TW201250873A - Manufacturing method of semiconductor apparatus, manufacturing method of semiconductor wafer with semiconductor device, manufacturing method of semiconductor wafer with adhesive layer and manufacturing method of semiconductor wafer laminate - Google Patents

Manufacturing method of semiconductor apparatus, manufacturing method of semiconductor wafer with semiconductor device, manufacturing method of semiconductor wafer with adhesive layer and manufacturing method of semiconductor wafer laminate Download PDF

Info

Publication number
TW201250873A
TW201250873A TW101116925A TW101116925A TW201250873A TW 201250873 A TW201250873 A TW 201250873A TW 101116925 A TW101116925 A TW 101116925A TW 101116925 A TW101116925 A TW 101116925A TW 201250873 A TW201250873 A TW 201250873A
Authority
TW
Taiwan
Prior art keywords
semiconductor
adhesive layer
semiconductor wafer
adhesive
layer
Prior art date
Application number
TW101116925A
Other languages
Chinese (zh)
Inventor
Kazuyuki Mitsukura
Keisuke Ookubo
Tetsuya Enomoto
Takashi Masuko
Akira Nagai
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2011106342A external-priority patent/JP2012238704A/en
Priority claimed from JP2011106331A external-priority patent/JP5891605B2/en
Priority claimed from JP2011106322A external-priority patent/JP2012238699A/en
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201250873A publication Critical patent/TW201250873A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13005—Structure
    • H01L2224/13009—Bump connector integrally formed with a via connection of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/1308—Plural core members being stacked
    • H01L2224/13082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13116—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H01L2224/141—Disposition
    • H01L2224/1418—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/14181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/16146—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the bump connector connecting to a via connection in the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
    • H01L2224/27416—Spin coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/278—Post-treatment of the layer connector
    • H01L2224/27848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
    • H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83193—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/9202—Forming additional connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

A manufacturing method of a semiconductor apparatus of the invention includes the followings. A liquid photosensitive adhesive is coated on a circuit surface of a semiconductor wafer to form a photosensitive adhesive layer, wherein the semiconductor wafer having the circuit surface where a plurality of metal bumps are formed thereon. The photosensitive adhesive layer is B-stagized by irradiating light to obtain a semiconductor wafer with adhesive layer. The semiconductor wafer of the semiconductor wafer with adhesive layer and the adhesive layer are cutted off together into a plurality of semiconductor devices and to obtain a plurality of semiconductor devices with adhesive layer. The semiconductor devices with adhesive layer are contact bonding with another semiconductor device or support member for mounting semiconductor device in the manner of the adhesive layer of the semiconductor devices with adhesive layer is sandwiched therebetween.

Description

201250873 • «W V 4- ^ Λ Λ. 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體裝置的製造方法、附有半 導體元件的半導體晶圓的製造方法、附有接著劑層的半導 體晶圓的製造方法以及半導體晶圓積層體的製造方法。 【先前技術】 伴隨著近年來的半導體器件的高功能化、小型化，正 在進行將半導體元件以面朝下構造搭載於配 線電路基板上的覆晶封裂（flip chip package )。於覆晶封誓 中，通常為了保護半導體元件而對半導體元件與配線電路 基板的間隙進行樹脂密封。作為樹脂密封的式， 入方式或先供給方式，上述後加入方式是=與= 接後注入低黏度的液狀樹脂，上述先供給方式是於基板上 设置底部填充材後搭載晶片。進而，關於先供給方式，有 塗佈液狀樹脂的方法與貼附膜狀樹脂的方法。 關於後加入方式，若晶片及基板不斷地窄間隙化、窄 間距化’難麟不產纽_料下填綠_脂，而 且不適於大量生產。 於以先供給方式塗佈液狀樹脂的情形時，難以對分配 器的精密塗佈量進行控制。特別於安裳近年來經薄型化的 晶片的情形時，若塗佈量過多，則接合時滲出的樹脂沿著 晶片的側面攀攸，污染接合卫具。因此，於該方式中必須 清洗工具’量產時的步驟變得煩雜。 、 另-方面，於使用膜狀樹脂的情形時，可容易地藉由 201250873 42601pif201250873 • «WV 4- ^ Λ Λ. VI. Description of the Invention: [Technical Field] The present invention relates to a method of manufacturing a semiconductor device, a method of manufacturing a semiconductor wafer with a semiconductor element, and an adhesive A method of manufacturing a semiconductor wafer of a layer and a method of manufacturing a semiconductor wafer laminate. [Prior Art] With the recent increase in the functionality and miniaturization of semiconductor devices, a flip chip package in which a semiconductor element is mounted on a wiring circuit board in a face-down configuration is being performed. In the flip-chip sealing, the gap between the semiconductor element and the printed circuit board is usually resin-sealed in order to protect the semiconductor element. As the resin sealing type, the feeding method or the first feeding method, the above-described post-adding method is to inject a low-viscosity liquid resin after the connection with the =, and the first supply method is to mount the wafer after the underfill material is provided on the substrate. Further, regarding the first supply method, there are a method of applying a liquid resin and a method of attaching a film-like resin. Regarding the post-addition method, if the wafer and the substrate are continuously narrowly narrowed and narrowly pitched, it is not suitable for mass production. In the case where the liquid resin is applied by the first supply method, it is difficult to control the precise coating amount of the dispenser. In particular, in the case where Anshang has been thinned in recent years, if the amount of coating is too large, the resin which bleeds during bonding climbs along the side surface of the wafer, contaminating the bonding fixture. Therefore, in this mode, the steps of the cleaning tool must be complicated when it is mass-produced. And, in other respects, in the case of using a film-like resin, it can be easily used by 201250873 42601pif

，整膜的厚度而賦予最適合的樹脂量，但需要被稱為暫時 廢接步驟的將膜狀樹脂貼附於基板上的步驟。通常，暫時 步驟中，準備經切條（slit)成較對象晶片的寬度更大 ΐΐί的捲狀接著鮮，根據晶片尺寸來切祕材上的接 ▼’並於接著财反應的程度的溫度*於基板上進行 二I：接然而，難以於晶片搭載位置上以良好的精度供仏 膜，而且與微小晶片等相對應的窄寬度的捲加工固難，因D ΐίΐί了確保良率，而藉由將暫時壓接中貼附的膜設定 來對應。因此’於該方式中，必須寬裕 又田:、祕令件的距離，難以與高密度化安裝相對應。 、取近，作為高密度化安裝技術之一，正在研究 著劑層的半導體晶圓，使用由該晶圓所得 以下方法：準備貼附有膜狀接著劑的晶圓，對該 進仃磨削後，將晶圓與接著劑-併切斷而晶片 化’藉此製作於晶片上附著有尺 ^曰曰片 =附有膜狀接·的晶片，將其ϋ於電路基板:: t導體裝置。另外’下述專利文獻2中研究了^^方^ 力^=將含有溶劑的樹脂糊塗佈於半導體晶圓上，藉由 π·，、、乾燥而使所塗佈的樹脂糊B階化。 3 先前技術文獻 專利文獻 專利文獻1 .日本專利特開2006_049482 專利文獻2.日本專利特開2009 38349號公報 2? 5 201250873 對於上述專利文獻1的方法而言，於在具有形成有金 f凸塊的電路面的半導體晶圓的電路面上設置接著劑層的 情形時’難以於凸塊周邊部以不殘存_ (孔隙）的方式 貼附膜狀的接著劑。 另一方面，上述專利文獻2的方法有以下問題：使用 含有溶劑的樹脂糊，或為了進行㈣化而需要長時間，或 由溶劑導致半導體晶圓受到污染。另外有以下問題：由用 j使溶劑揮發的加熱導致磨削後發生晶圓翹曲等。若於低 溫下乾燥，則可於某種程度上抑制由加熱導致的不良狀 况，但該情形時殘存溶劑變多，故有以下傾向：壓 熱硬化時產生孔隙或剝離，可靠性下降。另外，若為^降 =乾燥溫度而使用低沸點溶劑，則有以下傾向：於使用過 ^中黏度大幅度地變化’或於乾燥時接著繼表面的溶劑 進行揮發，由此導致内部殘存溶劑，可靠性下降。 【發明内容】 本發明疋繁於上述情況而成，其目的在於提供一種 有，著劑層的半導體晶圓的製造方法，以及使用此種附= 接著劑層的半導體晶圓的半導體裝置的製造方法、附有 =元件的半導體晶圓的製造方法及半導體晶圓積層體的 ;造方法，上述附有接著劑層的半導體晶圓的製造方法可 獲得能充分減少凸塊部分的孔隙、而且充分減小磨削後可 翹曲的附有接著劑層的半導體晶圓。 的 ^為了解決上述課題，本發明提供第1半導體裴置的 込方法，其包括以下步驟：於具有形成有金屬凸塊的電略 201250873 4260lpif 面之半導體晶圓的電路面上，塗佈液狀感光性接著劑，形 成感光性接著劑層；藉由光照射使感光性接著劑層B ^ 化’獲得附有接著劑層的半導體晶圓；將附有接著劑岸: 半導體晶m之半導體晶圓與接著劑層—併切斷，切分&多 個半導，元件，獲得财接著歸的半導體元件；以及^ 附有接著劑層的半導體元件之接著·夾在附有接著劑声 的半導體元件與其他半導體元件之間或附有接著劑層二^ 導體元件與半導體元件搭細支撐構件之㈣進行^接。 本說明書中所謂液狀是指於25。〇、丨atm具有流動性。 根據本發明的第1半導體裝置的製造方法，使用液狀 f光性接著劑並藉由光照射進行B階化而設置接著劑層， 藉此可獲得能充分減少凸塊部分的孔隙、並且不易產生由 加熱引起的不良狀況的附有接著劑層的半導體晶圓。因 此，可充为減小半導體晶圓的磨削後的勉曲，可容易地獲 知連接性優異的附有接著劑層的半導體元件，可製造可靠 性優異的半導體裝置。 於本發明的第1半導體裝置的製造方法中，較值為上 述液狀感光性接著劑含有（A)放·聚合性化合物、⑻ 光起始劑及（C)熱硬化性樹脂，⑷成分含有於讲為 液狀且分子内具有—個碳_碳雙鍵的化合物。 藉由使用上述液狀感光性接著劑，可不使用溶劑而塗 =於基材上’可藉由對該塗膜進行光照射秘成薄滕的接 著劑層。而且’無需進行用以使溶劑乾燥的加熱，故可充 分抑制由減動鱗發成分所導_產生針孔的情沈。進 7 201250873 τχ-υν/ ιριΓ 而’可充分消除使用含有溶劑 上述問題。 的先前的樹脂糊(paste)時的 並且可充分降低接著劑 第1半導體裂置的製造方法中，較佳為液 =光性接者_溶劑含量為5質量％以下或不含溶劑。 藉此，可進一步抑制孔隙的產生， 層表面的黏著力 另外 錄綠感紐接著劑的塗佈性或接著劑層 ===點而言’較佳為液狀感光“ 寄片的黏度為1〇1111^〜3〇〇〇〇姑的。 本說明書所謂液狀感光性接著劑於坑的黏度， 指使用東料賴造所製造的EHD魏轉減計，ς樣 品量為0.4 mL、3。圓錐的條件下於坑測定的黏度的值。 進而，較佳為藉由光照射進行B階化後的感光性接著 4層於25 C的黏著強度為200 gf以下。藉此，B階化後 操作性進一步提高。 一另外，就形成膜厚均勻性優異的接著劑層的觀點而 5 ’較佳為藉由旋塗法來塗佈液狀感光性接著劑。 另外，本發明提供一種半導體裝置，其是藉由本發明 的第1的半導體裝置的製造方法而獲得。 另外，本發明提供第1附有半導體元件的半導體晶圓 的製造方法，其包括以下步驟：於具有形成有金屬凸塊的 電路面之半導體晶圓的電路面上，塗佈液狀感光性接著 劑’形成感光性接著劑層；藉由光照射使感光性接著劑層 B階化’獲得附有接著劑層的半導體晶圓；將附有接著劑 201250873 4260lpif 層的半導體晶圓之半導體晶圓與接著劑層一併切斷，切分 成多個半導體元件，獲得附有接著劑層的半導體元件；以 及將附有接著劑層的半導體元件之接著劑層夾在第2半導 體晶圓與附有接著劑層的半導體元件之間並進行壓接。 於本發明的第1附有半導體元件的半導體晶圓的製造 方法中，較佳為上述液狀感光性接著劑含 聚合性化合物'⑻光㈣概⑹熱硬化騎脂， ϋ含有於沉為液狀縣子内具有—個碳碳雙鍵的化 σ物。 灿下另二=液狀感光性接著劑的溶劑含量為5質量 的tit ’就提高液狀感紐接著劑的塗佈性或接著劑層 ;=:===，感光性接 劑層==^=_的感光性接著 成f厚均句性優異的接著劑層的觀點而 4為精峡塗法來塗佈液域絲接著劑。 鬥f :卜二本發明提供—種附有半導體元件的半導體曰 的製造方法而獲得。附有+導體元件的半導體晶圓 製造3，’ 附有接著劑層的半導體晶圓的 路面之半導許步驟：於具有形成有金屬凸塊的電 日曰的包路面上，塗佈液狀感光性接著劑， 201250873 形成感光性接著劑層，以及藉由光照射使感光性接著劑廣 B階化。 根據本發明的第1附有接著劑層的半導體晶圓的製造 方法，可獲得能充分減少凸塊部分的孔隙、而且充分減小 磨削後_曲的附有接著劑層的半導體晶圓。根據此種附 有接著劑層的半導體晶1]，可充分減小半導體晶圓的磨削 後的翹曲’可容易地獲得連接性優異的附有接著劑層的半 導體元件，可製造可靠性優異的半導體裝置。 於本發明的第1附有接著劑層的半導體晶圓的製造方 法中，較佳為上述液狀感光性接著劑含有（A)放射線聚 合性化合物、⑻光起始航（c)熱硬化性樹脂，⑷ 成分含有於25C為液狀且分子内具有一個碳_碳雙鍵的化 合物。 另外，較佳為液狀感光性接著劑的溶劑含量為5質量 %以下或不含溶劑。 另外，就提高液狀感光性接著劑的塗佈性或接著劑層 的薄膜化、面内均勻性的觀點而言，較佳為液狀感光性接 著劑於25°C的黏度為l〇mpa.s〜3〇〇〇〇mPaes。 進而，較佳為藉由光照射進行B階化後的感光性接著 劑層於25°C的黏著強度為200 gf以下。 另外，就形成膜厚均勻性優異的接著劑層的觀點而 言，較佳為藉由旋塗法來塗佈液狀感光性接著劑； 另外，本發明提供一種附有接著劑層的半導體晶圓， 其疋藉由本發明的第1附有接著劑層的半導體晶圓的製造 201250873 42601pif 方法而獲得。 本發明提供第2半導體裝置的製造方法，其包括以下 步驟.於具有形成有金屬凸塊的電路面之第1半導體晶圓 的電路面上’塗佈液狀感紐接著劑，形減光性接著劑 層；藉由光照射使感光性接著劑層B階化，獲得附有接著 劑層的半導體晶圓；將附有接著劑層的半導體晶圓之接著 劑層夾在附有接著_的半導體晶圓與第2半導體晶圓之 ，並進行壓接’獲得半導體晶uj積層體；以及將半導體晶 圓積層體靖’切分成積層有半導體元件辭導體元件積 層體。 很儺桊發明的弟2半導體裝置的製造方法，使用液沐 感光性接著劑並藉由光照射進行B階化而設置接著劑層 藉此可獲得能充分減少凸塊部分的孔隙、並且不易發生㈢ 加熱引^的不良狀況騎有接著綱的半導體晶圓，由自 附有接著綱的半導體晶圓而獲得半導體晶圓積層體，^ 了充刀減小半導體晶圓的磨削後的翹曲藉此可實現肩 備積層有多辨導體元件的構造之半導體裝置的薄型化。The thickness of the film is adjusted to give the most suitable amount of resin, but a step of attaching the film-like resin to the substrate, which is called a temporary waste step, is required. Usually, in the temporary step, a slit is prepared to be slit to a width larger than the width of the target wafer, and the temperature on the secret material is cut according to the wafer size and the temperature of the subsequent reaction is * It is difficult to supply the film with good precision at the wafer mounting position, and it is difficult to process a narrow width corresponding to a micro wafer or the like, and it is difficult to ensure the yield by D ΐ ΐ ΐ 确保Corresponding to the setting of the film attached to the temporary pressure bonding. Therefore, in this method, it is necessary to be wide and the field: the distance of the secret member is difficult to correspond to the high-density mounting. In the vicinity of the high-density mounting technology, a semiconductor wafer of a coating layer is being studied, and the following method is used for the wafer: a wafer to which a film-like adhesive is attached is prepared, and the wafer is ground. Thereafter, the wafer and the adhesive are cut and waferd. Thus, a wafer having a film attached to the wafer is attached to the wafer, and the wafer is attached to the circuit substrate: t conductor device . Further, in the following Patent Document 2, the resin paste containing a solvent is applied onto a semiconductor wafer, and the applied resin paste is B-staged by π·, and drying. 3 PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1 Japanese Patent Laid-Open Publication No. Hei. No. 2009-049482 Patent Document 2. Japanese Patent Laid-Open Publication No. 2009-38349 No. In the case where an adhesive layer is provided on the circuit surface of the semiconductor wafer on the circuit surface, it is difficult to attach a film-like adhesive agent to the peripheral portion of the bump so as not to remain (pores). On the other hand, the method of Patent Document 2 has a problem that it takes a long time to use a resin paste containing a solvent, or a semiconductor wafer is contaminated by a solvent for the purpose of (4). In addition, there is a problem that wafer warpage or the like occurs after grinding by heating by v-vaporizing the solvent. When it is dried at a low temperature, the deterioration due to heating can be suppressed to some extent. However, in this case, the amount of residual solvent increases. Therefore, there is a tendency that pores or peeling occur during autoclaving, and reliability is lowered. Further, when a low boiling point solvent is used for the lowering of the drying temperature, there is a tendency that the viscosity is greatly changed during use, or the solvent which is subsequently applied to the surface is volatilized during drying, thereby causing the internal solvent to remain. Reliability is declining. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the invention is to provide a method for fabricating a semiconductor wafer having a coating layer, and a semiconductor device using the semiconductor wafer with such a coating layer. Method, method for manufacturing a semiconductor wafer with a device, and method for fabricating a semiconductor wafer laminate; the method for fabricating a semiconductor wafer with an adhesive layer can sufficiently reduce pores of a bump portion and sufficiently A semiconductor wafer with an adhesive layer that is warpable after grinding is reduced. In order to solve the above problems, the present invention provides a method for fabricating a first semiconductor device, comprising the steps of: coating a liquid on a circuit surface of a semiconductor wafer having a 201250873 4260 lpif surface on which a metal bump is formed. a photosensitive adhesive, forming a photosensitive adhesive layer; B-forming the photosensitive adhesive layer by light irradiation to obtain a semiconductor wafer with an adhesive layer; and a semiconductor crystal with an adhesive agent: semiconductor crystal m a circle and an adhesive layer - and cut, split & a plurality of semiconductors, components, and semiconductor components; and a semiconductor component with an adhesive layer followed by an adhesive attached The semiconductor element and the other semiconductor element are bonded to the (four) with the adhesive layer and the semiconductor element. The term "liquid" as used in this specification means 25. 〇, 丨atm have fluidity. According to the method for fabricating a first semiconductor device of the present invention, by using a liquid f-light adhesive and B-staged by light irradiation, an adhesive layer is provided, whereby it is possible to sufficiently reduce voids in the bump portion and to be difficult. A semiconductor wafer with an adhesive layer that causes a defect caused by heating. Therefore, it is possible to reduce the distortion of the semiconductor wafer after grinding, and it is possible to easily obtain a semiconductor element with an adhesive layer excellent in connectivity, and to manufacture a semiconductor device having excellent reliability. In the method for producing a first semiconductor device of the present invention, the liquid photosensitive adhesive contains (A) a polymerizable compound, (8) a photoinitiator, and (C) a thermosetting resin, and the component (4) contains A compound which is liquid and has a carbon-carbon double bond in the molecule. By using the liquid photosensitive adhesive, it is possible to apply a coating layer on the substrate without using a solvent. Further, the heating for drying the solvent is not required, so that it is possible to sufficiently suppress the occurrence of pinholes caused by the reduction of the scale component. In 7 201250873 τχ-υν/ ιριΓ and ' can completely eliminate the use of solvents containing the above problems. In the case of the prior resin paste, the adhesive can be sufficiently reduced. In the method for producing the first semiconductor chip, it is preferred that the liquid = photoreceptor has a solvent content of 5% by mass or less or no solvent. Thereby, the generation of pores can be further suppressed, and the adhesion of the surface of the layer is additionally recorded by the coating property of the green sensor or the layer of the adhesive layer === point is preferably liquid photosensitive. The viscosity of the carrier is 1 〇1111^~3〇〇〇〇姑。 The viscosity of the liquid photosensitive adhesive in the pit in this manual refers to the EHD Wei-reduction meter manufactured by Toray Industries, Ltd., and the sample amount is 0.4 mL, 3. The value of the viscosity measured in the pit under the condition of a cone. Further, the photosensitive property after B-staged by light irradiation is preferably 200 gf or less at 25 C or less. Further, in order to form an adhesive layer having excellent film thickness uniformity, it is preferable to apply a liquid photosensitive adhesive by a spin coating method. Further, the present invention provides a semiconductor device. Further, the present invention provides a method of manufacturing a semiconductor device according to a first aspect of the present invention. The present invention provides a method of manufacturing a semiconductor wafer with a semiconductor device, comprising the steps of: forming a metal bump; Circuit surface semiconductor wafer On the road surface, a liquid photosensitive adhesive is applied to form a photosensitive adhesive layer; the photosensitive adhesive layer is B-staged by light irradiation to obtain a semiconductor wafer with an adhesive layer; an adhesive 201250873 is attached thereto. The semiconductor wafer of the semiconductor wafer of the 4260 lpif layer is cut together with the adhesive layer, and is divided into a plurality of semiconductor elements to obtain a semiconductor element with an adhesive layer; and an adhesive layer of the semiconductor element with the adhesive layer attached thereto The first semiconductor wafer is sandwiched between the second semiconductor wafer and the semiconductor element with the adhesive layer, and is bonded to the semiconductor element with the semiconductor element. The liquid photosensitive method is preferably used in the method of manufacturing the semiconductor wafer with the semiconductor element of the present invention. The following agent contains a polymerizable compound '(8) light (four) (6) heat-hardened riding fat, and yttrium contains a carbon-carbon double bond in the sinking liquid county. The second two = liquid photosensitive adhesive The solvent content of 5 masses of titer improves the applicability of the liquid-like adhesive or the adhesive layer; =:===, the photosensitive adhesive layer ==^=_ is photosensitive and then becomes thick The sentence layer is excellent in the layer of the adhesive layer and the 4 is fine The coating method is applied to apply a liquid-based wire bonding agent. Buckf: The second invention provides a method for manufacturing a semiconductor device with a semiconductor element. The semiconductor wafer with a +-conductor element is manufactured 3, 'with a semi-conductive step of a pavement of a semiconductor wafer of a coating layer: coating a liquid photosensitive adhesive on a pavement having an electric corona formed with metal bumps, forming a photosensitive adhesive layer in 201250873, and by forming a photosensitive adhesive layer The light irradiation causes the photosensitive adhesive to be broadly B-staged. According to the method for producing a semiconductor wafer having the adhesive layer of the first aspect of the present invention, it is possible to sufficiently reduce the voids of the bump portion and sufficiently reduce the grinding. A semiconductor wafer with an adhesive layer attached thereto. According to such a semiconductor crystal 1] with an adhesive layer, the warpage after grinding of the semiconductor wafer can be sufficiently reduced, and an excellent connection property can be easily obtained. A semiconductor device having an adhesive layer can produce a semiconductor device excellent in reliability. In the method for producing a semiconductor wafer with an adhesive layer according to the first aspect of the invention, it is preferable that the liquid photosensitive adhesive contains (A) a radiation polymerizable compound, and (8) a light-initiating (c) thermosetting property. Resin, (4) The component contains a compound in which 25C is liquid and has one carbon-carbon double bond in the molecule. Further, the liquid photosensitive adhesive preferably has a solvent content of 5% by mass or less or no solvent. Moreover, from the viewpoint of improving the coatability of the liquid photosensitive adhesive or the film formation and in-plane uniformity of the adhesive layer, it is preferred that the viscosity of the liquid photosensitive adhesive at 25 ° C is l〇mpa. .s ~3〇〇〇〇mPaes. Further, it is preferable that the photosensitive adhesive layer which has been B-staged by light irradiation has an adhesive strength at 25 ° C of 200 gf or less. Further, from the viewpoint of forming an adhesive layer having excellent film thickness uniformity, it is preferred to apply a liquid photosensitive adhesive by a spin coating method; in addition, the present invention provides a semiconductor crystal with an adhesive layer The circle is obtained by the method of manufacturing the first semiconductor wafer with the adhesive layer of the present invention, 201250873 42601pif. The present invention provides a method of manufacturing a second semiconductor device, comprising the steps of: applying a liquid-like adhesive to a circuit surface of a first semiconductor wafer having a circuit surface on which a metal bump is formed, and dimming a coating layer; a B-stage of the photosensitive adhesive layer by light irradiation to obtain a semiconductor wafer with an adhesive layer; and an adhesive layer of the semiconductor wafer with the adhesive layer attached thereto The semiconductor wafer and the second semiconductor wafer are pressure-bonded to obtain a semiconductor crystal layer stack; and the semiconductor wafer laminate body is cut into a laminated semiconductor element conductor layer. In the method of manufacturing a semiconductor device of the invention 2, the use of a liquid photosensitive adhesive and B-staged by light irradiation to provide an adhesive layer can thereby sufficiently reduce the porosity of the bump portion and is less likely to occur. (3) Inadequate conditions of the heating lead The semiconductor wafer is attached to the semiconductor wafer, and the semiconductor wafer is obtained by attaching the semiconductor wafer to the next step. The filling is used to reduce the warpage of the semiconductor wafer after grinding. Thereby, it is possible to achieve a reduction in thickness of a semiconductor device having a structure in which a plurality of conductor elements are stacked.

於本《月的第2半導體裝置的製造方法中，較佳為』 f液狀感紐接著劑含有⑷放射線聚合性化合物、（B 2始㈣及（C)熱硬化性樹脂，（A)成分含有於饥為 液狀且57子内具有—個碳·碳雙鍵的化合物。 ，由使用上述液狀感雜接著劑，可不使用溶劑而塗 芸^材上’謂由對該塗酸行光照射而形成薄膜的接 ^ 而且，無需進行用以使溶劑乾燥的加熱，故可充 201250873. 刀抑制由減贼揮發成分導致產生針孔的情況。進而， 可充分 >肖除使齡有溶劑的先前的樹脂_的上述問題。 另外’上躲狀感紐接著触於經B階化後熱時流動性 優異’故可對被_體進行良好的減接。藉此，可使將 半導體讀彼此接著的接著劑的層形成㈣薄。 於本發明的第2半導體裝置的製造方法中，較佳為液 ^感光性接著劑的溶劑含量為5胃量％以下或不含溶劑。 藉此’可進-步抑制·生，並且充分降低 表面的黏著力。 $曰 *另外，就提高液狀感光性接著劑的塗佈性或接著劑層 ，薄膜化、面内均勻性的觀點而言，較佳為液狀感光性接 著劑於25°C的黏度為1〇 mPa.s〜30000 mPa.s。 進而，較佳為藉由光照射進行B階化後的感光性接著 劑層於25。〇的黏著強度為200 gf以下。藉此，B階化後的 操作性進一步提高。 另外’就形成膜厚均勻性優異的接著劑層的觀點而 5 ’較佳為藉由旋塗法來塗佈液狀感光性接著劑。 另外’本發明提供一種半導體裝置，其是藉由本發明 的第2半導體裝置的製造方法而獲得。 另外’本發明提供第丨半導體晶圓積層體的製造方 法，其包括以下步驟：於具有形成有金屬凸塊的電路面之 第1半導體晶圓的電路面上，塗佈液狀感光性接著劑，形 成感光性接著劑層；藉由光照射使感光性接著劑層B階 化’獲得附有接著劑層的半導體晶圓；以及將附有接著劑In the second method of manufacturing a semiconductor device of the present invention, it is preferable that the f liquid-like adhesive contains (4) a radiation polymerizable compound, (B 2 (4), and (C) a thermosetting resin, and (A) component. It is a compound containing a carbon-carbon double bond in a liquid state and having a carbon-carbon double bond in 57. By using the above liquid-like adhesive adhesive, it can be coated with a solvent without using a solvent. The film is formed by irradiation, and heating for drying the solvent is not required. Therefore, it can be charged 201250873. The knife suppresses pinholes caused by the volatile component of the thief. Further, it can sufficiently remove the solvent. The above problem of the previous resin _. In addition, the 'hide-insensitive feeling is then excellent in fluidity when it is heated after B-staged', so that the _ body can be well-reduced. Thereby, the semiconductor can be read. In the method for producing a second semiconductor device of the present invention, it is preferable that the solvent content of the liquid photosensitive adhesive is 5 grit% or less or no solvent. Can be step-inhibited, and fully reduce the surface曰* In addition, it is preferable that the liquid photosensitive adhesive is at 25 ° C from the viewpoint of improving the coatability of the liquid photosensitive adhesive or the adhesive layer, thin film formation, and in-plane uniformity. The viscosity is from 1 〇 mPa.s to 30,000 mPa·s. Further, the photosensitive adhesive layer after B-staged by light irradiation is preferably 25. The adhesion strength of ruthenium is 200 gf or less. Further, the workability after the gradation is further improved. Further, from the viewpoint of forming an adhesive layer having excellent film thickness uniformity, it is preferable to apply a liquid photosensitive adhesive by a spin coating method. A semiconductor device obtained by the method for fabricating a second semiconductor device of the present invention. Further, the present invention provides a method of manufacturing a second semiconductor wafer laminate, comprising the steps of: forming a circuit having metal bumps formed thereon On the circuit surface of the first semiconductor wafer, a liquid photosensitive adhesive is applied to form a photosensitive adhesive layer, and the photosensitive adhesive layer is B-staged by light irradiation to obtain a semiconductor with an adhesive layer. Wafer; and will be attached Preparation

S 12 201250873 4260lpif 層的半導體晶圓之接著則爽麵有接著綱的半導體晶 圓與第2半導體晶圓之間並進行壓接，獲得半導體晶圓積 層體》 根據本發明的第1半導體晶圓積層體的製造方法，使 用液狀感練接著舰藉由絲㈣行B階化㈣置接著 劑層，藉此可獲得能充分減少凸塊部分的⑽、並且不易 產生由加熱引起的不良狀況的附有接著劑層的半導體晶 圓，，細有接著綱的半導體晶圓獲得半導體晶圓積層 體，藉此可獲得能充分減小磨職她曲的半導體晶圓積 層體。 於本發明的第1半導體晶圓積層體的製造方法中，較 佳為上述液狀感紐接著劑含有⑷放射絲合性化合 物、（B)光起始劑及（C)熱硬化賴脂，⑷成分含有 於25C躲狀且分㈣具有-個碳_碳雙_化合物。 另外，較佳為液狀感光性接著劑的溶劑含量為5質量 °/〇以下或不含溶劑。 另外，就提鬲液狀感光性接著劑的塗佈性或接著劑層 ，薄膜化、勻㈣觀點而言，較佳為綠感光性接 著劑於25 C的黏度為1〇 mpa.s〜％⑻〇 mpa.s。 進而，較佳為藉由光照射進行B階化後的感光性接著 劑層於25°C的黏著強度為200 gf以下。 _另外，，形成膜厚均勻性優異的接著劑層的觀點而 s，較佳為藉由旋塗法來塗佈液狀感光性接著劑。 另外，本發明提供一種半導體晶圓積層體，其是藉由 η 13 201250873 本發明的第1半導體晶圓積層體的製造方法而獲得。藉由 本發明的方法而獲得的半導體晶圓積層體的孔隙充分少， 且可充分減小磨削後的翹曲。另外’該半導體晶圓積層體 由於積層有半導體晶圓，故於強度方面亦優異，容易搬送， 可使具備積層有多個半導體元件的構造之半導體裝置的製 造更為容易。 本發明提供第3半導體裝置的製造方法，其包括以下 步驟：於具有形成有金屬凸塊的電路面之半導體晶圓的電 路面上，塗佈兩種以上的液狀感光性接著 光照射，藉此設置經B階化的接著劑層，丄= 層的半導體晶®，經B階化的接著舰具有2層以上的構 造且最表⑽含杨焊織分；_ 晶圓之半導體晶圓與接著劑声，曰？千等體 體元件，獲得附有接著劑層:半導體元件刀 半導體元件之接著劑層 接 其他半導體元件之間或附有接著劑層的i =S 12 201250873 4260lpif The semiconductor wafer of the layer is subsequently bonded between the semiconductor wafer and the second semiconductor wafer to obtain a semiconductor wafer laminate. The first semiconductor wafer according to the present invention. In the method for producing a laminate, the liquid layer is used to form a B-stage (four) adhesive layer by the wire (four), whereby (10) which can sufficiently reduce the bump portion and which is less likely to cause a problem caused by heating can be obtained. A semiconductor wafer with an adhesive layer is provided, and a semiconductor wafer laminate having a fine semiconductor wafer is obtained, whereby a semiconductor wafer laminate which can sufficiently reduce the wear and tear is obtained. In the method for producing a first semiconductor wafer laminate according to the present invention, it is preferable that the liquid sensor has a (4) a radiation-based compound, (B) a photoinitiator, and (C) a thermosetting lysate. (4) The component is contained in 25C and has a carbon-carbon double compound. Further, it is preferred that the liquid photosensitive adhesive has a solvent content of 5 mass% or less or no solvent. Moreover, it is preferable that the viscosity of the green photosensitive adhesive at 25 C is 1 〇mpa.s~% from the viewpoint of the coating property of the liquid photosensitive adhesive or the adhesive layer, and the thinning and uniformity. (8) 〇mpa.s. Further, it is preferable that the photosensitive adhesive layer which has been B-staged by light irradiation has an adhesive strength at 25 ° C of 200 gf or less. Further, from the viewpoint of forming an adhesive layer having excellent film thickness uniformity, it is preferable to apply a liquid photosensitive adhesive by a spin coating method. Further, the present invention provides a semiconductor wafer laminate which is obtained by the method for producing a first semiconductor wafer laminate according to the present invention of η 13 201250873. The pores of the semiconductor wafer laminate obtained by the method of the present invention are sufficiently small, and the warpage after grinding can be sufficiently reduced. In addition, since the semiconductor wafer laminate is laminated with a semiconductor wafer, it is excellent in strength and can be easily transported, and it is possible to manufacture a semiconductor device having a structure in which a plurality of semiconductor elements are stacked. The present invention provides a method of manufacturing a third semiconductor device, comprising the steps of: coating two or more liquid photosensitive light-emitting light on a circuit surface of a semiconductor wafer having a circuit surface on which a metal bump is formed, This set is a B-staged adhesive layer, a 丄=layer of semiconductor crystal®, a B-staged carrier with more than 2 layers and the most (10) contains a Yang solder woven; _ wafer semiconductor wafer and Then the sound of the agent, what? A thousand body element is obtained with an adhesive layer: a semiconductor element knife, an adhesive layer of a semiconductor element, and i = between other semiconductor elements or with an adhesive layer

St件搭載用，之間並SC 根據本發明的第3半導 逆㈣接 感光性接著劑並藉由光照射广置的製造方法，使用液狀 藉此可獲得能充分減少叫化岐置接著劑層’ 加熱引起的不良狀況的附^的孔隙、並且不易產生由 此，可充分減小半導體㈣劑層的半導體晶圓。藉 得連接性優異的附有接著扃磨削後的翹曲，可容易地獲 性優異的半導體裝置。另㈢，半導體元件，可製造可靠 ，藉由設置具有2層以上的構 201250873 42601pif 劑層’且使最表面層中含有助焊劑成分，可提高 五屬接合性並且抑制助焊劑成分對接著劑層的影變。 於本發明的第3半導體裝置的製造方法中，車;佳為形 成上述最表Φ層的綠感光性歸齡有⑷放射線聚 =化合物、⑻光起始劑及（F)助焊劑成分，且⑷ 人^7合有於25 C為綠且分子叫有—個碳4雙鍵的化 合物。 藉由使用上述液狀感光性接著劑，可不使用溶劑而开》 ^塗，，可藉由對該塗膜進行光照射而形成含有助焊劑成 分的最表面層。而且，無需進行用以使溶舰燥的加熱， 故可充;7抑制由熱流動或揮發成分導致接著劑層產生針孔 的It况。另外’根據上述液狀感光性接著劑，可均勾地分 ^助焊劑成分且使最表面層形成得較薄，故可充分維持接 著劑層的特性並且進一步提高金屬接合性。 另外，較佳為經B階化的接著劑層包含最表面層及内 層，形成内層的液狀感光性接著劑含有（A)放射線聚合 性化合物、（B)缺始航（c)熱硬化性_，（A)成 分含有於25C為液狀且分子内具有一個碳_碳雙鍵的化合 物。 藉由使用上述液狀感光性接著劑，可不使用溶劑而塗 佈於半導體晶圓的電路面上，可藉由對該塗膜進行光照射 而形成薄膜的接著劑層。而且，無需進行用以使溶劑乾燥 的加熱，故可充分抑制由熱流動或揮發成分導致產生針孔 的情況。進而’可充分消除使用含有溶綱先前的樹脂糊 201250873According to the third embodiment of the present invention, the third semiconducting reversal (four) is connected to the photosensitive adhesive and is formed by a light irradiation, and the liquid can be used to sufficiently reduce the number of defects. The agent layer's pores which are inconvenient due to heating are not easily generated, and thus the semiconductor wafer of the semiconductor (four) layer can be sufficiently reduced. A semiconductor device excellent in connectivity can be easily obtained by the warpage after the subsequent honing. (3) The semiconductor element can be manufactured reliably, and by providing a layer of 201250873 42601pif agent having two or more layers and having a flux component in the outermost layer, the bonding of the five genera can be improved and the flux component can be suppressed to the adhesive layer. The change of the film. In the method for fabricating a third semiconductor device of the present invention, it is preferable that the green photosensitive age at which the outermost Φ layer is formed is (4) radiation poly=compound, (8) photoinitiator, and (F) flux component, and (4) The human compound 7 has a compound in which 25 C is green and the molecule is called a carbon 4 double bond. By using the above liquid photosensitive adhesive, it is possible to form the outermost layer containing the flux component by irradiating the coating film with light without using a solvent. Further, it is not necessary to perform heating for dissolving the ship, so that it can be charged; 7 suppresses the occurrence of pinholes in the adhesive layer caused by heat flow or volatile components. Further, according to the liquid photosensitive adhesive, the flux component can be uniformly divided and the outermost layer can be formed thin, so that the characteristics of the adhesive layer can be sufficiently maintained and the metal bondability can be further improved. Further, it is preferable that the B-staged adhesive layer includes the outermost layer and the inner layer, and the liquid photosensitive adhesive forming the inner layer contains (A) a radiation polymerizable compound, and (B) a starting (c) thermosetting property. _, (A) component contains a compound which is liquid at 25C and has one carbon-carbon double bond in the molecule. By using the above liquid photosensitive adhesive, it can be applied to the circuit surface of the semiconductor wafer without using a solvent, and the coating film can be formed by light irradiation of the coating film. Further, since heating for drying the solvent is not required, it is possible to sufficiently suppress the occurrence of pinholes due to heat flow or volatile components. Further, the use of the resin paste containing the former can be completely eliminated. 201250873

ΓΪίΐ問題°另外’上述液狀感光性接著劑由於經B階 後夢此夺她優異’故可對被黏附體進行良好的熱壓 接错此，可使將半導體元件彼此或铸體元件 兀件搭載用支撐構件接著的接著劑的層形成得更薄。 叫入佳為上述兩種以上的液狀感紐接著劑的溶 hU置為5質量％以下或不含溶劑。藉此，可進 孔隙的產生，並且充分降低接著劑層表面的黏著力。 mPa.s —另外’就提面液狀感光性接著劑的塗佈性或接著劑芦 的薄膜化、面内均勻性的觀點而言，較佳為上述兩種以丄 的液狀感絲接於25。⑽黏度為1G⑽的〜薦〇 進而’較佳為經B階化的接著劑層於25〇c的黏著強度 為200 gf以下。藉此，B階化後的操作性進一步提高。又 ▲料，，形成膜厚均勻性優異的接著劑層的觀點而 言’較佳為藉由餘絲塗佈上述_以上的 接著劑。 另外’本發明提供一種半導體裝置，其是藉由本發明 的第3半導體裝置的製造方法而獲得。 另外，本發明提供第2附有半導體元件的半導體晶圓 的製造方法’其包括以下步驟：於具有形成有金屬凸塊的 電路面之半導||晶®的電路面上’塗佈兩種以上的液狀感 光性接著劑及對塗膜進行光照射，藉此設置經B階化的接 著劑層，獲得附有接著劑層的半導體晶圓，經B階化的接 著劑層具有2層以上的構造且最表面層含有助焊劑成分； 201250873 42601pif 將附有接著劑層的半導體晶圓之半導體晶圓與接著劑層一 併切斷，切分成多個半導體元件，獲得附有接著劑層二半 導體元件；以及將附有接著劑層的半導體元件之接著劑層 夾在第2半導體晶圓與附有接著劑層的半導體元件之間】 進行壓接。 於本發明的第2附有半導體元件的半導體晶圓的製造 方法中，較佳為形成上述最表面層的液狀感光性接著劑含 有（A)放射線聚合性化合物、（B)光起始劑及助焊 劑成分，（A)成分含有於^它為液狀且分子内具有一個石户 奴雙鍵的化合物。 另外，較佳為上述經B階化的接著劑層包含最表面層 及内層，形成㈣的液狀感紐接著劑含有（A)放射^ 聚合性化合物、⑻光起始劑及⑹熱硬化性樹脂，⑷ ^含有於25°C為液狀且分相具有—個碳.碳雙鍵的化 =，較佳為上述兩種以上的液狀感紐接著劑的溶 劑含1為5質量％以下或不含溶劑。 *另外就&而液狀感光性接著劑的塗佈性或接著劑層 的薄膜化、面内均勻性的觀點而言，健為上述兩種以上 的液狀感光性接著劑於25ΐ的黏度為1G她的〜獅〇〇 mPa*s ° 進而，較佳為上述經B 強度為200 gf以下。 階化的接著劑層於25°C的黏著 另外，就形成膜厚均勻性優異的接著劑層的觀點而ΓΪίΐ problem ° In addition, the above liquid photosensitive adhesive has a good heat-pressure connection due to the B-stage dream, so that the semiconductor elements can be bonded to each other or the molded component can be made. The layer on which the adhesive agent is attached with the support member is formed to be thinner. It is preferable that the solubility hU of the above two or more liquid-like adhesives is set to 5% by mass or less or no solvent. Thereby, the generation of voids can be made and the adhesion of the surface of the adhesive layer can be sufficiently reduced. mPa.s - In addition, from the viewpoint of the coating property of the liquid-like photosensitive adhesive or the film formation and in-plane uniformity of the adhesive, it is preferred that the above two kinds of liquid-like filaments are connected At 25. (10) The viscosity is 1 G (10). Further, it is preferable that the B-staged adhesive layer has an adhesive strength of 200 gf or less at 25 〇c. Thereby, the operability after the B-stage is further improved. Further, from the viewpoint of forming an adhesive layer having excellent film thickness uniformity, it is preferable that the above-mentioned _ or more of the subsequent agent is applied by the excess yarn. Further, the present invention provides a semiconductor device obtained by the method of manufacturing a third semiconductor device of the present invention. Further, the present invention provides a second method of manufacturing a semiconductor wafer with a semiconductor element, which comprises the steps of: coating two types of circuit surfaces on a semiconductor surface having a circuit surface on which metal bumps are formed. The above liquid photosensitive adhesive and the coating film are irradiated with light to provide a B-staged adhesive layer to obtain a semiconductor wafer with an adhesive layer, and the B-staged adhesive layer has two layers. The above structure and the outermost layer contains a flux component; 201250873 42601pif The semiconductor wafer of the semiconductor wafer with the adhesive layer is cut together with the adhesive layer, and is divided into a plurality of semiconductor elements to obtain an adhesive layer And a second semiconductor element; and an adhesive layer of the semiconductor element with the adhesive layer is sandwiched between the second semiconductor wafer and the semiconductor element with the adhesive layer; In the method for producing a semiconductor wafer with a semiconductor element according to the second aspect of the invention, it is preferable that the liquid photosensitive adhesive forming the outermost layer contains (A) a radiation polymerizable compound and (B) a photoinitiator. And a flux component, the component (A) is a compound which is liquid and has a single bond of a rock in the molecule. Further, it is preferable that the B-staged adhesive layer contains the outermost layer and the inner layer, and the liquid-like adhesive agent forming the (four) contains (A) a radiation-polymerizable compound, (8) a photoinitiator, and (6) a thermosetting property. The resin (4) is contained in a liquid state at 25 ° C and has a carbon-carbon double bond in a phase-separated phase. Preferably, the solvent of the above two or more liquid-like binders contains 1 or less of 5% by mass or less. Or no solvent. * In addition, from the viewpoint of the applicability of the liquid photosensitive adhesive or the thin film formation and in-plane uniformity of the adhesive layer, the viscosity of the above two or more liquid photosensitive adhesives at 25 Å is improved. For 1G her ~ Griffin mPa*s ° Further, preferably the above B strength is 200 gf or less. The adhesive layer of the stepped layer is adhered at 25 ° C, and the adhesive layer having excellent film thickness uniformity is formed.

