TW201300965A - Exposure system and exposure method - Google Patents

Abstract

Disclosed herein is an exposure system including: a detection unit detecting alignment marks formed on a substrate; a storage unit storing reference coordinate data for a reference exposure mask displaced on the exposure target substrate and the number of divided exposure regions matched for each substrate modification amount; a control unit calculating real coordinate data for each alignment mark detected through the detection unit, calculating the substrate modification amount by comparing the reference coordinate data with the calculated real coordinate data, generating an exposure mask divided into as many as the number of divided exposure regions by extracting the number of divided exposure regions matched with the substrate modification amount from the storage unit; and an exposure unit performing exposure by using the exposure mask generated by the control unit.

Description

Exposure system and exposure method Cross-references to related applications

The present application claims the benefit of the Korean Patent Application No. 10-2011-0062290, filed on Jun. 27, 2011, entitled,,,,,,,,,,,,, The content is fully incorporated into this application as a reference.

The present invention relates to an exposure system and an exposure method.

In recent years, direct imaging (hereinafter referred to as 'DI') exposers have been used as an exposer for exposing exposed layers on a substrate.

Here, the DI exposer is a device that uses a laser diode as a light source and directly exposes an exposed layer on the substrate without using an additional reticle. More particularly, the DI exposer includes a plurality of exposure heads containing laser diodes. The exposure heads fixed to the scanning unit are spaced apart from each other by a predetermined gap and expose the exposed layer on the substrate with a set exposure amount.

When the exposed layer on the substrate is exposed by the exposer having the above configuration, the coordinates of the respective alignment marks formed on the substrate are first recognized by the CCD camera, and then the respective corrected reference exposure masks are applied. A modified exposure mask having coordinates and respective identification coordinates of the alignment marks to expose the exposed layer on the substrate.

However, in the prior art, the number of the divided exposure regions is set to a preset value, so that it cannot cope with the non-pre-measurement of the substrate. The scale is corrected, and as a result, an eccentricity error occurs during the exposure.

In this case, more eccentricity errors can occur on the sheet with severe scale correction during the process.

The present invention has been made in an effort to provide an exposure system and an exposure method that minimizes the generation of eccentricity when the substrate is exposed.

Further, the present invention has been made in an effort to provide an exposure system and an exposure method which can perform exposure by using an appropriate number of exposure zones in advance by predicting the correction amount of each substrate product.

According to a preferred embodiment of the present invention, there is provided an exposure system comprising: a detecting unit for detecting an alignment mark formed on a substrate; and a storage unit for storing a reference for a reference exposure mask placed on the substrate The coordinate data and the number of exposure zones that match the correction amount of each substrate; the control unit calculates the actual coordinate data of each alignment mark by detecting the detection unit, and calculates the reference coordinate data by comparing the reference coordinate data with the calculated actual coordinate data. The substrate correction amount is generated by extracting the number of exposure zones matching the substrate correction amount from the storage unit to generate as many exposure masks as the number of exposure zones; and the exposure unit uses the generation generated by the control unit Exposure mask to perform exposure.

In this case, the exposure system may further include: a stage having the substrate seated thereon, and further comprising: a drive for moving the platform in the X direction or the Y direction according to the control of the control unit unit.

In addition, the substrate correction amount may include a coordinate difference value of a coordinate distance between each coordinate of the actual coordinate data and a corresponding reference coordinate.

In addition, the substrate correction amount may include a distance difference value of a distance between a coordinate pitch of the actual coordinate data and a corresponding reference coordinate pitch.

The control unit can match the substrate correction amount for each substrate product and store the matched substrate correction amount in the storage unit.

The number of exposure zones can be proportional to the substrate correction amount.

The detecting unit may include a camera device having a photographing device, and the camera device may be a charge coupled device (CCD).

The control unit can calculate the actual coordinate data using information of the distance of the alignment mark from the predetermined reference point.

The control unit can divide the exposed area of the substrate into as many as the extracted exposure sections, and generate an exposure mask in which an alignment mark of each of the exposure sections matches an alignment mark formed on the substrate And transmitting the generated exposure mask to the exposure unit.

According to another preferred embodiment of the present invention, there is provided an exposure method comprising the steps of: providing a substrate having an alignment mark to an exposure device; detecting the alignment marks with the exposure device and calculating the detected pairs The actual coordinate data of the quasi-mark; the substrate correction amount is calculated by comparing the reference coordinate data of the reference exposure mask placed on the substrate with the actual coordinate data; and the calculation substrate is taken out from the previously stored information Correction The amount of exposure zones is matched to produce as many exposure masks as are divided into the exposure zones; and the exposure mask is used to expose the substrate.

