TW201305362A - Palladium or platinum plated copper ribbon having flat square shape for high temperature semiconductor elements - Google Patents

Palladium or platinum plated copper ribbon having flat square shape for high temperature semiconductor elements Download PDF

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TW201305362A
TW201305362A TW100126838A TW100126838A TW201305362A TW 201305362 A TW201305362 A TW 201305362A TW 100126838 A TW100126838 A TW 100126838A TW 100126838 A TW100126838 A TW 100126838A TW 201305362 A TW201305362 A TW 201305362A
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palladium
platinum
copper
bonding
plated
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TW100126838A
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Michitaka Mikami
Shinichiro Nakajima
Hiroshi Matsuo
Kenichi Miyazaki
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Tanaka Electronics Ind
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    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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Abstract

To provide a bonding ribbon connecting the lead between element aluminium pad and substrate of semiconductor in the same at many places, which elevate the ultrasonic bonding property, high conductivity capacity and loop property. The ribbon is constructed by palladium or platinum coating layer over copper core. wherein copper core is made of copper having Vickers hardness lesser than 70 and purity greater than 99.9%, to get conductivity and loop formability for bonding ribbon; To form the fine microcrystal by using magnetron sputter to deposit said palladium or platinum coating over the copper core tape at room temperature. Allow the Vickers hardness of said fine microcrystal be the same as that of core and coating layer to prevent the damage of Al pad, and also elevate the bonding property.

Description

高溫半導體元件用平角狀鍍鈀(Pd)或鉑(Pt)銅帶Flat-angle palladium-plated (Pd) or platinum (Pt) copper tape for high-temperature semiconductor components

本發明係關於一種用於多處同時超音波接合電子零件及半導體元件列接墊，且環套狀地連接的平角狀鍍鈀(Pd)或鉑(Pt)銅帶，且特別有關於一種用於連接鋁墊之功率半導體元件與鍍鎳(Ni)基板側導線部之平角狀鍍鈀或白鈀(Pd)或鉑(Pt)銅帶。BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a flat-angle palladium-plated (Pd) or platinum (Pt) copper tape for use in a plurality of simultaneous ultrasonically bonded electronic components and semiconductor device lands, and is connected in a loop shape, and particularly relates to A palladium-plated or palladium-plated (Pd) or platinum (Pt) copper tape is attached to a power semiconductor element to which an aluminum pad is bonded and a nickel-plated (Ni) substrate-side lead portion.

搭載在半導體元件之接合墊，主要使用由純度99.99%之鋁(Al)金屬或在其中加入0.5～1.2質量%矽(Si)或0.2～0.7質量%銅(Cu)，或者，組合上述元素之Al-Cu-Si等合金所構成的鋁墊。The bonding pad mounted on the semiconductor element is mainly made of aluminum (Al) metal having a purity of 99.99% or 0.5 to 1.2% by mass of cerium (Si) or 0.2 to 0.7% by mass of copper (Cu), or a combination of the above elements. An aluminum pad made of an alloy such as Al-Cu-Si.

又，在鍍鎳(Ni)基板側導線，主要使用藉電鍍及濺鍍形成有鎳(Ni)之銅(Cu)合金或鐵(Fe)合金，或者，搭載有由上述所構成的導線之陶瓷。在藉超音波接合連接前述鋁墊與鍍鎳(Ni)導線架等之時，係使用平角狀銅帶。平角狀銅帶之接合方法，係壓抵超硬工具至銅帶上，藉其負載及超音波震動之能量以接合。施加超音波之效果，係藉用於助長銅帶變形之接合面積擴大，及破壞與去除在銅帶上自然形成之氧化膜，使銅(Cu)等金屬原子於下表面露出，在對向的鋁(Al)第1接合面及鎳(Ni)第2接合面及銅帶表面之界面產生塑性流動，一邊逐漸增加相互密著的新生面，一邊原子間結合兩者。Further, in the nickel-plated (Ni) substrate-side lead wire, a copper (Cu) alloy or an iron (Fe) alloy in which nickel (Ni) is formed by plating and sputtering, or a ceramic in which the above-described wire is formed is mainly used. . When the aluminum pad and the nickel-plated (Ni) lead frame are connected by ultrasonic bonding, a flat-angle copper tape is used. The method of joining the flat-angled copper strip is pressed against the super-hard tool to the copper strip, and is joined by the energy of the load and the ultrasonic vibration. The effect of applying ultrasonic waves is to expand the joint area for promoting the deformation of the copper strip, and to destroy and remove the oxide film naturally formed on the copper strip, so that metal atoms such as copper (Cu) are exposed on the lower surface, in the opposite direction. The interface between the aluminum (Al) first bonding surface and the nickel (Ni) second bonding surface and the surface of the copper tape is plastically flowed, and the newly formed surfaces are gradually increased while being bonded to each other.

此種半導體元件鋁電極墊及與其連接的鍍鎳(Ni)基板側導線，如上所述，材質彼此不同。因此，即使藉由不伴隨冶金性熔融過程之超音波接合，於此等接合界面，因為存在由銅帶表面氧化或硫化而引起的變質層，未必能達成堅固且可靠性高的接合。Such a semiconductor element aluminum electrode pad and a nickel-plated (Ni) substrate-side wire connected thereto are different in material from each other as described above. Therefore, even if the ultrasonic bonding is not accompanied by the metallurgical melting process, the bonding interface due to the oxidation or vulcanization of the surface of the copper strip may not achieve a strong and highly reliable bonding.

此等問題之解決對策，有考慮應用接合引線之楔接合技術。亦即，考慮應用在銅(Cu)極細線上，電鍍0.3μm之鈀(Pd)之接合引線(日本專利實開昭60-160554號公報，下述的專利文獻1)，或者，化學蒸氣沈積0.1μm之鈀(Pd)或鉑(Pt)之接合引線(日本專利特開昭62-097360號公報，下述的專利文獻2)之楔接合技術。或者，針對電鍍0.8μm之鈀(Pd)後的已拉線之接合引線(日本特開2004-014884號公報，下述的專利文獻3)，曾考慮應用楔接合技術。當適用此接合引線技術在焊帶超音波接合時，當為接合引線時，接合一者之半導體元件側之電極係鋁(Al)墊，另一者係導線架等異種金屬，所以，當為焊帶時，亦係對於鋁墊與被覆有鎳(Ni)之電鍍或包層之柯華合金(Kovar)等的導線架，接合鍍鈀(Pd)或鉑(Pt)銅帶之金屬面。For the solution of these problems, there is a wedge bonding technique that considers the application of a bonding wire. In other words, a bonding lead for plating a 0.3 μm palladium (Pd) on a copper (Cu) ultrafine line is considered (Japanese Patent Publication No. Sho 60-160554, the following Patent Document 1), or chemical vapor deposition 0.1. A wedge bonding technique of a bonding lead of palladium (Pd) or platinum (Pt) of μm (Japanese Patent Laid-Open Publication No. SHO 62-097360, the following Patent Document 2). Alternatively, a wedge bonding technique has been considered in the case of a bonding wire having a drawn wire of 0.8 μm of palladium (Pd) (Japanese Patent Laid-Open Publication No. 2004-014884, the following Patent Document 3). When the bonding wire technique is applied to the ultrasonic bonding of the soldering tape, when bonding the wires, the electrodes on the semiconductor element side of one of the electrodes are aluminum (Al) pads, and the other is a dissimilar metal such as a lead frame, so In the case of a solder ribbon, a metal frame of a palladium-plated (Pd) or platinum (Pt) copper tape is bonded to a lead frame of an aluminum pad and a nickel or nickel-plated or coated Kovar.

但是，此被覆銅帶係帶寬度為數百μm～十數mm，帶厚度為1mm以下，比接合引線的厚度及寬度皆大一位數，鈀(Pd)被覆膜或鉑(Pt)被覆膜變厚。當欲直接超音波接合此被覆銅帶至鋁電極墊時，有鋁墊被過度加熱，同時對鋁墊施加過大的按壓力，而有造成鋁墊龜裂之課題。另外，鈀(Pd)或鉑(Pt)與鎳(Ni)之濡濕性甚佳，所以，在導線架側楔接合時，高純度之鈀(Pd)或鉑(Pt)會於鍍鎳(Ni)基板側導線上濡濕擴大，無法於帶寬度內妥善進行第2接合。However, the width of the coated copper tape is from several hundred μm to ten mm, and the thickness of the tape is less than 1 mm, which is a single digit larger than the thickness and width of the bonding lead, and the palladium (Pd) coating or platinum (Pt) is The film becomes thicker. When the coated copper tape is directly ultrasonically bonded to the aluminum electrode pad, the aluminum pad is excessively heated, and at the same time, an excessive pressing force is applied to the aluminum pad, which causes a problem that the aluminum pad is cracked. In addition, palladium (Pd) or platinum (Pt) and nickel (Ni) are very wet, so high-purity palladium (Pd) or platinum (Pt) will be nickel-plated (Ni) when the lead frame is wedge-bonded. The wetness on the substrate-side wires is enlarged, and the second bonding cannot be properly performed within the tape width.