S 17 201250873^S 17 201250873^

Ajpijl 言l較佳為藉由旋塗法來塗佈上述兩種以上的液狀感 接著劑。 ^另外，本發明提供一種附有半導體元件的半導體晶 圓，其是藉由本發明的第2附有半導體元件的半導體晶 的製造方法而獲得。 另外，本發明提供第2附有接著劑層的半導體晶圓的 製造方法，其包括以下步驟：於具有形成有金屬凸塊的電 路面之半導體晶圓的電路面上，塗佈兩種以上的液狀感光 性接著劑及對塗膜進行光照射，藉此設置經B階化的接著 劑層，經B階化的接著劑層具有2層以上的構造且最表面 層含有助焊劑成分。 根據本發明的第2附有接著劑層的半導體晶圓的製造 方法，可獲得能充分減少凸塊部分的孔隙、而且充分減小 磨削後的翹曲的附有接著劑層的半導體晶圓。另外，根據 本發明的附有接著劑層的半導體晶圓的製造方法，可獲得 具有含有助焊劑成分的最表面層的附有接著劑層的半導麟 晶圓。根據此種附有接著劑層的半導體晶圓，可充分減小 半導體晶圓的磨削後的翹曲，可容易地獲得金屬接合性優 異的附有接著劑層的半導體元件，可製造可靠性優異的半 導體裝置。 於本發明的第2附有接著劑層的半導體晶圓的製造方 法中’較佳為形成上述最表面層的液狀感光性接著劑含有 (A)放射線聚合性化合物、（B)光起始劑及（C)助踩 劑成分，（A)成分含有於25°C為液狀且分子内具有—個破 201250873 4260 lpif -碳雙鍵的化合物。 另外較佳為上述經B階化的接著劑層包含最表面層 成内層的液狀感光性接著劑含有（A)放射、i ^化5物、⑻光起始劑及（C)熱硬化性樹脂，⑷ 成刀s有於25C為液狀且分子内具有—個碳碳雙鍵的化 切人’較佳為上述兩種以上的液狀感光性接著劑的溶 劑3 1為5質量％以下或不含溶劑。 “另外’就提高液狀感光性接著_塗佈性或接著劑層 的薄膜化、面内均勻性的觀點而言，較佳為上述兩種以上 的液狀感紐接著劑於坑的減為1G mPa.s〜3〇〇〇〇 mPa*s ° 進而，較佳為上述經B階化的接著 強度為200 gf以下。 者 *另外，就形成膜厚均勻性優異的接著劑層的觀點而 ^較佳為藉由魅絲塗佈上述_以上的液狀感光性 接著劑。 ^外，本發明提供一種附有接著劑層的半導體晶圓， 其是藉由本發明的第2附有接著劑層的半導體晶圓的製造 方法而獲得。 另外，本發明提供第4半導體裝置的製造方法，該製 k方法包括以下步驟·於具有形成有金屬凸塊的電路面之 第丄半導體晶®的電路面上，塗佈_以上的液狀感光性 接著劑及躲麟行絲射，藉此設驗B階彳_接著劑 201250873 'tAUWipif f，獲得附有接著劑層的半導體晶圓，經B階化的接著劑 2層以上的構造且最表面層含有助焊劑成分；將附 著d層的半導體晶圓之接著劑層纽附有接著劑層的 =導體晶圓與第2半導體晶圓之間並進行壓接，獲得半導 ，晶圓積層體；以及將半導體晶圓積層體切斷，獲得積層 有半導體元件的半導體元件積層體。 、再者，最近除了半導體元件的小型薄型化、高性能化 二外、’推進多功能化，積層有多個半導體元件的半導體裝 心遽增加。另外，半導體襞置的厚度向薄型化的方向發 於製造此種半導體裝置時，制是孔隙或晶圓紐曲的 p】對於裝置的薄型化或可靠性提高而言重要。 根據本發明的第4半導體裝置的製造方法，於由附有 ，劑層的半導體晶圓製造半導體裝置的情形時，可充分 實；凸塊部分的孔隙，並且可充分減小磨削後的翹曲，可 現具備積層有多個半導體元件的構造之半導體裝置的薄 型化。 、於本發明的第4半導體裝置的製造方法中，較佳為形 成最表面層的液狀感光性接著劑含有（A)放射線聚合性 化合物、（B)光起始劑及（F)助焊劑成分，（A)成分含 有於25¾為液狀且分子内具有一個碳_碳雙鍵的化合物。 另外’較佳為上述經B階化的接著劑層包含最表面層 ^内層，形成内層的液狀感光性接著劑含有（A)放射線 &合性化合物、（B)光起始劑及（C)熱硬化性樹脂，（A) 成分含有於25°C為液狀且分子内具有一個碳-碳雙鍵的化Ajpijl is preferably a coating of the above two or more liquid sensitizing agents by a spin coating method. Further, the present invention provides a semiconductor wafer to which a semiconductor element is attached, which is obtained by the method for producing a semiconductor crystal with a semiconductor element according to the second aspect of the present invention. Further, the present invention provides a second method of manufacturing a semiconductor wafer with an adhesive layer, comprising the steps of: coating two or more types on a circuit surface of a semiconductor wafer having a circuit surface on which metal bumps are formed; The liquid photosensitive adhesive and the coating film are irradiated with light to provide a B-staged adhesive layer, and the B-staged adhesive layer has a structure of two or more layers, and the outermost layer contains a flux component. According to the second method of manufacturing a semiconductor wafer with an adhesive layer of the present invention, it is possible to obtain a semiconductor wafer with an adhesive layer capable of sufficiently reducing voids in the bump portion and sufficiently reducing warpage after grinding. . Further, according to the method for producing a semiconductor wafer with an adhesive layer of the present invention, a semiconductor wafer with an adhesive layer having an outermost layer containing a flux component can be obtained. According to such a semiconductor wafer with an adhesive layer, warpage after grinding of the semiconductor wafer can be sufficiently reduced, and an adhesive layer-attached semiconductor element excellent in metal bondability can be easily obtained, and reliability can be manufactured. Excellent semiconductor device. In the second method for producing a semiconductor wafer with an adhesive layer according to the present invention, it is preferable that the liquid photosensitive adhesive forming the outermost layer contains (A) a radiation polymerizable compound, and (B) a light start. And (C) a tanning agent component, wherein the component (A) contains a compound which is liquid at 25 ° C and has a broken 201250873 4260 lpif-carbon double bond in the molecule. Further, it is preferable that the B-staged adhesive layer contains a liquid-based photosensitive adhesive having an outermost layer and an inner layer containing (A) radiation, i^5, (8) photoinitiator, and (C) thermosetting property. Resin, (4) The singer s has a liquid-like shape at 25C and has a carbon-carbon double bond in the molecule. It is preferable that the solvent 31 of the above-mentioned two or more liquid photosensitive adhesives is 5% by mass or less. Or no solvent. "In addition, from the viewpoint of improving the liquid photosensitive property, the coating property, the film formation of the adhesive layer, and the in-plane uniformity, it is preferred that the above two or more liquid sensory binders are reduced to pits. 1G mPa.s to 3〇〇〇〇mPa*s ° Further, it is preferable that the B-staged bonding strength is 200 gf or less. In addition, a viewpoint of forming an adhesive layer having excellent film thickness uniformity is obtained. Preferably, the liquid photosensitive adhesive is applied by the above-mentioned glare. In addition, the present invention provides a semiconductor wafer with an adhesive layer, which is provided with the second adhesive of the present invention. Further, the present invention provides a method of manufacturing a fourth semiconductor device, which comprises the following steps: a circuit of a second semiconductor crystal having a circuit surface on which metal bumps are formed. On the surface, a liquid photosensitive adhesive of _ or more is applied, and a ray-free silk ray is applied, thereby setting a B-stage 彳_adhesive 201250873 'tAUWipif f, obtaining a semiconductor wafer with an adhesive layer, and passing through the B-stage The adhesive has more than 2 layers of structure and the outermost layer contains a component of the semiconductor wafer to which the d layer is attached, and a bond between the conductor wafer and the second semiconductor wafer with the adhesive layer, to obtain a semiconducting, wafer laminate; The semiconductor wafer laminate is cut to obtain a semiconductor device laminate in which a semiconductor element is laminated. Further, recently, in addition to the miniaturization and high performance of the semiconductor element, the multi-layer is promoted, and a plurality of semiconductor elements are laminated. In addition, the thickness of the semiconductor device is increased in the direction of thinning in the manufacture of such a semiconductor device, and the aperture is formed by the aperture or the wafer, and the thickness of the device or the reliability is improved. According to the fourth semiconductor device manufacturing method of the present invention, in the case of manufacturing a semiconductor device from a semiconductor wafer to which a layer is attached, the aperture of the bump portion can be sufficiently obtained, and the grinding can be sufficiently reduced. The warpage of the semiconductor device having a structure in which a plurality of semiconductor elements are laminated can be reduced. In the method of manufacturing the fourth semiconductor device of the present invention, it is preferable. The liquid photosensitive adhesive for forming the outermost layer contains (A) a radiation polymerizable compound, (B) a photoinitiator, and (F) a flux component, and the component (A) is contained in a liquid state of 253⁄4 and has a molecule. A compound having a carbon-carbon double bond. Further, it is preferable that the B-staged adhesive layer contains the outermost layer and the inner layer, and the liquid photosensitive adhesive forming the inner layer contains (A) a radiation & (B) a photoinitiator and (C) a thermosetting resin, wherein the component (A) is liquid at 25 ° C and has a carbon-carbon double bond in the molecule.

S 20 201250873 42601pif 合物。 進而，較佳為上述兩種以上的液狀感光性接著劑的溶 劑含量為5質量％以下或不含溶劑。 另外，就提高液狀感光性接著劑的塗佈性或接著劑層 的薄膜化 '面内均勻性的觀點而言，較佳為上述兩種以^ 的液狀感光性接著劑於25°C的黏度為1〇 mPa.s ° 進而，較佳為上述經B階化的接著劑層於莫 強度為200 gf以下。 ^ 另外，就形成膜厚均勻性優異的接著劑層的觀點而 言，較佳為藉由旋塗法來塗佈上述兩種以上的液狀感光性 接著劑。 另外，本發明提供一種半導體裝置，其是藉由本發明 的第4半導體裝置的製造方法而獲得。 另外，本發明提供第2半導體晶圓積層體的製造方 法，其包括以下步驟：於具有形成有金屬凸塊的電路面的 第1半導體晶圓的電路面上，塗佈兩種以上的液狀感光性 接著劑及對塗膜進行光照射，藉此設置經B階化的接著劑 層，獲得附有接著劑層的半導體晶圓，經B階化的接著劑 • 層具有2層以上的構造且最表面層含有助焊劑成分；以及 將附有接著劑層的半導體晶圓之接著劑層夾在附有接著劑 層的半導體晶圓與第2半導體晶圓之間並進行壓接，獲得 半導體晶圓積層體。 於本發明的第2半導體晶圓積層體的製造方法中，較 21 201250873 ^ζ,υυιριί 佳為形成最表面層的液狀感光性接著劑含有（Α)放射線 聚合性化合物、（B)光起始劑及（F)助焊劑成分，（A) 成分含有於25°C為液狀且分子内具有一個碳-碳雙鍵的化 合物。 另外，較佳為上述經B階化的接著劑層包含最表面層 及内層，形成内層的液狀感光性接著劑含有（A)放射線 聚合性化合物、（B)光起始劑及（C)熱硬化性樹脂，（a) 成分含有於25 C為液狀且分子内具有一個碳-碳雙鍵的化 合物。 進而，較佳為上述兩種以上的液狀感光性接著劑的溶 劑含量為5質量％以下或不含溶劑。 另外，就提高液狀感光性接著劑的塗佈性或接著劑芦 的薄膜化、面内均勻性的觀點而言，較佳為上述兩種以丄 的液狀感光性接著劑於25Ϊ的黏度為10 mPa,s〜3〇 mPa*s ° 進而，較佳為上述經㈣化的接著_於25 強度為200 gf以下。 +占者 一，外，就形成膜厚均句性優異的接著劑層 接著劑。疋佈上相種社驗狀感光性 種半導體晶圓積層體，其是藉由 積層體的製造方法而獲得。 另外’本發明提供一 本發明的第2半導體晶圓 [發明的效果] 根據本發明 無需進行形成接著劑層時的加熱，藉由S 20 201250873 42601pif compound. Furthermore, it is preferred that the liquid photosensitive adhesive of the above two or more types have a solvent content of 5% by mass or less or no solvent. Moreover, from the viewpoint of improving the coatability of the liquid photosensitive adhesive or the in-plane uniformity of the film formation of the adhesive layer, it is preferred that the above two liquid photosensitive adhesives are at 25 ° C. The viscosity is 1 〇 mPa.s ° Further, it is preferred that the B-staged adhesive layer has a Mo strength of 200 gf or less. Further, in view of forming an adhesive layer having excellent film thickness uniformity, it is preferred to apply the above two or more liquid photosensitive subsequent agents by a spin coating method. Further, the present invention provides a semiconductor device obtained by the method of manufacturing a fourth semiconductor device of the present invention. Further, the present invention provides a method of manufacturing a second semiconductor wafer laminate, comprising the steps of applying two or more liquid forms on a circuit surface of a first semiconductor wafer having a circuit surface on which metal bumps are formed. The photosensitive adhesive and the coating film are irradiated with light to provide a B-staged adhesive layer to obtain a semiconductor wafer with an adhesive layer, and the B-staged adhesive layer has two or more layers. And the outermost layer contains a flux component; and an adhesive layer of the semiconductor wafer with the adhesive layer is sandwiched between the semiconductor wafer with the adhesive layer and the second semiconductor wafer, and is crimped to obtain a semiconductor Wafer laminate. In the method for producing a second semiconductor wafer laminate according to the present invention, it is preferable that the liquid photosensitive adhesive which forms the outermost layer contains a (radio) polymerizable compound and (B) light from 21 201250873. The starting agent and (F) the flux component, and the component (A) contains a compound which is liquid at 25 ° C and has a carbon-carbon double bond in the molecule. Further, it is preferable that the B-staged adhesive layer includes an outermost layer and an inner layer, and the liquid photosensitive adhesive forming the inner layer contains (A) a radiation polymerizable compound, (B) a photoinitiator, and (C) The thermosetting resin, (a) contains a compound in which 25 C is liquid and has one carbon-carbon double bond in the molecule. Furthermore, it is preferred that the liquid photosensitive adhesive of the above two or more types have a solvent content of 5% by mass or less or no solvent. In addition, from the viewpoint of improving the coatability of the liquid photosensitive adhesive or the film formation and in-plane uniformity of the adhesive, it is preferred that the liquid photosensitive adhesive of the above two kinds is at a viscosity of 25 Å. It is 10 mPa, s~3 〇 mPa*s ° Further, it is preferable that the above-mentioned (four) _25 intensity is 200 gf or less. + Occupation One, in addition, an adhesive layer excellent in film thickness uniformity is formed. On the crepe, a photosensitive semiconductor wafer laminate is obtained by a method for producing a laminate. Further, the present invention provides a second semiconductor wafer of the present invention. [Effects of the Invention] According to the present invention, it is not necessary to perform heating when forming an adhesive layer,

S 22 201250873 42601pif 曝光便可獲得附有接著_料物晶l因此，可實現 =，内的B階化，可大幅度地減少製造半導體裝置時的 time)。另外，可抑制讀化後的半導體晶 ==故可使半導體晶圓薄膜化，可獲得更高功能的 =導ff置。另外’根據本發明’可不使用溶劑、另外不 =力:熱而：短時間内形成薄膜的接著劑層，故可成為可 ，>熱能I及揮發性有機化合物（她此〇啊^ C=P〇Unds，V0C)的對環境的負荷較先前小 【實施方式】 以下，視需要一面參照圖式，一面對用以實施本發明 =態力詳細說明。然而，本發明不限定於以下的實施 幵广 圖式中’對相同要素標註相同符號，省略重 3二岡二ί上下左右等位置關係只要無特別說明，則 視為基於^式所示的位置_，但 圖示的比率。 卞卜 法二二=圖式’對本發明的半導體裝置及其製造方 口 ^ 。近年來提出了各種構造的半導體裝置， 本ίΐ月的it方法不限定於以下說明的構造的半導體裝置 及其製造方法。 圖1〜為表示第1半導體裝置的製造方法的-實 施形態的。本實施形態的製造方法包括以下步驟。 步鄉1 ^接著劑層形成步驟）：於形成有金屬凸塊12 的半導體晶0 1G的電路面si上塗佈液狀感光性接著劑$ (參照圖1及圖2 )。 23 201250873 •+^.UL/Ipif 歹邵少娜厂自包含所塗佈的液狀感光性接S 22 201250873 42601pif exposure can be obtained with the addition of the material crystal l. Therefore, the B-stage can be realized in =, and the time for manufacturing the semiconductor device can be greatly reduced. In addition, it is possible to suppress the semiconductor crystal after the reading ==, so that the semiconductor wafer can be thinned, and a higher function can be obtained. Further, 'according to the present invention', it is possible to use a solvent without the use of a solvent, and not to be a heat: a layer of an adhesive which forms a film in a short period of time, and it is possible, > thermal energy I and volatile organic compounds (here, ^^ C= The load on the environment of P〇Unds, V0C) is smaller than before. [Embodiment] Hereinafter, a detailed description will be made with reference to the drawings as needed to implement the present invention. However, the present invention is not limited to the following embodiments, and the same elements are denoted by the same reference numerals, and the positional relationship such as the weight of the upper and lower sides is omitted, and unless otherwise specified, the position indicated by the formula is regarded as _ , but the ratio shown.卞 二 二 二 二 = 图 图 图 图 图 图 图 图 图 图 图 图In recent years, semiconductor devices of various structures have been proposed, and the method of the present invention is not limited to the semiconductor device having the structure described below and a method of manufacturing the same. Fig. 1 is a view showing an embodiment of a method of manufacturing a first semiconductor device. The manufacturing method of this embodiment includes the following steps. Step 4: Adhesive layer forming step): A liquid photosensitive adhesive $ is applied onto the circuit surface si of the semiconductor crystal 0 1G on which the metal bumps 12 are formed (see FIGS. 1 and 2 ). 23 201250873 •+^.UL/Ipif 歹 Shao Shao Na factory self-contained coating liquid photosensitive connection

著劑的感光性接著劑層側進行曝光，使感光性接著劑層B 階化。藉此獲得附有接著劑層的半導體晶圓50 (參照圖3 及圖4 )。 . 步驟3 (背面研磨膠帶積層步驟）：於接著劑層6 層可剝離的膠帶（背面研磨膠帶）3〇 (參照圖5)。貝 步驟4 (背面研磨步驟）：自與電路面s 面(背面”2對半導體晶圓1〇進行研磨，使g = 變薄（參照圖6)。 導體日曰圓 步驟5 (切割膠帶積層步驟）：於半 電路面S1為相反側的面（背 二曰® 1(>的與 割膠帶）36。 ）上積層了剝_的膠帶（切 圖7)步驟6(_驟）：_離的膠帶3。_(參照 獲得，著劑層的=:):(參照圖8)。藉此 體元二8壓(ί 將所_附有接著劑層的半導 體元件搭_切構^ ^體裝置用的切構件（半導 步驟9 (壓;^ t 積層，封’獲:半導)體;=材(未圖示)將所得的 r:，對各步驟加以詳述。 (接著劑層形成步驟）The photosensitive adhesive layer side of the coating is exposed to form a photosensitive adhesive layer B. Thereby, the semiconductor wafer 50 with the adhesive layer is obtained (refer to FIGS. 3 and 4). Step 3 (Step of laminating the backing tape): 6 layers of peelable tape (back grinding tape) on the adhesive layer 3 (refer to Fig. 5). Shell Step 4 (Back Grinding Step): Grinding the semiconductor wafer 1〇 from the s surface (back side) of the circuit surface to make g = thin (refer to Figure 6). Conductor rounding step 5 (cutting tape lamination step) ): On the opposite side of the half-circuit surface S1 (back 曰® 1 (> and dicing tape) 36), the tape is peeled off (cut Fig. 7). Step 6 (_): _ Tape 3. _ (refer to the obtained, the layer of the agent =:): (refer to Figure 8). By means of the voxel 2 8 pressure ( ί _ _ _ _ _ _ _ _ _ _ _ _ The cutting member for the device (semi-conductive step 9 (pressure; ^ t buildup, seal 'obtained: semi-conductive) body; = material (not shown) will be the obtained r:, each step will be described in detail. Forming step)

S 24 201250873 4260lpif 於具有形成有金屬凸塊12的電路面之半導體晶圓1〇 的電路面S1上塗佈液狀感光性接著劑5。塗佈可：在箱 2〇内將貼附有膠帶4的半導體晶圓1〇固定於夾具21的狀 態下進行。塗佈方法是選自印刷法、旋塗法、噴霧塗佈法、 噴射分配法及噴墨料+。該些方料，就薄膜化及膜厚 均勻性的觀點而言，較佳為旋塗法（圖2中的（〇或喷 霧塗佈法（圖2中的（b))。可於旋塗裝置所具有的吸附台 中形成有孔，亦可使吸附台為網狀。就不㈣留吸附痕的 方面而言，較佳為吸附台為網狀。為了防止晶圓的不平整 及邊緣部的隆起，利用旋塗法的塗佈較佳為以5〇〇 rpm〜 5000 rpm的轉速進行。就同樣的觀點而言，轉速更佳為 1000 rpm〜4000 rpm。亦可於旋塗台上具備溫度調節器以 調整液狀感光性接著劑的黏度。 本發明中的金屬凸塊的種類並無特別限定，可列舉包 含銅、銀、金等者。於本實施形態中，亦可於金屬凸塊12 上更設置焊錫球14。焊錫球14可列舉包含含有錯的焊锡 或無錯焊錫等先前公知的焊錫材料者。作為金屬凸塊，就 製作的容易性或成本的觀點而言，較佳為於金屬凸塊的情 況下不易製作氧化膜的金、成本低廉的銅。 半導體晶圓可使用附有凸塊的晶圓，該附有凸塊的晶 圓具有由銅凸塊及焊錫球形成的突起電極。突起電極的高 度（銅凸塊+焊錫球）可列舉2〇 μιη〜6〇 左右。另外， 晶圓的厚度是根據晶圓尺寸而不同，若為6吋至12吋的範 圍的晶圓，則可使用磨削前的晶圓厚度為625 μιη〜775 μιη 25S 24 201250873 4260lpif A liquid photosensitive adhesive 5 is applied onto the circuit surface S1 of the semiconductor wafer 1A having the circuit surface on which the metal bumps 12 are formed. The coating can be carried out by fixing the semiconductor wafer 1 to which the tape 4 is attached in the case 2 to the jig 21. The coating method is selected from the group consisting of a printing method, a spin coating method, a spray coating method, a spray dispensing method, and an ink jet material +. These materials are preferably a spin coating method ((〇 or spray coating method ((b) in Fig. 2) in Fig. 2 from the viewpoint of film formation and film thickness uniformity. The adsorption device has a hole formed in the adsorption stage, and the adsorption stage can be made into a mesh shape. In terms of not (4) leaving the adsorption mark, the adsorption stage is preferably a mesh shape. In order to prevent wafer unevenness and edges. The bulging of the portion is preferably carried out by spin coating at a speed of 5 rpm to 5000 rpm. From the same viewpoint, the rotation speed is preferably 1000 rpm to 4000 rpm. The temperature regulator is provided to adjust the viscosity of the liquid photosensitive adhesive. The type of the metal bump in the present invention is not particularly limited, and examples thereof include copper, silver, gold, etc. In the present embodiment, the metal may be used. A solder ball 14 is further provided on the bump 12. The solder ball 14 includes a conventionally known solder material including a solder or a solder which is erroneous solder. As a metal bump, it is easier to manufacture or cost. Good for the case of metal bumps, it is not easy to make gold oxide film, low cost The semiconductor wafer may use a bump-attached wafer having bump electrodes formed of copper bumps and solder balls. The height of the bump electrodes (copper bumps + solder balls) may be The thickness of the wafer is different depending on the size of the wafer. For wafers ranging from 6吋 to 12吋, the thickness of the wafer before grinding can be 625 μm~ 775 μιη 25

201250873f TA-V/Wf X 者。 關於接著劑層的厚度，就壓接時的連接性及樹脂填充 性的觀點而言，於僅金屬凸塊的情形時，較佳為凸塊高度 χΐ與接著劑層的厚度y的關係滿足xlgy，更佳為滿足 0.85x1 Syg 1.2x1。於在金屬凸塊上具有焊錫球的情形 時，較佳為金屬凸塊高度X2、焊錫凸塊χ3及接著劑層的 厚度y的關係滿足χ2 $ y、χ2+χ3 $ y。 液狀感光性接著劑可於注射器等中保存，亦可於旋塗 裝置的注射器設置部分具備溫度調節器。 於藉由例如旋塗法將液狀感光性接著劑塗佈於半導體 晶圓上時，有時多餘的液狀感光性接著劑附著於半導體晶 圓的邊緣部分。可於旋塗後利用溶劑等對此種多餘的接^ 劑進行清洗而加以去除。藉由進行去除，可抑制裝置的污 染。清洗方法並無特別限定，較佳為一面使半導體晶圓旋 轉，一面使溶劑自喷嘴喷出至多餘的接著劑附著的部分。 清洗時所使用的溶劑只要使接著劑溶解即可，例如可使用 選自甲基乙基酮、丙酮、異丙醇及曱醇中的低沸點溶劑。 另外，作為將半導體晶圓的邊緣部分的多餘的接著劑 去除的方法，可於預先在邊緣部上貼附有遮蔽膠帶 (masking tape)的半導體晶圓上旋塗接著劑後，將遮蔽膠 帶剝離，藉此將接著劑層形成於目標區域中" (B階化步驟） 自藉由塗佈而由液狀感光性接著劑形成的感光性接著 劑層5側利用曝光裝置9照射活性光線（典型而言為紫外201250873f TA-V/Wf X. Regarding the thickness of the adhesive layer, from the viewpoint of the connectivity at the time of pressure bonding and the resin filling property, in the case of only the metal bump, it is preferable that the relationship between the bump height χΐ and the thickness y of the adhesive layer satisfies xlgy. More preferably to meet 0.85x1 Syg 1.2x1. In the case where the solder bump is provided on the metal bump, it is preferable that the relationship between the metal bump height X2, the solder bump χ3, and the thickness y of the adhesive layer satisfies χ2 $ y, χ 2+ χ 3 $ y. The liquid photosensitive adhesive can be stored in a syringe or the like, or a temperature adjuster can be provided in the syringe setting portion of the spin coating apparatus. When a liquid photosensitive adhesive is applied onto a semiconductor wafer by, for example, a spin coating method, an excessive liquid photosensitive adhesive may adhere to the edge portion of the semiconductor wafer. This excess agent can be removed by washing with a solvent or the like after spin coating. By performing the removal, the contamination of the device can be suppressed. The cleaning method is not particularly limited, and it is preferred to eject the solvent from the nozzle to the portion where the excess adhesive adheres while rotating the semiconductor wafer. The solvent to be used for the washing may be a solvent having a low boiling point selected from the group consisting of methyl ethyl ketone, acetone, isopropyl alcohol and decyl alcohol, as long as the binder is dissolved. Further, as a method of removing excess adhesive at the edge portion of the semiconductor wafer, the masking tape can be peeled off by spin-coating the adhesive on a semiconductor wafer to which a masking tape is attached to the edge portion in advance. Thereby, the adhesive layer is formed in the target region " (B-stage step) The active light is irradiated by the exposure device 9 from the side of the photosensitive adhesive layer 5 formed of the liquid photosensitive adhesive by coating ( Typically UV

S 26 201250873 ^zouipif 線），使感光性接著劑層B階化。藉此可將經B階化的接 著劑層6固定於半導體晶圓1〇上，並且降低接著劑層6 表面的黏性。如此而獲得的附有接著劑層的半導體晶圓5〇 的操作性優異，並且可充分減少凸塊部分的孔隙，而且可 充分減小磨削後的龜曲。 曝光可於真空下、氮氣下、空氣下等環境下進行。為 了減少氧阻礙，亦可於將經離形處理的聚對苯二$酸乙二 酯（Polyethylene terephthalate，PET)膜或聚丙烯膜等基 材積層於感光性接著劑層上的狀態下進行曝光。另外，亦 可於將聚氯乙烯、聚烯烴、乙烯-乙酸乙烯酯共聚物、聚胺 酯或膠帶（背面研磨膠帶）積層於感光性接著劑層上的狀 態下進行曝光。藉此，可於該步驟後進行對半導體晶圓進 行背面研磨的步驟時，直接進入背面研磨步驟。就黏性降 低及節拍時間的觀點而言，曝光量較佳為2〇 mJ/cm2〜2〇〇〇 mJ/cm。另外，為了降低b階化後的黏性及減少逸氣，亦 可於曝光後於100°C以下的溫度進行加熱。 另外，亦可介隔經圖案化的遮罩來進行曝光。藉由使 用經圖案化的遮罩，可形成熱壓接時的流動性不同的接著 劑層。藉由形成如上所述的流動性不同的接著劑層，例如 以下情況成為可能。藉由在遮蔽金屬凸塊部分的狀態下進 行曝光，可形成金屬凸塊部分的熱壓接流動性更優異的接 著劑層。藉此，可減少熱壓接時的孔隙，或高效地賦予氧 化膜去除性（助焊劑性）。 (背面研磨步驟） 5 27 201250873, 可於B階化步驟後藉由對半導㈣a 使其薄型化。即，亦可自半導體 的面（背面）進行研磨而將半導體晶圓 ^相貝1 於接著劑層6上積層可_轉帶_㈣情形時， 兮狀册川目女甘U f V月面研磨膠帶等）30。 雜罗30具有基材31及黏著層％。 用聚氯乙婦、輯煙、乙稀·乙酸乙 ^雜帶而使 ，軟基材。作為積層刊離_帶的方法，例如 璺已預先成形為膜狀的膜的方法來進行。 ㈢曰 =後’對半導體晶圓10的與電路面si為相反側的 面（月面）進行研磨’將半導體晶圓1〇磨薄至預定厚产為 止。研磨難為於藉由料3G將铸體晶圓1()固定二研 磨用的夾具的狀態下，使用研磨裝置34來進行。另外，於 該步驟中，較佳為使半導體晶圓10薄至厚度ίο μιη〜150 μΐη為止。若經薄化的半導體晶圓10的厚度小於10 μιη， 則容易產生半導體晶圓的破損，另一方面，若超過15〇 μπι ’則難以應對半導體裝置的小型化的要求。 (切割步驟） 於半導體晶圓10的與電路面S1為相反側的面（背面） 上積層可剝離的膠帶（切割膠帶）36。可剝離的膠帶36 可藉由層疊已預先成形為膜狀的膠帶的方法而貼附。 繼而’將可剝離的膠帶（背面研磨膠帶）30剝離。例 如可使用藉由照射活性光線（典型而言為紫外線）而黏著 性下降的膠帶，自膠帶30侧進行曝光後，將其剝離。 沿著切割線將半導體晶圓10與接著劑層6—併切斷。S 26 201250873 ^zouipif line), the photosensitive adhesive layer is B-staged. Thereby, the B-staged adhesive layer 6 can be fixed on the semiconductor wafer 1 and the viscosity of the surface of the adhesive layer 6 can be lowered. The semiconductor wafer 5〇 with the adhesive layer obtained in this manner is excellent in handleability, and the pores of the bump portion can be sufficiently reduced, and the tortuosity after grinding can be sufficiently reduced. The exposure can be carried out under vacuum, under nitrogen, under air, and the like. In order to reduce the oxygen barrier, the substrate may be exposed to a layer of a polyethylene terephthalate (PET) film or a polypropylene film which has been subjected to a release treatment on a photosensitive adhesive layer. . Further, exposure may be carried out by laminating polyvinyl chloride, polyolefin, ethylene-vinyl acetate copolymer, polyurethane or tape (back grinding tape) on the photosensitive adhesive layer. Thereby, when the step of back-graining the semiconductor wafer is performed after this step, the back grinding step is directly entered. The exposure amount is preferably from 2 〇 mJ/cm 2 to 2 〇〇〇 mJ/cm from the viewpoint of viscosity reduction and tact time. Further, in order to reduce the viscosity after the b-stage and reduce the outgassing, it is also possible to heat at a temperature of 100 ° C or lower after the exposure. Alternatively, the exposure can be performed via a patterned mask. By using the patterned mask, an adhesive layer having different fluidity at the time of thermocompression bonding can be formed. By forming the adhesive layer having different fluidity as described above, for example, the following cases are possible. By exposing in a state where the metal bump portion is shielded, an adhesive layer having a more excellent thermocompression fluidity of the metal bump portion can be formed. Thereby, the pores at the time of thermocompression bonding can be reduced, or the oxide film removal property (flux property) can be efficiently imparted. (Back grinding step) 5 27 201250873, which can be thinned by the semi-conductive (four) a after the B-stage step. That is, it is also possible to polish from the surface (back surface) of the semiconductor to laminate the semiconductor wafer 1 on the adhesive layer 6 in the case of the _transfer _ (four) case, the shape of the scorpion Grinding tape, etc.) 30. The misc 30 has a base material 31 and an adhesive layer %. It is made of polyvinyl chloride, tobacco, ethylene and acetic acid, and soft substrate. The method of laminating the tape is carried out, for example, by a method in which a film has been previously formed into a film. (3) 曰 = </ RTI> After polishing the surface (moon surface) of the semiconductor wafer 10 opposite to the circuit surface si, the semiconductor wafer 1 is honed to a predetermined thickness. The polishing is difficult to be performed by using the polishing device 34 in a state in which the casting wafer 1 () is fixed to the jig for grinding by the material 3G. Further, in this step, it is preferable to make the semiconductor wafer 10 thin to a thickness of ίο μηη to 150 μΐη. When the thickness of the thinned semiconductor wafer 10 is less than 10 μm, the semiconductor wafer is likely to be damaged. On the other hand, if it exceeds 15 μm, it is difficult to cope with the miniaturization of the semiconductor device. (Cutting Step) A peelable tape (cut tape) 36 is laminated on a surface (back surface) of the semiconductor wafer 10 opposite to the circuit surface S1. The peelable tape 36 can be attached by laminating a tape which has been previously formed into a film shape. Then, the peelable tape (back grinding tape) 30 was peeled off. For example, an adhesive tape having a reduced adhesiveness by irradiation with active light (typically ultraviolet light) can be used, and after exposure from the tape 30 side, it is peeled off. The semiconductor wafer 10 and the adhesive layer 6 are cut along the dicing line.

S 28 201250873 42601pif 藉由該切割，而將半導體晶圓_分成於各自 讯 有接著劑層6a的多個半導體晶片（半導體元件 割較佳為於藉由膠帶（切割膠帶加將整 圓環）的狀態下使用切割刀來進行。如此曰 劑層的半導體晶片4G。 又侍附有接耆 (壓接步驟） =後’藉由接合裝置將所切分的半導體晶片咖盘 接者劑層6a -併拾取，即拾取财接勒層的、 4〇。繼而，將附有接著劑層的半導體元件4〇壓接（安 於具有金屬凸塊或電極墊16的半導體裝置用的支撐構;牛 (2 =元件搭載用支撐構件）15。如此，將附有接著劑 1半導體晶片之接著劑層夾在附有接著劑層的半導體晶 二支撐構件之間並進行壓接，藉此可實現半導體盘 支撐構件的接著及導通。 〃 關於麗接的條件，只要可實現金屬電極的接合、藉由 ^锡球的炼融進行的接合，就沒有問題，例如只要為溫度 二150 C〜400 C、壓力為〇.1 MPa〜2.〇 MPa、時間為1秒 〜30秒左右的範圍，則可實現上述接合。 (密封步驟） 藉由讀材將含有半導體晶片1〇a的積層體密封 止匕獲得半導體裝置100。 經由如上所述的步驟’可製造具有將半導體元件與半 體兀件搭細支撐構件接著的構造的半導體裝置。半導 體裝置的構成及製造方法不限定於以上的實施形態，只要 2 29 201250873, HZOUipif 不偏離本發明的主旨則可適宜變更。 例如可視需要而更換步驟1〜步驟7的順序。更且 體而言，亦可於預先經切割的半導體晶圓的電路面上塗; 液狀感光性接著劑，其後照射雜规（典㈣言為紫 線）而使接著劑B 化。此時’亦可使用經圖案化的遮罩。 亦可於接著劑層形成步驟中，將液狀感光性接著 佈於半導體晶_電路面上後，藉由對半導體晶圓進行加 熱而使液狀感光性接著劑的黏度變低，或施加超音波， 於真空腔室内減壓，藉此減少凸塊周邊的孔隙。 2 另外，亦可於將液狀感光性接著劑塗佈於半導體3 的電路面上並進行曝光後’進-步塗佈液狀感光性接著 並進行曝光，藉此獲得賴的接著觸。此時，亦可藉二 塗佈不隨成㈣紐接著舰進行曝光，而獲^且 有不同物性的接著劑層。 &quot; 對於接著劑層，亦可於B階化及熱壓接後，於刚 〜150°C實施5分鐘〜12G分鐘的熱硬化處理。藉由此種執 硬化處理，可抑制17G°C以上的高溫熱歷程步驟導致的^ 隙或剝離，可獲得南可靠性的半導體穿置。 另外，可代替上述壓接步驟中的半導體元件搭載 樓構件，而於半導體晶圓、其鲜導體元件祕載有 體7L件的基板等上壓接附有接著劑層的半導體晶片4〇。 圖10中的⑴為表示附有半導體元件的半導體 7〇的-例的圖，該附有半導體元件的半導體晶圓7〇是於 形成有金屬凸塊的半導體晶圓54的電路面上，壓接有附有 201250873 42601pif 接著劑層的半導體晶片40。圖1〇中的 (a)十所示的b-b線的剖面圖。 (b)為圖10中的 上述附有半導體 製造用構件而供給。 凡件的半導體晶11可作為半導體裝置 導體體晶他半 實施形態中，如圖U中的方法的:例的圖。於本 12的半導體晶片i〇b的電路面與成有金屬凸塊 片40的電路面相向配置，並“的半導體晶 II中的（b)所示的半導體裝置8〇。另外亦可於 晶片l〇b的電路面上與（a)同樣地形成接著劑層。 圖_12絲稍时接著髮的半物晶/與搭載有 半導體元件的基板壓接而製造半導體裝置的方法的一例的 圖。於本實施形態中，如圖12中的（a)所示，作為搭載 有半導體元件的基板，準備於藉由上述方法所得的;^體 裝置100的半導體晶片的背面上形成有金屬凸塊者。繼 而’於形成有金屬凸塊的半導體晶片10b的金屬凸塊形成 面上’將附有接著劑層的半導體晶片40的電路面相向配 置，並將該等壓接。如此而獲得圖12中的（b)所示的作 為含有多個半導體晶片的積層體的半導體裝置1ω。另 外，凸塊12的其中一方亦可為墊。 其次，對本發明的第2半導體裝置加以說明。 圖13〜圖20為表示本發明的第2半導體襞置的製造 方法的一實施形態的示意圖。本實施形態的製造方法包括 31 201250873 ^ζουχριι' 以下步驟β 步驟1 (接著劑層形成步驟）：於形成有金屬凸塊12 的半導體晶圓10的電路面S1上塗佈液狀感光性接著劑5 (參照圖13及圖14)。 步驟2 (B階化步驟）：自包含所塗佈的液狀感光性接 著劑的感光性接著劑層侧進行曝光，使感光性接著劑層B 階化。（例如參照圖3及圖4)。 步驟3 (半導體晶圓壓接步驟）：於設有接著劑層6的 半導體晶圓ίο上進行其他半導體晶圓51的對位後， 晶圓壓接機進行軸（參照圖15)。藉此 圓積層體60。 又于干等體日日 步驟4 (背面研磨步驟）：於半導體晶圓 磨削之側為相反侧的面（背面)上，貼附可剝離的膠二 3面。广後’對半導體晶圓積層體自膠； 厚度為止（參料導體晶圓積層體磨薄至預定的 步驟5 (半導體晶圓積層歩 + 的半導H a圓# μ _ &quot;.於錯由磨削而經磨薄 的背面上使電極顯出，夢由再配绩牛 驟而製作金屬凸塊，殘留再 W错由再配線步 脂將表面密封，設置密封樹脂/的連接部而以密封樹 複上述步驟i〜步驟4 (接^ 配線層）18，然後重 圓壓接步驟），藉此於半導體^層^成步獅階化步驟/晶 體晶圓（參照圖Γ7)。日®積層體上進—步積層半導 步驟Μ再配線及焊錫球搭载步驟）：對半導體晶圓10 201250873 4260lpif 2 2行磨削、研磨，藉此使電極_出，_面上藉由 再配線步驟設置密封樹脂層（再配線層）18，進而於 凸塊12上搭載焊錫球14 (參照圖18)。 =7 (切·驟）：於半導體晶圓積層體的與搭載有 知錫球的面為相反側的面上貼附膠帶（切割膠帶）％，八 著切割線進行切割，切分成積層有半導體元件56a、半^ ^件仏及半導體元件他的半導體元件積層體（參照 體，藉此獲 步驟8 (拾取步驟）：拾取半導體元件積芦 得半導體裝置120 (參照圖20)。 、曰 以下，對各步驟加以詳述。 (接著劑層形成步驟） 的雷2有,形成有金屬凸塊12的電路面之半導體晶圓⑺ 的電路面S1上塗佈綠感光性接著#M。塗佈可於 川内將貼附有膠帶4的半導體晶圓1〇固定於夾具21、的狀 態下進行。膠帶4的作用為防止f面的污染、防止晶圓破 損，只要可防止污染或破損’财種麵無制限定。另 外’亦可不使用膠帶4而進行塗佈。 、液狀感光性接著劑的塗佈方法是選自印刷法、旋塗 法j喷霧塗佈法、喷射分配法及喷墨法等中。該些方法中， 就薄膜化及膜厚均勻性的觀點而言，較佳為旋塗法（圖2 中的（a))或噴霧塗佈法（圖2中的（b))e可於旋塗裝置 所具有的吸附台中形成有孔，亦可使吸附台為網狀。就不 易殘留吸附痕的方面而言’較佳為吸附台為網狀。為了防 33 201250873 Η^ουιριι 止晶圓的不平整及邊緣部的隆起，利用旋塗法的塗佈較佳 為以500 rpm〜5000 rpm的轉速進行。就同樣的觀點而言， 轉速更佳為1000 rpm〜4000 rpm。亦可於旋塗台上具備溫 度調節器以調整液狀感光性接著劑的黏度。 本實施形態中的金屬凸塊的種類並無特別限定，可列 舉包含鋼、銀、金等者。亦可於金屬凸塊12上更設置焊錫 球。焊錫球可列舉包含含有鉛的焊錫或無鉛焊錫等先前公 知的焊錫材料者。作為金屬凸塊，就製作的容易性或成本 的觀點而言，較佳為於金屬凸塊的情況下不易製作氧化膜 的金、成本低廉的銅。 半導體晶圓可使用附有凸塊的晶圓，該附有凸塊的晶 圓具有由金屬凸塊形成的突起電極、或具有由金屬凸塊及 焊錫球形成的突起電極。關於突起電極的高度，僅金屬凸 塊的情形時可列舉5 μηι〜40 μιη左右，包含金屬凸塊及焊 錫球的情形時可列舉20 μιη〜60 μηι左右。另外，晶圓的 厚度是根據晶圓尺寸而不同，若為6吋至12吋的範圍的晶 圓則可使用磨削刚的晶圓厚度為625 μηι〜775 μιη者。 關於接著劑層的厚度，就壓接時的連接性及樹脂填充 性的觀點而言，僅金屬凸塊的情形時，較佳為凸塊高度χ1 與接著劑層的厚度y的關係滿足2χ1。於在 金屬凸塊上具有焊錫球的情形時，較佳為金屬凸塊高度 x2、焊錫凸塊Χ3及接著劑層的厚度y的關係滿足x2$y、 x2+x3 — y 〇 液狀感光性接著劑可於注射器等中保存，亦可於旋塗S 28 201250873 42601pif by the cutting, the semiconductor wafer is divided into a plurality of semiconductor wafers each having an adhesive layer 6a (the semiconductor element is preferably cut by a tape (cut tape plus a full ring) In this state, a dicing blade is used. The semiconductor wafer 4G of the enamel layer is attached. The interface is attached (crimping step) = after 'the semiconductor wafer splicing agent layer 6a to be sliced by the bonding device - And picking up, that is, picking up the four layers of the metal layer. Then, the semiconductor element 4 with the adhesive layer is crimped (supported for the semiconductor device with the metal bump or electrode pad 16; 2 = component mounting support member 15). Thus, the adhesive layer with the adhesive 1 semiconductor wafer is sandwiched between the semiconductor crystal supporting members with the adhesive layer and crimped, whereby the semiconductor wafer can be realized. The support member is connected and turned on. 〃 The conditions for the connection are as long as the bonding of the metal electrodes and the bonding by the soldering of the solder balls can be achieved, for example, as long as the temperature is two 150 C to 400 C, and the pressure is for When the range is from 1 MPa to 2. MPa and the time is from about 1 second to about 30 seconds, the bonding can be achieved. (Sealing step) The semiconductor device including the semiconductor wafer 1a is sealed by a reading material to obtain a semiconductor device. 100. A semiconductor device having a structure in which a semiconductor element and a semiconductor element are supported by a thin supporting member can be manufactured through the above-described steps. The configuration and manufacturing method of the semiconductor device are not limited to the above embodiments, and only 2 29 201250873 HZOUipif can be changed as appropriate without departing from the gist of the present invention. For example, the order of steps 1 to 7 can be changed as needed, and more preferably, it can be applied to the circuit surface of the previously cut semiconductor wafer; The adhesive is followed by irradiation of the miscellaneous (the fourth is a purple line) to make the adhesive B. At this time, a patterned mask can also be used. In the adhesive layer forming step, the liquid can also be used. After the photosensitive layer is subsequently deposited on the semiconductor crystal surface, the viscosity of the liquid photosensitive adhesive is lowered by heating the semiconductor wafer, or ultrasonic waves are applied to decompress the vacuum chamber. Thereby, the pores around the bumps are reduced. 2 Further, after the liquid photosensitive adhesive is applied onto the circuit surface of the semiconductor 3 and exposed, the liquid photosensitive property is further applied and exposed. In this way, you can get the touch of Lai. At this time, you can also use the second coating to make the exposure without the (4) button, and get the adhesive layer with different physical properties. After the grading and thermocompression bonding, the heat curing treatment is performed for 5 minutes to 12 G minutes at just 150 ° C. By such hardening treatment, it is possible to suppress the gap caused by the high temperature heat history step of 17 G ° C or higher. In the case of the semiconductor element mounting floor member in the above-described pressure bonding step, the semiconductor wafer, the fresh conductor element, and the substrate of the body 7L can be crimped. A semiconductor wafer 4 with an adhesive layer is attached. (1) in FIG. 10 is a view showing an example of a semiconductor device 7A with a semiconductor element, which is formed on a circuit surface of a semiconductor wafer 54 on which a metal bump is formed, and is pressed. A semiconductor wafer 40 with a 201250873 42601pif adhesion layer is attached. Fig. 1 is a cross-sectional view taken along line b-b of (a) ten. (b) is supplied to the above-described member for semiconductor manufacturing in Fig. 10 . The semiconductor crystal 11 of any of the elements can be used as a semiconductor device conductor body in a half-embodiment, as shown in the example of the method in U. The circuit surface of the semiconductor wafer i〇b of the present invention is disposed opposite to the circuit surface on which the metal bump piece 40 is formed, and the semiconductor device shown in (b) of the semiconductor crystal II is also used. In the same manner as (a), the adhesive layer is formed on the circuit surface of the layer 〇b. Fig. 12 is a diagram showing an example of a method of manufacturing a semiconductor device by pressing a semiconductor wafer with a substrate mounted on a semiconductor element. In the present embodiment, as shown in FIG. 12(a), a substrate on which a semiconductor element is mounted is prepared by the above method, and a metal bump is formed on the back surface of the semiconductor wafer of the device 100. Then, 'on the metal bump forming surface of the semiconductor wafer 10b on which the metal bumps are formed', the circuit faces of the semiconductor wafer 40 with the adhesive layer are disposed to face each other, and these are crimped. Thus, FIG. 12 is obtained. The semiconductor device 1ω as a laminate including a plurality of semiconductor wafers shown in (b), and one of the bumps 12 may be a pad. Next, the second semiconductor device of the present invention will be described. Figure 20 shows this A schematic diagram of an embodiment of a method for fabricating a second semiconductor device according to the present invention. The manufacturing method of the present embodiment includes 31 201250873 ^ζουχριι'. The following step β step 1 (adhesive layer forming step): in the case where the metal bumps 12 are formed A liquid photosensitive adhesive 5 is applied onto the circuit surface S1 of the semiconductor wafer 10 (see FIGS. 13 and 14). Step 2 (B-stage step): sensitization from the liquid photosensitive adhesive to be applied The adhesive layer side is exposed to form a photosensitive adhesive layer B. (For example, refer to FIG. 3 and FIG. 4) Step 3 (Semiconductor wafer bonding step): a semiconductor wafer provided with an adhesive layer 6 After the alignment of the other semiconductor wafers 51 is performed, the wafer crimping machine performs the axis (see FIG. 15), thereby forming the laminated body 60. In the dry day, step 4 (back grinding step): in the semiconductor The side of the wafer is grounded on the opposite side (back side), and the two sides of the peelable glue are attached. The wide back 'self-adhesive to the semiconductor wafer laminate; the thickness (the reference conductor wafer laminate is thinned) To the predetermined step 5 (semiconductor wafer laminate 歩+ Semi-conducting H a circle # μ _ &quot;. The electrode is displayed on the back surface which is ground by grinding and grinding, and the metal bump is made by re-matching the performance of the cow, and the residue is re-wiring. Sealing the surface, providing a sealing resin/connection portion to seal the above steps i to 4 (connecting the wiring layer) 18, and then repeating the crimping step), thereby forming a lion step in the semiconductor layer /Crystal Wafer (Refer to Fig. 7). Day® laminate body advancement step stacking semi-conductive step Μ rewiring and solder ball mounting step): Grinding and grinding semiconductor wafer 10 201250873 4260lpif 2 2 lines The sealing resin layer (rewiring layer) 18 is provided on the electrode_out, _ plane by the rewiring step, and the solder ball 14 is mounted on the bump 12 (see FIG. 18). =7 (cutting and cutting): A tape (cut tape) is attached to the surface of the semiconductor wafer laminate opposite to the surface on which the solder ball is mounted, and is cut by a cutting line, and is cut into laminated semiconductors. The element 56a, the half element, and the semiconductor element laminated body (the reference body, thereby obtaining the step 8 (pickup step): picking up the semiconductor element product semiconductor device 120 (refer to FIG. 20). The steps of the step (the adhesive layer forming step) are as follows: the circuit surface S1 of the semiconductor wafer (7) on which the metal bump 12 is formed is coated with green sensitivity and then #M. The semiconductor wafer 1 to which the tape 4 is attached is fixed in the jig 21 in the middle of the river. The tape 4 functions to prevent contamination of the f-plane and prevent wafer damage, and it is possible to prevent contamination or damage. It is also possible to apply without using the tape 4. The method of applying the liquid photosensitive adhesive is selected from the group consisting of a printing method, a spin coating method, a spray coating method, a spray dispensing method, and an ink jet method. In these methods, the film From the viewpoint of film thickness uniformity, it is preferred that the spin coating method ((a) in FIG. 2) or the spray coating method ((b) in FIG. 2) e can be adsorbed by the spin coating device. A hole is formed in the stage, and the adsorption stage can be made into a mesh shape. In terms of the fact that it is not easy to leave the adsorption mark, it is preferable that the adsorption stage is a mesh shape. In order to prevent the unevenness of the wafer and the edge portion of the film, the film is not protected. For the bulging, the coating by the spin coating method is preferably performed at a rotation speed of 500 rpm to 5000 rpm. From the same viewpoint, the rotation speed is preferably 1000 rpm to 4000 rpm. The temperature adjustment device can also be provided on the spin coating table. The type of the metal bumps in the present embodiment is not particularly limited, and examples thereof include steel, silver, gold, etc. Solder balls may be further provided on the metal bumps 12. The solder ball includes a conventionally known solder material including lead-containing solder or lead-free solder. As the metal bump, it is preferable that the metal bump is not easily oxidized in the case of metal bumps from the viewpoint of easiness of production or cost. Film gold, low cost copper. Semiconductor The circle may use a bump-attached wafer having a bump electrode formed of a metal bump or having a bump electrode formed of a metal bump and a solder ball. Regarding the height of the bump electrode, only In the case of a metal bump, it is about 5 μηη to 40 μηη, and in the case of including a metal bump and a solder ball, it is about 20 μm to 60 μηι. The thickness of the wafer varies depending on the wafer size. For wafers in the range of 6 吋 to 12 可, the thickness of the wafer to be polished is 625 μηι to 775 μηη. The thickness of the adhesive layer is from the viewpoint of connectivity and resin filling properties at the time of crimping. In the case of only metal bumps, it is preferable that the relationship between the bump height χ1 and the thickness y of the adhesive layer satisfies 2χ1. In the case where the solder bump is provided on the metal bump, it is preferable that the relationship between the metal bump height x2, the solder bump Χ3, and the thickness y of the adhesive layer satisfies the liquid sensitivity of x2$y, x2+x3 - y 〇 The agent can be stored in a syringe or the like, or can be spin coated.

