TW201241490A - Film surface treatment method and device - Google Patents

Film surface treatment method and device Download PDF

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Publication number
TW201241490A
TW201241490A TW101106409A TW101106409A TW201241490A TW 201241490 A TW201241490 A TW 201241490A TW 101106409 A TW101106409 A TW 101106409A TW 101106409 A TW101106409 A TW 101106409A TW 201241490 A TW201241490 A TW 201241490A
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Taiwan
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gas
film
nozzle
processing
roller
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TW101106409A
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Chinese (zh)
Inventor
Yoshinori Nakano
Takashi Satoh
Junnosuke Murakami
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Sekisui Chemical Co Ltd
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Publication of TW201241490A publication Critical patent/TW201241490A/en

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3025Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3033Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state in the form of a thin sheet or foil, e.g. Polaroid

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Polymerisation Methods In General (AREA)

Abstract

A film (9) to be treated is supported by a support section (10) of a film surface treatment device (1). A first gas (g1) containing a polymerizable monomer is brought into contact with the film (9) by means of a first treatment section (91). Next, a second gas (g2) containing a discharge product gas is transformed into plasma by means of a second treatment section (92) and the plasma is brought into contact with the film (9). Next, a third gas (g3) containing a polymerizable monomer is brought into contact with the film (9) by means of a third treatment section (93). Next, a fourth gas (g4) containing a discharge product gas is transformed into plasma by means of a fourth treatment section (94) and the plasma is brought into contact with the film (9). An additive component is further added to the third gas (g3) or the fourth gas (g4). The additive component is an oxygen gas, a hydrogen gas, a saturated hydrocarbon gas, an unsaturated hydrocarbon gas, or a crosslinking accelerator agent. In this manner, it becomes possible to improve the adhesion durability of a resin film.

Description

201241490 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種對樹脂製之被處理膜進行表面處理之 方法及裝置,且係關於一種適合於例如提高偏光板之保護 膜的接著耐久性之處理等的膜表面處理方法及裝置。 【先前技術】 例如,於液晶顯示裝置中搭載有偏光板。偏光板包含偏 光膜與保護膜。通常,偏光膜包含以聚乙稀醇(pVA, poly vinyl alcohol)為主要成分而包含之樹脂膜(以下稱為 「PVA膜」)構成。保護膜包含以三乙醯纖維素(TAC, triacetate cellulose)為主要成分而包含之樹脂膜(以下稱為 「TAC膜」)構成。作為接著該等膜之接著劑,使用聚乙烯 醇系或聚喊系等水系接著劑。PVA膜與上述接著劑之接著 性良好’但TAC膜之接著性不佳。因此,專利文獻丨、2 中’於上述接著步驟之前,當在保護膜之表面形成聚合性 單體之薄膜後,照射大氣壓電漿。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2009-25604號公報 [專利文獻2]日本專利特開2〇 1〇_150372號公報 【發明内容】 [發明所欲解決之問題] 僅於聚合性單體之電漿聚合處理中,接著耐久性不充 分。特別是於電漿聚合膜為聚丙烯酸等水溶性聚合物之情 I62457.doc 201241490 形時,於高溫、高濕度環境下接著強度容易下降。 [解決問題之技術手段] 為了解決上述課題,本發明方法之特徵在於:其係對樹 脂製之被處理膜之表面進行處理之膜表面處理方法;且包 括如下步驟: 第1處理步驟,其係使含有經氣化之聚合性單體之第1氣 體接觸上述被處理膜; 第2處理步驟,其係於上述第丨處理步驟後或與上述第^ 處理步驟同時地’將含有放電生成氣體之第2氣體電栽化 (包含激發、活化、自由基化、離子化等)並使之接觸上述 被處理膜; 第3處理步驟,其係於上述第2處理步驟之後,使含有經 氣化之聚合性單體之第3氣體接觸上述被處理膜;及、 第4處理步驟,其係於上述第3處理步驟後或與上述第3 處理步驟同時地,將含有放電生成氣體之第4氣體電毁化 並使之接觸上述被處理膜;且 上述第3氣體或上述第4氣體中進而含有添加成分,上述 添加成分為氧氣、氫氣、飽和烴氣體、或不飽和烴氣體、 或交聯促進劑。 藉由第1處理步驟及第2處理步驟,而使由第1氣體中之 聚合性單體電浆聚合而成之糾電漿聚合膜形成於被處理 膜之表面II由第3處理步驟及第4處理步驟,而使上述第 1電聚聚°膜之聚合度提高,並且使由第3氣體中之聚合性 單體電聚聚合而成之第2電聚聚合膜積層形成於上述第。丨電 162457.doc 201241490 漿聚合膜上。認為藉由在上述第3氣體或上述第4氣體中添 加上述添_加成分,可實現第2電漿聚合膜之疏水化或交聯 化(包含高分子量化)’進而認為藉由添加成分而可使電漿 聚合膜對接著劑之反應性(密接性)提高。因此,可提高電 激聚合膜之财水性。特別是即便電漿聚合膜為聚丙稀:等 水溶性聚合物,亦可確實地確保其耐水性。其結果,可提 高被處理膜之接著耐幻生。此冑,所謂㈣耐久性,係指 將接著後之對象物暴露於高濕度^高溫之濕熱環境下後接 著強度不下降之程度。 本發明裝置之特徵在於:其係對樹脂製之被處理膜之表 面進行處理之膜表面處理裝置;且包括: 支持部,其支持上述被處理膜; 第1處理部,其進行使含有經氣化之聚合性單體之第^氣 體接觸上述被處理臈之處理; 第2處理部,其進行將含有放電生成氣體之第2氣體電毁 化並使之接觸被處理膜之處理; 第3處理部,其進行使含有經氣化之聚合性單體之第3氣 體接觸被處理膜之處理; 第4處理部,其進行將含有放電生成氣體之第4氣體電漿 化並使之接觸被處理膜之處理;及 搬送機構,其將上述被處理膜按照上述第丨處理部、上 述第2處理部、上述第3處理部、上述第4處理部之順序進 行搬送;且 上述第3氣體或上述第4氣體中進而含有添加成分,上述 162457.doc -6 · 201241490 添加成分為氧氣 '氫氣、飽和烴氣體、或不飽和烴氣體、 或交聯促進劑。 敗寻不洛性聚合 可提高被處理膜 藉由第1處理部,可於被處理膜之表面形成包含第1氣體 中之聚合性單體之第丨凝縮層。其後,可藉由搬送機構將 被處理膜向第2處理部搬送,並藉由第2處理部而使上述第 1凝縮層電漿聚合,從而於被處理膜之表面形成第〗電漿聚 合膜。其後,可藉由搬送機構將被處理膜向第3處理部搬 送,並藉由第3處理部而於被處理膜之表面形成包含第3氣 體中之聚合性單體之第2凝縮層。或者,可形成包含第3氣 體中之聚合性單體與添加成分之混合物之第2凝縮層。其 後’可藉由搬送機構將被處理膜向第4處理部搬送,並藉 由第4處理部而提高上述第丨電漿聚合膜之聚合度並且使上 述第2凝縮層電漿聚合,從而將第2電漿聚合膜積層於上述 第1電漿聚合膜上。認為藉由在上述第3氣體或上述第4氣 體中添加上述添加成分,可實現第2電漿聚合膜之疏水化 或父聯化,進而s忍為藉由添加成分可使電漿聚合膜對接著 劑之反應性(密接性)提高。因此,可提高電聚聚合膜之耐 水性。特別是即便電漿聚合膜為聚丙烯酸等水溶性聚合201241490 6. TECHNOLOGICAL FIELD OF THE INVENTION The present invention relates to a method and apparatus for surface treating a resin-treated film, and relates to a bonding durability suitable for, for example, a protective film for improving a polarizing plate. A film surface treatment method and apparatus for processing or the like. [Prior Art] For example, a polarizing plate is mounted on a liquid crystal display device. The polarizing plate includes a polarizing film and a protective film. In general, the polarizing film is composed of a resin film (hereinafter referred to as "PVA film") containing polyethylene (polypropylene) as a main component. The protective film is composed of a resin film (hereinafter referred to as "TAC film") containing triacetate cellulose (TAC) as a main component. As an adhesive for the film, a water-based adhesive such as a polyvinyl alcohol-based or a squeaking system is used. The adhesion between the PVA film and the above-mentioned adhesive was good', but the adhesion of the TAC film was not good. Therefore, in the patent documents 丨, 2, before the subsequent steps, a film of a polymerizable monomer is formed on the surface of the protective film, and then the atmospheric piezoelectric slurry is irradiated. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-25604 [Patent Document 2] Japanese Patent Laid-Open Publication No. Hei. No. Hei. Problem] In the plasma polymerization treatment of the polymerizable monomer alone, the durability is insufficient. In particular, when the plasma polymerization film is a water-soluble polymer such as polyacrylic acid, I62457.doc 201241490, the strength is likely to decrease in a high-temperature, high-humidity environment. [Means for Solving the Problems] In order to solve the above problems, the method of the present invention is characterized in that it is a film surface treatment method for treating a surface of a resin-treated film; and includes the following steps: a first processing step The first gas containing the vaporized polymerizable monomer is brought into contact with the film to be treated; and the second treatment step is performed after the second processing step or simultaneously with the second processing step The second gas is electrocatalyzed (including excitation, activation, radicalization, ionization, etc.) and brought into contact with the film to be treated; and the third treatment step is performed after the second treatment step to contain vaporized The third gas of the polymerizable monomer is in contact with the film to be processed; and the fourth processing step is to electrically charge the fourth gas containing the discharge generating gas after the third processing step or simultaneously with the third processing step Destroying and contacting the film to be treated; and the third gas or the fourth gas further contains an additive component, wherein the additive component is oxygen, hydrogen, a saturated hydrocarbon gas, or an unsaturated component A hydrocarbon gas, or a crosslinking accelerator. By the first processing step and the second processing step, the electric correction plasma polymerization film obtained by plasma-polymerizing the polymerizable monomer in the first gas is formed on the surface II of the film to be treated, and the third processing step and the In the fourth step, the degree of polymerization of the first electropolymerized film is increased, and a second electropolymerized film layer obtained by electropolymerizing a polymerizable monomer in the third gas is formed in the above.丨电 162457.doc 201241490 on the slurry polymerization film. It is considered that by adding the above-described addition-addition component to the third gas or the fourth gas, hydrophobization or cross-linking (including polymerization) of the second plasma polymerization film can be realized, and it is considered that the component is added by adding the component. The reactivity (adhesion) of the plasma polymerization film to the adhesive can be improved. Therefore, the fueliness of the electropolymerized film can be improved. In particular, even if the plasma polymerization film is a water-soluble polymer such as polypropylene: it can surely ensure water resistance. As a result, it is possible to improve the subsequent resistance of the film to be processed. Here, the term "fourth" durability refers to the extent to which the subsequent object is exposed to a high humidity, high temperature, hot and humid environment, and then the strength is not lowered. The apparatus of the present invention is characterized in that it is a film surface treatment apparatus for treating a surface of a resin-treated film; and includes: a support portion that supports the film to be processed; and a first processing portion that performs gas-containing gas The second gas of the polymerizable monomer is brought into contact with the treated ruthenium; and the second processing portion is configured to electrically destroy the second gas containing the discharge generating gas and contact the film to be treated; a process of bringing a third gas containing a vaporized polymerizable monomer into contact with the film to be treated, and a fourth processing unit for plasma-treating and contacting the fourth gas containing the discharge generating gas And a transfer mechanism that transports the processed film in the order of the second processing unit, the second processing unit, the third processing unit, and the fourth processing unit; and the third gas or the The fourth gas further contains an additive component, and the 162457.doc -6 · 201241490 additive component is oxygen gas, a saturated hydrocarbon gas, or an unsaturated hydrocarbon gas, or a crosslinking accelerator. The film to be treated is improved. The film to be treated can be formed by forming a first condensed layer containing a polymerizable monomer in the first gas on the surface of the film to be processed by the first treatment unit. Thereafter, the film to be processed is transported to the second processing unit by the transport mechanism, and the first condensation layer is plasma-polymerized by the second treatment unit to form a plasma polymerization on the surface of the film to be treated. membrane. Then, the film to be processed is transported to the third processing unit by the transport mechanism, and the second condensed layer containing the polymerizable monomer in the third gas is formed on the surface of the film to be processed by the third processing unit. Alternatively, a second condensed layer containing a mixture of a polymerizable monomer and an additive component in the third gas may be formed. Thereafter, the film to be processed can be transported to the fourth processing unit by the transfer mechanism, and the degree of polymerization of the second plasma polymerization film can be increased by the fourth treatment unit, and the second condensation layer can be plasma-polymerized. The second plasma polymerization film is laminated on the first plasma polymerization film. It is considered that by adding the above-mentioned additive component to the third gas or the fourth gas, it is possible to achieve hydrophobization or parentalization of the second plasma polymerization film, and further, it is possible to make the plasma polymerization film pair by adding components. The reactivity (adhesiveness) of the subsequent agent is improved. Therefore, the water resistance of the electropolymerized film can be improved. Especially even if the plasma polymerization film is a water-soluble polymerization such as polyacrylic acid

物’亦可確實地確保其耐水性。其結果, 之接著久性D 車乂佳為上述支持部包括相互平行地排列之金屬製之第 1、第2'第3輥,上述被處理膜爐絲於访哲細L 〇 β .The substance can also reliably ensure its water resistance. As a result, it is preferable that the support portion includes the first and second 'third rolls of metal which are arranged in parallel with each other, and the film to be processed is in the line L 〇 β .

I62457.doc 201241490 面而喷出上述第1氣體之第1喷嘴。較佳為上述第2#_ 包括將上述第2氣體喷出至上述第i輥與上述第2輥之間: ^的第2喷嘴,上述第卜第2輥構成於相互之間生成大 ^附近之放電之-對f極。較佳為上述第]處理部包括 面。上述第2輥之周面而嘴出上述紅氣體之第3 :為上述第4處理部包括將上述第4氣體嘴出 。 與上述第3輥之間之間隙的第4喷嘴,上述第2、第3輕構: 於相互之間生成大氣屋附近之放電之一對電極。 藉此,可一面將被處理膜按照第1輥、第2輥、第3報之 =送,-面於第1輥之周面將第⑽自第i喷嘴= 至被處理膜,繼而,於第1、第2輥間之間隙内將第 電漿化並照射至被處理膜'繼而、 體自第3喷嘴喷附至被處理膜,Μ第概之周面將第3氣 汉炎战联’其後,可於 ==第4氣_化並照射至被處理臈 : 理空間…丄 形成第1處理部之第1處 1之形成。P而提供。第1輥 電漿化"電極及形成第2處理部之=為:第2氣體 部而提供。第2輥係作為處』之形成 形成部而提供12輥及第I/處部之第3處理空間之 -對雷極W 帛3輥係作&將第4氣體電漿化之 供對電極及形成第4處理部之第4處理空間之形成部而提 ^發明之表面處理較佳為於大氣_ 述第2處理步驟及卜诂铱 τ兀住馮上 進行。此處,所神大慎理步驟之«化於大氣壓附近下 處所明大氣塵附近,係&·〇13χΐ〇4〜5〇 663χΐ〇4 162457.doc 201241490I62457.doc 201241490 The first nozzle of the first gas is discharged. Preferably, the second #_ includes a second nozzle that ejects the second gas between the ith roller and the second roller: ^, and the second roller is formed to be adjacent to each other The discharge - the f pole. Preferably, the first processing unit includes a surface. The third surface of the red roller on the peripheral surface of the second roller is the third processing unit including the fourth gas nozzle. The fourth nozzle having a gap with the third roller, the second and third light structures, generates a pair of discharge electrodes in the vicinity of the atmosphere chamber. Thereby, the film to be processed can be fed in accordance with the first roll, the second roll, and the third report, and the (10)th from the i-th nozzle to the film to be processed can be formed on the circumferential surface of the first roll, and then In the gap between the first and second rolls, the first plasma is irradiated and irradiated to the film to be treated. Then, the body is sprayed from the third nozzle to the film to be treated, and the third surface is the third gas. After that, the formation of the first portion 1 of the first processing unit can be formed by the == fourth gasization and irradiation to the treated surface: the space. P is provided. The first roll plasmaization & electrode is formed by the second gas portion. The second roller system serves as a forming portion for providing a 12-roller and a third processing space of the first/segment portion - a pair of lightning-pole W 帛3 roller systems and a counter electrode for plasma-treating the fourth gas The surface treatment for forming the fourth processing space of the fourth processing portion and the surface treatment of the invention is preferably carried out in the second processing step and the second processing step. Here, the steps of the great deliberation of the law are in the vicinity of the atmospheric dust near the atmospheric pressure, Department & 〇 13χΐ〇4~5〇 663χΐ〇4 162457.doc 201241490

