TW201310021A - Interference imaging apparatus and system thereof - Google Patents
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本發明有關於一種成像技術,且特別是一種干涉成像裝置及其系統。The present invention relates to an imaging technique, and more particularly to an interference imaging apparatus and system thereof.
干涉成像技術具有非侵入性、非破壞性與高解析度之成像技術,因此,已被廣泛地應用在半導體工業與電子醫療等領域。Interferometric imaging technology has non-invasive, non-destructive and high-resolution imaging technologies, and has been widely used in the semiconductor industry and electronic medical fields.
一般而言,傳統的X光(X-ray)成像技術可根據穿透性的差異來成像。舉例來說,當物質的密度不同時,物質對X光吸收係數也會不同,使得X光的穿透量有差異。換言之,密度較高的物質吸收較多的X光,使得X光片呈現白色;反之,密度低的物質吸收較少的X光,使得X光片呈現黑色。因此,可藉由黑白對比來區分出高密度的硬物質。In general, conventional X-ray imaging techniques can be imaged based on differences in penetration. For example, when the density of matter is different, the X-ray absorption coefficient of the substance will be different, so that the amount of X-ray penetration is different. In other words, the higher density material absorbs more X-rays, making the X-ray film appear white; conversely, the low-density material absorbs less X-rays, making the X-ray film appear black. Therefore, high-density hard substances can be distinguished by black-and-white contrast.
目前的X光成像技術更可以根據光線折射率的不同,來分析物質之更微小的差異,因此,可區分出體積小或密度低的物質。根據上述,無論是傳統或目前的X光成像技術皆可產生黑白對比的二維影像。然而,傳統或目前的X光成像技術的縱向解析度皆不足,而可能無法對待測物的深度結構進行有效的分析。The current X-ray imaging technology can analyze the smaller difference of the material according to the difference of the refractive index of the light, so that a small volume or a low density substance can be distinguished. According to the above, both conventional and current X-ray imaging techniques can produce two-dimensional images in black and white contrast. However, conventional or current X-ray imaging techniques have insufficient longitudinal resolution, and may not be able to effectively analyze the depth structure of the object to be measured.
近年來,同調性斷層攝影術(Optical Coherence Tomography,OCT)的發展已經提升了干涉成像技術的解析度,且更進一步地發展出三維影像。同調性斷層攝影術使用低同調性射源(low coherence emission source)或超短脈衝雷射(ultrashort laser pulses)射源等,對待測物進行斷層掃描以產生三維影像(即包括待測物的深度結構資訊)。In recent years, the development of Optical Coherence Tomography (OCT) has improved the resolution of interference imaging technology and further developed 3D images. Coherent tomography uses a low coherence emission source or an ultrashort laser pulse source to perform a tomographic scan of the object to be measured to produce a three-dimensional image (ie, including the depth of the object to be tested). Structural information).
進一步地說明,同調性斷層攝影術可根據寬頻射源之時間同調的特性,以產生極短的干涉條紋之長度。當寬頻射源的頻譜越寬,則所產生的干涉條紋之長度越短,此時輸出影像的解析度越高。所述之解析度的方程式為l c =0.441X(/Δλ),其中l c 為射源的同調長度(即縱向解析度),λ 0為中心波長,Δλ為頻譜寬度。Further, tonal tomography can be based on the time-coherent characteristics of a broadband source to produce a very short length of interference fringes. The wider the spectrum of the broadband source, the shorter the length of the resulting interference fringes, and the higher the resolution of the output image at this time. The equation for the resolution is l c =0.441X ( /Δ λ ), where l c is the coherence length of the source (ie, the longitudinal resolution), λ 0 is the center wavelength, and Δ λ is the spectrum width.
目前,在半導體工業生產晶片的過程,使晶片微小化不但可以節省晶片在使用時所占據的空間,並且可增加單片晶圓中所生產的晶片總數量,故製程方法已發展至奈米等級(nanometer-order)。At present, in the process of producing wafers in the semiconductor industry, the miniaturization of the wafer not only saves the space occupied by the wafer during use, but also increases the total number of wafers produced in a single wafer, so the process method has been developed to the nanometer level. (nanometer-order).
然而,前述的成像方式皆因為有其限制,故其縱向解析度有限。因此,為了符合奈米等級的製程技術與獲得更佳的縱向解析度,可能需要發展更精密的檢測儀器與掃描技術,以獲取更高解析度的三維影像,並增加產品的良率來帶動產業的發展。However, the aforementioned imaging methods are limited in their longitudinal resolution because of their limitations. Therefore, in order to meet the nano-scale process technology and obtain better longitudinal resolution, it may be necessary to develop more sophisticated inspection instruments and scanning technologies to obtain higher-resolution 3D images and increase product yield to drive the industry. development of.
本發明實施例提供一種干涉成像裝置,包括射源裝置與成像裝置。射源裝置為極紫外線射源,且用以產生干涉成像裝置所需之輸入射源。成像裝置包括參考路徑輻射單元、樣本路徑輻射單元與輻射感測器,其中成像裝置接收輸入射源,並將輸入射源分為參考射束與樣本射束,且所述成像裝置之反射或聚焦元件皆為使用特定材料組合之多層膜片。所述之參考射束行經於參考路徑輻射單元,並聚焦於輻射感測器,此外,所述之樣本射束行經於樣本路徑輻射單元,並聚焦於輻射感測器,其中樣本路經輻射單元可供設置待測物。聚焦於輻射感測器之參考射束與樣本射束之間的波程差小於輸入射源的同調長度,且此兩射束相互干涉以產生干涉資訊,並透過輻射感測器擷取干涉資訊,其中所述之干涉資訊帶有待測物的結構資訊。Embodiments of the present invention provide an interference imaging apparatus including a source device and an imaging device. The source device is a very ultraviolet source and is used to generate an input source required for the interference imaging device. The imaging device includes a reference path radiation unit, a sample path radiation unit, and a radiation sensor, wherein the imaging device receives the input source and divides the input source into a reference beam and a sample beam, and the reflection or focus of the imaging device The components are all multilayer diaphragms using a combination of specific materials. The reference beam passes through the reference path radiation unit and is focused on the radiation sensor. Further, the sample beam passes through the sample path radiation unit and is focused on the radiation sensor, wherein the sample path passes through the radiation unit. It can be used to set the object to be tested. The wave path difference between the reference beam and the sample beam focused on the radiation sensor is less than the coherence length of the input source, and the two beams interfere with each other to generate interference information, and the interference information is extracted through the radiation sensor. The interference information described therein has structural information of the object to be tested.
