TW201240036A - Heat-resistant adhesive tape for semiconductor package manufacturing process - Google Patents

Heat-resistant adhesive tape for semiconductor package manufacturing process Download PDF

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Publication number
TW201240036A
TW201240036A TW101101982A TW101101982A TW201240036A TW 201240036 A TW201240036 A TW 201240036A TW 101101982 A TW101101982 A TW 101101982A TW 101101982 A TW101101982 A TW 101101982A TW 201240036 A TW201240036 A TW 201240036A
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TW
Taiwan
Prior art keywords
heat
adhesive
adhesive tape
resin
resistant adhesive
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TW101101982A
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Chinese (zh)
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TWI514527B (en
Inventor
Shinji Hoshino
Junji Fukuhara
Yukio Arimitsu
Akihisa Murata
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2483/00—Presence of polysiloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/141—Feedstock

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Polymers & Plastics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

The problem to be solved is to provide a heat-resistant adhesive tape for semiconductor package manufacturing process which has excellent reworkability when applied at room temperature, and which can also prevent resin leakage in a resin-sealing process under a high-temperature atmosphere, as a heat-resistant adhesive tape for use in a semiconductor package manufacturing process. To solve this problem, the present invention provides a heat-resistant adhesive tape for semiconductor package manufacturing process which is used by applying the heat-resistant adhesive tape when a semiconductor chip is sealed with resin, the heat-resistant adhesive tape having a base material layer and an adhesive layer, and being slightly adhesive with excellent wettability at room temperature, and furthermore having increased adhesiveness under the high-temperature atmosphere after heating.

Description

201240036 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於半導體封裝製程之耐熱性黏著 帶。 【先前技術】 近年來，於LSI(Large Scale Integration，大型積體電路） 之安裝技術中，CSP(Chip Size/Scale package，晶片級封 裝）技術受到關注。於該技術中’ QFN(Quad FUt N〇n_ leaded package，方形平面無引腳封裝）所代表之將引線端 ^裝入封裝内部之形態的封裝係於小型化與高積體方面備 受關注之封裝形態之一。此種QFN之製造方法中，如下之 製造方法近年來備受嗎目，該方法係將複數個QFN用晶片 整齊地排列於引線框架之封裝圖案區域之晶片焊墊上並 於模具之模穴内，利用密封樹脂成批密封後’藉由切斷而 切開成個別之QFN結構物，藉此使引線框架每單位面積之 生產性飛躍性地提高。 於此種成批密封複數個半導體晶片之QFN之製造方法 中’樹月曰密封時之成形模具所爽之區域僅為較封裝圖案區 域向外側擴展之樹脂密封區域之外側。因&，於封裝圖； 區域特別是其中央部，無法以充分之壓力將外部引線面 按壓至成形模具上，而極難抑制密封樹脂向外部引線側 漏’從而容易產生QFN之端子等被樹脂包覆之問題。 ^此，相對於如上所述之QFN之製造方法，認為如下之 h方法特別有效：於引線框架之外部引線側貼附點著 161656.doc 201240036 帶’藉由利用該黏著帶之 目身黏者力（遮蔽）之密封效果， 而防止樹脂密封時夕a k 双果 時之向外引線側之樹脂洩漏。 於此種製造方法中，热2丨6 中於引線框架上搭载半導體晶片後 或實施打線接合後，谁杆 後’ 實質上較為困難，β 、禪作方面 肖期4將耐熱性黏著帶於最初之階 k貼合於引線框架之外 焊墊面上’其後經過半導體晶片 之搭載步驟或打線接人之+腓4 卞守趙阳片 st ^ 接°之步驟’進行貼合直至利用密封樹 月a之达、封步驟為止。作A f Α1Π 作為此種方法，提出有使用具有厚度 ^㈣以下之黏著劑層之耐熱性點著帶，可防止 漏同時實施打線接合等 文獻… ^等系列步驟之製造方法(參照專利 專利文獻！··日本專利特開2〇〇2_1848〇ι號公報 【發明内容】 發明所欲解決之問題 於半導體裝置之劁栌古、土 + " 中，於向引線框架貼附膠帶 日_备產生貼附不良時’有時暫時剝離夥帶後進行再次貼 合(回工)。此時，若膠帶之黏著力過高，則有於剝離時弓丨 線框架變形之虞。另一太 ★ ’於成形密封步驟中，若膠帶 之黏著力過低，則無法路播^ 只J熟在發揮樹脂遮蔽性，而 漏。因此，理想的是膠罄於合 東 /帶於常溫下之貼附時發揮低黏著 於高溫下之成形步驟中發揮高黏著力。 因此，本發明之目的在於裎 ^ L ^ 供一種半導體封裝製程用 …性黏著帶，其係用於半導俨 干等體封裝製程者，並且於常溫下 之貼附時之回工性優異，Η 古 、 ；馬’咖·環境下之樹脂密封步驟 161656.doc 201240036 中可防止樹脂洩漏。 解決問題之技術手段 本發明者·#人為了實現上述目的，對对熱性黏著帶之材 料、構成等進行了努力研究。結果得知，藉由採用以下之 黏者帶可實現上述目的。 1 · 一種半導體封裝製程用耐熱性黏著帶，其係於樹脂密封 半導體晶片時貼附於引線框架上而使用者，並且上述耐熱 性黏著帶具有基材層與黏著劑層，於常溫下對Cu板具有 〇’〇1〜0·3 0 M/2G mm之微黏著性’於高溫環境下黏著力提高 為 0.50 N/20 mm以上。 2,如1之半導體封裝製程用耐熱性黏著帶，其中於上述黏 著劑層中，使用聚石夕氧橡膠成分比率為8〇重量％以上之聚 矽氧黏著劑。 3·如1或2之半導體封裝製程用耐熱性黏著帶，其中於上述 黏著劑層巾’使用二甲基碎氧烧主键之甲基之—部分經苯 基取代之聚矽氧黏著劑。 發明之效果 上述本發明之耐熱性黏著帶係於密封搭載於金屬製之引 線框架上之半導體晶片日夺，貼合於引線框架上而使用，以 ;申/皿下具有微黏著I生，於例如2〇代之加熱後之I”。。之 高溫環境下黏著力提高之方式設計。 可於㊉咖下同時實現對引線框架之貼附性與回工 性，且於高溫之成形舟職 ^步驟中發揮不使樹脂洩漏發生之良好 之樹脂遮蔽性。 16l656.doc 201240036 【實施方式】 本發明之半導體封裝製程用耐熱性黏著帶係於樹脂密封 半導體晶片時貼附於引線框架上而使用者，並且係於基材 :上設置黏著劑層而成’於常溫下具有微黏著性，於高溫 環境下黏著力提高》 如此’可藉由於常溫與高溫之間改變黏著劑層之性質、 即關於黏著性之性質’巾同時實現製造半導體封裝時之遮 蔽引線框架時之回工性與樹脂密封步驟時之防止樹脂茂 漏。 本發明之半導體封裝製程用_熱性黏著帶係力樹脂密封 步驟時之加熱中，亦必須發揮所需之性質。 