TW201303320A - Method for analyzing electrical properties of solar cell - Google Patents

Method for analyzing electrical properties of solar cell Download PDF

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TW201303320A
TW201303320A TW100124371A TW100124371A TW201303320A TW 201303320 A TW201303320 A TW 201303320A TW 100124371 A TW100124371 A TW 100124371A TW 100124371 A TW100124371 A TW 100124371A TW 201303320 A TW201303320 A TW 201303320A
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light source
solar cell
efficiency
wavelength
electrical data
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TW100124371A
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TWI417559B (en
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Chung-Yu Chang
Hsin-Feng Lee
Mu-Tzu Wei
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Inventec Solar Energy Corp
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Abstract

A method for analyzing the electrical properties of the solar cell is disclosed in the present invention. The method can immediately determine whether the factor leading to solar cell's efficiency drop is due to the substrate quality or the process. Firstly, a database must be established by collecting the electrical data. The electrical data is obtained by irradiating the solar cell with different rank with a solar simulator, a light source having long wavelength or short wavelength. On the production line, the solar cell is irradiated by the solar simulator initially to measure the efficiency. Once the solar cell with the abnormal or low efficiency is found, an additional light source with long wavelength or short wavelength is used to irradiate the solar cell to measure the electrical data, which provides the information mainly come from the interior or the process-layer of the solar cell. Through comparing these electrical data with the database, the factor leading to solar cell's abnormal efficiency can be determined immediately.

Description

太陽能電池的電性分析方法Solar cell electrical analysis method

本發明係有關一種太陽能電池的電性分析方法,特別是指一種可以即時判定生產線上太陽能電池效率異常原因的方法。The invention relates to a method for electrical analysis of a solar cell, in particular to a method for instantly determining the cause of abnormal solar cell efficiency on a production line.

太陽能電池的發電效率以及能源轉換效率,決定了未來太陽能是否能完全取代現有的石化能源,作為主要供電來源。習知的太陽能電池製程包括:清潔、結構化(texturing)、擴散摻雜、絕緣、鍍抗反射層、網印電極及燒結等程序。如圖1所示,太陽能電池1結構分為一基材區10及一製程層11其中,基材區10是指未經過上述製程流程處理之區域;製程層11位於太陽能電池1表層,包括摻雜層110、抗反射層111及電極112等結構層,一般是自太陽能電池表面至以下,大約10μm的深度。The power generation efficiency of solar cells and the efficiency of energy conversion determine whether solar energy can completely replace existing petrochemical energy in the future as a main source of power. Conventional solar cell processes include: cleaning, texturing, diffusion doping, insulation, anti-reflective coating, screen printing electrodes, and sintering. As shown in FIG. 1 , the structure of the solar cell 1 is divided into a substrate region 10 and a process layer 11 , wherein the substrate region 10 refers to a region that has not been subjected to the above process flow; the process layer 11 is located at the surface of the solar cell 1 , including the doping The structural layers such as the impurity layer 110, the anti-reflection layer 111, and the electrode 112 are generally from the surface of the solar cell to below, and have a depth of about 10 μm.

在太陽能產業中,每一片太陽能電池基板完成表面製程之後,成品在出廠前,需要以一太陽光模擬光源來檢測其能源轉換效率,即太陽能電池在光照下所能輸出的電流。除了依照量測結果對太陽能電池分級,並判斷其光電轉換效率是否有達到預期的標準之外,在良率不佳時,也可由量測數據來追溯製程參數,使之能夠最佳化。In the solar industry, after each solar cell substrate completes the surface process, the finished product needs to be tested with a solar light source to detect its energy conversion efficiency, that is, the current that the solar cell can output under illumination. In addition to grading the solar cells according to the measurement results and judging whether the photoelectric conversion efficiency has reached the expected standard, when the yield is not good, the process parameters can be traced back to the process parameters to optimize them.

所以,產品檢測結果不如預期時,工程人員勢必得找出使光電轉換效率降低的關鍵原因,以進一步對製程參數進行調整。依照經驗,造成效率降低大部分原因是因為載子生命期(carrier lifetime)變短。而影響載子生命期的原因有二:一是因為太陽能電池的原料本身就品質不良,也就是基材區的電性不佳造成太陽能電池效率降低;二是因為製程參數不適當,也就是在製程層造成載子生命期變短。Therefore, when the product test results are not as expected, the engineering staff is bound to find out the key reasons for reducing the photoelectric conversion efficiency to further adjust the process parameters. According to experience, most of the reason for the decrease in efficiency is because the carrier lifetime is shortened. There are two reasons for affecting the life of the carrier: First, because the raw materials of the solar cell itself are of poor quality, that is, the poor electrical conductivity of the substrate region causes the efficiency of the solar cell to decrease; second, because the process parameters are not appropriate, that is, The process layer causes the carrier life to become shorter.