本發明實施例提供一種干涉成像系統,包括射源裝置、監測裝置與成像裝置。射源裝置為極紫外線射源,並用以產生干涉成像裝置所需之輸入射源。利用監測裝置對輸入射源的激發過程進行監測。成像裝置包括參考路徑輻射單元、樣本路徑輻射單元與輻射感測器,其中成像裝置接收輸入射源,並將輸入射源分為參考射束與樣本射束,且所述成像裝置之反射或聚焦元件皆為使用特定材料組合之多層膜片。所述之參考射束行經於參考路徑輻射單元,並聚焦於輻射感測器,此外,所述之樣本射束行經於樣本路徑輻射單元,並聚焦於輻射感測器,其中樣本路徑輻射單元可供設置待測物。聚焦於輻射感測器之參考射束與樣本射束之間的波程差小於輸入射源的同調長度,且兩射束相互干涉以產生的干涉資訊,並透過輻射感測器擷取干涉資訊,其中所述之干涉資訊帶有待測物的結構資訊。Embodiments of the present invention provide an interference imaging system including a source device, a monitoring device, and an imaging device. The source device is an extreme ultraviolet source and is used to generate an input source required for the interference imaging device. The excitation process of the input source is monitored using a monitoring device. The imaging device includes a reference path radiation unit, a sample path radiation unit, and a radiation sensor, wherein the imaging device receives the input source and divides the input source into a reference beam and a sample beam, and the reflection or focus of the imaging device The components are all multilayer diaphragms using a combination of specific materials. The reference beam passes through the reference path radiation unit and is focused on the radiation sensor. Further, the sample beam passes through the sample path radiation unit and is focused on the radiation sensor, wherein the sample path radiation unit can For setting the object to be tested. The wave path difference between the reference beam and the sample beam focused on the radiation sensor is smaller than the coherence length of the input source, and the two beams interfere with each other to generate interference information, and the interference information is extracted through the radiation sensor. The interference information described therein has structural information of the object to be tested.
綜合上述,本發明實施例提供一種干涉成像裝置及系統,且其射源裝置可以是雷射生成式電漿極紫外線的輸入射源。此干涉成像裝置可對待測物進行掃描檢測,並透過輻射感測器與後端的運算電路產生輸出影像,以獲得待測物的結構資訊。In summary, the embodiments of the present invention provide an interference imaging apparatus and system, and the source device may be an input source of a laser generated plasma ultraviolet light. The interference imaging device can scan and detect the object to be tested, and generate an output image through the radiation sensor and the back end operation circuit to obtain structural information of the object to be tested.
為使能更進一步瞭解本發明之特徵及技術內容,請參閱以下有關本發明之詳細說明與附圖,但是此等說明與所附圖式僅係用來說明本發明,而非對本發明的權利範圍作任何的限制。The detailed description of the present invention and the accompanying drawings are to be understood by the claims The scope is subject to any restrictions.
請參閱圖1,圖1為本發明實施例提供的干涉成像裝置之方塊圖。干涉成像裝置1包括射源裝置10與成像裝置12。所述之成像裝置12還包括參考路徑輻射單元120與樣本路徑輻射單元122,成像裝置120之反射或聚焦元件皆為使用特定材料組合之多層膜片。Please refer to FIG. 1. FIG. 1 is a block diagram of an interference imaging apparatus according to an embodiment of the present invention. The interference imaging device 1 includes a source device 10 and an imaging device 12. The imaging device 12 further includes a reference path radiating unit 120 and a sample path radiating unit 122, and the reflecting or focusing elements of the imaging device 120 are all multilayer films using a combination of specific materials.
請一併參閱圖2,圖2為本發明實施例提供的干涉成像裝置之示意圖。圖1之干涉成像裝置1例如可以使用圖2之干涉成像裝置2來實現,但本發明不限於此。因此,參考路徑輻射單元120包括分束單元220、縱向位移單元222與第一參考射束聚焦單元224。樣本路徑輻射單元122包括分束單元220、橫向位移單元226、第一樣本射束聚焦單元228、目標單元234與第二樣本射束聚焦單元230。所述之分束單元220用以供參考路徑輻射單元120與樣本路徑輻射單元122共同使用。Please refer to FIG. 2 together. FIG. 2 is a schematic diagram of an interference imaging apparatus according to an embodiment of the present invention. The interference imaging apparatus 1 of Fig. 1 can be realized, for example, using the interference imaging apparatus 2 of Fig. 2, but the invention is not limited thereto. Accordingly, the reference path radiating unit 120 includes a splitting unit 220, a longitudinal displacement unit 222, and a first reference beam focusing unit 224. The sample path radiation unit 122 includes a beam splitting unit 220, a lateral displacement unit 226, a first sample beam focusing unit 228, a target unit 234, and a second sample beam focusing unit 230. The beam splitting unit 220 is used for the reference path radiating unit 120 to be used together with the sample path radiating unit 122.
射源裝置20可為一種輻射射源,以供產生輸入射源,且此輻射射源可為奈米波長等級的輻射射源。例如,射源裝置20為雷射生成式電漿(Laser Produced Plasma,LPP)極紫外線(Extreme Ultraviolet,EUV)射源,且極紫外線射源波長小於30奈米(30 nm),而極紫外線的頻寬主要大於0.1奈米(0.1 nm)。更詳細地說,為了符合目前逐漸微小化之製程所需要的高解析度,射源裝置20較佳地是上述的極紫外線射源,且可以是雷射生成式電漿極紫外線射源。The source device 20 can be a source of radiation for generating an input source, and the source of radiation can be a radiation source of nanometer wavelength. For example, the source device 20 is a Laser Produced Plasma (LPP) Extreme Ultraviolet (EUV) source, and the extreme ultraviolet source has a wavelength of less than 30 nm (30 nm), and is extremely ultraviolet. The bandwidth is mainly greater than 0.1 nm (0.1 nm). In more detail, in order to meet the high resolution required for the current miniaturized process, the source device 20 is preferably the above-described extreme ultraviolet source, and may be a laser-generated plasma extreme ultraviolet source.
根據上述,射源裝置20可使用驅動雷射激發出極紫外線,而極紫外線透過固定焦點之反射殼面被聚集與收集在電漿引發標靶所指定的位置上。如此,極紫外線將經由反射而被聚焦於指定位置的固定焦點上,以產生極紫外線射源的輸入射源。另外,上述電漿引發標靶可經由輸送系統連續輸送,且所產生之極紫外線還可以由極紫外線波前調變部件所準值化。需要說明的是,所述之極紫外線射源產生輸入射源的方法並非用以限定本發明。According to the above, the source device 20 can use the driving laser to excite the extreme ultraviolet rays, and the reflective surface of the extreme ultraviolet rays transmitted through the fixed focus is collected and collected at a position specified by the plasma-initiated target. As such, the extreme ultraviolet light will be focused by reflection onto a fixed focus at a specified location to produce an input source of extreme ultraviolet radiation. In addition, the above-mentioned plasma-initiated target can be continuously transported through the transport system, and the generated extreme ultraviolet rays can also be quantified by the extreme ultraviolet wavefront modulation component. It should be noted that the method of generating an input source by the extreme ultraviolet source is not intended to limit the present invention.
目標單元234可供設置待測物(sample)36,且可使所設置的待測物36在z方向進行平移,以調整待測物36位於可檢測的範圍。所述之待測物36可以是晶圓(wafer)、黏膜組織(mucosa)與器官等。總而言之,待測物36可能因為應用的領域不同而有不同類型。The target unit 234 is configured to set a sample 36, and the set object to be tested 36 can be translated in the z direction to adjust the object to be tested 36 to be within a detectable range. The object to be tested 36 may be a wafer, a mucosa, an organ, or the like. In summary, the test object 36 may be of different types depending on the field of application.