In this case, the calculating step of the correction amount may include: calculating the coordinate difference values, which are respectively the coordinate distances between the coordinates of the actual coordinate data and the corresponding reference coordinates.

In addition, the calculating step of the correction amount may include: calculating a distance difference between the coordinate spacing of the actual coordinate data and the corresponding reference coordinate spacing.

In addition, the calculating step of the correction amount may further include: generating a corrected exposure mask obtained by modifying the reference exposure mask to match the actual coordinate data by comparing the reference coordinate data with the actual coordinate data.

In addition, the exposure method may further include: after the calculating step of the correction amount, matching the calculated substrate correction amount for each substrate product and storing the matched substrate correction amount.

In this case, the number of exposure zones can be proportional to the substrate correction amount.

In this case, the calculation of the actual coordinate data can be accomplished using information of the distance of the detected alignment mark from the predetermined reference point.

The step of generating the exposure mask may include: placing an exposure mask, wherein the exposed area of the substrate is divided into as many as the exposure sections on the substrate; and matching the pairs formed on the substrate The alignment mark is an alignment mark for each of the partitions of the exposure mask.

The invention will be understood from the following description of embodiments with reference to the drawings Various goals, advantages and features.

The terms and words used in the specification and claims should not be construed as being limited to the typical meaning or the definition of the dictionary, but should be construed as having meanings and concepts related to the technical scope of the present invention. The rules for the best method for implementing the invention, which is known to him or her, are best described in accordance with the concept that the inventor can appropriately define the term.

The above and other objects, features and advantages of the present invention will become apparent from The components in the drawings of the present specification are allotted with the component symbols, however, it should be noted that similar components are denoted by the same component symbols even if the components appear in different drawings. Further, the detailed description will be omitted if it is determined that the detailed description of the prior art related to the present invention may obscure the gist of the present invention.

Hereinafter, preferred embodiments in accordance with the present invention will be described in detail with reference to the accompanying drawings.

Exposure system

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic configuration diagram for describing the configuration of an exposure system in accordance with a preferred embodiment of the present invention. Hereinafter, referring to Fig. 1, an exposure system according to a preferred embodiment of the present invention will be described.

Referring to FIG. 1, an exposure system 100 in accordance with a preferred embodiment of the present invention includes an exposure unit 140, a detection unit 130, a storage unit 160, and a control unit 150.

The exposure unit 140 configured to illuminate the light onto the exposure target substrate 120 includes a light source.

In the preferred embodiment, an ultraviolet lamp and a laser diode can be used as the light source, but are not particularly limited thereto.

Furthermore, the exposure unit 140 according to the preferred embodiment may include a plurality of exposure heads (not shown) including a light source (ie, a laser diode), and the plurality of exposure heads may be disposed apart from each other by a predetermined gap. An exposure head (not shown), but is not particularly limited thereto.

Moreover, in the preferred embodiment, the exposure unit 140 may further include an additional movement section to move the exposure heads (not shown) in the X direction or the Y direction according to the exposure pattern.

The detecting unit 130 is disposed between the exposure target substrate 120 and the exposure unit 140 to detect the alignment mark 120a formed on the exposure target substrate 120.

In the preferred embodiment, the detecting unit 130 may include a camera of a camera device, and the camera device may be a charge coupled device (CCD), but is not particularly limited thereto, and all components capable of obtaining an image may be applied.

Further, in the preferred embodiment, as shown in FIG. 1, the detecting unit 130 may include a plurality of camera devices installed in a series, but is not particularly limited thereto.

Moreover, in the preferred embodiment, detection unit 130 can further include additional moving components that enable the camera devices to move.

The storage unit 160 stores reference coordinate data for replacing the reference exposure mask on the exposure target substrate 120 and information for matching the number of exposure partitions of the respective substrate correction amounts.

Here, the reference exposure mask is an exposure mask having a scale coincident with the exposure region 120b of the exposure target substrate 120, and the exposure target substrate 120 is in an original state in which no correction occurs, as shown in FIG. 1, and for each Substrate product, matching reference coordinate data for reference exposure mask to pre-store It is preferred to store in the storage unit 160.

