CH 3 ) 2 SiO unit, CF 3 C 2 H 4 SiO 3/2 unit a copolymer composed of (CH 3 )HSiO unit, (CH 3 ) 3 SiO 1/2 unit, (CH 3 ) 3 SiO 1/2 unit, (CH 3 ) 2 SiO unit, CH 3 SiO 3/2 a copolymer composed of units; consisting of (CH 3 )HSiO units, (CH 3 ) 3 SiO 1/2 units, (CH 3 ) 3 SiO 1/2 units, (C 6 H 5 ) 2 SiO units, (CH 3 a copolymer composed of 2 SiO units and CH 3 SiO 3/2 units; (C 6 H 5 )HSiO units, (CH 3 ) 3 SiO 1/2 units, (CH 3 ) 2 SiO units, CH 3 SiO A copolymer composed of 3/2 units.
在以前述聚矽氧化合物對於無機填充劑實施表面處理的情況,該聚矽氧化合物的使用量,相對於無機填充劑宜為在0.05~5質量%的範圍,較佳為0.1~3質量%。若該使用量在0.05~5質量%的範圍,則不易產生大量空隙,容易充分得到對於被著體的接著力。 In the case where the surface treatment of the inorganic filler is carried out with the polyfluorene oxide compound, the amount of the polyfluorene oxide compound used is preferably in the range of 0.05 to 5% by mass, preferably 0.1 to 3% by mass based on the inorganic filler. . When the amount used is in the range of 0.05 to 5% by mass, a large amount of voids are less likely to occur, and it is easy to sufficiently obtain the adhesion to the object.
(C)成分的摻合量相對於(A)成分之聚合物100質量份通常為1000~4000質量份,宜為1000~2000質量份。若(C)成分的摻合量過少,則會有無法得到具有產業上所須的導熱率的硬化物的情形。若(C)成分的摻合量過多,則會有所得到的組成物無法成為薄膜形狀,而難以作為薄膜狀接著劑使用的情形。 The blending amount of the component (C) is usually 1,000 to 4,000 parts by mass, preferably 1,000 to 2,000 parts by mass, per 100 parts by mass of the polymer of the component (A). When the blending amount of the component (C) is too small, there is a case where a cured product having an industrially required thermal conductivity cannot be obtained. When the blending amount of the component (C) is too large, the obtained composition cannot be formed into a film shape, and it is difficult to use it as a film-like adhesive.
本發明所使用的環氧樹脂硬化觸媒(D)並無特別限制,可例示例如磷系觸媒、胺系觸媒等。(D)成分可單獨使用1種或併用2種以上。 The epoxy resin curing catalyst (D) used in the present invention is not particularly limited, and examples thereof include a phosphorus-based catalyst and an amine-based catalyst. The component (D) may be used alone or in combination of two or more.
此處,磷系觸媒可列舉三苯膦、三苯鏻三苯硼酸鹽、四苯基鏻四苯基硼酸鹽或如以下所示般的化合物:
此處,R6~R13之一價烴基可列舉與上述R4所例示的基團同樣的基團,另外還可列舉甲氧基、乙氧基、丙氧基、異丙氧基、丁氧基等的烷氧基等。 Here, examples of the one-valent hydrocarbon group of R 6 to R 13 include the same groups as those exemplified above for R 4 , and examples thereof include a methoxy group, an ethoxy group, a propoxy group, an isopropoxy group, and a butyl group. An alkoxy group such as an oxy group.
另外,胺系觸媒可列舉二氰二醯胺、2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰基乙基-2-甲基咪唑、2-苯基-4,5-二羥甲基咪唑等的咪唑衍生物等。 Further, examples of the amine-based catalyst include dicyanodiamide, 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-methylimidazole, and 2-phenyl-4. An imidazole derivative such as 5-dimethylol imidazole or the like.
(D)成分的摻合量為觸媒量(亦即作為觸媒的有效量)即可。 The blending amount of the component (D) may be a catalyst amount (that is, an effective amount as a catalyst).
