TW201313429A - Mold release processing method for nanoimprinting molds, production method employing the mold release processing method, nanoimprinting mold, nanoimprinting method, and method for producing patterned substrates - Google Patents

Mold release processing method for nanoimprinting molds, production method employing the mold release processing method, nanoimprinting mold, nanoimprinting method, and method for producing patterned substrates Download PDF

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TW201313429A
TW201313429A TW101129547A TW101129547A TW201313429A TW 201313429 A TW201313429 A TW 201313429A TW 101129547 A TW101129547 A TW 101129547A TW 101129547 A TW101129547 A TW 101129547A TW 201313429 A TW201313429 A TW 201313429A
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mold
release
substrate
thickness
concave
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TW101129547A
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Chinese (zh)
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Satoshi Wakamatsu
Akiko Hattori
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Fujifilm Corp
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/56Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/58Applying the releasing agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/56Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/60Releasing, lubricating or separating agents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00Moulds or cores; Details thereof or accessories therefor
    • B29C33/56Coatings, e.g. enameled or galvanised; Releasing, lubricating or separating agents
    • B29C33/60Releasing, lubricating or separating agents
    • B29C33/62Releasing, lubricating or separating agents based on polymers or oligomers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C37/00Component parts, details, accessories or auxiliary operations, not covered by group B29C33/00 or B29C35/00
    • B29C37/0067Using separating agents during or after moulding; Applying separating agents on preforms or articles, e.g. to prevent sticking to each other
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A mold release processing method for a mold (1) includes: preparing a mold release processing substrate (5) coated with a mold release agent (6); causing a mold main body (12) having adsorbed water (2) on the surface thereof and the mold release processing substrate (5) to approach each other until a contact state in which the upper portions of protrusions of a pattern (13) of protrusions and recesses are in contact with the mold release agent (6); maintaining the contact state until a mold release layer (14), having a thickness distribution in which the thickness of the mold release layer (14) at the side surfaces (Ss) of the pattern (13) of protrusions and recesses becomes thinner from the top surfaces (St) of the protrusions toward the bottom surfaces (Sb) of the recesses due to the mold release agent (6) becoming diffused in the adsorbed water (2), is formed; and causing the mold main body (12) and the mold release processing substrate (5) to move away from each other such that the upper portions of the protrusions separate from the mold release agent (6) on the mold release processing substrate (5).

Description

用於奈米壓印模具的脫膜處理方法、應用該脫膜處理方法的製造方法、奈米壓印方法以及圖案化基底的製造方法 Release method for nanoimprint mold, manufacturing method using the same, nanoimprint method, and method for manufacturing patterned substrate

本發明是關於在表面上具有精細凹凸圖案(pattern of protrusions and recesses)的模具、所述模具的製造方法、奈米壓印方法以及圖案化基底的製造方法。 The present invention relates to a mold having a pattern of protrusions and recesses on a surface, a method of manufacturing the mold, a nanoimprint method, and a method of manufacturing a patterned substrate.

在製造磁記錄媒體(諸如離散磁道媒體(discrete track media,DTM)以及位元圖案化媒體(BPM,bit patterned media))以及半導體裝置的應用中,對於採用奈米壓印方法,將圖案轉移至塗佈於欲處理之物體上的抗蝕劑上的圖案轉移技術,有高度的期望。 In applications for manufacturing magnetic recording media such as discrete track media (DTM) and bit patterned media (BPM) and semiconductor devices, the pattern is transferred to the nanoimprint method. The pattern transfer technique applied to the resist on the object to be treated has a high degree of expectation.

具體而言,奈米壓印方法,亦即將其上形成有凹凸圖案的模具(通常稱為模具、壓模或模板)壓抵於塗佈於作為欲處理之物體的基底上的抗蝕劑上。將原型壓在抗蝕劑上引起抗蝕劑機械變形或流動,從而精確轉移精細圖案。若一旦製得模具,則可以簡單方式反覆模製奈米級精細結構。因此,奈米壓印方法是一種幾乎不會產生有害廢物以及排出物的經濟型轉移技術。因此,對於將奈米壓印方法應用於各種領域,有高度的期望。 Specifically, the nanoimprint method, that is, a mold on which a concavo-convex pattern is formed (generally referred to as a mold, a stamper, or a stencil) is pressed against a resist applied to a substrate as an object to be processed. . Pressing the prototype onto the resist causes the resist to mechanically deform or flow, thereby accurately transferring the fine pattern. Once the mold is produced, the nano-scale fine structure can be overmolded in a simple manner. Therefore, the nanoimprint method is an economical transfer technique that produces almost no hazardous waste and emissions. Therefore, there is a high expectation for applying the nanoimprint method to various fields.

在奈米壓印中,施行脫模處理以形成脫模層,其中脫模劑結合(包含物理鍵以及化學鍵)至模具主體的表面,使得在模具與抗蝕劑分離時,殘餘抗蝕劑不會餘留在模具表面上(專利文獻1至4)。更具體而言,專利文獻2揭露一種僅在模具上之凹凸圖案之凸處的頂面上施行脫模處理 的方法。專利文獻3揭露一種使大量脫模劑結合至凹凸圖案的凹處而引起脫模性在整個凹凸圖案上變得不均勻的方法。專利文獻4揭露一種使結合至凹處之底面之脫模劑的量少於結合至凸處之頂面之脫模劑的量的方法。 In nanoimprinting, a mold release treatment is performed to form a release layer in which a release agent is bonded (including physical bonds and chemical bonds) to the surface of the mold body such that the residual resist is not separated when the mold is separated from the resist It will remain on the surface of the mold (Patent Documents 1 to 4). More specifically, Patent Document 2 discloses that a release treatment is performed only on the top surface of the convex portion of the concave-convex pattern on the mold. Methods. Patent Document 3 discloses a method of bonding a large amount of release agent to a concave portion of a concave-convex pattern to cause mold release property to become uneven over the entire concave-convex pattern. Patent Document 4 discloses a method of making the amount of the releasing agent bonded to the bottom surface of the concave portion smaller than the amount of the releasing agent bonded to the top surface of the convex portion.

然而,已知隨著奈米壓印操作反覆地進行,脫模劑自模具的表面逐漸剝離。在這些情況下,較佳例如是在每次執行預定的壓印操作時都進行脫模處理以在模具上形成脫模層。此外,若脫模處理在奈米壓印裝置外部進行,則奈米壓印之生產率顯著降低。因此,脫模處理較佳在奈米壓印裝置內部與奈米壓印處理一起進行。一種轉移技術(其中使模具主體之凹凸圖案接觸塗佈於脫模處理基底上之脫模劑(專利文獻2))是一種可在奈米壓印裝置內部容易地進行的脫模處理。 However, it is known that the release agent is gradually peeled off from the surface of the mold as the nanoimprint operation is repeatedly performed. In these cases, it is preferable to perform a mold release treatment to form a release layer on the mold, for example, each time a predetermined imprint operation is performed. Further, if the demolding treatment is performed outside the nanoimprinting apparatus, the productivity of the nanoimprinting is remarkably lowered. Therefore, the demolding treatment is preferably carried out together with the nanoimprinting treatment inside the nanoimprinting apparatus. A transfer technique in which a release agent for applying a concavo-convex pattern of a mold main body to a release-treated substrate (Patent Document 2) is a release treatment which can be easily performed inside a nanoimprinting apparatus.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature] [專利文獻1] [Patent Document 1]

美國專利第6,309,580號 U.S. Patent No. 6,309,580

[專利文獻2] [Patent Document 2]

日本專利第4317375號 Japanese Patent No. 4317375

[專利文獻3] [Patent Document 3]

日本未審查專利公開案第2008-179034號 Japanese Unexamined Patent Publication No. 2008-179034

[專利文獻4] [Patent Document 4]

日本未審查專利公開案第2009-226750號 Japanese Unexamined Patent Publication No. 2009-226750

然而,在專利文獻2所揭露之方法中,僅凹凸圖案之 凸處之頂面經受脫模處理,因此存在一個問題,亦即其他表面之脫模性較差。在專利文獻2之發明中,自其欲賦予抗蝕劑圖案大於凹凸圖案之縱橫比(aspect ratio)的目的觀點而言,這點並不成問題。然而,在一般奈米壓印操作中,自抑制抗蝕劑圖案出現缺陷之觀點而言,情況時常是希望在凹凸圖案之整個表面上具有高脫模性。 However, in the method disclosed in Patent Document 2, only the concave-convex pattern is The top surface of the convex portion is subjected to mold release treatment, so there is a problem that the surface release property of other surfaces is poor. In the invention of Patent Document 2, this is not a problem from the viewpoint of the fact that the resist pattern is required to have an aspect ratio larger than that of the concave-convex pattern. However, in the general nanoimprint operation, from the viewpoint of suppressing the occurrence of defects in the resist pattern, it is often desirable to have high releasability on the entire surface of the concavo-convex pattern.

鑒於上述情況,開發出了本發明。本發明之一個目的在於提供一種用於製造奈米壓印模具的模具脫模處理方法,所述方法能夠在奈米壓印裝置內部容易地進行並且改良凹凸圖案整個表面之脫模性。本發明之另一目的在於提供一種奈米壓印模具的製造方法,其應用所述脫模處理方法。 In view of the above, the present invention has been developed. SUMMARY OF THE INVENTION An object of the present invention is to provide a mold release treatment method for producing a nano imprint mold which can be easily carried out inside a nano imprint apparatus and which improves the mold release property of the entire surface of the concavo-convex pattern. Another object of the present invention is to provide a method of manufacturing a nanoimprinting mold to which the demolding method is applied.

本發明之又一目的在於提供一種能實現精確處理的模具、一種奈米壓印方法、以及一種在圖案化基底的製造中使用的應用奈米壓印製造圖案化基底的方法。 It is still another object of the present invention to provide a mold capable of achieving precise processing, a nanoimprint method, and a method of manufacturing a patterned substrate using nanoimprinting used in the manufacture of a patterned substrate.

可達成上述目的之本發明之脫模處理方法是一種在模具主體之表面上形成脫模層的方法,其中所述模具主體的表面上具有精細凹凸圖案,其特徵在於包括:製備塗佈有脫模劑之脫模處理基底;使在表面上具有吸附水之模具主體與脫模處理基底彼此靠近直至接觸狀態,其中凹凸圖案之凸處之上部與脫模劑接觸;維持接觸狀態直至形成脫模層,脫模層之厚度分佈為 脫模層在凹凸圖案之側面處之厚度因脫模劑擴散至吸附水中而自凸處之頂面朝向凹處之底面變薄;以及使模具主體與脫模處理基底彼此分離,使得凸處之上部與脫模處理基底上之脫模劑分離。 The mold release treatment method of the present invention which achieves the above object is a method of forming a release layer on the surface of a mold main body, wherein the mold main body has a fine concavo-convex pattern on its surface, which is characterized by comprising: preparing a coating The mold release treatment substrate; the mold body having the adsorbed water on the surface and the mold release substrate are brought close to each other until the contact state, wherein the convex portion of the concave and convex pattern is in contact with the release agent; maintaining the contact state until the mold release is formed Layer, the thickness distribution of the release layer is The thickness of the release layer at the side of the concave-convex pattern is thinned from the top surface of the convex portion toward the bottom surface of the concave portion due to diffusion of the release agent into the adsorbed water; and the mold main body and the release-treated substrate are separated from each other such that the convex portion is The upper portion is separated from the release agent on the release treated substrate.

本發明之脫模處理方法較佳在奈米壓印裝置內部執行。 The release treatment method of the present invention is preferably carried out inside a nanoimprinting apparatus.

本發明之奈米壓印模具的製造方法是具有表面上有精細凹凸圖案之模具主體以及在模具主體表面上之脫模層的模具的製造方法,其特徵在於包括:製備塗佈有脫模劑之脫模處理基底;使在表面上具有吸附水之模具主體與脫模處理基底彼此靠近直至接觸狀態,其中凹凸圖案之凸處之上部與所述脫模劑接觸;維持接觸狀態直至形成脫模層,脫模層之厚度分佈為脫模層在凹凸圖案之側面處之厚度因脫模劑擴散至吸附水中而自凸處之頂面朝向凹處之底面變薄;以及使模具主體與脫模處理基底彼此分離,使得凸處之上部與脫模處理基底上之脫模劑分離。 The method for producing a nanoimprinting mold of the present invention is a method for producing a mold having a mold main body having a fine concavo-convex pattern on the surface and a release layer on the surface of the mold main body, comprising: preparing a coating release agent Dissolving the substrate; bringing the mold body having the adsorbed water on the surface and the release-treated substrate to each other until the contact state, wherein the upper portion of the convex portion of the concave-convex pattern is in contact with the release agent; maintaining the contact state until the release is formed The thickness distribution of the release layer is such that the thickness of the release layer at the side of the concave-convex layer is thinned from the top surface of the convex portion toward the bottom surface of the concave portion due to the diffusion of the release agent into the adsorption water; and the mold body and the mold release are made. The treatment substrates are separated from each other such that the upper portion of the protrusions is separated from the release agent on the release treatment substrate.

本發明之奈米壓印模具的製造方法較佳在奈米壓印裝置內部執行。 The method for producing a nanoimprinting mold of the present invention is preferably carried out inside a nanoimprinting apparatus.

本發明之奈米壓印模具包括:在表面上具有精細凹凸圖案之模具主體;以及在模具主體之表面上之脫模層;且其特徵在於:脫模層之厚度分佈為脫模層在凹凸圖案之側面處之 厚度自凸處之頂面朝向凹處之底面變薄。 The nanoimprinting mold of the present invention comprises: a mold main body having a fine concavo-convex pattern on the surface; and a release layer on the surface of the mold main body; and characterized in that the thickness distribution of the release layer is the release layer in the unevenness At the side of the pattern The thickness is thinned from the top surface of the convex portion toward the bottom surface of the concave portion.

在本發明之模具中,所述脫模層之厚度分佈可以是在側面處之厚度自與頂面處之厚度一樣厚之厚度減至與底面處之厚度一樣厚之厚度。 In the mold of the present invention, the thickness distribution of the release layer may be such that the thickness at the side surface is reduced from the thickness as thick as the thickness at the top surface to the thickness as thick as the thickness at the bottom surface.

在本發明之模具中,脫模層之厚度分佈可以是頂面處之厚度在1奈米至5奈米之範圍內,並且底面處之厚度在0.1奈米至1奈米之範圍內且為頂面處之厚度的70%或更小。 In the mold of the present invention, the thickness distribution of the release layer may be such that the thickness at the top surface is in the range of 1 nm to 5 nm, and the thickness at the bottom surface is in the range of 0.1 nm to 1 nm and The thickness at the top surface is 70% or less.

另外,本發明之奈米壓印方法之特徵在於包括:採用如上所述之模具;用抗蝕劑塗佈奈米壓印基底;將模具壓在奈米壓印基底塗佈有抗蝕劑的表面上;以及使模具與奈米壓印基底分離。 In addition, the nanoimprint method of the present invention is characterized by comprising: using a mold as described above; coating a nanoimprint substrate with a resist; and pressing the mold on the nanoimprint substrate coated with a resist Surface; and separating the mold from the nanoimprint substrate.

本發明之奈米壓印方法較佳是,在歷經預定次數之按壓步驟之後或根據脫模層之磨損程度,對模具施行脫模處理,所述脫模處理包括:製備塗佈有脫模劑之脫模處理基底;使在表面上具有吸附水之模具主體與脫模處理基底彼此靠近直至接觸狀態,其中凹凸圖案之凸處之上部與所述脫模劑接觸;維持接觸狀態直至形成脫模層,脫模層之厚度分佈為脫模層在凹凸圖案之側面處之厚度因脫模劑擴散至吸附水中而自凸處之頂面朝向凹處之底面變薄;以及 使模具主體與脫模處理基底彼此分離,使得凸處之上部與脫模處理基底上之脫模劑分離。 Preferably, the nanoimprint method of the present invention applies a mold release treatment to the mold after a predetermined number of pressing steps or according to the degree of abrasion of the release layer, the mold release treatment comprising: preparing a coating release agent Dissolving the substrate; bringing the mold body having the adsorbed water on the surface and the release-treated substrate to each other until the contact state, wherein the upper portion of the convex portion of the concave-convex pattern is in contact with the release agent; maintaining the contact state until the release is formed The thickness distribution of the release layer is such that the thickness of the release layer at the side of the concave-convex pattern is thinned from the top surface of the convex portion toward the bottom surface of the concave portion due to the diffusion of the release agent into the adsorption water; The mold main body and the release-treated substrate are separated from each other such that the upper portion of the convex portion is separated from the release agent on the release-treated substrate.

