TW201330953A - Sintering type conductive paste - Google Patents

Sintering type conductive paste Download PDF

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TW201330953A
TW201330953A TW101145237A TW101145237A TW201330953A TW 201330953 A TW201330953 A TW 201330953A TW 101145237 A TW101145237 A TW 101145237A TW 101145237 A TW101145237 A TW 101145237A TW 201330953 A TW201330953 A TW 201330953A
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silver powder
silver
conductive paste
powder
sintered
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TWI690379B (en
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Toshikazu Matsuyama
Keisuke Miyanohara
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Mitsui Mining & Smelting Co
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06Metallic powder characterised by the shape of the particles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00Making metallic powder or suspensions thereof
    • B22F9/16Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/04Making non-ferrous alloys by powder metallurgy
    • C22C1/0466Alloys based on noble metals
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/10Alloys containing non-metals
    • C22C1/1026Alloys containing non-metals starting from a solution or a suspension of (a) compound(s) of at least one of the alloy constituents
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Conductive Materials (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

Provided is a micro-particle silver powder which can copy with thinning of electrode or circuit, which is a novel silver powder having a low thermal shrinkage rate at 500 DEG C. The present invention provides a sintering type conductive paste characterized by containing 30 ppm to 1000 ppm of Si.

Description

燒結型導電性膠用銀粉 Silver powder for sintered conductive paste

本發明係關於適用在燒結型導電性膠之銀粉,當中尤其關於可適用在太陽能電池電極用的燒結型導電性膠之銀粉。 The present invention relates to a silver powder suitable for use in a sintered conductive paste, and particularly relates to a silver powder which can be applied to a sintered conductive paste for a solar cell electrode.

導電性膠為導電性填充材分散於含有樹脂黏合劑與溶劑之媒液中之流動性組成物,係廣泛使用於電氣電路的形成和陶瓷電容器之外部電極的形成等。 The conductive paste is a fluid composition in which a conductive filler is dispersed in a vehicle containing a resin binder and a solvent, and is widely used for formation of an electric circuit and formation of an external electrode of a ceramic capacitor.

此類導電性膠係有藉由樹脂的硬化來壓著導電性填充材以確保導通之樹脂硬化型,以及藉由高溫燒結使有機成分揮發並燒結導電性填充材以確保導通之燒結型。 Such a conductive adhesive is a resin-hardened type in which a conductive filler is pressed by curing of a resin to ensure conduction, and a sintered type in which an organic component is volatilized by high-temperature sintering and a conductive filler is sintered to ensure conduction.

當中,燒結型導電性膠一般是導電性填充材(金屬粉末)與玻璃粉分散於有機媒液中而成之膏狀組成物,藉由在400至800℃中燒結使有機媒液揮發,復燒結導電性填充材以確保導通。此時,玻璃粉具有將該導電膜黏著於基板之作用,有機媒液之作用為作為用以使金屬粉末及玻璃粉成為可印刷之有機液體介質。 Among them, the sintered conductive paste is generally a paste composition in which a conductive filler (metal powder) and a glass frit are dispersed in an organic vehicle, and the organic vehicle liquid is volatilized by sintering at 400 to 800 ° C. The conductive filler is sintered to ensure conduction. At this time, the glass frit has a function of adhering the conductive film to the substrate, and the organic vehicle serves as an organic liquid medium for making the metal powder and the glass frit a printable.

此般燒結型導電性膠中所使用之銀粉,例 如在專利文獻1中,揭示有一種將含有還原劑之水溶液添加於含有銀粒子之水性反應系統以使銀粒子還原析出,藉此得到於500℃時的熱收縮率為5至15%、於600℃時的熱收縮率為10至20%、平均粒徑D50為5μm以下、敲實密度為2g/cm3以上、BET比表面積為5m2/g以下之球狀銀粉。 In the silver powder used in the sintered conductive paste, for example, Patent Document 1 discloses that an aqueous solution containing a reducing agent is added to an aqueous reaction system containing silver particles to reduce and precipitate silver particles, thereby obtaining 500. The heat shrinkage ratio at ° C is 5 to 15%, the heat shrinkage ratio at 600 ° C is 10 to 20%, the average particle diameter D 50 is 5 μm or less, the tap density is 2 g/cm 3 or more, and the BET specific surface area is 5 m. Spherical silver powder below 2 /g.

專利文獻2中,提出一種於410℃時的熱收縮率為5至15%,較佳係進一步於500℃時的熱收縮率為10至20%之銀粉,具體而言該平均粒徑D50為2μm以下。 Patent Document 2 proposes a silver powder having a heat shrinkage ratio of from 4 to 15% at 410 ° C, preferably from 10 to 20% at 500 ° C, specifically, the average particle diameter D 50 It is 2 μm or less.