因此，為防止銅(Cu)氧化及硫化，且克服此種第2接合接合部之濡濕擴大，可考慮使鍍鈀(Pd)或鉑(Pt)層變薄。日本專利特開2007-012776號公報(下述的專利文獻3)可視為係對應此種要求之提案，將高導電性之銅(Cu)當作芯材，電鍍鈀(Pd)或鉑(Pt)後，進行拉線及熱處理，使外皮層為0.016μm或0.007μm之接合引線。當使用此發明時，因為使外側的鈀(Pd)變薄，所以，可能可以解決第2接合中的接合性之濡濕擴大課題。又，藉由設置由熱處理而引起的擴散層，可達成利用可靠性較高的超音波接合而得之接合。Therefore, in order to prevent oxidation and vulcanization of copper (Cu) and to overcome the expansion of the second joint joint portion, it is conceivable to reduce the palladium (Pd) or platinum (Pt) layer. Japanese Patent Laid-Open Publication No. 2007-012776 (Patent Document 3 below) can be regarded as a proposal corresponding to such a requirement, and high-conductivity copper (Cu) is used as a core material, and palladium (Pd) or platinum (Pt) is plated. After that, the wire is pulled and heat-treated so that the outer skin layer is a bonding lead of 0.016 μm or 0.007 μm. When this invention is used, since the outer side palladium (Pd) is made thin, it is possible to solve the problem of the wetness expansion of the bondability in the second joining. Moreover, by providing a diffusion layer by heat treatment, bonding by ultrasonic bonding with high reliability can be achieved.

但是，當同時多處超音波接合鍍鈀(Pd)或鉑(Pt)銅帶至鋁墊時，因為外皮層較薄，所以接合時產生的熱，會使接合處之銅(Cu)變形，銅(Cu)加工硬化之影響直接傳遞至鋁電極墊，所以，容易使鋁墊產生龜裂等。又，在電極墊接合界面非常容易產生銅(Cu)及鋁(Al)之金屬間化合物，當在高溫環境下使用時，結果會使接合強度上有離散度。而且，當高溫放置時，自接合界面之空孔等，鋁(Al)氧化膜會增加，接合界面中的鍍鈀(Pd)或鉑(Pt)銅扁之接合強度會喪失，高溫接合可靠性無法說很充分。However, when a plurality of ultrasonically bonded palladium-plated (Pd) or platinum (Pt) copper tapes are bonded to the aluminum pad at the same time, since the outer skin layer is thin, the heat generated at the time of bonding causes the copper (Cu) at the joint to be deformed. The influence of copper (Cu) work hardening is directly transmitted to the aluminum electrode pad, so that the aluminum pad is liable to be cracked or the like. Further, an intermetallic compound of copper (Cu) and aluminum (Al) is easily generated at the electrode pad bonding interface, and when used in a high temperature environment, the bonding strength is dispersed. Moreover, when placed at a high temperature, the aluminum (Al) oxide film increases from the voids in the bonding interface, etc., and the bonding strength of palladium-plated (Pd) or platinum (Pt) copper flat in the bonding interface is lost, and high-temperature bonding reliability is lost. Can't say enough.

而且，使用功率半導體等之高溫半導體元件用鍍鈀(Pd)或鉑(Pt)銅帶之超音波接合，在第1接合後形成環套再進行第2接合，有時視情況仍需進行超過上述數量之複數接合，在最終之接合後以刀具切斷鍍鈀(Pd)或鉑(Pt)銅帶。Further, ultrasonic bonding of a palladium-plated (Pd) or platinum (Pt) copper tape using a high-temperature semiconductor element such as a power semiconductor is performed, and after the first bonding, a loop is formed and then the second bonding is performed, and it may be necessary to exceed the case. The plurality of bonds of the above number are joined, and the palladium-plated (Pd) or platinum (Pt) copper tape is cut by a cutter after the final bonding.

在前述鍍鈀(Pd)或鉑(Pt)銅帶，接合可靠性會成為問題者，係耐熱溫度需要130～175℃之高溫半導體，尤其對空調機、太陽能發電系統、油電車或電動車等之需予採用功率半導體的鍍大容量鈀(Pd)或鉑(Pt)銅帶。例如在被使用於車載用功率半導體中之鍍鈀(Pd)或鉑(Pt)銅帶，最大通常必須能承受150～175℃左右之接合部溫度。於此種高溫環境下，有舉出超音波接合鍍鈀(Pd)或鉑(Pt)銅帶後之高溫氧化課題，而有藉由穩定的皮膜覆蓋於鍍鈀(Pd)或鉑(Pt)銅帶之接合表面，以提高鍍鈀(Pd)或鉑(Pt)銅帶之耐氧化性。In the above-mentioned palladium-plated (Pd) or platinum (Pt) copper tape, the bonding reliability may become a problem, and a high-temperature semiconductor having a heat-resistant temperature of 130 to 175 ° C is required, particularly for an air conditioner, a solar power generation system, a gas electric vehicle, or an electric vehicle. A large-capacity palladium (Pd) or platinum (Pt) copper strip of a power semiconductor is required. For example, in a palladium-plated (Pd) or platinum (Pt) copper tape used in a vehicle-mounted power semiconductor, it is usually necessary to withstand a junction temperature of about 150 to 175 °C. In such a high-temperature environment, there is a problem of high-temperature oxidation after ultrasonically bonding a palladium-plated (Pd) or platinum (Pt) copper strip, and a palladium-plated (Pd) or platinum (Pt) is covered by a stable film. The bonding surface of the copper strip to improve the oxidation resistance of the palladium-plated (Pd) or platinum (Pt) copper strip.

於此種組裝環境下，確保鍍鈀(Pd)或鉑(Pt)銅帶與鋁墊電極部及鍍鎳(Ni)基板側導線之接合強度即為重要的。In such an assembly environment, it is important to ensure the bonding strength between the palladium-plated (Pd) or platinum (Pt) copper tape and the aluminum pad electrode portion and the nickel-plated (Ni) substrate-side wire.

[先行技術文獻][Advanced technical literature]

[專利文獻1]日本實開昭60-160554號公報[Patent Document 1] Japanese Unexamined Publication No. Sho 60-160554

[專利文獻2]日本特開昭62-097360號公報[Patent Document 2] Japanese Laid-Open Patent Publication No. 62-097360

[專利文獻3]日本特開2004-014884號公報[Patent Document 3] Japanese Patent Laid-Open Publication No. 2004-014884

[非專利文獻1]「Aspectroellipsometric investigation of the effect of argon partial pressure on sputtered palladium films」,Briant. Sullivan et al.,3390,J. Vac. Sci. Techol. A 5(6),Nov/Dec 1987,PP3399-3407[Non-Patent Document 1] "Aspectroellipsometric investigation of the effect of argon partial pressure on sputtered palladium films", Briant. Sullivan et al., 3390, J. Vac. Sci. Techol. A 5(6), Nov/Dec 1987, PP3399-3407

本發明係用於解決上述課題，將設有某程度形狀大小之鈀(Pd)或鉑(Pt)被覆層之鍍鈀(Pd)或鉑(Pt)銅帶，在由鋁(Al)金屬或合金所構成的半導體元件墊之第1接合，藉由超音波接合予以接合，自第1接合描畫環套，以於鍍鎳(Ni)基板進行第2接合，藉由多處超音波接合予以接合，即使如此，在第1接合時，鋁墊不會產生龜裂等，在第2接合時，濡濕擴大不會超過帶寬度，能確保充分的接合強度當作本發明之課題。The present invention is for solving the above problems, and a palladium-plated (Pd) or platinum (Pt) copper tape provided with a palladium (Pd) or platinum (Pt) coating layer of a certain size and shape is made of aluminum (Al) metal or The first bonding of the semiconductor element pads formed of the alloy is bonded by ultrasonic bonding, and the ring is drawn from the first bonding to perform the second bonding on the nickel-plated (Ni) substrate, and the bonding is performed by a plurality of ultrasonic bonding. Even in this case, the aluminum pad does not cause cracks or the like during the first joining, and the expansion of the wetness does not exceed the tape width at the time of the second joining, and sufficient joint strength can be secured as a subject of the present invention.