Pa之範圍’若考慮到麼力調整之容易化或裝置構成之簡便 化’則較佳為Pa,更佳為9 33ΐχ 1 〇4〜10.397χ 1 〇4 pa。 上述被處理膜較佳為難接著性光學樹脂臈。本發明適於 在將難接著性光學樹脂膜接著於易接著性光學樹脂膜時, 提高難接著性光學樹脂膜之接著性及接著耐久性。作為上 述難接著性光學樹脂膜之主要成分,例如可列舉:三乙醯 纖維素(TAC)、聚丙烯(PP,polypropylene)、聚乙烯(pE, P_ethylene)、環烯烴聚合物(c〇p,cyc丨〇〇丨· ρ〇ΐγ_)、 環烯共聚物(COC,cycloolefin copolymer)、聚對苯二曱酸 乙二酯(PET,p〇lyethylene terephthalate)、聚甲基丙烯酸 曱酯(PMMA,polymethylmethacrylate)、聚醯亞胺(PI, polyimide)等。上述被處理膜更佳為tac膜。 作為上述易接著性光學樹脂膜之主要成分,例如可列舉 聚乙烯醇(PVA)、乙烯-乙酸乙烯共聚物(EVA,ethylene-vinyl acetate copolymer) 等。 上述第1氣體之聚合性單體與上述第3氣體之聚合性單體 較佳為相同之聚合性單體,但亦可為相互不同之聚合性單 體。 作為上述第1、第3氣體之聚合性單體,可列舉包含不飽 和鍵及特定官能基之單體。特定官能基較佳為選自羥基、 缓基、乙醯基、縮水甘油基、環氧基、碳數丨〜…之酯基、 職基、醛基者,尤佳為羧基或羥基等親水基。 作為包含不飽和鍵及羥基之單體,可列舉曱基丙稀酸乙 162457.doc 201241490 二醇酯'烯丙醇、曱基丙烯酸羥乙酯等。 作為包含不飽和鍵及羧基之單體,可列舉丙烯酸、曱基 丙烯酸、衣康酸、馬來酸、2-曱基丙稀醯丙酸等。 作為包含不飽和鍵及乙醯基之單體’可列舉乙酸乙稀醋 等。 作為包含不飽和鍵及縮水甘油基之單體,可列舉曱其丙 烯酸縮水甘油等》 作為包含不飽和鍵及酯基之單體,可列舉:丙烯酸甲 酉旨、丙烯酸乙醋、丙稀酸丁醋、丙烯酸第三丁酯、丙稀 酸-2-乙基己酯、丙烯酸辛酯 '甲基丙烯酸甲酯、曱基丙烯 酸乙酯、甲基丙烯酸丁酯、甲基丙烯醆第三丁酯' 甲基丙 烯酸異丙酯、曱基丙烯酸_2-乙酯等。 作為包含不飽和鍵及醛基之單體’可列舉丙烯酸酸、巴 豆醛等。The range of Pa' is preferably Pa if it is easy to adjust or the simplicity of the device configuration, and more preferably 9 33 ΐχ 1 〇 4 to 10.397 χ 1 〇 4 pa. The film to be treated is preferably a hard-to-adhere optical resin. The present invention is suitable for improving the adhesion and adhesion durability of the difficult-to-adhere optical resin film when the difficult-to-adhere optical resin film is attached to the easily-adherent optical resin film. Examples of the main component of the above-mentioned difficult-to-adhere optical resin film include triacetyl cellulose (TAC), polypropylene (PP), polyethylene (pE, P_ethylene), and cycloolefin polymer (c〇p, Cyc丨〇〇丨· ρ〇ΐγ_), cycloolefin copolymer (COC), polyethylene terephthalate (PET), polymethylmethacrylate (PMMA, polymethylmethacrylate) ), polyimide, and the like. The above treated film is more preferably a tac film. The main component of the above-mentioned easy-adhesive optical resin film may, for example, be polyvinyl alcohol (PVA) or ethylene-vinyl acetate copolymer (EVA). The polymerizable monomer of the first gas and the polymerizable monomer of the third gas are preferably the same polymerizable monomer, but may be mutually different polymerizable monomers. The polymerizable monomer of the first and third gases includes a monomer containing an unsaturated bond and a specific functional group. The specific functional group is preferably a hydroxyl group, a slow group, an ethyl fluorenyl group, a glycidyl group, an epoxy group, an ester group of a carbon number ..., ..., a valence group, an aldehyde group, and more preferably a hydrophilic group such as a carboxyl group or a hydroxyl group. . Examples of the monomer containing an unsaturated bond and a hydroxyl group include mercaptopropionic acid B 162457.doc 201241490 glycol ester 'allyl alcohol, hydroxyethyl methacrylate, and the like. Examples of the monomer containing an unsaturated bond and a carboxyl group include acrylic acid, mercaptoacrylic acid, itaconic acid, maleic acid, and 2-mercaptopropionic acid. Examples of the monomer containing an unsaturated bond and an ethyl hydrazine group include ethyl acetate vinegar and the like. Examples of the monomer containing an unsaturated bond and a glycidyl group include glycidyl acrylate and the like. Examples of the monomer containing an unsaturated bond and an ester group include acrylic acid, ethyl acrylate, and butyl acrylate. Vinegar, tributyl acrylate, 2-ethylhexyl acrylate, octyl acrylate 'methyl methacrylate, ethyl methacrylate, butyl methacrylate, methacrylic acid tert-butyl ester' Isopropyl methacrylate, 2-ethyl methacrylate, and the like. Examples of the monomer containing an unsaturated bond and an aldehyde group include acryl acid, crotonaldehyde and the like.

