201250950 六、發明說明： 【發明所屬之技術領域】 【0001] Λ本發明係關於使用液狀密封用樹脂組成物而製作之半導體 模組零件。 本申請案基於2〇11年5月19日於日本提出申請之日本特願 201Μ12202號主張優先權，並援用其内容。 【先前技術】 【0002】 近年之電子機器產業中，除了朝小型化、輕型化、高密隼化、 移至人，*便宜的海外之最終生產據鶴等經濟性 件，料移至海外，對裝載於最終製品的電子零 要求’ #由將半導體及獅树裝載在 細幾乎以 用。此模組零件，零件開始廣泛被使 (One-Segment Digital TV)發送^機f頻道數位電視 訊機能等在—個零件t提供；^機此或订動裳置之無線網路通 約如^之核組零件的電路基板利用使用了敎膨脹係數 。5卿/C、常溫彈性係數2略、择二数 ί :基，’但因為發生基板㈣曲或- 楛fτ置之小型、薄型ss;冬 之模Γ:ΐίί?模組用基板之薄型化也進行中。♦把以往 電子零件的高度成為其二：側 ⑧ 4 201250950 左右。因此，要將模組零件薄型化， 度由以往之500_變得更薄。铁者=仵不使基板側的厚 面密封的形態時，無論基板側二二，用樹脂將基板單 於與各部之熱膨解的差’由 結構進行控.考專利=3的方法有人考慮採用以模組的 【先前技術文獻】 【專利文獻】 【0003】 【專利文獻1】日本特開2〇〇2-2625〇號公報 【專利文獻2】曰本專利第4293〇88號公報 【發明内容】 [發明所欲解決的問題] 【0004】 最近’因為零件的薄型化，使用剛性高且薄的電路基板 if 抑制基板的祕。細，當將如此之薄型基板以習知樹 月曰組成物進行_時，目為鱗料的失配(mismateh)，合發生 更大的翹曲。尤其回流焊接製程中加熱的翹曲變得更顯 接不良成為一問題。 本發明之目的在於提供一種半導體模組零件，係在以液狀密 封樹脂組成物密封之半導體模組零件中，熱翹曲經抑制之更薄的 半導體模組零件。 【解決問題之方式】 【0005】 本發明如以下所述。 1.一種半導體模組零件，其係在由包含核心材的核心基板構 成的模組用電路基板裝載半導體晶片及/或被動元件並以樹脂組 成物密封而成，該樹脂組成物係以(A)環氧樹脂、(B)無機填充材、 5 201250950 (Q)硬化|_及(〇)具有二級絲或三級絲之魏化合物作為 必·^成分液狀樹脂組成物’該液狀樹脂組成物之硬化物在 250 C的彈性係數為W5GPa、坑至26〇〇c的熱膨脹率為 2500〜450〇ppm，該半導體模組零件的高度為16_以下。 2. 如[1]之半一體模組零件，其中，該液狀樹脂組成物之(b) …、機填充材之摻合量為7〇〜90體積〇/0。 3. 如[1]或[2]之半導體模組零件，其中，該液狀樹脂組成物硬 化物之玻璃轉移溫度為20(TC以上。 4如[1]至[3]項中任一項之半導體模組零件，其中，該液 脂組成物不含溶劑。 ㈣項中任—項之半導體模組零件，其中，該液狀樹 月曰、、且成物更3低應力添加劑〇丨〜重量％。 —^t[l]至[5]項中任一項之半導體模組零件，其中，該核心材 f /『性係數A nGPa以上、面内方向之線膨脹係數為 3〜14PPm/C、玻璃轉移溫度為24〇。〇以上。 電路===二二導體模組零件’其中’該模組用 半導===脂組成物’係用於如[1剛項中任-項之 【發明的效果】 【0006】 件時用^狀樹脂密封材的半導體模組零 【實施方式】 [實施發明的最佳形態] 【0008】 cb勺種半導體模組零件，該半導體模組零件係在 ======= 6 ⑧ 201250950 成物係以(A)環氧樹脂、（B)無機填充材、（c)硬化促進劑及(1))呈 有二級胺誠三_紅魏化合物作私要成分，鎌狀樹月旨 組成物之硬化物在250¾的彈性係數為KbQpa、25<1：至26(rc 之熱膨脹率為2500〜4500ppm、該半導體模組零件之高度16mm 以下。 以下詳細說明本發明。 【_】 板之 =因為零件安裝時之熱應力，對被密封之内部 此外，藉由將液狀樹脂組成物之硬化物 · 之翻，可抑制恤 =過上_任-雜況，_有池零件_變=情 土發明之半賴模組零件高度為16咖 雖然即使不使用上述液狀樹脂組成物 ， 的零件，但變成非薄型的半導體模組零件 ·=】型基板與細載零件可估算為:二:取小值即使是 上述液狀樹脂組成物係由如以所 即，㈧環氧樹脂只要是一分乂子下中戶=之9成九而構成者。 溫為液狀者即可，並不特舰定分子量或目魏基，且在常 膝』=产駿型環氧樹脂、甲酚“型環氧桝 路型核氧樹脂、雙齡F型環氧樹脂 糾月日相紛 二環氧丙基甲_'二胺基二苯基燒丙基苯胺、N，N- 土 r沉1¼虱丙胺、胺基酚型環 201250950 =樹，的雜基型環氧樹脂 己二=巧脂環式環氧化物等_^"氧烯樹'&_二環氧_ 苯核之環氧樹脂、，法并1二以衣彻 脂、萘型環氧樹脂、且右抽―宜型環氧樹脂、萘酚型環氧樹 基型環氧樹脂、具有苯基骨架的苯齡芳烧 環氧樹脂算的或聯伸苯基骨架的萘紛芳烧基型 :‘或環氧丙胺 贼賴倾脂断 定使用量較佳，但口I县你針命0, 牧有旺<靦點而吕，限 ί 脂 士==者 具有流動性I情^?係心25c ’又，液狀係指樹脂或樹脂組成物 【ooiti日种，上述液狀樹脂組成物在室溫(25。〇具有流動性。 (B)無機填充材，可使用—般用於密封材料者。 結 二氧化矽、合成二氧化矽粉末 4====細《，繼雜或_ 充材之含量，就成雜與耐焊接龜雜的平衡而古， 有液狀樹馳成物巾較佳為使用7㈣體積％、更佳為^用 -例:等=::將^ ίΐ物，生:耐濕性、強度等4較=融=:": ⑧ 8 201250950 74〜84體積％。 無機填充材之含量低於 模組零件之翹曲抑制效果織丨民值陪，熱膨脹率不會充分變小 耐详接龜裂性降低等不^’又’伴隨吸水率的上升’恐發生 【=液狀密封‘成物面 劑間的反應者“ 環^基之間、或環氧基與硬化 唑、2-苯基-4-甲基咪唾’例如:2-甲基咪唾、2_苯基味 雜苯的加成物、:u氰乙唾與2；^二胺基-6-乙烯基三氮 咪唾等之味唾類、二顧t妒土°米°坐、2_苯基經基甲基 =苯芙膦、甲其-胺、有機過氧化物等。又，也可使用 ;;;基:機膦，苯基鎮.四苯二: 四苯基鎮.四萘甲酿氧二^ t\'四^基鎮·四萘节酸赠酷、 的四取代鱗鹽·四取代；“的：四萘氧基，酸酯等 _十-#·7_二氮雜雙環及^衍=、、=氮g環 甲胺等的胺系化合物等。 〆、仃㈣-丁胺、卞基二 【0013】201250950 VI. [Technical Field] [0001] The present invention relates to a semiconductor module component produced by using a resin composition for liquid sealing. This application claims priority based on Japanese Patent Application No. 201Μ12202 filed on May 19, 2011 in Japan and uses its contents. [Prior Art] [0002] In recent years, in the electronic equipment industry, in addition to miniaturization, light weight, high density, and shifting to people, *the cheaper overseas production, such as cranes, is expected to be moved overseas. The electronic zero requirement loaded on the final product '# is used by loading semiconductors and lion trees in fineness. This module part, parts began to be widely used (One-Segment Digital TV) to send ^ machine f channel digital TV signal machine can be provided in a part t; ^ machine or set the wireless network connection of the skirt like ^ The circuit board of the core set part utilizes a helium expansion coefficient. 5 Qing / C, room temperature elastic coefficient 2 slightly, choose two ί : base, 'but because of the substrate (four) or - 楛fτ set small, thin ss; winter model: ΐ ίί? module substrate thinning Also in progress. ♦ Put the height of the past electronic parts into two: side 8 4 201250950 or so. Therefore, in order to make the module parts thinner, the degree becomes thinner than the previous 500_. When the iron is not in the form of sealing the thick surface on the substrate side, the difference between the thermal expansion of the substrate and the respective portions by the resin is controlled by the structure regardless of the substrate side. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 2-26-26 No. [Patent Document 2] Japanese Patent No. 4293〇88 [Invention [Problem to be Solved by the Invention] [0004] Recently, because of the thinning of parts, the use of a highly rigid and thin circuit board if the substrate is suppressed. Fine, when such a thin substrate is subjected to the conventional tree ruthenium composition, the mismatch of the squama is expected to cause a larger warpage. In particular, the warpage of heating in the reflow soldering process becomes more difficult to become a problem. SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor module component which is a semiconductor module component which is thinned by heat warpage in a semiconductor module component sealed with a liquid sealing resin composition. [Method for Solving the