在本發明之奈米壓印方法中,將模具壓抵於奈米壓印基底之步驟與施行脫模處理之步驟兩者較佳在奈米壓印裝置內部執行。 In the nanoimprint method of the present invention, both the step of pressing the mold against the nanoimprint substrate and the step of performing the mold release treatment are preferably performed inside the nanoimprinting apparatus.

本發明之圖案化基底的製造方法之特徵在於包括:藉由上文描述之奈米壓印方法在欲處理之基底上形成抗蝕劑膜,將凹凸圖案轉移至抗蝕劑膜;以及使用抗蝕劑膜作為遮罩進行蝕刻,形成對應於轉移至抗蝕劑膜上之凹凸圖案的凹凸圖案。 The method for fabricating a patterned substrate of the present invention is characterized by comprising: forming a resist film on a substrate to be processed by the nanoimprint method described above, transferring the concave-convex pattern to the resist film; The etchant film is etched as a mask to form a concavo-convex pattern corresponding to the concavo-convex pattern transferred onto the resist film.

本發明之脫模處理方法以及模具的製造方法之特徵在於包括以下步驟:製備塗佈有脫模劑之脫模處理基底;使在表面上具有吸附水之模具主體與脫模處理基底彼此靠近直至接觸狀態,其中凹凸圖案之凸處之上部與脫模劑接觸;維持接觸狀態直至形成脫模層,脫模層之厚度分佈為脫模層在凹凸圖案之側面處之厚度因脫模劑擴散至吸附水中而自凸處之頂面朝向凹處之底面變薄;以及使模具主體與脫模處理基底彼此分離,使得凸處之上部與脫模處理基底上之脫模劑分離。由此,可以不僅在凹凸圖案之凸處之頂面上而且在凸處之側面以及凹處之底面上形成脫模層。因此,脫模處理可容易地在奈米壓印裝置內部進行且改良凹凸圖案整個表面上之脫模性。 The mold release treatment method and the mold manufacturing method of the present invention are characterized by comprising the steps of: preparing a release treatment substrate coated with a release agent; and bringing the mold main body having the adsorbed water on the surface and the release treatment substrate close to each other until a contact state in which an upper portion of the convex portion of the concave-convex pattern is in contact with the release agent; the contact state is maintained until a release layer is formed, and the thickness distribution of the release layer is such that the thickness of the release layer at the side of the concave-convex pattern is diffused by the release agent to The water is adsorbed and thinned from the top surface of the convex portion toward the bottom surface of the concave portion; and the mold main body and the release-treated substrate are separated from each other such that the upper portion of the convex portion is separated from the release agent on the release-treated substrate. Thereby, the release layer can be formed not only on the top surface of the convex portion of the concave-convex pattern but also on the side surface of the convex portion and the bottom surface of the concave portion. Therefore, the release treatment can be easily performed inside the nanoimprinting apparatus and the mold release property on the entire surface of the concavo-convex pattern is improved.

另外,本發明之奈米壓印模具之特徵在於具有脫模層,脫模層之厚度分佈為脫模層在凹凸圖案之側面處之厚 度自凸處之頂面朝向凹處之底面變薄。因為脫模層在凹凸圖案之整個表面上形成,所以整個表面之脫模性較高。因此,能夠在應用奈米壓印的圖案化基底之製造中進行精確處理。 Further, the nanoimprinting mold of the present invention is characterized in that it has a release layer, and the thickness distribution of the release layer is the thickness of the release layer at the side of the concave-convex pattern. The degree is thinned from the top surface of the convex portion toward the bottom surface of the concave portion. Since the release layer is formed on the entire surface of the concavo-convex pattern, the release property of the entire surface is high. Therefore, it is possible to perform precise processing in the manufacture of a patterned substrate to which nanoimprint is applied.

再者,本發明之奈米壓印方法以及圖案化基底的製造方法採用本發明之模具來執行,所述模具在其凹凸圖案之整個表面上具有高脫模性。因此,能夠在應用奈米壓印的圖案化基底之製造中進行精確處理。 Furthermore, the nanoimprint method of the present invention and the method of manufacturing a patterned substrate are carried out using the mold of the present invention, which has high mold release property over the entire surface of the concavo-convex pattern. Therefore, it is possible to perform precise processing in the manufacture of a patterned substrate to which nanoimprint is applied.

在下文中,將參考附圖描述本發明之實施例。然而,本發明不限於下文所描述之實施例。注意,在圖式中,所繪製之組成性要素的尺寸與其實際尺寸不同,以有助於其目視識別。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the invention is not limited to the embodiments described below. Note that in the drawings, the dimensions of the constituent elements drawn are different from their actual dimensions to facilitate their visual recognition.

[用於奈米壓印模具的脫模處理方法、奈米壓印模具的製造方法以及奈米壓印模具] [Release processing method for nano imprinting mold, manufacturing method of nano imprinting mold, and nano imprinting mold]

圖1是說明根據本發明之一個實施例的模具1的結構的示意性剖視圖。圖2至圖6是說明模具1之製造方法的步驟的示意性剖視圖。 1 is a schematic cross-sectional view illustrating the structure of a mold 1 according to an embodiment of the present invention. 2 to 6 are schematic cross-sectional views illustrating steps of a method of manufacturing the mold 1.

用於本實施例之模具1的脫模處理包含以下步驟:製備具有凹凸圖案13的模具主體12;製備塗佈有脫模劑6的脫模處理基底5(圖2);使在表面上吸附有水2之模具主體12與脫模處理基底5彼此靠近直至接觸狀態為凹凸圖案13之凸處之上部與脫模劑6接觸(圖3);維持所述接觸狀態直至形成形成脫模層14,脫模層14之厚度分佈為 脫模層14在凹凸圖案13之側面Ss處之厚度因脫模劑6擴散至吸附的水2中,而自凸處之頂面St朝向凹處之底面Sb變薄(圖5);以及使模具主體12與脫模處理基底5彼此分離,使得凸處之上部與脫模處理基底5上之脫模劑6分離(圖6)。 The mold release treatment for the mold 1 of the present embodiment comprises the steps of: preparing the mold main body 12 having the concave-convex pattern 13; preparing the release treatment substrate 5 coated with the release agent 6 (Fig. 2); and adsorbing on the surface The mold main body 12 having the water 2 and the release-treated substrate 5 are brought close to each other until the upper portion of the convex portion in the contact state of the concave-convex pattern 13 is in contact with the release agent 6 (FIG. 3); the contact state is maintained until the formation of the release layer 14 is formed. The thickness distribution of the release layer 14 is The thickness of the release layer 14 at the side Ss of the concavo-convex pattern 13 is diffused into the adsorbed water 2 by the release agent 6, and the top surface St from the convex portion is thinned toward the bottom surface Sb of the recess (Fig. 5); The mold main body 12 and the release-treated substrate 5 are separated from each other such that the upper portion of the convex portion is separated from the release agent 6 on the release-treated substrate 5 (Fig. 6).

注意,當在模具主體12上形成脫模層14時,構成模具1。因此,脫模處理方法實際上與模具1的製造方法相同。 Note that when the release layer 14 is formed on the mold main body 12, the mold 1 is constructed. Therefore, the mold release treatment method is actually the same as the mold 1 manufacturing method.

藉由上文描述之脫模處理方法以及模具製造方法獲得的本實施例之模具1具備有:在表面上具有精細凹凸圖案13的模具主體12;以及在模具主體12之整個表面上形成的脫模層14,如圖1所說明。脫模層14之厚度分佈為脫模層14在凸處之頂面St處的厚度大於其在凹處之底面Sb處的厚度,且脫模層14在凹凸圖案13之側面Ss處之厚度自頂面St朝向底面Sb變薄。 The mold 1 of the present embodiment obtained by the above-described mold release treatment method and mold manufacturing method is provided with: a mold main body 12 having a fine uneven pattern 13 on the surface; and a peel formed on the entire surface of the mold main body 12. The mold layer 14, as illustrated in Figure 1. The thickness distribution of the release layer 14 is such that the thickness of the release layer 14 at the top surface St of the convex portion is greater than the thickness at the bottom surface Sb of the concave portion, and the thickness of the release layer 14 at the side Ss of the concave-convex pattern 13 is The top surface St is thinned toward the bottom surface Sb.

(模具主體) (mold body)

模具主體12之材料可以是:金屬,諸如矽、鎳、鋁、鉻、鋼、鉭以及鎢;其氧化物、氮化物以及碳化物。支撐部分12之材料的具體實例包含氧化矽、氧化鋁、石英玻璃、派熱克斯(PyrexTM)玻璃以及鈉玻璃。 The material of the mold body 12 may be: metals such as tantalum, nickel, aluminum, chromium, steel, tantalum, and tungsten; oxides, nitrides, and carbides thereof. Specific examples of support material portion 12 comprises silicon oxide, alumina, quartz glass, Pyrex (Pyrex TM) glass, and soda glass.

凹凸圖案13之形狀不受特別限制,且可根據奈米壓印模具之預定用途酌情選擇。典型圖案之一個實例是線-空間圖案,如圖1所說明。線-空間圖案之凸處之長度、凸處之寬度W1、凸處間之距離W2以及凸處距凹處之底部 的高度H(凹處之深度)在線-空間圖案中酌情設定。舉例而言,線之寬度W1在10奈米至100奈米之範圍內,更佳在20奈米至70奈米之範圍內,線間之距離W2在10奈米至500奈米之範圍內,更佳在20奈米至100奈米之範圍內,且線之高度H在10奈米至500奈米之範圍內,更佳在30奈米至100奈米之範圍內。另外,構成凹凸圖案13之凸處的形狀可以是具有矩形、圓形或橢圓形截面的點。 The shape of the concavo-convex pattern 13 is not particularly limited and may be selected as appropriate depending on the intended use of the nanoimprint mold. An example of a typical pattern is a line-space pattern, as illustrated in FIG. The length of the line-space pattern, the width of the protrusion W1, the distance W2 between the protrusions, and the bottom of the protrusion from the bottom of the recess The height H (depth of the recess) is set as appropriate in the line-space pattern. For example, the width W1 of the line is in the range of 10 nm to 100 nm, more preferably in the range of 20 nm to 70 nm, and the distance W2 between the lines is in the range of 10 nm to 500 nm. More preferably, it is in the range of 20 nm to 100 nm, and the height H of the line is in the range of 10 nm to 500 nm, more preferably in the range of 30 nm to 100 nm. Further, the shape of the convex portion constituting the concave-convex pattern 13 may be a point having a rectangular, circular or elliptical cross section.

上文描述之模具主體12可例如藉由以下程序來製造。首先,藉由旋塗法或其類似方法用光阻劑塗佈矽基底以形成抗蝕劑層,所述光阻劑具有丙烯酸系樹脂(諸如PHS(聚羥基苯乙烯)型化學增幅型抗蝕劑)、酚醛清漆樹脂或PMMA(聚甲基丙烯酸甲酯)作為其主要組分。接著,將雷射束(或電子束)照射在矽基底上,同時根據所希望的凹凸圖案進行調節,以使光阻劑層之表面上的圖案曝光。隨後,對光阻劑層進行顯影以移除曝光過的部分。最後,使用經曝光部分移除之後的光阻劑層作為遮罩藉由反應離子蝕刻(reactive ion etching,RIE)或其類似方法進行選擇性蝕刻,以獲得具有預先確定的凹凸圖案之模具主體。在獲得具有平台(mesa)部分以及凸緣(flange)部分之平台型模具主體12的情況下,採用具有階梯式外部周邊部分之基底材料,且藉由上文描述之步驟在平台部分上形成凹凸圖案。 The mold body 12 described above can be manufactured, for example, by the following procedure. First, a ruthenium substrate is coated with a photoresist by a spin coating method or the like to form a resist layer having an acrylic resin (such as a PHS (polyhydroxystyrene) type chemically amplified resist. As a main component, a novolak resin or PMMA (polymethyl methacrylate). Next, a laser beam (or electron beam) is irradiated onto the crucible substrate while being adjusted according to the desired concavo-convex pattern to expose the pattern on the surface of the photoresist layer. Subsequently, the photoresist layer is developed to remove the exposed portions. Finally, the photoresist layer after the exposed portion is removed is selectively etched by reactive ion etching (RIE) or the like using the photoresist layer as a mask to obtain a mold body having a predetermined concavo-convex pattern. In the case of obtaining a platform-type mold body 12 having a mesa portion and a flange portion, a base material having a stepped outer peripheral portion is employed, and a bump is formed on the platform portion by the steps described above pattern.

(模具主體表面上的吸附水) (adsorbed water on the surface of the mold body)

吸附於模具主體12之表面上的吸附水2在本發明中 很重要。更具體而言,如隨後所將描述,利用由吸附水2之毛細管作用形成彎液面(在物體之間的微小間隙中形成的液體橋)的現象使脫模劑6擴散至凹凸圖案13之表面上。「吸附水」是指模具主體12周圍環境中所包含並以液相附著於模具主體12之表面的水分子。 Adsorbed water 2 adsorbed on the surface of the mold main body 12 is in the present invention Very important. More specifically, as will be described later, the releasing agent 6 is diffused to the concave-convex pattern 13 by the phenomenon that the meniscus (the liquid bridge formed in the minute gap between the objects) is formed by the capillary action of the adsorbed water 2 On the surface. The "adsorbed water" refers to water molecules contained in the environment around the mold main body 12 and attached to the surface of the mold main body 12 in a liquid phase.

在本實施例中,必要時調節模具主體12周圍環境以使吸附水2附著於模具主體12之表面。由吸附水2形成之層(吸附水層)的厚度根據欲形成之脫模層14之厚度酌情設定。具體而言,設定吸附水層之厚度與脫模層14之厚度之間的關係,以使吸附水層之厚度約為欲形成之脫模層之厚度的一半。在本發明中,吸附水層之厚度較佳在0.3奈米至3奈米範圍內,且所述厚度更佳在1奈米至2奈米範圍內。設定上述上限的原因是,因為在吸附水層之厚度將超過3奈米之環境下,發生冷凝之可能性較高。若發生冷凝,則很難形成均一的吸附水層。設定上述下限的原因是,因為若吸附水層之厚度小於0.3奈米,則脫模劑6之擴散效率顯著降低。有效的是,設置有助於吸附水2附著於模具主體12之表面的條件,以增加脫模劑6之塗佈速率或減少脫模處理時間。設置此類條件之方法的實例包含:在模具主體12之表面上施行表面處理以改變其性質,以使表面具有親水性;以及增加執行壓印所處之環境之相對濕度。用於改變模具主體12之表面之性質以使表面具有親水性的表面處理方法包含:採用化學劑之濕洗方法;採用電漿或UV臭氧之乾洗方法;以及將濕洗與乾洗方法結合的方 法。自將吸附水層之厚度設定在上文描述之範圍內的觀點而言,相對濕度之較佳範圍為20%至90%,且更佳在40%至90%範圍內。在一些情況下,不需有意地控制,相對濕度即滿足上述條件。或者,有可能藉由供應乾空氣或濕空氣來調節模具主體12周圍之環境而將相對濕度控制為所希望的值。視模具主體12之表面的親水性質、環境之濕度、環境之溫度等而定,吸附水2將達到平衡狀態(吸附之水分子的量與汽化之水分子的量相等)。在平衡狀態下,吸附水層將在模具主體12之表面上維持恆定厚度。 In the present embodiment, the environment around the mold main body 12 is adjusted as necessary to cause the adsorbed water 2 to adhere to the surface of the mold main body 12. The thickness of the layer (adsorbed water layer) formed of the adsorbed water 2 is set as appropriate depending on the thickness of the release layer 14 to be formed. Specifically, the relationship between the thickness of the adsorbed aqueous layer and the thickness of the release layer 14 is set such that the thickness of the adsorbed aqueous layer is about half the thickness of the release layer to be formed. In the present invention, the thickness of the adsorbed aqueous layer is preferably in the range of from 0.3 nm to 3 nm, and the thickness is more preferably in the range of from 1 nm to 2 nm. The reason for setting the above upper limit is because the possibility of condensation is high in an environment where the thickness of the adsorbed water layer exceeds 3 nm. If condensation occurs, it is difficult to form a uniform aqueous adsorbed layer. The reason for setting the above lower limit is that if the thickness of the adsorbed aqueous layer is less than 0.3 nm, the diffusion efficiency of the releasing agent 6 is remarkably lowered. It is effective to set conditions which contribute to adhesion of the adsorbed water 2 to the surface of the mold main body 12 to increase the coating rate of the release agent 6 or to reduce the release treatment time. Examples of the method of setting such conditions include: performing a surface treatment on the surface of the mold main body 12 to change its properties to make the surface hydrophilic; and increasing the relative humidity of the environment in which the imprinting is performed. A surface treatment method for changing the properties of the surface of the mold main body 12 to make the surface hydrophilic: a wet cleaning method using a chemical agent; a dry cleaning method using plasma or UV ozone; and a method of combining wet washing and dry cleaning methods law. From the viewpoint of setting the thickness of the adsorbed aqueous layer within the range described above, the relative humidity is preferably in the range of 20% to 90%, and more preferably in the range of 40% to 90%. In some cases, no relative intentional control is required, and the relative humidity satisfies the above conditions. Alternatively, it is possible to control the relative humidity to a desired value by supplying dry air or humid air to adjust the environment around the mold main body 12. Depending on the hydrophilic nature of the surface of the mold body 12, the humidity of the environment, the temperature of the environment, etc., the adsorbed water 2 will reach an equilibrium state (the amount of adsorbed water molecules is equal to the amount of vaporized water molecules). In the equilibrium state, the adsorbed aqueous layer will maintain a constant thickness on the surface of the mold body 12.

