TW201304087A - Rapid temperature change system - Google Patents
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本發明係關於一種高速溫度變更系統，其變更將半導體晶圓等基板加熱之烤板之溫度。The present invention relates to a high-speed temperature changing system that changes the temperature of a baking sheet that heats a substrate such as a semiconductor wafer.
半導體處理技術用於各種半導體裝置或系統之製造。一種半導體處理技術，係將半導體晶圓等基板載置於平板上進行處理。如此之處理中包含化學處理、電漿誘導處理、蝕刻處理、蒸鍍處理等。一般該等諸多處理係依存於溫度者，且在處理中進行基板之加熱及冷卻。例如，於專利文獻1揭示有將基板載置於平板上進行加熱及冷卻之技術。Semiconductor processing techniques are used in the fabrication of various semiconductor devices or systems. A semiconductor processing technique in which a substrate such as a semiconductor wafer is placed on a flat plate for processing. Such treatment includes chemical treatment, plasma induction treatment, etching treatment, vapor deposition treatment, and the like. Generally, many of these processes depend on the temperature, and the substrate is heated and cooled during processing. For example, Patent Document 1 discloses a technique in which a substrate is placed on a flat plate for heating and cooling.
[專利文獻1]日本特開2008-141163號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-141163
為提高半導體處理之產能，期望縮短基板之加熱及/或冷卻之同時，亦以短時間進行平板等裝置之溫度變更。In order to increase the productivity of semiconductor processing, it is desirable to shorten the heating and/or cooling of the substrate, and also to change the temperature of the device such as a flat plate in a short time.
本發明係鑑於上述問題而完成者，其目的在於提供一種可縮短烤板部之溫度變更所需之時間之溫度變更系統。The present invention has been made in view of the above problems, and an object thereof is to provide a temperature changing system capable of shortening a time required for temperature change of a baking sheet portion.
為解決上述問題，技術方案1之發明為一種溫度變更系統，其特徵在於具備：烤板部，其具備熱擴散部、連結於前述熱擴散部之加熱器基台、及連結於前述加熱器基台之加熱器層；被動冷卻機構，其係具備冷卻板及連結於前述冷卻板之熱墊，且配置於靠近前述烤板部；及主動冷卻機構，其配置於靠近前述被動冷卻機構；且前述被動冷卻機構可移動成與前述加熱器層物理性接觸，且可移動成與前述主動冷卻機構物理性接觸。In order to solve the above problems, the invention of claim 1 is a temperature change system including: a baking plate portion including a heat diffusion portion, a heater base coupled to the heat diffusion portion, and a heater base a heater layer; a passive cooling mechanism comprising a cooling plate and a heat pad coupled to the cooling plate, disposed adjacent to the baking plate portion; and an active cooling mechanism disposed adjacent to the passive cooling mechanism; The passive cooling mechanism is movable into physical contact with the aforementioned heater layer and is movable into physical contact with the aforementioned active cooling mechanism.
又，技術方案2之發明，其係技術方案1之發明之溫度變更系統，其特徵在於前述烤板部進一步具備連結於前述熱擴散部之吸附墊。According to a second aspect of the invention, in the temperature change system of the invention of the first aspect, the baking sheet portion further includes an adsorption pad connected to the heat diffusion portion.
又，技術方案3之發明，其係技術方案2之發明之溫度變更系統，其特徵在於前述吸附墊係藉由真空吸附連結於前述熱擴散部。According to a third aspect of the invention, in the temperature change system of the invention of claim 2, the adsorption pad is connected to the thermal diffusion portion by vacuum adsorption.
又，技術方案4之發明，其係技術方案1之發明之溫度變更系統，其特徵在於前述熱擴散部具備至少含有銅或鋁之厚度5 mm以上、10 mm以下之平板。According to a fourth aspect of the invention, in the temperature change system of the invention of the first aspect, the heat diffusion portion includes a flat plate having a thickness of at least 5 mm or more and 10 mm or less of copper or aluminum.
又，技術方案5之發明，其係技術方案1之發明之溫度變更系統，其特徵在於前述加熱器基台具備含有氧化鋁之厚度2 mm以上、5 mm以下之平板。Further, the invention according to the invention of claim 1 is characterized in that the heater base includes a flat plate having a thickness of alumina of 2 mm or more and 5 mm or less.
又，技術方案6之發明，其係技術方案1之發明之溫度變更系統，其特徵在於進一步具備烤板真空吸附機構，且使用前述烤板真空吸附機構連結前述熱擴散部與前述加熱器基台。According to a sixth aspect of the invention, in the temperature change system of the invention of the first aspect of the invention, the present invention further includes a baking sheet vacuum suction mechanism, and the heat spreader and the heater base are connected by the baking sheet vacuum suction mechanism .
又，技術方案7之發明，其係技術方案1之發明之溫度變更系統，其特徵在於前述熱墊係藉由真空吸附連結於前述冷卻板。According to a seventh aspect of the invention, in the temperature changing system of the invention of claim 1, the heat pad is connected to the cooling plate by vacuum suction.
又，技術方案8之發明，其係技術方案1之發明之溫度變更系統，其特徵在於前述熱墊係使用結合材連結於前述冷卻板。According to a still further aspect of the invention, the temperature change system of the invention of claim 1 is characterized in that the heat pad is coupled to the cooling plate by using a bonding material.
又，技術方案9之發明，其係技術方案1之發明之溫度變更系統，其特徵在於前述被動冷卻機構配置於前述主動冷卻機構與前述烤板部之間。According to a second aspect of the invention, in the temperature change system of the invention of the first aspect, the passive cooling mechanism is disposed between the active cooling mechanism and the baking sheet portion.