對於使用單晶矽作為太陽能電池原料的廠商而言,或許可以忽略第一個因素。但是,對於使用多晶矽作為太陽能電池基板的廠商來說,每一片晶圓的品質並不如使用單晶矽太陽能電池基板那麼固定。因此,工程人員需要比對分析各種數據,才能確定原因究竟出自於製程層,還是基材區,這往往需要耗費一兩天的時間才能判定。For manufacturers using single crystal germanium as a raw material for solar cells, the first factor may be overlooked. However, for manufacturers using polysilicon as a solar cell substrate, the quality of each wafer is not as fixed as the use of a single crystal germanium solar cell substrate. Therefore, engineers need to compare and analyze various data to determine whether the cause is from the process layer or the substrate area, which often takes one or two days to determine.

由於太陽能產業每日生產量非常大,一條生產線一天大約可以生產2至3萬片,所以一旦出現問題,在找出原因之前,需要將該條生產線停下,以避免造成大量損失;但若最後發現是因為原料的問題,則最後只能藉由改換材料來提升光電轉換效率,這樣一來,先前因此而停止生產線,及工程人員所花費的時間,就令人覺得相當不值。Since the solar industry has a very large daily production volume, a production line can produce about 20,000 to 30,000 pieces a day, so once there is a problem, the production line needs to be stopped before the cause is found to avoid causing a large loss; It was discovered that because of the problem of raw materials, the photoelectric conversion efficiency could only be improved by changing the materials. As a result, the time it took to stop the production line and the time spent by the engineers was quite worthless.

因此,若能開發一種方法,可以在短時間內就判定是原料或製程的問題,除了可以節省時間成本,也可以很快避免因製程出錯造成的損失。Therefore, if a method can be developed, it is possible to determine the problem of the raw material or the process in a short time, and in addition to saving time and cost, the loss due to process error can be quickly avoided.

目前在業界中,也有在開始進行太陽能電池製程之前,就先對原料作分析檢測。但由於習知的檢測方式是利用微波使半導體產生電子,再利用線圈(coil)來感測電子產生的量,以得知材料本身的品質。但此種檢測方式,會受到晶圓表面大量懸空鍵(dangling bond)的影響,致使無法準確得知材料本身是否有問題。所以,檢測前,通常需要先做一些表面處理,比如:表面鈍化(surface passivation)或退火(annealing),來減少因為懸空鍵影響實際量測結果的問題。但是,若要將每片晶圓做完處理後進行檢測,則累積的製程成本將會相當可觀。At present, in the industry, before the start of the solar cell process, the raw materials are analyzed and tested. However, since the conventional detection method is to use a microwave to generate electrons in a semiconductor, a coil is used to sense the amount of electrons generated to know the quality of the material itself. However, this type of detection is affected by a large number of dangling bonds on the surface of the wafer, making it impossible to know exactly whether the material itself has a problem. Therefore, before the test, it is usually necessary to do some surface treatment, such as surface passivation or annealing, to reduce the problem that the dangling bond affects the actual measurement results. However, if each wafer is to be processed and tested, the cumulative process cost will be considerable.

在美國公開專利4,301,409中,是揭露利用一單色光,比如:雷射,來回掃描太陽能電池表面,將掃描太陽能電池時,每一點所輸出的電量,以亮度顯示於螢幕,藉此檢測太陽能電池表面是否有裂縫以及其他缺陷。In U.S. Patent No. 4,301,409, it is disclosed that a monochromatic light, such as a laser, is used to scan the surface of a solar cell. When the solar cell is scanned, the amount of electricity outputted at each point is displayed on the screen in brightness, thereby detecting the solar cell. Whether the surface has cracks and other defects.

在美國另一件公開專利6,541,754中,也提到利用多種不同波段的光源,來檢測一光電轉換裝置的光電特性。所述的光電轉換裝置具有堆疊結構,係由多個半導體接面堆疊而成的。藉由所量測出每一個單元電池短路電流相較於在標準測試狀況下的偏移,及實際所量測的光電特徵,來推知所述光電轉換裝置在標準測試狀況下的光電特徵。In another U.S. Patent No. 6,541,754, the use of a plurality of different wavelength sources for detecting the photoelectric characteristics of a photoelectric conversion device is also mentioned. The photoelectric conversion device has a stacked structure and is formed by stacking a plurality of semiconductor junctions. The photoelectric characteristics of the photoelectric conversion device under standard test conditions are inferred by measuring the measured short-circuit current of each unit cell compared to the offset under standard test conditions and the actual measured photoelectric characteristics.