本發明之接著劑組成物可使用(E)環氧樹脂之硬化劑。此硬化劑可使用以往周知的環氧樹脂用的各種硬化劑,可列舉例如二乙三胺、三乙四胺、二乙基胺基丙胺、N-胺乙基哌嗪、雙(4-胺基-3-甲基環己基)甲烷、間茬二胺、孟烷二胺、3,9-雙(3-胺丙基)-2,4,8,10-四氧螺 (5,5)十一烷等的胺系化合物;環氧樹脂-二乙三胺加成物、胺-環氧乙烷加成物、氰基乙基化多胺等的變性脂肪族多胺;雙酚A、三羥甲基烯丙氧基酚、低聚合度的苯酚酚醛樹脂、環氧化或丁基化酚樹脂或商品名為"Super Beckcite" 1001[日本Reichhold化學工業股份有限公司製]、"Hitanol" 4010[日立製作所股份有限公司製]、Scado form L.9(荷蘭Scado Zwoll公司製)、Methylon 75108(美國General Electric公司製)等所周知的酚樹脂等的分子中含有至少2個酚性羥基的酚樹脂;商品名為"Beckamine" P.138[日本Reichhold化學工業股份有限公司製]、"MELAN"[日立製作所股份有限公司製]、"U-Van" 10R[東洋高壓工業股份有限公司製]等所周知的碳樹脂;三聚氰胺樹脂、苯胺樹脂等的胺基樹脂;下式所表示且一分子中具有至少2個巰基的聚硫化物樹脂HS(C2H4OCH2OC2H4SS)sC2H4OCH2OC2H4SH(s=1~10之整數);酞酸酐、六氫酞酸酐、四氫酞酸酐、焦蜜石酸酐、甲基納迪克酸、十二烷基琥珀酸酐、氯菌酸酐等的有機酸或其無水物(酸酐)等。上述硬化劑之中,酚系樹脂(苯酚酚醛樹脂)由於可賦予本發明之組成物良好的成形作業性以及優異的耐濕性、沒有毒性,且較為低價,故為適合。(E)成分之硬化劑,在使用時未必受限於1種,亦可因應其硬化性能等併用2種以上。 As the adhesive composition of the present invention, (E) a hardener of an epoxy resin can be used. As the curing agent, various curing agents for conventionally known epoxy resins can be used, and examples thereof include diethylenetriamine, triethylenetetramine, diethylaminopropylamine, N-amineethylpiperazine, and bis(4-amine). 3-methylcyclohexyl)methane, m-decanediamine, montananediamine, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraoxaspiro (5,5) An amine compound such as undecane; a denatured aliphatic polyamine such as an epoxy resin-diethylenetriamine adduct, an amine-ethylene oxide adduct or a cyanoethylated polyamine; bisphenol A, Trimethylol allyloxyphenol, low polymerization degree phenol novolac resin, epoxidized or butylated phenol resin or trade name "Super Beckcite" 1001 [made by Japan Reichhold Chemical Industry Co., Ltd.], "Hitanol" 4010 Phenol containing at least two phenolic hydroxyl groups in molecules such as phenol resin known in the world, such as manufactured by Hitachi, Ltd., Scado form L.9 (manufactured by Scado Zwoll Co., Ltd., and Methylon 75108 (manufactured by General Electric Company, USA) Resin; trade name "Beckamine" P.138 [made by Japan Reichhold Chemical Industry Co., Ltd.], "MELAN" [made by Hitachi, Ltd.], "U-Van" 10R [Toyo Takaya Industries, Ltd.] and the like well known carbon resin; amino resin a melamine resin, an aniline resin and the like; represented by the formula in one molecule and having at least two mercapto groups of the polysulfide resin HS (C 2 H 4 OCH 2 OC 2 H 4 SS) s C 2 H 4 OCH 2 OC 2 H 4 SH (s = 1 to 10 integers); phthalic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, pyrogallite anhydride, methyl nadic An organic acid such as an acid, dodecyl succinic anhydride or chloric anhydride or an anhydride thereof (anhydride). Among the above-mentioned curing agents, the phenol resin (phenol phenol resin) is suitable because it can impart good moldability, excellent moisture resistance, and no toxicity to the composition of the present invention. The hardening agent of the component (E) is not limited to one type at the time of use, and two or more types may be used in combination with the curing property.