Problem] [0005] The present invention is as follows. A semiconductor module component in which a semiconductor wafer and/or a passive component are mounted on a circuit board for a module composed of a core substrate including a core material, and the resin composition is sealed by a resin composition (A) Epoxy resin, (B) inorganic filler, 5 201250950 (Q) hardened |_ and (〇) Wei compound having secondary or tertiary filaments as a liquid component of the liquid component of the liquid component The cured product of the composition has a coefficient of elasticity of W5 GPa at 250 C, a thermal expansion coefficient of 2500 to 450 〇 ppm at a pit of 26 〇〇c, and a height of the semiconductor module component of 16 Å or less. 2. The semi-integrated module part according to [1], wherein the liquid resin composition (b) ... and the machine filler are blended in an amount of 7 〇 to 90 〇 /0. 3. The semiconductor module part of [1] or [2], wherein the liquid resin composition has a glass transition temperature of 20 (TC or more). 4 such as any one of [1] to [3] The semiconductor module part, wherein the liquid fat composition does not contain a solvent. (4) The semiconductor module part of the item - wherein the liquid tree moon 曰, and the composition is more 3 low stress additive 〇丨~ The semiconductor module part of any one of the above-mentioned items, wherein the core material f / "the coefficient of the coefficient A nGPa or more, the in-plane direction linear expansion coefficient is 3 to 14 PPm / C, glass transfer temperature is 24 〇. 〇 above. Circuit === two or two conductor module parts 'where 'the module with semi-conduct === grease composition' is used for [1] [Effects of the Invention] [0006] A semiconductor module of a resin-like sealing material is used in an embodiment [Embodiment] [Best Mode for Carrying Out the Invention] [0008] A semiconductor module part of a cb spoon, the semiconductor module part Based on ======= 6 8 201250950 The system is composed of (A) epoxy resin, (B) inorganic filler, (c) hardening accelerator and (1)) _Hongwei compound as a private component, the elastic modulus of the composition of the scorpion tree is 2503⁄4, the elastic coefficient is KbQpa, 25<1: to 26 (the thermal expansion rate of rc is 2500~4500ppm, the height of the semiconductor module part) 16mm or less. The present invention will be described in detail below. [_] Plate = Because of the thermal stress during the mounting of the part, the inside of the sealed body can be restrained by turning over the cured product of the liquid resin composition. The upper part of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ·=】The type of substrate and fine-loaded parts can be estimated as: 2: Take a small value even if the above-mentioned liquid resin composition is from the point of view, (8) Epoxy resin as long as it is one minute, the lower part of the household = 90% It is composed of nine. The temperature is liquid, and it is not specific to the molecular weight or the Weiwei group, and it is in the knee-length 』=Maojun type epoxy resin, cresol type epoxy-type nucleus epoxy resin, Two-year-old F-type epoxy resin, the solar phase, the two-phase epoxypropyl _'diaminodiphenyl benzene Propyl aniline, N, N- r 沉 11 ⁄ ⁄ ⁄ 、 、 、 、 、 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 &_diepoxy_ phenyl nucleus epoxy resin, method and 12 bis, phthalocyanine type epoxy resin, and right pumping - suitable epoxy resin, naphthol type epoxy resin type epoxy Resin, phenyl-aged epoxidized epoxy resin with phenyl skeleton or linked phenyl skeleton of naphthalene aryl base type: 'or the epoxy propyl thief ruthenium is determined to use better, but mouth I county you Needle life 0, 牧有旺<腼点和吕,限ί脂士==者有流动性I情^?心心25c '又作,liquid refers to resin or resin composition [ooiti day, the above liquid Resin composition at room temperature (25. 〇 has liquidity. (B) Inorganic filler, which can be used as a sealing material. The formation of cerium oxide and synthetic cerium oxide powder 4 ====fine", the content of the filling or _ filling material, the balance between the impurity and the welding resistance, and the liquid tree is better In order to use 7 (four) volume%, more preferably ^ use - for example: etc. =:: ^^ίΐ, raw: moisture resistance, strength, etc. 4 ===&": 8 8 201250950 74~84% by volume. The content of the inorganic filler is lower than the warpage suppression effect of the module parts, the thermal expansion rate will not be sufficiently reduced, and the cracking resistance will be reduced, etc., and the increase in water absorption rate will occur. = liquid seal 'reactor between the agents" between the ring groups, or epoxy and hardened azole, 2-phenyl-4-methyl imino saliva, for example: 2-methyl ipsi, 2 _Phenyl misobenzene adduct,: u cyanide and salicin; 2 diamino-6-vinyl triazepine saliva and other taste saliva, two Gu t 妒 ° ° ° ° sit, 2_ Phenyl benzyl methyl = phenylphosphine, ketamine, organic peroxide, etc. Also, can be used;;; base: organic phosphine, phenyl zhen. tetraphenyl benzene: tetraphenyl zhen. tetraheptan A brewed oxygen two ^ t \ ' four ^ base town · tetrahedral acid gift cool, four-substituted scale salt · tetra-substituted; ": tetra-naphthyloxy, acid esters, etc. _ 十-#·7_diazepine An amine-based compound such as a bicyclic ring and a derivative of ?, = = nitrogen g-cyclomethylamine. 〆, 仃 (4)-butylamine, sulfhydryl 2 [0013]