但此專利主要是針對多層堆疊的光電轉換裝置,利用其每一層單元電池本身就會吸收不同波長的光源,來得知每一層單元電池之光電轉換效率,並且,其所用的材料都是單晶,本身品質就很好,所以不具有本發明所存在的問題。However, this patent is mainly for a multi-layer stacked photoelectric conversion device, and each unit cell itself absorbs light sources of different wavelengths to know the photoelectric conversion efficiency of each layer of unit cells, and the materials used are single crystals. The quality of itself is very good, so there is no problem with the present invention.

綜上所述,提供一種即時判定太陽能電池效率異常原因的方法,為本發明之目的。In summary, it is an object of the present invention to provide a method for instantly determining the cause of abnormal solar cell efficiency.

本發明之目的在於提供一種太陽能電池的電性分析方法,以即時判定太陽能電池效率異常的原因,是出自太陽能電池之基材或製程。所述太陽能電池已完成所有製程,具有一基材區及一製程層。It is an object of the present invention to provide an electrical analysis method for a solar cell, which is to determine the cause of abnormal solar cell efficiency, and is a substrate or process from a solar cell. The solar cell has completed all processes and has a substrate region and a process layer.

所述方法包括以下步驟:建立一資料庫,資料庫係以收集光電轉換效率不同等級之太陽能電池分別予以照射一正常光源、一長波長光源或一短波長光源,以量取該些太陽能電池之電性數據,及基材區或製程層個別之電性數據,正常光源為一太陽光模擬光源,而上述之長波長光源,或短波長光源是相對正常光源波長範圍而言;設定一警示標準;對生產線上之每一太陽能電池依序以正常光源照光,量取該些太陽能電池之電性數據,並依據警示標準發現效率異常之太陽能電池;對效率異常之太陽能電池再施以長波長或短波長光源照射,以得到主要來自基材區或製程層的電性數據。The method comprises the steps of: establishing a database for respectively illuminating a normal light source, a long wavelength light source or a short wavelength light source for collecting solar cells of different levels of photoelectric conversion efficiency, so as to measure the solar cells. Electrical data, and individual electrical data of the substrate area or process layer, the normal light source is a solar analog light source, and the long wavelength light source or the short wavelength light source is relative to the normal light source wavelength range; setting a warning standard Each solar cell on the production line is sequentially illuminated with a normal light source, and the electrical data of the solar cells are measured, and the solar cell with abnormal efficiency is found according to the warning standard; and the solar cell with abnormal efficiency is applied with a long wavelength or The short wavelength source is illuminated to obtain electrical data primarily from the substrate region or process layer.

最後,比對資料庫及效率異常太陽能電池在不同照光條件下的電性數據,以即時判別太陽能電池效率異常的原因,是出自於基材區或是製程層。Finally, comparing the data of the database and the efficiency of the abnormal solar cell under different illumination conditions, the reason for the abnormality of the solar cell efficiency is determined by the substrate area or the process layer.

本發明所提供的方法,一旦發現太陽能電池效率不佳時,可以立即分辨是製程或原料本身的原因所造成的,有助於工程人員立即決定後續的處理方式,以減少損失。The method provided by the invention, when it is found that the solar cell is inefficient, can be immediately distinguished by the cause of the process or the raw material itself, and helps the engineering personnel to immediately determine the subsequent processing manner to reduce the loss.

為使本發明之上述目的、特徵和優點能更明顯易懂,下文依本發明之太陽能電池的電性分析方法,特舉較佳實施例,並配合所附相關圖式,作詳細說明如下。In order to make the above objects, features and advantages of the present invention more comprehensible, the following is a detailed description of the electrical analysis method of the solar cell according to the present invention, with reference to the accompanying drawings.

如前所述,太陽能電池完成所有製程,結構可大致分為一基材區及一製程層,其中,製程層位於基材區表層,自太陽能電池表面至10μm之深度。當太陽能電池光電轉換效率不佳時,本發明係以一正常光源,配合一外加光源,比如:長波長光源或短波長光源,來進行檢測。As described above, the solar cell performs all processes, and the structure can be roughly divided into a substrate region and a process layer, wherein the process layer is located on the surface of the substrate region, from the surface of the solar cell to a depth of 10 μm. When the photoelectric conversion efficiency of the solar cell is not good, the present invention uses a normal light source and an external light source, such as a long wavelength light source or a short wavelength light source, for detection.

