TW201247785A - Curable composition, cured article, optical semiconductor device and polysiloxane - Google Patents

Curable composition, cured article, optical semiconductor device and polysiloxane Download PDF

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TW201247785A
TW201247785A TW101114054A TW101114054A TW201247785A TW 201247785 A TW201247785 A TW 201247785A TW 101114054 A TW101114054 A TW 101114054A TW 101114054 A TW101114054 A TW 101114054A TW 201247785 A TW201247785 A TW 201247785A
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group
integer
polyoxyalkylene
curable composition
composition
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TW101114054A
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Chinese (zh)
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TWI499644B (en
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Kouji Nakanishi
Taichi Tazaki
Kouichi Hasegawa
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Jsr Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

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  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Led Device Packages (AREA)

Abstract

A curable composition, which is containing: polysiloxane (A) having alkenyl group and adhesive group, polysiloxane (B) having per molecule at least two hydrogen atom that is combined with silicon atom (but polysiloxane (A)), and catalyst (C) for the hydrosilylation reaction. It is characterized by the content ratio of polysiloxane (A) is 40 to 90 mass% when total content of all ingredients of the curable composition is 100 mass%. The curable composition of the present invention is capable of forming a hydrosilyl series polysiloxane composition which is having both high adhesiveness for substrates or metal lines, and high Initial luminance of LED etc. Therefore, an optical semiconductor device which is obtained by covering the semiconductor light-emitting element by the cured article obtained from the curable composition, the initial luminance is high, even in the case of undergoing heat cycle, the cured article is having high adhesiveness and could not separate of package and the like.

Description

201247785 六、發明說明: 【發明所屬之技術領域】 本發明係有關於硬化性組成物、硬化物、光半導體 裝置以及聚矽氧烷。 【先前技術】 半導體發光裝置(L E D)的密封劑等所使用的石夕氫化 反應硬化型的聚矽氧烷組成物(以下亦稱為氫矽烷 (ydrosilyl)系聚矽氧烷組成物),被要求提高對封裝 等之黏著性的技術。 作為圖謀提高氫矽烷系聚矽氧烷組成物之黏著性的 技術,已知有在氫矽烷系聚矽氧烷組成物中添加含環氧 基之聚矽氧烷等黏著促進劑的技術。 專利文獻1中記載了一種氫矽烷系聚矽氧烷組成物 ,其相對於作為主劑的有機聚矽氧烷1〇〇重量份,含有 0.01〜50重量份的作為黏著促進劑的具有烯基的含環氧 寻利文獻2中記載了 ’其相對於作為主劑之含有烯基和苯基的有機二= 重量份,含有。.01〜2。重量份的作為黏著促進: 的3每氡基的聚石夕氧烧。 專利文獻3中記載了-種切㈣聚妙氧燒組成物 ,其相對於作為主劑之包含烯基的有機聚矽 質量份,含有0.01〜10質量份的作為點著 70 v刀10〔 基之含環氧基的聚權。1者促進劑的具有稀 [先前技術文獻] 201247785 [專利文獻] [專利文獻1 ]日本特開2007-3270 1 9號公報 [專利文獻2]日本特開2007_008996號公報 [專利文獻3]日本特開2〇丨0 — 229402號公報 【發明内容】 [發明欲解決之課題] 為了提高基板、金屬配線與密封劑的黏著性,有需 要増加作為黏著促進劑之含環氧基的聚矽氧烷的環氧基 含量。但是在使用較多這樣的黏著促進劑的情況下,有 亮度降低之虞。 本發明的課題在於提供一種硬化性組成物,其為氫 石夕烧系聚石夕氧⑥組成物,可形成能兼顧對基板或金屬配 線等的黏著性和亮度的硬化物。 [解決課題之手段] 丰發明為一種硬化性組成物,其為含有具有烯基及 密接性基團的聚石夕氧烧⑷…分子中至少具有兩個與 :夕原子結合的氫原子的聚矽氧烷(B)(但聚矽氧烷㈧除 外)及矽氫化反應用催化劑(C)的硬化性組成物, 徵為以曰該硬化性組成物中所含之全部成分的含量合;: 1〇0質^時’聚石夕氧烧(A)的含有比例為40〜90質量%。 部31=硬化性組成物中,以聚石夕氧院㈧中所含二全 基的含量3 ί〇目莫為1〇〇莫耳%時’較佳為聚碎氧燒(A),婦 莫耳%。〜4耳%,密接性基團的含量較佳為〇.〇1〜1〇 前述硬化性組成物中 前述密接性基團較 佳為具有 201247785 環氧基的基團。 前述硬化性組成物中,前述聚矽氧烷(a)較佳為以下 述化學式表示:201247785 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a curable composition, a cured product, an optical semiconductor device, and a polyoxyalkylene. [Prior Art] A polyoxane composition (hereinafter also referred to as a ydrosilyl polyoxane composition) used in a sealant for a semiconductor light-emitting device (LED) or the like is used. A technique for improving the adhesion to a package or the like. As a technique for improving the adhesion of a composition of a hydroxane-based polyoxane, a technique of adding an adhesion promoter such as an epoxy group-containing polyoxyalkylene to a hydroquinone-based polyoxane composition is known. Patent Document 1 describes a hydroquinane-based polyoxoxane composition containing 0.01 to 50 parts by weight of an alkenyl group as an adhesion promoter with respect to 1 part by weight of the organopolysiloxane as a main component. The epoxy-containing profit-seeking document 2 describes that it is contained in an organic two-part by weight of an alkenyl group and a phenyl group as a main component. .01~2. The weight fraction is promoted as adhesion: 3 per sulphate of the sulphate. Patent Document 3 describes a composition of a (4) polyoxygen-oxygen-fired composition, which contains 0.01 to 10 parts by mass of the organic polyfluorene-containing mass fraction containing an alkenyl group as a main component. The epoxy group-containing concentration. In the case of the one of the above-mentioned accelerators, the Japanese Patent Publication No. 200747785 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-3008 No. JP-A-2002-229402 DISCLOSURE OF THE INVENTION [Problem to be Solved by the Invention] In order to improve the adhesion between a substrate, a metal wiring and a sealant, it is necessary to add an epoxy group-containing polyoxane as an adhesion promoter. The epoxy group content. However, in the case where a large amount of such an adhesion promoter is used, there is a fear that the brightness is lowered. An object of the present invention is to provide a curable composition which is a composition of a hydrogen hydride-based polyoxan 6 composition and which can form a cured product which can achieve adhesion and brightness to a substrate or a metal wiring. [Means for Solving the Problem] The invention is a curable composition which is a poly(A) containing polyalkenyl group and an intimate group, and having at least two hydrogen atoms bonded to the atom: The curable composition of the oxime (B) (except for polyoxane (VIII)) and the catalyst for hydrogenation of hydrazine (C) is obtained by combining the contents of all the components contained in the curable composition; The content ratio of the polysulfate (A) is 40 to 90% by mass. Part 31=Sclerosing composition, when the content of the di-holoyl group contained in the Juxixi Hospital (8) is 3 〇 〇 莫 〇〇 〇〇 〇〇 ' ' ' ' ' ' ' ' ' ' ' ' ' ' Moer%. The content of the adhesion group is preferably 4. 〇1 to 1 〇 In the above curable composition, the above-mentioned adhesion group is preferably a group having an epoxy group of 201247785. In the curable composition, the polyoxyalkylene (a) is preferably represented by the following chemical formula:

^R^Vi〇l2V〇(R^a nl3Si〇1/2) b (RViRlsi〇^ c (RK o 1/2* S i〇2/2) d (R 2sl〇2/2) e (RlSi〇3/2) f (Si〇4/2) h (x (式中R表不具有稀基的基團。REp表示具有環氧基的 基團。R1各自獨立地表示“賈的烴基(但具有烯基的基團 除外)。X表示氫原子或者碳原子數…的烧基。a表示〇 以上的整數、b表示0以上的整數、。表示0以上的整數、d 表不1以^的整數、e表示0以上的整數、f表示㈣上㈣ 數、h表不0以上的啓動。ΐ志々n·、,, 以上的整數”上的整數。且心為工 且以更化性組成物中,氧烧⑷具有芳基,並 ;Γ二燒⑷中所含的全部S1原子的數目為1。。莫耳 =:聚石夕氣烧⑷中所含的芳基的含量較佳為_ = 其他的發明為一種硬化物,其特徵為 化性組成物獲得。 則逃的硬 具有=體==。種光半導體裝置,其特徵為 硬化物。件和覆蓋該半導體發光元件之前述的 式表^卜’其他的發明為-種聚石夕氧炫,係以下述化學 U i /2 e (R Sl〇3々)f (Si〇4/2) h (χ 201247785 (式中,Rvi表示具有烯基的基團。REp表示具有環氧基的 基團。R1各自獨立地表示1價的烴基(但具有烯基的基團 除外)。X表示氫原子或者碳原子數1至3的烷基。a表示〇 以上的整數、b表示0以上的整數、c表示0以上的整數、d 表示1以上的整數、e表示〇以上的整數、f表示〇以上的^ 數、h表示0以上的整數。i表示0以上的整數。且& + (:為1 以上的整數)。 [發明之效果] 本發明的硬化性組成物為氫矽烷系聚矽氧烷組成物 ,其可形成能兼顧對基板或金屬配線等的黏著性和亮度 的硬化物。 因此,以由該硬化性組成物獲得的硬化物覆蓋半導 體發光元件而獲得之光半導體裝置,係為可靠性優異之 光半導體裝置。 【實施方式】 [實施發明之形態] <硬化性組成物> 本發明的硬化性組成物,其為含有具有烯基及密接 性基團的聚矽氧烷(A)、每i分子中至少具有兩個與矽原 子結合的氫原子的聚矽氧烷(B)(但聚矽氧烷(A)除外)、及 矽氫化反應用催化劑(C)的硬化性組成物,其特徵為以該 硬化性組成物中所含的全部成分的含量合計為i 〇〇質量 /〇日守,聚矽氧烷(A)的含有比例為4〇〜9〇質量%。 另外’在本發明中「聚矽氧烷」是指具有結合有2 個以上的⑦氧院單兀(Si(D)之分子骨架的石夕氧院。 201247785 [聚矽氧烷(A)] 聚矽氧烷(A)為具有烯基及密接性基團的聚矽氧烷 。聚矽氧烷(A)為本組成物的主要成分,藉由與聚矽氧烷 (B)的矽氫化反應而硬化’成為硬化物的主體。另外,聚 石夕氧烧⑷由於具有密接性基團,因此亦具有提高硬化物 與L E D封裝專之黏著性的功能。 作為水夕氧烧(A)所具有的稀基,例如可列舉乙稀基 、烯丙基、丙烯基、異丙烯基、丁烯基、異丁烯基、戊 稀基、庚烯基、己料以及環己烯基等。 乙烯基、烯丙基以及己浠基。 4 水矽虱烷(A)中烯基的含量,以聚矽氧烷中所含 的全部si原子的數目為刚莫耳%時,較佳為3〜5〇莫耳。a 更佳為5〜4〇莫耳% ’進一步更佳為1〇〜3〇莫耳%。烤基 的含量為前述範圍内時,聚石夕氧烷㈧與聚石夕氧烷⑻的 石夕氫2反應在適宜範圍引發’可獲得強度高的硬化物。 别述密接性基團,係指對成為半導體裝置等的基 等材料之金屬或有機樹脂等,具有密接性的基團。 作為聚石夕氧院⑷所具有的密接性基團,例如可列舉 具有環氧基、亞硫醯基、異氰酸醋基、三烯丙基異氛: 酯基等的基團。 n 等中由於難以阻礙在硬化性組成物硬化時引起 的梦虱化反應,拍日你士、 艾且^/成sb咼度兼顧對基板、金屬 等的黏著性和亮度的硬化物,較佳為具有環氧基的基團 〇 作為則述具有環氧基的基團,例如可列舉:環氧丙 201247785 氧基,3-環氧丙氧基丙基等環氧丙氧基烷基,以及3,4_ 環氧環戊基、3,4·環氧環己基、2_(3,4_環氧環戊基)乙基 、以及2-(3,4-環氧環己基)乙基等環氧環烷基等。作為前 述具有環氧基的基團,具體可列舉以下述結構式(丨)〜(4) 表示的基團》前述具有環氧基的基團為這樣的基團時, 便可實現以毫米等級成型硬化物。^R^Vi〇l2V〇(R^a nl3Si〇1/2) b (RViRlsi〇^ c (RK o 1/2* S i〇2/2) d (R 2sl〇2/2) e (RlSi〇 3/2) f (Si〇4/2) h (x (wherein R represents a group having a weak group. REp represents a group having an epoxy group. R1 each independently represents a hydrocarbon group of Jia (but has X is a group of an alkenyl group. X represents a hydrogen atom or a group of carbon atoms. a represents an integer above 〇, b represents an integer of 0 or more, and represents an integer of 0 or more, and d represents an integer of 1 or ^. , e represents an integer of 0 or more, f represents (4) the upper (four) number, and the h table is not started with 0 or more. ΐ志々n·,,, the integer above the integer”, and the heart is working and the composition is changed. In the middle, the oxy-fired (4) has an aryl group, and the number of all the S1 atoms contained in the bismuth (4) is 1. The molar content of the aryl group contained in the polysulfide (4) is preferably _ = The other invention is a hardened material characterized by a chemical composition obtained. The hardened semiconductor has a body ==. The seeded semiconductor device is characterized by a cured product, and the aforementioned formula covering the semiconductor light-emitting element. Table ^ Bu 'other inventions are - a kind of Ju Shi Xi Xing The following chemical U i /2 e (R Sl〇3々)f (Si〇4/2) h (χ 201247785 (wherein Rvi represents a group having an alkenyl group. REp represents a group having an epoxy group) R1 each independently represents a monovalent hydrocarbon group (except for a group having an alkenyl group). X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms. a represents an integer of 〇 or more, and b represents an integer of 0 or more. c represents an integer of 0 or more, d represents an integer of 1 or more, e represents an integer of 〇 or more, f represents an integer of 〇 or more, and h represents an integer of 0 or more. i represents an integer of 0 or more. And & + (: [Effect of the invention] The curable composition of the present invention is a hydroquinane-based polyoxane composition, which can form a cured product which can achieve adhesion to a substrate or a metal wiring or the like. Therefore, the optical semiconductor device obtained by covering the semiconductor light-emitting device with the cured product obtained from the curable composition is an optical semiconductor device having excellent reliability. [Embodiment] [Form of the invention] <Surability composition > The curable composition of the present invention which contains an olefin And a polyoxyalkylene (A) having an adhesion group, a polyoxyalkylene (B) having at least two hydrogen atoms bonded to a halogen atom per molecule (except for polyoxyalkylene (A)), and The curable composition of the catalyst for hydrogenation reaction (C), characterized in that the total content of all the components contained in the curable composition is i 〇〇 mass / 〇 守 ,, poly siloxane (A) The content ratio is 4 〇 to 9 〇 mass%. In the present invention, "polyoxane" means a shixi oxygen institute having a molecular skeleton in which two or more oxysomies (Si(D) are combined. . 201247785 [Polyoxane (A)] Polyoxyalkylene (A) is a polyoxyalkylene having an alkenyl group and an adhesion group. The polyoxyalkylene (A) is a main component of the composition, and is hardened by the hydrogenation reaction with polyhydrazine (B) to become a main body of the cured product. In addition, since the polyoxet (4) has an adhesive group, it also has a function of improving the adhesion of the cured product to the L E D package. Examples of the dilute group which the oxygen-containing oxygen (A) has include an ethylene group, an allyl group, a propenyl group, an isopropenyl group, a butenyl group, an isobutenyl group, a pentyl group, a heptenyl group, and a diene group. Cyclohexenyl and the like. Vinyl, allyl and hexyl. The content of the alkenyl group in the hydrous alkane (A) is preferably 3 to 5 moles per mole of the total number of si atoms contained in the polyoxyalkylene. a more preferably 5 to 4 〇 mole % ‘more preferably 1 〇 3 〇 耳 %. When the content of the baked base is within the above range, the polyoxetane (VIII) reacts with the Shixia hydrogen 2 of the polyoxin (8) to induce a hardened product having a high strength. The term "adhesive group" as used herein refers to a metal or an organic resin which is a material such as a semiconductor device or the like and has an adhesive group. Examples of the adhesion group which the polysulfide compound (4) has include a group having an epoxy group, a sulfinyl group, an isocyanate group, a triallyl group or an ester group. n, etc., it is difficult to prevent the nightmization reaction caused by the hardening of the curable composition, and it is preferable to take care of the adhesion and brightness of the substrate, metal, etc. The group having an epoxy group is a group having an epoxy group, and examples thereof include a glycidyl group such as propylene oxide 201247785 oxy group and 3-glycidoxypropyl group, and 3,4_epoxycyclopentyl, 3,4·epoxycyclohexyl, 2-(3,4-epoxycyclopentyl)ethyl, and 2-(3,4-epoxycyclohexyl)ethyl Oxycycloalkyl and the like. Specific examples of the group having an epoxy group include a group represented by the following structural formulae (丨) to (4). When the group having an epoxy group is such a group, a millimeter scale can be achieved. Forming hardened material.

[結構式(1)中R2表示亞甲基或者2價的碳原子數2〜1〇的直 鏈狀伸烧基或者碳原子數3 ~ 1 0的支鏈狀伸烧基。] ~R3—CH—CH2[In the structural formula (1), R2 represents a methylene group or a divalent carbon group having 2 to 1 ring carbon atoms or a branched chain extending group having 3 to 10 carbon atoms. ] ~R3—CH—CH2

[結構式(2)中R3表示亞甲基或者2價的碳原子數2〜1〇的直 鏈狀伸烷基或者碳原子數3〜1〇的支鏈狀伸烷基。] R4 ——Ο-CH2—· CH — CH, V (3)[In the formula (2), R3 represents a methylene group or a divalent linear alkyl group having 2 to 1 ring carbon atoms or a branched alkyl group having 3 to 1 ring carbon atoms. ] R4 ——Ο-CH2—· CH — CH, V (3)

[結構式(3)中R4表示亞甲基或者2價的碳原子數2〜1〇的直 鏈狀伸烷基或者碳原子數3〜1〇的支鏈狀伸烷基。] [結構式(4)中R5表示亞甲基或者2價的碳原子數2〜1〇的直 鏈狀伸烧基或者碳原子數3〜1〇的支鏈狀伸烷基。] 作為以結構式(1)表示的基團,具體可列舉2-(3,4-環 氧環己基)乙基等。 .201247785 作為以結構式(2 )表示6气冑间 基等 J衣不的基團,具體可列舉縮水甘油 作為以結構式⑴表示的基團,具體可列舉3_環氧丙 氧基丙基等。 作為以結構式(4)表示的基團,具體可列舉2朴甲基 -3,4-環氧環己基)乙基等。 聚石夕氧烧⑷中的密接性基團的含量,以聚石夕氧燒 广)中所含之全部Si原子的數目為1〇〇莫耳%時較佳為 ,Η)莫耳%,更佳為〇 〇5〜5莫耳。心進一步更佳為〇 〜 莫耳%。密接性基團的含量為前述範圍内時,可獲得由 本組成物所獲得之硬化物與咖封裝等之間高黏著性以 及凴度高的硬化膜。 本發明的硬化性《且占札rb «入 旦 ;更化『生、,且成物中所含的聚矽氧烷(A)的含 二以本组成物中所含的全部成分的含量的合計為100 質量%時為40〜90質量%,較佳為5〇〜85質量%, 65〜85質量。/〇。 在以往的氫耗系聚矽氧貌組成物中,為了提高黏 :二除了作為主劑的聚砂氧炫,另外添加相對於組成 物全體0.01〜2〇曾晋〇/〇/· 1 工右的作為黏著促進劑之含環氧基 牌二烷。相對於此,在本發明的硬化性組成物中, =氧基的聚嫩之聚石夕氧_乍為主劑,其含量 :=那樣為斗9〇ft%m院⑷的含量為前述 二丄由本組成物所獲得的硬化物,具有對基板或金 ^兄^的高黏著性,·"在作為㈣等密封材料使用的 障況下維持LED等之高的初期亮度。 •10- 201247785 且有另-1卜主聚矽氧烷(A)較佳為具有芳基。聚矽氧烷(A) 二一方土日’ ’則表現出在作為LED密封材料使用時可獲 1 …度之特性。以聚石夕氧燒⑷中所含的全部Si原子的 、時聚矽氧烷(A)中所含的芳基的含量較 ’·’· ^20莫耳〇/〇,更佳為50〜110莫耳% ,進一步更佳為 :::莫耳%。芳基的含量在3。〜12。莫耳%的範圍内時, …一 Γ付冗度南、並且折射率高的硬化膜。作 述方基’可列舉苯基、甲苯基、二甲苯基、蔡基等 〇 豸 稀換⑷之藉由凝膠渗透層析法測定的聚苯乙 、,重篁平均分子量較佳在100〜50000的範圍,更佳 在500〜5000的範圍。若聚 气、+、Ρ _ 士 $夕氧烷(A)的重置平均分子量在 別述範圍内’則在使用本組成物製造密 理,另外由本組成物獲得的硬化物具有作為光半;^ 封材料之充分的材料強度及特性。 在 作為聚矽氧烷(A),可列舉以下述 聚矽氧烷: 干式(1)表不的 [化學式(1)] (R R^SiOj/a) 4 (R^SiO ) fRv 1 R1 ς: · d (Rl2Si〇2/) (rxV/o ^ S/〇2/2) ° (RA B (si〇4/2) h (x〇1/2) ( 2丄(R Sl〇3/2) 一si〇3/2) (式中,Rv·表示具有烯基的基 Ad 團的基團。…獨立地表…價的二基 基團除外)。X表示氫原子或者碳原子數ι至土的 表示〇以上的整數、b表示〇以上的整數、c表厂疋土。a 數、ά表示〇以上的整數 * _ 不ι上的整 整數e表不G以上的整數、f表示〇以 -11- 201247785 上的整數、g表示〇以上的整數、h表示〇以上的整數。i表 示〇以上的整數。且& + 〇為i以上的整數。i以上的整 數)。 相對於a、b、c、d、e、f、g、h以及丨的合計,a的比 例,使前述合計為100%時,較佳為〇%以上6〇%以下更 佳為5。/。以上40%以下。b的比例較佳為〇%以上5〇%以下, 更佳為0%以上20%以下。c的比例較佳為〇%以上3〇%以下 ,更佳為0%以上20%以下。d的比例較佳為〇%以上1〇%以 下,更佳為0%以上5%以下。e的比例較佳為〇%以上5〇% 以下,更佳為0%以上30%以下。f的比例較佳為2〇%以上 9〇%以下,更佳為40%以上80%以下。g的比例較佳為〇% 以上10%以下,更佳為〇%以上5%以下。h的比例較佳為 〇%以上50%以下,更佳為〇%以上3()%以下。i的比例較佳 為〇%以上1 〇%以下,更佳為〇%以上5%以下。且的比 例大於0 % ’ d +g的比例大於〇 〇/〇。 以化學式(1)所示的聚石夕氧烧之中,以下述化學式(2) 所不的聚矽氧烷係形成能高度兼顧對基板、金屬配線等 的黏著性和亮度的硬化物,而較佳。 [化學式(2)][In the formula (3), R4 represents a methylene group or a divalent linear alkyl group having 2 to 1 ring carbon atoms or a branched alkyl group having 3 to 1 ring carbon atoms. [In the structural formula (4), R5 represents a methylene group or a divalent carbon group having 2 to 1 ring carbon atoms or a branched alkyl group having 3 to 1 ring carbon atoms. Specific examples of the group represented by the structural formula (1) include 2-(3,4-epoxycyclohexyl)ethyl and the like. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Wait. Specific examples of the group represented by the structural formula (4) include 2 phenylmethyl-3,4-epoxycyclohexyl)ethyl and the like. It is preferable that the content of the adhesion group in the polysulfide (4) is 1% by mole based on the number of all the Si atoms contained in the polysulfide oxide, and is preferably Η) mol%. More preferably 〇〇 5~5 mo. The heart is further better for 〇 ~ Moer%. When the content of the adhesion group is within the above range, a cured film having high adhesion between the cured product obtained from the composition and the coffee package and the like, and a high degree of twist can be obtained. The sclerosing property of the present invention, and the content of all the components contained in the composition of the polyoxyalkylene (A) contained in the raw material. When the total amount is 100% by mass, it is 40 to 90% by mass, preferably 5 to 85% by mass, and 65 to 85 by mass. /〇. In the conventional hydrogen consumption polyoxomorphous composition, in order to improve the viscosity: in addition to the polyoxalate as the main agent, the addition is relative to the composition of the whole 0.01~2〇Zeng Jinyu/〇/· 1 The epoxy group-containing dioxane as an adhesion promoter. On the other hand, in the curable composition of the present invention, the polyoxyl group of the oxy group is the main agent, and the content thereof is: = that is the content of the bucket 9 ft% m (4) is the aforementioned two The cured product obtained from the composition has high adhesion to the substrate or the metal, and maintains the high initial brightness of the LED or the like under the barrier of use as a sealing material such as (4). • 10-201247785 and another -1 main polyoxane (A) preferably has an aryl group. The polyoxyalkylene (A) two-day soil ' ’ exhibits a characteristic of 1 degree when used as an LED sealing material. The content of the aryl group contained in the polyoxyalkylene (A) of all the Si atoms contained in the polysulfide (4) is more than '·'·^20 moles/〇, more preferably 50~ 110% by mole, further better:::% by mole. The content of the aryl group is 3. ~12. In the range of % of moles, ... a cured film having a high degree of redundancy and a high refractive index. The description of the base group can be exemplified by a phenyl group, a tolyl group, a xylyl group, a decyl group or the like (4), which is determined by gel permeation chromatography. The average molecular weight of the heavy ruthenium is preferably 100~. The range of 50000 is better in the range of 500~5000. If the cumulative average molecular weight of the gas, +, Ρ 士 士 士 士 士 士 士 士 士 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ^ The material strength and characteristics of the sealing material. Examples of the polyoxyalkylene (A) include the following polyoxane: [Chemical Formula (1)] (RR^SiOj/a) 4 (R^SiO) fRv 1 R1 表: · d (Rl2Si〇2/) (rxV/o ^ S/〇2/2) ° (RA B (si〇4/2) h (x〇1/2) ( 2丄(R Sl〇3/2 a Si 〇 3 / 2) (wherein Rv · represents a group having a base group of an alkenyl group. (except for a divalent group independently represented by a valence). X represents a hydrogen atom or a carbon atom of ι to earth. The integer above 〇, the integer above 〇, and the c table. The number of a, ά represents the integer above * * _ The integer integer on ι is not an integer greater than G, and f is 〇 11-201247785 An integer, g represents an integer greater than 〇, h represents an integer greater than 。, i represents an integer greater than 。, and & + 〇 is an integer greater than i. An integer greater than i). With respect to the total of a, b, c, d, e, f, g, h, and yttrium, the ratio of a is preferably 〇% or more and 〇% or less, more preferably 5, when the total amount is 100%. /. Above 40%. The ratio of b is preferably 〇% or more and 5% or less, more preferably 0% or more and 20% or less. The ratio of c is preferably 〇% or more and 3% or less, more preferably 0% or more and 20% or less. The ratio of d is preferably 〇% or more and 1% or less, more preferably 0% or more and 5% or less. The ratio of e is preferably 〇% or more and 5% or less, more preferably 0% or more and 30% or less. The ratio of f is preferably 2% or more and 9% or less, more preferably 40% or more and 80% or less. The ratio of g is preferably 〇% or more and 10% or less, more preferably 〇% or more and 5% or less. The ratio of h is preferably 〇% or more and 50% or less, more preferably 〇% or more and 3 ()% or less. The ratio of i is preferably 〇% or more and 1% or less, more preferably 〇% or more and 5% or less. The ratio of greater than 0% ’ d +g is greater than 〇 〇/〇. In the polyoxanthene gas which is represented by the chemical formula (1), a cured material which can adhere to a high degree of adhesion to a substrate, a metal wiring or the like, and a cured product having a high degree of compatibility with a polysiloxane obtained by the following chemical formula (2) is formed. Preferably. [Chemical Formula (2)]