又，技術方案10之發明，其係技術方案1之發明之溫度變更系統，其特徵在於前述加熱器層具備複數個獨立受控制之區域。According to a tenth aspect of the invention, in the temperature change system of the invention of claim 1, the heater layer includes a plurality of independently controlled regions.
又，技術方案11之發明，其係技術方案10之發明之溫度變更系統，其特徵在於前述複數個獨立受控制之區域中之一個區域與其他之區域重疊。Further, the invention of claim 11 is the temperature change system of the invention of claim 10, characterized in that the one of the plurality of independently controlled regions overlaps with the other regions.
又，技術方案12之發明，其係技術方案11之發明之溫度變更系統，其特徵在於前述複數個獨立受控制之區域中之前述一個區域之熱輸出大於前述其他區域。Further, the invention of claim 12 is the temperature change system of the invention of claim 11, characterized in that the heat output of the one of the plurality of independently controlled regions is larger than the other regions.
根據本發明，可於短時間內，實現將基板加熱裝置(例如，烤板部)之溫度從第1設定溫度升溫或降溫至第2設定溫度之高速溫度變更(RTC：Rapid temperature change)。例如，進行±50°之溫度變更所需之時間可為小於1分鐘。According to the present invention, it is possible to realize a rapid temperature change (RTC: Rapid Temperature Change) in which the temperature of the substrate heating device (for example, the baking sheet portion) is raised or lowered from the first set temperature to the second set temperature in a short time. For example, the time required to make a temperature change of ±50° may be less than 1 minute.
又，根據本發明，可提供一種高速溫度變更系統。本發明之高速溫度變更系統具備：烤板部，其具備熱擴散部、連結於前述熱擴散部之加熱器基台、及連結於前述加熱器基台之加熱器層；被動冷卻機構，其具備冷卻板及連結於前述冷卻板之熱墊，且配置於靠近前述烤板部；及主動冷卻機構，其配置於靠近前述被動冷卻機構；且前述被動冷卻機構可移動成與前述加熱器層物理性接觸，且可移動成與前述主動冷卻機構物理性接觸。Further, according to the present invention, a high speed temperature changing system can be provided. The high-speed temperature changing system of the present invention includes a baking sheet portion including a heat diffusion portion, a heater base connected to the heat diffusion portion, and a heater layer connected to the heater base; and a passive cooling mechanism having a cooling plate and a heat pad coupled to the cooling plate, disposed adjacent to the baking plate portion; and an active cooling mechanism disposed adjacent to the passive cooling mechanism; and the passive cooling mechanism is movable to be physically compatible with the heater layer Contacted and movable into physical contact with the aforementioned active cooling mechanism.
根據本發明，可獲得很多之優點。作為如此之優點，可使被動冷卻機構與加熱器層之間之熱接觸均一化，同時可減輕對加熱器層所造成之機械衝擊。又，可以使被動冷卻機構與主動冷卻機構以高速熱接觸，從而可減少冷卻水溫度之影響而降低熱之不均一性。進而，可減少電子布線等，使烤板部之組裝變得容易。According to the present invention, many advantages are obtained. As a result of this, the thermal contact between the passive cooling mechanism and the heater layer can be made uniform, and the mechanical impact on the heater layer can be alleviated. Moreover, the passive cooling mechanism and the active cooling mechanism can be in thermal contact at a high speed, thereby reducing the influence of the temperature of the cooling water and reducing the heat non-uniformity. Further, it is possible to reduce the number of electronic wirings and the like, and to facilitate assembly of the baking sheet portion.
以下，一面參照圖式，一面更詳細地說明帶有很多優點及特徵之本發明之實施形態。Hereinafter, embodiments of the present invention having many advantages and features will be described in more detail with reference to the drawings.
圖1係顯示基板之溫度變化之圖。如圖1所示，基板之中央部之冷卻速度較端緣部或中間部慢。只要為具備複數個區域之多區域烤板，則每個區域可以不同之冷卻速度進行冷卻。因為烤板之底部之平坦度或如何處理烤板之冷卻所使用之熱，不同之區域之溫度顯示有不同之降溫行為。因此，就某一區域，溫度控制器必須增加功率，以超越設定溫度而降溫至該設定溫度以下。又，就其他區域，溫度控制器必須使功率更低，以緩慢地降溫至設定溫度。根據本發明，可減輕如此複雜之溫度控制之負擔。以下，詳細地說明本發明之高速溫度變更(RTC：Rapid temperature change)系統。Figure 1 is a graph showing changes in temperature of a substrate. As shown in Fig. 1, the cooling rate of the central portion of the substrate is slower than the edge portion or the intermediate portion. As long as it is a multi-zone baking sheet with a plurality of zones, each zone can be cooled at different cooling rates. Because of the flatness of the bottom of the baking sheet or how to handle the heat used to cool the baking sheet, temperatures in different areas show different cooling behaviors. Therefore, in a certain area, the temperature controller must increase the power to cool below the set temperature beyond the set temperature. Also, in other areas, the temperature controller must make the power lower to slowly cool down to the set temperature. According to the present invention, the burden of such complicated temperature control can be alleviated. Hereinafter, the high temperature temperature change (RTC) system of the present invention will be described in detail.
