TW201241157A - Phosphor composition for LEDs - Google Patents

Abstract

The invention relates to a phosphor composition for LEDs with flat absorption curve in the blue spectral range (430 - 460 nm) by having a Ce (III) doped phosphor and a Eu (II) doped phosphor. The increase of absorption of the Ce(III) doped phosphor from 430 nm to 460 nm compensates the decrease of absorption of the Eu(II) phosphor leading to a wanted flattened absorption behavior of the mixture.

Description

201241157 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to the field of light-emitting diodes (LEDs). In particular, the present invention relates to an enhanced uniform emission phosphor converted LED light assembly (PcLED) and its efficient manufacture. _ [Prior Art] The process variation of the blue pump wavelength is related to a color distribution in the LED lamp that converts the light body, and thus can reduce the improper color point displayed by pcLED (so-called "binning") ) resulting in a total product yield. Although several solutions to this problem have been proposed in the art (for example, in US Pat. No. 6,060,057,753), there are still alternatives that are capable of at least partially overcoming the color separation problem, particularly for wafer level scale applications. Continued needs. SUMMARY OF THE INVENTION It is an object of the present invention to provide a phosphor composition for an LED that can at least partially overcome color separation (especially for use on a wafer level scale) by the phosphor composition. This object is achieved by the phosphor composition of the first aspect of the invention. Therefore, a phosphor composition for a LED is provided, which is packaged

W comprising at least one Ce(III)-doped phosphor and at least one Eu(n)-doped phosphor, wherein - the Ce(III)-doped phosphor has a minimum 4f-5d absorption in the range of 244〇nm to $480nm a frequency band having a spectral width (FWHM, full width at half maximum) in the range of 22000 cm·1 to $4300 cm 1 , wherein the Ce(III) doped phosphor has a peak at & 丨〇 nm to £570 nm 162487 An emission band within the range of .doc 201241157 - wherein the Eu(II)-doped optical body has a transmission band having a peak in the range of 490 nm to ^570 nm; and - wherein the Eu(II) scale light is doped The absorption coefficient k of the body in the range of 420 nm to 450 nm is the absorption coefficient k at 380 nm, which is 5 Ο%» The absorption coefficient k is called the complex part of the refractive index (c〇mpiex part) And usually wavelength dependent. It is related to the absorption index a in the Beer-Lambert law according to &=4π1ί/λ. It should be noted that k and k both involve the same doped Eu(II) phosphor. This phosphor composition has been shown to have at least one of the following advantages for a wide range of applications within the present invention: Using the phosphor composition of the present invention, LEDs can be fabricated to exhibit a very stable color point (usually a white color) Point, but not limited to: the invention is also applicable to LEDs to form other color points) that are only slightly shifted due to changes in the blue pumping emission wavelength, and thus exhibit significant in combination with increased product yield Higher temperature and drive stability. With the phosphor composition of the present invention, the color point of the LED is also more stable depending on the temperature of the LED and the drive current. The use of the phosphors of the invention is particularly advantageous for applications designed for wafer level LED fabrication' where a blue color separation is required. The invention can be applied using conventional manufacturing techniques and avoiding the complex layout of manufacturing processes. Using the phosphor composition of the present invention, it can be fabricated at a single thickness of the phosphor layer, typically having a range of from 430 nm to 470 nm (due to changes in processing at the epitaxial 162487.doc 201241157 level) (blue) A complete wafer of peaks that emit peaks, thereby exhibiting a very stable color point within a 7th-order McAdam ellipse within a nominal CCT category, such as by ANSI_NEMA_ANSLG C78.377-2008 National Light The standard is defined by the American National Standard for Electric Lamps-Specifications for the Chromamaticity of Solid State Lighting Products. According to a preferred embodiment of the present invention, the Ce(III)-doped phosphor has a minimum 4f-^d absorption band having a spectral width in the range of 2 2400 cm·1 to $4000 cnT1 (F WHM, half High full width). According to a preferred embodiment of the present invention, (1) the absorption coefficient of the lowest 4f-5d absorption band of the Eu(n) can-doped light body and (ii) the minimum 4f-^5d of the Ce(III)-doped phosphor. The sum of the absorption coefficients of the absorption band has a minimum value in the range of 380 nm to S45 〇 nm. According to a preferred embodiment of the invention, the Ce(III)-doped phosphor has a smaller CIE 1931 y color coordinate and/or a smaller X color coordinate than the Eu(II)-doped phosphor. Preferably, the difference in the y color coordinates is 2 〇.〇1, preferably the same as 0.05 and the best 〇.〇7. Preferably, the difference in the X color coordinates is 20.02, preferably 2 〇. 〇 8 and optimal 〇 13. According to a preferred embodiment of the invention, the Eu(n)-doped phosphor has a minimum 4f-»5d absorption in the spectral range from 2300 nm to $520 nm (preferably <460 nm 'better $430 nm) frequency band. According to a preferred embodiment of the present invention, the lowest absorption frequency of the Eu(II) eutectic is 162487.doc 201241157, and the maximum value is higher than the minimum absorption band maximum of the Ce(in) phosphor. High energy point β According to a preferred embodiment of the invention, the at least one Ce(m)-doped phosphor comprises a garnet material. The term "garnet material" especially means and/or comprises the material Ml3Mll2(MlnX4)3 as one of the main components, wherein Μ is selected from the group consisting of Mg, Ca, Y, Na, Sr, Gd, La, Ce' Pr, Nd, Sm 'Eu, Dy, Tb, Ho, Er, Tm, Yb, Lu or a mixture thereof Mn is selected from the group A1, Ga, Mg, Zn, Y, Ge, Sc, Zr, Ti, Hf or a mixture thereof, m111 is selected from the group consisting of Si, Si, B, Ge 'Ga, V' As, Zn or a mixture thereof, and x is selected from the group consisting of 〇, s, N, F, Cl,

