TW201251256A - A power receiver and a contactless electrical power transmission system using same - Google Patents

Abstract

A power receiver 20 in a contactless electrical power transmission system 100 comprises a power-receive antenna circuit 32 which receives electrical power transmitted from a power transfer 10, a rectifier circuit 40 which rectifies electrical power received by the power-receive antenna circuit 32, a frequency-adjusting circuit 70 antenna circuit 32 and a driving circuit 80 which drives the frequency-adjusting circuit 70. The power-receive antenna circuit 32 has two terminals La, Lb. The frequency-adjusting circuit 70 has a circuit structure which is symmetric about a center of circuit and is connected between the terminals La, Lb. The rectifier circuit 40 is a single-phase bridge rectifier circuit. A ground terminal of the rectifier circuit 40 is connected with the center of circuit (the center tap CT) of the frequency-adjusting circuit 70.

Description

201251256 VI. Description of the Invention: [Technical Field to Be Invented by the Invention] [0 0 〇1] The present invention relates to a type of contact-type power transmission between a power receiving device such as a charging and crying electronic device. The system, especially regarding the force of the connection [prior technology] [0 0 〇 2] transmission from the if power supply device to the multiple power receiving device with non-contact power - as the rectification power = ί: (10) [patent Document [1] [0 0 0 3] Patent Document 1 Japanese Top Publication, Implementation _ (4) [Disclosure] [Problems to be Solved by the Invention] [◦ 0 0 4], etc., the power receiving device of Patent Document 1 , the use of electricity is inefficient [0 0 0 5] The purpose of the invention is to provide a kind of device that can be used to improve the force. [Technical means for solving the problem] 201251256 [00〇6] The first power receiving device provided by the invention is provided with the device power receiving device received by the self-power feeding circuit in the ϊί-contact power transmission system a vibrating capacitor; a rectifying circuit, the power receiving antenna antenna circuit: a makeup stream, a frequency converting circuit for converting the power receiving circuit; a rate used, and a driving circuit for driving the frequency conversion of the power receiving antenna circuit having 2 2 terminals; 2 between the terminals of the device; ^ 27' of the power receiving antenna circuit;; ^ connector terminal 'rounds the terminal separately, outputs the rectified DC electric connection, connects the private sub-; and rectifies the frequency The conversion circuit is provided; the terminal of the road is connected to the flute? Reacting, - knowing that the other terminal of the power receiving antenna is connected; and the other circuit of the power receiving antenna circuit and the second circuit are connected to the first circuit The open circuit has a power tap that is symmetrical to the center tap, and the head ground terminal is connected; the semiconductor open circuit is (10). Out of the sub-connection and in response to the DC dust, the [00 0 7] is set to 'the second power of the hairpin, such as the first electric street, the first impedance and the second impedance are equal to each other. The capacitance of the electrostatic capacitance [0008] receives the third power receiving device provided by ίί: ir, such as the first or second power conversion circuit, and if the voltage from the rectifying wheel (four) is equal to the 201251256, the semiconductor switch is made The circuit is 0N. [0009] The fourth power receiving device provided by the present invention, such as the third power receiving device iS: the circuit is a sinusoidal diode for voltage fluctuation sensing; [〇^"〇"°哀稽纳— The breakdown voltage of the polar body. The fifth power receiving device provided by the present invention is connected to the semiconductor switching circuit as the fourth power receiving anode. In the second power receiving device of the present invention, the fourth power receiving device is connected to the second power receiving device, and the dynamic voltage generating circuit is driven by the body of the semiconductor device. Power Mei set, (4) 6 power receiving and generating circuit 'has a hysteresis in the output pin. Set, =, 'She mentions (4) δ electric domain coffee, such as the 6th power receiving device drive 33 Kaina diode collapses when the pulse is used as the two hair, the purchasing power - power receiving and returning circuit, production seam Quasi-electrical house, circuit with a conductor. _Jifeng·and the rectified DC power ^ [0014] 201251256 bis The first 1G power receiving device, such as the 1st to 8th - shooting 2 yue qing _d Shi ci 5 Hai 2 The interpoles of the FETs are electrically connected to each other; the sources of the two FETs are connected to each other; 'from the connection point between the sources. In addition, the present invention provides a power receiving device of a U-ray, wherein, the switching circuit of any one of the first to the eighth has at least two ηρη-type bipolar electric bodies. The two bipolar transistors The bases are mutually electrically positive, and the emitters of the two bipolar transistors are connected to each other; , , : a heart tap, connected from the emitter [0016] In addition, the present invention provides a third contactless 11: The power receiving device and the device are provided: [First effect of the present invention] [0017] According to the present description, the single-phase bridge rectifier circuit a♦ is used to improve the utilization efficiency of the