34 201250873 42601pif 裝置的注射器設置部分具備溫度調節器。 =由例如旋塗法將液狀感光性接 ，有時多餘的液狀感光性接著_著 r行清洗而加以去除。藉由進行=著 說明的方法相同的方法。另外，關於將中 :分的多餘的接著劑去除的方法，亦可使用 ‘體裝置的製造方法中說明的方法相同的方法。 (B階化步驟） 本實施形態的B階化可與上述第丨半導體裝置的製造 方法中說明的B階化步驟同樣地進行。 β於本實施形態中，關於曝光後的接著劑層的膜厚，就 壓接時的連接性及樹脂填充性的觀點而言，僅金屬凸塊的 情形時，較佳為凸塊高度xl與接著劑層的厚度7的關係滿 足〇.85xlSy$1.2xl。於在金屬凸塊上具有焊錫球的情形 時，較佳為金屬凸塊高度x2、焊錫凸塊x3及接著劑層的 厚度y的關係滿足X2 $ y、x2+x3 g y。 (半導體晶圓壓接步驟） 於設有接著劑層6的半導體晶圓1〇上進行其他半導體 晶圓51的對位後，藉由熱進行壓接（圖15中的（a))。於 本實施形態中，將半導體晶圓51與半導體晶圓1〇熱壓接， 上述半導體晶圓51具備與半導體晶圓1〇所具有的金屬凸 塊（電極）12連接的突起電極（金屬凸塊12及焊錫球14)。 5 35 201250873. 再者，半導體晶圓51亦可為與半導體晶圓10同樣地設有 接著劑層的半導體晶圓。 半導體晶圓彼此較佳為使用晶圓壓接機經由半導體晶 圓的金屬凸塊而被壓接以實現導通。作為壓接的條件，於 為了將焊錫球或銅凸塊等的氧化膜去除而含有助焊劑成分 的情形時，只要於助焊劑成分反應的溫度下可實現金屬電 極的接合、藉由焊錫球的溶融進行的接合，就沒有問題， 例如只要為溫度為150Ϊ〜400eC、壓力為0.1 MPa〜2.0 MPa、時間為1〇秒〜2小時左右的範圍，則可實現上述接 合。於晶圓壓接時，必須進行對位，故較佳為接著劑層6 具有可見光透射性。接著劑層6較佳為可見光透射率達到 10%以上。若可見光透射率小於1〇%，則有於晶圓壓接機 中無法進行識別標記的識別、無法進行對位作業的傾向。 另外，於晶圓壓接機所使用的鹵素光源與導光管（ guide)的波長相對強度中，55〇 nm〜6〇〇細最強故接 著劑層6較佳為555 nm的可見光透射率為1〇%〜1〇〇%， 更佳為18%〜100%，進而佳為25%〜1〇〇%。 藉由該步驟，獲得藉由接著劑層8將兩個半導體晶圓 1〇、51貼合而成的半導體晶圓積層體6〇(圖15中的（b))。 (背面研磨步驟） 可藉由對半導體晶圓積層體進行背面研磨而使其薄型 =於該情形時，於半導體晶圓積層體的與研磨側i相反 ^面（肖面）上貼附可娜的膠帶（背面研磨膠帶等） (圖16中的（a))e貼附後，對半導體晶圓積層體自膠34 201250873 The 42601pif unit has a temperature regulator in the injector setting section. = The liquid is photosensitive by, for example, spin coating, and the excess liquid sensitivity is sometimes removed by washing. By doing the same method as the method described. Further, the method of removing the excess adhesive in the middle portion may be the same as the method described in the method for producing the bulk device. (B-staged step) The B-stage of the present embodiment can be performed in the same manner as the B-staged step described in the method of manufacturing the second semiconductor device. In the present embodiment, the film thickness of the adhesive layer after the exposure is preferably a bump height xl and a metal bump in terms of the connectivity at the time of pressure bonding and the resin filling property. The relationship of the thickness 7 of the subsequent layer satisfies 〇.85xlSy$1.2xl. In the case where the solder bump is provided on the metal bump, it is preferable that the relationship between the metal bump height x2, the solder bump x3, and the thickness y of the adhesive layer satisfies X2 $ y, x2+x3 g y . (Semiconductor Wafer Bonding Step) After the alignment of the other semiconductor wafer 51 is performed on the semiconductor wafer 1 provided with the adhesive layer 6, the bonding is performed by heat ((a) in Fig. 15). In the present embodiment, the semiconductor wafer 51 is thermally bonded to the semiconductor wafer 1 and the semiconductor wafer 51 is provided with a bump electrode (metal bump) connected to the metal bump (electrode) 12 of the semiconductor wafer 1 Block 12 and solder balls 14). 5 35 201250873. Further, the semiconductor wafer 51 may be a semiconductor wafer in which a subsequent layer is provided similarly to the semiconductor wafer 10. The semiconductor wafers are preferably crimped to each other using a wafer crimper via metal bumps of the semiconductor wafer to effect conduction. When the flux component is contained in order to remove the oxide film such as a solder ball or a copper bump, the bonding of the metal electrode and the solder ball can be achieved at the temperature at which the flux component reacts. There is no problem in the bonding by melting, and for example, the bonding can be achieved as long as the temperature is 150 Torr to 400 eC, the pressure is 0.1 MPa to 2.0 MPa, and the time is about 1 sec to 2 hours. When the wafer is crimped, it is necessary to perform alignment, so it is preferable that the adhesive layer 6 has visible light transmittance. The subsequent agent layer 6 preferably has a visible light transmittance of 10% or more. When the visible light transmittance is less than 1%, the recognition mark cannot be recognized in the wafer crimping machine, and the alignment operation tends not to be performed. Further, in the relative intensity of the wavelength of the halogen light source and the light guide used in the wafer crimping machine, 55 〇 nm to 6 〇〇 is the strongest, so the adhesive layer 6 preferably has a visible light transmittance of 555 nm. 1〇%~1〇〇%, more preferably 18%~100%, and further preferably 25%~1〇〇%. By this step, the semiconductor wafer laminate 6〇 obtained by bonding the two semiconductor wafers 1 and 51 by the adhesive layer 8 is obtained ((b) in Fig. 15). (Back grinding step) The semiconductor wafer laminate can be back-polished to have a thin shape. In this case, the semiconductor wafer laminate is attached to the polishing side i opposite to the surface (Shaw face). Tape (back grinding tape, etc.) ((a) in Figure 16) e attached, self-adhesive to the semiconductor wafer laminate

36 201250873 42601pif 帶30的相反側進行研磨，將半導體晶圓 的厚度為止（圖中的（b))。研磨較麵至預定 胳主墓辦曰ilMO lil中土為於稭由膠帶3C 將+ ¥體日日圓1G固疋於研磨用的夾具的狀 裝置32來進行。 使用研磨 於本實施形態中，較佳為使半導體晶 導體晶圓51的厚度薄至10μηι〜15〇μιη為止。 晶圓積層财的_化的半導體晶圓52 μιη，則容易產生半導體晶圓的破損，另一方^若超 150畔，則難以應對半導體裝置的小型化的要求。磨削 後，將半導體晶圓積層體的背面研磨膠帶剝離，_此= 得經薄型化的半導體晶圓積層體。將背面研磨膠^剝離^ 方法例如刊舉町方法：使帛藉由歸雜光線（典型 而言為紫外線）而黏著性下降的膠帶，自膠帶3()側進^曝 光後，將其剝離。 (半導體晶圓積層步驟） 於藉由磨削而經磨薄的半導體晶圓積層體的背面上製 作凸塊（電極）’藉此可於半導體晶_層體上進—步積層 半導體晶圓。於該情形時，於經磨削的半導體晶圓的背面 上製作凸塊12 (圖17中的（a))，ϋ重複上述步驟1〜步 ，4(圖17中的（b)、圖17中的（c)、圖17中的（d))， 藉此可積層半導體晶圓^視需要料進—步增加半導體晶 圓的積層。 (再配線及焊錫球搭載步驟） 首先，自研磨後的半導體晶圓積層體剝離背面研磨膠 37 201250873 =^悔的面為相反之側再次層疊背面研磨膠帶 ’如圖18中的（a)所示，以使被晶圓遮住的電 〜員出的方式進行背面研磨，藉此使背©電路顯出。 配二顯Γ而!極t半導體晶圓16上進行再配線而形成 ;所路出的電極上搭載焊錫球14 (圖18中 配線可藉由作為乾式成膜法的使用濺鍍的方法 或作為濕式成膜法的鍍敷法來進行。另外 ::通常所進行的方法、例如市售的谭錫球晴= (切割步驟） 於半導體晶圓積層體的與搭載有焊錫球的面為相 的面上貼附膠帶（切割膠帶）34 (圖19中的⑷) 切割線進行切割’切分成積層有半導體元件5如、半^ =仏及半導體元件16a的半導體元件積層體（圖Η 〜、（b))。切割是於藉由膠帶（切割膠帶）36將整 疋於框架（晶圓環）的狀態下使用切割刀37進行。 (拾取步驟） 藉由拾取所切分的半導體元件積層體，而獲得半 装置120 (圖20)。 等體 可經由如上所述的步驟而製造具備積層有爭導體 ，構造之半導體裝置。半導财㈣構成及製造方法不限 =於以上的貫施形恶，只要不偏離本發明的主旨則可適宜 例如，可視需要而更換上述步驟的順序。另外， nJ省 38 201250873. *t^.uuipif 略一部分的步驟。 亦可於接著劑層形成步驟中，於將液狀感光性接 塗佈於半導體晶圓的電路面上後，藉由對半導體晶圓進ς 加熱而使餘感紐接著獅財變低，或施加超音波， 或於真空腔$内減壓，藉此減少&amp;塊周邊的孔隙。 另外 刃、1於將液狀感光性接著劑塗佈於半導體 的電路面上並進行曝光後，進—步塗佈液狀感光性接 亚進订曝光’藉此獲得厚朗接著綱。此時，亦可藉^ ，佈不同組成的液狀感光性接著#丨並進行曝光’ 1¾獲得旦 有不同物性的接著劑層。 /、 〜對於乂著劑層，亦可於B階化及熱麼接後，於l0(rc 5〇匸貫施5分鐘〜120分鐘的熱硬化處理。藉由此種熱 理’可抑制17〇。。以上的高溫熱歷程步驟所導致的 孔隙或剝離，可獲得高可靠性的半導體裝置。 半導= 所示的半導體裝置例如亦雜—步與其他 密^载切構件接合，其後視需要實施打線接合或 換另外/亦可於上述接著劑層形成步驟中，於在金屬凸 接著更設二'錫球14的半導體晶圓1〇的電路面上形成 層鉍由上述_匕步驟後，於半導體晶圓 於具有金屬凸塊12的半導體晶圓⑴貼合（圖U)。 圓獲得圖22中的(a)所示般的半導體晶 μ線:二 面圖。再者，於圖21及圖22中，對晶圓内部 5 39 201250873 的電極省略圖示。 其次，對本發明的第3半導體裝置加以説明。 圖23、圖24為表示本發明的第3半導體裝置的製造 方法的一實施形態的示意圖。本實施形態的製造方法包括 以下步驟。 步驟1 (接著劑層形成步驟）：於形成有金屬凸塊12 的半導體晶圓10的電路面S1上多次塗佈液狀感光性接著 劑5，對該些塗膜（感光性接著劑層）進行曝光，形成耳 有2層以上的構造且最表面層含有助焊劑成分的經B階化 的接著劑層。（參照圖1〜圖3、圖13及圖23) 步驟2 (半導體晶圓壓接步驟）：於設有接著劑層6、 接著劑層7的半導體晶圓10上進行其他半導體晶圓51 對位後，藉由晶圓壓接機進行壓接（參照圖24)。蘇、 獲得半導體晶圓積層體60。 而 少驟3 (背面研磨步驟）：於半導體晶圓積層體 磨削之側為相反側的面（背面）上貼附可剝離的膠鹛 面研磨膠帶等）3〇0貼附後，對半導體晶圓積層^ (月 30的相反側進行磨削，將半導體晶圓積層體磨二 膠帶 厚度為土（參照®⑹。 ^至預定的 步·驟4(半導體晶圓積層步驟）：於藉由磨 ^ 的半導體晶圓積層體的背面上使電極顯出，藉由再每磨薄 驟製作金屬凸塊，殘留再配線層上的連接部^以&amp;配，^ 將表面密封，設置密封樹脂層（再配線層）18後进封橱脂 述步驟1〜步驟3 (接著劑層形成步驟/晶圓壓接步上 201250873 42601pif 研磨步驟），藉此於半導體晶圓積層體上進一步積層半導 晶圓（參照圖17)。 ^ 步驟5 (再配線及焊錫球搭載步驟）：藉由對半導體曰 圓10的背面進行磨削、研磨而使電極顯出，於該面上藉= 再配線步驟而設置密封樹脂層（再配線層）18，進—步於 — 金屬凸塊12上搭載焊錫球14 (參照圖18)。 ' 步驟6 (切割步驟）：於半導體晶圓積層體的與搭载有 焊錫球的面為相反側的面上貼附膠帶（切割膠帶）36，、、八 著切割線進行切割，切分成積層有半導體元件56a、半導 體兀件52a及半導體元件16a的半導體元件積層體 刀 圖 19)。 ^ 步驟7 (拾取步驟）：藉由拾取半導體元件積層體而 得半導體裝置100 (參照圖20)。 ^ 以下’對各步驟加以詳述。 (接著劑層形成步驟） 於本實施形態中’於具有形成有金屬凸塊12的電路面 之半導體晶圓10的電路面S1上塗佈第】液狀感光性接著 劑，對該塗膜進行曝光而形成内層7，繼而於内層7上塗 佈含有助焊劑成分的第2液狀感光性接著劑，對該塗膜進 行曝光而形成最表面層6。如此而形成2層構成的接著 層。 —塗佈可於在箱2〇内將貼附有膠帶4的半導體晶圓 固^於夾具21的狀態下進行。朦帶4的作用為防止背面的 5木防_iLaaD仙’ 要可防止污麵破制種類並無 201250873 420Uipif 特別限制。另外，亦可不使用膠帶4而進行塗佈。 液狀感光性接著劑的塗佈方法是選自印刷法、旋塗 法、噴霧塗佈法、喷射分配法及噴墨法等中。該些方法中， 就薄膜化及膜厚均句性的觀點而言，較佳為旋塗法（圖2 中的（a))或噴霧塗佈法（圖2中的（乜））。可於旋塗裝置 所具有的吸附台中形成有孔，亦可使吸附台為網狀。就不 易殘留吸附痕的方面而言，較佳為吸附台為網狀。為了防 止晶圓的不平整及邊緣部的隆起，利用旋塗法的塗佈較佳 為以500 rpm〜5000 rpm的轉速進行。就同樣的觀點而言， 轉速更佳為1000 rpm〜4000 rpm。亦可於旋塗台上具備溫 度調節器以調整液狀感光性接著劑的黏度。 本實施开^態中的金屬凸塊的種類並無特別限定，可列 舉包含銅、銀、金等者。亦可於金屬凸塊12上更設置焊錫 球。焊錫球可列舉包含含有鉛的焊錫或無鉛焊錫等先前公 知的焊錫材料者。作為金屬凸塊，就製作的容易性或成本 的觀點而言，較佳為於金屬凸塊的情況下不易製作氧化膜 的金、成本低廉的銅。 半導體晶圓可使用附有凸塊的晶圓，該附有凸塊的晶 圓具有由金屬凸塊形成的突起電極、或具有由金屬凸塊及 焊錫球形成的突起電極。關於突起電極的高度，於僅金屬 凸塊的情形時可列舉5 μιη〜40 μιη左右，於包含金屬凸塊 及焊錫球的情形時可列舉20 μιη〜60 μιη左右。另外，晶 圓的厚度是根據晶圓尺寸而不同，若為6吋至12吋的範圍 的晶圓，則可使用磨削前的晶圓厚度為625 μιη〜775 μιη36 201250873 42601pif The opposite side of the tape 30 is polished to the thickness of the semiconductor wafer ((b) in the figure). Grinding the face to the predetermined shovel 曰 MO MO MO 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 曰 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由 由In the present embodiment, it is preferable to make the thickness of the semiconductor crystal conductor wafer 51 as thin as 10 μm to 15 μm. When the wafer semiconductor layer is 52 μm, the semiconductor wafer is easily broken, and if the other is over 150, it is difficult to cope with the miniaturization of the semiconductor device. After the grinding, the back surface grinding tape of the semiconductor wafer laminate is peeled off, which is a thinned semiconductor wafer laminate. The back-grinding gel is peeled off. For example, the tape method is used to peel off the tape from the tape 3 () by the tape which is reduced in adhesion by the light (typically ultraviolet rays), and then peeled off. (Semiconductor Wafer Lamination Step) A bump (electrode) is formed on the back surface of the thinned semiconductor wafer laminate by grinding, whereby the semiconductor wafer can be laminated on the semiconductor crystal layer. In this case, the bumps 12 are formed on the back surface of the ground semiconductor wafer ((a) in Fig. 17), and the above steps 1 to 4, 4 (b (b), Fig. 17) are repeated. In (c) and (d) in FIG. 17, the semiconductor wafer can be laminated to increase the stacking of the semiconductor wafer. (Rewiring and Solder Ball Mounting Procedure) First, the back surface polishing tape is peeled off from the semiconductor wafer laminate after polishing. The surface of the back surface is laminated on the opposite side, as shown in (a) of Fig. 18 It is shown that the back-circuit is displayed by back-polishing so that the electric power that is blocked by the wafer is discharged. The second semiconductor wafer is formed by rewiring on the semiconductor wafer 16; the solder ball 14 is mounted on the electrode that is discharged (the wiring in FIG. 18 can be used as a dry film forming method or a sputtering method). The plating method of the wet film formation method is carried out. In addition, a method generally performed, for example, commercially available Tan Xi Quan Qing = (cutting step), is a surface of the semiconductor wafer laminate which is opposite to the surface on which the solder balls are mounted. Attached tape (cut tape) 34 ((4) in Fig. 19) The cutting line is cut and cut into semiconductor element laminated bodies in which semiconductor elements 5, such as semiconductor layers 16a and semiconductor elements 16a are laminated (Fig. 、, (b) The cutting is performed by using a dicing blade 37 by a tape (cutting tape) 36 in a state of being folded over the frame (wafer ring). (Picking step) By picking up the divided semiconductor element laminate, The semiconductor device 120 (FIG. 20) is obtained. The semiconductor device can be manufactured by the above-described steps, and the semiconductor device having the structure of the laminated conductor can be manufactured. The semi-conductor (four) structure and the manufacturing method are not limited to the above-described effects. As long as it does not deviate from the gist of the present invention For example, the order of the above steps may be changed as needed. In addition, nJ Province 38 201250873. *t^.uuipif a part of the steps. In the adhesive layer forming step, the liquid photosensitive layer may be applied to the semiconductor. After the circuit surface of the wafer, by heating the semiconductor wafer, the residual sensation is lowered, or ultrasonic waves are applied, or the vacuum chamber is decompressed, thereby reducing the area around the block. Further, the blade 1 is applied to the circuit surface of the semiconductor after the liquid photosensitive adhesive is applied and exposed, and then the liquid photosensitive photosensitive exposure is applied in advance. At this time, it is also possible to obtain a layer of an adhesive having different physical properties by using a liquid photosensitive property of different compositions and then performing the exposure to obtain a layer of an adhesive having a different physical property. After the heat is connected, the heat hardening treatment is performed for 10 minutes to 120 minutes at rc 5 . By this heat treatment, 17 〇 can be suppressed. The pores or peeling caused by the above high temperature heat history step A highly reliable semiconductor device can be obtained. Semi-conductor = shown The conductor device is, for example, also joined to the other bonding members, and is required to be wire bonded or replaced in the subsequent step. Alternatively, in the above-mentioned adhesive layer forming step, a second 'tin ball 14 is further formed on the metal protrusion. A layer is formed on the circuit surface of the semiconductor wafer, and the semiconductor wafer is bonded to the semiconductor wafer (1) having the metal bumps 12 (FIG. U). The circle is obtained in FIG. 22 (a). The semiconductor crystal μ line shown in the figure is a two-side view. In addition, in FIG. 21 and FIG. 22, the electrode of the inside of the wafer 5 39 201250873 is omitted. Next, the third semiconductor device of the present invention will be described. 23 and 24 are schematic views showing an embodiment of a method of manufacturing a third semiconductor device of the present invention. The manufacturing method of this embodiment includes the following steps. Step 1 (Adhesive layer forming step): a liquid photosensitive adhesive 5 is applied a plurality of times on the circuit surface S1 of the semiconductor wafer 10 on which the metal bumps 12 are formed, and the coating film (photosensitive adhesive layer) Exposure is carried out to form a B-staged adhesive layer having a structure in which the ear has two or more layers and the outermost layer contains a flux component. (Refer to FIG. 1 to FIG. 3, FIG. 13 and FIG. 23) Step 2 (Semiconductor Wafer Bonding Step): Perform other semiconductor wafer 51 pairs on the semiconductor wafer 10 provided with the adhesive layer 6 and the subsequent agent layer 7. After the position, the wafer is crimped by a wafer crimping machine (refer to Fig. 24). Su, obtained a semiconductor wafer laminate 60. And a few steps 3 (back grinding step): attaching a peelable adhesive tape to the surface (back surface) on the side opposite to the side where the semiconductor wafer laminate is ground, etc.) Wafer stacking ^ (The opposite side of the month 30 is ground, and the semiconductor wafer layer is ground to a thickness of two tapes (refer to ® (6). ^ to a predetermined step (semiconductor wafer stacking step): by Electrodes are formed on the back surface of the grounded semiconductor wafer laminate, and metal bumps are formed by each thinning step, and the connection portion on the remaining rewiring layer is sealed with a sealing resin. The layer (rewiring layer) 18 is followed by the sealing of the grease in steps 1 to 3 (the adhesive layer forming step/the wafer bonding step is performed on the 201250873 42601pif polishing step), thereby further laminating the semiconductor layer on the semiconductor wafer laminate. Wafer (see Fig. 17) ^ Step 5 (rewiring and solder ball mounting step): The electrode is exposed by grinding and polishing the back surface of the semiconductor dome 10, and the wiring is repeated on the surface. And set the sealing resin layer (rewiring layer) 18, into - Step - The solder ball 14 is mounted on the metal bump 12 (see Fig. 18). 'Step 6 (Cutting step): Adhesive tape is attached to the surface of the semiconductor wafer laminate opposite to the surface on which the solder ball is mounted ( The dicing tape 36, and the dicing line are cut, and are cut into semiconductor element laminated bodies of the semiconductor element 56a, the semiconductor element 52a, and the semiconductor element 16a. Fig. 19) Step 7 (pickup step): by The semiconductor device 100 is picked up by picking up a semiconductor device laminate (see Fig. 20). ^ Each step will be described in detail below. (Adhesive layer forming step) In the present embodiment, the circuit surface having the metal bumps 12 is formed. Applying a liquid photosensitive adhesive to the circuit surface S1 of the semiconductor wafer 10, exposing the coating film to form the inner layer 7, and then applying a second liquid photosensitive property containing the flux component to the inner layer 7. Next, the coating film is exposed to form the outermost layer 6. Thus, a two-layer adhesive layer is formed. - Coating can be used to fix the semiconductor wafer to which the tape 4 is attached in the case 2 Under the state of 21 The function of the belt 4 is to prevent the 5 wood guards on the back side. _iLaaDxian' is not limited to the 201250873 420Uipif. It can also be coated without using the tape 4. Liquid photosensitive adhesive The coating method is selected from the group consisting of a printing method, a spin coating method, a spray coating method, a spray dispensing method, and an ink jet method. Among these methods, from the viewpoint of film formation and film thickness uniformity, it is preferred. It is a spin coating method ((a) in Fig. 2) or a spray coating method ((乜) in Fig. 2). A hole may be formed in the adsorption stage of the spin coating apparatus, or the adsorption stage may be a mesh. In terms of the fact that the adsorption trace is not easily left, it is preferred that the adsorption stage be in the form of a mesh. In order to prevent unevenness of the wafer and bulging of the edge portion, the coating by spin coating is preferably carried out at a number of revolutions of 500 rpm to 5000 rpm. From the same point of view, the rotation speed is preferably from 1000 rpm to 4000 rpm. A temperature regulator may also be provided on the spin-on stage to adjust the viscosity of the liquid photosensitive adhesive. The type of the metal bump in the present embodiment is not particularly limited, and may include copper, silver, gold, or the like. Solder balls may also be provided on the metal bumps 12. The solder ball may be a previously known solder material including lead-containing solder or lead-free solder. As the metal bump, from the viewpoint of easiness of production or cost, it is preferable that in the case of a metal bump, it is difficult to produce gold as an oxide film and low-cost copper. The semiconductor wafer may use a bump-attached wafer having a bump electrode formed of a metal bump or a bump electrode formed of a metal bump and a solder ball. The height of the bump electrode is about 5 μm to 40 μm in the case of only the metal bump, and about 20 μm to 60 μm in the case of including the metal bump and the solder ball. In addition, the thickness of the wafer varies depending on the wafer size. For wafers ranging from 6 Å to 12 Å, the wafer thickness before grinding can be 625 μm to 775 μm.

42 S 201250873 4260 lpif 者。 關於接著劑層（包含最表面層的總厚）的厚度，就壓 接時的連接性及樹脂填充性的觀點而言，於僅金屬凸塊的 It形（例如圖13)時，較佳為凸塊高度χ1與接著劑層的 厚度y的關係滿足0.85xlSygL2xl，且較佳為與接著劑 層的=層的厚度（即自接著劑層的厚度減去最表面層的厚 度所仔的尽度）yl的關係滿足〇 8x1 gyl g 1 15x1。於在 金屬凸塊上具有焊錫球的情形（例如圖時，較佳為金 屬凸塊馬度x2、焊錫凸塊x3、接著劑層的厚度y及内層的 厚度 yl 的關係滿足 X2$yl、〇.85 (x2+x3) gy^12 U2+x3)。滿足該關係的較佳理由在於：42 S 201250873 4260 lpif. The thickness of the adhesive layer (including the total thickness of the outermost layer) is preferably in the shape of the metal bump (for example, FIG. 13) from the viewpoint of the connectivity at the time of pressure bonding and the resin filling property. The relationship between the bump height χ1 and the thickness y of the adhesive layer satisfies 0.85x1 SygL2xl, and is preferably the thickness of the layer of the adhesive layer (i.e., the thickness from the thickness of the adhesive layer minus the thickness of the outermost layer). The relationship of yl satisfies 〇8x1 gyl g 1 15x1. In the case where the solder bump is provided on the metal bump (for example, the metal bump mass x2, the solder bump x3, the thickness y of the adhesive layer, and the thickness y of the inner layer are satisfied to satisfy the X2$yl, 〇 .85 (x2+x3) gy^12 U2+x3). The better reasons to satisfy this relationship are:

時炼融而高度減小，間隙變窄，故樹脂容易大量=接； 致產生孔隙。 輯㈡V ，本實施形態中，就兼顧對連接後的可靠性的不良影 液狀感光性接著劑可於注射器等中保存，亦可於 又置的注射器設置部分具備溫度調節器。 、 =由例如旋塗法將液狀感光性接著劑塗佈 =圓上時，有時多餘的液狀感光性接著_著於 = =邊，分。可於旋塗後利用溶劑等對此種多 = 進仃清洗而加以去除。藉由進行去除，可抑姆置 *。可使賴上述第丨半導體裝置的製造方法中的= 法相同的方法。另外，關於將半導體晶圓的邊緣部分的！' 43 201250873. *tzouipif 耆劑去除的方法，亦可使用與上述第1半導體裝置 的製k方法巾說明的方法相同的方法。 於本實施形態中，對藉由塗佈而由液狀感光性接著劑 =成的塗膜（感紐接著_)藉㈣絲置9照射活性 /線（典型而言為紫外線）’使感光性接著劑層B階化而 形成接著騎。藉此可將㈣階㈣接著劑卵定於半導 體晶圓10上，並且降低接著劑層的表面的黏性。如此而獲 得的附有接著劑層的半導體晶圓4〇、半導體晶圓42的操 作性優異，並且可充分減少凸塊部分的孔隙，而且可充分 減小磨削後的翹曲，而且接著劑層具有凸塊的露頭性 的最表面層。 本實施形態的B階化可與上述第丨半導體裝置的製造 方法中說明的B階化步驟同樣地進行。 於本實施形態中，對最表面層及内層的各層分別反覆 進行液狀感光性接著劑的塗佈及利用光照射的B階化而形 成接著劑層，但亦可於多次塗佈液狀感光性接著劑後進行 利用光照射的B階化。再者，於如本實施形態般藉由光照 射使下層B階化後塗佈其後的液狀感光性接著劑的情況 下，谷易使膜厚變均勻，故較佳。另外，内層可積層多層。 於本實施形態中，關於曝光後的接著劑層的膜厚（包 含最表面層的總厚）’&gt;?尤壓接時的連接性及樹脂填充性的觀 點而言，於僅金屬凸塊的情形（例如圖13)時，較佳為凸 塊高度xl與接著劑層的厚度y的關係滿足 0.85x1-y-1.2x1，且較佳為與接著劑層的内層的厚度（即 44 201250873 4260 lpif 自接著劑層的厚度減去最表面層的厚度所得的厚度）yl的 關係滿足0.8x1 SylS 1.15x1。於在金屬凸塊上具有焊錫球 的情形（例如圖1)時，較佳為金屬凸塊高度χ2、焊錫凸 塊x3、接著劑層的厚度y及内層的厚度yl的關係滿足 x2Syl、0.85 (x2+x3 ) 1.2 (x2+x3)。 (半導體晶圓壓接步驟） 於设有包含内層7及最表面層6的接著劑層的半導體 晶圓10上進行其他半導體晶圓51的對位後，藉由熱進行 壓接（圖24中的（a))。於本實施形態中，將半導體晶圓 51與半導體晶圓1〇熱壓接，上述半導體晶圓51具備與半 ‘體晶圓10所具有的金屬凸塊（電極）丨2連接的突起電 極（金屬凸塊12及焊錫球14)。再者，半導體晶圓51亦 可為與半導體晶圓10同樣地設有接著劑層的半導體晶圓。 半導體晶圓彼此較佳為使用晶圓壓接機經由半導體晶 圓的金屬凸塊而被壓接以實現導通。作為壓接的條件，只 要於為了將料球摘凸料的氧化膜去除而含有於最表 面層6中的助焊劑成分反應的溫度下，可實現金屬電極的 接合、藉由嬋錫球的熔融進行的接合，就沒有問題，例如 只要為溫度為150T：〜40(TC、壓力為〇] Mpa〜2 〇 Mpa、 時間為10秒〜2小時左右的範圍，則可實現上述接合。於 曰曰圓壓接時’必須進行對位，故較佳為接著騎具有可見 ，透射性。接著劑層較佳為可見光透射率達到1()%以上。 若可見光透射率小於1〇% ’則有於晶圓壓接機中無法進行 識別標記的識別，無法進行對位作業的傾向。另外，於晶 45 201250873 ^fZOUipif 圓壓接機中所使用的鹵素光源與導光管的波長相對強度 中，550 nm〜600 nm最強，故接著劑層6較佳為555 nm 的可見光透射率為10%〜100%，更佳為18%〜100%，進 而佳為25%〜100%。 藉由該步驟，可獲得半導體晶圓積層體6〇，該半導體 晶圓積層體60是藉由接著劑層8將2個半導體晶圓、 51貼合而成（圖24中的（b))。 ^背面研磨步驟、半導體晶圓積層步驟、再配線及谭錫 球搭載步驟、切割步驟以及拾取步驟可藉由與上述第2半 導體裝置的製造方法巾說明的各步驟相同的方法及條件來 進行（參照圖16〜圖20)。At the time of refining, the height is reduced, and the gap is narrowed, so that the resin is easily replaced by a large amount; (2) V. In the present embodiment, the liquid-like photosensitive adhesive which satisfies the reliability after the connection can be stored in a syringe or the like, or a temperature adjuster can be provided in the additional syringe installation portion. = When the liquid photosensitive adhesive is applied by a spin coating method, for example, when it is round, the excess liquid sensitivity may be subdivided by = =. After spin coating, it can be removed by washing with a solvent or the like. By performing the removal, it is possible to set *. The same method as in the method of manufacturing the above-described second semiconductor device can be used. In addition, about the edge portion of the semiconductor wafer! '43 201250873. *tzouipif The method of removing the tanning agent may be the same as the method described in the k-method of the first semiconductor device described above. In the present embodiment, the coating film is formed by a liquid photosensitive adhesive = a coating film (sensation), and the activity/line (typically ultraviolet ray) is irradiated by the filament 9 to make the photosensitive property. The layer of the agent is then B-staged to form a ride. Thereby, the (four)th order (four) adhesive egg can be set on the semiconductor wafer 10, and the viscosity of the surface of the adhesive layer is lowered. The semiconductor wafer 4A and the semiconductor wafer 42 with the adhesive layer obtained in this manner are excellent in handleability, and the voids of the bump portion can be sufficiently reduced, and the warpage after grinding can be sufficiently reduced, and the adhesive can be sufficiently The layer has an outcrop most surface layer of bumps. The B-stage of the present embodiment can be performed in the same manner as the B-staged step described in the method of manufacturing the second semiconductor device. In the present embodiment, the liquid layer photosensitive adhesive is applied to each of the outermost layer and the inner layer, and the B layer is formed by light irradiation to form an adhesive layer. However, the liquid layer may be applied a plurality of times. After the photosensitive adhesive, B-staged by light irradiation was performed. Further, in the case where the liquid photosensitive adhesive is applied after the lower layer is B-staged by light irradiation as in the present embodiment, the film thickness is uniform, which is preferable. In addition, the inner layer can be laminated in multiple layers. In the present embodiment, the film thickness (including the total thickness of the outermost layer) of the adhesive layer after exposure is less than the metal bump in terms of connectivity and resin filling properties at the time of pressure bonding. In the case of (for example, FIG. 13), it is preferable that the relationship between the bump height x1 and the thickness y of the adhesive layer satisfies 0.85x1-y-1.2x1, and preferably the thickness of the inner layer with the adhesive layer (ie, 44 201250873) The relationship of 4260 lpif from the thickness of the adhesive layer minus the thickness of the outermost layer) yl satisfies 0.8x1 SylS 1.15x1. In the case where there is a solder ball on the metal bump (for example, FIG. 1), it is preferable that the relationship between the metal bump height χ2, the solder bump x3, the thickness y of the adhesive layer, and the thickness yl of the inner layer satisfies x2Syl, 0.85 ( X2+x3 ) 1.2 (x2+x3). (Semiconductor Wafer Bonding Step) After the alignment of the other semiconductor wafers 51 on the semiconductor wafer 10 provided with the adhesive layer including the inner layer 7 and the outermost layer 6, the bonding is performed by heat (FIG. 24) (a)). In the present embodiment, the semiconductor wafer 51 is thermally bonded to the semiconductor wafer 1 and the semiconductor wafer 51 is provided with a bump electrode connected to the metal bump (electrode) 丨 2 of the semiconductor wafer 10 ( Metal bumps 12 and solder balls 14). Further, the semiconductor wafer 51 may be a semiconductor wafer provided with an adhesive layer similarly to the semiconductor wafer 10. The semiconductor wafers are preferably crimped to each other using a wafer crimper via metal bumps of the semiconductor wafer to effect conduction. As a condition for the pressure bonding, as long as the flux component contained in the outermost layer 6 is removed in order to remove the oxide film of the ball sizing, the bonding of the metal electrode and the melting of the bismuth ball can be achieved. There is no problem in the joining, for example, if the temperature is 150T: 40 (TC, pressure is 〇) Mpa 〜 2 〇 Mpa, and the time is about 10 seconds to 2 hours, the above bonding can be achieved. When it is crimped, it must be aligned. Therefore, it is preferable to have visible and transmissive properties. The adhesive layer preferably has a visible light transmittance of 1% or more. If the visible light transmittance is less than 1%%, it is In the wafer crimping machine, the identification mark cannot be recognized, and the alignment operation cannot be performed. In addition, in the relative intensity of the wavelength of the halogen light source and the light guide tube used in Yujing 45 201250873 ^fZOUipif round crimping machine, 550 The nm to 600 nm is the strongest, so the adhesive layer 6 preferably has a visible light transmittance of 555 nm of 10% to 100%, more preferably 18% to 100%, and even more preferably 25% to 100%. A semiconductor wafer laminate 6 〇 can be obtained, the semiconductor The bulk wafer layered body 60 is formed by laminating two semiconductor wafers and 51 by an adhesive layer 8 ((b) in Fig. 24). ^Back grinding step, semiconductor wafer lamination step, rewiring, and Tan Xiqiu The mounting step, the dicing step, and the picking step can be performed by the same methods and conditions as those described in the above-described second semiconductor device manufacturing method (see FIGS. 16 to 20).

可經由如上所述的步驟而製造具備積層有半導 ，造之半導《置。半導齡置的構成及製造方法不;J 疋於以上的實施形態，只要不偏離本發明的主旨則可適 變更。 例如，可視需要而更換上述步驟的順序。另外， 略一部分的步驟。 噌 另外’圖20所示的半導體裝置例如亦可進一步與其 密封ί搭載敎撐構件接合，其後視需要實施打線接合或 涂你t於接著綱形标料，於將錄感紐接著劑 加献厂導體晶圓的電路面上後，藉由對半導體晶圓進行 或二直，液^感光性接著劑的黏度變低，或施加超音波， 3 ;異空腔室内進行減壓，藉此減少凸塊周邊的孔隙。 46 201250873 4260 lpif 對於接著劑層’亦可於B階化及熱壓接後，於l〇〇°c 〜150 C實施5分鐘〜丨2〇分鐘的熱硬化處理。藉由此種熱 硬化處理，可抑制170°c以上的高溫熱歷程步驟所導致的 孔隙或剝離，可獲得高可靠性的半導體裝置。 繼而’對本發明的第4半導體裝置的製造方法加以說 明。本貫施形態的製造方法包括以下步驟。 步驟1 (接著劑層形成步驟）：於形成有金屬凸塊12 的半導體晶圓1G的電路面S1上多次塗佈液狀感光性接著 劑5 ’對該些塗膜（感光性接著劑層）進行曝光，形成具 有2層以上的構造且最表面層含有助焊劑成分的經B階化 的接著劑層（參照圖1〜圖3、圖13及圖23)。藉此可獲 得附有接著劑層的半導體晶圓42 (參照圖23中的（b))。 步驟2 (背面研磨膠帶積層步驟）：於接著劑層上積層 可剝離的膠帶（背面研磨膠帶）3〇 (參照圖25)。 步驟3 (背面研磨步驟）：對半導體晶_ 1〇自與電路 面si為相反_面（背面）S2進行研磨崎半導體晶圓 10磨薄（參照圖26)。 步驟4 (切割膠帶積層步驟）：於半導體晶圓1〇的與 電路面S1為相反侧的面（背面）上積層可剝離的膠帶（切 割膠帶）36。 步驟5 (剝離步驟）：將可剝離的膠帶3〇剝離（參照 圖 27 )。 、 步驟6 (切割步驟）：藉由切割將半導體晶0 10切分 成多個半導體晶片（半導體元件）1〇a(參照圖28)。藉此， 5 47 201250873 可獲得附有接著劑層的半導體元件44。 步驟7 (壓接步驟）：將所拾取的附有接著劑層的半導 體兀件44麗接（安裝）於半導體裝置用 體元件搭載収撐構件）15。 又粉構仵、千等 籍厚二步驟).藉由密封材(未圖示)將所得的 積層體也、封’獲得半導體裝置130。 接著劑層形成步驟可與上述第3半 法同樣地進行。 H㈣ (背面研磨步驟） 使二吏藉由對半導體晶圓進行背面研磨而 η二導體晶圓的與電路面為相反側的面 (^面）進仃研磨而將半導體晶圓磨薄。於該情形時，於 接者劑層上積層可剝離_帶 膠帶30具有基材31及黏著声/帶4)30 &quot;亥 钻者層32。亦可代替該膠帶而使用It is possible to manufacture a semi-conductive material having a layered semi-conducting layer by the steps described above. The configuration and manufacturing method of the semi-conducting age are not limited; the above embodiments can be modified as long as they do not deviate from the gist of the present invention. For example, the order of the above steps can be changed as needed. In addition, a little part of the steps. Further, the semiconductor device shown in FIG. 20 may be further bonded to the sealing member, for example, and may be joined by a truss member, and then it is necessary to perform wire bonding or coating on the stencil. After the circuit surface of the factory conductor wafer, the viscosity of the liquid photosensitive adhesive is lowered or the ultrasonic wave is applied by performing or straightening the semiconductor wafer, and the decompression is performed in the different cavity. The pores around the bump. 46 201250873 4260 lpif The adhesive layer can also be subjected to a thermal hardening treatment at 5 ° C to 150 C for 5 minutes to 2 2 minutes after B-stage and thermocompression bonding. By such a heat hardening treatment, it is possible to suppress pores or peeling due to a high-temperature heat history step of 170 ° C or more, and a highly reliable semiconductor device can be obtained. Next, a method of manufacturing the fourth semiconductor device of the present invention will be described. The manufacturing method of the present embodiment includes the following steps. Step 1 (Adhesive layer forming step): a liquid photosensitive adhesive 5' is applied a plurality of times on the circuit surface S1 of the semiconductor wafer 1G on which the metal bumps 12 are formed (the photosensitive adhesive layer) Exposure is performed to form a B-staged adhesive layer having two or more layers and having the most surface layer containing a flux component (see FIGS. 1 to 3, 13, and 23). Thereby, the semiconductor wafer 42 with the adhesive layer is obtained (refer to (b) in Fig. 23). Step 2 (Step of laminating the back surface of the polishing tape): A peelable tape (back grinding tape) is laminated on the adhesive layer 3 (see Fig. 25). Step 3 (Back grinding step): The semiconductor wafer 10 is thinned (see Fig. 26) from the opposite side (back surface) S2 of the semiconductor crystal. Step 4 (Cleaning tape lamination step): A peelable tape (cutting tape) 36 is laminated on a surface (back surface) of the semiconductor wafer 1 opposite to the circuit surface S1. Step 5 (Peeling step): The peelable tape 3 is peeled off (refer to Fig. 27). Step 6 (Cutting step): The semiconductor crystal 0 10 is divided into a plurality of semiconductor wafers (semiconductor elements) 1a by cutting (see Fig. 28). Thereby, 5 47 201250873 can obtain a semiconductor element 44 with an adhesive layer. Step 7 (Crimping step): The semiconductor element 44 with the adhesive layer picked up is attached (mounted) to the semiconductor device body element mounting member 15 . Further, the powder structure and the thickness of the first layer are two steps. The semiconductor device 130 is obtained by sealing the obtained laminate together by a sealing material (not shown). The subsequent layer formation step can be carried out in the same manner as in the above third method. H (4) (Back Grinding Step) The semiconductor wafer is thinned by back-polishing the semiconductor wafer and etching the surface of the η-conductor wafer opposite to the circuit surface. In this case, a layer of peelable tape tape 30 having a substrate 31 and an adhesive sound/tape 4) 30 &quot;Driller layer 32 is laminated on the carrier layer. Can also be used instead of the tape

3材作ίΓΓ乙烯乙酸乙烯醋共聚物、聚胺酯等柔 軟基材。作為積層可_的㈣W 已預先成㈣職的關方法來進行渺了藉由層宜 1〇μΐη 。右、經薄化的半導體晶圓10的厚度小於10 叫，則谷易產生半導體晶_㈣另—方面，若超過 48 201250873 4260 lpif 15〇μπι’則難以應對半導體裝置的小型化的要求。 (切割步驟） 於半導體晶圓10的與電路面S1為相反側的面（背面） =:?離的膠帶（切割膠帶）36。可剝離的膠帶36 可藉由層豐已預先成形為膜狀的膠帶的方法進行貼附。 繼而，將可剝離的膠帶（背面研磨膠帶）3〇剝離。例 用藉由照射活性光線（典型而言為紫外線）而黏著 性下降，帶，自膠帶3G側進行曝光後，將其剝離。 割線將半導體晶圓1G與接著觸（最表面層6 心L)—併切斷。藉由該切割，將半導體晶圓10切分 ㈣面設有接著劑層（最表㈣6a及内層7a) 、夕個半導體晶片（半導體元件）咖 割膠帶以將整體固定於框架（晶圓^的: 切割刀進仃。如此而獲伽有接轴層的半導體晶 方44 〇 (壓接步驟） ，割後’藉由接合裝置將所切分的半導體晶片i〇a愈 =者拾取，即拾取附有接著劑層的半導體晶片 繼而’將附有接著劑層的半導體元件44麵（安裝） 屬凸塊或電極塾16的半導體裝置用的支撑構件 声的主道凡件搭載用支撐構件）15。如此，將附有接著劑 導體晶片之接著劑層夾在附有接著劑層的半導體晶 支撐i===’藉此可實現半導體晶片與 的接耆及¥通。另外’此時藉由接著劑層的最表 49 201250873 面層來提南金屬接合性。 作為壓接的條件，只要可實現金屬電極的接合、藉由 焊錫球的熔融進行的接合，就沒有問題，例如只要為^度 為150°C〜40(TC、壓力為（UMPa〜2.〇MPa、時間為 〜30秒左右的範圍，則可實現上述接合。 (密封步驟） 藉由密封材將含有半導體晶片10a的積層體密封， 此獲得半導體裝置130。 曰 於本實施形態中，可代替上述壓接步驟中的半導體元 件搭載収賴件，而於半導體晶圓、其他半導體元件或 搭載有半導體元件的基板等上壓細#接_層的半導體 晶片44。 圖30中的（a)為表示附有半導體元件的半導體晶圓 70的一例的圖，該附有半導體元件的半導體晶圓7〇 =於 升&gt;成有金屬凸塊的半導體晶圓58電路面上壓 著劑層的半導體晶片44。圖30中的(b)為圖3接〇有= 中所示的b-b線的剖面圖。 上述附有半導體元件的半導體晶圓可作為半導體裝置 製造用構件而供給。 &amp; 圖31為表示將附有接著劑層的半導體晶片與其他半 導體晶片壓接而製造半導體裝置的方法的一例的圖。於本 實施形態中’如圖31中的⑴所示，將形成有金屬凸塊 12的半導體晶片l〇b的電路面與附有接著劑層的半導體晶 片44的電路面相向配置，並將該等壓接。如此而獲得圖 50 201250873 42601pif 31中的（b)所示的半導體裝置80。 圖32為表示將附有接著劑層的半導體晶片與搭載有 半導體元件的基板壓接而製造半導體裝置的方法的一例的 圖。於本實施形態中，如圖32中的（a)所示，作為搭載 有半導體元件的基板，準備藉由上述方法所得的於半導體 裝置130的半導體晶片的背面上形成有金屬凸塊者。繼 而’於形成有金屬凸塊的半導體晶片l〇b的金屬凸塊形成 面上’將附有接著劑層的半導體晶片44的電路面相向配 置，並將該等壓接。如此，可獲得圖32中的（b)所示的 作為含有多個半導體晶片的積層體的半導體裝置14()。 其次，對本發明的半導體裝置的製造方法中使用的液 狀感光性接著劑加以說明。再者，本發明不限定於使用以 下說明的液狀感光性接著劑的情形。 液狀感光性接著劑只要可藉由光照射而Β階化，則可 無特別限制地使用。例如可列舉：可藉由利用光的自由基 反應、利用光的陰離子反應、利用光的陽離子反應等而^ 階化的類型。藉由光自由基而Β階化的類型例如可列舉含 有放，線聚合性化合物及光自由基起始劑等光起始劑的類 型。藉由光陰離子而Β階化的類型可列舉含有環氧樹脂及 光陰離子產生劑的類型。藉由光陽離子而Β階化的類^例 如可列舉含有環氧樹脂及光陽離子產生劑的類型。就Β階 化所需要的時間或Β階化後的保存穩定性的觀點而言，較 佳為可藉由利用光的自由基反應而Β階化的類型。 於本說明書中，所謂「Β階」，是指硬化反應的中間階 51 201250873 **Z,QUipif 段、即熔融黏度上升的階段。 ^ B階化的接著劑層可藉由加熱而軟化。具體而言， 較佳為經B階化的接著劑層於2〇ΐ〜6〇ΐ的熔融黏度的 最大值（最大熔融黏度）為5〇〇〇Pa.s〜1〇〇()〇〇ρ&amp;·3，就良 好的操作性及拾取性的觀點而言，更佳為1〇〇〇〇 Pa.s〜 lOOpOOPa’s。另外，較佳為經B階化的接著劑層於6〇&lt;&gt;c〜 2〇〇°c的炫融黏度的最小值（最低熔融黏度）為1〇 pa#s〜 30000 Pa*s ’就良好的熱時流動性及連接性的觀點而言， 更佳為 50 Pa.s〜loooo pa.s。 所謂此處的最大熔融黏度或最低熔融黏度，表示使用 黏彈性測定裝置ARES (流變科學F.E. ( Rheometric Scientific F.E.)(股）製造）對以mj/cm2的光量曝光 後的樣品進行測定時，於2(TC〜200Ϊ的熔融黏度的最大 值或最低值。再者，測定板是設定為直徑為8 mm的平行 板，測定條件是設定為以5t/min升溫，測定溫度是設定 為20C〜20〇°c，頻率是設定為1 Hz。 另外較佳為經B階化的接著劑層於25°C的黏著強度 ^(表面黏著力）成為2〇〇 gf以下，就熱壓接時的黏著性的 觀點而言更佳為15Ggf以下，就背面研磨膠帶的剝離性的 觀點而=進而佳為1〇〇gf以下，就減少切割時的附著物的 巧』而σ最佳為5Q gf以下。另外，為了抑制切割時的接 著劑層的剝離等，較佳為表面黏著力為0.1 gf/cm2以上。 於表面黏著力為0.1 gf/em2以下的情料，有容 下問題的傾向故欠佳：於切斜水渗人至接著賴被黏附3 materials are soft substrates such as ethylene vinyl acetate copolymer and polyurethane. As a layered _ (4) W has been pre-formed into the (four) position of the method to carry out the layer by 1〇μΐη. When the thickness of the thinned semiconductor wafer 10 is less than 10, the valley is likely to generate semiconductor crystals. In addition, if it exceeds 48 201250873 4260 lpif 15 〇μπι', it is difficult to cope with the miniaturization of the semiconductor device. (Cutting Step) A tape (cut tape) 36 on the surface (back surface) of the semiconductor wafer 10 opposite to the circuit surface S1. The peelable tape 36 can be attached by laminating a tape which has been previously formed into a film shape. Then, the peelable tape (back grinding tape) was peeled off 3 。. For example, the adhesive is lowered by irradiation with active light (typically ultraviolet light), and the tape is exposed from the tape 3G side and then peeled off. The secant line cuts the semiconductor wafer 1G and the subsequent contact (the outermost layer 6 core L). By the dicing, the semiconductor wafer 10 is divided into four (4) planes with an adhesive layer (the most (4) 6a and the inner layer 7a), and a semiconductor wafer (semiconductor element) is diced to fix the whole to the frame (wafer : The cutting blade advances. Thus, the semiconductor crystal 44 〇 with the aligning layer is obtained (crimping step), and after cutting, the semiconductor wafer i 〇a is picked up by the bonding device, that is, picking up The semiconductor wafer with the adhesive layer and the support member for mounting the main member of the semiconductor device with the adhesive layer on the surface of the semiconductor device 44 with the adhesive layer or the electrode 塾16 . Thus, the adhesive layer with the adhesive conductor wafer is sandwiched by the semiconductor crystal support i ===' with the adhesive layer, whereby the semiconductor wafer can be connected and connected. In addition, at this time, the south metal bondability is extracted by the surface layer of the last layer of the adhesive layer 49 201250873. As a condition for the pressure bonding, there is no problem as long as the metal electrode can be joined and the solder ball is joined by melting. For example, the temperature is 150 ° C to 40 (TC, and the pressure is (UMPa 2 . When the MPa and the time are in the range of about 30 seconds, the bonding can be achieved. (Sealing step) The laminated body including the semiconductor wafer 10a is sealed by a sealing material, thereby obtaining the semiconductor device 130. In this embodiment, it is possible to replace In the semiconductor element in the above-described pressure bonding step, the semiconductor wafer 44 is mounted on the semiconductor wafer, the other semiconductor element, or the substrate on which the semiconductor element is mounted, and the semiconductor wafer 44 is laminated on the semiconductor element. Fig. 30 (a) is A diagram showing an example of a semiconductor wafer 70 with a semiconductor element, a semiconductor wafer with a semiconductor element, and a semiconductor having a metal layer on a circuit surface of a semiconductor wafer 58 having metal bumps The wafer 44. Fig. 30(b) is a cross-sectional view taken along the line bb shown in Fig. 3. The semiconductor wafer with the semiconductor element described above can be supplied as a member for manufacturing a semiconductor device. for A diagram showing an example of a method of manufacturing a semiconductor device by bonding a semiconductor wafer with an adhesive layer to another semiconductor wafer. In the present embodiment, as shown in (1) of FIG. 31, metal bumps 12 are formed. The circuit surface of the semiconductor wafer 10b is disposed opposite to the circuit surface of the semiconductor wafer 44 with the adhesive layer, and is crimped. Thus, the semiconductor device 80 shown in (b) of FIG. 50 201250873 42601pif 31 is obtained. 32 is a view showing an example of a method of manufacturing a semiconductor device by pressing a semiconductor wafer with an adhesive layer and a substrate on which a semiconductor element is mounted, and in the present embodiment, as shown in (a) of FIG. As a substrate on which a semiconductor element is mounted, a metal bump is formed on the back surface of the semiconductor wafer of the semiconductor device 130 obtained by the above method. Then, the metal bump of the semiconductor wafer 10b formed with the metal bump is prepared. On the block forming surface, the circuit faces of the semiconductor wafer 44 with the adhesive layer are disposed to face each other, and these are crimped. Thus, the inclusion of (b) in FIG. 32 can be obtained as a A semiconductor device 14 (a) having a plurality of stacked layers of a semiconductor wafer. Next, a liquid photosensitive adhesive used in the method for producing a semiconductor device of the present invention will be described. Further, the present invention is not limited to the use of the liquid described below. In the case of the photosensitive photosensitive adhesive, the liquid photosensitive adhesive can be used without any particular limitation as long as it can be subjected to light irradiation. For example, it can be used by radical reaction using light or using light. The type of the anion reaction, the cation reaction by light, etc., and the type of the photo-radicalization, which includes a photoinitiator such as a linear polymerizable compound or a photoradical initiator. Types: The type of ruthenium by photoanion can be exemplified by an epoxy resin and a photoanion generator. Examples of the cationization by photocations include a type containing an epoxy resin and a photocation generator. From the viewpoint of the time required for the Β-stage or the storage stability after the gradation, it is preferable to be a type which can be stepped by the radical reaction of light. In the present specification, the term "Β" refers to the intermediate stage of the hardening reaction 51 201250873 **Z, the QUipif section, that is, the stage in which the melt viscosity rises. ^ The B-staged adhesive layer can be softened by heating. Specifically, it is preferable that the maximum value (maximum melt viscosity) of the melt viscosity of the B-staged adhesive layer at 2 〇ΐ to 6 为 is 5 〇〇〇 Pa.s to 1 〇〇 () 〇〇 ρ&·3, in terms of good operability and pick-up, more preferably 1 〇〇〇〇Pa.s~ lOOpOOPa's. Further, it is preferable that the B-staged adhesive layer has a minimum value (minimum melt viscosity) of 6炫&lt;&gt;&gt;c~2〇〇°c of 1〇pa#s to 30000 Pa*s. 'In terms of good thermal mobility and connectivity, it is better to be 50 Pa.s ~loooo pa.s. The maximum melt viscosity or the lowest melt viscosity here means that when a sample exposed by light amount of mj/cm 2 is measured using a viscoelasticity measuring apparatus ARES (manufactured by Rheometric Scientific FE), 2 (maximum or minimum value of the melt viscosity of TC to 200 。. Further, the measuring plate is set to a parallel plate having a diameter of 8 mm, and the measurement condition is set to increase the temperature at 5 t/min, and the measurement temperature is set to 20 C 20 〇°c, the frequency is set to 1 Hz. It is also preferable that the adhesive strength of the B-staged adhesive layer at 25 ° C (surface adhesion) is 2 〇〇 gf or less, and the adhesion at the time of thermocompression bonding From the viewpoint of the properties, it is more preferably 15 Ggf or less, and from the viewpoint of the releasability of the back-grinding tape, and further preferably 1 〇〇 gf or less, the amount of adhesion at the time of dicing is reduced, and σ is preferably 5 or less. Further, in order to suppress peeling of the adhesive layer at the time of dicing, etc., it is preferable that the surface adhesive force is 0.1 gf/cm2 or more. When the surface adhesive force is 0.1 gf/cm2 or less, there is a tendency to accommodate the problem, which is unsatisfactory. : The water is infiltrated into the water and then adhered to it.