因此，作為本發明之半導體封裝製程用耐熱性黏著帶之 基材層，必須具有熔點為18〇t，較佳為26〇它以上之耐熱 性’例如可列舉：聚對苯二甲酸乙二酯（pET， polyethylene terephthalate)膜、聚萘二甲酸乙二 g 旨（pEN， polyethylene naphthalate)臈、聚喊砜（pES， sulfone)膜、聚醚醯亞胺（pEI，p〇iyether化丨心）膜聚砜 (F P〇lysulf〇ne)膜、聚本硫鍵（PPS，Polyphenylene sulfide)膜、聚醚醚酮（PEEK，p〇lyether ether …㈣)膜、 聚芳醋（PAR，p〇iyaryiate)膜、芳族聚醯胺膜、聚醯亞胺 膜、液晶聚合物（LCP，Liquid Crystal Polymer)膜。 作為基材層之厚度，考慮到加工性或回工時等之操作性 等’而設為5〜250 μιη，較佳為20〜100 μηι。 作為本發明中之黏著劑層，必須具備與上述基材層相同 I61656.doc 201240036 之对熱性’例如包含聚矽氧系黏著劑之黏著劑層。 該黏著劑層所必需之性質為於常溫下具有微黏著性且於 尚溫下黏著力提高之性質，且t 貝見常溫下之黏者力對於Cu板為 0.01〜0.30 N/2Q mm ’較佳為。。2〜。2。N/2。随高溫下 之黏著力（於本發明中，於2〇〇t下加熱i小時後，設為 175°C環境下時之黏著力）為〇5〇 N/2〇 mm以上較佳為 0·60 N/20 mm以上。 作為本發明巾之㈣劑，可❹特別是聚錢橡膠成分 比率為8G重量％以上之聚石夕氧黏著劑，又，亦可使用二甲 基矽氧烷主鏈之甲基之一部分經苯基取代之聚矽氧黏著 劑。 其中，作為聚矽氧橡膠成分比率為8〇重量％以上之聚矽 氧系黏著劑’較佳為包含作為樹脂成分之聚錢系黏著劑 與一液加成反應型聚矽氧橡膠之黏著劑。尤佳為利用該聚 矽氧交聯劑使作為樹脂成分之聚矽氧黏著劑與含有乙烯基 之聚矽氧橡膠成分交聯而成的黏著劑。 二液加成反應型聚矽氧橡膠可使用包含含乙烯基之聚矽 氧橡膠成分與具有SiH基（氫矽烷基）之聚矽氧交聯劑者。 此處，作為樹脂成分之聚矽氧系黏著劑係藉由於有機氣 矽烷之水解反應後進行脫水縮合反應而獲得之網狀結構的 有機聚矽1烷。X，聚石夕氧橡膠成 > 包含纟有直鏈結構之 二有機聚矽氧烷。作為有機基，樹脂成分及橡膠成分中均 包含甲基或苯基，亦可經乙基、丙基、丁基等取代。 於為二液加成反應型聚矽氧黏著劑之情形時，將乙稀基 I61656.doc 201240036 與氮石夕烧基之加成反應用於黏著劑之交聯。通常，乙稀基 係部分取代聚矽氧橡膠成分之有機基而導入。又，氫碎烧 基不導入包含聚石夕氧樹脂成分與聚矽氧橡膠成分之黏著主 劑側，而用作具有氩矽烷基之聚矽氧交聯劑。又，視需要 於加成反應型聚矽氧黏著劑中調配用於促進反應之鉑觸媒 等觸媒。 再者，交聯劑及/或觸媒亦可為塗佈時調配至黏著主劑 中之類型，於使用觸媒之情形時，交聯劑亦可為已經調配 至黏著主劑中之類型。 黏著劑於與上述聚石夕氧橡膠成分相同之結構中，相當於二 甲基石夕氧院主鍵一部分之甲基經苯基取代而成之黏著劑。 f且，於聚矽氧黏著劑之二甲基矽氧烷之重複單元中，經 苯土取代之重複單疋為全部重複單元之0.5〜30莫耳％ ’較 佳為1.0〜25莫耳％。 、 =明中之點著劑層亦可進而含有抗氧化劑。作為該抗 =二Γ:Γ抗氧化劑，抗氧化劑、 劑4，該等可單獨使用或混合使用。 為塗===_佈於基材層上而形成點著劑層，作 甲苯等所含有之有機溶劑，可使用：甲苯、二 烧、環！燒=溶劑’己院、庚院、辛貌、異钱、癸 業用汽油、石，，己烷、異烷煙等脂肪族烴系溶劑，工 烴系溶劑，谁本精（petroIeum b㈣吵石腦油溶劑等 而亦可使用，系、醋系、峻系等之各種溶 I6I656.doc 201240036 劑。 作為用於將聚矽氧黏著劑塗佈於基材層上之手段，使用 公知之塗佑士 万法進行塗佈即可，可自逗點刮刀塗佈機 c〇ater)、模唇塗佈機、親式塗佈機、擠壓式塗佈 片L佈機、到刀塗佈機（bia(je coater)、棒式塗佈 吻α式塗佈機、凹板印刷塗佈機、網版塗佈、浸潰塗 佈、漁鑄塗佈等之中採用任意方法。 ^本發明之半導體封裝製程料熱性黏著帶中，至使用 時刖之期間’ $ 了保護黏著劑層亦可使用保護膜。作為保 護膜’例如可列舉：利用聚石夕氧系、長㈣基系 '敗系 盘胺系氧化石夕系之剝離劑等進行剝離處理之包含聚 氣乙烯、氣乙烯共聚物、聚對苯二甲酸乙二酯 '聚對苯二 甲酸丁二_、聚胺基甲酸自旨、乙豨·乙酸乙烯自旨共聚物、 離子聚合物樹脂、乙烯甲基）丙烯酸共聚物、乙稀·（甲基） 丙烯酸酯共聚物、聚苯乙烯、聚碳酸酯等之塑膠膜。又， 對於聚乙4、聚丙稀、聚丁烯、聚τ二稀'聚甲基戊稀等 聚烯烴樹脂系之膜’即便不使用脫模處理劑亦具有脫模 性，因此亦可將其單獨用作保護膜。此種保護膜之厚度較 佳為10〜1 0 0 μηι左右。 實施例 以下，對具體揭示本發明之構成與效果之實施例等進〜 說明。 仃 實施例1 於聚石夕氧系黏者劑（橡膠成分比率7 〇重量)中，& Y，添加於 I6l656.doc 201240036 二甲基矽氧烷主鏈中含有乙烯基與氫矽烷基之二液加成硬 化型聚矽氧橡膠（橡膠成分比率100重量❶/〇,而製備橡膠成 分比率約85重量％之黏著劑。將其塗佈於厚度25 之聚 酿亞胺膜基材層上，並進行乾燥，而製作具有厚度約6 μηι 之黏著劑層之耐熱性黏著帶。 使用手塵輥，於常溫下，於表面施加有鑛錦·纪與鑛薄 金，一邊16 Pin類型之排列而成之銅製引線 框架之外部焊墊側貼合該耐熱性黏著帶。 其人為了再現半導體晶片搭載步驟之加熱處理，而於 200 C下對引線框架進行j小時左右之熟化。 進而，利用環氧系密封樹脂（日東電工製：Η(：·3〇〇β6)， 使用成形機(TOWA製造之Model_Y_seriese)，於⑺。。下， 、預…•又定3移、注入時間12秒、熟化時間秒之條件進 "成形後|彳離耐熱性黏著帶，而製作qfn封裝。 實施例2 ;實施例1之聚石夕氧系黏著劑中，添加二液加成硬化型 聚夕氧橡膠1^製備橡膠成分比率約90重量％之黏著劑。 其後’以與實施例1相同之方法製作QFN封裝。 比較例1 不於黏著劑中、太4 、 加一液加成硬化型之聚矽氧橡膠，除此 以外’以與實施例1相同之方法製作_封裝。 比較例2 於黏著劑中 率40重量％)， ’ & $另外之聚矽氧系黏著劑（橡膠成分比 除此以外’以與比較例1相同之方法製作 I61656.doc 201240036 QFN封裝》 比較例3 於黏著劑中，/由由g . ,Χ μ 卜之低黏著等級之聚矽氧系黏著劑 (橡膠成分比率70舌·S。/、 . …她 ”除此以外，以與比較例1相同之 方法製作QFN封裝。 實施例3 ^用-曱基錢炫主鏈之甲基之—部分經 1(橡膠成分比率8〇重量％ ’其中苯基取代 劍Λ’：不添加二液型硬化型聚矽氧橡膠而製備黏著 。'< ’U與實施例1相同之方法製作QFN封裝。 比較例4 妙= 夕氧炫主鍵之甲基未經苯基取代之另外之聚 —、·者劑（橡膠成分比率80重量％)，除此以外，以與 實施例3相同之方法製作QFN封裝。 ’ 比較例5 f基#氧燒主鍵之甲基未經苯基取代之另外之聚 石夕氧系黏著劑（橡膠成分比率3〇重量％)，除此以外，以與 實施例3相同之方法製作QFN封裝。 ’ 結果 將各膠帶貼合於引線括担^ 、 条上後，確認手動剝離膠帶時之 L/F之引線洋墊部分有盔變 力…殳I，並進行回工性之評 變形之代表例參照圖丨）。又， 對於各骖帶，測定對與上 L/F相同素材之Cu板之勒塞★ _ 反之黏者力。測定係於設想貼附步驟之 承溫、及設想成形步驟之於？ 之於200 C下加熱1小時後於175t J61656.doc 201240036 環境下（以下，稱為高溫黏著力）的2種情況下進行。測定條 件如下所示。 [常溫黏著力測定] 貼附條件：利用2 kg輥來回壓接1次後’於室溫下放置 30 min 測定環境：貼附後，於室溫下進行測定 剝離角度：180° 剝離速度：300 mm/min [高溫黏著力測定] 貼附條件：利用2 kg輥來回壓接1次後，於室溫下放置 30 min 測定環境：貼附後，於20(TC下加熱i小時，並於175它 環境下進行測定 剝離角度：180° 剝離速度：300 mm/min 又，對於藉由上述方式製作之〇]7 ^ 《QFN封裝，觀察有無發生 樹脂洩漏’而進行樹脂洩漏性之士 °卞價（代表例參照圖2) -----^ ------- 橡膠成分比率[wt.%] 中峨·黏者力 回工性 高溫黏著力 樹脂洩漏性 85 —— >UtJ _ ------ mm] 實施例1 包含二液型硬化型橡膠 0.08 〇 jL/F變形 0,94 —--- 〇 實施例2 90 無樹脂洩漏 包含二液型硬化型橡勝 0.04 〇 0.96 '〜---- 〇 比較例1 ^----- 無樹脂洩漏 70 0.51 X 0.63 ---__ 〇 —---- 無樹脂洩漏 161656.doc •13· 201240036 比較例2 40 1.22 ------ X L/F變形 0.69 〇 比較例3 實施例3 70 0.2 〇 jL/F锣报 0.13 热樹月日1¾漏 X 技冬B运、，ib浪 80 含有笨基 0.05 〇 1.98 W ΛΘ /¾ Μ _ — 〇 比較例4 80 0.08 〇 無L/F變形 0.22 热树月日沒漏 X 比較例5 30 3.57 X L/F變形 0.85 樹片曰 >曳漏 〇 ※[/卩：引線框架 圖1係用來確認將引線框架作為對象 之本發明之半導體201240036 VI. Description of the Invention: [Technical Field] The present invention relates to a heat-resistant adhesive tape for a semiconductor packaging process. [Prior Art] In recent years, CSP (Chip