201249085 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種電壓轉換電路，特別是指一種升 壓轉換電路。 【先前技術】 升壓轉換器廣泛應用於產業，例如：不斷電（UPS)系統 ，或太陽能電能產生系統，將低直流（DC)電壓昇壓為高直 流電壓的直流型高升壓轉換器是必要的組件。 在早期技術，升壓轉換器是利用充電幫浦（charge pump) 的概念’實現高升壓轉換器就將多個充電幫浦串接起來， 但是’使用越多充電幫浦就需要越多開關元件，並會降低 此類高升壓轉換器的轉換效率；除此以外，電容值越大， 浪湧電流（surge current)也越高。 近年來’例如返馳式轉換器或耦合電感式的高升壓轉 換器是採用磁能元件的圈數比來得到高升壓比，然而，上 述尚升壓轉換器的缺失例如：輸出端浮動，或是電路複雜 ，或是只能用於低功率應用，或是開關元件設置於浮動電 壓端而非接地端而需要額外的隔離驅動電路，徒增系統複 雜度。 【發明内容】 本發明之目的，即在提供一種架構簡單但具有高升壓 比率之升壓轉換電路。 本發明升壓轉換電路適用於將一輸入電壓進行升壓轉 換以輸出一輸出電壓，該升壓轉換電路包含一電感器、一 201249085 第一儲能電容、一第二儲能電容、一第一二極體、一第二 二極體、一第一開關、一第二開關及一輸出電容。 該電感器由一初級繞組及一次級繞組組成，該初級繞 組具有一接收該輸入電壓的第一端及一第二端，該次級繞 組具有一第一端及一第二端。 該第一儲能電容具有一與該初級繞組之第二端輕接的 第一端及一第二端。 δ亥第二儲能電容具有一與該次級繞組之第一端輕接的 第一端及一第二端，且第二儲能電容的第二端接地。 該第一二極體具有一與該次級繞組之第二端耦接的陽 極端及一與該第一儲能電容之第二端耦接的陰極端。 該第二二極體具有一與該第一儲能電容之第二端耦接 的陽極端及一陰極端。 該第一開關具有一接地的第一端及一與該初級繞組之 第一端耗接的第二端。 該第二開關具有一與該初級繞組之第二端耦接的第一 端及—與該次級繞組之第一端耦接的第二端。 該輸出電容具有一與該第二二極體之陰極端及電壓輸 出端耦接的第一端及一接地的第二端。 當該第一開關導通且該第二開關不導通時，該次級繞 組由初級繞組獲取感應電壓，令該第—二極體被順偏導通 二該第二二極體被反向偏壓，該第二儲能電容及該輸出電 办被放電，該第一儲能電容被充電；當該第一開關不導通 且該第二開關導通時’沿著該次級繞組的電壓被自該初級 201249085 繞組的電壓導通，令該初級繞組被消除能量，該第一二極 體被反向偏壓，該第二二極體被正向偏壓，該第二儲能電 容及該輸出電容被充電，該第一儲能電容被放電。 較佳的，該第一開關具有一第一電晶體與第二開關具 有一第二電晶體，且該第一電晶體與該第二電晶體的第一 端與第二端之間分別連接一個未導通時作為放電用途的二 極體；該第一電晶體與該第二電晶體均為N型金氧半場效 電晶體，該第一電晶體與該第二電晶體兩者的第一端為源 極，而第一電晶體與該第二電晶體兩者的第二端為汲極， s亥第一電晶體與該第二電晶體還分別具有一為閘極的第三 端’此第三端係受控端以決定導通與否。 本發明升壓轉換電路之功效在於，藉由一個電感器、 兩個二極體、兩個儲能電容及兩個開關就可達成高升壓轉 換的目的，不但元件组成簡單容易實施，且本發明升壓轉 換電路之轉換效能相較於以往的電路架構也有較佳的表現 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之較佳實施例的詳細說明中，將可清楚 的呈現。 參閱圖1 ’為本發明之較佳實施例中，升壓轉換電路 100具有一輸入端201及一輸出端2〇2,升壓轉換電路100 主要疋於輸入端201加載一輸入電壓4，進行升壓轉換後， 於輸出端202輸出一輸出電壓。 5 201249085 升壓轉換電路100還包含一電感器（由一初級繞組LN1及 一次級繞組zN2組成）、一第一儲能電容C,、一第二儲能電容 c2、一第一二極體〇1、一第二二極體〇2、一第一開關14、 一第二開關13及一輸出電容c。。 初級繞組ZrN1具有一連接輸入端201以接收輸入電麼匕 的第一端111及一第二端112，次級繞組、具有一第一端 151及一第二端152，次級匝數N2除以初級匝數N1等於一 匝數比P。 m 第一儲能電容C,具有一與初級繞組&之第二端丨丨2相 接的第一端121及一第二端122。 第二儲能電容q具有一與次級繞組‘之第一端151箱 接的第-肖161及-第二端162，且第二儲能電容&的第二 端162接地。 第-二極體〇1具有-與次級繞組&之第二端152耗接 :陽極端Μ及一與第一储能電容Cl之第二端122耗接的陰 極端172。 接二二：:：：：能電〜第二端㈣ 鳊141及一與初級繞組 第一開關14具有一接地的第一 心1之第一端112柄接的第二端142。 第二開關13 第—端131及一 132 〇201249085 VI. Description of the Invention: [Technical Field] The present invention relates to a voltage conversion circuit, and more particularly to a voltage boost conversion circuit. [Prior Art] Boost converters are widely used in industries such as uninterruptible power (UPS) systems, or solar energy generation systems, DC-type high-boost converters that boost low-dc (DC) voltages to high DC voltages. It is a necessary component. In the early days, boost converters used the concept of a charge pump to implement a high-boost converter that concatenates multiple charge pumps, but the more switches you use, the more switches you need. Components, and will reduce the conversion efficiency of such high boost converters; in addition, the larger the capacitance value, the higher the surge current. In recent years, for example, a flyback converter or a coupled inductive high boost converter uses a turns ratio of a magnetic energy component to obtain a high boost ratio. However, the above-described lack of a boost converter is, for example, an output floating, Or the circuit is complex, or can only be used for low-power applications, or the switching components are placed on the floating voltage terminal instead of the ground terminal, and additional isolation drive circuits are needed to increase the system