或者,可藉由用水塗佈表面來使吸附水2附著於模具主體12之表面。在此情況下,在塗佈於模具主體12之表面上的吸附水2達到平衡狀態時的階段,或在達到所述平衡狀態之前的階段(亦即水分子蒸發占主導的階段),使模具主體12與脫模劑6彼此接觸。在用水塗佈模具主體12之表面的情況下,較佳在塗佈於模具主體12之表面上之吸附水2達到平衡狀態時的階段,使模具主體12與脫模劑6彼此接觸。這是因為在達到平衡狀態之前的階段使模具主體12與脫模劑6彼此接觸的情況下,很難將模具主體12之整個表面上之吸附水層的厚度控制為均一的。因為吸附水之量在構成凹凸圖案13之凸處與凹處不同,所以吸附水層之厚度很難變得均一。特別是在模具主體12之表面具有親水性的情況下,吸附水聚集在凹處,但不聚集在凸處。相比之下,當塗佈於模具主體12之表面上的吸附水2達到平衡狀態時,由前述因素引起的吸附水層之厚度的波動減 小。因此,在模具主體12之表面上之吸附水2達到平衡狀態時的階段,使模具主體12與脫模劑6彼此接觸的情況下,可實現具有均一厚度之吸附水層。 Alternatively, the adsorbed water 2 may be attached to the surface of the mold main body 12 by coating the surface with water. In this case, at the stage when the adsorbed water 2 coated on the surface of the mold main body 12 reaches an equilibrium state, or at a stage before the equilibrium state is reached (that is, a stage in which water molecule evaporation is dominant), the mold is made The main body 12 and the release agent 6 are in contact with each other. In the case where the surface of the mold main body 12 is applied with water, it is preferable that the mold main body 12 and the release agent 6 are brought into contact with each other at a stage when the adsorbed water 2 applied to the surface of the mold main body 12 reaches an equilibrium state. This is because in the case where the mold main body 12 and the releasing agent 6 are brought into contact with each other at the stage before the equilibrium state is reached, it is difficult to control the thickness of the adsorbed water layer on the entire surface of the mold main body 12 to be uniform. Since the amount of adsorbed water is different from the concave portion in the convex portion constituting the concave-convex pattern 13, it is difficult to make the thickness of the adsorbed water layer uniform. Particularly in the case where the surface of the mold main body 12 is hydrophilic, the adsorbed water collects in the concave portion but does not gather at the convex portion. In contrast, when the adsorbed water 2 coated on the surface of the mold main body 12 reaches an equilibrium state, the fluctuation of the thickness of the adsorbed water layer caused by the aforementioned factors is reduced. small. Therefore, in the stage when the adsorbed water 2 on the surface of the mold main body 12 reaches an equilibrium state, when the mold main body 12 and the releasing agent 6 are brought into contact with each other, an adsorbed aqueous layer having a uniform thickness can be realized.

(脫模劑) (release agent)

脫模劑6較佳是氟化合物。氟化合物較佳是氟系列矽烷偶合劑。可利用市售脫模劑,諸如由大金工業株式會社(Daikin Industries K.K.)製造之奧普托(Optool)DSX以及由住友3M株式會社(Sumitomo 3M K.K.)製造之尼維柯(Novec)EGC-1720。 The release agent 6 is preferably a fluorine compound. The fluorine compound is preferably a fluorine series decane coupling agent. Commercially available release agents such as Optool DSX manufactured by Daikin Industries KK and Novec EGC manufactured by Sumitomo 3M KK can be utilized. 1720.

或者,可利用其他已知的氟樹脂、烴系列潤滑劑、氟系列潤滑劑、氟系列矽烷偶合劑等。 Alternatively, other known fluororesins, hydrocarbon series lubricants, fluorine series lubricants, fluorine series decane coupling agents, and the like can be used.

氟系列樹脂之一個實例是聚四氟乙烯(polytetrafluoro ethylene,PTFE)。 An example of a fluorine series resin is polytetrafluoro ethylene (PTFE).

烴系列潤滑劑之實例包含:羧酸類,諸如硬脂酸以及油酸;酯類,諸如硬脂酸丁酯;磺酸類,諸如十八基磺酸;磷酸酯,諸如磷酸單十八基酯;醇類,諸如硬脂醇以及油醇;羧酸醯胺類,諸如硬脂酸醯胺;以及胺類,諸如硬脂胺。 Examples of hydrocarbon series lubricants include: carboxylic acids such as stearic acid and oleic acid; esters such as butyl stearate; sulfonic acids such as octadecyl sulfonic acid; phosphates such as monooctadecyl phosphate; Alcohols such as stearyl alcohol and oleyl alcohol; carboxylic acid amides such as decylamine stearate; and amines such as stearylamine.

氟系列潤滑劑之實例包含前述烴系列潤滑劑之烷基的一部分或全部被氟烷基或全氟聚醚基置換的潤滑劑。全氟聚醚基可以是全氟氧化亞甲基聚合物、全氟氧化乙烯聚合物、全氟-n-氧化丙烯聚合物(CF2CF2CF2O)n、全氟氧化異丙烯聚合物(CF(CF3)CF2O)n、前述聚合物之共聚物等。此處,下標n表示聚合度。 Examples of the fluorine series lubricant include a lubricant in which a part or all of the alkyl group of the aforementioned hydrocarbon series lubricant is replaced by a fluoroalkyl group or a perfluoropolyether group. The perfluoropolyether group may be a perfluorooxymethylene polymer, a perfluoroethylene oxide polymer, a perfluoro-n-propylene oxide polymer (CF 2 CF 2 CF 2 O) n , a perfluorooxidized isopropylene polymer. (CF(CF 3 )CF 2 O) n , a copolymer of the above polymer, or the like. Here, the subscript n indicates the degree of polymerization.

其他氟系列矽烷偶合劑較佳為每個分子中具有至少一個且較佳為一個至十個烷氧基矽烷基以及氯矽烷基,且分子量在200至10,000範圍內。烷氧基矽烷基之實例是-Si(OCH3)3以及-Si(OCH2CH3)3。同時,氯矽烷基之實例包含-Si(Cl)3。氟系列矽烷偶合劑之具體實例包含:十七氟-1,1,2,2-四-氫癸基三甲氧基矽烷;五氟苯基丙基二甲基氯矽烷;十三氟-1,1,2,2-四-氫辛基三乙氧基矽烷;以及十三氟-1,1,2,2-四-氫辛基三甲氧基矽烷。 Other fluoro-series decane coupling agents preferably have at least one, and preferably one to ten, alkoxyalkyl and perchloroalkyl groups per molecule, and have a molecular weight in the range of from 200 to 10,000. Examples of alkoxyalkylalkyl groups are -Si(OCH 3 ) 3 and -Si(OCH 2 CH 3 ) 3 . Meanwhile, examples of the chlorodecyl group include -Si(Cl) 3 . Specific examples of the fluorine-series decane coupling agent include: heptadecafluoro-1,1,2,2-tetrahydroindoletrimethoxydecane; pentafluorophenylpropyldimethylchlorodecane; and tridecafluoro-1. 1,2,2-tetrahydrogenyltriethoxydecane; and tridecafluoro-1,1,2,2-tetrahydrogenyltrimethoxydecane.

(脫模處理基底) (release treatment substrate)

脫模處理基底5是在對模具主體12施行脫模處理之前上面塗佈脫模劑6的基底。脫模處理基底5之形狀、結構、尺寸、材料等不受特別限制。然而,高度平坦的基底較佳。脫模處理基底5可以是單層結構或層壓結構。脫模處理基底5之材料可以自已知材料中酌情選出。此類材料之實例包含:矽、鎳、鋁、玻璃以及樹脂。這些材料可以單獨使用或以兩種或兩種以上之組合形式使用。脫模處理基底5可以是自製的,或可利用市售的基底。脫模處理基底5之厚度不受特別限制。然而,脫模處理基底5之厚度較佳是0.05毫米或更大,且更佳是0.1毫米或更大。如上所述設定下限的原因是,因為當模具主體12之凸處之頂面St與脫模劑6彼此接觸時,若脫模處理層5之厚度小於0.05毫米,則脫模處理基底5將撓曲,且可能不能確保均一的接觸狀態。 The release-treated substrate 5 is a substrate on which the release agent 6 is applied before the mold main body 12 is subjected to a release treatment. The shape, structure, size, material, and the like of the release-treated substrate 5 are not particularly limited. However, a highly flat substrate is preferred. The release treatment substrate 5 may be a single layer structure or a laminate structure. The material of the release-treated substrate 5 can be selected as appropriate from known materials. Examples of such materials include: ruthenium, nickel, aluminum, glass, and resins. These materials may be used singly or in combination of two or more kinds. The release treatment substrate 5 may be self-made or may utilize a commercially available substrate. The thickness of the release-treated substrate 5 is not particularly limited. However, the thickness of the release-treated substrate 5 is preferably 0.05 mm or more, and more preferably 0.1 mm or more. The reason why the lower limit is set as described above is because when the top surface St of the convex portion of the mold main body 12 and the releasing agent 6 are in contact with each other, if the thickness of the release-treated layer 5 is less than 0.05 mm, the release-treated substrate 5 will be scratched. It may not ensure a uniform contact state.

將脫模劑6塗佈於脫模處理基底5上之方法不受特別 限制。塗佈方法之實例包含:氣相沈積法;旋塗法+浸塗法;噴塗法;以及噴墨法。呈已塗佈狀態之於脫模處理基底5上之脫模劑6的膜厚度較佳在1奈米至100奈米範圍內,更佳在2奈米至50奈米範圍內,且最佳在3奈米至30奈米範圍內。 The method of applying the release agent 6 to the release-treated substrate 5 is not particularly limit. Examples of the coating method include: a vapor deposition method; a spin coating method + a dip coating method; a spray coating method; and an inkjet method. The film thickness of the release agent 6 in the coated state on the release-treated substrate 5 is preferably in the range of from 1 nm to 100 nm, more preferably in the range of from 2 nm to 50 nm, and is most preferably In the range of 3 nm to 30 nm.

(模具主體與脫模劑之間的接觸步驟) (contact step between the mold body and the release agent)

在將脫模劑6塗佈於脫模處理基底5上之後,使模具主體12靠近脫模處理基底5以便實現僅凹凸圖案13之凸處之上部與脫模劑6接觸的接觸狀態。「凸處之上部」是指包含凸處之頂面St之凸處部分以及距頂面St預定距離以內的凸處部分。這是因為,若凸處接觸脫模劑6以致整個凸處浸沒於脫模劑6中,則很難控制脫模層14之膜厚度。因此,較佳的狀況是,整體組態經設計,使脫模劑6之總體積小於對應於凹處之間隙的總體積,以致僅頂面St鄰近的部分接觸脫模劑6。若設計此類組態,則即使模具主體12與脫模處理基底5彼此靠近且壓抵於彼此,凹處中仍將存在間隙,因此整個凸處將不能浸沒於脫模劑6中。或者,在不提前設計脫模劑6之總體積的情況下,可以調節模具主體12與脫模處理基底5之間的距離以僅使凹凸圖案13之凸處之上部接觸脫模劑6。能夠藉由實現僅凹凸圖案13之凸處之上部與脫模劑6接觸的接觸狀態來得到在凸處之側面Ss上之脫模層14的大範圍膜厚控制。 After the release agent 6 is applied onto the release-treated substrate 5, the mold main body 12 is brought close to the release-treated substrate 5 so as to achieve a contact state in which only the upper portion of the convex portion of the concave-convex pattern 13 is in contact with the release agent 6. The "upper portion of the convex portion" means a convex portion including the top surface St of the convex portion and a convex portion within a predetermined distance from the top surface St. This is because it is difficult to control the film thickness of the release layer 14 if the convex portion contacts the release agent 6 so that the entire convex portion is immersed in the release agent 6. Therefore, it is preferable that the overall configuration is designed such that the total volume of the releasing agent 6 is smaller than the total volume corresponding to the gap of the recesses, so that only the portion adjacent to the top surface St contacts the releasing agent 6. If such a configuration is designed, even if the mold main body 12 and the release-treated substrate 5 are close to each other and pressed against each other, there will be a gap in the recess, so that the entire convex portion will not be immersed in the release agent 6. Alternatively, the distance between the mold main body 12 and the release-treated substrate 5 may be adjusted so that the upper portion of the convex portion of the concave-convex pattern 13 contacts the release agent 6 without designing the total volume of the release agent 6 in advance. A wide range of film thickness control of the release layer 14 on the side surface Ss of the convex portion can be obtained by realizing a contact state in which only the upper portion of the convex portion of the concave-convex pattern 13 is in contact with the release agent 6.

在將模具主體12與脫模處理基底5對準而具有預定的相對位置關係之後,使其彼此接觸。可以採用對準標記 來將模具主體12與脫模處理基底5對準。在實現所述接觸狀態之後,必要時可施加壓力。 After the mold main body 12 is aligned with the release-treated substrate 5 to have a predetermined relative positional relationship, they are brought into contact with each other. Alignment mark The mold body 12 is aligned with the release treatment substrate 5. After the contact state is achieved, pressure can be applied as necessary.

根據諸多條件,諸如脫模劑6之類型、塗佈於脫模處理基底5上之脫模劑6的量、模具主體12上之圖案的形狀、模具主體12上之吸附水2的量以及相對濕度,酌情設定維持模具主體12與脫模劑6接觸之時間長度。維持模具主體12與脫模劑6接觸之時間長度較佳在1秒至1小時之範圍內,更佳在10秒至10分鐘之範圍內,且又更佳在1分鐘至5分鐘之範圍內。 The amount of the release agent 6 applied to the release-treated substrate 5, the shape of the pattern on the mold main body 12, the amount of the adsorbed water 2 on the mold main body 12, and the relative, depending on various conditions, such as the type of the release agent 6, Humidity, as appropriate, sets the length of time during which the mold body 12 is brought into contact with the release agent 6. The length of time for maintaining the mold main body 12 in contact with the releasing agent 6 is preferably in the range of 1 second to 1 hour, more preferably in the range of 10 seconds to 10 minutes, and still more preferably in the range of 1 minute to 5 minutes. .

(脫模劑之擴散) (diffusion of release agent)

現將描述由於彎液面現象所致的脫模劑6之擴散。圖3說明模具主體12之凹凸圖案13的凸處之頂面St與脫模劑6之表面接觸的方式。在此情況下,在凸處之側面Ss與脫模劑6之表面之間的間隙中形成彎液面。隨後,脫模劑6在凹凸圖案13之整個表面上擴散,如圖4所說明(在圖4中由參考數字6a表示)。所擴散的脫模劑6a之量取決於維持凸處之頂面St與脫模劑6之表面接觸的時間長度、吸附水2之量等。在模具主體12與脫模劑6接觸的時間期間,脫模劑持續擴散,且脫模劑6最終擴散至凹凸圖案13之凹處之底面Sb。凹凸圖案13上之脫模劑6a與其表面結合以構成脫模層14。 The diffusion of the release agent 6 due to the meniscus phenomenon will now be described. 3 illustrates the manner in which the top surface St of the convex portion of the concave-convex pattern 13 of the mold main body 12 is in contact with the surface of the release agent 6. In this case, a meniscus is formed in the gap between the side surface Ss of the convex portion and the surface of the releasing agent 6. Subsequently, the release agent 6 is spread over the entire surface of the concavo-convex pattern 13, as illustrated in Fig. 4 (indicated by reference numeral 6a in Fig. 4). The amount of the release agent 6a to be diffused depends on the length of time during which the top surface St of the support protrusion is in contact with the surface of the release agent 6, the amount of adsorbed water 2, and the like. During the time when the mold main body 12 is in contact with the release agent 6, the release agent continues to diffuse, and the release agent 6 finally diffuses to the bottom surface Sb of the concave portion of the concave-convex pattern 13. The release agent 6a on the uneven pattern 13 is bonded to the surface thereof to constitute the release layer 14.

