TW201331973A - Ion beam measurement device, ion beam measurement method and ion injection device - Google Patents

Abstract

The invention provides a non-contact ion beam measurement. The ion beam measurement device 10 of the invention includes a tank 20 disposed by adjoining the ion beam path 14 and contained with alkali metal; a laser light source 22 for irradiating a measured laser beam 32 toward the tank 20 to polarize the spinning of alkali atoms; and a detector 24 for detecting a transmitted laser beam 34 passing through the tank 20. The ion beam measurement device 10 has magnetic bodies surrounding the ion beam path 14 to form a magnetic gap. The tank 20 can be disposed in the magnetic gap.

Description

Ion beam measuring device, ion beam measuring method and ion implantation device

The invention relates to an ion beam measuring device, an ion beam measuring method and an ion implantation device.

An ion implantation apparatus for ion-implanting an ion beam containing an ion species to be implanted into a workpiece such as a semiconductor substrate and irradiating the object to be processed is known. The ion implantation apparatus is usually provided with a measuring instrument for directly receiving the irradiation of the ion beam and performing beam measurement, such as a Faraday cup.

(previous technical literature) (Patent Literature)

Patent Document 1: Japanese Laid-Open Patent Publication No. 2008-262748

Patent Document 2: Japanese Patent Laid-Open Publication No. 2000-11942

Patent Document 3: Japanese Patent Laid-Open No. 7-134316

In the so-called contact beam measurement in which the incident of the ion beam is directly received, since the measuring instrument occupies the beam during the measurement, the object to be processed cannot be irradiated with the ion beam. Similarly, when the object to be processed is irradiated with an ion beam, measurement cannot be performed. Therefore, the throughput of the irradiation treatment toward the object to be processed and the beam quality based on the measurement of the high frequency of the ion beam are improved. The guarantee of quantity becomes a trade-off relationship. Further, in addition to the original purpose of irradiating the object to be irradiated, the ion material is additionally consumed by the measurement.

One of the exemplary objects of an aspect of the present invention is to provide a so-called non-contact measurement capable of performing measurement while irradiating an object with an ion beam.

One aspect of the invention is an ion beam measurement device. The device comprises: a groove disposed adjacent to the ion beam path and accommodating at least an alkali metal; a light source for illuminating the groove with laser light that polarizes the alkali metal atom; and a detector for The laser light transmitted through the aforementioned grooves is detected.

Another aspect of the invention is an ion beam measurement method. The method includes supplying an ion beam and measuring a magnetic field from the aforementioned ion beam using an optical pump magnetometer.

Further, any combination of the above constituent elements or constituent elements or expressions of the present invention, which are mutually substituted between methods, apparatuses, systems, etc., is also effective as an aspect of the present invention.

According to the present invention, a non-contact ion beam measurement is provided.

Fig. 1 is a view showing an ion beam measuring device 10 according to an embodiment of the present invention. The ion beam measuring device 10 measures the magnetic field from the ion beam 12 in accordance with a measurement principle common to a so-called optical pump magnetometer. Optical pump magnetic A strong gauge is a magnetometer that measures the spin-polarized external magnetic field of a certain atom (usually an alkali metal atom) that is excited by light, based on the amount of light absorbed by the atom.

In the vicinity of the ion beam 12, a magnetic field of a magnitude corresponding to the amount of beam current of the ion beam 12 can be generated by the ion beam 12. Thereby, the ion beam measuring device 10 indirectly measures the ion beam 12 from the magnetic field generated by the ion beam 12. From the provision of such a non-contact ion beam measurement, it is known that the ion beam measuring device 10 is different from a contact type measuring instrument (for example, a Faraday cup) having an incident detecting surface that directly receives the ion beam 12.

The ion beam 12 is supplied to the processing chamber 16 along a predetermined ion beam path 14 (indicated by a broken line in Fig. 1). The processed object 18 is accommodated in the processing chamber 16. The processing chamber 16 is provided with a support portion that supports the workpiece 18 in a state of being movable or stationary with respect to the ion beam 12. The ion beam 12 is irradiated toward the workpiece 18 disposed on the ion beam path 14. The ion beam 12 is generated, for example, by an ion beam generating unit (not shown) including an ion source and a beam line.