Br, I, OH, and mixtures thereof, and are composed of Μ!% octahedron & Μπΐχ4 tetrahedron, wherein each octahedron is joined to another six octahedrons via a vertex sharing tetrahedron. Each tetrahedron shares its apex with four octahedrons such that the composition of the framework is (ΜηΧ3)2(Μ〖πΧ2)3. Larger ions... occupy 8 coordination sites (dodecahedron) in the gap of the framework, providing the final composition Μ丨3M丨丨2M"丨3Χ12*μ,Μ丨丨2(M丨丨丨X4) 3. These materials have proven themselves to be 'in this respect because in most applications' they implement the criteria for a carbon body in accordance with the present invention. According to the preferred embodiment of the present invention, the at least-doped photo-sharp is essentially a garnet material. = surgery. . Essentially, it means 295 weights. /. Preferably, it is 97% by weight and most preferably 299% by weight. However, in some applications, trace amounts of additives may also be present in the total composition. Such additives specifically include materials such as those known in the art as dads. Suitable smelts include alkaline earth or alkali metal oxides, borates, phosphates and dentate ϋ initials such as fluoride, ammonium hydride '162487*doc 201241157

Si〇2 and the like, and a mixture thereof β According to a preferred embodiment of the present invention, the at least one ce(ll) phosphor package 3 (preferably essentially) has the following structure: M3.xAl5 yGay〇|2: Cex (M=Y, Lu, Gd), 〇 5ys〇.5. According to a preferred embodiment of the invention, the at least one Eu(II)-doped phosphor comprises (preferably essentially g) a SiA1〇N material. According to a preferred embodiment of the present invention, the at least one Eu(II)-doped phosphor package 3 (preferably essentially) is selected from the group consisting of: or a mixture thereof: Sn.xMx Si202N2:Eu (M=Ca, Ba) (where 〇 0.25) ^ M2Si〇4; Eu (M=Sr, Ca, Ba) ^ M3Si6〇12N2:Eu (M=Ba,