關於此硬化劑的使用量,其適合的摻合量會依照其具體的種類而有所不同,一般而言在相對於前述環氧樹脂 100質量份為0~100質量份的範圍,宜為在5~50質量份的範圍。在硬化劑的使用量未滿1質量份的情況,會有難以使本發明之組成物良好地硬化的情形,相反地,若超過100質量份,則經濟效益變差,並且環氧樹脂被稀釋,硬化變得需要長時間,甚至會發生硬化物的物性降低這樣的不利情形。 Regarding the amount of the hardener to be used, the suitable blending amount may vary depending on the specific kind thereof, generally speaking, relative to the aforementioned epoxy resin. The range of 100 parts by mass to 0 to 100 parts by mass is preferably in the range of 5 to 50 parts by mass. When the amount of the hardener used is less than 1 part by mass, there is a case where it is difficult to harden the composition of the present invention. On the contrary, if it exceeds 100 parts by mass, the economic efficiency is deteriorated, and the epoxy resin is diluted. Hardening becomes a long time, and even an unfavorable situation in which the physical properties of the hardened material are lowered may occur.
另外,在(A)成分採用骨架中具有酚性羥基之聚醯亞胺樹脂的情況,環氧樹脂與酚系樹脂硬化劑的摻合比是重要的。此情況是利用酚性羥基與環氧基的反應來進行硬化反應,然而若環氧基過少,則會有與被著體的接著力不足的顧慮,另外,若過多,則會有環氧樹脂使彈性率上昇的情形,因此不適合於製作柔軟的接著劑薄片。所以,環氧樹脂與酚系樹脂硬化劑的混合,其摻合量希望為相對於聚醯亞胺樹脂100質量份為1~900質量份,宜為5~400質量份。 Further, in the case where the component (A) is a polyimine resin having a phenolic hydroxyl group in the skeleton, the blending ratio of the epoxy resin to the phenol resin hardener is important. In this case, the curing reaction is carried out by the reaction of a phenolic hydroxyl group and an epoxy group. However, if the epoxy group is too small, there is a concern that the adhesion to the object is insufficient, and if it is too large, there is an epoxy resin. When the modulus of elasticity is increased, it is not suitable for producing a soft adhesive sheet. Therefore, the blending amount of the epoxy resin and the phenol resin hardener is desirably 1 to 900 parts by mass, preferably 5 to 400 parts by mass, per 100 parts by mass of the polyimine resin.
此處,酚系樹脂硬化劑與骨架中具有酚性羥基之聚醯亞胺樹脂的總和相對於環氧樹脂之化學當量比並不受特別限制,而以在0.7~1.3的範圍為佳,較佳為0.8~1.2。若超過此範圍,則會有導致特性經時改變的情形。 Here, the sum of the phenolic resin curing agent and the polyimine resin having a phenolic hydroxyl group in the skeleton is not particularly limited with respect to the chemical equivalent ratio of the epoxy resin, and is preferably in the range of 0.7 to 1.3. Good is 0.8~1.2. If it exceeds this range, there will be a situation in which the characteristics change over time.
此外,即使在不使用酚系樹脂作為環氧樹脂硬化劑的情況,聚醯亞胺樹脂與環氧樹脂的摻合量及當量比亦可定為與前述相同。 Further, even in the case where the phenol resin is not used as the epoxy resin hardener, the blending amount and the equivalent ratio of the polyimide resin and the epoxy resin may be set to be the same as described above.
進一步在本發明之樹脂組成物中,可在不損及本發明之效果的範圍內因應目的而添加二氧化矽微粉末、氧化鈦、碳黑、導電性粒子等的(C)成分以外之填充劑、無機系或有機系的顏料、染料等的著色劑、濕潤向上劑、抗氧化劑、熱安定劑等的添加劑等。 Further, in the resin composition of the present invention, it is possible to add a filler other than the component (C) such as cerium oxide fine powder, titanium oxide, carbon black, or conductive particles in accordance with the purpose within the range that does not impair the effects of the present invention. Additives such as a coloring agent such as a pigment, an inorganic or organic pigment, a dye, a wetting agent, an antioxidant, a heat stabilizer, and the like.
本發明之接著劑組成物可藉由將上述(A)~(C)成分以及因應必要將(D)成分、(E)成分及其他成分依照常法混合來調製。 The adhesive composition of the present invention can be prepared by mixing the above components (A) to (C) and, if necessary, the component (D), the component (E), and other components in accordance with a usual method.