^可視需要於本發明所使用之液狀樹脂組成 f ，例如，·鄰苯二甲酸奸、馬來酸 3更J :ί_:二甲酸肝、3_甲基-六氫鄰苯二甲酸酐與：二-六 =本一％酐的混合物 '四氫鄰苯二甲酸酐、納迪 酐等的酸酐、脂肪族胺、芳香族胺、物曰；彳 、广㈣ί中之1種或將多種併用而使用。於填充材料摻合量多之 脂組成物憎合硬化劑時’硬化劑為液狀且黏度儘可能低 者較it。如此的硬化劑，使用四氫鄰苯二 - 【0014】 1土 〇))具有二級胺基或三級胺基之矽烷化合物 201250950 )丙胺、雙(二曱胺)二曱基矽烷、1，1M申乙基雙⑼^山卜四曱基石夕 烧胺）、二曱胺三曱基矽烷等，只要是具有流動性提升作用者即 可，並無特別限定。 具有二級胺基或三級胺基之矽烷化合物，較佳為在液狀樹脂 組成物中以0.05〜1,0重量％之範圍使用。更佳為〇 〜0.5重量％ 之範圍。低於下限值則無法得到充分之流動性提升作用，若超過 上限值則因為揮發導致之耗損量增加，模組零件之輕曲恐惡化°。 又，在此所說之流動性，在E型黏度計裝設Qp_51型錐 (CONE) ’在25 C以0.5rpm測定的黏度為300Pa · s以下較佳。 更佳為200Pa · s以下。又，搖變性方面，較佳為1.6以下、更佳 為1.4以下。搖變性係經上述之e型黏度計測定之黏唐的卜， [〇.5ipm時之黏度]/[5.0rpm時之黏度]求得。 【0015】 本發明所使用之液狀樹脂組成物不使用溶劑較為理想。摻合 ;谷劑時’囱為硬化物之玻璃轉移溫度降低、硬化收縮增加，恐怕 有模組零件赵曲惡化的情況。 【0016】 可於用於本發明之液狀樹脂組成物使用低應力添加劑。低應 力添加劑，例如液狀之環氧化聚丁二烯橡膠、矽酮油、核殼型g 酮樹脂(silicone)_、固體矽酮橡膠等，但不限於此等限定。在此所 舉例者，為了維持流動性，較佳為夜狀的低應力劑，此外，為 保持密合性’更佳為液狀之環氧化聚丁二烯轉。又，其添加 ，較佳為液狀樹脂組成物中〇·1〜1.〇重量％，更佳為〇 〇重 =添加量低於下限猶，無轉顺分的減力化效果，也益 =待更健Wb。又，若細上限值，硬錄之 =降^ 組零件之細惡化、或對模組内“ 【0017】 等的概合物或蝶 201250950 【0018】 /本發明所使用之液狀樹脂組成物之硬化物的玻璃轉移溫度 ’係指將在特定條件硬化的液狀樹脂組成物試料以DMA 得之tan5曲線的尖峰溫度。 ' 玻^轉移溫度200。(：以上為理想、22(TC以上更為理想。玻璃 轉移溫度低於下限值時，在將模組零件裝載於母基板時之焊 流處理時的高溫中’麵曲恐變大。 【0019】 用於本發明之液狀密封樹脂組成物的製造方法，例如將夂成 分利用行星式攪拌機、三報混賴(triplen)11)、雙加熱輥混練^、 的伽分散混練後，視在真空下脫泡處理而製造。 本發明所使用之模組用電路基板由核心基板所構成。核心基 吏用在核心材的兩面形成有電路、及/或有通孔形成者广 本發明所使用之核心基板的核心材，宜為在25〇〇C2彈性係 數為15GPa以上、面内方向之線膨服係數3〜i4ppm、玻璃轉穿客 溫度為2贼以上較佳。 PP賴轉移 更佳為在250。〇之彈性係數為20GPa以上、面内方向之線膨 脹係數5〜12ppm、玻璃轉移溫度為260°C以上。 士核心材在250。(：之彈性係數低於下限值時，難以抑制零件裝 載，之翹曲。又，面内方向之線膨脹係數若超過上限值，士與^ 裝晶片所連接之半導體矽晶内的熱膨脹係數的失配變大，翹/曲恐 惡化，若低於下限值’與密封樹脂之熱膨脹係數之失配變大，g 仍恐怕使翹曲惡化。進一步地，當玻璃轉移溫度低於下限值時， 在模組零件裝載時之焊接溫度附近的熱膨脹率變大，與裝載零件 之熱膨脹係數之失配也變大。因此，恐怕發生零件 【Q022】 ^ 、士述核心基板可使用：在由核心材與金屬箔而成之疊層板形 成有電路、及/或形成通孔者，或，藉由無電解鍍敷等方法於核 201250950 心材表面形成有電路者。 至少3叠在預浸體1片或多片疊層者的上下兩面的 面重豐金屬箔、加熱、加壓而得。 此，可;^係使後述之樹脂組成物含浸於基材而成者。藉 接可靠造介電特性、在高溫多濕下之機械性、電性^ 優異的印刷配線板的預浸體。 I ，別限l銅及_合金、 金、^及又、盃及金系合金、辞及辞系合金、錄及鎳系合 錫系&孟、鐵及鐵系合金等金屬箔。 上述基材並無特別限定，例如：以玻璃織布、 酿胺树脂纖維等的聚醢胺系樹 樹脂纖維、氣樹脂纖維等為主成分之織布或不織ί 纸等為牛皮紙、棉絨紙、織與牛皮紙漿的混抄 士專為主成为的紙基材專有機纖維基材等^ can be used in the liquid resin composition f used in the present invention, for example, · phthalic acid, maleic acid 3 more J: ί_: liver diacid, 3-methyl-hexahydrophthalic anhydride and : two-six = a mixture of the first-% anhydride, an anhydride of tetrahydrophthalic anhydride, nadic anhydride, an aliphatic amine, an aromatic amine, a substance; one of 彳, 广(四) ί or a combination of a plurality of And use. When the fat composition is blended with a large amount of the filler, the hardener is liquid and the viscosity is as low as possible. Such a hardener is a tetrahydrophthalic acid-based compound having a secondary or tertiary amine group 201250950 propylamine, bis(diamine)didecyldecane, 1, 1M, ethyl bis(9), sulphate, dimethyl decyl decane, and the like may be used as long as it has a fluidity-improving effect, and is not particularly limited. The decane compound having a secondary amino group or a tertiary amino group is preferably used in the range of 0.05 to 1, 0% by weight in the liquid resin composition. More preferably, it is in the range of ～0.5% by weight. Below the lower limit, sufficient fluidity improvement is not obtained. If the upper limit is exceeded, the amount of wear due to volatilization increases, and the lightness of the module parts may deteriorate. Further, the fluidity referred to herein is preferably such that the viscosity of the Qp_51 type cone (CONE) mounted on the E-type viscometer at 25 C at 0.5 rpm is preferably 300 Pa·s or less. More preferably 200 Pa · s or less. Further, the aspect of the shake is preferably 1.6 or less, more preferably 1.4 or less. The shake degeneration was obtained by the above-mentioned e-type viscometer, which was determined by the viscosity of the adhesive, [〇. 5ipm viscosity] / [5.0 rpm viscosity]. [0015] The liquid resin composition used in the present invention is preferably not used. When the granules are used, the glass transition temperature of the hardened material is lowered, and the hardening shrinkage is increased. I am afraid that the module parts are deteriorated. [0016] A low stress additive can be used in the liquid resin composition used in the present invention. Low stress additives such as liquid epoxidized polybutadiene rubber, fluorenone oil, core-shell type g ketone resin, solid fluorenone rubber, and the like, but are not limited thereto. For example, in order to maintain fluidity, it is preferably a night-like low stress agent, and more preferably a liquid epoxidized polybutadiene to maintain adhesion. Further, the addition thereof is preferably 〇·1 to 1. 