對於燒結型導電性膠中所使用之銀粉,近年來為了對應電極或電路的細線化,一般係要求微粒且具有尖銳(sharp)的粒度分布之銀粉,因而提出對應於此之嶄新技術。 In recent years, in order to reduce the thickness of the electrode or the circuit, the silver powder used in the sintered conductive paste is generally a silver powder which requires fine particles and has a sharp particle size distribution. Therefore, a new technology corresponding to this has been proposed.

例如在專利文獻3(日本特開2005-48237號公報)中,提出有一種將鹼或錯合物添加於含有銀鹽之水溶液,在生成含有銀錯合物之水溶液後添加氫醌等之多元酚作為還原劑,以使0.6μm以下之經微粒化的高分散性球狀銀粉還原析出,藉此得到微粒銀粉,係提出獲得具有更接近於粉粒凝聚少之單分散的分散性之微粒銀粉之方法。 For example, in the patent document 3 (JP-A-2005-48237), it is proposed to add an alkali or a complex compound to an aqueous solution containing a silver salt, and to add a hydroquinone or the like to the aqueous solution containing the silver complex compound. The phenol is used as a reducing agent to reduce and precipitate the micronized highly dispersible spherical silver powder of 0.6 μm or less, thereby obtaining fine silver powder, and it is proposed to obtain a fine particle silver powder having a monodisperse dispersity which is closer to the aggregation of the powder particles. The method.

此外,在專利文獻4(日本特開2010-70793號公報)中,提出有一種混合硝酸銀水溶液與氨水並使其反應而得到氨銀錯合物水溶液,在成為種核之粒子及亞胺化合物的存在下,混合該氨銀錯合物水溶液與還原劑水溶液,以使銀粒子還原析出,藉此得到平均粒徑為0.1μm以上且未達1μm,粒度分布尖銳且具有高分散性之球狀銀粉 之方法。 Further, in Patent Document 4 (JP-A-2010-70793), it is proposed to mix an aqueous solution of silver nitrate with ammonia water and react it to obtain an aqueous solution of an ammonia silver complex, which is a particle of a seed nucleus and an imine compound. In the presence of the ammonia silver complex solution aqueous solution and the reducing agent aqueous solution, the silver particles are reduced and precipitated, thereby obtaining spherical silver powder having an average particle diameter of 0.1 μm or more and less than 1 μm, and having a sharp particle size distribution and high dispersibility. The method.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

專利文獻1:日本特開2006-2228號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2006-2228

專利文獻2:日本特開2007-270334號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2007-270334

專利文獻3:日本特開2005-48237號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 2005-48237

專利文獻4:日本特開2010-70793號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 2010-70793

導電性膠係因應所塗佈之基底或所使用之用途不同而在不同溫度下進行燒結,當在燒結溫度下導電性填充材,亦即銀粉的熱收縮率與基底之配合性差時,基底(基板)與銀膜之間容易產生剝離或是產生翹曲或變形、龜裂等缺失。尤其當銀粉越為微粒則熱收縮率越有增大之傾向,使得基底(基板)與銀粉之間的熱收縮動作的差變大,而更容易產生基底(基板)與銀膜之間的剝離、翹曲或變形、龜裂等。 The conductive adhesive is sintered at different temperatures depending on the substrate to be coated or the application used. When the conductive filler at the sintering temperature, that is, the thermal shrinkage of the silver powder is inferior to the substrate, the substrate ( There is a possibility that peeling or warpage, deformation, cracking, or the like is likely to occur between the substrate and the silver film. In particular, when the silver powder is fine particles, the heat shrinkage ratio tends to increase, so that the difference in heat shrinkage action between the substrate (substrate) and the silver powder becomes large, and peeling between the substrate (substrate) and the silver film is more likely to occur. , warping or deformation, cracking, etc.

結晶矽型太陽能電池,一般是在矽基板(p型)上形成n型擴散層來形成pn接合,並於矽基板(p型)的內面側介置著氧化膜並積層內面電極,並且在n型擴散層的感光面側(表面側)積層抗反射膜,同時將銀膏印刷及燒結而形成銀電極之構成,考量到矽基板的熱破壞,一般是在500℃附近燒結銀膏來形成電極。 In a crystalline germanium type solar cell, an n-type diffusion layer is formed on a tantalum substrate (p type) to form a pn junction, and an oxide film is interposed on the inner surface side of the tantalum substrate (p type) and an inner surface electrode is laminated, and The anti-reflection film is laminated on the photosensitive surface side (surface side) of the n-type diffusion layer, and the silver paste is printed and sintered to form a silver electrode. Considering the thermal destruction of the ruthenium substrate, the silver paste is generally sintered at around 500 ° C. An electrode is formed.