脫模劑6之擴散自凹凸圖案之凸處之頂面St進行至凹處之底面Sb。因此,有可能賦予脫模層14之自頂面St至底面Sb之厚度某種分佈。在使模具主體12與脫模劑6長 時間接觸的情況下,所擴散之脫模劑6a的量將變飽和。因此,亦有可能形成具有均一厚度的脫模層14。脫模劑6之擴散是一種物理現象,其進行與凹凸圖案13之凹處的寬度無關。因此,即使凹凸圖案包含寬度不同之凹處,簡單地藉由將所述接觸狀態維持一段使得脫模劑6能夠在寬度較大的凹處之底面處充分擴散的時間長度,亦可形成在所有凹處之底面處具有均一厚度之脫模層14。 The diffusion of the release agent 6 proceeds from the top surface St of the convex portion of the concave-convex pattern to the bottom surface Sb of the concave portion. Therefore, it is possible to impart a certain distribution of the thickness of the release layer 14 from the top surface St to the bottom surface Sb. In making the mold body 12 and the release agent 6 long In the case of time contact, the amount of the released release agent 6a will become saturated. Therefore, it is also possible to form the release layer 14 having a uniform thickness. The diffusion of the release agent 6 is a physical phenomenon which is performed regardless of the width of the concave portion of the concave-convex pattern 13. Therefore, even if the concave-convex pattern includes the recesses having different widths, the length of time during which the release agent 6 can be sufficiently diffused at the bottom surface of the recess having a larger width can be formed at all by simply maintaining the contact state for a period of time. A release layer 14 having a uniform thickness at the bottom surface of the recess.

(脫模層) (release layer)

完成對模具表面施行之脫模處理,且在使模具主體12接觸脫模劑6一段預定的時間之後,藉由使模具主體12與脫模處理基底5分離來形成脫模層14。 The release treatment of the surface of the mold is completed, and after the mold main body 12 is brought into contact with the release agent 6 for a predetermined period of time, the release layer 14 is formed by separating the mold main body 12 from the release treatment substrate 5.

脫模層14之厚度較佳在1奈米至5奈米範圍內。在賦予脫模層之厚度某種分佈的情況下,所述厚度分佈可以是頂面處之厚度在1奈米至5奈米之範圍內,並且底面處之厚度在0.1奈米至1奈米之範圍內,且為頂面處之厚度的70%或更小。注意,脫模層14之「厚度」是頂面St或底面Sb之平均厚度。 The thickness of the release layer 14 is preferably in the range of from 1 nm to 5 nm. In the case of imparting a certain distribution of the thickness of the release layer, the thickness distribution may be such that the thickness at the top surface is in the range of 1 nm to 5 nm, and the thickness at the bottom surface is 0.1 nm to 1 nm. Within the range, and is 70% or less of the thickness at the top surface. Note that the "thickness" of the release layer 14 is the average thickness of the top surface St or the bottom surface Sb.

藉由以下方法量測凸處之頂面St處與凹處之底面Sb處脫模劑厚度之差以及底面Sb處之厚度相對於頂面St處之厚度的百分比。首先,與凹凸圖案13分開地在模具主體12上形成線-空間圖案以用於量測厚度,所述圖案之尺寸使得原子力顯微鏡(Atomic Force microscope,AFM)之探針尖端能夠達到其凹處之底面Sb。AFM使用探針量測凹凸圖案之形狀,且將藉由量測所獲得之資料指定為參考 資料。接著,關於已施行脫模處理之模具1進行相同量測,且將關於階梯高度之資料與參考資料作比較。由此,可計算凸處之頂面St與凹處之底面Sb各自處之脫模劑厚度之差。接著,用橢圓偏光計量測無任何凸處或凹處之模具主體12之平坦區處的脫模層14之厚度。平坦區處之脫模層之厚度對應於凸處之頂面St處的脫模層之厚度。可基於藉由上文描述之方法獲得的頂面St與底面Sb處之脫模劑之間的厚度差、以及頂面St處脫模劑之厚度計算凹處之底面Sb處之厚度相對於凸處之頂面St處之厚度的百分比。 The difference between the thickness of the release agent at the top surface St of the projection and the bottom surface Sb of the recess and the thickness of the thickness at the bottom surface Sb with respect to the thickness at the top surface St were measured by the following method. First, a line-space pattern is formed on the mold body 12 separately from the concavo-convex pattern 13 for measuring the thickness such that the probe tip of an Atomic Force microscope (AFM) can reach its recess. The bottom surface Sb. The AFM uses a probe to measure the shape of the concave and convex pattern, and specifies the data obtained by the measurement as a reference. data. Next, the same measurement is performed on the mold 1 on which the mold release treatment has been performed, and the data on the step height is compared with the reference material. Thereby, the difference in the thickness of the release agent at each of the top surface St of the convex portion and the bottom surface Sb of the concave portion can be calculated. Next, the thickness of the release layer 14 at the flat portion of the mold body 12 without any protrusions or recesses is measured by ellipsometry. The thickness of the release layer at the flat zone corresponds to the thickness of the release layer at the top surface St of the projection. The thickness at the bottom surface Sb of the recess can be calculated based on the difference in thickness between the top surface St and the release agent at the bottom surface Sb obtained by the method described above, and the thickness of the release agent at the top surface St. The percentage of the thickness at the top surface St.

藉由以下方法量測凸處之側面Ss上自凸處之頂面St至凹處之底面Sb的厚度分佈。首先,藉由壓印採用尚未施行脫模處理之模具主體12以及採用已施行脫模處理之模具主體12來形成抗蝕劑圖案。隨後,藉由掃描電子顯微鏡量測各抗蝕劑圖案中凹凸圖案之截面形狀。根據所量測之截面形狀獲得傾斜角以及凸處之寬度,且將已施行脫模處理之情況與尚未施行脫模處理之情況作比較。由此,可計算側壁Ss上自凸處之頂面St至凹處之底面Sb的脫模層14之厚度分佈。 The thickness distribution from the top surface St of the convex portion to the bottom surface Sb of the concave portion on the side surface Ss of the convex portion is measured by the following method. First, a resist pattern is formed by embossing a mold main body 12 which has not been subjected to mold release treatment, and a mold main body 12 which has been subjected to mold release treatment. Subsequently, the cross-sectional shape of the concavo-convex pattern in each resist pattern was measured by a scanning electron microscope. The inclination angle and the width of the convex portion were obtained from the measured cross-sectional shape, and the case where the mold release treatment was performed was compared with the case where the mold release treatment was not performed. Thereby, the thickness distribution of the release layer 14 on the side wall Ss from the top surface St of the convex portion to the bottom surface Sb of the concave portion can be calculated.

在下文中,將描述本發明之操作效果。本發明之脫模處理方法可藉由在奈米壓印裝置中提供脫模處理基底代替奈米壓印基底在一般奈米壓印裝置內部進行。藉由在奈米壓印裝置內部執行脫模處理方法能避免自奈米壓印裝置之內部移去模具1以及在各別裝置中處理模具1以進行脫模處理的麻煩,由此提高奈米壓印操作之生產力。另外亦可 避免外來物質在移去及傳送模具時附著於模具1之風險。 Hereinafter, the operational effects of the present invention will be described. The mold release treatment method of the present invention can be carried out inside a general nanoimprint apparatus by providing a release treatment substrate in a nanoimprinting apparatus instead of a nanoimprint substrate. By performing the mold release processing method inside the nanoimprinting apparatus, it is possible to avoid the trouble of removing the mold 1 from the inside of the nanoimprinting apparatus and processing the mold 1 in the respective apparatus to perform the mold release treatment, thereby improving the nanometer. The productivity of the imprinting operation. Also The risk of foreign substances adhering to the mold 1 when removing and transferring the mold is avoided.

在本發明之脫模處理方法中,有可能形成脫模層14,使其厚度自凸處之上表面St朝向凹處之底面Sb逐漸變薄。藉由利用這一能力,本發明之脫模處理方法有可能使模具主體之凹凸圖案13之錐角接近90度,但這一效應之程度將隨處理條件而變化。另外,脫模層14之厚度分佈實際上改進經脫模層14塗佈之模具1之凹凸圖案13的成直角性,由此進一步增加圖案之高度。 In the mold release treatment method of the present invention, it is possible to form the release layer 14 such that its thickness gradually becomes thinner from the upper surface St of the convex portion toward the bottom surface Sb of the concave portion. By utilizing this ability, the demolding method of the present invention makes it possible to bring the taper angle of the concave-convex pattern 13 of the mold main body to approximately 90 degrees, but the extent of this effect will vary depending on the processing conditions. Further, the thickness distribution of the release layer 14 actually improves the right angle of the concave-convex pattern 13 of the mold 1 coated by the release layer 14, thereby further increasing the height of the pattern.

具體而言,藉由壓印抗蝕劑膜獲得的抗蝕劑圖案之形狀因其成直角性較大而在壓印步驟之後在處理基底之步驟中變得更有利。然而,因為凹凸圖案之線寬度變得更窄,製造模具時很難形成具有高成直角性之凹凸圖案。因此,模具上凹凸圖案之形狀將變得成錐形且其尖頭處變窄。使用此類模具形成之抗蝕劑圖案之形成必然亦會成錐形。在此類情況下,問題是基底之處理精度將降低。因此,希望矯正模具上成錐形的凹凸圖案以增加其在圖案形成之後的步驟中的成直角性。根據本發明之脫模處理方法,可形成脫模層14,其自凸處之頂面St至凹處之底面Sb逐漸變薄。因此,有可能實現此類矯正步驟。 Specifically, the shape of the resist pattern obtained by imprinting the resist film becomes more advantageous in the step of processing the substrate after the imprinting step because of its large right angle. However, since the line width of the concave-convex pattern becomes narrower, it is difficult to form a concave-convex pattern having a high right angle when manufacturing a mold. Therefore, the shape of the concave-convex pattern on the mold will become tapered and its tip will be narrowed. The formation of a resist pattern formed using such a mold necessarily also becomes tapered. In such cases, the problem is that the processing accuracy of the substrate will be reduced. Therefore, it is desirable to correct the concavo-convex pattern on the mold to increase its right angle in the step after pattern formation. According to the mold release treatment method of the present invention, the release layer 14 can be formed which is gradually thinned from the top surface St of the convex portion to the bottom surface Sb of the concave portion. Therefore, it is possible to implement such a corrective step.

本發明之脫模處理方法利用脫模劑6在吸附水2中之擴散。因此,可形成脫模層14,以使其按相同比率自凸處之頂面St至凹處之底面Sb逐漸變薄,與凹凸圖案13之凸處以及凹處之寬度無關。 The mold release treatment method of the present invention utilizes the diffusion of the release agent 6 in the adsorbed water 2. Therefore, the release layer 14 can be formed so as to be gradually thinned from the top surface St of the convex portion to the bottom surface Sb of the concave portion at the same ratio regardless of the convex portion of the concave-convex pattern 13 and the width of the concave portion.

可以考慮使用除水以外的溶劑來擴散脫模劑6。然 而,出於以下原因,使用水較佳。在利用除水以外的溶劑來擴散脫模劑6之情況下,必須以與如上所述利用水之情況相同的方式,在環境中之溶劑的氣相組分與模具主體之表面上的液相組分之間實現平衡狀態。因此,必須改進模具主體之表面相對於有機溶劑之親和力,以使有機溶劑吸附於模具主體之表面上。然而,情況往往是,模具主體(一般由諸如矽、金屬、氧化物、石英之材料構成)之表面的性質,在經過脫模處理之前的清潔步驟改變之後,具有親水性。亦即,因為模具主體之表面在清潔之後具有親水性,所以有機溶劑將容易地揮發。因此,使有機溶劑保持在模具之表面上作為吸附溶劑而且在具低親和力之模具主體之表面上形成有機溶劑之彎液面是極其困難的。 It is conceivable to use a solvent other than water to diffuse the release agent 6. Of course However, it is preferred to use water for the following reasons. In the case of using a solvent other than water to diffuse the releasing agent 6, it is necessary to use a liquid phase component of the solvent in the environment and a liquid phase on the surface of the mold main body in the same manner as in the case of using water as described above. A balance between the components is achieved. Therefore, it is necessary to improve the affinity of the surface of the mold body with respect to the organic solvent so that the organic solvent is adsorbed on the surface of the mold body. However, it is often the case that the properties of the surface of the mold body (generally composed of a material such as tantalum, metal, oxide, quartz) are hydrophilic after the cleaning step before the mold release treatment is changed. That is, since the surface of the mold main body is hydrophilic after cleaning, the organic solvent will easily volatilize. Therefore, it is extremely difficult to maintain the organic solvent on the surface of the mold as an adsorption solvent and to form a meniscus of an organic solvent on the surface of the mold body having low affinity.

在應用化學氣相沈積法作為替代方法之情況下,可賦予脫模層自凸處之頂面St至凹處之底面Sb的某種厚度分佈。然而,在應用化學氣相沈積法之情況下,當凹處之開口較大時,脫模層之厚度將變得較大。因此,在模具具有凹凸圖案,且凹凸圖案之凹處具有均一尺寸之開口的情況下,化學氣相沈積法是有效的。然而,在模具具有凹凸圖案,且凹凸圖案之凹處具有不同尺寸之開口的情況下,脫模層之塗佈在開口較小之部分處可能變得不足。另外,若沈積條件適於凹處之開口較小之部分處脫模層之厚度,則脫模層之厚度在開口較大之部分處將變得過大。本發明之脫模處理方法中不出現此類問題。因此,本發明之脫模處理方法可有效作為賦予脫模層自凸處之頂面St至凹處之 底面Sb的某種厚度分佈的方法。 In the case where a chemical vapor deposition method is employed as an alternative method, a certain thickness distribution of the release layer from the top surface St of the convex portion to the bottom surface Sb of the concave portion can be imparted. However, in the case of applying the chemical vapor deposition method, when the opening of the recess is large, the thickness of the release layer becomes large. Therefore, the chemical vapor deposition method is effective in the case where the mold has a concavo-convex pattern and the recesses of the concavo-convex pattern have openings of uniform size. However, in the case where the mold has a concavo-convex pattern and the recesses of the concavo-convex pattern have openings of different sizes, the application of the release layer may become insufficient at a portion where the opening is small. Further, if the deposition conditions are suitable for the thickness of the release layer at the portion where the opening of the recess is small, the thickness of the release layer becomes excessive at the portion where the opening is large. Such problems do not occur in the mold release treatment method of the present invention. Therefore, the demolding treatment method of the present invention can be effectively used as the top surface St to the concave portion of the release layer from the convex portion. A method of distributing a certain thickness of the bottom surface Sb.

[採用本發明模具之奈米壓印方法] [Nano imprint method using the mold of the present invention]

在下文中,將描述應用本發明模具之奈米壓印方法的一個實施例。 Hereinafter, an embodiment of a nanoimprint method to which the mold of the present invention is applied will be described.

本實施例之奈米壓印方法採用模具1,諸如圖1所說明之模具1。用可光致固化的抗蝕劑塗佈由石英形成之奈米壓印基底。接著,將模具1壓抵於奈米壓印基底之塗佈有抗蝕劑的表面。隨後,自奈米壓印基底之背面照射紫外光以使抗蝕劑固化,且使模具1與抗蝕劑分離。 The nanoimprint method of this embodiment employs a mold 1, such as the mold 1 illustrated in FIG. A nanoimprint substrate formed of quartz is coated with a photocurable resist. Next, the mold 1 is pressed against the surface of the nanoimprint substrate coated with the resist. Subsequently, ultraviolet light is irradiated from the back surface of the nanoimprint substrate to cure the resist, and the mold 1 is separated from the resist.

(抗蝕劑) (resist)

抗蝕劑不受特別限制。在本實施例中,可採用藉由向可聚合化合物中添加光聚合引發劑(2質量%)以及氟單體(0.1質量%至1質量%)所製備的抗蝕劑。必要時可另外添加抗氧化劑(約1質量%)。由上述程序製造之抗蝕劑可由波長為360奈米之紫外光來固化。關於具有差溶解性之抗蝕劑,較佳添加少量丙酮或乙酸乙酯(acetic ether)來溶解樹脂,隨後移除所述溶劑。注意,在本實施例中,所述抗蝕劑是一種可光致固化的材料。然而,本發明不限於此類組態,且或者可採用熱可固化的材料。 The resist is not particularly limited. In the present embodiment, a resist prepared by adding a photopolymerization initiator (2% by mass) and a fluoromonomer (0.1% by mass to 1% by mass) to the polymerizable compound can be used. An antioxidant (about 1% by mass) may be additionally added as necessary. The resist produced by the above procedure can be cured by ultraviolet light having a wavelength of 360 nm. Regarding the resist having poor solubility, it is preferred to add a small amount of acetone or ethyl acetate to dissolve the resin, followed by removal of the solvent. Note that in the present embodiment, the resist is a photocurable material. However, the invention is not limited to such configurations, and either a thermally curable material may be employed.