圖2係顯示本發明之高速溫度變更系統之概略構成之圖。該高速溫度變更系統具備烤板部205及冷卻板部207，且可在短時間內高速溫度變更烤板部205之溫度。熱墊210為具有烤板部205與冷卻板部207之間之柔軟性之層，具有增加該等之間之熱傳導之均一性之功能。作為熱墊210，可使用例如3M製之製品型號「5506S」之熱傳導墊。熱墊210之厚度設為例如0.5 mm~2 mm即可。Fig. 2 is a view showing a schematic configuration of a high-speed temperature changing system of the present invention. This high-speed temperature changing system includes a baking plate portion 205 and a cooling plate portion 207, and can change the temperature of the baking plate portion 205 at a high-speed temperature in a short time. The thermal pad 210 is a layer having flexibility between the baking plate portion 205 and the cooling plate portion 207, and has a function of increasing the uniformity of heat conduction between the two. As the thermal pad 210, for example, a thermal conductive pad of the product model "5506S" manufactured by 3M can be used. The thickness of the thermal pad 210 can be set, for example, to 0.5 mm to 2 mm.
烤板部205具備真空吸附於熱擴散部222之吸附墊220。亦可於吸附墊220之上面設置接近測針。從真空源225經由烤板用真空吸附機構232對熱擴散部222給予負壓。在圖2中，簡略地描繪有真空吸附機構，作為如此之機構可研究各種之組合。即，可單獨或組合使用1個或複數個真空系統。例如，可僅採用用以將熱墊210吸附於被動冷卻板240之冷卻板用真空吸附機構230。又，在其他例中，可與使熱墊210平坦之吸附機構及/或基板吸附機構組合來使用冷卻板用真空吸附機構230。再者，在其他例中，如本實施形態，可將該等之真空吸附機構與烤板用真空吸附機構232組合使用。關於該等，只要為當業者，均可理解各種之變化或變更。The baking plate portion 205 includes a suction pad 220 that is vacuum-adsorbed to the heat diffusion portion 222. A proximity stylus can also be placed on the top of the adsorption pad 220. The heat diffusion portion 222 is given a negative pressure from the vacuum source 225 via the vacuum suction mechanism 232. In Fig. 2, a vacuum suction mechanism is schematically depicted, and as such a mechanism, various combinations can be studied. That is, one or a plurality of vacuum systems may be used singly or in combination. For example, only the vacuum suction mechanism 230 for cooling the plate for adsorbing the thermal pad 210 to the passive cooling plate 240 may be employed. Further, in another example, the vacuum suction mechanism 230 for the cooling plate may be used in combination with the adsorption mechanism and/or the substrate adsorption mechanism that flatten the thermal pad 210. Further, in another example, as in the present embodiment, the vacuum suction mechanism and the vacuum suction mechanism 232 for baking sheets may be used in combination. Regarding such, any change or change can be understood as long as it is a practitioner.
熱擴散部222給予吸附墊220與加熱器層224之間高熱傳導性。加熱器層224具備7個區域加熱器與1個中間加熱器。關於如此之於複數個區域之各者均設置有加熱器之多區域烤板，可適用例如美國專利第7427728號說明書記載之技術。在本實施形態中，於獨立受控制之7個普通區域重疊中間區域而構成加熱器層224。於7個普通區域之各者個別設置區域加熱器。於中間區域設置中間加熱器。複數個普通區域及中間區域分別個別獨立受控制。又，中間區域熱輸出大於其他之普通區域。本實施形態中之加熱器層224之普通區域數典型為7個，但亦可不限定於此，亦可為例如6個。在某一例中，作為7個普通區域，包含1個中央區域、4個周邊區域及包圍該中央區域之2個中間區域。又，在其他例中，亦可將2個中間區域作為包圍中央區域之2個同心圓。The heat diffusion portion 222 imparts high thermal conductivity between the adsorption pad 220 and the heater layer 224. The heater layer 224 is provided with seven area heaters and one intermediate heater. A multi-zone baking sheet provided with a heater for each of the plurality of regions is applicable to, for example, the technique described in the specification of U.S. Patent No. 7,427,728. In the present embodiment, the heater layer 224 is formed by overlapping the intermediate regions in seven normal regions that are independently controlled. The area heaters are individually set in each of the seven common areas. Set the intermediate heater in the middle area. A plurality of normal areas and intermediate areas are individually controlled individually. Also, the intermediate area heat output is larger than other common areas. The number of common regions of the heater layer 224 in the present embodiment is typically seven, but it is not limited thereto, and may be, for example, six. In one example, the seven common areas include one central area, four peripheral areas, and two intermediate areas surrounding the central area. Further, in another example, two intermediate regions may be used as two concentric circles surrounding the central region.
熱擴散部222為以具有高熱傳導率之適宜材料(例如，鋁(Al)、銅(Cu)等)所形成之平板，且至少包含鋁或銅任意一者。加熱器基台226為被夾於熱擴散部222與加熱器層224之間之平板。加熱器基台226機械性支撐烤板部205。因此，加熱器基台226較佳為含有具有高強度之材料(例如，氧化鋁(Al2O3)、碳化矽(SiC)等)。例如，鋁從熱傳導之觀點來看為良好之材料，但缺乏強度。另一方面，氧化鋁(Al2O3)雖具有高強度但熱傳導率低。在本實施形態中，利用該等兩者材料之長處，以鋁等形成熱擴散部222給予高熱傳導率之同時，以氧化鋁形成加熱器基台226賦予高強度。The heat diffusion portion 222 is a flat plate formed of a suitable material having a high thermal conductivity (for example, aluminum (Al), copper (Cu), or the like), and contains at least one of aluminum or copper. The heater base 226 is a flat plate sandwiched between the heat diffusion portion 222 and the heater layer 224. The heater base 226 mechanically supports the grill portion 205. Therefore, the heater base 226 preferably contains a material having high strength (for example, alumina (Al 2 O 3 ), tantalum carbide (SiC), etc.). For example, aluminum is a good material from the viewpoint of heat conduction, but lacks strength. On the other hand, alumina (Al 2 O 3 ) has high strength but low thermal conductivity. In the present embodiment, the heat diffusion portion 222 is formed of aluminum or the like to impart high thermal conductivity by utilizing the advantages of the materials, and the heater base 226 is formed of alumina to impart high strength.