、1-環己烯、1_ 於上述被處理时 合膜之情形時, -環庚烯、1·環辛烯 環戊二烯(DCPD , 系單體。作為水溶性單體,可列 (ΑΑ,acrylic acid)、曱基丙烯 i 胺、甲基丙婦酿胺、N,N-二曱胺 曱基醯胺等。作為稀烴系單體, 烯' 1-辛稀、1-環戊稀、1·環己 以外’可列舉環戊二烯、 dicyclopentadiene)等。 上述第1、第3 第3氣體之聚合性單體中特 別是上述第1氣體 162457.doc •10· 201241490 之聚合性單體更佳為於電漿聚合時與被處理膜之親和,性較 间°作為此種單體’可列舉上述聚合性單體為具有乙烯性 不飽和雙鍵及羧基之單體,具體而言,可列舉丙烯酸 (CH2-CHC〇〇H)、甲基丙稀 g楚(CH2=C(CH3)C00H)。上述 第1乳體之聚合性單體及上述第3氣體之聚合性單體更佳為 丙烯馱或甲基丙烯酸,冑而更佳為丙烯酸。藉此,可於電 漿聚合時體現與被處理臈之親和性。因此,可確實地提高 被處理臈之接著性甚至接著耐久性。 較佳為上述第1氣體及上述第2氣體中不含上述添加成 分。藉此,可於上述第i氣體中之聚合性單體經電漿聚合 時確實地體現與被處理膜之親和性。甚至,可確實地提 兩被處理膜之接著性及接著耐久性。 上述添加成分係與上述聚合性單體不同之化合物,較佳 為能體現上述聚合性單體之電漿聚合物之疏水化、交聯 化、或與接著劑之反應性促進等作用。 上述第3、第4氣體中之上述第4氣體較佳為含有作為上 述添加成分之氧氣、氫氣、飽和烴氣體、或不飽和煙氣 ,。認為該等添加成分於第4處理步驟中引起上述聚合性 早體之電漿聚合物之疏水化、交聯化、或與接著劑之反應 性促進等作用^ ' 於上述第4氣體含有氧(〇2)作為上述添加成分之情形 時,第4氣體中之氧之體積滚度較佳為5〇〇沖⑺〜刪 PPm。藉由使氧濃度為’卯喊上,而可確保所期望之接 著耐久性。藉由使氧濃度為3_卯喊下,而可防止聚合 I62457.doc 201241490 性單體之聚合反應受到阻礙。 於上述第4氣體含有鼠(H2)作為上述添加成分之情形 時’第4氣體中之灸之體積》農度較佳為5〇〇 ppm〜loooo PPm。藉由使氫濃度為500 ppm以上,而可確保所期望之接 著耐久性。若氫濃度超過8000 ppm〜loooo ppm,則接著耐 久性之提高度飽和。藉由使氫濃度為丨〇〇〇〇 ppm以下而 可獲得所期望之接著对久性並可節約氫氣之使用量。 作為上述飽和烴,可列舉甲烷、乙烷、丙烷、丁烷等。 作為上述不飽和煙,可列舉乙烯、乙炔等。上述第4氣體 亦可含有甲烷、或乙烯、或乙炔作為上述添加成分。認為 乙快等不飽和烴特別有助於上述電漿聚合物之交聯。 於上述添加成分為交聯促進劑之情形時,該添加成分 (交聯促進劑)係與第1氣體中之聚合性單體及第3氣體中之 聚合性單體不同之化合物。作為交聯促進劑,可列舉二烯 丙基化合物(diallyl Compound)、二胺化合物、縮水甘油化 合物、經基化合物等。㈣化合物作為交聯促進劑而為人 知,且業者認為特別有助於上述電毁聚合物之交聯化或與 接著劑之反應性促進等。作為上述添加成分之交聯促進劑 較佳為包含於上述第3氣體中。 作為二烯丙基化合物’可列舉二烯丙基胺、馬來酸二烯 丙醋、甲基丙烯酸稀丙醋等。作為二胺化合物,可列舉乙 二胺等。作為縮水甘油化合物’可列舉烯丙基縮水甘油 醚、甲基丙稀酸縮水甘油等。作為經基化合物,可列舉丙 稀酸經乙醋、曱基丙稀酸經乙鴨等。 162457.doc 201241490 上述第1氣體或第3氣體亦可包含搬送聚合 氣。載氣較料選自氮、氬、氦等惰性氣體1經濟2 観點而言,較佳為使用氮作為載氣。 丙稀酸以基丙烯酸等大多數聚合性單體於常溫常屋下 為液相。使如此之聚合性單體於惰性氣體等載氣中氣化即 可。作為使聚合性單體於載氣中氣化之方法,可 用載氣擠出聚合性單體之液面上之飽和蒸氣的擠出方式* =聚合性單體液令使載氣起泡之起泡方式、加熱聚合單 =液而促進其蒸發之加熱方式等°亦可併用擠出方式與Γ …方式、或起泡方式與加熱方式。亦可將載氣之-部分導 入至氣化器,且使剩餘部分不通過氣化器,從而於氣化器 ^下游側使載氣之上述_部分與剩餘部分合流 器之溫度或載氣之上述-部分與剩餘部分之分配比,二 即第1氣體或第3氣體中之聚合性單體濃度。 於加熱而使之氣化之情形時,考慮到加熱器之負擔,聚 合性早體較佳為選擇彿點為扇。c以下者。又,聚人 體較佳為選擇不會因加熱而分解(化學變化)者。 於第3氣體或第4氣體中夕# Λ 之交聯促進劑於常溫常壓 相之=時’使該交聯促進劑於惰性氣體等载氣中氣化即 可。作為使交聯促進劑於載氣中氣化之方法, 載氣擠出交聯促進劑之液面上之飽和蒸氣的擠出方式、於 交聯促進劑之液中使载氣起泡之起泡方式、加熱交聯促進 劑之液而促進其蒸發之加熱方式等。亦可併用擠出方式盘 加熱方式、或起泡方式與加熱方式。亦可將載氣之一㈣ 162457.doc 201241490 導入至氣化器且使剩餘部分不通過氣化 , 窃從而於氣化器 之下游側使載氣之上述一部分與剩餘部分合流。藉由?化 器之溫度或載氣之上述一部分與剩餘部分之分配比 了古。 節第3氣體或第4氣體中之交聯促進劑之漠度。 ° 於使第3氣體中含有交聯促進劑之情形時,亦可於將液 相之聚合性單體與液相之交聯促進劑混合後,使該混合液 氣化;又可於使液相之聚合性單體與液相之交聯^齊^ 互分別氣化後,將經氣化之聚合性單體與經氣化之交 進劑混合。 於上述第3氣體含有上述添加成分之情形時,亦可將上 述第3氣體之聚合性單體與上述添加成分於上述被處理膜 之表面上混合。 ' 於上述第4氣體含有上述添加成分之情形時,亦可將上 述第4氣體之放電生成氣體與上述添加成分於上述被處理 膜之表面上混合。 作為上述第2氣體之放電生錢體及上述第4氣體之 生成氣體,可列舉氮(N2)或稀有氣體(MU 性氣體。上述放電生成氣體亦可為複數 :之現合氣體。上述第2氣體之放電生成氣體與上成:第= 之放電生成氣體既可為彼此相同之氣體、 同之氣體。 了為相互不 [發明之效果] 根據本發明,可提高被處理臈之接著耐久性。 【實施方式】 162457.doc 201241490 以下,根據圖式對本發明之實施形態進行說明。 圖4係表示偏光板pf。偏光板PF包含偏光膜7及保護膜 9 °偏光膜7夾在2層保護膜9之間。各保護膜9與偏光膜7經 由接著劑8而貼合》偏光膜7包含以聚乙烯醇(pva)為主要 成分而包含之PVA膜❶作為接著劑8,使用PVA水溶液等 PVA系接著劑。PVA系接著劑亦可包含提高接著力之公知 之添加劑成分。保護膜9包含以三乙醢纖維素(TAC)為主要 成分而包含之TAC膜《膜9之厚度為例如1〇〇 μη1左右。 於TAC膜9之接著劑8側之面上覆蓋有接著性促進臈8〇。 接著性促進膜80為2層電漿聚合膜81、82之積層構造^•第1 電衆聚合膜81包含丙烯酸(聚合性單體)之電漿聚合物,且 與TAC膜9接觸《第2電漿聚合膜82包含丙烯酸之電漿聚合 物,且賦予耐水性或與接著劑8之高反應性等特性。第2電 漿聚合膜82與接著劑8接觸。 圖1係表示於TAC膜9(以下,適當稱為「被處理膜9」)上 形成接著性促進膜80之膜表面處理裝置1β膜表面處理裝 置1包括支持部10、第1處理部91、第2處理部92、第3處理 部93、及第4處理部94。作為處理對象之TAC膜9為連續膜 狀。藉由支持部10而支持該被處理臈9。第丨處理部91係進 行使第1氣體gl接觸被處理膜9之處理(第1處理步驟)。第2 處理部92係於第1處理部91之處理後或與第丨處理部91之處 理同時地,將第2氣體g2電毅化(包含激發、活化、自由基 化、離子化等)並使之接觸被處理膜9(第2處理步驟卜藉 此’形成第HI聚合膜81。第3處理部93係於第2處理部 162457.doc 15 201241490 =之處理後’使第3氣體g3接觸被處理膜%第3處理步驟)。 第4處理部94係於第3處理部93之處理後或與第3處理部93 ,處理同時地’將第4氣體g4„化並使之接觸被處 第4處理步驟)。藉此,形成第2電浆聚合膜.以下,進 一步進行詳細敍述。 如圖1及圖2所示,支持部10包括3個主輥"、12、13及 導輥16、17。该等主輥11〜13為彼此相同直徑、相同軸長 之圓筒體。輥11〜13之至少外周部由金屬構成,且於包含 該金屬之外周部之外周面覆蓋有固體介電層。各輥"、 12、13之軸線朝向與圖!之紙面正交之水平方向(以下稱為 「處理寬度方向」3個輥n、12、13依此順序且平行地 排列於圖1中,左側之第i棍i】與中央之第2棍1 2之間之 間隙92a與中央之第2輥12與右側之第3輥13之間之間隙 94a之厚度彼此相等。間隙92a、之最窄之部位之 厚度為例如〗mm〜數mm左右。 輥11〜13兼作膜表面處理裝置丨之電漿放電生成用電極。 雖省略圖示,但電源連接於中央之輥12,且左右之輥u ' 13電性接地。相&,亦可使電源分別連接於左右之輥U、 13,且中央之輥12電性接地。電源輸出例如脈衝波狀之高 頻電力。藉由該電力供給,而使左側之輥11與中央之輥12 之間在大氣壓附近之壓力下生成電漿放電,間隙92a成為 大氣壓附近之放電空間。又,藉由上述電力供給,而使中 央之輥12與右側之輥13之間在大氣壓附近之壓力下生成電 毁放電’間隙94a成為大氣壓附近之放電空間。 162457.doc 201241490 於輥11、12之下方配置有複數(圖中為2個)個前段導輥 16、16。於輥12、13之下方配置有複數(圖中為2個)個後段 導輥17、17。 連續片狀之被處理膜9係使寬度方向朝向上述處理寬度 方向(圖1之紙面正交方向),而由支持部]〇支持。被處理膜 9係刀別以半周左右纏繞於3個輥丨丨、丨2、〗3之上側之周 面。包含各輥11、12、13之上側之周面及形成間隙❿、 94a之部分的約半周部分由被處理膜9覆蓋。 輥11、12間之被處理膜9係自間隙92a向下方下垂,且纏 繞於導輥16、上。藉此’間隙92a與導輥16、16之間之 被處理膜9形成折回部分9a。折回部分9“處理寬度方向 觀察時呈三角形狀。 輥12、13間之被處理膜9係自間隙94&向下方下垂,且纏 繞於導輥17、17上。藉此,間隙…與導輥17、17之間之 被處理膜9形成折回部分9be折回部分9M處理寬度方向 觀察時呈三角形狀。 雖省略圖示,但各親 接有旋轉機構。硬 轉機構包括馬達等驅動部'及將該驅動部之驅動力傳達至 =二13之軸之傳達機構。傳達機構包括例如皮帶輪 機構或齒輪列。如於圖1中由中空圓弧狀箭頭所示般,藉 ^轉機構,而使輥11、12、13分別圍繞各自之軸線且相 互同步地向相同方向(於圖1中向順時針方向)旋轉= 將被處理臈9按照第mil、第2輥12、第 ^ 致右方向搬送。支持部1G兼作被處理❹之搬送H序向大 162457.doc 201241490 ::::1、12、13中設置有調溫機構(省略圖示)。釣-機構包含例如形成於链m、13内之調溫路。可)藉= I皿之㈠媒體流經調溫路而對心、12 溫。甚至,可對輥u ' 12 進仃调 3之周面上之被處理膜9進行 調溫。輥11、12、13之外宕加由, 犋9進仃 之叹疋,皿度較佳為低於聚合性單體之 凝縮溫度。 第1處理。Ρ91包括第!氣體gl之供給部。及第】噴嘴31。 第1氣體gl含有聚合性單體及載氣。作為聚合性單體係使 用丙烯酸AA。作為載氣係使用氮(n2:^ 雖省略詳細之圖示’但第1氣體供給部21包含氣化器。 於氣化器t ’液體之丙烯酸於載氣中氣化。氣化既可為起 泡方式,亦可為擠出方式。藉由將經氣化之丙烯酸與載氣 混合,而生成第i氣體gl。^氣體gl中不含下述添加成 分。 第1氣體供給部21經由氣體路21c而連接於第丨喷嘴31。 第1喷嘴31配置於第1輥11之上方。第i喷嘴31向處理寬度 方向較長地延伸,且於第丨輥]^之周方向(圖丨之左右)上具 有某種程度之寬度。於第i喷嘴31之下表面設置有喷出 口。喷出口係以分佈於第丨喷嘴31之下表面的較廣之範圍 (處理寬度方向及親周方向)之方式形成。第1喷嘴31之喷出 面(下表面)面向第1輥11上之被處理膜9。來自第1氣體供給 部21之第1氣體gl經由第1氣體供給線21c而供給至第1喷嘴 31 ’並藉由第1喷嘴31内之整流部(省略圖示)而均一化,之 後’自第1喷嘴31之喷出口喷出。第1氣體gl之喷出氣流成 162457.doc -18- 201241490 為均一地分佈於處理寬度方向之氣流。 一於氣體路2U及第i喷嘴31中設置有調溫機構(省略圖 示)。氣體路21c之調溫機構包含電熱帶等。第丨喷嘴31之 調溫機構包含供調溫水通過之調溫路。氣體路21。及第K 嘴3 1之設定溫度高於丙烯酸之凝縮溫度。藉此,可防止丙 烯酸於自喷嘴31喷出之前在氣體路21c或喷嘴31内凝縮。 於第1喷嘴31之底部設置有遮蔽構件41。遮蔽構件“係 形成為沿第1輥11之周方向之圓弧狀之剖面,且成為於處 理寬度方向上以與輥11大致相同之長度延伸之彎曲板狀。 遮蔽構件41之圓弧方向(圖i中左右)之兩端部較第i噴嘴31 更向第1輥11之周方向延伸出。遮蔽構件41之上述圓弧方 向(圖1中左右)之周長為例如24〇~3〇〇 mm左右。於圖1中, 遮蔽構件4 1之左側之端部開放。於圖1中,遮蔽構件4丨之 右側之端部與下述閉塞構件51抵接或接近。 於遮蔽構件41與第1輥Π之間形成有第1處理空間91a。 第1親11係作為第1處理部91之第1處理空間91a之形成部而 提供。第1處理空間91 a成為沿第1輥11之上側之周面的剖 面圓弧狀之空間。第1噴嘴31之下表面之喷出口貫通遮蔽 構件41且與第1處理空間9ia連通。藉由遮蔽構件41,而使 第1處理空間91 a較第1喷嘴3 1更向第1輥11之周方向之兩側 延長。於圖1中’第1處理空間91 a之左側之端部與輥丨丨之 左側(與輥12側相反側)之外部空間相連。於圖1中,第1處 理空間91a之右側之端部與下述閉塞構件51與輥丨丨之間的 間隙相連。 162457.doc 19 201241490 *第1處理空間91a於上述圓弧方向(圖i中左右)之中央部狹, 1-cyclohexene, 1_ when the film is treated as described above, -cycloheptene, 1 ·cyclooctene cyclopentadiene (DCPD, monomer. As a water-soluble monomer, can be listed (ΑΑ ,acrylic acid), mercaptopropene i-amine, methyl propyl amide, N,N-diamine decyl decylamine, etc. As a dilute hydrocarbon monomer, ene '1-octane, 1-cyclopentene Other than 1·cyclohexene, cyclopentadiene and dicyclopentadiene may be mentioned. Among the polymerizable monomers of the first, third, and third gases, the polymerizable monomer of the first gas 162457.doc •10·201241490 is more preferably an affinity with the film to be treated during plasma polymerization. The above-mentioned polymerizable monomer is a monomer having an ethylenically unsaturated double bond and a carboxyl group, and specific examples thereof include acrylic acid (CH2-CHC〇〇H) and methyl propylene g. Chu (CH2=C(CH3)C00H). The polymerizable monomer of the first emulsion and the polymerizable monomer of the third gas are more preferably acrylonitrile or methacrylic acid, and more preferably ruthenium. Thereby, the affinity with the treated crucible can be exhibited during the polymerization of the plasma. Therefore, it is possible to surely improve the adhesion of the treated crucible and even the durability. Preferably, the first gas and the second gas do not contain the additive component. Thereby, the affinity with the film to be treated can be surely exhibited when the polymerizable monomer in the above i-th gas is subjected to plasma polymerization. Even the adhesion of the two treated films and the subsequent durability can be surely obtained. The compound to which the above-mentioned additive component is different from the above-mentioned polymerizable monomer is preferably a function of hydrophobizing, cross-linking, or promoting reactivity with an adhesive agent of the plasma polymer of the above-mentioned polymerizable monomer. The fourth gas in the third and fourth gases preferably contains oxygen, hydrogen, a saturated hydrocarbon gas or an unsaturated flue gas as the above-mentioned additive component. It is considered that the additive component causes the hydrophobicization of the plasma polymer of the polymerizable precursor, the crosslinking, or the promotion of reactivity with the adhesive in the fourth treatment step, and the fourth gas contains oxygen ( 〇 2) In the case of the above-mentioned additive component, the volume rolling of oxygen in the fourth gas is preferably 5 Torr (7) to 5%. By making the oxygen concentration "swing", it is possible to ensure the desired durability. The polymerization of the monomer I62457.doc 201241490 can be prevented by blocking the oxygen concentration to 3 卯. In the case where the fourth gas contains the mouse (H2) as the additive component, the volume of the moxibustion in the fourth gas is preferably 5 〇〇 ppm to loooo PPm. By setting the hydrogen concentration to 500 ppm or more, the desired durability can be ensured. If the hydrogen concentration exceeds 8000 ppm to loooo ppm, then the increase in durability is saturated. By making the hydrogen concentration below 丨〇〇〇〇 ppm, the desired subsequent durability can be obtained and the amount of hydrogen used can be saved. Examples of the saturated hydrocarbon include methane, ethane, propane, and butane. Examples of the unsaturated smoke include ethylene and acetylene. The fourth gas may contain methane, ethylene or acetylene as the additive component. It is considered that an unsaturated hydrocarbon such as B fast contributes particularly to the crosslinking of the above plasma polymer. When the additive component is a crosslinking accelerator, the additive component (crosslinking accelerator) is a compound different from the polymerizable monomer in the first gas and the polymerizable monomer in the third gas. Examples of the crosslinking accelerator include a diallyl compound, a diamine compound, a glycidyl compound, a warp compound, and the like. (4) The compound is known as a crosslinking accelerator, and it is considered by the manufacturer to contribute particularly to the crosslinking of the above-mentioned electroporation polymer or the promotion of reactivity with a subsequent agent. The crosslinking accelerator as the additive component is preferably contained in the third gas. Examples of the diallyl compound' include diallylamine, maleic acid dipropylene vinegar, and methacrylic acid propylene glycol. The diamine compound may, for example, be ethylenediamine. Examples of the glycidol compound' include allyl glycidyl ether and methyl propylene glycol glycidol. Examples of the transbasic compound include acetoacetic acid, thioglycolic acid, and the like. 162457.doc 201241490 The first gas or the third gas may further include a transport polymerization gas. The carrier gas is preferably selected from the group consisting of nitrogen, argon, helium and the like, and is preferably a nitrogen gas as a carrier gas. Acrylic acid is a liquid phase in the presence of most polymerizable monomers such as acryl. Such a polymerizable monomer may be vaporized in a carrier gas such as an inert gas. As a method of vaporizing a polymerizable monomer in a carrier gas, an extrusion method of extruding a saturated vapor on a liquid surface of a polymerizable monomer with a carrier gas* = a polymerizable monomer liquid causes bubbling of a carrier gas The foaming method, the heating method for heating the polymerization unit = the liquid, and the heating method for promoting the evaporation thereof may be used in combination with the extrusion method, the foaming method, and the heating method. The carrier gas portion may also be introduced into the gasifier, and the remaining portion may not pass through the gasifier, so that the temperature of the above-mentioned portion of the carrier gas and the remaining portion of the combiner or the carrier gas on the downstream side of the gasifier The distribution ratio of the above-mentioned part to the remaining part, that is, the concentration of the polymerizable monomer in the first gas or the third gas. In the case of heating and vaporizing it, in consideration of the burden of the heater, it is preferable to select the Buddha point as a fan. c below. Further, it is preferred that the aggregate is selected such that it does not decompose (chemically change) by heating. In the third gas or the fourth gas, the crosslinking accelerator may be vaporized in a carrier gas such as an inert gas at a normal temperature and normal pressure phase. As a method of vaporizing a crosslinking accelerator in a carrier gas, an extrusion method of a saturated vapor on a liquid surface of a carrier gas extrusion crosslinking accelerator, and a bubbling of a carrier gas in a liquid of a crosslinking accelerator A foaming method, a heating method in which a liquid of a crosslinking accelerator is heated to promote evaporation thereof, and the like. It is also possible to use an extrusion method, a heating method, a foaming method and a heating method. One of the carrier gases (4) 162457.doc 201241490 can also be introduced into the gasifier and the remaining portion is not vaporized, so that the aforementioned portion of the carrier gas merges with the remainder on the downstream side of the gasifier. By? The temperature of the catalyst or the distribution of the above part of the carrier gas to the remainder is more ancient. The degree of inconsistency of the crosslinking accelerator in the third gas or the fourth gas. When the crosslinking agent is contained in the third gas, the mixed liquid may be vaporized by mixing the polymerizable monomer in the liquid phase with the crosslinking accelerator in the liquid phase; After the vaporization of the polymerizable monomer and the liquid phase, the gasified polymerizable monomer is mixed with the vaporized crosslinking agent. When the third gas contains the additive component, the polymerizable monomer of the third gas may be mixed with the additive component on the surface of the film to be treated. In the case where the fourth gas contains the additive component, the discharge generating gas of the fourth gas may be mixed with the additive component on the surface of the film to be treated. Examples of the discharge gas body of the second gas and the gas for forming the fourth gas include nitrogen (N2) or a rare gas (MU gas. The discharge generation gas may be a plurality of available gas: the second gas. The discharge generation gas of the gas and the discharge generation gas of the first embodiment may be the same gas and the same gas as each other. [Effects of the Invention] According to the present invention, the durability of the treated crucible can be improved. [Embodiment] 162457.doc 201241490 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Fig. 4 shows a polarizing plate pf. The polarizing plate PF includes a polarizing film 7 and a protective film. The polarizing film 7 is sandwiched between two protective films. The protective film 9 and the polarizing film 7 are bonded via the adhesive 8 . The polarizing film 7 contains a PVA film containing polyvinyl alcohol (pva) as a main component as the adhesive 8 and a PVA such as a PVA aqueous solution. The PVA-based adhesive may further contain a known additive component for improving the adhesion. The protective film 9 contains a TAC film containing the triethylene phthalocyanine (TAC) as a main component, and the thickness of the film 9 is, for example, 1 〇. 〇μη1 The surface of the adhesive agent 8 on the side of the TAC film 9 is covered with an adhesion promoting 臈8〇. The next promoting film 80 is a laminated structure of two plasma polymerization films 81 and 82. • The first electron polymerization film 81 A plasma polymer containing acrylic acid (polymerizable monomer) and in contact with the TAC film 9 "the second plasma polymerization film 82 contains a plasma polymer of acrylic acid, and imparts water resistance or high reactivity with the adhesive 8 and the like. The second plasma polymerization film 82 is in contact with the adhesive agent 8. Fig. 1 shows a film surface treatment apparatus 1β film in which the adhesion promoting film 80 is formed on the TAC film 9 (hereinafter referred to as "processed film 9" as appropriate). The surface treatment apparatus 1 includes a support unit 10, a first processing unit 91, a second processing unit 92, a third processing unit 93, and a fourth processing unit 94. The TAC film 9 to be processed has a continuous film shape. The processing unit 91 is configured to perform the process of bringing the first gas gl into contact with the processed film 9 (first processing step). The second processing unit 92 is processed by the first processing unit 91. Or, simultaneously with the processing of the second processing unit 91, the second gas g2 is electrically converted (including excitation, activation, and radicalization). Ionization or the like) is brought into contact with the film to be processed 9 (the second processing step is to form the HI polymerization film 81. The third processing unit 93 is after the second processing unit 162457.doc 15 201241490 = The third gas g3 is in contact with the film to be processed in the third processing step. The fourth processing unit 94 is configured to process the fourth processing unit 93 or to simultaneously process the fourth gas g4 simultaneously with the third processing unit 93. The fourth plasma processing film is formed in contact with the substrate. The second plasma polymerization film is formed in the following. As shown in FIGS. 1 and 2, the support portion 10 includes three main rollers ", 12 , 13 and guide rollers 16, 17. The main rolls 11 to 13 are cylindrical bodies having the same diameter and the same axial length. At least the outer peripheral portion of the rolls 11 to 13 is made of a metal, and a peripheral surface of the outer periphery including the metal is covered with a solid dielectric layer. The axis of each roller ", 12, 13 is oriented with the figure! In the horizontal direction orthogonal to the paper surface (hereinafter referred to as "processing width direction", the three rollers n, 12, and 13 are arranged in this order and in parallel in FIG. 1, the i-th stick i on the left side, and the second stick 1 in the center. The gap 94a between the two gaps and the gap 94a between the center second roller 12 and the right third roller 13 are equal to each other. The thickness of the narrowest portion of the gap 92a is, for example, about mm to several mm. 11 to 13 also serve as a plasma discharge generating electrode for the plasma surface treatment apparatus. Although not shown, the power source is connected to the center roller 12, and the left and right rollers u'13 are electrically grounded. The phase & The rollers 12 and 13 are connected to the left and right rollers, respectively, and the roller 12 in the center is electrically grounded. The power source outputs, for example, a pulse wave of high-frequency power. By the power supply, the roller 11 on the left side and the roller 12 in the center are placed between A plasma discharge is generated under the pressure near the atmospheric pressure, and the gap 92a becomes a discharge space near the atmospheric pressure. Further, by the above-described power supply, the electric shock discharge is generated between the central roller 12 and the right roller 13 at a pressure near atmospheric pressure. 'The gap 94a becomes a discharge space near atmospheric pressure 162457.doc 201241490 A plurality of (two in the figure) front guide rolls 16, 16 are disposed below the rolls 11, 12. A plurality of (two in the figure) rear guide rolls are disposed below the rolls 12, 13. 17 and 17. The film-form processed film 9 is oriented such that the width direction thereof faces the processing width direction (the direction orthogonal to the paper surface in Fig. 1), and is supported by the support portion 〇. The film to be processed 9 is wound around a half cycle. The circumferential surface on the upper side of the three rolls 丨, 丨2, and 。3, and the circumferential surface including the upper side of each of the rolls 11, 12, and 13 and the half-circumferential portion of the portion where the gap ❿, 94a is formed are covered by the film to be processed 9. The film 9 to be processed between the rolls 11 and 12 is suspended downward from the gap 92a, and is wound around the guide rolls 16. Thus, the film 9 to be processed between the gaps 92a and the guide rolls 16 and 16 forms the folded-back portion 9a. The folded-back portion 9 has a triangular shape when viewed in the width direction of the processing. The film 9 to be processed between the rolls 12 and 13 hangs downward from the gap 94 & and is wound around the guide rolls 17 and 17. Thereby, the gap ... and the guide roll The film to be processed 9 between 17 and 17 forms a folded-back portion 9be folded back portion 9M when viewed in the width direction Although not shown in the drawings, each of them has a rotating mechanism, and the hard turning mechanism includes a driving unit 'such as a motor and a transmitting mechanism that transmits the driving force of the driving unit to the axis of the second two. The transmitting mechanism includes, for example, a pulley mechanism. Or a gear train. As shown by the hollow arc-shaped arrow in Fig. 1, the rollers 11, 12, 13 are respectively arranged in the same direction around their respective axes and in synchronization with each other (in Fig. 1) In the clockwise direction, the rotation is carried out. The 臈9 is transported in the right direction according to the mil, the second roller 12, and the second direction. The support unit 1G doubles as the processed HH to the large 162457.doc 201241490 ::::1 Temperature adjustment mechanisms (not shown) are provided in 12 and 13. The fishing-mechanism includes, for example, a temperature regulating path formed in the chains m, 13. Can) l = I (1) The media flows through the temperature control road and the heart, 12 temperature. Even, the film 9 to be processed on the circumferential surface of the roll u' 12 can be tempered. The rolls 11, 12, and 13 are added with a sigh of 犋9, and the degree of the dish is preferably lower than the condensing temperature of the polymerizable monomer. The first process. The crucible 91 includes a supply portion of the first gas gl. And the first nozzle 31. The first gas gl contains a polymerizable monomer and a carrier gas. Acrylic acid AA was used as the polymerizable single system. Nitrogen is used as the carrier gas system (n2:^, the detailed illustration is omitted, but the first gas supply unit 21 includes a vaporizer. The liquid acid in the vaporizer t' liquid is vaporized in the carrier gas. The foaming method may be an extrusion method. The vaporized acrylic acid is mixed with a carrier gas to form an i-th gas gl. The gas gl does not contain the following additive component. The first gas supply unit 21 passes through the gas. The first nozzle 31 is disposed above the first roller 11. The first nozzle 31 extends longer in the processing width direction and is in the circumferential direction of the second roller (Fig. The left and right sides have a certain width. The lower surface of the i-th nozzle 31 is provided with a discharge port. The discharge port is distributed over a wide range of the lower surface of the second nozzle 31 (processing width direction and pro-circumferential direction). The discharge surface (lower surface) of the first nozzle 31 faces the film to be processed 9 on the first roller 11. The first gas gl from the first gas supply unit 21 is supplied to the first gas supply line 21c via the first gas supply line 21c. The first nozzle 31' is uniformed by a rectifying portion (not shown) in the first nozzle 31, and is 'The discharge from the first nozzle 31 is ejected. The discharge gas of the first gas gl is 162457.doc -18- 201241490 is a gas flow uniformly distributed in the processing width direction. One in the gas path 2U and the i-th nozzle 31 A temperature adjustment mechanism (not shown) is provided. The temperature adjustment mechanism of the gas passage 21c includes a heating belt, etc. The temperature adjustment mechanism of the second nozzle 31 includes a temperature regulation path through which the temperature control water passes. The gas path 21 and the Kth nozzle The set temperature of 31 is higher than the condensation temperature of acrylic acid, whereby the acrylic acid can be prevented from being condensed in the gas path 21c or the nozzle 31 before being ejected from the nozzle 31. The shielding member 41 is provided at the bottom of the first nozzle 31. It is formed in a circular arc shape along the circumferential direction of the first roller 11, and has a curved plate shape extending in substantially the same length as the roller 11 in the processing width direction. The circular direction of the shielding member 41 (Fig. i Both ends of the middle and right sides of the shielding member 41 extend in the circumferential direction of the first roller 11. The circumferential direction of the arcuate direction (left and right in Fig. 1) of the shielding member 41 is, for example, 24 〇 to 3 mm. Left and right. In Fig. 1, the left end of the shielding member 41 is open. In Fig. 1, the end portion on the right side of the shielding member 4A abuts or approaches the closing member 51 to be described below. A first processing space 91a is formed between the shielding member 41 and the first roller cymbal. The first processing space 91 is provided in the forming portion of the first processing space 91a. The first processing space 91a is a space having a circular arc shape along the circumferential surface of the upper side of the first roller 11. The lower surface of the first nozzle 31 The discharge port penetrates the shielding member 41 and communicates with the first processing space 9ia. The shielding member 41 extends the first processing space 91a toward the both sides of the first roller 11 in the circumferential direction of the first nozzle 31. The end portion on the left side of the first processing space 91a in Fig. 1 is connected to the outer space on the left side (the side opposite to the side of the roller 12) of the roll. In Fig. 1, the end portion on the right side of the first processing space 91a is connected to the gap between the closing member 51 and the roller yoke described below. 162457.doc 19 201241490 * The first processing space 91a is narrow at the center of the arc direction (left and right in Fig. i)