Further, the information of the number of exposure zones matching the correction amount of each substrate is information which divides the area into the exposure area 120b according to the correction amount of the substrate. The following is a detailed description of them.

The control unit 150 calculates the actual coordinate data of each of the alignment marks 120a by detecting the detection unit 130, calculates the substrate correction amount by comparing the reference coordinate data with the actual coordinate data, and extracts and corrects the substrate from the storage unit 160. The quantity matches the number of exposure zones to produce an exposure mask that is split into as many as the number of exposure zones, and the resulting exposure mask is transmitted to the exposure unit 140.

Here, the actual coordinate data can be calculated using the information of the distance of the alignment mark 120a from the previously set reference point. As described above, since the coordinates are calculated using the reference point and the moving distance, the detailed description will be omitted.

In addition, the substrate correction amount may include a coordinate difference value between the coordinates of the actual coordinate data and the coordinate distance of the corresponding reference coordinate.

The coordinate difference value is, for example, a coordinate distance between the actual coordinates a', b', c', and d' of the exposure target substrate 120 and the corresponding reference coordinates a, b, c, and d, as shown in Fig. 3.

For example, the coordinate difference value is the coordinate distance between the actual coordinate a' and the reference coordinate a, the coordinate distance between the actual coordinate b' and the reference coordinate b, the coordinate distance between the actual coordinate c' and the reference coordinate c, and the actual coordinate d' and the reference Coordinate distance of coordinate d. These coordinate distances can be obtained using a general conventional equation for finding the coordinate spacing.

The coordinate value is a piece of data that can be used to determine in detail which part of the substrate is to be corrected.

In addition, the substrate correction amount may include a distance difference between a coordinate pitch of the actual coordinate data and a distance of the corresponding reference coordinate distance, respectively.

For example, please refer to Figure 3 to find the difference in distance by calculating the following actual coordinate spacing: R ₁ (distance from a' to b'), R ₂ (distance from a' to c'), R ₃ (distance from c' to d'), R ₄ (distance from b' to d'), R ₅ (distance from a' to d') and R ₆ (distance from b' to c') Corresponding reference coordinate spacing with: S ₁ (distance from a to b), S ₂ (distance from a to c), S ₃ (distance from c to d), S ₄ (distance from b to d) ), S ₅ (distance from a to d) and S ₆ (distance from b to c), that is, R ₁ -S ₁ , R ₂ -S ₂ , R ₃ -S ₃ , R ₄ - S ₄ , R ₅ -S ₅ , and R ₆ -S ₆ .

The distance between the reference coordinates of the distance between the actual coordinates can also be obtained using the above equation for obtaining the coordinate spacing.

The distance difference is information that can be used to monitor the entire scale of the substrate to be changed to that form.

In this case, the control unit 150 matches the correction amount including the coordinate difference value and the distance difference value for each of the substrate products and stores it in the storage unit 160.

The number of exposure zones is the number of exposure zones 120b (the exposure target substrate 120 is exposed here), as shown in FIG. 4, for example, when the correction amount of the exposure target substrate 120 is classified into A, B, and C, the exposure zone is used. The correction amount in the range of A to B is applied to the exposure target substrate 120 in four divisions, and the exposure division is applied to the exposure target in the range of B to C. The number of the target substrates 120 is eight partitions, and the number of exposure regions to be applied to the exposure target substrate 120 with a correction amount of C or more is 16 partitions.

In this case, 4 partitions, 8 partitions, and 16 views are examples to help understand and the number of exposure partitions is not limited.

In addition, an example in which the exposure is divided into four partitions, eight partitions, and 16 partitions is shown in FIGS. 5 to 7 respectively. Also, the partitions may be realized based on the alignment marks 120a formed on the exposure target substrate 120, but are not particularly limited thereto.

As shown in Fig. 4, when the substrate correction amount is low, the number of exposure zones is reduced, so that the matching power is slightly smaller, but the number of exposure zones is small, thereby shortening the matching time and reducing the operation time to improve. The operation efficiency, and when the substrate correction amount is high, the number of exposure zones is increased, so that the matching power becomes high, but the number of exposure zones is large, so that the alignment time becomes long and the operation time is increased to be somewhat deteriorated in operation efficiency.

Therefore, it is important to improve the operational efficiency while increasing the matching power by allocating the optimum number of exposure zones depending on the correction amount. Preferably, the number of optimal exposure zones matching the correction amount of each substrate is preferably based on data obtained by a plurality of experiments in a person having ordinary knowledge in the art, and information on the number of exposure zones matching the correction amount of each substrate is preferably stored in advance in the storage unit. 160.