其中,正常光源為一太陽光模擬光源,而上述之長波長光源,或短波長光源是相對該正常光源波長範圍而言,其中,長波長或短波長光源係為一外加光源,或以一過濾片過濾正常光源而得。在本發明實施例中,長波長光源波長範圍大約700至1100 nm,而短波長光源波長範圍大約400至500 nm,但實際上,此二光源也可以選擇波長在上述範圍內的單色光。Wherein, the normal light source is a solar light source, and the long wavelength light source or the short wavelength light source is relative to the normal light source wavelength range, wherein the long wavelength or short wavelength light source is an external light source, or filtered by one The sheet is filtered by a normal light source. In the embodiment of the present invention, the long-wavelength light source has a wavelength range of about 700 to 1100 nm, and the short-wavelength light source has a wavelength range of about 400 to 500 nm, but in practice, the two light sources may also select monochromatic light having a wavelength within the above range.

由於長波長光源最多可以穿透太陽能電池表面以下深度約100至150μm,而太陽能電池表面製程深度大約只有10μm,所以,測得的電性數據可以代表太陽能電池基材區的電性,而忽略太陽能電池表面製程對電性結果的影響。Since the long-wavelength light source can penetrate up to about 100 to 150 μm below the surface of the solar cell, and the surface depth of the solar cell is only about 10 μm, the measured electrical data can represent the electrical properties of the solar cell substrate region, while ignoring solar energy. The effect of the battery surface process on the electrical results.

而短波長光源僅能到達太陽能電池表面以下深度約10μm的地方,所以測出的結果,即代表製程層的電性數據。所以,本發明以上述兩種外加光源作檢測,來分辨太陽能電池良率不佳的原因,是基材亦或製程因素所造成。The short-wavelength light source can only reach a depth of about 10 μm below the surface of the solar cell, so the measured result represents the electrical data of the process layer. Therefore, the present invention uses the above two external light sources for detection to distinguish the cause of poor solar cell yield, which is caused by the substrate or process factors.

詳細的檢測步驟請參照圖2,為本發明實施例之流程圖。如步驟S200,建立一資料庫。所述資料庫的建立,係以收集光電轉換效率不同等級之太陽能電池分別予以照射一正常光源、一長波長光源或一短波長光源,以量取該些太陽能電池之電性數據,及基材區或製程層個別之電性數據。資料庫可以一查察表或是關係圖的方式來表示。For detailed detection steps, please refer to FIG. 2, which is a flowchart of an embodiment of the present invention. In step S200, a database is created. The database is established by irradiating a normal light source, a long-wavelength light source or a short-wavelength light source with solar cells of different levels of photoelectric conversion efficiency, to measure the electrical data of the solar cells, and the substrate. Individual electrical data for the zone or process layer. The database can be represented by looking up a table or a diagram.

在本發明實施例中,建立資料庫的方式如步驟S201~S203。繪製的方式包括:以正常光源所測得該些太陽能電池電性數據為Y軸;長波長光源或短波長光源所測得的基材區或製程層的電性數據為X軸,繪製一關係圖,並預設一誤差容許範圍,如圖3所示。關係圖包括至少一關係曲線。In the embodiment of the present invention, the manner of establishing the database is as follows in steps S201 to S203. The drawing method includes: measuring the solar cell electrical data as a Y-axis by a normal light source; measuring the electrical data of the substrate region or the processing layer measured by the long-wavelength light source or the short-wavelength light source as an X-axis, and drawing a relationship Figure, and preset an error tolerance range, as shown in Figure 3. The relationship diagram includes at least one relationship curve.

在本實施例中,利用所述正常光源、長波長或短波長光源照射該批不同等級之太陽能電池,以量測電性時,可以得知光電轉換效率,及影響光電轉換效率的三個因素:填充因子(filled factor)、開路電壓(Voc)及短路電流(Isc)。In this embodiment, the normal light source, the long-wavelength or the short-wavelength light source is used to illuminate the batch of solar cells of different grades, and when measuring the electrical property, the photoelectric conversion efficiency and the three factors affecting the photoelectric conversion efficiency can be known. : filled factor, open circuit voltage (V oc ), and short circuit current (I sc ).

由於在實際製程中,光電轉換效率很容易受到製程參數,比如:太陽能電池表面電極線之線寬之粗細而略有不同,因此,在本發明實施例中,從所量測到的電性數據中,選擇以開路電壓(Voc)或短路電流(Isc)其中之一,來繪製關係圖較佳。In the actual process, the photoelectric conversion efficiency is easily affected by the process parameters, for example, the thickness of the line width of the surface electrode line of the solar cell is slightly different. Therefore, in the embodiment of the present invention, the measured electrical data is obtained. In the middle, it is preferable to select one of the open circuit voltage (V oc ) or the short circuit current (I sc ) to draw the relationship diagram.