乍隨著朝向上述圓弧方向之兩端部而略微變寬。第W 理空間91a之厚度較佳為1 mm左右。第1處理空間 之最乍之„卩位之厚度較佳為例如1瓜瓜左右。第丨處理空 最寬之。卩位之厚度較佳為例如1 〇 mm左右。第1處 理二間91 a之厚度亦可於整個區域為固定。遮蔽構件μ亦 可夫者第1喷嘴3 1而分離成第1親11之旋轉方向之上游側之 部分與下游側之部分,第丨喷嘴31之底面亦可直接面向第1 處理空間91a。 第2處理部92包括第2氣體g2之供給部22及第2喷嘴32。 第2氣體g2含有放電生成氣體。使用氮…^作為放電生成 氣體。於第2氣體令,不含下述添加成分。 於第2氣體供給部22連接有第2喷嘴32。第2喷嘴32設置 於被處理膜9之三角形狀之折回部分9&之内部。第2喷嘴u 於處理寬度方向較長地延伸,且與該延伸方向正交之剖面 朝向上方且前端逐漸變細。第2喷嘴32之上端(前端)之喷出 口面向輥間間隙92a。間隙92a之下端部藉由第2喷嘴32而 某種程度上閉塞。來自第2氣體供給部22之第2氣體g2藉由 第2噴嘴32内之整流部(省略圖示)而於處理寬度方向均一化 後,自第2喷嘴32之噴出口向間隙92a喷出。該第2氣體g2 之喷出氣流成為於處理寬度方向均· ~~地分佈之氣济。 間隙92a構成第2處理部92之第2處理空間。報u、12作 為第2處理部92之第2處理空間92a之形成部而提供。 於第2噴嘴32内,設置有未圖示之調溫路(第2氣體調溫 162457.doc -20- 201241490 機構)。水等調溫媒體通過第2喷嘴32内之調溫路。藉此, 可對第2噴嘴32進行調溫,甚至可調節第2氣體以之喷出溫 度第2喷嘴32之設定溫度低於第】喷嘴31之設定溫度,較 佳為低於丙烯酸(聚合性單體)之凝縮溫度。 於較第2處理空間92a更上側之輥n、12彼此間配置有閉 塞構件51。閉塞構件51隔著第2處理空間92&而與第2喷嘴 32對向》閉塞構件51於處理寬度方向較長地延伸,且與該 I伸方向正交之剖面朝向下方前端逐漸變細。閉塞構件” 。第2處理空間92a之上 閉塞。經由閉塞構件51 之下端(前端)面向第2處理空間92a 端部藉由閉塞構件51而某種程度上 與第1輥11之間之間隙,而使第4理空間與第2處理空 間❿連通。亦可使用與第2喷嘴32相同構造之喷嘴作為閉 塞構件51,且使其與第2喷嘴32上下反轉地設置,亦可自 該喷嘴5 1喷出第2氣體g2。 第3處理部93包括第3氣體供給部23及第3喷嘴33。第3氣 體供給部23係將第3氣體Θ供給至第3喷嘴33。第3氣體g3 包含與第1氣體gl相同之氣體1,第3氣體g3含有聚合性 單體及載氣。作為聚合性單體使料烯酸AA。作為載氣 使用氮(N2)。 雖省略詳細之圖示,伸筮 仁第3氣體供給部23包含氣化器。 於氣化器中’液體之丙烯酸 琊於載氣中軋化。氣化既可為起 泡方式’亦可為播出方戎 & 弋藉由將經氣化之丙烯酸與載氣 混合,而生成第3氣體。笙^ μ 8 第1氣體供給部21與第3氣體倂 給部23亦可包含丘诵> & & & 3,、逋之丙烯酸供給源。 I62457.doc -21. 201241490 第3氣體供給部23係經由氣體路23c而連接於第3喷嘴 33。第3喷嘴33配置於第2輥12之上方。第3喷嘴33於處理 寬度方向較長地延伸且於第2輥12之周方向(圖1之左右)具 有某種程度之宽度。於第3喷嘴33之下表面,設置有喷出 口。喷出口以分佈於第3喷嘴33之下表面之較廣之範圍(處 理寬度方向及輥周方向)之方式形成。第3喷嘴33之喷出面 (下表面)面向第2輥12上之被處理膜9。來自第3氣體供給部 23之第3氣體g3經由第3氣體供給線23c而供給至第3喷嘴 33,並於藉由第3噴嘴33内之整流部(省略圖示)而均一化 後,自第3噴嘴33之喷出口喷出。第3氣體g3之喷出氣流成 為於處理寬度方向均一地分佈之氣流。 於氣體路23c及第3喷嘴33,設置有調溫機構(省略圖 示)氣體路23c之調溫機構包含電熱帶等。第3喷嘴33之 調溫機構包含通過調溫水之調溫路。氣體路23c及第3喷嘴 33之設定溫度高於丙烯酸之凝縮溫度。藉此,可防止丙稀 酸於自喷嘴33喷出之前於氣體路23c或喷嘴31内凝縮。 於第3噴嘴33之底部設置有遮蔽構件43 ^遮蔽構件43係 形成沿第2輥12之周方向的圓弧狀之剖面,且成為於處理 寬度方向上以與輥12大致相同之長度延伸之彎曲板狀。遮 蔽構件43之圓弧方向(圖i中左右)之兩端部較第3喷嘴^更 向第2輥12之周方向延伸出。遮蔽構件43之上述圓弧方向 (圖1中左右)之周長為例如240〜300 mm左右。遮蔽構件43 之輥12之旋轉方向的上游側(圖丨中左)之端部與閉塞構件η 之側部抵接或接近。遮蔽構件43之輥12之旋轉方向的下游 162457.doc -22- 201241490 側(圖1中右)之端部與下述閉塞構件52抵接或接近》 於遮蔽構件43與第2輥12之間形成有第3處理空間93a。 第2輥12係作為第3處理部93之第3處理空間93a之形成部而 提供。第3處理空間93a成為沿第2輥12之上側之周面的剖 面圓弧狀之空間。第3噴嘴33之下表面之喷出口貫通遮蔽 構件43且與第3處理空間93a連通。藉由遮蔽構件43,而使 第3處理空間93a較第3喷嘴33更向第2輥12之周方向之兩側 延長。於圖1中,第3處理空間93&之左側之端部經由閉塞 構件51與親12之間之間隙,而與第2處理空間92a相連。於 圖1中’第3處理空間93a之右側之端部與下述閉塞構件52 與輥12之間之間隙相連。 第3處理空間93a於上述圓弧方向(圖1中左右)之中央部狹 窄’隨著朝向上述圓弧方向之兩端部而略微變寬。第3處 理空間93a之厚度較佳為1 mm〜10 mm左右。第3處理空間 93a之最窄之部位之厚度較佳為例如1 ^πι左右。第3處理空 間93a之最寬之部位之厚度較佳為例如丨〇 mm左右。第3處 理空間93 a之厚度亦可於整個區域為固定。遮蔽構件43亦 可夾著第3喷嘴33而分離成第2輥12之旋轉方向之上游側之 部分與下游側之部分,第3喷嘴33之底面亦可直接面向第3 處理空間93a。 第4處理部94包括第4氣體g4之供給部24及第4喷嘴34。 第4氣體g4含有放電生成氣體及添加成分。第4氣體供給部 24包括放電生成氣體之供給部24a及添加成分之供給部 24b 〇 162457.doc •23· 201241490 使用氮(NO作為第4氣體g4之放電生成氣體《添加成分 包含氧(〇2)、氫(H2)、或飽和烴氣體或不 飽和烴氣體(CnH2n-2(ng2)、CnH2n(n22))。於第4氣體供給 部24,放電生成氣體中混合有添加成分。藉此,生成第4 氣體g4。 於添加氣體為氧之情形時,第4氣體g4中之氧濃度較佳 為500 ppm〜3000 ppm(體積濃度)。於添加氣體為氫之情形 時,第4氣體g4中之氫濃度較佳為500 ppm〜1〇〇〇〇 ppm(體 積濃度)。作為飽和烴氣體,可列舉甲烷(CH4)、乙烷 (c^6)、丙烷(c#8)、丁烷(C4Hi〇)等。作為不飽和烴氣 體,可列舉乙烯(C#4)、乙炔((:汨2)等。第4氣體g4中之飽 和烴氣體或不飽和烴氣體之濃度較佳為100 ppm〜1⑼⑻ ppm(體積濃度)。 於第4氣體供給部24連接有第4喷嘴34。第4噴嘴34設置 於被處理膜9之三角形狀之折回部分外之内部。第4喷嘴34 沿處理寬度方向較長地延伸, 面朝向上方且前端逐漸變細。 出口面向輥間間隙94a。間隙 而某種程度上閉塞。來自第4 ’並且與該延伸方向正交之剖乍 slightly widens toward both end portions in the arc direction. The thickness of the first W-space 91a is preferably about 1 mm. The thickness of the 卩 position of the first processing space is preferably, for example, about 1 melon. The second processing space is the widest. The thickness of the 卩 position is preferably, for example, about 1 〇mm. The thickness of the shield member μ may be fixed to the upstream side of the first parent 11 in the direction of rotation and the downstream side of the first nozzle 31, and the bottom surface of the second nozzle 31 is also fixed. The second processing unit 92 includes the supply unit 22 and the second nozzle 32 of the second gas g2. The second gas g2 contains a discharge generating gas, and nitrogen is used as the discharge generating gas. The second nozzle 32 is connected to the second gas supply unit 22. The second nozzle 32 is provided inside the triangular-shaped folded-back portion 9& of the processed film 9. The second nozzle u is The processing width direction extends long, and the cross section orthogonal to the extending direction faces upward and the front end is tapered. The ejection port of the upper end (front end) of the second nozzle 32 faces the inter-roll gap 92a. The lower end of the gap 92a is The second nozzle 32 is blocked to some extent. From the second The second gas g2 of the body supply unit 22 is equalized in the processing width direction by the rectifying unit (not shown) in the second nozzle 32, and then ejected from the discharge port of the second nozzle 32 to the gap 92a. The gas flow of the gas g2 is distributed in the width direction of the processing width. The gap 92a constitutes the second processing space of the second processing unit 92. The reports u and 12 serve as the second processing space of the second processing unit 92. Provided in the second nozzle 32, a temperature control path (a second gas temperature adjustment 162457.doc -20-201241490 mechanism) is provided in the second nozzle 32. The temperature control medium such as water passes through the second nozzle 32. The temperature adjustment path can be used to adjust the temperature of the second nozzle 32, and even the second gas can be adjusted. The set temperature of the second nozzle 32 is lower than the set temperature of the first nozzle 31, preferably lower. The condensing temperature of the acrylic acid (polymerizable monomer). The closing member 51 is disposed between the rolls n and 12 which are higher than the second processing space 92a. The closing member 51 is separated from the second nozzle by the second processing space 92 & The 32-way occluding member 51 extends long in the processing width direction and is orthogonal to the I extending direction The profile is tapered toward the lower front end. The occlusion member". The second processing space 92a is closed. The fourth processing space and the second processing space are connected to each other via the lower end (front end) of the blocking member 51 facing the end of the second processing space 92a by the blocking member 51 and the gap between the first roller 11 and the second processing space. . A nozzle having the same structure as that of the second nozzle 32 may be used as the closing member 51, and the second nozzle 32 may be vertically reversed, or the second gas g2 may be ejected from the nozzle 51. The third processing unit 93 includes a third gas supply unit 23 and a third nozzle 33 . The third gas supply unit 23 supplies the third gas enthalpy to the third nozzle 33. The third gas g3 contains the same gas 1 as the first gas gl, and the third gas g3 contains a polymerizable monomer and a carrier gas. As the polymerizable monomer, the olefinic acid AA is used. Nitrogen (N2) is used as a carrier gas. Although the detailed illustration is omitted, the third gas supply unit 23 of the Coix seed contains a vaporizer. In the gasifier, the liquid acrylic acid is rolled in a carrier gas. The gasification can be either a foaming method or a broadcasting method, and a third gas can be produced by mixing the vaporized acrylic acid with a carrier gas.笙^ μ 8 The first gas supply unit 21 and the third gas enthalpy supply unit 23 may also include a source of acrylic acid for the sputum >&&&& I62457.doc -21. 201241490 The third gas supply unit 23 is connected to the third nozzle 33 via the gas path 23c. The third nozzle 33 is disposed above the second roller 12 . The third nozzle 33 extends long in the processing width direction and has a certain width in the circumferential direction of the second roller 12 (left and right in Fig. 1). A discharge port is provided on the lower surface of the third nozzle 33. The discharge port is formed to be distributed over a wide range (processing width direction and roll circumferential direction) of the lower surface of the third nozzle 33. The discharge surface (lower surface) of the third nozzle 33 faces the film 9 to be processed on the second roller 12. The third gas g3 from the third gas supply unit 23 is supplied to the third nozzle 33 via the third gas supply line 23c, and is normalized by the rectifying unit (not shown) in the third nozzle 33. The discharge port of the third nozzle 33 is ejected. The discharge gas stream of the third gas g3 is a gas stream uniformly distributed in the processing width direction. The temperature control mechanism in which the gas passage 23c and the third nozzle 33 are provided with a temperature adjustment mechanism (not shown) gas passage 23c includes a heating belt or the like. The temperature adjustment mechanism of the third nozzle 33 includes a temperature adjustment path through the temperature adjustment water. The set temperature of the gas path 23c and the third nozzle 33 is higher than the condensation temperature of acrylic acid. Thereby, it is possible to prevent the acrylic acid from being condensed in the gas path 23c or the nozzle 31 before being ejected from the nozzle 33. The shielding member 43 is provided at the bottom of the third nozzle 33. The shielding member 43 has an arcuate cross section along the circumferential direction of the second roller 12, and extends in substantially the same length as the roller 12 in the processing width direction. Curved plate shape. Both ends of the arcuate direction (left and right in Fig. i) of the shielding member 43 extend toward the circumferential direction of the second roller 12 from the third nozzle. The circumferential direction of the circular arc direction (left and right in Fig. 1) of the shielding member 43 is, for example, about 240 to 300 mm. The end portion of the upstream side (left in the middle) of the rotation direction of the roller 12 of the shielding member 43 abuts or approaches the side portion of the closing member η. The downstream end of the rotation direction of the roller 12 of the shielding member 43 is 162457.doc -22-201241490 (the right side in FIG. 1) is abutted or close to the occluding member 52 described below between the shielding member 43 and the second roller 12. A third processing space 93a is formed. The second roller 12 is provided as a forming portion of the third processing space 93a of the third processing unit 93. The third processing space 93a has a space in a circular arc shape along the circumferential surface of the upper side of the second roller 12. The discharge port on the lower surface of the third nozzle 33 passes through the shielding member 43 and communicates with the third processing space 93a. The third processing space 93a is extended further to both sides in the circumferential direction of the second roller 12 than the third nozzle 33 by the shielding member 43. In Fig. 1, the end portion on the left side of the third processing space 93 & is connected to the second processing space 92a via a gap between the blocking member 51 and the parent 12. The end portion on the right side of the third processing space 93a in Fig. 1 is connected to the gap between the closing member 52 and the roller 12 described below. The third processing space 93a is slightly widened at the center portion in the arc direction (left and right in Fig. 1) as it goes toward both end portions in the arc direction. The thickness of the third processing space 93a is preferably about 1 mm to 10 mm. The thickness of the narrowest portion of the third processing space 93a is preferably, for example, about 1 μm. The thickness of the widest portion of the third processing space 93a is preferably, for example, about 丨〇 mm. The thickness of the third processing space 93a may also be fixed throughout the entire area. The shielding member 43 may be separated into a portion on the upstream side and a downstream side in the rotation direction of the second roller 12 with the third nozzle 33 interposed therebetween, and the bottom surface of the third nozzle 33 may directly face the third processing space 93a. The fourth processing unit 94 includes a supply unit 24 and a fourth nozzle 34 of the fourth gas g4. The fourth gas g4 contains a discharge generating gas and an additive component. The fourth gas supply unit 24 includes a supply unit 24a for generating a discharge gas and a supply unit 24b for adding components. 〇162457.doc • 23· 201241490 Use of nitrogen (NO as a discharge gas of the fourth gas g4) "Additional component contains oxygen (〇2 Hydrogen (H2), or a saturated hydrocarbon gas or an unsaturated hydrocarbon gas (CnH2n-2 (ng2), CnH2n (n22)). In the fourth gas supply unit 24, an additive component is mixed in the discharge generating gas. The fourth gas g4 is generated. When the additive gas is oxygen, the oxygen concentration in the fourth gas g4 is preferably 500 ppm to 3000 ppm (volume concentration). When the additive gas is hydrogen, the fourth gas g4 is used. The hydrogen concentration is preferably 500 ppm to 1 〇〇〇〇 ppm (volume concentration). Examples of the saturated hydrocarbon gas include methane (CH4), ethane (c^6), propane (c#8), and butane ( C4Hi〇), etc. Examples of the unsaturated hydrocarbon gas include ethylene (C#4) and acetylene ((: 汨2). The concentration of the saturated hydrocarbon gas or the unsaturated hydrocarbon gas in the fourth gas g4 is preferably 100 ppm. 〜1(9)(8) ppm (volume concentration) The fourth nozzle 34 is connected to the fourth gas supply unit 24. The fourth nozzle 34 is placed at the The inside of the folded portion of the triangular shape of the film 9. The fourth nozzle 34 extends long in the processing width direction, and the surface faces upward and the front end is tapered. The outlet faces the inter-roll gap 94a. The gap is somewhat occluded. Section from the 4th 'and orthogonal to the extension direction