本發明人等係利用使鈀(Pd)或鉑(Pt)被覆層成為細微粒狀結晶組織之方法，作為解決上述課題之技術內容。The inventors of the present invention have a method of solving the above problems by using a method in which a palladium (Pd) or platinum (Pt) coating layer is a fine particle crystal structure.

亦即，一般係在與鋁墊電極部之第1接合中，壓抵多處突出的超硬工具至鍍鈀(Pd)或鉑(Pt)銅帶，使鍍鈀(Pd)或鉑(Pt)銅帶之多處一次超音波接合至鋁墊，但是此時，銅(Cu)芯材狹帶(tape)會變形而產生加工硬化，在鋁墊會產生龜裂等。本發明人等不使鍍鈀(Pd)或鉑(Pt)層與銅(Cu)芯材擴散於銅(Cu)芯材狹帶上，而成予以直接層積的細微粒狀結晶之組織構造，藉此，使外觀上所見的鈀(Pd)或鉑(Pt)被覆層厚度較厚，藉其緩衝效果，減弱銅(Cu)芯材狹帶加工硬化之影響，以在鋁墊不產生龜裂等。又，使於超音波接合時產生的對接合無貢獻之熱，為鈀(Pd)或鉑(Pt)被覆層之粒狀組織所吸收，以使鈀(Pd)或鉑(Pt)被覆層回至塊材(bulk)組織，藉此，加大接合附近之發熱，以減弱銅(Cu)加工硬化之影響。That is, generally, in the first bonding with the aluminum pad electrode portion, the superhard tool protruding from a plurality of places is pushed to a palladium-plated (Pd) or platinum (Pt) copper strip to palladium-plated (Pd) or platinum (Pt). The ultrasonic band is bonded to the aluminum pad at a plurality of times, but at this time, the copper (Cu) core material tape is deformed to cause work hardening, and cracks are generated in the aluminum pad. The inventors of the present invention do not allow a palladium-plated (Pd) or platinum (Pt) layer and a copper (Cu) core material to diffuse on a copper (Cu) core material to form a fine-grained crystal structure directly laminated. Thereby, the thickness of the palladium (Pd) or platinum (Pt) coating layer seen on the outer surface is thicker, and by the buffering effect, the effect of the hardening of the copper (Cu) core material is weakened, so that no turtle is produced on the aluminum pad. Cracked and so on. Further, the heat which does not contribute to the bonding during the ultrasonic bonding is absorbed by the granular structure of the palladium (Pd) or platinum (Pt) coating layer, so that the palladium (Pd) or platinum (Pt) coating layer is returned. To the bulk structure, thereby increasing the heat generation in the vicinity of the joint to weaken the influence of copper (Cu) work hardening.

又，於第2接合雖亦一口氣超音波接合多處之鍍鈀(Pd)或鉑(Pt)銅帶，但是在此情形下，如第1接合般地，鍍鎳(Ni)層並無產生龜裂等之課題。因此，能加大超音波接合之發熱量及超硬工具之加壓力，但是，鈀(Pd)或鉑(Pt)被覆層之厚度實質上較薄，鈀(Pd)或鉑(Pt)被覆層不會濡濕擴大。亦即，本發明鈀(Pd)或鉑(Pt)被覆層之熔出量很少。因此，銅(Cu)芯材之銅(Cu)與鍍鎳(Ni)層之鎳(Ni)予以直接超音波接合，但是，鍍鈀(Pd)或鉑(Pt)層為接合時之負載及超音波所破壞，或者，藉此時之熱而往銅(Cu)芯材內部或被覆層之鎳(Ni)內部擴散，不會使鈀(Pd)或鉑(Pt)被覆層超過帶寬度而擴大濡濕。Further, in the second bonding, a palladium-plated (Pd) or platinum (Pt) copper tape is bonded to a plurality of places in one breath, but in this case, the nickel-plated (Ni) layer is not provided as in the first bonding. There is a problem such as cracking. Therefore, the heat generation of the ultrasonic bonding and the pressing force of the superhard tool can be increased, but the thickness of the palladium (Pd) or platinum (Pt) coating layer is substantially thin, and the palladium (Pd) or platinum (Pt) coating layer Will not damp and expand. That is, the palladium (Pd) or platinum (Pt) coating layer of the present invention has a small amount of melted. Therefore, the copper (Cu) of the copper (Cu) core material and the nickel (Ni) layer of the nickel (Ni) layer are directly ultrasonically bonded, but the palladium plating (Pd) or platinum (Pt) layer is the load at the time of bonding. The ultrasonic wave is destroyed, or, by this heat, diffuses into the interior of the copper (Cu) core material or the nickel (Ni) of the coating layer, so that the palladium (Pd) or platinum (Pt) coating layer does not exceed the tape width. Expand the dampness.

本發明之即使在130～175℃環境下亦可使用之用於半導體的鍍鈀(Pd)或鉑(Pt)帶，係由鈀(Pd)或鉑(Pt)被覆層及銅(Cu)芯材狹帶所構成的平角狀帶，用於藉多處超音波接合以接合由鋁(Al)金屬或合金所構成的半導體元件墊之第1結合及鍍鎳(Ni)基板之第2結合，環套狀地連接第1結合與第2結合之間，其特徵在於：前述銅(Cu)芯材狹帶由具有70Hv以下維氏硬度且純度99.9%以上之(Cu)所製成，前述鈀(Pd)或鉑(Pt)被覆層係在氬氣(Ar)或氦氣(He)等稀有氣體之環境氣體下，在被保持於室溫之前述銅(Cu)芯材狹帶上，磁控管濺鍍50～500nm厚度且純度99.9%以上鈀(Pd)或鉑(Pt)所構成的細微粒狀結晶組織。The palladium-plated (Pd) or platinum (Pt) tape for semiconductors which can be used in the environment of 130 to 175 ° C according to the present invention is a palladium (Pd) or platinum (Pt) coating layer and a copper (Cu) core. A flat-angled belt formed of a material tape for joining a first bond of a semiconductor element pad composed of an aluminum (Al) metal or an alloy and a second bond of a nickel-plated (Ni) substrate by ultrasonic bonding. Between the first bond and the second bond, the copper (Cu) core material tape is made of (Cu) having a Vickers hardness of 70 Hv or less and a purity of 99.9% or more, the palladium. The (Pd) or platinum (Pt) coating layer is placed on the copper (Cu) core material strip held at room temperature under an ambient gas of a rare gas such as argon (Ar) or helium (He). The fine particle-like crystal structure composed of palladium (Pd) or platinum (Pt) having a thickness of 50 to 500 nm and a purity of 99.9% or more is sputtered.

本發明中之鈀(Pd)或鉑(Pt)被覆層，係純度99.9%以上之高純度且經予磁控管濺鍍的，所以，硬度為純度99.99%以上且已實施熱處理的鈀(Pd)或鉑(Pt)塊材硬度(在10公克負載下，皆為50Hv)之3倍左右者(150Hv左右)。The palladium (Pd) or platinum (Pt) coating layer in the present invention is a high purity of 99.9% or more and is sputtered by a magnetron, so that the hardness is 99.99% or more and the heat-treated palladium (Pd) Or the platinum (Pt) block hardness (about 50Hv under 10 gram load) is about 3 times (about 150Hv).

其原因在於：於本發明鍍鈀(Pd)或鉑(Pt)銅帶表面，直接形成的鈀(Pd)或鉑(Pt)被覆層，係由在中介有稀有氣體之低壓條件下，澱積形成的細微多晶組織所構成，所以可被視作積蓄著甚多的內部扭曲變形所致。此扭曲變形之原因在於：起因於鈀(Pd)或鉑(Pt)來源之不純物，或者，起因於真空裝置中殘留的氧或水分等。尤其，在磁控管濺鍍中，對經予濺鍍的鈀(Pd)或鉑(Pt)粒子施加高能量，同時捲入使用之稀有氣體(例如氬氣(Ar))或殘留水分子等，在特定的之條件下，形成緻密且結晶粒較小的多晶膜。此鈀(Pd)或鉑(Pt)被覆層之硬度，係當鈀(Pd)或鉑(Pt)純度為自99.95質量%～99.99質量%時，有純度愈高則其硬度愈低的傾向。The reason for this is that a palladium (Pd) or platinum (Pt) coating layer formed directly on the surface of the palladium-plated (Pd) or platinum (Pt) copper strip of the present invention is deposited by a low pressure condition in which a rare gas is interposed. The fine polycrystalline structure is formed, so it can be regarded as accumulating a lot of internal distortion. The reason for this distortion is that it is caused by impurities derived from palladium (Pd) or platinum (Pt), or oxygen or moisture remaining in the vacuum device. In particular, in magnetron sputtering, high energy is applied to pre-sputtered palladium (Pd) or platinum (Pt) particles, and a rare gas (such as argon (Ar)) or residual water molecules is used. Under certain conditions, a dense polycrystalline film having a small crystal grain is formed. The hardness of the palladium (Pd) or platinum (Pt) coating layer tends to be as low as the purity of palladium (Pd) or platinum (Pt) is from 99.95% by mass to 99.99% by mass.