complexity. SUMMARY OF THE INVENTION It is an object of the present invention to provide a boost converter circuit that is simple in architecture but has a high boost ratio. The boost converter circuit of the present invention is suitable for boosting an input voltage to output an output voltage. The boost converter circuit comprises an inductor, a 201249085 first storage capacitor, a second storage capacitor, and a first A diode, a second diode, a first switch, a second switch, and an output capacitor. The inductor consists of a primary winding having a first end and a second end receiving the input voltage, and a secondary winding having a first end and a second end. The first storage capacitor has a first end and a second end that are lightly coupled to the second end of the primary winding. The second storage capacitor has a first end and a second end that are lightly connected to the first end of the secondary winding, and the second end of the second storage capacitor is grounded. The first diode has a positive terminal coupled to the second end of the secondary winding and a cathode end coupled to the second end of the first storage capacitor. The second diode has an anode end and a cathode end coupled to the second end of the first storage capacitor. The first switch has a first end that is grounded and a second end that is in contact with the first end of the primary winding. The second switch has a first end coupled to the second end of the primary winding and a second end coupled to the first end of the secondary winding. The output capacitor has a first end coupled to the cathode end and the voltage output end of the second diode and a grounded second end. When the first switch is turned on and the second switch is not turned on, the secondary winding obtains an induced voltage from the primary winding, so that the first diode is forward-conducted and the second diode is reverse-biased. The second storage capacitor and the output device are discharged, and the first storage capacitor is charged; when the first switch is not conducting and the second switch is turned on, 'the voltage along the secondary winding is from the primary 201249085 The voltage of the winding is turned on, the primary winding is de-energized, the first diode is reverse biased, the second diode is forward biased, and the second storage capacitor and the output capacitor are charged The first storage capacitor is discharged. Preferably, the first switch has a first transistor and the second switch has a second transistor, and the first transistor and the second transistor are respectively connected between the first end and the second end. a diode for discharge use when not conducting; the first transistor and the second transistor are both N-type MOS field effect transistors, and the first ends of the first transistor and the second transistor a source, wherein the second end of the first transistor and the second transistor are drain electrodes, and the first transistor and the second transistor further have a third end that is a gate The third end is the controlled end to determine whether to conduct or not. The function of the boost converter circuit of the present invention is that the high boost conversion can be achieved by one inductor, two diodes, two storage capacitors and two switches, and the component composition is simple and easy to implement, and The conversion