上述所得到的本發明之接著劑組成物之使用方法如以下所述。例如使該接著劑組成物以適當的濃度溶於甲苯,環己酮、NMP等的非質子性極性溶劑,塗佈於基板上使其乾燥,與被著體壓接,並且加熱硬化。另外還可將以適當的濃度溶於溶劑之接著劑組成物塗佈於支持基材(以下會有簡稱為基材的情形)上並使其乾燥,而得到具備基材及設置於該基材上由該組成物所構成之接著劑層(成形為薄膜狀該組成物,以下將其稱為接著薄膜)之接著用薄片,以基板與被著體將此接著薄膜夾住,進行壓接、加熱硬化使其接著。前述基材可採用聚乙烯、聚丙烯、聚酯、聚醯胺、聚醯亞胺、聚醯胺醯亞胺、聚醚醯亞胺、聚四氟乙烯、紙、金屬箔等,或對該等的表面實施脫模處理而成的物品。 The method of using the adhesive composition of the present invention obtained above is as follows. For example, the adhesive composition is dissolved in toluene, an aprotic polar solvent such as cyclohexanone or NMP at an appropriate concentration, applied to a substrate, dried, pressure-bonded to the object, and heat-cured. Further, an adhesive composition which is dissolved in a solvent at an appropriate concentration may be applied onto a support substrate (hereinafter referred to as a substrate for short) and dried to obtain a substrate and provided on the substrate. The subsequent adhesive layer (formed into a film-like composition, which will be referred to as a bonding film hereinafter) is laminated on the film, and the film is sandwiched between the substrate and the object to be crimped. Heat hardened to continue. The foregoing substrate may be polyethylene, polypropylene, polyester, polyamine, polyimine, polyamidimide, polyetherimine, polytetrafluoroethylene, paper, metal foil, etc., or The surface of the surface is subjected to mold release treatment.
在使接著劑組成物成形為薄膜狀而得到接著薄膜時, 係在常溫~200℃特別以在80~150℃下乾燥1分鐘~1小時,尤其又以3~10分鐘為佳。 When the adhesive composition is formed into a film shape to obtain a film, It is dried at room temperature ~200 °C, especially at 80~150 °C for 1 minute to 1 hour, especially 3 to 10 minutes.
接著薄膜的膜厚並無特別限制,可因應目的選擇在5~100μm,特別以5~40μm為佳。另外,將接著薄膜在壓力0.01~10 MPa壓接之後,在溫度100~200℃硬化30分鐘~5小時,尤其宜為在0.1~2 MPa壓接之後在120~180℃硬化1~4小時。 The film thickness of the film is not particularly limited, and may be selected from 5 to 100 μm, particularly preferably from 5 to 40 μm, depending on the purpose. In addition, after the film is pressure-bonded at a pressure of 0.01 to 10 MPa, it is cured at a temperature of 100 to 200 ° C for 30 minutes to 5 hours, and particularly preferably after curing at 0.1 to 2 MPa for 1 to 4 hours at 120 to 180 ° C.
以本發明之接著劑組成物作為接著劑層的導熱性切割/固晶薄膜的使用方法如以下所述。因應必要將接著劑層側的基材薄膜剝離。將晶圓熱壓接於切割/固晶薄膜之黏著劑層,並固定在切割/固晶薄膜上。熱壓接條件可依照接著劑層的組成來作各種選擇,而通常為40~120℃且為0.01~0.2 MPa。接下來,固定於切割裝置進行切割後,將附著在接著劑層的晶片由黏著劑層剝離而取出(pickup),將此晶片熱壓接於導線框架,藉由加熱硬化使其接著。此熱壓接條件可定為與晶圓和接著劑層的熱壓接條件相同,另外,加熱硬化條件可依照接著劑層的組成作各種選擇,而通常為120~250℃。 The method of using the thermally conductive cut/solid crystal film using the adhesive composition of the present invention as an adhesive layer is as follows. The base film on the side of the adhesive layer is peeled off as necessary. The wafer is thermocompression bonded to the adhesive layer of the dicing/solidifying film and fixed on the dicing/solid crystal film. The thermocompression bonding conditions can be variously selected depending on the composition of the adhesive layer, and are usually 40 to 120 ° C and 0.01 to 0.2 MPa. Next, after being fixed to the dicing apparatus for dicing, the wafer adhering to the adhesive layer is peeled off from the adhesive layer and picked up, and the wafer is thermocompression-bonded to the lead frame, and is cured by heating. The thermocompression bonding conditions may be set to be the same as the thermocompression bonding conditions of the wafer and the adhesive layer. Further, the heat curing conditions may be variously selected depending on the composition of the adhesive layer, and are usually 120 to 250 °C.
