JP3172759B2 - Plasma processing method and plasma processing apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a plasma processing method and a plasma processing method.
The present invention relates to a plasma processing apparatus .

[0002]

2. Description of the Related Art Conventionally, for example, a parallel plate type plasma processing apparatus using a high frequency has been widely used as a plasma processing apparatus for performing a plasma processing on an object to be processed such as a semiconductor wafer in a processing chamber. The parallel plate type plasma processing apparatus will be described by taking, for example, reactive ion etching (RIE) as an example. This apparatus applies high frequency power to one or both of a pair of upper and lower electrodes, and applies a high frequency power between the two electrodes. Plasma is generated, and the surface of the object is irradiated with reactive ions in the plasma by a potential difference between the potential of the plasma and the self-bias potential of the object. It is configured to perform an etching process by a chemical reaction.

However, in the case of a conventional parallel plate type plasma processing apparatus, for example, 100
Since the etching is performed at a relatively high gas pressure of mTorr to 1 Torr, the mean free path of ions is short, and with the recent ultra-high density of semiconductor devices, ultra-fine processing from the half micron to quarter micron level has been realized. Then, it is difficult to concentrate ions on the material to be etched, and it is difficult to selectively etch the material to be etched. Recently, the diameter of an object to be processed has been increasing, and it is necessary to generate uniform plasma over the entire region of the object to be processed. However, since the mean free path is short, it is difficult to generate uniform plasma. Further, ions in the plasma collide with the electrodes and the like to sputter them, and impurities are generated from the electrodes and the like, and the impurities are contaminated on the object to be processed.

Therefore, recently, various plasma processing apparatuses for generating high-density plasma under a high vacuum, for example, an electron cyclotron resonance (ECR) plasma processing apparatus for generating plasma by utilizing a synergistic effect of a microwave and a magnetic field. Also, a high-frequency inductively coupled plasma processing apparatus using high-frequency electromagnetic energy has been developed. In these devices, high-density plasma can be obtained even under a low pressure of the order of 0.1 mTorr, and because of the low pressure, the mean free path is long, and ions hardly collide with other particles.
Because of the effective use of ions, these devices are attracting attention as meeting recent demands for ultra-fine processing.

[0005]

However, in the case of a conventional ECR plasma processing apparatus or a high-frequency inductively coupled plasma processing apparatus, high-density plasma can be obtained even under a low pressure of the order of 0.1 mTorr. Since the pressure is too low under a very low pressure, there is a problem that, for example, when an etching process is performed on an object to be processed, the etching rate is low and the processing efficiency is poor. To solve this, increasing the input power, promoting the resonance of the active species, or increasing the gas pressure, the mean free path gradually decreases as the gas pressure increases. However, there has been a problem that ions collide with molecules in the ion sheath, and the ions are lost, resulting in radical richness and easy isotropic etching.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. As a high-frequency inductive coupling system, a uniform ion-rich system which is rich in ions even at a relatively high gas pressure and suppresses the generation of radicals.
It is an object of the present invention to provide a plasma processing method and a plasma processing apparatus capable of stably obtaining a high-density plasma and increasing the etching rate and the selectivity.

[0007]

Means for Solving the Problems The present inventors have conducted various studies on the optimum conditions of plasma processing, particularly using a high-frequency inductively coupled plasma processing apparatus. As a result, under a certain low pressure, the generation of radicals is suppressed and the ion-rich state is reduced. It has been found that a suitable plasma can be obtained and a plasma treatment such as etching can be effectively performed. In addition, under such a pressure, the process window is wider than before, the gas pressure can be easily controlled, and stable plasma processing can be continuously performed with respect to temporal or synchronous fluctuation of the pressure. Was found.

[0008] The present invention has been made based on the above findings, and a plasma processing method according to a first aspect of the present invention provides a plasma processing method comprising a spiral disposed outside an upper surface of a processing chamber via an insulating material.
The high-frequency power is applied to the can-shaped antenna to generate inductive coupling plasma processing gas above the processing chamber, the plasma processing method for performing a predetermined plasma process on a target object disposed in the processing chamber, the swirl Shaped antenna
The first antenna and the second antenna disposed inside the first antenna.
And the first antenna is higher than the second antenna
Apply high-frequency power to make the object to be processed 10 to 100 mTor.
It is configured to process at a gas pressure of r.

