TW201326043A - Utilization of low-boiling compounds in chlorosilane processes - Google Patents

Utilization of low-boiling compounds in chlorosilane processes Download PDF

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TW201326043A
TW201326043A TW101133119A TW101133119A TW201326043A TW 201326043 A TW201326043 A TW 201326043A TW 101133119 A TW101133119 A TW 101133119A TW 101133119 A TW101133119 A TW 101133119A TW 201326043 A TW201326043 A TW 201326043A
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reactor
low
boiling
tcs
products
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TW101133119A
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Harald Seiler
Norbert Schladerbeck
Horst Mertsch
Frank Becker
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Evonik Degussa Gmbh
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • C01B33/1071Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • C01B33/10763Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention provides a process for preparing trichlorosilane by reaction of metallurgical silicon and hydrogen chloride in a reactor at a temperature of 200 to 400 DEG C, which is characterized in that low-boiling by-products of the product gas are fed back into the reactor.

Description

低沸點化合物於氯矽烷製程中之用途 Use of low boiling point compounds in chlorodecane process

本發明係關於一種將包含低沸點副產物之所不欲的二次流(secondary stream)用於氯矽烷製程之方法。 This invention relates to a process for the use of unwanted secondary streams comprising low boiling by-products in a chlorodecane process.

首先,矽烷市場大幅成長,及再者,提高競爭力須儘可能減少廢料。因此,改良製程為工業努力的目標。 First of all, the decane market has grown substantially, and furthermore, it is necessary to reduce waste as much as possible to improve competitiveness. Therefore, improving the process is the goal of industrial efforts.

本發明中,使用以下縮寫: In the present invention, the following abbreviations are used:

在氯矽烷合成之後,製造純淨的矽烷產物(例如三氯矽烷)的工業慣用方法之一係蒸餾法。具有碳或DCS之所不欲的矽烷化合物導致產物品質較低及,在以前技術中,在許多情況中須被棄置。本發明中,亦將具有所不欲之矽烷化合物的此蒸餾流稱為“二次流(secondary stream)”。 One of the industrially accepted methods for producing pure decane products (e.g., trichloromethane) after chlorodecane synthesis is distillation. Undesirable decane compounds having carbon or DCS result in lower product quality and, in the prior art, must be disposed of in many cases. In the present invention, this distillation stream having an undesired decane compound is also referred to as a "secondary stream".

工業蒸餾設計通常由串接的至少3個塔所組成,其中,四氯化矽的蒸餾性二次流(於1013毫巴的沸點為57℃)藉蒸餾而與高沸點組份(例如,甲基三氯矽烷(於1013毫巴的沸點為66℃)、和低聚矽烷、及額外的三氯 矽烷(於1013毫巴的沸點為32℃))和低沸點組份(如,甲基二氯矽烷(於1013毫巴的沸點為42℃)、和三氯矽烷及二氯矽烷(於1013毫巴的沸點為8℃))一起被移出。二次流之利用具有高潛能。 The industrial distillation design usually consists of at least 3 columns connected in series, wherein the distillate secondary stream of ruthenium tetrachloride (57 ° C at a boiling point of 1013 mbar) is distilled with high boiling components (for example, A Trichloromethane (66 ° C boiling point at 1013 mbar), and oligononane, and additional trichloro Hydrane (32 ° C at 1013 mbar) and low boiling components (eg, methyl dichloromethane (42 ° C at 1013 mbar), and trichloromethane and dichloromethane (at 1013 mil) The boiling point of Ba is 8 ° C)) is removed together. The use of secondary flow has high potential.

WO 2007/101789揭示使用高沸點化合物,特別是二矽烷和二矽氧烷,其於藉矽在流化床反應器中的氫氯化反應製造氯矽烷時、多晶矽沉積時、蒸餾時和氯矽烷的半水解純化時形成。 WO 2007/101789 discloses the use of high boiling compounds, in particular dioxane and dioxane, in the production of chlorodecane by hydrochlorination in a fluidized bed reactor, in the deposition of polycrystalline germanium, in distillation and in chlorodecane. Formed by semi-hydrolysis purification.

