201243979 六、發明說明： 【發明所屬之技術領域】 本發明係關於在（例如）用以產生多層半導體晶圓之兩個 晶圓之間進行的直接晶圓接合，該直接晶圓接合係（例如） 用於需要將微組件之一或多個層轉印至最終支撐基板上之 3D整合技術，而且用於電路轉印或用於背光成像器件之製 造中。該（等）經轉印之層包括至少部分地產生於初始基板 上之微組件（電子微組件、光電子微組件，等），該等層接 著被堆疊至最終基板上，該最終基板本身可包括組件。主 要由於存在於同一層上之微組件之極小的大小及很大的數 目，必須以很大的準確度將每一經轉印層定位於最終基板 上以獲得與下伏層之成功的、極其嚴格之對準。另外可 能有必要在層已經轉印之後對該層進行處理（例如）以便形 成其他微組件、曝露表面上之微組件、產生互連，等。 【先前技術】 然而，申請者已觀測到，在轉印之後，由於在接合之後 晶圓中出現不均勻變形’有時極其難以（即使並非不可能） 形成與在轉印之前形成之微組件對準的額外微組件。 尤其是對於3D整合，由於直接晶圓接合而產生之不均句 變形接著導致各層之微組件之未對準現象。該未對準現象 (亦稱為覆疊」j_下文中參考圖W行描述）以（例如）約為 ⑽[奈米]之缺陷的形式出現，2〇nm實質上小於在直接 接合時對準晶圓之準確度。 圖1說明藉由第一晶圓或初始基板51〇與第二晶圓或最終 162515.doc 201243979 基板520之間的低壓力直接晶圓接合而獲得之三維結構 500，微組件511至5 19之第一系列係藉由光微影形成於該 第一晶圓或初始基板510上，該光微影主要由在預定區域 處照射基板組成，該等預定區域對應於待形成微組件之位 置’已使該基板為感光的（例如，藉由將感光樹脂塗覆至 該基板）。在接合之後已薄化初始基板51〇以便移除存在於 微組件511至519之層上方的材料之一部分，且微組件521 至529之第二層已形成於初始基板51〇之曝露表面處。 通常藉由選擇性照射設備（通常稱為步進器）來照射該基 板’該選擇性照射設備在照射操作期間起作用，且與一般 照射设備形成對照’該選擇性照射設備經由一由不透明及 透明區域構成之遮罩僅僅照射該基板之一部分或「區」， 該等不透明及透明區域可用以界定待再生於基板上之圖案 (motif)。一個「區」涵蓋個別組件（晶片）之一集合，且因 此不可能（出於生產力原因，亦不需要）最佳化且補償每一 組件之對準缺陷。 步進器通常能夠藉由使用補償演算法來補償某些類型之 對準缺陷，諸如，偏移（或位移）類型之對準缺陷或旋轉及 徑向類型（亦稱為偏轉（run_out)，對應於隨著基板之半徑而 線性地增大之徑向變形）之對準缺陷。 然而，即使當使用該等定位工具時，在微組件511至519 之一些與組件521至529中之一些之間仍發生偏移，諸如， 在圖1中所指示之偏移…】、△“、An、△〇(分別對應於在微 組件對 511/521、512/522、513/523 及 514/524 之間所觀測 1625I5.doc 201243979 到之偏移）。 該等偏移並非由於基本轉變（平移、旋轉或以上各者之 組合）而產生’該等基本轉變可由基板之不準確組裝引 起。該等偏移係由於不均勻變形而產生，該不均勻變形導 致在某些微組件5 11至5 19處之局部、不均勻移動。另外， 在轉印之後形成於基板之曝露表面上的微組件521至529中 之一些展現出相對於該等微組件511至519之位置變化，該 等位置變化可為約幾百奈米，或甚至一微米。 微組件之兩層之間的該未對準現象（亦稱為覆疊）可導致 短路、導致堆疊之變形，或導致該兩層之微組件之間的連 接故障。因此，當經轉印之微組件為由像素構成之成像器 件時，且當轉印後處理步驟意欲在彼等像素中每一者上形 成彩色慮光片時’已在彼等像素中之一些上觀測到著色功 能之損失。 彼覆疊現象因此導致製成之多層半導體晶圓之品質及值 的減少。由於對增加微組件之小型化及增加每層之微組件 之整合密度的持續需求’該現象之影響正變得愈來愈關 鍵。 如圖2A中所說明，對於直接晶圓接合而言，使用接合設 備1〇〇 ’該接合設備100包含具有一支撐壓板121(亦稱為 「夾盤」）之一基板載體器件或晶圓載體12〇，待與第二晶 圓70接合之第一平坦晶圓6〇擱在該支撐壓板1 2丨上，該第 二晶圓70主要歸因於形成於其上之微組件而具有初始曲率 (亦稱為「弓弧」）^將第二晶圓7〇置放於第一晶圓6〇上以 162515.doc 201243979 用於直接晶圓接合。 一旦（例如）藉由靜電系統或藉由吸力將第二 於固持於炎盤121上之第-晶圓60上，便修改第二晶= 之初始曲率，此係因為第二晶圓7〇係僅經由實質上位於其 中心處之有限區域擱在第一晶圓上。更精確而言，施加至 第二晶圓之力取決於第二晶圓之各部分是否與第一晶圓接 觸而為不均句的。事實上’在第二晶圓70之與第一晶圓6〇 接觸的區域中，施加於第二晶圓上之重力吸引力Fg係由藉 由第一晶圓施加之反作用力R補償（Fg+R=〇)。相反，施加 於第二晶圓70之不與第一晶圓6〇接觸之整個部分上的吸引 力未得到補償，且因而第二晶圓之該部分在其自身重量之 作用下變形，施加於該晶圓上之變形力在其側部附近較高 (懸臂效應）。換5之’第二晶圆在晶圓之中心處的變形不 等同於在其側部處之變形。 第二晶圓70之弓狐與施加於第二晶圓7〇上之重力之間的 相互作用（除其他因素外）促成了覆叠類型未對準現象之出 現。 圖3表不在考慮或不考慮如以上所解釋施加於第二晶圓 上之吸引力時第二晶圓7〇的弓弧之模型及在第二晶圓7〇接 〇至第明圓60之後（亦即，在起始該等兩個晶圓之間的 接合波之傳播之後）所得之結構的弓弧之模型。 _曲線A展示第二晶圓7G在其在接合之前（如圖2a中所展 丁）的位置中所展現之弓弧。應觀測到，在重力之作用 下第BB圓之弓孤的幅度減少至18㈣[微米](晶圓之側 162515.doc -6 - 201243979 部的下垂）。 曲線B展示在考慮施加於第二晶圓7〇上之重力之作用（如 圖2A中)的情況下由於晶圓60與7〇之間的接合而產生之結 構所展現之弓弧的幅度及形狀。可見，該結構之形狀並非 二次的’亦即，不形成雙曲線，丨弓弧之幅度僅為5㈣。 相反，若自模型化計算移除重力之作用，則獲得曲線 C，其展不在接合之後所得的結構確實具有二次弓狐（在此 具體而言為雙曲線之形狀）及約為19 μπι之較大幅度。 具有藉由曲線Β說明之弓弧之所得結構所展現的非線性 變形係由於施加於第二晶圓上之吸引力及反作用力之均勻 性的缺乏而引起、然而’為了獲得覆疊中之可靠連接，晶 圓之變形必須相對於晶圓之半徑為線性的或偽線性的。如 圖4中所指不’當曲率隨著晶圓之半徑而變化時，儘管有 由步進器所供應之校正，在晶圓之側部處仍存在明顯之位 置誤差。步進器不能夠校正由於在接合之前施加於第二晶 圓上之吸引力及反作用力之間均勻性的缺乏而誘發之覆疊 類型。 【發明内容】 本發明之目標在於提供—解決方案，此意謂兩個晶圓可 藉由直接接合而支撐及接合在_起，該解決方案消除了在 -亥兩個晶圓中之至少-者上之吸引力及反作用力之均勻性 的缺乏’ 1因此使在所得結構中誘發之覆疊現象最小化。 為此目的，本發明提議一種用於將為圓形之至少第一晶 圓及第二晶圓接合在-起的裝置，該第二晶圓具有-初始 J62515.doc 201243979 弓弧’該裝置包含用於收納至少該第二晶圓之環形支撐構 件’該環形支撐構件界定一中心凹口，在該中心凹口中， 在起始該第-晶圓與該第二晶圓之間的一接合波的傳播之 時刻’該第二晶圓在其自身重量的作用下自由變形。 因此，藉由允許具有一初始弓弧之晶圓在其自身重量下 自由地變形，本發明之接合裝置可用以緊接在接合之前 (亦即，在起始該兩個晶圓之間的接合波之傳播之時刻）給 予該晶圓-恆定弓张、。自由地變形之該晶圓在其側部處不 具有下垂，而在如以上所描述使用先前技術夾盤時在存在 不均勻反作用力的情況下該晶圓將具有下垂。晶圓以及由 於接合所產生之結構之該（等）變形因此沿晶圓之半徑為線 性的。可接著藉由定位工具校正任何偏移或對準缺陷。 尤其是對於3D整合，此情形極大地減少了在微組件之額 外層的後續形成期間或當將兩個晶圓接合在一起時（每一 晶圓包括意欲對準之微組件）在晶圓之側部處之未對準或 覆疊風險。 在本發明之一實施例中，該接合裝置包括用於收納至少 該第二晶圓之一環形支樓件》 在另一實施例中’該接合裝置包括用於收納至少該第二 晶圓之至少三個支撐元件，該等支撐元件均勻地分散於一 環形區域上。 在本發明之一實施例中’該接合裝置進一步包括用於固 持該第一晶圓之一夾盤，該夾盤經置放在該環形支撐構件 下方。該裝置可接著包括用於使該環形支撐構件及該夾盤 162515.doc 201243979 相對於彼此垂直地移動的構件 在本發明之一態樣中，該接合贳 裒置包括用於以機械方式 將一壓力點施加至該兩個晶圓十之一者之一構件。 在本發明之另—態樣中，該裝置包括詩減少該兩個晶 圓之間的壓力之構件。 本發明亦提供-種在為圓形之至少__第—晶圓及_第二 晶圓之間的直接晶圓接合方法，該第二晶圓具有—初始： 弧’該方法包含以下步驟： •在重力下在該第二晶圓之環形側部附近將該第二晶圓 固持於一預定高度，以使得該第二晶圓可在其自身重量的 作用下自由地變形； •使該第二晶圓與該第一晶圓接觸；及 •當該第二晶圓在其自身重量的作用下變形時起始該 兩個晶圓之間的一接合波之傳播。 在本發明之一實施中，將該第一晶圓固持於一夾盤上， 而將該第二晶圓置放於環形支撐構件上’該環形支撲構件 可特定而言由具有一中心凹口之一環形支撐件或多個固持 銷構成’在使該等晶圓接觸之前，將該環形支撐構件固持 於距該夹盤一預定高度處，以便允許該第二晶圓在該中心 凹口中在其自身重量下自由地變形。 在本發明之另一實施中，將該第一晶圓及該第二晶圓置 玫於包括一中心凹口之環形支撐構件上，該環形支撐構件 包括具有一預定高度之一基座，以便允許該第一晶圓及該 第二晶圓在該中心凹口中在其自身重量下自由地變形。 162515.doc 201243979 在本發明之一態樣中’以機械方式將一壓力點施加至該 兩個晶圓中之一者以起始該兩個晶圓之間的一接合波之傳 播。 在本發明之另一態樣中，減少該兩個晶圓之間的壓力以 起始該兩個晶圓之間的一接合波之傳播。 【實施方式】 本發明之另外特性及優點自本發明之特定實施例之以下 描述變得顯而易見’該描述係藉由非限制性實例給出且參 考隨附圖式進行。 本發明通常適用於至少包含第一基板或晶圓至第二基板 或晶圓上之直接晶圓接合之複雜結構的產生。 直接晶圓接合為本身已熟知之技術。應回想起直接晶圓 接合之原理係基於使兩個表面直接接觸，亦即，在不使用 特定材料（黏著劑、蠟、焊料，等）之情況下接觸。此操作 需要待接合在一起之表面足夠平滑且沒有顆粒或污染物， 且需要將該等表面足夠近地聚集在一起以允許起始接觸， 通常分開小於幾奈米之距離。當此情形發生時，兩個表面 之間的吸引力足夠高以導致直接接合（由待接合之兩個表 面之原子或分子之間的電子相互作用之吸引力（凡得瓦爾 力）之集合所誘發的接合）。 藉由起始-晶圆上之至少一接觸點與另一晶圓親密接觸 以便觸發接合波自該接觸點之傳播而進行直接接合。術語 「接合波」在此適用於接合或直接接合前沿，該前沿自起 始點開始傳播且對應於吸引力（凡得瓦爾力）自接觸點在兩 1625I5.doc -10· 201243979 個晶圓之間的整個親密接觸表面（接合界面）上的擴散。可 通常藉由在兩個晶圓中之一者之曝露表面上施加機械壓力 而起始該接觸點。 如以上所指示，藉由將第一晶圓置放於晶圓載體器件之 夾盤上且將第二晶圓置放於該第一晶圓上而進行接合。然 而’由於由第二晶圓所展現之弓弧，該晶圓之僅一部分 (通常位於該晶圓之中心處）擱在第一晶圓上。若重力（或更 精確而5為重力吸引力（attractive gravitational force))以相 同方式施加於整個第二晶圓上，則該重力僅在第二晶圓之 掷在第一晶圓上之部分中由夾盤之反作用力補償。因此， 施加於第二晶圓之未搁在第一晶圓上之部分上的重力未得 到補償，且該部分經受吸引力，該吸引力在該晶圓之該部 分中導致局部變形，從而以非線性方式修改晶圓之總弓 弧。換言之，第二晶圓在其中心與其周邊之間變形，但並 非以均勻方式變形。 為了克服此缺點，本發明提議接合裝置及相關聯之接合 方法其中至少意欲被置放於第一晶圓上之整個第二晶圓 能夠在起始接合波的傳播之時刻在其自身重量下自由地變 形。為此，本發明提議使用可僅在第二晶圓之側部附近支 撐第一晶圓的支撐構件，以允許第二晶圓在其自身重量的 作用下變形且維持其在起始第—晶圓與第二晶圓之間的接 口波的傳播之時刻在其自身重量下的自由變形中。 圖5表示根據本發明之第一實施例的接合裝置200。接合 裝置200包含一第—晶圓載體器件21〇，該第一晶圓載體器 162515.doc •11- 201243979 件210具備由一環形支撐件211形成之環形晶圓支撐構件β 在此處所描述之實例中，環形支撐件211在其上部分中具 有一環形接觸表面2110，該環形接觸表面2110意欲藉由為 圓形之晶圓之位於其側部附近之部分來支撐該晶圓。環形 支撐件211的内直徑Dint(接觸表面2110自内直徑Dint延伸）小 於意欲置放於環形支撐件211上之晶圓的直徑。藉由實 例’對於200 mm [毫米]、300 mm或300 mm以上（例如， 450 mm)之直徑而言，環形支撐件211之内直徑Dint經選擇 以使得被支撐晶圓之側部以一寬度覆疊接觸表面211〇上之 一環形區域’該寬度在1 mm至50 mm之範圍中、較佳在2 mm至10 mm之範圍中且更佳為3 mm。 環形支撐件之外直徑Dext可視情況大於晶圓之直徑。在 此處所描述之實例中，環形支撐件211包含一環形壁 2112’該環形壁2112在接觸表面2110上方自外直徑Dext延 伸0 本發明之環形支撐件之尺寸係根據待接合之晶圓之直徑 而調適’該等待接合之晶圓可特定而言具有1〇〇 mm、15〇 mm、200 mm、300 mm及 450 mm之直徑。 環形支撐件具有一中心凹口 2111，在該中心凹口 2111中 晶圓可在其自身重量下變形。在以上所描述之實例中，環 形元件211具有高度&丨丨，該高度H2n小於晶圓在該凹口中 所變形的距離，此係為了隨後能夠在與另一晶圓形成接觸 時將該晶圓固持於在其自身重量下自由變形的位置中以達 成直接晶圓接合之目的（如以下所描述 162515.doc •12· 201243979 為了最初允許晶圓在其自身重量下自由地變形，將環形 支撐件211安裝於垂直移動構件（在此為活塞212)上，此竟 謂環形支樓件可遠離或靠近意欲固持另一晶圓的夾盤2二 而移動，以達成執行直接晶圓接合之目的。 另外，為了允許環形支樓件211縮回（允許將第一晶圓置 放於爽盤220上’且亦允許封閉待接合在一起之兩個晶圓 之間的接合界面，如以下所描述），此實例中之環形支樓 件211係由四個獨立扇區2114至211 7形成，每一獨立扇區 與各別活塞212整合在一起。