In addition, the control unit 150 takes out the number of exposure zones that match the correction amount of the calculation substrate by the storage unit 160, and exposes the exposure target substrate 120. The light area 120b is divided into as many as the exposure exposure section, and an exposure mask (not shown) in which the alignment marks formed on the exposure target substrate 120 match the alignment marks of the respective exposure sections and the exposure to the exposure unit 140 are generated. . The exposure unit 140 exposes the exposure target substrate 120 using an exposure mask (not shown) transmitted by the control unit 150.

Likewise, by exposing the partitions and re-matching the alignment marks of the respective partitions, it is possible to perform the exposure process more accurately.

The exposure system 100 according to the preferred embodiment may further include a stage 110 on which the exposure target substrate 120 is seated, as shown in FIG.

Moreover, the exposure system can further include a drive unit 170 that moves in the X or Y direction of the platform 110 in accordance with control of the control unit 150.

In the preferred embodiment, as shown in FIG. 1, the detecting unit 130 is placed on the upper surface of the platform 110 and when the exposure target substrate 120 is seated on the platform 110, when the platform 110 moves in the X direction or the Y direction. The mounted exposure target substrate 120 is moved in the X direction or the Y direction, wherein the detecting unit 130 is fixed to allow the detecting unit 130 to detect all the alignment marks 120a on the exposure target substrate 120.

However, in contrast to this, when the stage 110 is fixed, the alignment mark 120a on the exposure target substrate 120 can also be detected when the detecting unit 130 moves in the X direction or the Y direction.

In addition, in the preferred embodiment, as shown in FIG. 1, the exposure unit 140 is placed on the upper surface of the exposure target substrate 120, and under the exposure unit 140, the platform 110 can be along the X according to the set exposure pattern. direction The exposure target substrate 120 is moved when moving in the Y direction.

Even in this case, the exposure on the exposure target substrate 120 can be exposed when the exposure unit 140 moves in the X direction or the Y direction according to the exposure pattern on the stage 110 on which the exposure target substrate 120 is seated. Floor.

That is, when the detecting unit 130 is fixed to the exposing unit 140, only the platform 110 can be moved. Conversely, when the platform 110 is fixed, the detecting unit 130 and the exposing unit 140 can be moved, or the detecting unit 130, the exposing unit 140, and the platform. 110 can be moved.

Further, the exposure target substrate 120 generally includes a plurality of stripes 125 in which the plurality of substrate units 125a are disposed, as shown in FIG.

In this case, the area including the area of the block 125 (with the substrate unit 125a disposed therein) is the exposure area 120b where the exposure is located, and the alignment mark 120a is preferably formed in the substrate area instead of the exposure area 120b.

Furthermore, the exposure system 100 according to the preferred embodiment may further include an input unit (not shown) capable of inputting commands for performing an exposure process, and an output unit (not shown) for displaying the progress of the exposure process. . The exposure system 100 may include an input/output unit (not shown) in which an input unit (not shown) and an output unit (not shown) are integrated with each other, but is not particularly limited thereto.

Exposure method

Figure 2 is a flow chart for describing an exposure method in accordance with a preferred embodiment of the present invention. Hereinafter, referring to Fig. 2, an exposure method according to a preferred embodiment of the present invention will be described.

Referring to FIG. 2, first, the exposure target substrate 120 is provided (S201).

An alignment mark 120a is formed on the provided exposure target substrate 120. In the preferred embodiment, the alignment mark 120a is preferably formed in a region other than the block 125 (where the exposure target substrate 120 is exposed), as shown in FIG.

The exposure target substrate 120 may include a plurality of blocks 125 in which the plurality of substrate units 125a are disposed, as shown in FIG. 1, but is not particularly limited thereto.

The exposure target substrate 120 may be a printed circuit board or a semiconductor substrate, but is not particularly limited thereto.

Next, the alignment mark 120a formed on the supplied exposure target substrate 120 is detected (S203).

In the preferred embodiment, the alignment mark 120a can be detected using a camera device including a photographic device, and the photographic device can be a CCD, but is not particularly limited thereto.

In this case, when the alignment mark 120a is detected, the exposure target substrate 120 may be moved while the camera device is fixed, or the movable camera device may simultaneously fix the exposure target substrate 120, or both the exposure target substrate 120 and the camera device may be moved.

