201248676 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種半導體領域中用於晶圓加工的聚焦環和 等離子處理器調節方法，具體涉及一種可調製的聚焦環 和利用該聚焦環調節等離子處理器的方法。 C先前技術3 [0002] 目前’在晶圓1 (wafer)的生產流程中需採用等離子體5 對晶圓進行刻蝕工藝，如第1圖所示，晶圓1進行刻餘工 0 藝時，將晶圓1固定支撐在基座2上，並在晶圓1的侧邊外 環繞套設有聚焦環3 (focus ring)，在對晶圓1進行刻 钱時’在晶圓1上方分佈用於刻蝕晶圓1的反應氣體。基 座2發射電磁波，將反應氣體内的粒子轉化為等離子體5 ’並通過電場將等離子體5對晶圓1進行刻蝕。聚焦環3採 用石英或矽材質製成，其套設在晶圓1的外圈，增加了晶 圓1的表面積，用於保護暴露在晶圓1覆蓋區域外的基座2201248676 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a focus ring and plasma processor adjustment method for wafer processing in the field of semiconductors, and more particularly to a modulatable focus ring and utilizing the focus A method of ring-regulating a plasma processor. C Prior Art 3 [0002] At present, in the wafer 1 (wafer) production process, plasma 5 is required to etch the wafer. As shown in Fig. 1, the wafer 1 is etched. The wafer 1 is fixedly supported on the susceptor 2, and a focus ring is disposed around the side of the wafer 1 and is distributed over the wafer 1 when the wafer 1 is engraved. A reactive gas used to etch the wafer 1. The pedestal 2 emits electromagnetic waves, converts particles in the reaction gas into a plasma 5' and etches the plasma 5 against the wafer 1 by an electric field. The focus ring 3 is made of quartz or tantalum, which is sleeved on the outer ring of the wafer 1, and increases the surface area of the wafer 1 for protecting the susceptor 2 exposed outside the coverage area of the wafer 1.
100145533 將反應氣體分佈在晶圓1上方，基座2連接高頻輸出高 頻電易將反應氣體内的粒子轉化為等離子體5，同時基 妾通有低頻電場，在晶圓1上方的區域内產生低頻電 場，通過低頻電場對等離子體5作用，將等離子體5打在 B«圓1表面上，對晶圓1進行刻蝕〇 B ·曰曰圓1進行刻蝕工藝的裝置内，基座2發射的高頻電 場，該高頻電場的分佈為中間強度較λ分佈較均勻，外 邊強度較小分佈不均勻由於場強的不均勻導致等離子分 佈也是中間高邊緣低、结合扪圖，參見第2圖，附第2圖 表示㈣子體密度’橫坐標表示晶圓的水準 1003481209-0 ^ A0101 第3頁/共加百 201248676 方向座標，其中的虛線表示設有聚焦環時的等離子體濃 度分佈，實線表示未設聚焦環是等離子體濃度分佈，因 此，參照附圖，可知現有技術的機制將會導致在等離子 體5對晶圓1進行刻蝕工藝時，晶圓1表面的等離子體5密 度分佈呈中央多、邊緣少的分佈曲線，使晶圓1表面的等 離子體5密度分佈的均勻度較差，無法滿足較高制程要求 的晶圓1蝕刻工藝。當聚焦環3套設在晶圓1外側，將等離 子體5的分佈邊緣延展到聚焦環3的外侧壁緣，增大了等 離子體5的分佈範圍，展寬了晶圓1表面上等離子體5的密 度分佈曲線。使晶圓1表面上等離子體5的密度分佈趨向 平缓，晶圓1表面上的等離子體5密度分佈更加均勻化。 即使添加了聚焦環以調節高頻電場的分佈，進而調節等 離子濃度分佈也無法實現最佳化，因為一個等離子處理 腔通常會採用不同的工藝加工不同的晶圓，專門為一個 加工工藝而設計的聚焦環不一定適用於其他加工工藝。 因此，業内需要一種可控性更強效果更好的刻蝕均勻度 (etch uniformity)控制機制，本發明正是基於此提 出的。 【發明内容】 | [0003] 100145533 本發明提供能夠了一種可調製的聚焦環和利用該聚焦環 調節等離子處理器的方法，通過控制聚焦環的溫度來調 節射頻耦合（RF coupling)，從而，能夠提高刻蝕的 均勻度，同時，還能延長聚焦環的使用時間。 為實現上述目的，本發明提供一種可調製的聚焦環，該 聚焦環設為環形結構，其環繞套設在晶圓外側壁，該聚 焦環和晶圓一起設置在基座的頂面上； 表單編號A0101 第4頁/共20頁 201248676 丹付點是 L, 艰連接有溫度調節裝置； 上述的聚焦環中穆雜有阻抗調節材料。 上述的溫度調”置採用冷卻器或電阻絲。 =的阻抗調節材料採科料半導體；該 料的阻抗隨溫度變化。 調即材 上述的聚焦環㈣部與晶圓的頂部高度一致。 上述的聚焦環的底部與基朗頂部相貼合。 一種等離子處理器調節方法，100145533 distributes the reaction gas above the wafer 1, and the susceptor 2 is connected to the high-frequency output high-frequency electricity to easily convert the particles in the reaction gas into the plasma 5, and at the same time, the low-frequency electric field is passed through the region above the wafer 1. A device that generates a low-frequency electric field, acts on the plasma 5 through a low-frequency electric field, and strikes the plasma 5 on the surface of the B_circle 1 to etch the wafer 1 and etch the wafer 1 to perform an etching process. 2 The high-frequency electric field emitted, the distribution of the high-frequency electric field is more uniform than the λ distribution, and the outer intensity is smaller and the distribution is uneven. Due to the uneven field strength, the plasma distribution is also low in the middle high edge, combined with the map. 2, attached Figure 2 shows (4) sub-body density 'horizontal coordinates indicate wafer level 1003481209-0 ^ A0101 page 3 / total plus hundred 201248676 direction coordinates, where the dotted line indicates the plasma concentration distribution when the focus ring is provided The solid line indicates that the focus ring is not provided with the plasma concentration distribution. Therefore, referring to the drawings, it is understood that the prior art mechanism will result in the surface of the wafer 1 when the plasma 5 is etched on the wafer 1. The plasma density distribution had central much less edge profile, the ion surface of the wafer 1 5 peer poor density uniformity of distribution of the wafer etching process can not meet the high requirements of the process. When the focus ring 3 is sleeved outside the wafer 1, the distribution edge of the plasma 5 is