每一活塞212安裝於夾盤22〇 内部，在一線性致動器（圖5中未展示）上，該線性致動器可 使扇區2114至2117在由圖5中之箭頭所指示之方向上遠離 彼此而移動。 參考圖6Α至圖6F及圖7，接下來為根據本發明之接合方 法之貫施的藉由圖5之接合裝置進行的第一晶圓2〇與第 一晶圓30之間的直接晶圓接合方法之一實例的描述。以已 知方式，已製備（藉由拋光、清洗、疏水/親水處理，等）用 於接合之分別屬於晶圓2〇及30之表面21及31以允許直接接 合0 接合裝置200(更精確而言，晶圓载體器件21〇及夾盤 220)係置放於壓力及溫度可受控制之密封腔室（在圖至 圖6Ε中未展示）中。 在圖6Α中，使環形支撐件211之扇區2114至2117遠離彼 此而移動以允許將為平坦形狀之第一晶圓或基板2〇置放於 夾盤220上（步驟S1)。夾盤22〇具有較佳小於15微米之平坦 1625I5.doc -13- 201243979 度缺陷。夾盤220(例如）使用與夹盤相關聯之靜電系統或吸 力系統或直接在重力下固持第一晶圓2〇，以達成藉由直接 接合將第一晶圓20與第二晶圓30組裝在一起之目的。倘若 已證實用於固持晶圓之相關聯系統（靜電的，或藉由吸力） 不會使晶圓變形，則使用該等相關聯系統’以便避免增加 關於覆疊之任何問題。 一旦第一晶圓20在夾盤220上處於適當位置中，便使扇 區2114至2117—起移動至圖5中所說明之位置中。將具有 初始弓弧之第二晶圓30置放於接合裝置2〇〇之晶圓載體器 件2 10之環形支撐件211上（圖6B中之步驟82)，該環形支撐 件211定位於活塞212上。在該方法之此步驟中環形支撐 件211係由活塞212固持在距夾盤220之高度Hdef處，以便允 許第二晶圓30在中心凹口 2111中在其自身重量下自由地變 形而不與第一晶圓20形成接觸（步驟S3，圖6c)。 在不使用諸如靜電或吸力系統之相關聯@持系統的情況 下直接將第二晶圓30置放於環形支撐件211之接觸表面 2110上，以便允許該晶圓自由地變形而不藉由該晶圓與環 形支撐件211之接觸表面211〇的之接觸部分來固持該晶 圓。環形支樓件21!之内側2113可經調適（例如，倒角）以便 避免在晶圓之變形期間對晶圓之任何損害。 接著致動活塞2!2以便將環形支撐件211降低至距夹盤 220之咼度札咖處，此意謂可將第二晶圓3〇之下表面31之 一部分置放成與第一晶圓20之上表面21接觸（步驟s4，圖 6D)。接合裝置200包括量測構件（圖6〇中未展示），例如光 162515.doc 14 201243979 學構件，其可調整高度！^…以使得第二晶圓3〇之最靠近第 一晶圓20之部分經定位成最靠近晶圓2〇之面21，而晶圓3〇 並不完全财晶BJ2G上。換言之，高度^必須經調整以 允許兩個晶圓之形成接觸之部分之間的接合波之起始，而 第一晶圓仍在其自身重量的作用下在其自由變形位置中。 在使該等晶圓接觸之步驟之後，進行直接晶圓接合（圖 6E ’步驟S5)。如圖6E中所說日月，接合波之傳播可藉由工 具來起始’該工具50配備尖筆51，該尖筆51可以機械 方式將一接觸點施加至晶圓3〇。有利地，但並非必要，可 控制藉由尖筆51施加於晶圓3〇上之機械壓力以便限制在該 接觸點處之變形。如圖㈣所說明，以高度示意性方式， 工具5〇可包含—測力計53。尖筆叫接至測力計53且具有 -自由末端52’藉由該自由末端52將機械壓力施加於晶圓 上，以便起始兩個晶圓2G及3G之間的接觸點。由於已知 工具50與晶圓30之接觸表面積仏的值，有可能藉由控制 由工具施加於晶圓上之負載F而施加一在i Mp•帕斯祠 至33.3 MPa之範圍中的機械麼力(負載，械壓^負載面 積)。藉由以此方式限制在接觸點之起始期間施加至兩個 土板中$者的壓力，在形成接觸之兩個晶圓之整個表面 =上進行直接晶ϋ接合時，在晶圓中造成^均勻變形之 量，以減少。藉由測力計53控制由末端52施加於晶圓避 負載元件（且更特定而言， 接觸之末端）可由諸如Teflon® 負載7G件之意欲與晶圓形成 、聚矽氧或聚合物之材料產 162515.doc 201243979 生或以該材料覆蓋。一般而言，負載元件之末端係由足夠 硬以致能夠以可受控制方式施加壓力之材料產生或以該材 料覆蓋。過度可撓之材料可變形且產生不準確之接觸表面 積’且因此產生所施加壓力之準確度的損失。另外，過硬 之材料可導致晶圓表面上之缺陷（壓痕）的形成。 亦可藉由將接合裝置之腔室中的壓力減少至極低值（通 常小於約10 mbar[毫巴])而自發地在晶圓20及30之間起始 接合波之傳播。 一旦已起始接合波之傳播，且較佳當接合波臨時由用於 第二晶圓30之側支撐件停止時儘可能晚地，藉由使扇區 2114至2117遠離彼此而移動而自環形支撐件211釋放第二 晶圓30，以便完全封閉晶圓2〇與30之間的接合界面（步驟 S6 ，圖 6F)。 圖8A說明本發明之接合裝置的變型。接合裝置3 〇〇與以 上所描述之接合裝置200不同之處在於，接合裝置3〇〇包含 一固疋之環形支禮件’待接合之兩個晶圓係置放於該固定 之環形支撐件上。更精確而言，此實例中之接合裝置3〇〇 包含一晶圓載體器件310 ’該晶圓載體器件310具備搁在一 基座320上之一環形支撐件311(如同以上所描述之支樓件 211)’該環形支撐件311在其上部分中具有一環形接觸表 面3110 ’該環形接觸表面311〇用於經由為圓形之晶圓之位 於其側部附近之區域來支撐該晶圓。環形支撐件3丨丨的内 直徑Dint(接觸表面3110自内直徑Dint延伸）小於意欲置放於 環形支撐件3 11上之晶圓的直徑。環形支撐件之外直徑〇 ext 162515.doc -16· 201243979 可視情況大於晶圓之直徑。在此處所描述之實例中，環形 支撐件311包含一環形壁3112，該環形壁3112在接觸表面 3110上方自外直徑Dext延伸。 環形支撐件3 11之下部分以一環形基座3114延伸，該環 形基座3114用以界定高度為Hsu之中心凹口 3111，該高度 &〗！大於該（等）晶圓所變形之距離。換言之，環形支撐件 3Π之接觸表面3110被固持於距基座320之足夠距離處，以 允許該（等）晶圓在中心凹口 3111中自由地變形而不與基座 320接觸。環形支撐件311之在内直徑Dinti側部上的側部 3 113之形狀可經調適（例如，倒角）以便避免在晶圓之變形 期間對晶圓之損害。 接合裝置300(更精確而言，包含環形支撐件311之晶圓 載體器件310)係置放於壓力及溫度可受控制之密封腔室（在 圖8A至圖8C中未展示）中。 以下參考圖8A至圖8C及圖9描述藉由接合裝置3〇〇進行 的第一晶圓80與第二晶圓90之間的直接晶圓接合方法的一 實例，圖9描述本發明之接合方法之一實施。 在圖8A中，將第二晶圓9〇置放於第一晶圓8〇上其中第 一晶圓80之側部僅僅藉由重力（亦即，在不使用諸如吸力 或相關聯靜電系統之固持系統的情況下）搁在環形支撐件 311之接觸表面3110上（步驟sl〇)。 -旦已將第二晶圓9〇置放於第一晶圓8〇上，兩個晶圓便 在其自身重量下在中心凹α3111中自由地變形（步驟S2〇， 圖 8B) 〇 162515.doc 17· 201243979 在使各別晶圓80及90之面81及91接觸之步驟之後，藉由 起始面81與91之間的接合波之傳播而進行直接晶圓接合 (圖8C’步驟S30)’可使用工具150進行接合波之傳播，該 工具150配備尖筆151，該尖筆151可用來以機械方式將一 接觸點施加至晶圓9〇，其施加方式與以上關於尖筆5〇所描 述之方式相同。 亦可藉由將接合裝置之腔室中的壓力減少至極低值（通 常小於約10 mbar)而自發地在晶圓8〇與9〇之間起始接合波 之傳播。 圖10展示本發明之接合裝置之另一變型實施例，其與圆 5之接合裝置不同之處在於，接合裝置4〇〇包含由複數個獨201243979 VI. INSTRUCTIONS OF THE INVENTION: FIELD OF THE INVENTION The present invention relates to direct wafer bonding between, for example, two wafers used to create a multilayer semiconductor wafer, such as a direct wafer bonding system (eg, ) Used in 3D integration techniques where one or more layers of microcomponents need to be transferred to the final support substrate, and used in circuit transfer or in the manufacture of backlight imaging devices. The (identical) transferred layer includes micro-components (electronic micro-components, optoelectronic micro-components, etc.) at least partially produced on the initial substrate, the layers being then stacked onto a final substrate, which may itself include Component. Mainly due to the extremely small size and large number of micro-components present on the same layer, each transfer layer must be positioned on the final substrate with great accuracy to achieve a successful and extremely strict with the underlying layer. Alignment. It may also be necessary to treat the layer after the layer has been transferred, for example, to form other microcomponents, expose microcomponents on the surface, create interconnects, and the like. [Prior Art] However, the Applicant has observed that after transfer, uneven deformation occurs in the wafer after bonding. It is sometimes extremely difficult, if not impossible, to form a pair of micro-components formed before transfer. Quasi-extra micro components. Especially for 3D integration, the variation of the unevenness due to direct wafer bonding leads to misalignment of the micro-components of the layers. The misalignment phenomenon (also referred to as "overlap" j_ is described below with reference to Figure W) occurs in the form of, for example, a defect of about (10) [nano], which is substantially smaller than when directly bonded. The accuracy of the quasi-wafer. 1 illustrates a three-dimensional structure 500 obtained by low-pressure direct wafer bonding between a first wafer or initial substrate 51 and a second wafer or a final 162515.doc 201243979 substrate 520, micro-components 511 through 519 The first series is formed on the first wafer or initial substrate 510 by photolithography, the light lithography mainly consisting of illuminating the substrate at a predetermined area corresponding to the position of the micro component to be formed The substrate is made photosensitive (for example, by applying a photosensitive resin to the substrate). The initial substrate 51 is thinned after bonding to remove a portion of the material present over the layers of the micro-components 511 to 519, and the second layer of the micro-components 521 to 529 has been formed at the exposed surface of the initial substrate 51. The substrate is typically illuminated by a selective illumination device (commonly referred to as a stepper) that acts during the illumination operation and is in contrast to a general illumination device that passes through an opaque The mask formed by the transparent region illuminates