ρΒ^Ίΐ2ν〇Λ2) a (R、S i〇1/2) b (RViRlS i〇2/2) “RKρΒ^Ίΐ2ν〇Λ2) a (R, S i〇1/2) b (RViRlS i〇2/2) “RK

l〇2/2) d (R 2S 1〇2/2) e (R^s i〇3/2) f (S i04/2) h (X i (式中,RVi表示具有烯基的基團。rEp表示具有環氧基的 基團。R1各自獨立地表示“賈的烴基(但具有烯基的基團 除外)。X表示氫原子或者碳原子數1至3的烷基。a表示〇 乂上的整數、b表示0以上的整數、c表示〇以上的整數、d -12- 201247785 表示1以上的整齡、。生_ * _ 數 表不0以上的整數、f表示0以卜沾敕 數、h表示〇以上的敕 上的 上的正數。丄表示0以上的整數。 以上的整數) 及a+c為1 作為具有烯基的基團,例示與上述之 團相同的基團。作+ + ^ 埽基的基 作為具有密接性基團的基團, 與上述之密接,]·生其' '八有 生基團相同之基團的基團。作為夏有璟胃 基的基團,例示盥μ、+. 勺有k氧 达之具有環氧基的基團相同的某_ 。作為1價的烴基,例干审Α “ ^丨J的基團 基 基、丙基、丁基、戊基 "庚基4烷基;苯基、甲苯基、二曱苯基、萃美 等芳基;苄基、贫 奈基 土專芳烷基;氣甲基、3-氣丙基、 ,,-二氟丙基、九氟丁基乙基等取代烷基。 作為聚矽氧烷⑷的製造方法,可列舉 號公報、曰本特開2,_则⑽ 008996戒公報、日本特開2〇〇71〇6798號公報、日 本特開2GG7.169427號公報以及日本特開2㈣㈣ :報…載之周知的方法,例如,將成為各單元來源虎 =石夕说、烧乳基錢共水解的方法,通過驗金屬催化 劑4將共水解物平衡化反應的方法等。 藉由使用這樣的聚⑦氧烧,由本案之硬化性組成物 名又得的硬化物可獲得必雷L〇2/2) d (R 2S 1〇2/2) e (R^si〇3/2) f (S i04/2) h (X i (wherein RVi represents a group having an alkenyl group). rEp represents a group having an epoxy group. R1 each independently represents "hydrocarbyl group of Jal (except for a group having an alkenyl group). X represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms. An integer, b represents an integer of 0 or more, c represents an integer greater than 〇, and d -12- 201247785 represents an integer of 1 or more. The raw _ * _ number table is not an integer greater than 0, and f represents 0. h represents a positive number on the 敕 above 〇. 丄 represents an integer of 0 or more. The above integers and a+c are 1 as a group having an alkenyl group, and the same group as the above group is exemplified. + ^ The group of the fluorenyl group is a group having an adhesion group, and is in close contact with the above, and a group having the same group as the octagenous group. For example, 盥μ, +. scoop has a group of the same group having an epoxy group as k-oxygen. As a monovalent hydrocarbon group, the "base group of propyl group, propyl group, butyl group, Pentyl "heptyl 4 alkyl; phenyl , tolyl, diphenyl, quinone and other aryl groups; benzyl, lean natrile aralkyl; gas methyl, 3-vapor propyl, ,, -difluoropropyl, nonafluorobutyl The alkyl group is substituted with an alkyl group. Examples of the method for producing the polyoxyalkylene (4) include exemplified by the Japanese Patent Publication No. 2, pp. (10) 008996, the Japanese Patent Publication No. 2〇〇71〇6798, and the Japanese Special Open 2GG7. No. 169427 and Japanese Patent Laid-Open No. 2(4)(4): A method known as a report, for example, a method of co-hydrolysis of each unit source, Tiger = Shi Xi, and calcined milk, and the co-hydrolyzate is balanced by the metal catalyst 4. Method for the reaction, etc. By using such poly 7 Oxygen, the hardened material obtained from the curable composition name of the present invention can be obtained.

Rt ^ 又付而的強度,表現與金屬或有機樹 曰膜的在、接性,而且也表規太& τ ρ π _ . 衣現在作為LED密封材料使用時 可獲得高亮度之特性。Rt ^ also pays for strength, and exhibits the in-and-contact properties of the metal or organic tree tantalum film, and also the gauge too & τ ρ π _ . The clothing is now used as an LED sealing material to obtain high brightness characteristics.