瞭解高沸點化合物是指由矽、氯、和任意的氫、氧和碳所構成的分子,其沸點高於四氯矽烷(於1013毫巴為57℃)。 Understanding high boiling compounds refers to molecules composed of ruthenium, chlorine, and any hydrogen, oxygen, and carbon having a boiling point higher than tetrachloromethane (57 ° C at 1013 mbar).

WO 2009/029794揭示藉離子交換器,藉催化性歧化作用,利用合成的二氯矽烷副產物之改良的製程。但是,未揭示該製程的改良結果。但是,嫻於此技術者認為,該製程因為系統之複雜的歧化平衡而複雜化。 WO 2009/029794 discloses an improved process utilizing synthetic dichloromethane by-products by means of catalytic disproportionation by means of an ion exchanger. However, the improved results of the process have not been revealed. However, those skilled in the art believe that the process is complicated by the complex disproportionation balance of the system.

因此,本發明的目的係提出經改良且簡單的方法,其使用包含低沸點化合物的二次流,些微地改變根據以前技術之包含將製造三氯矽烷的流化床、移動床或固定床加以氫氯化之超純矽方法。 Accordingly, it is an object of the present invention to provide an improved and simple process which uses a secondary stream comprising a low boiling point compound and slightly alters the fluidized bed, moving bed or fixed bed in which trichloromethane is produced according to the prior art. Ultra-pure method for hydrochlorination.

本發明中,瞭解低沸點是指沸點低於四氯矽烷(於1013毫巴為57℃)之包含矽和氯的化合物之物質或物質混合物。這些物質或混合物亦包含矽與氯、氫、氧和/或 碳的化合物。 In the present invention, it is understood that a low boiling point means a substance or a mixture of substances containing a compound of ruthenium and chlorine having a boiling point lower than that of tetrachloromethane (57 ° C at 1013 mbar). These substances or mixtures also contain hydrazine and chlorine, hydrogen, oxygen and/or A compound of carbon.

訝異地發現,當包含低沸點化合物的二次流與冶金矽於200至400℃送回氫氯化反應器時,能夠利用包含低沸點副產物的二次流。此將低沸點副產物分解成製程技術中更有利或所欲的化合物。令人訝異地,亦存在於二次流中的三氯矽烷同時幾乎未被轉化,若有的話,亦為可忽略或小至趨近於零的TCS轉化率。此氫氯化反應幾乎未受影響。 Surprisingly, it has been found that when a secondary stream comprising a low boiling point compound and a metallurgical crucible are returned to the hydrochlorination reactor at 200 to 400 ° C, a secondary stream comprising low boiling by-products can be utilized. This decomposes the low boiling by-products into more desirable or desirable compounds in the process technology. Surprisingly, the trichloromethane present in the secondary stream is also almost unconverted, if any, to a negligible or as small as TCS conversion. This hydrochlorination reaction is hardly affected.

因此,本發明提出一種藉冶金矽與氯化氫在反應器中於溫度200至400℃反應而製造三氯矽烷之方法,其特徵在於將產物氣體的低沸點副產物送回反應器。 Accordingly, the present invention provides a process for producing trichloromethane by reacting metallurgical hydrazine with hydrogen chloride in a reactor at a temperature of from 200 to 400 ° C, characterized in that the low-boiling by-product of the product gas is returned to the reactor.

根據本發明之製程的優點在於,因低沸點副產物的分解結果,沒有二次流,或彼之較少量,出現於製程中並因此而實現三氯矽烷標的產物的較高產率。 An advantage of the process according to the invention is that, due to the decomposition of the low-boiling by-products, there is no secondary flow, or a smaller amount, which occurs in the process and thus achieves a higher yield of the product of the chloroform.

下文詳細說明本發明。 The invention is described in detail below.

產物流的低沸點副產物可以部分或全數送回反應器。 The low boiling by-products of the product stream can be returned to the reactor in part or in whole.

反應器產物氣體之蒸餾得到的二次流包括TCS和DCS或TCS和MHDCS之混合物。也可能有其他的低沸點化合物存在。 The secondary stream obtained by distillation of the reactor product gas comprises TCS and DCS or a mixture of TCS and MHDCS. Other low boiling compounds may also be present.