Sr' Ca) or Sr5.y_z.aMySi23_xAl3+xOx+2aN37.x.2a:Euz (where M=Ca,

Ba ; 〇 <xS7,, 〇 〇〇〇1$zs〇 5 and also 5),

SrGa2S4: Eu, Si6_z.2xAlz+2xOzN8_z: Eux (〇·〇〇5<χ$〇.〇4, 0.BzS0_5). In accordance with a preferred embodiment of the present invention, in addition, the phosphor composition comprises an orange to red emitting phosphor material having > 6 〇〇 nm and < 650 nm, preferably > 608 nm and <640 nm and optimal > 610 nm and < 630 nm one of the emission peaks. It has been shown that for many applications within the present invention, this situation results in white light having a reduced correlated color temperature change for a wide range of blue lEd at different wavelengths, which is useful for many practical applications and/or the present invention. It is advantageous in terms of use. Preferably, the orange to red emitting scale material preferably comprises (more preferably essentially) an Eu(II)-doped and/or Mn-doped (IV)-doped light-emitting body (emission peak) emitted in the red spectral range. > 580 nm). In this manner, the invention can be applied to a correlated color temperature in the range of 162487.doc 201241157, where 15 〇〇K<Cct<i〇〇〇〇k» In a more particular preferred embodiment of the invention, the orange The red-emitting phosphor material preferably comprises (more preferably essentially) a material selected from the group consisting of: or a mixture thereof: (Bai x_y.zSrxCayEUz) 2Si5.abAm# (where OSxSl, 〇Sy$0 75, 0 005%0 08, 〇%〇2 and 0^0.2) (especially better (Ba.4Sr.6) 丨96 is called 95n7 8〇. 2:Eu..彳)' 丨丨... Sii+x-zAlh+ zNhO^EupCez (where M=Ca, Sr, Ba, Mg ' 0^0.05 ' 0. 〇〇 2% 〇. 〇 5, 0 such as 0.08) (especially preferred (Ca 〇 5 Sr () 5) 〇 975 Sii. 〇i5Al〇.985N2.985〇〇.〇i5:Eu〇.01) > Mj.XS,.ySey:Eux (where M=Ca, 8 plant 1^) (especially better 〇3..99958〇. 286..8$11.._5), six 2811_)^6:1411) ((eight of them = 1: 仏, 1^, 1113) (especially preferably 1 <:2810.95?6:1^110.05). The phosphor composition may be provided in powder form (eg, containing the phosphor composition in a layer of ruthenium). It should be noted that the invention is comprised The (at least) two phosphors of the phosphor composition may be provided as a mixture, or there may be, for example, two layers, each layer containing essentially only one phosphor material. Alternatively, the phosphor composition may be Further, the present invention relates to an LED 'preferably comprising a pcLED of a phosphor composition according to the present invention. Further, the present invention relates to a method for fabricating such LEDs on a circular scale. Further, the present invention relates to a use of the phosphor composition of the present invention for reducing color separation in the manufacture of pcLEDs and/or improving the color stability of pcLEDs. Further, the present invention is Regarding a method, the method improves the color point stability of a pcLED by using the light-filling composition of the present invention. 162487.doc 201241157 Compound and/or office lighting system, system store lighting system, home lighting system, reinforcing lighting system Light illumination system theater lighting system fiber application system projection system self-luminous display system broken pixelated display system segment display system Signage system medical lighting system indicator system, and decorative lighting system portable system automotive application warm lighting system, the aforementioned components and claimed components and 垆H日 a / by the method described in the example The gamma component is affected by its size, shape, material selection and technology without any special exceptions, so that the selection criteria known in the relevant field can be applied without limitation 162487.doc 201241157. [0012] Additional details, features, characteristics, and advantages of the objects of the present invention are disclosed in the following description of the accompanying claims. Several embodiments and examples of the phosphor compositions of the present invention. EXAMPLES The invention will be further understood by the following examples which are merely illustrative and not limiting. In the following examples, the listed phosphor materials are used, and the spectral data of the phosphor materials are given in Tables I and II below: Table I: The lowest 4f-5d absorption band of the Ce-doped phosphor material Absorption maximum The spectral width of the band (FWHM) Y2.91A15OI2-Oe0.09 460 nm 2700 cm·1 to 3000 cm·1 LU2.954AI5012 · Ce〇〇46 448 nm 1900 cm·1 to 2100 cm·1 La2. 94Si6Nu:Ce〇.〇6 458 nm 2900 cm-1 to 3200 cm] LU2.9895Al5〇i2:Ce〇.〇i〇5 447 nm 1800〇11_1 to 2000〇11_| Lu〇.5991 Y2.3964AI5012 · Ce〇 .〇〇45 456 nm 1800 cm*1 to 2000 cm-1 LUi.49775Yi.49775Al5〇i2:Ce〇.〇〇45 453 nm 2000 cm·1 to 2100 cm·1 Table II: Eu-doped phosphor material At 380 nm, the absorption coefficient at 50% is the peak wavelength emission FWHM (Sr〇.9Ca〇,i)〇96Si2〇2N2:Eu〇.〇4 436 nm 539 nm 74 nm Ba〇.98Sr〇. 9gSi〇4:Eu〇.〇4 432nm 524 nm 67 nm Sr4.9Al5Si2i〇2N35:Eu〇.i 420 nm 509 nm 67 nm 162487.doc •10· 201241157 Another Eu-doped phosphor is Sr0.97Ga2S4:Eu0. 03. The absorption coefficient of Υ2·?ιΑ15〇丨2:Ce0.09 is shown in Fig. 1, and the absorption coefficient (straight line) of SrojCao.Oo.wShC^NyEuo.jH and the absorption coefficient (dotted line) of BOSE are shown in Fig. 2.

