TW201318146A - 高壓發光二極體 - Google Patents

高壓發光二極體 Download PDF

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TW201318146A
TW201318146A TW100138435A TW100138435A TW201318146A TW 201318146 A TW201318146 A TW 201318146A TW 100138435 A TW100138435 A TW 100138435A TW 100138435 A TW100138435 A TW 100138435A TW 201318146 A TW201318146 A TW 201318146A
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light
emitting diode
high voltage
substrate
chips
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TWI434394B (zh
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Hui-Qing Feng
Cheng-Hong Li
wei-gang Zheng
xi-ming Pan
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Formosa Epitaxy Inc
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Priority to US14/490,682 priority patent/US9490409B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Abstract

本發明係關於一種高壓發光二極體，適用於發光二極體晶片陣列模組領域，透過其基板上具有18～25顆的發光二極體晶片交錯排列，以一個非矩陣的錯位佈置方式，使發光二極體晶片的側壁能得到較好的出光效果，而不再因為矩陣型排列而遭到遮蔽。透過此些調整，本發明之高壓發光二極體具有優化的發光效率。

Description

高壓發光二極體
    本發明係一種發光二極體，尤指一種具有非矩陣式交錯排列的發光二極體晶片之高壓發光二極體。
    由於近代石化能源逐漸匱乏，對節能產品需求日益擴大，因此發光二極體（LED）的技術有長足的進步。而在石油價格不穩定的條件之下，全球各個國家積極地投入節能產品的開發，將發光二極體應用於省電燈泡便是此一趨勢下的產物。此外，隨著發光二極體技術的進步，白光或其它顏色（例如：藍光）發光二極體的應用也逐漸廣泛。隨著發光二極體的技術日益成熟，應用的領域也越來越多。發光二極體在照明上的一些應用，包括住宅領域：壁燈、夜燈（這部分應用的亮度要求不高，因此是最早使用發光二極體光源的領域）、輔助照明燈、庭園燈、閱讀燈；設施領域：緊急指示燈，醫院用病床燈；商店領域：聚光燈，崁燈，桶燈，燈條；戶外領域：建築外觀、太陽能燈；以及燈光表演等。
    發光二極體除了由於耗電低、不含汞、壽命長、二氧化碳排放量低等優勢外，全球各國政府禁用汞的環保政策，也驅使研究人員投入白光發光二極體的研發與應用。在全球環保風潮方興未艾之際，被喻為綠色光源的發光二極體可符合全球的主流趨勢，如前所指，其已普遍應用於3C產品指示器與顯示裝置之上；而再隨著發光二極體生產良率的提高，單位製造成本也已大幅降低，因此發光二極體的需求持續增加。
    承前所述，此刻開發高亮度的發光二極體已成為各國廠商的研發重點，然而當前之發光二極體在應用設計上仍存在缺陷，使得發光效率無法達到最佳狀態。
    在實際應用上，發光二極體經常被組合為發光二極體陣列模組，其係將大量的發光二極體晶片佈置於基板上，藉由其數量上的優勢，以取得較好的發光效果；然而此種佈置方法，除了最常發生的散熱問題之外，如何再近一步提升出光效率，即為此領域中應當面對以及思考之課題。
    於過去技術中，如第一圖所示，係將發光二極體晶片佈置於大面積基板上，加以打線相互連接組成發光矩陣。於第一圖中，包含有一基板10以及複數個發光二極體晶片20，該些發光二極體晶片20整齊地以矩陣之形式對齊排列。於此種佈置方式之下，除了落於四個角落之發光二極體晶片20得以有兩個側邊能不受遮蔽而出光之外，其餘的發光二極體晶片20受到相鄰晶片的阻擋，相互遮擋到側面，因而造成僅有一側面能不受阻擋而出光的狀況。在供給相同之能量之下，卻只有一個側面能夠出光，無疑是一種結構上所造成的資源浪費。
    因此，本發明針對發光二極體晶片組合而架構之高壓發光二極體結構做出特別設計，使發光二極體的晶片具有更大的出光面積，藉以提升高壓發光二極體所能發揮的發光效率。
    本發明之主要目的，係提供一種高壓發光二極體，其具有交錯排列之非矩陣式發光二極體晶片佈置於基板上，因此部分發光二極體晶片之側邊將可不再受遮蔽而能順利出光，提升整體的發光效率。
    為了達到上述之目的，本發明係揭示一種高壓發光二極體，其係包含一基板；及複數個發光二極體晶片，係位於該基板上，該些發光二極體晶片之數量為18～25顆；其中，該些發光二極體晶片為交互錯位排列，且經封裝於該基板上而為一高壓發光二極體。