52 201250873. *tz,〇uipif 體界門產生曰曰片飛濺，由切割時的附著物導致產生 孔隙或連接不良等。另外，# 口 ；等级屋生 0ΛΛ 2日，士卜右上述25C的表面黏著力超過 200 gf/cm，則有所得的接著劑層於室 變高、操作性變差的傾向。 此處的表面，著力為以如下方式測㈣值。藉由旋塗 字液狀感光性接著劑以B階後的膜厚成為35 _的方式塗 佈於石夕晶11上，對所得的塗膜於饥、空氣下藉由高精度 平行曝光機（ORC製作所製造，「EXM_n72_B 〇〇」（產品 名p以1000 mJ/cm2進行曝光。其後，對於2yc的表面: 黏著強度’使用力世科（Rhesca)公司製造的探針黏性試 驗，，藉由探針直徑為5.1 mm、剝離速度為1〇 mm/s、接 ，荷重為100 gf/cm2、接觸時間為i 8的條件對25。〇的黏 著力測定5次，計算其平均值。 於本發明中，液狀感光性接者劑較佳為含有（A )放 射線聚合性化合物、（B)光起始劑及（c)熱硬化性樹脂。 具有此種構成的接著劑可成為能藉由光照射而B階化的接 著劑。 上述本發明的第3半導體裝置及第4半導體裝置的製 ^方法中的用於形成接著劑層的最表面層的液狀感光性接 ，劑含有助焊劑成分。進而，於本實施形態中，較佳為接 著劑層包含最表面層及内層，形成最表面層的液狀感光性 接著劑含有（A)放射線聚合性化合物、（B)光起始劑及 (F)助焊劑成分，形成内層的液狀感光性接著劑含有（A) 放射線聚合性化合物、（B)光起始劑及（C)熱硬化性樹 2? 53 201250873 脂。具有此種構成的接著劑可成為能藉由光照射而B 的接者劑。 於本實施形態中，較佳為形成最表面層的液狀感光性 接著劑所含的助焊劑成分的含量（質量％)大於形成内層 的液狀感光性接著劑中的助焊劑成分的含量，更佳為來^ 内層的液狀感光性接著劑不含助焊劑成分。 …v 進而，藉由使形成最表面層的液狀感光性接著劑中不 含填料，且使形成内層的液狀感光性接著劑中: 可防止連接時的填料的混入。 真枓， —本實，形態的液狀感光性接著劑較佳為液狀無溶劑型 感光性接著劑，該液狀無溶劑型感光性接著劑於i atm、 25°C為液狀’且溶劑的含量為5質量％以下。上述所謂「無 溶劑型」，是指接著劑中所含有的溶劑量為5質量％二下二 ^述所謂溶劑是指以下有機化合物：不具有放射線聚 5性基或肟酯基、α_胺基苯乙酮、膦氧化物等光反 ， 環氧基、雜織、絲、胺基、酸酐、聽_、^氧 化物、重氮基、咪唾、烷氧基石夕烷等熱反應性基，分子量 為500以下，且於室溫（25ΐ )下為液狀。此種溶劑例如 可歹J舉:二甲基甲醯胺、甲苯、苯、二甲苯、甲基乙基酮、 四氫呋喃、乙基溶纖劑、乙基溶纖劑乙 ― 己酮:乙酸乙酉旨、γ_丁内酉旨及Ν_甲基考轴一等』 藉由使/合劑里成為上述範圍，可藉由光照射來降低黏 光照㈣的操作性提高。進而可抑龍 硬 化時的發泡。52 201250873. *tz, 〇uipif Body boundary gates produce splatter splashes, resulting in voids or poor connections due to attachments during cutting. In addition, when the surface adhesive force of the 25C of the above-mentioned 25C is more than 200 gf/cm, the obtained adhesive layer tends to become higher in the chamber and the workability tends to be deteriorated. The surface here is focused on the value of (four) as follows. The coating liquid-like photosensitive adhesive is applied to the Shi Xijing 11 so that the film thickness after the B-stage becomes 35 _, and the obtained coating film is subjected to a high-precision parallel exposure machine under hunger and air. Manufactured by ORC, "EXM_n72_B 〇〇" (product name p is exposed at 1000 mJ/cm2. Thereafter, for 2yc surface: adhesion strength, using the probe adhesion test manufactured by Rhesca), From the probe diameter of 5.1 mm, the peeling speed of 1 〇 mm / s, the connection, the load of 100 gf / cm2, the contact time of i 8 conditions for 25. The adhesion of 〇 was measured 5 times, and the average value was calculated. In the present invention, the liquid photosensitive developer preferably contains (A) a radiation polymerizable compound, (B) a photoinitiator, and (c) a thermosetting resin. The adhesive having such a structure can be used as a borrowing agent. An adhesive agent which is B-staged by light irradiation. The liquid photosensitive contact agent for forming the outermost layer of the adhesive layer in the third semiconductor device and the fourth semiconductor device manufacturing method of the present invention contains The flux component. Further, in the embodiment, it is preferable that the adhesive layer contains The surface layer and the inner layer, the liquid photosensitive adhesive forming the outermost layer contains (A) a radiation polymerizable compound, (B) a photoinitiator, and (F) a flux component, and the liquid photosensitive adhesive containing the inner layer contains (A) A radiation-polymerizable compound, (B) a photoinitiator, and (C) a thermosetting tree 2: 53 201250873. The adhesive having such a structure can be a carrier which can be B by light irradiation. In the present embodiment, it is preferable that the content (% by mass) of the flux component contained in the liquid photosensitive adhesive forming the outermost layer is larger than the content of the flux component in the liquid photosensitive adhesive forming the inner layer. More preferably, the liquid photosensitive adhesive of the inner layer does not contain a flux component. ...v Further, the liquid photosensitive adhesive which forms the outermost layer does not contain a filler, and the liquid photosensitive layer which forms the inner layer is formed. In the adhesive: it is possible to prevent the incorporation of the filler during the connection. True, the liquid photosensitive adhesive of the form is preferably a liquid solvent-free photosensitive adhesive, and the liquid solvent-free photosensitive property The next agent is liquid at i atm, 25 °C. The content of the solvent is 5% by mass or less. The above-mentioned "solvent-free type" means that the amount of the solvent contained in the adhesive is 5% by mass. The above-mentioned solvent means the following organic compound: no radiation poly5 Or oxime ester group, α-amino acetophenone, phosphine oxide, etc., photoreaction, epoxy group, hetero-woven, silk, amine group, acid anhydride, listener, oxide, diazo, sodium, alkane a thermally reactive group such as oxysteryl oxide having a molecular weight of 500 or less and a liquid state at room temperature (25 Torr). Such a solvent can be, for example, dimethylformamide, toluene, benzene, xylene, or the like. Methyl ethyl ketone, tetrahydrofuran, ethyl cellosolve, ethyl cellosolve hexanone: ethyl acetate, γ _ 酉 酉 Ν Ν 甲基 甲基 甲基 甲基 甲基 甲基 甲基 甲基 甲基 甲基In the above range, the operability of the adhesive light (4) can be lowered by light irradiation. In addition, foaming can be suppressed when the dragon is hardened.

S 54 201250873 4260 lpif (A)放射線聚合性化合物可列舉烯烴類或炔烴類等 具有碳原子間不飽和鍵的化合物。 再者，本發明中所謂放射線，是指電離性放射線或非 電離性放射線，例如可列舉：ArF、KrF等準分子雷射光， 電子束極紫外線、真空紫外光'X射線、離子束或丨射線 或g射線等紫外光。就量產性的觀點而言，放射線可較佳 地使用i射線或g射線等紫外光。 本實施形悲的液狀感光性接著劑較佳為含有以下化合 物作為（A)放射線聚合性化合物：於2rc為液狀且分; 内具有一個碳-碳雙鍵的化合物。於調配有分子内具有兩個 以上的碳-碳雙鍵的化合物的組成物的情形時，有以下傾 向：若經光照射則成為形成有交聯結構的狀態，此後的熱 時不易熔融，另外亦不易表現出黏性’故熱壓接變困難。 相對於此，藉由含有分子内具有一個碳-碳雙鍵的化合物， 可充分獲得熱時流動性，可提高熱壓接性。其中，就能以 低曝光量而B階化的方面而言，較佳為單官能（曱基）丙烯 酸酉旨。 相對於（A)成分總量，上述單官能（甲基)丙烯酸酯的 含量較佳為20質量％〜1〇〇質量％，更佳為4〇質量％〜 1〇〇質量％，最佳為50質量％〜100質量％。藉由將單官 能（甲基)丙烤酸酯的調配量設定為上述範圍，可進一步提 高B階化後與被黏附體的密接性及熱壓接性。 另外’（A)成分除了於25°C為液狀且分子内具有一個 碳-碳雙鍵的化合物以外，亦可進一步調配固態的丙烯酸 5? 55 201250873 酷。該情形的（A)成分的混合純佳為於坑為液狀。 進而，就獲得高水準的熱時流動性的觀點而言，較佳 為於接著劑組成物中單獨含有分子内具有—個碳碳雙鍵 的化合物作為（A)放射線聚合性化合物。再者，於單獨 使用h子内具有一個破-碳雙鍵的化合物的情形時，可使光 照射後所得的聚合物的分子量為數萬以上，可兼具硬化後 的良好，接著性與可靠性。此處，若含有分子内:有兩個 以上的碳-碳雙鍵的化合物，則有以下傾向：形成分子量為 數萬以上的聚合物彼此的網路，熱時的黏著性或流動性下 降。 就上述（B)成分及（c)成分或（F)成分等其他成 分的溶解性的觀點而言，上述⑷成分較佳為坑的黏 度為5000 mPa.s以下，進而就薄膜化的觀點而言，更佳為 3000 mPa.s以下，進而佳為2〇〇〇mPa.s以下，進而就大量 調配固態或尚黏度的熱硬化樹脂而提高接著性的觀點而 言，最佳為1000 mPa.s以下。此處所謂黏度，是指接著劑 所含的（A)成分總體的值，是使用東京計器製造所製造 的EHD型旋轉黏度計，於樣品量為〇 4 mL、3。圓錐的條 件下，於25°C測定的黏度的值。 若（A)成分的上述黏度超過5〇〇〇 mPa#s，則有接著 劑的黏度上升而薄膜化變困難，或難以自塗佈裝置等的喷 嘴噴出的傾向。就防止塗佈時產生針孔或確保耐熱性的觀 點而言’（A)成分於25。(：的黏度較佳為i〇mPa.s以上。 另外，就抑制塗佈時的揮發的觀點而言，上述（A) 56 201250873 42601pif 成分更佳為5%重量減少溫度為12(rc以上，就可抑制於熱 硬化時由於未反應的（A)成分揮發導致產生剝離或孔隙 的方面而言，更佳為150ΐ以上，最佳為18〇ΐ以上。此處 所謂5%重量減少溫度，是指接著劑所含的（A)成分總體 的值，疋對（A )成分使用示差熱-熱重量同時測定裝置（幻工 奈米科技（SIINanoTechnology)製造：TG/DTA63〇〇)，以 l〇°C/min的升溫速度於氮氣流（4〇〇 ml/min)下測定時的 5%重量減少溫度。 另外，就接著劑的低黏度化、抑制塗佈後的表面凹凸 或B階化後的熱時流動性的觀點而言，較佳為以有機化合 物作為主體的材料設計，故上述（A)成分的5%重量減少 溫度較佳為500°C以下。 本實施形態中所使用的（A)成分例如可列舉具有乙 烯性不飽和基的化合物。乙烯性不飽和基可列舉乙烯基、 烯丙基、丙炔基、丁烯基、乙炔基、苯基乙炔基、馬來醯 亞胺基、耐地醯亞胺基、（曱基）丙烯醯基等。就反應性的 觀點而言，（A)成分較佳為含有單官能（甲基)丙烯酸酯。 此處所謂單官能，是指分子内具有一個碳_碳雙鍵，亦可具 有其他官能基。 作為上述單官能（甲基）丙烯酸酯，例如就可使硬化物 憂強韌的方面而言，較佳為含有縮水甘油基的（甲基）丙烯 酸酉曰或甲基丙稀酸-4-經基苯醋或3,5-二甲基_4_經基苄基 丙烯醯胺等含有酚性羥基的（曱基）丙烯酸酯，2曱基丙烯 醯氧基乙基鄰苯二甲酸、2-甲基丙烯醯氧基丙基六氫鄰苯 57 201250873 426Ulpif 二甲酸、2-甲基丙烯醯氧基甲基六氫鄰苯二甲酸等含有缓 基的（曱基）丙烯酸S旨，就可提高对熱性的方面而言，較佳 為苯紛環氧乙烧（Ethylene Oxide，EO)改質（曱基）丙烯酸 酯、苯盼環氧丙烧（Propylene Oxide，PO)改質（曱基）丙 烯酸酯、壬基苯紛EO改質（甲基）丙稀酸酯、壬基苯紛p〇 改質（甲基)丙烯酸酯、（甲基)丙烯酸苯氧基乙酯、苯氧基乙 二醇（甲基)丙烯酸酯、苯氧基二乙二醇（甲基)丙烯酸酯、羥 基乙基化苯基苯紛丙烯酸酯、苯氧基聚乙二醇（甲基)丙晞 酸酯、壬基苯氧基乙二醇（曱基)丙烯酸酯、壬基苯氧基聚 乙一醇（曱基)丙烯酸酯、壬基苯氧基聚丙二醇（曱基）丙烯酸 酯、（曱基）丙烯酸苄酯、鄰苯二甲酸-2-甲基丙烯醯氧基乙 基-2-羥基丙酯、苯基笨酚縮水甘油醚丙烯酸酯等含有芳香 族的（甲基）丙烯酸酯，就可賦予B階化後的密接性或熱硬 化後的接著性的方面而言’較佳為（曱基)丙烯酸_2_羥基_3_ 苯氧基丙酯、〇-苯基笨酚縮水甘油醚（甲基）丙烯酸酯、鄰 苯二甲酸-2-(甲基）丙烯醯氧基_2·羥基丙酯、2-(甲基）丙烯 醯氧基乙基-2-羥基乙基-鄰苯二甲酸、（曱基)丙烯酸_2_羥基 _3·苯氧基丙酯等下述通式（A」）或通式（A_2)所示的含 有羥基的（甲基）丙烯酸酯’丙烯酸-2-(l，2-環己羧基醯亞胺) 乙酯等下述通式（A-3)或通式（Λ-4)所示的含有醯亞胺 基的（甲基）丙烯酸酯，就可使接著劑組成物的黏度變低的 方面而言，可列舉含有異冰片基的（曱基)丙烯酸酯、含有 一裱戊二烯基的（甲基)丙烯酸酯、（甲基)丙烯酸異冰片酯等 作為較佳者。其中，可特佳地使用含有醯亞胺基的（曱基)S 54 201250873 4260 lpif (A) The radiation-polymerizable compound may be a compound having an unsaturated bond between carbon atoms such as an olefin or an alkyne. In the present invention, the term "radiation" refers to ionizing radiation or non-ionizing radiation, and examples thereof include excimer laser light such as ArF and KrF, electron beam extreme ultraviolet light, vacuum ultraviolet light 'X-ray, ion beam or x-ray beam. Or ultraviolet light such as g-rays. From the viewpoint of mass productivity, it is preferable to use ultraviolet light such as i-rays or g-rays for radiation. The liquid photosensitive adhesive of the present embodiment preferably contains the following compound as (A) a radiation polymerizable compound: a compound having a carbon-carbon double bond in 2rc; In the case of a composition in which a compound having two or more carbon-carbon double bonds in the molecule is blended, there is a tendency that a crosslinked structure is formed when irradiated with light, and heat is not easily melted thereafter. It is also not easy to show stickiness', so hot press bonding becomes difficult. On the other hand, by containing a compound having one carbon-carbon double bond in the molecule, the fluidity at the time of heat can be sufficiently obtained, and the thermocompression bonding property can be improved. Among them, a monofunctional (fluorenyl) acrylate is preferable in terms of a B-stage with a low exposure amount. The content of the above monofunctional (meth) acrylate is preferably 20% by mass to 1% by mass, more preferably 4% by mass to 1% by mass, based on the total amount of the component (A). 50% by mass to 100% by mass. By setting the amount of the monofunctional (meth)propionate to be in the above range, the adhesion to the adherend and the thermocompression bonding after the B-stage can be further improved. Further, the '(A) component can be further formulated with a solid acrylic acid in addition to a compound which is liquid at 25 ° C and has a carbon-carbon double bond in the molecule. 5? 55 201250873 Cool. In this case, the mixing of the component (A) is preferably such that the pit is liquid. Further, from the viewpoint of obtaining a high level of hot-time fluidity, it is preferred that the compound having a single carbon-carbon double bond in the molecule is contained in the adhesive composition as (A) a radiation-polymerizable compound. In the case where a compound having one carbon-breaking double bond in h is used alone, the molecular weight of the polymer obtained after light irradiation can be tens of thousands or more, and it is good after curing, and is excellent in adhesion and reliability. Sex. Here, when a compound having two or more carbon-carbon double bonds in the molecule is contained, there is a tendency to form a network of polymers having a molecular weight of tens of thousands or more, and the adhesion or fluidity during heat is lowered. In view of the solubility of the component (B) and the component (c) or the component (F), the component (4) preferably has a viscosity of 5000 mPa·s or less, and further, from the viewpoint of film formation. In other words, it is preferably 3,000 mPa.s or less, and further preferably 2 Å mPa.s or less, and further preferably 1000 mPa from the viewpoint of a large amount of a thermosetting resin having a solid or a good viscosity to improve adhesion. s below. Here, the viscosity refers to the total value of the component (A) contained in the adhesive, and is an EHD type rotational viscometer manufactured by Tokyo Keiki Co., Ltd., and the sample amount is mL 4 mL, 3. The value of the viscosity measured at 25 ° C under conical conditions. When the viscosity of the component (A) exceeds 5 〇〇〇 mPa #s, the viscosity of the adhesive increases, and it becomes difficult to form a film, or it is difficult to eject from a nozzle such as a coating device. The component (A) is at 25 in terms of preventing pinholes from occurring during coating or ensuring heat resistance. The viscosity of (: is preferably i 〇 mPa.s or more. In addition, the (A) 56 201250873 42601 pif component is more preferably 5% by weight and the temperature is 12 (rc or more, from the viewpoint of suppressing volatilization during coating. It is more preferably 150 Å or more, and most preferably 18 Å or more, from the viewpoint of occurrence of peeling or voids due to volatilization of the unreacted component (A) during heat curing. Here, the 5% weight reduction temperature is Refers to the total value of the component (A) contained in the adhesive, and the component (A) is subjected to a differential thermal-thermal weight simultaneous measuring device (manufactured by SIINano Technology: TG/DTA63〇〇) to l〇 The temperature increase rate of °C/min is 5% by weight when measured under a nitrogen gas flow (4 〇〇ml/min). In addition, the low viscosity of the adhesive is suppressed, and the surface unevenness after coating or B-stage is suppressed. From the viewpoint of thermal fluidity, it is preferable to design a material mainly composed of an organic compound. Therefore, the 5% weight loss temperature of the component (A) is preferably 500 ° C or less. The component A) may, for example, be a compound having an ethylenically unsaturated group. Examples of the ethylenically unsaturated group include a vinyl group, an allyl group, a propynyl group, a butenyl group, an ethynyl group, a phenylethynyl group, a maleimine group, a ruthenium imine group, and a (fluorenyl) propylene group. From the viewpoint of reactivity, the component (A) preferably contains a monofunctional (meth) acrylate. The term "monofunctional" as used herein means having one carbon-carbon double bond in the molecule, and may have other As the above-mentioned monofunctional (meth) acrylate, for example, in terms of toughness of the hardened material, a glycidyl group-containing (meth) acrylate or methyl acrylate-4 is preferable. - a phenolic hydroxyl group-containing (mercapto) acrylate such as a phenylacetic acid or a 3,5-dimethyl-4-yl-based benzyl acrylamide, 2 mercapto propylene oxyethyl phthalic acid, 2-Methyl propylene methoxy propyl hexahydro phthalate 57 201250873 426Ulpif Dicarboxylic acid, 2-methyl propylene methoxymethyl hexahydrophthalic acid, etc. It can be improved in terms of heat, preferably Ethylene Oxide (EO) modified (fluorenyl) acrylic acid Ester, benzophenone propylene oxide (Propylene Oxide, PO) modified (mercapto) acrylate, mercapto benzene EO modified (meth) acrylate, decyl benzene ruthenium (methyl Acrylate, phenoxyethyl (meth)acrylate, phenoxyethylene glycol (meth) acrylate, phenoxy diethylene glycol (meth) acrylate, hydroxyethylated phenyl benzene Acrylate, phenoxy polyethylene glycol (meth) propionate, nonylphenoxyethylene (decyl) acrylate, nonylphenoxy poly(ethylene) acrylate, hydrazine Phenoxypolypropylene glycol (mercapto) acrylate, benzyl (meth) acrylate, -2-methyl propylene oxyethyl 2-hydroxypropyl phthalate, phenyl phenol glycidyl ether In the case of an aromatic (meth) acrylate such as an acrylate, the adhesion after B-stage or the adhesion after thermosetting is preferably '(meth)acrylic acid 2_hydroxy_3_ Phenoxypropyl ester, 〇-phenyl phenol glycidyl ether (meth) acrylate, phthalic acid-2-(methyl) propylene oxy 2 hydroxypropyl ester, 2-(A) Alkyloxyethyl-2-hydroxyethyl-phthalic acid, (mercapto)acrylic acid 2-hydroxyl-3 phenoxypropyl ester, or the like (A") or A-2) or a formula (A-3) or a formula (Λ-4) of a hydroxyl group-containing (meth) acrylate '2-(l,2-cyclohexyl carboxy quinone) ethyl ester shown by A_2) In the case of the (meth) acrylate containing a quinone imine group, the (meth) acrylate containing an isobornyl group may be mentioned, and the hydrazine group containing the isobornyl group may be mentioned. A pentadienyl (meth) acrylate, an isobornyl (meth) acrylate or the like is preferred. Among them, it is particularly preferable to use a fluorenylene group containing a fluorenylene group.

S 58 201250873 4260 lpif 丙烯酸酯，立眉 基板等上時的排射可抑制塗佈於半導體晶圓或有機 著性。 斥或針孔，且於硬化後可表現出優異的接S 58 201250873 4260 lpif acrylate, vertical eyebrows Discharge on substrates or the like can be suppressed from being applied to semiconductor wafers or organic properties. Repellent or pinhole, and can show excellent connection after hardening

(A-1)(A-1)

(A-2) 於通式（A-1)及通式（A_2)中，^表示氫原子或曱 基，R3表示一價有機基，心及R4分別表示二價有機基。 就耐熱性的觀點而言’R3難為具有芳香族基 。就耐熱性 的觀點而言，R4較佳為具有芳香族基。(A-2) In the formula (A-1) and the formula (A_2), ? represents a hydrogen atom or a fluorenyl group, R3 represents a monovalent organic group, and the core and R4 each represent a divalent organic group. From the viewpoint of heat resistance, it is difficult for 'R3 to have an aromatic group. From the viewpoint of heat resistance, R4 preferably has an aromatic group.

(A-3) Ο(A-3) Ο

S 59 201250873 420UlpifS 59 201250873 420Ulpif

於通式（A-3)及通式（A-4)中，心表示氫原子或甲 基，R5表示二價有機基，R6、R7、Rs、分別表示碳數為 1〜30的一價烴基，Re及R7亦可分別相互結合而形成環， R8及R_9亦可分別相互結合而形成環。於r6及以及&amp; 及R9形成環的情形時，例如可列舉苯環結構、脂環式結 構。苯環結構及脂環式結構亦可具有羧基、紛性經基、環 氧基等熱硬化性基，另外亦可具有提基等有機基。 上述通式（A-3)及通式（A-4)所示的化合物例如可 利用公知的方法使N-羥基烷基醯亞胺化合物與丙烯酸醋 或丙烯酸酯進行反應而合成，上述N-羥基烧基醯亞胺化合 物是使單官能酸酐與乙醇胺反應而獲得。於該情形時，單 官能酸酐可使用4-苯基乙炔基鄰苯二甲酸酐、鄰苯二曱酸 酐、馬來酸針、破珀酸針、5-降冰片稀-2,3-二竣酸酐、2,5-降冰片二稀-2,3-二叛酸肝、馬來酸肝、偏苯三甲酸針、環 己烧一緩酸針、5-降冰片稀-2,3-二緩酸針、順式-降冰片婦 -内-2,3-二羧酸六氫無水鄰苯二甲酸酐、六氫鄰苯二甲酸 酐、1，2,3,6-四氫鄰苯二曱酸酐、3,4,5,6-四氫鄰苯二甲酸酐 專一羧酸針。N-經基烧基醯亞胺化合物例如可列舉N-輕基 乙基鄰苯二甲醯亞胺及N-羥基乙基琥珀醯亞胺等。In the general formula (A-3) and the general formula (A-4), the core represents a hydrogen atom or a methyl group, R5 represents a divalent organic group, and R6, R7, and Rs each represent a monovalent number of carbon atoms of 1 to 30. The hydrocarbon group, Re and R7, may also be bonded to each other to form a ring, and R8 and R_9 may be bonded to each other to form a ring. In the case where r6 and &, and R9 form a ring, for example, a benzene ring structure or an alicyclic structure can be mentioned. The benzene ring structure and the alicyclic structure may have a thermosetting group such as a carboxyl group, a divalent group or an epoxy group, or may have an organic group such as a tether. The compound represented by the above formula (A-3) and formula (A-4) can be synthesized, for example, by reacting an N-hydroxyalkyl quinone imine compound with acryl vinegar or an acrylate by a known method, and the above N- The hydroxyalkyl ruthenium compound is obtained by reacting a monofunctional acid anhydride with ethanolamine. In this case, the monofunctional acid anhydride may be 4-phenylethynyl phthalic anhydride, phthalic anhydride, maleic acid needle, rosocic acid needle, 5-norbornazole, dilute-2,3-dioxene. Anhydride, 2,5-norborn diuretic-2,3-di-rebel liver, maleic acid liver, trimellitic acid needle, cyclohexanone-salt acid needle, 5-norbornazole dilute-2,3-two Acid-lowering needle, cis-normethantine-intra-2,3-dicarboxylic acid hexahydro anhydrous phthalic anhydride, hexahydrophthalic anhydride, 1,2,3,6-tetrahydroortylene Indane anhydride, 3,4,5,6-tetrahydrophthalic anhydride specific carboxylic acid needle. Examples of the N-based ketone imine compound include N-light ethyl ethyl phthalimide and N-hydroxyethyl succinimide.

S 60 201250873 42601pif 作為上述通式（A-3)及通式（八_4)所示的化人物 就保存穩定性、B階化後的低黏性、B階化後的密^性’ 熱硬化後的耐熱性、接著性、可靠性的觀點而言，可使用 下述通式（A-5)〜通式（A-9)所示的化合物作為較佳者 就低黏度的觀點而言，可使用下述通式（A-5)、通式（’ 〜通式（A-9)所示的化合物作為更佳者。S 60 201250873 42601pif The stability of the person represented by the above formula (A-3) and the formula (eight_4), the low viscosity after the B-stage, and the heat resistance after the B-stage From the viewpoints of heat resistance, adhesion, and reliability after curing, a compound represented by the following formula (A-5) to formula (A-9) can be used as a preferred viewpoint from the viewpoint of low viscosity. Further, a compound represented by the following formula (A-5) or the formula ('-formula (A-9)) can be used as a more preferable one.

CHCH

(A-5)(A-5)

CHCH

(A-7)(A-7)

CHCH

(A-9) m)〜式(a- 9)中，r 1表示氫原子或甲基。 夕，‘、、、單官能（甲基)丙埽酸醋，就B p皆化後與被 =的f接性、硬化後的接著性、耐熱性的觀點而言， = = 、異三聚氰酸基，亞胺基爾基、 工土、 寺佳為分子内具有II亞胺基的單官能（甲基) 201250873 HZOUipif 丙烯酸酯。 於本實施形態的液狀感光性接著劑中，於25〇C為液狀 且於分子内具有一個碳-碳雙鍵的化合物可單獨調配一種 或組合調配兩種以上。 進而’就B階化後的熱壓接性、熱時流動性的觀點而 言’單官能（曱基)丙烯酸酯較佳為將單官能（甲基)丙烯酸酯 聚合所得的聚合物的Tg成為l〇〇°C以下，就b階化的觀點 而5 ’較佳為Tg成為20 C以上。單官能（甲基）丙稀酸酉旨 的聚合物的Tg為對以下積層體使用黏彈性測定裝置（流 變科學F.E.(股）製造，產品名：ARES)測定的-50〇C〜 200°C的tanS波峰溫度，上述積層體為將以下組成物以膜 厚成為35 μηι的方式塗佈於PET (聚對苯二甲酸乙二酯） 膜上，對該塗膜於室溫、空氣下使用高精度平行曝光機 (ORC製作所製造，產品名：EXM-1172-B-oo)以1〇〇〇 mJ/cm2進行曝光，將所得的膜以膜厚成為15〇 μιη的方式 積層而成，上述組成物為於單官能（甲基）丙烯酸酯中使作 為光起始劑的I-379EG (汽巴日本（Ciba Japan )公司製造） 以相對於單官能（甲基）丙烯酸酯而成為3質量％的比例溶 解而成。再者，測定板是使用直徑為8 mm的平行板，測 定條件是設定為升溫速度為5t/min，測定溫度為_5〇ΐ〜 °C、頻率為！ Ηζ。 併旦相對於接著劑組成物總量，（Α)成分的含量較佳為ι〇 貝里％〜95質量％，更佳為2〇質量％〜9〇質量％，最佳 為40質量％〜90質量％。若⑷成分的含量小於ι〇質(A-9) m)~ In the formula (a-9), r 1 represents a hydrogen atom or a methyl group. In the evening, ',,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The cyanate group, the imine keir group, the work soil, and the temple are monofunctional (methyl) 201250873 HZOUipif acrylate having a II imine group in the molecule. In the liquid photosensitive adhesive of the present embodiment, the compound which is liquid at 25 〇C and has one carbon-carbon double bond in the molecule may be used alone or in combination of two or more. Further, 'the monofunctional (fluorenyl) acrylate is preferably a Tg of a polymer obtained by polymerizing a monofunctional (meth) acrylate from the viewpoint of thermocompression bonding after B-stage and fluidity at the time of heat. l 〇〇 ° C or less, from the viewpoint of b-stage, 5 'preferably Tg becomes 20 C or more. The Tg of the monofunctional (meth)acrylic acid-based polymer is -50 ° C to 200 ° measured for the following laminate using a viscoelasticity measuring device (manufactured by Rheology Scientific FE, product name: ARES). The tanS peak temperature of C is applied to a PET (polyethylene terephthalate) film such that the following composition has a film thickness of 35 μm, and the coating film is used at room temperature or in air. The high-precision parallel exposure machine (manufactured by ORC, Ltd., product name: EXM-1172-B-oo) was exposed at 1 μm/cm 2 , and the obtained film was laminated so that the film thickness became 15 μm. In the monofunctional (meth) acrylate, I-379EG (manufactured by Ciba Japan Co., Ltd.) as a photoinitiator was made to be 3% by mass based on the monofunctional (meth) acrylate. The ratio is dissolved. Further, the measuring plate was a parallel plate having a diameter of 8 mm, and the measurement condition was set to a heating rate of 5 t/min, the measurement temperature was _5 〇ΐ ° ° C, and the frequency was! Hey. Further, the content of the (Α) component is preferably from 1 to 95% by mass based on the total amount of the composition of the adhesive, more preferably from 2% by mass to 9% by mass, most preferably 40% by mass. 90% by mass. If the content of component (4) is less than ι 〇

S 62 201250873 4260 lpif ，則有曝光後的表面黏著力變大的傾向，若超過％質 菫〇/◦，則有熱硬化後的接著強度下降的傾向，故欠佳。 作為（B)光起始劑，對波長為365 nm的光的分子吸 光係數就可B階化的方面而言，較佳為1〇〇 ml/g_cm以上， 就可進一步降低曝光後的黏性的方面而言，更佳為2〇〇 ml/g*cm以上’就可進—步減少氧阻礙的方面而言，進而 佳為400 ml/g*cm以上，就能以低曝光量、短時間進行B 階化的方面而言，最佳為1〇〇〇ml/g.cm以上。再者，8階 化所需要的時間較佳為6〇 s以内，就可更高效地製造半導 體裝置的方面而言，更佳為3〇 s以内。上述分子吸光係數 是藉由以下方式而求出：製備樣品的〇〇〇1質量％乙腈溶 液，對該溶液使用分光光度計（日立高科技（mtachi High-Technol〇gies )公司製造，「U 33 i〇」（產品名乃測定 吸光度。 上述（B)成分例如可列舉：丨_羥基環己基苯基酮、 2-羥基-2-甲基-1-苯基-丙烷_丨_酮、1[4(2_羥基乙氧基)苯 基]-2-經基-2-甲基-1-丙烷酮、2_經基小{4_[4 (2羥基-2_ 曱基-丙醯基)-节基]_苯基卜2_甲基_丙烧小_、氧基_苯基_ 乙酸2-[2-氧雜-2-苯基-乙醯氧基_乙氧基]乙酯、苯基乙醛酸 曱醋、2-二甲基胺基_2_(4_甲基_节基嗎琳_4基苯基^ 丁烷-1-酮、2·乙基己基二甲基胺基苯甲酸酯、2_苄基_2_ 一曱基胺基小(4-嗎琳基笨基)_丁酮、2,2-二曱氧基_1，2_ 二苯基乙烷-1-酮、1_羥基_環己基-苯基_酮、2_曱基小(4_(曱 石”(基)本基)-2-嗎琳基丙酮_i、2,4_二乙基嗟®镇酮、2-乙基氧S 62 201250873 4260 lpif tends to increase the surface adhesion after exposure. If it exceeds % 菫〇/◦, the subsequent strength after thermal curing tends to decrease, which is not preferable. As the (B) photoinitiator, the molecular absorption coefficient of light having a wavelength of 365 nm can be further reduced by 1 〇〇 ml/g_cm or more in terms of B-staged light, thereby further reducing the viscosity after exposure. On the other hand, it is more preferably 2 〇〇 ml/g*cm or more, and it is possible to further reduce the oxygen barrier, and further preferably 400 ml/g*cm or more, which can be low in exposure and short. In terms of time B-stage, the optimum is 1 〇〇〇 ml/g.cm or more. Further, the time required for the 8-stage is preferably within 6 s, and it is more preferably within 3 s in terms of more efficient fabrication of the semiconductor device. The above molecular absorption coefficient was determined by preparing a 〇〇〇1% by mass acetonitrile solution of a sample, and using a spectrophotometer (manufactured by Hitachi High-Technol〇gies Co., Ltd., "U 33 I〇" (product name is the measurement of the absorbance. The component (B) is, for example, 丨-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenyl-propane 丨 ketone, 1 [ 4(2-hydroxyethoxy)phenyl]-2-yl-2-methyl-1-propanone, 2-formyl group {4_[4(2hydroxy-2-indolyl-propionyl)-节基]_Phenyl-2-methyl-propane-small _, oxy-phenyl-acetic acid 2-[2-oxa-2-phenyl-ethoxycarbonyl-ethoxy]ethyl ester, benzene Glyoxylic acid bismuth vinegar, 2-dimethylamino 2 _ (4 _ methyl _ jie jielin _ 4 phenyl phenyl butane-1-one, 2 · ethyl hexyl dimethyl benzene benzene Formate, 2_benzyl-2-indoleamine, small (4-morphinyl)-butanone, 2,2-dimethoxyl-1,2-diphenylethane-1-one , 1_hydroxy-cyclohexyl-phenyl-ketone, 2_fluorenyl small (4_(aragonite) base)-2-morphinylacetone _i, 2,4_diethylhydrazine® Ketone, 2-ethyl oxygen

S 63 201250873 42tUlpif 酿:菲驅等芳香軸；苯偶醯二f基縮酮等苯偶酿衍生物； 2-(鄰，苯基/4,5、二苯基咪唑二聚物、2&lt;鄰氣苯基&gt;4,5_二 (間甲氧基笨基)咪唑二聚物、2-(鄰氟苯基)-4,5-苯基咪唑二 聚物、2-(鄰T氧基苯基Μ，5·二苯基咪唑二聚物、1(對甲 氧基苯基)-4,5-二苯基咪唑二聚物、2,4-二（對甲氧基苯 基)-5·苯基咪唑二聚物、2 (2,4二甲氧基苯基&gt;4,5二苯基 咪唑二聚物等2,4,5-三唑咪唑二聚物；9-苯基吖啶、丨,7_雙 (9,9-吖啶基)庚烷等吖啶衍生物；雙(2,6_二甲氧基苯曱醯 基)-2,4,4-二甲基_戊基膦氧化物、雙(2,4,6，-三甲基苯甲酿 基)-苯基膦氧化物等雙醯基膦氧化物或具有馬來醯亞胺的 化合物等β該些化合物可單獨使用或組合使用兩種以上。 古对空氣環境下（氧存在下）中亦可藉由曝光而 的方面而言’⑻光起始劑較佳為分子内具 ΐ 合物。此種化合物並無特別限 疋’ I乂佳為下述通式（Β_ι)所表矛从 及/¾下述诵穴ίΒ 2、 、的，、有肪醋基的化合物 ΐ目^ 式（3)或通式（Β·4)所表示 齡合物。㈣而言，可較佳地使用2_节基 12一-广 1(4嗣嗎？基笨基〜酮·1、2,2_二甲氧基 基丙= 基姆(甲硫基關_2·嗎琳S 63 201250873 42tUlpif Stuffing: aromatic axis such as phenanthrene flood; benzoic derivative such as benzophenanthene bis ketal; 2-(o-, phenyl/4,5, diphenylimidazole dimer, 2&lt; Phenylphenyl group &gt; 4,5-di(m-methoxyphenyl)imidazole dimer, 2-(o-fluorophenyl)-4,5-phenylimidazole dimer, 2-(o-T-oxyl Phenylhydrazine, 5·diphenylimidazole dimer, 1(p-methoxyphenyl)-4,5-diphenylimidazole dimer, 2,4-di(p-methoxyphenyl)- 5·Phenyl imidazole dimer, 2,4,5-triazole imidazole dimer such as 2 (2,4-dimethoxyphenyl) 4,5 diphenylimidazole dimer; 9-phenyl Acridine derivatives such as acridine, anthracene, 7-bis(9,9-acridinyl)heptane; bis(2,6-dimethoxybenzoinyl)-2,4,4-dimethyl a bis-mercaptophosphine oxide such as pentylphosphine oxide, bis(2,4,6,-trimethylbenzylidene)-phenylphosphine oxide or a compound having maleic imine, etc. The compounds may be used singly or in combination of two or more. In the case of exposure to air in the air environment (in the presence of oxygen), the (8) photoinitiator is preferably a compound in the molecule. Compounds are not limited ' I乂佳 is the following formula (Β_ι), and the following acupuncture points ^, ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The intermediate compound is represented by (4), and it is preferred to use a 2-unit group 12-a broad 1 (4 嗣 ? 基 基 笨 〜 ketone ketone 1, 1, 2, 2-dimethoxy propyl = yl M (methylthioguane _2·Minlin

(B-1)(B-1)

S 64 201250873 42601pifS 64 201250873 42601pif

(B-2)(B-2)

OP. CH, (B-4)OP. CH, (B-4)

CH 3 式中 ,j^5l 的烷基或含有芳 1二分別獨立表示氫原子、碳數為1〜7 示碳數為1〜7的、基的有機基，R53&amp; R54及R55表 及π表示含有芳基的有機基，π 蔡基上制：如:列舉苯基; 甲：卜:芳香f系烴基基，苯 B)s起始劑，特佳為以下化合物：具有 =日基及/或嗎琳環，並且對波長為365 nm的光的分子吸 光係數為i_ml/g.cm以上，且5%重量減少溫度為 以上的化合物。 .5 65 201250873 426Ulpif 此種（B)光起始劑例如可列舉下述構造式（B-5)〜 構造式（B-9)所表示的化合物。In the formula CH 3 , the alkyl group of j^5l or the organic group containing aryl 1 2 each independently represents a hydrogen atom and having a carbon number of 1 to 7 and having a carbon number of 1 to 7, R 53 &amp; R 54 and R 55 and π Represents an organic group containing an aryl group, which is prepared on the π-based group: for example, a phenyl group; a: a: an aromatic f-based hydrocarbon group, a benzene B)s initiator, particularly preferably the following compound: having = ketone and / Or a compound having a molecular absorption coefficient of light having a wavelength of 365 nm of i_ml/g.cm or more and a 5% weight loss temperature of the above. .5 65 201250873 426Ulpif The (B) photoinitiator may, for example, be a compound represented by the following structural formula (B-5) to structural formula (B-9).