Size/Scale Package) technology has attracted attention in the mounting technology of LSI (Large Scale Integration). In this technology, the package of the form of the QFN (Quad FUt N〇n_lead package) that puts the lead terminal into the package is highly concerned with miniaturization and high integration. One of the package forms. In the manufacturing method of such a QFN, the following manufacturing method has been in recent years, in which a plurality of QFN wafers are neatly arranged on a wafer pad of a package pattern region of a lead frame and used in a cavity of the mold. After the sealing resin is sealed in a batch, it is cut into individual QFN structures by cutting, whereby the productivity of the lead frame per unit area is drastically improved. In the method of manufacturing a QFN in which a plurality of semiconductor wafers are sealed in a batch, the area where the molding die is cooled only when the resin is sealed is only the outer side of the resin sealing region which is expanded outward from the package pattern region. Because of &, in the package drawing; the area, especially the center part, it is impossible to press the external lead surface to the molding die with sufficient pressure, and it is extremely difficult to suppress the leakage of the sealing resin to the external lead side, so that the terminal of the QFN is easily generated. The problem of resin coating. ^, compared with the manufacturing method of QFN as described above, the following method is considered to be particularly effective: the external lead side of the lead frame is attached with a point 161656.doc 201240036 with 'by using the adhesive tape The sealing effect of the force (shading) prevents the resin from leaking to the outer lead side when the resin is sealed. In such a manufacturing method, after the semiconductor wafer is mounted on the lead frame in the heat 2丨6 or after the wire bonding is performed, it is substantially difficult after the rod is attached, and the heat-resistant adhesive is initially applied to the β and the zen work. The step k is applied to the surface of the pad other than the lead frame, and then the step of mounting the semiconductor wafer or the wire bonding + 腓4 卞 赵 Zhaoyang piece st ^ 接° step 'to fit the sealing tree The month is up to the end of the step. As such a method, there has been proposed a method of manufacturing a series of steps using a heat-resistant dot tape having an adhesive layer having a thickness of (4) or less, which can prevent leakage while performing wire bonding, etc. (refer to the patent document) Japanese Patent Laid-Open No. 2〇〇2_1848〇ι No. [Invention] The problem to be solved by the invention is that in the case of the semiconductor device, the tape is attached to the lead frame. When the attachment is defective, 'sometimes the tape is peeled off and then reattached (reworked). At this time, if the adhesive force of the tape is too high, there is a deformation of the bow frame when peeling off. Another too ★ ' In the forming and sealing step, if the adhesive force of the tape is too low, it is impossible to spread the road. Only the J is used to exhibit the resin shielding property and leak. Therefore, it is desirable that the adhesive tape is attached to the Dongdong/attachment at room temperature. Therefore, the object of the present invention is to provide a high adhesion force in a molding step of low adhesion to high temperature. Therefore, the object of the present invention is to provide a semiconductor adhesive package for a semiconductor package process, which is used for a semiconductor package process. ,and It is excellent in the workability at the time of attachment at room temperature, and it can prevent resin leakage in the resin sealing step 161656.doc 201240036 under the environment of the horse. The technical means for solving the problem is the present invention. OBJECTIVE: The material and composition of the thermal adhesive tape have been studied. It has been found that the above object can be achieved by using the following adhesive tape: 1 · A heat-resistant adhesive tape for semiconductor packaging process, which is attached to a resin When the semiconductor wafer is sealed, the user attaches to the lead frame, and the heat-resistant adhesive tape has a substrate layer and an adhesive layer, and has a 〇'〇1~0·3 0 M/2G mm for the Cu plate at normal temperature. The micro-adhesive property is improved to 0.50 N/20 mm or more in a high-temperature environment. 