本發明之接著劑組成物在電子零件的製造時不僅可作為切割/固晶薄膜使用,還可使用需要用到接著的各種步驟。 The adhesive composition of the present invention can be used not only as a dicing/solid-crystal film but also in various subsequent steps in the manufacture of electronic parts.
以下揭示實施例及比較例,對本發明作具體說明,然 而本發明並不受下述實施例所限制。 The embodiments and comparative examples are disclosed below to specifically illustrate the present invention. However, the invention is not limited by the following examples.
‧下述合成例1所得到的具有酚性羥基之聚醯亞胺樹脂 ‧ Polyimine resin having a phenolic hydroxyl group obtained in the following Synthesis Example 1
‧jER(註冊商標)1256(商品名,JER公司製,具有環氧基的苯氧基樹脂,重量平均分子量:50000,Tg:100℃) ‧jER (registered trademark) 1256 (trade name, phenoxy resin with epoxy group, manufactured by JER Co., Ltd., weight average molecular weight: 50,000, Tg: 100 ° C)
‧RE-310S:雙酚A型環氧樹脂(商品名,日本化藥股份有限公司製,重量平均分子量:600) ‧RE-310S: Bisphenol A type epoxy resin (trade name, manufactured by Nippon Kayaku Co., Ltd., weight average molecular weight: 600)
‧(C1)以下述式之聚矽氧化合物C1實施表面處理的AO-502(商品名,Admatechs公司製,氧化鋁,導熱率:27 W/mK,以下相同) ‧ (C1) AO-502 (trade name, manufactured by Admatechs Co., Ltd., alumina, thermal conductivity: 27 W/mK, the same applies below) which is surface-treated with polyoxyl compound C1 of the following formula:
亦即,下述平均組成式所表示之聚矽氧化合物: (HR1SiO)a(R2 3SiO1/2)b(R3 2SiO)c(R4SiO3/2)d(式中,R1~R4表示甲基,a為0.167、b為0.167、c為0.667、d為0)。數量平均分子量:700 That is, the polyoxo compound represented by the following average composition formula: (HR 1 SiO) a (R 2 3 SiO 1/2 ) b (R 3 2 SiO) c (R 4 SiO 3/2 ) d (formula In the above, R 1 to R 4 represent a methyl group, a is 0.167, b is 0.167, c is 0.667, and d is 0). Number average molecular weight: 700
‧(C2)以下述式之聚矽氧化合物C2實施表面處理的AO-502 ‧(C2) AO-502 surface-treated with polyoxyl compound C2 of the following formula
亦即,下述平均組成式所表示之聚矽氧化合物,數量平均分子量:8400, (HR1SiO)a(R2 3SiO1/2)b(R3 2SiO)c(R4SiO3/2)d(式中,R1~R4表示甲基,a為0.409、b為0.013、c為0.579、d為0)。 That is, the polyoxonium compound represented by the following average composition formula has a number average molecular weight of 8400, (HR 1 SiO) a (R 2 3 SiO 1/2 ) b (R 3 2 SiO) c (R 4 SiO 3 /2 ) d (wherein R 1 to R 4 represent a methyl group, a is 0.409, b is 0.013, c is 0.579, and d is 0).
‧(C3)以下述式之聚矽氧化合物C3實施表面處理的AO-502 ‧(C3) AO-502 surface-treated with polyoxyl compound C3 of the following formula
亦即,下述平均組成式所表示之聚矽氧化合物,數量平均分子量:1700, (HR1SiO)a(R2 3SiO1/2)b(R3 2SiO)c(R4SiO3/2)d(式中,R1~R4表示甲基,a為0.469、b為0.063、c為0.469、d為0)。 That is, the polyoxonium compound represented by the following average composition formula has a number average molecular weight of 1,700, (HR 1 SiO) a (R 2 3 SiO 1/2 ) b (R 3 2 SiO) c (R 4 SiO 3 ) /2 ) d (wherein R 1 to R 4 represent a methyl group, a is 0.469, b is 0.063, c is 0.469, and d is 0).