〇% by weight in the liquid resin composition, more preferably 〇〇 weight = the amount of addition is lower than the lower limit, and the effect of reducing the force of the conversion is not beneficial. = Be more healthy Wb. Further, if the upper limit value is fine, the hard recording = the deterioration of the components of the group, or the composition of the module [0017] or the butterfly 201250950 [0018] / the liquid resin used in the present invention The glass transition temperature of the cured product of the substance refers to the peak temperature of the tan5 curve obtained by DMA of the liquid resin composition sample hardened under specific conditions. ' Glass transition temperature 200. (: The above is ideal, 22 (TC or more) More preferably, when the glass transition temperature is lower than the lower limit value, the surface curvature is increased in the high temperature at the time of solder flow processing when the module component is mounted on the mother substrate. [0019] The liquid seal used in the present invention In the method for producing a resin composition, for example, a ruthenium component is kneaded by a planetary mixer, a triple 11 (11), and a double heating roll, and then subjected to a defoaming treatment under vacuum. The circuit board for a module to be used is composed of a core substrate. The core substrate is formed on both sides of the core material, and the core material of the core substrate used in the present invention is formed on the both sides of the core material. 25〇〇C2 elastic coefficient is 15GPa The line expansion coefficient of the upper and in-plane directions is 3~i4ppm, and the glass transmissive temperature is preferably 2 thieves or more. The PP ylide transfer is preferably at 250. The elastic coefficient of 〇 is 20GPa or more, and the linear expansion coefficient of the in-plane direction 5 to 12 ppm, the glass transition temperature is 260 ° C or higher. The core material is 250. (When the elastic modulus is lower than the lower limit value, it is difficult to suppress the warpage of the parts, and the linear expansion coefficient of the in-plane direction is When the value exceeds the upper limit value, the mismatch of the thermal expansion coefficient in the semiconductor twin crystal to which the wafer is connected is increased, and the warpage/truck is deteriorated. If the lower limit value is lower than the lower limit value, the thermal expansion coefficient of the sealing resin becomes larger. , g is still likely to deteriorate the warpage. Further, when the glass transition temperature is lower than the lower limit value, the thermal expansion rate near the soldering temperature at the time of mounting the module parts becomes large, and the mismatch with the thermal expansion coefficient of the loaded parts also becomes Therefore, it is feared that the part [Q022] ^, the core substrate can be used: a circuit formed by a core material and a metal foil, and/or a through hole is formed, or by electroless Plating and other methods in the core 201250950 The surface of the material is formed with a circuit. At least three layers of the upper and lower sides of the prepreg are stacked on the upper and lower sides of the metal foil, heated and pressurized. This can be used to make the resin composition described later. The product is impregnated with a substrate. It is a prepreg of a printed wiring board that is excellent in dielectric properties and mechanical properties and electrical properties under high temperature and humidity. I. Others l Copper and _ alloy, gold , ^ and 、, cup and gold alloys, rhetoric and rhetoric alloys, and nickel foils and alloys such as Meng, iron and iron alloys. The above substrates are not particularly limited, for example: glass woven A woven fabric or a non-woven paper such as a polyamide resin fiber or a gas resin fiber such as a cloth or an amine resin fiber is mainly used as a kraft paper, a cotton velvet paper, a woven fabric and a kraft pulp. Paper substrate, special organic fiber substrate, etc.
〇 , ；；?T 熱膨脹係數。 ㈣次八半又可細小 【0025】 材等^樹脂組成物並無特別限定，例如以熱硬化輯脂與填充 上述熱硬化性樹脂，例如：苯酚酚醛樹脂、甲、 又酚Α酚醛樹脂等的酚醛型酚樹脂、未改性之可溶性酚榭浐、曰 桐油、亞麻仁油、胡桃油等改性的油改性可溶性 曰^冰 型齡樹脂等的賴脂、魏A型環氧翻旨、麵F4 雙齡S型環氧樹脂、雙紛E型環氧樹脂、雙紛M义‘曰、 雙射型環氧樹脂、雙w型環氧樹脂等之雙_環氧n 酚酚醛型環氧樹脂、曱酚酚醛環氧樹脂等之酚醛型環樹/ ^ 12 201250950 、聯苯芳烷基型環氧樹脂、芳基伸烷基型環氧樹 ，剂ίϊΐ氧樹脂、蒽型環氧樹脂、苯氧型環氧樹脂、雙環戊二 衣，树脂、降莰烯型環氧樹脂、金剛烷型環氧樹脂、苐型環 虱的環氧樹脂、尿素(urea)樹脂、三聚氰胺樹脂等的具有 笨環的樹月旨、不餘和聚酯樹脂、雙馬來酸亞胺樹脂、聚胺 、鄰苯二甲酸二稀丙醋樹脂、石夕酮樹脂、具有苯并 =£ f Α衫曰、降坎烯系樹脂、氰酸酯樹脂、苯并環丁烯樹脂、 又馬來酿亞胺三氮雜笨樹脂等。 將此等之中的1種單獨使用，也可將具有不同的重量平均 &用Γ的2種以上併用，也可將1種或2種以上與此等的預聚物 等巾尤其以環氧脑、鏡麟脂(包含氰酸酯樹脂 脂、苯并環丁稀樹脂及雙馬來酿亞胺三氮雜苯 ::至少其中!種之熱硬化性樹脂較佳。此等中又以細ς 【0026】 構成如此之模組用電路基板用的核心基板， L^^427^5GS(商品名、住友電木股份有限公司製)等。 本發明所使用之模組用電路基板，也可使用更 層=可在樹脂層形成有用以與核心基板“的= 層孔’也可在獅層表轉成導體·。也可更進 路形成-般用於印刷配線板之防焊劑。 /长等體策 栋爾使用在基材含浸上述樹脂組成物者，亦即可 5 月/ 土材且為有機纖維基材或玻璃纖维其材耸。荭 由上述，在低熱膨脹係數與加工性的平衡方面H准基材專。措 又，樹脂層，也可使用疊層械郎=1、 【0028】 本發明之半導織組零件之—例的概略剖_如圖丨所示。 13 201250950 於核心材的兩面形成銅箔的電路， 之核心基板1的兩面形成由=有通孔(⑽導通電路)6 劑7,得到模組用電路基成板由更形成防焊 被動元件等的裝载零件4，以咖: 、碟載半導體晶片、 模組零件。半導體模組零件介由Ι ϋ成物3密封得到半導體 【0029】 由知球5羞载於其他的電路基板等。 本發明之半導體模組零件之萝告、 不限於此等。 、。去，例如以下的方法，但 即，在係支持體之模組用電路基板之 晶片電容器等被動元件與半導體晶片後，電^ = 輕易地小型化的倒裝晶片接合。並次，条^ :九望，到此更 組成物。液狀樹月旨組成物的塗佈?推合=液樹脂 60°C也可為當、、Θ。该此抖at》t〆’、々又特性’可加熱至約 ,, 為吊/孤液狀樹月日組成物之硬化溫度，可根攄用日+、 物之硬化促㈣或硬化劑之組合 降低，若過高則由於液狀樹脂之硬化二===== 裝載零件的觸脹健的差異，模組德變 =^ 約im：，較佳為i5〇t：左右。 文a敌即使同也為 化又，ΐ 一片之模組用電路基板上配置有複數之模組較佳。在 ，情況，在使液;^樹脂組成物硬化後，藉由晶粒切割裝置 d、個片化得到單一之半導體模組零件。 【實施例】 【_】 以下，利用實施例具體說明本發明，但本發明不限於鹿 施例。 