only a portion or "region" of the substrate, and the opaque and transparent regions can be used to define a motif to be reproduced on the substrate. A "zone" covers a collection of individual components (wafers) and is therefore impossible (and not necessary for productivity reasons) to optimize and compensate for alignment defects in each component. Steppers are typically able to compensate for certain types of alignment defects by using compensation algorithms, such as offset (or displacement) type alignment defects or rotation and radial types (also known as deflection (run_out), corresponding Alignment defects in the radial deformation that increases linearly with the radius of the substrate. However, even when such positioning tools are used, an offset occurs between some of the components 511 through 519 and some of the components 521 through 529, such as the offset indicated in Figure 1], Δ" , An, △ 〇 (corresponding to the offset of 1625I5.doc 201243979 observed between the micro component pairs 511/521, 512/522, 513/523 and 514/524). The offsets are not due to the basic transformation. (translation, rotation, or a combination of the above) produces 'the basic transformations can be caused by inaccurate assembly of the substrate. The offsets are due to uneven deformation that results in certain micro-components 5 11 to Partial, uneven movement at position 19. Further, some of the micro-components 521 to 529 formed on the exposed surface of the substrate after transfer exhibit positional changes with respect to the micro-components 511 to 519, such positions The variation can be on the order of a few hundred nanometers, or even a micron. The misalignment between the two layers of the microcomponent (also known as the overlay) can cause a short circuit, cause deformation of the stack, or cause the two layers to be Connection failure between components. Thus, when the transferred micro-component is an imaging device composed of pixels, and when the post-transfer processing step is intended to form a color filter on each of the pixels, 'some of these pixels are already present. The loss of coloring function is observed. The overlying phenomenon thus leads to a reduction in the quality and value of the fabricated multilayer semiconductor wafers due to the continued need to increase the miniaturization of micro-components and increase the integration density of micro-modules per layer. The effect of this phenomenon is becoming more and more critical. As illustrated in Figure 2A, for direct wafer bonding, the bonding apparatus 100 is used. The bonding apparatus 100 includes a support platen 121 (also referred to as a "clip". a substrate carrier device or a wafer carrier 12, wherein a first flat wafer 6 to be bonded to the second wafer 70 is placed on the support plate 12, the second wafer 70 is mainly attributed The initial curvature (also referred to as "bow arc") is formed on the micro-component formed thereon. The second wafer 7 is placed on the first wafer 6 以 162515.doc 201243979 for direct wafer bonding . Once the second wafer is held on the first wafer 60 by, for example, an electrostatic system or by suction, the initial curvature of the second crystal is modified, because the second wafer 7 is The first wafer is placed on only a limited area substantially at its center. More precisely, the force applied to the second wafer is non-uniform depending on whether portions of the second wafer are in contact with the first wafer. In fact, in the region of the second wafer 70 that is in contact with the first wafer 6A, the gravity attractive force Fg applied to the second wafer is compensated by the reaction force R applied by the first wafer (Fg +R=〇). In contrast, the attractive force applied to the entire portion of the second wafer 70 that is not in contact with the first wafer 6 is not compensated, and thus the portion of the second wafer is deformed by its own weight, applied to The deforming force on the wafer is higher near its sides (cantilever effect). The deformation of the second wafer at the center of the wafer is not equivalent to the deformation at the side thereof. The interaction between the bow fox of the second wafer 70 and the gravitational force applied to the second wafer 7 (among other factors) contributes to the occurrence of overlay type misalignment. 3 shows that the model of the arc of the second wafer 7〇 is not considered or considered when the attractive force applied to the second wafer as explained above is applied and after the second wafer 7 is connected to the bright circle 60 (i.e., after the propagation of the bonding wave between the two wafers is initiated) a model of the arc of the resulting structure. The curve A shows the bow arc exhibited by the second wafer 7G in its position before joining (as shown in Fig. 2a). It should be observed that under the action of gravity, the amplitude of the BB round bow is reduced to 18 (four) [micron] (the side of the wafer is 162515.doc -6 - 201243979). Curve B shows the magnitude of the bow arc exhibited by the structure resulting from the bonding between wafers 60 and 7〇 in consideration of the effect of gravity applied to the second wafer 7 (as in FIG. 2A). shape. It can be seen that the shape of the structure is not quadratic, that is, no hyperbola is formed, and the amplitude of the arch arc is only 5 (four). Conversely, if the effect of gravity is removed from the modeled calculation, the curve C is obtained, and the resulting structure does not have a secondary bow fox (in this case, a hyperbolic shape) and is about 19 μm. Larger. The resulting nonlinear deformation exhibited by the resulting structure with the bow arc illustrated by the curve 引起 is caused by the lack of uniformity of the attractive force and reaction force applied to the second wafer, but 'to obtain reliable in the overlay For the connection, the deformation of the wafer must be linear or pseudo-linear with respect to the radius of the wafer. As indicated in Figure 4, when the curvature varies with the radius of the wafer, there is still a significant position error at the side of the wafer despite the corrections supplied by the stepper. The stepper is not capable of correcting the type of overlay induced by the lack of uniformity between the attractive