TW201250953A - Thermal conductive package unit ans frame structure thereof - Google Patents

Thermal conductive package unit ans frame structure thereof Download PDF

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Publication number
TW201250953A
TW201250953A TW100120603A TW100120603A TW201250953A TW 201250953 A TW201250953 A TW 201250953A TW 100120603 A TW100120603 A TW 100120603A TW 100120603 A TW100120603 A TW 100120603A TW 201250953 A TW201250953 A TW 201250953A
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TW
Taiwan
Prior art keywords
metal layer
metal
layer
conductive
emitting element
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TW100120603A
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Chinese (zh)
Inventor
Chia-Ming Sung
Fu-Sin Chen
Neng-Cheng Wang
Original Assignee
Lextar Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Lextar Electronics Corp filed Critical Lextar Electronics Corp
Priority to TW100120603A priority Critical patent/TW201250953A/en
Priority to CN2011101953330A priority patent/CN102832313A/en
Publication of TW201250953A publication Critical patent/TW201250953A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

A thermal conductive package unit includes a light emitting element, a metal frame and a molding compound. The metal frame has an indentation for receiving the light emitting element. The molding compound is filled into the indentation to cover the light emitting element. The metal frame includes a first metal layer, a insulating layer and a second metal layer. The first metal layer is laid inside the indentation and has an electrical connecting area and an internal connection sidewall. The second metal layer is laid outside the indentation and has a component disposing area and an external connection sidewall. The insulating layer is adhered between the first metal layer and the second metal layer, and electrically insulated between the electrical connecting area and the component disposing area. The internal connection sidewall and the external connection sidewall are laminated and extended obliquely around the electrical connecting area to form the indentation.

Description

201250953 1 W /Ο/ /ΓΛ 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種散熱結構，且特別是有關於一種 結合第一金屬層以及第二金屬層之散熱封裝單元及其支 架結構。 ~ 【先前技術】 隨著發光二極體的功率不斷地提高，在操作時常會伴 iW熱羞的累積，無法迅速地將熱排放到外界。常見的問題 是，溫度升高造成發光二極體的發光效率降低。因此，必 須加裝大型的散熱片或風扇來提高發光二極體的散熱效 能。 請參照第1圖，其繪示傳統上一種發光二極體之封裝 結構的示意圖。此封裝結構100包括一導電基板110、一 絕緣殼體120、一發光元件13〇以及一封裝膠體14〇。發 光元件130配置於導電基板11〇之晶片座112上並透^ 兩條導線132電性連接導電基板11〇之二金屬墊114、 116。然而，傳統的絕緣殼體12〇以射出成型的方式包覆 導電基板110的大部分周圍表面，導電基板11〇僅有一小 。[5刀面積可政熱，因此散熱效果不佳。此外，射出成型之 ，緣殼體120受限於玉程歸之材料特性，在高溫環境下 容易劣化而導致發光元件130之出光效率下降。另外，在 射出成型的過程中’絕緣殼體12〇與導電基板11〇因材質 特性不同而接合性不佳，往往造成防滲漏測試不合格。、 上述種種皆是採用絕緣殼體12〇所產生的問題，造成 201250953201250953 1 W /Ο/ /ΓΛ 6. Description of the Invention: [Technical Field] The present invention relates to a heat dissipation structure, and more particularly to a heat dissipation package unit combining a first metal layer and a second metal layer Its stent structure. ~ [Prior Art] As the power of the light-emitting diodes continues to increase, it often accumulates with the shyness of the iW during operation, and it is not possible to quickly discharge heat to the outside world. A common problem is that an increase in temperature causes a decrease in luminous efficiency of the light-emitting diode. Therefore, a large heat sink or fan must be installed to improve the heat dissipation performance of the LED. Please refer to FIG. 1 , which is a schematic diagram showing a conventional package structure of a light-emitting diode. The package structure 100 includes a conductive substrate 110, an insulative housing 120, a light emitting element 13A, and an encapsulant 14". The light-emitting element 130 is disposed on the wafer holder 112 of the conductive substrate 11 and is electrically connected to the two metal pads 114 and 116 of the conductive substrate 11 through the two wires 132. However, the conventional insulating case 12 包覆 covers most of the peripheral surface of the conductive substrate 110 in an injection molding manner, and the conductive substrate 11 is only small. [5 knife area can be politically hot, so the heat dissipation effect is not good. Further, in the case of injection molding, the edge case 120 is limited by the material properties of the jade, and is easily deteriorated in a high temperature environment, resulting in a decrease in the light extraction efficiency of the light-emitting element 130. Further, in the process of injection molding, the insulating case 12 and the conductive substrate 11 have poor bonding properties due to different material properties, and the leakage prevention test is often unacceptable. All of the above problems are caused by the use of the insulating case 12〇, resulting in 201250953