162457.doc • 24- 201241490 於第4噴嘴34内’設置有未圖示之調溫路(第4氣體調温 機構)。水等調溫媒體通過第4喷嘴34内之調溫路。藉此, 可對第4喷嘴34進行調溫,甚至可調節第4氣體以之喷出溫 又第4噴嘴34之设定溫度低於第3喷嘴33之設定溫度,較 佳為低於丙烯酸(聚合性單體)之凝縮溫度。 於較第4處理空間94a更上側之輥12、13彼此間配置有閉 塞構件52。閉塞構件52隔著第4處理空間94a而與第4喷嘴 34對向。閉塞構件52於處理寬度方向較長地延伸,並且與 &quot;亥延伸方向正交之剖面朝向下方且前端逐漸變細。閉塞構 件52之下端(前端)面向第4處理空間94a。第4處理空間“a 之上端部藉由閉塞構件52而某種程度上閉塞。經由閉塞構 件52與第2輥12之間之間隙,而使第3處理空間93&amp;與第4處 理空間94a連通《經由閉塞構件52與第3輥此間之間隙, 而使第4處理空間94a與第3輥13之上側之外部空間相連。 亦可使用與第4喷嘴34相同構造之喷嘴作為閉塞構件52, 且使其與第4喷嘴34上下反轉地設置,亦可自該喷嘴52噴 出第2氣體g2。 以下,關於藉由上述構成之膜表面處理裝置丨而對被處 理膜9進仃表面處理之方法、甚至製造偏光板之方法進行 說明。 [支持步驟、搬送步驟] 將包含TAC膜之被處理膜9纏繞於支持部1〇之主輥u〜i3 及導輥16、17上。 使輥11 13向圖1中之順時針方向旋轉,將被處理膜$按 162457.doc -25- 201241490 第3輥13之順序向圖丨中大致右方向 照第1輥11 '第2輥12 搬送。 [第1處理步驟] 第1處理部91係將第1氣體gl自供給部21供給至喷嘴31。 將該第1氣體gl自喷嘴31喷出至第1處理空間91ae糾氣體 gl接觸第1處理空間91a内之被處理膜9之表面。藉此,如 圖3⑷所示,第i氣體gl中之丙烯酸單體凝縮並附著於被處 里膜9 #而,;^被處理膜9之表面形成包含丙稀酸單體之 第1凝縮層83 »帛1處理空間91a内之過半之第(氣體y沿著 被處理膜9之搬送方向而向第2處理空間92a之側流動。藉 由遮蔽構件41可抑制或防止第1氣體gl向外部漏出,且可 確保丙烯酸對被處理膜9之附著量。 [第2處理步驟] 隨著第1輥11之旋轉,經過上述第丨處理步驟之被處理膜 9向第2處理空間92a搬送。第2處理部92係將第2氣體g2自 供給部22供給至喷嘴32。將該第2氣體g2自喷嘴32喷出至 第2處理空間92a。同時,將電力供給至輥12,於第2處理 空間92a内生成大氣壓附近之放電,從而將放電生成氣體 之氣電漿化。使該氮電漿接觸第2處理空間92a内之被處理 膜9之表面。藉此,如圖3(b)所示,上述第1凝縮層83之丙 稀酸單體電漿聚合,從而於被處理膜9之表面形成包含聚 丙稀酸之第1電漿聚合膜81。聚丙烯酸與TAC之親和性良 好’且與TAC之表面分子充分地反應而密接。特別是因第 1氣體gl及第2氣體g2中不含上述添加成分,故可提高第1 162457.doc •26· 201241490 電漿聚合膜81之聚丙烯酸之純度,且可充分地確保上述親 和性。被處理膜9藉由導輥16而折回,藉此,於第2處理空 間92a内往復,並由第2處理部92進行2次處理。 [第3處理步驟] 於第2處理空間92a内往復後之被處理膜9隨著第2輥12向 第3處理空間93a搬送。第3處理部93係將第3氣體y自第3 氣體供給部23供給至第3喷嘴33。將該第3氣體g3自第3喷 嘴33喷出至第3處理空間93ae第3氣體g3接觸第3處理空間 93a内之被處理膜9之表面。如圖3(c)所示,該第3氣體中 之丙烯酸單體凝縮並附著於被處理膜9,從而於第1電漿聚 合膜81上進而形成包含丙烯酸單體之第2凝縮層84。第3處 理空間93a内之過半之第3氣體g3沿著被處理膜9之搬送方 向而向第4處理空間94a之側流動。藉由遮蔽構件43可抑制 或防止第3氣體g3向外部漏出,從而可確保丙烯酸之附著 量。 [第4處理步驟] 隨著第2輥12之旋轉,經過上述第3處理步驟之被處理膜 9向第4處理空間94a搬送。第4處理部94係將第4氣體以自 第4氣體供給部24供給至第4喷嘴34。將該第4氣體g4自第4 噴嘴34喷出至第4處理空間94a。於第4處理空間“a内,藉 上述電力供給而生成大氣邀附近之放電。藉此,第4氣 體^之氮及添加成分電聚化’該電聚化之氣體接觸第4處 二間94a内之被處理膜9之表面。藉此,可提高第】電漿 A 膜81之聚合度。另外,如圖3⑷所示,第2凝縮層之 I62457.doc -27· 201241490 丙蝉酸單體電毁聚合1而使包含聚丙缚酸之第2電聚聚 合膜82積層於^電聚聚合膜以上,並形成接著性促進膜 80 *此時,适為上述添加成分分解並與聚丙烯酸結合,藉 此賦予第2電漿聚合膜82疏水性’或第2電漿聚合膜82之交 聯度提高。其結果,可提高接著性促進義之_水性。被 處理臈9藉由導輥17而折回’藉此於第4處理空間94a内往 復,並由第4處理部94進行2次處理。於第4處理空間94&amp;内 往復後之被處理膜9隨著第3輥13搬送並自支持部1〇搬出。 如圖4所示,將藉由膜表面處理裝置丨而進行表面處理後 之被處理膜9經由PVA系接著劑8而與PVA膜7接著,從而製 作偏光板PF»因於被處理膜9之表面形成有接著性促進膜 8〇,故可提高被處理膜9與pVA接著劑8之接著強度。而 且,因接著性促進膜80之第2電漿聚合膜82疏水化或高交 聯度化,故耐水性較高。因此,可提高偏光板之接著耐久 性。另外,第1電漿聚合膜81因聚丙烯酸之純度較高,故 可充力地體現與TAC之親和性。因此,可確保被處理獏9 與接著性促進膜80之密接性。藉此,可提高偏光板卯之品 質。 其次’對本發明之其他實施形態進行說明。於以下實施 形態中對於與已述之形態重複之構成,於圖式中標註相同 符號並省略其說明。 圖5係表示本發明之第2實施形態。於第2實施形態之膜 表面處理裝置1A中,第3處理部93之第3氣體供給部23包括 丙稀酸之供給部23a及添加成分之供給部23b。第4處理部 I62457.doc -28 · 201241490 94之第4氣體供給部24僅供給放電生成氣體(N2)。 丙烯酸供給部23a與第1實施形態(圖1)之第3氣體供給部 23相同’且使液體丙烯酸於載氣(n2)中氣化。 添加成分供給部23b之添加成分包含交聯促進劑。作為 交聯促進劑’可列舉二烯丙基化合物、二胺化合物、縮水 甘油化合物、羥基化合物等。 作為二烯丙基化合物,可列舉二稀丙基胺、馬來酸二稀 丙酯、甲基丙烯酸烯丙酯等。 作為二胺化合物,可列舉乙二胺等。 作為縮水甘油化合物,可列舉烯丙基縮水甘油醚、甲基 丙稀酸縮水甘油等。 作為羥基化合物,可列舉丙烯酸羥乙酯、曱基丙烯酸經 乙酯等。 添加成分供給部23b包含氣化器。藉由該氣化器而使上 述添加成分於載氣中氣化。氣化既可為擠出方式,亦可為 起泡方式。作為載氣,使用氮(N2) ^第3氣體供給部23係 將經氣化之添加成分混合至經氣化之丙烯酸中。或者,亦 可於液體之丙烯酸中混合液體之添加成分,並使該混合液 於載氣中氣化。藉此,生成第3氣體g3。第3氣體g3包含丙 稀酸之蒸氣、上述添加成分之蒸氣、及載氣(NO。第3氣 體g3中之丙烯酸與添加成分之重量調配比較佳為(丙稀 酸):(添加成分)=99: 1~70:30左右。 氣體路23c及第3噴嘴33之設定溫度較佳為高於丙稀酸及 添加成分之凝縮溫度。藉此’可防止丙烯酸及添加成分於 162457.doc -29- 201241490 自第3噴嘴23噴出之前於氣體路23c或第3噴嘴33内凝縮。 輥11 ' 12、13之設定溫度較佳為低於丙烯酸及添加成分 之凝縮溫度。 第4喷嘴34之設定溫度較佳為低於丙烯酸及添加成分之 凝縮溫度。 第2實施形態之膜表面處理裝置1A係如圖6(幻所示,於 第1處理部91中,在被處理膜9之表面形成第丨凝縮層83(第 1處理步驟),繼而,如圖6(b)所示,於第2處理部Μ中使第 1凝縮層83電聚聚合從而形成第丨電聚聚合膜81(第2處理步 驟)。其後,於第3處理部93中,將第3氣體g3自第3喷嘴33 喷出至第3處理空間93a(第3處理步驟)。藉此,如圖6⑷所 不’第3氣體g3中之氣化成分(丙烯酸+添加成分)凝縮,並 附著於被處理膜9, _於第聚合膜81上進一步形成 第2凝縮層86。第2凝縮層86包含丙烯酸單體與添加成分 (交聯促進劑)之混合液。 繼而’於第4處理部94中,將第4氣體g4自第4喷嘴3心 出至第4處理空間94a並電漿化,對第2凝縮層⑼照射氮, 製(第4處理步驟)。藉此,第】電襞聚合膜以聚合心 高。-另外,如圖6⑷所示,認為第2凝縮層%中之丙稀酸」 體經電毁聚合,從而使包含聚丙稀酸之第2電聚聚合㈣ 積層於第If ^合膜81上’並^聯促㈣進行^ 合,使第2電椠聚合膜85之聚丙缔酸交聯。進而,認為* 據交聯促㈣之龍,聚㈣酸對接著劑8之反應性⑻ 性)得到促進。 162457.doc -30- 201241490 藉此’形成包含2層聚合膜81、85之接著性促進膜8〇 β 因該接著性促進膜80之表層之第2電漿聚合膜85為交聯構 造’故而可提高接著性促進膜80之耐水性。進而,藉由上 述添加成分’而可提高接著性促進膜80與接著劑8之接著 強度。其結果’可提高偏光板之接著耐久性。 本發明並不限定於上述實施形態,可於不脫離其主旨之 範圍内進行各種改變。 例如,亦可將氧、氫、飽和烴氣體、或不飽和烴氣體作 為第3氣體g3之添加成分。亦可將交聯促進劑作為第4氣體 g4之添加成分。 於將添加成分添加至第3氣體g3中之情形時,亦可將第3 氣體g3之聚合性單體與添加成分自相互不同之喷嘴喷出。 於將添加成分添加至第4氣體g4中之情形時,亦可將第4 氣體g4之放電生成氣體與添加成分自相互不同之喷嘴喷 出。 亦可使用甲基丙烯酸 '衣康酸、馬來酸等代替丙烯酸而 作為第i氣體gl及第3氣體g3之聚合性單體。亦可使用Μ、 Μ稀有《代㈣而作為載氣。亦可使等稀 有氣體代替N2而作為放電生成氣體。 亦可同時進行第丨處理步驟與第 丹理步驟。亦可自第1 喷嘴31將第1氣體“直接導入 按等入至第2處理空間92a而電漿 化。第1氣體gl中之栽氣亦可兼作第 體。 孔Η录作第之放電生成氣 162457.doc -31 - 201241490 亦可同時進行笛 咕峨 弟3處理步驟與第4處理步驟。亦可自第3 將第3氣體g3直接導入至第4處理空間94a而電漿 化。第3氣體g3令 體。 '^載氣亦可兼作第4氣體g4之放電生成氣 ;實施形態(圖1)中’第1氣體供給部21與第3氣體供 給部2 3亦可句合&amp;、s 通之丙烯酸供給部。於第2實施形態(圖 )第1氣體供给部21與丙烯酸供給部23a亦可包含共通 之丙烯酸供給部。 於第1實施形態(圖U中,第1氣體供給部21之載氣源、 第2氣體供給部22、第3氣體供給部23之載氣源、及第4氣 體供給部24之放電氣體供給部24a亦可包含共通之氮供給 源。於第2實施形態(圖5)中,第i氣體供給部21之载氣源、 第2氣體供給部22、第3氣體供給部23之載氣源、及第4氣 體供給部24亦可包含共通之氮供給源。 被處理膜9之主要成分並不限定於TAC,亦可為聚丙烯 (PP)、聚乙烯(PE)、環烯烴聚合物(c〇p)、環烯烴共聚物 (coc)、聚對苯二甲酸乙二酯(PET)、聚曱基丙烯酸甲酯 (PMMA)、聚醯亞胺(PI)等。 本發明並不限定於偏光板用保護膜之表面處理,可應用 於在各種樹脂膜上形成聚合性單體之聚合膜之處理。 [實施例1 ] 以下對實施例進行說明,但本發明並不限定於 、人卜貫施 例。 162457.doc -32· 201241490 所Μ—置如較表面處理 裝置】之尺寸構成如下。 〈衣面處理。 =、12、U之處理寬度方向之轴長:39。_ ' 12、丨3之直徑·· 320 mm 喷嘴31〜34之喷出寬度:300 mm 遮蔽構件41、43之圓弧方向之周長:275 mm 第1處理空間9U之厚度:於整個區域5_(固定) 第2處理空間92a之最窄部之厚度:1咖 第3處理空間93a之厚度:於整個區域5 mm(固定) 第4處理空間94a之最窄部之厚度:1 mm 使用TAC膜作為被處理膜9。TAC膜9之寬度為325 _。 TAC膜9之搬送速度設為3〇 m/min。 輥11〜13之溫度、甚至TAC獏9之溫度設定為4〇t&gt;c β 電源對於中央之輥電極12之供給電力為30丨5 w(將450 V、6.7 A之直流進行高頻轉換)。將該電力之一半(15〇7 5 W)消耗於輥電極11、12間之電漿放電,剩下的一半 (1507.5 W)消耗於輥電極12、13間之電漿放電^輥電極 11、12間之施加電壓及輥電極12、13間之施加電壓均為 18.1 kV。 [第1處理步驟] 於第1處理部91中’使第1氣體gl接觸TAC膜9。 使用丙烯酸作為第1氣體gl之聚合性單體,使用氮(N2) 作為載氣° •33- 162457.doc 201241490 第1氣體供給部21之氣化器之溫度設為i4(TC。 第1氣體gl之載氣(N2)之流量、甚至第1氣體gi(丙烯酸 +N〇之流量設為4〇 Slme第1氣體gl中之丙烯酸流量為7 5 g/min。 第1噴嘴31之溫度甚至第1氣體gl之喷出溫度設定為 75〇C。 [第2處理步驟] 其次’於第2處理部92中,將第2氣體g2電漿化並使之接 觸TAC膜9。 使用氮(N2)作為第2氣體g2。第2氣體g2之流量設為20 slm。 第2喷嘴32之溫度甚至第2氣體g2之溫度設定為4〇。〇。 [第3處理步驟] 其次,於第3處理部93中,使第3氣體g3接觸TAC膜9。 使用丙烯酸作為第3氣體g3之聚合性單體,使用氮(n2) 作為載氣。 第3氣體供給部23之氣化器之溫度設定為i4〇«c。 第3氣體g3之載氣(N2)之流量、甚至第3氣體g3(丙烯酸 +N2)之流量設定為4〇 sim。第3氣體g3中之丙烯酸流量為 7.5 g/min。第3氣體g3中之添加成分量為〇。 第3喷嘴33之溫度甚至第3氣體g3之喷出溫度設定為 75〇C 〇 [第4處理步驟] 162457.doc -34- 201241490 其次’於第4處理部94中’將第4氣體g4電漿化並使之接 觸TAC膜9。 使用氮(NO作為第4氣體g4之放電生成氣體,使用〇2作 為添加成分。第4氣體g4中之N2之流量設為20 slm。第4氣 體g4中之〇2之流量設為20 seem。第4氣體g4中之02之濃度 為1000 ppm。第4喷嘴34之溫度甚至第4氣體g4之溫度設定 為 40°C。 於表面處理後之TAC膜9之被處理面上塗佈接著劑8,並 使之與PVA膜7貼合。作為接著劑8,使用將(A)聚合度5〇〇 之PVA 5 wt%水溶液與(B)叛曱基纖維素鈉2 wt%水溶液混 合而成之水溶液。(A)及(B)之混合比設為(A):(B)=2〇: !。 接著劑之乾燥條件設為80°C、5分鐘。 於PVA膜7之相反側之面上,藉由與上述相同之接著劑 而貼合經驗化處理之TAC膜《藉此,製作複數個3層構造 之偏光板樣本。偏光板樣本之寬度設為25 mm。 [初期接著強度] 於接著劑8硬化後,對於未經過下述濕熱處理之偏光板 樣本,測定被處理TAC膜9與PVA膜7之接著強度(稱為「初 期接著強度」)。測定方法係依據浮動輥法(JIS Κ6854)β 結果為’ 5個測定值之平均值為9.6 N/25 mm。 [耐久接著強度] 對於剩餘之偏光板樣本,於接著劑8硬化後,進行濕熱 處理。將濕熱處理槽之内部設為60°c、96% RH之高溫高 162457.doc -35- 201241490 濕度環境,將偏光板樣本於該濕熱處理槽内留置丨小時。 其後,將偏光板樣本自濕熱處理槽取出,於室溫下冷卻15 分鐘。然後,藉由與上述初期接著強度相同之浮動輥法 (JIS Κ6854)而測定被處理丁AC膜9與?¥八膜7之接著強度(稱 為「耐久接著強度」)^結果為,5個測定值之平均值為91 N/25 mm。因此,可確認即便暴露於濕熱環境下亦可維持 接著強度。 進而,於第4處理步驟中將第4氣體g4中之〇2濃度設為與 上述不同之值而進行TAC膜之處理,對於使用有該TAC膜 之偏光板樣本,測定耐久接著強度,可知,若仏濃度低於 500 ppm,則耐久接著強度下降,無法獲得所期望之效 果。若〇2濃度超過3000 ppm,則不僅耐久接著強度不降而 且連初期接著強度亦下降》認為若〇2濃度超過3〇〇〇 ppm, 則丙稀酸之聚合反應本身受到阻礙。 [實施例2] 實施例2係於第4處理步驟中,將第4氣體g4中之添加成 分設為H2 ’將其流量設為40 sccm。第4氣體g4中之η〗濃度 為2000 ρρπ^除此以外之處理條件係設為與實施例㈠目 同。表面處理後之偏光板樣本之製作程序、及初期接著強 度以及耐久接著強度之測定程序均與實施例丨相同。初期 接著強度為9.8 N/25 mm,耐久接著強度為7 2 Ν/25 因此,可確認,即便暴露於濕熱環境下亦可維持接著強 度。 I62457.doc -36- 201241490 [實施例3] 實施例3係於第4處理舟胁ώ 〜理步驟中,將第4氣體g4中之添加成 分設為H2 ’將其流量設a丨 馮10〇 sccm。第4氣體g4中之Η2濃 度為5000 ppm。除此以外声 卜之處理條件係設為與實施例1相 同。表面處理後之偏弁姑样+A丨 箱九板樣本之製作程序、及初期接著強 度及对久接著強度之測定程序均與實 接 因 施例1相同。初期 著強度為9.8 N/25 mrn 耐久接著強度為8.8 N/25 此’可確認即便暴露於濕熱環境下亦可維持接著強度。 [實施例4] 實施例4係於第4處理步驟中,將第4氣體^中之添加成 分設為h2’將其流量設為16〇 scem。第4氣體§4中之化濃 度為麵啊。除此以外之處理條件㈣與實施制目 同。表面處理後之偏光板樣本之製作㈣、及初期接著強 度及财久接著強度之測定程序均與實施例1相同。初期接 著強度為9.8 N/25 mm,耐久接著強度為93 N/25 _。因 此,可確認即便暴露於濕熱環境下亦可維持接著強度。 根據實施例2〜4可知,於第4氣體g4中之仏之濃度為2〇〇 PPm〜8000 ppm之範圍内時,隨著h濃度變大,耐久接著 強度增大。進而,於第4處理步驟中,對於將第4氣體以中 之H2濃度設為與上述實施例2〜3不同之值而進行處理之偏 光板樣本,測定耐久接著強度,可知,若^濃度低於5〇〇 ppm,則耐久接著強度下降,無法獲得所期望之效果。於 H2濃度為8000 ppm以上之範圍内時,即便改變%濃度耐久 162457.doc •37- 201241490 接著強度亦與8000 ppm時為相同程度之大小。因此,接著 耐久性之提高效果飽和。 [實施例5] 實施例5係於第4處理步驟中,將第4氣體g4中之添加成 分設為甲烷,將其流量設為16〇 sccm。第4氣體0中之曱 烷濃度為8000 。除此以外之處理條件係設為與實施例 1相同。表面處理後之偏光板樣本之製作程序、及初期接 著強度及耐久接著強度之測定程序均與實施例1相同。初 期接著強度為9·4 N/25 mm,耐久接著強度為9 〇 N/25 mm。因此,可確認即便暴露於濕熱環境下亦可維持接著 強度。 [實施例6] 實施例6係於第4處理步驟中,將第4氣體g4中之添加成 分設為乙炔,將其流量設為16〇 sccm。第4氣體0中之乙 快浪度為80〇〇 ppm。除此以外之處理條件設為與實施例】 相同。表面處理後之偏光板樣本之製作程序 '及初期接著 強度及耐久接著強度之測定程序均與實施例i相同。初期 接著強度為10.8 N/25 mm,埘久接著強度為i〇 i Mm mm。因此,可確認即便暴露於濕熱環境下亦可維持接著 強度。 表1中匯總表示實施例i〜6之處理條件及測定結果。 162457.doc -38 - 201241490 [表l] 實施例 1 實施例 2 實施例 3 實施例 4 實施例 5 實施例 6 裝置 圖1 圖1 圖1 圖1 圖1 圖1 被處理膜 TAC TAC TAC TAC TAC TAC 膜搬送速度m/min 30 30 30 30 30 30 親溫度deg 40 40 40 40 40 40 第1處 理步驟 第1氣體 N2 slm 40 40 40 40 40 40 AA g/min 7.5 7.5 7.5 7.5 7.5 7.5 氣化器溫度 deg 140 140 140 140 140 140 第1喷嘴溫度 deg 75 75 75 75 75 75 第2處 理步驟 第2氣體N2 slm 20 20 20 20 20 20 第2喷嘴溫度 deg 40 40 40 40 40 40 第3處 理步驟 第3氣體 N2 slm 40 40 40 40 40 40 AA g/min 7.5 7.5 7.5 7.5 7.5 7.5 氣化器溫度 deg 140 .140 140 140 140 140 第3噴嘴溫度 deg 75 75 75 75 75 75 第4處 理步驟 第4氣體 N2 slm 20 20 20 20 20 20 添加成分 氧 氫 氫 氫 甲烷 乙炔 流量seem 20 40 100 160 160 160 濃度ppm 1000 2000 5000 8000 8000 8000 第4喷嘴溫度 deg 40 40 40 40 40 40 電漿條 件 供給直流電壓 V 450 450 450 450 450 450 供給直流電流 A 6.7 6.7 6.7 6.7 6.7 6.7 供給電力 W 3015 3015 3015 3015 3015 3015 輥間施加電壓 kV 18.1 18.1 18.1 18.1 18.1 18.1 評價 初期接著強度N/25mm 9.6 9.8 9.8 9.8 9.4 10.8 耐久接著強度N/25mm 9.1 7.2 8.8 9.3 9.0 10.1 [實施例7] 於實施例7中,使用第2實施形態(圖5)之裝置1A,於第3 處理步驟中,於第3氣體g3中添加添加成分。使用甲基丙 162457.doc -39- 201241490 烯酸烯丙酯作為添加成分。第3氣體g3之載氣(N2)之流 量、甚至第3氣體g3整體之流量為40 slm,第3氣體g3中之 丙烯酸流量為7·5 g/min,第3氣體g3中之曱基丙烯酸烯丙 西曰之流量為〇.375 g/min。第4處理步驟之第4氣體g4設為僅 N2 20 Slm,第4氣體g4中之添加成分量設為〇 ^除此以外之 處理條件设為與實施例丨相同。表面處理後之偏光板樣本 之製作程序 '及初期接著強度及耐久接著強度之測定程序 均與實施例1相同。初期接著強度為10.2 N/25 mm,耐久 接著強度為9.8 N/25 mm。因此,可確認即便暴露於濕熱 環境下亦可維持接著強度。 [實施例8] 於實施例8中,使用第2實施形態(圖5)之裝置1A,於第3 處理步驟中,使用二烯丙基胺作為第3氣體“之添加成 刀第3氣體S3之載氣(N2)之流量、甚至第3氣體g3整體之 流量為40 Slm,第3氣體g3中之丙烯酸流量為7 5 g/min,第 3氣體S3中之乙二胺之流量為〇·375 g/min。除此以外之處 理條件係設為與實施例5相同。表面處理後之偏光板樣本 之製作程序、及初期接著強度及耐久接著強度之測定程序 =實施例1相同《初期接著強度為10」N/25 mm,耐久接 著強度為9.6 N/25 mme因此’可確認即便暴露於濕熱環 境下亦可維持接著強度。 表2中匯總表示實施例7及8之處理條件及測定結果。 162457.doc 201241490 [表2] --_ 實施例7 實施例8 裝置 圖2 圖2 被處理膜 TAC TAC 膜搬送速度m/min 30 30 輥溫度deg 40 40 第1氣體 n2 slm 40 40 第1處理步驟 AA g/min 7.5 7.5 氣化器溫度 deg 140 140 第1喷嘴溫度 deg 75 75 第2處理步驟 第2氣體N2 slm 20 20 第2喷嘴溫度 deg 40 40 n2 slm 40 40 第3氣體 AA g/min 7.5 7.5 第3處理步驟 添加成分 甲基丙稀酸稀丙醋 二烯丙基胺 濃度g/min 0.375 0.375 氣化器溫度 deg 140 140 第3喷嘴溫度 deg 75 75 第4處理步驟 第4氣體N2 slm 20 20 第4喷嘴溫度 deg 40 40 供給直流電壓 V 450 450 電漿條件 供給直流電流 A 6.7 6.7 供給電力 W 3015 3015 輥間施加電壓 kV 18.1 18.1 評價 初期接著強度N/25mm 10.2 10.1 耐久接著強度N/25mm 9.8 9.6 [比較例1] 於比較例1中,第3處理步驟中之第3氣體g3、及第4處理 步驟中之第4氣體g4中之任一者中均未添加添加成分。除 此以外之處理條件係設為與實施例1相同。因此,第3處理 162457.doc -41 · 201241490 步驟之處理條件與第1處理步驟之處理條件相同,第4處理 步驟之處理條件與第2處理步驟相同。表面處理後之偏光 板樣本之製作程序、及初期接著強度及耐久接著強度之測 定程序均與實施例1相同。初期接著強度為10.3 N/25 mm,耐久接著強度為6.2 N/25 mm。因此,若暴露於濕熱 環境下則接著性劣化。 [比較例2] 於比較例2中,於第2處理步驟中之第2氣體以之放電生 成氣體(N2 20 slm)中添加16〇 3_氫_。於第3氣體“及 第4氟體g4中,未添加添加成分。除此以外之處理條件設 為與實施例1相同。表面處理後之偏光板樣本之製作程 序、及初期接著強度及耐久接著強度之測定程序均與實施 例1相同。初 為 5.5 Ν/25 化。 [比較例3] 期接著強度為10.3 Ν/2 5 mm,耐久接著強产 mm。因此,若暴露於濕熱環境下則接著性劣 於比較例3中,於第2處理步驟中之第2氣體以之放電生 成氣體(N2 20 slm)中添加16〇咖氫⑽,且於第*處理步 驟中之第4氣體g4中添加16〇咖讀⑻)作為添加成分。除 此以外之處理條件係設為與實施例處理後之 偏光板樣本之製作程序、及初期接著強度及耐久接著強产 之測定程序均與實施#u相同。初期接著強度為1()3 耐久接著強度為5·9 N/25 mme因此,料露於濕熱 環境下則接著性劣化^ ”'… 162457.doc •42- 201241490 表3中匯總表示比較例1〜3之處理條件及測定結果。根據 以上之實施例及比較例可確認,藉由不向第1處理步驟之 第1氣體gl及第2處理步驟之第2氣體g2中添加添加成分, 且在第3處理步驟之第3氣體g2、或第4處理步驟之第4氣體 g2中添加添加成分,而可提高TAC膜9之接著耐久性。 [表3] —-~—_ 比較例1 比較例2 比較例3 被處理膜 TAC TAC TAC 膜搬送速度m/min 30 30 30 輥溫度deg 40 40 40 第1氣體 n2 slm 40 40 40 第1處理步驟 AA g/min 7.5 7.5 7.5 氣化器溫度 deg 140 140 140 第1喷嘴溫度 deg 75 75 75 n2 slm 20 20 20 第2處理步驟 第2氣體 添加成分 - 氫 氫 流量seem - 160 160 第2喷嘴溫度 deg 40 40 40 第3氣體 n2 slm 40 40 40 第3處理步驟 AA g/min 7.5 7.5 7.5 氣化器溫度 deg 140 140 140 第3喷嘴溫度 deg 75 75 75 n2 slm 20 20 20 第4處理步驟 第4氣體 添加成分 - - 氫 流量seem - - 160 第4噴嘴溫度 deg 40 40 40 供給直流電壓 V 450 450 450 電漿條件 供給直流電流 A 6.7 6.7 6.7 供給電力 W 3015 3015 3015 輥間施加電壓 kV 18.1 18.1 18.1 評價 初期接著強度N/25 mm 10.3 10.3 10.3 财久接著強度N/25mm 6.2 5.5 5.9 162457.doc •43· 201241490 [產業上之可利用性] 本發明可應用於例如平板顯*器(FpD,Fiat p Display)之偏光板之製造。 ane 【圖式簡單說明】 圖1係以解說的方式表示本發明 處理裝置之侧視圖。 ^貫施㈣之膜表面 圖2係上述膜表面處理裝置之主要部分之立體圖。 圖3係表示第1實施形態之表面 牛4里步驟’⑷係第1處理 =後之破處理膜之剖面圖,(b)_2處理”後之 理膜之剖面圖,⑷係第3處理步驟後之被處理膜之叫面 圖,(d)係第4處理步驟後之被處理臈之剖面圖。 圖4係表示偏光板之一部分之剖面圖。 圖5係以解說的方式表示本發明之第2實 處理裝置之側視圖。 〈膜表面 步==第2實施形態之表面處理步驟,⑷係第1處理 被處理膜之剖面圖,係第2處理步驟後之被處 理膜之拍圖,⑷係第3處理步驟後之被處理膜之剖面 圖’⑷係第4處理步驟後之被處理膜之剖面圖。 【主要元件符號說明】 1 膜表面處理裝置 7 PVA膜 8 PVA接著劑 9 被處理膜 10 支持部(搬送機構) 162457.doc 201241490 11 第1輥 12 第2輥 13 第3輥 16 前段導輥 . 17 後段導輥 21 第1氣體供給部 &quot; 21c 第1氣體供給線 22 第2氣體供給部 23 第3氣體供給部 23a 丙烯酸供給部(聚合性單體供給部) 23b 添加成分供給部 23c 第3氣體供給線 24 第4氣體供給部 24a 放電氣體供給部 24b 添加成分供給部 31 第1喷嘴 32 第2喷嘴 33 第3喷嘴 ’ 34 第4喷嘴 -. 41、43 遮蔽構件 51 ' 52 閉塞構件 80 接著性促進膜 81 第1電漿聚合膜 82 第2電漿聚合膜 162457.doc -45- 201241490 83 第1凝縮層 84 第2凝縮層 85 第2電漿聚合膜 86 第2凝縮層 91 第1處理部 91a 第1處理空間 92 第2處理部 92a 第2處理空間(第1、 第2輥間之間隙) 93 第3處理部 93a 第3處理空間 94 第4處理部 94a 第4處理空間(第2、 第3輥間之間隙) gl 第1氣體 g2 第2氣體 g3 第3氣體 g4 第4氣體 PF 偏光板 162457.doc ·46·162457.doc • 24-201241490 A temperature control path (fourth gas temperature adjustment mechanism) (not shown) is provided in the fourth nozzle 34. The temperature control medium such as water passes through the temperature regulation path in the fourth nozzle 34. Thereby, the fourth nozzle 34 can be tempered, and even the fourth gas can be adjusted to eject the temperature, and the set temperature of the fourth nozzle 34 is lower than the set temperature of the third nozzle 33, preferably lower than acrylic acid ( Condensation temperature of the polymerizable monomer). The closing members 52 are disposed between the rolls 12 and 13 which are higher than the fourth processing space 94a. The closing member 52 faces the fourth nozzle 34 via the fourth processing space 94a. The occluding member 52 extends long in the processing width direction, and the cross section orthogonal to the &quot;Hai extension direction faces downward and the front end tapers. The lower end (front end) of the blocking member 52 faces the fourth processing space 94a. The upper end portion of the fourth processing space "a is closed to some extent by the closing member 52. The third processing space 93 &amp; communicates with the fourth processing space 94a via the gap between the blocking member 52 and the second roller 12. The fourth processing space 94a is connected to the outer space on the upper side of the third roller 13 via the gap between the blocking member 52 and the third roller. A nozzle having the same configuration as that of the fourth nozzle 34 may be used as the blocking member 52, and The fourth nozzle 34 is vertically reversed, and the second gas g2 can be ejected from the nozzle 52. Hereinafter, the method for treating the surface of the film to be processed 9 by the film surface treatment device 上述 having the above configuration Further, a method of manufacturing a polarizing plate will be described. [Supporting Step, Transfer Step] The film to be processed 9 containing the TAC film is wound around the main rolls u to i3 of the support portion 1 and the guide rolls 16, 17. In the clockwise direction in FIG. 1, the film to be processed is conveyed in the order of the third roller 13 of 162457.doc -25 - 201241490 to the first roller 11 'the second roller 12 in the substantially right direction in the drawing. 1 processing step] The first processing unit 91 supplies the first gas gl from the supply unit 21 The first gas gl is ejected from the nozzle 31 to the first processing space 91ae, and the correction gas gl contacts the surface of the film 9 to be processed in the first processing space 91a. Thereby, as shown in Fig. 3 (4), the i The acrylic monomer in the gas gl is condensed and adhered to the inner film 9#; the surface of the treated film 9 forms a first condensed layer 83 containing an acrylic monomer, and more than half of the inside of the treatment space 91a. First, the gas y flows toward the second processing space 92a along the transport direction of the film to be processed 9. The shielding member 41 can suppress or prevent the first gas gl from leaking to the outside, and can secure the acrylic to the processed film 9 [Second Processing Step] As the first roller 11 rotates, the processed film 9 that has passed through the second processing step is transported to the second processing space 92a. The second processing unit 92 sets the second gas g2. The supply unit 22 is supplied to the nozzle 32. The second gas g2 is discharged from the nozzle 32 to the second processing space 92a. At the same time, electric power is supplied to the roller 12, and discharge in the vicinity of the atmospheric pressure is generated in the second processing space 92a. The gas of the discharge generating gas is plasmaized, and the nitrogen plasma is brought into contact with the second processing space 92a. The surface of the film 9 to be treated. Thereby, as shown in FIG. 3(b), the acrylic acid monomer of the first condensation layer 83 is plasma-polymerized to form a surface containing the polyacrylic acid on the surface of the film to be treated 9. (1) The plasma polymerization film 81. The polyacrylic acid has good affinity with TAC, and is sufficiently reacted with the surface molecules of TAC to be in close contact with each other. In particular, since the first gas gl and the second gas g2 do not contain the above-mentioned additive component, they can be improved. 