    為使　貴審查委員對本發明之特徵及所達成之功效有更進一步之瞭解與認識，謹佐以較佳之實施例及配合詳細之說明，說明如後：
    於先前技術之該些發光二極體陣列模組，由於其結構上係將發光二極體採用矩陣排列，因此會有大量互相遮蔽阻擋之情況，故本發明針對此缺點，設計此一用於發光二極體陣列模組之高壓發光二極體，可以減少交互遮蔽阻擋的情形，進而提升出光效率。
    首先，請參考第二圖，本發明之高壓發光二極體，其係包含一基板10及複數個發光二極體晶片20。
    其中，該些發光二極體晶片20係位於該基板10上，且該些發光二極體晶片20之數量為18～25顆；除此之外，該些發光二極體晶片20為交互錯位排列，且經封裝於該基板上而為一高壓發光二極體。
    本發明之關鍵技術特徵在於該些發光二極體晶片20在排列上一如第二圖所示，每一個發光二極體晶片20皆沒有與相鄰之所有發光二極體晶片20側邊對齊，因此在整體發光二極體晶片20陣列之周邊呈現錯落的不規則鋸齒形式，為一非矩陣的排列方式。在此排列之下，除了該些發光二極體晶片20的面積占基板10之晶片發光區域約60%～80%的此一範圍可順利出光之外，於發光二極體晶片20的側邊發光效率也有所提升，因為原本除了落於四個角落之發光二極體晶片20得以有兩個側邊能不受遮蔽而出光之外，其餘的發光二極體晶片20受到相鄰晶片的阻擋，相互遮擋到側面的情況已獲改善，透過因為非矩陣之交錯排列形成的不規則鋸齒形式側邊讓部分發光二極體晶片20得以不再受到遮蔽，因而能夠順利出光。
    經對照第一圖及第二圖，應可清楚了解本發明為了在相同製作成本上達到最好的出光效率，透過調整發光二極體晶片20的佈置方式而使效率提升。而除了第二圖的佈置方式之外，第三圖亦為本發明的實施方式之一，換句話說，若能以非矩陣之方式進行排列，則可獲得周邊較好的出光效果。
    本發明中，該些發光二極體晶片20之間係以串聯的方式相互連接，請參考第四圖，由該側面剖視圖可看出發光二極體晶片20散佈於基板10上，以金屬線做電性連接，經串聯後再以金屬線通往兩端電極以向外做連接。而每一發光二極體晶片20的電壓區間為3.1～3.5伏特。由於連接方式為串聯，數量又為18～25顆晶片，因此本發明之高壓發光二極體的理論總電壓範圍值為55.8伏特～87.5伏特，但建議本發明應用時將電壓控制落於70～75伏特，此為較適宜的電壓範圍。
    而除了上述排列方式所達成的出光效率優化之外，本發明亦對該些發光二極體晶片20本身設計為較好的出光結構。請參考第五圖，本發明之發光二極體晶片20包含了一P型電極201；一透明導電層202；一電流阻斷層203；一P型半導體層204；一發光層205；一N型電極206；一N型半導體層207；及一光學反射層208。
    其中，該光學反射層208係位於該基板10之上，亦為該發光二極體晶片20之底部；該N型半導體層207係位於該光學反射層208之上；該N型電極206係位於該N型半導體層207之上；該發光層205亦位於該N型半導體層207之上，但並不與該N型電極206相連接；該P型半導體層204係位於該發光層205之上；該透明導電層202係位於該P型半導體層204之上，也是該發光二極體晶片20之頂部，此外，該電流阻斷層203亦係位於該P型半導體層204之上，同時位於該透明導電層202之下方；而至於該P型電極201，則係位於該透明導電層202之上。
    以此發光二極體晶片20之結構，發光層205所產生的光得以透過光學反射層208之反射作用而重新往發光二極體晶片的上方出光，導回正確的出光方向。而電流阻斷層的目的則在於提升發光效率；由於一般發光二極體中的電流方向為最短路徑，如此將使大部分的電流皆注入P型電極201下方的區域。這樣將導致大部分的光聚集在P型電極201下方，因而使所產生的光被P型電極201所阻擋而無法大量輸出，造成光輸出功率下降。因此，可使用電流阻擋層來改善，此方法是使用蝕刻與化學氣相沉積的方式，來將絕緣體沉積於元件結構中。用來阻擋最短之路徑，因此使發光二極體的電流往其餘路徑來流動，進而使發光二極體晶片的光亮度提升。
    透過此具有非矩陣式錯位排列、並且具有良好出光效率設計之發光二極體晶片之高壓發光二極體，在相同材料之下，不需提升所使用的發光二極體晶片數量即可更進一步提升出光效率，為一經濟實惠的出光效率優化結構。
    惟以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍，舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。
    本發明係實為一具有新穎性、進步性及可供產業利用者，應符合我國專利法所規定之專利申請要件無疑，爰依法提出發明專利申請，祈　鈞局早日賜准專利，至感為禱。
10．．．基板
20．．．發光二極體晶片
201．．．P型電極
202．．．透明導電層
203．．．電流阻斷層
204．．．P型半導體層
205．．．發光層
206．．．N型電極
207．．．N型半導體層
208．．．光學反射層
第一圖：其係為先前技術結構示意圖；
第二圖：其係為本發明之一較佳實施例之結構示意圖；
第三圖：其係為本發明之一較佳實施例之結構示意圖；
第四圖：其係為本發明之一較佳實施例之側面剖視圖；及
第五圖：其係為本發明之一較佳實施例之發光二極體晶片側面剖視圖。
10．．．基板
20．．．發光二極體晶片