extended to the outer sidewall of the focus ring 3, which increases the distribution range of the plasma 5 and broadens the plasma 5 on the surface of the wafer 1. Density distribution curve. The density distribution of the plasma 5 on the surface of the wafer 1 tends to be gentle, and the plasma 5 density distribution on the surface of the wafer 1 is more uniform. Even if a focus ring is added to adjust the distribution of the high-frequency electric field, and then the plasma concentration distribution is adjusted, optimization cannot be achieved because a plasma processing chamber usually uses different processes to process different wafers, which is specially designed for one process. The focus ring does not necessarily apply to other machining processes. Therefore, the industry needs a etch uniformity control mechanism with better controllability and better effect, and the present invention is based on this. SUMMARY OF THE INVENTION [0003] The present invention provides a modulatable focus ring and a method of adjusting a plasma processor using the focus ring, by adjusting the temperature of the focus ring to adjust RF coupling, thereby enabling Improve the uniformity of etching, and at the same time, extend the life of the focus ring. To achieve the above object, the present invention provides a modulatable focus ring, the focus ring is configured as a ring structure, which is disposed around an outer sidewall of the wafer, and the focus ring and the wafer are disposed on a top surface of the pedestal; No. A0101 Page 4 of 20 201248676 Dan pays point is L, hard connection with temperature adjustment device; The above focus ring is mixed with impedance adjustment material. The above-mentioned temperature adjustment adopts a cooler or a resistance wire. The impedance adjustment material of the material is a semiconductor semiconductor; the impedance of the material changes with temperature. The focus ring (four) of the above-mentioned focus ring is consistent with the top height of the wafer. The bottom of the ring is attached to the top of the base. A plasma processor adjustment method,
其中料離子處理器包括：_個基座，其中基座上方包 括固疋B日圓的平臺個半導體聚焦環圍繞晶圓固定平 臺’ 5亥聚焦壞包括—個溫度調節裝置，基座中包括__個 電極連接到一個射頻電源； 上述等離子處理器調節方法包括： 向基座中的電極供應射頻能量以產生第一分佈等離子體 ，聚焦環工作在第一溫度； 控制溫度調節裝置使半導體聚集環工作在第二溫度，產 生第一分佈的等離子體， 其中第一溫度和第二溫度的差大於50。(：。 上述的半導體聚焦環的電阻隨溫度變化。The ion processor includes: a base, wherein the base of the base includes a solid B circle, and the semiconductor focus ring surrounds the wafer fixed platform. 5 focus focusing includes a temperature adjusting device, and the base includes __ The electrodes are connected to a radio frequency power supply; the plasma processor adjusting method comprises: supplying radio frequency energy to electrodes in the susceptor to generate a first distributed plasma, the focus ring operates at a first temperature; and controlling the temperature adjusting device to operate the semiconductor collecting ring At the second temperature, a first distributed plasma is produced, wherein the difference between the first temperature and the second temperature is greater than 50. (: The resistance of the above semiconductor focus ring varies with temperature.
上述的半導體聚焦環第一溫度和第二溫度的差大於65-C 溫度調節裝置調節聚焦環的溫度，聚焦環内阻抗調節材 料的溫度隨著聚焦環的溫度變化而改變，隨著溫度的改 變’阻抗調節材料的阻抗也隨著其自身溫度變化，阻抗 100145533 調知材料阻抗的變化改變聚焦環的阻抗，基座發射的電 %党聚焦環的阻抗變化的影響，電場對聚焦環和晶圓上 表單編號A0101 第5頁/共20頁 1003481209-0 201248676 方的等離子體的電場作用也產生變化。溫度調節裴置粑 據上述過程，對晶圓和聚焦環上等離子體的密度分佈進 行調製，使晶圓和聚焦環上等離子體的密度分佈更趨向 均勻化。 本發明一種可調製的聚焦環和現有技術的聚焦環相比， 其優點在於，本發明的聚焦環連接有溫度調節裝置門 時在聚焦環中摻雜有導電體或非導電體的阻抗調節材料 ，通過溫度調ip裝置調節聚焦環的溫度，利用阻抗調μ 材料其阻抗隨溫度變化的特性，使得聚焦環的阻抗隨著 溫度變化而變化，以調節聚焦環的阻抗，調節射頻耦人 (RF coupling) ’從而調整晶圓邊緣和聚焦環上等離 子體的密度分佈’使打在晶圓表面上等離子體的密度分 佈均勻化，從而能夠提高刻姓的均勻度，提高晶圓刻钱 的工藝品質。同時’還能延長聚焦環的使用時間。 【實施方式】 [0004] 以下結合附圖’說明本發明的具體實施方式。 晶圓1的生產流程中包含有對晶圓1進行刻蝕的工藝。在 進行刻蝕工藝前，將晶圓1平穩地固定在基座2上並在 晶圓1的外侧套設有聚焦環3。進行刻姓工藝時，在晶圓1 和聚焦環3上方的分佈反應氣體，基座2向反應氣體發射 電場，利用基座2發射的電場電離反應氣體，使反應氣體 中產生等離子體5，並通過電場驅動等離子體5打向晶圓1 ，對晶圓1進行刻蝕。 如第3圖所示，本發明公開了 一種可調製的聚焦環，以下 器上，其中該 1003481209-0 說明暸該可調製的聚焦環的一種實施例。 該可調製的聚焦環設置在一種等離子處理 100145533 表單煸號A0101 第6頁/共20頁 201248676 等離子處理器包括：一個基座！，其中基座】上方包括固 疋曰曰圓的平臺21，一個半導體的聚焦環^圍繞晶圓固定平 臺21，该聚焦環包3括一個溫度調節裝置4，基座丨中包括 一個電極連接到一個射頻電源。 聚焦環3設為環形結構，其採用半導體（semi_ conductive)材料製成，比如^和^等。該聚焦環3 環繞套設在晶圓1的外側壁外，同時，聚焦環3與晶圓j 一 起平穩固定在基座2的頂面上。其中晶圓1的半徑小於基 r 座2頂面的半徑。聚焦環3的内徑與晶圓1的半徑相適配， ) 使聚焦環繞在晶圓1外。