而且，本發明鍍鈀(Pd)或鉑(Pt)銅帶之鈀(Pd)或鉑(Pt)被覆層，係使用純度99.9%以上之鈀(Pd)或鉑(Pt)(宜為純度99.95%以上，較宜為純度99.99%以上)，所以，與銅(Cu)芯材之銅(Cu)間的接合性亦良好，鈀(Pd)膜或鉑(Pt)膜本身亦緻密且穩定，所以，能防止來自銅(Cu)芯材內部之氧經由鈀(Pd)或鉑(Pt)被覆層，以進入鋁(Al)列接墊之界面，能有效抑制鋁(Al)之氧化。此於組裝後之高溫放置實驗中，即使在鈀(Pd)或鉑(Pt)被覆層往銅(Cu)芯材擴散以消失之處所，在鋁墊之鋁(Al)與銅(Cu)之接合界面處，不會形成新的鋁(Al)氧化物可以得到驗證。Further, the palladium (Pd) or platinum (Pt) coating layer of the palladium-plated (Pd) or platinum (Pt) copper ribbon of the present invention is a palladium (Pd) or platinum (Pt) having a purity of 99.9% or more (preferably 99.95 in purity). % or more, preferably 99.99% or more in purity, so that the bonding property with copper (Cu) of the copper (Cu) core material is also good, and the palladium (Pd) film or the platinum (Pt) film itself is dense and stable. Therefore, it is possible to prevent oxygen from the inside of the copper (Cu) core material from being coated with palladium (Pd) or platinum (Pt) to enter the interface of the aluminum (Al) column pad, and it is possible to effectively suppress oxidation of aluminum (Al). In the high-temperature placement experiment after assembly, even in the palladium (Pd) or platinum (Pt) coating layer diffused to the copper (Cu) core material to disappear, aluminum (Al) and copper (Cu) in the aluminum pad At the joint interface, no new aluminum (Al) oxide can be formed.

對於鈀(Pd)或鉑(Pt)被覆層之上述硬度，藉由使銅(Cu)芯材狹帶在70Hv以下，較宜為60 Hv以下之維氏硬度，在第1接合時，能抑制鋁墊之晶片損壞。又，對於被覆有上述鈀(Pd)或鉑(Pt)之銅(Cu)芯材狹帶之硬度，前述鈀(Pd)或鉑(Pt)被覆層之厚度係50nm~500nm，宜為100 nm~400nm範圍內，藉由使遭受磁控管濺鍍的鈀(Pd)或鉑(Pt)被覆層厚度在上述範圍，銅(Cu)芯材狹帶之硬度能發揮最大效果。The hardness of the palladium (Pd) or platinum (Pt) coating layer is suppressed by a copper (Cu) core material of 70 Hv or less, preferably 60 Hv or less, and can be suppressed at the first bonding. The wafer of the aluminum pad is damaged. Further, for the hardness of the copper (Cu) core material strip coated with the palladium (Pd) or platinum (Pt), the thickness of the palladium (Pd) or platinum (Pt) coating layer is 50 nm to 500 nm, preferably 100 nm. In the range of ~400 nm, the hardness of the copper (Cu) core material can be maximized by making the thickness of the palladium (Pd) or platinum (Pt) coating layer subjected to magnetron sputtering in the above range.

而且，鈀(Pd)或鉑(Pt)被覆層厚度較薄，在上述專利文獻3中被當作最佳範圍之鈀(Pd)或鉑(Pt)被覆膜厚度中，強烈承受作為基底之銅(Cu)芯材狹帶表面性狀之影響，銅(Cu)芯材狹帶加工硬化之影響照原樣傳遞至鋁墊，而鋁墊電極會遭受破壞。Further, the thickness of the palladium (Pd) or platinum (Pt) coating layer is thin, and the thickness of the palladium (Pd) or platinum (Pt) coating film which is regarded as the optimum range in the above Patent Document 3 is strongly endured as the base. The influence of the surface properties of the copper (Cu) core material, the effect of the copper (Cu) core material processing hardening is transmitted to the aluminum pad as it is, and the aluminum pad electrode is damaged.

如此一來，在接合時藉由設置鈀(Pd)或鉑(Pt)被覆層，抑制由銅(Cu)芯材狹帶加工硬化而引起的影響，藉此，防止第1接合中之晶片損壞，同時對於晶片側之鋁墊電極能確保穩定的接合強度。又，第2接合時之銅(Cu)芯材係與鎳(Ni)被覆層直接超音波接合，藉此，確保第2接合之穩定接合強度。In this way, by providing a palladium (Pd) or platinum (Pt) coating layer at the time of bonding, the influence of the copper (Cu) core material processing hardening is suppressed, thereby preventing wafer damage in the first bonding. At the same time, a stable bonding strength can be ensured for the aluminum pad electrode on the wafer side. Further, the copper (Cu) core material at the time of the second bonding is directly ultrasonically bonded to the nickel (Ni) coating layer, thereby ensuring the stable bonding strength of the second bonding.

又，使銅(Cu)芯材狹帶為純度99.9%以上之銅(Cu)～純度99.99%以上之銅(Cu)，或者，提高至純度99.999%以上之銅(Cu)，更能提高上述效果。銅(Cu)之純度或微量添加元素之種類，係對應使用半導體之目的，可以適當選擇。而且如純度99.99%以上之銅(Cu)，甚至純度99.999%以上之銅(Cu)，使用更高純度之銅(Cu)，有減少在環套形成時或第1接合與第2接合中的加工硬化之效果，如果除去成本較高之點，非常適合高溫半導體之用途。又，藉此種高純度化，在環套形成時，即使描繪陡峭的環套，亦較難自接合界面剝離。Further, the copper (Cu) core material can be made of copper (Cu) having a purity of 99.9% or more and copper (Cu) having a purity of 99.99% or more, or copper (Cu) having a purity of 99.999% or more, which can further improve the above. effect. The purity of copper (Cu) or the type of trace addition element is suitable for the purpose of using a semiconductor, and can be appropriately selected. Further, if copper (Cu) having a purity of 99.99% or more, or copper (Cu) having a purity of 99.999% or more, copper of higher purity (Cu) is used, which is reduced in the formation of the collar or in the first bonding and the second bonding. The effect of work hardening is very suitable for high temperature semiconductor applications if the cost is removed. Further, with such a high degree of purity, it is difficult to peel off from the joint interface even when a stable loop is drawn when the loop is formed.

又，本發明高溫半導體元件用平角狀鍍鈀(Pd)或鉑(Pt)銅帶，其係由鈀(Pd)或鉑(Pt)被覆層及銅(Cu)芯材狹帶所構成的平角狀帶，用於藉由多處超音波接合以接合由鋁(Al)金屬或合金所構成的半導體元件墊第1接合及鎳(Ni)被覆基板之第2接合，環套狀連接第1接合與第2接合之間，其特徵在於：前述銅(Cu)芯材狹帶由具有70Hv以下維氏硬度且純度99.9%以上之(Cu)所製成，前述鈀(Pd).或鉑(Pt)被覆層係在稀有氣體的環境氣體下，對於室溫之前述銅(Cu)芯材狹帶進行磁控管濺鍍所形成，其由被導入很多扭曲變形之物件所構成。Further, in the high temperature semiconductor device of the present invention, a flat-angle palladium-plated (Pd) or platinum (Pt) copper tape is used, which is a flat angle composed of a palladium (Pd) or platinum (Pt) coating layer and a copper (Cu) core material tape. The tape is used for joining a semiconductor element pad first joint and a nickel (Ni) coated substrate made of aluminum (Al) metal or alloy by a plurality of ultrasonic bonding, and the first joint is connected in a loop shape. Between the second bonding and the second bonding, the copper (Cu) core material tape is made of (Cu) having a Vickers hardness of 70 Hv or less and a purity of 99.9% or more, the palladium (Pd). or platinum (Pt). The coating layer is formed by magnetron sputtering of the aforementioned copper (Cu) core material strip at room temperature under an ambient gas of a rare gas, which is composed of a plurality of torsionally deformed articles.