加熱器基台226之厚度以較薄為佳，以便儘管為低熱傳導率，但仍可以較高速進行溫度變更。同時，加熱器基台226之強度必須為充分確保機械性剛度者。例如，使用KAPTON(註冊商標)等之聚醯亞胺薄膜，作為吸附墊220之材質。又，典型的是，使用遮罩技術及蝕刻技術於上面形成有接近測針之吸附墊220之初始厚度為100 μm。The thickness of the heater base 226 is preferably thinner so that the temperature change can be performed at a higher speed despite the low thermal conductivity. At the same time, the strength of the heater base 226 must be sufficient to ensure mechanical rigidity. For example, a polyimide film of KAPTON (registered trademark) or the like is used as the material of the adsorption pad 220. Further, it is typical that the initial thickness of the adsorption pad 220 on which the proximity stylus is formed using the mask technique and the etching technique is 100 μm.
典型的是，板狀之熱擴散部222之厚度設為5 mm以上10 mm以下(例如，6 mm)即可。又，典型的是，板狀之加熱器基台226之厚度設為2 mm以上5 mm以下即可。其結果，烤板部205整體之厚度為10 mm左右。Typically, the thickness of the plate-shaped heat diffusion portion 222 is set to be 5 mm or more and 10 mm or less (for example, 6 mm). Moreover, it is typical that the thickness of the plate-shaped heater base 226 is 2 mm or more and 5 mm or less. As a result, the thickness of the entire baking sheet portion 205 is about 10 mm.
若對半導體處理之容許度變大，則會使到達新的設定溫度所需之時間變短。為將烤板加熱至設定溫度，限定從多區域烤板之複數個區域供給之輸出。為使區域間之變動縮小，精密地控制各區域為佳。在本實施形態中，為使烤板之溫度急速上升，對全部區域設置有可使溫度上升增加之中間區域。中間區域係與複數個普通區域重疊配置，全部與普通區域同時進行加熱。如此，藉由設置中間區域，可一面精密地控制各區域，一面急速加熱烤板之整體。If the tolerance for semiconductor processing becomes large, the time required to reach the new set temperature is shortened. To heat the baking sheet to a set temperature, the output supplied from a plurality of zones of the multi-zone baking sheet is defined. In order to reduce the variation between regions, it is better to precisely control each region. In the present embodiment, in order to rapidly increase the temperature of the baking sheet, an intermediate portion in which the temperature rise can be increased is provided in all the regions. The intermediate area is overlapped with a plurality of common areas, and all are heated simultaneously with the normal area. In this way, by providing the intermediate portion, it is possible to precisely control the respective regions while rapidly heating the entire baking sheet.
參照圖2，冷卻板部207之被動RTC板(被動冷卻板)240沿著垂直方向，可升降移動地連接於氣缸248。亦可使用除使被動冷卻板升降移動以外其他之機構。於被動冷卻板240之最上部設置有熱墊210，經由其可使構成烤板部205之底部之加熱器層224與被動冷卻板240接觸。如此被動冷卻板240之構成為可於上下移動，與烤板部205熱接觸。被動冷卻板240可使用鍍有鋁或鎳之銅合金製作，其厚度為大約10 mm。Referring to Fig. 2, the passive RTC board (passive cooling plate) 240 of the cooling plate portion 207 is connected to the cylinder 248 so as to be movable up and down in the vertical direction. It is also possible to use a mechanism other than moving the passive cooling plate up and down. A heat pad 210 is disposed at the uppermost portion of the passive cooling plate 240, through which the heater layer 224 constituting the bottom of the baking sheet portion 205 is brought into contact with the passive cooling plate 240. The passive cooling plate 240 is configured to be movable up and down and in thermal contact with the baking sheet portion 205. The passive cooling plate 240 can be made of a copper alloy plated with aluminum or nickel and has a thickness of about 10 mm.
關於如此之被動冷卻板240接觸於烤板部205所引起之熱移動，可使用例如美國專利第7274005號說明書記載之技術。即，經冷卻之被動冷卻板240藉由氣缸248上升，且構成烤板部205之底部之加熱器層224與熱墊210接觸，藉此，烤板部205之熱經由熱墊210傳導至被動冷卻板240，從而烤板部205之溫度急速降低。Regarding the thermal movement caused by the passive cooling plate 240 contacting the baking sheet portion 205, for example, the technique described in the specification of U.S. Patent No. 7,274,005 can be used. That is, the cooled passive cooling plate 240 is raised by the cylinder 248, and the heater layer 224 constituting the bottom of the baking plate portion 205 is in contact with the heat pad 210, whereby the heat of the baking plate portion 205 is conducted to the passive via the heat pad 210. The plate 240 is cooled so that the temperature of the baking plate portion 205 is rapidly lowered.