可聚合化合物之實例包含:丙烯酸苯甲酯(比思科(Biscoat)#160,由大阪有機化工株式會社(Osaka Organic Chemical Industries,K.K)製造)、乙基卡必醇丙烯酸酯(比思科#190,由大阪有機化工株式會社(Osaka Organic Chemical Industries,K.K)製造)、聚丙二醇二丙烯酸酯(奧 尼克斯(Aronix)M-220,由東亞合成株式會社(TOAGOSEI K.K.)製造)、以及三羥甲基丙烷PO變性的三丙烯酸酯(奧尼克斯M-310,由東亞合成株式會社(TOAGOSEI K.K.)製造)。另外,由以下化學式1表示之化合物A亦可用作可聚合化合物。 Examples of the polymerizable compound include: benzyl acrylate (Biscoat #160, manufactured by Osaka Organic Chemical Industries, KK), ethyl carbitol acrylate (than Cisco #190, Polypropylene glycol diacrylate (manufactured by Osaka Organic Chemical Industries, KK) Aronix M-220, manufactured by Toago Seiki Co., Ltd. (TOAGOSEI KK), and Trimethylolpropane PO-denatured triacrylate (Onyx M-310, by Toagosei KK) Manufacturing). Further, the compound A represented by the following Chemical Formula 1 can also be used as the polymerizable compound.

光聚合引發劑之實例包含烷基苯基酮型光聚合引發劑,諸如2-(二甲基胺基)-2-[(4-甲基苯基)甲基]-1-[4-(4-嗎啉基)苯基]-1-丁酮(豔佳固379,由豐通化學株式會社(Toyotsu Chemiplas K.K.)製造) Examples of the photopolymerization initiator include an alkylphenyl ketone type photopolymerization initiator such as 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-[4-( 4-morpholinyl)phenyl]-1-butanone (Yanjiagu 379, manufactured by Toyotsu Chemiplas KK)

另外,由以下化學式2表示之化合物B可用作氟單體。 Further, the compound B represented by the following Chemical Formula 2 can be used as a fluorine monomer.

在藉由噴墨法塗佈抗蝕劑的情況下,較佳利用藉由以48:48:3:1之質量比混合由化學式1表示之化合物A、奧尼克斯M-220、豔佳固379以及由化學式2表示之化合物B所形成的可光致固化的抗蝕劑。 In the case where the resist is applied by the inkjet method, it is preferred to use the compound A represented by Chemical Formula 1, the Onyx M-220, and Yanjiagu by mixing at a mass ratio of 48:48:3:1. 379 and a photocurable resist formed of the compound B represented by Chemical Formula 2.

在本發明中,抗蝕劑材料之黏度在8厘泊(cP)至20厘泊範圍內,且抗蝕劑材料之表面能在25毫牛頓/公尺至35毫牛頓/公尺範圍內。此處,抗蝕劑材料之黏度是用RE-80L旋轉黏度計(由東喜工業株式會社(Touki Industries K.K.)製造)在25±0.2℃下量測。量測期間之旋轉速度是:在黏度大於或等於0.5厘泊且小於5厘泊時,100轉/分;在黏度大於或等於5厘泊且小於10厘泊時,50轉/分;在黏度大於或等於10厘泊且小於30厘泊時,20轉/分;且在黏度大於或等於30厘泊且小於60厘泊時,10轉/分。使用H.舒米特(H.Schmitt)等人,「UV奈米壓印材料:表面能、殘餘層以及壓印品質(UV nanoimprint materials:Surface energies,residual layers,and imprint quality)」,真空科學與技術雜誌B(J.Vac.Sci.Technol.B.),第25卷,第3期,第785-790頁,2007中所揭露之技術,量測抗蝕劑材料之表面能。具體而言,量測已經受UV臭氧處理且表面已經奧普托(Optool)DSX(由大金工業株式會社(Daikin Industries K.K.)製造)處理之矽基底的表面能,隨後根據抗蝕劑材料與基底之接觸角來計算抗蝕劑材料之表面能。 In the present invention, the resist material has a viscosity in the range of 8 centipoise (cP) to 20 centipoise, and the surface energy of the resist material is in the range of 25 millinewtons/meter to 35 millinewtons/meter. Here, the viscosity of the resist material was measured at 25 ± 0.2 ° C using a RE-80L rotational viscometer (manufactured by Touki Industries K.K.). The rotation speed during the measurement is: 100 rpm when the viscosity is greater than or equal to 0.5 centipoise and less than 5 centipoise; 50 rpm when the viscosity is greater than or equal to 5 centipoise and less than 10 centipoise; 10 rpm when it is greater than or equal to 10 centipoise and less than 30 centipoise; and 10 rpm when the viscosity is greater than or equal to 30 centipoise and less than 60 centipoise. Using H. Schmitt et al., "UV nanoimprint materials: surface energies, residual layers, and imprint quality", vacuum science The surface energy of the resist material is measured by the technique disclosed in Journal of Technology B (J. Vac. Sci. Technol. B.), Vol. 25, No. 3, pp. 785-790, 2007. Specifically, the surface energy of the ruthenium substrate which has been subjected to UV ozone treatment and whose surface has been treated by Optool DSX (manufactured by Daikin Industries KK) is measured, and then according to the resist material and The contact angle of the substrate is used to calculate the surface energy of the resist material.

(奈米壓印基底) (nano imprinted substrate)

在模具1具有透光性的情況下,奈米壓印基底在其形 狀、結構、尺寸或材料方面不受限制,且可根據預定用途加以選擇。表述「透光性」是指當光進入與形成有樹脂膜之側相對的基底側時,使得樹脂膜能夠充分固化的光透過的程度。為圖案轉移目標之奈米壓印基底之表面是塗佈有抗蝕劑的表面。關於基底之形狀,在例如欲製造資料記錄媒體的情況下,可利用具有圓盤形狀之基底。關於基底之結構,可採用單層基底,或可採用層壓基底。關於基底之材料,材料可由用於基底之已知材料中選出,諸如矽、鎳、鋁、玻璃以及樹脂。這些材料可以單獨利用或組合利用。基底之厚度不受特別限制,且可根據預定用途選擇。然而,基底之厚度較佳是0.05毫米或更大,且更佳是0.1毫米或更大。若基底之厚度小於0.05毫米,則基底在與模具接觸期間將可能撓曲,導致不能確保均一的緊密接觸狀態。 In the case where the mold 1 has light transmissivity, the nanoimprint substrate is in its shape It is not limited in terms of shape, structure, size or material and can be selected according to the intended use. The expression "transparency" refers to the extent to which light that is sufficiently cured by the resin film when light enters the base side opposite to the side on which the resin film is formed. The surface of the nanoimprint substrate which is the target of the pattern transfer is a surface coated with a resist. Regarding the shape of the substrate, for example, in the case of manufacturing a data recording medium, a substrate having a disk shape can be utilized. Regarding the structure of the substrate, a single layer substrate may be employed, or a laminate substrate may be employed. Regarding the material of the substrate, the material may be selected from known materials for the substrate, such as ruthenium, nickel, aluminum, glass, and resins. These materials can be used alone or in combination. The thickness of the substrate is not particularly limited and may be selected according to the intended use. However, the thickness of the substrate is preferably 0.05 mm or more, and more preferably 0.1 mm or more. If the thickness of the substrate is less than 0.05 mm, the substrate may be deflected during contact with the mold, resulting in a failure to ensure a uniform close contact state.

同時,在模具1不具有透光性的情況下,石英基底較佳用作奈米壓印基底以使得抗蝕劑能夠曝光。石英基底不受特別限制,只要其具有透光性且厚度為0.3毫米或更大,且可根據預定用途酌情選擇。關於透光性,對於波長為200奈米或更大之光自與形成有樹脂膜之側相對的基底側至形成有樹脂膜之基底側至少5%之透光率是足夠的。可採用具有塗佈有矽烷偶合劑之表面的石英基底。另外,可採用上面層壓有由鉻、鎢、鉭、鈦、鎳、銀、鉑、金等形成之金屬層及/或由CrO2、WO2、TiO2等形成之金屬氧化物層的石英基底。金屬層或金屬氧化物層之厚度較佳是30奈米或更小,且更佳是20奈米或更小。若遮罩層之厚 度超過30奈米,則UV透射率劣化,且更可能發生抗蝕劑固化失敗。注意,可用矽烷偶合劑塗佈層壓層之表面。石英基底之厚度較佳是0.3毫米或更大。若石英基底之厚度小於0.3毫米,則很可能在處理期間或由於壓印期間之壓力而受損。 Meanwhile, in the case where the mold 1 does not have light transmissivity, the quartz substrate is preferably used as a nanoimprint substrate to enable exposure of the resist. The quartz substrate is not particularly limited as long as it has light transmittance and a thickness of 0.3 mm or more, and may be selected as appropriate according to the intended use. Regarding the light transmittance, it is sufficient for light having a wavelength of 200 nm or more to be at least 5% of light transmittance from the side of the substrate opposite to the side on which the resin film is formed to the side of the substrate on which the resin film is formed. A quartz substrate having a surface coated with a decane coupling agent may be employed. Further, a quartz layer laminated with a metal layer formed of chromium, tungsten, tantalum, titanium, nickel, silver, platinum, gold, or the like and/or a metal oxide layer formed of CrO 2 , WO 2 , TiO 2 or the like may be used. Substrate. The thickness of the metal layer or the metal oxide layer is preferably 30 nm or less, and more preferably 20 nm or less. If the thickness of the mask layer exceeds 30 nm, the UV transmittance is deteriorated, and the resist curing failure is more likely to occur. Note that the surface of the laminate layer may be coated with a decane coupling agent. The thickness of the quartz substrate is preferably 0.3 mm or more. If the thickness of the quartz substrate is less than 0.3 mm, it is likely to be damaged during processing or due to pressure during imprinting.

奈米壓印基底可具有平台型結構。 The nanoimprint substrate can have a platform type structure.

(抗蝕劑塗佈步驟) (resist coating step)

應用可使預定量之液滴排列在預定位置之方法(諸如噴墨法以及分配法)以用抗蝕劑塗佈奈米壓印基底。當將抗蝕劑之液滴排列在奈米壓印基底上時,根據所希望之液滴量,可使用噴墨列印機或分配器。舉例而言,在液滴量小於100奈升(nl)的情況下,可選擇噴墨列印機,且在液滴量是100奈升或更大的情況下,可選擇分配器。 A method of arranging a predetermined amount of droplets at a predetermined position, such as an inkjet method and a dispensing method, to coat a nanoimprint substrate with a resist is applied. When the droplets of the resist are arranged on the nanoimprint substrate, an ink jet printer or dispenser can be used depending on the desired amount of droplets. For example, in the case where the amount of droplets is less than 100 nanoliters (nl), the ink jet printer can be selected, and in the case where the amount of droplets is 100 nanoliters or more, the dispenser can be selected.

將抗蝕劑排出噴嘴之噴墨頭的實例包含壓電式、熱動式以及靜電式。在這些實例中,壓電式噴墨頭較佳,其中液滴量(各排列之液滴中抗蝕劑的量)以及排出速度可調節。液滴量以及排出速度在將抗蝕劑液滴排列於奈米壓印基底上之前設定以及調節。舉例而言,較佳在模具之凹凸圖案之空間體積較大的區域,將液滴量調節為較大,而在模具之凹凸圖案之空間體積較小的區域,調節為較小。此類調節根據液滴排出量(各排出之液滴中抗蝕劑的量)酌情控制。具體而言,在液滴量設定為5皮升(pl)的情況下,控制液滴排出量為1皮升之噴墨頭以使液滴排於同一位置上5次。在本發明中,液滴量在1皮升至10皮升範圍 內。藉由用共焦顯微鏡或類似物量測在相同條件下排列在基底上之液滴的三維形狀以及藉由根據其形狀計算液滴之體積來獲得液滴量。 Examples of the ink jet head that discharges the resist from the nozzle include piezoelectric type, thermal type, and electrostatic type. In these examples, a piezoelectric ink jet head is preferred in which the amount of droplets (the amount of resist in each of the aligned droplets) and the discharge speed are adjustable. The amount of droplets and the discharge rate are set and adjusted before the resist droplets are arranged on the nanoimprint substrate. For example, it is preferable to adjust the amount of droplets to be large in a region where the volume of the concave-convex pattern of the mold is large, and to adjust to be small in a region where the volume of the concave-convex pattern of the mold is small. Such adjustment is controlled as appropriate depending on the amount of droplet discharge (the amount of resist in each discharged droplet). Specifically, in the case where the amount of droplets is set to 5 picolitres (pl), the inkjet head whose droplet discharge amount is 1 picoliter is controlled so that the droplets are discharged at the same position five times. In the present invention, the amount of droplets ranges from 1 picoliter to 10 picolitres Inside. The amount of droplets is obtained by measuring the three-dimensional shape of the droplets arranged on the substrate under the same conditions with a confocal microscope or the like and by calculating the volume of the droplets according to the shape thereof.

在如上所述調節液滴量之後,根據預定液滴排列圖案將液滴排列在奈米壓印基底上。 After adjusting the amount of droplets as described above, the droplets are arranged on the nanoimprint substrate according to a predetermined droplet arrangement pattern.

在應用旋塗法或浸塗法的情況下,用溶劑稀釋抗蝕劑以便實現預定厚度。在旋塗法的情況下,控制旋轉速度,且在浸塗法的情況下,控制拔起速度,以在奈米壓印基底上形成均一的塗佈膜。 In the case of applying a spin coating method or a dip coating method, the resist is diluted with a solvent to achieve a predetermined thickness. In the case of the spin coating method, the rotation speed is controlled, and in the case of the dip coating method, the pulling speed is controlled to form a uniform coating film on the nanoimprint substrate.

(壓印步驟) (imprint step)

在使模具與抗蝕劑接觸之前,藉由對模具與基底之間的氛圍進行減壓或藉由使模具與基底之間的氛圍成真空來減少殘餘氣體。然而,抗蝕劑在真空環境中固化之前可能會揮發,導致維持均一的膜厚度存在困難。因此,較佳藉由使基底與模具之間的氛圍成氦氛圍或經減壓之氦氛圍來減少殘餘氣體的量。氦穿過石英基底,因此殘餘氣體(氦)的量將逐漸減少。因為氦穿過石英基底需要時間,所以更佳採用經減壓之氦氛圍。減壓之氦氛圍之壓力較佳在1千帕至90千帕範圍內,且更佳在1千帕至10千帕範圍內。 The residual gas is reduced by depressurizing the atmosphere between the mold and the substrate or by vacuuming the atmosphere between the mold and the substrate before contacting the mold with the resist. However, the resist may volatilize prior to curing in a vacuum environment, resulting in difficulty in maintaining a uniform film thickness. Therefore, it is preferable to reduce the amount of residual gas by making the atmosphere between the substrate and the mold into an atmosphere or a decompression atmosphere. The crucible passes through the quartz substrate, so the amount of residual gas (氦) will gradually decrease. Since it takes time to pass through the quartz substrate, it is better to use a decompressed atmosphere. The pressure of the atmosphere under reduced pressure is preferably in the range of 1 kPa to 90 kPa, and more preferably in the range of 1 kPa to 10 kPa.

在將模具與塗佈有抗蝕劑之基底對準而具有預定的位置關係之後,使其彼此接觸。較佳採用對準標記來進行對準操作。對準標記由凹凸圖案形成,其可藉由光學顯微鏡或藉由莫而干涉技術(Moire interference technique)來偵測。定位精度較佳是10微米或更小,更佳是1微米或更 小,且最佳是100奈米或更小。 After the mold is aligned with the substrate coated with the resist to have a predetermined positional relationship, they are brought into contact with each other. Alignment marks are preferably used for the alignment operation. The alignment marks are formed by a concavo-convex pattern which can be detected by an optical microscope or by a Moire interference technique. The positioning accuracy is preferably 10 micrometers or less, more preferably 1 micrometer or more. Small, and the best is 100 nm or less.