因此,本發明係提供一種可對應電極或電路的細線化之微粒銀粉,係於500℃時的熱收縮率低並且可抑制基底(基板)與銀粉之間之熱收縮動作的差之嶄新銀粉,而為可適用作為在燒結型導電性膠中的導電性填充材之銀粉,當中尤其適用作為在太陽能電池電極用的燒結型導電性膠中的導電性填充材之銀粉。 Accordingly, the present invention provides a fine-grained particulate silver powder which can be used for an electrode or a circuit, which is a new silver powder which has a low heat shrinkage rate at 500 ° C and can suppress a difference in heat shrinkage action between a substrate (substrate) and silver powder. Further, it is a silver powder which is applicable as a conductive filler in a sintered conductive paste, and is particularly suitable as a silver powder of a conductive filler in a sintered conductive paste for a solar cell electrode.

本發明係提出一種燒結型導電性膠用銀粉,其特徵係含有矽(Si)30ppm至1000ppm。 The present invention provides a silver powder for a sintered conductive paste characterized by containing cerium (Si) of 30 ppm to 1000 ppm.

本發明所提出之燒結型導電性膠用銀粉,藉由添加矽(Si)化合物而含有矽(Si)30ppm至1000ppm,藉此不僅可製作微粒銀粉,並且可使500℃時的收縮率為15.0%以下。因此可抑制基底(基板)與銀粉之熱收縮動作的差,所以可適用作為燒結型導電性膠中所使用之導電性填充材。當中,由於可抑制於500℃時的收縮率,故特別適用作為太陽能電池電極用的燒結型導電性膠中所使用之導電性填充材。惟本發明所提出之燒結型導電性膠用銀粉的用途並不限定於太陽能電池電極用。 The silver powder for a sintered conductive paste of the present invention contains cerium (Si) 30 ppm to 1000 ppm by adding a cerium (Si) compound, whereby not only fine silver powder can be produced, but also a shrinkage ratio of 15.0 at 500 ° C can be obtained. %the following. Therefore, the difference in heat shrinkage operation between the substrate (substrate) and the silver powder can be suppressed, so that it can be applied as a conductive filler used in the sintered conductive paste. Among them, since the shrinkage ratio at 500 ° C can be suppressed, it is particularly suitable as a conductive filler used for a sintered conductive paste for a solar cell electrode. However, the use of the silver powder for a sintered conductive paste proposed by the present invention is not limited to the use of a solar cell electrode.

以下根據用以實施本發明之形態例來說明本發明,但本發明並不限定於以下所說明之實施形態。 Hereinafter, the present invention will be described based on examples of the embodiments of the present invention, but the present invention is not limited to the embodiments described below.

<本銀粉> <本银粉>

本實施形態之燒結型導電性膠用銀粉(以下稱為「本銀粉」),該特徵在於含有矽(Si)。 The silver powder for a sintered conductive paste of the present embodiment (hereinafter referred to as "the present silver powder") is characterized by containing bismuth (Si).

以下進一步說明本發明之特徵。 Features of the invention are further described below.

(矽含量) (矽 content)

本銀粉較佳係含有矽(Si)30ppm至1000ppm。若在該範圍內含有矽,則不僅可將BET比表面積控制在0.8m2/g至3.0m2/g的範圍,更可使500℃時的收縮率為15.0%以下。 The silver powder preferably contains cerium (Si) of 30 ppm to 1000 ppm. When cerium is contained in this range, not only the BET specific surface area can be controlled in the range of 0.8 m 2 /g to 3.0 m 2 /g, but also the shrinkage ratio at 500 ° C can be made 15.0% or less.

從該觀點來看,本銀粉之矽(Si)含量更佳為40ppm以上或700ppm以下,當中特佳為50ppm以上或600ppm以下。 From this point of view, the content of bismuth (Si) in the present silver powder is more preferably 40 ppm or more or 700 ppm or less, and particularly preferably 50 ppm or more or 600 ppm or less.

調整本銀粉之矽(Si)含量之方法,可列舉出調整製造過程中所添加之矽化物的種類與量之方法。 The method of adjusting the content of the bismuth (Si) of the present silver powder may be exemplified by adjusting the type and amount of the hydrazine compound added during the production process.

此外,本銀粉之矽(Si)含量為含有於銀粉粒子的內部、或是物理或化學吸附於粒子表面之矽(Si)的含量。具體而言,為使以純水洗淨銀粉後之濾液的傳導率成為40μS/cm以下而充分地洗淨後所殘存之矽(Si)的量。藉由此般洗淨所去除之矽(Si),由於不具有燒結抑制劑的功能而無益於銀粉的熱收縮率,因此須從本銀粉之矽(Si)含量中去除。 Further, the content of bismuth (Si) in the present silver powder is the content of cerium (Si) contained in the interior of the silver powder particles or physically or chemically adsorbed on the surface of the particles. Specifically, the amount of cerium (Si) remaining after sufficient washing of the filtrate after the silver powder is washed with pure water is 40 μS/cm or less. The ruthenium (Si) removed by this cleaning does not have the function of the sintering inhibitor and does not contribute to the heat shrinkage rate of the silver powder, and therefore must be removed from the bismuth (Si) content of the silver powder.