The ion beam 12 can be incident on the object 18 along the fixed ion beam path 14. Alternatively, the ion beam 12 may be scanned in a direction perpendicular to the ion beam path 14 throughout the scan range 19 (indicated by the arrows in Figure 1) (i.e., the ion beam 12 may travel back and forth within the scan range 19). The cross section of the ion beam 12 perpendicular to the ion beam path 14 may be a spot shape (for example, a circular shape) or a shape extending in the longitudinal direction (a direction perpendicular to the ion beam path 14).

The ion beam measuring device 10 can be used as a supplement for measuring the ion beam 12 The assist system is assembled by an ion beam irradiation system (for example, an ion implantation apparatus or a particle beam treatment apparatus) for irradiating the ion beam 12. Alternatively, the ion beam measuring device 10 may be configured as a stand-alone type of Stand Alone type measuring device.

When the ion beam measuring device 10 is assembled to the ion implantation device, the processed object 18 is, for example, a semiconductor substrate (for example, a germanium wafer). Processing chamber 16 is sometimes also referred to as an end station. When the ion beam 12 is irradiated, the processing chamber 16 is at least in a desired vacuum state. In order to make the processing chamber 16 a vacuum, a vacuum exhaust device (for example, a cryopump or another vacuum pump (not shown)) is attached to the processing chamber 16. Thereby, the processing chamber 16 is also referred to as a vacuum chamber or a process chamber or the like.

The ion beam measuring device 10 includes a tank 20, a laser light source 22, and a detector 24. The tank 20 contains at least an alkali metal. The laser light source 22 is configured to illuminate the groove 20 with the spin-polarized laser light of the alkali metal atom. The detector 24 is configured to detect the laser light having passed through the groove 20. The slot 20, the laser source 22 and the detector 24 constitute an optical pump magnetometer.

The groove 20 is a hollow body having an internal space 26. The shape of the groove 20 is, for example, a rectangular parallelepiped whose length of each side is within a few cm, and the thickness of the outer wall is, for example, within a few mm. The groove 20 is formed of, for example, a non-magnetic material having heat resistance such as heat resistant glass. Also, the material of the groove 20 has transparency to light from the laser source 22.

The alkali metal and the buffer gas are sealed in the internal space 26 of the tank 20, and the seal is made airtight with respect to the outside. The alkali metal is, for example, potassium, rubidium or cesium. The buffer gas is, for example, an inert gas such as helium, nitrogen or both.

The trough 20 is disposed adjacent to the ion beam path 14 inside the processing chamber 16. The trough 20 is placed in an environment (e.g., a vacuum environment) that is common to the ion beam path 14. The groove 20 is disposed at a position adjacent to the workpiece 18 in the direction along the ion beam path 14. That is, the groove 20 is disposed directly in front of the workpiece 18. There are some gaps between the groove 20 and the workpiece 18 to avoid contact between the two. Since the ion beam 12 generates a concentric magnetic field having the ion beam path 14 as a central axis, the magnetic field of the ion beam 12 before being incident on the object 18 can be measured by such an arrangement of the grooves 20.

Also, the groove 20 is disposed at a position deviated from the ion beam path 14 so as not to impede the ion beam 12. When scanning the ion beam 12, the slot 20 is disposed at a position offset from the scanning range 19 of the ion beam 12.

The groove 20 has an incident portion 28 and an exit portion 30. The incident portion 28 receives a portion of the incident laser light 33 that faces the groove 20, and the output portion 30 emits the transmitted laser light 34 that has passed through the internal space 26 to a portion outside the groove 20. For example, when the shape of the groove 20 is a rectangular parallelepiped, the incident portion 28 is on one side of the groove 20, and the exit portion 30 is on the surface facing the surface.

Hereinafter, incident laser light 33 and transmitted laser light 34 are collectively referred to as measurement laser light 32. The laser light 32 is measured to exit the laser source 22 and is incident on the detector 24 through the slot 20.