2. A heat-resistant adhesive tape for a semiconductor packaging process according to 1, wherein a ratio of a polysulfide rubber component is used in the above adhesive layer. 8〇% by weight or more of a polyoxygen adhesive. 3. A heat-resistant adhesive tape for a semiconductor packaging process such as 1 or 2, wherein the adhesive layer is made of a methyl group of a dimethyl-oxygen-burning primary bond. The polyphenylene oxide adhesive which is partially substituted by a phenyl group. The heat-resistant adhesive tape of the present invention is used for sealing a semiconductor wafer mounted on a lead frame made of metal, and is bonded to a lead frame to be used. Under the application / under the dish, there is a micro-adhesive I, which is designed in such a way that the adhesion is improved under the high temperature environment of the 2nd generation. The adhesion to the lead frame can be realized simultaneously under ten coffees. In the high-temperature forming process, the resin shielding property which does not cause resin leakage occurs is exhibited. 16l656.doc 201240036 [Embodiment] The heat-resistant adhesive tape for semiconductor packaging process of the present invention is sealed with a resin. When the semiconductor wafer is attached to the lead frame and the user is attached to the substrate: the adhesive layer is provided to have a 'adhesive property at normal temperature, and the adhesion is improved under a high temperature environment. Changing the properties of the adhesive layer between high temperatures, that is, the properties of the adhesive, the rework and the resin sealing of the masked lead frame when manufacturing the semiconductor package The metallocene resin to prevent leakage when quenched. In the semiconductor package process of the present invention, the heat-sensitive adhesive tape is required to exhibit the desired properties in the heating of the step. Therefore, the base material layer of the heat-resistant adhesive tape for a semiconductor package process of the present invention must have a melting point of 18 〇t, preferably 26 Å or more. For example, polyethylene terephthalate can be cited. (pET, polyethylene terephthalate) film, polyethylene naphthalate, pEN, polyethylene naphthalate, pES, sulfone, polyether phthalimide (pEI, p〇iyether) Polysulfone (FP〇lysulf〇ne) membrane, polyphenylene sulfide (PPS) membrane, polyetheretherketone (PEEK, p〇lyether ether ... (4)) membrane, polyaryl vinegar (PAR, p〇iyaryiate) membrane , an aromatic polyamide film, a polyimide film, a liquid crystal polymer (LCP) film. The thickness of the base material layer is 5 to 250 μm, preferably 20 to 100 μm, in consideration of workability such as workability and work-back time. The adhesive layer in the present invention is required to have the same heat-resistance as that of the above-mentioned base material layer, I61656.doc 201240036, for example, an adhesive layer containing a polyoxynoxy adhesive. The properties necessary for the adhesive layer are such that it has micro-adhesiveness at normal temperature and the adhesive strength is improved at room temperature, and the stickiness of the shellfish at room temperature is 0.01 to 0.30 N/2 Q mm for the Cu plate. Good for. . 2~. 