將模具以100千帕(kPa)至10兆帕(MPa)範圍內之壓力壓抵於基底。當壓力較高時,可促進抗蝕劑流動,壓縮殘餘氣體,將殘餘氣體溶解於抗蝕劑中,且促進氦穿過石英基底。然而,若壓力過高,則在模具接觸基底時,若有外物插在模具與基底之間,模具以及基底可能受損。因此,壓力較佳在100千帕至10兆帕範圍內,更佳在100千帕至5兆帕範圍內,且最佳在100千帕至1兆帕範圍內。設定壓力下限為100千帕的原因在於,當在所述氛圍內進行壓印時,在模具與基底之間的間隙充滿液體的情況下,模具與基底之間的間隙由大氣壓(約101千帕)加壓。 The mold is pressed against the substrate at a pressure in the range of 100 kilopascals (kPa) to 10 megapascals (MPa). When the pressure is high, the resist flow is promoted, the residual gas is compressed, the residual gas is dissolved in the resist, and the crucible is promoted to pass through the quartz substrate. However, if the pressure is too high, the mold and the substrate may be damaged if a foreign object is inserted between the mold and the substrate when the mold contacts the substrate. Therefore, the pressure is preferably in the range of 100 kPa to 10 MPa, more preferably in the range of 100 kPa to 5 MPa, and most preferably in the range of 100 kPa to 1 MPa. The reason why the lower limit of the pressure is set to 100 kPa is that when the embossing is performed in the atmosphere, the gap between the mold and the substrate is filled with liquid, and the gap between the mold and the substrate is from atmospheric pressure (about 101 kPa). ) Pressurization.

在將模具壓抵於奈米壓印基底且形成抗蝕劑膜後,使模具與抗蝕劑膜分離。作為分離法之一個實例,可固持模具與奈米壓印基底中之一者的外緣部分,同時藉由真空抽吸固持模具與奈米壓印基底中另一者之背面,且使外緣之固持部分或背面之固持部分在與按壓方向相反之方向上相對移動。 After the mold is pressed against the nanoimprint substrate and a resist film is formed, the mold is separated from the resist film. As an example of the separation method, the outer edge portion of one of the mold and the nanoimprint substrate may be held while the back of the other of the mold and the nanoimprint substrate is held by vacuum suction, and the outer edge is provided The holding portion or the holding portion of the back side relatively moves in a direction opposite to the pressing direction.

(反覆脫模處理) (repeated demoulding treatment)

在奈米壓印中,在反覆進行壓印操作時,模具1之表面上的脫模劑6磨損。因此,較佳在每歷經一預定次數之按壓步驟之後或根據脫模層之磨損程度(脫模劑之塗佈率的減小),對模具施行脫模處理。壓印操作後之脫模處理與上文描述之脫模處理相同,其在製造模具1時施行。在模具1表面之脫模劑6變薄的部分,且特定言之,在模具主 體12曝露之部分,存在大量吸附水2。在脫模劑6利用吸附水2之彎液面擴散的情況下,脫模劑6將集中在脫模劑6變薄之部分處。由此,可以修補脫模層14,同時維持脫模層14自凸處之頂面St至凹處之底面Sb的厚度分佈。 In the nanoimprinting, the release agent 6 on the surface of the mold 1 is worn out when the imprinting operation is repeated. Therefore, it is preferred to subject the mold to a mold release treatment after each predetermined number of pressing steps or according to the degree of wear of the release layer (reduction in the coating rate of the release agent). The release treatment after the embossing operation is the same as the release treatment described above, which is performed at the time of manufacturing the mold 1. In the portion where the release agent 6 on the surface of the mold 1 is thinned, and in particular, in the mold main In the exposed portion of the body 12, there is a large amount of adsorbed water 2. In the case where the release agent 6 is diffused by the meniscus of the adsorbed water 2, the release agent 6 is concentrated at the portion where the release agent 6 is thinned. Thereby, the release layer 14 can be repaired while maintaining the thickness distribution of the release layer 14 from the top surface St of the convex portion to the bottom surface Sb of the concave portion.

[圖案化基底的製造方法] [Method of Manufacturing Patterned Substrate]

接著,將描述本發明之圖案化基底的製造方法之一個實施例。本實施例應用上文描述之奈米壓印方法來製造圖案化基底。 Next, an embodiment of a method of manufacturing the patterned substrate of the present invention will be described. This embodiment applies the nanoimprint method described above to fabricate a patterned substrate.

首先,在欲處理之基底之表面上形成已藉由上文描述之奈米壓印方法形成有圖案之抗蝕劑膜。隨後,使用上面形成有圖案之抗蝕劑膜作為遮罩進行蝕刻,以形成對應於抗蝕劑膜之凹凸圖案的凹凸圖案。由此,獲得具有預定圖案之圖案化基底(複製品)。 First, a resist film formed with a pattern by the nanoimprint method described above is formed on the surface of the substrate to be processed. Subsequently, etching is performed using the resist film on which the pattern is formed as a mask to form a concavo-convex pattern corresponding to the concavo-convex pattern of the resist film. Thereby, a patterned substrate (replica) having a predetermined pattern is obtained.

在欲處理之基底具層狀結構且其表面上包含遮罩層的情況下,在具有遮罩層之欲處理之基底的表面上形成已藉由上文描述之奈米壓印方法形成有圖案之抗蝕劑膜。接著,使用抗蝕劑膜作為遮罩進行乾蝕刻,以在遮罩層中形成對應於抗蝕劑膜之凹凸圖案的凹凸圖案。此後,另外用遮罩層作為蝕刻終止層進行乾蝕刻,以在基底中形成凹凸圖案。由此,獲得具有預定圖案之圖案化基底。 In the case where the substrate to be treated has a layered structure and a mask layer is included on the surface thereof, a pattern formed by the nanoimprint method described above is formed on the surface of the substrate to be treated having the mask layer. Resist film. Next, dry etching is performed using a resist film as a mask to form a concavo-convex pattern corresponding to the concavo-convex pattern of the resist film in the mask layer. Thereafter, dry etching is additionally performed using the mask layer as an etch stop layer to form a concavo-convex pattern in the substrate. Thereby, a patterned substrate having a predetermined pattern is obtained.

乾蝕刻法不受特別限制,只要其能夠在基底中形成凹凸圖案即可,且可根據預定用途選擇。可應用之乾蝕刻法的實例包含:離子銑削法;RIE(反應離子蝕刻)法;濺射蝕刻法;等。在這些方法中,離子銑削(milling)法以 及RIE法特別較佳。 The dry etching method is not particularly limited as long as it can form a concavo-convex pattern in the substrate, and can be selected according to the intended use. Examples of dry etching methods that can be applied include: ion milling; RIE (reactive ion etching); sputtering etching; In these methods, the ion milling method The RIE method is particularly preferred.

離子銑削法亦稱為離子束蝕刻。在離子銑削法中,將惰性氣體(諸如氬)引入離子源中,以產生離子。所產生之離子經由柵極加速且與樣品基底碰撞以進行蝕刻。離子源之實例包含:卡夫曼(Kauffman)型離子源;高頻離子源;電子轟擊離子源;雙三極體離子源;弗里曼(Freeman)離子源;以及電子迴旋共振(Electron Cyclotron Resonan-ce,ECR)離子源。 Ion milling is also known as ion beam etching. In ion milling, an inert gas such as argon is introduced into the ion source to generate ions. The generated ions are accelerated via the gate and collide with the sample substrate for etching. Examples of ion sources include: Kauffman type ion sources; high frequency ion sources; electron bombardment ion sources; dual triode ion sources; Freeman ion sources; and electron cyclotron resonance (Electron Cyclotron Resonan) -ce, ECR) ion source.

在離子束蝕刻期間,可採用氬氣體作為處理氣體。在RIE期間,可採用氟系列氣體或氯系列氣體作為蝕刻劑。 During the ion beam etching, argon gas can be used as the processing gas. During the RIE, a fluorine series gas or a chlorine series gas may be used as an etchant.

如上所述,本發明之圖案化基底的製造方法是採用本發明之模具執行,所述模具在其凹凸圖案之整個表面上具有高脫模性。因此,有可能在使用奈米壓印之圖案化基底的製造中進行高度精確的處理。 As described above, the method of manufacturing the patterned substrate of the present invention is carried out using the mold of the present invention which has high mold release property over the entire surface of the concave-convex pattern. Therefore, it is possible to perform highly accurate processing in the manufacture of a patterned substrate using nanoimprint.

另外,本發明之圖案化基底的製造方法使用具有藉由上文描述之奈米壓印方法形成之具高成直角性的凹凸圖案之抗蝕劑膜作為遮罩進行乾蝕刻。因此,可在高精度以及高產率下處理基底。 Further, the method for producing a patterned substrate of the present invention is dry-etched using a resist film having a high-contrast concave-convex pattern formed by the nanoimprint method described above as a mask. Therefore, the substrate can be processed with high precision and high yield.

[實例] [Example]

下文將描述本發明之實例以及比較實例。 Examples of the invention and comparative examples will be described below.

<實例1> <Example 1> (模具之製造) (manufacturing of molds)

首先,藉由旋塗法用抗蝕劑液體塗佈Si基底以形成抗蝕劑層,所述抗蝕劑液體具有聚羥基苯乙烯(polyhydroxy styrene,PHS)系列化學增幅型抗蝕劑作為主要組分。此後,將電子束(根據線寬度為30奈米且間距為60奈米之線圖案調節)照射在抗蝕劑層上,同時在XY平台上掃描Si基底,以使抗蝕劑層之整個0.5平方毫米範圍上的直線型凹凸圖案曝光。 First, a Si substrate is coated with a resist liquid by spin coating to form a resist layer having polyhydroxystyrene (polyhydroxy styrene) The styrene, PHS series of chemically amplified resists are the main components. Thereafter, an electron beam (adjusted according to a line pattern having a line width of 30 nm and a pitch of 60 nm) was irradiated onto the resist layer while the Si substrate was scanned on the XY stage so that the entire resist layer was 0.5. A linear concave-convex pattern on the square millimeter range is exposed.

此後,對光阻劑層進行顯影處理,且移除已曝光的部分。最後,藉由RIE,使用已移除曝光的部分之抗蝕劑層作為遮罩進行選擇性蝕刻直至60奈米之深度,以獲得具有直線型凹凸圖案之矽模具。凹凸圖案之錐角是85度。 Thereafter, the photoresist layer is subjected to development processing, and the exposed portion is removed. Finally, by selective etching using a portion of the resist layer from which the exposure was removed as a mask by RIE, a depth of 60 nm was obtained to obtain a ruthenium mold having a linear concave-convex pattern. The taper angle of the concave and convex pattern is 85 degrees.

用UV臭氧處理裝置清潔矽模具主體之表面,以將矽模具主體之表面之性質改變成具有親水性。 The surface of the crucible mold body is cleaned with a UV ozone treatment device to change the properties of the surface of the crucible mold body to be hydrophilic.

(脫模處理基底) (release treatment substrate)

採用0.525毫米厚的Si晶圓作為脫模處理基底。首先,用UV臭氧處理裝置清潔Si晶圓之表面。接著,將由大金工業株式會社(Daikin Industries K.K.)製造之脫模劑奧普托DSX溶解於由大金工業株式會社(Daikin Industries K.K.)製造之氟系列專用溶劑HD-ZV中,以製備含有0.1重量%之奧普托DSX的脫模處理液體。將Si晶圓浸沒於脫模處理液體中1分鐘,隨後以5毫米/秒之恆定速度拔起以在Si晶圓上浸塗脫模劑。脫模劑之膜厚度是5奈米。 A 0.525 mm thick Si wafer was used as the release treatment substrate. First, the surface of the Si wafer was cleaned with a UV ozone treatment device. Next, a release agent, Opto DSX, manufactured by Daikin Industries KK, was dissolved in a fluorine-based special solvent HD-ZV manufactured by Daikin Industries KK to prepare 0.1. The mold release treatment liquid of the weight percent of the Opto DSX. The Si wafer was immersed in the release treatment liquid for 1 minute, and then pulled up at a constant speed of 5 mm/sec to dip the release agent on the Si wafer. The film thickness of the release agent was 5 nm.

(脫模處理方法) (release method)

將矽模具主體以及Si晶圓置放於奈米壓印裝置中。使矽模具主體與Si晶圓在以下條件下彼此接觸:室溫25℃;以及80%相對濕度。維持所述接觸狀態5分鐘,隨後分離 矽模具主體與Si晶圓。藉由上文描述之方法形成脫模層,其厚度分佈為凸處之頂面處之厚度為3奈米,凹處之底面處之厚度為1奈米,以及凸處之側面處之厚度自頂面至底面由3奈米連續變化至1奈米。藉由上述步驟獲得矽模具。 The enamel mold body and the Si wafer were placed in a nanoimprinting apparatus. The crucible mold body and the Si wafer were brought into contact with each other under the following conditions: room temperature 25 ° C; and 80% relative humidity. Maintain the contact state for 5 minutes, then separate 矽 Mold body and Si wafer. The release layer is formed by the method described above, and has a thickness distribution of a thickness of 3 nm at the top surface of the convex portion, a thickness of 1 nm at the bottom surface of the concave portion, and a thickness at the side of the convex portion. The top to bottom surface is continuously changed from 3 nm to 1 nm. The crucible mold is obtained by the above steps.

(奈米壓印基底) (nano imprinted substrate)

採用0.525毫米厚的石英基底作為基底。用相對於抗蝕劑具有優良緊密接觸性質的矽烷偶合劑KBM-5103(由信越化學工業株式會社(Shin-Etsu Chemical Industries,K.K.)製造)處理石英基底之表面。使用PGMEA將KBM-5103稀釋至1質量%,且藉由旋塗法塗佈於基底之表面上。此後,在熱板上在150℃下將塗佈基底退火5分鐘,使矽烷偶合劑結合至基底之表面。 A 0.525 mm thick quartz substrate was used as the substrate. The surface of the quartz substrate was treated with a decane coupling agent KBM-5103 (manufactured by Shin-Etsu Chemical Industries, K.K.) having excellent close contact properties with respect to the resist. KBM-5103 was diluted to 1% by mass using PGMEA and applied to the surface of the substrate by spin coating. Thereafter, the coated substrate was annealed on a hot plate at 150 ° C for 5 minutes to bond the decane coupling agent to the surface of the substrate.

(抗蝕劑) (resist)

製備含有48重量%由化學式1表示之化合物A、48重量%奧尼克斯M220、3重量%豔佳固(IRGACURE)379以及1重量%由化學式2表示之化合物B的抗蝕劑作為抗蝕劑。 A resist containing 48% by weight of Compound A represented by Chemical Formula 1, 48% by weight of Onyx M220, 3% by weight of IRGACURE 379, and 1% by weight of Compound B represented by Chemical Formula 2 was prepared as a resist. .

(抗蝕劑塗佈步驟) (resist coating step)

利用DMP-2831,其是一種由富士膠卷迪馬蒂克斯公司(FUJIFILM Dimatix)製造之壓電型噴墨列印機。利用DMC-11610,一種專用10皮升(pl)頭,作為噴墨頭。提前設定且調節排墨條件以使每液滴中抗蝕劑的量是10皮升。在以此方式調節滴量且進行調節以使殘餘膜厚度將變為10奈米之後,根據預定液滴排列圖案將液滴排列在基底 上。 DMP-2831 is used, which is a piezoelectric inkjet printer manufactured by FUJIFILM Dimatix. A DMC-11610, a dedicated 10 picoliter (pl) head, is used as the ink jet head. The ink discharge conditions were set in advance and adjusted so that the amount of the resist per droplet was 10 picoliters. After adjusting the amount of droplets in this manner and adjusting so that the residual film thickness will become 10 nm, the droplets are arranged on the substrate according to a predetermined droplet arrangement pattern. on.

(壓印步驟) (imprint step)

使矽模具與石英基底彼此接近以使兩者間之空隙為0.1毫米或更小,且自石英基底之背面進行定位以使石英基底上對準標記之位置匹配矽模具上之對準標記之位置。用含99體積%或更高之氦氣的氣體填充矽模具與石英基底之間的間隙。隨後,減壓至20千帕或更低。在經減壓之氦氣條件下使模具接觸抗蝕劑液滴。接觸後,施加1兆帕之壓力持續一分鐘,且照射劑量為300毫焦耳/平方公分之包含360奈米波長之紫外光以固化抗蝕劑。此後,藉由抽吸(suction)固持石英基底之背面以及矽模具。隨後,將石英基底或矽模具在與按壓方向相反之方向上相對移動來分離矽模具。 The tantalum mold and the quartz substrate are brought close to each other such that the gap therebetween is 0.1 mm or less, and the back surface of the quartz substrate is positioned such that the position of the alignment mark on the quartz substrate matches the position of the alignment mark on the mold. . The gap between the crucible mold and the quartz substrate was filled with a gas containing 99% by volume or more of helium gas. Subsequently, the pressure is reduced to 20 kPa or less. The mold was brought into contact with the resist droplets under reduced pressure helium. After the contact, a pressure of 1 MPa was applied for one minute, and an irradiation dose of 300 mJ/cm 2 of ultraviolet light having a wavelength of 360 nm was applied to cure the resist. Thereafter, the back surface of the quartz substrate and the crucible mold were held by suction. Subsequently, the quartz substrate or the crucible mold is relatively moved in a direction opposite to the pressing direction to separate the crucible mold.