Next, the actual coordinate data of each detected alignment mask 120a is calculated (S205) and the reference coordinate data of the reference exposure mask is compared and the actual coordinate data is calculated to generate a reference for matching the actual coordinate data by the correction. The exposure mask obtained by the mask is exposed (S207).

In this case, the actual coordinate data can be calculated using the distance information of the detected alignment mark 120a leaving the predetermined reference point. Similarly, The use of the reference point and the moving distance to obtain the coordinates is a prior art, and thus a detailed description thereof will be omitted.

Here, the reference exposure mask is an exposure mask having a scale coincident with the exposure region 120b (the exposure target substrate 120 is exposed here), and the exposure target substrate 120 is in an original state in which no correction occurs.

The reference exposure mask is preferably stored in the storage unit 160 of FIG. 1 as a reference coordinate material for each substrate product.

Next, the substrate correction amount is calculated by calculating the actual coordinate data and the reference coordinate data (S209).

In this case, the step of calculating the substrate correction amount may include calculating a coordinate difference value between the coordinates of the coordinates of the actual coordinate data and the coordinates of the corresponding reference coordinates.

For example, the coordinate difference value is the coordinate distance of the actual coordinates a', b', c', and d' of the exposure target substrate 120 and the corresponding reference coordinates a, b, c, and d, as shown in Fig. 3.

That is, the coordinate difference value is the coordinate distance between the actual coordinate a' and the reference coordinate a, the coordinate distance between the actual coordinate b' and the reference coordinate b, the coordinate distance between the actual coordinate c' and the reference coordinate c, and the actual coordinate d' and Refer to the coordinate distance of coordinate d.

For example, in Fig. 3, the coordinate distance between the actual coordinate a' and the corresponding reference coordinate a can be obtained by Equation 1. The remaining coordinates of the actual coordinates and the reference coordinates can also be obtained by substituting the corresponding coordinates in Equation 1 below.

As described above, the coordinate difference is obtained as a data which can be used to determine in detail which part of the substrate is to be corrected and its correction amount.

Further, the calculating step of the substrate correction amount may include calculating a distance difference, which is a distance between a coordinate pitch of the actual coordinate data and a corresponding reference coordinate pitch.

Finding the difference in distance can be calculated by separately calculating the following actual coordinate spacing: R ₁ (distance from a' to b'), R ₂ (distance from a' to c'), R ₃ (from c' to d 'distance', R ₄ (distance from b' to d'), R ₅ (distance from a' to d') and R ₆ (distance from b' to c') to the following reference coordinate spacing: S ₁ (distance from a to b), S ₂ (distance from a to c), S ₃ (distance from c to d), S ₄ (distance from b to d), S ₅ (from a to Distance of d) and S ₆ (distance from b to c), that is, R ₁ -S ₁ , R ₂ -S ₂ , R ₃ -S ₃ , R ₄ -S ₄ , R ₅ -S ₅ And R ₆ -S ₆ .

The distance between the actual coordinates and the reference coordinates can also be obtained by substituting the corresponding coordinates in Equation 1 above.

The distance difference is information that can be used to monitor the entire scale of the substrate to be changed to that form.

Next, the number of exposure zones matching the substrate correction amount is taken out by the storage unit 160 to generate an exposure mask divided into as many exposure zones as the exposure zones (S211).

The number of exposure zones is the number of exposure zones 120b (the exposure target substrate 120 is exposed here), as shown in FIG. 4, for example, when the target substrate is exposed When the correction amount of 120 is classified into A, B, and C, the correction amount applied to the exposure partition in the range of A to B is applied to the exposure target substrate 120 by 4, and the exposure division is used in the correction range of B to C. The number applied to the exposure target substrate 120 is 8, and the number of exposure sections to be applied to the exposure target substrate 120 with a correction amount of C or more is 16.

In this case, 4 partitions, 8 partitions, and 16 visions are examples to help understand and the number of exposure partitions is not limited to this and the exposure is divided into 4 partitions, 8 partitions, and An embodiment of 16 partitions is shown in Figures 5 through 7.

As shown in FIGS. 5 to 7, the partitions can be realized based on the alignment marks 120a formed on the exposure target substrate 120, but are not particularly limited thereto.

In this case, the step of generating the exposure mask may include: placing the exposure mask, wherein the exposure area of the exposure target substrate 120 is divided into as many as the exposure area on the exposure target substrate 120 and is formed on the exposure target The alignment marks on the substrate 120 match the alignment marks for the respective sections of the exposure mask.