performance of the inventive boost converter circuit is better than that of the conventional circuit architecture. [Embodiment] The foregoing and other technical contents, features and effects of the present invention are described in the following with reference to preferred embodiments of the drawings. In the detailed description, it will be clearly presented. Referring to FIG. 1 , in a preferred embodiment of the present invention, the boost converter circuit 100 has an input terminal 201 and an output terminal 2 〇 2, and the boost converter circuit 100 is mainly loaded with an input voltage 4 at the input terminal 201. After the boost conversion, an output voltage is output at the output terminal 202. 5 201249085 The boost converter circuit 100 further includes an inductor (composed of a primary winding LN1 and a primary winding zN2), a first storage capacitor C, a second storage capacitor c2, and a first diode 〇 1. A second diode 〇2, a first switch 14, a second switch 13, and an output capacitor c. . The primary winding ZrN1 has a first input end 111 and a second end 112 connected to the input terminal 201. The secondary winding has a first end 151 and a second end 152. The secondary turns N2 are divided. The primary turns N1 is equal to a turns ratio P. m The first storage capacitor C has a first end 121 and a second end 122 that are connected to the second end 丨丨2 of the primary winding & The second storage capacitor q has a first XI and a second end 162 that are coupled to the first end 151 of the secondary winding ‘, and a second end 162 of the second storage capacitor & The first diode 具有1 has - a second terminal 152 of the secondary winding & amp: an anode terminal and a cathode terminal 172 that is in contact with the second terminal 122 of the first storage capacitor C1. Connected to the second::::: power to the second end (four) 鳊 141 and a primary winding The first switch 14 has a second end 142 of the first end 112 of the first core 1 that is grounded. The second switch 13 has a first end 131 and a 132 〇
具有一與初級繞組L 與次級繞組ZN2之第—Has one with the primary winding L and the secondary winding ZN2 -
Nl<第二端112耦接的 端151耦接的第二 端 6 201249085 *輸出電容U有—與第二二極體A之陰極端旧及輸出 端202耦接的第—端181及―接地的第二端182。 本較佳實施例中，第-開關14具有-第-電晶體與 第二開關13具有一第二電晶體込，且第_電晶體。與第二 電晶體&均為N型金氧半場效電晶體，第-電晶體β,與第 電曰曰體仏兩者的第一端為源極，而第二端為沒極，第一電 晶體G與第二電晶體㈣分別具有—為閘極的第三端此第 二端係受控端以決定導通與否，且第一電晶體以的第一端 141與第二端142之間連接—個未導通時作為放電用途的二 極體D3帛一電晶體仏的第一端131與第二端m之間連接 —個未導通時作為放電用途的二極體以。 此外藉由一控制器（圖未示）產生的閘極驅動訊號M J 可用來驅動第-電晶體&以及配合同步整流的閘極驅動訊 號M2用來驅動第二電晶體么。值得注意的是，第一電晶體 Q與第二電晶體込可接續半橋驅動器後被驅動。 本較佳實施例中，升壓轉換電路1〇〇在連續導通模式 (Continuous Comhiction Mode;簡稱 CCM)有兩種操作模式 ’分述如下。 參閱圖2，第一操作模式是第一開關14導通且第二開 關13不導通時，次級繞組&由初級繞組^獲取感應電壓， 因此第一二極體^被順偏導通，第二二極體h被反向偏壓， 第二儲能電容A及輸出電容q被放電，第一儲能電容&被 充電。 201249085 第操作模式有二條功率（power flow)路徑，其中一路 徑是通過初級繞組、至第一二極體Di ;其中一路徑是通過 次級繞組、、第一二極體Di、第一儲能電容q後至第一開 關14的第一電晶體& ;另一路徑是通過輸出電容c。至輸出 端202提供輸出電壓匕；此模式下，第一儲能電容q之第 一儲能電壓 rcl = rC2+L*g。 參閱圖3，第二操作模式是第一開關14不導通且第二 開關13導通時，沿著次級繞組、的電壓被自初級繞組k的 電壓導通，致使初級繞組^被消除能量，第一二極體D,被 反向偏壓，第二二極體q被正向偏壓，第二儲能電容6及 輸出電容C；被充電，第一儲能電容q被放電；在此模式有兩 條功率路徑，其中一路徑是經過第二開關13對第二儲能電 容充電，另一路徑是輸入電壓匕經由初級繞組心，、第一 儲能電容c,，使第二二極體Dz順偏導通而通過輸出電容c。至 輸出端202提供輸出電壓l。 依據伏特-秒平衡（v〇lt-second balance)原理，第二儲能 電壓h =匕*了& ;又，第一儲能電壓Γα =匕*登+匕* 1 —;且 輸出電壓心占)+(c豈忐）；因此，輸 出電壓 本較佳實施例於模擬的電路規格為輸入電壓匕為24 伏特；（ii)輸出電壓L為170伏特；（出)輸出電流範圍為 〇_1安培至to 1.4安培；以及（iv)開關頻率為2〇〇k赫茲。 8 201249085 參閱圖4，第一電晶體&的驅動電壓v卸，以及沿著第— 電晶體Q的電壓Vdsl及第一電晶體込的電壓、皆處於滿載 (full load)的狀態；由圖4可知，兩個電壓峰值幾乎相同約 為48伏特。 