The ion beam measuring device 10 may include a heater (not shown) for heating the tank 20. This heater is used to promote evaporation of the alkali metal enclosed in the tank 20. In order to maintain the temperature of the tank 20, or to maintain the state of being heated by the heater, the ion beam measuring device 10 may be provided with a package. A heat insulating material covering the outer surface of the groove 20. At this time, in order to make the light transmission groove 20, at least the incident portion 28 and the emission portion 30 are not covered with the heat insulating material, and the outer surface of the groove 20 is exposed.

The laser source 22 is configured to emit circularly polarized measured laser light 32. The laser source 22 is arranged such that the measured laser light 32 faces the incident portion 28 of the slot 20. The laser light source 22 is provided inside the processing chamber 16 in the same manner as the groove 20, for example.

The wavelength of the laser light 32 is determined to correspond to the excitation energy of the alkali metal atoms enclosed in the groove 20. The laser light 32 is measured to have a circular polarization, whereby the electron spin of the alkali metal atom can be excited, so that the spin of the alkali metal atom can be polarized. As long as spin polarization can be achieved, elliptically polarized laser light can be used instead of circularly polarized laser light. Further, the laser light source 22 (or the beam optical system 36 to be described later) may include a polarization control unit (not shown) for setting the laser light incident on the groove 20 to a desired polarization state (for example, circular polarization).

The measurement of the laser light 32 is directed to transmit the groove 20 in a direction perpendicular to the magnetic field generated by the ion beam 12. For example, as shown in FIG. 1, the direction in which the laser light 32 is directed in parallel with the ion beam path 14 is measured.

The ion beam measuring device 10 may further include a beam optical system 36 between the groove 20 and the laser light source 22. The beam optics 36 can be configured to generate reference laser light 38 from the laser source 22. The beam optics system 36 can be provided with a beam splitter 40. The beam splitter 40 is provided to separate the reference laser light 38 from the measured laser light 32 before measuring that the laser light 32 is incident on the groove 20. A portion of the measured laser light 32 from the laser source 22 is divided into The beamer 40 transmits and the remainder is reflected by the beam splitter 40 as reference laser light 38. The beam splitter 40 is, for example, a half mirror.

The beam optical system 36 is configured to cause the reference laser light 38 to be returned to the groove 20. The beam optics 36 can be provided with a mirror 42 for directing the reference laser light 38 toward the detector 24. The mirror 42 reflects the reference laser light 38 reflected by the beam splitter 40 and faces it toward the detector 24. Thereby, the reference laser light 38 is not incident on the groove 20.

Thus, a portion (e.g., half) of the measured laser light 32 emitted from the laser source 22 is received by the beam optics 36 and the slot 20 and received by the detector 24. Also, a portion (e.g., half) of the laser light 32 is measured as the reference laser light 38, received by the detector 24 via the beam optical system 36 and not via the slot 20.

The beam radiated from the laser light source 22 is set to have uniform intensity radiation, but actually can be slightly changed in time. For example, in a very short time, the beam intensity can fluctuate, or the beam intensity can also change over a long period of time. Therefore, by measuring the laser light 32 and the reference laser light 38 that are not passed through the groove 20 from the same source, it is possible to reduce or compensate for the fluctuation of the beam intensity or the change with time. influences.

Also, gas molecules are present in the processing chamber 16 at a density corresponding to their degree of vacuum. Laser light 32, 38 is also affected by this gas. For example, the intensity is reduced depending on the length of the optical path. Since the laser light 32 measured by the groove 20 and the reference laser light 38 that does not pass are set to substantially equal optical path lengths, the reference laser light 38 can be used as a reference. Reduce or compensate for the effects of gas in the vacuum on the measurement.

Further, it is obvious that the configuration of the beam optical system 36 shown in Fig. 1 is merely an example, and may be various structures different from those shown in the drawings. For example, the groove 20 may be disposed on the light path through the mirror 42 without returning to the groove 20 via the optical path of the mirror 42. Further, when it can be evaluated that the influence of the gas is sufficiently small, the path length of the laser light 32 measured by the groove 20 and the reference laser light 38 that does not pass may be substantially different. The reference beam source can also be separated from the laser source 22 when a beam source capable of emitting a beam at a uniform intensity can be employed. When the cause of the error is evaluated as being insufficient, the ion beam measuring device 10 may not use the reference laser light 38.