同時聚焦環3的外徑大於或至 少等於基座2頂面的半徑，保證完全遮蔽基座2表面，保 護基座2不受等離子體5的蝕刻，避免基座2損耗。聚焦環 外徑也可以小於基座2的半徑，在聚焦環3之外再配置一 邊緣環覆蓋其餘部分的基座，甚至伸出基座邊緣。邊緣 環可以與聚焦環材料不同，比如可以是絕緣材料的石英 製成。 本實施例中，基座2設為圓柱形，在其頂面的中央部分上 ) 設有圓柱形的平臺21，晶圓1固定在該圓柱形的平臺21上 。平臺21通常是靜電夾盤能夠使晶圓固定在基座2上。聚 焦環3的底部與基座2頂面上的邊在該基座2中還設有速通 基座2上下表面的通孔，該通孔與基座2上表面相對應的 出口設置在基座2上表面的邊緣，該出口與聚焦環3設置 的位置相對應。 聚焦環3的外徑大於或至少等於基座2頂部的半徑。使得 晶圓1和聚焦環3將基座2完全覆蓋在晶圓丨和聚焦環3底面 下。當對晶圓1進行刻蝕時，等離子體5完全被晶圓丨和聚 100145533 表單编號 Α0101 第 7 頁/共 20 頁 1003481209-0 201248676 ’保護基座2的頂 焦環3阻擋和。及收，而不會打在基座2上 面，延長基座2的使用壽命。 =純3中由铸體材料製成，所述半導體材料的電阻 外e.ectric resistivity)會隨其自身溫度變化而變 ，該導體或铸體採驗抗與溫度叙_導體或半 導體’或者採⑽抗與溫度成反比的導體或半導體。因 此’可以通過通過調節溫度可改變阻抗調節材料的阻抗 ，阻抗調節材料的阻抗的變化導致聚焦環3阻抗變化，從 ▲夠通過控制聚焦環3的溫度來調節射頻耗合。因此， 此夠優化刻料勻度，以及延長聚焦環3的壽命。。 平滑的平面結構便於等離子體5的密度分佈保持連續性， 使等離子體5的密度分佈制工藝要求1發财聚焦環 3的頂部高度與晶an的頂部高度設為相同高度，使聚焦 環3的頂面和晶圓1的頂面設置在同-水平面上，使聚焦 環3和晶ΒΠ的頂面上的等離子體5具有平滑的密度分佈、。 聚焦環的高度也可以略高於或低於晶圓平面可以調節晶 圓表面的氣流分佈，與本發明可變電阻的聚焦環相配合 實現很好的調節作用。 σ 基座2連接有高頻電源和低頻源，使基座2可在其周圍產 生高頻電場和低頻電場m產生的高頻電場對反應氣 體進行電離，從反應氣體中電離出等離子體5 ◊同時，基 座2產生低頻電場，通過低頻電場對反應氣體中電離出來 的等離子體5施加電場力，控制等離子體5的運動方向， 使等離子體5打在聚焦環3和晶圓1上。 示例性地，聚焦環3連接有溫度調節裝置4，該溫度調節 裝置4可採用冷卻器（co〇ling)或電阻絲。 100145533 表單编號A0101 第8頁/共2〇頁 201248676 冷卻器（cooling)包含製冷裝置，以及與製冷裝置連接 的冷卻管。當溫度調節裝置4採用冷卻器（cooling)時 ，冷卻器（cooling)的製冷裝置設置在基座2的下方， 基座2中設有連通其上下表面的通孔，冷卻管穿過基座2 的通孔由基座2的下表面通至基座2的上表面，並且該冷 卻管與聚焦環3的下部相接觸，如第4圖所示，緊密貼合 聚焦環3的外表面。製冷裝置通過冷卻管對聚焦環3進行 溫度控制。 當溫度調節裝置4採用電阻絲時，電阻絲的兩端設置在基 座2的下表面下，並兩端連接電源。同時基座2中設有連 通其上下表面的通孔，電阻絲通過該通孔將其一部分的 電阻絲設置在基座2的上表面上方*該部分電阻絲中的一 段電阻絲緊密貼合在聚焦環3底部的外表面，如第4圖所 示。電阻絲通電後產生熱量，通過與聚焦環3緊密貼合的 一段電阻絲對聚焦環3進行熱傳導，調節聚焦環3的溫度 〇 以下結合一個變化例，說明溫度調節裝置4與聚焦環3的 另一種連接方式式。 本實施例中，基座2設為圓柱形，在其頂面的中央部分上 設有圓柱形的平臺21，晶圓1固定在該圓枉形的平臺21上 ，在該基座2中設有連通基座2上下表面的通孔。溫度調 節裝置4包含分別設置在基座2上下表面的部分，該分別 設置在基座2上下表面的部分通過基座2的通孔實現連接 〇 如第5圖所示，溫度調節裝置4可採用冷卻器（cooling )或電阻絲。 100145533 表單編號A0101 第9頁/共20頁 1003481209-0 201248676 冷卻器（cooling)包含製冷裝置，以及與製冷裝置連接 的冷卻管。當溫度調節裝置4採用冷卻器（cooling)時 ，冷卻器（cooling)的製冷裝置設置在基座2的下方， 基座2中設有連通其上下表面的通孔，冷卻管穿過基座2 的通孔由基座2的下表面通至基座2的上表面。該冷卻管 的部分管道串設在聚焦環3中，與聚焦環3的内部緊密接 觸。製冷裝置通過冷卻管對聚焦環3進行溫度控制。 當溫度調節裝置4採用電阻絲時，電阻絲的兩端設置在基 座2的下表面下，並連接電源，同時基座2中設有連通其 上下表面的通孔，電阻絲通過該通孔將其一部分的電阻 絲設置在基座2的上表面上方，該部分電阻絲中的一段電 阻絲設置在聚焦環3内，電阻絲與聚焦環3内部緊密接觸 。電阻絲通電後產生熱量，通過設置在聚焦環3中與聚焦 環3接觸的一段電阻絲，電阻絲對聚焦環3進行熱傳導， 調節聚焦環3的溫度。 以下說明本發明一種可調製的聚焦環的另一種實施方式 〇 如第6圖所示，聚焦環3設為環形結構，其採用與晶圓1接 近的材料製成。該聚焦環3環繞套設在晶圓1的外侧壁外 。晶圓1的半徑小於基座2頂面的半徑，聚焦環3的内徑與 晶圓1的半徑相適配。 本實施例中，基座2設為圓柱形，在其頂面的中央部分上 設有圓柱形的平臺21，晶圓1穩固放置在該圓柱形的平臺 21上。聚焦環3套設在晶圓1的外侧壁外，聚焦環3的底部 與基座2頂面上的邊緣部分緊密貼合，該頂面上的邊緣部 分指基座2頂面上未設有圓柱形平臺21的部分。 100145533 表單編號A0101 第10頁/共20頁 1003481209-0 201248676 聚焦環3中摻雜有阻抗調節材料’該阻抗調節材料採用導 體或半導體’使本發明中的聚焦環3的阻抗隨其溫度變化 改變。 聚焦環3的頂部高度與晶圓丨的頂部高度設為相同高度， 使聚焦環3的頂面和晶圓丨的頂面設置在同—水平面上， 使聚焦環3和晶圓1的頂面上的等離子體5具有平滑的密度 分佈。The difference between the first temperature and the second temperature of the semiconductor focus ring is greater than 65-C. The temperature adjusting device adjusts the temperature of the focus ring, and the temperature of the impedance adjusting material in the focus ring changes with the temperature of the focus ring, as the temperature changes. 'The impedance of the impedance-regulating material also changes with its own temperature. The impedance of 100145533 is known to change the impedance of the material to change the impedance of the focus ring. The susceptor emits the effect of the impedance change of the party's focus ring. The electric field is on the focus ring and the wafer. The upper part number A0101 page 5 / total 20 pages 1003481209-0 201248676 The electric field effect of the square plasma also changes. Temperature regulation device 粑 According to the above process, the density distribution of the plasma on the wafer and the focus ring is modulated to make the density distribution of the plasma on the wafer and the focus ring more uniform. Compared with the prior art focus ring, the modulating focus ring of the present invention has the advantage that the focus ring of the present invention is connected with the temperature adjusting device door and the focus ring is doped with an electrical or non-conducting impedance adjusting material. Adjusting the temperature of the focus ring by the temperature adjustment device, using the impedance to adjust the impedance of the material to change with the temperature, so that the impedance of the focus ring changes with temperature to adjust the impedance of the focus ring and adjust the RF coupling (RF). Coupling 'and thus adjust the density distribution