A plasma according to a second aspect of the present invention.
The processing apparatus includes a processing chamber for maintaining a predetermined degree of vacuum, and a processing chamber.
A mounting table which is placed in the room and on which the object to be processed is mounted;
The above processing is performed to process the workpiece supported by the
Spiral-shaped arrangement placed on the outside of the upper surface of the
An antenna and a high-frequency circuit for applying high-frequency power to the antenna
And a high frequency power supply to the spiral antenna.
Is applied to the processing gas in the processing chamber.
Generated in the processing chamber
In plasma processing equipment that performs constant plasma processing,
The spiral antenna includes a first antenna and a first antenna.
And a second antenna disposed inside the
The high frequency power supply is a second power supply for applying high frequency power to the first antenna.
1 high frequency power supply and 2nd antenna lower than 1st antenna
And a second high-frequency power supply for applying high-frequency power .

[0010]

According to the first and second aspects of the present invention, the first and second spiral antennas are formed in a state where the processing gas in the processing chamber is adjusted to a gas pressure of 10 to 100 mTorr.
The inside to the outside of the first antenna when high-frequency power is applied
When high- frequency power higher than that of the second antenna is applied and respective electromagnetic waves are applied from outside the processing chamber via an insulating material to generate inductively coupled plasma in the processing chamber, the first antenna
Gives stronger electromagnetic waves than the inner second antenna,
The electron temperature of the plasma becomes 2 to 5 eV in the vicinity of the inner wall of the substrate, the generation of radicals is suppressed, a high-density plasma rich in ionic etchant is generated , and the second antenna is connected to the first antenna.
Provides weaker electromagnetic waves than antennas
Is low density but high in ionic etchant
Generates plasma, high-density plasma near the inner wall of the processing chamber
Diffuses into the processing chamber to create high-density plasma in the processing chamber.
Homogenized, a predetermined plasma treatment to the object to be processed in the processing chamber by a uniform high-density plasma rich in active etchant
It can be applied uniformly .

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the embodiments shown in FIGS. Before describing the plasma processing method of the present invention, first, a plasma etching apparatus suitably used in the plasma processing method of the present invention will be described with reference to FIGS. As shown in FIG. 1, the plasma etching apparatus used in the plasma processing method of the present invention includes a cylindrical or rectangular processing chamber 1 made of a conductive material such as aluminum. A column-shaped mounting table 2 on which an object to be processed, for example, a semiconductor wafer W is mounted, is provided at the bottom of the processing chamber 1 via a lifting mechanism 3 so as to be able to move up and down. The elevating mechanism 3 passes through an opening at the center of the bottom of the processing chamber 1 and is electrically insulated from the processing chamber 1 by an insulating material 4 made of, for example, quartz glass, ceramics, or the like. Also,
Exhaust pipes 1A, 1A connected to a vacuum pump (not shown) are attached to the bottom of the processing chamber 1 around the mounting table 2, and the gas pressure in the processing chamber 1 is maintained at a predetermined degree of vacuum by the vacuum pump. Like that.

The mounting table 2 includes a susceptor support 2A formed in a disk shape of aluminum or the like, and a susceptor 2 formed on the susceptor support 2A in a detachable manner with bolts 2B and formed of aluminum or the like.
C and the susceptor 2C is attached and detached for easy maintenance.

A cooling jacket 5 is provided in the susceptor support 2A, and a coolant supply source (not shown) for supplying a coolant such as liquefied nitrogen is connected to the cooling jacket 5 via a coolant introduction pipe 6. The coolant is supplied from the coolant supply source to the cooling jacket 5 via the coolant introduction pipe 6. The cooling medium in the cooling jacket 5 is a susceptor 5.
After being cooled and vaporized, it is discharged to the outside through the refrigerant outlet pipe 7. As a refrigerant, for example, -196
When liquefied nitrogen at ℃ is used, the cold heat is transmitted from the cooling jacket 5 to the semiconductor wafer W via the susceptor 2C, and the processing surface can be controlled to be cooled to, for example, about −196 ° C. to room temperature.