‧(C4)以下述式之聚矽氧化合物C4實施表面處理的AO-502 ‧(C4) AO-502 surface treated with polyoxyl compound C4 of the following formula
亦即,下述平均組成式所表示之聚矽氧化合物,數量平均分子量:3400, (HR1SiO)a(R2 3SiO1/2)b(R3 2SiO)c(R4SiO3/2)d(式中,R1~R4表示甲基,a為0.691、b為0.029、c為0.279、d為0)。 That is, the polyoxonium compound represented by the following average composition formula has a number average molecular weight of 3400, (HR 1 SiO) a (R 2 3 SiO 1/2 ) b (R 3 2 SiO) c (R 4 SiO 3 /2 ) d (wherein R 1 to R 4 represent a methyl group, a is 0.691, b is 0.029, c is 0.279, and d is 0).
‧(C5)以下述式之聚矽氧化合物C5實施表面處理的AO-502 ‧ (C5) AO-502 surface-treated with polyoxyl compound C5 of the following formula
亦即,下述平均組成式所表示之聚矽氧化合物,數量平均分子量:1400, (HR1SiO)a(R2 3SiO1/2)b(R3 2SiO)c(R4SiO3/2)d(式中,R1~R4表示甲基,a為0.083、b為0.083、c為0.833、d為0)。 That is, the polyoxonium compound represented by the following average composition formula has a number average molecular weight of 1400, (HR 1 SiO) a (R 2 3 SiO 1/2 ) b (R 3 2 SiO) c (R 4 SiO 3 /2 ) d (wherein R 1 to R 4 represent a methyl group, a is 0.083, b is 0.083, c is 0.833, and d is 0).
‧(C6)以下述式之聚矽氧化合物C6實施表面處理的AO-502 ‧ (C6) AO-502 surface-treated with polyoxyl compound C6 of the following formula
亦即,平均組成式所表示之聚矽氧化合物,數量平均聚合度:39800, (HR1SiO)a(R2sSiO1/2)b(R3 2SiO)c(R4SiO3/2)d(式中,R1~R4表示甲基,a為0.154、b為0.003、c為0.843、d為0)。 That is, the polyoxonium compound represented by the average composition formula has a number average degree of polymerization: 39800, (HR 1 SiO) a (R 2 sSiO 1/2 ) b (R 3 2 SiO) c (R 4 SiO 3/2 d (wherein R 1 to R 4 represent a methyl group, a is 0.154, b is 0.003, c is 0.843, and d is 0).
‧(C7)以下述式之聚矽氧化合物C7實施表面處理的AO-502 ‧(C7) AO-502 surface treated with polyoxyl compound C7 of the following formula
亦即,下述平均組成式所表示之聚矽氧化合物,數量平均聚合度:400, (HR1SiO)a(R2 3SiO1/2)b(R3 2SiO)c(R4SiO3/2)d(式中,R1~R4表示甲基,a為0.500、b為0.333、c為0.167、d為0)。 That is, the polyoxonium compound represented by the following average composition formula has a number average degree of polymerization: 400, (HR 1 SiO) a (R 2 3 SiO 1/2 ) b (R 3 2 SiO) c (R 4 SiO 3/2 ) d (wherein R 1 to R 4 represent a methyl group, a is 0.500, b is 0.333, c is 0.167, and d is 0).
‧(C8)以下述式之聚矽氧化合物C8實施表面處理的AO-502 ‧(C8) AO-502 surface treated with polyoxyl compound C8 of the following formula
亦即,下述平均組成式所表示之聚矽氧化合物,數量平均聚合度:900, (HR1SiO)a(R2 3SiO1/2)b(R3 2SiO)c(R4SiO3/2)d(式中,R1~R4表示甲基、a為0.889、b為0.111、c為0、d為0)。 That is, the polyoxonium compound represented by the following average composition formula has a number average degree of polymerization: 900, (HR 1 SiO) a (R 2 3 SiO 1/2 ) b (R 3 2 SiO) c (R 4 SiO 3/2 ) d (wherein R 1 to R 4 represent a methyl group, a is 0.889, b is 0.111, c is 0, and d is 0).
‧(C9)並未以聚矽氧化合物實施表面處理的AO-502 ‧(C9) AO-502 without surface treatment with polyoxyl compounds
此外,(C1)~(C8)成分是藉由將對應於(C1)~(C8)成分的上述聚矽氧化合物1.7質量份與100質量份的AO-502混合,在150℃下進行熱處理60分鐘來調製。 Further, the components (C1) to (C8) are heat-treated at 150 ° C by mixing 1.7 parts by mass of the above polysiloxane compound corresponding to the components (C1) to (C8) with 100 parts by mass of AO-502. Minutes to modulate.