2. N/2. Adhesive force at high temperature (in the present invention, after heating at 2 〇〇t for 1 hour, the adhesion at 175 ° C is 〇5〇N/2〇mm or more preferably 0) 60 N/20 mm or more. As the (four) agent of the towel of the present invention, in particular, the poly-stone rubber component having a ratio of the poly-coin rubber component of 8 g% by weight or more, or a part of the methyl group of the main chain of the dimethyl methoxyoxane may be used. A poly-oxygen adhesive substituted with a base. In particular, the polyoxynoxy adhesive having a polyoxyxene rubber component ratio of 8% by weight or more is preferably an adhesive comprising a polyvalent adhesive as a resin component and a liquid addition reaction type polyoxyxene rubber. . More preferably, it is an adhesive obtained by crosslinking a polyoxyxylene adhesive as a resin component and a polyoxyethylene rubber component containing a vinyl group by using the polysiloxane crosslinking agent. As the two-liquid addition reaction type polyoxyxene rubber, those comprising a vinyl group-containing polyoxyethylene rubber component and a SiH group (hydroalkylene group) having a polyhydrazine oxygen crosslinking agent can be used. Here, the polyfluorene-based pressure-sensitive adhesive as a resin component is a network-structured organic polyfluorene-based alkane obtained by a dehydration condensation reaction of a hydrolysis reaction of an organic gas decane. X, poly-stone oxide rubber > contains a diorganopolyoxyalkylene having a linear structure. As the organic group, a methyl group or a phenyl group is contained in both the resin component and the rubber component, and may be substituted with an ethyl group, a propyl group, a butyl group or the like. In the case of a two-liquid addition reaction type polyoxyxene adhesive, an addition reaction of ethylene I61656.doc 201240036 with a nitrous oxide base is used for crosslinking of the adhesive. Usually, the ethylene group is partially introduced by substituting the organic group of the polyoxyethylene rubber component. Further, the hydrogen-crushing base is not introduced into the adhesive host side containing the polyoxo-oxygen resin component and the polyoxyxylene rubber component, and is used as a polyfluorene-oxygen crosslinking agent having an arsonylalkyl group. Further, a catalyst such as a platinum catalyst for promoting the reaction is blended in the addition reaction type polyoxyxylene adhesive as needed. Further, the crosslinking agent and/or the catalyst may be of a type which is formulated into the adhesive main component during coating, and in the case of using a catalyst, the crosslinking agent may be of a type which has been formulated into the adhesive main component. The adhesive is the same as the above-mentioned polyoxo rubber component, and is equivalent to an adhesive in which a methyl group of a part of the main bond of dimethyl oxalate is substituted with a phenyl group. f, in the repeating unit of the dimethyloxyoxane of the polyoxyxylene adhesive, the repeating unit substituted by the benzene is 0.5 to 30 mol% of the total repeating unit, preferably 1.0 to 25 mol%. . , the point of the agent layer can also contain antioxidants. As the anti-dioxin: antimony antioxidant, antioxidant, and agent 4, these may be used singly or in combination. A coating layer is formed on the substrate layer by coating ===_, and it is used as an organic solvent contained in toluene or the like, and can be used: toluene, di-burning, ring! Burning = Solvents 'Hangyuan, Gengyuan, Xinjing, Yiqian, gasoline, stone, hexane, iso-alkane and other aliphatic hydrocarbon solvents, industrial hydrocarbon solvent, who is fine (petroIeum b (four) no stone It can also be used as a brain oil solvent, etc., and various soluble I6I656.doc 201240036 agents, such as a vinegar type, a vine type, etc. As a means for apply|coating a poly-oxygen-oxygen adhesive on a base material layer, the well-known It can be coated by the method, and can be used as a self-commenting knife coating machine c〇ater), a lip coating machine, a pro-coating machine, a squeeze coating sheet L cloth machine, a knife coating machine (bia Any method is employed in (je coater), stick-coated kiss alpha coater, gravure coater, screen coating, dip coating, fish casting coating, etc. ^The semiconductor package of the present invention In the heat-adhesive adhesive tape of the process, the protective film may be used as the protective adhesive layer during the period of use. As a protective film, for example, the polysulfide system and the long (tetra)-based system are used. A stripping agent such as a oxidized stone-based stripping agent, which comprises a polyethylene oxide, a gas-ethylene copolymer, and