為防止鍍鈀(Pd)或鉑(Pt)銅帶內之由鈀(Pd)或鉑(Pt)往銅(Cu)內部擴散所做之鈀(Pd)皮膜或鉑(Pt)皮膜中之扭曲變形消失，在室溫直接磁控管濺鍍形成很有效。又，在環套形成時，即使描繪陡峭的環套，亦能確保純度99.9%以上之高純度鈀(Pd)或鉑(Pt)與純度99.9%以上之高純度銅(Cu)之密著強度，在超音波接合時，該Cu/Pd‧Pt界面不會剝離。To prevent distortion in the palladium (Pd) film or platinum (Pt) film caused by palladium (Pd) or platinum (Pt) diffusion into copper (Cu) in a palladium-plated (Pd) or platinum (Pt) copper band The deformation disappears and direct magnetron sputtering is very effective at room temperature. Moreover, even when a loop is formed, the adhesion strength of high-purity palladium (Pd) or platinum (Pt) having a purity of 99.9% or more and high-purity copper (Cu) having a purity of 99.9% or more can be ensured. The Cu/Pd‧Pt interface does not peel off during ultrasonic bonding.

[發明效果][Effect of the invention]

由本發明所得的鈀(Pd)或鉑(Pt)被覆層之特徵，係純度99.9%以上之高純度，同時維氏硬度為塊材鈀(Pd)或鉑(Pt)硬度之2倍以上，減少銅(Cu)芯材加工硬化之影響。在本發明中，藉由使此種鈀(Pd)或鉑(Pt)被覆層，與軟質的維氏硬度70Hv以下且純度99.9%以上之銅(Cu)直接組合，能發揮作為高溫半導體元件用鍍鈀(Pd)或鉑(Pt)銅帶之功能。The palladium (Pd) or platinum (Pt) coating layer obtained by the present invention is characterized by a high purity of 99.9% or more, and a Vickers hardness of more than twice the hardness of the bulk palladium (Pd) or platinum (Pt). The effect of copper (Cu) core material work hardening. In the present invention, by coating such a palladium (Pd) or platinum (Pt) layer directly with copper (Cu) having a soft Vickers hardness of 70 Hv or less and a purity of 99.9% or more, it can be used as a high-temperature semiconductor element. The function of palladium-plated (Pd) or platinum (Pt) copper tape.

亦即，在藉超硬工具使鍍鈀(Pd)或鉑(Pt)銅帶多處超音波接合至鋁墊以作為第1接合，之後，藉超硬工具使鍍鈀(Pd)或鉑(Pt)銅帶形成環套狀，之後，藉超硬工具使鍍鈀(Pd)或鉑(Pt)銅帶多處超音波接合至鍍鎳(Ni)導線架等以作為第2接合連接之代表性超音波接合步驟中，能抑制第1接合時之晶片龜裂，第1接合時及第2接合時之接合強度參差會減少，能穩定地接合。That is, the super-hard tool is used to ultrasonically bond the palladium-plated (Pd) or platinum (Pt) copper strip to the aluminum pad as the first joint, and then the palladium-plated (Pd) or platinum is made by the superhard tool. Pt) The copper strip is formed into a loop shape, and then a super-hard tool is used to ultrasonically bond a palladium-plated (Pd) or platinum (Pt) copper strip to a nickel-plated (Ni) lead frame or the like as a representative of the second joint connection. In the ultrasonic ultrasonic bonding step, wafer cracking at the time of the first bonding can be suppressed, and the joint strength at the time of the first bonding and the second bonding is reduced, and the bonding can be stably performed.

而且，即使放置已予接合的鍍鈀(Pd)或鉑(Pt)銅帶在高溫環境中，亦能防止氧自鈀(Pd)或鉑(Pt)被覆層表面，進入銅(Cu)芯材狹帶界面。Moreover, even if the palladium-plated (Pd) or platinum (Pt) copper strip placed before bonding is placed in a high temperature environment, oxygen can be prevented from the surface of the palladium (Pd) or platinum (Pt) coating layer and enter the copper (Cu) core material. Narrow interface.

【發明內容】[Summary of the Invention]

於本發明之鍍鈀(Pd)或鉑(Pt)銅帶中，銅(Cu)芯材狹帶之純度宜為99.99%以上。因為能盡量減少環套變形時之加工硬化，加速接合速度，增多每單位時間之連接個數。銅(Cu)芯材狹帶之純度或種類係藉使用的半導體或導線架等而予適當決定，但是，為避免接合時，銅(Cu)芯材狹帶之加工硬化及不純物混入，最好盡量使用99.995%以上之高純度。In the palladium-plated (Pd) or platinum (Pt) copper strip of the present invention, the copper (Cu) core material has a purity of preferably 99.99% or more. Because it can minimize the work hardening when the ring is deformed, accelerate the joint speed and increase the number of connections per unit time. The purity or type of the copper (Cu) core material is determined by the semiconductor or lead frame used, but it is best to avoid the work hardening of the copper (Cu) core tape and the incorporation of impurities during joining. Try to use a high purity of 99.995% or more.

鈀(Pd)或鉑(Pt)被覆層之純度與其為99.9%，倒不如以99.99%為宜。其原因在於：能避免成為晶片損壞原因之鈀(Pd)或鉑(Pt)金屬粒中含有的微量元素析出及凝集於遭受磁控管濺鍍的鈀(Pd)或鉑(Pt)粒子表面，以在鈀(Pd)或鉑(Pt)被覆層局部性形成硬度較高的處所。又，當在長期間且高溫下使用半導體時，能防止鈀(Pd)或鉑(Pt)被覆層，或者，銅(Cu)芯材與半導體元件之鋁墊之接合界面中產生的微量元素堆積或氧化，能確保接合可靠性。The purity of the palladium (Pd) or platinum (Pt) coating layer is 99.9%, which is preferably 99.99%. The reason is that the trace elements contained in the palladium (Pd) or platinum (Pt) metal particles which are the cause of wafer damage can be prevented from being deposited and agglomerated on the surface of palladium (Pd) or platinum (Pt) particles subjected to magnetron sputtering. The place where the hardness is high is locally formed in the palladium (Pd) or platinum (Pt) coating layer. Further, when a semiconductor is used for a long period of time and at a high temperature, a palladium (Pd) or platinum (Pt) coating layer can be prevented, or a trace element deposition occurring in a joint interface between a copper (Cu) core material and an aluminum pad of a semiconductor element can be prevented. Or oxidation to ensure joint reliability.

本發明之鈀(Pd)或鉑(Pt)被覆層之硬度，宜為鈀(Pd)或鉑(Pt)大塊硬度之2倍以上，較宜為3倍以上。因為能避免由接合部中銅(Cu)芯材狹帶之銅(Cu)加工硬化而引起的鋁(Al)墊晶片損壞。The hardness of the palladium (Pd) or platinum (Pt) coating layer of the present invention is preferably 2 times or more, more preferably 3 times or more, the hardness of the palladium (Pd) or platinum (Pt) bulk. This is because aluminum (Al) pad wafer damage caused by copper (Cu) work hardening of the copper (Cu) core strip in the joint can be avoided.

又，純度99.9%以上之鈀(Pd)或鉑(Pt)被覆層，宜為在氬氣(Ar)或氦氣(He)等稀有氣體的環境氣體下，藉由磁控管濺鍍析出者。Further, a palladium (Pd) or platinum (Pt) coating layer having a purity of 99.9% or more is preferably a magnetron sputter precipitated under an atmosphere of a rare gas such as argon (Ar) or helium (He). .

當在銅(Cu)芯材狹帶上被覆鈀(Pd)或鉑(Pt)時，在確保析出的鈀(Pd)或鉑(Pt)純度，膜厚及膜質之均勻性，對芯材狹帶角部分之析出容易性，對銅(Cu)芯材狹帶內面之勻鍍能力(throwing power)等，以化學蒸氣沉積法較磁控管濺鍍法優越。但是，在成為本發明課題之經予形成的鈀(Pd)或鉑(Pt)被覆層需為適度硬質且多晶化而言，則以可導入甚多扭曲變形之磁控管濺鍍較優越，所以，本發明係採用磁控管濺鍍。When palladium (Pd) or platinum (Pt) is coated on a copper (Cu) core material, the purity of the precipitated palladium (Pd) or platinum (Pt), the film thickness and the uniformity of the film quality are ensured, and the core material is narrow. The easiness of precipitation in the angular portion is superior to the magnetron sputtering method in the chemical vapor deposition method for the throwing power of the inner surface of the copper (Cu) core material. However, in the case where the palladium (Pd) or platinum (Pt) coating layer to be formed which is the subject of the present invention needs to be moderately hard and polycrystalline, the magnetron sputtering which can introduce a lot of distortion is superior. Therefore, the present invention employs magnetron sputtering.