force and the reaction force applied to the second crystal prior to joining. SUMMARY OF THE INVENTION The object of the present invention is to provide a solution, which means that two wafers can be supported and bonded by direct bonding, and the solution eliminates at least two of the two wafers. The lack of attraction and uniformity of the reaction force '1 thus minimizes the induced aliasing in the resulting structure. To this end, the present invention proposes a device for bonding at least a first wafer and a second wafer in a circular shape, the second wafer having - an initial J62515.doc 201243979 bow arc' An annular support member for receiving at least the second wafer defines a central recess in which a bonding wave between the first wafer and the second wafer is initiated The moment of propagation 'The second wafer is free to deform under its own weight. Thus, by allowing a wafer having an initial bow to be freely deformed under its own weight, the bonding apparatus of the present invention can be used immediately prior to bonding (i.e., at the beginning of the bonding between the two wafers) At the moment of the wave propagation, the wafer is given a constant bow. The wafer that is freely deformed does not have a sag at its sides, and the wafer will have a sag in the presence of a non-uniform reaction force when the prior art chuck is used as described above. This (etc.) deformation of the wafer and the structure resulting from the bond is thus linear along the radius of the wafer. Any offset or alignment defects can then be corrected by the positioning tool. Especially for 3D integration, this situation greatly reduces the subsequent formation of additional layers of micro-components or when bonding two wafers together (each wafer includes micro-components intended to be aligned) on the wafer Risk of misalignment or overlap at the side. In an embodiment of the invention, the bonding device includes an annular branch member for housing at least the second wafer. In another embodiment, the bonding device includes at least the second wafer. At least three support members are evenly dispersed over an annular region. In an embodiment of the invention, the bonding apparatus further includes a chuck for holding the first wafer, the chuck being placed under the annular support member. The apparatus can then include a member for vertically moving the annular support member and the chuck 162515.doc 201243979 relative to each other, the engagement means including for mechanically A pressure point is applied to one of the two wafers. In another aspect of the invention, the apparatus includes means for reducing the pressure between the two crystal circles. The present invention also provides a direct wafer bonding method between at least a __first wafer and a second wafer that is circular, the second wafer having - initial: arc 'the method comprising the following steps: Holding the second wafer at a predetermined height near the annular side of the second wafer under gravity such that the second wafer is free to deform under its own weight; The second wafer is in contact with the first wafer; and • when the second wafer is deformed by its own weight, a propagation of a bonding wave between the two wafers is initiated. In an implementation of the present invention, the first wafer is held on a chuck and the second wafer is placed on the annular support member. The annular baffle member may have a concave portion. One of the annular support members or the plurality of retaining pins constitutes 'holding the annular support member at a predetermined height from the chuck before contacting the wafers to allow the second wafer to be in the central recess Freely deforms under its own weight. In another implementation of the present invention, the first wafer and the second wafer are disposed on an annular support member including a central recess, the annular support member including a base having a predetermined height so that The first wafer and the second wafer are allowed to freely deform in the central recess under their own weight. 162515.doc 201243979 In one aspect of the invention, a pressure point is mechanically applied to one of the two wafers to initiate propagation of a bonding wave between the two wafers. In another aspect of the invention, the pressure between the two wafers is reduced to initiate propagation of a bond wave between the two wafers. Other features and advantages of the present invention will become apparent from the following description of the specific embodiments of the invention. This description is given by way of non-limiting example. The present invention is generally applicable to the generation of complex structures including at least a first substrate or a direct wafer bonding of a wafer to a second substrate or wafer. Direct wafer bonding is a technique that is well known per se. It should be recalled that the principle of direct wafer bonding is based on direct contact between two surfaces, i.e., without the use of specific materials (adhesives, waxes, solders, etc.). This operation requires that the surfaces to be joined together be sufficiently smooth and free of particles or contaminants, and that the surfaces need to be brought together close enough to allow initial contact, usually separated by a distance of less than a few nanometers. When this occurs, the attraction between the two surfaces is high enough to cause direct bonding (the attraction of the electron interaction between the atoms or molecules of the two surfaces to be joined (Van Valli)) Induced engagement). Direct bonding is achieved by intimate contact of at least one contact point on the starting wafer with another wafer to trigger propagation of the bonding wave from the contact point. The term "bonding wave" is used here to apply or directly join the leading edge, which propagates from the starting point and corresponds to the attractive force (vandvar force) from the contact point at two 1625I5.doc -10·201243979 wafers Diffusion across the entire intimate contact surface (joining interface). The contact point can typically be initiated by applying mechanical pressure on the exposed surface of one of the two wafers. As indicated above, the bonding is performed by placing the first wafer on the