received power. , ', Xiandian. Hunt this, [0018] to have a circuit circuit that is symmetrical to the t-core tap. In addition, 'the power receiving antenna circuit converts the electric power rate (positive component β negative waveform (negative component) into the positive waveform receiving frequency is the resonant frequency of the resonant circuit, and 々乂ι, the power receiving antenna of the electric power Circuit. The oscillating circuit includes receiving power [0019] 201251256 Connecting the semiconductor of the frequency converting circuit to the ground terminal of the rectifier circuit (also the ground potential of the rectified voltage generated by the circuit midpoint (center tap) circuit of the circuit Therefore, the potential of the center tap and the driving of the rectifying circuit are used to prepare another two-pass). Therefore, it is not necessary to open the [0020] % source system for the semiconductor. The use of the components for dynamic sensing, thereby comparing the change of the DC voltage after rectification, and easily controlling the DC voltage division after the frequency conversion electric current & [Embodiment] [Implementation] MODE FOR CARRYING OUT THE INVENTION [1st Embodiment] Referring to Fig. 1 'A first embodiment of the present invention, a non-contact charger or the like is provided, and a contact type power transmission is provided. The power receiving device 2 that transmits the power from the system 1 and the self-powered device 1〇[0023], and the power supply device are provided with the power supply antenna circuit 12 ^2, force; and control unit [0 0 24] ', the power receiving device 20 used for the parental magnetic field, includes: the power transmitted from the power connection device 10; the capacitor is crying, the antenna circuit 32, receiving the self-powered Between the two terminals La and Lb; the rectified electric path is rectified by the power received by the power receiving antenna circuit 32, and the flat ^=4〇==the force receiving antenna circuit is slid; the negative _, the supply is emotional The rectified electric power is connected to the power connection in the antenna circuit 32; the conversion circuit is provided for converting the electric frequency conversion circuit 7〇. This constitutes a resonance of the towel, ', and the purchased circuit 80, the driver 34, and the frequency conversion circuit 70. The power connection φ of the line circuit 32 in the two-capacitance J-force receiving antenna circuit 32 is the most completely received frequency of the 201251256 force of the substantial _ rate. [0025] The rectifier circuit of the present embodiment is 〇. Bridge rectifier circuit The two terminals L input terminals Via and Vib of the single-phase force receiving antenna circuit 32, which are composed of four diodes, are respectively connected to the DC-reacted DCs that are rectified by the output. The rectifier circuit 40 has a DC. The grounding of the grounding potential of the voltage and the % after the output rectification are capacitors, and the two ends of the voltage are connected to the rectifying circuit of the embodiment of the present invention, and the sub-Vd and the ground terminal GND are connected. The load 60 is simulated, and the power converter is mounted. The system load. Cang Gong sighs the electronic machine of the 20th DC-DC. If the load 60 is in the state of heavy load, the electric condition becomes negative, negative load or heavy load. Force receiving frequency and power supply device 1 side] Efficiency is the most important (the initial power invitation becomes too high. This - situation, the actual ^ load 60 becomes lighter when the power receiving electric power receives the electric dust reduction, and the conversion frequency = The coin 'supplied to the state of the resonant electric Hi path 7G of the power receiving antenna circuit 32 of the load 60, thereby including the initial 値 offset. Thereby, the power connection [, /, the vibration frequency (power receiving frequency) from [ 0 0 27] I does not become higher than necessary. In detail, the frequency 72a, the second impedance 72b, and the half-conversion circuit 7A of the present embodiment include: the first impedance melon and the second impedance 72b are electrically connected, And the resistor 76. The impedance of the first impedance of the impedance 72a is connected to the electrostatic capacitance of the power receiving antenna circuit 2. The end of the impedance 72b is connected to the power receiving antenna 32, and the second body is switched. 74, connected to the Lb phase of the ith resistor 32. The other end of the semiconductor, the semiconductor switch circuit 74, and the CT of the second impedance 72b, and has the center of the heart of the center tap CT The tap solution 'frequency conversion circuit 7G also has the opposite power, = t is the same as the power 74 of the center tap CT) of symmetrical '= condition, is generated for the semiconductor switch of the semiconductor switching circuit 74 into. Resistor 76, used for 'center tap ct', and rectification circuit form 201251256 [0028] Figure, conductor switch circuit Μ, with 2 tender gifts to serve the effect of the crystal gamma, can ° such Cong 4a The state has a connection between the idle poles G of the inscribed two 炻S^74b, and the sources s°盥πττ of the FETs 74a, 74b are connected. The center tap CT described above is taken from the connection point of the source 74h of the FET 74a and the source of the M Vi μ ώ 。. A resistor 76 is connected between the source S of the FETs 74a, 74b and the gate g. [0029] The frequency switching circuit 70' of j is when the FETs 74a, 74b are ON.