寸只 [實施例1] ，將下述成分置入燒杯以到勺混合後，以三輕混練機混鍊3次 後置於常溫陳化12小時後，置入燒杯，以真空烤箱（常溫、5贿 進行10分鐘脱泡處理得到液狀樹脂組成物A。. ⑧ 14 201250950 環氧乙基甲氧 ⑴作為環氧樹脂1(A)之N，N-雙(環氧乙基曱基)_4_( 基)苯胺） (JER-630，三菱化學股份有限公司製） ] (2)作為環氧樹脂2(A)之1，4環己烷二甲醇二環氧丙醚 ZV-1 ^ 68重量份 1150重量份 ·· 、 240重量份 3重量份 3重量份 2重量份 11重量份 ZX-1658GS東都化成公司製 (3) 作為無機填充材1(B)之熔融二氧化矽 HS-202 Micron 公司製 (4) 作為無機填充材2(B)之熔融二氧化矽 SO-C3 Admatechs 公司製 (5) 作為硬化促進劑1(C)之2 -苯基_4 _甲基味唑 0.5重量份 11重量份 -3-月安丙基三甲 四國化成公司製 ⑹作為硬化促進劑2(C)之二氰二醯胺 (7)作為具有二級胺基之珍烧化合物(D)之N_苯基 氧基矽烷 KBM-573信越化學工業公司製 (8) 作為偶聯劑之γ環氧丙基•丙基•三乙氧基石夕烧 ΚΒΕ-403Ε信越化學工業公司製 (9) 作為著色劑之碳黑 (1 〇)作為低應力劑之環氧化液狀聚丁二烯橡膠 BF-1000 ADEKA股份有限公司製 【0031】 對所製作的液狀樹脂組成物Α進行以下的評價。 (a) 黏度測定：於E型黏度計裝設CP-51型錐，以25°C 〇.5rpm、25°C 5rpm 的條件測定。 (b) 搖變性.上述黏度測定中’從以jjpm及〇.5jpm測定的黏 度結果以如下的方式計算。[05rpm之黏度卜[5rpm 之黏度]。 (c) 熱黏度安定性：利用Haake公司製Rheometer RS150，以 測定間距250mm、測定模式cs 5〇〇Pa，1Ηζ、2〇ηιιηφ之板⑼你) 型的轉子、溫度固定於8〇。〇測定2小時。以[2小時後之黏度卜[測 15 201250950 定開始時之黏度]作為熱黏度安定性。〇 , ;;?T Thermal expansion coefficient. (4) The eighth and the second half may be fine. [0025] The resin composition is not particularly limited. For example, the thermosetting resin is filled with the thermosetting resin, for example, a phenol phenol resin, a phenol phenol resin, or the like. Modified phenolic phenolic resin, unmodified soluble phenolphthalein, eucalyptus oil, linseed oil, walnut oil, etc. Modified oil-modified soluble 曰^ ice-age resin, etc. F4 double-age S-type epoxy resin, double-layer E-type epoxy resin, double-fold M-shaped '曰, double-shot epoxy resin, double w-type epoxy resin, etc. Phenolic ring tree of resin, nonylphenol phenolic epoxy resin, etc. / 12 201250950, biphenyl aralkyl type epoxy resin, aryl alkylene type epoxy tree, agent ϊΐ ϊΐ ϊΐ resin, 蒽 type epoxy resin, phenoxy Epoxy resin, bicyclopentane, resin, norbornene type epoxy resin, adamantane type epoxy resin, epoxy resin of ruthenium ring type, urea (urea) resin, melamine resin, etc. Tree, non-residual and polyester resin, bismaleimide resin, polyamine, phthalate Acid dipropylene vinegar resin, linaloyl resin, benzo- ** f 曰 曰 降, decene-based resin, cyanate resin, benzocyclobutene resin, and maleimine triazole Resin, etc. One of these may be used alone or in combination of two or more kinds of different weight averages and amps, or one or two or more types of prepolymers such as these may be used in particular. Oxygen brain, mirror lipid (containing cyanate resin resin, benzocyclobutyl resin and bismaleimide triazabenzene: at least one of the thermosetting resins is preferred. [002] The core substrate for the circuit board of the module, L^^427^5GS (trade name, manufactured by Sumitomo Bakelite Co., Ltd.), etc. The circuit board for the module used in the present invention is also A layer can be used to form a resin layer to be used to form a "layer hole" with the core substrate. It can also be converted into a conductor on the lion layer table. It can also be formed into a solder paste for printing a wiring board. If the substrate is impregnated with the above resin composition, it can also be May/earth material and it is made of organic fiber substrate or glass fiber. 荭 From the above, in low thermal expansion coefficient and processability In terms of balance, the H-substrate is specialized, and the resin layer can also be used as a laminate. A schematic cross-section of a part of a guide weave group is shown in Fig. 13. 201250950 A circuit for forming a copper foil on both sides of a core material, the two sides of the core substrate 1 are formed by a through hole ((10) conduction circuit) 6 doses 7 The module base plate for the module is obtained by further loading the soldering passive component, etc., the loading component 4, the coffee chip, the semiconductor wafer, and the module component. The semiconductor module component is sealed by the semiconductor component 3 to obtain the semiconductor [0029] The known ball substrate 5 is mounted on another circuit board or the like. The semiconductor module component of the present invention is not limited thereto, and is, for example, the following method, that is, the mode of the support body After the passive components such as the chip capacitors of the circuit board are assembled with the semiconductor wafer, the flip-chip bonding is facilitated by miniaturization. Next, the strips are: nine, and the composition is further. Coating/pushing = liquid resin 60 ° C can also be used as, when, Θ. The shaking at "t〆', 々 and characteristics 'can be heated to about, for the hanging / orphan-like tree month composition The hardening temperature can be reduced by the combination of day +, hardening of the material (four) or hardener. If it is too high, it will be due to the hardening of the liquid resin. ===== The difference in the contact expansion of the loaded parts, the module de-change = ^ about im:, preferably i5〇t: around. Further, it is preferable to arrange a plurality of modules on the circuit board for a module. In the case, after the resin composition is hardened, the die is cut by the die cutting device d. [Examples] [Examples] Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited to the examples of deer. In the example [Example 1], the following components were placed in a beaker to be mixed with a