請參照圖3,係依照上述方式所繪製之關係圖作為資料庫。圖中包括三條線性關係曲線20~21,由下而上分別是以短波長光源、正常光源及長波長光源照射太陽能電池,所測得之開路電壓(Voc),作為X軸來繪製的。另外,在本發明較佳實施例中,係設定關係曲線的誤差容許範圍大約3至5%。Referring to FIG. 3, the relationship diagram drawn in the above manner is used as a database. The figure includes three linear relationship curves 20 to 21, and the solar cells are irradiated from the bottom to the top by a short-wavelength light source, a normal light source, and a long-wavelength light source, and the measured open circuit voltage (V oc ) is plotted as an X-axis. Further, in the preferred embodiment of the present invention, the tolerance of the setting relationship curve is approximately 3 to 5%.

接著,設定一警示標準,如步驟S205。設定警示標準時,是以正常光源照射生產線上的太陽能電池,並量測光電轉換效率,當其中一太陽能電池的光電轉換效率,低於一預定值時,就立即進行下列步驟,來檢測該片太陽能電池效率不佳之原因。其中,此預定值可以由廠商依照客戶需求來設定,或由廠商本身來設定。Next, a warning criterion is set, as in step S205. When the warning standard is set, the solar cell on the production line is irradiated with a normal light source, and the photoelectric conversion efficiency is measured. When the photoelectric conversion efficiency of one of the solar cells is lower than a predetermined value, the following steps are immediately performed to detect the solar energy. The reason for poor battery efficiency. Among them, the predetermined value can be set by the manufacturer according to the customer's needs, or set by the manufacturer itself.

如步驟S210,對生產線上之每一太陽能電池依序以正常光源照光,量取該些太陽能電池之電性數據,並依據警示標準發現效率異常之太陽能電池。In step S210, each solar cell on the production line is sequentially illuminated with a normal light source, the electrical data of the solar cells is measured, and the solar cell with abnormal efficiency is found according to the warning standard.

如步驟S215,對效率異常之太陽能電池再施以長波長光源或短波長光源照射,以得到主要來自於太陽能電池基材區或製程層的電性數據。In step S215, the solar cell with abnormal efficiency is further irradiated with a long-wavelength light source or a short-wavelength light source to obtain electrical data mainly from the solar cell substrate region or the process layer.

最後,如步驟S220,比對資料庫及效率異常太陽能電池在不同照光條件下所量測到的的電性數據,以即時判別太陽能電池效率異常的原因,是出自於基材區或是製程層。Finally, in step S220, comparing the electrical data measured by the database and the efficiency abnormal solar cell under different illumination conditions, the reason for accurately determining the solar cell efficiency abnormality is from the substrate region or the process layer. .

本發明實施例中,判別方法包括:將以正常光源照射效率異常之太陽能電池,所量測到的電性數據設為Y座標,如步驟S221。接著,將以長波長或短波長光源照射效率異常的太陽能電池,所量測到的電性數據設為X座標,如步驟S222。最後,藉由判斷座標(X,Y)在關係圖中,位置是否落在關係曲線上或誤差容許範圍內,如步驟S223,若”是”,則該太陽能電池效率異常的原因出自於基材,若”否”,則出自於製程。In the embodiment of the present invention, the discriminating method includes: setting the electrical data measured by the solar cell with abnormal illumination efficiency of the normal light source as the Y coordinate, as in step S221. Next, the solar cell whose efficiency is abnormal with a long-wavelength or short-wavelength light source is used, and the measured electrical data is set to the X coordinate, as by step S222. Finally, by judging whether the coordinate (X, Y) is in the relationship diagram, whether the position falls within the relationship curve or the error tolerance range, as in step S223, if YES, the cause of the solar cell efficiency abnormality is derived from the substrate. If "no", it comes from the process.

此處並以圖4A及圖4B舉例如下。首先參照圖4A,係顯示以長波長光源照射太陽能電池所測得之開路電壓,也就是基材區開路電壓作為X軸,正常光源照射太陽能電池所測得之開路電壓為Y軸的關係圖。其中,4a、4b、4c三點分別代表三個效率異常之太陽能電池之量測結果。由圖4A中,可以看出4a及4b測試片之量測座標值分別為(Vsb,a,Vay),(Vsb,b,Vby)。Here, the following is exemplified by FIGS. 4A and 4B. Referring first to Fig. 4A, there is shown a relationship diagram of an open circuit voltage measured by a long wavelength light source illuminating a solar cell, that is, an open circuit voltage measured in a substrate region as an X axis, and an open circuit voltage measured by a normal light source illuminating a solar cell as a Y axis. Among them, the three points 4a, 4b, and 4c respectively represent the measurement results of three solar cells with abnormal efficiency. From Fig. 4A, it can be seen that the measured coordinate values of the 4a and 4b test pieces are (V sb, a , V ay ), (V sb, b , V by ), respectively.