(矽模具複製製造步驟) (矽 mold copy manufacturing steps)

如下文描述使用已轉移有凹凸圖案之抗蝕劑膜作為遮罩來進行乾蝕刻。由此,在石英基底上形成基於抗蝕劑膜之凹凸圖案的凸處以及凹處之形狀。首先,藉由氧電漿蝕刻(oxygen plasma etching)移除圖案之凹處存在之殘餘膜以使圖案之凹處的石英基底曝露。此時,設定條件以使蝕刻的量能夠移除凹凸圖案區域內之最厚殘餘膜。接著,使用圖案之凸處作為遮罩對石英基底施行使用氟系列氣體的RIE。設定RIE條件以使蝕刻深度為60奈米。最後,藉由氧電漿蝕刻移除圖案之凸處之殘餘物。因此,獲得具有預定凹凸圖案之複製模具。 Dry etching is performed using a resist film to which a concavo-convex pattern has been transferred as a mask as described below. Thereby, the convex portion and the concave shape based on the concave-convex pattern of the resist film are formed on the quartz substrate. First, the residual film present in the recess of the pattern is removed by oxygen plasma etching to expose the quartz substrate in the recess of the pattern. At this time, conditions are set such that the amount of etching can remove the thickest residual film in the concave-convex pattern region. Next, RIE using a fluorine-based gas was applied to the quartz substrate using the convex portion of the pattern as a mask. The RIE conditions were set so that the etching depth was 60 nm. Finally, the residue of the relief of the pattern is removed by oxygen plasma etching. Therefore, a replica mold having a predetermined concave-convex pattern is obtained.

藉由上述複製製造步驟製造石英模具,其為矽模具的複製品。 A quartz mold, which is a replica of the tantalum mold, is produced by the above-described replication manufacturing step.

<實例2> <Example 2>

執行與實例1中所進行之步驟相同的步驟,但應用如下文描述之化學氣相沈積法執行脫模處理。 The same steps as those performed in Example 1 were carried out, but the release treatment was carried out using a chemical vapor deposition method as described below.

藉由將內部具有模具之容器的內部減壓至10千帕或更低,加熱脫模劑使之汽化,將包含脫模劑之氣體引入容器中同時控制其流量並且使模具表面暴露於包含呈氣態之脫模劑的氛圍中來執行應用化學氣相沈積法之脫模處理。藉由上文描述之方法在模具主體之表面上形成脫模層,其厚度分佈為凸處之頂面處之厚度為3奈米,凹處之底面處之厚度為1奈米,以及凸處之側面處之厚度自頂面至底面由3奈米連續變化至1奈米。 The mold release agent is heated to be vaporized by decompressing the inside of the container having the mold inside to 10 kPa or less, and the gas containing the release agent is introduced into the container while controlling the flow rate and exposing the mold surface to the inclusion. The release treatment of the chemical vapor deposition method is performed in the atmosphere of the gaseous release agent. Forming a release layer on the surface of the mold body by the method described above, the thickness distribution of which is 3 nm at the top surface of the convex portion, the thickness at the bottom surface of the concave portion is 1 nm, and the convex portion The thickness at the side of the surface varies continuously from 3 nm to 1 nm from the top surface to the bottom surface.

<實例3> <Example 3>

執行與實例1中所進行之步驟相同的步驟,但將電子束(根據線寬度為30奈米且間距為60奈米之線圖案以及線寬度為300奈米且間距為600奈米之線圖案調節)照射在抗蝕劑層上,同時在XY平台上掃描Si基底,以使抗蝕劑層之5平方毫米範圍內凹處具有不同寬度之直線型凹凸圖案曝光。 Perform the same steps as those performed in Example 1, but with an electron beam (line pattern according to a line width of 30 nm and a pitch of 60 nm and a line pattern with a line width of 300 nm and a pitch of 600 nm) The light is irradiated on the resist layer while the Si substrate is scanned on the XY stage to expose the linear concave-convex pattern having different widths in the recesses of the resist layer in the range of 5 mm 2 .

<比較實例1> <Comparative Example 1>

製造僅凸處上具有脫模層之模具。除脫模處理步驟以外,其他步驟與實例1中所執行的步驟相同。 A mold having a release layer only on the convex portion is produced. The other steps were the same as those performed in Example 1, except for the demolding step.

(脫模處理方法) (release method)

將矽模具主體以及脫模處理基底置放於奈米壓印裝置中。使矽模具主體與脫模處理基底在以下條件下彼此接觸:室溫25℃;以及20%相對濕度。維持所述接觸狀態1分鐘,隨後分離矽模具主體與脫模基底。藉由低濕度以及短接觸時間來抑制脫模劑經彎液面擴散。藉由上文描述之方法在矽模具主體之表面上形成脫模層,其厚度分佈為凸處之頂面處之厚度為3奈米,凹處之底面處之厚度為0奈米,以及凸處之側面處之厚度小於3奈米。 The crucible mold body and the release treatment substrate are placed in a nanoimprinting apparatus. The crucible mold body and the release-treated substrate were brought into contact with each other under the following conditions: room temperature 25 ° C; and 20% relative humidity. The contact state was maintained for 1 minute, and then the crucible mold body and the release substrate were separated. The release of the release agent through the meniscus is suppressed by low humidity and short contact time. A release layer is formed on the surface of the crucible mold body by the method described above, and the thickness distribution is such that the thickness at the top surface of the convex portion is 3 nm, the thickness at the bottom surface of the concave portion is 0 nm, and convex The thickness at the side of the place is less than 3 nm.

<比較實例2> <Comparative Example 2>

執行與實例1中所進行之步驟相同的步驟,但應用如下文描述之浸塗法施行脫模處理。 The same steps as those performed in Example 1 were carried out, but the demolding treatment was carried out using a dip coating method as described below.

藉由將矽模具主體浸沒於溶液中來進行應用浸塗法之脫模處理,其中將脫模劑溶解持續1小時,濃度為0.1重量%。藉由上文描述之方法在矽模具主體之表面上形成脫模層,其厚度分佈為凸處之頂面處之厚度為1奈米,凹處之底面處之厚度為1奈米,以及凸處之側面處之厚度是均一的。 The release treatment by the dip coating method was carried out by immersing the ruthenium mold main body in a solution in which the release agent was dissolved for 1 hour at a concentration of 0.1% by weight. Forming a release layer on the surface of the crucible mold body by the method described above, the thickness distribution of which is 1 nm at the top surface of the convex portion, 1 nm at the bottom surface of the concave portion, and convexity The thickness at the side of the section is uniform.

<比較實例3> <Comparative Example 3>

執行與實例2中所進行之步驟相同的步驟,但將電子束(根據線寬度為30奈米且間距為60奈米之線圖案以及線寬度為300奈米且間距為600奈米之線圖案調節)照射在抗蝕劑層上,同時在XY平台上掃描Si基底,以使抗蝕劑層之5平方毫米範圍內凹處具有不同寬度之直線型凹凸圖案曝光。注意,調節脫模層以在具有線寬度為30奈米且 間距為60奈米之線圖案的區域內具有所希望的厚度。亦即,在線寬度為30奈米且間距為60奈米之線圖案之區域內形成形成脫模層以使其厚度分佈為凸處之頂面處之厚度為3奈米,凹處之底面處之厚度為1奈米,以及凸處之側面處之厚度自頂面至底面由3奈米連續變化至1奈米。因此,在線寬度為300奈米且間距為600奈米之線圖案區域內的脫模層變得無厚度分佈,其中凸處之頂面處之厚度是2奈米,凹處之底面處之厚度是2奈米,以及凸處之側面處之厚度為約2奈米。 Perform the same steps as those performed in Example 2, but with an electron beam (line pattern according to a line width of 30 nm and a pitch of 60 nm and a line pattern with a line width of 300 nm and a pitch of 600 nm) The light is irradiated on the resist layer while the Si substrate is scanned on the XY stage to expose the linear concave-convex pattern having different widths in the recesses of the resist layer in the range of 5 mm 2 . Note that the release layer is adjusted to have a line width of 30 nm and The desired thickness is in the region of the line pattern having a pitch of 60 nm. That is, a portion of the line pattern having a line width of 30 nm and a pitch of 60 nm is formed to form a release layer such that the thickness of the top surface of the protrusion is 3 nm, and the bottom surface of the recess is The thickness is 1 nm, and the thickness at the side of the convex portion continuously changes from 3 nm to 1 nm from the top surface to the bottom surface. Therefore, the release layer in the line pattern region having a line width of 300 nm and a pitch of 600 nm becomes no thickness distribution, wherein the thickness at the top surface of the protrusion is 2 nm, and the thickness at the bottom surface of the recess is It is 2 nm, and the thickness at the side of the protrusion is about 2 nm.

<評估方法> <Evaluation method>

在下文中將描述關於抗蝕劑圖案之圖案可成形性、模具耐久性、反覆脫模處理時增加的缺陷之數目、以及奈米壓印操作之生產力的具體評估方法以及評估結果。 Specific evaluation methods regarding the pattern formability of the resist pattern, the durability of the mold, the number of defects increased at the time of the reverse mold release treatment, and the productivity of the nanoimprint operation, and the evaluation results will be described hereinafter.

藉由在垂直方向上切割藉由奈米壓印操作形成之抗蝕劑圖案以及藉由利用AFM及/或掃描電子顯微鏡量測其截面形狀來對抗蝕劑圖案之圖案可成形性進行評估。使用線寬度為30奈米且間距為60奈米之凹凸圖案區域內之凸處的傾斜角作為指數來進行量測。另外,僅關於實例3以及比較實例3,利用具有不同線寬度以及間距之圖案區域內深度平均值之差值進行深度均一性之評估。實例以及比較實例之傾斜角以及差值如表1中所示。 The pattern formability of the resist pattern was evaluated by cutting the resist pattern formed by the nanoimprint operation in the vertical direction and measuring the cross-sectional shape thereof by AFM and/or scanning electron microscopy. The inclination angle of the convex portion in the concave-convex pattern region having a line width of 30 nm and a pitch of 60 nm was used as an index. In addition, with respect to Example 3 and Comparative Example 3 only, the evaluation of the depth uniformity was performed using the difference of the depth average values in the pattern regions having different line widths and pitches. The tilt angles and differences of the examples and comparative examples are shown in Table 1.

藉由在進行100次奈米壓印操作之後用光學顯微鏡、掃描電子顯微鏡以及原子力顯微鏡觀察模具表面來對模具耐久性進行評估。採用黏附於表面之外物(foreign object)之數目作為耐久性指數。當比較評估結果時,在黏附於實例1之模具的外物之數目指定為100的情況下,計算實例以及比較實例之外物之數目的相對值。各實例以及比較實例的黏附之外物之數目如表2中所示。 The durability of the mold was evaluated by observing the surface of the mold with an optical microscope, a scanning electron microscope, and an atomic force microscope after performing 100 nanoimprint operations. The number of foreign objects adhered to the surface is used as the durability index. When the evaluation results were compared, in the case where the number of foreign objects adhered to the mold of Example 1 was designated as 100, the relative values of the numbers of the examples and the comparative examples were calculated. The number of adhesions of the respective examples and comparative examples is shown in Table 2.

藉由在進行100次奈米壓印操作之後再次施行脫模處理且在脫模處理之前以及之後用光學顯微鏡、掃描電子顯微鏡以及原子力顯微鏡觀察模具之表面來對反覆脫模處理時增加的缺陷數目進行評估。採用黏附於表面之外物之數目的增加(缺陷數目的增加)作為評估指數。當比較評估結果時,在實例1之模具中缺陷數目之增加定為100的情況下,計算實例以及比較實例之缺陷數自之增加的相對值。各實例以及比較實例的缺陷數目之增加如表3中所示。 The number of defects added to the reverse mold release treatment by performing the mold release treatment again after performing 100 nanoimprint operations and observing the surface of the mold with an optical microscope, a scanning electron microscope, and an atomic force microscope before and after the mold release treatment to evaluate. The increase in the number of substances adhered to the surface (the increase in the number of defects) was used as the evaluation index. When the evaluation results were compared, in the case where the increase in the number of defects in the mold of Example 1 was set to 100, the relative values from which the number of defects of the example and the comparative example were increased were calculated. The increase in the number of defects of each of the examples and the comparative examples is shown in Table 3.

採用脫模處理(包含將模具自脫模處理裝置運送至奈米壓印裝置且置放模具)所需之總時間量作為指數來對奈米壓印操作之生產力進行評估。當比較評估結果時,在實例1之模具的總時間指定為100的情況下,計算實例以及比較實例之總時間的相對值。各實例以及比較實例的總時間如表4中所示。 The productivity of the nanoimprint operation was evaluated using the total amount of time required for the release treatment (including transporting the mold from the release treatment device to the nanoimprinting device and placing the mold) as an index. When the evaluation results were compared, in the case where the total time of the mold of Example 1 was designated as 100, the relative values of the total time of the example and the comparative example were calculated. The total time of each example and comparative examples is as shown in Table 4.

<評估結果> <evaluation result>

將論述與實例2相關之評估結果。在應用化學氣相沈積法之脫模處理中,必須利用不同於奈米壓印裝置之專用氣相沈積裝置。因此,與實例1相比其生產力略差,但生產力之降低在可接受範圍內。抗蝕劑圖案之圖案可成形性與實例1相當,因為可控制脫模層之厚度以使凹處之底面處的厚度可控制。模具之耐久性以及反覆脫模處理時增加之缺陷的數目與實例1相當。 The evaluation results related to Example 2 will be discussed. In the mold release treatment using the chemical vapor deposition method, it is necessary to use a dedicated vapor deposition apparatus different from the nano imprint apparatus. Therefore, its productivity is slightly worse than that of Example 1, but the decrease in productivity is within an acceptable range. The pattern formability of the resist pattern is comparable to that of Example 1, because the thickness of the release layer can be controlled so that the thickness at the bottom surface of the recess can be controlled. The durability of the mold and the number of defects added during the repeated demolding treatment were comparable to those of Example 1.

將論述與實例3相關之評估結果。凹處之深度略有波 動,因為矽模具上之圖案具有寬度不同之凹處,因此圖案可成形性略有劣化。然而,圖案可成形性之劣化在可接受範圍內。模具之耐久性、反覆脫模處理時增加之缺陷的數目以及奈米壓印之生產力與實例1相當。 The evaluation results related to Example 3 will be discussed. The depth of the recess is slightly waved The pattern formability is slightly deteriorated because the pattern on the enamel mold has recesses having different widths. However, the deterioration of pattern formability is within an acceptable range. The durability of the mold, the number of defects added during the repeated demolding treatment, and the productivity of the nanoimprint were comparable to those of Example 1.

將論述與比較實例1相關之評估結果。圖案可成形性與實例1相比較差,因為脫模劑僅存在於凸處之頂面上。另外,由堵塞所致之壓印缺陷之數目、抗蝕劑圖案中之缺陷、剝落等多於實例1,因為凹處之底面上不存在脫模劑。反覆脫模處理時缺陷數目之增加與實例1相當,且奈米壓印之生產力大於實例1。 The evaluation results related to Comparative Example 1 will be discussed. The pattern formability was inferior to that of Example 1, because the release agent was present only on the top surface of the convex portion. Further, the number of embossing defects caused by clogging, defects in the resist pattern, peeling, and the like were more than that of Example 1, because the mold release agent was not present on the bottom surface of the recess. The increase in the number of defects during the reverse mold release treatment was comparable to that of Example 1, and the productivity of the nanoimprint was greater than that of Example 1.