[聚矽氧烷(B)J 八聚石夕氧院⑻係為每!分子至少具有兩個與石夕原子結 口之氫原子的聚矽氳烷丨作炉 W(彳一汆矽氧烷(A)除外)。即聚矽氧 -13- .201247785 烷(B)其每1刀子至少具有兩個的SiH基(氫矽烷基)。聚矽 氧烷(B)為對於聚矽氧烷(A)之交聯劑藉由與聚矽氧烷 (A)的矽氫化反應而形成硬化物。 作為聚矽氧烷(B) ’若是在以往的氫矽烷系聚矽氧烷 組成物作為交聯劑使用之的、每丨分子至少具有兩個與矽 原子結合之氫原子的W氧烧’則可不受特別限制地使 用0 作馬聚矽氧烷(B)的具 所5己載的有機氫化聚石夕氧烧等 聚矽氧烷(B)例如可藉由周知的方法使苯基三甲氧 基矽烷、二苯基二曱氧基矽烷等烷氧基矽烷與m3·四 甲基一矽氧烷等氫化矽氧烷反應而獲得。 作為本發明的硬化性組成物中聚矽氧烷(b)的含量 2對於^氧烧㈧中的稀基量,㈣氧院(b)中的與 :原子結合之氫原子量的莫耳比較佳為〇1〜5的量,更佳 ⑻的」Γ 步更佳為〇.7〜“的量。如果聚石夕氧烧 另外所 ?前述範圍内’那麼組成物的硬化充分進行, 广斤獲件的硬化物可獲得充分的耐熱性。 [矽氫化反應用催化劑(C)] 矽虱化反應用催化劑(c),係為聚 氧烧⑻之條反應的催化劑。夕氣说⑷與聚梦 作為石夕氫化反應用 系聚石夕A衫 ' 劑()右疋在以往的氫矽烷 , 元組成物作為矽氫化反應用催化#丨# Μ # # 劑,則可不受特別限制地使用。 “丨使用的催化 作為石夕氫化反應用催化劑(c)的具體例子,可列舉翻 -14- 201247785 系催化劑、铑系催化劑、鈀系俏 ^ ^ '、崔化劑。從促進本組成物 的硬化的觀點來看,此等中較佔 / Λ 敉佳為鉑系催化劑。作為鉑 糸催化劑,例如可列舉鉑-烯基 氧虎錯合物等。作為稀 基矽氧烷,例如可列舉1 3-二乙烯其1 u歸基-1,1,3,3-四甲基二矽 氧烷、1,3,5,7-四甲基 _1,3,5 7_ 乙席基%四石夕氧烧等。 特別是從錯合物的安定性的觀點來看較佳為1,%二乙 烯基-1,1,3,3 -四曱基二石夕氧烧。 本發明之硬化性組成物中的备 取初T的矽虱化反應用催化劑 (C) ’使用使聚矽氧烷(A)與聚矽氯 h、來/氧说(B)之矽氫化反應現 實地進行的量。 本發明的硬化性组成考勿,限於達成本發明之目的, 除了前述成分以外’因應需要可含有例如,氣相二氧化 矽、石英粉末等的微粒狀矽石;氧化鈦、氧化鋅等的無 機填充劑;環-四曱基四乙烯基四矽氧烷等的延遲劑;二 笨基雙(二甲基乙烯基矽烷氧基)矽烷、笨基三(二甲基乙 烯基矽烷氧基)矽烷等稀釋劑;顏料;阻燃劑;耐熱;; 抗氧化劑等。 本發明的硬化性組成物,可藉由混合機等周知的方 法將前述各成分均勻混合而製備。 本發明的硬化性組成物之25 〇c下的黏度,較佳為 lOOOOOOmPa s ’更佳為1〇〜1〇〇〇〇mpa s。黏度在此範圍 内時,本組成物的操作性提高。 本發明的硬化性組成物,可製備為單劑,也可分製 f雙劑、而在使用時混合雙劑使用。也可因應需要而少 量添加乙炔醇等硬化抑制劑。 -15- 201247785 <硬化物> 藉由使本發明的硬化性組成物硬化可獲得硬化物。 藉由本發明的硬化性組成物將半導體元件密封,使其硬 化’則可獲得密封材料之硬化物。 作為使本發明的硬化性組成物硬化的方法,例如可 列舉:將硬化性組成物塗布於基板上後,以1〇〇〜18〇t加 熱1〜13小時的方法等。 如刖述’將本發明之硬化性組成物硬化而獲得的硬 化物對基板或金屬配線等的黏著性高,並且實現led 等之高初期亮度。 <光半導體裝置> 本發明的光半導體裝置,具有半導體發光元件和覆 蓋半導體發光元件的前述硬化物。本發明的光半導體 裝置,通過將前述硬化性組成物覆蓋於半導體發光元件 ,使忒組成物硬化而獲得。使硬化性組成物硬化的方法 如上述。 作為光半導體裝置’可列舉LED(Liglu Emiuing[Polyoxane (B) J Baju Shixi Oxygen Institute (8) is for every! The molecule has at least two polydecane oximes which are hydrogen atoms at the junction of the Shixi atom, except for the oxime (A). That is, polyoxyl -13 - .201247785 alkane (B) has at least two SiH groups (hydroalkylene groups) per one knives. The polyoxyalkylene (B) is a crosslinker for the polyoxyalkylene (A) which is formed by a hydrogenation reaction with a polyoxane (A). As the polyoxyalkylene (B)', if the conventional hydrooxane-based polyoxane composition is used as a crosslinking agent, the oxy-anthracene having at least two hydrogen atoms bonded to the ruthenium atom per ruthenium molecule is used. The polyoxyalkylene (B) such as an organic hydrogenated polyoxo-oxygenate having a concentration of 5 or less may be used without particular limitation, for example, a phenyltrimethoxy group can be obtained by a known method. It is obtained by reacting an alkoxydecane such as a decane or a diphenyldimethoxy decane with a hydrogenated siloxane such as m3·tetramethylmonooxane. The content of the polyoxyalkylene (b) in the curable composition of the present invention is preferably 2 for the amount of the weak base in the oxygen-burning (eight), and (4) the molar amount of the atomic hydrogen atom in the oxygen (b). For the amount of 〇1~5, the better (8) of the Γ step is better than 〇.7~" the amount. If the geisha oxygen is burned in the other area? The hardening of the composition is fully carried out, The cured product of the member can obtain sufficient heat resistance. [矽 Catalyst for Hydrogenation Reaction (C)] The catalyst for the deuteration reaction (c) is a catalyst for the reaction of the polyoxygen (8). The atmosphere is said to be (4) and the dream As a catalyst for the hydrogenation reaction of the Shixi hydrogenation, the compound is used in the conventional hydroquinane, and the composition is used as a catalyst for the hydrogenation reaction, and can be used without particular limitation. Catalyst used for the ruthenium As a specific example of the catalyst (c) for the hydrogenation reaction, the catalyst of the ruthenium-14-201247785, the ruthenium-based catalyst, the palladium-based catalyst, and the Cuihua agent can be mentioned. From the viewpoint of promoting the hardening of the present composition, it is preferred that these are platinum-based catalysts. Examples of the platinum rhodium catalyst include a platinum-alkenyl oxygen tiger complex and the like. Examples of the dilute helioxane include 1,3-diethylene, 1 u-group-1,1,3,3-tetramethyldioxane, and 1,3,5,7-tetramethyl_1. , 3,5 7_ Ethyl group% four stone oxime and so on. In particular, from the viewpoint of the stability of the complex, it is preferably 1,1% divinyl-1,1,3,3-tetradecyl oxazepine. In the curable composition of the present invention, the catalyst for the deuteration reaction of the initial T (C) is used to hydrogenate the polyfluorene oxide (A) with polyfluorene chloride (H) and oxygen (B). The amount actually carried out. The curable composition of the present invention is not limited to the object of the present invention, and may contain, in addition to the above-mentioned components, particulate fine particles such as gas phase ceria or quartz powder, and inorganic materials such as titanium oxide and zinc oxide. a retarder; a retarder such as cyclo-tetradecyltetravinyltetraoxane; diphenyl bis(dimethylvinyl nonyloxy) decane, phenyl tris(dimethylvinyl decyloxy) decane Such as diluent; pigment; flame retardant; heat;; antioxidants. The curable composition of the present invention can be prepared by uniformly mixing the above components by a known method such as a mixer. The viscosity at 25 〇c of the curable composition of the present invention is preferably from 100 to 100 mPa s ' more preferably from 1 〇 to 1 〇〇〇〇 mpa s. When the viscosity is within this range, the operability of the composition is improved. The curable composition of the present invention can be prepared as a single agent or as a double agent, and can be used in combination with two agents. A hardening inhibitor such as acetylene alcohol may also be added in small amounts as needed. -15-201247785 <cured material> A cured product can be obtained by hardening the curable composition of the present invention. The semiconductor element is sealed and hardened by the curable composition of the present invention, and a cured product of the sealing material can be obtained. The method of curing the curable composition of the present invention may, for example, be a method in which the curable composition is applied to a substrate and then heated at 1 to 18 Torr for 1 to 13 hours. As described above, the hardened material obtained by curing the curable composition of the present invention has high adhesion to a substrate or a metal wiring, and the like, and high initial brightness of led or the like is achieved. <Optical semiconductor device> The optical semiconductor device of the present invention has a semiconductor light-emitting device and the cured product covering the semiconductor light-emitting device. The optical semiconductor device of the present invention is obtained by coating the curable composition on a semiconductor light-emitting device and curing the tantalum composition. The method of hardening the curable composition is as described above. LED (Liglu Emiuing) can be cited as an optical semiconductor device

Diode,發光二極體)及LD(:Laser Diode,雷射二極體)等 〇 圖1為本發明的光半導體裝置的—個具體例子的模 式圖。光半導體裝置1具有電極6、設置於電極6上並藉由 導線7與電極6以電連接的半導體發光元件2、以收納半導 體發光元件2的方式而配置的反射器3、以及填充於反射 器3而將半導體發光元件2密封的密封材料4。密封材料4 係硬化本發明的硬化性組成物而獲得。密封材料4中分散 -16- 201247785 有石夕石、螢光體等的顆粒5。 如前述,將本發明的硬化性組成物硬化而獲得的密 封材料,由於對反射器之材料的有機樹脂膜或電極之材 料的金屬等之黏接力強,而即使在受到熱循環的情况, 密封材料也不會從LED封裝剝落。另外,前述密封材料 維持LED等之高的初期亮度。即,可實現兼顧高的黏著 性與高的初期亮度.Diode, light-emitting diode, LD (: Laser Diode), etc. Fig. 1 is a schematic view showing a specific example of the optical semiconductor device of the present invention. The optical semiconductor device 1 includes an electrode 6, a semiconductor light-emitting element 2 that is electrically connected to the electrode 6 and is electrically connected to the electrode 6 by a wire 7, and a reflector 3 that is disposed to house the semiconductor light-emitting device 2, and is filled in the reflector. 3 is a sealing material 4 that seals the semiconductor light emitting element 2. The sealing material 4 is obtained by hardening the curable composition of the present invention. Dispersion in the sealing material 4 -16- 201247785 There are particles 5 such as Shishi stone, phosphor or the like. As described above, the sealing material obtained by curing the curable composition of the present invention has a strong adhesion to the organic resin film of the material of the reflector or the metal of the electrode material, and is sealed even in the case of thermal cycling. The material will also not peel off from the LED package. Further, the sealing material maintains a high initial luminance of the LED or the like. That is, it can achieve both high adhesion and high initial brightness.