of the plasma on the edge of the wafer and the focus ring' to homogenize the density distribution of the plasma on the surface of the wafer, thereby improving the uniformity of the surname and improving the process quality of wafer engraving . At the same time, it can also extend the use time of the focus ring. [Embodiment] [0004] Specific embodiments of the present invention will be described below with reference to the accompanying drawings. The process of wafer 1 includes a process of etching wafer 1. The wafer 1 is smoothly fixed on the susceptor 2 and a focus ring 3 is placed on the outer side of the wafer 1 before the etching process. During the engraving process, the reaction gas is distributed over the wafer 1 and the focus ring 3, the susceptor 2 emits an electric field to the reaction gas, and the electric field emitted by the susceptor 2 ionizes the reaction gas to generate a plasma 5 in the reaction gas, and The wafer 1 is etched by driving the plasma 5 to the wafer 1 by an electric field. As shown in Fig. 3, the present invention discloses a modulatable focus ring, on the following, wherein the 1003481209-0 illustrates an embodiment of the modulatable focus ring. The modulatable focus ring is set in a plasma processing 100145533 Form nickname A0101 Page 6 of 20 201248676 Plasma processor includes: a pedestal! The pedestal includes a solid-shaped dome 21 thereon, and a semiconductor focusing ring surrounds the wafer fixing platform 21, the focusing ring package 3 includes a temperature adjusting device 4, and the base cymbal includes an electrode connected thereto. An RF power supply. The focus ring 3 is provided in a ring structure made of a semi-conductive material such as ^ and ^. The focus ring 3 is sleeved around the outer side wall of the wafer 1, and the focus ring 3 is smoothly fixed to the top surface of the susceptor 2 together with the wafer j. The radius of the wafer 1 is smaller than the radius of the top surface of the base 2 . The inner diameter of the focus ring 3 is adapted to the radius of the wafer 1, and the focus is surrounded by the wafer 1. At the same time, the outer diameter of the focus ring 3 is greater than or at least equal to the radius of the top surface of the susceptor 2, ensuring that the surface of the susceptor 2 is completely shielded, and the susceptor 2 is protected from the etching of the plasma 5, thereby avoiding the loss of the susceptor 2. The outer diameter of the focus ring can also be smaller than the radius of the base 2, and an edge ring is disposed outside the focus ring 3 to cover the rest of the base, even extending beyond the edge of the base. The edge ring can be made different from the focus ring material, such as quartz, which can be an insulating material. In this embodiment, the susceptor 2 is formed in a cylindrical shape, and a central portion of the top surface thereof is provided with a cylindrical platform 21 on which the wafer 1 is fixed. The platform 21 is typically an electrostatic chuck that secures the wafer to the base 2. The bottom of the focus ring 3 and the edge on the top surface of the base 2 are further provided with through holes in the base 2 for the upper and lower surfaces of the base 2, and the through holes corresponding to the upper surface of the base 2 are disposed at the base. The edge of the upper surface of the seat 2 corresponds to the position at which the focus ring 3 is disposed. The outer diameter of the focus ring 3 is greater than or at least equal to the radius of the top of the base 2. The wafer 1 and the focus ring 3 are caused to completely cover the susceptor 2 under the wafer raft and the bottom surface of the focus ring 3. When the wafer 1 is etched, the plasma 5 is completely blocked by the wafer 丨 and the top corner ring 3 of the protective susceptor 2 of the form number Α0101, page 7 of 20 1003481209-0 201248676. It will not be hit on the base 2 to extend the service life of the base 2. = Pure 3 is made of a cast material, and the resistance of the semiconductor material is changed according to its own temperature. The conductor or cast body is tested against temperature and temperature or conductor or semiconductor (10) A conductor or semiconductor that is inversely proportional to temperature. Therefore, the impedance