又，鈀(Pd)或鉑(Pt)被覆層厚度，自與鍍鎳(Ni)導線架等超音波接合以當作第2接合之觀點，為防止與鎳(Ni)之濡濕擴大，所以，宜為500nm以下。而且，當鈀(Pd)或鉑(Pt)被覆層膜厚未滿50nm時，無法形成細微粒狀之鈀(Pd)或鉑(Pt)結晶組織，其成為第1接合晶片損壞之原因，所以，宜為50nm以上。較宜為100～400nm範圍，在本範圍中，以耐晶片損壞性與被覆膜密著強度之配衡為最優越。Further, the thickness of the palladium (Pd) or platinum (Pt) coating layer is prevented from being expanded by the ultrasonic bonding with a nickel-plated (Ni) lead frame to prevent the wetness of nickel (Ni) from being expanded. It should be 500nm or less. Further, when the film thickness of the palladium (Pd) or platinum (Pt) coating layer is less than 50 nm, fine crystal particles of palladium (Pd) or platinum (Pt) crystal structure cannot be formed, which is a cause of damage of the first bonding wafer. It should be 50nm or more. It is preferably in the range of 100 to 400 nm, and in this range, the balance between the wafer damage resistance and the adhesion strength of the coating film is most excellent.

[實施例1][Example 1]

以下，說明本發明之實施例。Hereinafter, embodiments of the invention will be described.

〈銅(Cu)狹帶之製作〉<Production of Copper (Cu) Tapes>

壓延加工純度99.9質量%之銅(Cu)板材，製作寬2.0mm且厚0.15mm之銅(Cu)狹帶。接著，完全退火已壓延加工的狹帶後，其硬度為維氏硬度70Hv~50Hv。將已完全退火的狹帶當作本發明之銅(Cu)芯材狹帶，使用於實施例試樣編號1~3、40~42與比較例試試樣編號1~3、7~9、13～15。又，純度99.99質量%、純度99.999質量%及純度99.9999質量%之銅(Cu)已平壓延的物件，分別當作本發明之銅(Cu)芯材狹帶，且分別使用於試樣編號4~6、16~18、22～24、28～30、34～36、43～45及試樣編號7~9、46～48，而且將純度99.9999質量%之銅(Cu)已平壓延的物件分別當作實施例試樣編號10~15、19～21、25～27、31～33、37～39、49～54及比較例試樣編號4~6、10～12、16～18。A copper (Cu) plate having a purity of 99.9% by mass was rolled, and a copper (Cu) tape having a width of 2.0 mm and a thickness of 0.15 mm was produced. Next, after completely annealing the calendered tape, the hardness is 70Hv to 50Hv. The fully annealed tape is used as the copper (Cu) core material tape of the present invention, and is used in the sample numbers 1 to 3, 40 to 42 of the embodiment and the test sample numbers 1 to 3 and 7 to 9 in the comparative example. 13 to 15. Further, the copper (Cu) flat rolled article having a purity of 99.99 mass%, a purity of 99.999 mass%, and a purity of 99.9999 mass% is used as the copper (Cu) core material strip of the present invention, respectively, and is used for sample number 4, respectively. ~6, 16~18, 22~24, 28~30, 34~36, 43~45 and sample No. 7~9, 46~48, and the copper (Cu) flat rolled object with a purity of 99.9999% by mass The sample numbers 10 to 15, 19 to 21, 25 to 27, 31 to 33, 37 to 39, and 49 to 54 and the comparative sample numbers 4 to 6, 10 to 12, and 16 to 18 were used as the examples.

又，在此銅(Cu)板材藉由濺鍍使純度99.9質量%且0.5μm之鉑(Pt)箔成膜，製作寬2.0mm且厚0.15 mm之鍍鉑銅(Cu)芯材狹帶。同樣地，在此銅(Cu)板材藉濺鍍使純度99.9質量%且0.5μm之鈀(Pd)箔成膜，製作寬2.0mm且厚0.15 mm之鍍鈀銅(Cu)芯材狹帶。Further, a platinum (Pt) foil having a purity of 99.9% by mass and 0.5 μm was formed by sputtering on the copper (Cu) plate to form a platinum-plated copper (Cu) core tape having a width of 2.0 mm and a thickness of 0.15 mm. Similarly, a palladium (Pd) foil having a purity of 99.9% by mass and a thickness of 0.5 μm was formed by sputtering on the copper (Cu) plate to form a palladium-plated copper (Cu) core tape having a width of 2.0 mm and a thickness of 0.15 mm.

而且，當完全退火純度99.99質量%、純度99.999質量%及純度99.9999質量%之銅(Cu)芯材狹帶時，維氏硬度皆在55～50Hv範圍內。Further, when the copper (Cu) core material having a purity of 99.99% by mass, a purity of 99.999 mass%, and a purity of 99.9999% by mass is completely annealed, the Vickers hardness is in the range of 55 to 50 Hv.

〈鈀(Pd)或鉑(Pt)蒸發源之製作〉<Production of palladium (Pd) or platinum (Pt) evaporation source>

將純度99.9質量%之鈀(Pd)或鉑(Pt)分別當作蒸發源，將純度99.99質量%之鈀(Pd)或鉑(Pt)分別當作蒸發源，而且將純度99.995質量%之鈀(Pd)或鉑(Pt)分別當作蒸發源。此等構成示於表1～表3。。Palladium (Pd) or platinum (Pt) having a purity of 99.9% by mass was used as an evaporation source, respectively, and palladium (Pd) or platinum (Pt) having a purity of 99.99% by mass was used as an evaporation source, and palladium having a purity of 99.995 mass% was obtained. (Pd) or platinum (Pt) are used as evaporation sources, respectively. These compositions are shown in Tables 1 to 3. .

〈鈀(Pd)或鉑(Pt)被覆銅扁帶之製作〉<Preparation of palladium (Pd) or platinum (Pt) coated copper flat ribbon>

流入氬氣至磁控管濺鍍裝置，保持真空度在0.7Pa。Argon gas was flowed into the magnetron sputtering device to maintain a vacuum of 0.7 Pa.

接著，使濺鍍功率為1.0kW，加熱鈀(Pd)或鉑(Pt)蒸發源。蒸發的鈀(Pd)或鉑(Pt)粒子，係以表1～表3所示之既定膜厚被覆於直線距離分離100mm之室溫銅(Cu)芯材狹帶，製作鍍鈀(Pd)或鉑(Pt)銅帶。又，擴散防止層(中間層)係製作如下。在濺鍍裝置內配置成為中間層之純度99.9質量%以上物質X之靶材，與純度99.9質量%以上鈀(Pd)或鉑(Pt)之靶材，以純度99.99質量%以上的氬氣填充，使得濺鍍壓力成為0.7Pa。之後，藉由濺鍍對分離100mm且為室溫狀態之平角狀銅(Cu)芯材狹帶連續進行中間層之鍍膜，形成既定形狀之膜厚。之後，在同一壓力進行鈀(Pd)或鉑(Pt)被覆層之澱積與鍍膜，形成由既定形狀膜厚之緻密結晶組織所構成的層。由於此濺鍍時間短，所以未能觀測到銅(Cu)芯材狹帶之溫度上升。Next, the sputtering power was 1.0 kW, and a palladium (Pd) or platinum (Pt) evaporation source was heated. Evaporated palladium (Pd) or platinum (Pt) particles were coated with a room temperature copper (Cu) core tape of 100 mm in a straight line distance with a predetermined film thickness shown in Tables 1 to 3 to prepare palladium plating (Pd). Or platinum (Pt) copper tape. Further, the diffusion preventing layer (intermediate layer) was produced as follows. A target material having a purity of 99.9% by mass or more of the intermediate layer is disposed in the sputtering apparatus, and a target of palladium (Pd) or platinum (Pt) having a purity of 99.9% by mass or more is filled with argon gas having a purity of 99.99% by mass or more. So that the sputtering pressure becomes 0.7Pa. Thereafter, the flat layer copper (Cu) core material strip separated by 100 mm and at room temperature was continuously subjected to sputtering by sputtering to form a film thickness of a predetermined shape. Thereafter, deposition and plating of a palladium (Pd) or platinum (Pt) coating layer are performed at the same pressure to form a layer composed of a dense crystal structure having a predetermined thickness. Due to the short sputtering time, the temperature rise of the copper (Cu) core strip was not observed.