因此,本銀粉之矽(Si)含量為使以純水洗淨銀粉後之濾液的傳導率成為40μS/cm以下充分地洗淨後,以測定裝置所測定之矽(Si)的含量。 Therefore, the content of cerium (Si) in the silver powder is a content of cerium (Si) measured by a measuring apparatus after the conductivity of the filtrate obtained by washing the silver powder with pure water is sufficiently washed at 40 μS/cm or less.

(比表面積) (specific surface area)

本銀粉之BET比表面積(SSA)較佳為0.8m2/g至3.0m2/g。 The BET specific surface area (SSA) of the present silver powder is preferably from 0.8 m 2 /g to 3.0 m 2 /g.

若本銀粉之BET比表面積為0.8m2/g至3.0m2/g,則能為可適用作為燒結型導電性膠的導電性填充材之銀粉,其中特別為可適用作為太陽能電池電極用燒結型導電性膠的導電性填充材之銀粉,而可對應電極或電路的細線化。 When the BET specific surface area of the present silver powder is from 0.8 m 2 /g to 3.0 m 2 /g, it can be a silver powder which is applicable as a conductive filler of a sintered conductive paste, and particularly suitable for use as a sintered conductive material for a solar cell electrode. The silver powder of the conductive filler of the gel, which can correspond to the thinning of the electrode or the circuit.

因此,從該觀點來看,本銀粉之BET比表面積較佳為0.8m2/g以上或3.0m2/g以下,當中更佳為1.0m2/g以上或2.8m2/g以下,當中特佳為2.65m2/g以下。 Therefore, from this viewpoint, the BET specific surface area of silver powder is preferably 0.8m2 / g or more than 3.0m 2 / g or less, which is more preferably 1.0m 2 / g or more than 2.8m 2 / g or less, which Laid Preferably, it is 2.65 m 2 /g or less.

此外,調整BET比表面積之方法可列舉出調整製造過程中所添加之矽化物的種類與量、或是調整硝酸銀水溶液的濃度或液量、或是調整還原劑溶液的濃度或液量之方法。 Further, the method of adjusting the BET specific surface area may be a method of adjusting the type and amount of the telluride added during the production process, or adjusting the concentration or amount of the silver nitrate aqueous solution, or adjusting the concentration or the amount of the reducing agent solution.

(粒子形狀) (particle shape)

本銀粉之粒子形狀並無特別限定,但較佳為球形狀或類球形狀。此外,作為導電性膠用途者,較佳為將球形狀粒子或類球形狀的粒子加工成薄片狀粒子者,此外,較佳為前述球形狀粒子或類球形狀的粒子與該薄片狀粒子之混合品。 The particle shape of the present silver powder is not particularly limited, but is preferably a spherical shape or a spherical shape. Further, as the conductive paste user, it is preferred to process the spherical particles or the spherical particles into flaky particles, and it is preferable that the spherical particles or the spherical particles and the flaky particles are used. Mixture.

(D50) (D50)

本銀粉之D50,亦即藉由雷射繞射散射式粒度分布測定法所測得之體積基準粒度分布的D50較佳為 0.50μm至1.50μm。 The D50 of the silver powder, that is, the D50 of the volume-based particle size distribution measured by the laser diffraction scattering particle size distribution measurement is preferably 0.50 μm to 1.50 μm.

若本銀粉之D50為0.50μm至1.50μm,則在印刷導電性膠時可容易地形成細線。 If the D50 of the present silver powder is from 0.50 μm to 1.50 μm, fine lines can be easily formed when the conductive paste is printed.

因此,從該觀點來看,本銀粉之D50較佳為0.50μm以上或1.50μm以下,當中更佳為0.70μm以上或1.20μm以下,當中特佳為0.90μm以上。 Therefore, from this viewpoint, the D50 of the present silver powder is preferably 0.50 μm or more or 1.50 μm or less, more preferably 0.70 μm or more or 1.20 μm or less, and particularly preferably 0.90 μm or more.

調整D50時可列舉出調整製造過程中所添加之矽化物的種類與量、或是調整硝酸銀水溶液的濃度或液量、或是調整還原劑溶液的濃度或液量之方法。 The D50 may be adjusted by adjusting the type and amount of the telluride added during the manufacturing process, or adjusting the concentration or amount of the silver nitrate aqueous solution, or adjusting the concentration or amount of the reducing agent solution.