a polyterephthalic acid. Diester 'polybutylene terephthalate _, polyaminocarbamate, acetonitrile vinyl acetate copolymer, ionic polymer resin, vinyl methyl) acrylic copolymer, ethylene (meth) acrylate Plastic film of ester copolymer, polystyrene, polycarbonate, etc. Further, a film of a polyolefin resin such as polyethylene-4, polypropylene, polybutene, or poly-t-thylene polymethylpentene has mold release property even without using a release agent, and therefore it can also be used. Used alone as a protective film. The thickness of the protective film is preferably about 10 to 1 0 0 μηι. EXAMPLES Hereinafter, examples of the constitution and effects of the present invention will be specifically described.仃Example 1 In the polyoxo-oxygen adhesive (rubber component ratio 7 〇 weight), & Y, added to I6l656.doc 201240036 dimethyl methoxy olefin main chain containing vinyl and hydroquinone A two-liquid addition-hardening type polyoxyxene rubber (a rubber component ratio of 100% by weight/〇, and an adhesive having a rubber component ratio of about 85% by weight. It is applied to a layer of a polyaniline film substrate having a thickness of 25). And drying, and producing a heat-resistant adhesive tape having an adhesive layer having a thickness of about 6 μη. Using a hand-dust roller, at a normal temperature, a mineral gold, a gold, and a thin gold are applied to the surface, and the arrangement is 16 Pin type. The heat-resistant adhesive tape is bonded to the outer pad side of the formed copper lead frame. In order to reproduce the heat treatment of the semiconductor wafer mounting step, the lead frame is aged for about 1 hour at 200 C. Further, the ring is used. Oxygen-based sealing resin (manufactured by Nitto Denko: Η(:·3〇〇β6), using a molding machine (Model_Y_seriese manufactured by TOWA), at (7). Next, pre-..., 3 shifts, injection time 12 seconds, curing Time and second conditions After the heat-resistant adhesive tape was peeled off, a qfn package was produced. Example 2 In the polysorbate adhesive of Example 1, a two-liquid addition-hardening type polyoxygen rubber was added to prepare a rubber component ratio of about 90. % by weight of the adhesive. Thereafter, a QFN package was produced in the same manner as in Example 1. Comparative Example 1 In the adhesive, too 4, plus one liquid addition-hardening type polyoxymethylene rubber, except In the same manner as in Example 1, the package was prepared. Comparative Example 2 (40% by weight in the adhesive), '& $Additional polyoxygenated adhesive (the rubber component ratio was otherwise) and Comparative Example 1 The same method was used to make I61656.doc 201240036 QFN package. Comparative Example 3 In the adhesive, / a low adhesion grade polyoxygenated adhesive consisting of g. , Χ μ Bu (rubber composition ratio 70 tongue · S. /, In addition to this, a QFN package was produced in the same manner as in Comparative Example 1. Example 3 ^------------------------------------ Phenyl substituted scorpion': Adhesive is prepared without adding two-component type hardening type polyoxymethylene rubber '<'U was fabricated in the same manner as in Example 1 to make a QFN package. Comparative Example 4: The other group of the methyl group of the oxy-xanthene primary bond which was not substituted with a phenyl group (the rubber component ratio of 80% by weight) A QFN package was produced in the same manner as in Example 3 except that the same was carried out in the same manner as in Example 3. 'Comparative Example 5 f-group-oxygen-based primary bond methyl group was not substituted with phenyl group, and other polyoxazine-based adhesive (rubber component ratio) A QFN package was produced in the same manner as in Example 3 except that the weight was 3% by weight. The part of the ocean mat has the force of the helmet...