〈硬度量測〉<hardness measurement>

針對鍍鈀(Pd)或鉑(Pt)銅帶，當以微小維氏硬度計測量已予磁控管濺鍍的膜厚10、5、3μm鈀(Pd)或鉑(Pt)被覆層時，皆為150±20Hv(讀取值)。因此，可知維氏硬度幾乎不因膜厚變化而改變。因此，可知藉由本發明磁控管濺鍍形成的被覆膜，其硬度會顯著地提高，而且即使膜厚較小，亦可維持較高的數值。For a palladium-plated (Pd) or platinum (Pt) copper tape, when a 10, 5, 3 μm palladium (Pd) or platinum (Pt) coating having a magnetron sputtering thickness is measured by a micro Vickers hardness tester, Both are 150±20Hv (read value). Therefore, it can be seen that the Vickers hardness hardly changes due to the change in film thickness. Therefore, it is understood that the hardness of the coating film formed by the sputtering of the magnetron of the present invention is remarkably improved, and even if the film thickness is small, a high value can be maintained.

〈內部組織之量測〉<Measurement of internal organization>

試樣編號2之已調質處理的鍍鈀(Pd)銅帶，以稀薄的硝酸液或王水浸漬數秒鐘。而且，浸漬後的鈀(Pd)膜表面以雷射顯微鏡觀察(第1圖)。相對於此，使作為比較例之與試樣編號2鈀(Pd)相同組成且膜厚為50μm之物件，予以包層壓延加工至純度99.999質量%銅(Cu)板材，所得的鍍鈀(Pd)銅帶與上述同樣浸漬而得鈀(Pd)膜表面，以雷射顯微鏡觀察該鈀(Pd)膜表面(第2圖)。而且，該樣品膜表面之組織放大圖表示於第3圖。The quenched and palladium-plated (Pd) copper strip of sample No. 2 was immersed in a thin nitric acid or aqua regia for several seconds. Further, the surface of the impregnated palladium (Pd) film was observed under a laser microscope (Fig. 1). On the other hand, an article having the same composition as that of the sample No. 2 palladium (Pd) and having a film thickness of 50 μm was subjected to lamination processing to a purity of 99.999 mass% copper (Cu) plate material, and the obtained palladium plating (Pd) was obtained. The copper strip was immersed in the same manner as above to obtain a palladium (Pd) film surface, and the surface of the palladium (Pd) film was observed by a laser microscope (Fig. 2). Further, a magnified view of the surface of the sample film is shown in Fig. 3.

由第1圖～第3圖可知，本發明之磁控管濺鍍膜係鈀(Pd)或鉑(Pt)各晶界區劃成球狀且獨立存在。其係微量元素在鈀(Pd)或鉑(Pt)晶界析出以形成區劃之物件。As can be seen from Fig. 1 to Fig. 3, the magnetron sputtering film of the present invention has a grain boundary of palladium (Pd) or platinum (Pt) which is spherical and independently exists. It is a trace element deposited at the grain boundary of palladium (Pd) or platinum (Pt) to form a partitioned object.

〈接合強度實驗〉<joint strength experiment>

使試樣編號1～13之鈀(Pd)或鉑(Pt)被覆銅扁帶，超音波接合至純度99.99質量%鋁(Al)板(厚度2mm)及已實施5μm鎳(Ni)電鍍之純度99.95質量%銅(Cu)基板(厚度2mm)上。裝置係藉歐索達因公司(Orthodyne Electronics Co.)製全自動扁帶接合機3600R型，以80kHz頻率，關於負載及超音波負載條件，係在崩潰寬度成為1.01～1.05倍之條件下，全部試樣以相同條件，實施超音波接合。又，鍍鈀(Pd)或鉑(Pt)銅帶之環套長度係50mm，環套高度係30mm，設定成與通常條件相比，扁帶或路徑或承受自工具之滑動阻力較大的條件。而且，當各試樣一齊以n=40個超音波接合時，調查接合中發生的引線切斷次數。併記該判定結果於表1～3之接合強度，係藉由鍍鈀(Pd)或鉑(Pt)銅帶側面，以帝吉公司製之DAGE萬能接合測試機PC4000型，實施來自接合部側面之剪切強度測量。Palladium (Pd) or platinum (Pt) coated copper flat ribbons of sample Nos. 1 to 13 were ultrasonically bonded to a purity of 99.99 mass% aluminum (Al) plate (thickness: 2 mm) and purity of 5 μm nickel (Ni) plating was performed. 99.95 mass% copper (Cu) substrate (thickness 2 mm). The device is a fully automatic flat belt bonding machine model 3600R made by Orthodyne Electronics Co., with a frequency of 80 kHz, and the load and ultrasonic load conditions are all in the range of 1.01 to 1.05 times the collapse width. The sample was subjected to ultrasonic bonding under the same conditions. Moreover, the length of the ply-plated (Pd) or platinum (Pt) copper tape is 50 mm, and the height of the ring is 30 mm, which is set to a condition that the flat belt or the path or the sliding resistance of the tool is large compared with the normal conditions. . Further, when each sample was joined by n = 40 ultrasonic waves, the number of wire cuts occurring during the joining was investigated. The results of the determination are shown in Tables 1-3. The bonding strength of the palladium (Pd) or platinum (Pt) copper tape is applied to the side of the joint by the DAGE universal joint tester PC4000 manufactured by Diji Co., Ltd. Shear strength measurement.

〈高溫接合可靠性實驗〉<High Temperature Bonding Reliability Experiment>

針對實施例及比較例之鍍鈀(Pd)或鉑(Pt)銅帶之可靠性實驗，有使接合完成之鍍鎳(Ni)基板曝露175℃x500小時後之剪切強度測量。而且，將可靠性實驗後之強度除實驗實施前之剪切強度所得的數值，定義為可靠性實驗後之強度比，藉此評價。For the reliability experiments of the palladium-plated (Pd) or platinum (Pt) copper strips of the examples and the comparative examples, there was a measurement of the shear strength after the bonded nickel-plated (Ni) substrate was exposed to 175 ° C for 500 hours. Further, the value obtained by dividing the strength after the reliability test from the shear strength before the experiment was defined as the intensity ratio after the reliability test, and was evaluated.

又，判定係依據可靠性實驗後之強度比，可靠性實驗後之強度比為0.9以上者標記雙圓圈(◎)，0.7～0.9者標記單圓圈(○)，未滿0.7者標記打叉(X)。實施例之結果示於表1及表2，比較例之結果示於表3。Further, the judgment is based on the intensity ratio after the reliability test, the intensity ratio after the reliability test is 0.9 or more, and the double circle (?) is marked, the 0.7 to 0.9 mark is a single circle (○), and the mark is less than 0.7 (the mark is crossed) ( X). The results of the examples are shown in Tables 1 and 2, and the results of the comparative examples are shown in Table 3.

由表1～表3可知，鈀(Pd)或鉑(Pt)被覆層之組織與厚度甚為重要，本發明範圍之蒸發源99.9%～99.9999%純度之粒狀組織，且本發明範圍厚度之被覆層者，在第1接合及第2接合中，其接合強度及接合可靠性皆獲得良好的結果。It can be seen from Tables 1 to 3 that the structure and thickness of the palladium (Pd) or platinum (Pt) coating layer are very important, and the evaporation source of the range of the present invention is 99.9% to 99.9999% pure granular structure, and the thickness of the present invention is In the first bonding and the second bonding, both the bonding strength and the bonding reliability were excellent.

相對於此，如比較例試樣編號1～13所示，當即使係與其同等純度之鈀(Pd)或鉑(Pt)被覆層，被覆層之鈀(Pd)或鉑(Pt)厚度超過本發明範圍而較厚(比較例編號7～9及編號10～12)，或者，鈀(Pd)或鉑(Pt)被覆層之厚度較本發明範圍者薄時(試樣編號1～3及編號4～6)，全部接合強度皆不佳，且接合可靠性亦不良。On the other hand, as shown in the comparative example sample Nos. 1 to 13, even if it is a palladium (Pd) or platinum (Pt) coating layer of the same purity, the thickness of the palladium (Pd) or platinum (Pt) of the coating layer exceeds this. Thicker in the scope of the invention (Comparative Examples Nos. 7 to 9 and No. 10 to 12), or when the thickness of the palladium (Pd) or platinum (Pt) coating layer is thinner than the range of the present invention (sample Nos. 1 to 3 and numbering) 4 to 6), all joint strengths are poor, and joint reliability is also poor.