分束單元220接收並分束輸入射源,以產生參考射束與樣本射束,且可以是僅讓輸入射源部份穿透的反射裝置。所述之分束單元220可以是分束鏡、三稜鏡、具有矽成分的反射薄膜與具有矽化合物的反射薄膜等。舉例來說,分束單元220可由兩個具有矽成分的反射薄膜形成。The beam splitting unit 220 receives and splits the input source to produce a reference beam and a sample beam, and may be a reflective device that only partially penetrates the input source. The beam splitting unit 220 may be a beam splitter, a triplet, a reflective film having a germanium composition, a reflective film having a germanium compound, or the like. For example, the beam splitting unit 220 may be formed of two reflective films having a bismuth composition.
請參閱圖3,圖3為本發明實施例所提供的分束單元對輸入射源進行分束之示意圖。當一束輸入射源32射入分束單元220時,分束單元220根據其兩個擺放位置不同的反射薄膜將輸入射源32分成形成行經路徑不同的兩束射束34a與34b,射束34a與34b分別為參考射束與樣本射束。分束單元220所產生的參考射束34a之行經路徑位於參考路徑輻射單元120之中,而分束單元220所產生的樣本射束34b之行經路徑位於樣本路徑輻射單元122之中。Please refer to FIG. 3. FIG. 3 is a schematic diagram of splitting an input source by a splitting unit according to an embodiment of the present invention. When a beam of input source 32 is incident on the beam splitting unit 220, the beam splitting unit 220 divides the input source 32 into two beams 34a and 34b which form different paths according to the two reflective films having different positions. Beams 34a and 34b are the reference beam and the sample beam, respectively. The path of the reference beam 34a generated by the beam splitting unit 220 is located in the reference path radiating unit 120, and the path of the sample beam 34b generated by the splitting unit 220 is located in the sample path radiating unit 122.
請再參閱圖2,縱向位移單元222接收參考射束,以產生縱向位移參考射束,而橫向位移單元226接收樣本射束,以產生橫向位移樣本射束。所述之縱向位移單元222可調整參考路徑輻射單元120中的路徑長度(即參考射束行經的波程),而橫向位移單元226可調整樣本路徑輻射單元122中的路徑長度。Referring again to FIG. 2, longitudinal displacement unit 222 receives the reference beam to produce a longitudinal displacement reference beam, and lateral displacement unit 226 receives the sample beam to produce a lateral displacement sample beam. The longitudinal displacement unit 222 can adjust the path length in the reference path radiating unit 120 (ie, the wave path through which the reference beam travels), and the lateral displacement unit 226 can adjust the path length in the sample path radiating unit 122.
根據上述,縱向位移單元222與橫向位移單元226用以調整兩射束之波程差(即參考路徑輻射單元與樣本路徑輻射單元之路徑長度的差異)。透過調整兩射束之波程差將可以完成待測物36的縱向掃描。當波程差不同時,所量測的待測物36之深度亦不同,以產生不同之干涉資訊。舉例來說,干涉成像裝置2可使用時域同調斷層攝影術(Time Domain Optical Coherence Tomography,TDOCT),利用調整波程差對待測物36進行縱向(z方向或深度)掃描,根據不同深度的干涉資訊,以獲取待測物36的結構資訊(包括深度結構資訊)。需要說明的是,上述掃描的方式並非用以限定本發明。According to the above, the longitudinal displacement unit 222 and the lateral displacement unit 226 are used to adjust the wave path difference of the two beams (i.e., the difference in path length between the reference path radiation unit and the sample path radiation unit). The longitudinal scanning of the object to be tested 36 can be completed by adjusting the wave path difference of the two beams. When the wave path difference is different, the measured depth of the object to be tested 36 is also different to generate different interference information. For example, the interference imaging device 2 can use Time Domain Optical Coherence Tomography (TDOCT) to perform longitudinal (z-direction or depth) scanning of the object 36 by adjusting the wave-path difference, and interference according to different depths. Information to obtain structural information (including deep structure information) of the object to be tested 36. It should be noted that the manner of scanning described above is not intended to limit the present invention.
橫向位移單元226與第一樣本射束聚焦單元228可改變樣本聚焦射束的聚焦位置,以達成待測物36的橫向掃描(x方向與/或y方向)。舉例來說,請參閱圖4,圖4為本發明實施例所提供的樣本聚焦射束聚焦在待測物之焦點位置的示意圖。樣本聚焦射束40聚焦在目標單元234的待測物36之表面或內部的位置,產生焦點為焦點38a,且焦點38a的座標為(0,0,0)。當改變圖2之橫向位移單元226的位置與第一樣本射束聚焦單元228的偏轉角度,則焦點之橫向位置會被改變,例如從焦點38a的位置改變至焦點38b的位置,其中焦點38b的座標為(10,0,0)。因此,根據上述的方法,可不斷地調整樣本焦距射束40的焦點在待測物36之表面或內部之x與/或y方向位置,以達成對待測物36的橫向掃描。The lateral displacement unit 226 and the first sample beam focusing unit 228 can change the focus position of the sample focus beam to achieve a lateral scan (x direction and/or y direction) of the object 36 to be tested. For example, please refer to FIG. 4. FIG. 4 is a schematic diagram of focusing a sample focused beam on a focus position of an object to be tested according to an embodiment of the present invention. The sample focusing beam 40 is focused on the surface or inside of the object 36 to be tested 36, producing a focus as the focus 38a, and the coordinates of the focus 38a are (0, 0, 0). When the position of the lateral displacement unit 226 of FIG. 2 is changed from the deflection angle of the first sample beam focusing unit 228, the lateral position of the focus is changed, for example, from the position of the focus 38a to the position of the focus 38b, wherein the focus 38b The coordinates are (10,0,0). Therefore, according to the above method, the position of the focus of the sample focal length beam 40 on the surface or inside of the object 36 can be constantly adjusted in the x and/or y direction to achieve lateral scanning of the object to be tested 36.
第一參考射束聚焦單元224接收縱向位移參考射束,以產生參考資訊聚焦射束聚焦於輻射感測器232,而第二樣本射束聚焦單元230接收待測物36反射的樣本資訊射束,以產生樣本資訊聚焦射束聚焦於輻射感測器232。所述之參考資訊聚焦射束與樣本資訊聚焦射束可形成干涉資訊。更精確地說,當樣本資訊射束與參考資訊聚焦射束之波程差小於射源裝置10的同調長度時,輻射感測器323可以收到強度較強的干涉資訊,且如同前面所述,干涉資訊帶有待測物36之結構資訊。The first reference beam focusing unit 224 receives the longitudinal displacement reference beam to generate a reference information focused beam focused on the radiation sensor 232, and the second sample beam focusing unit 230 receives the sample information beam reflected by the object under test 36. The focus beam is focused on the radiation sensor 232 to generate a sample information. The reference information focusing beam and the sample information focusing beam may form interference information. More precisely, when the wave path difference between the sample information beam and the reference information focusing beam is less than the coherence length of the source device 10, the radiation sensor 323 can receive the stronger interference information, and as described above. The interference information carries the structural information of the object to be tested 36.