二次流可以蒸氣形式或液體形式添加至氣-固氯化反 應器。TCS/DCS可以,類似於TCS/MHDCS,以蒸氣形式自塔排放。藉HCl流中之蒸發作用或藉熱蒸發器,液體起始形式的副產物亦可以蒸氣形式供應。但是,由於氫氯化反應的強烈放熱結果,以蒸氣充份分佈的液體可以直接加在熱固體或熱反應器位置上。 The secondary stream can be added to the gas-solid chlorination in vapor form or in liquid form. The device. TCS/DCS can, like TCS/MHDCS, be discharged from the column in vapor form. The by-product of the liquid starting form can also be supplied in the form of a vapor by evaporation in the HCl stream or by means of a thermal evaporator. However, due to the strong exothermic nature of the hydrochlorination reaction, a liquid that is sufficiently vapor-distributed can be added directly to the hot solid or thermal reactor location.

根據本發明之方法中,所用反應器可為流化床反應器或震動流化反應器。這些反應器實現固體床中的高熱轉移以控制強烈放熱反應。亦佳者係具有低反應器直徑的固定床反應器,其中固定床反應器得以有效率地控溫。 In the process according to the invention, the reactor used may be a fluidized bed reactor or a vibrating fluidized reactor. These reactors achieve high heat transfer in the solid bed to control the intense exothermic reaction. Also preferred are fixed bed reactors having a low reactor diameter wherein the fixed bed reactor is efficiently temperature controlled.

通過反應器的期間內,一部分所不欲的低沸點化合物轉化成三氯矽烷標的產物和高沸點化合物(例如甲基三氯矽烷)。 During the passage through the reactor, a portion of the desired low boiling point compound is converted to the product of the target of trichloromethane and the high boiling point compound (e.g., methyltrichloromethane).

在反應之後的氯矽烷之蒸餾中,低沸點MHDCS和/或DCS化合物自產物混合物移出。這些低沸點副產物於之後送回反應器。這些可以較佳地為DCS,另較佳地為MHDCS,或MHDCS和DCS之混合物。已轉化成高沸點化合物的低沸點物最後與高沸點副產物於二次流中排放。 In the distillation of the chlorodecane after the reaction, the low boiling MHDCS and/or DCS compound is removed from the product mixture. These low boiling by-products are then returned to the reactor. These may preferably be DCS, further preferably MHDCS, or a mixture of MHDCS and DCS. The low boilers that have been converted to high boiling compounds are finally discharged in a secondary stream with high boiling by-products.

實例 Instance

在以下本發明的實例中,在配備直徑4公分玻璃熔塊的玻璃反應器中檢視添加至氫氯化流化床的低沸點二次流。 In the following examples of the invention, a low boiling secondary stream added to a hydrochlorinated fluidized bed was examined in a glass reactor equipped with a 4 cm diameter glass frit.

在所有的實例中,玻璃熔塊上方施以200克粒子尺寸為150至250微米的98%純度冶金矽。藉Bronkhorst提供 的質流調整器,以60標準升/小時的體積流率注入各氣體,藉此,氯化氫反應物氣體以氬稀釋。 In all of the examples, 200 grams of 98% pure metallurgical crucible having a particle size of 150 to 250 microns was applied over the glass frit. Provided by Bronkhorst The mass flow regulator was injected with each gas at a volume flow rate of 60 standard liters/hour, whereby the hydrogen chloride reactant gas was diluted with argon.

藉加熱和冷卻區將強烈放熱反應調整至典型選擇的溫度為320℃。 The intense exothermic reaction was adjusted by heating and cooling zones to a typical selected temperature of 320 °C.

排放的產物氣體經過濾並藉連線的氣相層析儀分析。本發明之實例中的反應條件相同。 The discharged product gas is filtered and analyzed by a gas chromatograph connected by a wire. The reaction conditions in the examples of the present invention are the same.

本發明之實例和比較例的結果概示於表1。藉以下的化學指數描述轉化率。 The results of the examples and comparative examples of the present invention are summarized in Table 1. The conversion rate is described by the following chemical index.