‧DICY-7(商品名,JER股份有限公司製,二氰二醯胺) ‧DICY-7 (trade name, manufactured by JER Co., Ltd., dicyandiamide)
在具備與回流冷凝器連結的25ml附旋塞的水分定量接收管、溫度計及攪拌器的1L可分離式燒瓶中,裝入作為二胺的下述構造式之二胺基矽氧烷(商品名:KF-8010、信越化學公司製)44.03質量份、及作為反應溶劑的2-甲基吡咯烷酮100質量份,在80℃下攪拌,使二胺分散於反應溶劑中。於其中滴入由作為酸酐的6FDA(2,2-雙(3,4-二羧基苯基)六氟丙烷二酐)38.72質量份與2-甲基吡咯烷酮100質量份所構成之溶液,在室溫下攪拌2小時,使二胺與酸酐反應,藉此合成出富含酸酐的醯胺酸寡聚物。 In a 1 L separable flask equipped with a 25 ml moisture-containing receiving tube, a thermometer, and a stirrer connected to a reflux condenser, a diamine-based oxirane having the following structural formula as a diamine was charged (trade name: 44.03 parts by mass of KF-8010 and Shin-Etsu Chemical Co., Ltd., and 100 parts by mass of 2-methylpyrrolidone as a reaction solvent were stirred at 80 ° C to disperse the diamine in the reaction solvent. A solution of 38.72 parts by mass of 6FDA (2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride) as an acid anhydride and 100 parts by mass of 2-methylpyrrolidone was added dropwise thereto. The acid is stirred for 2 hours to react the diamine with the acid anhydride, thereby synthesizing an acid anhydride-rich proline oligomer.
接下來,將下述式:
對於所得到的聚醯亞胺樹脂測定紅外吸收光譜的結果,代表仍有未反應的官能基之聚醯胺酸產生的吸收並未出現,在1780cm-1及1720cm-1確認有醯亞胺基產生的吸收,在3500cm-1確認有酚性羥基產生的吸收。 As a result of measuring the infrared absorption spectrum of the obtained polyimine resin, the absorption by polyamine which still has an unreacted functional group did not occur, and a quinone imine group was confirmed at 1780 cm -1 and 1720 cm -1 . The absorption produced was confirmed to have an absorption by a phenolic hydroxyl group at 3,500 cm -1 .
將所得到的聚醯亞胺樹脂澆鑄在鐵氟龍(註冊商標)薄膜上,而製作出厚度為100μm的聚醯亞胺薄膜。使用真空理工公司製的熱機械測試機TM-7000,在荷重10g及昇溫速度10℃/min的條件下,以熱機械分析(TMA)法測定此聚醯亞胺薄膜的Tg,其結果為130℃。 The obtained polyimine resin was cast on a Teflon (registered trademark) film to prepare a polyimide film having a thickness of 100 μm. The Tg of the polyimide film was measured by a thermomechanical analysis (TMA) method using a thermomechanical tester TM-7000 manufactured by Vacuum Technology Co., Ltd. under a load of 10 g and a temperature increase rate of 10 ° C/min. °C.
以下述表1或2所示的摻合量使(A)成分溶於聚合物稀釋溶劑(環己酮)中,並在所得到的溶液中以下述表1或2所示的摻合量添加(B)成分、(C)成分或(C')成分、(D)成分以及後添加的溶劑並且加以混合,而調製接著劑組成物。 The component (A) was dissolved in a polymer diluent solvent (cyclohexanone) by the blending amount shown in the following Table 1 or 2, and added in the obtained solution in the amount shown in the following Table 1 or 2. The component (B), the component (C), the component (C), the component (D), and the solvent to be added are mixed and mixed to prepare an adhesive composition.
將前述所得到的接著劑組成物塗佈在以氟聚矽氧脫模劑被覆且厚度38μm的PET薄膜上,在110℃下加熱乾燥10分鐘,而製作出具備厚度約25μm的接著劑層(以下稱為接著薄膜)之接著用薄片。 The adhesive composition obtained above was applied onto a PET film coated with a fluoropolyoxymethylene release agent and having a thickness of 38 μm, and dried by heating at 110 ° C for 10 minutes to prepare an adhesive layer having a thickness of about 25 μm. Hereinafter, it is referred to as a subsequent sheet of the film.