輻射感測器232收到的干涉資訊可用以產生輸出影像。所述之輻射感測器232可為輻射強度感測器或電荷耦合元件陣列等,且可搭配後端計算處理晶片來進行分析,但本發明不以此為限。舉例來說,輻射感測器232為輻射強度感測器。輻射感測器232依據所接收到之輻射強度,產生相對應的電訊號,再藉由主機分析此電訊號,以產生輸出影像(例如,待測物36的三維斷層掃描影像,但不以此限定本發明)。The interference information received by the radiation sensor 232 can be used to generate an output image. The radiation sensor 232 can be a radiation intensity sensor or a charge coupled device array or the like, and can be analyzed with a back end calculation processing chip, but the invention is not limited thereto. For example, radiation sensor 232 is a radiation intensity sensor. The radiation sensor 232 generates a corresponding electrical signal according to the received radiation intensity, and then analyzes the electrical signal by the host to generate an output image (for example, a three-dimensional tomographic image of the object to be tested 36, but not The invention is defined).
於所述成像裝置22中,分束單元220、第一參考射束聚焦單元224、第一樣本射束聚焦單元228或第二樣本射束聚焦單元230之材料可使用碳化矽、矽、鋁、鈹、鉬、銅、鎳、陶瓷玻璃及其組合物等的至少其中之一種物質來組成的多層膜片。需要說明的是,上述之材料並非用以限定本發明。In the imaging device 22, the material of the beam splitting unit 220, the first reference beam focusing unit 224, the first sample beam focusing unit 228 or the second sample beam focusing unit 230 may use tantalum carbide, niobium, aluminum. A multilayer film composed of at least one of cerium, molybdenum, copper, nickel, ceramic glass, and combinations thereof. It should be noted that the above materials are not intended to limit the invention.
除此之外,第一參考射束聚焦單元224、第一樣本射束聚焦單元228或第二樣本射束聚焦單元230係為部份穿透的反射裝置,且特別是用以反射極紫外線之反射裝置,例如可以由具有固定焦點之反射殼面所組成,其中此反射殼片亦是上述特定物質所組成的多層膜片。In addition, the first reference beam focusing unit 224, the first sample beam focusing unit 228 or the second sample beam focusing unit 230 is a partially penetrating reflecting device, and in particular for reflecting extreme ultraviolet rays. The reflecting means can be composed, for example, of a reflective shell having a fixed focus, wherein the reflecting shell is also a multilayer diaphragm composed of the above specific substances.
[干涉成像裝置之另一實施例][Another embodiment of the interference imaging device]
請同時參閱圖2與圖5,圖5為本發明另一實施例提供的干涉成像裝置之示意圖。相較於圖2之干涉成像裝置2的不同處在於,干涉成像裝置5中的參考路徑輻射單元120(繪示於圖1)除了包括縱向位移單元522與第一參考射束聚焦單元524之外,參考路徑輻射單元520更包括調變單元526與第二參考射束聚焦單元536,。除此之外,干涉成像裝置5中的樣本路徑輻射單元122(繪示於圖1)包括第一樣本射束聚焦單元528、第二樣本射束聚焦單元530與目標單元534,但卻不具有橫向位移單元。Please refer to FIG. 2 and FIG. 5 simultaneously. FIG. 5 is a schematic diagram of an interference imaging apparatus according to another embodiment of the present invention. The difference from the interference imaging device 2 of FIG. 2 is that the reference path radiation unit 120 (shown in FIG. 1) in the interference imaging device 5 includes, in addition to the longitudinal displacement unit 522 and the first reference beam focusing unit 524. The reference path radiating unit 520 further includes a modulation unit 526 and a second reference beam focusing unit 536. In addition, the sample path radiating unit 122 (shown in FIG. 1) in the interference imaging device 5 includes a first sample beam focusing unit 528, a second sample beam focusing unit 530, and a target unit 534, but does not With a lateral displacement unit.
在干涉成像裝置5中,調變單元526與縱向位移單元522用以調整兩射束的波程差,而在干涉成像裝置2中,卻是使用縱向位移單元222與橫向位移單元226調整兩射束的波程差。總而言之,干涉成像裝置2、5是雖使用不同元件來調整兩射束的波程差,但皆可得到待測物56的縱向(z方向)資訊。In the interference imaging device 5, the modulation unit 526 and the longitudinal displacement unit 522 are used to adjust the wave path difference of the two beams, while in the interference imaging device 2, the longitudinal displacement unit 222 and the lateral displacement unit 226 are used to adjust the two shots. The wave path difference of the beam. In summary, the interference imaging devices 2, 5 use different elements to adjust the wave path difference of the two beams, but the longitudinal (z-direction) information of the object to be tested 56 can be obtained.
干涉成像裝置5的掃描方式採用全域同調斷層攝影術(Full-Field Optical Coherence Tomography),當樣本聚焦射束聚焦於待測物56上時,射束的聚焦並非為一個點,因此,可減少橫向掃描的時間。除此之外,於此實施例中,待測物56與輸入射源的相對位置恆定不變,故不需使用橫向掃描元件。要說明的是,以上所述僅為本發明之一種實施例,其並非用以侷限本發明之專利範圍。The scanning method of the interference imaging device 5 adopts Full-Field Optical Coherence Tomography. When the sample focusing beam is focused on the object to be tested 56, the focus of the beam is not a point, and therefore, the lateral direction can be reduced. The time of the scan. In addition, in this embodiment, the relative position of the object to be tested 56 and the input source is constant, so that it is not necessary to use a lateral scanning element. It is to be understood that the above description is only one embodiment of the present invention and is not intended to limit the scope of the invention.
於圖5的實施例中,分束單元520會將輸入射源分束為參考射束與樣本射束。第一樣本射束聚焦單元528接收樣本射束,並產生樣本聚焦射束聚焦在目標單元534的待測物56之表面或內部的位置。第二參考射束聚焦單元536接收待測物56反射的樣本資訊射束,以產生樣本資訊聚焦射束聚焦於輻射感測器532。In the embodiment of FIG. 5, beam splitting unit 520 splits the input source into a reference beam and a sample beam. The first sample beam focusing unit 528 receives the sample beam and produces a position at which the sample focused beam is focused on the surface or interior of the object 56 of the target unit 534. The second reference beam focusing unit 536 receives the sample information beam reflected by the object to be tested 56 to generate a sample information focusing beam that is focused on the radiation sensor 532.
調變單元526與縱向位移單元522用以調整兩射束的波程差,並利用調整波程差對待測物56進行縱向(z方向或深度)掃描,根據不同深度的干涉資訊,以獲取待測物56的結構資訊(包括深度結構資訊),其中調變單元526例如是相位延遲調變機構。需要說明的是,縱向位移單元522可以調整參考射束行經的波程,使參考射束與樣本射束行經的波程大約等長。然後,再透過調變單元526調整參考射束行經的波程,以使參考射束與樣本射束行經的波程差小於射源裝置50的同調長度。The modulation unit 526 and the longitudinal displacement unit 522 are configured to adjust the wave path difference of the two beams, and perform longitudinal (z-direction or depth) scanning of the object to be tested 56 by adjusting the wave-path difference, according to interference information of different depths, to obtain The structural information of the object 56 (including the depth structure information), wherein the modulation unit 526 is, for example, a phase delay modulation mechanism. It should be noted that the longitudinal displacement unit 522 can adjust the wave path of the reference beam to make the reference beam and the sample beam travel approximately the same length. Then, the wave path of the reference beam is adjusted by the modulation unit 526 such that the wave path difference between the reference beam and the sample beam is smaller than the coherence length of the source device 50.