spoon. After that, the mixture was mixed three times with a three-light mixing machine, and then aged for 12 hours at room temperature, placed in a beaker, and defoamed in a vacuum oven at room temperature for 5 minutes to obtain a liquid resin composition A. 8 14 201250950 Epoxyethyl methoxy (1) as N,N-bis(epoxyethyl decyl)_4_(yl)aniline of epoxy resin 1 (A) (JER-630, manufactured by Mitsubishi Chemical Corporation (2) 1,4 cyclohexanedimethanol diglycidyl ether as epoxy resin 2 (A) ZV-1 ^ 68 parts by weight 1150 parts by weight · 240 parts by weight 3 parts by weight 3 parts by weight 2 11 parts by weight of ZX-1658GS manufactured by Tosho Chemical Co., Ltd. (3) Fused cerium oxide as inorganic filler 1 (B) HS-202 manufactured by Micron Co., Ltd. (4) Fused cerium oxide as inorganic filler 2 (B) Manufactured by SO-C3 Admatechs Co., Ltd. (5) as a hardening accelerator 1 (C), 2-phenyl-4-methyl-methyl oxazole, 0.5 parts by weight, 11 parts by weight, 3-month, propylene, succinic, four countries, (6) The dicyandiamide (7) of the hardening accelerator 2 (C) is N-phenyloxydecane KBM-573, which is a rare earth compound (D) having a secondary amine group, and is manufactured by Shin-Etsu Chemical Co., Ltd. (8) Γ-glycidyl propyl-propyl-triethoxy sulphide ΚΒΕ-403 Ε Ε 越 化学 化学 Ε Ε Ε Ε Ε Ε Ε Ε Ε Ε Ε Ε Ε Ε 9 9 9 9 9 9 9 9 9 9 Ε Ε Ε Ε Ε Ε Ε Ε Diene rubber BF- 1000 ADEKA Co., Ltd. [0031] The liquid resin composition Α prepared was subjected to the following evaluation. (a) Viscosity measurement: A CP-51 type cone was attached to an E-type viscometer and measured at 25 ° C 〇 5 rpm and 25 ° C 5 rpm. (b) Shake denaturation. The viscosity results measured by jjpm and 〇.5jpm in the above viscosity measurement were calculated as follows. [Voice of 05 rpm [viscosity of 5 rpm]. (c) Thermal viscosity stability: The Rheometer RS150 manufactured by Haake Co., Ltd. was used to measure the rotor with a pitch of 250 mm and a measurement mode of cs 5〇〇Pa, 1Ηζ, 2〇ηιιηφ (9), and the temperature was fixed at 8〇. 〇Measured for 2 hours. The viscosity is [2 hours later [measured as the viscosity at the beginning of 201250950] as the thermal viscosity stability.
(d) 熱膨服率·將所製作的液狀樹脂纟且成物裝入特定的模星， 在150°C硬化3小時，製作長度約l〇mm之試驗片。將其以TMA 測定裝置（Seiko Instruments公司製），以測定溫度範圍 〇°C〜330°C、升溫速度每分鐘l〇°C計測熱膨脹，得到25°c至26(TC 之熱膨脹率。(d) Thermal expansion rate - The prepared liquid resin was placed in a specific mold star and cured at 150 ° C for 3 hours to prepare a test piece having a length of about 10 mm. This was measured by a TMA measuring apparatus (manufactured by Seiko Instruments Co., Ltd.) at a temperature range of 〇 ° C to 330 ° C and a temperature increase rate of 1 ° C per minute to obtain a thermal expansion coefficient of 25 ° C to 26 (TC).
(e) 彈性係數、玻璃轉移溫度：將所製作的液狀樹脂組成物， 裝入特定的模具，在150。(：硬化3小時製成試驗片。將其以DMA 定裝置（Seiko Instruments公司製），以測定溫度範圍 〇°C〜300°C，升溫速度每分鐘5°C測定彈性係數，使用各溫度之 儲存彈性係數。又，將同時測定的tan3曲線的尖峰溫度定為玻璃 轉移溫度。 # 所製作的液狀樹脂組成物，在25。(：的黏度係在〇.5rpm為 143Pa · s、在 5.0rpm 為 lOOPa · s、搖變性 1.4、25。(：至 260°C之 熱膨脹率為3400ppm、在25〇t的彈性係數為7.7GPa、玻璃轉移 溫度為232°C。 【0032】 [翹曲評價] 將液狀樹脂組成物A塗佈於接下來的模組用模擬電路基板 a。模組用模擬電路基板a使用由25〇〇c之彈性係數為2〇Gpa、面 内方向線膨脹係數為l〇ppm、玻璃轉移溫度為26(rc之核心材而 成之核心基板(LaZ4785GS准友電木股份有限公司製）。將核心材 之特性利用以下的方法評價。 [核心材之彈性係數] 將核心基板的銅箔全面蝕刻，製作15mmx2〇mm之試驗片， 使用島津製作所公司製Autograph AG-IS藉由3點·彎曲試驗求出 彈性係數。 測疋條件疋為頭速(head speed)0.5mm/min、支點距離2mm， 以5 C/分鐘使於20°C〜300°C升溫，測定250°C之彈性係數。 [核心材之、_義率] ^ 16 ⑧ 201250950 將核心基板之銅箱全面钮刻，製作5_2〇醜之 利用TMA裝置(TA Instruments公司製），以5。「/八後生 ft；之面内方向(XY方向)的線膨脹係數 、及i璃轉移溫 [核心材之玻璃轉移溫度] 將核心基板之銅箔全面蝕刻，製成1〇mmx2〇mm之 以DMA測定裝置(Seik0 ϊ她啦 度定為玻璃轉移溫度。 【0033】 製作核心基板之核心材層厚度為2〇〇μηι，且在核心材層的上 下分別有ΙΟμηι厚的銅箔電路，且在銅箔電路覆蓋之 焊劑(PSR4000-AUS308)之模組用模擬電路基板。模組用模擬電 路基板之概略剖面圖如圖2所示。模組用模擬電路基板的大小為 90x100mm、總厚度為250μηι。利用塗佈機器人（三軸機哭人分 配器：武藏高科技股份有限公司製)在基板的中央塗佈液^樹脂 組成物A，使樹脂部的厚度為1〇士〇.2mm。塗佈尺寸為 80x90mm°用於塗佈的針頭之内徑為2 27mm，調節塗佈塵力使 塗佈節距為1.8mm、塗佈速度21mm/s。 將塗佈後之基板外周的空白部，利用夾子(clip)(卷宗用夾）， 張拉於厚度約lcm之平的鋁板，以烤箱使其以i5(rc硬化3小 時。充分冷卻後，將夾子取下來，得到樹脂密封完成的基板(分 割前模組）。 將此樹脂密封完成的基板’以Shadow Moire測定裝置 (AcroMetrix公司製)測定輕曲。勉曲係在常溫量測基板的樹脂塗 佈部。在測定的平面’採用以使高度(最大值-最小值=翹曲量） 為最小的方式調整角度時的翹曲量作為測定值。 如此方式而得的液狀組成物A與模組用模擬電路基板&的組 合在硬化後的常溫的基板龜曲量為411μπι、在260°C之基板輕曲 里為731μιη。常溫中在此基板尺寸的翻(曲量較佳為imm以下。 17 201250950 輕曲量為imm以上時，在利用晶粒切割之個片化時恐怕 生問題。又’即使在26(rc之基板_曲量較= 壞或剝離。 U為lmm M上，恐怕發生内部零件的破 又，以^構成之分割前模組全體的厚度為約125mm。 將为割刖模組藉&晶粒切害懷置切割，以個片化 模組零件。 4干w 【0034】 [實施例2]〜[實施例4]、[比較例丨]〜[比較例4] μ根據的摻合，稍實補1 W的方狀職狀樹脂組 ，物，以/、貫施例1同樣的方式進行進行評價。結果如表1所 示0 貫施例1以外所使用的原料如以下所示。 •溶劑：乙二醇單丁基乙酸酯 ^ •硬化促進劑：2,4-二胺基-6-[2'·曱基咪唑基乙基_s_三 氮雜苯 2MZA四國化成公司製 •環氧樹脂：雙酚F型二環氧丙醚 YDF870GS(新曰鐵化學公司製） •硬化劑：甲基四氫鄰苯二曱酸酐 HN-2200-R日立化成工業公司製 【0035】 [比較例5] 將核=基板變更為日立化成工業公司製之CL_E_679FG(核 心材之250°C之彈性係數9GPa、面内方向線膨脹係數i5ppm、玻 璃轉移溫度190°C )’除此以外使用與模組用模擬電路基板&相同 設計的模組用模擬電路基板b，塗佈液狀樹脂組成物A。然而， 設置於塗佈機器人時之基板本身的翹曲大，無法實施塗佈。 【0036】 [比較例6] 使用將模組用模擬電路基板b之核心材層的厚度定為 201250950 6〇〇μπι，總厚度變更為65〇，之模組用模擬電路基板c ,塗 狀樹脂組成物A、硬化後，以與實施例丨同樣的 315，，在-I為55—。此ί割匕組全 體的尽度為約1.65mm。 【0037】 【表1】 19 201250950 比較例6 < 〇 600| OS vq 315 556 比較例5 < 200 ON >j〇 τ-^ ΝΑ ΝΑ 比較例4 X 〇 CO *〇 〇 I 380 1900 88% 77% 9 r—Η 〇〇 00 100以上: 6058 〇 Ο) Λ 200 〇 260 1.25 S 1827 比較例3 〇 〇 ψ Η 〇〇 Ό 〇 cn 240 丨 115〇| fNl 88% 75% 318l pi 00 5300 § CS cn cd 200 Ο 260 1.25 〇〇 1538 比較例2 ϋπ 〇 00 νο 〇 〇 m Ό I 240 I 116〇| <N «-Η 88% 1 75% 〇 〇 ηί; 4800 〇 <n — Λ 200 ο 260 1.25 ΊΎ1 1224 比較例1 〇 〇〇 〇 m 丨，24〇| I 116〇| CN 88% I 75% 378l 〇\ On 1-H α； τ—' 3300 240 r-^ cd '200 ο I 260 1.25 .356 652 實施例41 Q 〇 00 VO 〇 〇 cn CO 240 I 115〇| <N 88% 75% 138| σ\ ON ί—^ 1-H Γ 3700! 