QQ

NN

0 CH2 rH 丨| I 2 /CH3 c—c—N ch2ch3CH3 (B-8) o0 CH2 rH 丨| I 2 /CH3 c—c—N ch2ch3CH3 (B-8) o

c—c—N ch2ch3、 (B-9) 1 - ch3 s 66 201250873 42601pif 相對於（A)成分100質量份，⑻光起始劑的含量 較佳為0.!質量份〜20質量份，就b階化的節拍（咖） 或B階化後的黏性的觀點而言，更佳為〇5質量份〜⑺質 量份。若該含量超過20質量份，則有逸氣變多而接著性下 降’或保存穩定性下降的傾向。另—方面，若上述含量小 於0.1質量份，則有B階化變困難的傾向。 於本實施形態的液狀感光性接著劑中，視需要可併用 增感劑。該增感劑例如可列舉：樟腦醌、苯偶醯、二乙醯、 苯偶醯二甲基縮酮、苯偶醯二乙基縮酮、苯偶醯二(2_曱氧 基乙基)縮酮、4,4'-二甲基苯偶醯_二曱基縮酮、蒽醌、卜 氣蒽酿、2-氯葸酿、1，2-苯并蒽酉昆、ι_經基蒽g昆、i_甲基貧 醌、2-乙基蒽醌、1-溴蒽醌、嗟噸酮、2_異丙基噻噸酮、 2-硝基°塞嘲酮、2-曱基售嘲酮、2,4-二曱基嘆嘲酮、;2 4-二 乙基噻噸酮、2,4-二異丙基噻噸酮、2-氣-7-三氟曱基噻噸 酮、β塞嘲酮-10,10-二氧化物、嘆。頓酮_1〇_氧化物、安息香 曱醚、安息香乙醚、異丙醚、安息香異丁醚、二苯甲酮、 雙(4-二曱基胺基苯基)酮、4,4,雙二乙基胺基二苯曱酮、含 有疊氮基的化合物等。該些化合物可單獨使用或併用兩種 以上。上述增感劑中’就可進一步降低Β階後的黏性的方 面而言’可最佳地使用4,4，-雙二乙基胺基二苯曱酮。 上述（C)熱硬化性樹脂只要為包含藉由熱而引起交 聯反應的反應性化合物的成分，就沒有特別限定，例如可 列舉：環氧樹脂、氰酸酯樹脂、馬來醯亞胺樹脂、烯丙基 67 201250873 Μουχρά 耐地醯亞胺樹脂、酚樹脂'脲樹脂、三聚氰胺樹脂、醇酸 樹脂、丙婦酸系樹脂、不飽和聚醋樹脂、鄰苯二甲酸二稀 丙酯樹脂、石夕酮樹脂、間苯二酴甲酸·樹脂、二甲笨樹脂、 咬喃樹脂、聚胺醋樹脂、綱樹脂、三聚氰酸三晞丙醋樹脂、 聚異氰酸醋樹脂、含有異三聚氰酸三(2-經基乙基）醋的樹 脂、含有偏苯三甲酸三烯丙酯的樹脂、由環戊二締所合成 的熱硬化性樹脂、由芳香族二氰胺的三聚化所得的熱硬化 性樹脂等。其中，就可具有高溫下的優異接著力的方面而 言’較佳為環氧樹脂。再者，熱硬化性樹脂可單獨 組合使用兩種以上。 環氧樹脂較佳為於分子内含有至少2個以上的環氧義 者，就熱壓接性或硬化性、硬化物特性的方面而言，更佳 為苯酚的縮水甘油醚型的環氧樹脂。此種樹脂例如可列 f :雙盼A型（或AD型、s型、？型）的縮水甘油喊、 ，化雙酚A型的縮水甘油醚、環氧乙烷加成物雙酚a型的 縮水甘油醚、環氧丙烷加成物雙酚A型的縮水甘油醚、苯 盼祕清漆__水甘油㈣、甲紛祕清_脂的縮水 雙㉟A祕清漆獅_水甘㈣、萘樹脂的縮 ，甘㈣、3官能型（或4官能型）的縮水甘油越、 的縮水甘_、二聚酸的縮水甘油基酿、$ 胺等的縮水甘油胺、萘樹脂的縮水甘油 胺專該些祕脂可單獨使用或組合使用兩種以上。 ^ 卜就防止電遷移（electromigration )哎p方止+凰 導體電路的腐蝕的瀚朴二丄 ）4丨万止金屬 、觀2而έ，環氧樹脂較佳為使用高純度 68 201250873 高純度品是將作為雜質離子的鹼金屬離子、鹼土金 屬軒、时離子制是氯料或轉喊㈣少至300 ppm以下而成。 (C)熱硬錄雛無論於室訂驗㈣是固態， 均可使用。於餘熱硬錄旨的情形時可度更低， =態熱硬化性樹脂的情形m步降低光照射後的 ^另外’亦可將液狀熱硬化性购旨與固態熱硬化性樹 脂併用。 於使用液狀的熱硬化性樹脂的情形時，其黏度較佳為 i_〇 mPa.s以下，更佳為5_ mPa.s以下義佳為遞 mPa.s以下’最佳為2_ mIVs以下。若黏度超過1〇〇〇〇 m〜s ’則有接著劑組成物的黏度上升，薄膜化變困難的 傾向。此種液狀的熱硬化性樹脂並無特別限定，就接著性、 耐熱性的觀點而言’較佳為環氧樹脂，特別可較佳地使用 3官能型（或4官能型）的縮水甘油胺或雙酚a型（或μ 型、S型、F型）的縮水甘油醚。 於使用固ϋ的熱硬化性翻的情_，例如可溶解於 (Α)成分中而使用。固態熱硬化性樹脂並無特別限定， 就熱壓接性及財的觀點而言，齡為分？量為2_以 下，以1000以下為佳，另外較佳為軟化點為1〇〇。〇以下， 以80Ϊ以下為佳。另外，就接著性、雜性的觀點而言， 較佳為3官能以上的縣樹脂。此種縣樹㈣如可較佳 地使用下述結構的環氧樹脂。 69 201250873c-c-N ch2ch3, (B-9) 1 - ch3 s 66 201250873 42601pif With respect to 100 parts by mass of the component (A), (8) the content of the photoinitiator is preferably 0. parts by mass to 20 parts by mass, The b-staged beat (coffee) or the viscosity after the B-stage is more preferably 5 parts by mass to (7) parts by mass. When the content exceeds 20 parts by mass, there is a tendency that the outgas is increased and the adhesion is lowered or the storage stability is lowered. On the other hand, when the content is less than 0.1 part by mass, the B-stage transformation tends to be difficult. In the liquid photosensitive adhesive of the present embodiment, a sensitizer may be used in combination as needed. Examples of the sensitizer include camphorquinone, benzoin, diethyl hydrazine, benzoin dimethyl ketal, benzoin diethyl ketal, and benzoin bis(2-methoxyethyl). Ketal, 4,4'-dimethylbenzindole-didecyl ketal, anthraquinone, Buqi brewing, 2-chlorinated brewing, 1,2-benzopyrene, ι_经基蒽g Kun, i_methyl barren, 2-ethyl hydrazine, 1-bromo fluorene, xanthone, 2-isopropyl thioxanthone, 2-nitro-pyridone, 2-mercapto Methyl ketone, 2,4-diindenyl ketone, 2 4-diethyl thioxanthone, 2,4-diisopropyl thioxanthone, 2-gas-7-trifluoromethyl thioxanthone , β stopper ketone-10,10-dioxide, sigh. Bentonone-1〇_oxide, benzoin ether, benzoin ethyl ether, diisopropyl ether, benzoin isobutyl ether, benzophenone, bis(4-didecylaminophenyl) ketone, 4,4, bis Ethylaminobenzoquinone, an azide-containing compound, and the like. These compounds may be used alone or in combination of two or more. In the above sensitizer, '4,4,-bisdiethylaminodibenzophenone can be optimally used for the purpose of further reducing the viscosity after the gradation. The (C) thermosetting resin is not particularly limited as long as it is a component containing a reactive compound which causes a crosslinking reaction by heat, and examples thereof include an epoxy resin, a cyanate resin, and a maleimide resin. Allyl 67 201250873 Μουχρά 耐 醯 imine resin, phenol resin 'urea resin, melamine resin, alkyd resin, propylene glycol resin, unsaturated polyester resin, di- propyl phthalate resin, stone Enketone resin, isophthalic acid, resin, dimethyl resin, urethane resin, polyurethane resin, resin, glyceryl cyanurate resin, polyisocyanate resin, heterotrimerization A resin of tris(2-carbylethyl)acetic acid, a resin containing triallyl trimellitate, a thermosetting resin synthesized from cyclopentadienyl, and a trimerization of aromatic dicyanamide The obtained thermosetting resin or the like. Among them, an epoxy resin is preferred in that it has an excellent adhesion at a high temperature. Further, the thermosetting resin may be used alone or in combination of two or more. The epoxy resin preferably contains at least two or more epoxy groups in the molecule, and more preferably a glycidyl ether type epoxy resin in terms of thermocompression bonding, hardenability, and cured properties. . Such a resin can be, for example, a type of glycidol called a type A (or an AD type, an s type, a type), a glycidyl ether of a bisphenol A type, and an ethylene oxide adduct bisphenol a type. Glycidyl ether, propylene oxide adduct bisphenol A type glycidyl ether, benzene anti-myster varnish __ water glycerin (four), A secret _ _ fat shrink double 35A secret lacquer lion _ water Gan (four), naphthalene resin The glycidol, the glycidyl glycoside, the glycidylamine of the dimer acid, the glycidylamine of the amine, the glycidylamine of the naphthalene resin, the glycidylamine of the naphthalene resin, the glycidylamine, the trifunctional (or tetrafunctional) glycidol These secret lipids may be used alone or in combination of two or more. ^ Bu to prevent electromigration (electromigration) 方p square + phoenix conductor circuit corrosion of the simple two 丄 丨 4 million metal, view 2 and έ, epoxy resin is preferably used high purity 68 201250873 high purity products It is formed by using an alkali metal ion as an impurity ion, an alkaline earth metal ox, a time-based ion, or a shunt (four) as little as 300 ppm or less. (C) The hot hard recording can be used regardless of whether the room is verified (4) is solid. In the case of the heat-hardening, the degree of the thermosetting resin may be lowered in the m-step, and the liquid thermosetting property may be used in combination with the solid thermosetting resin. In the case of using a liquid thermosetting resin, the viscosity is preferably i_〇 mPa.s or less, more preferably 5_mPa.s or less, and preferably less than 2_mIVs. When the viscosity exceeds 1 〇〇〇〇 m to s ', the viscosity of the adhesive composition increases, and the film formation tends to be difficult. The liquid thermosetting resin is not particularly limited, and is preferably an epoxy resin from the viewpoint of adhesion and heat resistance, and particularly preferably a trifunctional (or tetrafunctional) glycidol. A glycidyl ether of an amine or bisphenol a type (or μ type, S type, F type). In the case of using a thermosetting refractory, it can be used, for example, in a (Α) component. The solid thermosetting resin is not particularly limited, and is the age of the viewpoint of thermocompression bonding and wealth? The amount is preferably 2 or less, preferably 1,000 or less, and further preferably 1 to a softening point. 〇 Below, it is better to be 80 Ϊ or less. Further, from the viewpoint of adhesion and hybridity, a county functional resin having three or more functional groups is preferable. Such a county tree (4) can preferably use an epoxy resin having the following structure. 69 201250873

〇〆 ch2-&lt;? ch2^9 9&gt;^CHz^0〇〆 ch2-&lt;? ch2^9 9&gt;^CHz^0

丨-0~crCH2〜o n表示0〜10的整數。 另外，（C)熱硬化性樹脂較佳為5%重量減少溫度為 150°C以上’更佳為180°C以上’進而佳為200。(：以上。此 處所謂熱硬化性樹脂的5%重量減少溫度，是指對熱硬化 性樹脂使用示差熱-熱重量同時測定裝置（sn奈米科技製 造.TG/DTA6300)’以l(Tc/min的升溫速度於氮氣流（4〇〇 ml/min):測定時的5%重量減少溫度。藉由應用5%重量 減少溫度尚的熱硬化性樹脂’可抑制於熱壓接或熱硬化時 揮發。具有此種耐熱性的熱硬化性樹脂可列舉分子内且有 芳香族基的環氧樹脂。 〃 (C)熱硬化性樹脂的 就兼顧保存穩定性與 相對於（A)成分100質量份， 含量較佳為1質量份〜1〇〇質量份， 201250873 4260 lpif B階化的觀點而言，更佳為2質量份〜5〇質量份。若該含 星超過100質量份’則有曝光後的黏性上升的傾向。另一 方面，若上述含量小於2質量份，則有無法獲得充分的高 溫接著性的傾向。 於本貫施形怨的液狀感光性接著劑中，較佳為更含有 硬化促進劑。硬化促進劑只要為藉由加熱而促進環氧^脂 的硬化/聚合的化合物，就沒有特別限 系化合物、脂肪族胺、脂環族胺、芳香族多J胺二胺紛 脂肪族酸if、脂環族酸針、芳香族酸肝、二氰二_、有 機酉文一轉.、二氟化棚胺錯合物、咪销、二氰二酿胺衍 生物、一羧酸二醯肼、三苯基膦、四笨基鱗四苯基硼酸鹽、 tt4-甲基味唾-四苯基硼酸酉旨、认二氮雜雙環[5A〇] 2烯-7-四笨基鑛醋、三級胺等。該些化合物中，就不 轉性' 分散㈣觀點而言可較佳地使用 於環氧樹月旨100質量份，硬化促進_含量 :生I:二1 量份〜5〇質量份。另外’就接著性、耐熱 陡保耗疋性的觀點而言，亦特佳為味唾類。丨-0~crCH2~o n represents an integer from 0 to 10. Further, the (C) thermosetting resin preferably has a 5% weight loss temperature of 150 ° C or more and more preferably 180 ° C or more and further preferably 200. (The above. The 5% weight reduction temperature of the thermosetting resin herein means that the thermosetting resin is subjected to a differential heat-heat weight simultaneous measuring device (sn nanotechnology manufacturing. TG/DTA6300)' to 1 (Tc). The heating rate of /min is in a nitrogen gas flow (4 〇〇ml/min): 5% weight loss temperature at the time of measurement. By using a 5% weight reduction temperature, the thermosetting resin can be inhibited from thermocompression or thermal hardening. The thermosetting resin having such heat resistance is exemplified by an epoxy resin having an aromatic group in the molecule. 〃 (C) The thermosetting resin has both storage stability and 100 mass relative to (A) component. The content is preferably 1 part by mass to 1 part by mass, and 201250873 4260 lpif is more preferably 2 parts by mass to 5 parts by mass. If the star contains more than 100 parts by mass, then On the other hand, when the content is less than 2 parts by mass, sufficient high-temperature adhesion tends not to be obtained. Among the liquid photosensitive adhesives which are conventionally applied, it is preferred. In order to further contain a hardening accelerator, the hardening accelerator is only required to A compound which is heated to promote hardening/polymerization of an epoxy resin, and there is no particular restriction compound, an aliphatic amine, an alicyclic amine, an aromatic poly-J-amine diamine, an aliphatic acid if, an alicyclic acid needle, or a fragrance. Family acid liver, dicyandiamide, organic hydrazine, fluorinated cis amine complex, imiprole, dicyandiamide derivative, dicarboxylic acid diterpene, triphenylphosphine, four stupid Base quaternary tetraphenylborate, tt4-methyl-salt-tetraphenylborate, diazabicyclo[5A〇] 2ene-7-tetraphenyl vinegar, tertiary amine, etc. These compounds In terms of non-transferability, the use of the epoxy resin is preferably used in an amount of 100 parts by mass, and the hardening promotion is _content: raw I: two parts by weight to 5 parts by mass. In terms of heat resistance and steepness, it is also particularly good for saliva.

以/ = 為反應起始溫度為5代以上，更佳為8〇°C 故麻組成物的黏度上升而膜厚的控制變困難，因此欠佳。 咪唑類較佳為使用溶解於 、 ^ 用此種咪嗤，可獲得凹凸少的^ j日中的咪°坐°藉由使 〇 的塗佈膜。此種咪唑類並無特 別限疋’可列舉：2_十一燒基咪唾 二甲基…一甲基•坐、心甲基二:1 201250873 HZOUipif 苄基-2-苯基咪唑、1_氰基乙基_2_甲基咪唑、丨_氰基乙基_2_ 乙基-4-曱基咪唑、1-氱基乙基_2_笨基咪唑等。就保存穩定 性、接著性、耐熱性的觀點而言’可特佳地使用丨_苄基 本基米。 另外，咪唑類可使用經粉碎成較佳為平均粒徑為1〇 μπι以下，更佳為8 μπι以下，最佳為5 μιη以下的化合物。 藉由使用此種粒徑的咪唑類，可抑制接著劑的黏度變化， 另外可抑制咪唑類的沈降。另外，於形成薄膜時，可減少 表面的凹凸，藉此可獲得均勻的膜。進而，於硬化時可使 樹脂中的硬化均勻地進行，故可減少逸氣。 另外，就快速硬化性及保存穩定性的觀點而言，本實 施形態的液狀感光性接著劑亦可含有微膠囊型硬化劑。 另外，本實施形癌的液狀感光性接著劑亦可含有酸系 化合物作為硬化劑。酚系化合物更佳為分子中呈有至少2 個以上的雜羥基的_化合物。此種化合物例如可列 舉：苯，祕清漆、甲酴祕清漆、第三丁基苯龄祕清 漆、二環戊二烯甲崎酸清漆、二環戊二婦苯齡祕清漆、 二甲苯改質雜祕清漆、萘_化合物、三苯驗系化合 物、四苯轉料漆、細Α祕清漆、料乙烯基苯紛、 苯紛芳絲韻等。該魏合财，難為數量平均分子 圍内者。藉此’可於半導體裝置組裝 加熱時’，制*致半導體元件或裝置等的污染的加熱時的 =苯=:合=佳為液狀’可合適地使用烯丙基 改貝本崎H其原目在於其為餘且耐熱性高。The initial temperature of the reaction is 5 generations or more, and more preferably 8 〇 ° C. Therefore, the viscosity of the composition of the hemp increases and the control of the film thickness becomes difficult, which is not preferable. The imidazole is preferably a coating film obtained by dissolving and using the same, and obtaining a small amount of irregularities. There is no particular limitation on such imidazoles. [Equipped as follows: 2_11-pyranyl-sodium dimethyl dimethyl-methyl-sodium sulphate, sulphate methyl 2:1 201250873 HZOUipif benzyl-2-phenylimidazole, 1_ Cyanoethyl 2 -methylimidazole, hydrazine - cyanoethyl 2 - ethyl-4-mercaptoimidazole, 1-mercaptoethyl 2 -phenylimidazole, and the like. From the viewpoints of storage stability, adhesion, and heat resistance, 丨-benzyl benzyl can be particularly preferably used. Further, as the imidazole, a compound which is preferably pulverized to have an average particle diameter of 1 μm or less, more preferably 8 μm or less, and most preferably 5 μm or less can be used. By using an imidazole of such a particle size, the viscosity change of the adhesive can be suppressed, and the sedimentation of the imidazole can be suppressed. Further, when the film is formed, the unevenness of the surface can be reduced, whereby a uniform film can be obtained. Further, since hardening in the resin can be performed uniformly during curing, outgas can be reduced. Further, the liquid photosensitive adhesive of the present embodiment may contain a microcapsule-type curing agent from the viewpoint of rapid curability and storage stability. Further, the liquid photosensitive adhesive of the present invention may contain an acid compound as a curing agent. The phenolic compound is more preferably a compound having at least two or more heterohydroxy groups in the molecule. Examples of such a compound include benzene, secret varnish, formazan varnish, t-butyl benzoate varnish, dicyclopentadiene akisaki varnish, dicyclopentanyl benzoate varnish, and xylene modified styrene. Secret varnish, naphthalene _ compound, triphenyl test compound, tetraphenyl transfer paint, fine enamel varnish, vinyl benzene, benzene, and silk. The Wei Hecai is difficult for the average number of people. In this case, when the semiconductor device is assembled and heated, the heating of the semiconductor element or the device is reduced. Benzene=: combination=preferably liquid-like, and the allyl group can be suitably used. The original purpose is that it is high and heat resistance is high.

S 72 201250873 42601pif 相對於熱硬化性樹脂100質量份，酚系化合物的含量 較佳為50質量份〜100質量份，更佳為6〇質量份〜95 量份。 本貫施升&gt; 恝的液狀感光性接著劑可更含有（D)熱自 由基產生劑。就保翻蚊性及反應性的觀點而言，熱自、由 基產生劑較佳為有機過氧化物。有機過氧化物較佳為一分 鐘半生期溫度為80X：以上，更佳為10(rc以上，最佳為 120°C以上。有機過氧化物是考慮接著劑組成物的製備條 件、製膜溫度、壓接及硬化條件、其他製程條件、儲存穩 定性等而選擇。可使用的過I化物並無制限定，例如可 列舉.2,5-二甲基-2,5-二（第三丁基過氧化己烷）、過氧化二 異丙苯、過氧化-2-乙基己酸第三丁酯、過氧化乙基己酸 第三己酯、1，1-雙（第三丁基過氧化&gt;3,3,5_三甲基環己烷、 i，l-雙(第二己基過氧化)_3,3,5_三曱基環己烧、過氧化二碳 酸雙(4-第三丁基環己基)酯等，可單獨使用該些化合物中 的種或k合使用兩種以上。猎由含有上述有機過氧化 物，可使曝光後殘存的未反應的放射線聚合性化合物反 應’可實現低逸氣化、高接著化。 一分鐘半生期溫度為80°C以上的熱自由基產生劑例 如可列舉：Peroxa 25B (曰油公司製造）、2,5·二甲基_2,5_ 二（第三丁基過氧化己烷）（一分鐘半生期溫度：)、 Percumyl D (曰油公司製造）、過氧化二異丙苯（一分鐘半 生期溫度：175°C )等。 相對於（A)放射線聚合性化合物總量，（d)熱自由 73 201250873 4 湖 lpif 土生劑的含量較佳為0.01質量％〜20質量％，更佳為 ^質1%〜1G 1量％,最佳為Q5冑量％〜5質量％。 右熱自由基產生劑的含量小於⑽丨I量％ ’則硬化性下 降’添加效果變小，若超過5冑量％，則可見逸氣量增加、 保存穩定性下降。 就提南塗佈後的膜厚岣勻性、B階化後的熱壓接性、 熱硬化後的低應力性、與被軸體的錢性的方面而言， 本實施形態的液狀感光性接著劑亦可更含有（E)熱塑性 樹脂。 (E)成分的Tg較佳為15〇ΐ以下，更佳為12〇。〇以 下，進而佳為100°C以下，最佳為80°c以下。於該Tg超 過150Ϊ的情形時，；^接著劑組成物的黏度上升的傾向。 另外，有熱壓接於被黏附體時需要15〇ΐ以上的高溫，半 導體晶圓容易發生龜曲的傾向。 此處所謂（Ε)成分的「Tg」，是指將（Ε)成分製成 膜時的主分散波峰溫度。具體而言，對（Ε)成分的膜使 用流變（Rheometric )公司製造的黏彈性分析儀「RsΑ_2」 (產品名）’於膜厚為100 μηι、升溫速度為5»c/min、頻率 為1 Hz、測定溫度為-150°C〜300Ϊ的條件下進行測定， 求出Tg附近的tan3波峰溫度作為Tg。 (E)成分的重量平均分子量較佳為控制於5〇〇〇〜 500000的範圍内。進而，就可高度地兼具熱壓接性與高溫 接著性的方面而言，（E)成分的重量平均分子量更^為 10000〜300000。此處所謂「重量平均分子量」，是指使用 74 201250873 42601pif 島津製作所公司製造的高效液相層析儀 「C-R4A」（產品 名）’以聚笨乙烯換算進行測定時的重量平均分子量。 (E)成分例如可列舉：聚酯樹脂、聚醚樹脂、聚醯 亞胺Μ脂、聚醯胺樹脂、聚醯胺醯亞胺樹脂、聚醚醯亞胺 樹脂、聚胺酿樹脂 '聚胺酯醯亞胺樹脂、聚胺酯醯胺醯亞 胺樹脂、矽氧烷聚醯亞胺樹脂、聚酯醯亞胺樹脂、該些樹 脂的共聚物、該些樹脂的前驅物（聚醯胺酸等），此外可列 舉承笨并鳴'σ坐樹脂、笨氧樹脂、聚硪樹脂、聚瞇颯樹脂、 聚苯硫喝脂、雜樹脂、㈣齡、聚碳酸賴脂、聚 賴樹脂、重量平均分子量為i萬〜議萬的（甲基)丙稀酸 系共聚物、酚醛清漆樹脂、酚樹脂等。該些樹脂可單獨使 用-種或組合使用兩種以上。另外，亦可為於該些樹脂的 主鏈及/或側鏈上賦予乙二醇、丙二醇等二醇基、羧基及/ 或經基而成者。 土 相對於（A)成分，熱塑性樹脂的含量較佳為〇工 量％〜5〇質量％，就成膜性或膜厚均勻性、抑制黏·井 的觀點而言，更佳為〇.5質量％〜2G f量％。若執ς 脂的含量小於（U質量％，則有未見添加效果的=，若 超過5〇 f量％’财目轉殘料導致轉 或黏度上升而薄膜化變困難的傾向。 卜降、 於本實施形態的液狀感光性接著劑中，為 的表面的氧化膜加以還原去除而容易地進行金接^錫羊 佳為含有助焊劑劑等（F)助焊劑成分。、’接^ ’較 助焊劑劑較理想為使用選自醇類、 貝酚類、綾酸類中的 75 201250873 &quot;tAUUipif 至少—種化合物。 醇類只要為分子内具有至少2個以上的醇性祕的化 a物’就沒有特別限制，例如可使用：13 一過=、 =二U二轉、m己三醇、1&gt;2,4 丁 士均' 3_甲基戊垸Ά三醇、甘油、三1 ；；、 ΓΓ甲蘚糖醇、季戊四醇、核糖醇、：梨糖：、 ^二ίΤ,其二醇、丙二醇單甲醚、丙二醇單乙鱗、 i乙醇: ，3-己二醇、Ν•丁基二乙醇胺、Ν-乙基 丙醇胺、二=二乙醇胺广雙(2姻乙基)異 又（2_羥基甲基）亞胺基三（羥某甲其、田々 乙醇胺N U ’含有三級㈣子的化合物例如时基二 異丙醇胺ϋ乙=胺i三乙轉胺、ν，ν-雙(2-經基乙基) ν，ν，ν,二基曱基)亞胺基三(經基甲基)甲烧、 ' umv.,(^^)c9(2. 良好的助焊因在於.與其他化合物相比較，顯示 不明確顯示良好的助焊劑活性的詳細理由雖 還原能力rl測其原因在於：由醇性祕所得的氧化膜 子性所得的來源於三級氮原子上的不對稱電子的供電 用，亦原能力—併發揮侧。該些化合物可單獨使 兀了、、且合使用兩種以上。 就沒有特別3具少2個以上的酚性羥基的化合物， m制’例如可列舉：鄰笨二紛、間苯二酚、對S 72 201250873 42601pif The content of the phenolic compound is preferably 50 parts by mass to 100 parts by mass, more preferably 6 parts by mass to 95 parts by mass, per 100 parts by mass of the thermosetting resin. The liquid photosensitive adhesive of the present invention may further contain (D) a thermal radical generating agent. The heat-generating agent is preferably an organic peroxide from the viewpoint of ensuring mosquito resistance and reactivity. The organic peroxide preferably has a one-minute half-life temperature of 80X: or more, more preferably 10 (rc or more, and most preferably 120 ° C or more. The organic peroxide is prepared by considering the preparation conditions of the adhesive composition, and the film forming temperature. And crimping and hardening conditions, other process conditions, storage stability, etc. The over-I compounds that can be used are not limited, and for example, 2,5-dimethyl-2,5-di (t-butyl group) Hexane peroxide), dicumyl peroxide, tert-butyl peroxy-2-ethylhexanoate, third hexyl peroxyethylhexanoate, 1,1-bis (t-butyl peroxidation) &gt;3,3,5_trimethylcyclohexane, i,l-bis(second hexylperoxy)_3,3,5-trimethylcyclohexane, peroxydicarbonate double (4-third Butylcyclohexyl) ester or the like may be used alone or in combination of two or more kinds of these compounds. The unreacted radiation-polymerizable compound remaining after exposure may be reacted by containing the above organic peroxide. A low-gas-producing gas and a high-efficiency. The thermal radical generating agent having a one-minute half-life temperature of 80 ° C or higher can be, for example, Peroxa 25B (manufactured by Oyster Sauce Co., Ltd.). ), 2,5·dimethyl-2,5_di(t-butylperoxyhexane) (one-minute half-life temperature:), Percumyl D (manufactured by Oyster Oil Co., Ltd.), dicumyl peroxide (1) Minute half-life temperature: 175 ° C), etc. Relative to (A) total amount of radiation-polymerizable compound, (d) heat free 73 201250873 4 The content of the lake lpif indigenous agent is preferably 0.01% by mass to 20% by mass, more preferably It is 1%~1G1% by mass, and most preferably Q5胄%~5质量%. The content of the right thermal radical generator is less than (10) 丨I amount% 'The hardenability decreases' The effect of addition becomes small, if it exceeds When the amount is 5%, the amount of outgassing increases and the storage stability is lowered. The film thickness after the coating of the coating, the thermocompression after the B-stage, the low-stress after the thermosetting, and the axis The liquid photosensitive adhesive of the present embodiment may further contain (E) a thermoplastic resin. The Tg of the component (E) is preferably 15 Å or less, more preferably 12 Å. Hereinafter, it is preferably 100 ° C or less, and most preferably 80 ° C or less. When the Tg exceeds 150 Å, the viscosity of the composition of the adhesive is increased. In addition, when a thermocompression bonding to a to-be-adhered body requires a high temperature of 15 〇ΐ or more, the semiconductor wafer tends to be tortuous. The "Tg" of the (Ε) component here means the (Ε) component. The main dispersion peak temperature at the time of film formation. Specifically, the film of the (Ε) component is a rheological analyzer "RsΑ_2" (product name) manufactured by Rheometric Co., Ltd., and the film thickness is 100 μm. The measurement was carried out under the conditions of a speed of 5»c/min, a frequency of 1 Hz, and a measurement temperature of -150 ° C to 300 Torr, and a tan3 peak temperature near Tg was obtained as Tg. The weight average molecular weight of the component (E) is preferably controlled in the range of 5 Å to 500,000. Further, the weight average molecular weight of the component (E) can be more preferably from 10,000 to 300,000 in terms of high thermal pressure bonding property and high temperature conductivity. Here, the "weight average molecular weight" is a weight average molecular weight measured by a high-performance liquid chromatography "C-R4A" (product name) manufactured by Shimadzu Corporation, 74 201250873 42601pif, in terms of polystyrene. Examples of the component (E) include a polyester resin, a polyether resin, a polyimine oxime, a polyamide resin, a polyamide amide resin, a polyether oxime resin, and a polyamine styrene resin urethane oxime. An imide resin, a polyurethane amidoxime resin, a decyl alkene polyimide resin, a polyester quinone imine resin, a copolymer of these resins, a precursor of these resins (polyglycine, etc.), It can be listed as a stupid and sounding 'σ sitting resin, styrene resin, polyfluorene resin, polyfluorene resin, polyphenylene sulfide drink, hetero resin, (four) age, polycarbonate lysate, poly lye resin, weight average molecular weight is i A (meth)acrylic acid copolymer, a novolak resin, a phenol resin, or the like. These resins may be used alone or in combination of two or more. Further, a diol group such as ethylene glycol or propylene glycol, a carboxyl group and/or a warp group may be added to the main chain and/or the side chain of the resins. The content of the thermoplastic resin is preferably from 5% to 5% by mass based on the component (A), and is more preferably 成.5 from the viewpoint of film formability or film thickness uniformity and suppression of sticking and wells. Mass % ~ 2G f amount %. If the content of the fat is less than (U mass%, there is no added effect = if it exceeds 5 〇f%%), the tendency to turn or the viscosity increases, and the film becomes difficult to become thinner. In the liquid photosensitive adhesive of the present embodiment, the oxide film on the surface is reduced and removed, and it is easy to carry out the gold-containing soldering agent (F) flux component, etc. Preferably, the fluxing agent is at least one compound selected from the group consisting of alcohols, phenols, and phthalic acids. The alcohols are at least two or more alcoholic compounds in the molecule. 'There is no particular limitation, for example: 13 one pass =, = two U two turns, m hexane triol, 1 &gt; 2, 4 dins are '3_methyl pentaerythritol, glycerol, three 1;; Steroids, pentaerythritol, ribitol, sorbitol, lysine, diol, propylene glycol monomethyl ether, propylene glycol monoethyl sulphate, i-ethanol:, 3-hexanediol, Ν•butyldiethanolamine , Ν-ethylpropanolamine, bis-diethanolamine, broad bis (2-glycolyl), iso-(2-hydroxymethyl)imide (Hydroxymethane, 々 々 ethanolamine NU 'compound containing a tertiary (tetra) (eg, time base diisopropanolamine ϋ B = amine i triethylamine, ν, ν-bis (2-ylethyl) ν, ν,ν,diylindenyl)imidotris(ylmethyl)carbazide, 'umv.,(^^)c9(2. Good fluxing effect. Compared with other compounds, the display is not clear The detailed reason for showing good flux activity is that the reduction ability rl is determined by the fact that the power supply from the asymmetric electrons of the tertiary nitrogen atom obtained from the oxide film obtained by the alcoholic secret is also the original ability - and These compounds may be used singly or in combination of two or more kinds. There are no compounds having three or more phenolic hydroxyl groups, and m's can be exemplified by: Diphenol, pair

S 76 201250873 42601pif 苯二酚、雙酚、二羥基萘、羥基對苯二酚、鄰苯三酚、次 甲基雙紛（雙酚F)、亞異丙基雙酚（雙酚A)、亞乙基雙 紛（雙盼AD)、1，1，1_三(4_羥基苯基）乙烷、三羥基二苯曱 嗣、三經基苯乙酮、聚對乙烯基苯酚等。進而，具有至少 2個以上的酚性羥基的化合物亦可使用以下的聚縮合物： 選自分子内具有至少1個以上的酚性羥基的化合物中的至 少一種化合物’與選自分子内具有2個鹵代曱基、烷氧基 甲基或.基曱基的芳香族化合物、二乙烯基苯及醛類中的 至少一種化合物的聚縮合物。分子内具有至少1個以上的 盼性經基的化合物例如可列舉：苯酚、烷基苯酚、萘酚、 曱酚、鄰苯二酚、間苯二酚、對苯二酚、雙酚、二羥基萘、 羥基對苯二酚、鄰苯三酚、次甲基雙酚（雙酚F)、亞異丙 基雙紛（雙酚A)、亞乙基雙酚（雙酚AD)、三(4_ 羥基苯基）乙烷、三羥基二苯甲酮、三羥基苯乙酮、聚對乙 烯基苯酚等。另外，分子内具有2個鹵代曱基、烷氧基甲 基或羥基曱基的芳香族化合物例如可列舉：丨，2-雙(氣曱基) 笨、i，3_雙(氯甲基)苯、1,4_雙(氣甲基)苯、1，2_雙（甲氧基 曱基)苯、1，3-雙（曱氧基甲基)苯、L4—雙（甲氧基甲基)苯、 1，2_雙(羥基曱基)苯、153_雙(羥基甲基)笨、14雙(羥基甲 基)苯、雙(氯曱基)聯笨、雙（甲氧基曱基)聯苯等。醛類可 列舉：甲醛（作為其水溶液的福馬林）、三聚甲醛、三噁烷、 六亞甲基四胺等。聚縮合物例如可列舉：作為苯酚與甲醛 的聚縮合物的苯酚酚醛清漆樹脂、作為曱酚與曱醛的聚縮 合物的曱酚酚醛清漆樹脂、作為萘酚類與曱醛的聚縮合物 77 201250873 ^zouipif 的蔡盼祕清雜脂、作為麵與M•雙（T氧基甲 的聚，合物的苯料絲樹脂、雙紛Α與甲_^合 物、本紛與二乙烯基苯的聚縮合物、甲_萘龄甲酸的 聚縮合物等，亦可為對·輯合物進行橡質 或於分子骨架㈣人有胺基三嗪骨㈣二環戊二烯Ϊ架 者=藉由將该些具有齡性經基的化合物加以稀丙基 ^而^液狀者可列舉：烯丙基化苯⑽ π錢η —柄基雙紛二烯丙基雙盼等。該些 化口物可早獨使用，或組合使用兩種以上。 紐、芳香族麟的任—種。脂肪 广美：」萨°、列舉丙二酸、甲基丙二酸、二曱基丙二酸、 -二了二,、_基丙二酸、2,2，_硫代二乙酸、3,3'·硫代S 76 201250873 42601pif benzenediol, bisphenol, dihydroxynaphthalene, hydroxy hydroquinone, pyrogallol, methine bis (bisphenol F), isopropylidene bisphenol (bisphenol A), sub Ethyl double (double expectant AD), 1,1,1_tris(4-hydroxyphenyl)ethane, trihydroxydiphenylhydrazine, tri-propylacetophenone, poly-p-vinylphenol, and the like. Further, the compound having at least two or more phenolic hydroxyl groups may be the following polycondensate: at least one compound selected from the group consisting of at least one or more phenolic hydroxyl groups in the molecule and having 2 selected from the molecule A polycondensate of at least one of a halogenated fluorenyl group, an alkoxymethyl group or a fluorenyl group-containing aromatic compound, divinylbenzene and an aldehyde. Examples of the compound having at least one or more of a desired trans group in the molecule include phenol, alkylphenol, naphthol, indophenol, catechol, resorcin, hydroquinone, bisphenol, and dihydroxyl. Naphthalene, hydroxy hydroquinone, pyrogallol, methine bisphenol (bisphenol F), isopropylidene (bisphenol A), ethylene bisphenol (bisphenol AD), three (4_ Hydroxyphenyl)ethane, trihydroxybenzophenone, trihydroxyacetophenone, polyparavinylphenol, and the like. Further, examples of the aromatic compound having two halogenated fluorenyl groups, alkoxymethyl groups or hydroxy fluorenyl groups in the molecule include fluorene, 2-bis(gas fluorenyl), and i,3 bis (chloromethyl) groups. Benzene, 1,4_bis(gasmethyl)benzene, 1,2-bis(methoxyindenyl)benzene, 1,3-bis(decyloxymethyl)benzene, L4-bis(methoxy) Methyl)benzene, 1,2_bis(hydroxyindenyl)benzene, 153_bis(hydroxymethyl) phenyl, 14 bis(hydroxymethyl)benzene, bis(chloroindenyl) phenyl, bis(methoxy曱 base) biphenyl and the like. The aldehydes may, for example, be formaldehyde (formalin as an aqueous solution thereof), trioxane, trioxane or hexamethylenetetramine. Examples of the polycondensate include a phenol novolak resin which is a polycondensate of phenol and formaldehyde, a nonanol novolak resin which is a polycondensate of indophenol and furfural, and a polycondensate 77 as a naphthol and furfural. 201250873 ^Zouipif's Cai Pan secret clear fat, as a face and M• double (T-oxyl benzene resin, bismuth and a ruthenium complex, bismuth and divinylbenzene a polycondensate, a polycondensate of alpha-naphthoic acid, or the like, or a rubbery or molecular skeleton of the compound (4). Aminotriazine bone (tetra) dicyclopentadiene truss = borrowed Examples of the compound having an age-dependent radical group may be a propyl group and a liquid form: allylated benzene (10) π η η — succinyl bis-diallyl bis, etc. The substance can be used alone or in combination of two or more. New or aromatic argon. The fat is beautiful: "Sa, enumerated malonic acid, methylmalonic acid, dimercaptomalonic acid, - Two, two, _ propyl malonate, 2, 2, _ thiodiacetic acid, 3, 3 ' thio

Tr丨（伸乙基二硫)二乙酸、3,3,_二硫代二丙酸、2_ 乙基_2-經基丁酸、一汰 一 —硫代二甘醇酸、二甘醇酸、乙炔二羧 I夂〆蘋果酸、2·異丙基蘋果酸 、酒石酸、衣康酸、 I ό祕同一綾酸、三鲮酸、己二烯二酸，氫己二烯二酸、 玻ί文、甲基琥56酸、二甲基琥祕 、戊二酸、α-酮基戌 一酉夂一 ^基戊二酸、3_曱基戊二酸、2,2_二甲基戊二酸、 3’3 一:t戊—酸、2,2-雙(羥基曱基)丙酸、檸檬酸、己二 一丁基己二酸、庚二酸、苯基草酸、苯基乙酸、 石t本t乙酸、苯氧基乙酸、硝基苯氧基乙酸、苯基硫代 乙^ 5笨基乙酸、二經基苯基乙酸、爲桃酸、經基扇 桃酉夂、-％基扁桃酸、丁烧四敌酸、辛二酸、4,4，_ 二硫代二丁酸、肉桂酸、硝基肉桂酸 '羥基肉桂酸、二羥Tr丨(extended ethyl disulfide) diacetic acid, 3,3,_dithiodipropionic acid, 2_ethyl 2 -butyric acid, hexa-thioglycolic acid, diglycolic acid , acetylene dicarboxy I 夂〆 malic acid, 2 · isopropyl malic acid, tartaric acid, itaconic acid, I 绫 the same citric acid, triterpenic acid, hexadiene diacid, hydrogen hexadienoic acid, Bac , methyl succinic acid 56, dimethyl succinate, glutaric acid, α-keto oxime 酉夂 ^ glutaric acid, 3 曱 glutaric acid, 2, 2 dimethyl glutar Acid, 3'3 one: t-pentate-acid, 2,2-bis(hydroxyindenyl)propionic acid, citric acid, hexanedibutyl adipate, pimelic acid, phenyl oxalic acid, phenylacetic acid, stone T-t-acetic acid, phenoxyacetic acid, nitrophenoxyacetic acid, phenylthioethyl-5-phenylacetic acid, di-p-phenylacetic acid, citric acid, kiwifruit, and -% amygdal Acid, butadiene, tetrabasic acid, suberic acid, 4,4,_dithiobutyric acid, cinnamic acid, nitrocinnamic acid, hydroxycinnamic acid, dihydroxy

78 S 201250873 42601pif 基肉桂酸、香豆素酸、苯基丙酮酸、羥基苯基丙酮酸、咖 °非酸、南鄰苯二曱酸（homophthalic acid)、曱苯基乙酸、 苯氧基丙酸、羥基苯基丙酸、苄氧基乙酸、苯基乳酸、托 品酸（tropic acid)、3-(苯基磺醯基）丙酸、3,3-四亞曱基戊 二酸、5-氧雜壬二酸、壬二酸、苯基琥珀酸、ι，2_伸苯基二 乙酸、1，3-伸苯基二乙酸、l，4-伸苯基二乙酸、苄基丙二酸、 癸二酸、十二烷二酸、十一烷二酸、二苯基乙酸、节酸、 二環己基乙酸、十四烷二酸、2,2-二苯基丙酸、3,3-二苯基 丙酸、4,4-雙(4-羥基苯基)戊酸、海松酸（pimaric acid)、 長葉松酸（palustric acid)、異海松酸、松香酸、去氫松香 酸、新松香酸、瑪竭酸（agathic acid)等。芳香族致酸例 如可列舉：苯甲酸、2-羥基苯甲酸、3-羥基苯甲酸、4_經 基苯曱酸、2,3-二羥基苯曱酸、2,4-二羥基苯甲酸、2,5_二 羥基苯甲酸、2,6-二羥基苯曱酸、3,4-二羥基笨甲酸、2,3 4_ 二輕基苯曱酸、2,4,6-三經基苯曱酸、3,4,5-三經基笨甲酸、 1，2,3-苯三羧酸、1，2,4-笨三羧酸、1，3,5-苯三羧酸、2_[雙(4_ 羥基苯基）甲基]苯曱酸、1-萘甲酸、2-萘曱酸、u經基_2_ 萘甲酸、2-羥基-1-萘曱酸、3-羥基-2-萘曱酸、6-經基_2_蔡 甲酸、1，4-二羥基-2-萘甲酸、3,5-二羥基-2-萘甲酸、3 7_ 二經基-2-萘甲酸、2,3-萘二叛酸、2,6-萘二緩酸、2_苯氧基 苯曱酸、聯苯-4-羧酸、聯苯-2-羧酸、2-苯曱醯基苯甲酸等。 該些化合物中，就保存穩定性或獲取容易性的觀點而言， 較理想為使用琥珀酸、蘋果酸、衣康酸、2,2_雙(經基甲基) 丙酸、己二酸、3,3，-硫代二丙酸、3,3，-二硫代二丙酸、丨,2,3,4_ 7978 S 201250873 42601pif cinnamic acid, coumarin acid, phenylpyruvate, hydroxyphenylpyruvate, caffeic acid, homophthalic acid, indole phenylacetic acid, phenoxypropionic acid , hydroxyphenylpropionic acid, benzyloxyacetic acid, phenyl lactic acid, tropic acid, 3-(phenylsulfonyl)propionic acid, 3,3-tetradecyl glutaric acid, 5- Oxanic acid, sebacic acid, phenyl succinic acid, iota, 2-phenylene diacetic acid, 1,3-phenylenediacetic acid, 1,4-phenylenediacetic acid, benzylmalonic acid , azelaic acid, dodecanedioic acid, undecanedioic acid, diphenylacetic acid, succinic acid, dicyclohexyl acetic acid, tetradecanedioic acid, 2,2-diphenylpropionic acid, 3,3- Diphenylpropionic acid, 4,4-bis(4-hydroxyphenyl)pentanoic acid, pimaric acid, palustric acid, isopimaric acid, rosin acid, dehydroabietic acid, new Rosin acid, agathic acid, and the like. Examples of the aromatic acid include benzoic acid, 2-hydroxybenzoic acid, 3-hydroxybenzoic acid, 4-phenylbenzoic acid, 2,3-dihydroxybenzoic acid, and 2,4-dihydroxybenzoic acid. 2,5-dihydroxybenzoic acid, 2,6-dihydroxybenzoic acid, 3,4-dihydroxy-benzoic acid, 2,3 4-di-light-benzoic acid, 2,4,6-tri-aminobenzoquinone Acid, 3,4,5-triosylbenzoic acid, 1,2,3-benzenetricarboxylic acid, 1,2,4-polytricarboxylic acid, 1,3,5-benzenetricarboxylic acid, 2_[double (4-hydroxyphenyl)methyl]benzoic acid, 1-naphthoic acid, 2-naphthoic acid, u-based 2_naphthoic acid, 2-hydroxy-1-naphthoic acid, 3-hydroxy-2-naphthoquinone Acid, 6-trans-base_2_carotic acid, 1,4-dihydroxy-2-naphthoic acid, 3,5-dihydroxy-2-naphthoic acid, 3 7-di-diyl-2-naphthoic acid, 2,3 - naphthalene ditoxine, 2,6-naphthalene dibasic acid, 2-phenoxybenzoic acid, biphenyl-4-carboxylic acid, biphenyl-2-carboxylic acid, 2-phenylmercaptobenzoic acid, and the like. Among these compounds, from the viewpoint of storage stability or ease of availability, it is preferred to use succinic acid, malic acid, itaconic acid, 2,2-bis(transmethylmethyl)propionic acid, adipic acid, 3,3,-thiodipropionic acid, 3,3,-dithiodipropionic acid, hydrazine, 2,3,4_ 79

201250873 ^fZDUipiI 丁烧四叛酸、辛二酸、癸二酸、苯基號ίό酸、十二烧二酸、 二苯基乙酸、苄基酸、4,4-雙(4-經基苯基)戊酸、松香酸、 2,5-二羥基苯甲酸、3,4,5-三羥基笨曱酸、l，2,4-苯三緩酸、 I，3,5-苯三羧酸、2_[雙(4_羥基苯基）曱基]苯曱酸等。該些化 合物可單獨使用，亦可組合使用兩種以上。 相對於（Α)成分100質量份’用於形成接著劑層的 最表面層的液狀感光性接著劑中的（F)助焊劑成分的含 量較佳為0.1質量份〜10質量份，更佳為〇 5質量份〜7 5 質量份。若該含量超過10質量份，則有壓接時的孔隙變多 故對可靠性造成不良影響的傾向。另一方面，若上述含量 小於0.1貞H則有助焊劑活性不發揮功能而連接變得 不充分的傾向。 於本實施形態的液狀感光性接著劑中，為了賦予保存 ，定性、製㈣紐或抗氧錄，亦可於残及硬化性的 範圍内進-步添加_、多元賴、苯賴、亞雜醋類、 硫類等的聚合抑制劑或抗氧化劑。 宜人㈣的液狀感光性接著劑中，亦可適 且3有⑹填料。填料例如可列舉：銀粉 録粉等金屬填料，氧化銘、氫氧 二於二 化鋁、锋C 鈣、氧化鎂、氧化鋁、氮 鈦、玻璃、氧化a ^、非晶性二氧切、氮㈣、氧化 士玻璃氧化鐵、陶究等無機 有機填料等，不拘於種類、 二=橡勝系填科等 上诚埴斜·?Γ抽秘 了…、特別限制地使用。 \康所需的功能而區分使用。例如金屬填 201250873 42601pif = = 組成物賦予導電性、導 性、低熱膨脹性、低麟綱辭導熱 以對接著劑層賦作性等為加’有機填料是 :些金屬填料、無機填料或有機填料 或組合使用兩種以上。其中 早職用—種 材料所需求的導電性、導:性就:=體 方面而言，較佳為金屬填料、無#絕緣性等的 填料或絕緣性填料中，接著; 填ST賦予熱時的高接著力的方面而言，更佳2 上述填料較佳為平均粒徑為1〇帅以下 ，以下’更佳為平均粒徑為一以下心 ul目;Γ 4平均_超過10 _或最大粒徑超過ί 、丨有無去充分獲得提南破壞勒性的效果的傾向。另 為πΓ摊徑及最錄㈣下限並無特別關，較佳為均 為0.001 μηι以上。 上述填料的含量是根據要辭的特性或功能而決定， 相對於含有填料的接著劑總量，較佳為5〇質量％以下， ^佳為i質量％〜40質量％’進而佳為3質量％，質 置％。藉由使填料的量增加，可實現低熱膨脹化、低吸满 匕、鬲彈性模數化’可有效地提高切割性（利用切割刀的 切斷性）、熱時的接著強度。若使填料增加至必要量以上， J有黏度上升或熱壓接性受損的傾向，故填料的含量較佳 201250873 ^zouipif 土述轨圍内。為了取得所需求的特性的平衡，玎 /、的填料含量。使用填料的 機、播潰機、三_、球磨鱗;散二 於本實施形態的液狀感光性接著劑中，為了使不同種 ，的材料間的界面結合良好，亦可添加各種偶合劑。偶合 歹Η可列舉;ε夕烧系、鈦系、|呂系等，其中就效果高的方 面而言，·為魏系偶合劑，更佳為具有環氧基等熱硬 化性基或甲基丙烯酸酯及/或丙烯酸酯等放射線聚合性基 的化合物。 上述填料中，就與其他樹脂成分的相溶性、高溫接著 性的觀點而言，適合制二氧化錢料，最佳為使用經環 乳系、丙烯酸酯系、苯系中矽烷偶合劑處理的二氧化矽填 料。 。另外，上述矽烷系偶合劑的沸點及/或分解溫度較佳為 150°C以上，更佳為180。(：以上，進而佳為2〇(rc以上。特 別可最佳地使用以下的妙烧糸偶合劑：具有200。〇以上的 沸點及/或分解溫度，且具有環氧基等熱硬化性基或甲基丙 稀酸S旨及/或丙烯酸醋專放射線聚合性基的碎烧系偶合劑。 ’Ϊ尤效果或耐熱性及成本的方面而言，相對於接著劑 100質量份，上述偶合劑的使用量較佳為設定為001質量 份〜20質量份。 於本實施形態的液狀感光性接著劑中，為了吸附離子 性雜質而使吸濕時的絕緣可靠性良好，亦可更添加離子捕201250873 ^fZDUipiI butyl sulphate, suberic acid, azelaic acid, phenyl phthalic acid, dodecanoic acid, diphenylacetic acid, benzylic acid, 4,4-bis(4-phenylphenyl) Valeric acid, rosin acid, 2,5-dihydroxybenzoic acid, 3,4,5-trihydroxy alum acid, 1,2,4-benzene tribasic acid, I,3,5-benzenetricarboxylic acid, 2_[bis(4-hydroxyphenyl)indenyl]benzoic acid and the like. These compounds may be used singly or in combination of two or more. The content of the (F) flux component in the liquid photosensitive adhesive for forming the outermost layer of the adhesive layer is preferably 0.1 part by mass to 10 parts by mass, more preferably 100 parts by mass of the (Α) component. It is 5 parts by mass to 7.5 parts by mass. When the content is more than 10 parts by mass, the number of pores at the time of pressure bonding increases, which tends to adversely affect reliability. On the other hand, when the content is less than 0.1 贞H, the flux activity does not function and the connection tends to be insufficient. In the liquid photosensitive adhesive of the present embodiment, in order to impart preservation, qualitative, (four) or anti-oxidation recording, it is also possible to further add _, multi-dise, benzo, and sub-in the range of residual and hardenability. A polymerization inhibitor or antioxidant of miscellaneous vinegars, sulfurs, and the like. Among the liquid photosensitive adhesives which are pleasant (4), 3 (6) fillers may be suitable. Examples of the filler include metal fillers such as silver powder recording powder, oxidized, hydrogen oxyhydroxide, aluminum hydride, front C calcium, magnesium oxide, aluminum oxide, titanium nitride, glass, oxidized a^, amorphous dioxometer, and nitrogen. (4), Xingshi glass iron oxide, ceramics and other inorganic and organic fillers, etc., regardless of the type, two = rubber wins, such as the Department of Science and Technology, etc. \Kang the functions required to distinguish. For example, metal filling 201250873 42601pif = = composition imparts conductivity, conductivity, low thermal expansion, low lining heat conduction to the adhesive layer, etc. Adding 'organic fillers are: some metal fillers, inorganic fillers or organic fillers Or use two or more types in combination. Among them, the electrical conductivity and conductivity required for the early-stage materials are: in terms of the body, it is preferably a filler of a metal filler or a non-insulating filler or an insulating filler, and then; In terms of high adhesion, it is preferable that the above filler has an average particle diameter of 1 or less, and the following is more preferably an average particle diameter of one or less; Γ 4 average _ more than 10 _ or maximum Whether the particle size exceeds ί or 丨 has a tendency to fully obtain the effect of the damage of the southern region. The other πΓ and the minimum (4) lower limit are not particularly limited, and are preferably 0.001 μηι or more. The content of the above filler is determined according to the characteristics or function of the character, and is preferably 5% by mass or less based on the total amount of the binder containing the filler, preferably from i% by mass to 40% by mass, and further preferably 3 mass%. %, quality %. By increasing the amount of the filler, it is possible to achieve low thermal expansion, low suction, and elastic modulus, which can effectively improve the cutting property (using the cutting property of the cutting blade) and the bonding strength at the time of heat. If the filler is increased to the necessary amount or more, J has a tendency to increase the viscosity or the thermal crimping property, so the content of the filler is preferably 201250873 ^zouipif. In order to achieve the balance of the required properties, the filler content of 玎 /. In the liquid photosensitive adhesive of the present embodiment, various fillers may be added to the liquid photosensitive adhesive of the present embodiment in order to improve the interface between the materials. Examples of the coupling oxime include an oxime-fired system, a titanium-based system, a lyophilized system, and the like. Among them, in terms of high effect, it is a Wei-based coupling agent, and more preferably has a thermosetting group such as an epoxy group or a methyl group. A compound of a radiation polymerizable group such as an acrylate or/or an acrylate. Among the above-mentioned fillers, from the viewpoint of compatibility with other resin components and high-temperature adhesion, it is suitable for producing a dilute-money material, and it is preferable to use a ring-based emulsion, an acrylate-based or a benzene-based decane coupling agent. Cerium oxide filler. . Further, the boiling point and/or decomposition temperature of the above decane coupling agent is preferably 150 ° C or higher, more preferably 180. (: The above is preferably 2 〇 or more. rc or more. In particular, the following smoldering coupling agent can be optimally used: a boiling point and/or a decomposition temperature of 200 Å or more, and a thermosetting group such as an epoxy group. Or a methacrylic acid S and/or a glycerin-based radiation-polymerizable group of a calcined coupling agent. The above coupling agent is used in an aspect of the effect or heat resistance and cost of 100 parts by mass of the adhesive. In the liquid photosensitive adhesive of the present embodiment, in order to adsorb ionic impurities, the insulation reliability during moisture absorption is good, and ions may be further added. catch