IW7677PA 發光二極體之封裝結構1〇〇 的發光效率降低，且散熱不佳。 【發明内容】 ^發明係有關於-種散熱封裝單元及其支架結構，且 結“-金屬層與第二金屬層做為金屬支面 積，以提高散熱效率。 ”、、面 1提出'種散熱支架結構，包括 -第-金屬層、—絕緣層以及一第二金屬層。第一金屬犀 具有-導電接合區以及—内接合壁。第二金屬層具有一^ 件配置區以及-外接合壁。絕緣層黏著於第—金屬層與第 -金屬層之間’且絕緣層電性隔離於導電接合區盘元件配 置區之間。内接合壁與外接合壁由導電接合區 地延伸並叠合在一起，以形成一凹槽。 回彳貝斜 根據本發明之另-方面’提出—種散熱封裝單元，其 包括-發光元件、一金屬支架以及一封膠。金屬支架具； -凹槽，用以容納發光元件。金屬支架包括一第二金屬 層、-絕緣層以及-第二金屬層。封膠填充於凹槽内，以 包覆發光元件。第一金屬層位於凹槽之内侧，並具有一導 電接合區以及-内接合壁。第二金屬層位於凹槽之外侧， 並具有-元件配置區以及-外接合壁。其中，絕緣層黏著 於第-金屬層與第二金制m緣層電性隔^於導 電接合區與元件配置區之間。内接合壁與外接合壁由導電 接合區之周圍傾斜地延伸並疊合在一起，以形成凹槽。封 膠填充於凹槽内。 9 為了對本發明之上述及其他方面有更佳的瞭解，下文 201250953The package structure of the IW7677PA light-emitting diode has a reduced luminous efficiency and poor heat dissipation. SUMMARY OF THE INVENTION The invention relates to a heat-dissipating package unit and a support structure thereof, and the junction "--metal layer and second metal layer are used as metal branch areas to improve heat dissipation efficiency." The support structure includes a -first metal layer, an insulating layer and a second metal layer. The first metal rhino has a conductive junction and an inner joint wall. The second metal layer has a configuration area and an outer joint wall. The insulating layer is adhered between the first metal layer and the first metal layer and the insulating layer is electrically isolated between the conductive element region of the conductive bonding region. The inner and outer joint walls extend from the electrically conductive joint and are superposed to form a recess. The present invention relates to a heat-dissipating package unit comprising a light-emitting element, a metal holder and a glue. a metal holder; a recess for receiving the light-emitting element. The metal bracket includes a second metal layer, an insulating layer, and a second metal layer. The sealant is filled in the recess to cover the light-emitting element. The first metal layer is located inside the recess and has a conductive land and an inner joint wall. The second metal layer is located on the outer side of the recess and has an element arrangement area and an outer joint wall. Wherein, the insulating layer is adhered to the first metal layer and the second gold m-edge layer is electrically separated between the conductive bonding region and the component arrangement region. The inner and outer joint walls extend obliquely from the periphery of the conductive joint and are superposed to form a groove. The sealant is filled in the groove. 9 In order to better understand the above and other aspects of the present invention, the following 201250953