That is, since the alignment marks for the respective sections of the exposure mask are each matched with the corresponding alignment marks of the exposure target substrate 120, it is possible to match them more accurately.

For example, as shown in FIG. 4, when the substrate correction amount is low, the number of exposure zones is reduced, so that the matching power is slightly smaller, but the number of exposure zones is small, thereby shortening the matching time and reducing the operation time to improve the operation efficiency. And when the substrate correction amount is high, the number of exposure partitions increases, The matching power is made high, but the number of exposure zones is large, so that the alignment time becomes long and the operation time is increased to be somewhat deteriorated in operational efficiency.

Therefore, it is important to improve the operational efficiency while increasing the matching power by allocating the optimum number of exposure zones depending on the substrate correction amount. It is preferable to calculate the optimal number of exposure zones for matching the correction amounts of the respective substrates based on the data obtained by a plurality of experiments in the prior art, and the amount of correction for each substrate, and the optimal exposure zone for calculating the correction amount of the substrate is matched in advance. The quantity is preferably stored in the storage unit 160.

Further, it is preferable that the substrate correction amount including the coordinate difference value and the distance difference calculated in the above manner is stored in the storage unit 160 for each of the exposure target substrates 120.

As described above, by matching and storing the substrate correction amount of each substrate product and the number of exposure zones matching and storing the correction amount of each substrate, the optimal number of exposure zones based on the storage history can be taken out and the same product can be exposed immediately after application. It is not necessary to calculate a new correction amount for the substrate.

Next, the exposure process is completed using the generated exposure mask (S213).

Since the exposure process is a well-known technique in the art, a detailed description thereof will be omitted. After the exposure process is completed, the back-end process, including the development process, can be performed.

According to a preferred embodiment of the present invention, by comparing the coordinates of the actual substrate with the reference coordinates, the exposure area of the substrate is appropriately divided and exposed according to the calculated correction amount to achieve more accurate exposure, thereby minimizing the generation of the eccentric amount. .

According to another preferred embodiment of the present invention, the exposure of the substrate is improved by increasing the number of exposure zones when the correction amount of the substrate is large and reducing the number of exposure zones and applying the number of exposure zones to thereby improve matching power and efficiently manage Operating time.

Although the embodiments relating to the exposure system and the exposure method of the present invention have been disclosed for illustrative purposes, those of ordinary skill in the art will appreciate that many different modifications, additions, and substitutions are possible without departing from the disclosure. The scope and spirit of the invention is set forth in the appended claims.

Accordingly, such modifications, additions, and substitutions are also to be understood as falling within the scope of the present invention.

100‧‧‧Exposure system

110‧‧‧ platform

120‧‧‧Exposure target substrate

120a‧‧‧ alignment mark

120b‧‧‧Exposure zone

125‧‧‧ Block

125a‧‧‧Substrate unit

130‧‧‧Detection unit

140‧‧‧Exposure unit

150‧‧‧Control unit

160‧‧‧storage unit

170‧‧‧ drive unit

S201‧‧‧ input substrate

S203‧‧‧Detecting alignment marks formed on the input substrate

S205‧‧‧ Calculate the actual coordinate data of each detected alignment mark

S207‧‧‧Revising the reference exposure mask by comparing the reference coordinate data of the reference exposure mask with the actual coordinate data to match the actual coordinate data

S209‧‧‧ Calculate the coordinate difference between the actual coordinate and the reference coordinate and the difference between the actual coordinate spacing and the reference coordinate spacing

S211‧‧‧ Assign the number of exposure zones matched according to the coordinate difference and the distance difference

S213‧‧‧ Exposing the substrate by applying the number of allocated exposure zones

X, Y‧‧ direction

Rx, Sx‧‧‧ distance

1 is a schematic configuration diagram for describing a configuration of an exposure system according to a preferred embodiment of the present invention; and FIG. 2 is a flow chart for describing an exposure method according to a preferred embodiment of the present invention; 3 is a diagram for describing actual coordinate data and reference coordinate data in an exposure method according to a preferred embodiment of the present invention; and FIG. 4 is for describing in an exposure method according to a preferred embodiment of the present invention. The number of exposure zones depends on the chart of the distribution of the correction amount; FIG. 5 is a diagram for describing an example of dividing into four exposure zones in the exposure method according to a preferred embodiment of the present invention; FIG. 6 is a diagram according to the present invention. A preferred embodiment for describing an example of dividing into eight exposure regions in an exposure method; Figure 7 is a diagram for describing an example of dividing into 16 exposure regions in an exposure method in accordance with a preferred embodiment of the present invention.