將論述與比較實例2相關之評估結果。圖案可成形性與實例1相比較差,因為應用浸塗法之脫模處理用脫模劑均一地塗佈整個凹凸圖案。另外,反覆脫模處理時缺陷數目之增加多於實例1,因為在奈米壓印裝置內或在運送期間黏附於模具之背面以及側面的外物在浸沒期間黏附於所述表面。另外,奈米壓印之生產力與實例1相比較差,因為在奈米壓印裝置外部必須利用專用浸漬裝置。模具之耐久性與實例1相當。 The evaluation results related to Comparative Example 2 will be discussed. The pattern formability was inferior to that of Example 1, because the release treatment using the dip coating method uniformly applied the entire uneven pattern with the release agent. In addition, the number of defects at the time of the reverse mold release treatment was increased more than that of Example 1, because the foreign matter adhered to the back side and the side surface of the mold in the nanoimprinting apparatus or during transportation adhered to the surface during immersion. In addition, the productivity of nanoimprinting is inferior to that of Example 1, because a dedicated impregnation apparatus must be utilized outside of the nanoimprinting apparatus. The durability of the mold was comparable to that of Example 1.

將論述與比較實例3相關之評估結果。在應用化學氣相沈積法之脫模處理中,若矽模具主體上存在具有寬度不同之凹處的圖案,則在寬度較大之凹處,脫模層在凹處之底面處之厚度將較大。因此,圖案深度之均一性劣化,且圖案可成形性與實例3相比較差。當凹處之線寬度較大及/或縱橫比較小時(以約100奈米之線寬度以及1之縱橫比 為邊界),很難在側面上賦予脫模層某種厚度分佈。另外,在應用化學氣相沈積法之脫模處理中,在奈米壓印裝置外部必須利用專用氣相沈積裝置。因此,奈米壓印之生產力與實例1相比略差。然而,奈米壓印之生產力的降低在可容許範圍內。模具之耐久性以及反覆脫模處理時增加之缺陷的數目與實例1相當。 The evaluation results related to Comparative Example 3 will be discussed. In the demolding process using the chemical vapor deposition method, if there is a pattern having a recess having a different width on the main body of the crucible, the thickness of the release layer at the bottom of the recess will be greater in the recess having a larger width. Big. Therefore, the uniformity of the pattern depth is deteriorated, and the pattern formability is inferior to that of Example 3. When the width of the line of the recess is large and/or the aspect is relatively small (with a line width of about 100 nm and an aspect ratio of 1) For the boundary), it is difficult to impart a certain thickness distribution to the release layer on the side. In addition, in the mold release treatment using the chemical vapor deposition method, a dedicated vapor deposition apparatus must be utilized outside the nanoimprint apparatus. Therefore, the productivity of nanoimprinting is slightly worse than that of Example 1. However, the reduction in productivity of nanoimprinting is within an acceptable range. The durability of the mold and the number of defects added during the repeated demolding treatment were comparable to those of Example 1.

表5概括與實例以及比較實例相關的評估結果。 Table 5 summarizes the evaluation results associated with the examples and comparative examples.

表5之說明如下。 The description of Table 5 is as follows.

在與抗蝕劑圖案之可成形性相關之列中,凸處之傾斜角大於85度(這是在製造矽模具主體時的錐角)的情況被評估為「良好」,且所述角為85度或更低的情況被評估為「差」。然而,若在深度均一性評估中深度之平均值的差為1奈米或更大,則即使凸處之傾斜角大於85度,抗蝕劑圖案之可成形性亦被評估為「差」。 In the column relating to the formability of the resist pattern, the case where the inclination angle of the convex portion is more than 85 degrees (this is the taper angle at the time of manufacturing the mold main body) is evaluated as "good", and the angle is A situation of 85 degrees or lower was evaluated as "poor". However, if the difference in the average value of the depth in the depth uniformity evaluation is 1 nm or more, the formability of the resist pattern is evaluated as "poor" even if the inclination angle of the convex portion is more than 85 degrees.

在與模具之耐久性相關之列中,外物之數目少於150的情況被評估為「良好」,且數目為150或更多的情況被評 估為「差」。 In the column related to the durability of the mold, the case where the number of foreign objects is less than 150 is evaluated as "good", and the number of cases of 150 or more is evaluated. Estimated as "poor".

在與反覆脫模處理時缺陷數目之增加相關之列中,缺陷數目之增加為150或更少的情況被判斷為缺陷數目增加幅度小,且被評估為「良好」,而缺陷數目之增加多於150的情況被評估為「差」。 In the column relating to an increase in the number of defects at the time of the reverse mold release treatment, the case where the increase in the number of defects is 150 or less is judged as the small increase in the number of defects, and is evaluated as "good", and the number of defects is increased more. The situation at 150 was evaluated as "poor".

在與奈米壓印之生產力相關之列中,總時間為150或更少的情況被評估為「良好」,且總時間多於150的情況被評估為「差」。 Among the items related to the productivity of nanoimprinting, the case where the total time is 150 or less is evaluated as "good", and the case where the total time is more than 150 is evaluated as "poor".

如由表5可瞭解,本發明之模具,亦即實例1至實例3之模具,在抗蝕劑圖案之可成形性、模具之耐久性、反覆脫模處理時缺陷數目之增加以及奈米壓印之生產力方面展現優越的效能。由與比較實例3相關的結果可瞭解,即使應用化學氣相沈積法(在實例2中產生有利的結果),在模具包含不同線寬度以及間距之圖案時,在抗蝕劑圖案之可成形性、特定言之深度均一性方面亦出現問題。如由與實例3相關的評估結果所表明,深度之均一性得到改進,且所有評估項目均展現優越的效能。與實例1至實例3相比,在所有評估項目方面,比較實例1至比較實例3中沒有一個是相當的或更高。上述結果證實了本發明之優越性。 As can be understood from Table 5, the mold of the present invention, that is, the molds of Examples 1 to 3, the formability of the resist pattern, the durability of the mold, the increase in the number of defects during the reverse mold release treatment, and the nano pressure. Printed productivity shows superior performance. From the results associated with Comparative Example 3, it can be understood that even if chemical vapor deposition is applied (promising results are produced in Example 2), formability in the resist pattern when the mold contains patterns of different line widths and pitches There are also problems with the depth uniformity of specific words. As indicated by the results of the evaluation associated with Example 3, the uniformity of depth is improved and all evaluation items exhibit superior performance. Compared with Example 1 to Example 3, none of Comparative Example 1 to Comparative Example 3 was comparable or higher in terms of all evaluation items. The above results confirm the superiority of the present invention.

1‧‧‧模具 1‧‧‧Mold

2‧‧‧吸附水 2‧‧‧Adsorption water

5‧‧‧脫模處理基底 5‧‧‧Release treatment substrate

6‧‧‧脫模劑 6‧‧‧Release

6a‧‧‧脫模劑 6a‧‧‧Release

12‧‧‧模具主體 12‧‧‧Mold main body

13‧‧‧凹凸圖案 13‧‧‧ concave pattern

14‧‧‧脫模層 14‧‧‧ release layer

H‧‧‧凸處距凹處之底部的高度/凹處之深度 H‧‧‧The height of the protrusion from the bottom of the recess/depth of the recess

Sb‧‧‧底面 Sb‧‧‧ bottom

Ss‧‧‧側面 Ss‧‧‧ side

St‧‧‧頂面 St‧‧‧ top

W1‧‧‧凸處之寬度 W1‧‧‧Width of the convexity

W2‧‧‧凸處間之距離 Distance between W2‧‧‧ convex

圖1是說明模具結構的示意性剖視圖。 Fig. 1 is a schematic cross-sectional view illustrating a structure of a mold.

圖2是說明所述模具之製造方法的一個步驟的示意性剖視圖。 Fig. 2 is a schematic cross-sectional view illustrating one step of a method of manufacturing the mold.

圖3是說明所述模具之製造方法的一個步驟的示意性 剖視圖。 Figure 3 is a schematic illustration of one step of the method of manufacturing the mold Cutaway view.

圖4是說明所述模具之製造方法的一個步驟的示意性剖視圖。 Fig. 4 is a schematic cross-sectional view illustrating one step of a method of manufacturing the mold.

圖5是說明所述模具之製造方法的一個步驟的示意性剖視圖。 Fig. 5 is a schematic cross-sectional view illustrating one step of a method of manufacturing the mold.

圖6是說明所述模具之製造方法的一個步驟的示意性剖視圖。 Fig. 6 is a schematic cross-sectional view illustrating one step of a method of manufacturing the mold.

2‧‧‧吸附水 2‧‧‧Adsorption water

5‧‧‧脫模處理基底 5‧‧‧Release treatment substrate

6‧‧‧脫模劑 6‧‧‧Release

6a‧‧‧脫模劑 6a‧‧‧Release

12‧‧‧模具主體 12‧‧‧Mold main body

Claims (11)

一種脫模處理方法,適於在表面上具有精細凹凸圖案之模具主體之所述表面上形成脫模層,所述方法特徵在於包括:製備塗佈有脫模劑之脫模處理基底;使所述表面上具有吸附水之所述模具主體與所述脫模處理基底彼此靠近直至接觸狀態,其中所述凹凸圖案之凸處的上部與所述脫模劑接觸;維持所述接觸狀態直至形成所述脫模層,使得所述脫模層之厚度分佈為所述脫模層在所述凹凸圖案之側面處之厚度因所述脫模劑擴散至所述吸附水中而自所述凸處之頂面朝向凹處之底面變薄;以及使所述模具主體與所述脫模處理基底彼此分離,使得所述凸處之所述上部與所述脫模處理基底上之所述脫模劑分離。 A mold release treatment method, which is suitable for forming a release layer on the surface of a mold body having a fine concave and convex pattern on a surface, the method comprising: preparing a release treatment substrate coated with a release agent; The mold body having adsorbed water on the surface and the mold release substrate are brought close to each other until a contact state, wherein an upper portion of the convex portion of the concave-convex pattern is in contact with the release agent; and the contact state is maintained until the formation The release layer is such that the thickness distribution of the release layer is such that the thickness of the release layer at the side of the relief pattern is from the top of the protrusion due to diffusion of the release agent into the adsorption water The surface is thinned toward the bottom surface of the recess; and the mold body and the mold release substrate are separated from each other such that the upper portion of the protrusion is separated from the release agent on the release treatment substrate. 如申請專利範圍第1項所述之脫模處理方法,其特徵在於:所述脫模處理方法是在奈米壓印裝置內部執行。 The mold release treatment method according to claim 1, wherein the mold release treatment method is performed inside a nanoimprinting apparatus. 一種奈米壓印模具的製造方法,所述奈米壓印模具具有在表面上具有精細凹凸圖案之模具主體以及在所述模具主體之所述表面上之脫模層,所述方法特徵在於包括:製備塗佈有脫模劑之脫模處理基底;使在所述表面上具有吸附水之所述模具主體與所述脫模處理基底彼此靠近直至接觸狀態,其中所述凹凸圖案之 凸處之上部與所述脫模劑接觸;維持所述接觸狀態直至形成所述脫模層,使得所述脫模層之厚度分佈為所述脫模層在所述凹凸圖案之側面處之厚度因所述脫模劑擴散至所述吸附水中而自所述凸處之頂面朝向凹處之底面變薄;以及使所述模具主體與所述脫模處理基底彼此分離,使得所述凸處之所述上部與所述脫模處理基底上之所述脫模劑分離。 A method of manufacturing a nanoimprinting mold having a mold body having a fine concavo-convex pattern on a surface and a release layer on the surface of the mold main body, the method characterized by including Preparing a release-treated substrate coated with a release agent; bringing the mold body having adsorbed water on the surface and the release-treated substrate close to each other until a contact state, wherein the concave-convex pattern The upper portion of the convex portion is in contact with the release agent; maintaining the contact state until the release layer is formed such that the thickness distribution of the release layer is the thickness of the release layer at the side of the concave-convex pattern Thinning from a top surface of the convex portion toward a bottom surface of the concave portion due to diffusion of the release agent into the adsorbed water; and separating the mold main body and the mold release treatment substrate from each other such that the convex portion The upper portion is separated from the release agent on the release treated substrate. 如申請專利範圍第3項所述之奈米壓印模具的製造方法,其特徵在於:所述奈米壓印模具的製造方法是在奈米壓印裝置內部執行。 The method for producing a nanoimprinting mold according to the third aspect of the invention, wherein the method for producing the nanoimprinting mold is performed inside a nanoimprinting apparatus. 一種奈米壓印模具,其包括:在表面上具有精細凹凸圖案之模具主體;以及在所述模具主體之所述表面上之脫模層;其特徵在於:所述脫模層之厚度分佈為所述脫模層在所述凹凸圖案之側面處之厚度自凸處之頂面朝向凹處之底面變薄。 A nano imprinting mold comprising: a mold main body having a fine concavo-convex pattern on a surface; and a release layer on the surface of the mold main body; wherein a thickness distribution of the release layer is The thickness of the release layer at the side of the concave-convex pattern is thinned from the top surface of the convex portion toward the bottom surface of the concave portion. 如申請專利範圍第5項所述之奈米壓印模具,其特徵在於:所述脫模層之所述厚度分佈為所述側面處之厚度自與所述頂面處之厚度一樣厚之厚度減至與所述底面處之厚度一樣厚之厚度。 The nanoimprinting mold according to claim 5, wherein the thickness distribution of the release layer is such that the thickness at the side surface is as thick as the thickness at the top surface. Reduced to a thickness as thick as the thickness at the bottom surface. 如申請專利範圍第5項或第6項所述之奈米壓印模具,其特徵在於: 所述脫模層之所述厚度分佈為所述頂面處之厚度在1奈米至5奈米之範圍內,並且所述底面處之厚度在0.1奈米至1奈米之範圍內且為所述頂面處之厚度的70%或更小。 The nano imprinting mold according to claim 5 or 6, wherein: The thickness distribution of the release layer is such that the thickness at the top surface is in the range of 1 nm to 5 nm, and the thickness at the bottom surface is in the range of 0.1 nm to 1 nm and is The thickness at the top surface is 70% or less. 一種奈米壓印方法,其特徵在於包括:採用如申請專利範圍第5項所述之模具;用抗蝕劑塗佈奈米壓印基底;將所述模具壓在所述奈米壓印基底之塗佈有所述抗蝕劑的表面上;以及使所述模具與所述奈米壓印基底分離。 A nanoimprinting method, comprising: using a mold as described in claim 5; coating a nanoimprint substrate with a resist; pressing the mold on the nanoimprint substrate Coating the surface of the resist; and separating the mold from the nanoimprint substrate. 如申請專利範圍第8項所述之奈米壓印方法,其特徵在於,在歷經預定次數之按壓步驟之後或根據所述脫模層之磨損程度,對所述模具施行脫模處理,所述脫模處理包括:製備塗佈有脫模劑之脫模處理基底;使在表面上具有吸附水之所述模具主體與所述脫模處理基底彼此靠近直至接觸狀態,其中所述凹凸圖案之凸處之上部與所述脫模劑接觸;維持所述接觸狀態直至形成所述脫模層,使得所述脫模層之厚度分佈為所述脫模層在所述凹凸圖案之側面處之厚度因所述脫模劑擴散至所述吸附水中而自所述凸處之頂面朝向凹處之底面變薄;以及使所述模具主體與所述脫模處理基底彼此分離,使得所述凸處之所述上部與所述脫模處理基底上之所述脫模劑分離。 The nanoimprint method according to claim 8, wherein the mold is subjected to a mold release treatment after a predetermined number of pressing steps or according to a degree of wear of the release layer, The demolding treatment includes: preparing a release-treated substrate coated with a release agent; and bringing the mold main body having adsorbed water on the surface and the release-treated substrate to each other until a contact state, wherein the concave-convex pattern is convex The upper portion is in contact with the release agent; maintaining the contact state until the release layer is formed such that the thickness distribution of the release layer is the thickness of the release layer at the side of the concave-convex pattern Dissolving the release agent into the adsorbed water and thinning from a top surface of the convex portion toward a bottom surface of the concave portion; and separating the mold main body and the mold release treatment substrate from each other such that the convex portion The upper portion is separated from the release agent on the release treated substrate. 如申請專利範圍第9項所述之奈米壓印方法,其特徵在於:將所述模具壓抵於所述奈米壓印基底之步驟與施行所述脫模處理之步驟兩者均在奈米壓印裝置內部執行。 The nanoimprint method according to claim 9, wherein the step of pressing the mold against the nanoimprint substrate and the step of performing the mold release treatment are both The meter imprinting device is executed inside. 一種圖案化基底的製造方法,其特徵在於包括:藉由如申請專利範圍第8項所述之奈米壓印方法在欲處理之基底上形成已轉移有凹凸圖案的抗蝕劑膜;以及使用所述抗蝕劑膜作為遮罩來進行蝕刻,形成對應於轉移至所述抗蝕劑膜上之所述凹凸圖案的凹凸圖案。 A method of manufacturing a patterned substrate, comprising: forming a resist film having a textured pattern on a substrate to be processed by a nanoimprint method as described in claim 8; and using The resist film is etched as a mask to form a concavo-convex pattern corresponding to the concavo-convex pattern transferred onto the resist film.
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