216 cd 200 ο 260 1.25 as 〇〇 m 805 實施例3 〇 〇 00 〇 cn 00 1 2401 | 115〇| (N ΓΛ 88% 75% ο ο 巧 T—< 4300 203 v〇 iri cd 200 ο 260 1.25 424 〇\ 實施例2 CQ ο 1-^ 〇〇 〇 〇 m m 丨 240 i 1160 <N 88% 76%! s ss CN Η 4100 224 (> r*^ c〇 200 ο 260 1.25 438 ό v〇 oo 實施例1 < ο 1—Η 00 ν〇 yn ο ΓΛ 1 一 24〇| 丨一 1150丨 CS r^* 88% I 75%| m ο *—Η 寸 3400： 232! 卜 Λ I 200 2 I 260 1.25 ί—Η | -731 者 Ν，Ν-雙(環氧乙基甲基)-4-(環氧乙基曱氧 基)苯胺 雙酚F型二環氧丙醚 Ί * &- >1 t0 蛑 4 '甲基•四氫鄰苯二曱酸酐 ，二氰二酲胺 ί2,4 -二胺基-6- [21-甲基咪唑基-(Γ)】-乙基 Ι-S-三氮雜笨 12-苯基-4-甲基咪唑 γ環氧丙基•丙基•三甲氧基矽烷 ¢- »1 铑 1 ΓΛ i4 溫 t0 時 S Ί ο S0-C3 HS-202 碳黑 敦 >1 /«—N 鸾 m 無 鸾 碟 cd Ph S a in 〇 cd 0. 1 ο 榣變'ft 0.5/5.0 熱黏度安定性 α 發 Ρ § CS (N 吞 ；〇 1—1 P 染 ；〇 \SclJ V &H 〇 CS tft| J 率 m 崩 /•""N 1 α 〇〇 (Ν 故 ι— Ρ α 〇. 發 戚 € €： ν@ r~i, Ρ y 培 羞 饀 S〇 Φ r—ι 1 S' 电 s *T- r^i 旦 S Cl ¥ -r- .lh J 液狀樹脂組成物之摻合 液狀樹脂組成物之特性 模組用模擬電路基板之 特性 • 1 分割前模組之特性 201250950 [產業上利用性] 【0038】 藉由本發明，可製作在使用 零件中’安裝時之翹曲少且更薄 產業上極有用。 了液狀樹脂密封材的半導體模組 的半導體模組零件，故本發明在 【圖式簡單說明】 【0007】 3 發明之半導體模組零件之-例的概略剖面圖 圖2顯示貫施例戶斤使用之模組用模擬電路基板的概略^面 【主要元件符號說明】 【0039】 1 ，心基板(模組用電路基板核心） 2樹脂層(模組用電路基板預浸體 3密封材 4裝载零件 5焊球 6通孔(模組用電路基板内部導通電路） 7防焊劑(模組用電路基板防焊劑） 21(e) Elastic coefficient, glass transition temperature: The liquid resin composition thus produced was placed in a specific mold at 150. (: A test piece was prepared by hardening for 3 hours. The elastic modulus was measured by a DMA setting device (manufactured by Seiko Instruments Co., Ltd.) at a temperature range of 〇 ° C to 300 ° C, and a temperature increase rate of 5 ° C per minute. The elastic modulus was stored. Further, the peak temperature of the tan3 curve measured at the same time was determined as the glass transition temperature. # The liquid resin composition produced was at 25. (The viscosity of the system was 143.5 rpm at 143 Pa·s, at 5.0. The rpm is lOOPa · s, the shake denaturation is 1.4, 25. (: the thermal expansion coefficient to 260 ° C is 3400 ppm, the elastic modulus at 25 〇 t is 7.7 GPa, and the glass transition temperature is 232 ° C. [0032] [Warness evaluation The liquid resin composition A is applied to the next module analog circuit board a. The module analog circuit board a uses an elastic coefficient of 25 〇〇c of 2 〇 Gpa and an in-plane direction linear expansion coefficient. L〇ppm, glass transition temperature of 26 (the core substrate made of rc core material (LaZ4785GS), the characteristics of the core material are evaluated by the following method. [The core material elastic coefficient] Copper foil of the core substrate is completely etched, and 1 is produced. A test piece of 5 mm x 2 mm was obtained by using a three-point bending test using Autograph AG-IS manufactured by Shimadzu Corporation. The measurement condition was a head speed of 0.5 mm/min and a fulcrum distance of 2 mm. C/min is heated at 20 ° C ~ 300 ° C, and the elastic coefficient of 250 ° C is measured. [Core material, _Yi ratio] ^ 16 8 201250950 The copper plate of the core substrate is fully engraved, making 5_2 ugly Using a TMA device (manufactured by TA Instruments), the copper core of the core substrate is 5. The linear expansion coefficient of the in-plane direction (XY direction) and the glass transition temperature of the core material (the glass transition temperature of the core material) The foil is completely etched and made into a DMA measuring device of 1〇mmx2〇mm (Seik0 is set to the glass transition temperature. [0033] The core layer of the core substrate is made to have a thickness of 2〇〇μηι, and in the core layer The upper and lower sides are respectively ΙΟμηι thick copper foil circuit, and the analog circuit substrate for the module of the copper foil circuit covered solder (PSR4000-AUS308). The schematic sectional view of the module analog circuit substrate is shown in Fig. 2. The size of the analog circuit board is 90x100mm and the total thickness is In the center of the substrate, the liquid resin composition A was applied to the center of the substrate by a coating robot (three-axis machine crying dispenser: manufactured by Musashi Hi-Tech Co., Ltd.) so that the thickness of the resin portion was 1 〇. 2 mm. The cloth size was 80x90 mm. The inner diameter of the needle for coating was 2 27 mm, and the coating dust was adjusted so that the coating pitch was 1.8 mm and the coating speed was 21 mm/s. The blank portion on the outer circumference of the coated substrate was stretched on a flat aluminum plate having a thickness of about 1 cm by a clip (a folder for the file), and hardened by i5 (rc) for 3 hours in an oven. After sufficiently cooled, The clip was taken out to obtain a resin-sealed substrate (pre-divided module). The substrate which was sealed with this resin was measured by a Shadow Moire measuring device (manufactured by AcroMetrix Co., Ltd.), and the warp was measured by resin coating at a normal temperature measuring substrate. In the measurement plane, the amount of warpage when the angle is adjusted so that the height (maximum