[實施例] (1)聚石夕氧烧的合成 (1-1)聚矽氧烷的合成 [合成例1 ] 聚矽氧烷(AR1)的合成 在附攪拌器、回流冷凝管、投入口、溫度計的四口 燒瓶中投入並混合1,3_二乙烯基-m3-四曱基二矽氧 烷82g、苯基三曱氧基矽烷525g、水143g、三氟曱磺酸〇4g 以及曱苯5 0 0 g,加熱回流1小時。冷卻後,分離去除下層 ,水洗上層的曱苯溶液層。在水洗後的甲苯溶液層中加 入氫氧化鉀0.4g,一邊從水分離管去除水一邊回流。水 的去除結束後’濃縮至固體成分濃度為7 5質量%,再回 流5小時。冷卻後,投入乙酸〇 6g中和後,水洗過濾而獲 得的曱苯溶液。其後,進行減壓濃縮而獲得聚矽氧烷 (AR1)。以凝膠參透層析法測定了(AR”的聚苯乙烯換算 重量平均分子量’為2〇〇〇。聚矽氧烷(AR1)的化學式為 (ViMe2SiO丨/2)25(phSi〇3/2)75 (Vi表示乙歸基、Me表示曱基 、Ph表示苯基。下標數字表示mop/〇)。 [合成例2]聚矽氧烷(A1)的合成 -17- .201247785 在附攪拌器、回流冷凝管、投入口、溫度計的四口 燒瓶中投入並混合1,3-二乙烯基_ι,ι,3,3-四甲基二矽氧 烧82g、水I43g、笨基三甲氧基矽烷521g、三氟曱磺酸〇.4g 以及曱本5 0 0 g ’加熱回流1小時。冷卻後,分離去除下層 ’水洗上層的曱苯溶液層。在水洗後的曱苯溶液層中加 入3-環氧丙氧基丙基曱基二曱氧基矽烷4g和氫氧化鉀 0.5g並加熱回流!小時。接著,將曱醇蒸餾去除,以共沸 脫水去除過量的水。接著加熱回流4小時。反應後的曱苯 /谷液在冷卻後,以乙酸〇. 6 g中和並水洗。去除水後,在 減壓下將甲笨蒸餾去除濃縮而獲得了具有烯基2 5莫耳〇/〇 以及環氧基〇. 5莫耳% (以聚石夕氧烧中所含的全部$丨原子 的數目為100莫耳%)的聚矽氧烷(A1)。以凝膠滲透層析法 測定了(A1)的聚苯乙烯換算重量平均分子量,為2〇〇〇 ^ 聚矽氧烷(A1)的化學式為(ViMe2Si〇i/2)25(phSi〇3/2)74 5 (EpMeSiOwV5 (Vi表示乙烯基、]^表示曱基、ph表示苯 基、Ep表示環氧丙氧基丙基。下標數字表示。以 聚矽氧烷(A1)中所含的全部以原子的數目為^⑽莫耳%時 ,烯基的含有比例為25m〇l%,環氧基的含有比例為 〇,5m〇1/°,芳基的含有比例為74.5mol%。 [合成例3]聚矽氧烷(A2)的合成 在附攪拌器、回户& # @ λ ^ μ机冷凝管、投入口、溫度計的四口 燒瓶中投入並混合1 3 ,3-—乙烯基-1,1,3,3-四曱基二矽氧 烧82g、苯基三曱氧其 乳基砂烷518g、水143g、三氟曱磺酸〇.4g 以及曱苯500g,加執门、士 …、回1小時。冷卻後’分離去除下層[Examples] (1) Synthesis of polyoxoxime (1-1) Synthesis of polyoxyalkylene [Synthesis Example 1] Synthesis of polyoxyalkylene (AR1) with a stirrer, reflux condenser, and inlet Into a four-necked flask of a thermometer, 82 g of 1,3-divinyl-m3-tetradecyldioxane, 525 g of phenyltrimethoxydecane, 143 g of water, 4 g of trifluorosulfonium sulfonate, and hydrazine were placed and mixed. Benzene 500 g, heated to reflux for 1 hour. After cooling, the lower layer was separated and washed, and the upper layer of the benzene solution was washed with water. To the toluene solution layer after washing with water, 0.4 g of potassium hydroxide was added, and the water was refluxed while removing water from the water separation tube. After the removal of water was completed, it was concentrated to a solid concentration of 75 mass%, and refluxed for another 5 hours. After cooling, the mixture was neutralized with 6 g of cerium acetate, and the benzene solution obtained by filtration was washed with water. Thereafter, concentration under reduced pressure was carried out to obtain polyoxyalkylene (AR1). The polystyrene-equivalent weight average molecular weight '(AR" was determined by gel permeation chromatography to be 2 〇〇〇. The chemical formula of polyoxyalkylene (AR1) was (ViMe2SiO丨/2) 25 (phSi〇3/2) 75 (Vi represents ethyl group, Me represents fluorenyl group, Ph represents phenyl group. The subscript number indicates mop/〇). [Synthesis Example 2] Synthesis of polyoxane (A1) -17-.201247785 , a reflux flask, an inlet, a thermometer, and a four-necked flask were charged and mixed with 1,3-divinyl_ι, ι, 3,3-tetramethyldioxane 82g, water I43g, stupid trimethoxy 521 g of decane, 〇.4 g of trifluorosulfonium sulfonate and 510 g of hydrazine were heated and refluxed for 1 hour. After cooling, the lower layer of 'the upper layer of the benzene solution was washed and washed. The layer of benzene solution after washing with water was added. 4 g of 3-glycidoxypropyl decyl decyloxydecane and 0.5 g of potassium hydroxide and heated to reflux for an hour. Then, the sterol was distilled off, and excess water was removed by azeotropic dehydration. After the reaction, the toluene/gluten solution is cooled, and neutralized with 〇. 6 g of acetic acid and washed with water. After removing the water, the benzene is distilled off under reduced pressure. The polyfluorene having an alkenyl group of 2 5 m 〇/〇 and an epoxy group 〇 5 mol % (the number of all the 丨 atoms contained in the polyoxoxime is 100 mol%) is obtained. Oxystane (A1). The polystyrene-equivalent weight average molecular weight of (A1) was determined by gel permeation chromatography, and the chemical formula of 2〇〇〇^ polyoxane (A1) was (ViMe2Si〇i/2). 25(phSi〇3/2)74 5 (EpMeSiOwV5 (Vi represents a vinyl group, ]^ represents a fluorenyl group, ph represents a phenyl group, and Ep represents a glycidoxypropyl group. The subscript number indicates a polyfluorene oxide ( When the number of atoms contained in A1) is ^(10) mol%, the content ratio of the alkenyl group is 25 m〇l%, and the content ratio of the epoxy group is 〇, 5 m〇1/°, and the content ratio of the aryl group 74.5 mol%. [Synthesis Example 3] Synthesis of polyoxane (A2) was carried out and mixed in a four-necked flask equipped with a stirrer, a home &# @ λ ^ μ machine condenser, an inlet, and a thermometer. 3,3-vinyl-1,1,3,3-tetradecyldioxane 82 g, phenyl trioxane 958 g of sulphonyl sulphate, 143 g of water, yttrium trifluorosulfonate. 4 g and hydrazine Benzene 500g, add the door, the gentleman..., back to 1 hour. Cold But then 'separate and remove the lower layer