TW7677PA 特舉較佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 本實施例之散熱封裝單元及其支架結構，係利用衝壓 的方式將二片金屬層製成具有凹杯形狀之金屬支架。二片 金屬層之間利用具有黏著性的絕緣材質貼合，並使二片金 屬層之間電性絕緣，以使成型後之金屬支架具有熱電分離 之特性。其中，發光元件可配置在其中一片金屬層上，且 該片金屬層的大部分面積均與外界接觸，故可提高散熱封 裝單疋的散熱效果。另外，發光元件可藉由二條導線與另 一片金屬層電性連接，用以接收外部電訊號，以使發光元 件因電致而發光。在一實施例中，發光元件例如以半導體 材料製作之發光二極體，其於ρ型半導體層與Ν型半導體 層相接處形成ΡΝ接面之活化層。當發光二極體的ρ極及Ν 極兩端施加電壓時’電子將與電洞結合於ΡΝ接面處，再 以光的形式發出。 以下係提出各種實施例進行詳細說明，實施例僅用以 作為範例說明’並非用以限縮本發明欲保護之範圍。 請參照第2Α〜2C圖’其分別繪示依照本發明一實施 例之散熱封裝單元及其金屬支架的上視圖、側視剖面圖及 底視圖。散熱封裝單元200包括一發光元件210、一金屬 支架220以及一封膠230。金屬支架220具有一凹槽222， 用以容納發光元件210。金屬支架220包括一第一金屬層 224、一絕緣層225以及一第二金屬層226。封膠23〇填充 於凹槽222内，以包覆發光元件210。第一金屬層224位 201250953TW7677PA exemplifies the preferred embodiment and is described in detail with reference to the following drawings: [Embodiment] The heat dissipation package unit and the bracket structure of the embodiment are formed by stamping two metal layers with a concave shape. Cup-shaped metal bracket. The two metal layers are bonded together by an adhesive insulating material, and the two metal layers are electrically insulated to make the formed metal stent have thermoelectric separation characteristics. Wherein, the light-emitting element can be disposed on one of the metal layers, and most of the area of the metal layer is in contact with the outside, so that the heat dissipation effect of the heat-dissipating package unit can be improved. In addition, the light-emitting element can be electrically connected to another metal layer by two wires for receiving an external electrical signal to cause the light-emitting element to emit light by electricity. In one embodiment, the light-emitting element is, for example, a light-emitting diode made of a semiconductor material, which forms an active layer of the splicing surface at the junction of the p-type semiconductor layer and the germanium-type semiconductor layer. When a voltage is applied across the p-pole and the z-th diode of the light-emitting diode, electrons are combined with the hole at the splicing surface and then emitted as light. The following is a detailed description of various embodiments, which are intended to be illustrative only and not to limit the scope of the invention. Referring to Figures 2 to 2C, respectively, a top view, a side cross-sectional view and a bottom view of a heat dissipation package unit and a metal holder thereof according to an embodiment of the present invention are shown. The heat dissipation package unit 200 includes a light emitting element 210, a metal bracket 220, and a glue 230. The metal bracket 220 has a recess 222 for receiving the light emitting element 210. The metal bracket 220 includes a first metal layer 224, an insulating layer 225, and a second metal layer 226. The sealant 23 is filled in the recess 222 to enclose the light-emitting element 210. First metal layer 224 bit 201250953