4a測試片的X座標值Vsb,a,比對資料庫所建立的關係曲線22,原本應該對應到Voc,A,但因為製程因素,才造成實際值Vay與標準值Voc,A有所偏差;4b測試片之狀況亦然。所以,4a點及4b點係代表4a和4b兩個測試片效率異常的原因,主要是來自於製程層。The X coordinate value of the 4a test piece V sb,a , the relationship curve 22 established by the comparison database should originally correspond to V oc,A , but the actual value V ay and the standard value V oc , A are caused by the process factors. There is a bias; the condition of the 4b test piece is also true. Therefore, points 4a and 4b represent the reasons for the abnormal efficiency of the two test pieces 4a and 4b, mainly from the process layer.

請再參照圖4A中,4c測試片之量測座標值分別為(Vsb,c,Vcy),恰好落在關係曲線22上。由於Vcy為實際量測值,表示4c測試片的效率不如預期是因為基材本身特性就不佳所造成的。Referring to FIG. 4A again, the measured coordinate values of the 4c test piece are respectively (V sb, c , V cy ), which just fall on the relationship curve 22. Since V cy is the actual measured value, it indicates that the efficiency of the 4c test piece is not as expected due to the poor properties of the substrate itself.

在另一實施例中,圖4B顯示以短波長光源照射太陽能試片,所測得之開路電壓,也就是以製程層開路電壓做X軸。正常光源所測得之開路電壓為Y軸的關係圖。其中,4a’、4b’、4c’三個測試片的狀況及判斷方式與圖4A相同。In another embodiment, FIG. 4B shows that the solar current test piece is irradiated with a short-wavelength light source, and the measured open circuit voltage is the X-axis of the process layer open circuit voltage. The open circuit voltage measured by the normal light source is a relationship diagram of the Y axis. The conditions and determination methods of the three test pieces 4a', 4b', and 4c' are the same as those in Fig. 4A.

綜上所述,藉由本發明實施例之方法,可以立即判別太陽能電池效率不佳的原因所在,本發明的方法具有下列優點:In summary, the method of the embodiment of the present invention can immediately determine the cause of the poor efficiency of the solar cell, and the method of the present invention has the following advantages:

(1) 方法簡便,成本低廉,可以使流程自動化。只要設定程式,一旦檢測到太陽能電池效率低於一預定值時,再以外加光源進行檢測,並比對資料庫,即可判別異常產生原因,對於原本就製備太陽能的廠商來說,幾乎不會因此而產生多餘的檢測成本。(1) The method is simple, the cost is low, and the process can be automated. As long as the program is set, once the solar cell efficiency is detected to be lower than a predetermined value, and the light source is detected, and the data base is compared, the cause of the abnormality can be determined. For the manufacturer who originally prepared the solar energy, it is hardly As a result, redundant testing costs are incurred.

(2) 可以即時對製程有問題之生產線進行狀況之排除,以避免大量損失。在太陽能電池效率發生異常時,就迅速判定是製程因素還是原料本身的因素,不需要等待一整天的生產線停止後,再對低效率片做抽樣檢驗。(2) It is possible to immediately eliminate the condition of the production line with problems in the process to avoid a large loss. When the efficiency of the solar cell is abnormal, it is quickly determined whether it is a process factor or a raw material itself. It is not necessary to wait for a full day of production line stop, and then perform a sampling test on the low-efficiency film.

(3) 可以節省時間成本,也避免僅是因為原料本身問題,白白耗費一兩天時間,將生產線停止來分析,造成的生產量降低的問題。(3) It can save time and cost, and avoid the problem that the production volume is reduced because it takes only one or two days to waste the analysis of the production line.

(4) 針對原料為多晶,非晶或是單晶的太陽能電池皆可使用本發明之方法,達到快速檢測原因的目的。特別是使用非晶或多晶原料時,較容易產生難以判別是製程或原料而造成效率不佳的問題,利用本發明實施例之方法,更能發揮其功效。(4) For the solar cell whose raw material is polycrystalline, amorphous or single crystal, the method of the invention can be used to achieve the purpose of rapid detection. In particular, when an amorphous or polycrystalline raw material is used, it is easy to cause a problem that it is difficult to discriminate that it is a process or a raw material, resulting in inefficiency, and the method of the embodiment of the present invention can more effectively exert its efficacy.