100‧‧‧Exposure system

110‧‧‧ platform

120‧‧‧Exposure target substrate

120a‧‧‧ alignment mark

120b‧‧‧Exposure zone

125‧‧‧ Block

125a‧‧‧Substrate unit

130‧‧‧Detection unit

140‧‧‧Exposure unit

150‧‧‧Control unit

160‧‧‧storage unit

170‧‧‧ drive unit

X, Y‧‧ direction

Claims (19)

An exposure system includes: a detecting unit that detects an alignment mark formed on a substrate; and a storage unit that stores reference coordinate data of a reference exposure mask placed on the substrate and an exposure that matches a correction amount of each substrate The number of partitions; the control unit calculates the actual coordinate data of each alignment mark by detecting the detection unit, and calculates the substrate correction amount by comparing the reference coordinate data with the calculated actual coordinate data, by using the storage unit The number of exposure zones matching the substrate correction amount is taken out to generate an exposure mask divided into as many as the number of exposure zones; and the exposure unit performs exposure using the exposure mask generated by the control unit. The exposure system of claim 1, further comprising a platform on which the substrate is seated. The exposure system of claim 2, further comprising a driving unit that moves the platform in the X direction or the Y direction according to the control of the control unit. The exposure system of claim 1, wherein the substrate correction amount comprises a coordinate difference between a coordinate of the coordinate of the actual coordinate data and a coordinate of the corresponding reference coordinate. The exposure system of claim 1, wherein the substrate correction amount includes a distance difference between a coordinate pitch of the actual coordinate data and a corresponding reference coordinate pitch. The exposure system of claim 1, wherein the control unit matches the substrate correction amount of each substrate product and stores the matched substrate correction amount in the storage unit. The exposure system of claim 1, wherein the number of exposure zones is proportional to the substrate correction amount. The exposure system of claim 1, wherein the detection unit comprises a camera device having a camera device. The exposure system of claim 8, wherein the camera device is a charge coupled device (CCD). The exposure system of claim 1, wherein the control unit uses the information of the distance of the alignment mark from the predetermined reference point to calculate the actual coordinate data. The exposure system of claim 1, wherein the control unit divides the exposure area of the substrate into as many as the exposure exposure zones, and generates alignment marks of each of the exposure zones. An alignment mask that is formed on the substrate matches the exposure mask and transmits the resulting exposure mask to the exposure unit. An exposure method comprising the steps of: providing a substrate with an alignment mark to an exposure device; detecting the alignment marks with the exposure device and calculating actual coordinate data of the detected alignment marks; Calculating the substrate correction amount by calculating the reference coordinate data of the reference exposure mask placed on the substrate and calculating the actual coordinate data; An exposure mask that is divided into as many exposure zones as the exposure zones is generated by extracting the number of exposure zones that match the calculated substrate correction amount from the previously stored information; and exposing the substrate using the exposure mask. The exposure method of claim 12, wherein the calculating step of the correction amount comprises: calculating a coordinate difference between a coordinate of the actual coordinate data and a coordinate distance of the corresponding reference coordinate. The exposure method of claim 12, wherein the calculating step of the correction amount comprises: calculating a distance difference between a coordinate distance of the actual coordinate data and a corresponding reference coordinate distance. The exposure method of claim 12, wherein the calculating step of the correction amount further comprises: generating a corrected exposure mask obtained by modifying the reference exposure mask to compare the reference coordinate data with the The actual coordinate data is used to match the actual coordinate data. The exposure method of claim 12, further comprising the step of: matching the calculated substrate correction amount for each substrate product and storing the matched substrate correction amount after the correction amount calculation step. The exposure method of claim 12, wherein the number of exposure zones is proportional to the substrate correction amount. The exposure method of claim 12, wherein the calculating step of the actual coordinate data is performed using information of the distance of the detected alignment mark from the predetermined reference point. The exposure method of claim 12, wherein the exposure method The step of generating the light mask includes: placing an exposure mask, wherein the exposed area of the substrate is divided into as many as the exposed sections on the substrate; and matching the alignment marks formed on the substrate Alignment marks with the various sections for the exposure mask.