of the impedance adjusting material can be changed by adjusting the temperature, and the change in the impedance of the impedance adjusting material causes the impedance of the focus ring 3 to change, and the RF consumption is adjusted from ▲ by controlling the temperature of the focus ring 3. Therefore, this is sufficient to optimize the engraving uniformity and to extend the life of the focus ring 3. . The smooth planar structure facilitates the continuity of the density distribution of the plasma 5, so that the density distribution process of the plasma 5 requires that the top height of the first power focusing ring 3 and the top height of the crystal an be set to the same height, so that the focus ring 3 The top surface and the top surface of the wafer 1 are disposed on the same-horizontal surface so that the plasma 5 on the top surface of the focus ring 3 and the wafer has a smooth density distribution. The height of the focus ring can also be slightly higher or lower than the plane of the wafer to adjust the airflow distribution of the crystal surface, which cooperates with the focus ring of the variable resistor of the present invention to achieve a good adjustment. The σ pedestal 2 is connected with a high-frequency power source and a low-frequency source, so that the susceptor 2 can generate a high-frequency electric field and a high-frequency electric field generated by the low-frequency electric field m to ionize the reaction gas, and ionize the plasma from the reaction gas. At the same time, the susceptor 2 generates a low-frequency electric field, and an electric field force is applied to the plasma 5 ionized in the reaction gas by the low-frequency electric field, and the moving direction of the plasma 5 is controlled to cause the plasma 5 to strike the focus ring 3 and the wafer 1. Illustratively, the focus ring 3 is connected to a temperature regulating device 4, which may employ a cooler or a resistance wire. 100145533 Form No. A0101 Page 8 of 2 201248676 Cooling consists of a refrigerating unit and a cooling tube connected to the refrigerating unit. When the temperature adjusting device 4 employs a cooling, a cooling device of the cooling device is disposed under the base 2, and the base 2 is provided with a through hole communicating with the upper and lower surfaces thereof, and the cooling pipe passes through the base 2 The through hole is passed from the lower surface of the base 2 to the upper surface of the base 2, and the cooling tube is in contact with the lower portion of the focus ring 3, as shown in Fig. 4, closely fitting the outer surface of the focus ring 3. The refrigeration unit controls the temperature of the focus ring 3 through a cooling pipe. When the temperature adjusting device 4 employs a resistance wire, both ends of the resistance wire are disposed under the lower surface of the base 2, and the power supply is connected to both ends. At the same time, the susceptor 2 is provided with a through hole communicating with the upper and lower surfaces thereof, and the resistance wire is disposed on the upper surface of the susceptor 2 through the through hole * a piece of the resistance wire in the part of the resistance wire is closely attached to Focus on the outer surface of the bottom of the ring 3 as shown in Figure 4. The electric resistance generates heat after being energized, and heat is transmitted to the focus ring 3 through a piece of electric resistance wire closely attached to the focus ring 3, and the temperature of the focus ring 3 is adjusted. In combination with a variation, the temperature adjusting device 4 and the focus ring 3 are additionally described. A connection method. In this embodiment, the base 2 is formed in a cylindrical shape, and a cylindrical platform 21 is disposed on a central portion of the top surface thereof. The wafer 1 is fixed on the circular-shaped platform 21, and is disposed in the base 2 There are through holes that connect the upper and lower surfaces of the base 2. The temperature adjusting device 4 includes portions respectively disposed on the upper and lower surfaces of the base 2, and the portions respectively disposed on the upper and lower surfaces of the base 2 are connected through the through holes of the base 2, as shown in FIG. 5, and the