The susceptor support 2A and the susceptor 2C
Is connected to a gas source 9 via a gas passage 8 penetrating them, and supplies a heat-transfer gas (back cooling gas) such as He from the gas source 9 via the gas passage 8 to each component. The heat transfer property of the joint surface is enhanced to increase the cooling efficiency of the cooling jacket 5. A focus ring 10 is attached to a peripheral portion of the upper surface of the susceptor 2C. The focus ring 10 is formed of a high-resistance material such as quartz glass, ceramic, silicon (single crystal, polycrystal, or amorphous) or a good conductor such as an alumite coating material of aluminum or amorphous carbon. It has a role of effectively entering the semiconductor wafer W.

An electrostatic chuck 11 having substantially the same diameter as the semiconductor wafer W is attached to the wafer mounting portion on the upper surface of the susceptor 2C. This electrostatic chuck 11
Is composed of, for example, two insulating members such as polyimide resin films and ceramics, and a conductive film 12 interposed therebetween. The conductive film 12 is connected to a variable DC power supply 14 via a lead wire 13, and the semiconductor wafer W is generated by an electrostatic force generated by applying a voltage to the conductive film 12 from the variable DC power supply 14.
Is held on the upper surface of the electrostatic chuck 11 by suction. The susceptor 2C has a high frequency power supply 1
5 is connected via a matching capacitor 16, and high-frequency power of, for example, 20 to 400 KHz is applied from the high-frequency power supply 15 via the matching capacitor 16,
The semiconductor wafer W is configured to be self-biased.

On the lower surface of the susceptor 2C between the cooling jacket 5 and the electrostatic chuck 11, a temperature adjusting heater 18 connected to a power supply 17 is provided.
The temperature control heater 18 is adjusted by adjusting the power supplied to the heater 18.
The cooling action from the cooling jacket 5 is adjusted via the. The semiconductor wafer W can be adjusted to a temperature of 0 ° C. or higher by the temperature adjusting heater 18.

The processing chamber 1 facing the upper surface of the mounting table 2
The top surface is made of insulating material 19 made of quartz glass, ceramic, etc.
Therefore, it is formed. The inner surface (inside the chamber) of the insulating material 19 may be coated with high-purity silicon or the like. A high-frequency antenna 20 formed of a conductor such as copper, aluminum, or stainless steel as a high-frequency electrode is disposed on the outer surface of the insulating material 19. The high-frequency antenna 20 includes a spiral first antenna unit 201 and a ring-shaped second antenna unit 202 disposed inside the first antenna unit 201, as is apparent from FIG. ing. And the first
Inner terminal 201A and outer terminal 201 of antenna section 201
A first high-frequency power supply 21A for plasma generation is connected between B through a matching box 22A, and is connected to the first high-frequency power supply 21A via the matching box 22A.
It is configured to apply a high frequency electromagnetic wave of 3.56 MHz. Also, the inner terminal 20 of the second antenna unit 202
A first high frequency power supply 21B for plasma generation is connected between 2A and the outer terminal 202B via a matching box 22B, and applies a 13.56 MHz high frequency electromagnetic wave from the second frequency power supply 21B via the matching box 22B. It is configured as follows. Then, it is preferable to apply a high-frequency power of, for example, 500 to 1500 W to the high-frequency antenna 20. The high-frequency power applied to the high-frequency antenna 20 is not limited to 13.56 MHz.
0 KHz, 6.35 MHz, 27.12 MHz, 40.68 M
High frequency power of Hz may be used.

A gas supply section 23 made of quartz glass, ceramic, or the like is attached to the inner surface of the top surface made of the insulating material 19. This gas supply unit 23
Is formed in a hollow disk shape having substantially the same diameter as the susceptor 2C,
A large number of holes are dispersedly formed on the lower surface. A gas supply pipe 24 is attached to the center of the top surface, and processing gas supply sources 25A and 25B are connected to the gas supply pipe 24 via a mass flow controller 26. Further, a buffer disk 27 is provided in the gas supply unit 23.
At the center of the buffer disk 27, a projection 28 projecting toward the gas supply pipe 24 is formed. Further, an annular protrusion 29 is attached to the outer peripheral edge of the lower surface of the gas supply unit 23. Therefore, the processing gas is supplied from the supply sources 25A and 25B.
From the gas supply pipe 2 via the mass flow controller 26
4, the processing gas is supplied to the buffer disk 27.
Are dispersed to the entire gas supply unit 23 by the protrusions 28, and go around to the lower surface thereof, and squirt into the processing chamber 1 from many holes.
The annular projection 29 allows the semiconductor wafer W to be evenly supplied to the semiconductor wafer W.