= rate = 0 is the same as 7 = the specific circuit of W, , is a circuit that connects several of the FETs 74a, 74b and the second impedance. On the other hand, the capacitance and the first impedance melon and the second resistance 4 are different in the resistance between the terminals La and Lb of the power receiving antenna circuit 32. In the present embodiment, as described above, the weight t and the power f% power receiving efficiency are the highest, so that the FETs 74a and 74 intentionally reduce the power receiving efficiency. , J Tian [0030] Phased circuit 80 'determines under what circumstances drive the frequency conversion circuit 7 半 semi-conducting == ΐ - drive circuit 80, sense rectified DC rough ii and enter the lamp + conductor switch The on/off switching of circuit 74. [0031] 'As understood from now on, the drive circuit 80 is connected between the output terminal Vd of the rectifier circuit 4A and the semiconductor switch circuit 74. Specifically, this is

= motion = 80, which consists only of the numerometric two s for the sense of change of the DC after rectification. The cathode of the Zener ZDs is connected to the rectified input vd of the rectifier circuit 40, and the anode of the Zener diode ZDs is connected to the gate of the semiconductor: the gate G of the H FETs 74a, 74b. "^, 201251256 [0032] After rectifying the DC kitchen, the voltage is above the breakdown voltage of the Zener diode 2D (also the rate conversion circuit 7〇, in the belt / Bayer self-driving circuit 80 When the voltage is supplied to the frequency, a voltage is generated across the two ends of the resistor 76. Here, in the present embodiment, the gate voltage of the Ff is greater than or equal to the gate voltage Vgs, and the source of the gate is the deer of the Zener diode ZDs. The main ♦ H & is 〇 N. In the present embodiment, the power receiving voltage (four) force receives the voltage, so [0033] the frequency is reduced from the initial 値 to reduce the received power. In the negative state, even if the power supply is high, the power is received. Electric shape (b). Force receiving electric two Ai Chuan is more than necessary [0034] (Different 2 implementation 1 form) 102, except / power connection! Moon-shaped non-contact power transmission system ί f1 ^ can The description of the components of the non-contact power __^= is omitted, that is, the following slanting test is performed, and the difference between the actions is Wei Xinggang. The squat circuit 82 and the corresponding [0035] are as shown in FIG. The driving circuit 82 is provided with: a meal, a second-order gamma, and a _ generation, with a circuit 92 The diode ZDs are gambling, and the driving power of f ^ (in the present embodiment, the FET 74a circuit 74 = the same applies to the cathode of the Zener diode ZDs). The cathode and the rectifying output terminal of the semiconductor diode are: ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ It is also used as the transistor ΐ1τΓ, that is, between the base of the rectified DC electric body ηη and the ground; '==;^ and 曰2, 2 between the electric crystal ground. The emitter of the ferrule of the base 盥 日 与 is connected to the collector of the transistor Tr2; the cathode of the Z ϋ 'ZDP is connected to the pole and the ground and the ground. 74 phase connection ; connection; 纳 二 【 【 [0 0 3 7] 稽 — 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极 极The electricity for grounding is the case where the electric crystal is supplied to the transistor w _. The voltage on the 4 Λϋχ, when the Zener diode ZDs collapses, the supply makes the electric current =·^4, in order to make a selection. The electric day Trl is the voltage of the ON method [0038] The crystal % is 〇n, the electric ^tP.R3, ° ! ί5 The resistance milk is larger. In addition, the resistance R5 is set. 12 201251256 is much smaller than the resistance R2. Specifically, when IY2 is 0FF, the transistor M is emitted and the transistor is =, and the electricity generated at both ends of R5 is '==1 θ, 糸乂 from the transistor Tr2 flows into the resistor R5 ++, ώ ci, and therefore, the emitter of the transistor Tr1 is electrically determined.