1 162 457. doc • 26· 201241490 The purity of the polyacrylic acid of the plasma polymerization film 81 is sufficient to ensure the above affinity. The film to be processed 9 is folded back by the guide roller 16, whereby it reciprocates in the second processing space 92a, and is processed twice by the second processing unit 92. [Third processing step] The film to be processed 9 which has been reciprocated in the second processing space 92a is transported to the third processing space 93a in accordance with the second roller 12. The third processing unit 93 supplies the third gas y from the third gas supply unit 23 to the third nozzle 33 . The third gas g3 is discharged from the third nozzle 33 to the third processing space 93ae, and the third gas g3 contacts the surface of the film 9 to be processed in the third processing space 93a. As shown in Fig. 3(c), the acrylic monomer in the third gas is condensed and adhered to the film to be treated 9, and a second condensed layer 84 containing an acrylic monomer is further formed on the first plasma polymer film 81. The third gas g3 which is more than half of the third processing space 93a flows toward the fourth processing space 94a along the conveying direction of the film to be processed 9. The shielding member 43 can suppress or prevent the third gas g3 from leaking to the outside, thereby ensuring the adhesion amount of acrylic acid. [Fourth Processing Step] As the second roller 12 rotates, the film 9 to be processed which has passed through the third processing step is transported to the fourth processing space 94a. The fourth processing unit 94 supplies the fourth gas to the fourth nozzle 34 from the fourth gas supply unit 24. This fourth gas g4 is discharged from the fourth nozzle 34 to the fourth processing space 94a. In the fourth processing space "a, a discharge in the vicinity of the atmosphere is generated by the power supply. Thereby, the nitrogen of the fourth gas and the additive component are electropolymerized." The gas of the electricity is contacted with the second chamber 94a of the fourth place. The surface of the film 9 to be treated therein, whereby the degree of polymerization of the first plasma A film 81 can be increased. Further, as shown in Fig. 3 (4), the second condensation layer I62457.doc -27· 201241490 a propionate monomer The second electropolymerization film 82 containing the polyacrylic acid is laminated on the electropolymerization film to form the adhesion promoting film 80. In this case, the additive component is decomposed and bonded to the polyacrylic acid. Thereby, the degree of crosslinking of the second plasma polymer film 82 or the second plasma polymer film 82 is increased. As a result, the adhesion promoting water can be improved. The treated crucible 9 is folded back by the guide roller 17. 'There is a reciprocation in the fourth processing space 94a, and the fourth processing unit 94 performs the processing twice. The processed film 9 that has been reciprocated in the fourth processing space 94&amp; is transported along with the third roller 13 and is self-supporting. 1〇Remove. As shown in Fig. 4, the surface treatment is performed by the film surface treatment device. The treatment film 9 is adhered to the PVA film 7 via the PVA-based adhesive 8 to form the polarizing plate PF». Since the adhesion promoting film 8 is formed on the surface of the film to be processed 9, the film to be treated 9 and the pVA adhesive can be improved. In addition, since the second plasma polymerization film 82 of the adhesion promoting film 80 is hydrophobized or highly crosslinked, the water resistance is high. Therefore, the durability of the polarizing plate can be improved. (1) The plasma polymerization film 81 has a high purity due to the polyacrylic acid, so that the affinity with the TAC can be remarkably exhibited. Therefore, the adhesion between the treated crucible 9 and the adhesion promoting film 80 can be ensured. In the following embodiments, the configuration of the present invention is the same as the above-described embodiment, and the same reference numerals will be given to the drawings, and the description thereof will be omitted. Fig. 5 shows the present invention. In the film surface treatment apparatus 1A of the second embodiment, the third gas supply unit 23 of the third processing unit 93 includes the supply unit 23a of the acrylic acid and the supply unit 23b of the additive component. The fourth processing unit I62457.doc -28 · 201241490 94 Only the discharge generating gas (N2) is supplied to the fourth gas supply unit 24. The acrylic acid supply unit 23a is the same as the third gas supply unit 23 of the first embodiment (Fig. 1), and the liquid acrylic acid is supplied to the carrier gas (n2). The addition component of the component supply portion 23b contains a crosslinking accelerator. Examples of the crosslinking accelerator include a diallyl compound, a diamine compound, a glycidyl compound, a hydroxy compound, etc. As the diallyl compound, Examples of the dilutepropylamine, diisopropyl propyl maleate, and allyl methacrylate. Examples of the diamine compound include ethylenediamine. Examples of the glycidyl compound include allyl glycidyl ether and Polyacrylic acid glycidol and the like. Examples of the hydroxy compound include hydroxyethyl acrylate and methacrylic acid by ethyl ester. The additive component supply unit 23b includes a vaporizer. The above-mentioned additive component is vaporized in the carrier gas by the vaporizer. Gasification can be either extrusion or foaming. As the carrier gas, nitrogen (N2) is used. The third gas supply unit 23 mixes the vaporized additive component into the vaporized acrylic acid. Alternatively, the liquid addition component may be mixed in the liquid acrylic acid, and the mixture may be vaporized in the carrier gas. Thereby, the third gas g3 is generated. The third gas g3 contains a vapor of acrylic acid, a vapor of the above-mentioned additive component, and a carrier gas (NO. The weight of the acrylic acid and the additive component in the third gas g3 is preferably (acrylic acid): (additional component) = 99: 1~70:30. The set temperature of the gas path 23c and the third nozzle 33 is preferably higher than the condensation temperature of the acrylic acid and the added component, thereby preventing the acrylic acid and the added component at 162457.doc -29 - 201241490 Condensation in the gas path 23c or the third nozzle 33 before ejecting from the third nozzle 23. The set temperature of the rolls 11'12, 13 is preferably lower than the condensation temperature of the acrylic acid and the additive component. The film surface treatment apparatus 1A of the second embodiment is preferably formed on the surface of the film to be processed 9 in the first treatment unit 91 as shown in Fig. 6 (the magical figure). Condensation layer 83 (first processing step), and then, as shown in FIG. 6(b), the first condensation layer 83 is electropolymerized in the second treatment portion to form the second electropolymerization film 81 (second treatment) Step 3) Thereafter, in the third processing unit 93, the third gas g3 is supplied from the third nozzle 33 In the third processing space 93a (third processing step), the vaporized component (acrylic acid + additive component) in the third gas g3 is condensed as shown in Fig. 6 (4), and adheres to the film to be processed 9, The second condensation layer 86 is further formed on the first polymerization film 81. The second condensation layer 86 contains a mixed liquid of an acrylic monomer and an additive component (crosslinking accelerator). Then, in the fourth treatment portion 94, the fourth gas g4 is used. The second nozzle 3 is discharged to the fourth processing space 94a and plasmad, and the second condensed layer (9) is irradiated with nitrogen (the fourth processing step). Thereby, the first electropolymerized film is polymerized to a high height. Further, as shown in Fig. 6 (4), it is considered that the acrylic acid in the second condensation layer % is electro-destructively polymerized, so that the second electropolymerization (IV) containing the polyacrylic acid is laminated on the If-bonding film 81. ^ (4) to carry out the crosslinking of the polyacrylic acid of the second electropolymerization film 85. Further, it is considered that * the reactivity (8) of the poly(tetra) acid to the adhesive 8 is promoted by the cross-linking (4) dragon. 162457.doc -30- 201241490 By this, the formation of the adhesion promoting film 8〇β including the two-layered polymer films 81 and 85 is caused by the adhesion promoting film 80. The second plasma polymerization film 85 of the surface layer has a crosslinked structure. Therefore, the water resistance of the adhesion promoting film 80 can be improved. Further, the adhesion strength of the adhesion promoting film 80 and the adhesive 8 can be improved by the above-mentioned additive component. As a result, the durability of the polarizing plate can be improved. The present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the invention. For example, oxygen, hydrogen, saturated hydrocarbon gas, or The saturated hydrocarbon gas is added as a component of the third gas g3. The crosslinking accelerator may be added as a component of the fourth gas g4. When the additive component is added to the third gas g3, the polymerizable monomer and the additive component of the third gas g3 may be ejected from mutually different nozzles. When the additive component is added to the fourth gas g4, the discharge generating gas and the additive component of the fourth gas g4 may be ejected from mutually different nozzles. Instead of acrylic acid, methacrylic acid 'itaconic acid, maleic acid or the like can be used as the polymerizable monomer of the i-th gas gl and the third gas g3. It is also possible to use Μ and Μ rare "generation (4) as a carrier gas. It is also possible to use a rare gas instead of N2 as a discharge generating gas. It is also possible to perform the second processing step and the third step simultaneously. The first gas may be directly introduced into the second processing space 92a from the first nozzle 31 to be plasma-formed. The planting gas in the first gas gl may also serve as the first body. The hole is recorded as the first discharge generation. Gas 162457.doc -31 - 201241490 It is also possible to simultaneously perform the processing steps 4 and 4 of the flute 3, and the third gas g3 may be directly introduced into the fourth processing space 94a and plasmad from the third. In the embodiment (Fig. 1), the first gas supply unit 21 and the third gas supply unit 23 may be combined with each other. In the second embodiment (Fig.), the first gas supply unit 21 and the acrylic acid supply unit 23a may include a common acrylic acid supply unit. In the first embodiment (Fig. U, the first gas supply unit) The carrier gas source of 21, the second gas supply unit 22, the carrier gas source of the third gas supply unit 23, and the discharge gas supply unit 24a of the fourth gas supply unit 24 may include a common nitrogen supply source. In the form (FIG. 5), the carrier gas source of the i-th gas supply unit 21, the second gas supply unit 22, and the third gas supply unit 23 The carrier gas source and the fourth gas supply unit 24 may include a common nitrogen supply source. The main component of the film to be processed 9 is not limited to TAC, and may be polypropylene (PP), polyethylene (PE), or cycloolefin. Polymer (c〇p), cyclic olefin copolymer (coc), polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), polyimine (PI), etc. The invention is not limited to the surface treatment of the protective film for a polarizing plate, and can be applied to a treatment of forming a polymer film of a polymerizable monomer on various resin films. [Example 1] Hereinafter, examples will be described, but the present invention is not limited thereto. 162457.doc -32· 201241490 The size of the Μ 置 置 置 较 较 较 较 较 较 较 较 较 较 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 衣 12 12 12 12 12 12 '12, diameter of 丨3 · · 320 mm Spray width of nozzles 31 to 34: 300 mm circumference of circular direction of shielding members 41, 43: 275 mm Thickness of first processing space 9U: 5_(in the entire area) Fixed) Thickness of the narrowest portion of the second processing space 92a: 1 thickness of the third processing space 93a: 5 mm over the entire area (Fixed) Thickness of the narrowest portion of the fourth processing space 94a: 1 mm A TAC film was used as the film to be processed 9. The width of the TAC film 9 was 325 _. The transport speed of the TAC film 9 was set to 3 〇 m/min. The temperature of 11 to 13 and even the temperature of TAC 貘 9 is set to 4 〇 t &gt; c β power supply to the central roller electrode 12 is 30 丨 5 w (high frequency conversion of 450 V, 6.7 A DC). One half of the power (15〇7 5 W) is consumed by the plasma discharge between the roller electrodes 11, 12, and the remaining half (1507.5 W) is consumed by the plasma discharge roller electrode 11 between the roller electrodes 12, 13. The applied voltage of 12 and the applied voltage between the roller electrodes 12 and 13 were 18.1 kV. [First Processing Step] The first gas gl is brought into contact with the TAC film 9 in the first processing unit 91. Acrylic acid is used as the polymerizable monomer of the first gas gl, and nitrogen (N2) is used as the carrier gas. • 33-162457.doc 201241490 The temperature of the vaporizer of the first gas supply unit 21 is set to i4 (TC. The flow rate of the carrier gas (N2) of gl, even the flow rate of the first gas gi (acrylic acid + N〇 is set to 4 〇Slme, the flow rate of the acrylic acid in the first gas gl is 7 5 g/min. The temperature of the first nozzle 31 is even The discharge temperature of the gas gl is set to 75 ° C. [Second treatment step] Next, in the second treatment portion 92, the second gas g2 is plasma-formed and brought into contact with the TAC film 9. Nitrogen (N2) is used. The flow rate of the second gas g2 is 20 slm. The temperature of the second nozzle 32 or even the temperature of the second gas g2 is set to 4 〇. [Third processing step] Next, in the third processing unit 93, the third gas g3 is brought into contact with the TAC film 9. Acrylic acid is used as the polymerizable monomer of the third gas g3, and nitrogen (n2) is used as the carrier gas. The temperature of the vaporizer of the third gas supply unit 23 is set to i4. 