縮寫代表: The abbreviations represent:

比較例:無副產物循環之氫氯化反應 Comparative example: Hydrochlorination without recycle of by-products

欲與純氫氯化反應比較,首先未添加副產物地測定氫氯化反應(請參考表1)。HCl轉化率為99%時,氯化氫以約90%的高選擇率與冶金矽反應而形成三氯矽烷,縮寫為TCS。否則,基本上形成四氯化矽。 To compare with the pure hydrochlorination reaction, the hydrochlorination reaction was first determined without adding by-products (refer to Table 1). When the HCl conversion is 99%, hydrogen chloride reacts with metallurgical oxime at a high selectivity of about 90% to form trichloromethane, abbreviated as TCS. Otherwise, ruthenium tetrachloride is formed substantially.

實例1:於10體積%含量,與MHDCS之氫氯化反應 Example 1: Hydrochlorination with MHDCS at 10% by volume

如同比較例,但低沸點的二次流加至反應物氣體,即額外的10體積%反應物氣體,莫耳比為99:1的TCS:MHDCS混合物。低沸物以蒸氣形式添加。 As in the comparative example, a secondary stream of low boiling point was added to the reactant gas, i.e., an additional 10% by volume of reactant gas, a TCS:MHDCS mixture having a molar ratio of 99:1. The low boilers are added in the form of a vapor.

實驗中,所不欲的低沸點物MHDCS中之約25%轉化成高沸點MTCS。基於可忽略的TCS轉化率及維持HCl對於TCS的高選擇率,同時發現完全保留TCS物質的價值且氫氯化反應未對根據本發明之方法造成負面影響。 In the experiment, about 25% of the unwanted low boilers MHDCS were converted to high boiling MTCS. Based on negligible TCS conversion and maintaining a high selectivity of HCl for TCS, it was found that the value of the TCS species was completely retained and that the hydrochlorination reaction did not adversely affect the process according to the invention.

實例2:於10體積%含量,與DCS之氫氯化反應 Example 2: Hydrochlorination with DCS at 10% by volume

如同比較例,但10體積%的低沸點TCS:DCS二次流以莫耳比為99:1加至反應物氣體。低沸物以蒸氣形式添加。 As in the comparative example, a 10% by volume low boiling TCS:DCS secondary stream was added to the reactant gas at a molar ratio of 99:1. The low boilers are added in the form of a vapor.

所不欲的DCS組份中之84%轉化成TCS或STC。基於可忽略的TCS轉化率及維持HCl對於TCS的高選擇率,同時發現保留所欲的TCS產物且氫氯化反應未對根據本發明之方法造成負面影響。 84% of the unwanted DCS components were converted to TCS or STC. Based on negligible TCS conversion and maintaining a high selectivity of HCl for TCS, it was also found that retention of the desired TCS product and hydrochlorination did not adversely affect the process according to the invention.

Claims (3)

一種藉冶金矽與氯化氫在反應器中於溫度200至400℃反應而製造三氯矽烷之方法,其特徵在於將產物氣體的低沸點副產物送回反應器。 A process for producing trichloromethane by reacting metallurgical ruthenium with hydrogen chloride in a reactor at a temperature of from 200 to 400 ° C, characterized in that the low-boiling by-product of the product gas is returned to the reactor. 如申請專利範圍第1項之方法,其中所用反應器係流化床反應器或震動流化反應器。 The method of claim 1, wherein the reactor used is a fluidized bed reactor or a vibrating fluidized reactor. 如申請專利範圍第1項之方法,其中有低沸點副產物DCS和/或MHDCS存在。 The method of claim 1, wherein the low-boiling by-products DCS and/or MHDCS are present.
TW101133119A 2011-09-14 2012-09-11 Utilization of low-boiling compounds in chlorosilane processes TW201326043A (en)

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Publication number Priority date Publication date Assignee Title
US3704104A (en) * 1970-06-01 1972-11-28 Texas Instruments Inc Process for the production of trichlorosilane
DE102006009954A1 (en) 2006-03-03 2007-09-06 Wacker Chemie Ag Recycling of high-boiling compounds within a chlorosilane composite
DE112008002299T5 (en) 2007-08-29 2010-07-22 Dynamic Engineering, Inc., Sturgis Process for the preparation of trichlorosilane
US20120082609A1 (en) * 2010-10-01 2012-04-05 Mitsubishi Materials Corporation Method for producing trichlorosilane with reduced boron compound impurities

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