更進一步地說,調變單元526接收參考射束,並產生調變射束。第二參考射束聚焦單元536接收調變射束,以產生參考聚焦射束聚焦於縱向位移單元522。縱向位移單元522接收參考聚焦射束,並且產生縱向位移參考射束。接著,第一參考射束聚焦單元524接收縱向位移參考射束,以產生參考資訊聚焦射束聚焦於輻射感測器532。如前所述,所述之縱向位移參考射束與樣本資訊聚焦射束可形成干涉資訊,而被輻射感測器532接收。More specifically, modulation unit 526 receives the reference beam and produces a modulated beam. The second reference beam focusing unit 536 receives the modulated beam to produce a reference focused beam focused on the longitudinal displacement unit 522. The longitudinal displacement unit 522 receives the reference focused beam and produces a longitudinal displacement reference beam. Next, the first reference beam focusing unit 524 receives the longitudinal displacement reference beam to produce a reference information focused beam focused on the radiation sensor 532. As previously described, the longitudinally displaced reference beam and the sample information focused beam may form interference information and be received by the radiation sensor 532.
於所述成像裝置52中,分束單元520、第一參考射束聚焦單元524、第二參考射束聚焦單元536、第一樣本射束聚焦單元528或第二樣本射束聚焦單元530之材料可使用碳化矽、矽、鋁、鈹、鉬、銅、鎳、陶瓷玻璃及其組合物等的至少其中之一種物質來組成的多層膜片。需要說明的是,上述之材料並非用以限定本發明。In the imaging device 52, the beam splitting unit 520, the first reference beam focusing unit 524, the second reference beam focusing unit 536, the first sample beam focusing unit 528 or the second sample beam focusing unit 530 The material may be a multilayer film composed of at least one of cerium carbide, cerium, aluminum, cerium, molybdenum, copper, nickel, ceramic glass, and the like. It should be noted that the above materials are not intended to limit the invention.
除此之外,分束單元520、第一參考射束聚焦單元524、第二參考射束聚焦單元536、第一樣本射束聚焦單元528或第二樣本射束聚焦單元530係為部份穿透的反射裝置,且特別是用以反射極紫外線之反射裝置,例如可以由具有固定焦點之反射殼面所組成,其中此反射殼片亦是上述特定物質所組成的多層膜片。In addition to this, the beam splitting unit 520, the first reference beam focusing unit 524, the second reference beam focusing unit 536, the first sample beam focusing unit 528 or the second sample beam focusing unit 530 are partially The penetrating reflecting means, and in particular the reflecting means for reflecting the extreme ultraviolet rays, for example, may be composed of a reflecting shell having a fixed focus, wherein the reflecting shell is also a multilayer diaphragm composed of the above specific substance.
請同時參閱圖1與圖6,圖6為本發明另一實施例提供的干涉成像裝置之示意圖。干涉成像裝置6包括輻射裝置60與成像裝置62,其中圖1之射源裝置10與成像裝置12可分別使用圖6之射源裝置60與成像裝置62來實現,但本發明不限於此。因此,參考路徑輻射單元120包括輻射反射單元620、射束處理單元622、參考射束聚焦單元628、參考單元630與射束聚焦單元626。樣本路徑輻射單元122包括輻射反射單元620、射束處理單元622、樣本射束聚焦單元624、目標單元634與射束聚焦單元626。所述之輻射反射單元620、射束處理單元622與射束聚焦單元626用以供參考路徑輻射單元120與樣本路徑輻射單元122共同使用,其中射束處理單元622係為分束與疊合單元。所述之射源裝置60可使用圖2中的射源裝置20來實現,但本發明不限於此。Please refer to FIG. 1 and FIG. 6 simultaneously. FIG. 6 is a schematic diagram of an interference imaging apparatus according to another embodiment of the present invention. The interference imaging device 6 includes a radiation device 60 and an imaging device 62, wherein the source device 10 and the imaging device 12 of FIG. 1 can be implemented using the source device 60 and the imaging device 62 of FIG. 6, respectively, but the invention is not limited thereto. Accordingly, the reference path radiating unit 120 includes a radiation reflecting unit 620, a beam processing unit 622, a reference beam focusing unit 628, a reference unit 630, and a beam focusing unit 626. The sample path radiation unit 122 includes a radiation reflection unit 620, a beam processing unit 622, a sample beam focusing unit 624, a target unit 634, and a beam focusing unit 626. The radiation reflecting unit 620, the beam processing unit 622 and the beam focusing unit 626 are used by the reference path radiating unit 120 and the sample path radiating unit 122, wherein the beam processing unit 622 is a splitting and overlapping unit. . The source device 60 can be implemented using the source device 20 of FIG. 2, but the invention is not limited thereto.
目標單元634可供設置待測物66,且干涉成像裝置6的掃描方式採用全域同調斷層攝影術,當樣本聚焦射束聚焦於待測物66上時,射束的聚焦並非為一個點,因此,可減少橫向掃描的時間。除此之外,於此實施例中,不需使用橫向掃描元件。要說明的是,以上所述僅為本發明之一種實施例,其並非用以侷限本發明之專利範圍。The target unit 634 can be used to set the object to be tested 66, and the scanning mode of the interference imaging device 6 adopts global tonal tomography. When the sample focusing beam is focused on the object to be tested 66, the focus of the beam is not a point, therefore Can reduce the time of horizontal scanning. In addition to this, in this embodiment, it is not necessary to use a lateral scanning element. It is to be understood that the above description is only one embodiment of the present invention and is not intended to limit the scope of the invention.
根據上述,輻射感測器632可為至少一維之電荷耦合元件陣列,並可搭配後端計算處理晶片進行分析,藉此獲得至少一維的橫向結構資訊。另外,參考單元630用以調整行經參考路徑輻射單元120之參考射束與的波程,以藉此行經參考路徑輻射單元120之參考射束與行經樣本路徑輻射單元122之樣本射束之間的波程差(亦即聚焦於輻射感測器632之干涉射束中相關於樣本反射射束與參考反射射束之成份的波程差),其中參考單元630例如是相位延遲調變單元。According to the above, the radiation sensor 632 can be an array of at least one-dimensional charge coupled elements, and can be analyzed with a back-end computation processing wafer, thereby obtaining at least one-dimensional lateral structure information. In addition, the reference unit 630 is configured to adjust the wave path of the reference beam of the reference path radiating unit 120, thereby passing between the reference beam of the reference path radiating unit 120 and the sample beam passing through the sample path radiating unit 122. The wave path difference (i.e., the wave path difference in the interference beam focused on the radiation sensor 632 with respect to the components of the sample reflected beam and the reference reflected beam), wherein the reference unit 630 is, for example, a phase delay modulation unit.
於圖6的實施例中,輻射反射單元620反射所接收的輸入射源,並產生反射射源。射束處理單元622接收反射射源,並產生參考射束與樣本射束。樣本射束聚焦單元624接收樣本射束,並產生樣本聚焦射束聚焦在待測物66之表面或內部的位置。待測物66反射樣本聚焦射束,並產生樣本反射射束,且透過樣本射束聚焦單元624反射樣本反射射束至射束處理單元622。In the embodiment of Figure 6, the radiation reflecting unit 620 reflects the received input source and produces a reflected source. Beam processing unit 622 receives the reflected source and produces a reference beam and a sample beam. The sample beam focusing unit 624 receives the sample beam and produces a position at which the sample focused beam is focused on the surface or interior of the object to be tested 66. The object to be tested 66 reflects the sample focusing beam and produces a sample reflected beam, and the sample beam focusing unit 624 reflects the sample reflected beam to the beam processing unit 622.