〇«c. The flow rate of the carrier gas (N2) of the third gas g3, and even the flow rate of the third gas g3 (acrylic acid + N2) is set to 4 〇 sim. The acrylic acid in the third gas g3 The amount of the additive component in the third gas g3 is 〇. The temperature of the third nozzle 33 or even the discharge temperature of the third gas g3 is set to 75 〇C 〇 [fourth processing step] 162457.doc - 34-201241490 Next, 'the fourth gas g4 is plasma-formed and brought into contact with the TAC film 9 in the fourth processing unit 94. Nitrogen is used (NO is used as the discharge generating gas of the fourth gas g4, and 〇2 is used as an additive component. The flow rate of N2 in the fourth gas g4 is 20 slm. The flow rate of 〇2 in the fourth gas g4 is 20 seem. The concentration of 02 in the fourth gas g4 is 1000 ppm. The temperature of the fourth nozzle 34 is even 4 The temperature of the gas g4 is set to 40° C. The adhesive 8 is applied to the surface to be treated of the TAC film 9 after the surface treatment, and is bonded to the PVA film 7. As the adhesive 8, the (A) is used. An aqueous solution of a PVA 5 wt% aqueous solution having a polymerization degree of 5 Å and (B) a bismuth cellulose sodium 2 wt% aqueous solution. The mixing ratio of (A) and (B) is (A): (B) =2〇: ! The drying condition of the subsequent agent was set to 80 ° C for 5 minutes. On the opposite side of the PVA film 7, the TAC film which was subjected to the experience treatment was bonded by the same adhesive as described above. Thus, a plurality of polarized plate samples having a three-layer structure were prepared. The width of the polarizing plate sample was set to 25 mm. [Initial bonding strength] After the adhesive 8 was hardened, the sample was measured for the polarizing plate sample which was not subjected to the following wet heat treatment. The bonding strength of the TAC film 9 and the PVA film 7 is referred to (referred to as "initial bonding strength"). The measurement method was based on the β method of the floating roll method (JIS Κ 6854), and the average value of the five measured values was 9.6 N/25 mm. [Endurance bonding strength] The remaining polarizing plate samples were subjected to a damp heat treatment after the adhesive 8 was hardened. The inside of the wet heat treatment tank was set to a high temperature of 162457.doc -35 to 201241490 in a humidity environment of 60 ° C and 96% RH, and the polarizing plate sample was left in the wet heat treatment tank for 丨 hours. Thereafter, the polarizing plate sample was taken out from the wet heat treatment tank and cooled at room temperature for 15 minutes. Then, the treated butane AC film 9 was measured by the floating roll method (JIS Κ 6854) having the same initial strength as described above. The subsequent strength of the eight film 7 (referred to as "durable bonding strength") ^ was that the average of the five measured values was 91 N/25 mm. Therefore, it was confirmed that the strength was maintained even when exposed to a hot and humid environment. Further, in the fourth processing step, the concentration of ruthenium 2 in the fourth gas g4 is set to a value different from the above, and the TAC film is treated. The durability of the sample of the polarizing plate using the TAC film is measured. If the cerium concentration is less than 500 ppm, the durability and the subsequent strength are lowered, and the desired effect cannot be obtained. If the concentration of 〇2 exceeds 3000 ppm, not only the durability will not decrease, but also the initial strength will decrease. It is considered that if the concentration of 〇2 exceeds 3 〇〇〇 ppm, the polymerization reaction of acrylic acid itself is hindered. [Example 2] In the second processing step, the addition component in the fourth gas g4 was set to H2', and the flow rate thereof was 40 sccm. The concentration of η in the fourth gas g4 is 2000 ρρπ^, and the other processing conditions are the same as in the embodiment (1). The procedure for preparing the polarizing plate sample after the surface treatment, and the measurement procedure for the initial adhesion strength and the durability bonding strength were the same as in the example. In the initial stage, the strength was 9.8 N/25 mm, and the durability was 7 2 Ν/25. Therefore, it was confirmed that the strength was maintained even when exposed to a hot and humid environment. I62457.doc -36-201241490 [Embodiment 3] In the third embodiment, in the fourth step, the additive component in the fourth gas g4 is set to H2', and the flow rate is set to 丨 von 10〇. Sccm. The concentration of ruthenium 2 in the fourth gas g4 was 5000 ppm. The processing conditions of the other sounds were set to be the same as in the first embodiment. After the surface treatment, the preparation procedure of the partial sputum sample + A 箱 box nine plate sample, and the initial splicing strength and the measurement procedure for the long-term strength are the same as those of the first embodiment. The initial strength was 9.8 N/25 mrn and the durability was 8.8 N/25. This confirmed that the strength was maintained even when exposed to a hot and humid environment. [Embodiment 4] In the fourth processing step, the addition component in the fourth gas is set to h2', and the flow rate thereof is set to 16 〇 scem. The concentration of the fourth gas in § 4 is the surface. The other processing conditions (4) are the same as the implementation. The preparation of the surface-treated polarizing plate sample (4), and the initial measurement procedure of the subsequent strength and the long-lasting strength were the same as in the first embodiment. The initial strength is 9.8 N/25 mm and the durability is 93 N/25 _. Therefore, it was confirmed that the bonding strength was maintained even when exposed to a hot and humid environment. According to the examples 2 to 4, when the concentration of ruthenium in the fourth gas g4 is in the range of 2 〇〇 PPm to 8000 ppm, the endurance strength increases as the h concentration increases. Further, in the fourth processing step, the polarizing plate sample which was treated by setting the H 2 concentration in the fourth gas to a value different from that of the above Examples 2 to 3 was measured for the durability of the adhesive, and it was found that the concentration was low. At 5 〇〇 ppm, the durability is lowered and the desired effect is not obtained. When the H2 concentration is in the range of 8000 ppm or more, even if the % concentration is changed, the durability is 162457.doc •37- 201241490 and the strength is the same as that at 8000 ppm. Therefore, the effect of improving the durability is saturated. [Example 5] In the fifth processing step, the additive component in the fourth gas g4 was methane, and the flow rate was 16 〇 sccm. The concentration of decane in the fourth gas 0 was 8000. The processing conditions other than this are the same as in the first embodiment. The procedure for preparing the polarizing plate sample after the surface treatment and the measurement procedure for the initial adhesion strength and the durability bonding strength were the same as in the first embodiment. The initial bonding strength is 9·4 N/25 mm and the durable bonding strength is 9 〇 N/25 mm. Therefore, it was confirmed that the adhesion strength was maintained even when exposed to a moist heat environment. [Example 6] In the fourth processing step, the addition component in the fourth gas g4 was acetylene, and the flow rate was 16 〇 sccm. B of the fourth gas 0 has a fast wave of 80 〇〇 ppm. The processing conditions other than this are the same as those in the embodiment. The procedure for preparing the polarized plate sample after the surface treatment and the measurement procedure of the initial adhesion strength and the durability bonding strength were the same as those in the example i. The initial strength is 10.8 N/25 mm, and the strength is i〇 i Mm mm. Therefore, it was confirmed that the adhesion strength was maintained even when exposed to a moist heat environment. Table 1 shows the processing conditions and measurement results of Examples i to 6. 162457.doc -38 - 201241490 [Table 1] Example 1 Example 2 Example 3 Example 4 Example 5 Example 6 Apparatus Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Figure 1 Processed film TAC TAC TAC TAC TAC TAC film conveying speed m/min 30 30 30 30 30 30 Pro temperature deg 40 40 40 40 40 40 1st processing step 1st gas N2 slm 40 40 40 40 40 40 AA g/min 7.5 7.5 7.5 7.5 7.5 7.5 Gasifier Temperature deg 140 140 140 140 140 140 1st nozzle temperature deg 75 75 75 75 75 75 2nd processing step 2nd gas N2 slm 20 20 20 20 20 20 2nd nozzle temperature deg 40 40 40 40 40 40 3rd process step 3 gas N2 slm 40 40 40 40 40 40 AA g/min 7.5 7.5 7.5 7.5 7.5 7.5 Gasifier temperature deg 140 .140 140 140 140 140 3rd nozzle temperature deg 75 75 75 75 75 75 4th processing step 4th gas N2 slm 20 20 20 20 20 20 Adding component Oxygen Hydrogen Hydrogen Methane Acetylene flow seek 20 20 100 160 160 160 Concentration ppm 1000 2000 5000 8000 8000 8000 4th nozzle temperature deg 40 40 40 40 40 40 Plasma condition supply DC voltage V 450 450 450 450 450 450 Supply DC current A 6.7 6.7 6.7 6.7 6.7 6.7 Power supply W 3015 3015 3015 3015 3015 3015 Voltage applied between rolls kV 18.1 18.1 18.1 18.1 18.1 18.1 Evaluation of initial strength N/25mm 9.6 9.8 9.8 9.8 9.4 10.8 Durable strength N/25mm 9.1 7.2 8.8 9.3 9.0 10.1 [ [Example 7] In Example 7, the apparatus 1A of the second embodiment (Fig. 5) was used, and in the third processing step, an additive component was added to the third gas g3. Methyl propyl 162457.doc -39- 201241490 allyl acrylate was used as an additive component. The flow rate of the carrier gas (N2) of the third gas g3, even the flow rate of the entire third gas g3 is 40 slm, the flow rate of the acrylic acid in the third gas g3 is 7·5 g/min, and the thiol acrylic acid in the third gas g3 The flow rate of acrylonitrile was 〇.375 g/min. In the fourth processing step, the fourth gas g4 is set to be only N2 20 Slm, and the amount of the additive component in the fourth gas g4 is 〇 ^, and the other processing conditions are the same as those in the embodiment. The procedure for preparing the polarizing plate sample after the surface treatment and the measurement procedure for the initial adhesion strength and the durability bonding strength were the same as in the first embodiment. The initial adhesion strength is 10.2 N/25 mm, and the durability is then 9.8 N/25 mm. Therefore, it was confirmed that the adhesion strength was maintained even when exposed to a hot and humid environment. [Example 8] In Example 8, the apparatus 1A of the second embodiment (Fig. 5) was used, and in the third processing step, diallylamine was used as the third gas "addition of the third gas S3" The flow rate of the carrier gas (N2), even the flow rate of the entire third gas g3 is 40 Slm, the flow rate of the acrylic acid in the third gas g3 is 75 g/min, and the flow rate of the ethylenediamine in the third gas S3 is 〇· 375 g/min. Other processing conditions were the same as in Example 5. The procedure for preparing the polarizing plate sample after the surface treatment, and the measurement procedure for the initial adhesion strength and the durability bonding strength were the same as in Example 1. The strength is 10"N/25 mm, and the durable bonding strength is 9.6 N/25 mme. Therefore, it can be confirmed that the bonding strength can be maintained even when exposed to a hot and humid environment. Table 2 shows the processing conditions and measurement results of Examples 7 and 8. 162457.doc 201241490 [Table 2] --_ Example 7 Example 8 Apparatus Fig. 2 Fig. 2 Processed film TAC TAC Film transport speed m/min 30 30 Roller temperature deg 40 40 First gas n2 slm 40 40 First treatment Step AA g/min 7.5 7.5 Gasifier temperature deg 140 140 First nozzle temperature deg 75 75 Second processing step 2nd gas N2 slm 20 20 2nd nozzle temperature deg 40 40 n2 slm 40 40 3rd gas AA g/min 7.5 7.5 Third treatment step Addition of methacrylic acid propylene diacetate diallylamine concentration g / min 0.375 0.375 gasifier temperature deg 140 140 third nozzle temperature deg 75 75 fourth processing step fourth gas N2 slm 20 20 4th nozzle temperature deg 40 40 Supply DC voltage V 450 450 Plasma condition supply DC current A 6.7 6.7 Supply power W 3015 3015 Voltage applied between rolls kV 18.1 18.1 Evaluation initial strength N/25mm 10.2 10.1 Durable strength N/ 25 mm 9.8 9.6 [Comparative Example 1] In Comparative Example 1, no additive component was added to any of the third gas g3 in the third treatment step and the fourth gas g4 in the fourth treatment step. The processing conditions other than this are the same as in the first embodiment. Therefore, the processing conditions of the third processing 162457.doc -41 · 201241490 are the same as those of the first processing step, and the processing conditions of the fourth processing step are the same as those of the second processing step. The procedure for preparing the surface-treated polarizing plate sample and the procedure for determining the initial adhesion strength and the durability bonding strength were the same as in the first embodiment. The initial bonding strength is 10.3 N/25 mm and the durable bonding strength is 6.2 N/25 mm. Therefore, if exposed to a hot and humid environment, the adhesion deteriorates. [Comparative Example 2] In Comparative Example 2, 16 〇 3_hydrogen _ was added to the discharge generating gas (N2 20 slm) of the second gas in the second treatment step. In the third gas "and the fourth fluorine body g4, no additional components were added. The other processing conditions were the same as in the first embodiment. The preparation procedure of the polarizing plate sample after the surface treatment, and the initial bonding strength and durability were followed. The strength measurement procedure was the same as in Example 1. Initially 5.5 Ν/25. [Comparative Example 3] The subsequent strength was 10.3 Ν / 2 5 mm, and the durability was followed by a strong yield of mm. Therefore, if exposed to a hot and humid environment, Further, inferior to the third comparative example, the second gas in the second processing step is added with 16 〇 氢 hydrogen (10) to the discharge generating gas (N 2 20 slm), and is in the fourth gas g4 in the *processing step. 16 〇 读 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The same initial strength is 1 () 3 Durable strength is 5 · 9 N / 25 mme Therefore, when exposed to hot and humid environment, the adhesion deteriorates ^ "'... 162457.doc • 42- 201241490 Summary of the comparison in Table 3 Processing conditions and measurement results of Examples 1 to 3. According to the above examples and comparative examples, it was confirmed that the third gas g2 in the third processing step is not added to the first gas gl in the first processing step and the second gas g2 in the second processing step. Or, the addition component is added to the fourth gas g2 in the fourth processing step, and the adhesion durability of the TAC film 9 can be improved. [Table 3] —-~— _ Comparative Example 1 Comparative Example 2 Comparative Example 3 Film to be treated TAC TAC TAC Film transport speed m/min 30 30 30 Roll temperature deg 40 40 40 First gas n2 slm 40 40 40 First treatment Step AA g/min 7.5 7.5 7.5 Gasifier temperature deg 140 140 140 1st nozzle temperature deg 75 75 75 n2 slm 20 20 20 2nd processing step 2nd gas addition component - Hydrogen and hydrogen flow seek - 160 160 2nd nozzle temperature Deg 40 40 40 3rd gas n2 slm 40 40 40 3rd processing step AA g/min 7.5 7.5 7.5 Gasifier temperature deg 140 140 140 3rd nozzle temperature deg 75 75 75 n2 slm 20 20 20 4th processing step 4 Gas addition component - - Hydrogen flow seek - - 160 4th nozzle temperature deg 40 40 40 Supply DC voltage V 450 450 450 Plasma condition supply DC current A 6.7 6.7 6.7 Supply power W 3015 3015 3015 Voltage applied between rolls kV 18.1 18.1 18.1 Evaluation initial strength N/25 mm 10.3 10.3 10.3 Long-lasting strength N/25mm 6.2 5.5 5.9 162457.doc •43· 201241490 [Industrial Applicability] The present invention can be applied to, for example, a flat panel display (FpD, Fiat) p Disp Lay) The manufacture of polarizing plates. Ae [Simplified illustration of the drawings] Fig. 1 is a side view showing the processing apparatus of the present invention in an illustrative manner. ^(4) Film surface Fig. 2 is a perspective view of a main part of the above film surface treatment apparatus. Fig. 3 is a cross-sectional view showing the process of the surface of the surface cow 4 in the first embodiment, (4) is the first treatment = the cross-sectional view of the treatment film, (b) the treatment after the treatment, and (4) the third treatment step. FIG. 4 is a cross-sectional view showing a portion of the polarizing plate. FIG. 5 is a cross-sectional view showing a portion of the polarizing plate. FIG. 5 is a cross-sectional view showing the present invention in an illustrative manner. Side view of the second real processing apparatus. <Film surface step == surface treatment step of the second embodiment, (4) is a cross-sectional view of the first processed film, and is a photograph of the processed film after the second processing step. (4) A cross-sectional view of the film to be processed after the third processing step '(4) is a cross-sectional view of the film to be processed after the fourth processing step. [Description of main components] 1 Film surface treatment apparatus 7 PVA film 8 PVA adhesive 9 Treatment film 10 Support portion (transport mechanism) 162457.doc 201241490 11 First roller 12 Second roller 13 Third roller 16 Front guide roller. 17 Rear guide roller 21 First gas supply unit &quot; 21c First gas supply line 22 2 gas supply unit 23 third gas supply unit 23a acrylic Feeding unit (polymerizable monomer supply unit) 23b Adding component supply unit 23c Third gas supply line 24 Fourth gas supply unit 24a Discharge gas supply unit 24b Adding component supply unit 31 First nozzle 32 Second nozzle 33 Third nozzle ' 34 4th nozzle-. 41, 43 shielding member 51' 52 blocking member 80 next promoting film 81 first plasma polymerization film 82 second plasma polymerization film 162457.doc -45- 201241490 83 first condensation layer 84 second Condensation layer 85 Second plasma polymerization film 86 Second condensation layer 91 First processing unit 91a First processing space 92 Second processing unit 92a Second processing space (gap between the first and second rolls) 93 Third processing unit 93a third processing space 94 fourth processing unit 94a fourth processing space (gap between the second and third rolls) gl first gas g2 second gas g3 third gas g4 fourth gas PF polarizing plate 162457.doc · 46 ·