殳I, and the representative example of the reworkability is shown in the figure 参照). In addition, for each sling, the smear of the Cu plate of the same material as the upper L/F was measured. The measurement is based on the temperature assumption of the attachment step and the assumption of the forming step. After heating at 200 C for 1 hour, it was carried out in two cases of 175 t J61656.doc 201240036 (hereinafter referred to as high-temperature adhesion). The measurement conditions are as follows. [Measurement of adhesion at room temperature] Attachment conditions: After pressing back and forth for 1 time with a 2 kg roller, 'Place at room temperature for 30 min. Measurement environment: After attachment, measure at room temperature. Peeling angle: 180° Peeling speed: 300 Mm/min [Measurement of high-temperature adhesion] Attachment conditions: After back-pressing with a 2 kg roller, place it at room temperature for 30 min. Measurement environment: After attachment, heat at 20 °C for 1 hour, and at 175 In this environment, the peeling angle was measured: 180° peeling speed: 300 mm/min. For the 〇] 7 ^ "QFN package, the presence or absence of resin leakage occurred in the QFN package, the resin leakage property was observed. (Representative example refers to Figure 2) -----^ ------- Rubber composition ratio [wt.%] 峨· viscous force return work high temperature adhesive resin leakage 85 —— >UtJ _ ------ mm] Example 1 Contains two-component type hardening rubber 0.08 〇jL/F deformation 0,94 —--- 〇 Example 2 90 No resin leakage including two-liquid type hardening rubber wins 0.04 〇 0.96 '~---- 〇Comparative example 1 ^----- No resin leakage 70 0.51 X 0.63 ---__ 〇—---- No resin leakage 161656.doc 13· 201240036 Comparative Example 2 40 1.22 ------ XL/F deformation 0.69 〇Comparative example 3 Example 3 70 0.2 〇jL/F锣Report 0.13 Hot tree month 13⁄4 leak X Technical winter B transport, ib wave 80 contains stupid base 0.05 〇1.98 W ΛΘ /3⁄4 Μ _ — 〇Comparative example 4 80 0.08 〇No L/F deformation 0.22 Hot tree month without leak X Comparative example 5 30 3.57 XL/F deformation 0.85 Tree 曰 曰Leakage ※[/卩: lead frame Figure 1 is used to confirm the semiconductor of the present invention with the lead frame as the object

封裝製程用耐熱性黏著帶之效果的圖。雖然於未發生L/FA diagram of the effect of a heat-resistant adhesive tape for a packaging process. Although L/F did not occur

^形之例中，於引線焊墊部分未發現變形，但於發生L/F 變形之例中，於以虛線包圍之部分發現引線焊墊之方向改 變等變形。 又，圖2係用於確認有無利用密封樹脂進行成形後之樹 脂洩漏的圖。#知如下情況：於未發生樹脂洩漏之例中， 由於树月曰未洩漏’ &而樹脂未流出至密封部位之外然而 於發生樹脂@漏之例巾’由於樹m樹脂流出至密封 部位之外。 於實施例1中，Μ 士、、夫丄 . 猎由添加二液型硬化型聚矽氧橡膠，黏 著劑之橡膠成77比率較高為85重量％，於常溫下具有微黏 著性’因此—次刻離膠帶時之L/F未變形，回工性良好， 且於两溫下具有高类i ^ I . 旁门點者性’因此可防止成形後之樹脂洩 漏。 於實施例2中，與實施例1相同地，藉由添加二液型硬化 161656.doc -14- 201240036 型聚碎氧橡膠，黏著劑之橡膠成分比率較高為90重量0/〇, 於常溫下具有微黏著性，且於高溫下具有高黏著性，因此 可同時實現回工性與防止樹脂洩漏。 於比較例1及2中，雖然可防止樹脂洩漏，但聚矽氧橡膠 比率為70重量％，又，常溫下之黏著力較高，因此於膠帶 剝離時引線框架變形，回工性不良。 比較例3之常溫接著力較低為〇 2〇 N/2〇 ，因此即便 橡膠成分比率為70%，回工性亦優異，但高溫接著力較低 為〇 1 3 N/20 mm，因此發生樹脂洩漏。 於實施例3中，黏著劑之二甲基矽氧烷主鏈之甲基經笨 基取代’於常溫下具有與實施例！及2相同之〇 〇5 n/2〇醒 之黏著力具有微黏著性’藉此—次剝離膠帶時之Μ未 變形，回工性良好，庄於古、田 + 且於冋激下黏者力為1.98 N/20 mm , 具有高黏著性，因此可防止成形後之樹脂茂漏。於含有苯 基之情形時’可確認提高高溫之黏著性。 於比較例4中，黏著劑夕一 ^ 基氧鏈之甲基未經 本基取代，於常溫下黏著力 刀為0.08 N/20 mm，具有微黏著 性，因此一次剝離膠帶時 J心禾變形，回工性良士 於高溫下黏著力亦較低為〇 仁 靡。 22咖_，因此無法防止樹 於比較例5中，黏著劑之_ 苯基取代，於高溫下黏著力：〇基㈣院主鏈之甲基未經 性，因此可防止樹脂、4〇·85Ν/2〇_，具有高黏著 獅顏，因此於膠 但f溫下之黏著力較高為3.57 膠帶制離時弓I線框架變形，回工性較 161656.doc • 15 - 201240036 差。 根據以上之結果，本發明可提供一種半導體封裝製程用 对熱性黏著帶，其係用於半導體封裝製程者，並且於常溫 下之貼附時之回工性優異，且於高溫環境下之樹脂密封步 驟中可防止樹脂洩漏。 【圖式簡單說明】 圖1係關於L/F變形之實施例及比較例之結果。 圖2係關於樹脂浪漏產生之實施例及比較例之結果。 I61656.doc 16-In the example of the shape, no deformation was observed in the lead pad portion, but in the case where the L/F deformation occurred, the direction in which the lead pad was changed in the portion surrounded by the broken line was found to be deformed. Further, Fig. 2 is a view for confirming the presence or absence of resin leakage after molding with a sealing resin. #Know the following situation: In the case where no resin leakage occurred, the tree was not leaked and the resin did not flow out to the sealing portion, but the resin was leaked due to the resin@漏. Outside. In the first embodiment, the scorpion, the scorpion. The hunter is added with a two-component type hardening type polyoxymethylene rubber, and the rubber of the adhesive has a ratio of 77 to 85% by weight, and has a micro-adhesive property at normal temperature. The L/F is not deformed when it is peeled off from the tape, and the workability is good, and it has a high class i ^ I at two temperatures. The