The time is different. ® This, transistor T f H^: when the body Trl is 0N and is 〇FF

Time (ie, electricity from. (4) is ON

Turns OFF (that is, the power _ ^ differs from the transistor 0 from 0N [0 0 3 9] to 0). In the present embodiment, the electric i at this time is set to be more than half of the electric power. ON and the necessary electrical calendar is lower. Therefore, the conductor switching circuit 74 maintains the initial rate. When the daily exposure Tr2 is 0N, the power receiving frequency [0040] If the JDs of the Zener diode collapses and the transistor is determined by the transistor 2, the battery age is determined by the second shop. The nano-polar body can make the semiconductor circuit in a true shape, and the diode ZDp determines the light-supply ^' to satisfy the sr. N 'Execution for reducing power receiving power [0041] As described above, since the voltage is relatively small when the transistor Tr2 is 〇FF, the transistor Tr1 required for the electric TM generated at both ends of the transistor Tr1 The base-to-e^^^===================================================================================================== Trl becomes 〇FF, Thunder Tr9 material or ηνΓ BE—becomes a small peak with a π μ仏λ i body and becomes 〇N. That is, the driving voltage generates an input of the private path 92 (the phenomenon of applying the j to the base of the transistor m. Therefore, it is not the reaction that the power receiving frequency is restored after the power receiving is reduced by the second=== ; ls» [0042] In this embodiment, the output of the driving voltage generating circuit 92 is hysteresis, so that the semiconductor switching circuit 74' of the frequency conversion is broken when the Zener diode ZDs collapses. Since the effect of the power reception fresh adjustment occurs, the voltage is supplied to a certain voltage. Therefore, according to the embodiment, the semiconductor switch circuit 74 can be driven. [0043] In addition, if the rectified DC voltage is When the value becomes extremely high, there is a fear that the semiconductor switching circuit 74 is damaged. Therefore, in the present embodiment, the breakdown voltage of the Zener diode 2 is lower than that of the FETs 74a and 74b constituting the semiconductor switching circuit 74. Therefore, even if the DC voltage after rectification is gradually increased, it is possible to avoid damage caused by applying a high voltage to the FE keels 74a and 74b. [0 044] (Third embodiment) Referring to Fig. 4, In addition to the configuration of the drive circuit 84 of the power receiving device 24, the non-contact power transmission system 1A' of the third embodiment of the present invention includes the non-contact power transmission system 100 of the first embodiment. 1) The same components as those in FIG. 1 and FIG. 4 are denoted by the same reference numerals, and the description of the components is omitted. That is, only the difference between the drive circuit 84 and the operation thereof will be described below.驱动 [0045] The drive circuit 84 of the present embodiment is provided with a voltage generating circuit 94 for driving the 201251256 as in the second embodiment. However, the driving voltage generating circuit 92 of the second and second modes is compared with The second real-time turn-off circuit %, ==94, which is a semiconductor that supplies a voltage pulse to the frequency conversion electric (4) [0 0 4 6] -";^/rRr4rcr t: ;r 〇ρι ZD2. 00 C1, and 2 The singular diode ZD [0 0 4 7] is the discharge voltage circuit, the voltage of the partial pressure is supplied to the lower position of the lower part + the output of the milk is also suppressed by the self-dividing circuit (10) 【0 0 48】 〇p^Rr^tT,R^ 5 ^ The moment of Shimi T Shape wave product;, into a 3 circuit. In the integration circuit will be used from [0049] through the electric large ^0P3 as a comparator. Jenus diode melon - collapse 〇? 3 reference electricity == and the pulse waveform secret η , pulse width touch [〇〇5〇] 15 201251256 Receive S change ίί: The semiconductor switch circuit 74 is pulse-driven, and the power can be [0051] (Fourth Embodiment) Secrets = Non-contact power transmission system The non-contact power transmission system of the first embodiment has a configuration other than the above. The constituent elements common to the drawings in Fig. 1 and Fig. 5 are denoted by the same reference numerals, and the differences between the operations and the like are omitted. Only the drive circuit 86 and the drive circuit 86 according to the [0 0 5 2] have a reference band reference voltage; and a hysteresis comparator 98, which generates a row semiconductor due to the dance base %. The switch circuit 74 is driven. '"Money® and rectified voltage application [0 0 5 3] kg, resistance R1 and electricity (four), constitute the power supply dust 2: the power of the road ^ knife firmly, as the reference voltage is supplied, Give the second crying two -^ ^ terminal: the resistor R3 and the electric follow-up, the composition will be "tTf when the electric current is higher" operational amplifier 0p so that the semi-conducting rate of $ 敕 0N 'f this 'implementation for reducing power receiving electricity After the