EXAMPLE I In a first example, a 100 μm mixture containing 67% by volume of a 16.2 vol% mixture of SrojCao.OowShC^Ny Eu0.〇4+33 vol./〇Y2 9丨Al5〇丨2:Ce〇.〇9 was prepared. Thick polyoxynitride layer. Figure 3 shows the absorption spectrum of the (desired) flat absorption curve in the blue spectral range (43 〇 nm to 460 nm). The absorption of Ce(III)-doped garnet phosphor from 43〇 The increase in ηιη to 460 nm compensates for the decrease in the absorption of the Eu(II) fill, resulting in the desired flattened absorption behavior of the mixture. To illustrate the compensation, a more detailed curve is shown in Figure 4.

Example II In a second example, a volume of 6% by volume (Sr〇9Ca〇i) 〇96Si2〇2N2: Eu〇_〇4+40 was prepared. /. Γ2 9]Al5〇i2: a 2 〇 volume % mixture of Ce 〇 ι ι 厚 厚 厚 , , , , , , 。 。 。 。 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色 蓝色Figure 5 shows three lED2cie 1 976 color points, and as a comparison, the color point of the pure component of the mixture is shown to vary greatly from the color point of the pure component of the mixture on top of the same led light source. Reduced.

Example III 3 67 % by volume (sr〇9ca〇)) 〇96Si2〇2N2:Eu〇〇4+33 vol% of a 16.2 vol% mixture of YwiAlsOaCeo.o9 of about 9 〇μm thick poly 矽 487 162487.doc -11 - The 201241157 oxygen flakes were attached to another polyfluorene oxide flake having a thickness of about 1 5 μm containing 16.2 volumes of 0/0 red light-emitting (BaSr) 丨.wSisNyEuo.M powder. The stack was attached to various blue LED sources (emission peaks at 440 nm '442 nm and 448 nm) with the stacked red illuminating sheets oriented to the LED emitting surface. Figure 6 shows the three emission spectra of the LED; it can be clearly seen that although the blue light changes, the total emission spectrum is almost the same, i.e., the "separation" of the pcLED is not necessary. Figure 7 shows the resulting CIE 1976 color point of the LED. All color points are positioned close to the center of the 3500 K ANSI C78.377 A color range, so the effect of the blue pumping interval variation is greatly reduced compared to the binary green/yellow + red scale combination.