(熱收縮率) (heat shrinkage rate)

本銀粉係如前述般,從與太陽能電池中所使用之矽基板的黏著性之觀點來看,具體而言,從不會因在500℃中進行燒結時所產生之銀粉的收縮而產生矽基板的剝離等之黏著性之觀點來看,本銀粉於500℃時的收縮率較佳為15.0%以下,當中更佳為4.0%以上或14.0%以下,當中特佳為12.0%以下。 As described above, the present silver powder has a ruthenium substrate which is not caused by shrinkage of silver powder which is generated when sintering is performed at 500 ° C from the viewpoint of adhesion to a ruthenium substrate used in a solar cell. The shrinkage ratio of the present silver powder at 500 ° C is preferably 15.0% or less, more preferably 4.0% or more or 14.0% or less, and particularly preferably 12.0% or less.

本銀粉中,可藉由調整製造過程中所添加之矽化物的種類與量,來調整於500℃時之銀粉的收縮率。 In the present silver powder, the shrinkage ratio of the silver powder at 500 ° C can be adjusted by adjusting the type and amount of the telluride added during the production process.

<製法> <Method>

接著說明本銀粉之較佳的製造方法。 Next, a preferred method of producing the present silver powder will be described.

本銀粉之製造方法的一例,可列舉出在於硝酸銀等銀溶液添加還原劑之前或同時加入矽化物並還原之方法。 An example of the method for producing the present silver powder is a method in which a telluride is added and reduced before or after a reducing agent is added to a silver solution such as silver nitrate.

具體而言,可在將錯合劑添加於硝酸銀等 之銀水溶液後,於添加還原劑之前或同時加入矽化物並進行攪拌,接著可視需要添加分散劑,一邊攪拌一邊使其反應使銀粒子還原析出,然後進行過濾、洗淨、乾燥,而製造出本銀粉。 Specifically, the wrong agent can be added to silver nitrate or the like. After the silver aqueous solution is added, the hydrazine compound is added and stirred before or after the addition of the reducing agent, and then a dispersing agent may be added as needed, and the silver particles are reduced and precipitated while stirring, and then filtered, washed, and dried to produce This silver powder.

在此,矽化物除了矽酸鈉或矽酸鉀等之矽酸鹽之外,亦可列舉出矽烷偶合劑等之矽化物。當中從微粒化及熱收縮率降低的效果之觀點來看,較佳並非二氧化矽(SiO2),而是矽酸鈉或矽酸鉀等之矽酸鹽。 Here, the telluride may be a sulfonate such as a decane coupling agent or the like in addition to a citrate such as sodium citrate or potassium citrate. From the viewpoint of the effect of reducing the atomization and the heat shrinkage rate, it is preferably not cerium oxide (SiO2) but a ceric acid salt such as sodium citrate or potassium citrate.

此外,硝酸銀等之銀水溶液,可使用含有硝酸銀、銀鹽錯合物及銀中間體中的任一種之水溶液或漿液。 Further, as the aqueous silver solution such as silver nitrate, an aqueous solution or slurry containing any one of silver nitrate, a silver salt complex and a silver intermediate can be used.

此外,錯合劑例如可列舉出氨水、銨鹽、螯合化合物等。 Further, examples of the complexing agent include ammonia water, an ammonium salt, a chelate compound, and the like.

還原劑例如可列舉出含有下列化合物之水溶液,該化合物有:抗壞血酸、亞硫酸鹽、烷醇胺、雙氧水、甲酸、甲酸銨、甲酸鈉、乙二醛、酒石酸、次亞磷酸鈉、氫化硼金屬鹽、二甲基胺硼烷、肼、肼化合物、氫醌、五倍子酚(pyrogallol)、葡萄糖、沒食子酸、福馬林、無水亞硫酸鈉以及雕白粉(rongalite)等。 Examples of the reducing agent include aqueous solutions containing ascorbic acid, sulfite, alkanolamine, hydrogen peroxide, formic acid, ammonium formate, sodium formate, glyoxal, tartaric acid, sodium hypophosphite, and boron hydride metal salts. , dimethylamine borane, hydrazine, hydrazine compound, hydroquinone, pyrogallol, glucose, gallic acid, formalin, anhydrous sodium sulfite, and rongalite.

分散劑例如可列舉出脂肪酸、脂肪酸鹽、界面活性劑、有機金屬、螯合劑、保護膠體等。 Examples of the dispersant include a fatty acid, a fatty acid salt, a surfactant, an organic metal, a chelating agent, a protective colloid, and the like.

<用途> <Use>

本銀粉乃適合作為導電性膠用,尤其適合作為燒結型導電性膠用銀粉。 The silver powder is suitable for use as a conductive paste, and is particularly suitable as a silver powder for a sintered conductive paste.

燒結型導電性膠,例如可將本銀粉與玻璃粉一同混合於有機媒液中而調製。 The sintered conductive paste can be prepared, for example, by mixing the present silver powder with a glass frit in an organic vehicle.

此時,玻璃粉例如可列舉出鉛硼矽酸玻璃或是鋅硼矽酸等之無鉛玻璃。 In this case, examples of the glass frit include lead-free borosilicate glass or lead-free glass such as zinc borosilicate.