temperature adjusting device 4 can be used. Cooling or resistance wire. 100145533 Form No. A0101 Page 9 of 20 1003481209-0 201248676 Cooling consists of a cooling unit and a cooling tube connected to the cooling unit. When the temperature adjusting device 4 employs a cooling, a cooling device of the cooling device is disposed under the base 2, and the base 2 is provided with a through hole communicating with the upper and lower surfaces thereof, and the cooling pipe passes through the base 2 The through hole is opened from the lower surface of the base 2 to the upper surface of the base 2. A part of the duct of the cooling pipe is arranged in the focus ring 3 in close contact with the inside of the focus ring 3. The refrigeration unit controls the temperature of the focus ring 3 through a cooling pipe. When the temperature adjusting device 4 is a resistance wire, both ends of the resistance wire are disposed under the lower surface of the susceptor 2, and are connected to the power source, and the susceptor 2 is provided with a through hole communicating with the upper and lower surfaces thereof, and the resistance wire passes through the through hole. A part of the electric resistance wire is disposed above the upper surface of the susceptor 2, and a part of the electric resistance wire of the partial electric resistance wire is disposed in the focus ring 3, and the electric resistance wire is in close contact with the inside of the focus ring 3. The electric resistance generates heat after being energized, and a resistance wire which is disposed in the focus ring 3 in contact with the focus ring 3 conducts heat to the focus ring 3 to adjust the temperature of the focus ring 3. Another embodiment of a modulatable focus ring of the present invention will now be described. As shown in Fig. 6, the focus ring 3 is formed in a ring-shaped structure which is made of a material close to the wafer 1. The focus ring 3 is wrapped around the outer side wall of the wafer 1. The radius of the wafer 1 is smaller than the radius of the top surface of the susceptor 2, and the inner diameter of the focus ring 3 is adapted to the radius of the wafer 1. In the present embodiment, the susceptor 2 is formed in a cylindrical shape, and a cylindrical stage 21 is provided on the central portion of the top surface thereof, and the wafer 1 is stably placed on the cylindrical stage 21. The focus ring 3 is sleeved on the outer side wall of the wafer 1. The bottom of the focus ring 3 is closely attached to the edge portion on the top surface of the base 2. The edge portion on the top surface is not provided on the top surface of the base 2. A portion of the cylindrical platform 21. 100145533 Form No. A0101 Page 10 of 20 1003481209-0 201248676 The focus ring 3 is doped with an impedance adjusting material 'The impedance adjusting material uses a conductor or a semiconductor' to change the impedance of the focus ring 3 in the present invention as a function of its temperature . The top height of the focus ring 3 is set to the same height as the top height of the wafer cassette, so that the top surface of the focus ring 3 and the top surface of the wafer cassette are disposed on the same-horizontal surface, so that the focus ring 3 and the top surface of the wafer 1 are The upper plasma 5 has a smooth density distribution.
基座2連接有高頻電場和低頻電場，使基座2可在其周圍 產生高頻電場和低頻電場。基座產生高頻電場，對反應 氡體進行電離，從反應氣體中電離出等離子體5 ^同時， 基座2產生低頻電場，通過低頻電場對反應氣體中電離出 來的等離子體5施加電場力，控制等離子體5的運動方向 ，使等離子體5打向聚焦環3和晶圓1。 聚焦環3連接有溫度調節裝置4，該溫度調節裝置4可採用 冷卻器（cooling)或電阻絲。The susceptor 2 is connected to a high frequency electric field and a low frequency electric field so that the susceptor 2 can generate a high frequency electric field and a low frequency electric field around it. The susceptor generates a high-frequency electric field, ionizes the reaction body, and ionizes the plasma from the reaction gas. At the same time, the susceptor 2 generates a low-frequency electric field, and an electric field force is applied to the plasma 5 ionized in the reaction gas by the low-frequency electric field. The direction of motion of the plasma 5 is controlled such that the plasma 5 strikes the focus ring 3 and the wafer 1. The focus ring 3 is connected to a temperature regulating device 4, which can employ a cooling or a resistance wire.