Example IV was prepared containing 5.9 vol% (SrojCa.). 96Si2〇2N2:Eu〇.〇4+5.9% by volume Y^iAlsOaCeo.Q9·^.! Volume % red nitride filler (emission peak is about 620 nm) mixture of about 56 μη thick thick polyoxane layer, And it is applied to a blue emitting LED having an emission peak in the range of 430 nm to 470 nm. Figure 8 shows the resulting CIE 1976 color point for the LED. All color points are positioned within the 3500 K ANSI C78.377 A color range, so the effect of blue pumping interval variations is greatly reduced compared to the binary green/yellow + red phosphor combination. In contrast to the above examples, Figure 9 shows the use of a red nitride phosphor (emission peak of about 620 nm) and (1) CeIII (Y29lAl5〇丨2:Ce〇〇9) [curve] or (ii) EuII plexisphere ( (Sro.pCao.DowShC^NyEuow) [Dotted line] pure I62487.doc 12 201241157 The resulting CIE 1976 color point of the LED produced by combining only blue emission centered around +/- 4 nm around the center 450 nm wavelength The peak wavelength 'color point' is located within 3500 K ANSI C78.377.

Example V will contain 5.2% by volume of Ba〇.98Sr〇.98Si04:Eu2+().〇4 (BOSE)+4_3 vol% 丫2.91 八150|2:€6〇.〇9+10.5 vol% red nitride phosphor (Emission emission peak is about 620 nm) Approximately 140 μη thick polyfluorene oxide layer of the mixture is applied to the blue emission LED having an emission peak in the range of 430 nm to 470 nm. FIG. 10 shows the resulting CIE 1976 color of the LED. point. All color points are positioned within the 2700 K ANSI C78.377 A color range, so the effect of the blue fruit range change is greatly reduced compared to the binary green/yellow + red syllabus combination.