Claims (1)

201241490 七、申請專利範圍: h 表面處理方法,其特徵在於:其係對樹脂製之被 处膜之表面進行處理者;且包括如下步驟: 第1處理步驟,其係使含有經氣化之聚合性單體之第丄 氣體接觸上述被處理膜; 第2處理步驟,其係於上述第丨處理步驟後或與上述第 處里步驟同時地’將含有放電生成氣體之第2氣體電聚 化並使之接觸上述被處理膜; 第3處理步驟,其係於上述第2處理步驟之後,使含有 經氣化之聚合性單體之第3氣體接觸上述被處理膜;及 第4處理步驟,其係於上述第3處理步驟後或與上述第 3處理步驟同時地’將含有放電生成氣體之第4氣體電漿 化並使之接觸上述被處理膜;且 上述第3氣體或上述第4氣體中進而含有添加成分,上 述添加成分為氧氣、氫氣、飽和烴氣體、或不飽和烴氣 體、或交聯促進劑。 2·如請求項1之膜表面處理方法,其中上述第4氣體含有 500 ppm〜3000 ppm氧作為上述添加成分。 3. 如請求項1之膜表面處理方法,其中上述第*氣體含有 500 ppm〜10000 Ppm氫作為上述添加成分。 4. 如請求項1之膜表面處理方法,其中上述第4氣體含有甲 烷、或乙烯、或乙炔作為上述添加成分。 5. 如請求項1之膜表面處理方法,其中上述第3氣體含有包 含二烯丙基化合物、二胺化合物、縮水甘油基化合物、 162457.doc 201241490 作為上述添加成 或羥基化合物之交聯促進劑之氣化氣體 埋万法,其中上述第 之聚合性單體為丙烯 如請求項1至5令任一項之膜表面處理方法 1氣體之聚合性單體及上述第3氣體之 ,其特徵在於:其係對樹脂製之被 一種膜表面處理裝置, 處理臈之表面進行處理者;且包括: 支持部,其支持上述被處理膜; &gt;第1處理部,其進行使含有經氣化之聚合性單體之第 氣體接觸上述被處理膜之處理; 第2處理部,其進行將含有放電生成氣體之第2氣體1 漿化並使之接觸被處理膜之處理; 第3處理部,其進行使含有經氣化之聚合性單體之第 氣體接觸被處理膜之處理; 第4處理部,其進行將含有放電生成氣體之第*氣體屬 漿化並使之接觸被處理膜之處理;201241490 VII. Patent application scope: h Surface treatment method, characterized in that it is processed on the surface of the resin-made film; and includes the following steps: The first processing step is to make the vaporized polymerization The second gas of the monomer is contacted with the film to be treated; and the second processing step is to electrically polymerize the second gas containing the discharge generating gas after the second processing step or simultaneously with the first step a third processing step of contacting the third gas containing the vaporized polymerizable monomer with the film to be treated after the second processing step; and a fourth processing step After the third processing step or simultaneously with the third processing step, 'the fourth gas containing the discharge generating gas is plasma-treated and brought into contact with the treated film; and the third gas or the fourth gas Further, the additive component is contained, and the additive component is oxygen, hydrogen, a saturated hydrocarbon gas, an unsaturated hydrocarbon gas, or a crosslinking accelerator. 2. The film surface treatment method according to claim 1, wherein the fourth gas contains 500 ppm to 3000 ppm of oxygen as the additive component. 3. The method of treating a surface of a film according to claim 1, wherein the first gas contains 500 ppm to 10,000 ppm of hydrogen as the additive component. 4. The film surface treatment method according to claim 1, wherein the fourth gas contains methane, ethylene or acetylene as the additive component. 5. The method of treating a surface of a film according to claim 1, wherein the third gas contains a diallyl promoter comprising a diallyl compound, a diamine compound, a glycidyl compound, and 162457.doc 201241490 as the above-mentioned addition or hydroxy compound. The gasification gas occlusion method, wherein the first polymerizable monomer is a polymerizable monomer of the film surface treatment method 1 according to any one of claims 1 to 5, and the third gas is characterized in that It is a resin-made film surface treatment apparatus that processes the surface of the crucible, and includes: a support unit that supports the film to be treated; &gt; a first treatment unit that performs gasification a process in which the first gas of the polymerizable monomer contacts the film to be processed; and a second processing unit that performs a process of slurrying the second gas 1 containing the discharge generating gas and bringing it into contact with the film to be processed; and a third processing unit; a process of bringing the gas containing the vaporized polymerizable monomer into contact with the film to be treated; and a fourth processing unit for slurrying the first gas containing the discharge generating gas and causing Contacting the treated film to be processed; 斤進行搬送;且Transfer the pound; and 體、或交聯促進劑。 脱丫迴rt〇嘗有添加成分,上 飽和烴氣體、或不飽和烴氣Body, or cross-linking accelerator. Detach back to rt, taste added, saturated hydrocarbon gas, or unsaturated hydrocarbon gas 互平行地排列之第1、 祖裝置,其中上述支持部包括相 第2、第3輥,上述被處理膜纏繞 I62457.doc 201241490 於該等觀上 述第2輥、上 且藉由該等輥之旋轉而按照上述第1輥、上 述第3輥之順序搬送; 上述第〗處理部包括 第1氣體之第】噴嘴; 面向上述第1報之周面而喷出上述 上述第2處理部包括將上述第2氣體嘴出至上述第旧 與上述第2報之間之間隙的第2喷嘴,上述第丨、第2親構 成於相互之間生成大氣壓附近之放電的__對電極; 上述第3處理部包括面向上述第2輥之周面而 第3氣體之第3喷嘴; &amp; 上述第4處理部包括將上述第4氣體喷出至上述第2輥 與上述第3輥之間之間隙的第4噴嘴,上述第2、第3輥構 成於相互之間生成大氣壓附近之放電之一對電極。 162457.docThe first and second arranging devices arranged in parallel with each other, wherein the support portion includes phase 2 and third rolls, and the processed film is wound around I62457.doc 201241490 on the second roll, and by the rolls Rotating and transporting the first roller and the third roller in the order of the first roller and the third roller; the first processing unit includes a first nozzle of the first gas; and discharging the second processing unit toward the circumferential surface of the first newspaper includes a second nozzle in which the second gas nozzle is out of a gap between the first and the second newspaper, wherein the first and second members are configured to generate a discharge __ counter electrode in the vicinity of the atmospheric pressure; and the third processing The portion includes a third nozzle that faces the circumferential surface of the second roller and the third gas; and the fourth processing portion includes a portion that ejects the fourth gas to a gap between the second roller and the third roller In the four nozzles, the second and third rolls are formed to generate one of the discharge electrodes in the vicinity of the atmospheric pressure. 162457.doc
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