chuck of the wafer carrier device and placing the second wafer on the first wafer. However, due to the arc of the second wafer, only a portion of the wafer (typically at the center of the wafer) rests on the first wafer. If gravity (or more precisely and 5 attractive gravitational force) is applied to the entire second wafer in the same manner, then the gravity is only in the portion of the second wafer that is thrown on the first wafer. Compensated by the reaction force of the chuck. Therefore, the gravitational force applied to the portion of the second wafer that is not resting on the first wafer is not compensated, and the portion is subjected to attraction, which causes local deformation in the portion of the wafer, thereby The total bow of the wafer is modified in a nonlinear manner. In other words, the second wafer is deformed between its center and its periphery, but is not deformed in a uniform manner. In order to overcome this disadvantage, the present invention proposes a bonding apparatus and associated bonding method in which at least the entire second wafer intended to be placed on the first wafer is free to be under its own weight at the moment of the initial bonding wave propagation. Ground deformation. To this end, the present invention proposes to use a support member that can support the first wafer only near the sides of the second wafer to allow the second wafer to deform under its own weight and maintain its initial crystal The moment of propagation of the interface wave between the circle and the second wafer is in free deformation under its own weight. Figure 5 shows a joining device 200 in accordance with a first embodiment of the present invention. The bonding apparatus 200 includes a first wafer carrier device 21, the first wafer carrier 162515.doc • 11 - 201243979 210 having an annular wafer support member β formed by an annular support 211, as described herein. In the example, the annular support member 211 has an annular contact surface 2110 in its upper portion that is intended to support the wafer by a portion of the wafer that is adjacent to its side. The inner diameter Dint of the annular support 211 (the contact surface 2110 extends from the inner diameter Dint) is smaller than the diameter of the wafer intended to be placed on the annular support 211. By way of example 'for a diameter of 200 mm [mm], 300 mm or more (eg, 450 mm), the inner diameter Dint of the annular support 211 is selected such that the sides of the supported wafer are at a width One of the annular regions on the overlapping contact surface 211' has a width in the range of 1 mm to 50 mm, preferably in the range of 2 mm to 10 mm and more preferably 3 mm. The outer diameter Dext of the annular support may be larger than the diameter of the wafer. In the example described herein, the annular support 211 includes an annular wall 2112' that extends from the outer diameter Dext above the contact surface 2110. The annular support of the present invention is sized according to the diameter of the wafer to be bonded. The adaptation of the wafer to be bonded may specifically have diameters of 1 mm, 15 mm, 200 mm, 300 mm, and 450 mm. The annular support has a central recess 2111 in which the wafer can be deformed under its own weight. In the example described above, the ring member 211 has a height & 丨丨, which is less than the distance the wafer is deformed in the recess, in order to subsequently be able to form the crystal in contact with another wafer. The circle is held in a position that is free to deform under its own weight for direct wafer bonding purposes (as described below) 162515.doc •12· 201243979 In order to initially allow the wafer to freely deform under its own weight, the annular support The piece 211 is mounted on a vertically moving member (here, the piston 212), which means that the annular branch member can be moved away from or close to the chuck 2, which is intended to hold another wafer, for the purpose of performing direct wafer bonding. In addition, in order to allow the annular branch member 211 to be retracted (allowing the first wafer to be placed on the refresher 220) and also to allow the joint interface between the two wafers to be joined together to be closed, as described below The annular leg member 211 in this example is formed by four separate sectors 2114 to 211, each of which is integrated with a respective piston 212. Each piston 212 is mounted inside the chuck 22, On a linear actuator (not shown in Figure 5), the linear actuator can move sectors 2114 through 2117 away from each other in the direction indicated by the arrows in Figure 5. Referring to Figures 6A through 6F And FIG. 7 is an example of an example of direct wafer bonding between the first wafer 2 and the first wafer 30 by the bonding apparatus of FIG. 5 according to the bonding method of the present invention. Description. In a known manner, prepared (by polishing, cleaning, hydrophobic/hydrophilic treatment, etc.) for joining surfaces 21 and 31 of wafers 2 and 30, respectively, to allow direct bonding of 0-joining device 200 (more Precisely, the wafer carrier device 21 and the chuck 220 are placed in a pressure and temperature controllable sealed chamber (not shown in Figures 6 to 6). In Figure 6, the annular support is provided. The sectors 2114 to 2117 of the member 211 are moved away from each other to allow the first wafer or substrate 2, which is in a flat shape, to be placed on the chuck 220 (step S1). The chuck 22 has a preferably less than 15 micrometers. Flat 1625I5.doc -13- 201243979 degree defect. Chuck 220 (for example) is associated with the chuck The electrostatic system or the suction system or the first wafer 2 is directly held under gravity to achieve the purpose of assembling the first wafer 20 and the second wafer 30 by direct bonding. If it has been confirmed to hold the crystal The associated system of the circle (static, or by suction) does not deform the wafer, then use the associated system' to avoid any additional problems with respect to the overlay. Once the first wafer 20 is on the chuck 220 In the proper position, the sectors 2114 to 2117 are moved to the position illustrated in Fig. 5. The second wafer 30 having the initial bow is placed on the wafer carrier device 2 of the bonding device 2 On the annular support member 211 of 10 (step 82 in Fig. 6B), the annular support member 211 is positioned on the piston 212. In this step of the method, the annular support member 211 is held by the piston 212 at a height Hdef from the chuck 220 to allow the second wafer 30 to freely deform under its own weight in the central recess 2111 without The first wafer 20 forms a contact (step S3, Fig. 6c). The second wafer 30 is placed directly on the contact surface 2110 of the annular support 211 without the use of an associated system such as an electrostatic or suction system to allow the wafer to be freely deformed without The contact portion of the wafer with the contact surface 211 of the annular support 211 holds the wafer. The inner side 2113 of the annular leg member 21! can be adapted (e.g., chamfered) to avoid any damage to the wafer during deformation of the wafer. The piston 2! 