在若干個階段設置有真空吸附機構，以提高系統之各要素間(包含基板201、烤板部205之要素及冷卻板部207之要素)之熱傳導，且增加熱接觸之表面平坦度。烤板用真空吸附機構232係用於對熱擴散部222與加熱器基台226之間連續給予負壓而設置。因為烤板用真空吸附機構232給予負壓，可藉由真空吸附連結熱擴散部222與加熱器基台226。又，可藉由真空吸附改善烤板部205之要素之平坦度，同時亦可提高烤板部205與被動冷卻板240之間之平坦度及/或熱傳導率。其結果，在不同之區域間之熱傳導之程度之差異較圖1所示之例小。A vacuum suction mechanism is provided at several stages to increase the heat transfer between the various elements of the system (including the elements of the substrate 201, the baking sheet portion 205, and the elements of the cooling plate portion 207), and to increase the surface flatness of the thermal contact. The baking plate vacuum suction mechanism 232 is provided for continuously applying a negative pressure between the heat diffusion portion 222 and the heater base 226. Since the baking sheet is given a negative pressure by the vacuum suction mechanism 232, the heat diffusion portion 222 and the heater base 226 can be joined by vacuum suction. Further, the flatness of the elements of the baking sheet portion 205 can be improved by vacuum suction, and the flatness and/or thermal conductivity between the baking sheet portion 205 and the passive cooling plate 240 can be improved. As a result, the difference in the degree of heat conduction between different regions is smaller than that shown in Fig. 1.
烤板部205具備基板吸附口234，該基板吸附口234用於將基板201真空吸附於吸附墊220。例如，基板吸附口234給予大約7 kPa之壓力。只要為在大約7 kPa左右之動作，則可保證吸附墊220之長壽命。又，例如用於將吸附墊220真空吸附於熱擴散部222之墊吸附口236，給予大約14 kPa之壓力。此外，亦可給予其他之負壓。藉由墊吸附口236將吸附墊220真空吸附於熱擴散部222，藉此，使吸附墊220連結於熱擴散部222。The baking plate portion 205 includes a substrate adsorption port 234 for vacuum-adsorbing the substrate 201 to the adsorption pad 220. For example, substrate adsorption port 234 imparts a pressure of approximately 7 kPa. As long as it is operated at about 7 kPa, the long life of the adsorption pad 220 can be ensured. Further, for example, the adsorption pad 220 is vacuum-adsorbed to the pad adsorption port 236 of the heat diffusion portion 222, and a pressure of about 14 kPa is applied. In addition, other negative pressures can be given. The adsorption pad 220 is vacuum-adsorbed to the thermal diffusion portion 222 by the pad adsorption port 236, whereby the adsorption pad 220 is coupled to the thermal diffusion portion 222.
冷卻板用真空吸附機構230，係用於提高熱墊210與被動冷卻板240之間之平坦度及/或熱傳導率而設置。因為冷卻板用真空吸附機構230給予負壓，熱墊210藉由真空吸附連結於被動冷卻板240。在圖2中，烤板用真空吸附機構232及冷卻板用真空吸附機構230兩者連通連接於真空源225，但亦可使用不同之真空源。又，於熱墊210形成吸附通道212，從而對熱墊210與加熱器層224之間給予良好之密封性。再者，亦可使用結合材將熱墊210連結於被動冷卻板240。The cooling plate vacuum suction mechanism 230 is provided to increase the flatness and/or thermal conductivity between the thermal pad 210 and the passive cooling plate 240. Since the cooling plate is given a negative pressure by the vacuum suction mechanism 230, the heat pad 210 is coupled to the passive cooling plate 240 by vacuum suction. In Fig. 2, the vacuum suction mechanism 232 for the baking sheet and the vacuum suction mechanism 230 for the cooling plate are connected to the vacuum source 225 in communication, but different vacuum sources may be used. Further, the adsorption pad 212 is formed in the thermal pad 210 to provide a good seal between the thermal pad 210 and the heater layer 224. Furthermore, the thermal pad 210 may be coupled to the passive cooling plate 240 using a bonding material.
被動冷卻板240於上下移動亦與主動RTC板(主動冷卻板)242接觸。即，被動冷卻板240配置於主動冷卻板242與烤板部205之間，並藉由氣缸248而上升與烤板部205接觸，且下降與主動冷卻板242接觸。主動冷卻板242為具備冷卻水供給口244與冷卻水排放口246之水冷式冷卻板。再者，雖在圖2中省略圖示，但於被動冷卻板240及主動冷卻板242，形成有用於進行加熱器層224之閉環控制之RTD(測溫電阻體)感測器、及用於對加熱器層224之複數個區域通電之開口。The passive cooling plate 240 is also moved up and down to be in contact with the active RTC board (active cooling plate) 242. That is, the passive cooling plate 240 is disposed between the active cooling plate 242 and the baking plate portion 205, and is brought into contact with the baking plate portion 205 by the air cylinder 248, and is lowered into contact with the active cooling plate 242. The active cooling plate 242 is a water-cooled cooling plate including a cooling water supply port 244 and a cooling water discharge port 246. Further, although not shown in FIG. 2, an RTD (temperature measuring resistor) sensor for performing closed-loop control of the heater layer 224 is formed on the passive cooling plate 240 and the active cooling plate 242, and is used for An opening that energizes a plurality of regions of the heater layer 224.