TW7677PA 於凹槽222之内側，並具有一導電接合區221a以及一内 接合壁221b。第二金屬層226位於凹槽222之外側，並具 有一元件配置區227以及一外接合壁226a。其中，絕緣層 225黏著於第一金屬層224與第二金屬層226之間，且絕 緣層225電性隔離於導電接合區221a與元件配置區227 之間。内接合壁221b與外接合壁226a由導電接合區221a 之周圍傾斜地延伸並疊合在一起，以形成凹槽222。也就 是說，凹槽222的内側為内接合壁221b，而凹槽222的外 側為外接合壁226a。 此外，散熱封裝單元200更包括一光反射層223，配 置於内接合壁221b上，並顯露出導電接合區221a。散熱 封裝單元200更包括一組導線212，用以電性連接發光元 件210。在本實施例中，光反射層223例如為高反射係數 之金屬鍍膜，以反射發光元件210所發出的光線。請參照 第1A〜1C圖，第一金屬層224包括一組電性端子228a、 228b，位於導電接合區221a中，並嵌合於第二金屬層226 内。此二電性端子228a、228b的一端分別顯露於第二金 屬層226的外部，用以接收外部電訊號。此二電性端子228 分別位於元件配置區227的相對兩侧，而每一導線212分 別電性連接於發光元件210與相對應的電性端子228a、 228b之間，以使發光元件210接收外部電訊號。 另外，發光元件210配置於元件配置區227上，而發 光元件210的底部與元件配置區227之間更可配置一黏著 層229，以使發光元件210黏著於元件配置區227上。在 本實施例中，發光元件210所產生的熱可經由第二金屬層 201250953 i w /υ / / r/\ 226向外擴散，避免熱累積在發光元件210内而影響發光 元件210的發光效率。再者，第二金屬層226為高導熱的 金屬，可將凹槽222底部的熱沿著外接合壁226a向外延 伸，利用外接合壁226a來增加散熱面積，進而提高整體 的散熱效率。 請參照第3A及3B圖，其分別繪示依照本發明一實施 例之雙層金屬支架的組裝步驟之示意圖。在第3A圖中， 第一金屬層224以及第二金屬層226未成型之前皆為一平 板狀。第一金屬層224與第二金屬層226可為相同或不同 的材質，例如銅或鋁。第一金屬層224具有相互分離之第 一導電部A1以及第二導電部A2。第一導電部A1與第二導 電部A2可經由衝壓或蝕刻的方式形成。第一導電部A1之 一端向下彎折而形成第一電性端子228a，而第二導電部 A2之一端向下彎折而形成第二電性端子228b。此外，第 二金屬層226相對於第一電性端子228a與第二電性端子 228b分別設有一第一貫孔B1以及一第二貫孔B2。第一貫 孔B1與第二貫孔B2可經由衝壓或蝕刻的方式形成。 在第3B圖中，第一電性端子228a可經由第一貫孔B1 嵌合於第二金屬層226内，而第二電性端子228b可經由 第二貫孔B2嵌合於第二金屬層226内。第一電性端子228a 與第二電性端子228b的一端分別顯露於第二金屬層226 的外部，以接收外部電訊號。 此外，絕緣層225黏著於第一金屬層224與第二金屬 層226之間，且絕緣層225電性隔離於導電接合區221a 與元件配置區227之間，以使成型後之金屬支架220具有 201250953The TW7677PA is inside the recess 222 and has a conductive land 221a and an inner joint wall 221b. The second metal layer 226 is located on the outer side of the recess 222 and has a component arrangement region 227 and an outer joint wall 226a. The insulating layer 225 is adhered between the first metal layer 224 and the second metal layer 226, and the insulating layer 225 is electrically isolated between the conductive bonding region 221a and the component arrangement region 227. The inner joint wall 221b and the outer joint wall 226a are obliquely extended and superposed by the circumference of the conductive joint region 221a to form the groove 222. That is, the inner side of the recess 222 is the inner joint wall 221b, and the outer side of the recess 222 is the outer joint wall 226a. In addition, the heat dissipation package unit 200 further includes a light reflecting layer 223 disposed on the inner joint wall 221b and exposing the conductive land 221a. The heat dissipation package unit 200 further includes a set of wires 212 for electrically connecting the light emitting elements 210. In the present embodiment, the light reflecting layer 223 is, for example, a metal plating film having a high reflection coefficient to reflect the light emitted from the light emitting element 210. Referring to FIGS. 1A-1C, the first metal layer 224 includes a set of electrical terminals 228a, 228b disposed in the conductive land 221a and embedded in the second metal layer 226. One ends of the two electrical terminals 228a, 228b are respectively exposed outside the second metal layer 226 for receiving external electrical signals. The two electrical terminals 228 are respectively located on opposite sides of the component