又，鈀(Pd)或鉑(Pt)被覆層之厚度，係硬度或被覆層厚度即使為本發明範圍(200nm、300nm)時，其被覆層並非由磁控管濺鍍所做之物件，且不具備作為本發明特徵之粒狀組織之比較例編號13～18者，係其接合強度很低且接合可靠性明顯不佳。Further, the thickness of the palladium (Pd) or platinum (Pt) coating layer, whether the hardness or the thickness of the coating layer is within the scope of the invention (200 nm, 300 nm), the coating layer is not an object made by magnetron sputtering, and In Comparative Examples Nos. 13 to 18 which do not have the granular structure which is a feature of the present invention, the joint strength is low and the joint reliability is remarkably poor.

[產業上可利用性][Industrial availability]

藉由必需於130～175℃耐熱溫度與大容量之高溫半導體，尤其空調機、太陽能發電系統、油電車或電動車等之功率半導體所採用，可期待於此等新用途中普及，並且對該領域之發展提供貢獻。It is expected to be popular in such new applications by using high-temperature semiconductors having a heat-resistant temperature of 130 to 175 ° C and a large capacity, in particular, power semiconductors such as air conditioners, solar power generation systems, oil-electric vehicles, and electric vehicles. Contribution to the development of the field.

1．．．鍍鈀(Pd)或鉑(Pt)銅帶1. . . Palladium-plated (Pd) or platinum (Pt) copper strip

2．．．鍍金層2. . . Gold plating

3．．．銅芯材3. . . Copper core material

4．．．鋁墊4. . . Aluminum pad

5．．．導腳5. . . Guide pin

第一圖係本發明之鍍鈀(Pd)銅帶之自鍍鈀(Pd)層上方所見的組織照片。The first figure is a photograph of the structure seen above the palladium-plated (Pd) layer of the palladium-plated (Pd) copper strip of the present invention.

第二圖係比較例之鈀(Pd)層組織照片。The second figure is a photomicrograph of the palladium (Pd) layer of the comparative example.

第三圖係本發明之鍍鈀(Pd)銅帶之自鍍鈀(Pd)層上方所見的放大組織照片(平均粒徑：0.05～0.3μm)。The third graph is a magnified texture photograph (average particle diameter: 0.05 to 0.3 μm) seen from the palladium-plated (Pd) layer of the palladium-plated (Pd) copper strip of the present invention.

第四圖係鍍鈀(Pd)或鉑(Pt)銅帶之剖面圖。The fourth figure is a cross-sectional view of a palladium-plated (Pd) or platinum (Pt) copper strip.

第五圖係表示以先前的鈀(Pd)或鉑(Pt)包層帶，藉由超音波接合連接半導體元件墊與導線架後的狀態之圖面。The fifth figure shows a state in which a conventional palladium (Pd) or platinum (Pt) cladding tape is bonded to a semiconductor element pad and a lead frame by ultrasonic bonding.

濺鍍Sputtering

(鍍膜厚度：10μm)(coating thickness: 10μm)

雷射顯微鏡：物鏡×150Laser microscope: objective lens × 150

Claims (8)

一種高溫半導體元件用平角狀鍍鈀(Pd)或鉑(Pt)銅帶，其係由鈀(Pd)或鉑(Pt)被覆層及銅(Cu)芯材狹帶所構成的平角狀扁帶，用於藉多處超音波接合以接合由鋁(Al)金屬或合金所構成的半導體元件墊第1接合及鍍鎳(Ni)基板之第2接合，環套狀地連接第1接合與第2接合之間，其特徵在於：前述銅(Cu)芯材狹帶由具有70Hv以下維氏硬度且純度99.9%以上之(Cu)所製成，前述鈀(Pd)或鉑(Pt)被覆層係在氬氣(Ar)等稀有氣體的環境氣體下，在被保持於室溫之前述銅(Cu)芯材狹帶上，磁控管濺鍍50～500nm厚度之純度99.9%以上鈀(Pd)或鉑(Pt)所構成的細微粒狀結晶組織。A flat-angle palladium-plated (Pd) or platinum (Pt) copper tape for a high-temperature semiconductor device, which is a flat-angled flat ribbon composed of a palladium (Pd) or platinum (Pt) coating layer and a copper (Cu) core material tape a second bonding of a semiconductor device pad composed of an aluminum (Al) metal or an alloy and a second bonding of a nickel-plated (Ni) substrate by a plurality of ultrasonic bonding, and connecting the first bonding and the first bonding in a loop shape Between the two joints, the copper (Cu) core material tape is made of (Cu) having a Vickers hardness of 70 Hv or less and a purity of 99.9% or more, and the palladium (Pd) or platinum (Pt) coating layer. Under the ambient gas of a rare gas such as argon (Ar), the magnetron is sputtered with a purity of 99.9% or more of palladium (Pd) at a thickness of 50 to 500 nm on the copper (Cu) core material ribbon maintained at room temperature. Or a fine particulate crystal structure composed of platinum (Pt). 如申請專利範圍第1項所述之高溫半導體元件用平角狀鍍鈀(Pd)或鉑(Pt)銅帶，其中前述粒狀結晶組織自上方觀之，每1μm具有10～100個。A flat-angle palladium-plated (Pd) or platinum (Pt) copper tape for a high-temperature semiconductor device according to the first aspect of the invention, wherein the granular crystal structure has 10 to 100 per 1 μm as viewed from above. 如申請專利範圍第1項所述之高溫半導體元件用平角狀鍍鈀(Pd)或鉑(Pt)銅帶，其中前述粒狀結晶組織自上方觀之，每1μm具有10～50個。A flat-angle palladium-plated (Pd) or platinum (Pt) copper tape for a high-temperature semiconductor device according to the first aspect of the invention, wherein the granular crystal structure has 10 to 50 per 1 μm as viewed from above. 如申請專利範圍第1項所述之高溫半導體元件用平角狀鈀(Pd)或鉑(Pt)被覆銅扁帶，其中前述銅(Cu)芯材狹帶之純度係99.9以上。A flat-angled palladium (Pd) or platinum (Pt) coated copper flat tape for a high temperature semiconductor device according to claim 1, wherein the copper (Cu) core material has a purity of 99.9 or more. 如申請專利範圍第1項所述之高溫半導體元件用平角狀鍍鈀(Pd)或鉑(Pt)銅帶，其中前述鈀(Pd)或鉑(Pt)被覆層之純度係99.99以上。A palladium-plated (Pd) or platinum (Pt) copper tape for a high-temperature semiconductor device according to the first aspect of the invention, wherein the palladium (Pd) or platinum (Pt) coating layer has a purity of 99.99 or more. 如申請專利範圍第1項所述之高溫半導體元件用平角狀鍍鈀(Pd)或鉑(Pt)銅扁帶，其中前述鈀(Pd)或鉑(Pt)被覆層之純度係99.995以上。A flat-angle palladium-plated (Pd) or platinum (Pt) copper flat ribbon for a high-temperature semiconductor device according to claim 1, wherein the palladium (Pd) or platinum (Pt) coating layer has a purity of 99.995 or more. 如申請專利範圍第1項所述之高溫半導體元件用平角狀鍍鈀(Pd)或鉑(Pt)銅扁帶，其中前述鍍鈀(Pd)或鉑(Pt)銅帶之形狀係寬0.5～10mm且厚0.05～1mm。A flat-angle palladium-plated (Pd) or platinum (Pt) copper flat ribbon for a high-temperature semiconductor device according to the first aspect of the invention, wherein the palladium-plated (Pd) or platinum (Pt) copper strip has a shape width of 0.5 to 0.5. 10mm and 0.05~1mm thick. 如申請專利範圍第1項所述之高溫半導體元件用平角狀鍍鈀(Pd)或鉑(Pt)銅帶，其中前述半導體元件墊係含有0.5～1.5質量%矽(Si)或0.2～0.7質量%銅(Cu)之鋁(Al)合金。A flat-angle palladium-plated (Pd) or platinum (Pt) copper tape for a high-temperature semiconductor device according to claim 1, wherein the semiconductor device pad contains 0.5 to 1.5% by mass of bismuth (Si) or 0.2 to 0.7 mass. % copper (Cu) aluminum (Al) alloy.
TW100126838A 2011-07-28 2011-07-28 Palladium or platinum plated copper ribbon having flat square shape for high temperature semiconductor elements TW201305362A (en)

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