’水洗上層的甲笨泣+ P 4液層。在水洗後的曱苯溶液層中加 -18- ‘201247785 入3-環氧丙氧基丙基甲基二曱氧基矽烷8g和氫氧化鉀 〇.5g並加熱回流1小時。接著’將甲醇蒸餾去除,以共彿 脫水去除過量的水。接著加熱回流4小時。反應後的甲苯 溶液在冷卻後,用乙酸0 _ 6 g中和並水洗。去除水後,在 減壓下將甲苯蒸餾去除濃縮而獲得了具有烯基25莫耳% 以及環氧基1莫耳% (以聚;5夕氧烧中所含的全部s丨原子的 數目為100莫耳%)的聚矽氧烷(A2)。以凝膠滲透層析法測 疋了(A2)的聚本乙稀換鼻重量平均分子量,為2〇〇〇。聚 石夕氧烧(A2)的化學式為(ViMe2Si〇i/2h5(phSi〇3/2h4 (EpMeSiOw), (Vi表示乙烯基、Me表示曱基、ph表示笨 基、Ep表示環氧丙氧基丙基。下標數字表示m〇丨。/。)。以 聚石夕氧烧(A2)中所含的全部Si原子的數目為1〇〇莫耳%時 ,烯基的含有比例為25mol%,環氧基的含有比例為lm〇1% ’芳基的含有比例為7 4 m ο 1 %。 [合成例4] 聚矽氧烷(A3)的合成 在附攪拌器、回流冷凝管、投入口、溫度計的四口 燒瓶中投入並混合1,3 -二乙稀基_ 1,1,3,3 -四甲基二石夕氧 烷82g、笨基二甲氧基矽烷5lig、水i43g、三氟曱磺酸〇4g 以及甲苯500g,加熱回流1小時。冷卻後,分離去除下層 ’水洗上層的甲苯溶液層。在水洗後的曱苯溶液層中加 入3-環氧丙氧基丙基甲基二曱氧基矽烷16g和3〇g和氫氧 化鉀0.5 g並加熱回流1小時。接著,將曱醇蒸餾去除,以 共’弗脫水去除過直的水。接著加熱卸流4小時。反腐後的 甲苯溶液在冷卻後’用乙酸〇.6g中和並水洗。去除水後 ,在減壓下將甲本蒸德去除;農縮,獲得具有烯基2 5莫耳 -19- 201247785 /〇以及裒氧基2莫耳% (以聚石夕氧烧中所含的全部s i原子 的數目為100莫耳%)的聚矽氧烷(A3)。以凝膠滲透層析法 測定了(A3)的聚笨乙烯換算重量平均分子量,為2〇〇〇。 聚矽氧烷(A3)的化學式為(ViMe2Si01/2)25(PhSi〇3/2)73 (EpMeSi02/2)2 (Vi表示乙烯基、Me表示甲基、ph表示苯 基、EP表示環氧丙氧基丙基。下標數字表示mol%)。以 聚矽氧烷(A3)中所含的全部Si原子的數目為1〇〇莫耳%時 ,烯基的含有比例為25mol〇/。,環氧基的含有比例為2m〇1% ’芳基的含有比例為73mol°/〇。 [合成例5]聚矽氧烷(A4)的合成 在附攪拌器、回流冷凝管、投入口、溫度計的四口 燒瓶中投入並混合1,3_二乙烯基四甲基二矽氧 烷49g、苯基二曱氧基矽烷442g、二甲基二甲氧基矽烷85g 、水143g、二氟甲石夤酸〇.4g以及曱苯5〇〇g,加熱回流i小 時。冷卻後,分離去除下層,水洗上層的曱苯溶液層。 在水洗後的甲苯溶液層中加入3 -環氧丙氧基丙基曱基二 甲氧基矽烷8 g和氫氧化鉀〇 · 5 g並加熱回流i小時。接著, 將甲醇蒸顧去除’以共彿脫水去除過量的水。接著加熱 回流4小時。反應後的甲苯溶液在冷卻後,以乙酸〇 &中 和並水洗。去除水後,在減壓下將甲苯蒸餾去除濃縮, 獲得具有烯基1 5莫耳%以及環氧基!莫耳%(以聚石夕氧烧 中所含的全部Si原子的數目為i 00莫耳%)的聚矽氧烧 (A4)。以凝膠滲透層析法測定了(A4)的聚苯乙烯換算重 量平均分子量’為1800。聚矽氧烷(A4)的化學式為 (ViMe2Si01/2)15(PhSi〇3/2)64(Me2Si02/2)2〇(EpMeSi〇2/2)] -20- 201247785 (Vi表示乙烯基、Me表示曱基、Ph表示苯基、Ep表示環 氧丙氧基丙基。下標數字表示mol %)。以聚石夕氧烧(A4) 中所含的全部Si原子的數目為100莫耳%時,稀基的含有 比例為15mol%,環氧基的含有比例為im〇l%,芳基的含 有比例為64mol%。 [合成例6] 聚矽氧烷(A5)的合成 在附攪拌器、回流冷凝管、投入口、溫度計的四口 燒瓶中投入並混合1,3-二乙烯基- l,l,3,3-四甲基二石夕氧 烷82g、苯基三甲氧基矽烷525g、水143g、三氟曱項酸〇4g 以及曱苯5 0 0 g ’加熱回流1小時。冷卻後,分離去除下層 ,水洗上層的曱苯溶液層。在水洗後的曱苯溶液層中加 入3-¼氧丙氧基丙基甲基一甲氧基碎烧314g和水130g以 及氫氧化鉀0.5 g並加熱回流1小時。接著,將曱醇蒸顧去 除,以共沸脫水去除過量的水。接著加熱回流4小時。反 應後的甲本溶液在冷卻後’以乙酸0.6 g中和並水洗。去 除水後’在減壓下將曱苯蒸餾去除濃縮,獲得具有稀基 25莫耳%以及環氧基40莫耳%(以聚矽氧烷中所含的全部 Si原子的數目為1〇〇莫耳%)的聚矽氧烷(A5)。以凝膠滲透 層析法測定了(A5)的聚苯乙烯換算重量平均分子量,為 1600。聚矽氧烷(A5)的化學式為(ViMe2Si〇i/2)25 (PhSiO3/2)75(EpMeSiO2/2)40 (Vi表示乙烯基、Me表示曱基 、Ph表示苯基、Ep表示環氧丙氧基丙基。下標數字表示 mol%)。以聚矽氧烷(A5)中所含的全部Si原子的數目為 1〇〇莫耳%時’烯基的含有比例為25πιο1%,環氧基的含有 比例為40mol% ’芳基的含有比例為75rnol%。 -21 - 201247785 [合成例7]聚矽氧烷(A6)的合成 在附授拌器、回流冷凝管、投入口、溫度計的四口 燒瓶中投入並混合丨,3_二乙烯基- -四甲基二矽氧 烧33g、苯基三甲氧基矽烷442g、二甲基二曱氧基矽烷85g 、二苯基二甲氧基矽烷43g、水155g、三氟甲磺酸0.4g以 及甲苯500g ’加熱回流1小時。冷卻後,分離去除下層, 水洗上層的f苯溶液層。在水洗後的曱苯溶液層中加入 3-環氧丙氧基丙基甲基二甲氧基矽烷8g和氫氧化鉀〇5g 並且加熱回流1小時。接著,將曱醇蒸餾去除,以共沸脫 水去除過置的水。接著加熱回流4小時。反應後的甲苯溶 液在冷卻後’以乙酸〇.6g中和並水洗。去除水後,在減 壓下將甲苯蒸館去除濃縮,而獲得具有烯基丨〇莫耳%以 及環氧基1莫耳%(以聚矽氧烷中所含的全部si原子的數 目為1 00莫耳%)的聚矽氧烷(A6)。以凝膠滲透層析法測定 了(A6)的聚苯乙烯換算重量平均分子量,為18〇〇。聚矽 氧院(A6)的化學式為(viMe2Si01/2)1()(PhSi03/2)64(Ph2Si 〇2/2)5(Me2SiO2/2)20(EpMeSi〇"2)i ⑺表示乙烯基、Me表 :曱基、卩11表不笨基' Ep表示環氧丙氧基丙基。下標數 字表不mol/〇)。以聚石夕氧烷(A6)中所含的全部以原子的數 目為1〇〇莫耳%時,烯基的含有比例為i〇m〇i%,環氧基的 含有比例為lm〇1% ’彡基的含有比例為74m〇1%。 [合成例8]聚矽氧烷(B1)的合成 在附攪拌器、回流冷凝管、投入口、溫度計的四口 乂瓶中杈入並此合苯基三曱氧基矽烷丨95经和三氟甲磺酸 0.2g ’ -邊授拌-邊用15分鐘滴人水13g,滴人結束後, -22- 201247785 加熱回流1小時。冷卻至室溫後,加入M,3,3四甲基二 矽氧烷119g,一邊攪拌一邊滴入乙酸88g。滴入結束後, 攪拌混合液並且升溫至5(TC,反應3小時。冷卻至室溫後 ,加入甲苯和水,充分混合而靜置,分離去除水層:水 洗上層的甲苯溶液層後,減壓濃縮,而獲得曱基苯基氫 化聚矽氧烷(B1)。聚矽氧烷(B1)的化學式為(ημ62& 〇1/2)60(PhSiO3/2)40 (Me表示曱基,ph表示苯基。下標數 字表示mol%)。 [合成例9] 聚矽氧烷(B2)的合成 在附攪拌器、回流冷凝管、投入口、溫度計的四口燒 瓶中投入並混合二苯基二曱氧基矽烷22〇g和三氟曱磺酸 0.6g’加入1,1,3,3-四甲基二石夕氧烧147g,一邊搜拌一邊花 費30分鐘滴入乙酸108g。滴入結束後,攪拌混合液並且升 溫至50 C並反應3小時。冷卻至室溫後,加入曱苯和水, 充分混合而靜置’分離去除水層。將上層的曱苯溶液層水 洗3次後,進行減壓濃縮,獲得二苯基氫化聚矽氧烷(B2) 。聚矽氧烷(B2)的化學式為(HMe2Si〇i/2)5〇(ph2Si〇2/2)5。 (Me表示曱基’ Ph表示苯基。下標數字表示m〇1%)。 (1-2)重量平均分子量 所獲得的聚矽氧烧的重量平均分子量(Mw),係藉由 凝膠滲透層析法(GPC)以下述條件測定,以作為聚苯乙烯 換算值求出。 裝置.HLC-8120C (TOSOH CORPORATION製) 管柱· TSK-gel MultiporeHXL-M (TOSOH CORPORATION 製) -23- 201247785 展開劑:THF、流量 〇.5mL/min、負載量 5.0%、ι〇〇μχ (1 -3)烯基、環氧基以及芳基的含有比例、以及聚矽氧烷 的化學式。 所獲得的聚矽氧烷中所含的烯基、環氧基以及芳基 的含有比例(以聚矽氧烷中所含的全部Si原子的數目為 1 00莫耳%)、以及聚石夕氧烧的化學式,係利用29Si NMR 及13C NMR算出。 (2)硬化性組成物的製備 [實施例1〜5以及比較例1和2 ] 在95常壓下,以表1所示的摻合量將下述表1所示 的成分混合,獲得實施例1〜4和比較例1和2的硬化性組成 物。表1中的數值表示質量份。此外,表1中的各成分的 細節如以下。 [表"_ 成分 實施例1 實施例2 實施例3 實施例4 實施例5 比較例1 比較例2 AR1 65 65 A1 68 A2 68 A3 68 3 A4 76 A5 3 A6 82 B1 3 3 3 3 3 3 3 B2 26 26 26 18 12 26 26 C1 0.01 0.01 0.01 0.01 0.01 0.01 0.01 D1 1 1 1 1 1 1 1 D2 1 1 1 1 1 1 1 D3 1 1 1 1 1 1 1 -24- 201247785 (:1:#與1,3-二乙烯基-1,1,3,3_四曱基二矽氧烷的錯 合物(鉑金屬量4質量〇/0) D1 :環-四曱基四乙烯基四矽氧烷 D2:二苯基雙(二甲基乙烯基矽烷氧基)矽烷 D3:苯基三(二曱基乙烯基矽烷氧基)矽烷 (3)硬化性組成物的評價 利用下述(3-1)〜(3-6)的手法對實施例1〜4和比較例1 和2的硬化性組成物進行評價。將評價結果示於表2。 (3-1)黏度 使用E型黏度計在2 5 °C測定硬化性組成物的黏度。 (3-2)硬度 在TEFLON(註冊商標)的平板上鑲2mm厚的框,塗布 硬化性組成物成為框的高度,藉由在1 5(rc的熱風循環式 烘相加熱5小時製作出5〇mm><50mmxlmm的硬化物。藉由 JIS K6253中規定的d型硬度計測定該硬化物的硬度。 (3 - 3)折射率 使用將硬化性組成物製成硬度測定用之硬化物,以' Washed the upper layer of A stupid + P 4 liquid layer. To the layer of the benzene solution after washing with water was added -18-'201247785 into 3 g of 3-glycidoxypropylmethyl decyloxy decane and 0.5 g of potassium hydroxide and heated under reflux for 1 hour. The methanol is then distilled off to dehydrate the excess water. It was then heated to reflux for 4 hours. After the reaction, the toluene solution was cooled, neutralized with acetic acid 0 _ 6 g, and washed with water. After removing water, the toluene was distilled off under reduced pressure to obtain a molar ratio of 25 mol% of an alkenyl group and 1 mol% of an epoxy group (in the case of poly; 100 mole % of polyoxyalkylene (A2). The weight average molecular weight of the polyethylidene of (A2) was measured by gel permeation chromatography to be 2 〇〇〇. The chemical formula of polyoxic (A2) is (ViMe2Si〇i/2h5 (phSi〇3/2h4 (EpMeSiOw), (Vi stands for vinyl, Me stands for sulfhydryl, ph stands for stupid, Ep stands for glycidoxy) Propyl. The subscript number indicates m〇丨..). When the number of all Si atoms contained in the polyoxan (A2) is 1% mol%, the content of the alkenyl group is 25 mol%. The content ratio of the epoxy group is lm 〇 1% 'the content ratio of the aryl group is 7 4 m ο 1 %. [Synthesis Example 4] Synthesis of polyoxy siloxane (A3) with a stirrer, a reflux condenser, and an input a four-necked flask of a mouth and a thermometer was charged and mixed with 1,3 -diethyl _ 1,1,3,3 -tetramethyl oxazepine 82 g, stupid dimethoxy decane 5 lig, water i 43 g, 4 g of trifluorosulfonium sulfonate and 500 g of toluene were heated under reflux for 1 hour. After cooling, the lower layer of the toluene solution of the upper layer was washed and removed. 3-glycidoxypropyl group was added to the layer of the benzene solution after washing. 16 g of decyloxydecane and 3 g of potassium hydroxide and 0.5 g of potassium hydroxide were heated under reflux for 1 hour. Then, the sterol was distilled off to remove the straight water by co-dehydration. Discharge for 4 hours. After the anti-corrosion toluene solution was cooled, it was neutralized with 〇6 g of acetic acid and washed with water. After removing the water, the carbendazole was removed under reduced pressure; the atrophy was obtained to obtain an alkenyl group of 2 5 m. -19- 201247785 /〇 and 裒oxy 2mol% (polyoxane (A3) in the number of all si atoms contained in the polyoxoxime). Gel permeation layer The polystyrene-equivalent weight average molecular weight of (A3) was determined by the analytical method, and the chemical formula of polyoxyalkylene (A3) was (ViMe2Si01/2)25(PhSi〇3/2)73 (EpMeSi02/2 2 (Vi represents vinyl, Me represents methyl, ph represents phenyl, EP represents glycidoxypropyl. The subscript number indicates mol%). All Si contained in polyoxyalkylene (A3) When the number of atoms is 1 〇〇 mol %, the content ratio of the alkenyl group is 25 mol 〇 /, and the content ratio of the epoxy group is 2 m 〇 1% 'the content ratio of the aryl group is 73 mol / 〇. [Synthesis Example 5 Synthesis of Polyoxane (A4) In a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer, 1,3-divinyltetramethyldioxane 49g and phenyldiene were charged and mixed. 442 g of oxydecane, 85 g of dimethyldimethoxydecane, 143 g of water, 〇4 g of difluoromethane phthalate, and 5 g of fluorene benzene were heated under reflux for 1 hour. After cooling, the lower layer was separated and washed, and the upper layer was washed with water. Toluene solution layer. 3 g of glycidoxypropyl decyl dimethoxy decane and 5 g of potassium hydroxide were added to the toluene solution layer after washing with water and heated under reflux for 1 hour. Steaming removes 'to remove excess water by dehydration. It was then heated to reflux for 4 hours. The toluene solution after the reaction was cooled, neutralized with cerium acetate & and washed with water. After removing the water, the toluene was distilled off under reduced pressure to concentrate to obtain an alkenyl group of 15 mol% and an epoxy group! Mole % (a total of i 00 mol% of the total amount of Si atoms contained in the polychalcoxime) is a polyoxymethane (A4). The polystyrene-equivalent weight average molecular weight ' of (A4) was determined by gel permeation chromatography to be 1800. The chemical formula of polyoxyalkylene (A4) is (ViMe2Si01/2)15(PhSi〇3/2)64(Me2Si02/2)2〇(EpMeSi〇2/2)] -20- 201247785 (Vi represents vinyl, Me Indicates a fluorenyl group, Ph represents a phenyl group, and Ep represents a glycidoxypropyl group. The subscript number indicates mol %). When the number of all Si atoms contained in the polyoxin (A4) is 100 mol%, the content of the dilute base is 15 mol%, and the content of the epoxy group is im〇l%, and the content of the aryl group The ratio is 64 mol%. [Synthesis Example 6] Synthesis of polyoxyalkylene (A5) In a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer, 1,3-divinyl-l,l,3,3 was charged and mixed. - tetramethyl oxazepine 82 g, phenyl trimethoxy decane 525 g, water 143 g, trifluoroantimony ruthenium 4 g, and toluene 50,000 g were heated under reflux for 1 hour. After cooling, the lower layer was separated and washed, and the upper layer of the benzene solution was washed with water. To the layer of the benzene solution after washing with water, 3-1⁄4 of oxypropyloxypropylmethyl-methoxy-methoxy 314 g and 130 g of water and 0.5 g of potassium hydroxide were added and heated under reflux for 1 hour. Next, the sterol is distilled off to remove excess water by azeotropic dehydration. It was then heated to reflux for 4 hours. The reacted solution of the solution was neutralized with 0.6 g of acetic acid and washed with water after cooling. After removing water, 'the benzene was distilled off and concentrated under reduced pressure to obtain 25 mol% of a rare base and 40 mol% of an epoxy group (the number of all Si atoms contained in the polyoxyalkylene was 1〇〇) Mole %) of polyoxyalkylene (A5). The polystyrene-equivalent weight average molecular weight of (A5) was measured by gel permeation chromatography to be 1600. The chemical formula of polyoxyalkylene (A5) is (ViMe2Si〇i/2)25 (PhSiO3/2)75(EpMeSiO2/2)40 (Vi represents vinyl, Me represents fluorenyl, Ph represents phenyl, Ep represents epoxy Propoxypropyl. The subscript number indicates mol%). When the number of all Si atoms contained in the polyoxyalkylene (A5) is 1 〇〇 mol%, the content ratio of the 'alkenyl group is 25 πιο1%, and the content ratio of the epoxy group is 40 mol%'. It is 75rnol%. -21 - 201247785 [Synthesis Example 7] Synthesis of polyoxane (A6) In a four-necked flask equipped with a mixer, a reflux condenser, an inlet, and a thermometer, 丨, 3_divinyl--four 33 g of methyl dioxoxime, 442 g of phenyltrimethoxydecane, 85 g of dimethyldioxanoxane, 43 g of diphenyldimethoxydecane, 155 g of water, 0.4 g of trifluoromethanesulfonic acid and 500 g of toluene. Heat to reflux for 1 hour. After cooling, the lower layer was separated and washed, and the upper layer of the f-benzene solution was washed with water. To the layer of the benzene solution after washing with water, 8 g of 3-glycidoxypropylmethyldimethoxy decane and 5 g of potassium hydroxide hydrazine were added and heated under reflux for 1 hour. Next, the decyl alcohol was distilled off, and the excess water was removed by azeotropic dehydration. It was then heated to reflux for 4 hours. The toluene solution after the reaction was neutralized with 〇. 6 g of acetic acid and washed with water. After removing the water, the toluene was evaporated and concentrated under reduced pressure to obtain an alkenyl oxime % and an epoxy group 1 mol% (the number of all the Si atoms contained in the polyoxy siloxane was 1). 00 mol% of polyoxyalkylene (A6). The polystyrene-equivalent weight average molecular weight of (A6) was measured by gel permeation chromatography to be 18 Å. The chemical formula of polyanion (A6) is (viMe2Si01/2)1()(PhSi03/2)64(Ph2Si 〇2/2)5(Me2SiO2/2)20(EpMeSi〇"2)i (7) represents vinyl Me table: 曱 base, 卩 11 table is not stupid 'Ep represents glycidoxypropyl. The subscript number table is not mol/〇). When the total number of atoms contained in the polyoxane (A6) is 1% by mole, the content of the alkenyl group is i〇m〇i%, and the content ratio of the epoxy group is lm〇1. The % '彡 base content is 74m〇1%. [Synthesis Example 8] Synthesis of polyoxyalkylene (B1) was carried out in a four-necked vial equipped with a stirrer, a reflux condenser, an inlet, and a thermometer, and the phenyltrimethoxyoxane 95 and the three were combined. 0.2 g of fluoromethanesulfonic acid - while stirring - 13 g of human water was dripped for 15 minutes, and after the completion of the dropping, -22-201247785 was heated to reflux for 1 hour. After cooling to room temperature, 119 g of M,3,3 tetramethyldioxane was added, and 88 g of acetic acid was added dropwise while stirring. After the completion of the dropwise addition, the mixture was stirred and heated to 5 (TC, reaction for 3 hours. After cooling to room temperature, toluene and water were added, and the mixture was thoroughly mixed and allowed to stand, and the aqueous layer was separated and removed: after washing the upper layer of the toluene solution, the mixture was reduced. Concentration by pressure to obtain nonylphenyl hydrogenated polyoxane (B1). The chemical formula of polyoxyalkylene (B1) is (ημ62 & 〇 1/2) 60 (PhSiO3/2) 40 (Me represents sulfhydryl, ph Phenyl. The subscript number indicates mol%). [Synthesis Example 9] Synthesis of polyoxyalkylene (B2) In a four-necked flask equipped with a stirrer, a reflux condenser, an inlet, and a thermometer, diphenyl was charged and mixed. 22 g of dimethoxydecane and 0.6 g of trifluorosulfonium sulfonate were added to 1,147 g of 1,1,3,3-tetramethyldiazepine, and 108 g of acetic acid was added dropwise over 30 minutes while mixing. After completion, the mixture was stirred and heated to 50 C and reacted for 3 hours. After cooling to room temperature, toluene and water were added, and the mixture was thoroughly mixed to allow 'separation and removal of the aqueous layer. The upper layer of the benzene solution was washed 3 times. Concentration under reduced pressure to obtain diphenyl hydrogenated polyoxane (B2). The chemical formula of polyoxyalkylene (B2) is (HMe2Si〇i /2) 5 〇 (ph2Si 〇 2/2) 5. (Me represents thiol ' Ph stands for phenyl. The subscript number indicates m 〇 1%). (1-2) Polyoxymethane obtained by weight average molecular weight The weight average molecular weight (Mw) is determined by gel permeation chromatography (GPC) under the following conditions and is obtained as a polystyrene equivalent. Device. HLC-8120C (manufactured by TOSOH CORPORATION) Columns · TSK- Gel MultiporeHXL-M (manufactured by TOSOH CORPORATION) -23- 201247785 Developer: THF, flow rate 55mL/min, loading amount 5.0%, ι〇〇μχ (1 -3) alkenyl group, epoxy group and aryl group The ratio, and the chemical formula of the polyoxyalkylene. The content ratio of the alkenyl group, the epoxy group, and the aryl group contained in the obtained polyoxyalkylene (the number of all Si atoms contained in the polyoxyalkylene is 1) 00 mol %), and the chemical formula of polyoxin, which was calculated by 29Si NMR and 13C NMR. (2) Preparation of hardenable composition [Examples 1 to 5 and Comparative Examples 1 and 2] At 95 atmospheric pressure Next, the components shown in the following Table 1 were mixed in the blending amounts shown in Table 1, and the curable compositions of Examples 1 to 4 and Comparative Examples 1 and 2 were obtained. The numerical values represent parts by mass. Further, the details of the respective components in Table 1 are as follows. [Table "_Component Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example 1 Comparative Example 2 AR1 65 65 A1 68 A2 68 A3 68 3 A4 76 A5 3 A6 82 B1 3 3 3 3 3 3 3 B2 26 26 26 18 12 26 26 C1 0.01 0.01 0.01 0.01 0.01 0.01 D1 1 1 1 1 1 1 1 D2 1 1 1 1 1 1 1 D3 1 1 1 1 1 1 1 -24- 201247785 (:1:# complex with 1,3-divinyl-1,1,3,3_tetradecyldioxane (amount of platinum metal) 4 mass 〇/0) D1: cyclo-tetradecyltetravinyltetraoxane D2: diphenyl bis(dimethylvinyl decyloxy) decane D3: phenyl tris(didecylvinyl decyloxy) Evaluation of the curable composition of the decane (3) The curable compositions of Examples 1 to 4 and Comparative Examples 1 and 2 were evaluated by the following methods (3-1) to (3-6). The evaluation results are shown in Table 2. (3-1) Viscosity The viscosity of the curable composition was measured at 25 ° C using an E-type viscometer. (3-2) Hardness A frame of 2 mm thick was placed on a flat plate of TEFLON (registered trademark), and the curable composition was applied to the height of the frame, and was produced by heating in a hot air circulating type of 5 hours of rc for 5 hours. 〇mm><50mmxlmm hardened material. The hardness of the cured product is measured by a d-type durometer specified in JIS K6253. (3 - 3) Refractive index is obtained by using a curable composition as a cured product for hardness measurement. Take