arrangement area 227, and each of the wires 212 is electrically connected between the light emitting element 210 and the corresponding electrical terminal 228a, 228b, respectively, so that the light emitting element 210 receives the external portion. Telecommunications signal. In addition, the light-emitting element 210 is disposed on the component arrangement region 227, and an adhesive layer 229 is disposed between the bottom of the light-emitting component 210 and the component placement region 227 to adhere the light-emitting component 210 to the component placement region 227. In the present embodiment, the heat generated by the light-emitting element 210 can be diffused outward through the second metal layer 201250953 i w /υ / / r/\ 226, preventing heat from accumulating in the light-emitting element 210 and affecting the light-emitting efficiency of the light-emitting element 210. Furthermore, the second metal layer 226 is a highly thermally conductive metal, and the heat at the bottom of the recess 222 can be extended along the outer joint wall 226a, and the outer joint wall 226a is used to increase the heat dissipation area, thereby improving the overall heat dissipation efficiency. Please refer to FIGS. 3A and 3B, which are respectively schematic diagrams showing the assembly steps of the double metal stent according to an embodiment of the present invention. In Fig. 3A, the first metal layer 224 and the second metal layer 226 are all in a flat shape before being formed. The first metal layer 224 and the second metal layer 226 may be the same or different materials, such as copper or aluminum. The first metal layer 224 has a first conductive portion A1 and a second conductive portion A2 which are separated from each other. The first conductive portion A1 and the second conductive portion A2 may be formed by stamping or etching. One end of the first conductive portion A1 is bent downward to form a first electrical terminal 228a, and one end of the second conductive portion A2 is bent downward to form a second electrical terminal 228b. In addition, the second metal layer 226 is respectively provided with a first through hole B1 and a second through hole B2 with respect to the first electrical terminal 228a and the second electrical terminal 228b. The first and second through holes B1 and B2 may be formed by stamping or etching. In FIG. 3B, the first electrical terminal 228a can be fitted into the second metal layer 226 via the first through hole B1, and the second electrical terminal 228b can be fitted into the second metal layer via the second through hole B2. Within 226. One ends of the first electrical terminal 228a and the second electrical terminal 228b are respectively exposed outside the second metal layer 226 to receive an external electrical signal. In addition, the insulating layer 225 is adhered between the first metal layer 224 and the second metal layer 226, and the insulating layer 225 is electrically separated between the conductive bonding region 221a and the component arrangement region 227, so that the formed metal bracket 220 has 201250953