此外,樹脂黏合劑例如可使用任意的樹脂黏合劑。較佳係採用含有例如選自環氧樹脂、聚酯樹脂、矽樹脂、脲樹脂、丙烯酸系樹脂、纖維素樹脂的1種以上之組成。 Further, as the resin binder, for example, any resin binder can be used. It is preferable to use, for example, one or more compositions selected from the group consisting of epoxy resins, polyester resins, enamel resins, urea resins, acrylic resins, and cellulose resins.

本銀粉於500℃時之銀粉的熱收縮率為15.0%以下,與太陽能電池中的矽基板之配合性極佳,所以使用本銀粉之導電性膠特佳係使用在太陽能電池的電極。惟並不限定於該用途。 The silver powder has a heat shrinkage ratio of 15.0% or less at 500 ° C, and is excellent in compatibility with a ruthenium substrate in a solar cell. Therefore, the conductive paste using the silver powder is preferably used in an electrode of a solar cell. However, it is not limited to this use.

<語句之說明> <Description of statement>

本說明書中,當表現為「X至Y」(X、Y為任意數字)時,在無特別限定時係包含「X以上Y以下」之涵義,且亦包含「較佳係大於X」或「較佳係小於Y」之涵義。 In the present specification, when the expression is "X to Y" (X, Y is an arbitrary number), the meaning of "X or more Y or less" is included when there is no particular limitation, and "the preferred system is greater than X" or " Preferably, it is less than the meaning of Y".

此外,當表現為「X以上」(X為任意數字)或「Y以下」(Y為任意數字)時,亦包含「較佳係大於X」或「較佳係未達Y」之涵義。 In addition, the meaning of "better than X" or "better than Y" is also included when the performance is "X" or above (X is any number) or "Y" (Y is any number).

(實施例) (Example)

以下係根據下列實施例及比較例來更詳細說明本發明。 Hereinafter, the present invention will be described in more detail based on the following examples and comparative examples.

關於在實施例及比較例中所得之銀粉,係 藉由以下所示之方法來評估諸特性。 Regarding the silver powder obtained in the examples and comparative examples, The characteristics were evaluated by the methods shown below.

(1)矽(Si)含量 (1) 矽 (Si) content

使用純水洗淨至傳導率成為40μS/cm以下,並使用Thermo Fisher Scientific公司製的ICP發光分光分析裝置(iCAP6300DUO),依據JIS H 1061:1998(銅及銅合金中的矽定量方法)的「8. ICP發光分光法」,對於如此洗淨得到之銀粉(樣本)測定矽含量。 It is washed with pure water to have a conductivity of 40 μS/cm or less, and an ICP emission spectroscopic analyzer (iCAP6300DUO) manufactured by Thermo Fisher Scientific Co., Ltd. is used according to JIS H 1061:1998 (a quantitative method for bismuth in copper and copper alloys). 8. ICP emission spectrometry, for the silver powder (sample) thus washed, the strontium content was measured.

(2)BET比表面積(SSA) (2) BET specific surface area (SSA)

使用QUANTACHROME公司製的比表面積測定裝置(Monosorb MS-18),依據JIS R 1626:1996(細微陶瓷粉體之依據氣體吸附BET法的比表面積測定方法)的「6.2流動法之(3.5)單點法」,而進行BET比表面積(SSA)的測定。此時係使用載體氣體之氦氣以及吸附質氣體之氮氣之混合氣體。 Using the specific surface area measuring device (Monosorb MS-18) manufactured by QUANTACHROME Co., Ltd., according to JIS R 1626:1996 (measurement method of specific surface area according to gas adsorption BET method of fine ceramic powder), "6.2 flow method (3.5) single point The BET specific surface area (SSA) was measured. In this case, a mixed gas of a helium gas of a carrier gas and nitrogen of an adsorbent gas is used.

(3)D50 (3) D50

將銀粉(樣本)0.2g放入於IPA50mL中並照射超音波(3分鐘)進行分散後,藉由日機裝公司製粒度分布測定裝置(Microtrac MT-3000EXII),來測定體積基準粒度分布的D50。 0.2 g of silver powder (sample) was placed in 50 mL of IPA and dispersed by irradiation with ultrasonic waves (3 minutes), and then D50 of volume-based particle size distribution was measured by a particle size distribution measuring apparatus (Microtrac MT-3000EXII) manufactured by Nikkiso Co., Ltd. .