冷卻器（cooling)包含製冷裝置，以及與製冷裝置連接 的冷卻管。當溫度調即裝置4採用冷卻器（co〇iing)時 ’冷卻器（cooling)的製冷裝置設置在基座2的下方， 冷卻管由基座2的側邊’從基座2的下方通至基座2的上方 。冷卻管與聚焦環3的側邊相接觸，如第4圖所示，緊密 貼合聚焦環3的外表面。製冷裝置通過冷卻管對聚焦環3 進行溫度控制。 當溫度調節裝置4採用電阻絲時，電阻絲的兩端設置在基 座2的下表面下’並兩端連接電源。電阻絲由基座2的侧 邊通向基座2的上表面上方，該電阻絲貼合在聚焦環3的 侧面，如第4圖所示’緊密貼合聚焦環3的外表面。電阻 100145533 表單编號A0101 第11頁/共20頁 1003481209-0 201248676 絲通電後產生熱量，通過與聚焦環3緊密貼合的一段電阻 絲對聚焦環3進行熱傳導，調節聚焦環3的溫度。 同樣，溫度調節裝置4與聚焦環3的連接方式還可以採用 另一種實施方式。 如第5圖所示，溫度調節裝置4可採用冷卻器（cooling )或電阻絲。 冷卻器（cooling)包含製冷裝置，以及與製冷裝置連接 的冷卻管。當溫度調節裝置4採用冷卻器（cooling)時 ，冷卻器（cooling)的製冷裝置設置在基座2的下方， 冷卻管通過基座2的側邊由基座2的下方連通至基座2的上 方。該冷卻管的部分管道串設在聚焦環3内部，與聚焦環 3的内部緊密接觸。製冷裝置通過冷卻管對聚焦環3進行 溫度控制。 當溫度調節裝置4採用電阻絲時，電阻絲的兩端設置在基 座2的下方，其兩端連接電源。電阻絲通過基座2的侧邊 由基座2的下方連通至基座2的上方，該電阻絲中的一段 串設在聚焦環3内部，該段電阻絲與聚焦環3内部緊密接 觸。電阻絲通電後產生熱量，通過設置在聚焦環3中與聚 焦環3接觸的一段電阻絲，對聚焦環3進行熱傳導，調節 聚焦環3的溫度。 通過上述溫度控制裝置4實現對聚集環3溫度的調節，可 以使聚集環3的溫度可以在室溫（10-20°C)到上百度如 200 °C之間可調。足夠大的溫度可調空間可以獲得更大聚 集環阻抗可調範圍。所以要實現本發明通過調節聚焦環3 溫度範圍來調節阻抗分佈進而獲得不同的電場分佈的功 能溫度範圍必須足夠大，溫度調節範圍要超過50°C才能 100145533 表單編號A0101 第12頁/共20頁 1003481209-0 201248676 變等離怖濃度分佈。進―步的大祕。c度或 Μ差才能獲得較佳的等離子分佈改變。現有技 在有聚焦環3的溫度調節裝置4,但是其目的主要是控 個穩定的範圍内，比如在以防止 =圍變化太大影響整體反應調試，或者溫度太高反 妙％日的氟碳化合物在靠近晶圓1的聚焦環3處解離， 二^的圓1側面和背面重新結合成聚合物形成對晶圓1 的污染。The cooling unit includes a refrigeration unit and a cooling pipe connected to the refrigeration unit. When the temperature adjustment means that the device 4 is a cooler, a 'cooling cooling device is disposed below the base 2, and the cooling pipe is passed from the lower side of the base 2 to the side of the base 2 Above the base 2. The cooling tube is in contact with the side of the focus ring 3, as shown in Fig. 4, closely fitting the outer surface of the focus ring 3. The refrigeration unit controls the temperature of the focus ring 3 through a cooling pipe. When the temperature adjusting device 4 employs a resistance wire, both ends of the resistance wire are disposed under the lower surface of the base 2 and the power supply is connected to both ends. The electric resistance wire leads from the side of the base 2 to the upper surface of the base 2, and the electric resistance wire is fitted to the side of the focus ring 3, as shown in Fig. 4, to closely fit the outer surface of the focus ring 3. Resistor 100145533 Form No. A0101 Page 11 of 20 1003481209-0 201248676 The wire generates heat after being energized, and conducts heat to the focus ring 3 through a piece of resistance wire closely attached to the focus ring 3 to adjust the temperature of the focus ring 3. Similarly, the manner in which the temperature adjusting device 4 is connected to the focus ring 3 can be in another embodiment. As shown in Fig. 5, the temperature adjusting device 4 may employ a cooling or a resistance wire. The cooling unit includes a refrigeration unit and a cooling pipe connected to the refrigeration unit. When the temperature adjusting device 4 employs a cooling, a cooling device of the cooling device is disposed below the base 2, and the cooling pipe is communicated to the base 2 through the lower side of the base 2 through the side of the base 2. Above. A part of the duct of the cooling pipe is arranged inside the focus ring 3 in close contact with the inside of the focus ring 3. The refrigeration unit controls the temperature of the focus ring 3 through a cooling pipe. When the temperature adjusting device 4 employs a resistance wire, both ends of the resistance wire are disposed under the base 2, and both ends thereof are connected to a power source. The electric resistance wire is passed from the lower side of the susceptor 2 to the upper side of the susceptor 2 through a side of the susceptor 2, and a section of the electric resistance wire is disposed inside the focus ring 3, and the electric resistance wire is in close contact with the inside of the focus ring 3. The electric resistance generates heat after being energized, and the focus ring 3 is thermally conducted by a piece of electric resistance wire provided in the focus ring 3 in contact with the focus ring 3 to adjust the temperature of the focus ring 3. The temperature of the collecting ring 3 is adjusted by the above temperature control means 4 so that the temperature of the collecting ring 3 can be adjusted from room temperature (10-20 ° C) to above Baidu, such as 200 °C. A sufficiently large temperature-adjustable space allows for a larger adjustable loop impedance range. Therefore, in order to achieve the present invention, the temperature range of the focus ring 3 can be adjusted by adjusting the temperature range of the focus ring 3 to obtain different electric field distributions. The temperature range must be sufficiently large to exceed 50 ° C. 100145533 Form No. A0101 Page 12 of 20 1003481209-0 201248676 Variable vorticity concentration distribution. The secret of entering the step. A better plasma distribution change can be obtained with c degrees or coma. The prior art has a temperature adjusting device 4 with a focus ring 3, but its purpose is mainly to control a stable range, for example, to prevent the whole reaction from being adjusted too much to prevent the change of the circumference, or the temperature is too high, and the fluorocarbon is too high. The compound dissociates near the focus ring 3 of the wafer 1, and the sides and back sides of the circle 1 recombine into a polymer to form a contamination of the wafer 1.