參閱圖5，呈現初級繞組‘之初級電壓、、初級電流、 、次級繞組之次級電壓vs、次級電流Is，均處於滿載的狀 態，由圖5可知，因為漏電感（ieakage in(juctance)隨著第二 儲能電容G的電壓vCB使得次級電壓Vs的波形有高頻振盪 (high-frequency oscillation)發生。 參閲圖6 ’描繪沿著第一儲能電容&的電壓，及第二 儲能電容Q的電壓；及交流電壓（AC v〇ltage)加載第一儲能 電容C,的電壓，及第二儲能電容q的電壓，均處於滿載的狀 態；由圖6可知，沿著第一儲能電容q的電壓，及第二儲能 電容Q的電壓幾乎保持固定值，分別為12〇伏特及對應的 48伏特。 參閱圖7 ，呈現轉換效能（efficiency)及輸出負載 (output load)的折線圖，本發明的升壓轉換電路1〇〇在全部 的負載範圍都維持在87%以上，在輕載（light 1〇ad)狀態甚 至可高達約95% ，與發明人所提出的先前架構一、先前架 構二及先前架構三相比較，本發明的升壓轉換電路1〇〇有 較佳的轉換效能；其中’先前架構一是「基於升壓型轉換 器及電荷幫浦的高升壓行轉換器（High step_Up converter based on charge pump and boost converter)」，先前架構二是 「基於電荷幫浦及負向電壓箝制的耦合電感的電壓_升壓型 201249085 轉換器（Voltage-boosting converter based on charge pump and coupling inductor with passive voltage clamping)」，及先前 架構二是「KY升壓型轉換器（KY boost converter)」。 综上所述，本發明升壓轉換電路100之功效在於，藉 由電感器（由一初級繞組ZN1及一次級繞組‘組成）、第一儲 能電容C|、第一儲能電容C2、第一二極體、第二二極體D2 、第一開關14、第二開關13及輸出電容q就可達成高升壓 轉換的目的’不但元件組成簡單容易實施，且本發明升壓 轉換電路100之轉換效能相較於以往的電路架構也有較佳 的表現，故確實能達成本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一電路圖，說明本發明升壓轉換電路之較佳實 施例； 圖2是一電路示意圖，說明本發明升壓轉換電路之第 一開關導通且第二開關不導通的狀態； 圖3是一電路示意圖，說明本發明升壓轉換電路之第 一開關不導通且第二開關導通的狀態； 圖4至6是波形圊，說明本發明升壓轉換電路的實際 模擬結果；及 圖7疋折線圖，說明本發明升壓轉換電路的轉換效能 10 201249085 相較於三種先前架構為佳。 11 201249085 【主要元件符號說明】 100升壓轉換電路 18卜輪ib電容的第一端 111 ·.初級繞組的第一端 182··輸出電容的第二端 112·.初級繞組的第二端 191··第二二極體的陽極 121"第一儲能電容的第一端 192··第二二極體的陰極 122 ··第一儲能電容的第二端 201··輸入端 13…第二開關 202··輸出端 131..第二開關的第一端 ZN1 ••初級繞組 132..第二開關的第二端 ‘ · ·次級繞組 14..·第一開關 C,…第一儲能電容 141 ·.第一開關的第一端 c2···第二儲能電容 142 ..第一開關的第二端 …輸出電容 151 ..次級繞組的第一端 D,…第一二極體 152 ..次級繞組的第二端 D2··•第二二極體 171 .·第一二極體的陽極 d3、D4二極體 172"第一二極體的陰極 2,…第一電晶體 161”第二儲能電容的第一端 162 ·.第二儲能電容的第二端 02…第二電晶體 12Nl < second end 112 coupled to the second end 112 coupled to the second end 6 201249085 * output capacitor U has - the second end of the second diode A and the output end 202 coupled to the first end 181 and - ground The second end 182. In the preferred embodiment, the first switch 14 has a -first transistor and a second transistor 13 having a second transistor 込 and a _th transistor. And the second transistor & is an N-type gold-oxygen half-field effect transistor, the first end of the first transistor β, and the first electrode is the source, and the second end is the pole, the second A transistor G and a second transistor (4) respectively have a third end of the gate, the second end is controlled, to determine whether to conduct or not, and the first transistor 141 and the second end 142 of the first transistor The connection between the first end 131 and the second end m of the diode D3, which is used for discharge, when not conducting, is connected to a diode which is used for discharge when not conducting. In addition, a gate drive signal M J generated by a controller (not shown) can be used to drive the first transistor & and a synchronously commutated gate drive signal M2 for driving the second transistor. It is worth noting that the first transistor Q and the second transistor 込 can be driven after the half-bridge driver. In the preferred embodiment, the boost converter circuit 1 has two modes of operation in the Continuous Comhiction Mode (CCM), which are described below. Referring to FIG. 2, when the first operation mode is that the first switch 14 is turned on and the second switch 13 is not turned on, the secondary winding & obtains the induced voltage from the primary winding ^, so the first diode is turned on, and the second The diode h is reverse biased, the second storage capacitor A and the output capacitor q are discharged, and the first storage capacitor & is charged. 