Detector 24 is provided for detecting transmitted laser light 34 that has been transmitted through slot 20. The detector 24 is configured to receive the incident of the transmitted laser light 34 on its detection surface, and output the first detection signal S1. The first detection signal S1 is, for example, related to the intensity of the transmitted laser light 34. Further, the detector 24 is provided to detect the reference laser light 38. The detector 24 is configured to receive the incidence of the reference laser light 38 on the detection surface thereof, and output the second detection signal S2. The second detection signal S2 is related, for example, to the intensity of the reference laser light 38. The detector 24 is, for example, a detector (for example, a photodiode) capable of detecting the transmitted laser light 34 and the reference laser light 38. The detector 24 is disposed, for example, inside the processing chamber 16.

The ion beam measuring device 10 may include an arithmetic processing unit 44 for calculating a measurement result based on an input signal including at least the first detection signal S1. The arithmetic processing unit 44 is configured to be able to receive the first detection signal S1 from the detector 24. And, the arithmetic processing unit 44 is configured to be capable of detecting from the detector 24 receives the second detection signal S2. The arithmetic processing unit 44 can calculate the measurement result based on the first detection signal S1 and the second detection signal S2. The arithmetic processing unit 44 may be an arithmetic device such as a well-known personal computer that is provided separately from the detector 24. The arithmetic processing unit 44 can be integrally mounted on the detector 24.

Further, in the ion beam measuring device 10, a part of the constituent elements other than the groove 20 may be disposed away from the ion beam path 14. For example, at least one of the laser light source 22 and the detector 24 may be provided outside the processing chamber 16. At this time, the ion beam measuring device 10 may include a window portion formed on a wall surface of the processing chamber 16, and a light guiding member (for example, an optical fiber) connected to the window portion. At least one of the external laser light source 22 and the detector 24 is connected to the processing chamber 16 by a light guiding member. This arrangement enables the use of general-purpose products that are not necessarily suitable for the vacuum environment within the processing chamber 16.

Further, for example, in order to suppress the influence of the magnetic field from the outside of the processing chamber 16 on the measurement, the ion beam measuring device 10 may be provided with a magnetic shield (not shown). The magnetic shield is disposed, for example, inside the processing chamber 16, and is configured to surround the groove 20 and the ion beam path 14. The portion of the magnetic shield that intersects the ion beam path 14 forms an opening for the ion beam 12 to pass through. Openings for measuring the laser light 32 and the reference laser light 38 are also formed on the magnetic shield as needed.

The operation of the ion beam measuring device 10 will be described. Pre-processing is performed in the ion beam measuring device 10 before measurement. This pre-treatment includes illuminating the slot 20 with the measured laser light 32. At this time, the ion beam 12 is not supplied to the ion beam path 14. When a heater for heating the tank 20 is provided, Before or during the measurement of the laser light 32, the bath 20 is heated to a predetermined temperature for sufficiently vaporizing the alkali metal.

In this pre-processing, the alkali metal atom that receives the irradiation of the measured laser light 32 is subjected to spin polarization. When the entire alkali metal atom enclosed in the groove 20 is sufficiently spin-polarized, it is determined that the laser light 32 does not interact with the alkali metal atom and is transmitted through the groove 20. At this time, the spin of the alkali metal atom is neat.

The pre-processing may include a correction process based on the detector 24 of the arithmetic processing unit 44. The correction processing may include correcting a difference between the first detection signal S1 obtained from the measurement laser light 32 and the second detection signal S2 obtained from the reference laser light 38 to a predetermined initial value (for example, zero).

When the pre-processing is completed, the ion beam measuring device 10 can start measurement. The ion beam 12 is supplied to the ion beam path 14 for measurement. The ion beam 12 is irradiated onto the object 18 to be processed.

The ion beam 12 generates a concentric magnetic field with the ion beam path 14 as a central axis. This magnetic field acts on the alkali metal atoms in the tank 20, and the neat spin is disturbed. If the spin of the alkali metal atom is disturbed, it is determined that the laser light 32 is absorbed again. There is a correlation between the amount of absorption and the magnitude of the external magnetic field. That is, the intensity of the transmitted laser light 34 is reduced in accordance with the magnitude of the magnetic field from the ion beam 12. As described above, the detector 24 generates the first detection signal S1 corresponding to the intensity of the transmitted laser light 34.