Claims (8)

  1. 一種高壓發光二極體，其係包含：
    一基板；及
    複數個發光二極體晶片，係位於該基板上，該些發光二極體晶片之數量為18～25顆；
    其中，該些發光二極體晶片為交互錯位排列，且經封裝於該基板上而為一高壓發光二極體。
  2. 如申請專利範圍第1項所述之高壓發光二極體，其中該發光二極體晶片之電壓為3.1～3.5伏特。
  3. 如申請專利範圍第1項所述之高壓發光二極體，其中該些發光二極體晶片之晶片發光區域係覆蓋該基板60%～80%之表面積。
  4. 如申請專利範圍第1項所述之高壓發光二極體，其中該些發光二極體晶片之間係為串聯連接。
  5. 如申請專利範圍第1項所述之高壓發光二極體，其中該些發光二極體晶片經串聯後之總電壓為70～75伏特。
  6. 如申請專利範圍第1項所述之高壓發光二極體，其中該發光二極體晶片具有一透明導電層，係位於該發光二極體晶片之頂部。
  7. 如申請專利範圍第1項所述之高壓發光二極體，其中該發光二極體晶片具有一電流阻斷層，係位於該透明導電層之下方。
  8. 如申請專利範圍第1項所述之高壓發光二極體，其中該發光二極體晶片具有一光學反射層，係位於該發光二極體晶片之底部。
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