201249085 The first mode of operation has two power flow paths, one of which passes through the primary winding to the first diode Di; one of the paths is through the secondary winding, the first diode Di, the first energy storage The capacitor q is followed by the first transistor & of the first switch 14; the other path is through the output capacitor c. The output voltage 提供 is supplied to the output terminal 202; in this mode, the first storage voltage rcl of the first storage capacitor q is rcl = rC2+L*g. Referring to FIG. 3, the second mode of operation is that when the first switch 14 is non-conducting and the second switch 13 is turned on, the voltage along the secondary winding is turned on by the voltage from the primary winding k, causing the primary winding to be eliminated, first. The diode D is reverse biased, the second diode q is forward biased, the second storage capacitor 6 and the output capacitor C are charged, and the first storage capacitor q is discharged; in this mode Two power paths, one of which is to charge the second storage capacitor through the second switch 13, the other path is the input voltage 匕 via the primary winding core, and the first storage capacitor c, so that the second diode Dz The output capacitor c is passed through the output. Output voltage l is provided to output terminal 202. According to the principle of volt-second balance (v〇lt-second balance), the second energy storage voltage h = 匕 * &; again, the first energy storage voltage Γ α = 匕 * 登 + 匕 * 1 -; and the output voltage core占)+(c岂忐); therefore, the output voltage of the preferred embodiment is analog circuit specification for input voltage 匕 24 volts; (ii) output voltage L is 170 volts; (out) output current range is 〇 _ 1 amp to 1.4 amp; and (iv) switching frequency 2 〇〇k Hz. 8 201249085 Referring to FIG. 4, the driving voltage v of the first transistor & unloading, and the voltage Vdsl along the first transistor Q and the voltage of the first transistor 、 are all in a full load state; 4 It can be seen that the two voltage peaks are almost the same as about 48 volts. Referring to Figure 5, the primary voltage of the primary winding, the primary current, the secondary voltage vs. the secondary current vs, the secondary current Is, are all in a fully loaded state, as can be seen from Figure 5, because of leakage inductance (ieakage in (juctance) With the voltage vCB of the second storage capacitor G, a high-frequency oscillation of the waveform of the secondary voltage Vs occurs. Referring to FIG. 6', the voltage along the first storage capacitor & The voltage of the second storage capacitor Q; and the voltage of the AC storage capacitor C, and the voltage of the second storage capacitor q are all in a fully loaded state; as can be seen from FIG. The voltage along the first storage capacitor q and the voltage of the second storage capacitor Q are almost fixed at 12 volts and correspondingly 48 volts. Referring to Figure 7, the conversion efficiency and output load are presented. The line diagram of the output load), the boost converter circuit 1 of the present invention maintains 87% or more over the entire load range, and can even be as high as about 95% in the light load state, with the inventor Proposed prior architecture, previous