2 is then actuated to lower the annular support 211 to the side of the chuck 220, which means that a portion of the lower surface 31 of the second wafer 3 can be placed with the first crystal The upper surface 21 of the circle 20 is in contact (step s4, Fig. 6D). Engagement device 200 includes a metrology member (not shown in Figure 6), such as light 162515.doc 14 201243979, which can be adjusted in height! ^... such that the portion of the second wafer 3 closest to the first wafer 20 is positioned closest to the face 21 of the wafer 2, and the wafer 3 is not completely on the BJ2G. In other words, the height ^ must be adjusted to allow the initiation of the bonding wave between the portions of the two wafers that make contact, while the first wafer is still in its freely deformed position under its own weight. After the step of bringing the wafers into contact, direct wafer bonding is performed (Fig. 6E 'step S5). As shown in Fig. 6E, the propagation of the bonding wave can be initiated by a tool. The tool 50 is provided with a stylus 51 which can mechanically apply a contact point to the wafer 3. Advantageously, but not necessarily, the mechanical pressure exerted on the wafer 3 by the stylus 51 can be controlled to limit deformation at the contact point. As illustrated in Figure (4), in a highly schematic manner, the tool 5 can include a dynamometer 53. The stylus is attached to the dynamometer 53 and has a free end 52' to apply mechanical pressure to the wafer by the free end 52 to initiate a contact point between the two wafers 2G and 3G. Since the value of the contact surface area 工具 between the tool 50 and the wafer 30 is known, it is possible to apply a machine in the range of i Mp·Pass to 33.3 MPa by controlling the load F applied to the wafer by the tool. Force (load, mechanical pressure ^ load area). By limiting the pressure applied to the two of the two soil sheets during the beginning of the contact point in this way, direct wafer bonding is performed on the entire surface of the two wafers forming the contact, causing ^ The amount of uniform deformation to reduce. The force applied by the tip 52 to the wafer load-avoiding element (and more specifically, the end of the contact) by the end gauge 52 can be controlled by a material such as a Teflon® loaded 7G piece that is intended to be formed with a wafer, a polyoxygen or a polymer. 162515.doc 201243979 Raw or covered with this material. In general, the ends of the load element are made of or are covered by a material that is sufficiently rigid to be capable of applying pressure in a controlled manner. Excessively flexible materials can deform and create inaccurate contact surface products' and thus the loss of accuracy of the applied pressure. In addition, a hard material can cause the formation of defects (indentations) on the surface of the wafer. Propagation of the bonding wave can also be initiated spontaneously between wafers 20 and 30 by reducing the pressure in the chamber of the bonding device to a very low value (typically less than about 10 mbar [mbar]). Once the propagation of the bonding wave has begun, and preferably when the bonding wave is temporarily stopped by the side support for the second wafer 30, as far as possible, the sectors 2114 to 2117 are moved away from each other by the ring. The support member 211 releases the second wafer 30 to completely close the joint interface between the wafers 2 and 30 (step S6, FIG. 6F). Figure 8A illustrates a variation of the joining device of the present invention. The bonding device 3 is different from the bonding device 200 described above in that the bonding device 3 includes a solid ring-shaped gift member. Two wafers to be joined are placed on the fixed ring support. on. More precisely, the bonding device 3 in this example includes a wafer carrier device 310. The wafer carrier device 310 has an annular support member 311 resting on a pedestal 320 (like the branch described above). 211) 'The annular support 311 has an annular contact surface 3110' in its upper portion for supporting the wafer via a region of the wafer that is adjacent to its side. The inner diameter Dint of the annular support member 3 (the contact surface 3110 extends from the inner diameter Dint) is smaller than the diameter of the wafer intended to be placed on the annular support member 31. The outer diameter of the annular support 〇 ext 162515.doc -16· 201243979 can be larger than the diameter of the wafer. In the example described herein, the annular support 311 includes an annular wall 3112 that extends from the outer diameter Dext above the contact surface 3110. The lower portion of the annular support member 3 11 extends with an annular base 3114 for defining a central recess 3111 having a height Hsu, which height & Greater than the distance the wafer is deformed. In other words, the contact surface 3110 of the annular support member 3 is held at a sufficient distance from the base 320 to allow the wafer to be freely deformed in the central recess 3111 without coming into contact with the base 320. The shape of the side portion 3 113 of the annular support member 311 on the side of the inner diameter Dinti can be adapted (e.g., chamfered) to avoid damage to the wafer during deformation of the wafer. Bonding device 300 (more precisely, wafer carrier device 310 including annular support member 311) is placed in a