本發明雖以較佳實例闡明如上,然其並非用以限定本發明精神與發明實體僅止於上述實施例。凡熟悉此項技術者,當可輕易了解並利用其它元件或方式來產生相同的功效。是以,在不脫離本發明之精神與範疇內所作之修改,均應包含在下述之申請專利範圍內。The present invention has been described above by way of a preferred example, but it is not intended to limit the spirit of the invention and the inventive subject matter. Those who are familiar with the technology can easily understand and utilize other components or methods to produce the same effect. Modifications made without departing from the spirit and scope of the invention are intended to be included within the scope of the appended claims.

1...太陽能電池1. . . Solar battery

10...基材區10. . . Substrate area

11...製程層11. . . Process layer

110...摻雜層110. . . Doped layer

111...抗反射層111. . . Antireflection layer

112...金屬電極112. . . Metal electrode

S200、S201、S202、S203、S205、S210、S215、S220、S221、S222、S223...檢測步驟S200, S201, S202, S203, S205, S210, S215, S220, S221, S222, S223. . . Detection step

20~22...關係曲線20~22. . . Relationship lines

圖1習知太陽能電池結構之簡單示意圖;Figure 1 is a simplified schematic view of a conventional solar cell structure;

圖2本發明即時判定太陽能電池效率異常原因的方法之流程圖;2 is a flow chart of a method for instantly determining the cause of abnormal solar cell efficiency according to the present invention;

圖3 以正常光源、長波長及短波長光源照射太陽能電池,所測得之電性數據之關係圖;Figure 3 is a diagram showing the relationship between the measured electrical data by illuminating a solar cell with a normal light source, a long wavelength, and a short wavelength source;

圖4A以正常光源、長波長光源照射太陽能電池,所測得之電性數據之關係圖;及4A is a relationship diagram of measured electrical data by irradiating a solar cell with a normal light source and a long wavelength light source; and

圖4B以正常光源、短波長光源照射太陽能電池,所測得之電性數據之關係圖。Fig. 4B is a diagram showing the relationship between the measured electrical data by irradiating the solar cell with a normal light source and a short-wavelength light source.

S200、S201、S202、S203、S205、S210、S215、S220、S221、S222、S223...檢測步驟S200, S201, S202, S203, S205, S210, S215, S220, S221, S222, S223. . . Detection step

Claims (9)