在系統之動作中，加熱基板201時，被動冷卻板240與主動冷卻板242熱接觸。在圖2之例中，被動冷卻板240降下與主動冷卻板242物理接觸。藉此，被動冷卻板240亦可冷卻至與藉由冷卻水強制性冷卻之主動冷卻板242相同之溫度。In the operation of the system, when the substrate 201 is heated, the passive cooling plate 240 is in thermal contact with the active cooling plate 242. In the example of FIG. 2, the passive cooling plate 240 is lowered into physical contact with the active cooling plate 242. Thereby, the passive cooling plate 240 can also be cooled to the same temperature as the active cooling plate 242 forcedly cooled by the cooling water.
為將烤板部205之設定溫度從高溫降低至低溫，被動冷卻板240藉由氣缸248上升，與烤板部205之下面扣合。上升之被動冷卻板240以夾住熱墊210之方式，與烤板部205之下面之加熱器層224接觸。藉此，從烤板部205之加熱器層224經由熱墊210產生對被動冷卻板240之熱傳導，將烤板部205急速冷卻。如上所述，加熱器層224及被動冷卻板240之平坦度之變動係藉由熱墊210而獲得補償。加熱器層224之電極及外罩，為利用熱墊210所補償之對象即平坦度之變動的要因。熱墊210隨著加熱器層224之形狀而變形，藉此，烤板部205與被動冷卻板240之密接性提高，烤板部205之冷卻所需之時間縮短。熱墊210之壓縮性典型的是因材料之特性而受到限制。為增加材料之柔軟性，只要降低構成熱墊210之微粒子(例如，石墨)之密度即可，但如此一來亦會降低熱傳導率。如此，高柔軟性與高熱傳導率之間會產生平衡之問題。In order to lower the set temperature of the baking plate portion 205 from a high temperature to a low temperature, the passive cooling plate 240 is lifted by the air cylinder 248 to be engaged with the lower surface of the baking plate portion 205. The rising passive cooling plate 240 is in contact with the heater layer 224 under the baking plate portion 205 in such a manner as to sandwich the thermal pad 210. Thereby, heat conduction to the passive cooling plate 240 is generated from the heater layer 224 of the baking sheet portion 205 via the heat pad 210, and the baking plate portion 205 is rapidly cooled. As described above, variations in the flatness of the heater layer 224 and the passive cooling plate 240 are compensated by the thermal pad 210. The electrode and the cover of the heater layer 224 are the factors for the change in the flatness of the object compensated by the thermal pad 210. The heat pad 210 is deformed in accordance with the shape of the heater layer 224, whereby the adhesion between the baking sheet portion 205 and the passive cooling plate 240 is improved, and the time required for cooling of the baking sheet portion 205 is shortened. The compressibility of the thermal pad 210 is typically limited by the nature of the material. In order to increase the softness of the material, it is only necessary to reduce the density of the fine particles (for example, graphite) constituting the heat pad 210, but this also lowers the thermal conductivity. Thus, there is a problem of balance between high flexibility and high thermal conductivity.
在本實施形態中，於烤板部205加熱基板201時，使被動冷卻板240降下，與主動冷卻板242物理性接觸，藉此藉由主動冷卻板242將被動冷卻板240強制冷卻。且，將烤板部205之設定溫度從高溫變更至低溫時，使已冷卻之被動冷卻板240上升，與烤板部205之加熱器層224物理性接觸，藉此，使烤板部205之熱向被動冷卻板240移動，縮短烤板部205之溫度變更所需之時間。In the present embodiment, when the baking plate portion 205 heats the substrate 201, the passive cooling plate 240 is lowered and physically in contact with the active cooling plate 242, whereby the passive cooling plate 240 is forcibly cooled by the active cooling plate 242. When the set temperature of the baking sheet portion 205 is changed from a high temperature to a low temperature, the cooled passive cooling plate 240 is raised and physically contacts the heater layer 224 of the baking sheet portion 205, whereby the baking sheet portion 205 is caused. The heat moves to the passive cooling plate 240 to shorten the time required for the temperature change of the baking sheet portion 205.
本發明之實施形態在使用真空吸附，以使熱墊210之形狀隨著烤板部205之形狀變形方面與先前技術不同。如在本說明書之整體所述，係使用真空吸附機構，以使吸附墊220之形狀接觸烤板部205而變形。真空吸附亦用於使連結於被動冷卻板240之熱墊210之表面輪廓變形。典型的是，真空吸附係用於改變從真空吸附夾具分離之對象物(例如，基板)之形狀。此處，代替改變從夾具分離之某種形狀而對夾具作用以負壓，而是對被動冷卻板240作用以負壓，以使熱墊210之形狀變形。於被動冷卻板240形成有吸附孔，吸附通道212形成於適合該吸附孔之位置。Embodiments of the present invention differ from the prior art in that vacuum suction is used to deform the shape of the thermal pad 210 in accordance with the shape of the baking sheet portion 205. As described in the entirety of the present specification, a vacuum suction mechanism is used to deform the shape of the adsorption pad 220 in contact with the baking sheet portion 205. Vacuum adsorption is also used to deform the surface profile of the thermal pad 210 attached to the passive cooling plate 240. Typically, a vacuum adsorption system is used to change the shape of an object (e.g., a substrate) separated from a vacuum adsorption jig. Here, instead of changing the shape separated from the jig, a negative pressure is applied to the jig, and a passive pressure is applied to the passive cooling plate 240 to deform the shape of the thermal pad 210. An adsorption hole is formed in the passive cooling plate 240, and the adsorption channel 212 is formed at a position suitable for the adsorption hole.