由前述所製作的接著用薄片得到3mm×3mm的接著薄膜。另外準備3mm×3mm×厚度725μm的矽晶圓與塗佈有AUS308(商品名,阻焊劑,太陽油墨股份有限公司製) 的表面粗糙度5μm以下的BT基板(15mm×15mm)。將前述接著薄膜與前述矽晶圓依序疊在此BT基板上,使該矽晶圓的下面全部被該接著薄膜覆蓋,在170℃、0.67 MPa,2sec的條件下進行固晶。在175℃/4hrs的條件下將由矽晶圓、接著薄膜及BT基板所構成之該層合體加熱,在使該接著薄膜硬化之後,在260℃的溫度,距離BT基板50μm的高度,以200μm/sec的剪切速率測定所得到的硬化接著薄膜的接著力。將結果揭示於表1或2。 A 3 mm x 3 mm follow-up film was obtained from the subsequent sheet produced as described above. In addition, a 3 mm × 3 mm × 725 μm thick tantalum wafer was prepared and coated with AUS308 (trade name, solder resist, manufactured by Sun Ink Co., Ltd.). A BT substrate (15 mm × 15 mm) having a surface roughness of 5 μm or less. The bonding film and the germanium wafer are sequentially stacked on the BT substrate, and the lower surface of the germanium wafer is entirely covered by the adhesive film, and solid crystallizing is performed at 170 ° C, 0.67 MPa, and 2 sec. The laminate composed of the tantalum wafer, the adhesive film, and the BT substrate was heated at 175 ° C / 4 hrs, and after curing the adhesive film, at a temperature of 260 ° C, a height of 50 μm from the BT substrate was 200 μm / The shear rate of sec was measured to obtain the adhesion of the cured film followed by the film. The results are disclosed in Table 1 or 2.
將由矽晶圓‧接著薄膜及BT基板所構成之前述層合體保管在JEDEC L2條件(在85℃、60%RH的條件下進行168hrs)下,接下來,通過最高溫度260℃的IR迴焊裝置3次之後,在與前述相同條件下測定硬化接著薄膜的接著力。將結果揭示於表1或2。 The laminate consisting of a tantalum wafer ‧ a film and a BT substrate is stored under JEDEC L2 conditions (168 hrs at 85 ° C, 60% RH), and then passed through an IR reflow device having a maximum temperature of 260 ° C. After 3 times, the adhesion of the cured film to the film was measured under the same conditions as described above. The results are disclosed in Table 1 or 2.
層合多個前述接著薄膜,而製作出由該接著薄膜所構成之厚度50μm、直徑12.5mm的圓盤形層合體。將此層合體夾在兩枚1mm厚度的Al板之間,加熱至175℃,使該接著薄膜硬化之後,使用NETZSCH公司的氙閃光燈分析儀LFA447,以雷射閃光燈法測定硬化接著薄膜的導熱率。將結果揭示於表1或2。 A plurality of the above-mentioned adhesive films were laminated, and a disk-shaped laminate having a thickness of 50 μm and a diameter of 12.5 mm composed of the adhesive film was produced. The laminate was sandwiched between two 1 mm thick Al plates, heated to 175 ° C, and after curing the adhesive film, the thermal conductivity of the cured film was measured by a laser flash method using a NETZSCH strontium flash analyzer LFA447. . The results are disclosed in Table 1 or 2.
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CN106029803A (en) | 2014-02-24 | 2016-10-12 | 汉高知识产权控股有限责任公司 | Thermally conductive pre-applied underfill formulations and uses thereof |
JP6648402B2 (en) * | 2014-12-22 | 2020-02-14 | 住友ベークライト株式会社 | Thermal conductive sheet, cured product of thermal conductive sheet, and semiconductor device |
JP2016219619A (en) * | 2015-05-21 | 2016-12-22 | 日東電工株式会社 | Adhesive sheet, dicing tape-integrated adhesive sheet, film, manufacturing method of semiconductor device, and semiconductor device |
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JP2013091680A (en) | 2013-05-16 |
CN103059787B (en) | 2015-08-19 |
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