S 82 201250873 4260 lpif 捉劑。此種離子捕捉劑並無特別限制，例如可列舉：三 硫醇化合物、酚系還原劑等作為防止銅變成離子而溶出的 防銅害劑而已知的化合物，粉末狀的鉍系、銻系、鎂系、' 鋁系、锆系、鈣系、鈦系、錫系及該等的混合系等無機化 合物。具體例有東亞合成（股）製造的無機離子捕捉劑， 產品名為IXE-300 (録系）、IXE_5〇〇 (錢系）、ΙχΕ__ (錄 紐混合系）、ΙΧΕ-700 (鎂、鋁混合系）、ΙχΕ_8〇〇 (鍅系）、 ΙΧΕ-1100 (約系）f。該些化合物可單獨使用或混合使用 兩種以上。就添加效果或耐熱性、成本等方面而言，相對 於接著劑100質量份，上述離子捕捉劑的使用量較佳為 0_01質量份〜10質量份。 … 本實施形態的液狀感光性接著劑就提高接著劑的嘴出 性、薄膜化的觀點而言，較佳為25ΐ的黏度為1〇 mPa.s 〜30000 mPa*s ’ 更佳為 30 mPa.s〜20000 mPa.s，就接著 劑的耐熱性或硬化後的接著性、塗佈時的膜厚均勻性的觀 點而言’進而佳為50 mPa.s〜10000 mpa.s，最佳為1〇〇 mPa s 5000 rnPa.s。右上述黏度小於1 〇 mpa.s，則有接著 劑的保存穩定性或耐熱性下降、或塗佈接著劑時容易產生 針孔的傾向。另外，有藉由曝光進行的B階化變困難的傾 向。若上述勒度超過30000 mpa.s，則有塗佈時薄膜化變 困難的傾向或自噴嘴的噴出變困難的傾向。此處所謂黏 度，是指使用東京計器製造所製造的EHD型旋轉黏度計， 於樣品量為0.4 mL、3。圓錐的條件下於25。(：測定的黏度的 值。 5 83 201250873 ^ouipif 本實施形態的液狀感光性接著劑較佳為藉由光照射而 B階化後的接著劑的5%重量減少溫度為i5(rc以上，更佳 為180°C以上，最佳為200。(：以上。若5%重量減少溫度低 於15CTC，則有被黏附體壓接後的熱硬化時或回焊等的熱 歷程時被黏附體剝離的傾向，熱壓接前需要加熱乾燥。另 外，就接著劑的低黏度化、抑制塗佈後的表面凹凸或B階 化後的熱時流動性的觀點而言，較佳為以有機化合物作為 主體的材料設計，故較佳為5%重量減少溫度為500〇Cw 下。為了將5%重量減少溫度設定為此種範圍，較佳為接 著劑所含的溶劑量為5質量％以下，更佳為3質量。/〇以 下，最佳為1質量％以下。 此處所謂5%重量減少溫度是指如以下般測定的值。 藉由旋塗將液狀感光性接著劑以B階後的膜厚成為35 μπι 的方式塗佈於矽晶圓上，對所得的塗膜於25。匸、空氣下藉 由高精度平行曝光機（ORC (股）製作所公司製造，產品 名：EXM-1172-B-oo)以l〇〇〇mJ/cm2進行曝光。其後，對 經B階化的接著劑使用示差熱-熱重量同時測定裝置（sn 奈米科技（股）公司製造，產品名：TG/DTA6300)，以 10 C/min的升溫速度於氮氣流（4〇〇 mi/mjn)下測定5%重 量減少溫度。 本實施形態的液狀感光性接著劑較佳為使用高精度平 行曝光機進行曝光後，於6(TC〜20CTC的最低熔融黏度為 30000 Pa*s 以下。 此處所謂最低熔融黏度，是指對以1000 mJ/cm2的光 84 201250873 42601pif 置進订曝光後的樣品使用轉性測定裝置ares (流變科 學F.E.(股）製造）進行測定時的机〜·。c的溶融黏 度的最低值。再者，败板是設定為直徑為8麵的平行 板’測定條件是設定為,χ 5°C/min升溫，測定溫度是設定 為20C〜300°C，頻率是設定為1 Hz。 上述最低熔融黏度就熱壓接性的觀點而言，更佳為 10000 Pa.s以下，就形成_時可進行鍾接的方面而言 進而佳為5_ Pa.s以下，就能以更低溫度且更短時間進 行熱壓接的方面而言，特佳為3〇〇〇 Pa.s以下。藉由具有 上述範圍内的最低熔融黏度，可確保充分的低溫^接 性，對具有凹凸的基板等亦可賦予良好的密接性。上述最 低熔融黏度的下限值並未特別設定，就賦予操作性或熱時 的黏著性等方面而言，較理想為1〇Pa.s以上。 對於本實施形態的液狀感光性接著劑，關於藉由光照 射進行B階化、進一步進行加熱硬化後的重量減少溫 度，就抑制由熱歷程導致剝離的方面而言較佳為26〇1以 上，就抑制由熱歷程導致的孔隙的方面而言更佳為28〇。〇 以上，就耐吸濕回焊性的觀點而言最佳為3〇〇t5c以上。若 5%重置減少溫度低於26〇°C，則有由回焊步驟等熱歷程導 致產生剝離的傾向。 另外’對於本實施形態的液狀感光性接著劑，關於B 階化後於140。(：於烘箱中加熱1小時、繼而於18〇。〇於烘箱 中加熱3小時之時（加熱硬化時）的逸氣量，就可抑制剝 離的方面而言，較佳為10%以下，就可抑制孔隙的方面而 85 201250873 ^ouipif 5 ’更佳為7%以下，就可進—步抑制由硬化後的熱歷程 導，，孔隙或剝離的方面而言，最佳為5%以下。若上述 逸氣量超過10%’則有加熱硬化時產生孔隙或剝離的傾向。 此處所謂逸氣量是指如以下般測定的值。該值是設定 為以下程式（program)時的重量減少率的值：將液狀感光 性接著劑以B階後的膜厚成為35 μιη的方式塗佈於矽晶圓 上’於所得的塗膜上於室溫下使用手動輥（handr〇Uer)層 疊經脫模處理的PET膜，藉由高精度平行曝光機以麵 mJ/cm2進行曝光。然後，對經B階化的接著劑使用示差埶 -熱重量同時測定裝置，於氮氣流（4〇〇 ml/min)下以 5(TC/mm的升溫速度升溫至14(rc，於14〇。〇保持ι小時， 進而以5(TC/mm的升溫速度升溫至18〇ΐ，於18〇c&gt;c 3小時。 #對於本實施職的餘感紐接著劑，關於將包含該 接著劑的接著劑層形成於被黏附體上並接 階段中的2赃的剪切接著強度，就抑制由熱歷程導致制 離的方面而言，較佳為〇.2廳以上，更佳為〇5服以 上，就耐吸濕回焊性的觀點而言，最佳為1〇Μρ&amp;以上。 另外’上述剪切接著強度較佳為50MPa以下。為了使26〇它 的剪切接著強度為5G MPa以上，必須大量調配執硬化成 分或無機粒子’塗佈後_厚均勻性或接著劑組成物的保 存穩定性受損，另外有熱硬化後的應力增大的傾向。 此處所謂剪切接著強度，是藉由旋塗（例如2咖 rpm/10 s、4000 rpm/20 s)將液狀感光性接著劑以乃μιη的S 82 201250873 4260 lpif catcher. The ion scavenger is not particularly limited, and examples thereof include a trithiol compound, a phenol-based reducing agent, and the like, which are known as a copper-blocking agent which prevents copper from being eluted into ions, and are powdery lanthanides, lanthanides, and An inorganic compound such as a magnesium-based, 'aluminum-based, zirconium-based, calcium-based, titanium-based, tin-based, or such mixed system. Specific examples are inorganic ion scavengers manufactured by East Asia Synthetic Co., Ltd., and the product names are IXE-300 (recorded), IXE_5〇〇 (money), ΙχΕ__ (recorded mixed system), ΙΧΕ-700 (magnesium, aluminum mixed) Department), ΙχΕ_8〇〇 (鍅), ΙΧΕ-1100 (约系) f. These compounds may be used alone or in combination of two or more. The amount of the ion scavenger used is preferably from 0 to 01 parts by mass to 10 parts by mass based on 100 parts by mass of the adhesive agent in terms of the effect of addition, heat resistance, cost, and the like. The liquid photosensitive adhesive of the present embodiment preferably has a viscosity of 25 ΐ from 1 〇 mPa·s to 30000 mPa*s 'more preferably 30 mPa from the viewpoint of improving the mouth-out property and film formation of the adhesive. .s to 20000 mPa.s, from the viewpoint of heat resistance of the adhesive, adhesion after curing, and uniformity of film thickness at the time of coating, and further preferably 50 mPa·s to 10000 mpa·s, preferably 1〇〇mPa s 5000 rnPa.s. When the viscosity of the right side is less than 1 〇 mpa.s, the storage stability or heat resistance of the adhesive is lowered, or pinholes tend to occur when the adhesive is applied. In addition, there is a tendency that the B-stage transformation by exposure becomes difficult. When the above-mentioned degree of elongation exceeds 30,000 mpa.s, there is a tendency that film formation becomes difficult during coating or discharge from a nozzle tends to be difficult. The viscosity herein refers to an EHD type rotational viscometer manufactured by Tokyo Keiki Co., Ltd., and the sample amount is 0.4 mL and 3. The condition of the cone is at 25. (: The value of the measured viscosity. 5 83 201250873 ^ouipif The liquid photosensitive adhesive of the present embodiment is preferably a 5% weight loss temperature of the adhesive which is B-staged by light irradiation, i5 (rc or more, More preferably, it is 180 ° C or more, and the best is 200. (: Above. If the 5% weight reduction temperature is lower than 15 CTC, there is a heat-cured body after being bonded by a bonded body or a heat history such as reflowing. The tendency to peel off is required to be heated and dried before thermocompression bonding, and it is preferable to use an organic compound from the viewpoint of low viscosity of the adhesive, suppression of surface unevenness after coating, and thermal fluidity after B-stage. The material design of the main body is preferably 5% by weight and the temperature is 500 〇 Cw. In order to set the 5% weight loss temperature to such a range, it is preferred that the amount of the solvent contained in the adhesive is 5% by mass or less. More preferably, it is preferably 3 mass% or less. The 5% weight loss temperature here means a value measured as follows. The liquid photosensitive adhesive is applied in a B-stage by spin coating. The film thickness is applied to the germanium wafer in a manner of 35 μm, and the resulting coating is applied. Exposure was carried out at a temperature of 25 匸, under air by a high-precision parallel exposure machine (manufactured by ORC (Stock) Co., Ltd., product name: EXM-1172-B-oo) at 10 μm/cm 2 . The B-staged adhesive was subjected to a differential heat-thermal weight simultaneous measurement device (sn., manufactured by Sn Nanotech Co., Ltd., product name: TG/DTA6300) at a heating rate of 10 C/min in a nitrogen stream (4 〇〇mi). /mjn) 5% weight reduction temperature is measured. The liquid photosensitive adhesive of the present embodiment is preferably exposed to light at a minimum precision of 30,000 to 20 CTC after exposure using a high-precision parallel exposure machine. Here, the minimum melt viscosity is a machine for measuring a sample which is placed at a light exposure of 1000 m 2 /cm 2 and a sample of the light-receiving device is used (manufactured by Rheology Scientific FE). · The lowest value of the melt viscosity of c. Further, the failure plate is set to a parallel plate with a diameter of 8 faces. The measurement condition is set to 升温 5 ° C / min, and the measurement temperature is set to 20 C to 300 ° C. , the frequency is set to 1 Hz. The above minimum melt viscosity is hot crimped In terms of the point, it is more preferably 10000 Pa.s or less, and in terms of the formation of _, it is preferably 5_Pa.s or less, and the aspect of thermocompression bonding can be performed at a lower temperature and in a shorter time. In particular, it is preferably 3 Å Pa.s or less. By having the lowest melt viscosity within the above range, sufficient low-temperature bonding property can be ensured, and good adhesion can be imparted to a substrate having irregularities or the like. The lower limit of the minimum melt viscosity is not particularly set, and it is preferably 1 〇 Pa.s or more in terms of impartability to adhesion during operation or heat. In the liquid photosensitive adhesive of the present embodiment, the weight reduction temperature after B-staged by light irradiation and further heat-hardening is preferably 26 〇 1 or more in terms of suppressing peeling due to thermal history. It is more preferable to suppress the pores caused by the heat history to 28 Å. 〇 The above is preferably 3〇〇t5c or more from the viewpoint of moisture absorption reflow resistance. If the 5% reset reduction temperature is lower than 26 〇 ° C, there is a tendency that peeling occurs due to a heat history such as a reflow step. Further, the liquid photosensitive adhesive of the present embodiment is at 140 after the B-stage. (: heating in an oven for 1 hour, followed by 18 Torr. The amount of outgas when heated in an oven for 3 hours (when heated and hardened) is preferably 10% or less in terms of suppressing peeling. Inhibition of pores and 85 201250873 ^ouipif 5 'More preferably 7% or less, it is possible to further inhibit the thermal history after hardening, and in terms of pores or peeling, it is preferably 5% or less. When the amount of outgas is more than 10%, there is a tendency to cause voids or peeling during heat curing. The amount of outgas is a value measured as follows. This value is a value obtained by setting a weight reduction rate in the following program: The liquid photosensitive adhesive was applied onto a ruthenium wafer so that the film thickness after the B step was 35 μm. The laminate was applied to the obtained coating film at room temperature using a manual roll (maner roll). The PET film was exposed by a high-precision parallel exposure machine at a surface of mJ/cm 2 . Then, a differential 埶-thermal weight simultaneous measuring device was used for the B-staged adhesive in a nitrogen stream (4 〇〇 ml/min). The temperature is raised to 14 (rc, 14 〇 at the temperature increase rate of TC/mm. After holding for 1 hour, the temperature was raised to 18 Torr at a temperature increase rate of 5 (TC/mm, at 18 〇c &gt; c for 3 hours. # For the adhesive of the present application, the adhesive containing the adhesive was used. The thickness of the shear bond formed by the layer formed on the adherend in the joining stage is inhibited from the thermal history to cause the separation, and is preferably more than 2 halls, more preferably more than 5 coats. From the viewpoint of moisture absorption reflow resistance, it is preferably 1 〇Μ ρ &amp; or more. The above shear strength is preferably 50 MPa or less. In order to make 26 〇 its shear strength is 5 G MPa or more, a large amount is required. When the hardening component or the inorganic particles are blended, the thickness uniformity or the storage stability of the adhesive composition is impaired, and the stress after the heat hardening tends to increase. Here, the shear bond strength is caused by Spin coating (for example, 2 coffee rpm/10 s, 4000 rpm/20 s) to apply a liquid photosensitive adhesive to the film

S 86 201250873 42601pif 厚度塗佈於石夕晶圓上。於所得的塗膜上層疊經脫模處理的 PET膜，藉由高精度平行曝光機（〇Rc製作所製造， 「EXM-1172-B-oo」（商品名））以 1〇〇〇mJ/cm2 進行曝光。 其後二以3 mmx3 mm見方將矽晶圓切出。將所切出的附 有接著劑的石夕晶片載置於預先以5 mmx5 mm見方而切出 的矽晶片上，一面以200 gf進行加壓一面於12〇。匸壓接2 秒釦。其後，於14〇。〇於烘箱中加熱}小時，繼而於18〇。〇 於烘箱中加熱3小時，獲得接著樣品。對所得的樣品使用 剪切接著力試驗機「Dage_4000」（產品名）測定之仞它的 剪切接著力，將其作為剪切接著強度的值。 液狀感光性接著劑較佳為藉由光照射使接著劑層B階 化時，可見光透射率達到10%以上。若可見光透射率小於 10%，則有於覆晶畴n或晶圓壓接機中無法進行識別標 記的識別，無法進行對位作業的傾向。另外，於覆晶固持 器或晶圓壓接機中所使用的鹵素光源與導光管的相對 強度中，550 nm〜600 nm最強，故液狀感光性接著較佳 為555 nm的可見光透射率為10%〜1〇〇%，更佳〜 100% ’進而佳為25%〜100%。 ° 實例 以下，列舉實例對本發明加以更具體說明。然而， 發明不限定於以下的實例。 … 〈貫例1〜實例3的液狀感光性接著劑的製備〉 以下述表1所示的組成比（單位：質量份）調配各 分，獲得實例1〜實例3的液狀感光性接著劑。 87 201250873 4260lpif 實例1的液狀感光性接著劑是藉由以下的順序製備。 首先，於作為放射線聚合性化合物的「M140」及 「AMP_2〇GY」中添加作為環氧樹脂的「1〇32膽」、作為 光起始劑的「I-379EG」及「ΕΑβ」以及作為助焊劑成分的 己二酸’使用6GI的油料行獅、分散。使所得的混合 物回到25C後，添加作為硬化劑# 1B2pz及作為熱自由 基產生劑的Percumyl D，並進行攪拌。 ”、 實例2及實例3的餘感紐接著劑是藉由以下的順 ^備。首先，於作為放射線聚合性化合物的「⑹ AMP-2GGY」巾添加填料成分，並 繼中添加作為環氧樹脂的 己二酸，使用⑽的二=;==!'成分的 物回到2沈後，添加作為硬化促進劑^「黯混合 熱自由基產生_ P⑽myl D，並進倾拌。」及作為S 86 201250873 42601pif Thickness is applied to the Shi Xi wafer. The release-treated PET film was laminated on the obtained coating film, and was manufactured by a high-precision parallel exposure machine ("EXM-1172-B-oo" (trade name) manufactured by 〇Rc Co., Ltd.) at 1 〇〇〇mJ/cm2. Exposure. The second wafer was cut out at 3 mm x 3 mm square. The cut-off etched wafer was placed on a ruthenium wafer cut out in advance on a square of 5 mm x 5 mm, and pressed at 200 gf for 12 Torr. Press and hold for 2 seconds. Thereafter, at 14 〇. Heat in the oven for an hour, then at 18 inches.加热 Heated in an oven for 3 hours to obtain a subsequent sample. The obtained sample was measured for its shearing adhesion force using a shear adhesion tester "Dage_4000" (product name) as a value of the shear strength. The liquid photosensitive adhesive preferably has a visible light transmittance of 10% or more when the adhesive layer is B-staged by light irradiation. When the visible light transmittance is less than 10%, the identification of the identification mark cannot be performed in the flip-chip domain n or the wafer crimping machine, and the alignment operation tends not to be performed. In addition, among the relative intensities of the halogen light source and the light guide tube used in the flip chip holder or the wafer crimping machine, 550 nm to 600 nm is the strongest, so the liquid photosensitive property is preferably the visible light transmittance of 555 nm. It is 10%~1〇〇%, more preferably ~100%' and then preferably 25%~100%. ° Examples Hereinafter, the present invention will be more specifically described by way of examples. However, the invention is not limited to the following examples. (Preparation of Liquid Photosensitive Adhesives of Example 1 to Example 3) Each component was prepared by the composition ratio (unit: parts by mass) shown in Table 1 below, and liquid photosensitive adhesives of Examples 1 to 3 were obtained. . 87 201250873 4260lpif The liquid photosensitive adhesive of Example 1 was prepared by the following procedure. First, "1〇32 gallbladder" as an epoxy resin, "I-379EG" and "ΕΑβ" as a photoinitiator, and "assisted as a photoinitiator" were added to "M140" and "AMP_2〇GY", which are radioactive compounds. The adipic acid of the flux component is lion and dispersed using 6GI oil. After the obtained mixture was returned to 25 C, Percumyl D as a curing agent #1B2pz and a thermal radical generating agent was added and stirred. In the case of the "(6) AMP-2GGY" as a radiation-polymerizable compound, a filler component was added, and the epoxy resin was added as an epoxy resin. The adipic acid, using the (2) two =; ==! 'component back to 2 sinking, added as a hardening accelerator ^ "黯 mixed with hot radicals to produce _ P (10) myl D, and into the mixture."

S 88 201250873 42601pif [表1] 實例1 6(Γ^— 實例3 (A)放射線聚合性化合物 M-140 60 60 AMP-20GY 20 -~~ (B)光起始劑 I-379EG 20 3 ~~~ 3 EAB 3 r— (C)熱硬4匕性樹脂 1032-H60 40 Tr—--- 3 4〇 40 硬化促進劑 1B2PZ 2 r1*···&gt;一 2 2 (D)熱自由基產生劑 Percumyl D 1 —---^ 1 '~ 1 (G)填料 SE1050-SPP ___ 50 X52-7030 --___ (F)助焊劑成分 己二酸 1 50 1 (A)成分的聚合物的Tg (°C) 50 -__ --—^___ 300ΪΓ-- 50 黏度（mPa-s) 1200 接著劑層的膜厚（μπ〇 35 —3ΠΙΙ jUUU 35 形成接著劑層時的凸塊孔隙 A A ~ A 光照射後的黏性（gf) A --· — A 光照射後5%重量減少溫度（°C ) 280 260 磨削後的翹曲 A -^ A 可見光透射性 A A B 連接性 A — 一 A ~~ 於表1中，各記號是指下述物質。 M-140 :東亞合成公司製造，丙烯酸_2-(1,2·環己魏美 醯亞胺）乙酯（含有醯亞胺基的單官能丙烯酸酸，5%重量 減少溫度：200°C，25°C 的黏度：450 mPa.s)。 AMP-20GY :新中村化學工業公司製造，苯氧基二乙 二醇丙烯酸酯（單官能丙烯酸酯，5%重量減少溫度： 175°C，25°C 的黏度：16 mPa.s)。 I-379EG :汽巴日本公司製造，二曱基胺基·2·(4-曱 基-节基)-1-(4-嗎琳-4-基-苯基)-丁烧-1-嗣（5%重量減少溫 度：26(TC，i射線吸光係數：8000 ml/gcm)。 r 89 201250873.S 88 201250873 42601pif [Table 1] Example 1 6 (Γ^—Example 3 (A) Radiation Polymerizable Compound M-140 60 60 AMP-20GY 20 -~~ (B) Photoinitiator I-379EG 20 3 ~~ ~ 3 EAB 3 r— (C) Thermosetting 4-ring resin 1032-H60 40 Tr—-- 3 4〇40 Hardening accelerator 1B2PZ 2 r1*···&gt;-2 2 (D) Thermal radical generation Percumyl D 1 —---^ 1 '~ 1 (G) Filler SE1050-SPP ___ 50 X52-7030 --___ (F) Flux component adipic acid 1 50 1 (A) component of Tg ( °C) 50 -__ ---^___ 300ΪΓ-- 50 Viscosity (mPa-s) 1200 Film thickness of the adhesive layer (μπ〇35 —3ΠΙΙ jUUU 35 Bump pores AA ~ A when forming the adhesive layer Post-viscosity (gf) A --· — A 5% weight reduction temperature after light irradiation (°C) 280 260 Warpage after grinding A -^ A Visible light transmission AAB connectivity A — A ~ ~ In Table 1, each symbol means the following: M-140: Manufactured by Toagosei Co., Ltd., 2-(1,2. cycloheximeimine) ethyl acrylate (monofunctional acrylic acid containing quinone imine group, 5% weight reduction temperature: 200 ° C, 25 ° C Viscosity: 450 mPa.s) AMP-20GY: Manufactured by Xinzhongcun Chemical Industry Co., Ltd., phenoxy diethylene glycol acrylate (monofunctional acrylate, 5% weight loss temperature: 175 ° C, viscosity at 25 ° C: 16 mPa.s). I-379EG: Manufactured by Ciba Japan, dimercaptoamino-2(4-mercapto-nodal)-1-(4-morphin-4-yl-phenyl)- Ding-sinter-1-嗣 (5% weight reduction temperature: 26 (TC, i-ray absorption coefficient: 8000 ml/gcm). r 89 201250873.

~TA«V/V ΕΑΒ :東京化成公司製造，4,4ι_雙二乙基胺基二苯甲 酮。 1032Η60:日本環氧樹脂公司製造，三(羥基苯基)甲烷 型固態環氧樹脂（5%重量減少溫度：35(TC，固態，熔點 為 60°C )。 1B2PZ :四國化成公司製造，^节基·2_苯基咪唑。 Percumyl D :曰油公司製造，過氧化二異丙苯（一分 鐘半生期溫度：175°C)。 SE1050-SPP :日本豐田自動車（Admatechs )公司製 造，苯基矽烧表面處理二氧化矽（平均粒徑：〇.2μιη〜〇3 μπι)。 Χ52-7030 :信越矽酮公司製造，矽酮複合粉末（平均 粒徑：0.8 μιη)。 己二酸：和光純藥工業（股）公司製造。 上述（Α)成分的黏度為使用東京計器製造所製造的 EHD型旋轉黏度計’於樣品量為〇 4 mL、3。圓錐的條件下 於25°C測定的值。 另外，按以下順序來測定對實例1〜實例3中使用的 (A)成分進行光照射所得的聚合物的Tg。 &lt; (A)成分的聚合物的Tg&gt; 於實例1〜實例3的液狀感光性接著劑中所調配的 (A)成分中，以相對於（A)成分而成為3質量％的比例 使I-379EG (汽巴日本公司製造）溶解而獲得組成物，將 所得的組成物以膜厚成為35 μπι的方式塗佈於pET (聚對 201250873 4260 lpif 苯二甲ID膜上’對該麵於坑 精度平行Μ機（QRC製作 ，由同 EXM-1172-B-oo)以 1〇〇〇 τ/ 2 產。口名· 1ςη m進行曝光。將如此而獲得 的膜以膜马·成為15〇 的方式 θ 得的積層體使用黏彈性測定裝“== T=:ARES)測定秦靴的二 ，聚合物的巧。再者，測定板是使 用直松為8贿的平行板，崎條件是奴為升溫速度為 5 C/娜、敎溫度為_5(rc〜2〇(rc、頻率為！ Ηζ。 〈比較例i〜比較例2的電路構件連接用接著劑的製 備〉 (比較例1及比較例2) 將作為熱塑性樹脂的苯氧樹脂「FX29 料限公司製造，產品名）2〇質量份、作為環氧樹t 1032H60」（日本環氧樹脂股份有限公司製造，產品名， 環氧當量為170) 2G質量份及「似咖」（日本環氧樹脂 股份有限公司製造’產品名，環氧當量為184)1〇質量份、 「EXA-4850-1000」（DIC股份有限公司製造，產品名，環 氧當量為35G) 5質量份、作為微膠囊型硬化促進劑的 「HX-3941HP」（旭化成化學股份有限公司製造，產品名） 30質量份混合，將所得的混合物溶解於甲苯與乙酸乙酯的 混合溶劑中，獲得接著劑組成物的清漆。對所得的清^進 行5十里後，於其中以相對於清漆85質量份而為75質量份 的比例添加作為填料的二氧化矽粒子「SE2〇5〇」（日本豐 201250873 426Ulpif 田自動車股份有限公司製造，產品名，平均粒徑為〇 5 hm)’進而以相對於清漆85質量份而為15質量份的比例 添加有機微粒子「肌-2655」（羅門哈斯（R〇hm and Haas ) 日本股份有限公司製造，產品名，核殼型有機微粒子），進 而添加作為助焊劑成分的「己二酸」（和光純藥工業（股）) 5質量份，進行攪拌而分散。使用輥塗機將所得的分散物 塗佈於作為支撐基材的隔片膜（PET膜，厚度為38 μπ〇 上後，於70 C的烘箱中乾燥1〇分鐘。如此而獲得於支撐 基材上形成厚度為35 μηι的接著劑層而成的電路構件連接 用接著劑。 〈比較例3的樹脂糊的製備〉 (比較例3 ) 將作為熱塑性樹脂的苯氧樹脂rFX293」（東都化成 (股）公司製造，產品名）2〇質量份、作為環氧樹脂的 「1032H60」（曰本環氧樹脂（股）公司製造，產品名，環 氧當量為170) 2〇質量份、「YL_983U」（日本環氧樹脂股 份有限公司製造，產品名，環氧當量為184) 1〇質量份、 及「EXA-4850-1000」（DIC (股）公司製造，產品名，環 氧當量為350) 5質量份、作為微膠囊型硬化促進劑的 「HX-3941HP」（旭化成化學（股）公司製造，產品名） 30質量份混合，將所得的混合物溶解於甲苯與乙酸乙酯的 混合溶劑中，獲得接著劑組成物的清漆。對所得的清漆進 行計量後，於其中以相對於清漆85質量份而為75質量份 的比例添加作為填料的二氧化矽粒子「SE2050」（日本豐~TA«V/V ΕΑΒ : Made by Tokyo Chemical Industry Co., Ltd., 4,4ι_bis diethylaminobenzophenone. 1032Η60: Made by Japan Epoxy Resin Co., Ltd., tris(hydroxyphenyl)methane type solid epoxy resin (5% weight reduction temperature: 35 (TC, solid state, melting point 60 ° C). 1B2PZ: manufactured by Shikoku Chemical Co., Ltd., ^ Section base · 2_phenylimidazole Percumyl D : manufactured by Oyster Oil Co., Ltd., dicumyl peroxide (one minute and a half life temperature: 175 ° C) SE1050-SPP : manufactured by Admatechs, Japan, phenyl Strontium oxide surface treatment of cerium oxide (average particle size: 〇.2μιη~〇3 μπι). Χ52-7030: 矽 矽 矽 公司 公司 矽 矽 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合 复合Manufactured by the Pharmaceutical Industry Co., Ltd. The viscosity of the above (Α) component is a value measured at 25 ° C under the condition of a sample size of E 4 mL and 3 using an EHD type rotational viscometer manufactured by Tokyo Keiki Co., Ltd. Further, the Tg of the polymer obtained by light-irradiating the component (A) used in Examples 1 to 3 was measured in the following order: <Tg of the polymer of the component (A)> In Examples 1 to 3. Among the components (A) to be formulated in the liquid photosensitive adhesive, I-379EG (manufactured by Ciba Japan Co., Ltd.) was dissolved in a ratio of 3% by mass of the component (A) to obtain a composition, and the obtained composition was applied to pET so that the film thickness became 35 μm (poly pair 201250873) 4260 lpif on the phthalocyanine ID film 'on the surface of the pit precision parallel machine (QRC production, by the same EXM-1172-B-oo) with 1 〇〇〇 τ / 2 production. The mouth name · 1 ς η m exposure. The film obtained in this way was measured by a viscoelasticity measuring device "== T=: ARES" using a laminated body obtained by a film horse having a film θ of 〇 θ. The polymer was fine. Further, the measuring plate was Using a parallel plate of straight loose for 8 bribes, the condition of the slave is that the heating rate is 5 C/na, and the temperature is _5 (rc~2〇(rc, frequency is !Ηζ.) <Comparative Example i~Comparative Example 2 (Preparation Example 1 and Comparative Example 2) A phenoxy resin (manufactured by FX29 Co., Ltd., product name) as a thermoplastic resin was used as an epoxy resin t 1032H60" (Japan) Made by Epoxy Resin Co., Ltd., product name, epoxy equivalent of 170) 2G parts by mass and "like coffee" (day Epoxy Resin Co., Ltd. manufactures 'product name, epoxy equivalent 184) 1 part by mass, "EXA-4850-1000" (manufactured by DIC Corporation, product name, epoxy equivalent: 35G) 5 parts by mass, as 30 parts by mass of "HX-3941HP" (manufactured by Asahi Kasei Chemicals Co., Ltd., product name) of the microcapsule-type hardening accelerator was mixed, and the obtained mixture was dissolved in a mixed solvent of toluene and ethyl acetate to obtain an adhesive composition. Varnish. After the obtained cleaning is carried out for 5 mils, the cerium oxide particle "SE2 〇 5 〇" as a filler is added in a ratio of 75 parts by mass based on 85 parts by mass of the varnish (Japan Feng 201250873 426Ulpif Tian Auto Co., Ltd.) Manufactured, product name, average particle size: 〇5 hm)', and organic fine particles "Muscle-2655" (Röhm and Haas Japan shares) were added at a ratio of 15 parts by mass to 85 parts by mass of the varnish. (manufactured by the company, product name, core-shell type organic fine particles), and further added 5 parts by mass of "adipic acid" (Wako Pure Chemical Industries, Ltd.) as a flux component, and stirred and dispersed. The resulting dispersion was applied to a separator film (PET film, thickness of 38 μπ〇) using a roll coater, and dried in a 70 C oven for 1 minute. Thus obtained on a support substrate. An adhesive for connecting a circuit member having a thickness of 35 μm was formed thereon. <Preparation of Resin Paste of Comparative Example 3> (Comparative Example 3) Phenoxy resin rFX293 as a thermoplastic resin (Dongdu Huacheng) )Manufactured, product name) 2 parts by mass, "1032H60" as epoxy resin (manufactured by Sakamoto Epoxy Co., Ltd., product name, epoxy equivalent of 170) 2 parts by mass, "YL_983U" ( Made by Japan Epoxy Resin Co., Ltd., product name, epoxy equivalent is 184) 1 part by mass, and "EXA-4850-1000" (manufactured by DIC Co., Ltd., product name, epoxy equivalent 350) 5 mass 30 parts by mass of "HX-3941HP" (manufactured by Asahi Kasei Chemicals Co., Ltd., product name) as a microcapsule-type hardening accelerator, and the obtained mixture was dissolved in a mixed solvent of toluene and ethyl acetate to obtain Agent composition Varnishes carry out the measurement of the varnish obtained, which is added to 85 parts by mass of the varnish and 75 parts by mass proportion of silicon dioxide as filler particles "SE2050" (Japan Feng

92 201250873 4260lpif 田自動車（股）公司製造，產品名’平均粒徑為〇 5 μηι)， 進而以相對於清漆85質量份而為15 f量份的比例添加有 機微粒子「EXL-2655」（羅門哈斯日本（股）公司製造， 產品名’减财機微粒子）’進而私作為祕劑成分的 「己二酸」（和光純藥工業（股））5質量份，進行擾拌而 分散。如此而獲得樹脂糊。 [表2] 比較你丨1 比較例2 比較例3 (E)熱塑性樹脂 FX-293 2〇 20 20 (C)熱硬化性樹脂 1032H60 __20 20 20 YL-983U EXA-4850-1000 10 10 _ 微膠囊型硬化劑 HX-3941HP 5 30 5 30 5 30 (G)填料 __ (F)助焊劑成分 SE-2050 ZZli ~~ 75 75 EXL-2655 己二酸 ' 15 5 15 ς 15 5 黏度（mPa_s) 一 接著劑層的膜厚（μπ〇 — 形成接著劑層時的凸挽：fl.Pi' 35 35 3000 35 —磨削後的翹曲 ---- 可見光透射性 C B ---—— A — Β Β A Β __ 連接性_^ A A La — A Α 對於實例1〜實例3的液狀感光性接著劑、比較例1 〜比較例2的電路構件連接用接著劑以及比較例3的樹脂 =，按照下述方法對黏度、光照射後的黏性、光照射後的 5/〇重呈減少溫度、形成接著劑層時的凸塊孔隙、磨削後的 翹曲、可見光透射性及連接性進行評價。將結果示於表工 及表2中。 〈黏度〉 ^對實例1〜實例3的液狀感光性接著劑及比較例3的 樹脂糊使用東京計器製造所製造的EHD型旋轉黏度計， 93 201250873 於樣品罝為0,4mL、3。圓錐的條件下測定25它的黏度。 〈光照射後的黏性（表面黏著力）〉 將實例1〜實例3的液狀感光性接著劑分別以b階化 後的膜厚成為35 μηι的方式旋轉塗佈塗佈於形成有金屬凸 塊的矽晶圓的電路面上。對所得的塗膜於25。匚、空氣下藉 由高精度平行曝光機（ORC (股）製作所公司製造，產^ 名· ΕΧΜ·1172-Β-〇〇)以l〇〇〇mj/cm2進行曝光。其後，使 用力世科公司製造的探針黏性試驗機，藉由探針直徑為5Λ mm、剝離速度為1〇 mm/s、接觸荷重為1〇〇 gf/cm2、接觸 時間為1 s的條件，對25°C的接著劑層表面的黏著強度測 疋5次，計算其平均值，將2〇〇 gf以下者評價為a，超過 200 gf者評價為B。 〈光照射後的5%重量減少溫度〉 將實例1〜實例3的液狀感光性接著劑分別以B階化 後的膜厚成為35 μηι的方式旋轉塗佈塗佈於形成有金屬凸 塊的矽晶圓的電路面上。對所得的塗膜於25。〇、空氣下藉 由鬲精度平行曝光機以1〇〇〇 mj/cm2進行曝光。其後，對 所得的接著劑使用示差熱-熱重量同時測定裝置（sn奈米 科技（股）公司製造，產品名：TG/DTA6300)，以l(TC/min 的升溫速度於氮氣流（400 ml/min)下測定5%重量減少溫 度。 咖 再者，用於評價的上述矽晶圓為附有突起電極的晶 圓’該突起電極的晶圓具有於晶圓上形成有銅凸塊，進二 步於其上載置有焊錫球的構成。具體而言，使用尺寸為8 94 201250873 4260lpif 吋（厚度為725 μπι)、且形成有於銅柱頂端具有無鉛焊錫 層（Sn-3.5Ag ’炼點為221 C )的構造的凸塊的日立超lsi 系統製造的JTEG PHASE11—80 (尺寸為7 3 mmx7 3麵， 凸塊間距為80 μιη，銅凸塊為20 μηι，無鉛焊錫為2〇 μιη， 凸塊數為328 ’厚度為0.55 mm，產品名）。 〈形成接著劑層時的孔隙〉 對於實例1〜實例3 ’將接著劑以膜厚成為35 μιη的 方式疑塗於上述石夕晶圓的電路面上，於、空氣下夢由 高精度平行曝光機（ORC(股）製作所公司製造，產品^ : EXM-1172-B-oo)以l〇〇〇mj/cm2進行曝光。於比較例ι中， 使用層疊機，於80°C、線麗為1.0 kgf/cm、進給速度為〇 5 mm/min的條件下，將祕構件連制接著獅附於上述 石夕晶圓的電路面上。於比較例2中，使用真空層疊機（日 合摩頓（Nichigo-M_n )(股）公司製造，產品名：^3〇 )， 於平台溫度為40。(：、膜&gt;} (diaphmm)溫度為8(rc、脫氣 時間為20秒、加壓時間為2〇秒、以〇 5贿加麗的條件 下’將電路構件連接用接著劑貼附於上述石夕晶圓的電路面 上。於比較例3中’將樹脂糊以加熱乾燥後的膜厚成為％ μιη的方式旋塗於±财晶_魏面±，卿的孰 目測及以顯微鏡確認形成有接著劑層的突起電極周邊 的孔隙，並按下述判定基準進行評價。 A:凸塊周圍並無孔隙。 B :於凸塊周圍存在少量的孔隙。 95 201250873 426Ulpif C:於凸塊周圍存在大量的孔隙β &lt;磨削後的越曲&gt; ^在6忖晶圓（厚度為625 μη〇上與上述同樣地形成 有接著劑層的晶圓上貼合下述背面研磨膠帶Α，利用背面 研磨器（迪思科（DiSC0 )(股）公司製造，產品名：DBG8|4〇 ) 磨削至厚度為50 為止。將磨削後的晶圓放置於平坦的 台上，測量晶圓最翹曲的高度，按下述判定基準進行評價。 A .晶圓的趣曲小於1 〇 mm。 B :晶圓的翹曲為10 mm以上。 (背面研磨膠帶A) 利用溶液聚合法而獲得使用丙烯酸_2_乙基己酯及甲 基丙烯酸曱酯作為主單體、且使用丙烯酸羥基乙酯及丙烯 酉久作為官能基單體的丙稀酸系共聚物。該所合成的丙烯酸 系共聚物的重量平均分子量為40萬，玻璃轉移點為 _38°C。調整相對於該丙烯酸系共聚物10〇質量份而調配有 W質量份的多官能異氰酸酯交聯劑（日本聚胺酯工業（股） 公司製造’產品名：Coronate HL)的黏著劑溶液，以乾燥 時的黏著劑厚度成為10 μιη的方式塗佈於聚烯烴膜（厚度 為150 μηι)上並進行乾燥。進而’將塗佈有石夕酮系脫模劑 的雙軸延伸聚酯膜隔片（厚度為25 μιη)層疊於黏著劑面 上。將該黏著膜於室溫下放置一週而充分進行老化。將其 作為背面研磨膠帶Α而用於試驗。 〈可見光透射性〉 將實例1〜實例3的液狀感光性接著劑分別以膜厚成92 201250873 4260lpif Manufactured by the company, the product name 'average particle size is 〇5 μηι), and the organic fine particles "EXL-2655" (Rohmha) is added in proportion to the amount of 15 parts by mass of the varnish. 5 parts by mass of "adipic acid" (Wako Pure Chemical Industries Co., Ltd.), which is made by the company of Japan (the company's product), and which is a secret ingredient, is dispersed and dispersed. Thus, a resin paste was obtained. [Table 2] Comparison 丨 1 Comparative Example 2 Comparative Example 3 (E) Thermoplastic Resin FX-293 2 〇 20 20 (C) Thermosetting Resin 1032H60 __20 20 20 YL-983U EXA-4850-1000 10 10 _ Microcapsules Type hardener HX-3941HP 5 30 5 30 5 30 (G) Filler __ (F) Flux composition SE-2050 ZZli ~~ 75 75 EXL-2655 Adipic acid ' 15 5 15 ς 15 5 Viscosity (mPa_s) Film thickness of the subsequent layer (μπ〇 - convex pull when forming the adhesive layer: fl.Pi' 35 35 3000 35 - warpage after grinding - visible light transmission CB --- - A - Β Β A Β __ Connectivity _^ AA La — A Α The liquid photosensitive adhesive of Examples 1 to 3, the adhesive for connecting the circuit member of Comparative Examples 1 to 2, and the resin of Comparative Example 3, according to The following methods evaluated the viscosity, the viscosity after light irradiation, the 5/〇 weight after light irradiation, the bump porosity at the time of forming the adhesive layer, the warpage after grinding, the visible light transmittance, and the connectivity. The results are shown in Table 2 and Table 2. <Viscosity> ^The liquid photosensitive adhesive of Examples 1 to 3 and the resin paste of Comparative Example 3 were used in Tokyo. EHD type rotary viscometer manufactured by the manufacturer, 93 201250873 The viscosity of 25 is measured under the condition of cone, 0, 4 mL, 3. The viscosity (surface adhesion) after light irradiation> Example 1~ The liquid photosensitive adhesive of Example 3 was spin-coated on the circuit surface of the tantalum wafer on which the metal bumps were formed so that the film thickness after the b-stage was 35 μm. The obtained coating film was 25匚, under air, by high-precision parallel exposure machine (manufactured by ORC (Stock) Co., Ltd., produced by ··1172-Β-〇〇) exposed at l〇〇〇mj/cm2. Thereafter, the force is used. The probe adhesion tester manufactured by Shike Company has a diameter of 5Λ mm, a peeling speed of 1〇mm/s, a contact load of 1〇〇gf/cm2, and a contact time of 1 s. The adhesion strength on the surface of the adhesive layer of °C was measured 5 times, and the average value was calculated. The evaluation of 2 〇〇gf or less was evaluated as a, and the evaluation over 200 gf was evaluated as B. 5% weight reduction temperature after light irradiation. The liquid photosensitive adhesives of Examples 1 to 3 were each B-staged and the film thickness was 35 μm. Spin coating applied to the circuit surface is formed with a metal bump silicon wafer. The resulting coating film in 25.〇, Ge air by the parallel exposure accuracy of the exposure machine to 1〇〇〇 mj / cm2. Thereafter, the obtained adhesive was subjected to a differential heat-heat weight simultaneous measurement apparatus (manufactured by Sn Nanotech Co., Ltd., product name: TG/DTA6300) at a temperature increase rate of TC/min in a nitrogen stream (400). 5% weight reduction temperature is measured under ml/min). Further, the above-mentioned tantalum wafer used for evaluation is a wafer with a bump electrode. The wafer of the bump electrode has copper bumps formed on the wafer. In the second step, the composition of the solder ball is placed thereon. Specifically, the size is 8 94 201250873 4260 lpif 吋 (thickness: 725 μπι), and the lead-free solder layer (Sn-3.5Ag 's JTEG PHASE11-80 manufactured by Hitachi Ultra-lsi system with a bump of 221 C) (size 7 3 mmx7 3 faces, bump pitch 80 μιη, copper bump 20 μηι, lead-free solder 2 μm μηη , the number of bumps is 328 'thickness is 0.55 mm, product name.' <Poles when forming the adhesive layer> For the examples 1 to 3, the adhesive is suspected to be applied to the above-mentioned Shi Xijing in such a manner that the film thickness becomes 35 μm. On the circular circuit surface, under the air, the dream is high-precision The exposure machine (manufactured by ORC (manufacturing company), product ^: EXM-1172-B-oo) was exposed at l〇〇〇mj/cm2. In the comparative example ι, using a laminator, at 80 ° C, line Li At 1.0 kgf/cm and a feed rate of 〇5 mm/min, the secret member was attached to the circuit surface of the above-mentioned Shixi wafer. In Comparative Example 2, a vacuum laminator was used. Manufactured by Nichigo-M_n Co., Ltd., product name: ^3〇), with a platform temperature of 40. (:, film &gt;} (diaphmm) temperature is 8 (rc, degassing time is 20 seconds) The pressurization time was 2 sec., and the adhesive for connecting the circuit member was attached to the circuit surface of the above-mentioned stone wafer under the condition of 贿5 bribes. In Comparative Example 3, the resin paste was heated. The thickness of the film after drying was applied to the surface of the film, and the pores around the bump electrode on which the adhesive layer was formed were confirmed by a microscope, and evaluated according to the following criteria. A: There is no pore around the bump B. There is a small amount of pore around the bump. 95 201250873 426Ulpif C: There are a lot of around the bump The pores β &lt;the more the curvature after grinding&gt; ^The following back-grinding tape 贴 is bonded to the wafer having the adhesive layer formed on the 6 忖 wafer (thickness of 625 μη〇) Grinding machine (manufactured by DiSC0), product name: DBG8|4〇) Grinding to a thickness of 50. Place the ground wafer on a flat table and measure the warpage of the wafer The height is evaluated according to the following criteria. A. The interesting taste of the wafer is less than 1 〇 mm. B: The warpage of the wafer is 10 mm or more. (Back grinding tape A) A propylene solution using 2-ethylhexyl acrylate and decyl methacrylate as a main monomer and using hydroxyethyl acrylate and propylene as a functional monomer was obtained by a solution polymerization method. Acid copolymer. The acrylic copolymer synthesized had a weight average molecular weight of 400,000 and a glass transition point of _38 °C. An adhesive solution of a polyfunctional isocyanate crosslinking agent (product name: Coronate HL manufactured by Nippon Polyurethane Co., Ltd.) blended with W parts by mass of 10 parts by mass of the acrylic copolymer was adjusted to dryness. The adhesive film was applied to a polyolefin film (thickness of 150 μm) in a manner of 10 μm thick and dried. Further, a biaxially stretched polyester film separator (having a thickness of 25 μm) coated with a linaloone-based release agent was laminated on the surface of the adhesive. The adhesive film was allowed to stand at room temperature for one week to sufficiently deteriorate. This was used as a back grinding tape for testing. <Visible light transmittance> The liquid photosensitive adhesives of Examples 1 to 3 were each formed into a film thickness.