=上述結構說明本發明一種可調製的聚焦 本衣T播雜阻抗調節材料 ^ ""π印竹竹，孩阻机調節材料採用半導 :半導體的阻抗會隨其溫度變化而變化。 熱傳導調節聚焦環3的溫度狀態，使 ’、、、 工作在第一溫度。該聚焦環3的溫度變化導致聚 雜的阻抗調節材料的溫度改變，使得阻抗調節 辘在聚隹二隨其溫度變化而改變，由於阻抗調節材料摻= The above structure illustrates a modulatable focus of the present invention T-adhesive impedance adjusting material ^ "" π印竹竹, the resistance of the device is semi-conductive: the impedance of the semiconductor will vary with its temperature. The heat conduction adjusts the temperature state of the focus ring 3 so that ', ,, operates at the first temperature. The change in temperature of the focus ring 3 causes a change in the temperature of the complex impedance adjusting material, so that the impedance adjustment 改变 changes in the polyfluorene as its temperature changes due to the impedance adjusting material doping.
的阻抗產中阻抗調節材料的阻抗改變導致聚焦環3 二：改變。實現通過溫度調節裝置4對聚焦環3的 阻抗進行調製。 聚焦壞3阻抗的改變，對基座⑽圍產生的高頻電場和低 頻《造絲響，改變高頻電場㈣場_疏密程度和 電場線方肖冑製低頻電場肢應氣體中等離子體5的電 場作用⑯而改變打在晶圓i邊緣和聚焦環3上表面上等 離子體5的入射能量分佈，以產生第-分佈的等離子體5 〇 100145533 再控制溫度調節裝置4使半導體聚集環3工作在第 表單编號A〇101 第13頁/共20頁 —溫度 1003481209-0The impedance of the impedance-producing material changes the impedance of the material resulting in a focus ring 3: change. The impedance of the focus ring 3 is modulated by the temperature adjustment device 4. Focusing on the change of the impedance of the bad 3, the high-frequency electric field generated by the pedestal (10) and the low frequency "making the sound of the wire, changing the high-frequency electric field (four) field _ the degree of density and the electric field line 胄 胄 低频 低频 低频 低频 低频 低频 低频 低频 低频The electric field acts 16 to change the incident energy distribution of the plasma 5 on the edge of the wafer i and the upper surface of the focus ring 3 to generate a first-distributed plasma 5 〇 100145533 and then control the temperature adjusting device 4 to operate the semiconductor collecting ring 3 In the first form number A〇101 page 13 / total 20 pages - temperature 1003481209-0
I 201248676 ，以上述的流程產生第二分佈的等離子體5。其中第一溫 度與第二溫度為任意溫度，其兩者之間按滿足上述特定 的溫度差。 综上所述，通過溫度調節裝置4對聚焦環3進行溫度控制 ，實現對晶圓1邊緣和聚焦環3上表面上的等離子體5的密 度分佈進行調製，通過溫度調節裝置4調節，將晶圓1邊 緣和聚焦環3上表面上的等離子體5的密度分佈均勻化調 製。 儘管本發明的内容已經通過上述優選實施例作了詳細介 〇 紹，但應當認識到上述的描述不應被認為是對本發明的 限制。在本領域技術人員閱讀了上述内容後，對於本發 明的多種修改和替代都將是顯而易見的。因此，本發明 的保護範圍應由所附的申請專利範圍來限定。 【圖式簡單說明】 [0005] 第1圖為現有技術中晶圓刻蝕工藝的裝置結構示意圖； 第2圖為現有技術中晶圓表面的等離子體密度分佈示意圖 ； Ο 第3圖為根據本發明的一個具體實施例的可調製的聚焦環 的結構不意圖， 第4圖為根據本發明的一個具體實施例的可調製的聚焦環 的聚焦環與溫度調節裝置的設置示意圖； 第5圖為根據本發明的一個具體實施例的可調製的聚焦環 的聚焦環與溫度調節裝置的另一種設置實施例的示意圖 9 第6圖為根據本發明的一個具體實施例的可調製的聚焦環 100145533 的一種實施例的結構示意圖。 表單編號A0101 第14頁/共20頁 1003481209-0 201248676 t主要元件符號說明】 [0006] 1 晶圓 2 基座 3 聚焦環 4 溫度調節裝置 5 等離子體 21 平臺 100145533 表單編號A0101 第15頁/共20頁 1003481209-0I 201248676, generating a second distributed plasma 5 in the above process. The first temperature and the second temperature are arbitrary temperatures, and the specific temperature difference is satisfied between the two. In summary, the temperature control device 4 performs temperature control on the focus ring 3 to modulate the density distribution of the plasma 5 on the edge of the wafer 1 and the upper surface of the focus ring 3, and is adjusted by the temperature adjusting device 4 to crystallize The density distribution of the plasma 5 on the edge of the circle 1 and the focus ring 3 is uniformly modulated. While the present invention has been described in detail by the foregoing preferred embodiments, it should be understood that Various modifications and alterations of the present invention will be apparent to those skilled in the art. Therefore, the scope of the invention should be limited by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS [0005] FIG. 1 is a schematic view showing the structure of a wafer etching process in the prior art; FIG. 2 is a schematic diagram showing a plasma density distribution of a wafer surface in the prior art; The structure of the modulatable focus ring of one embodiment of the invention is not intended, and FIG. 4 is a schematic view showing the arrangement of the focus ring and the temperature adjustment device of the modulatable focus ring according to an embodiment of the present invention; FIG. 6 is a schematic diagram of another embodiment of a focus ring and temperature adjustment device of a modulatable focus ring in accordance with an embodiment of the present invention. FIG. 6 is a view of a modulatable focus ring 100145533 in accordance with an embodiment of the present invention. A schematic structural view of an embodiment. Form No. A0101 Page 14 of 20 1003481209-0 201248676 t Main component symbol description] [0006] 1 Wafer 2 Base 3 Focus ring 4 Temperature adjustment device 5 Plasma 21 Platform 100145533 Form No. A0101 Page 15 / Total 20 pages 1003481209-0