Example VI Preparation of a mixture containing 4.4 volumes of 〇SruAlsSiaiChNw.Euu+SJ volume 〇/〇1^2.88 八15〇12: 〇6〇.12+12.3 vol% red nitride phosphor (emission peak of about 609 nm) A polyfluorene layer of about 260 μηι thick is applied to a blue emitting LED having an emission peak in the range of 430 nm to 470 nm. Figure 12 shows the resulting CIE 1976 color point for the LED. All color points are positioned within the 2700 K ANSI C78.377 A color range, so &amp; u this, compared to the binary green/yellow + red phosphor combination, the effect of the blue pumping Greatly reduced. In contrast to the above examples, the figure shows the use of red nitride scales 162487.doc 13 201241157 (emission peak is about 609 nm) and (1) Ce(III) Lu2,88Al5012:Ce().12[dashed line] or ( Ii) Eu(II) stepper (Sr4.9Al5Si2i〇2N35:Eu〇.)) [Curve] of the purely combined LED produced by the CIE 1976 color point according to another aspect of the invention provides a crystal Method of Fabricating Phosphor-Coated LEDs on a Circular Scale" The method includes the steps of providing a grown wafer or substrate having a plurality of LEDs. For example, [ED can be epitaxially grown on a growth wafer or can be bonded to a host substrate. The wafer can be made from a variety of materials such as sapphire, tantalum carbide, aluminum nitride, and gallium nitride. The LEDs can be fabricated from different material systems, with the preferred material system being based on the Dioxon nitride. The Dioxon nitride refers to the semiconductor compound formed between nitrogen and an element of the first group of the periodic table (usually aluminum, gallium, and indium). The term also refers to ternary and tetravalent compounds such as AlGaN and AlInGaN. The LED layer typically comprises an active layer/region sandwiched between the first and second oppositely doped epitaxial layers, all of which are sequentially formed on the growth crystal. Preferably, the active area is configured to emit light having a wavelength in the range of 43 〇 11 claws to 47 〇 (10). The LED layer can be initially formed as a continuous layer across the growing wafer or substrate. Subsequent 'exemplary and t' can be divided into or separated into individual LEDs by etching down to the wafer via the active region and the doped layer, thus forming an open region $ between the LEDs. Alternatively, the active and miscellaneous layers can be maintained as a continuous layer on the wafer and can be separated into individual devices as the (phosphor coated) LED wafer is singulated. The method further includes the step of providing a wavelength converting material. The wavelength converting material comprises a phosphor composition according to the first aspect of the invention. The wavelength converting material is mounted on a plurality of LEDs on the wafer. In an embodiment, the I62487.doc 201241157 wavelength converting material comprises a phosphor/binder coating covering each of the plurality of LEDs on the wafer. Phosphor/binder coatings can be applied using different known processes, such as dispensing, jet printing, screen printing, electrophoretic deposition, or electrostatic deposition. Alternatively, the wavelength converting material can be fabricated as a separate preform that can be bonded to an LED on a wafer or to an LED mounted on a wafer. The preform may, for example, be a sheet of a transparent matrix material (e.g., polyfluorene oxide) in which the phosphor is dispersed. Alternatively, the preform may be a stack of sheets such as those described above in Example III. Alternatively, the preform may be a ceramic plate containing a phosphor composition, the wafer scale plate may be glued to the LED on the wafer, or may be bonded to the substrate (eg, a sapphire body substrate), the LED has self-growth crystal The circle is transferred to the substrate. The method further includes the step of singulating individual LEd wafers from the wafer. This step can be accomplished using known methods such as cutting, scoring and breaking or etching. The singulation process separates each of the (phosphor coated) LED wafers, each having substantially the same emission characteristics. This situation allows for reliable and consistent fabrication of LED wafers having substantially similar emission characteristics. Advantageously, 'in this manufacturing method' avoids the measurement of the individual emission characteristics of "naked" (ie, 'phosphor coated) LED chips, the mapping of such characteristics on the wafer, and according to the mapping The need to adjust the wavelength converting material (eg, 'quantity or concentration') to obtain a substantially single color point of all lEDs on the wafer. The singulated phosphor coated LED wafer can be packaged. This may include mounting the LED wafer in the package to a sub-substrate or printed circuit board. This can be done without further processing to add or remove phosphors to achieve a 162487.doc 201241157 color point. installation. It should be understood that the methods described above do not necessarily have to be applied to a complete wafer. It can also be used to process wafers that are smaller than a full wafer. Alternatively, it can be applied to process LED groups that are separated from the wafer as a group. The specific combinations of elements and features in the above detailed description are merely exemplary; and other teachings in the present application and the patents/applications incorporated by reference are hereby incorporated by reference. Variations, modifications, and other implementations of what is described herein will be apparent to those skilled in the art, in light of this disclosure. Therefore, the foregoing description is to be construed as illustrative only and not restrictive The mere fact that certain measures are recited in mutually different <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> does not indicate that a combination of such measures may not be used. The scope of the invention is defined in the following claims and their equivalents. In addition, the reference signs used in the description and claims are not intended to limit the scope of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows an absorption spectrum of a Ce(III)-doped phosphor according to an example of the present invention; FIG. 2 shows an absorption of two Eu(n)-doped phosphors according to an example of the present invention and Figure 3 shows the absorption spectrum of the ruthenium layer comprising the phosphor composition of the present invention; Figure 4 shows the phosphor composition of the present invention and the Ce(III)-doped phosphor and Eu(n) doped in accordance with an embodiment of the present invention. Absorption spectrum of a phosphor; 162487.doc 16 201241157 Figure 5 shows a diagram illustrating a CIE 1976 color point of an LED using the phosphor composition of the present invention in accordance with another embodiment of the present invention; Another embodiment of the three emission spectra of an LED using the phosphor composition of the present invention; Figure 7 shows the resulting CIE 1976 color point of the LED of Figure 6; Figure 8 shows a phosphor converted according to another embodiment of the present invention. The resulting CIE 1976 color point of the LED; FIG. 9 shows the resulting CIE 1976 color point of the phosphor converted LED in accordance with another embodiment of the present invention; FIG. 10 shows a fill-substance converted LED in accordance with another embodiment of the present invention. The resulting CIE1976 color Color point; Figure 11 shows the resulting CIE 1976 color point of a light-filled LED using only one combination of a green phosphor and a red emissive phosphor, as compared to the embodiment of the invention shown in Figure 12 Figure 12 shows the resulting CIE 1976 color point of a light-filled converted LED in accordance with another embodiment of the present invention. 162487.doc • 17-