S 96 201250873 42601pif 為35 的方式塗佈於PET(聚對苯二甲酸乙二酯）膜上， 對該塗膜於25t：、空氣下藉*高精度平行曝光機以1〇〇〇 mJW進行曝光而獲得载用膜。將所得的測定用膜自 PET剝離，使用分光光度計（日立高科技（股）公司製造， 產品名：U-3310)測定555 mn的透射率。將透射率為1〇% 以上者評價為A，低於10%者評價為B。 對於比較例1〜比較例2的電路構件連接用接著劑， 將支撐基材剝離並與上述同樣地評價可見光透射性。對於 比較例3的樹脂糊’將織糊以膜厚成$ % μιη的方式塗 佈於PET (聚對苯二甲酸乙二g旨）膜上，利用7叱的熱板 乾燥ίο分鐘而獲得測定賴。將所得的败賴自ρΕτ 剝離，與上述同樣地評價可見光透射性。 〈連接性〉 準備以下物品作為半導體元件搭_支撐構件··於表 面上具有藉由獅焊鑛理㈣成有_賴的銅配線圖 案的玻璃環氧基板_案表面，塗佈SR_AUS3()8而成的 物品。 於實例1〜實例3及比較例3 t，與「形成接著劑層 時的孔隙」的評價同樣地製伽有接著綱的晶圓，沿著 切割線將其切割成7·3 mmX7 3酿而獲得附有接著劑層的 半^體晶片。繼而’作為第—步驟，賤接部的溫度成為 固悲助焊細的魅以上且較無料制熔點低的i 8 〇 ^ 的方式設定覆晶固持n (松下生產科技（Pan_ie F_ry Solutions)(股）公司製造，產品名·· FCB3)的頭部溫度 5 97 201250873 -T^.VJUipif* (平台溫度：40。〇’以25N的荷重將 二支接著劑層的半導_ 步驟’以連接部的溫度成為較鄉焊 錫的雜_ 25(rc的方式設定覆晶轉 以25 N的荷重進行1〇秒鐘壓接，製作樣品。=接 ====型熱電偶夾持於半導體晶片與基板 於比較例1及比較例2中，將電路構件連接用接著劑 以9 mmx9 mm切出，於上述半導體元件搭載用支撐構件 的搭載有半導體晶片的區域中以8G。⑽5贿/5秒的= 貼附後’剝離支撐體膜。利用覆晶固持器，將貼附有電路 構件連接用接著劑的基板與半導體晶片以25 N的荷重、 l〇(TC的溫度壓接5秒鐘’將半導體晶片暫且蚊於基板 上。繼而，進行與上述第-步驟及第二步驟相同的操作， 製作樣品。 對壓接後的樣品確認328個凸塊的菊鏈連接的導通， 按下述判定基準評價連接性。 A:確認到導通。 B.存在導通不良的部位。 (實例4及實例5以及比較例4〜比較例8) (液狀感光性接著劑A-1) 以表3所示的組成比（單位：質量份）於放射線聚合 性化合物中添加光起始劑及助焊劑成分，使用60°c的油浴 進行攪拌、分散，獲得液狀感光性接著劑。S 96 201250873 42601pif is applied to a PET (polyethylene terephthalate) film in a 35-degree manner, and the coating film is exposed to 1 〇〇〇mJW by a high-precision parallel exposure machine at 25t: air. The supported film was obtained. The obtained film for measurement was peeled off from PET, and the transmittance of 555 mn was measured using a spectrophotometer (manufactured by Hitachi High-Tech Co., Ltd., product name: U-3310). A case where the transmittance was 1% or more was evaluated as A, and a case where the transmittance was less than 10% was evaluated as B. With respect to the adhesive for connecting the circuit members of Comparative Examples 1 to 2, the support substrate was peeled off, and the visible light transmittance was evaluated in the same manner as described above. In the resin paste of Comparative Example 3, the woven paste was applied to a PET (polyethylene terephthalate) film so as to have a film thickness of $% μm, and was dried by a 7-inch hot plate for ί. Lai. The obtained ruin was peeled off from ρ Ετ, and the visible light transmittance was evaluated in the same manner as above. <Connectivity> The following items were prepared as a semiconductor component lap support member. The surface of the glass epoxy substrate having a copper wiring pattern formed by lion welding (4) on the surface was coated with SR_AUS3()8. Made of items. In the same manner as in the evaluation of "the pores in the formation of the adhesive layer" in the examples 1 to 3 and the comparative example 3 t, the wafer was etched and cut into 7·3 mm×7 3 along the cutting line. A half-body wafer with an adhesive layer was obtained. Then, as the first step, the temperature of the splicing part becomes the charm of the solid welding and the i 8 〇^ which is lower than the melting point of the material is set to hold the crystal holding n (Pan_ie F_ry Solutions) ) The head temperature of the company's manufacturing, product name · FCB3) 5 97 201250873 -T^.VJUipif* (platform temperature: 40. 〇 'The semi-conductive layer of the two adhesive layers with a load of 25N _ step' to the joint The temperature becomes a heterogeneous _ 25 of the soldering of the solder (the rc method is set to flip-chip and the load of 25 N is pressed for 1 sec to make a sample. ===== type thermocouple is clamped on the semiconductor wafer and the substrate In Comparative Example 1 and Comparative Example 2, the adhesive for connecting the circuit member was cut out at 9 mm x 9 mm, and 8 G was placed in the region where the semiconductor wafer was mounted on the support member for mounting the semiconductor element. (10) 5 bribe/5 seconds = After the attachment, the support film was peeled off. The substrate to which the adhesive for connecting the circuit member was attached was bonded to the semiconductor wafer with a load of 25 N, and the temperature of the TC was crimped for 5 seconds. The wafer is temporarily mosquitoed on the substrate. Then, the first step is performed. The sample was prepared in the same manner as in the second step. The galvanic chain connection of 328 bumps was confirmed for the sample after the pressure measurement, and the connectivity was evaluated according to the following criteria. A: Conduction was confirmed. B. Poor conduction was observed. (Example 4 and Example 5 and Comparative Example 4 to Comparative Example 8) (Liquid photosensitive adhesive A-1) The composition ratio (unit: parts by mass) shown in Table 3 was added to the radiation polymerizable compound. The photoinitiator and the flux component were stirred and dispersed in an oil bath of 60° C. to obtain a liquid photosensitive adhesive.

S 98 201250873 4260 lpif (液狀感光性接著劑B-l ) 以表4所示的組成比（單位：質量份）於放射線聚合 性化合物中添加環氧樹脂及光起始劑’使用6〇。〇的油浴進 行擾摔、分散。使所得的混合物回到25〇C後，添加硬化促 進劑及熱自由基產生劑，並進行攪拌，獲得液狀感光性接 著劑。 (液狀感光性接著劑B_2) 以表4所示的組成比（單位：質量份）於放射線聚合 性化合物中添加填料成分，進行攪拌而分散。於所得的分S 98 201250873 4260 lpif (liquid photosensitive adhesive B-l) The epoxy resin and the photoinitiator were added to the radiation polymerizable compound at a composition ratio (unit: parts by mass) shown in Table 4, using 6 Å. The simmering oil bath is disturbed and scattered. After the obtained mixture was returned to 25 ° C, a curing accelerator and a thermal radical generating agent were added and stirred to obtain a liquid photosensitive adhesive. (Liquid photosensitive adhesive B_2) The filler component was added to the radiation-polymerizable compound in the composition ratio (unit: parts by mass) shown in Table 4, and the mixture was stirred and dispersed. Points earned

散物中添加環氧樹脂、光起始劑及助焊劑成分，使用60°C 的油浴進行攪拌、分散。使所得的混合物回到25°C後，添 加硬化促進劑及熱自由基產生劑，並進行授拌，獲得液狀 感光性接著劑。 (液狀感光性接著劑B_3 ) 以表4所示的組成比（單位：質量份）於放射線聚合 性，合物中添加環氧樹脂、光起始劑及助焊劑成分，使用 ⑹c的油浴進行攪拌、分散。使所得的混合物回到25。〇An epoxy resin, a photoinitiator, and a flux component were added to the bulk, and the mixture was stirred and dispersed using an oil bath at 60 °C. After the obtained mixture was returned to 25 ° C, a curing accelerator and a thermal radical generator were added and mixed to obtain a liquid photosensitive adhesive. (Liquid photosensitive adhesive B_3) The epoxy resin, the photoinitiator, and the flux component were added to the composition in the composition ratio (unit: parts by mass) shown in Table 4, and the oil bath of (6)c was used. Stir and disperse. The resulting mixture was returned to 25. 〇

，添加硬化促進劑及熱自由基產生劑，並進行擾拌，獲 得液狀感光性接著劑。 X (膜狀接著劑A-11) 將作為熱塑性樹脂的苯氧樹脂「FX293」2〇 r 1032H60j 2〇 ί 「「EXA播1000」5質量份、作為微膠囊型硬化 促進劑的「HX_3941HP」30質量份以及作為助烊劑成分的 99 201250873 420Ulpif 己二酸」5質量份混合，將所得的混合物溶解於甲苯與 乙酸乙酯的混合溶劑中，獲得接著劑組成物的清漆。使用 輥塗機將所得的清漆塗佈於作為支撐基材的隔片膜 「A-31」（帝人杜邦膜（股）公司製造’脫模PET膜，厚 度為38μιη)上後，於li(TC的烘箱中乾燥1〇分鐘。如此 而獲得於支撐基材上形成厚度為3 μιη的膜狀接著劑而成 的膜。 k膜狀接者 將作為熱塑性樹脂的苯氧樹脂rFX293」2〇質量份 作為環氧樹脂的「1032H60」20質量份、「YL-983U」 質量份及「ΕΧΑ-4850·1000」5質量份以及作為微膠囊^ 化促進劑的「ΗΧ-3941ΗΡ」30質量份混合，將所得的混 物溶解於曱苯與乙旨的混合溶射，獲得接著劑組 物的清漆。騎得的清漆進行計量後，於其巾以相對於 漆85質量份而為75質量份的比例添加作為填料的二氧 石^粒子「SE205〇J，進而以相對於清漆85 f量份而為 質®份的比例添加有機微粒子「EXL_2655」，進行攪拌 分散。使賴塗機騎得的分散物塗佈於作為支撐基材! ^片，「錢」（帝人杜邦膜⑻公司製造，脫模ρί 、旱度為38 μιη)上後’於11〇ΐ的焕箱中乾燥ι〇分鐘 口，得於支縣材上形成厚度為35师_狀接&amp; 而成的膜。 (膜狀接者劑Β-12) 除了將膜狀接著劑的厚度變更為32 μηι以外，與膜狀A hardening accelerator and a thermal radical generator were added and scrambled to obtain a liquid photosensitive adhesive. X (membrane-like adhesive A-11) phenoxy resin "FX293" 2 〇r 1032H60j 2 〇 「 ""EXA-cast 1000" 5 parts by mass, "HX_3941HP" 30 as a microcapsule-type hardening accelerator 5 parts by mass of 99 201250873 420 Ulpif adipic acid as a helping agent component were mixed, and the obtained mixture was dissolved in a mixed solvent of toluene and ethyl acetate to obtain a varnish of the adhesive composition. The obtained varnish was applied to a separator film "A-31" (manufactured by Teijin DuPont Film Co., Ltd., having a thickness of 38 μm) as a support substrate by a roll coater, and then li (TC). The oven was dried for 1 minute, and a film of a film-like adhesive having a thickness of 3 μm was formed on the support substrate. The k-film connector was used as a thermoplastic resin phenoxy resin rFX293" 2 parts by mass. 20 parts by mass of "1032H60" of epoxy resin, 5 parts by mass of "YL-983U" and 5 parts by mass of "ΕΧΑ-4850·1000", and 30 parts by mass of "ΗΧ-3941ΗΡ" as a microcapsule accelerator. The obtained mixture is dissolved in a mixed solvent of benzene and benzene to obtain a varnish of the adhesive composition. The varnish obtained by the riding is metered in a ratio of 75 parts by mass based on 85 parts by mass of the varnish. The organic granules "EXL_2655" are added to the amount of the oxidized granules in an amount of 5% by weight, and the organic fine particles "EXL_2655" are added to the granules in an amount of 85 parts by weight. As a supporting substrate! ^, "money" ( Made by DuPont Membrane (8), demoulding ρί, drought degree is 38 μιη), and then dried in the 11 〇ΐ 焕 box, the thickness of the 县 〇 , , , 支 支 支 支 支 支 支 支 支 支 支 支 支 支 支 支 支 支 支 支 支 支 支(film-like connector Β-12) In addition to changing the thickness of the film-like adhesive to 32 μm,

100 201250873 42601pif 接著劑B-ll同樣地獲得膜。 (接著劑清漆B-13) 將作為熱塑性樹脂的苯氧樹脂「FX293」質量份、 ^乍，環氧樹脂的「1032H60」20質量份、「YLjMUj'o 量伤及EXA-4850-1000」5質量份以及作為微膠囊型硬 ，促進劑的「HX_3941HP」3〇質量份混合，將所得的混合 物溶解於甲苯與乙酸乙酯的混合溶劑中，獲得接著劑組成 物的清漆。對所得的清漆進行計量後’於其中以相對於清 漆85質量份而為75質量份的比例添加作為填料的二氧化 石夕粒子「SE2050」’進而以相對於清漆85質量份而為15 質量份的比例添加有機微粒子「EXL-2655」，進行攪拌而 分散。使用將曱苯與乙酸乙酯以1 : 1的比例混合的混合溶 劑’以黏度成為3000 mPa.s的方式對所得的分散物進行調 整，獲得接著劑清漆。 [表3] ---- -j 1---- A-1 (A)放射線聚合性化合物 M-140 60 AMP-20GY 20 (B)光起始劑 I-379EG 3 EAB 3 (F)助焊劑成分 己二酸 1.5 黏度（mPa-s) 600 101 201250873 426Ulpif [表4] B-l B-2 B-3 (A)放射線聚合性化合物 M-140 60 60 60 AMP-20GY 20 20 20 (B)光起始劑 I-379EG 3 3 3 EAB 3 3 3 (F)助焊劑成分 己二酸 - - 5 (C)熱硬化性樹脂 1032-H60 40 40 40 硬化促進劑 1B2PZ 2 2 2 (D)熱自由基產生劑 Percumyl D 1 1 1 (G)填料 SE1050-SPP - 50 - (A)成分的聚合物的Tg (°C) 50 黏度（mPa-s) 1200 3000 1200 [表5] A-11 (E)熱塑性樹脂 FX-293 20 (C)熱硬化性樹脂 1032H60 20 YL-983U 10 EXA-4850-1000 5 微膠囊型硬化劑 HX-3941HP 30 (F)助焊劑成分 己二酸 5 [表6]100 201250873 42601pif The following agent B-ll obtained the film in the same manner. (Binder varnish B-13) 20 parts by mass of phenoxy resin "FX293" as a thermoplastic resin, 20 parts by mass of "1032H60" of epoxy resin, "Model damage of YLjMUj'o and EXA-4850-1000" 5 The mass fraction and 3 parts by mass of "HX_3941HP" as a microcapsule-type hard and accelerator were mixed, and the obtained mixture was dissolved in a mixed solvent of toluene and ethyl acetate to obtain a varnish of the adhesive composition. After the varnish was measured, the amount of the sulphur dioxide particles "SE2050" as a filler was added in a ratio of 75 parts by mass to 85 parts by mass of the varnish, and further 15 parts by mass based on 85 parts by mass of the varnish. The organic fine particles "EXL-2655" were added in a ratio, and the mixture was stirred and dispersed. The obtained dispersion was adjusted to have a viscosity of 3,000 mPa.s using a mixed solvent of benzene and ethyl acetate mixed at a ratio of 1:1 to obtain an adhesive varnish. [Table 3] ---- -j 1---- A-1 (A) Radiation Polymerizable Compound M-140 60 AMP-20GY 20 (B) Photoinitiator I-379EG 3 EAB 3 (F) Flux component adipic acid 1.5 Viscosity (mPa-s) 600 101 201250873 426Ulpif [Table 4] Bl B-2 B-3 (A) Radiation polymerizable compound M-140 60 60 60 AMP-20GY 20 20 20 (B) Light Starting agent I-379EG 3 3 3 EAB 3 3 3 (F) Flux component adipic acid - 5 (C) Thermosetting resin 1032-H60 40 40 40 Hardening accelerator 1B2PZ 2 2 2 (D) Thermal freedom Base Producer Percumyl D 1 1 1 (G) Filler SE1050-SPP - 50 - Tg of the polymer of (A) (°C) 50 Viscosity (mPa-s) 1200 3000 1200 [Table 5] A-11 (E ) Thermoplastic Resin FX-293 20 (C) Thermosetting Resin 1032H60 20 YL-983U 10 EXA-4850-1000 5 Microcapsule Type Hardener HX-3941HP 30 (F) Flux Component Adipic Acid 5 [Table 6]

B-ll B-12 B-13 (E)熱塑性樹脂 FX-293 20 20 20 (C)熱硬化性樹脂 1032H60 20 20 20 YL-983U 10 10 10 EXA-4850-1000 5 5 5 微膠囊型硬化劑 HX-3941HP 30 30 30 (G)填料 SE-2050 75 75 75 EXL-2655 15 15 15 黏度（mPa-s) - - 3000 102 201250873 4260 lpif 於表3〜表6中，各記號是指下述物質。 Μ-Μ0 :東亞合成（股）公司製造，丙烯酸_2_(ι，2_環 己羧基醯亞胺）乙酯（含有醯亞胺基的單官能丙烯酸酯，5% 重量減少溫度：200°C，25°C的黏度：450 mPa*s)。 AMP-20GY :新中村化學工業（股）公司製造，苯氧 基一乙一醇丙婦酸S旨（單官能丙稀酸S旨，5%重量減少溫 度.175 C ’ 25 C 的黏度：16 mPa.s)。 I-379EG:汽巴日本（股）公司製造，2-二甲基胺基-2-(4-曱基-苄基)-1-(4-嗎啉-4-基-苯基)-丁烷-1-酮（5%重量減少 溫度· 260 C ’ i射線吸光係數：8000 ml/gcm)。 EAB :東京化成（股）公司製造，4,4'-雙二乙基胺基 二苯甲酮。 己二酸：和光純藥工業（股）公司製造。 1032H60 :日本環氧樹脂（股）公司製造，三(經基苯 基）甲烷型固態環氧樹脂（環氧當量：170，5%重量減少溫 度：350°C ’固態’熔點為60°C )。 1B2PZ :四國化成（股）公司製造，丨_苄基-2-苯基咪 〇坐。B-ll B-12 B-13 (E) Thermoplastic Resin FX-293 20 20 20 (C) Thermosetting Resin 1032H60 20 20 20 YL-983U 10 10 10 EXA-4850-1000 5 5 5 Microcapsule Type Hardener HX-3941HP 30 30 30 (G) Filler SE-2050 75 75 75 EXL-2655 15 15 15 Viscosity (mPa-s) - - 3000 102 201250873 4260 lpif In Tables 3 to 6, the symbols refer to the following substances . Μ-Μ0: Manufactured by East Asia Synthetic Co., Ltd., 2-(i,1,cyclohexylidene quinone imino)ethyl acrylate (monofunctional acrylate containing quinone imine group, 5% weight reduction temperature: 200 ° C , viscosity at 25 ° C: 450 mPa * s). AMP-20GY: Manufactured by Shin-Nakamura Chemical Industry Co., Ltd., phenoxy-inco-glycolic acid S (single-functional acrylic acid S, 5% weight reduction temperature. 175 C ' 25 C viscosity: 16 mPa .s). I-379EG: Manufactured by Ciba Japan, 2-dimethylamino-2-(4-indolyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butyl Alkan-1-one (5% weight reduction temperature · 260 C 'i ray absorption coefficient: 8000 ml/gcm). EAB: 4,4'-bisdiethylamino benzophenone manufactured by Tokyo Chemical Industry Co., Ltd. Adipic acid: manufactured by Wako Pure Chemical Industries Co., Ltd. 1032H60: Made by Japan Epoxy Resin Co., Ltd., tris(p-phenyl)methane type solid epoxy resin (epoxy equivalent: 170, 5% weight loss temperature: 350 ° C 'solid state' melting point is 60 ° C) . 1B2PZ: Manufactured by Shikoku Chemicals Co., Ltd., 丨_benzyl-2-phenyl 〇 〇.

Percumyl D :曰油（股）公司製造，過氧化二異丙苯 (一分鐘半生期溫度：175°C)。 SE1050-SPP :日本豐田自動車公司（股）製造，苯基 矽烷表面處理二氧化矽（平均粒徑：0.2 μηι〜0.3 μηι)。 FX-293 :東都化成（股）公司製造，含有芴骨架的笨 氧樹脂（環氧當量：15000，Mw :44000，樹脂 Tg: 163。(：）。 103 201250873 42601pif YL-983U :曰本環氧樹脂（股）公司製造’ Bis-F型液 狀環氧樹脂（環氧當量：184)。 EXA-4850-1000 : DIC (股）公司製造，柔軟強韌性環 氧樹脂（環氧當量：350)。 HX-3941HP :旭化成化學（股）公司製造，微膠囊型 硬化促進劑。 SE-2〇5〇 :日本豐田自動車（股）公司製造，二氧化矽 粒子（平均粒徑為〇 5 μπι)。 EXL-2655 :羅門哈斯日本（股）公司製造，核殼型有 機微粒子。 上述（Α)成分的黏度為使用東京計器製造所製造的 EHD型旋轉黏度計，於樣品量為〇 4 mL、3。圓錐的條件下 於25°C測定的值。 另外’按以下順序來測定對液狀感光性接著劑B-1〜 液狀感光性接著劑B-2中使用的（A)成分進行光照射所 得的聚合物的Tg。 &lt; (A)成分的聚合物的Tg&gt; 於液狀感光性接著劑B-1〜液狀感光性接著劑b&gt;2中 調配的（A)成分中，以相對於（A)成分而成為3質量％ 的比例使I-379EG (汽巴日本公司製造）溶解而獲得組成 物，將所得的組成物以膜厚成為35 μιη的方式塗佈於ρΕτ (聚對苯二甲酸乙二酯）膜上，對該塗膜於25。匸 ' 空氣下 藉由高精度平行曝光機（〇RC製作所製造，產品^ · EXM-1172-B-oo)以1000mJ/cm2進行曝光。將如此:獲得Percumyl D: manufactured by Emu Oil Co., Ltd., dicumyl peroxide (one-minute half-life temperature: 175 ° C). SE1050-SPP: manufactured by Japan Toyota Auto Co., Ltd., phenyl decane surface treated cerium oxide (average particle size: 0.2 μηι~0.3 μηι). FX-293: odoxy resin manufactured by Dongdu Chemical Co., Ltd., containing an anthracene skeleton (epoxy equivalent: 15000, Mw: 44000, resin Tg: 163. (:). 103 201250873 42601pif YL-983U: 曰本epoxy Resin Co., Ltd. manufactures 'Bis-F type liquid epoxy resin (epoxy equivalent: 184). EXA-4850-1000 : DIC (manufactured by the company), soft and tough epoxy resin (epoxy equivalent: 350) HX-3941HP: Microcapsule-type hardening accelerator manufactured by Asahi Kasei Chemical Co., Ltd. SE-2〇5〇: manufactured by Japan Toyota Auto Co., Ltd., cerium oxide particles (average particle size 〇5 μπι). EXL-2655: Core-shell type organic fine particles manufactured by Rohm and Haas Japan Co., Ltd. The viscosity of the above (Α) component is EHD type rotary viscometer manufactured by Tokyo Keiki Co., Ltd., and the sample amount is 〇4 mL, 3 The value measured at 25 ° C under the condition of a cone. The light irradiation of the component (A) used in the liquid photosensitive adhesive B-1 to the liquid photosensitive adhesive B-2 was measured in the following order. Tg of the obtained polymer. &lt;Tg of the polymer of the component (A)&gt; In the component (A) blended in the liquid photosensitive adhesive B-1 to the liquid photosensitive adhesive b&gt;2, I-379EG was obtained at a ratio of 3% by mass based on the component (A). The composition obtained by the Japanese company was dissolved to obtain a composition, and the obtained composition was applied onto a pΕτ (polyethylene terephthalate) film so as to have a film thickness of 35 μm, and the coating film was applied to 25 匸 air. The exposure was performed at 1000 mJ/cm 2 by a high-precision parallel exposure machine (manufactured by 〇RC Manufacture, product ^ · EXM-1172-B-oo).

S 104 201250873 4260 lpif 的膜以膜厚成為150 μηι的方式積層而獲得積層體，對所 得的積層體使用黏彈性測定裝置（流變科學F.E.(股）公 司製造’產品名：ARES)測定-50°C〜200°C的tan5波峰 溫度，求出（A)成分的聚合物的Tg。再者，測定板是使 用直徑為8 mm的平行板，測定條件是設定為升溫速度為 5°C/min，測定溫度為_5〇°c〜200°C，頻率為1 Hz。 [表7]S 104 201250873 4260 The film of lpif is laminated so that the film thickness becomes 150 μm, and the laminated body is obtained, and the obtained laminated body is measured using a viscoelasticity measuring apparatus (product name: ARES) manufactured by Rheology Scientific FE Co., Ltd. -50 The Tg peak of the polymer of the component (A) was determined at a tan5 peak temperature of °C to 200 °C. Further, the measuring plate was a parallel plate having a diameter of 8 mm, and the measurement conditions were set to a temperature rising rate of 5 ° C / min, a measuring temperature of _5 〇 ° c to 200 ° C, and a frequency of 1 Hz. [Table 7]

實例4 實例5 比較例4 比較例5 比較例6 比較例7 比較例8 最表面層 Α-1 A-l - A-ll - _ — 最表面層的膜厚（μιη) 2 2 _ 3 - • • 内層 Β-1 B-2 B-ll B-12 B-13 B-2 B-3 内層的膜厚（μιη) 33 33 35 32 35 35 35 接著劑層的膜厚（μιη) 35 35 35 35 35 35 35 — 形成接著劑層時的凸 塊孔隙 A A B B A A A 磨削後的翹曲 A A B B B A A 可見光透射性 A A A A A A A 凸塊露頭性 A A B B A A A 基板連接性 A A A A A B A 晶圓連接性 A A A A A B A 對基板的剪切接著強 度 A A A A A A B 〈接著劑層的形成〉 作為評價用的矽晶圓，準備附有突起電極的晶圓，該 附有突起電極的晶圓具有於晶圓上形成有銅凸塊、進一步 於其上載置有焊錫球的構成。具體而言，使用尺寸（厚度： 725 μηι)為8吋、且形成有於銅柱頂端具有無鉛焊錫層 (Sn-3.5Ag ’炼點為221°C )的構造的凸塊的曰立超LSI 系統製造的 JTEG PHASE11—80 (尺寸為 7.3 mmx7.3 mm， 105 201250873 4 二 ouipif 凸塊間距為80 μηχ，鋼凸塊為2〇 μιη，無鉛焊錫為2〇哗， 凸塊數為328,厚度為〇_55mm’產品名）。 (實例4) 將液㈣紐接㈣以膜厚成為 33 μπι的方式旋 塗於上述⑪電路面上，於坑、空氣下藉由高精度 平行曝光機（〇RC製作所製造，「EXM_m2_B_〇〇」（產品 名））以1000 mJ/cm2進行曝光。繼而，於該層上以膜厚成 ,2，的^式旋塗液狀感光性接著劑a i，於25。。、空 氣下藉由高精度平行曝光機（〇RC製作所製造， 「EXM-1172-B-oo」（產品名））以 1〇〇〇mj/cm2 進行曝光。 (實例5) 將液狀感光性接著劑Β·2以膜厚成為33啤的方式旋 塗於上述⑦晶圓的電路面上，於坑、空氣下藉由高精度 平行曝光機（ORC製作所製造，「exm hw-b·^」（產品 名））以lOOOmJWit行曝光。繼*，於該層±以膜厚成 為2 μ/!的f式旋塗液狀感光性接著劑A1，於25。〇、空 氣下藉由高精度平行曝光機（〇RC製作所製造， 「EXM-1172-B-co」（產品名））以 1〇〇〇mJ/cm2 進行曝光。 (比較例4) 使用真空層疊機（日合摩頓（股）公司製造，產品名： V130) ’於平台溫度為4〇。〇、膜片溫度為8(rc、脫氣時間 為20秒、加壓時間為20秒、以〇 5 MPaM壓的條件下， 將膜狀接著劑B-11貼附於上述矽晶圓的電路面上。 (比較例5)Example 4 Example 5 Comparative Example 4 Comparative Example 5 Comparative Example 6 Comparative Example 7 Comparative Example 8 Top surface layer Α-1 Al - A-ll - _ - Film thickness of the outermost layer (μιη) 2 2 _ 3 - • • Inner layer Β-1 B-2 B-ll B-12 B-13 B-2 B-3 Film thickness of inner layer (μιη) 33 33 35 32 35 35 35 Film thickness of the adhesive layer (μιη) 35 35 35 35 35 35 35 — Bump pores when forming an adhesive layer AABBAAA Warped AABBBAA after grinding Visible light transmission AAAAAAA Bump outcrop AABBAAA Substrate connectivity AAAAABA Wafer connectivity AAAAABA Shear strength of substrate AAAAAAB <Adhesive layer Formation As a wafer for evaluation, a wafer having a bump electrode having a structure in which a copper bump is formed on a wafer and a solder ball is further placed thereon is prepared. Specifically, a stand-up super LSI having a structure in which a size (thickness: 725 μηι) is 8 Å and a bump having a structure of a lead-free solder layer (Sn-3.5Ag 'refining point of 221 ° C) is formed at the tip of the copper post is used. JTEG PHASE11-80 manufactured by the system (size 7.3 mmx7.3 mm, 105 201250873 4 2 ouipif bump spacing is 80 μηχ, steel bump is 2〇μιη, lead-free solder is 2〇哗, bump number is 328, thickness For 〇 _55mm 'product name). (Example 4) The liquid (4) button (4) was spin-coated on the above-mentioned 11-circuit surface so that the film thickness became 33 μm, and it was manufactured by a high-precision parallel exposure machine (〇 RC Manufacture) in pit and air, "EXM_m2_B_〇〇 (Product name)) Exposure at 1000 mJ/cm2. Then, on the layer, a liquid-like photosensitive adhesive a i at a film thickness of 2 was applied at 25. . In the air, the exposure was performed at 1 〇〇〇mj/cm2 by a high-precision parallel exposure machine ("EXM-1172-B-oo" (product name) manufactured by 〇RC Manufacturing Co., Ltd.). (Example 5) The liquid photosensitive adhesive Β2 was spin-coated on the circuit surface of the above-mentioned seven wafers so as to have a film thickness of 33, and was produced by a high-precision parallel exposure machine (ORC Manufacturing Co., Ltd.) under a pit or air. , "exm hw-b·^" (product name)) is exposed by the lOOOmJWit line. Next, in this layer, a f-type spin-on photosensitive photosensitive adhesive A1 having a film thickness of 2 μ/! was used. Exposure was carried out at 1 〇〇〇 mJ/cm2 by a high-precision parallel exposure machine ("EXM-1172-B-co" (product name) manufactured by 〇RC Co., Ltd.) under air and air. (Comparative Example 4) A vacuum laminator (manufactured by Nikken Morton Co., Ltd., product name: V130) was used at a stage temperature of 4 Torr. 〇, the film temperature is 8 (rc, degassing time is 20 seconds, pressurization time is 20 seconds, under the condition of 〇 5 MPaM pressure, the film-like adhesive B-11 is attached to the circuit of the above-mentioned silicon wafer Face (Comparative Example 5)

S 106 201250873 42601pif 媒與膜狀接著·12於5〇。。層疊而 &amp;付積層體。使用真空層疊機（日合摩頓（股）公司製造， 產品名：V13G)，於平台溫度為抓c、膜片溫度為^、 脫氣時間為2〇秒、加壓時間為20秒、以0.5 MPa加壓的 條件下，將該積層體以膜狀接著劑B_12與電路面接觸的方 式貼附於上述矽晶圓的電路面上。 (比較例6) 將接著劑清漆B-13以加熱乾燥後的膜厚成為％ μιη 的方式旋塗於上述⑪晶圓的電路面上，彻U(rc的熱板 乾燥10分鐘。 ‘ (比較例7) 將液狀感光性接著劑B_2以膜厚成為35 μηι的方式旋 塗於上述# _電路面上，於25ΐ、m由高精度 平行曝光機（ORC製作所製造，「EXM-nu-Ba」（產品 名））以1000 mJ/cm2進行曝光。 (比較例8) 將液狀感光性接著劑B_3以膜厚成為35 μιη的方式旋 塗於上述矽晶圓的電路面上，於25。〇、空氣下藉由高精度 平行曝光機（ORC製作所製造，γΕΧμ_ιι72-Β-〇〇」（產品 名））以1000 mJ/cm2進行曝光。 按照下述方法’對形成接著劑層時的凸塊孔隙、磨削 後的翹曲、可見光透射性、凸塊露頭性、基板連接性及晶 圓連接性進行評價。將結果示於表7中。 〈形成接著劑層時的孔隙〉 107 201250873 ^zouxpif 。目測及以顯微鏡確認上述所得的附有接著劑層的矽晶 圓的形成有接著劑層的突起電_邊的孔隙，按下述判定 基準進行評價。 A:凸塊周圍無孔隙。 B:凸塊周圍存在少量的孔隙。 &lt;磨削後的龜曲&gt; 於在6对晶圓（厚度625 μη〇上與上述同樣地形成有 接者劑層的晶圓上貼合下述背面研磨膠帶Α，利用背面 磨器（迪思科（股）公司製造，產品名：DBG8540)磨削 至厚度為5G μηι為止4磨削後的晶圓放置於平坦的台 上’測量晶圓最編的高度，按下述判定基準進行評價: A :晶圓的起曲小於1 〇 mm。 B :晶圓的輕曲為1〇 mm以上。 (背面研磨膠帶A) 藉由溶液聚合法而獲得使用两烯酸_2_乙基己酯及 基丙烯酸甲酯作為主單體、且使用丙烯酸羥美 曰 ，為官能基單體的丙烯酸系共聚物。該“ 共聚物的重量平均分子量為40萬，玻璃轉移點為 8C。f周整相對於該丙稀酸系共聚物1〇〇質量份調配⑺ 質量份的多官能異氱酸酯交聯劑（曰本聚胺酯工業（股 公司製造，產品名：CoronateHL)而成的黏著劑溶液以 乾燥時的黏著#1厚度絲H)㈣的方式塗佈於聚彿炉膜 (厚度為150 μπ〇上並進行乾燥。進而，將塗佈有销系 脫模劑的雙軸延伸聚酯膜隔片（厚度為25 μηι)層疊於黏 108 201250873 4260 lpif 著劑面上。將該黏著膜於室溫下放置一週而充分進行老 化。將其作為背面研磨膠帶A而用於試驗。 &lt;可見光透射性&gt; 以與製作附有接著劑層的半導體晶圓時相同的順序， 於PEy (聚對苯二甲酸乙二醋）膜上形成總膜厚為％ _ 的接著劑層，獲得測定用膜。將所得的測定用膜自PET剝 離，使用分光光度計（日立高科技（股）公司製造產品 名.U-3310)測定4〇〇 nm〜8〇〇 nm的透射率，按 定基準進行評價。 A :透射率的最大值為20%以上。 B :透射率的最大值小於2〇〇/〇。 〈凸塊露頭性〉 利用顯微鏡對與上述同樣地獲得的附有接著劑層的半 導體晶圓的突起電極頂端的凸塊的露頭 下述判定基準進行評價。 丁靦$按 A:凸塊露頭，確認到凸塊的頂端。 B.凸塊的露頭不充分，無法確認到凸塊的頂端。 〈基板連接性〉 ^以下物品作為半導體元件搭載用支撐構件：於表 焊劑處理而形成有防錄皮膜的鋼配線圖 =玻璃㈣基板的圖絲面，塗佈SR姻观而成的 接著tnr實例1及比較例6、比較例7中’與「形成 者爾時的孔隙」的評價同樣地製作附有接著劑層= 109 1 201250873 42Wlplf 導體晶圓，沿著切割線將其切 附有接著劑層的半導體日# ，mmX.3mm而獲得 接部的= i 而，作為第—步驟，以連 炫點低的點以上且較無鉛焊錫的 (股)公司製造固持器(松下生產科技 赋），以25 N的荷重將上^)^員部溫度（平台溫度： 與附有接著劑層的半導體晶片件f载用支撐構件 2:二方=連接部的溫度成為較無=錫：:ίί = =溫度，…的荷重 =型熱電偶夾持於半“心== 二:::接著劑— .體元件搭载_件的搭載有牛:= =體膜剝離。利用覆晶固持器以25 Ν的荷重、刚。c 的&gt;皿度將貼附有膜狀接著劑的基板 0〒 二：半導，且固定於基板上。繼而:=: 苐一步驟及第二步驟相同的操作，製作樣品。一辻 對壓接後雜品確認328個菊魏接的導通， 基準::=並利用顯微鏡觀察連接剖面，按下述判定 广連接剖面中未觀察到填料的混入。 B·存在導通不良的部位。於連接剖財觀察到填料 〇 110 201250873 42601pif 的混入 〈晶圓連接性〉 上述同樣地獲得的附有接著劑層的半導體 圓與 其他半導使dU連制壓製機，以連 ，為較無料蘭紐高的2耽的方錢行設定、= 晶圓接合。晶人彳乡，+卿樣心=/ 割步驟，對經分離而成的 曰I ir 硯察進行觀察，觀按下射仪基準確認 晶圓連接性 B 的混入。 士確《心到連接’於連接剖面中未觀察到填料的混入。 存在連接不良的部位，於連接剖面中觀察到填料 〈對基板的剪切接著強度〉 ^以形成與上述所得的附有接著劑層的矽晶圓相同的接 著劑層的方式，藉由旋塗（2〇〇〇 rpm/1〇 s、4〇〇〇 rpm/2〇 s) 將液狀感光性接著劑以總厚成為3 5 μιη的方式塗佈於矽晶 圓上。於所得的塗膜上層疊經脫模處理的PET膜，藉由高 精度平行曝光機（ORC製作所製造， 品名））以1000 mj/cm2進行曝光。其後，以$ mmx5瓜瓜 見方將矽晶圓切出。於25〇t：、0.5 MPa、10秒的條件下將 所切出的附有接著劑的矽晶片覆晶接合於有機基板 (PSR-4000、SR-AUS308，0.2 mmt)上，於 175。(：施加 2 小時的後硬化而獲得評價樣品。使用剪切接著力試驗機 「Dage-4000」（產品名）將該評價樣品於265ΐ的熱板上 保持30秒鐘後，對晶片與有機基板的剪切接著強度進行測 111 201250873 420Ulpif 定。再者 關於比較例4及比較例5,代麩 行膜狀接著劑的層疊。 代9上述塗膜而進 A :努切接著強度為】.GMPa以上 剪切接著強度小於J 〇MPa f產業上之可利用性j 根據本么日月，可無需進行形成接著劍層 # 由曝絲獲得附有接著劑層的半導體 因此^藉 短時間内的3階化，可大幅度地減少製造半現 IS ’可抑制B階化後的半導體晶圓“二的 故可使+導體晶圓薄膜化，可獲得更高功 ^^ 置。另外，根據本發明，可不使用溶劑、另外 而於短時間内形成薄膜的接著劑層，了… 量及揮發性有機化合物(voc)的對環二== 的材料。 【圖式簡單說明】 圖1為表示本發明的第1半導體襞置的製造方法的一 實施形態的示意圖。 圖2為表示本發明的第i半導體裝置的製造方法的— 實施形態的示意圖。 圖3為表示本發明的第i半導體裝置的製造方法的一 實施形態的示意圖。 圖4為表示本發明的第i半導體裝置的製造方法的一 實施形態的示意圖。 圖5為表示本發明的第1半導體裝置的製造方法的一S 106 201250873 42601pif The medium and the film are then 12·5. . Laminated and &amp; layered body. Using a vacuum laminating machine (manufactured by Nikken Morton Co., Ltd., product name: V13G), the platform temperature is grab c, the diaphragm temperature is ^, the degassing time is 2 sec, the pressurization time is 20 seconds, Under the condition of 0.5 MPa pressurization, the laminate was attached to the circuit surface of the tantalum wafer with the film-like adhesive B_12 in contact with the circuit surface. (Comparative Example 6) The adhesive varnish B-13 was spin-coated on the circuit surface of the above 11 wafer so that the film thickness after heat drying was % μη, and the hot plate of rc was dried for 10 minutes. Example 7) The liquid photosensitive adhesive B 2 was spin-coated on the above # _ circuit surface so as to have a film thickness of 35 μm, and was produced by a high-precision parallel exposure machine (ORC-nu-Ba) at 25 ΐ and m. (Product Name)) Exposure was performed at 1000 mJ/cm 2 (Comparative Example 8) The liquid photosensitive adhesive B_3 was spin-coated on the circuit surface of the above-mentioned tantalum wafer so as to have a film thickness of 35 μm. The film was exposed at 1000 mJ/cm 2 by a high-precision parallel exposure machine (manufactured by ORC, γΕΧμ_ιι 72-Β-〇〇 (product name)) under air. The bumps when forming the adhesive layer were as follows. The pores, the warpage after the grinding, the visible light transmittance, the bump outcrop, the substrate connectivity, and the wafer connectivity were evaluated. The results are shown in Table 7. <The pores in forming the adhesive layer> 107 201250873 ^zouxpif Visually and microscopically confirm the above-mentioned adhesive attached The formation of the germanium wafer has the pores of the bump layer of the adhesive layer, and is evaluated according to the following criteria. A: There is no pore around the bump. B: There is a small amount of pores around the bump. &lt;After grinding龟曲> The following back-grinding tape 贴 is bonded to a wafer having a carrier layer formed on the same wafer as described above on a 6-pair wafer (thickness 625 μη〇), and a back grinding device (Disco Co., Ltd.) is used. Manufacturing, product name: DBG8540) Grinding to a thickness of 5G μηι 4 After the ground wafer is placed on a flat stage, the height of the wafer is measured and evaluated according to the following criteria: A: Wafer The starting curve is less than 1 〇mm. B: The light curve of the wafer is 1 〇mm or more. (Back grinding tape A) The solution of 2-enoic acid 2-ethylhexyl acrylate and methyl acrylate is obtained by solution polymerization. An acrylic copolymer which is a main monomer and uses hydroxymethanone as a functional group monomer. The "copolymer has a weight average molecular weight of 400,000 and a glass transition point of 8 C. The f-circle is relative to the acrylic acid system. Copolymer 1 〇〇 mass part of compounding (7) parts by mass of polyfunctional isophthalic acid ester cross-linking (The adhesive solution prepared by the Polyurethane Industry (manufactured by the company, product name: Coronate HL) is applied to the polyfoam film (thickness 150 μπ〇) in the form of adhesion #1 thickness wire H) (4) during drying. Drying was carried out. Further, a biaxially stretched polyester film separator (having a thickness of 25 μm) coated with a pin release agent was laminated on the adhesive surface of 201200873 4260 lpif. The adhesive film was placed at room temperature. The aging was sufficiently carried out for one week, and it was used for the test as the back grinding tape A. &lt;Visible light transmittance&gt; An adhesive layer having a total film thickness of % _ is formed on a PEy (polyethylene terephthalate) film in the same order as in the case of producing a semiconductor wafer with an adhesive layer. A film for measurement was obtained. The obtained film for measurement was peeled off from the PET, and the transmittance of 4 〇〇 nm to 8 〇〇 nm was measured using a spectrophotometer (product name: U-3310, manufactured by Hitachi High-Tech Co., Ltd.), and evaluated according to a standard. A: The maximum value of the transmittance is 20% or more. B: The maximum value of the transmittance is less than 2 〇〇 / 〇. <Bump outcrop> The following criteria for judging the bump of the bump electrode tip of the semiconductor wafer with the adhesive layer obtained in the same manner as described above were evaluated by the microscope. Ding 腼 $ press A: Bump outcrop, confirm the top of the bump. B. The outcrop of the bump is not sufficient, and the top end of the bump cannot be confirmed. <Substrate Connectivity> The following article is used as a supporting member for mounting a semiconductor element: a steel wiring pattern in which a film is formed by a flux treatment, a surface of a glass (four) substrate, and a sample of the SR image. 1 and Comparative Example 6 and Comparative Example 7 were prepared in the same manner as in the evaluation of "the pores in the formation of the pores". The conductor wafer with the adhesive layer = 109 1 201250873 42Wlplf was prepared, and the adhesive was cut along the cutting line. The semiconductor day # of the layer, mmX.3mm, and the = i of the joint, and as the first step, the holder (the Panasonic production technology) is manufactured by the company which has a lower point than the bright point and is less lead-free solder. With a load of 25 N, the temperature of the upper portion (platform temperature: with the support member 2 for the semiconductor wafer member f with the adhesive layer attached thereto: the temperature of the two sides = the connection portion becomes less = tin:: ίί = = temperature, ... load = type thermocouple clamped in half "heart == two::: adhesive - body element mounted _ pieces equipped with cattle: = = body film peeling. Use flip chip holder to 25 Ν The weight of the load, just the c's degree will be attached with a film-like adhesive substrate 0 〒 two: half And fixed on the substrate. Then: =: 相同 one step and the second step are the same operation to make a sample. One 辻 confirms the conduction of 328 菊 魏 辻 , , , , , , , , , 基准 基准 基准 基准 基准 基准 基准 基准 基准 基准 基准 基准 基准 基准 基准 基准 基准In the cross-section, the mixing of the filler was not observed in the wide connection section. B. The portion where the conduction was poor was observed. The filler 〇110 was observed in the connection section. 201250873 42601pif mixing <wafer connectivity> The same as that obtained above. The semiconductor circle with the adhesive layer and the other semi-conductors make the dU continuous press machine, and the connection is set for the square of the 2耽, which is less than the material, and the wafer bonding. = / cutting step, observe the separated 曰I ir observation, and observe the priming benchmark to confirm the mixing of the wafer connectivity B. 士 Indeed "heart to connection" in the joint profile is not observed in the filler In the case where there is a poor connection, the filler (the shear strength to the substrate) is observed in the joint profile to form the same adhesive layer as the above-obtained tantalum wafer with the adhesive layer obtained by Spin coating (2 〇〇 rpm / 1 〇 s, 4 〇〇〇 rpm / 2 〇 s) The liquid photosensitive adhesive was applied to the ruthenium wafer so as to have a total thickness of 35 μm. The laminated film was laminated on the obtained coating film. The release-treated PET film was exposed at 1000 mj/cm 2 by a high-precision parallel exposure machine (manufactured by ORC), and then the wafer was cut out at a cost of $ mmx5. The etched ruthenium-attached wafer was bonded to an organic substrate (PSR-4000, SR-AUS308, 0.2 mmt) at 175 under conditions of 0.5 MPa and 10 seconds. (: Evaluation sample was obtained by applying post-hardening for 2 hours. The evaluation sample was held on a 265-inch hot plate for 30 seconds using a shear adhesion tester "Dage-4000" (product name), and the wafer and the organic substrate were bonded. The shear strength was measured by the measurement of the thickness of the film. The amount of the coating film was the same as that of the comparative example 4 and the comparative example 5. The formation of the above-mentioned coating film was carried out. The above shear strength is less than J 〇MPa f. The industry's availability j. According to the current day and month, it is not necessary to form the next sword layer. # The semiconductor with the adhesive layer is obtained by the exposure wire. The gradation can greatly reduce the number of semiconductor wafers after the B-stage can be suppressed by the fabrication of the semi-current IS', so that the +conductor wafer can be thinned and higher work can be obtained. Further, according to the present invention An adhesive layer which does not use a solvent and which forms a film in a short time, and a material of a ring-to-ring == of a volatile organic compound (voc). [Simplified illustration of the drawing] FIG. 1 shows the present invention. Manufacturer of the first semiconductor device Fig. 2 is a schematic view showing an embodiment of a method for manufacturing an i-th semiconductor device according to the present invention. Fig. 3 is a view showing an embodiment of a method for manufacturing an i-th semiconductor device according to the present invention. 4 is a schematic view showing an embodiment of a method of manufacturing the i-th semiconductor device of the present invention. FIG. 5 is a view showing a method of manufacturing the first semiconductor device of the present invention.