Thereby, as the intensity of the transmitted laser light 34 decreases, the first detection signal S1 also becomes small. On the other hand, since the intensity of the reference laser light 38 that does not pass through the groove 20 does not change, the second detection signal S2 does not change. Therefore, depending on the magnitude of the magnetic field from the ion beam 12, the first detection signal S1 The difference from the second detection signal S2 changes. The arithmetic processing unit 44 calculates the ion beam current based on the change in the difference between the first detection signal S1 and the second detection signal S2.

Alternatively, when the reference laser light 38 is not used, the ion beam measuring device 10 can determine whether or not the beam intensity is lowered by comparing the first detection signal S1 with a predetermined threshold.

In this manner, the ion beam measuring device 10 measures the magnetic field from the ion beam 12 using an optical pump magnetometer. The ion beam measuring device 10 converts the measured magnetic field into an ion beam current using a well-known relationship between the magnetic field and the current. Therefore, according to the ion beam measuring device 10, the ion beam 12 can be irradiated to the workpiece 18 while being measured in a non-contact manner at any time.

Further, in a typical ion implantation apparatus, a contact type detector (for example, a Faraday cup) is provided outside the workpiece 18, and in order to measure, it is necessary to irradiate the contact type detector with an ion beam. However, according to an embodiment of the present invention, it is not necessary to irradiate the ion beam 12 to the outside of the workpiece 18 for the measurement of the ion beam 12. Therefore, the irradiation region of the ion beam 12 and the inner side of the workpiece 18 can be simultaneously reduced. Thus, an increase in the throughput of the irradiation treatment of the ion beam 12 and a reduction in the consumption of the ionic material will be achieved.

When the scanning of the ion beam 12 is performed, the distance between the ion beam 12 and the groove 20 differs depending on the scanning position, and therefore the measured magnetic field changes even if the current amount of the ion beam 12 is equal. Therefore, in order to suppress the influence on the measurement due to the scanning position of the ion beam 12, the ion beam measuring device 10 may be configured to synchronize the measurement with the scanning of the ion beam 12. ion The beam measuring device 10 may be configured to detect a detection signal of a frequency component equal to the scanning frequency of the ion beam 12. Thus, for example, the arithmetic processing unit 44 can be provided with a lock-in amplifier.

Fig. 2 is a view showing an ion beam measuring device 10 according to an embodiment of the present invention. The ion beam measuring device 10 shown in Fig. 2 differs from the ion beam measuring device 10 shown in Fig. 1 in that it includes the magnetic circuit 50. Fig. 3 is a view showing a magnetic circuit 50 according to an embodiment of the present invention. Fig. 3 is a plan view showing the magnetic circuit 50 as viewed along the advancing direction of the ion beam 12. In the following description, the ion beam measuring device 10 shown in FIGS. 1 and 2 will be appropriately omitted from the same portions in order to avoid redundancy.

As shown in Fig. 2, the groove 20 of the ion beam measuring device 10 is disposed in the magnetic circuit 50 surrounding the ion beam 12. The magnetic circuit 50 surrounds the entire scanning range 19 of the ion beam 12.

As shown in FIG. 3, the magnetic circuit 50 is provided with a magnetic body 52. The magnetic body 52 is formed in a ring shape. In other words, the magnetic body 52 has a shape that extends in the circumferential direction so as to surround the open region 54. The magnetic body 52 is configured such that the ion beam 12 passes through the open region 54. The open region 54 of the magnetic body 52 contains the entire scanning range 19 of the ion beam 12. The magnetic body 52 has a gap between one of the end faces 58 and the other end face 60 that faces the end face 58 in the circumferential direction. This gap forms a magnetic gap 56 in the magnetic circuit 50. The magnetic body 52 is, for example, a ring having a notch portion that forms the magnetic gap 56. The material of the magnetic body 52 is, for example, iron.

A groove 20 is disposed in the magnetic gap 56. One end surface 58 of the magnetic body 52 forming the magnetic gap 56 is adhered to or slightly separated from one side of the groove 20. The gap is configured. The surface facing the groove 20 is adhered to the other end surface 60 of the magnetic body 52 with a slight gap therebetween. In Fig. 3, the incident portion 28 of the incident laser light 33 of the groove 20 is shown on the front side.