參考射束聚焦單元628接收參考射束,並產生參考聚焦射束聚焦在參考單元630。參考單元630反射參考聚焦射束,並產生參考反射射束,且透過參考射束聚焦單元628反射參考反射至射束處理單元622。另外,射束處理單元622接收樣本反射射束與參考反射射束,透過射束處理單元622將樣本反射射束與參考反射射束疊合後,產生疊合射束。接著,射束聚焦單元626反射疊合射束,並將干涉射束聚焦於輻射感測器632,以獲得疊合射束中的干涉資訊。The reference beam focusing unit 628 receives the reference beam and produces a reference focused beam that is focused at the reference unit 630. The reference unit 630 reflects the reference focused beam and produces a reference reflected beam, and reflects the reference reflection to the beam processing unit 622 through the reference beam focusing unit 628. In addition, the beam processing unit 622 receives the sample reflected beam and the reference reflected beam, and the beam splitting beam is superimposed by the beam processing unit 622 to generate a superimposed beam. Next, beam focusing unit 626 reflects the superimposed beam and focuses the interfering beam on radiation sensor 632 to obtain interference information in the superimposed beam.
所述之射束處理單元622可以是分束鏡、三稜鏡、具有矽成分的反射薄膜與具有矽化合物的反射薄膜等。舉例來說,射束處理單元622可為分束鏡,當分束鏡接收的射源為一束射束,部分射束經由分束鏡反射並產生參考射束,且部分射束穿透分束鏡並產生樣本射束,藉此產生行經路徑不同的兩束射束,以達到分束的效果。除此之外,射束處理單元622還可反射樣本反射射束,並且使參考反射射束可透過射束處理單元622,使得樣本反射射束與參考反射射束相互疊合,以達到疊合的效果。要說明的是,以上所述之射束分束與疊合的方法並非用以限定本發明。The beam processing unit 622 may be a beam splitter, a triplet, a reflective film having a germanium composition, a reflective film having a germanium compound, or the like. For example, the beam processing unit 622 can be a beam splitter. When the beam splitter receives a source of beam, the partial beam is reflected by the beam splitter and produces a reference beam, and the partial beam penetrates. The beam mirror produces a sample beam, thereby producing two beams with different path paths to achieve the effect of splitting. In addition, the beam processing unit 622 can also reflect the sample reflected beam, and the reference reflected beam can be transmitted through the beam processing unit 622 such that the sample reflected beam and the reference reflected beam overlap each other to achieve superposition. Effect. It is to be noted that the beam splitting and superposition methods described above are not intended to limit the invention.
於所述成像裝置62中,輻射反射單元620、樣本射束聚焦單元624、射束聚焦單元626與參考射束聚焦單元628之材料可使用碳化矽、矽、鋁、鈹、鉬、銅、鎳、陶瓷玻璃及其組合物等的至少其中之一種物質來組成的多層膜片。需要說明的是,上述之材料並非用以限定本發明。In the imaging device 62, the materials of the radiation reflecting unit 620, the sample beam focusing unit 624, the beam focusing unit 626 and the reference beam focusing unit 628 may use tantalum carbide, niobium, aluminum, tantalum, molybdenum, copper, nickel. A multilayer film composed of at least one of ceramic glass, a composition thereof, and the like. It should be noted that the above materials are not intended to limit the invention.
除此之外,輻射反射單元620、樣本射束聚焦單元624、射束聚焦單元626與參考射束聚焦單元628係為部份穿透的反射裝置,且特別是用以反射極紫外線之反射裝置,例如可以由具有固定焦點之反射殼面所組成,其中此反射殼片亦是上述特定物質所組成的多層膜片。In addition, the radiation reflecting unit 620, the sample beam focusing unit 624, the beam focusing unit 626 and the reference beam focusing unit 628 are partially penetrating reflecting means, and in particular, reflecting means for reflecting extreme ultraviolet rays. For example, it may be composed of a reflective shell having a fixed focus, wherein the reflective shell is also a multilayer diaphragm composed of the above specific substances.
請同時參閱圖6與圖7,圖7為本發明另一實施例提供的干涉成像裝置之示意圖。圖7的輻射反射單元720、參考單元730與射束處理單元722相同於圖6的輻射反射單元620、參考單元630與射束處理單元622,故不再重複地贅述。Please refer to FIG. 6 and FIG. 7 simultaneously. FIG. 7 is a schematic diagram of an interference imaging apparatus according to another embodiment of the present invention. The radiation reflecting unit 720, the reference unit 730, and the beam processing unit 722 of FIG. 7 are the same as the radiation reflecting unit 620, the reference unit 630, and the beam processing unit 622 of FIG. 6, and therefore will not be repeatedly described.
相較於圖6之干涉成像裝置6的不同處在於,在干涉成像裝置7中,除了包括色散單元736之外,樣本路徑輻射單元122(繪示於圖1)還包括橫向位移單元728,且目標單元734除了可供設置待測物76之外,還可使所設置的待測物76在z方向進行平移,以調整待測物76位於可檢測的範圍。The difference from the interference imaging device 6 of FIG. 6 is that, in the interference imaging device 7, the sample path radiation unit 122 (shown in FIG. 1) includes a lateral displacement unit 728 in addition to the dispersion unit 736, and In addition to the object 76 to be set, the target unit 734 can also shift the set object to be tested 76 in the z direction to adjust the object to be tested 76 to be in a detectable range.
除此之外,在干涉成像裝置7中,橫向位移單元728用以調整兩射束之波程差,且透過樣本射束聚焦單元724,改變樣本聚焦射束的聚焦位置,以達成待測物76的橫向掃描(x方向與/或y方向)。橫向位移單元728可接收樣本射束,以產生橫向位移參考射束於樣本射束聚焦單元724,且樣本射束聚焦單元724產生聚焦樣本射束於待測物76。待測物76反射聚焦樣本射束,以產生樣本反射射束,且樣本反射射束可以透過樣本射束聚焦單元724再反射至橫向位移單元728,橫向位移單元728接著產生橫向位移樣本反射射束給射束處理單元722。In addition, in the interference imaging device 7, the lateral displacement unit 728 is configured to adjust the wave path difference of the two beams, and through the sample beam focusing unit 724, change the focus position of the sample focusing beam to achieve the object to be tested. Horizontal scan of 76 (x direction and / or y direction). The lateral displacement unit 728 can receive the sample beam to produce a lateral displacement reference beam to the sample beam focusing unit 724, and the sample beam focusing unit 724 produces a focused sample beam to the analyte 76. The object to be tested 76 reflects the focused sample beam to produce a sample reflected beam, and the sample reflected beam can be reflected by the sample beam focusing unit 724 to the lateral displacement unit 728, which in turn produces a laterally displaced sample reflected beam. The beam processing unit 722 is applied.