於熱墊210形成吸附通道212時，有為維持吸附通道212內之減壓而使熱墊210充分厚，與為維持良好之熱傳導而使熱墊210充分薄之2者對立之設計上之制約。本發明者等調查明白可藉由改善接觸區域，將冷卻導致之溫度不均一性從12℃降低至小於2℃之同時，亦可將冷卻時間減少45%。例如，一般而言從140℃降溫至90℃所需之時間為大約150秒(冷卻100秒+穩定化50秒)。根據本發明之技術，則可將降溫50℃所需之時間從93秒減至僅需50秒(即，提高45%)。除此之外，期待穩定化所需之時間亦可降低70%左右。When the adsorption pad 212 is formed in the thermal pad 210, the thermal pad 210 is sufficiently thick to maintain the decompression in the adsorption channel 212, and the design of the thermal pad 210 is sufficiently thin to maintain good thermal conduction. . The inventors of the present invention have found that the improvement of the contact area can reduce the temperature unevenness caused by cooling from 12 ° C to less than 2 ° C, and can also reduce the cooling time by 45%. For example, in general, the time required to cool from 140 ° C to 90 ° C is about 150 seconds (cooling 100 seconds + stabilizing 50 seconds). According to the technique of the present invention, the time required to cool down by 50 ° C can be reduced from 93 seconds to only 50 seconds (i.e., increased by 45%). In addition, the time required for stabilization is also reduced by about 70%.
總而言之，圖2所示之烤板部205適用若干個真空吸附機構。即，使用真空吸附，以使吸附墊220真空吸附於熱擴散部222，且使基板201筆直，進而將加熱器基台226亦真空吸附於熱擴散部222。夾具之吸附係藉由設置於夾具之端部，且連接形成於夾具之上面之通道之吸附口(與基板吸附口234連通連接)而實現。在本實施形態中，設置有6個吸附口，以真空吸附基板201。熱擴散部222其上面及下面兩者具備吸附通道。上面之吸附通道為用於吸附吸附墊220者，而下面之吸附通道為用於吸附加熱器基台226者。若使用真空吸附，以使吸附墊220、熱擴散部222及加熱器基台226熱接觸，則相較於先前技術，能夠享有可提高平坦度之同時，亦可削減成本之利益。又，相較於將該等之要素相互螺固之先前之技術，真空吸附可降低機械緊固引起之彎曲。In summary, the baking sheet portion 205 shown in Fig. 2 is applied to a plurality of vacuum suction mechanisms. That is, vacuum adsorption is used to vacuum-adsorb the adsorption pad 220 to the thermal diffusion portion 222, and the substrate 201 is straightened, and the heater base 226 is also vacuum-adsorbed to the thermal diffusion portion 222. The adsorption of the jig is achieved by being disposed at the end of the jig and connecting the adsorption port (connected to the substrate adsorption port 234) of the channel formed on the upper surface of the jig. In the present embodiment, six adsorption ports are provided to vacuum-adsorb the substrate 201. The heat diffusion portion 222 has adsorption channels on both the upper and lower sides thereof. The upper adsorption channel is for adsorbing the adsorption pad 220, and the lower adsorption channel is for adsorbing the heater base 226. When the vacuum adsorption is used to bring the adsorption pad 220, the heat diffusion portion 222, and the heater base 226 into thermal contact, the flatness can be improved and the cost can be reduced as compared with the prior art. Moreover, vacuum adsorption can reduce bending caused by mechanical fastening as compared to prior art techniques in which the elements are screwed together.
圖3係本實施形態之熱擴散部222及加熱器基台226之自上方之立體圖。圖4係熱擴散部222及加熱器基台226之自下方之立體圖。如圖3及圖4所示，吸附通道310、312分別形成於熱擴散部222之上面及下面。Fig. 3 is a perspective view of the heat diffusion portion 222 and the heater base 226 of the present embodiment from above. 4 is a perspective view of the thermal diffusion portion 222 and the heater base 226 from below. As shown in FIGS. 3 and 4, the adsorption channels 310 and 312 are formed on the upper surface and the lower surface of the thermal diffusion portion 222, respectively.
圖5係顯示本實施形態之多區域烤板之每個區域之RTD溫度變化之圖。如圖5所示，將烤板之溫度從第1設定溫度降溫至第2設定溫度所需之時間，從93秒縮短至50秒。除此之外，區域間之均一性亦顯著改善。如圖5所示，加熱器區域間之溫度差小於2℃，且冷卻時間提高45%。Fig. 5 is a graph showing the RTD temperature change of each region of the multi-region baking sheet of the present embodiment. As shown in Fig. 5, the time required to lower the temperature of the baking sheet from the first set temperature to the second set temperature was shortened from 93 seconds to 50 seconds. In addition, the uniformity between regions has also improved significantly. As shown in Figure 5, the temperature difference between the heater zones is less than 2 °C and the cooling time is increased by 45%.
圖6係顯示被動冷卻板240之圖。圖7係顯示加熱器罩510之圖。再者，加熱器罩510並非為必須之要素。於被動冷卻板240設置有用於通過提升銷或電子布線之通過孔。加熱器罩510為不鏽鋼製，且其內面經過研磨。FIG. 6 is a diagram showing the passive cooling plate 240. Figure 7 is a diagram showing the heater cover 510. Furthermore, the heater cover 510 is not an essential element. The passive cooling plate 240 is provided with a through hole for passing the lift pin or the electronic wiring. The heater cover 510 is made of stainless steel and its inner surface is ground.
圖8係顯示形成於熱墊210之吸附通道212之圖。圖9係顯示本實施形態之真空吸附機構之連結構造之圖。FIG. 8 is a view showing the adsorption channel 212 formed on the thermal pad 210. Fig. 9 is a view showing a connection structure of the vacuum suction mechanism of the embodiment.