The magnetic path 50 surrounding the scanning range 19 of the ion beam 12 is disposed in this manner, and the groove 20 is disposed in the magnetic gap 56, whereby the magnetic field measured by the ion beam measuring device 10 can be made independent of the scanning position of the ion beam 12. For example, when the amount of beam current of the ion beam 12 during scanning is constant, the magnetic flux generated in the groove 20 becomes constant irrespective of the scanning position.

Further, in order to reduce the leakage of the magnetic flux from the magnetic gap 56, it is preferable that the magnetic gap 56 is narrow. Therefore, it is preferable to make the shape of the groove 20 suitable for such a narrow magnetic gap 56. For this reason, for example, in the groove 20, the dimension perpendicular to the in-plane direction (the direction transverse to the magnetic gap 56) may be larger than the dimension of the in-plane direction of the end surface 58 (or the end surface 60) of the magnetic body 52. small.

In an embodiment of the ion beam measuring device 10 shown in Fig. 2, the arithmetic processing unit 44 may be configured to receive a scan indicating the ion beam 12 from an ion beam scanning control unit (not shown) for scanning the ion beam 12. The location of the scan location information input. The arithmetic processing unit 44 can specifically obtain the ion beam scanning position of the first detection signal S1 by correlating the ion beam scanning position information at a certain time with the first detection signal S1 at that time. In this way, the scanning position in which the ion beam 12 is varied can be obtained.

However, the optical components associated with the ion beam metrology apparatus 10 (eg, The groove 20) may be contaminated by contaminating particles such as ions contained in the ion beam or exhaust gas from the substance irradiated with the ion beam. The optical characteristics such as transmittance or reflectance of the contaminated optical element are deteriorated, which may affect the measurement.

Therefore, the ion beam measuring device 10 can be provided with a protection means for protecting the optical element from contamination. The means of protection may be configured to apply an electrical repulsion to the contaminating particles while preventing the contaminating particles from approaching the optical element to be protected. Further, the protection means may be configured to adsorb the contaminating particles by causing electric attraction to act on the contaminating particles. Protection means may include physical barriers placed adjacent to the optical element to be protected.

Fig. 4 is a view showing an example of a protection device 70 used in the ion beam measuring device 10 according to the embodiment of the present invention. The protection device 70 includes a bias power source 72 for applying a potential to at least one of the incident portion 28 and the emission portion 30 of the groove 20. At this time, at least one of the incident portion 28 and the emission portion 30 of the groove 20 is, for example, a transparent member having conductivity (for example, a transparent conductive film). The potential given to the groove 20 is set such that an electric repulsion force acts on the contaminating particles around the groove 20. For example, to prevent cations from approaching the trench 20, the bias supply 72 imparts a positive potential to the trench 20. Thus, it is possible to prevent the contaminating particles having the potential and the common electric charge from being given to the groove 20 from coming close to each other, and to prevent the contaminating particles from adhering to the groove 20. The decrease in the transmittance of the surface of the groove 20 can be suppressed.

The protection device 70 can be provided with a cylindrical member 74 that surrounds the slot 20. The tubular member 74 is disposed along the path of the laser light 32 measured through the slot 20. The cylindrical member 74 is formed of a non-magnetic material similarly to the groove 20. Cylindrical structure The piece 74 can also act as a physical barrier to the contaminating particles disposed adjacent the trough 20. In addition, when the ion beam measuring device 10 has the magnetic circuit 50, the magnetic body 52 can penetrate the cylindrical member 74.

The protection device 70 may further include a protection member 80 for preventing contamination particles from entering the inside of the tubular member 74, and a bias power source 82 for imparting a potential to the protection member 80. The protective member 80 is disposed at the inlet portion 76 or the outlet portion 78 of the cylindrical member 74. The protective member 80 is, for example, a wire mesh provided to the transmissive portion 76. Alternatively, the protective member 80 may be a transparent member having a transparent conductive film. The bias power source 82 is connected to the wire mesh or the transparent conductive film of the protective member 80 in such a manner as to impart a potential.