TW7677PA 熱電分離之特性。如第3B圖所示，利用衝壓的方式可將 相互貼合之第一金屬層224與第二金屬層226製成具有凹 杯形狀（凹槽222)之金屬支架220。金屬支架220的内 接合壁221b與外接合壁226a由導電接合區221a之周圍 傾斜地延伸並疊合在一起，並經由衝壓而形成一凹槽222。 之後，如第3B圖所示，發光元件210可藉由黏晶設 備固定於元件配置區227上，再經由打線機台分別將每一 條導線212電性連接於發光元件210與相對應之電性端子 228a、228b之間。最後，填入封膠230於凹槽222内，以 覆蓋發光元件210及此二導線212。 本發明上述實施例所揭露之散熱封裝單元及其支架 結構，係以絕緣層將二片金屬層相互貼合後，再以衝壓的 方式將二片金屬層製成具有凹杯形狀之金屬支架。絕緣層 可選用耐高溫、黏著性佳、絕緣效果好的矽膠，以使二金 屬層之間緊密貼合，以降低防滲漏測試不合格之風險，並 可改善工程塑膠劣化的問題。此外，金屬支架相對於習知 的絕緣殼體，可增加散熱封裝單元的散熱面積，並可避免 熱累積在發光元件内而影響發光元件的發光效率。 綜上所述，雖然本發明已以較佳實施例揭露如上，然 其並非用以限定本發明。本發明所屬技術領域中具有通常 知識者，在不脫離本發明之精神和範圍内，當可作各種之 更動與潤飾。因此，本發明之保護範圍當視後附之申請專 利範圍所界定者為準。 201250953 【圖式簡單說明】 第1圖繪示傳統上一種發光二極體之封裝結構的示 意圖。 第2A〜2C圖分別繪示依照本發明一實施例之散熱封 裝單元及其金屬支架的上視圖、側視剖面圖及底視圖。 第3A及3B圖分別繪示依照本發明一實施例之雙層金 屬支架的組裝步驟之示意圖。 【主要元件符號說明】 100 ： 封裝結構 110 : 導電基板 112 : 晶片座 114 ： 金屬塾 120 ： 絕緣殼體 130 ： 發光元件 140 : 封裝膠體 200 : 散熱封裝單元 210 ： 發光元件 212 ： 導線 220 : 金屬支架 222 : 凹槽 221a :導電接合區 221b :内接合壁 223 ： 光反射層 224 ： 第一金屬層 201250953TW7677PA thermoelectric separation characteristics. As shown in Fig. 3B, the first metal layer 224 and the second metal layer 226 which are bonded to each other can be formed into a metal holder 220 having a concave cup shape (groove 222) by means of punching. The inner joint wall 221b and the outer joint wall 226a of the metal bracket 220 are obliquely extended and overlapped by the circumference of the conductive joint portion 221a, and a recess 222 is formed by punching. Then, as shown in FIG. 3B, the light-emitting element 210 can be fixed to the component arrangement area 227 by a die bonding device, and then each wire 212 is electrically connected to the light-emitting element 210 and the corresponding electrical property via a wire bonding machine. Between the terminals 228a, 228b. Finally, the encapsulant 230 is filled in the recess 222 to cover the light emitting element 210 and the two wires 212. The heat dissipating package unit and the bracket structure thereof disclosed in the above embodiments of the present invention are formed by bonding two metal layers to each other with an insulating layer, and then forming two metal layers into a metal bracket having a concave cup shape by punching. Insulation layer Silicone with high temperature resistance, good adhesion and good insulation effect can be selected to make the two metal layers closely adhere to each other, so as to reduce the risk of unqualified leakage test and improve the deterioration of engineering plastics. In addition, the metal bracket can increase the heat dissipation area of the heat dissipation package unit relative to the conventional insulation case, and can avoid heat accumulation in the light emitting element and affect the light emission efficiency of the light emitting element. In the above, the present invention has been disclosed in the above preferred embodiments, but it is not intended to limit the present invention. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. 201250953 [Simplified Schematic] FIG. 1 is a schematic view showing a conventional package structure of a light-emitting diode. 2A to 2C are respectively a top view, a side cross-sectional view and a bottom view of a heat dissipation package unit and a metal holder thereof according to an embodiment of the present invention. 3A and 3B are schematic views respectively showing the assembling steps of the double-layer metal stent according to an embodiment of the present invention. [Main component symbol description] 100 : Package structure 110 : Conductive substrate 112 : Wafer holder 114 : Metal 塾 120 : Insulation case 130 : Light-emitting element 140 : Package colloid 200 : Heat dissipation package unit 210 : Light-emitting element 212 : Wire 220 : Metal Bracket 222: recess 221a: conductive land 221b: inner joint wall 223: light reflecting layer 224: first metal layer 201250953