Claims (1)

201241157 VII. Patent Application Range: 1. A phosphor composition for an LED comprising at least one Ce(III) phosphor and at least one Eu(II) doped phosphor, wherein the Ce(III) is doped The phosphor has a minimum 4f-^5d absorption band with a peak in the range of 440 nm to $480 nm and a spectral width (FwhM, full width at half maximum) in the range of 22000 cm·1 to £4300 cm·1. Wherein the Ce(III)-doped phosphor has an emission band having a peak in the range of 251 〇 nm to $570 nm, wherein the Eu(II)-doped phosphor has a peak having a peak in the range of 2490 nm to £570 nm a transmission band, and wherein the at least one absorption coefficient k of the Eu(II)-doped spheroid in the range of 420 nm to 450 nm is an absorption coefficient k at 380 nm, which is 50 〇/〇〇2. The phosphor composition of item 1, wherein the Ce(in)-doped phosphor has a minimum 4f-»5d absorption band having a spectral width in the range of &gt; 2400 cm·1 to $4000 cm·1 (Fwhm , half height and full width). 3. The phosphor composition of claim 1 or 2, wherein the absorption coefficient of the lowest 4f-5d absorption band of the Eu(ii)-doped phosphor and the lowest 4f-5d of the doped (ni) phosphor The sum of the absorption coefficients of the absorption band has a minimum in the range of 2 380 nm to $450 nm. 4. The phosphor composition of claim 1 or 2, wherein the bismuth Eu(n) phosphor has a minimum 4f-5d absorption band in the spectral range from 2 370 nm to &lt; 460 nm. 5. The phosphor composition of claim 1 or 2, wherein the ce (lll) phosphor 162487.doc 201241157 comprises a garnet material. 6. The can composition of claim 1 or 2, wherein the at least one spheroidal body comprises a SiA1〇N material. The light-breaking composition of claim (4), wherein the at least-doped (five) _ light body comprises a material having a T structure: MnyGay 〇 12: Cex (M = Y, Lu, Gd) 〇 8 as claimed; *] Phosphor composition] wherein the Eu(n)-doped phosphor comprises a material selected from the group of M, or a mixture thereof: Sn-XMX Si2〇2N2:Eu (M = Ca, Ba) (where 〇如〇25), M2Si〇4.Eu (M=Sr, Ca, Ba) ' M3Si6〇12N2:Eu (M=Ba, Sr, Ca) or Sr5.yzaMySi23-xAl3+x〇x +2aN37_x.2a: Euz (where M=Ca, Ba; 〇&lt;xs7, 〇$y^5, 〇〇〇〇1幺^〇5 and 〇^d5), SrGa2S4:Eu, Si6-z_2xAlz+2x〇 zN8—z:Eux (〇.〇〇5&lt;x$〇.〇4, 〇.lSzS〇_5) 〇9. The use of a phosphor composition according to any one of claims 1 to 8, Phosphor compositions are used to reduce color separation in the manufacture of pcLEDs and/or to improve the color stability of pcLEDs. A system comprising a phosphor composition as claimed in any one of claims 1 to 8 wherein the system is used in one or more of the following applications: office lighting system home system store lighting system home lighting System Reinforced Lighting System I62487.doc 201241157 Concentrating Lighting System Theater Lighting System Fiber Application System Projection System Self-illumination Display System Pixelated Display System Segment Display System Warning Sign System Medical Lighting System Indication System, and Decorative Lighting System Carrying Type system automotive application greenhouse lighting system. 11. A method for fabricating a phosphor coated led on a wafer level scale, the method comprising: providing a wafer having a plurality of LEDs fabricated; providing the inclusion as in claims 1 through 8 a wavelength converting material of any one of the phosphor compositions; mounting the wavelength converting material on the wafer to form a phosphor coated LED; and coating the individual phosphor coated strips from the wafer Physicalization. A method of improving the color point stability of a PC LED, which improves the color point stability of the pcLED by using the phosphor composition of any one of claims 1 to 8. 162487.doc