Metricon Corporation製Model20 10全反射式折射計測定 25°C下的折射率。此外,測定波長為408nm。 (3 - 4)光透過率變化 在1mm的石英板上放置圓形(直徑2cm、厚度imm)的 框’在此框内填充硬化性組成物,測定藉由以l5(rc的熱 風循環式烘箱加熱5小時硬化而製作之硬化物(光路長 1.0mm)在25°C下之波長460 nm的光透過率。接著,為了 調查加速劣化試驗後之著色的程度,同樣地測定以1 5〇 -25- 201247785 °C的熱循環式烘箱將上述硬化物加熱老化1 000小時後, 在25°C下之波長460nm的光透過率。由加熱老化後的光 透過率相對於加熱老化前的光透過率之比,以下述的基 準評價光透過率變化。 A :前述比為9 8 %以上 B :前述比為90%以上未滿98% C :前述比未滿90% (3-5)接著強度 在直徑5 mm高度5mm的鋁圓柱的底面塗布硬化性組 成物而黏貼於各種測試面板,以在1 5 〇的熱風循環式烘 箱中放置1小時’獲得利用硬化性組成物而將直徑5 m m高 度5mm的鋁圓柱密接於測試面板的試驗片。採用Dage& 司製series-4000PXY作為測定裝置,將密接於各種測試 面板上的鋁圓柱以50μπι/秒的速度剝離,測定此時的載重 作為接著強度,以下述的基準來評價。 Α.接者強度為i〇kg重以上 B :接著強度為5kg重以上未滿1〇0重 C .接著強度未滿5 k g重 (3-6)耐熱性 使硬化性組成物成為乾燥獏厚為imm的方式而塗^The refractive index at 25 ° C was measured by a Model 20 10 total reflection refractometer manufactured by Metricon Corporation. Further, the measurement wavelength was 408 nm. (3 - 4) Light transmittance change A circular (2 cm in diameter, thickness imm) frame was placed on a 1 mm quartz plate. The frame was filled with a hardenable composition, and the measurement was performed by a hot air circulating oven at 15 (rc). The light transmittance of the cured product (light path length 1.0 mm) which was cured by heating for 5 hours at a wavelength of 460 nm at 25 ° C. Next, in order to investigate the degree of coloration after the accelerated deterioration test, the same measurement was carried out at 15 〇 - 25-201247785 °C heat cycle oven to heat the above cured product after heating for 1 000 hours, the light transmittance at a wavelength of 460 nm at 25 ° C. The light transmittance after heat aging is relative to the light before heat aging The ratio of the ratio is evaluated by the following criteria: A: The ratio is 98% or more B: The ratio is 90% or more and 98% or less C: The ratio is less than 90% (3-5) A hardening composition was applied to the bottom surface of an aluminum cylinder having a diameter of 5 mm and a height of 5 mm and adhered to various test panels to be placed in a 15 〇 hot air circulating oven for 1 hour to obtain a height of 5 mm using a hardening composition. A 5 mm aluminum cylinder is attached to the test piece of the test panel. The age-ample series-4000PXY was used as a measuring device, and the aluminum cylinders which were intimately attached to various test panels were peeled off at a rate of 50 μm/sec. The load at this time was measured as the adhesion strength, and evaluated according to the following criteria. It is i〇kg or more B: the strength is 5kg or more and less than 1〇0 weight C. Then the strength is less than 5 kg (3-6) heat resistance, so that the curable composition becomes dry and thick, imm. Paint ^

於石央玻璃上後,在i 00°c下乾燥硬化丨小時,接著在UAfter drying on Shihyang glass, dry and harden at i 00 °c for an hour, then at U