electricity used by Li, the operational amplifier ορ, so that the semiconductor Ξ == F, is caused by the reduction of the power receiving voltage and the rectification of the bauxite. : This must be determined by the resistor R5. Also = 丨, Γ ~ Great for op has a post-Ping phenomenon. Thereby, it is possible to prevent the operational amplifier 〇p from operating due to a small turtle pressure difference such as noise. [0 0 5 4] 201251256 The present invention will be specifically described with reference to a plurality of embodiments, but the present invention is not limited to the embodiments. For example, in the above-described embodiment, the frequency conversion circuit 70 is a one-stage, but the circuit 7G is also connected in parallel. This - the wealth, can also make the frequency ί ΐ 时 读 并将 并将 并将 并将 并将 并将 并将 并将 并将 并将 并将 并将 并将 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 00 【 The crystals replace the FETs 74a, 74b. [0 0 5 7] ^^, as shown in Fig. 6, the frequency conversion circuit 17A includes: the first work resistance 172a, the second brother's impedance l72b 'the semiconductor switch circuit 174, the limit resistor 178. 1 towel, 筮! The yoke m Γ package and the current octa 2 / / 72a, the second impedance 172b and the resistor 176, the first resistor k 72a, the second impedance 72b and the resistor 76 are the same. [0058] 174 ^ ;77; ? ; 12 ^ ^ ^ 174a . B with each other and the base of the bipolar transistor 174b 曰浐 bipolar (four) crystal 174a of the emitter E and bipolar electricity 3 b = fE They are also electrically connected to each other, since they are connected to the _|; ZD has the same function. The current sense resistor 178, which is used in the bipolar transistor, and the 174 (four) base B is circulated [0059]. The semiconductor switch ♦ ΐ々1 u X μ + can be described as == In the above-described embodiment, the overvoltage of the power supply device is prevented from being the main target 201251256. However, the embodiment of the present invention is not limited thereto. In the fifth embodiment, the circuit constant is adjusted to output the electric dust after the rectification in the second to fourth embodiments. The circuit configuration can be compared with the second to fourth embodiments. ^ ^ 5) ' ^ W is rectified and used. "Pole body and smoothing capacitor are used to perform electricity. [0061] 正々丨[The maximum amount of the latter dust can be determined by the second pole. The collapse of the body z£)s is __ In addition, the 'drive generation circuit 92, 94 (refer to Figure 3 and Figure = =: there is hysteresis, so that the rectified voltage is maintained within a certain voltage range., eight [0062] ] (4 high 'f, the F-diode ZDs collapse, so that FET74a, the second test 3 4) is ON, the impedance is switched, and the voltage after rectification drops. 2 Low' then the load collapse is released, making the FET74a, 74b 0Fn After the rectification, the voltage rises. Therefore, the action keeps the impedance in a certain voltage range during the cycle. After the change of the machine, the voltage is [0063] accompanied by: 弋?, and is placed in the rectifier circuit 4. After that, check After the current is rectified, the voltage after rectification in the core is reduced by the voltage of the two poles. Therefore, the load of the older converter can be 60. & 仏 4 4 4 4 4 4 4 4 4 4 4 4 4 4 [0064] This configuration is capable of rotating a stable constant voltage, + way. In addition, the size of the irrelevant load can be changed to ^ wheel The electric load does not include the configuration of the voltage conversion unit. ' ', system of benefits, etc. [Industrial use] [0 0 6 5] The present invention can be applied, for example, to a portable camera such as a 5-position camera. The electric machine's storage tank 5 charge 2 razor and conveying system. Tian Hao, also the non-contact power used by the electrician 18 201251256 [Simple description of the diagram] [〇〇21] t% composition = meaning t invention first implementation The form of non-contact power value ~ Figure 2 shows the pn filial system 1 power receiving map ί contact power transmission system _ power supply and structure diagram. Brother 2 (four) evil non-contact power transmission system circuit (4) Configuration of the non-contact power transmission system according to the third embodiment of the present invention: FIG. 6 is a diagram showing a modification of the power supply (four) frequency machine circuit. [Main component symbol description] [0066] 10 power feeding device 12 power feeding antenna circuit 14 control unit 20, 22, 24, 26 power receiving device 32 power receiving antenna circuit 34 capacitor 2 rectifier circuit (single-phase bridge rectifier circuit) 50 advection circuit 60 7〇, 170 frequency conversion circuits 72a, 172a first impedance (capacitor) 72b, 172b second impedance (capacitor) 74, 174 semiconductor switching circuit 19 201251256 74a ' 74b FET 76, 176 resistor 80, 82, 84, 86 drive Circuit 92, 94 Drive Voltage Generation Circuit 96 Reference Voltage Generation Circuit 98 Hysteresis Comparator 100, 102, 104, 106 Contactless Power Transfer System 174a, 174b Bipolar Transistor 178 Current Limiting Resistor C1 Capacitor CT Center Tap GND Ground Terminal