When the protective member 80 is, for example, a wire mesh, the potential of the protective member 80 is applied to the protective member 80 by the bias power source 82 to apply electric attraction to the contaminating particles. For example, in order to direct the cations to the protective member 80, the bias power source 82 gives the protective member 80 a negative potential. Thus, the contaminating particles having the electric charge opposite to the potential given to the protective member 80 are adsorbed to the protective member 80, and the contaminating particles are prevented from entering the cylindrical member 74 and the contaminating particles are attached to the groove 20. Alternatively, the potential of the protective member 80 may be applied to the protective member 80 based on the bias power source 82, so that the repulsion force may be applied to the contaminating particles that are approaching the protective member 80.

The optical element to be protected by the protection device 70 is not limited to the slot 20. The protection device 70 can likewise protect any optical element used to measure the laser light 32 or the reference laser light 38. Thereby, the protection device 70 can, for example, protect at least one of the slot 20, the beam splitter 40 or the mirror 42. When the optical system for measuring laser light 32 or reference laser light 38 comprises a lens The protective device 70 can protect the lens. Further, the protection device 70 can protect the window portion provided on the wall surface of the processing chamber 16. The window portion may be a window for causing the measurement laser light 32 or the reference laser light 38 to be incident from the outside of the processing chamber 16 to the inside, or may be for causing the measurement laser light 32 or the reference laser light 38 to be emitted from the inside of the processing chamber 16. To the external window. The window portion may also be a window for observing the inside of the processing chamber 16 from the outside.

Hereinabove, the present invention has been described based on the embodiments. It will be understood by those skilled in the art that the present invention is not limited to the above embodiments, and various modifications can be made and various modifications can be made, and such modifications are also included in the scope of the present invention.

10‧‧‧Ion beam measuring device

12‧‧‧Ion Beam

14‧‧‧Ion beam path

19‧‧‧ scan range

20‧‧‧ slots

22‧‧‧Laser light source

24‧‧‧Detector

52‧‧‧ magnetic body

56‧‧‧Magnetic gap

70‧‧‧protection device

Fig. 1 is a view showing an ion beam measuring device according to an embodiment of the present invention.

Fig. 2 is a view showing an ion beam measuring device according to an embodiment of the present invention.

Fig. 3 is a view showing a magnetic circuit used in a measuring device according to an embodiment of the present invention.

Fig. 4 is a view showing an example of a protection device for an ion beam measuring device according to an embodiment of the present invention.

10‧‧‧Ion beam measuring device

12‧‧‧Ion Beam

14‧‧‧Ion beam path

16‧‧‧Processing room

18‧‧‧Processed objects

19‧‧‧ scan range

20‧‧‧ slots

22‧‧‧Laser light source

24‧‧‧Detector

26‧‧‧Internal space

28‧‧‧Injection

30‧‧‧Exporting Department

32(33)‧‧‧Measure laser light (incident laser light)

32(34)‧‧‧Measure laser light (transmission laser light)

36‧‧‧beam optical system

38‧‧‧Reference laser light

40‧‧‧beam splitter

42‧‧‧Mirror

44‧‧‧Operation Processing Unit

Claims (7)

An ion beam measuring device comprising: a groove disposed adjacent to an ion beam path and accommodating at least an alkali metal; a light source for irradiating the spin-polarized laser light of the alkali metal atom to the groove; and detecting a device for detecting laser light that has transmitted through the aforementioned grooves. The ion beam measuring device according to claim 1, further comprising a magnetic body disposed around the ion beam path to form a magnetic gap, wherein the groove is provided in the magnetic gap. The ion beam measuring device according to claim 2, wherein the magnetic body is disposed around a scanning range of the ion beam. The ion beam measuring device according to any one of claims 1 to 3, further comprising a protection means for protecting the groove from contamination. The ion beam measuring device according to any one of claims 1 to 4, wherein the groove is provided in a processing chamber for irradiating an ion beam to a subject. An ion implantation apparatus comprising the ion beam measuring apparatus according to any one of claims 1 to 5. An ion beam measuring method, comprising: supplying an ion beam; The magnetic field from the aforementioned ion beam is measured using an optical pump magnetometer.