(4)熱收縮率 (4) Heat shrinkage rate

使用銀粉(樣本)0.2g,施以493kg的加壓而成形為 3.8mm的圓柱狀。使用Seiko Instruments公司製的熱機械分析裝置(TMA)(EXSTAR6000TMA/SS6200),一邊施加98mN的加壓,一邊在空氣環境氣體中以5℃/分的升 溫溫度來測定該成形體於縱向上的線收縮率(%),以求取於500℃時的熱收縮率(%)。 0.2 g of silver powder (sample) was used, and 493 kg of pressure was applied to form 3.8mm cylindrical shape. Using a thermomechanical analyzer (TMA) (EXSTAR6000TMA/SS6200) manufactured by Seiko Instruments Co., Ltd., the line in the longitudinal direction of the molded body was measured at a temperature rise temperature of 5 ° C /min in an air atmosphere while applying a pressure of 98 mN. Shrinkage ratio (%) to obtain a heat shrinkage ratio (%) at 500 °C.

<實施例1> <Example 1>

將銀濃度400g/L的硝酸銀水溶液50mL溶解於純水1L,而調製硝酸銀水溶液,添加濃度25質量%的氨水60mL並攪拌,藉此得到氨銀錯合物水溶液。 50 mL of a silver nitrate aqueous solution having a silver concentration of 400 g/L was dissolved in 1 L of pure water to prepare a silver nitrate aqueous solution, and 60 mL of ammonia water having a concentration of 25% by mass was added thereto and stirred to obtain an aqueous ammonia silver complex solution.

接著將濃度5g/L的明膠水溶液8mL添加於30℃的氨銀錯合物水溶液並攪拌,復添加相對於銀為0.10質量%的矽酸鈉溶液(52至57%)(和光純藥工業公司製)並攪拌,並混合濃度11.9g/L的肼水溶液1L,藉此使銀粒子還原析出。 Next, 8 mL of a gelatin aqueous solution having a concentration of 5 g/L was added to an aqueous solution of ammonia silver complex at 30 ° C and stirred, and a sodium citrate solution (52 to 57%) was added in an amount of 0.10% by mass relative to silver (Wako Pure Chemical Industries Co., Ltd.) The mixture was stirred and mixed with 1 L of a 11.9 g/L hydrazine aqueous solution to thereby reduce and precipitate the silver particles.

接著將濃度5g/L的明膠水溶液8mL添加於還原後的漿液並攪拌後,過濾該銀粒子,並水洗至濾液的傳導率成為40μS/cm以下後,進行乾燥而得到銀粉(樣本)。 Next, 8 mL of a gelatin aqueous solution having a concentration of 5 g/L was added to the reduced slurry and stirred, and the silver particles were filtered, washed with water until the conductivity of the filtrate became 40 μS/cm or less, and then dried to obtain silver powder (sample).

<實施例2> <Example 2>

將矽酸鈉溶液的添加量變更為相對於銀為0.50質量%,除此之外其他與實施例1相同方式而得到銀粉(樣本)。 Silver powder (sample) was obtained in the same manner as in Example 1 except that the amount of the sodium citrate solution was changed to 0.50% by mass with respect to silver.

<實施例3> <Example 3>

將矽酸鈉溶液變更為矽酸鉀溶液(27至29%)(和光純藥工業公司製),並將該添加量變更為相對於銀為0.10質量%,除此之外其他與實施例1相同方式而得到銀粉(樣本)。 The sodium citrate solution was changed to a potassium citrate solution (27 to 29%) (manufactured by Wako Pure Chemical Industries, Ltd.), and the amount of the addition was changed to 0.10% by mass with respect to silver, and the other examples were the same as those in Example 1. Silver powder (sample) was obtained in the same manner.

<實施例4> <Example 4>

將矽酸鉀溶液的添加量變更為相對於銀為0.25質量%,除此之外其他與實施例3相同方式而得到銀粉(樣本)。 Silver powder (sample) was obtained in the same manner as in Example 3 except that the amount of the potassium citrate solution was changed to 0.25 mass% with respect to silver.

<實施例5> <Example 5>

將矽酸鉀溶液的添加量變更為相對於銀為0.50質量%,除此之外其他與實施例3相同方式而得到銀粉(樣本)。 Silver powder (sample) was obtained in the same manner as in Example 3 except that the amount of the potassium citrate solution was changed to 0.50% by mass with respect to silver.

<實施例6> <Example 6>

將矽酸鉀溶液的添加量變更為相對於銀為0.60質量%,除此之外其他與實施例3相同方式而得到銀粉(樣本)。 Silver powder (sample) was obtained in the same manner as in Example 3 except that the amount of the potassium citrate solution was changed to 0.60% by mass with respect to silver.

<實施例7> <Example 7>

將矽酸鈉溶液變更為矽烷偶合劑(有機矽烷,信越化學工業公司製KBM-603),並將該添加量變更為相對於銀為0.25質量%,除此之外其他與實施例1相同方式而得到銀粉(樣本)。 The sodium citrate solution was changed to a decane coupling agent (organic decane, KBM-603, manufactured by Shin-Etsu Chemical Co., Ltd.), and the amount of addition was changed to 0.25 mass% with respect to silver, and otherwise the same as in the first embodiment. And get silver powder (sample).