value - minimum value = warpage amount) is the smallest is used as the measured value. The liquid composition A and the mold obtained in this manner The combination of the analog circuit board and the group is 411 μm at the normal temperature of the substrate after curing, and 731 μm at the substrate at 260 ° C. The substrate size is turned at normal temperature (the volume is preferably less than or equal to imm) 17 201250950 When the amount of light is more than or equal to imm, there is a problem in the use of die cutting. In addition, even at 26 (rc substrate _ volume is = bad or peeling. U is lmm M, I am afraid The internal parts are broken and formed by ^ The thickness of the whole module before splitting is about 125mm. The cutting module will be cut and cut by the cutting die to cut the module parts. 4 dry w [0034] [Example 2]~[Implementation Example 4], [Comparative Example] to [Comparative Example 4] The blending according to μ, the square-shaped resin group which was slightly supplemented with 1 W, was evaluated in the same manner as in Example 1. The results are shown in Table 1. The materials used in the following Examples 1 are as follows: • Solvent: ethylene glycol monobutyl acetate ^ • Hardening accelerator: 2,4-diamino-6-[ 2'·decyl imidazolylethyl_s_triazabenzene 2MZA manufactured by Shikoku Chemical Co., Ltd. • Epoxy resin: bisphenol F type diepoxypropyl ether YDF870GS (manufactured by Xinyi Iron Chemical Co., Ltd.) • Hardener: A Base tetrahydrophthalic anhydride HN-2200-R manufactured by Hitachi Chemical Co., Ltd. [0035] [Comparative Example 5] The core = substrate was changed to CL_E_679FG manufactured by Hitachi Chemical Co., Ltd. (the elastic modulus of the core material was 250 °C 9 GPa) In-plane direction linear expansion coefficient i5ppm, glass transition temperature 190°C) 'In addition to this, the analog circuit base for the same module as the module analog circuit board & b. The liquid resin composition A was applied. However, the warpage of the substrate itself provided in the coating robot was large, and coating could not be performed. [Comparative Example 6] The analog circuit board b for the module was used. The thickness of the core material layer is set to 201250950 6〇〇μπι, and the total thickness is changed to 65〇. The module is used for the analog circuit substrate c, the resin composition A is coated, and after hardening, the same as the embodiment 315, -I is 55. The overall degree of this ί cut group is about 1.65mm. [Table 1] 19 201250950 Comparative Example 6 < 〇 600| OS vq 315 556 Comparative Example 5 < 200 ON >j〇τ-^ ΝΑ ΝΑ Comparative Example 4 X 〇CO *〇〇I 380 1900 88 % 77% 9 r—Η 〇〇00 100 or more: 6058 〇Ο) Λ 200 〇260 1.25 S 1827 Comparative Example 3 〇〇ψ Η 〇 〇cn 240 丨115〇| fNl 88% 75% 318l pi 00 5300 § CS cn cd 200 Ο 260 1.25 〇〇 1538 Comparative Example 2 ϋπ 〇00 νο 〇〇m Ό I 240 I 116〇| <N «-Η 88% 1 75% 〇〇ηί; 4800 〇<n — Λ 200 ο 260 1.25 ΊΎ1 1224 Comparative Example 1 〇〇〇〇m 丨,24〇| I 116〇| CN 88% I 75% 378l 〇\ On 1-H α; τ—' 3300 240 r-^ cd '200 ο I 260 1.25 .356 652 Example 41 Q 〇00 VO 〇〇cn CO 240 I 115〇| <N 88% 75% 138| σ\ ON ί—^ 1-H Γ 3700! 216 cd 200 ο 260 1.25 as 〇〇m 805 Example 3 〇〇00 〇cn 00 1 2401 | 115〇| (N ΓΛ 88% 75% ο ο 巧 T—< 4300 203 v〇iri cd 200 ο 260 1.25 424 〇\ Example 2 CQ ο 1-^ 〇〇〇mm 丨240 i 1160 <N 88% 76%! s ss CN Η 4100 224 (> r*^ c〇200 ο 260 1.25 438 ό v〇oo Example 1 < ο 1—Η 00 ν 〇yn ο ΓΛ 1 〇24〇| 丨一1150丨CS r^* 88% I 75%| m ο *—Η inch 3400: 232! Λ I 200 2 I 260 1.25 ί—Η | -731 Ν, Ν-bis(oxiranylethyl)-4-(epoxyethyl decyloxy)aniline bisphenol F type diglycidyl oxime * &- >1 t0 蛑4 'methyl•tetrahydrogen O-phthalic anhydride, dicyanodiamide ί2,4-diamino-6-[21-methylimidazolyl-(fluorene)]-ethyl hydrazine-S-triazaphenyl 12-phenyl-4 -Methylimidazole γ-glycidyl-propyl-trimethoxydecane ¢- »1 铑1 ΓΛ i4 When t0 is S Ί ο S0-C3 HS-202 Carbon Blacktown>1 /«—N 鸾m No Cd cd Ph S a in 〇cd 0. 1 ο 榣 ' 'ft 0.5/5.0 Thermal viscosity stability α hair § CS (N 吞; 〇 1-1 P dye; 〇 \SclJ V & H 〇 CS tft | J rate m collapse /•""N 1 α 〇〇(Ν ι ι— Ρ α 〇. 戚 € €: ν@ r~i, Ρ y 培 饀 饀 S〇Φ r—ι 1 S' Electric s *T- r^i S Cl ¥ -r- .lh J Characteristics of liquid resin composition blended with liquid resin composition Characteristics of analog circuit board for module • 1 Characteristics of module before division 201250950 [Industrial use] [0038] According to the present invention, it is possible to produce an industry that is less likely to be warped during installation and is thinner in the use of parts. The semiconductor module component of the semiconductor module of the liquid resin sealing material, the present invention is briefly described in the drawings. [0007] The schematic sectional view of the semiconductor module component of the invention is shown in FIG. Outline of the analog circuit board for the module used in the module [Description of the main components] [0039] 1 , core substrate (core of the circuit board for the module) 2 resin layer (circuit board prepreg 3 for the module) Mounting parts 5 solder balls 6 through holes (inside circuit circuit for module circuit) 7 solder resist (circuit board solder mask for module) 21