pressure and temperature controllable sealed chamber (not shown in Figures 8A-8C). An example of a direct wafer bonding method between the first wafer 80 and the second wafer 90 by the bonding apparatus 3A will be described below with reference to FIGS. 8A to 8C and FIG. 9, and FIG. 9 depicts the bonding of the present invention. One of the methods is implemented. In FIG. 8A, the second wafer 9 is placed on the first wafer 8 其中 where the side of the first wafer 80 is only by gravity (ie, without the use of a system such as suction or associated static electricity). In the case of the holding system, it rests on the contact surface 3110 of the annular support 311 (step s1). Once the second wafer 9 已 has been placed on the first wafer 8 ,, the two wafers are freely deformed in the fovea α 3111 under their own weight (step S2 〇, FIG. 8B ) 〇 162515. Doc 17· 201243979 After the step of bringing the faces 81 and 91 of the respective wafers 80 and 90 into contact, direct wafer bonding is performed by the propagation of the bonding wave between the starting faces 81 and 91 (FIG. 8C'Step S30) 'The propagation of the bonding wave can be performed using the tool 150. The tool 150 is provided with a stylus 151 that can be used to mechanically apply a contact point to the wafer 9 〇 in a manner similar to that described above with respect to the stylus 5 The manner described is the same. The propagation of the bonding wave can also be initiated spontaneously between the wafers 8〇 and 9〇 by reducing the pressure in the chamber of the bonding device to a very low value (typically less than about 10 mbar). Figure 10 shows another modified embodiment of the joining device of the present invention, which differs from the engaging device of the circle 5 in that the engaging device 4〇〇 comprises a plurality of individual
’該複數個獨立固 Dint之環形區域ZA'The multiple independent solid Dint ring area ZA
立‘固持銷411至414構成之環形支撐構件， 持銷411至414均勻地安置於具有内直徑D 上，該内直徑Dint小於意欲置放於銷411至414上之該（等An annular support member formed by the holding pins 411 to 414, the holding pins 411 to 414 are evenly disposed on the inner diameter D which is smaller than the one intended to be placed on the pins 411 to 414 (etc.
主4〗4上之晶圓接合之晶圓。The wafer bonded to the wafer on the main 4′′4.
I62515.doc 201243979 夾盤420而移動以達成直接晶圓接合之目的。 另外，為了允許銷411至414縮回（允許將第—晶圓置放 於夾盤420上，且允許如以上參考圖6E及圖6F所描述在起 始接合波的傳播之後封閉待接合在一起之兩個晶圓之間的 接合界面）’銷411至414中之每一者係安裝於失盤42〇内 ’在各別線性致動器（圖1 0中未展示）上，該各別線性致 動器允許該等銷在由圖10中之箭頭所指示之方向上彼此分 開。 如以上參考圖8A至圖8C所描述’當將兩個晶圓支樓於 彼此上以允許該等晶圓在接合之前變形時，將固持銷維持 在一尚度’該高度足以允許該等晶圓在凹口 4111中變形而 不與夾盤420或基座形成接觸，該等銷固定於該基座上。 固持銷之數目在3至50之範圍中，且通常為1〇。 本發明之接合方法適用於組裝與直接接合相容之任何類 型之材料’特定而言為諸如矽、鍺、玻璃、石英、藍寶石 等之半導體材料。待組裝之晶圓可特定而言具有1〇()〇1111、 150 mm、200 mm、300 mm或450 mm之直徑。該等晶圓亦 可在其表面之大部分上或僅在有限區域中包括微組件。 本發明之接合方法的一特定而非排外性領域係藉由在晶 圓或初始基板之表面上形成微組件之第一系列而產生三維 結構的領域，該等微組件有可能為完整組件及/或僅為組 件之部分，且該初始基板有可能為單層結構（例如，矽層） 或多層結構（諸如SOI型結構）。該等微組件係藉由遮罩藉 由光微影形成，該遮罩可用以界定用於對應於待產生之微 162515.doc -19- 201243979 組件之形成圖案的區域。 y在接合之後，亦即’在兩個晶圓孓間的接合波之傳播之 後’在可能已薄化之初始基板之曝露表面處形成微組件之 第二層。第二層之微組件可對應於第-層之微組件的互補 部分’以便形成完成之組件及/或意欲連同第一層之微組 件起作用之相異組件。^了形成與第—層之内埋式微組件 對準的第二層之微組件，利用類似於用以形成微組件之光 微影遮罩的光微影遮罩。 在一變型中，藉由各層之堆疊形成三維結構，每一層係 藉由本發明之組裝方法轉印，且每一層與直接鄰近之層對 準。在又一變型中，最終基板自身亦包括微組件。 由於本發明之直接晶圓接合方法，有可能在沒有非線性 變形或至少該變形有所減少的情況下將初始基板接合至最 終基板，以使得不再觀測到在初始基板至最終基板上之轉 印之前及之後在晶圓之側部處的嚴重未對準。第二層之微 組件（甚至具有極小尺寸（例如，<丨μηι)之彼等微組件）可因 此容易地形成為與第一層之微組件對準，甚至是在初始基 板之轉印之後。此情形可（例如）用以經由金屬連接件互連 存在於兩個層中或存在於同一層之兩個相異面上的微組 件’藉此使不良互連之風險最小化。 因此’本發明之接合方法可用以限制在晶圓之直接接合 期間晶圓之不均勻變形現象。最後，當兩個晶圓皆包括微 組件時’該方法可限制在電路層至另一層上或至支撐基板 上之轉印期間的覆疊現象，且可產生極高品質之多層半導 162515.doc •20· 201243979 體晶圓。 【圖式簡單說明】 •圖⑽示在根據先前技術之直接接合之後的三維結構 之不意圖， •圖2A及圖2B為先前技術接合裝置之戴面圖； 圖3展示在有重力之作用的情況下及無重力之作用的情 況下藉由接合兩個晶圓而獲得之結構之弓弧的模型化； •圖4展不當兩個經接合晶圓具有弓弧之非線性變化時覆 疊之量測的實例； •圖5為根據本發明之一實施例之接合裝置的透視圖； •圖6A至圖6F為根據本發明之一實施的藉由圖5之裝置進 行之直接晶圓接合方法的示意圖； •圖7為圖6A至圖6E中所說明之本發明之直接晶圓接合 方法之步驟的流程圖； •圖8A至圖8C為根據本發明之另—實施的直接晶圓接合 方法的示意圖； •圖9為圖8A至圖8C中所說明之本發明之直接晶圓接合 方法中之步驟的流程圖；及 •圖10為根據本發明之一變型實施例之接合裝置的透視 圖。 【主要元件符號說明】 20 晶圓/第一晶圓或基板/第一晶圓 21 表面/上表面/面 3〇 晶圓/第二晶圓 162515.doc 2! 201243979 31 表面/下表面 50 工具/構件 51 尖筆 52 自由末端/末端 52a 接觸表面積 53 測力計 60 第一平坦晶圓/第一晶圓/晶圓 70 第二晶圓/晶圓 80 第一晶圓/晶圓 81 面 90 第二晶圓/晶圓 91 面 120 基板載體器件或晶圓載體 121 支撐壓板/夾盤 150 工具 151 尖筆 200 接合裝置/裝置 210 第一晶圓載體器件 211 環形支撐件/環形元件/環形支撐構件 212 活塞/構件 220 夹盤 300 接合裝置 310 晶圓載體器件 311 環形支撐件/環形支撐構件 162515.doc -22- 201243979 320 400 411 411a 412 412a 413 413a 414 414a 420 500 510 511 512 513 514 515 516 517 162515.doc 元 基座/夾盤 接合裝置 獨立固持銷/銷/固持銷/環形支撐構件/支撐 件 # 各別接觸表面 獨立固持銷/銷/固持銷/環形支撐構件/支撐元 件 各別接觸表面 獨立固持銷/銷/固持銷/環形支撐構件/支撐元 件 各別接觸表面 獨立固持銷/銷/固持銷/環形支撐構件/支撐元 件 各別接觸表面 夾盤 三維結構 第一晶圓或初始基板 微組件 微組件 微組件 微組件 微組件 微組件 微組件 -23· 201243979 518 微組件 519 微組件 520 第二晶圓或最終基板 521 微組件/組件 522 微組件/組件 523 微組件/組件 524 微組件/組件 525 微組件/組件 526 微組件/組件 527 微組件/組件 528 微組件/組件 529 微組件/組件 2110 環形接觸表面/接觸表面 2111 中心凹口 2112 環形壁 2113 内側 2114 獨立扇區/扇區 2115 獨立扇區/扇區 2116 獨立扇區/扇區 2117 獨立扇區/扇區 3110 環形接觸表面/接觸表面 3111 中心凹口 3112 環形壁 3113 側 3114 環形基座/基座 162515.doc -24-I62515.doc 201243979 The chuck 420 is moved for direct wafer bonding. In addition, in order to allow the pins 411 to 414 to be retracted (allowing the first wafer to be placed on the chuck 420, and allowing the closure to be joined together after the propagation of the initial bonding wave as described above with reference to Figures 6E and 6F The joint interface between the two wafers] 'each of the pins 411 to 414 is mounted in the lost disk 42'' on each of the linear actuators (not shown in FIG. 10), the respective The linear actuator allows the pins to be separated from each other in the direction indicated by the arrows in FIG. As described above with reference to Figures 8A-8C, 'when two wafers are contiguous on each other to allow the wafers to deform prior to bonding, the retention pins are maintained at a level that is sufficient to allow the crystals The circle is deformed in the recess 4111 without making contact with the chuck 420 or the base, the pins being fixed to the base. The number of holding pins is in the range of 3 to 50, and is usually 1 inch. The joining method of the present invention is suitable for assembling any type of material that is compatible with direct bonding, particularly semiconductor materials such as tantalum, niobium, glass, quartz, sapphire, and the like. The wafer to be assembled may specifically have a diameter of 1 〇 () 〇 1111, 150 mm, 200 mm, 300 mm or 450 mm. The wafers may also include microcomponents