A transmission window 30 formed of a transparent material such as transparent quartz glass is attached to a side wall of the processing chamber 1, and transmits light in the processing chamber 1 to an optical sensor 32 via an optical system 31. , A signal relating to an emission spectrum generated in the processing chamber 1 is transmitted to the controller 33. Further, a Langmuir probe (not shown) is attached to the processing chamber 1 so that the electron temperature of plasma can be measured by the Langmuir probe.
Further, a sensor 34 for measuring the pressure or the like in the processing chamber 1 is attached to a side wall of the processing chamber 1, and a signal related to the pressure or the like is transmitted from the sensor 34 to the controller 33. The controller 33 outputs a control signal based on a feedback signal from these sensors or a preset set value to the plasma generating high-frequency power supplies 21A and 21A.
B, transmitted to the bias high-frequency power supply 15, the coolant source 9, the temperature control power supply 17, the back cooling gas source 9, the processing gas mass flow controller 26, and the like to optimally control the operating environment of the plasma processing apparatus. Have been.

When an oxide film such as a silicon oxide film or a PSG film formed on a semiconductor wafer W is etched using the above-described plasma processing apparatus, the processing gas may be, for example, CHF ₃ , CF ₄ , C ₂ F. ₆ , fluorine gas such as C ₃ F ₈ is preferably used. These gases may be used alone or in an appropriate combination to be mixed, and further, an additional gas such as carbon monoxide or oxygen may be added to these gases to increase the selectivity with respect to the base material. As a base material,
For example, polysilicon, amorphous silicon, silicon nitride, titanium nitride, and the like can be given. When etching a silicon film, a fluorine-based gas such as CF ₄ or a fluorine-chlorine gas such as CCIF ₃ is preferably used. Of course, the processing gas is not limited to these gases.

Next, an example of etching a silicon oxide film using the above-described plasma processing apparatus will be described with reference to FIGS. 3 to 5 together with an embodiment of the plasma processing method of the present invention. To do so, a high frequency antenna 20 disposed outside the processing chamber 1 via an insulating material 19 is supplied from its high frequency power sources 21A, 21B to matching boxes 22A, 22B.
And a high-frequency power of 500 to 1500 W through the bias high-frequency power supply 16 and 100 to 300 W
W high-frequency power is applied, and for example, CHF3
And an etching process is performed on the silicon oxide film formed on the semiconductor wafer W at a gas pressure of 10 to 100 mTorr.

First, the mounting table 2 is set at an appropriate position by driving the elevating mechanism 3 in the processing chamber 1 and then the semiconductor wafer W is mounted on the electrostatic chuck 11. The wafer W is fixed on the susceptor 2C of the mounting table 2. Then, the inside of the processing chamber 1 is brought into a vacuum atmosphere by a vacuum pump (not shown). Thereafter, the semiconductor wafer W is cooled by the cooling jacket 5 to a desired temperature, for example, 15 ° C., while supplying a back-cooling gas for heat transfer to the back surface of the semiconductor wafer W and each joint of the mounting table 2. Subsequently, for example, from processing gas supply 25A, for example, pure CH
F ₃ gas is supplied from the gas supply unit 23 into the processing chamber 1.

Next, the first and second antennas 201, 201,
Matching box 22 from high frequency power supplies 21A, 21B
A, 500 at 13.56 MHz each via 22B
A high-frequency power of 3500 W is applied in the same phase to give an electromagnetic wave to the processing chamber 1 and a 13.56 M
A high-frequency power is applied from a high-frequency power supply 15 of 10 to 300 W at a frequency Hz via a DC component cutting capacitor 16.
At this time, if the power of the first antenna unit 201 is relatively higher than the power of the second antenna unit 202, a relatively high current flows through the first antenna unit 201, and the electric current flows near the inner wall of the processing chamber 1 from the inside. A strong electromagnetic wave is applied to the CHF ₃ gas, and a higher density plasma is generated near the inner wall than inside. As a result, the surrounding high-density plasma diffuses radially inward to make the plasma in the entire processing chamber 1 uniform, and diffuses uniformly in the processing surface of the semiconductor wafer W and spreads over the entire surface of the semiconductor wafer W. Uniform etching can be performed.