一種太陽能電池的電性分析方法,可即時判別生產線上太陽能電池效率異常原因,是來自該太陽能電池的基材或製程,其中,該太陽能電池已完成所有製程,具有一基材區及一製程層,該方法包括以下步驟:建立一資料庫,該資料庫係以收集光電轉換效率不同等級之太陽能電池,分別予以照射一正常光源、一長波長光源或一短波長光源,來量取該些太陽能電池之電性數據,該正常光源為一太陽光模擬光源,而上述之長波長光源,或短波長光源是相對該正常光源波長範圍而言;設定一警示標準;對該生產線上之每一太陽能電池依序以該正常光源照光,量取該些太陽能電池之電性數據,並依據該警示標準發現效率異常之太陽能電池;對該效率異常之太陽能電池再施以該長波長光源或該短波長光源照射,以得到主要來自於該太陽能電池基材區或在製程層的電性數據;及比對該資料庫及該效率異常太陽能電池在不同照光條件下的電性數據,並判別該太陽能電池效率異常的原因。An electrical analysis method for a solar cell, which can immediately determine the cause of abnormal solar cell efficiency on the production line, is a substrate or a process from the solar cell, wherein the solar cell has completed all processes, and has a substrate region and a process layer The method comprises the steps of: establishing a database for collecting solar cells of different levels of photoelectric conversion efficiency, respectively irradiating a normal light source, a long wavelength light source or a short wavelength light source to measure the solar energy The electrical data of the battery, the normal light source is a sunlight analog light source, and the long wavelength light source or the short wavelength light source is relative to the normal light source wavelength range; setting a warning standard; each solar energy on the production line The battery sequentially illuminates the normal light source, and measures the electrical data of the solar cells, and finds the solar cell with abnormal efficiency according to the warning standard; and applies the long-wavelength light source or the short wavelength to the solar cell with abnormal efficiency. Irradiating the light source to obtain mainly from the solar cell substrate region or in the process layer Electrical data; and the electrical data of the database and comparing the efficiency of the solar cell abnormality under different illumination conditions, and determines the cause of the abnormality of the solar cell efficiency. 如申請專利範圍第1項所述的方法,其中,建立該資料庫的方法包括:分別在該正常光源照射下,所測得該些太陽能電池之電性數據為Y軸,該長波長光源或該短波長光源照射下,所測得的該些太陽能電池的電性數據為X軸;及繪製一關係圖,該關係圖包括至少一關係曲線,並預設一誤差容許範圍。The method of claim 1, wherein the method for establishing the database comprises: respectively, measuring the electrical data of the solar cells under the illumination of the normal light source as a Y-axis, the long-wavelength light source or Under the illumination of the short-wavelength light source, the measured electrical data of the solar cells is an X-axis; and a relationship diagram is drawn, the relationship diagram includes at least one relationship curve, and an error tolerance range is preset. 如申請專利範圍第1項所述的方法,其中,判斷該太陽能電池效率異常的原因是出自於基材或是製程的方法包括:將以該正常光源照射該效率異常之太陽能電池,所量測到的電性數據設為Y座標;將以該長波長或短波長光源照射該效率異常的太陽能電池,所量測到的電性數據設為X座標;及判斷座標(X,Y)在該關係圖中,位置是否落在該關係曲線上或該誤差容許範圍內,若”是”,則該太陽能電池效率異常的原因出自於基材,若”否”,則出自於製程。The method of claim 1, wherein the method for determining the abnormality of the solar cell efficiency is that the method of the substrate or the process comprises: irradiating the solar cell with the abnormal efficiency by the normal light source, and measuring The obtained electrical data is set to the Y coordinate; the solar cell having the abnormal efficiency is irradiated with the long-wavelength or short-wavelength light source, and the measured electrical data is set as the X coordinate; and the judgment coordinate (X, Y) is in the In the diagram, whether the position falls on the relationship curve or within the tolerance of the error, if "Yes", the cause of the solar cell efficiency abnormality is from the substrate, and if "No", it is from the process. 如申請專利範圍第2或3項所述的方法,其中,量測到的電性數據中,係選擇開路電壓(Voc)或短路電流(Isc)其中之一作為X軸及Y軸。The method of claim 2, wherein in the measured electrical data, one of an open circuit voltage (V oc ) or a short circuit current (I sc ) is selected as the X axis and the Y axis. 如申請專利範圍第1項所述的方法,其中,該正常光源波長範圍大約400至1100 nm,該長波長光源之波長範圍大約700至1100 nm,該短波長光源之波長範圍大約400至500 nm。The method of claim 1, wherein the normal light source has a wavelength range of about 400 to 1100 nm, the long wavelength source has a wavelength range of about 700 to 1100 nm, and the short wavelength source has a wavelength range of about 400 to 500 nm. . 如申請專利範圍第1項所述的方法,其中,該長波長光源或該短波長光源係為一外加光源,或以一過濾片過濾該正常光源而得。The method of claim 1, wherein the long wavelength light source or the short wavelength light source is an external light source or a filter is used to filter the normal light source. 如申請專利範圍第1項所述的方法,其中,該方法係針對原料為多晶,非晶或單晶的太陽能電池。The method of claim 1, wherein the method is directed to a solar cell having a polycrystalline, amorphous or single crystal material. 如申請專利範圍第1項所述的方法,其中,設定該警示標準時,是以正常光源照射生產線上的太陽能電池,量測光電轉換效率,當發現所量測到的光電轉換效率低於一預定值時,就立即進行後續步驟,來檢測該片太陽能電池效率不佳之原因。The method of claim 1, wherein when the warning standard is set, the solar cell on the production line is irradiated with a normal light source, and the photoelectric conversion efficiency is measured, and when the measured photoelectric conversion efficiency is found to be lower than a predetermined one, At the time of the value, the subsequent steps are immediately performed to detect the cause of the inefficiency of the solar cell. 如申請專利範圍第1項所述的方法,其中,該誤差容許範圍大約3至5%。The method of claim 1, wherein the error tolerance range is about 3 to 5%.
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TWI486601B (en) * 2013-07-31 2015-06-01 Ind Tech Res Inst Method for inspecting defects of solar cells and system thereof
TWI662785B (en) * 2018-01-05 2019-06-11 財團法人工業技術研究院 Defect inspection method and system for solar cell
US10461690B2 (en) 2017-12-04 2019-10-29 Industrial Technology Research Institute Defect inspection method and system for solar cell

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JP2010027826A (en) * 2008-07-18 2010-02-04 Nisshinbo Holdings Inc Solar simulator, and method of measuring multi-junction solar cell
TW201043988A (en) * 2009-05-04 2010-12-16 Applied Materials Inc Calibration procedure for solar simulators used in single-junction and tandem-junction solar cell testing apparatus
WO2010135321A2 (en) * 2009-05-19 2010-11-25 Applied Materials, Inc. Method and apparatus for solar cell production line control and process analysis

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TWI486601B (en) * 2013-07-31 2015-06-01 Ind Tech Res Inst Method for inspecting defects of solar cells and system thereof
US10461690B2 (en) 2017-12-04 2019-10-29 Industrial Technology Research Institute Defect inspection method and system for solar cell
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