C下乾燥硬化5小時而制你涵儿& L 丁向衣作硬化物。在1501下保管該;ε 化物5 0 〇小時,以目視觀家彳 、 曰祝硯察保f後之硬化物的外觀,以Ί 述的基準評價耐熱性。 (顏色變化) -26- 201247785 A :沒有顏色變化 B :些微地黃色化 C :明顯地黃色化 (3-7)總輻射束測定(亮度評價) 將硬化性組成物在光學用半導體的表面安裝型 (Topview型’包含由圖!的光半導體2、電極6 '導線7以 及反射器3所構成的部分)封裝進行塗布,在15〇。〇加熱1 小時而製成評價用樣品。 使用總輻射束測定裝置(紫外,可視,近紅外光分光 光譜儀MCPD-3700、φ 300mm積分球(半球狀積分球)), 實施上述評價用樣品的輻射束測定。以%算出上述評價 用樣品的輕射束’相對於在塗布密封材料之前的封裝通 電使其發光而測定之初期輻射束的比率,以下述的基準 評價。 A :前述比率為1 1 〇 %以上 B :前述比率為未滿1丨〇❹/。、1 0 〇 %以上 C :前述比率為未滿1 〇 〇 〇/0 [表2]Dry and harden for 5 hours under C to make your stalks and stalks as hardened. This was stored at 1501; the appearance of the cured product after visual inspection of the ε 、 、 , , , , , , , , , f f f f f f f f f f f f f f f f f f f f f f f f f f f (color change) -26- 201247785 A : no color change B : slightly yellowish C : apparently yellow (3-7) total radiation beam measurement (brightness evaluation) The hardenable composition is mounted on the surface of the optical semiconductor The type (the topview type "the portion including the photo-semiconductor 2, the electrode 6' wire 7 and the reflector 3 of Fig. 3" was packaged and applied at 15 Å. The crucible was heated for 1 hour to prepare a sample for evaluation. The radiation beam measurement of the sample for evaluation described above was carried out using a total radiation beam measuring apparatus (ultraviolet, visible, near-infrared spectroscopic spectrometer MCPD-3700, φ 300 mm integrating sphere (hemispherical integrating sphere)). The ratio of the light beam ' of the sample for evaluation of the above evaluation to the initial radiation beam measured by light-emitting of the package before the application of the sealing material was measured in %, and was evaluated on the basis of the following criteria. A: The aforementioned ratio is 1 1 〇 % or more B : The aforementioned ratio is less than 1 丨〇❹ /. , 1 0 〇 % or more C : The aforementioned ratio is less than 1 〇 〇 〇/0 [Table 2]

實施例1 實施例2 實施例3 實施例4 實施例5 比較例1 比較例2 黏度(mPa.s) 2000 2000 2000 4000 15000 2000 2000 硬度(D) 55 55 55 45 45 55 55 折射率 1.57 1.57 1.57 1.56 1.57 1.57 1.57 光透過率 A A A A A A A 接著強度 A A A A A A C 而才熱性 A A A A A A A 總輻射束 A A A A A B A -27- 201247785 由表2所不之結果可知,將含環氧基的聚矽氧烷 夕氧炫·(A)备作黏著促進劑使用的比較例1和2中,使 壞乳基多的聚 J取發氧烷(Α5)之比較例1,總輻射束即亮 ‘而使用%氧基少的聚矽氧烷(A3)之比較例2,接著 隻2 ’又有實現兼顧高亮度與高黏著性。相對於此 將3衣氧基的聚矽氧烷之聚矽氧烷(Α)作為主要成 f施例1〜5中’總輻射束及接著強度均高,實現了兼 亮度與高黏著性。 [產業上之可利用性] 本發月的硬化性組成物’由於其硬化物為透明 且即!放置於高溫氣體環境下其光透過率的降低也 具有高的點签,地,π i 立 考生 而有用於光學用半導體元件及光 .P件的役封劑、點著劑、灌封劑(potting agent)、 二布=底°卩填充劑等。本發明的硬化物由於即使 路在…皿’其光透過率的降低也小,而具有在高溫 :的製造步驟中光透過率的降低小,長期可靠性優 杜:t發明的硬化物’特別是在用於高亮度的發 之光學用半導體裝置時,由於總輻射束變高, 用^作為高亮度的光源附近所使用的光學部件。 【圖式簡單說明】 圖1所示為光半導體裝置的一個具體例子的模式 I主要元件符號說明】 1 光半導體裝置 2 半導體發光元件- 3 反射器 的聚 用了 度低 強度 ,在 分的 顧高 ,並 小, 半導 保護 是暴 條件 異之 光元 而有 圓0 -28- 201247785 4 密封材料 5 顆粒 6 電極 7 導線 -29Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example 1 Comparative Example 2 Viscosity (mPa.s) 2000 2000 2000 4000 15000 2000 2000 Hardness (D) 55 55 55 45 45 55 55 Refractive index 1.57 1.57 1.57 1.56 1.57 1.57 1.57 light transmittance AAAAAAA followed by intensity AAAAAAC and then thermal AAAAAAA total radiation beam AAAAABA -27- 201247785 From the results of Table 2, it is known that the epoxy group-containing polyoxyalkylene oxide (A) In Comparative Examples 1 and 2 used as an adhesion promoter, Comparative Example 1 in which a polylactic acid group having a bad emulsification group was obtained, and the total radiation beam was bright, and a polyoxyalkylene having a small amount of oxygen was used. In Comparative Example 2 of A3), only 2' was achieved with both high brightness and high adhesion. On the other hand, the polyoxyxane of the poly(oxyloxy) having 3 methoxy groups was used as the main component f. In the first to fifth embodiments, the total radiation beam and the subsequent strength were high, and the brightness and the high adhesion were achieved. [Industrial Applicability] The hardenable composition of this month's month is transparent because it is cured! It is also placed in a high-temperature gas environment, and its light transmittance is also lowered. It has a high point-and-shoot, and is used for optical semiconductor components and optical components, such as sealants, dots, and potting agents. Potting agent), two cloth = bottom ° 卩 filler. The cured product of the present invention has a small decrease in light transmittance even in the case of a dish, and has a small decrease in light transmittance in a manufacturing step of high temperature: long-term reliability is excellent: In the case of a semiconductor device for high-intensity optical use, since the total radiation beam is high, it is used as an optical member used in the vicinity of a high-luminance light source. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram showing the main components of a mode I of a specific example of an optical semiconductor device. 1 Optical semiconductor device 2 Semiconductor light-emitting device - 3 The degree of concentration of the reflector is low, and High, and small, semi-conducting protection is a violent condition with a light element and a circle 0 -28- 201247785 4 sealing material 5 particles 6 electrode 7 wire -29

Claims (1)

201247785 七、申請專利範圍: 1·-種硬化性組成物’其係為含有:具有稀基及密接性 基團的聚矽氧烷(A )、每丨分子中至少具有兩個與矽原 子結合之氫原子的聚矽氧烷(B)(但聚矽氧烷(A)除外) 、及矽氳化反應用催化劑(C)的硬化性組成物其特徵 為以該硬化性組成物中所含之全部成分的含量合計為 1〇〇質量%時,聚矽氧烷(A)的含有比例為4〇〜9〇質量% 2·如申請專利範圍第〖項之硬化性組成物,其中,以聚矽 氧烷(A)中所含之全部Si原子的數目為100莫耳%時,聚 矽氧烷(A)十烯基的含量為3〜5〇莫耳%,密接性基團的 含量為0.01〜10莫耳%。 其中,該密接 3.如申請專利範圍第2項之硬化性組成物 性基團是具有環氧基的基團。 其中,該聚矽 (RE 4·如申請專利範圍第3項之硬化性組成物 氧院(A)以下述化學式表示: S i 〇1/2) b (RViRi s i 02/2) Ο (R 1 R12 S i 01/2) a (r s · RJSi〇2/2) d (R^Sio^^ u (R^si〇3/2) (}si〇Z2) h (X 1/2' (式中’ RVl表示具有烯基的基團’ rEp表示具有環氧基 的基團,R各自獨立地表示1價的烴基(但具有烯基的基 團除外)’X表示氫原子或者碳原子數⑴的燒基,a表 不0以上的整數、b表示〇以上的整數、c表示〇以上的整 數d表不1以上的整數、e表示〇以上的整數、f表示〇 以上的整數、h表示〇以上的整數,丨表示〇以上的整數, 且a+c為1以上的整數)。 -30- 201247785 5. 如申請專利範圍第4項之硬化性組成物,其中’聚石夕氧 烷⑷具有芳基’並且以聚石夕氧烷⑷中所含的全部。 原子的數目為100莫耳%時’聚矽氧烷⑷中所含之芳美 的含$為30〜12〇莫耳%。 6. 種硬化物’其特徵為由如申請專利範圍第^至$項中 任一項之硬化性組成物而獲得。 7. -種光半導體裝置’其特徵為具有半導體發光元件和 覆蓋該+導體發光元件之如申請專利範圍第6項之硬 化物。 8 .〆種^ ^氧烷,其係以下述化學式表示: (R R 2S 1 01/2) a (RJ3S i 01/2) b (RViRi s i 〇2/2) c (RE PR1 S i 2/2) d (R^S i 02/2) e (riS i 〇3/2) f (S i 〇4/2) h (x 〇l/2> > (式中,R表示具有烯基的基團,REp表示具有環氧基 的基團’R1各自獨立地表示}價的烴基(但具有烯基的基 團除外),X表示氫原子或者碳原子數1至3的烷基,a表 系〇以上的整數、b表示〇以上的整數、c表示〇以上的整 數、d表不1以上的整數、e表示〇以上的整數、f表示〇 以上的整數、h表示〇以上的整數,丨表示〇以上的整數, 真a + c為1以上的整數)° '31-201247785 VII. Patent application scope: 1. A kind of hardening composition' contains: a polyoxyalkylene (A) having a dilute group and an adhesion group, and at least two of each molecule are combined with a deuterium atom. The polyoxyalkylene (B) of the hydrogen atom (except for the polyoxyalkylene (A)) and the curable composition of the catalyst for the deuteration reaction (C) are characterized by being contained in the curable composition. When the total content of all the components is 1% by mass, the content of the polyoxyalkylene (A) is 4 〇 to 9 〇% by mass. 2. The sclerosing composition according to the scope of the patent application, wherein When the number of all Si atoms contained in the polyoxyalkylene (A) is 100 mol%, the content of the polydecane (A) dedecenyl group is 3 to 5 mol%, and the content of the adhesion group is It is 0.01 to 10 mol%. Here, the close contact 3. The hardenable constituent physical group as in the second aspect of the patent application is a group having an epoxy group. Among them, the polyfluorene (RE 4 · the sclerosing composition of the third item of the patent application scope (A) is represented by the following chemical formula: S i 〇 1/2) b (RViRi si 02/2) Ο (R 1 R12 S i 01/2) a (rs · RJSi〇2/2) d (R^Sio^^ u (R^si〇3/2) (}si〇Z2) h (X 1/2' (where 'RV1 represents a group having an alkenyl group' rEp represents a group having an epoxy group, and R each independently represents a monovalent hydrocarbon group (except for a group having an alkenyl group) 'X represents a hydrogen atom or a number of carbon atoms (1) In the case of a base, a is not an integer of 0 or more, b is an integer of 〇 or more, c is an integer of 〇 or more, an integer of 1 or more, e is an integer of 〇 or more, f is an integer of 〇 or more, and h is 〇 or more. The integer, 丨 represents an integer above 〇, and a+c is an integer of 1 or more.) -30- 201247785 5. The sclerosing composition of claim 4, wherein 'polyoxane (4) has a fang The base 'and all contained in the polyoxane (4). When the number of atoms is 100 mol%, the content of the aromatic content contained in the polyoxyalkylene (4) is 30 to 12 mol%. Hardened The invention is obtained by the curable composition as claimed in any one of the above claims. The light-emitting semiconductor device is characterized in that it has a semiconductor light-emitting element and a patent application covering the +-conductor light-emitting element. The hardened material of the sixth item. 8. The oxane, which is represented by the following chemical formula: (RR 2S 1 01/2) a (RJ3S i 01/2) b (RViRi si 〇 2/2) c (RE PR1 S i 2/2) d (R^S i 02/2) e (riS i 〇3/2) f (S i 〇4/2) h (x 〇l/2>> R represents a group having an alkenyl group, and REp represents a group having an epoxy group, 'R1 each independently represents a hydrocarbon group of a valence (except for a group having an alkenyl group), and X represents a hydrogen atom or a carbon number of 1 to The alkyl group of 3 is an integer above a, the b represents an integer of 〇 or more, c represents an integer of 〇 or more, d represents an integer of 1 or more, e represents an integer of 〇 or more, and f represents an integer of 〇 or more, h. Indicates an integer above 〇, 丨 denotes an integer above 〇, true a + c is an integer of 1 or more) ° '31-
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