本發明並不限定於上述之例或實施形態，只要不脫離其主旨之範圍內，可進行各種之變更。The present invention is not limited to the above-described examples or embodiments, and various modifications can be made without departing from the spirit and scope of the invention.
201．．．基板201. . . Substrate
205．．．烤板部205. . . Baking plate
207．．．冷卻板部207. . . Cooling plate
210．．．熱墊210. . . Hot pad
212．．．吸附通道212. . . Adsorption channel
220．．．吸附墊220. . . Adsorption pad
222．．．熱擴散部222. . . Thermal diffusion
224．．．加熱器層224. . . Heater layer
225．．．真空源225. . . Vacuum source
226．．．加熱器基台226. . . Heater abutment
230．．．冷卻板用真空吸附機構230. . . Vacuum adsorption mechanism for cooling plate
232．．．烤板用真空吸附機構232. . . Vacuum adsorption mechanism for baking sheets
234．．．基板吸附口234. . . Substrate adsorption port
236．．．墊吸附口236. . . Pad adsorption port
240．．．被動冷卻板240. . . Passive cooling plate
242．．．主動冷卻板242. . . Active cooling plate
244．．．冷卻水供給244. . . Cooling water supply
246．．．冷卻水排放246. . . Cooling water discharge
248．．．氣缸248. . . cylinder
310．．．吸附通道310. . . Adsorption channel
312．．．吸附通道312. . . Adsorption channel
510．．．加熱器罩510. . . Heater cover
圖1係顯示基板之溫度變化之圖。Figure 1 is a graph showing changes in temperature of a substrate.
圖2係顯示本發明之高速溫度變更系統之概略構成之圖。Fig. 2 is a view showing a schematic configuration of a high-speed temperature changing system of the present invention.
圖3係本實施形態之熱擴散部及加熱器基台之自上方之立體圖。Fig. 3 is a perspective view of the heat diffusion portion and the heater base of the embodiment from above.
圖4係熱擴散部及加熱器基台之自下方之立體圖。Figure 4 is a perspective view of the thermal diffuser and the heater base from below.
圖5係顯示本實施形態之多區域烤板之每個區域之RTD溫度變化的圖。Fig. 5 is a graph showing changes in RTD temperature of each region of the multi-region baking sheet of the present embodiment.
圖6係顯示被動冷卻板之圖。Figure 6 is a diagram showing a passive cooling plate.
圖7係顯示加熱器罩之圖。Figure 7 is a diagram showing the heater cover.
圖8係顯示形成於熱墊之吸附通道之圖。Fig. 8 is a view showing an adsorption channel formed on a thermal pad.
圖9係顯示本實施形態之真空吸附機構之連結構造之圖。Fig. 9 is a view showing a connection structure of the vacuum suction mechanism of the embodiment.
201．．．基板201. . . Substrate
205．．．烤板部205. . . Baking plate
207．．．冷卻板部207. . . Cooling plate
210．．．熱墊210. . . Hot pad
212．．．吸附通道212. . . Adsorption channel
220．．．吸附墊220. . . Adsorption pad
222．．．熱擴散部222. . . Thermal diffusion
224．．．加熱器層224. . . Heater layer
225．．．真空源225. . . Vacuum source
226．．．加熱器基台226. . . Heater abutment
230．．．冷卻板用真空吸附機構230. . . Vacuum adsorption mechanism for cooling plate
232．．．烤板用真空吸附機構232. . . Vacuum adsorption mechanism for baking sheets
234．．．基板吸附口234. . . Substrate adsorption port
236．．．墊吸附口236. . . Pad adsorption port
240．．．被動冷卻板240. . . Passive cooling plate
242．．．主動冷卻板242. . . Active cooling plate
244．．．冷卻水供給244. . . Cooling water supply
246．．．冷卻水排放246. . . Cooling water discharge
248．．．氣缸248. . . cylinder
Claims (12)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100125191A TWI424541B (en) | 2011-07-15 | 2011-07-15 | Rapid temperature change system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100125191A TWI424541B (en) | 2011-07-15 | 2011-07-15 | Rapid temperature change system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201304087A true TW201304087A (en) | 2013-01-16 |
| TWI424541B TWI424541B (en) | 2014-01-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100125191A TWI424541B (en) | 2011-07-15 | 2011-07-15 | Rapid temperature change system |
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| Country | Link |
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| TW (1) | TWI424541B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI821648B (en) * | 2020-04-10 | 2023-11-11 | 大陸商北京北方華創微電子裝備有限公司 | Heating device of a semiconductor device and an associated semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3445757B2 (en) * | 1999-05-06 | 2003-09-08 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| US6499777B1 (en) * | 1999-05-11 | 2002-12-31 | Matrix Integrated Systems, Inc. | End-effector with integrated cooling mechanism |
| JP4698807B2 (en) * | 2000-09-26 | 2011-06-08 | 東京エレクトロン株式会社 | Semiconductor substrate heat treatment equipment |
| US6887803B2 (en) * | 2001-11-08 | 2005-05-03 | Wafermasters, Inc. | Gas-assisted rapid thermal processing |
| JP2008526030A (en) * | 2004-12-22 | 2008-07-17 | 株式会社Ｓｏｋｕｄｏ | Integrated heat unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI821648B (en) * | 2020-04-10 | 2023-11-11 | 大陸商北京北方華創微電子裝備有限公司 | Heating device of a semiconductor device and an associated semiconductor device |
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