<比較例1> <Comparative Example 1>

除了不添加矽酸鈉溶液之外,其他與實施例1相同方式而得到銀粉(樣本)。 Silver powder (sample) was obtained in the same manner as in Example 1 except that sodium citrate solution was not added.

<比較例2> <Comparative Example 2>

將矽酸鈉溶液變更為硝酸銅(II)三水合物(和光純藥工業公司製),並將該添加量變更為相對於銀為0.02質量%,除此之外其他與實施例1相同方式而得到銀粉(樣本)。 The sodium citrate solution was changed to copper (II) nitrate trihydrate (manufactured by Wako Pure Chemical Industries, Ltd.), and the amount of addition was changed to 0.02% by mass based on silver, and the same manner as in Example 1 was used. And get silver powder (sample).

<比較例3> <Comparative Example 3>

將硝酸銅(II)三水合物(和光純藥工業公司製)之添加量變更為相對於銀為0.04質量%,除此之外其他與比較例2相同方式而得到銀粉(樣本)。 Silver powder (sample) was obtained in the same manner as in Comparative Example 2 except that the amount of addition of copper (II) nitrate trihydrate (manufactured by Wako Pure Chemical Industries, Ltd.) was changed to 0.04% by mass with respect to silver.

<比較例4> <Comparative Example 4>

將硝酸銅(II)三水合物(和光純藥工業公司製)之添加量變更為相對於銀為0.08質量%,除此之外其他與比較例2相同方式而得到銀粉(樣本)。 Silver powder (sample) was obtained in the same manner as in Comparative Example 2 except that the amount of addition of copper (II) nitrate trihydrate (manufactured by Wako Pure Chemical Industries, Ltd.) was changed to 0.08 mass% with respect to silver.

<比較例5> <Comparative Example 5>

將矽酸鈉溶液變更為碳酸氫鈉(和光純藥工業公司製),並將該添加量變更為相對於銀為0.10質量%,除此之外其他與實施例1相同方式而得到銀粉(樣本)。 Silver powder was obtained in the same manner as in Example 1 except that the sodium citrate solution was changed to sodium hydrogencarbonate (manufactured by Wako Pure Chemical Industries, Ltd.), and the amount of the addition was changed to 0.10% by mass based on the amount of silver. ).

實施例及比較例中所得之銀粉(樣本)均為球形狀。 The silver powder (sample) obtained in the examples and the comparative examples was in the form of a sphere.

從實施例及至目前為止所進行之試驗結果中,可得知當將矽化物添加於銀錯合物鹽溶液時,可使銀粉粒子形成微粒化。詳細機制雖仍不明瞭,但可考量如下:由於矽化物成為銀粒子成長的核而進行還原析出反應,所以可藉由控制核的數目來控制粒徑,而達到銀粉粒子的微粒化。 From the results of the examples and the tests conducted so far, it has been found that when the telluride is added to the silver complex salt solution, the silver powder particles can be formed into fine particles. Although the detailed mechanism is still unclear, it can be considered as follows: Since the telluride is a nucleus in which silver particles grow, a reduction precipitation reaction is carried out, so that the particle diameter can be controlled by controlling the number of nuclei to achieve atomization of the silver powder particles.

此外,可得知與不存在矽時或是銅進入時相比,當矽進入於銀粉粒子內部或表面時於500℃時的收縮率降低。 Further, it was found that the shrinkage ratio at 500 ° C when the crucible entered the inside or the surface of the silver powder particles was lower than when the crucible was not present or when the copper entered.

Claims (4)

一種燒結型導電性膠用銀粉,係含有矽(Si)30ppm至1000ppm。 A silver powder for a sintered conductive paste containing cerium (Si) in an amount of 30 ppm to 1000 ppm. 如申請專利範圍第1項所述之燒結型導電性膠用銀粉,其中,藉由BET法所測定之比表面積為0.8m2/g至3.0m2/g。 The silver powder for a sintered conductive paste according to claim 1, wherein the specific surface area measured by the BET method is from 0.8 m 2 /g to 3.0 m 2 /g. 如申請專利範圍第1或2項所述之燒結型導電性膠用銀粉,其中,藉由雷射繞射散射式粒度分布測定法所測得之體積基準粒度分布的D50為0.50μm至1.50μm。 The silver powder for a sintered conductive paste according to claim 1 or 2, wherein a D50 of a volume-based particle size distribution measured by a laser diffraction scattering particle size distribution measurement is 0.50 μm to 1.50 μm. . 如申請專利範圍第1至3項中任一項所述之燒結型導電性膠用銀粉,其中,於500℃時的收縮率為15.0%以下。 The silver powder for a sintered conductive paste according to any one of claims 1 to 3, wherein the shrinkage ratio at 500 ° C is 15.0% or less.
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