At this time, the mass controller 26 is further controlled by the controller 33 to adjust the flow rate and to change the gas pressure variously by using an automatic pressure adjusting device (not shown). The electron temperature was measured with a Langmuir probe, and the gas dependence of the electron temperature was observed. As a result, the result shown in FIG. 3 was obtained. According to FIG.
At a gas pressure of less than 0 mTorr, the electron temperature rises sharply from 4.3 eV if the gas pressure decreases, and in the range of 10 to 100 mTorr (shown up to 50 mTorr in the figure), the electron temperature is 4 eV even if the gas pressure increases. From 1 to 2 eV, and it was found that the electron temperature was stable in this range. Incidentally, the binding energy of the molecule for usually from 1 to several eV, if the electron temperature is 2～4EV, as the electron energy is sufficient to generate a plasma by cutting the binding energy of CHF ₃ molecules.

As is clear from these results, the gas pressure is 1
If the pressure becomes lower than 0 mTorr, the electron temperature fluctuates greatly with a slight pressure fluctuation, which greatly affects the plasma. Therefore, it is difficult to control the gas pressure at the time of etching, and there is a possibility that stable etching cannot be performed. On the other hand, if the gas pressure is 10
If the electron temperature is in the range of 100 to 100 mTorr, the electron temperature is gently fluctuated in the range of 4.3 eV to 2 eV, and a stable plasma can be obtained. Can be applied. On the other hand, if the gas pressure exceeds 100 mTorr, the characteristics of the high-frequency inductive coupling method cannot be utilized, which is not preferable. Also,
At a gas pressure exceeding 100 mTorr, the conventional parallel plate type plasma processing apparatus is more excellent in cost and characteristics.

Further, as a result of observing the dependence of the emission intensity on the gas pressure, the result shown in FIG. 4 was obtained. According to FIG.
The emission intensity of the two radicals is uniformly weakened as the pressure is decreased, while the emission intensity of CF is increased as the pressure is decreased. However, it has a maximum value near 10 mTorr. Further, the emission intensity of the F, C, and H radicals sharply increases as the pressure decreases. This means that CHF ₃ has F, C,
H is shown. That is, if the pressure is reduced to less than 10 mTorr, it becomes difficult to obtain ions necessary for etching, and it is shown that generation of F, C, and H radicals is suppressed in the range of 10 to 100 mTorr. Also, 1
In the range of 0 to 100 mTorr, C increases as the pressure increases.
This indicates that the F ₂ radical gradually increases and radical polymerization is likely to occur. This is extremely important in obtaining highly selective etching for the base.

FIG. 5 shows the result of examining the electron temperature dependence of the emission intensity. As is clear from the figure, the emission intensities of the F, C, and H radicals increase as the electron temperature increases, and it indicates that the electron intensity sharply increases when the electron temperature exceeds 5 eV. That is, when the electron temperature is in the range of 2 to 5 eV, the F, C, and H radicals increase relatively slowly as the electron temperature increases,
If it exceeds 5 eV, the F, C, and H radicals rapidly increase, suggesting that it is not preferable.

Based on the above results, the etching of the silicon oxide film having a thickness of about 1 μm of the semiconductor wafer W resulted in about 2 μm.
The etching was completed in minutes, and a selectivity of 40 or more with respect to silicon as a base material could be obtained. The etching shape was excellent, and it was found that the shape was almost vertical. This provides an important solution to the self-aligned contact hole process that is rapidly desired in the future.
If this phenomenon is used, only the oxide film can be removed, and the nitride film and the silicon film can be left.

As described above, according to this embodiment, the semiconductor wafer W is processed at a gas pressure of 10 to 100 mTorr,
Since etching is performed in a region where the electron temperature is unlikely to be high, gas pressure can be easily controlled. Even at relatively high gas pressure, high-density plasma that is rich in ions and suppresses radical dissociation can be obtained stably. And the etching rate and the selectivity can be increased. Also,
Similar results can be obtained by treating the semiconductor wafer W with plasma having an electron temperature of 2 to 5 eV.

In the above embodiment, the spiral high-frequency antenna is provided on the top surface of the processing chamber 1. However, the method of the present invention is not limited to such a type. May be mounted on the peripheral surface of the processing chamber via an insulating material. In short, the method of the present invention can be carried out using various types of high-frequency inductively coupled plasma processing apparatuses as long as the high-frequency antenna is disposed outside the processing chamber via an insulating material. Further, the high-frequency power to be applied may be controlled by monitoring light, or the power may be controlled by monitoring the electron temperature using a probe.