La, Lb terminal ΟΡ, ΟΡ1~OP3 operational amplifier R1~R9 resistor

Trl, Tr2 transistor

Via, Vib input terminal

Vd rectified output terminal ZDp, ZDc, ZD Bu ZD2 Jenus diode ZDs (for sensing) Gena diode S source G gate 20

Claims (1)

201251256 VII. Patent application scope: 1. A power receiving device, the self-supplied electric circuit is connected to the antenna in the non-contact power transmission system; the resonance is suppressed; the rectifier circuit is connected to the power receiving antenna: : frequency 赖路' is used to transform the conversion circuit; receiving a v-rate, and a driving circuit for driving the frequency iff to the antenna circuit having two terminals; between the two terminals of the power receiving antenna circuit; = type rectifier circuit, has: wheel-in terminal, respectively, with the output terminal f, the output is straight through; the grounding terminal; and the rectifier wheel is equipped with the second-side of the power-receiving antenna The f: terminal and the second impedance=== off circuit that are connected to the power receiving antenna circuit are connected to the first resistance pin, and the semiconductor switching circuit has a towel as a % of the circuit, and a gossip-5 The center tap is a symmetrical circuit structure; the middle is connected to the knives, and the ground terminal is connected, and the conductor switch circuit becomes 01^r rain & sub-connected. The cause should be DC power. Loading . The power is pure as the first item of the power pure "set, 苴中, 41 ground and the h impedance for the quiet amount of capacitance of the money ^ ^ ^ ^: the second to receive ... where, the print order The semiconductor_circuit becomes 0 ί7 μ when it reaches the 疋値, the drive UM_, where, ', the 流 流 流 之 之 变动 咖 咖 ; ; ; 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 5. If the application of the patent scope is in item 4, the anode of the arsenal diode is placed at the same position as the object of the invention. The driving circuit is further provided with a smashing electric dust, wherein the connection to the singular diode is extremely virtual, and the driving circuit generates a circuit body collapse _ _ _ _ _ _ _ _ _ _ _ _ 7. If the scope of the patent application is item 6 ^=Electricity [:. The driving voltage generating circuit is in the wheel; in the German regulations, 8, if the application turns r_6 has a strict phenomenon. The driving circuit generates a circuit, and the material receiving device, wherein the driving electric ship gives the semiconductor switch device: when the inner diode collapses, the pulse is read as 9, and the driving circuit of the third item of the patent application has the following: The US standard Raymax breaks, the middle, and the hysteresis comparator, the circuit, which is used to generate the reference circuit I. The fascination and the rectified DC voltage drive 10, such as the power of the third paragraph of the patent scope, the half-read _ circuit has at least 2 N ^ F, Transistor, field effect transistor); (^ Effect δ Hai 2 The gates of the FETs are electrically connected to each other; the sources of the two FETs are connected to each other; the center tap is taken out from the connection point between the source and the source. ί1: The power receiving device according to claim 1 of the patent scope, wherein , :Ϊ?At least two types of bipolar transistors; the bases of the °R and the polar transistors are electrically connected to each other; the emitters of the two bipolar transistors are connected to each other; The connection point between the emitters is taken out. 12. A non-contact power transmission system having a power receiving device and a power feeding device as claimed in the scope of the patent application.