S 112 201250873 4260 lpif 實施形癌的不意圖。 圖6為表示本發明的第1半導體裝置的製造方法的一 實施形態的不意圖。 圖7為表示本發明的第1半導體裝置的製造方法的一 實施形態的示意圖。 圖8為表示本發明的第1半導體裝置的製造方法的一 實施形態的示意圖。 圖9為表示本發明的第1半導體裝置的製造方法的一 實施形態的示意圖。 圖10為表示本發明的第1附有半導體元件的半導體晶 圓的一實施形態的示意圖。 圖11為表示本發明的第1半導體裝置的一實施形態的 示意圖。 圖12為表示本發明的第1半導體裝置的其他實施形態 的示意圖。 圖13為表示本發明的第2半導體裝置的製造方法的一 實施形態的示意圖。 圖14為表示本發明的第2半導體裝置的製造方法的一 實施形態的示意圖。 圖15為表示本發明的第2半導體裝置的製造方法的一 實施形態的示意圖。 圖16為表示本發明的第2半導體裝置的製造方法的一 實施形態的示意圖。 圖17為表示本發明的第2半導體裝置的製造方法的一 113 201250873 4/ουιριχ 實施形態的示意圖。 圖18為表示本發明的第2半導體裝置的製造方法的一 實施形態的示意圖。 圖19為表示本發明的第2半導體裝置的製造方法的一 貫施形悲的不意圖。 圖20為表示本發明的第2半導體裝置的製造方法的一 實施形態的示意圖。 圖21為表示本發明的第1半導體晶圓積層體的製造方 法的一實施形態的示意圖。 圖22為表示本發明的第1半導體晶圓積層體的製造方 法的一實施形態的示意圖。 圖23為表示本發明的第3半導體裝置的製造方法的一 實施形態的示意圖。 圖24為表示本發明的第3半導體裝置的製造方法的一 實施形態的示意圖。 圖25為表示本發明的第4半導體裝置的製造方法的一 實施形態的示意圖。 圖26為表示本發明的第4半導體裝置的製造方法的一 實施形悲的不意圖。 圖27為表示本發明的第4半導體裝置的製造方法的一 實施形態的示意圖。 圖28為表示本發明的第4半導體裝置的製造方法的一 實施形態的示意圖。 圖29為表示本發明的第4半導體裝置的製造方法的一S 112 201250873 4260 lpif The intention of implementing cancer. Fig. 6 is a schematic view showing an embodiment of a method of manufacturing a first semiconductor device of the present invention. Fig. 7 is a schematic view showing an embodiment of a method of manufacturing a first semiconductor device of the present invention. Fig. 8 is a schematic view showing an embodiment of a method of manufacturing a first semiconductor device of the present invention. Fig. 9 is a schematic view showing an embodiment of a method of manufacturing a first semiconductor device of the present invention. Fig. 10 is a schematic view showing an embodiment of a semiconductor wafer with a semiconductor element according to the first aspect of the present invention. Fig. 11 is a schematic view showing an embodiment of a first semiconductor device of the present invention. Fig. 12 is a schematic view showing another embodiment of the first semiconductor device of the present invention. Fig. 13 is a schematic view showing an embodiment of a method of manufacturing a second semiconductor device of the present invention. Fig. 14 is a schematic view showing an embodiment of a method of manufacturing a second semiconductor device of the present invention. Fig. 15 is a schematic view showing an embodiment of a method of manufacturing a second semiconductor device of the present invention. Fig. 16 is a schematic view showing an embodiment of a method of manufacturing a second semiconductor device of the present invention. Fig. 17 is a view showing an embodiment of a method of manufacturing a second semiconductor device according to the present invention. Fig. 18 is a schematic view showing an embodiment of a method of manufacturing a second semiconductor device of the present invention. Fig. 19 is a view showing the singularity of the method of manufacturing the second semiconductor device of the present invention. Fig. 20 is a schematic view showing an embodiment of a method of manufacturing a second semiconductor device of the present invention. Fig. 21 is a schematic view showing an embodiment of a method of producing a first semiconductor wafer laminate according to the present invention. Fig. 22 is a schematic view showing an embodiment of a method of producing a first semiconductor wafer laminate according to the present invention. Fig. 23 is a schematic view showing an embodiment of a method of manufacturing a third semiconductor device of the present invention. Fig. 24 is a schematic view showing an embodiment of a method of manufacturing a third semiconductor device of the present invention. Fig. 25 is a schematic view showing an embodiment of a method of manufacturing a fourth semiconductor device of the present invention. Fig. 26 is a schematic view showing the implementation of the fourth semiconductor device manufacturing method of the present invention. Fig. 27 is a schematic view showing an embodiment of a method of manufacturing a fourth semiconductor device of the present invention. Fig. 28 is a schematic view showing an embodiment of a method of manufacturing a fourth semiconductor device of the present invention. Fig. 29 is a view showing a method of manufacturing a fourth semiconductor device of the present invention;

114 201250873 4260 lpif 貫施形態的不意圖。 圖30為表示本發明的第4半導體裝置的製造方法的一 實施形態的示意圖。 圖31為表示本發明的第4半導體裝置的製造方法的一 實施形態的示意圖。 圖32為表示本發明的第4半導體裝置的製造方法的一 貫施形態的不意圖。 【主要元件符號說明】 4 :膠帶 5:液狀感光性接著劑 6、6a、6b、7、8、8a :接著劑層 9:曝光裝置 10、16、50、5卜 52、54、56、58 :半導體晶圓 10a、16a、52a、56a :半導體晶片 12 :金屬凸塊 14 :焊錫球 15 :支撐構件 18 :密封樹脂層（再配線層） 20 :箱 21 :吸引夾具 30 :膠帶（背面研磨膠帶） 31 :基材 32 :黏著層 34 :研磨裝置 115 201250873. 36 :膠帶（切割膠帶） 37 :切割刀 40、44 :附有接著劑層的半導體元件 54 :半導體晶圓 60、62 :半導體晶圓積層體 70 :附有半導體元件的半導體晶圓 80、100、110、120、130、140 :半導體裝置 S1 :半導體晶圓電路面114 201250873 4260 lpif is not intended. Fig. 30 is a schematic view showing an embodiment of a method of manufacturing a fourth semiconductor device of the present invention. Fig. 31 is a schematic view showing an embodiment of a method of manufacturing a fourth semiconductor device of the present invention. Fig. 32 is a schematic view showing a first embodiment of a method of manufacturing a fourth semiconductor device of the present invention. [Description of main component symbols] 4: Tape 5: liquid photosensitive adhesive 6, 6a, 6b, 7, 8, 8a: adhesive layer 9: exposure devices 10, 16, 50, 5, 52, 54, 56, 58 : semiconductor wafer 10a, 16a, 52a, 56a: semiconductor wafer 12: metal bump 14: solder ball 15: support member 18: sealing resin layer (rewiring layer) 20: case 21: suction jig 30: tape (back Abrasive tape) 31: Substrate 32: Adhesive layer 34: Grinding device 115 201250873. 36: Tape (cut tape) 37: Cutter 40, 44: Semiconductor element 54 with an adhesive layer: Semiconductor wafer 60, 62: Semiconductor wafer laminate 70: semiconductor wafers 80, 100, 110, 120, 130, 140 with semiconductor elements: semiconductor device S1: semiconductor wafer circuit surface

S 116S 116

Claims (1)

201250873 4260 lpif 七、申請專利範圍： 1. 一種半導體裝置的製造方法，包括以下步驟： lit::成有金屬凸塊的電路面之半導體晶圓的上述 电㈣上塗佈液狀感光性接著劑，形成感光性接著劑層； 猎由光照射使上述感光性接著劑層B階化獲得附有 接著劑層的半導體晶圓； 有 半導體晶圓之半導體晶圓與接 者劑層一併切斷，切分成多個半導體元件 劑層的半導體元件；以及 將上述附有接著_的半導體元狀接料層爽在上 述附有接著劑層的半導體元件與其他半導體元件之間 述附有接著劑層的半導體元件與半導體元件搭制&amp; 2‘如申請專利範圍第1項所述之半導體裝置的製造 法，其中上述液狀感光性接著劑含有放射線聚合性 化合物、（B)光起始劑及（c)熱硬化性樹脂，Λ 上述（Α)成分含有於25C為液狀且分子内具有一 碳-碳雙鍵的化合物。 μ ~ ® 3. 如申請專利範圍第1項或第2項所述之半導體裝置 的製造方法，其中上述液狀感光性接著劑的溶劑含量為5 質量％以下或不含溶劑。 ” 4. 如申請專利範圍第1項至第3項中任—項所述之 導體裝置的製造方法，其中上述液狀感光性接著劑於25。^ 的黏度為 10 niPa*s〜30000 mPa.s。 117 201250873 *t^uuipn 道触壯口申請專利範圍第1項至第4項甲任一項所述之半 +.#二置的製造方法’其巾藉由光照射進行8階化後的上 述感光性接著劑層於饥的黏著強度為2〇Ggf以下。 6.如申請專利範圍“項至第$項中任一項所述之半 f體裝置的製造方法，其帽倾塗絲塗佈 光性接著劑。 々7. —種半導體裝置，其是藉由如申請專利範圍第^項 至第6項中任一項所述之方法而獲得。 8. 一種附有半導體元件的半導體晶圓的製造方法，包 括以下步驟： 於具有形成有金屬凸塊的電路面之半導體晶圓的上述 路面上塗佈液狀感光性接著劑，形成感光性接著劑層； 藉由光照射使上述感光性接著劑層B階化，獲得附有 接著劑層的半導體晶圓； —將上述附有接著劑層的半導體晶圓之半導體晶圓與接 ，劑層-併切斷’切分成多個半導體元件，獲得附有接著 劑層的半導體元件；以及 將上述附有接著劑層的半導體元件之接著劑層夾在第 2半導體晶®與上述附有接著劑層的半導體元件之間並進 行壓接。 9.如申請專利範圍第8項所述之附有半導體元件的半 導體晶圓的製造方法’其中上述液狀感光性接著劑含有 (A)放射線聚合性化合物' (b)光起始劑及 献 化性樹脂， … S 118 201250873 4260 lpif 上述（A)成分含有於25¾為液狀且分子内具有一個 碳-碳雙鍵的化合物。 10·如申請專利範圍第8項或第9項所述之附有半導 體元件的半導體晶_製造方法，其中上狀感光性接 著刎的/谷劑含置為5質量％以下或不含溶劑。 11. 如申請專利範圍第8項至第1〇項中任一項所述之 附有半導體元件的半導體晶_製造方法，其中上述液狀 感光性接著劑於25。(：的黏度為1〇 mPa.s〜3〇〇〇〇地朽。 12. 如申請專利範㈣8項至第i i項中任一項所述之 附有料體it件的半導體晶_製造方法，其中藉由光照 ^订B階化後的上觀紐接著綱於坑的黏著強 度為200 gf以下。 13. 如巾請專利制第8項至第12項中任—項所述之 附有半導體元件的半導㈣曰圓 本f B_製造綠，其+藉由旋塗 法來塗佈上述液狀感光性接著劑。 玉 14. 一種附有半導體元件 申續袁刹牛導體日日0其是藉由如 ^月專㈣圍第8項以13項中任—項所述之方法而獲 括以ί5步驟種财接著劑㈣”體晶圓的製造方法，包 於具有形成有金屬凸塊的電路面之半導體 ，形成感光^著=層 藉由光照射使上述感光性接著劑層㈣化。 119 201250873 4^0Ulpif ’如申清專利範圍第15項所述之附有接著劑層的半 ^ -B曰圓的ft造方法’其中上述液狀感級接著劑含有 (A)放射、線聚合性化合物、（B)光起始劑及（C)熱硬 化性樹脂， 上述（A)成分含有於25&lt;t為液狀且分子内具有一個 碳·碳雙鍵的化合物。 # 17’如申請專利範圍第I5項或第I6項所述之附有接 著劑層的半導體晶®的製造方法，其巾上述液狀感光性接 著劑的溶劑含量為5質量％以下衫含溶劑。 18. 如申請專利範圍第15項至第口項中任一項所述 之附有接著綱的半導體晶_製造総，其中上述液狀 感光性接著劑於25t：的黏度為1〇 mPa.s〜3〇〇〇〇 mpa.s。 19. 如申請專利範圍第15項至第18項中任一項所述 之附^接著劑層的半導體晶®的製造方法，其中藉由光照 射進仃B p皆化後的上述感光性接著劑層於坑的黏著強 度為200 gf以下。 20. 如申請專利範圍第15項至第19項中任一項所述 之附有接著#1層的半導體晶圓的製造方法，其巾藉由旋塗 法來塗佈上述液狀感光性接著劑。 ^ 21· —種附有接著劑層的半導體晶圓，其是藉由如申 明專利fe圍第15項至第20項中任一項所述之方法而獲得。 22· —種半導體裝置的製造方法，包括以下步驟： 於具有形成有金屬凸塊的電路面之第丨半導體晶圓的 上述電路Φ上㈣液狀感紐接著劑，形絲光性接著劑 S 120 201250873 42601pif 層； 劑層B階化，獲得附有 藉由光照射使上述感光性接著 接著劑層的半導體晶圓； 將上述附有接著劑層的半導體晶圓之接著劑層夾在上 劑口，θθ圓與第2半導體晶圓“並進 灯屋接，獲付+導體晶圓積層體；以及 切分成積層有半導體 將上述半導體晶圓積層體切斷 元件的半導體元件積層體。 、23.如申請專利範圍第22項所述之半導體裝置的製造 ，法其中上述液狀感光性接著劑含有⑷放射線聚合 性化合物、（B)光起始劑及（c)熱硬化性樹脂， 上述（A)成分含有於25它為液狀且分子内且個 碳-碳雙鍵的化合物。 24. 如申請專利範圍第22項或第23項所述之半導體 裝置的製造方法’其中上述液狀感光性接著義溶劑含量 為5質1%以下或不含溶劑。 25. 如申請專利範圍第22項至第24項中任一項所述 之半導體裝置的製造方法，其中上述液狀感光性接著劑於 25°C 的黏度為 l〇mpa.s 〜3〇〇〇〇mpa.s。 26. 如申請專利範圍第22項至第25項中任一項所述 之半導體裝置的製造方法，其中藉由光照射進行3階化後 的上述感光性接著劑層於25eC的黏著強度為2〇〇gf以下。 27·如申請專利範圍第22項至第26項中任一項所述 之半導體裝置的製造方法，其中藉由旋塗法來塗佈上述液 121 201250873 ifZOUipif 狀感光性接著劑。 28. —種半導體裝置，其是 項至第27财任—賴述之妓崎得Γ㈣圍第22 驟况—種半導體晶圓積層體的製造方法，包括以下步 於具有形成有金屬凸塊的電路面之第 上述電路面上％蚀、方你忒本,U· ία _ &amp; 1半導體晶圓的 層； 一|工设有劑，形成感光性接著劑 4猎由光照射使上述感紐接著劑層B階化， 接著劑層的半導體晶圓；以及 又、有 將上述附有接著劑層的半導體晶圓之接著劑層失在上 述附有接著劑層的半導齡圓與第2半賴晶^間並進 行壓接’獲得半導體晶圓積層體。 ,30.如申請專利範圍第29項所述之半導體晶圓積層體 的製造方法，其中上述液狀感光性接著劑含有（A)放射 線聚合性化合物、（B)光起始劑及（C)熱硬化性樹脂， 上述（A)成分含有於25°C為液狀且分子内具有一個 碳-碳雙鍵的化合物。 31. 如申請專利範圍第29項或第30項所述之半導體 晶圓積層體的製造方法，其中上述液狀感光性接著劑的溶 劑含量為5質量％以下或不含溶劑。 32. 如申請專利範圍第29項至第31項中任一項所述 之半導體晶圓積層體的製造方法，其中上述液狀感光性接 著劑於25°C的黏度為l〇mPa.s〜30000 mPa.s。 122 201250873 42601pif 33. 如申請專利範圍第29項至第巧項中任一項所述 之半導體晶I]積層體的製造方法，其中藉由絲射進行B 階化後的上述感級接著劑躲25t的轉強度為2〇〇 gf 以下。 34. 如申請專利範圍S 29項至第33項中任一項所述 之半導體日I®積層體的製造方法’其巾#由餘法來塗佈 上述液狀感光性接著劑。 35. 種半導體晶圓積層體，其是藉由如申請專利範 圍第29項至第34項中任一項所述之方法而獲得。 36. —種半導體裝置的製造方法，包括以下步驟： 於具有形成有金屬凸塊的電路面之半導鲈a圓的卜沭 電路面上，塗佈兩独上躲减紐接著^對塗膜進 行光照射，藉此設置經B階化的接著劑層，獲得附有接著 劑層的半導體晶圓，上述經B階化的接著劑層具有2層以 上的構造且最表面層含有助焊劑成分； 將上述附有接著劑層的半導體晶圓之半導體晶圓與接 著劑層一併切斷，切分成多個半導體元件，獲得附有j妾著 劑層的半導體元件；以及 將上述附有接著劑層的半導體元件之接著劑層夾在上 述附有接著劑層的半導體元件與其他半導體元件之間或上 述附有接著劑層的半導體元件與半導體元件搭载用支撐構 件之間並進行壓接。 37‘如申請專利範圍第36項所述之半導體裝置的製造 方法，其中形成上述最表面層的液狀感光性接著劑包含 3 123 201250873 426Ulpif (A)放射線聚合性化合物、（B)光起始劑及（F)助焊劑 成分， 上述（A)成分含有於25〇c為液狀且分子内具有一個 碳-碳雙鍵的化合物。 38.如申請專利範圍第36項或第37項所述之半導體 裝置的製造方法’其中上述經B階化的接著劑層包含上述 最表面層及内層， 形成上述内層的液狀感光性接著劑含有（A)放射線 聚合性化合物、⑻缺始劑及（C)熱硬化性樹脂， 上述（A)成分含有於25°C為液狀且分子内具有一個 碳-碳雙鍵的化合物。 &gt;39·如申請專利範圍第36項至第38項中任一項所述 之半導體裝置的製造方法，其中上述兩種以上的液狀感光 f生接著劑的溶劑含量為5質量％以下或不含溶劑。 4〇.如申請專利範圍第36項至第39項中任一項所述 之半導體裝置的製造方法，其中上述兩種以上的液狀感光 性接著劑於25Ϊ的黏度為1〇 mPa.s〜3〇〇〇〇 mpa#s。 41. 如申請專利範圍第36項至第40項中任一項所述 之半導體裝置的製造方法，其中上述㈣階化的接著劑層 於25°C的黏著強度為2〇〇gf以下。 42. 如申請專利範圍第36項至第41項中任一項所述 之半導體裝置的製造方法，其中藉由旋塗法來塗佈上述兩 種以上的液狀感光性接著劑。 43. -種半導體裝置’其是藉由如申請專利範圍第％ 124 S 201250873 4260 lpif 項至第42項中任一項所述之方法而獲得。 44. 一種附有半導體元件的半導體晶圓的製造方法， 包括以下步驟： 於具有形成有金屬凸塊的電路面之半導體晶圓的上述 ，路面上，塗佈兩種以上的液狀感光性接著劑及對塗膜進 行光照射，藉此設置經B階化的接著劑層，獲得附有接著 劑層的半導體晶圓，上述經3階化的接著劑層具有2層以 上的構造且最表面層含有助焊劑成分； ^將上述附有接著劑層的半導體晶圓之半導體晶圓與接 著劑層一併切斷，切分成多個半導體元件，獲得附有^著 劑層的半導體元件；以及 “將上述附有接著劑層的半導體元件之接著劑層夾在第 2半導體晶圓與上述附有接著劑層的半導體元件之 行壓接。 、45.如申請專利範圍第44項所述之附有半導體元件的 半導體晶圓的製造方法，其中形成上述最表面層的液狀感 光性接著劑含有（A)放射線聚合性化合物、（B)光起妒 劑及⑺助焊劑成分， 上述（A)成分含有於25t;為液狀且分子内具有—個 峻、碳雙鍵的化合物。 46.如申請專利範圍第44項或第45項所述之附有半 導體元件的半導體晶圓的製造方法，其中上述經B階化的 接著劑層包含上述最表面層及内層， 形成上述内層的液狀感光性接著劑含有（A)放射線 125 201250873 426Ulpif 小口性化合物、（B)光起始劑及（c)熱硬化性樹脂， 上述（A)成分含有於饥為液狀且分子 〆個 碳-碳雙鍵的化合物。 〃 47. 如申請專利範圍第糾項至第奶項中任一項所述 之附有半導體元件的半導體製造方法，其中上述兩 種以上的液狀感紐接著劑的溶劑含量為$質量％以下或 不含溶劑。 48. 如申請專利範圍帛Μ項至第π項中任一項所述 之附有半導體元件料導體晶_製造方法，其中上述兩 種以上的綠感紐接著劑於坑義度為[mpa.s〜 30000 mPa.s。 49·如申請專利範圍第44項至第48項中任一項所述 之附有半賴元件料導體晶_製造方法，其中上述經 B階化的接|劑層於饥的黏著強度為2〇〇#以下。 50.如申請專利範圍第44項至第49項中任&lt;項所述 之附有半導體元件料導體晶義製造方法，其中藉由旋 塗法來塗佈上述兩種以上的液狀感光性接著劑。 曰^ 一種附有半導體元件的半導體晶圓的製造方法， 其是藉由如申請專利範圍第44項至第50項中任一項所述 之方法而獲得。 、 52. —種附有接著劑層的半導體晶圓的製造方法，包 括以下步驟： ,於具有形成有金屬凸塊的電路面之半導體晶圓的上述 電路面上，塗佈兩種以上的液狀感光性接著劑及對塗膜進 δ 126 201250873 42601pif 仃光照射，藉此設置經B p#化的接著綱， 的接著劑層具有2層以上的構造且最表面層含有助焊= 分。 53.如申請專利範圍第52項所述之附有接著劑層的半 =晶_製造方法，其中形成上述最表面層的液狀感光 性接者劑含有（A)放射線聚合性化合物、⑻光起 及（F)助焊劑成分， 上述（A)成分含有於25°c為液狀且分子内具個 碳-碳雙鍵的化合物。 54·如申請專利範圍帛52項或第53項所述之附有接 ^劑層的半導體晶圓的製造方法，其中上述經⑽化的接 著劑層包含上述最表面層及内層， 形成上述内層的液狀感光性接著劑含有（a)放射線 聚合性化合物、⑻光起關及（c)熱硬化性樹脂， 上述（A)成分含有於坑為液狀且分子内呈個 碳-碳雙鍵的化合物。 55. 如申請專利範圍第52項至第％項中任一項所述 之附有接著劑層的半導體晶_製造方法，其中上述兩種 以上的液狀感紐接著劑的溶劑含量為5質量％或不 含溶劑。 56. 如申請專利範圍第52項至第％項中任一項所述 之附有接著的半導料_製造方法，其中上述兩種 以上的液狀感光性接著劑於坑的黏度為ι〇抑的〜 30000 mPa#s ° 127 201250873 ^/ouipif 之附ί接工第52項至第56項中任-項所述 階化的接著劑;圓的製造方法，其中上述經B W曰於25 c的黏著強度為2〇〇 gf以下。 之附請專利範圍第52項至第57項中任一項所述 的半導體晶圓的製造方法，其中藉由旋塗 〃佈上述兩種以上的液狀感光性接著劑。 59. —種附有接著劑層的半導體晶圓，其是藉由如申 請專利範ϋ第52項至第％項中任—項所述之方法而獲得。 60. 種半導體裝置的製造方法，包括以下步驟： 於具有形成有金屬凸塊的電路面之第！半導體晶圓的 上述電路面上，塗佈兩種以上的液狀感光性接著劑及對塗 膜進行光照射，藉此設置經B階化的接著劑層，獲得附有 接著劑層的半導體晶圓，上述經B階化的接著劑層具有2 層以上的構造且最表面層含有助焊劑成分； 將上述附有接著劑層的半導體晶圓之接著劑層夾在上 述附有接著劑層的半導體晶圓與第2半導體晶圓之間並進 行壓接，獲得半導體晶圓積層體；以及 將上述半導體晶圓積層醴切斷’切分成積層有半導體 元件的半導體元件積層體。 61.如申請專利範圍第60項所述之半導體裝置的製造 方法’其中形成上述最表面層的液狀感光性接著劑含有 (A)放射線聚合性化合物、（B)光起始劑及（F)助焊劑 成分， 上述（A)成分含有於25°C為液狀且分子内具有一個 δ 128 201250873 4260 lpif 石炭-碳雙鍵的化合物。 62. 如申請專利範圍第60項或第61項所述之半導體 裝置的製造方法’其中上述經B階化的接著劑層包含上述 最表面層及内層， 形成上述内層的液狀感光性接著劑含有（A)玫射線 聚合性化合物、（B)光起始劑及（C)熱硬化性樹脂， 上述（A)成分含有於25 C為液狀且分子内具有—個 碳-碳雙鍵的化合物。 63. 如申請專利範圍第60項至第62項中任一項所述 之半導體裝置的製造方法，其中上述兩種以上的液狀咸光 性接著劑的溶劑含量為5質量％以下或不含溶劑。 64·如申請專利範圍第60項至第63項中任一項所述 之半導體裝置的製造方法’其中上述兩種以上的液狀咸光 性接著劑於25。(：的黏度為1〇 mpa.s〜30000 mPa.s。 65. 如申請專利範圍第60項至第64項中任一項所述 之半導體裝置的製造方法，其中上述經B階化的接著劑層 於的黏著強度為200 gf以下。 66. 如申請專利範圍第60項至第65項中任一項所述 之半導體裝置的製造方法，其中藉由旋塗法來塗佈上述兩 種以上的液狀感光性接著劑。 67. —種半導體裝置，其是藉由如申請專利範圍第6〇 項至第66項中任一項所述之方法而獲得。 68. —種半導體晶圓積層體的製造方法’包括以下牛 驟： 129 201250873 πζουιριΐ 於具有形成有金屬凸塊的電路面之第1半導體晶圓的 上述電路面上’塗佈兩種以上的液狀感光性接著劑及對塗 膜進行光照射’藉此設置經Β階化的接著劑層，獲得附有 接著劑層的半導體晶圓，上述經Β階化的接著劑層具有2 層以上的構造且最表面層含有助焊劑成分；以及 將上述附有接著劑層的半導體晶圓之接著劑層夾在上 述附有接著劑層的半導體晶圓與第2半導體晶圓之間並進 行壓接，獲得半導體晶圓積層體。 69,如申請專利範圍第68項所述之半導體晶圓積層體 的製造方法’其中形成上述最表面層的液狀感光性接著劑 含有（Α)放射線聚合性化合物、（β)光起始劑及（f)助 焊劑成分， 上述（Α)成分含有於25°C為液狀且分子内具有一個 碳-碳雙鍵的化合物。 70_如申請專利範圍第68項或第69項所述之半導體 晶圓積層體的製造方法，其中上述經B階化的接著劑層包 含上述最表面層及内層， 形成上述内層的液狀感光性接著劑含有（A)放射線 聚合性化合物、（B)光起始劑及（c)熱硬化性樹脂， 上述（A)成分含有於25°C為液狀且分子内具有一個 碳-碳雙鍵的化合物。 71.如申凊專利範圍第68項至第70項中任一項所述 之半導體晶圓積層體的製造方法，其中上述兩種以上的液 狀感光性接著劑的溶劑含量為5質量％以下或不含溶劑。 s 130 201250873 42601pif 72. 如申請專利範圍第68項至第71項中任一項所述 之半導體晶圓積層體的製造方法，其中上述兩種以上的液 狀感光性接著劑於25°C的黏度為1 〇 mPa«s〜30000 mPa-s。 73. 如申請專利範圍第68項至第72項中任一項所述 之半導體晶圓積層體的製造方法，其中上述經B階化的接 著劑層於25°C的黏著強度為200 gf以下。 74. 如申請專利範圍第68項至第73項中任一項所述 之半導體晶圓積層體的製造方法，其中藉由旋塗法來塗佈 上述兩種以上的液狀感光性接著劑。 75. —種半導體晶圓積層體，其是藉由如申請專利範 圍第68項至第74項中任一項所述之方法而獲得。 131201250873 4260 lpif VII. Patent application scope: 1. A method for manufacturing a semiconductor device, comprising the steps of: lit:: coating a liquid photosensitive adhesive on the above-mentioned electric (four) of a semiconductor wafer having a circuit surface with metal bumps Forming a photosensitive adhesive layer; hunting the light to illuminate the photosensitive adhesive layer to obtain a semiconductor wafer with an adhesive layer; and the semiconductor wafer with the semiconductor wafer is cut off together with the carrier layer Dividing the semiconductor element into a plurality of semiconductor element layer; and attaching the above-mentioned semiconductor element-like layer with the adhesive layer to the semiconductor element with the adhesive layer and the other semiconductor element The semiconductor device manufacturing method according to the first aspect of the invention, wherein the liquid photosensitive adhesive contains a radiation polymerizable compound, (B) a photoinitiator, and (c) Thermosetting Resin, Λ The above (Α) component contains a compound in which 25C is liquid and has a carbon-carbon double bond in the molecule. The method for producing a semiconductor device according to the first or second aspect of the invention, wherein the liquid photosensitive adhesive has a solvent content of 5% by mass or less or no solvent. 4. The method of manufacturing a conductor device according to any one of claims 1 to 3, wherein the liquid photosensitive adhesive has a viscosity of from 10 niPa*s to 30000 mPa at 25. s. 117 201250873 *t^uuipn The application method of the two-part +.# two-position described in any one of the first to fourth items of the patent application, the towel is 8 times after being irradiated by light. The above-mentioned photosensitive adhesive layer has an adhesive strength of 2 〇Ggf or less. The manufacturing method of the semi-f body device according to any one of the items of the above-mentioned item, the cap pouring wire A light adhesive is applied. A semiconductor device obtained by the method according to any one of the above claims. A method of manufacturing a semiconductor wafer with a semiconductor element, comprising the steps of: applying a liquid photosensitive adhesive to the road surface of a semiconductor wafer having a circuit surface on which a metal bump is formed to form a photosensitive property; a layer of the photosensitive adhesive layer is B-staged by light irradiation to obtain a semiconductor wafer with an adhesive layer; and a semiconductor wafer of the semiconductor wafer with the adhesive layer is connected to the layer - cutting and cutting into a plurality of semiconductor elements to obtain a semiconductor element with an adhesive layer; and sandwiching an adhesive layer of the above-mentioned semiconductor element with an adhesive layer on the second semiconductor crystal ® and the above-mentioned adhesive The semiconductor elements of the layers are bonded together. 9. The method for producing a semiconductor wafer with a semiconductor device according to the invention of claim 8, wherein the liquid photosensitive adhesive contains (A) a radiation polymerizable compound' (b) a photoinitiator and a Resin, ... S 118 201250873 4260 lpif The above component (A) contains a compound in which 253⁄4 is liquid and has one carbon-carbon double bond in the molecule. The method for producing a semiconductor crystal according to the eighth or ninth aspect of the invention, wherein the upper photosensitive photosensitive/grain agent is contained in an amount of 5% by mass or less or contains no solvent. The method for producing a semiconductor wafer with a semiconductor element according to any one of claims 8 to 1, wherein the liquid photosensitive adhesive is at 25. (The viscosity of the material is 1 〇 mPa.s to 3 〇〇〇〇 。. 12. The semiconductor crystal _ manufacturing method with the material one piece according to any one of the items (4) to (ii), The adhesion strength after the B-stage is determined by the illumination, and the adhesion strength of the pit is less than 200 gf. 13. The semiconductor attached to the item No. 8 to 12 of the patent application system is attached. The semiconductor semi-conducting (four) 曰 round f b_ manufacture green, and the liquid photosensitive adhesive is applied by spin coating. Jade 14. A semiconductor component is attached to the Yuan Braun cattle conductor. The manufacturing method of the wafer is formed by the method of manufacturing the wafer by the method of the first item of the item (4), and the method of manufacturing the metal wafer. The semiconductor of the circuit surface forms a photosensitive layer to smear the photosensitive adhesive layer by light irradiation. 119 201250873 4^0Ulpif 'Half of the adhesive layer as described in claim 15 of the patent scope ^ - B round ft method 'where the above liquid level adhesive contains (A) radiation, linear polymerizable compound, (B) The initiator (C) is a thermosetting resin, and the component (A) contains a compound in which 25 is liquid and has one carbon-carbon double bond in the molecule. #17' In the method for producing a semiconductor crystal® with an adhesive layer as described in Item I6, the liquid content of the liquid photosensitive adhesive is 5% by mass or less, and the solvent is contained in the shirt. The semiconductor crystal according to any one of the above-mentioned items, wherein the liquid photosensitive adhesive has a viscosity at 25t: 1 〇 mPa.s to 3 〇〇〇〇 mpa.s. The method for producing a semiconductor crystal layer of the adhesive layer according to any one of claims 15 to 18, wherein the photosensitive adhesive is formed by light irradiation The adhesion strength of the layer to the pit is 200 gf or less. 20. The method for manufacturing a semiconductor wafer with a #1 layer as described in any one of claims 15 to 19, wherein the substrate is rotated by a spine The above liquid photosensitive adhesive is applied by coating. ^ 21·- a half with an adhesive layer A bulk wafer obtained by the method of any one of claims 15 to 20. The method for manufacturing a semiconductor device, comprising the steps of: forming a metal The above-mentioned circuit Φ of the second semiconductor wafer of the surface of the bump has a liquid-like adhesive, a mercerized adhesive S 120 201250873 42601pif layer; the agent layer is B-staged, and is obtained by irradiation with light a semiconductor wafer having a photosensitive adhesive layer; the adhesive layer of the semiconductor wafer with the adhesive layer attached thereto is sandwiched between the upper application ports, and the θθ circle and the second semiconductor wafer are "connected to the lamp housing, and the + conductor is obtained. a wafer laminate; and a semiconductor device laminate which is cut into semiconductor layers and cuts the semiconductor wafer laminate. The method of manufacturing a semiconductor device according to claim 22, wherein the liquid photosensitive adhesive comprises (4) a radiation polymerizable compound, (B) a photoinitiator, and (c) a thermosetting resin. The above component (A) contains a compound which is liquid and intramolecular and has a carbon-carbon double bond. The method for producing a semiconductor device according to claim 22, wherein the liquid photosensitive sensitizing solvent content is 5 mass% or less or contains no solvent. The method of manufacturing a semiconductor device according to any one of claims 22 to 24, wherein the liquid photosensitive adhesive has a viscosity at 25 ° C of l〇mpa.s 〜3〇〇 〇〇mpa.s. The method of manufacturing a semiconductor device according to any one of claims 22 to 25, wherein the photosensitive adhesive layer having a third order by light irradiation has an adhesive strength of 2 at 25 eC. 〇〇gf below. The method for producing a semiconductor device according to any one of claims 22 to 26, wherein the liquid 121 201250873 ifZOUipif photosensitive adhesive is applied by a spin coating method. 28. A semiconductor device, which is a method for manufacturing a semiconductor wafer laminate, which comprises the following steps in forming a metal bump; On the circuit surface, the above-mentioned circuit surface is etched, and you are smashed, U·ία _ & 1 semiconductor wafer layer; a | work agent, forming a photosensitive adhesive 4 hunting by light to make the above sense Then, the agent layer is B-staged, and the semiconductor wafer of the subsequent layer; and the adhesive layer of the semiconductor wafer with the adhesive layer attached thereto is lost to the semi-inductive circle with the adhesive layer and the second The semiconductor wafer laminate is obtained by sandwiching the wafers and performing crimping. The method for producing a semiconductor wafer laminate according to claim 29, wherein the liquid photosensitive adhesive contains (A) a radiation polymerizable compound, (B) a photoinitiator, and (C) The thermosetting resin, the component (A) contains a compound which is liquid at 25 ° C and has one carbon-carbon double bond in the molecule. The method for producing a semiconductor wafer laminate according to claim 29, wherein the liquid photosensitive adhesive has a solvent content of 5% by mass or less or no solvent. The method for producing a semiconductor wafer laminate according to any one of claims 29 to 31, wherein the liquid photosensitive adhesive has a viscosity at 25 ° C of 10 μm Pa.s. 30000 mPa.s. The method for producing a semiconductor crystal I] laminate according to any one of claims 29 to 29, wherein the level-sensitive adhesive hiding after B-staged by silking The 25t rotation strength is below 2〇〇gf. The method for producing a semiconductor day I® laminate according to any one of claims 29 to 33, wherein the liquid photosensitive adhesive is applied by a residual method. A semiconductor wafer laminate obtained by the method of any one of claims 29 to 34. 36. A method of fabricating a semiconductor device, comprising the steps of: coating a coating on a dice circuit having a semi-conducting a circle having a circuit surface on which a metal bump is formed; By performing light irradiation, a B-staged adhesive layer is provided to obtain a semiconductor wafer with an adhesive layer, and the B-staged adhesive layer has a structure of two or more layers and the outermost layer contains a flux component. And cutting the semiconductor wafer of the semiconductor wafer with the adhesive layer described above and the adhesive layer together, cutting into a plurality of semiconductor elements, obtaining a semiconductor element with a layer of the adhesive; and attaching the above The adhesive layer of the semiconductor element of the agent layer is sandwiched between the semiconductor element with the adhesive layer and the other semiconductor element or between the semiconductor element with the adhesive layer and the support member for mounting the semiconductor element, and is pressure-bonded. The method of manufacturing a semiconductor device according to claim 36, wherein the liquid photosensitive adhesive forming the outermost layer comprises 3 123 201250873 426 Ulpif (A) radiation polymerizable compound, (B) light start The agent (F) flux component, the component (A) contains a compound in which 25 〇c is liquid and has one carbon-carbon double bond in the molecule. 38. The method of manufacturing a semiconductor device according to claim 36, wherein the B-staged adhesive layer comprises the outermost layer and the inner layer, and the liquid photosensitive adhesive forming the inner layer (A) a radiation polymerizable compound, (8) a starter, and (C) a thermosetting resin, wherein the component (A) contains a compound which is liquid at 25 ° C and has one carbon-carbon double bond in the molecule. The method for producing a semiconductor device according to any one of claims 36 to 38, wherein the solvent content of the two or more liquid photosensitive f-binders is 5% by mass or less or Contains no solvent. The method for producing a semiconductor device according to any one of claims 36 to 39, wherein the two or more liquid photosensitive adhesives have a viscosity of 1 〇 mPa·s at 25 Å. 3〇〇〇〇mpa#s. The method of manufacturing a semiconductor device according to any one of claims 36 to 40, wherein the (4)-staged adhesive layer has an adhesive strength at 25 ° C of 2 〇〇 gf or less. The method for producing a semiconductor device according to any one of claims 36 to 41, wherein the two or more liquid photosensitive adhesives are applied by a spin coating method. A semiconductor device is obtained by the method of any one of the above-mentioned patents, the disclosure of which is incorporated herein by reference. 44. A method of fabricating a semiconductor wafer with a semiconductor element, comprising the steps of: applying two or more liquid photosensitivity to a surface of a semiconductor wafer having a circuit surface on which a metal bump is formed; And irradiating the coating film with light, thereby providing a B-staged adhesive layer to obtain a semiconductor wafer with an adhesive layer, and the third-order adhesive layer has a structure of two or more layers and the outermost surface The layer contains a flux component; ^ the semiconductor wafer of the semiconductor wafer with the adhesive layer is cut off together with the adhesive layer, and is divided into a plurality of semiconductor elements to obtain a semiconductor element with a coating layer; "The adhesive layer of the semiconductor element with the adhesive layer is sandwiched between the second semiconductor wafer and the semiconductor element with the adhesive layer provided thereon. 45. As described in claim 44. A method of manufacturing a semiconductor wafer with a semiconductor element, wherein the liquid photosensitive adhesive forming the outermost layer contains (A) a radiation polymerizable compound, (B) a light creping agent, and (7) The component (A) is a compound containing at least 25 t, which is liquid and has a squaring, carbon double bond in the molecule. 46. A semiconductor element as disclosed in claim 44 or 45 In the method of manufacturing a semiconductor wafer, the B-staged adhesive layer includes the outermost layer and the inner layer, and the liquid photosensitive adhesive forming the inner layer contains (A) radiation 125 201250873 426 Ulpif small-mouth compound, (B) The photoinitiator and (c) the thermosetting resin, wherein the component (A) is a compound which is hungry and has a molecular weight of a carbon-carbon double bond. 〃 47. The method for producing a semiconductor device with a semiconductor device according to any one of the preceding claims, wherein the solvent content of the two or more liquid-like adhesives is less than or equal to or less than 5% by mass or less. 48. The method of manufacturing a semiconductor element conductor crystal according to any one of the items π, wherein the two or more green-sensitive binders have a pit meaning of [mpa.s to 30000 mPa·s. Such as the scope of patent application The method according to any one of items 44 to 48, wherein the B-staged bonding agent layer has an adhesive strength of 2 〇〇# or less. The method for producing a semiconductor element material conductor crystal according to any one of the above-mentioned items, wherein the above-mentioned two or more liquid photosensitive adhesives are applied by a spin coating method. A method of manufacturing a semiconductor wafer with a semiconductor element obtained by the method according to any one of claims 44 to 50. 52. A method of manufacturing a layered semiconductor wafer includes the steps of: applying two or more liquid photosensitive adhesives and a coating film on the circuit surface of a semiconductor wafer having a circuit surface on which metal bumps are formed Into δ 126 201250873 42601pif Luminescence irradiation, whereby a B p#-based adhesive layer is provided, and the adhesive layer has a structure of two or more layers and the outermost layer contains a flux = minute. The method of manufacturing a semi-crystalline wafer with an adhesive layer according to claim 52, wherein the liquid photosensitive developer forming the outermost layer contains (A) a radiation polymerizable compound, and (8) light. And (F) a flux component, the component (A) contains a compound which is liquid at 25 ° C and has a carbon-carbon double bond in the molecule. 54. The method of fabricating a semiconductor wafer with a carrier layer according to claim 52, wherein the (10) adhesive layer comprises the outermost layer and the inner layer to form the inner layer The liquid photosensitive adhesive contains (a) a radiation polymerizable compound, (8) a light-off and (c) a thermosetting resin, and the component (A) contains a liquid in a pit and a carbon-carbon double bond in the molecule. compound of. The semiconductor crystal_manufacturing method with an adhesive layer according to any one of claims 52 to wherein the solvent content of the above two or more liquid photosensitive adhesives is 5 mass. % or no solvent. The method of manufacturing the following semi-conductive material according to any one of claims 52 to wherein the viscosity of the liquid photosensitive adhesive of the above two or more liquids in the pit is ι〇约约30000 mPa#s ° 127 201250873 ^/ouipif Attachment 接The work of the intermediate according to any of items 52 to 56; the manufacturing method of the circle, wherein the above BW 曰 25 c The adhesion strength is below 2〇〇gf. The method for producing a semiconductor wafer according to any one of the preceding claims, wherein the two or more liquid photosensitive adhesives are rubbed by spin coating. 59. A semiconductor wafer with an adhesive layer, which is obtained by the method described in any one of the items 52 to 95 of the patent application. 60. A method of fabricating a semiconductor device, comprising the steps of: forming a circuit surface having metal bumps formed thereon! On the circuit surface of the semiconductor wafer, two or more liquid photosensitive adhesives are applied and light is applied to the coating film, thereby providing a B-staged adhesive layer to obtain a semiconductor crystal with an adhesive layer. In the circle, the B-staged adhesive layer has a structure of two or more layers and the outermost layer contains a flux component; and the adhesive layer of the semiconductor wafer with the adhesive layer is sandwiched between the adhesive layer and the adhesive layer The semiconductor wafer and the second semiconductor wafer are pressure-bonded to obtain a semiconductor wafer laminate; and the semiconductor wafer laminate is cut and cut into semiconductor element laminates in which semiconductor elements are laminated. The method for producing a semiconductor device according to claim 60, wherein the liquid photosensitive adhesive in which the outermost layer is formed contains (A) a radiation polymerizable compound, (B) a photoinitiator, and (F) The flux component, the above component (A) contains a compound which is liquid at 25 ° C and has a δ 128 201250873 4260 lpif carbon-carbon double bond in the molecule. The method of manufacturing a semiconductor device according to claim 60, wherein the B-staged adhesive layer comprises the outermost layer and the inner layer, and the liquid photosensitive adhesive forming the inner layer The (A) rose ray polymerizable compound, (B) photoinitiator, and (C) thermosetting resin, wherein the component (A) is contained in a liquid state of 25 C and has a carbon-carbon double bond in the molecule. Compound. The method for producing a semiconductor device according to any one of claims 60 to 62, wherein a solvent content of the two or more liquid salty light-sensitive adhesives is 5% by mass or less or not. Solvent. The method for producing a semiconductor device according to any one of claims 60 to 63, wherein the two or more liquid salty photosensitive adhesives are at 25. The method of manufacturing a semiconductor device according to any one of claims 60 to 64, wherein the above-described B-staged process is followed by a method of manufacturing a semiconductor device according to any one of claims 60 to 64. The method of manufacturing a semiconductor device according to any one of claims 60 to 65, wherein the above two or more types are applied by a spin coating method. A liquid photosensitive adhesive. A semiconductor device obtained by the method according to any one of claims 6 to 66. 68. A semiconductor wafer laminate The manufacturing method of the body includes the following steps: 129 201250873 πζουιριΐ Applying two or more liquid photosensitive adhesives and the opposite coating on the circuit surface of the first semiconductor wafer having the circuit surface on which the metal bumps are formed The film is subjected to light irradiation. Thus, a copper layer-attached adhesive layer is provided to obtain a semiconductor wafer with an adhesive layer. The above-mentioned tantalum-based adhesive layer has a structure of two or more layers and the outermost layer contains a flux. Ingredients; and the above An adhesive layer of a semiconductor wafer with an adhesive layer is sandwiched between the semiconductor wafer with the adhesive layer and the second semiconductor wafer, and is pressure-bonded to obtain a semiconductor wafer laminate. The method for producing a semiconductor wafer laminate according to the item 68, wherein the liquid photosensitive adhesive forming the outermost layer contains (Α) a radiation polymerizable compound, (β) a photoinitiator, and (f) The flux component, the (Α) component contains a compound which is liquid at 25 ° C and has a carbon-carbon double bond in the molecule. 70_ The semiconductor wafer laminate according to claim 68 or 69 In the above method, the B-staged adhesive layer includes the outermost layer and the inner layer, and the liquid photosensitive adhesive forming the inner layer contains (A) a radiation polymerizable compound, (B) a photoinitiator, and c) a thermosetting resin, wherein the component (A) contains a compound which is liquid at 25 ° C and has one carbon-carbon double bond in the molecule. 71. As claimed in any of claims 68 to 70 Semiconductor wafer laminate In the production method, the solvent content of the two or more liquid photosensitive adhesives is 5% by mass or less or does not contain a solvent. s 130 201250873 42601pif 72. As in any one of claims 68 to 71 In the method for producing a semiconductor wafer laminate, the liquid photosensitive adhesive of the above two or more types has a viscosity at 25 ° C of 1 〇 mPa «s to 30000 mPa-s. 73. The method for producing a semiconductor wafer laminate according to any one of the preceding claims, wherein the B-staged adhesive layer has an adhesive strength at 25 ° C of 200 gf or less. The method for producing a semiconductor wafer laminate according to any one of claims 68 to 73, wherein the two or more liquid photosensitive adhesives are applied by a spin coating method. 75. A semiconductor wafer laminate obtained by the method of any one of items 68 to 74 of the patent application. 131
TW101116925A 2011-05-11 2012-05-11 Manufacturing method of semiconductor apparatus, manufacturing method of semiconductor wafer with semiconductor device, manufacturing method of semiconductor wafer with adhesive layer and manufacturing method of semiconductor wafer laminate TW201250873A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011106342A JP2012238704A (en) 2011-05-11 2011-05-11 Semiconductor device manufacturing method, semiconductor wafer with adhesive layer manufacturing method, semiconductor wafer with semiconductor element manufacturing method and semiconductor wafer laminate manufacturing method
JP2011106331A JP5891605B2 (en) 2011-05-11 2011-05-11 Manufacturing method of semiconductor device and manufacturing method of semiconductor wafer laminate
JP2011106322A JP2012238699A (en) 2011-05-11 2011-05-11 Semiconductor device manufacturing method, semiconductor wafer with semiconductor element manufacturing method and semiconductor wafer with adhesive layer manufacturing method

Publications (1)

Publication Number Publication Date
TW201250873A true TW201250873A (en) 2012-12-16

Family

ID=47139320

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101116925A TW201250873A (en) 2011-05-11 2012-05-11 Manufacturing method of semiconductor apparatus, manufacturing method of semiconductor wafer with semiconductor device, manufacturing method of semiconductor wafer with adhesive layer and manufacturing method of semiconductor wafer laminate

Country Status (2)

Country Link
TW (1) TW201250873A (en)
WO (1) WO2012153846A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10553457B2 (en) 2014-06-26 2020-02-04 Sony Corporation Semiconductor device to suppress warpage of the semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2015122115A1 (en) * 2014-02-12 2017-03-30 昭和電工株式会社 Manufacturing method of semiconductor package
KR102412246B1 (en) * 2017-06-07 2022-06-23 쇼와덴코머티리얼즈가부시끼가이샤 Film-like adhesive for semiconductors, semiconductor device production method, and semiconductor device
JP2022049640A (en) * 2020-09-16 2022-03-29 昭和電工マテリアルズ株式会社 Adhesive for semiconductor, and semiconductor device and method for manufacturing the same
KR20230068394A (en) * 2020-09-16 2023-05-17 가부시끼가이샤 레조낙 Adhesive for semiconductor, semiconductor device and method for manufacturing the same
WO2023181609A1 (en) * 2022-03-24 2023-09-28 デンカ株式会社 Composition for temporary fixation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0541407A (en) * 1991-08-02 1993-02-19 Citizen Watch Co Ltd Packaging method of semiconductor device
JP2002110851A (en) * 2000-10-03 2002-04-12 Rohm Co Ltd Semiconductor chip and semiconductor device using the semiconductor chip
JP3917484B2 (en) * 2002-07-18 2007-05-23 富士通株式会社 Semiconductor device manufacturing method and semiconductor device
JP3718190B2 (en) * 2002-07-31 2005-11-16 富士通株式会社 Method for forming surface mount structure and surface mount structure
JP2007258508A (en) * 2006-03-24 2007-10-04 Sumitomo Bakelite Co Ltd Adhesive for semiconductor, semiconductor device using the same, and manufacturing method of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10553457B2 (en) 2014-06-26 2020-02-04 Sony Corporation Semiconductor device to suppress warpage of the semiconductor device

Also Published As

Publication number Publication date
WO2012153846A1 (en) 2012-11-15

Similar Documents

Publication Publication Date Title
TWI338028B (en) Method of producing a semiconductor device, and wafer-processing tape
TWI720190B (en) Processing method of electronic parts
JP5530206B2 (en) Semiconductor device manufacturing method and semiconductor device
WO2018030112A1 (en) Acrylic composition for encapsulation, sheet material, laminated sheet, cured object, semiconductor device, and process for producing semiconductor device
TW201250873A (en) Manufacturing method of semiconductor apparatus, manufacturing method of semiconductor wafer with semiconductor device, manufacturing method of semiconductor wafer with adhesive layer and manufacturing method of semiconductor wafer laminate
TW201125948A (en) Semiconductor device and fabricating method thereof, and semiconductor wafer with adhesive layer
JP2012238704A (en) Semiconductor device manufacturing method, semiconductor wafer with adhesive layer manufacturing method, semiconductor wafer with semiconductor element manufacturing method and semiconductor wafer laminate manufacturing method
TWI759375B (en) Tape for semiconductor processing
CN107431002A (en) Semiconductor machining band
TW201125946A (en) Thermosetting die bonding film
TW200904924A (en) Adhesive composition, adhesive sheet and production process for semiconductor device
JP5499516B2 (en) Adhesive composition, circuit member connecting adhesive sheet, and method for manufacturing semiconductor device
JP5830883B2 (en) Adhesive composition for semiconductor, semiconductor device, and method for manufacturing semiconductor device
JP2011009709A (en) Adhesive sheet for connecting circuit member and method for manufacturing semiconductor device
JP2011157552A (en) Adhesive composition, adhesive sheet for connecting circuit member, and method for producing semiconductor device
TW201432005A (en) Resin composition, adhesive sheet, dicing tape single unit adhesive sheet, back grind tape single unit adhesive sheet, back grind tape and dicing tape single unit adhesive tape, and electric device
TW201122075A (en) Liquid adhesive composition for semiconductor, semiconductor device and fabricating method thereof
TW201213477A (en) Adhesive composition and film for manufacturing semiconductor
WO2019163861A1 (en) Sealing resin composition, laminate sheet, cured product, semiconductor device, and method for manufacturing semiconductor device
JP5957794B2 (en) LAMINATED SHEET AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
JP2012238699A (en) Semiconductor device manufacturing method, semiconductor wafer with semiconductor element manufacturing method and semiconductor wafer with adhesive layer manufacturing method
JP2012238703A (en) Semiconductor device manufacturing method, semiconductor wafer with adhesive layer manufacturing method, semiconductor wafer with semiconductor element manufacturing method and semiconductor wafer laminate manufacturing method
JP6225963B2 (en) Liquid photosensitive adhesive
JP5630334B2 (en) Adhesive composition for semiconductor, semiconductor device, and method for manufacturing semiconductor device
TW201615723A (en) Resin composition for temporary fixation, resin film for temporary fixation, resin film sheet for temporary fixation, and method for working semiconductor wafer