TW7677PA 225 :絕緣層 226 :第二金屬層 226a :外接合壁 227 :元件配置區 228a、228b :電性端子 229 :黏著層 230 :封膠 A1 :第一導電部 A2 :第二導電部 B1 :第一貫孔 B2 :第二貫孔 11TW7677PA 225: insulating layer 226: second metal layer 226a: outer joint wall 227: component arrangement region 228a, 228b: electrical terminal 229: adhesive layer 230: sealant A1: first conductive portion A2: second conductive portion B1: First consistent hole B2: second through hole 11

Claims (1)

201250953 I W /υ/ /Γ/Λ 七 申請專利範圍： l'種散熱支架結構，包括： 第金屬層，具有一導電接合區以及一内接合壁; 一絕緣層；以及 第一金屬層，具有一元件配置區以及一外接合壁， 其中該絕緣層黏著於該第—金屬層與該第二金屬層之 間且。亥絕緣層電性隔離於該導電接合區與該元件配置區 1 S内接5壁與该外接合壁由該導電接合 斜地延伸並疊合在—起，以形成—凹槽。 ▲ 2·如申請專利範圍第μ所述之散熱支架結構，其 中该第-金屬層以及該第二金屬層以衝壓或㈣的方式 形成。 如申吻專利範圍第1項所述之散熱支架結構，其 中該第-金屬層包括—組電性端子，位於該導電接合區 中，並嵌合於該第二金屬層内，該組電性端子的—端^別 顯路於δ亥第 金屬層的外部。 4·如申請專利範圍第丨項所述之散熱支架結構，更 包括一光反射層，配置於該内接合壁上，並顯露出爷 接合區。 5. —種散熱封裝單元，包括： 一發光元件； 一金屬支架，具有一凹槽，用以容納該發光元件該 金屬支架包括： ~ 一第一金屬層，位於該凹槽之内側，並具有一 導電接合區以及一内接合壁； 12 201250953 I W /6/ /PA 一第二金屬層，位於該凹槽之外側，具有一元 件配置區以及一外接合壁，其中該絕緣層黏著於該第一 金屬層與料二金屬狀間’且該絕緣層f性隔離於該 導電接合區與該元件配置區之間，該内接合壁與該外接 合壁由該導電接合區之周圍傾斜地延伸並疊合在一 起’以形成該凹槽；以及 一封膠，填充於該凹槽内。 6· >申請專·㈣！項所述之散熱封裝單元，盆 ::第一金屬層以及該第二金屬層以衝㈣刻的方； 中^^全m範圍第1項所述之散熱封裝單元，其 接合區 上欣口於及弟一金屬層内，該組 顯露於該第二金屬層的外部。 、一糕分別 8.如申請專利範圍第7頊 =:㈣線’分別電性連接料發光ΐ=1ί: 包括反散熱封裝單元，更 接合區。 口上，並顯露出該導電 ίο.如申請專利範圍第丨 包括一黏著層，配置於該發光元件=|散熱封裝單元，更 /、°亥元件配置區之間。 13201250953 IW /υ/ /Γ/Λ Seven patent application scope: l'heat dissipation bracket structure, comprising: a metal layer having a conductive joint region and an inner joint wall; an insulation layer; and a first metal layer having a a component arrangement region and an outer bonding wall, wherein the insulating layer is adhered between the first metal layer and the second metal layer. The insulating layer is electrically isolated from the conductive joint region and the component arrangement region 1 S. The inner wall 5 and the outer joint wall extend obliquely from the conductive joint and are superposed to form a groove. ▲ 2. The heat-dissipating stent structure of claim 19, wherein the first metal layer and the second metal layer are formed by stamping or (iv). The heat dissipation bracket structure of claim 1, wherein the first metal layer comprises a set of electrical terminals located in the conductive joint region and embedded in the second metal layer, the set of electrical properties The terminal end of the terminal is exposed to the outside of the metal layer of δHai. 4. The heat-dissipating bracket structure according to the above-mentioned claim, further comprising a light reflecting layer disposed on the inner joint wall and exposing the joint area. 5. A heat dissipating package unit comprising: a light emitting element; a metal bracket having a recess for receiving the light emitting element; the metal bracket comprising: a first metal layer located inside the recess and having a conductive bonding region and an inner bonding wall; 12 201250953 IW /6 / /PA a second metal layer on the outer side of the recess, having a component arrangement region and an outer bonding wall, wherein the insulating layer is adhered to the first a metal layer is interposed between the two metal layers and the insulating layer is f-isolated between the conductive joint region and the component arrangement region, and the inner joint wall and the outer joint wall are obliquely extended and stacked by the circumference of the conductive joint region Put together 'to form the groove; and a glue filled in the groove. 6· > Application Special (4)! The heat-dissipating package unit of the item, the basin: the first metal layer and the second metal layer are punched (four) inscribed; the heat-dissipating unit according to the first item in the range of the first m range, the junction area of the mouth The group is exposed to the outside of the second metal layer in a metal layer. , a cake separately 8. If the scope of patent application is 7: = (4) line 'electrical connection material luminous ΐ = 1 ί: Includes anti-heat dissipation package unit, more junction area. On the mouth, and revealing the conductive ίο. As in the scope of the patent application 包括 includes an adhesive layer, disposed in the light-emitting element = | heat-dissipating package unit, and /, between the component arrangement area. 13
TW100120603A 2011-06-13 2011-06-13 Thermal conductive package unit ans frame structure thereof TW201250953A (en)

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TWI509849B (en) * 2013-03-21 2015-11-21 Advanced Optoelectronic Tech Light emitting diode package

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CN103489993A (en) * 2013-10-10 2014-01-01 晶科电子（广州）有限公司 High-reliability flip LED light source and LED module light source

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US20060097385A1 (en) * 2004-10-25 2006-05-11 Negley Gerald H Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same
WO2007141827A1 (en) * 2006-05-30 2007-12-13 Fujikura Ltd. Light emitting element mounting substrate, light source, lighting device, display device, traffic light, and method for fabricating light emitting element mounting substrate
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