射束處理單元722接收參考反射射束與橫向位移樣本反射射束,並產生疊合射束。射束處理單元722所產生的疊合射束經由色散單元736色散,而產生多個色散射束。接著,射束聚焦單元726接收多個色散射束,以產生多個聚焦色散射束聚焦於輻射感測器732,其中多個聚焦色散射束具有干涉資訊,且此干涉資訊對應於待測物76的結構資訊。另外,所述之色散單元736可為光柵(grating)與三稜鏡等。Beam processing unit 722 receives the reference reflected beam and the laterally displaced sample reflected beam and produces a superimposed beam. The superimposed beam generated by the beam processing unit 722 is dispersed via the dispersive unit 736 to produce a plurality of color scattered beams. Next, the beam focusing unit 726 receives the plurality of color scatter beams to generate a plurality of focused color scatter beams that are focused on the radiation sensor 732, wherein the plurality of focused color scatter beams have interference information, and the interference information corresponds to the object to be tested 76 structural information. In addition, the dispersing unit 736 may be a grating, a triplet, or the like.
由於多個色散射束之入射角度不同會造成波程差,使得射束聚焦單元726聚焦於輻射感測器732上時,射束的聚焦並非為一個點,因此,輻射感測器732可為至少一維的電荷耦合元件陣列,以獲取待測物76之縱向(z方向或深度)結構資訊。另外,待測物76與輸入射源的相對位置恆定不變,故不需進行縱向掃描元件。Since the difference in the incident angles of the plurality of color scatter beams causes a wave path difference such that the beam focusing unit 726 is focused on the radiation sensor 732, the focus of the beam is not a point, and therefore, the radiation sensor 732 can be At least one dimensional array of charge coupled devices to obtain longitudinal (z-direction or depth) structural information of the analyte 76. In addition, the relative position of the object to be tested 76 and the input source is constant, so that the longitudinal scanning element is not required.
舉例來說,干涉成像裝置7可使用頻域同調斷層攝影術(Spectral Domain Optical Coherence Tomography,SDOCT),利用色散單元736處理干涉資訊,並聚焦於輻射感測器732,搭配後端計算處理晶片進行傅立葉公式的轉換,來獲得待測物的深度(z方向或縱向)結構資訊。要說明的是,以上所述僅為本發明之一種實施例,其並非用以侷限本發明之專利範圍。For example, the interferometric imaging device 7 can use the Spectral Domain Optical Coherence Tomography (SDOCT) to process the interference information by using the dispersive unit 736, and focus on the radiation sensor 732, and perform the processing on the back end of the processing chip. The transformation of the Fourier equation to obtain the depth (z-direction or longitudinal) structural information of the object to be tested. It is to be understood that the above description is only one embodiment of the present invention and is not intended to limit the scope of the invention.
於所述成像裝置72中,輻射反射單元720、樣本射束聚焦單元724與射束聚焦單元726之材料可使用碳化矽、矽、鋁、鈹、鉬、銅、鎳、陶瓷玻璃及其組合物等的至少其中之一種物質來組成的多層膜片。需要說明的是,上述之材料並非用以限定本發明。In the imaging device 72, the materials of the radiation reflecting unit 720, the sample beam focusing unit 724 and the beam focusing unit 726 may use tantalum carbide, niobium, aluminum, tantalum, molybdenum, copper, nickel, ceramic glass and combinations thereof. A multilayer film composed of at least one of the materials. It should be noted that the above materials are not intended to limit the invention.
除此之外,輻射反射單元720、樣本射束聚焦單元724與射束聚焦單元726係為部份穿透的反射裝置,且特別是用以反射極紫外線之反射裝置,例如可以由具有固定焦點之反射殼面所組成,其中此反射殼片亦是上述特定物質所組成的多層膜片。In addition, the radiation reflecting unit 720, the sample beam focusing unit 724 and the beam focusing unit 726 are partially penetrating reflecting means, and in particular, reflecting means for reflecting extreme ultraviolet rays, for example, may have a fixed focus. The reflective shell is composed of a multilayer film composed of the above specific materials.
請參閱圖8,圖8為本發明實施例提供的干涉成像系統之示意圖。干涉成像系統8包括射源裝置80、成像裝置82與監測裝置84,其中成像裝置82可使用圖2之成像裝置22或圖5之成像裝置52來實現,但本發明不限於此。Please refer to FIG. 8. FIG. 8 is a schematic diagram of an interference imaging system according to an embodiment of the present invention. The interference imaging system 8 includes a source device 80, an imaging device 82, and a monitoring device 84, wherein the imaging device 82 can be implemented using the imaging device 22 of FIG. 2 or the imaging device 52 of FIG. 5, although the invention is not limited thereto.
射源裝置80可使用圖2之射源裝置20來實現,但本發明不限於此。除此之外,射源裝置80亦可為一種輻射射源,以供激發出輸入射源,其中所述之激發出輸入射源需在真空狀態下進行,且真空度可在10-6 torr以下。使用擴束單元800(例如,Keplerian type或Galilean type的射束擴展器等)來擴散射束,藉由聚焦單元聚焦被擴散的輸入射源於電漿引發標靶的焦點上,以形成干涉成像系統8所需之輸入射源。要說明的是,輸入射源的產生方法並非用以限定本發明。The source device 80 can be implemented using the source device 20 of FIG. 2, but the invention is not limited thereto. In addition, the source device 80 can also be a radiation source for exciting the input source, wherein the excitation of the input source is performed under vacuum, and the vacuum can be 10-6 torr. the following. A beam expander unit 800 (eg, a Keplerian type or a Galilean type beam expander, etc.) is used to diffuse the beam, and the diffused input is focused by the focusing unit to focus on the focus of the plasma-initiated target to form an interference imaging. The input source required for system 8. It should be noted that the method of generating the input source is not intended to limit the present invention.
監測裝置84為一種外部監測的裝置,且可對射源裝置80激發輸入射源的過程進行多項監測。舉例來說,利用輻射感測器840監測電漿引發標靶之運動過程,並配合滴落頻率來同步控制輸入射源的脈衝時距;利用通過電漿引發標靶之焦點附近的雷射射束對輸入射源進行干涉,並透過干涉器842來監測電漿之擴散運動的狀況;偵測器844可設置於輸入射源穿透位置附近,以監測殘餘的輸入射源(即沒有進入成像裝置82的殘餘射束)之功率與頻譜等,其中,所述之偵測器844可為感測裝置或光譜儀(spectrometer)等。要說明的是,所述之監測裝置84所監測的項目並非用以限定本發明。The monitoring device 84 is an externally monitored device and can perform multiple monitoring of the process by which the source device 80 activates the input source. For example, the radiation sensor 840 is used to monitor the motion process of the plasma-induced target, and the drip frequency is used to synchronously control the pulse time interval of the input source; the laser is used to induce the laser near the focus of the target. The beam interferes with the input source and monitors the condition of the diffusion motion of the plasma through the interferometer 842; the detector 844 can be placed adjacent to the input source penetration location to monitor the residual input source (ie, does not enter imaging) The power and spectrum of the residual beam of the device 82, wherein the detector 844 can be a sensing device or a spectrometer or the like. It is to be noted that the items monitored by the monitoring device 84 are not intended to limit the invention.