architecture II Prior to the three-phase comparison of the architecture, the boost converter circuit 1 of the present invention has better conversion performance; wherein the 'previous architecture one is the high step-up converter based on the boost converter and the charge pump (High step_Up) Converter based on charge pump and boost converter), the previous architecture is "Voltage-boosting converter based on charge pump and coupling inductor with voltage-boosting converter based on charge pump and coupling inductor with Passive voltage clamping)", and the previous architecture 2 is "KY boost converter". In summary, the boost converter circuit 100 of the present invention functions by means of an inductor (by a primary winding) ZN1 and primary winding 'composition', first storage capacitor C|, first storage capacitor C2, first diode, second diode D2, first switch 14, second switch 13, and output capacitor q The purpose of achieving high boost conversion is not only simple and easy to implement, but also the conversion performance of the boost converter circuit 100 of the present invention is better than that of the conventional circuit architecture. It is to be understood that the present invention may be achieved by the present invention. The foregoing is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. The simple equivalent changes and modifications made by the content are still within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a circuit diagram illustrating a preferred embodiment of a boost converter circuit of the present invention; FIG. 2 is a circuit diagram illustrating that a first switch of the boost converter circuit of the present invention is turned on and the second switch is non-conducting Figure 3 is a circuit diagram illustrating the state in which the first switch of the boost converter circuit of the present invention is non-conducting and the second switch is turned on; Figures 4 through 6 are waveform diagrams illustrating the actual simulation results of the boost converter circuit of the present invention. And Figure 7 is a line diagram illustrating the conversion performance of the boost converter circuit of the present invention. 10 201249085 is preferred over the three previous architectures. 11 201249085 [Description of main component symbols] 100 boost converter circuit 18 first end 111 of wheel ib capacitor · first end of primary winding 182 · second end of output capacitor 112 · second end of primary winding 191 · The anode of the second diode 121 " the first end of the first storage capacitor 192 · the cathode 122 of the second diode · · the second end 201 of the first storage capacitor · · input 13 ... The second switch 202 · the output end 131.. the first end of the second switch ZN1 • the primary winding 132. the second end of the second switch ' · · the secondary winding 14 .... · the first switch C, ... first The storage capacitor 141 · the first end of the first switch c2 · · · the second storage capacitor 142 .. the second end of the first switch ... the output capacitor 151 .. the first end of the secondary winding D, ... first Diode 152.. Second end of the secondary winding D2··•Second diode 171. The anode of the first diode d3, D4 diode 172" The cathode of the first diode 2,... First transistor 161" first storage capacitor first end 162.. second storage capacitor second end 02... second transistor 12