In the above embodiment, the case of the etching process has been described, but the present invention can be widely applied to the present invention such as a CVD process and an ashing process. Also,
The object to be processed is not limited to a semiconductor wafer.
The present invention can be applied to a CD substrate and the like.

[0032]

According to the first and second aspects of the present invention, the spiral disposed outside the upper surface of the processing chamber via an insulating material.
The high-frequency power is applied to the can-shaped antenna to generate inductive coupling plasma processing gas above the processing chamber, the plasma processing method for performing a predetermined plasma process on a target object disposed in the processing chamber, the swirl Shaped antenna
The first antenna and the second antenna disposed inside the first antenna.
And the first antenna is higher than the second antenna
Apply high-frequency power to make the object to be processed 10 to 100 mTor.
Since the treatment is performed at a gas pressure of r, the gas pressure can be easily controlled, and the high-frequency inductive coupling method is rich in ions even at relatively high gas pressures, and a uniform high-density plasma that suppresses the generation of radicals Can be obtained stably, and the plasma processing method and the plasma processing apparatus which can increase the etching rate and the selectivity can be provided.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an example of a high-frequency inductively-coupled plasma processing apparatus suitably used when performing a plasma processing method of the present invention.

FIG. 2 is a plan view showing a high-frequency antenna of the high-frequency inductively coupled plasma processing apparatus shown in FIG.

3 is a graph showing a relationship between a gas pressure of CHF ₃ plasma generated by the high-frequency inductively coupled plasma processing apparatus shown in FIG. 1 and an electron temperature.

FIG. 4 is a graph showing a relationship between emission intensity of various radicals in CHF ₃ plasma generated by the high-frequency inductively coupled plasma processing apparatus shown in FIG. 1 and gas pressure.

5 is a graph showing the relationship between the emission temperature of various radicals in CHF ₃ plasma generated by the high-frequency inductively coupled plasma processing apparatus shown in FIG. 1 and the electron temperature.

[Explanation of symbols]

 W Semiconductor wafer (object to be processed) 1 Processing chamber 20 High-frequency antenna 21A First high-frequency power supply 21B Second high-frequency power supply 201 First antenna unit 202 Second antenna unit

──────────────────────────────────────────────────続 き Continued on the front page (72) Yoshifumi Tahara, Inventor 2-3-1 Nishishinjuku, Shinjuku-ku, Tokyo Inside Tokyo Electron Limited (72) Inventor Hiroshi Nishikawa 2-3-1 Nishishinjuku, Shinjuku-ku, Tokyo No. Tokyo Electron Co., Ltd. (56) References JP-A-5-206072 (JP, A) JP-A-5-36651 (JP, A) JP-A-63-260035 (JP, A) JP-A-4- 72064 (JP, A) JP-A-3-79025 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 21/3065 H05H 1/46

Claims (2)

(57) [Claims] 1. A high-frequency power is applied to a spiral antenna disposed outside an upper surface of a processing chamber via an insulating material to generate inductively coupled plasma in a processing gas in the processing chamber.
In the plasma processing method for performing a predetermined plasma process on a target object disposed in the processing chamber, the spiral A
The first antenna and the second antenna
Two antennas, and the first antenna has the second antenna
And applying a high frequency power higher than
A plasma processing method characterized in that processing is performed at a gas pressure of 100 mTorr. 2. A processing chamber for maintaining a predetermined degree of vacuum,
A mounting table that is disposed in the processing chamber and mounts the object to be processed;
To process the object supported by this mounting table,
Spiral disposed outside the upper surface of the processing chamber via insulating material
Antenna and a high-frequency power
And a high frequency power supply.
Force to apply inductive coupling
Generates a gap and causes the object to be processed
In a plasma processing apparatus that performs a predetermined plasma processing,
The spiral antenna includes a first antenna and a first antenna.
And a second antenna disposed inside the antenna.
The high frequency power supply applies high frequency power to the first antenna.
The first high-frequency power supply and the second antenna are lower than the first antenna.
Having a second high frequency power supply for applying high frequency power
A plasma processing apparatus characterized by the above-mentioned .