請參閱圖9,圖9為本發明另一實施例提供的干涉成像系統之示意圖。於干涉成像系統9中,射源裝置90與監測裝置94可分別使用圖8之射源裝置80與監測裝置84來實現,但本發明不限於此。成像裝置92可使用圖6之成像裝置62或圖7之成像裝置72來實現,但本發明不限於此。因此,所述之干涉成像系統9亦可對待測物進行掃描檢測,並利用監測裝置84來監測輸入射源,且透過輻射感測器產生輸出影像,以獲得待測物的結構資訊。Please refer to FIG. 9. FIG. 9 is a schematic diagram of an interference imaging system according to another embodiment of the present invention. In the interference imaging system 9, the source device 90 and the monitoring device 94 can be implemented using the source device 80 and the monitoring device 84 of FIG. 8, respectively, but the invention is not limited thereto. The imaging device 92 can be implemented using the imaging device 62 of FIG. 6 or the imaging device 72 of FIG. 7, but the invention is not limited thereto. Therefore, the interference imaging system 9 can also perform scanning detection on the object to be tested, and monitor the input source by using the monitoring device 84, and generate an output image through the radiation sensor to obtain structural information of the object to be tested.
綜上所述,本發明實施例提供一種干涉成像裝置及其系統,且此干涉成像裝置及其系統具有射源裝置與成像裝置。射源裝置所激發的極紫外線輸入射源,經由成像裝置接收輸入射源並將輸入射源分為兩射束,且根據兩射束所形成的干涉資訊,以對待測物進行三維斷層檢測。因此,干涉成像裝置及其系統可提升輸出影像的縱向與橫向之解析度,使得輸出影像達到奈米等級的解析度。In summary, the embodiments of the present invention provide an interference imaging apparatus and a system thereof, and the interference imaging apparatus and system thereof have a source apparatus and an imaging apparatus. The extreme ultraviolet input source excited by the source device receives the input source via the imaging device and divides the input source into two beams, and performs three-dimensional tomographic detection on the object to be tested according to the interference information formed by the two beams. Therefore, the interference imaging device and its system can improve the resolution of the longitudinal and lateral directions of the output image, so that the output image reaches the resolution of the nanometer level.
以上所述僅為本發明之實施例,其並非用以侷限本發明之專利範圍。The above description is only an embodiment of the present invention, and is not intended to limit the scope of the invention.
1、2、5、6、7...干涉成像裝置1, 2, 5, 6, 7. . . Interference imaging device
10、20、50、60、70、80、90...射源裝置10, 20, 50, 60, 70, 80, 90. . . Source device
12、22、52、62、72、82、92...成像裝置12, 22, 52, 62, 72, 82, 92. . . Imaging device
120...參考路徑輻射單元120. . . Reference path radiating element
122...樣本路徑輻射單元122. . . Sample path radiating element
124、232、532、632、732...輻射感測器124, 232, 532, 632, 732. . . Radiation sensor
220、520...分束單元220, 520. . . Beam splitting unit
222、522...縱向位移單元222, 522. . . Longitudinal displacement unit
224、524...第一參考射束聚焦單元224, 524. . . First reference beam focusing unit
226、728...橫向位移單元226, 728. . . Lateral displacement unit
228、528...第一樣本射束聚焦單元228, 528. . . First sample beam focusing unit
230、530...第二樣本射束聚焦單元230, 530. . . Second sample beam focusing unit
234、534、634、734...目標單元234, 534, 634, 734. . . Target unit
32...輸入射源32. . . Input source
34a~34b...射束34a~34b. . . Beam
36、56、66、76...待測物36, 56, 66, 76. . . Analyte
38a~38b...焦點38a~38b. . . focus
40...樣本聚焦射束40. . . Sample focused beam
526...調變單元526. . . Modulation unit
536...第二參考射束聚焦單元536. . . Second reference beam focusing unit
620、720...輻射反射單元620, 720. . . Radiation reflection unit
622、722...射束處理單元622, 722. . . Beam processing unit
624、724...樣本射束聚焦單元624, 724. . . Sample beam focusing unit
626、726...射束聚焦單元626, 726. . . Beam focusing unit
628...參考射束聚焦單元628. . . Reference beam focusing unit
630、730...參考單元630, 730. . . Reference unit
736...色散單元736. . . Dispersion unit
8、9...干涉成像系統8, 9. . . Interference imaging system
84、94...監測裝置84, 94. . . Monitoring device
800...擴束單元800. . . Expanding unit
840...輻射感測器840. . . Radiation sensor
842...干涉器842. . . Interferometer
844...偵測器844. . . Detector
圖1是本發明實施例提供的干涉成像裝置之方塊圖。FIG. 1 is a block diagram of an interference imaging apparatus according to an embodiment of the present invention.
圖2是本發明實施例提供的干涉成像裝置之細部結構的示意圖。2 is a schematic diagram of a detailed structure of an interference imaging apparatus according to an embodiment of the present invention.
圖3是本發明實施例所提供的分束單元對輸入射源進行分束之示意圖。FIG. 3 is a schematic diagram of splitting an input source by a splitting unit according to an embodiment of the present invention.
圖4為本發明實施例所提供的樣本聚焦射束聚焦在待測物之焦點位置的示意圖。FIG. 4 is a schematic diagram of focusing a sample focus beam on a focus position of an object to be tested according to an embodiment of the present invention.
圖5是本發明另一實施例提供的干涉成像裝置之示意圖。FIG. 5 is a schematic diagram of an interference imaging apparatus according to another embodiment of the present invention.
圖6是本發明另一實施例提供的干涉成像裝置之示意圖。FIG. 6 is a schematic diagram of an interference imaging apparatus according to another embodiment of the present invention.
圖7是本發明另一實施例提供的干涉成像裝置之示意圖。FIG. 7 is a schematic diagram of an interference imaging apparatus according to another embodiment of the present invention.
圖8是本發明實施例提供的干涉成像系統之示意圖。FIG. 8 is a schematic diagram of an interference imaging system according to an embodiment of the present invention.
圖9是本發明另一實施例提供的干涉成像系統之示意圖。FIG. 9 is a schematic diagram of an interference imaging system according to another embodiment of the present invention.
1...干涉成像裝置1. . . Interference imaging device
10...射源裝置10. . . Source device
12...成像裝置12. . . Imaging device
120...參考路徑輻射單元120. . . Reference path radiating element
122...樣本路徑輻射單元122. . . Sample path radiating element
124...輻射感測器124. . . Radiation sensor
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TW100131256A TWI467154B (en) | 2011-08-31 | 2011-08-31 | Interference imaging apparatus and system thereof |
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TW100131256A TWI467154B (en) | 2011-08-31 | 2011-08-31 | Interference imaging apparatus and system thereof |
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TW201310021A true TW201310021A (en) | 2013-03-01 |
TWI467154B TWI467154B (en) | 2015-01-01 |
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JPH04157415A (en) * | 1990-10-20 | 1992-05-29 | Fuji Photo Film Co Ltd | Confocal scanning type interference microscope |
US7482609B2 (en) * | 2005-02-28 | 2009-01-27 | Cymer, Inc. | LPP EUV light source drive laser system |
WO2008093448A1 (en) * | 2007-01-29 | 2008-08-07 | Optical Comb, Inc. | Wavelength scanning light source and optical coherence tomography device |
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