on most of their surface or only in limited areas. A particular, but not exclusive, field of bonding methods of the present invention is the field of creating a three-dimensional structure by forming a first series of micro-components on the surface of a wafer or initial substrate, which may be a complete component and/or Or only a part of the component, and the initial substrate may be a single layer structure (for example, a germanium layer) or a multilayer structure (such as an SOI type structure). The micro-components are formed by photolithography by a mask that can be used to define a patterned area corresponding to the micro-162515.doc -19-201243979 component to be produced. y After bonding, i.e., after the propagation of the bonding waves between the two wafer turns, a second layer of microcomponents is formed at the exposed surface of the initial substrate that may have been thinned. The second layer of microcomponents may correspond to the complementary portions of the first layer of microcomponents to form a completed component and/or a dissimilar component that is intended to function with the microlayer of the first layer. A second layer of micro-elements that are aligned with the buried micro-components of the first layer are utilized, using a photolithographic mask similar to the photolithographic mask used to form the micro-components. In a variant, a three-dimensional structure is formed by stacking of layers, each layer being transferred by the assembly method of the present invention, and each layer being aligned with a layer immediately adjacent. In yet another variation, the final substrate itself also includes micro-components. Due to the direct wafer bonding method of the present invention, it is possible to bond the initial substrate to the final substrate without nonlinear deformation or at least the reduction of the deformation, so that the rotation from the initial substrate to the final substrate is no longer observed. Severe misalignment at the sides of the wafer before and after printing. The second layer of micro-components (even those having very small dimensions (e.g., <丨μηι)) can thus be easily formed to align with the micro-components of the first layer, even after transfer of the initial substrate. This situation can, for example, be used to interconnect micro-components present in two layers or on two distinct faces of the same layer via metal connectors, thereby minimizing the risk of poor interconnection. Thus, the bonding method of the present invention can be used to limit uneven deformation of the wafer during direct bonding of the wafer. Finally, when both wafers include micro-components, the method can limit the overlying phenomenon during transfer from the circuit layer to another layer or onto the support substrate, and can produce extremely high quality multilayer semi-conductors 162515. Doc •20· 201243979 Body Wafer. BRIEF DESCRIPTION OF THE DRAWINGS: Figure (10) shows a three-dimensional structure after direct bonding according to the prior art. Fig. 2A and Fig. 2B are front views of prior art bonding devices; Fig. 3 shows the effect of gravity The modeling of the arc of the structure obtained by joining the two wafers in the case of no gravity and the effect of the gravity; the amount of overlap in the case where the two bonded wafers have a nonlinear change in the arc of the bow 5 is a perspective view of a bonding apparatus according to an embodiment of the present invention; and FIGS. 6A to 6F are direct wafer bonding methods by the apparatus of FIG. 5 according to an implementation of the present invention. FIG. 7 is a flow chart showing the steps of the direct wafer bonding method of the present invention illustrated in FIGS. 6A to 6E; FIG. 8A to FIG. 8C are diagrams showing a direct wafer bonding method according to another embodiment of the present invention. FIG. 9 is a flow chart showing the steps in the direct wafer bonding method of the present invention illustrated in FIGS. 8A to 8C; and FIG. 10 is a perspective view of the bonding apparatus according to a modified embodiment of the present invention. [Major component symbol description] 20 wafer / first wafer or substrate / first wafer 21 surface / upper surface / surface 3 wafer / second wafer 162515.doc 2! 201243979 31 surface / lower surface 50 tools / Member 51 Tip Pen 52 Free End / End 52a Contact Surface Area 53 Dynamometer 60 First Flat Wafer / First Wafer / Wafer 70 Second Wafer / Wafer 80 First Wafer / Wafer 81 Face 90 Second wafer/wafer 91 face 120 substrate carrier device or wafer carrier 121 support platen/ chuck 150 tool 151 stylus 200 splicing device/device 210 first wafer carrier device 211 annular support/ring element/ring support Member 212 Piston/Component 220 Chuck 300 Engagement Device 310 Wafer Carrier Device 311 Annular Support/Ring Support Member 162515.doc -22- 201243979 320 400 411 411a 412 412a 413 413a 414 414a 420 500 510 511 512 513 514 515 516 517 162515.doc Element base / chuck joint device independent holding pin / pin / holding pin / ring support member / support # Individual contact surface independent holding pin / pin / holding pin / ring support member / support member Contact surface independent holding pin/pin/holding pin/ring support member/support member respective contact surface independent holding pin/pin/holding pin/ring support member/support member respective contact surface chuck three-dimensional structure first wafer or initial Substrate Micro-Components Micro-Components Micro-Components Micro-Components Micro-Components Micro-Components Micro-Components-23· 201243979 518 Micro-Components 519 Micro-Components 520 Second or Final Substrate 521 Micro-Components/Components 522 Micro-Components/Components 523 Micro-Components/Components 524 Micro Component/Component 525 Micro Component/Component 526 Micro Component/Component 527 Micro Component/Component 528 Micro Component/Component 529 Micro Component/Component 2110 Annular Contact Surface/Contact Surface 2111 Center Notch 2112 Ring Wall 2113 Inner 2114 Independent Sector/Fan Zone 2115 Independent Sector/Sector 2116 Independent Sector/Sector 2117 Independent Sector/Sector 3110 Annular Contact Surface/Contact Surface 3111 Center Notch 3112 Ring Wall 3113 Side 3114 Ring Base/Base 162515.doc -24 -