side door point 'can prevent the resin from leaking after forming. In the second embodiment, as in the case of the first embodiment, by adding the two-liquid type hardening 161656.doc -14-201240036 type polyoxyethylene rubber, the rubber composition ratio of the adhesive is higher than 90% by weight/〇, at room temperature. It has micro-adhesiveness and high adhesion at high temperatures, so it can simultaneously achieve rework and prevent resin leakage. In Comparative Examples 1 and 2, although the leakage of the resin was prevented, the ratio of the polyoxyxene rubber was 70% by weight, and the adhesion at normal temperature was high. Therefore, the lead frame was deformed when the tape was peeled off, and the workability was poor. In Comparative Example 3, the normal temperature adhesion was as low as 〇2〇N/2〇, so even if the rubber component ratio was 70%, the workability was excellent, but the high temperature adhesion was lower than 〇1 3 N/20 mm, and thus occurred. The resin leaked. In Example 3, the methyl group of the dimethyl methoxy siloxane main chain of the adhesive was substituted with a stupid base at room temperature and with the examples! And 2 the same 〇〇 5 n / 2 awake adhesion has micro-adhesive 'by this - peeling tape when the Μ is not deformed, good workability, Zhuang Yu, Tian + and sputum The force is 1.98 N/20 mm and has high adhesion, thus preventing resin leakage after forming. When the phenyl group is contained, it is confirmed that the adhesion at a high temperature is improved. In Comparative Example 4, the methyl group of the adhesive oxygen group was not substituted by the base group, and the adhesive knife at room temperature was 0.08 N/20 mm, which was slightly adhesive, so that the J-heart was deformed when the tape was peeled off once. The returning good character is also low in adhesion at high temperatures. 22 coffee _, therefore can not prevent the tree in the comparative example 5, the adhesive _ phenyl substitution, adhesion at high temperature: thiol (four) yard main chain methyl unsaturation, thus preventing resin, 4 〇 · 85 Ν /2〇_, with high adhesion to the lion's face, so the adhesion at the glue but f temperature is 3.57. When the tape is separated, the bow I-line frame is deformed, and the return work is worse than 161656.doc • 15 - 201240036. According to the above results, the present invention can provide a thermal adhesive tape for a semiconductor packaging process, which is used for a semiconductor packaging process, and has excellent workability at the time of attachment at a normal temperature, and is sealed in a high temperature environment. The resin is prevented from leaking in the step. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows the results of an example of a L/F deformation and a comparative example. Fig. 2 shows the results of examples and comparative examples of resin leakage. I61656.doc 16-

Claims (1)

201240036 七、申請專利範圍： L 一種半導體封裝製程用耐熱性黏著帶，其係於樹脂密封 半導體晶片時貼附於引線框架上而使用者，並且上述耐 熱性黏著帶具有基材層與黏著劑層，於常溫下對Cu板具 有0.01〜0.30 N/20 mm之微黏著性，於高溫環境下黏著力 提高為0.50 N/20 mm以上。 2·如凊求項1之半導體封裝製程用耐熱性黏著帶，其中於 上述黏著劑層中，使用聚矽氧橡膠成分比率為80重量％ 以上之聚石夕氧黏著劑。 3.如叫求項1或2之半導體封裝製程用耐熱性黏著帶，其中 於上述黏著劑層中，使用二曱基矽氧烷主鏈之甲基之一 部分經苯基取代之聚矽氧黏著劑。 161656.doc201240036 VII. Patent application scope: L A heat-resistant adhesive tape for semiconductor packaging process, which is attached to a lead frame when the resin is sealed with a semiconductor wafer, and the heat-resistant adhesive tape has a substrate layer and an adhesive layer The Cu plate has a micro-adhesion of 0.01 to 0.30 N/20 mm at normal temperature, and the adhesion is increased to 0.50 N/20 mm or more in a high temperature environment. 2. The heat-resistant adhesive tape for a semiconductor package process according to Item 1, wherein a polysulfide rubber component having a polyoxyxene rubber component ratio of 80% by weight or more is used for the pressure-sensitive adhesive layer. 3. The heat-resistant adhesive tape for a semiconductor package process according to claim 1 or 2, wherein in the above adhesive layer, a part of a methyl group of a dimercapto siloxane main chain is bonded with a phenyl group. Agent. 161656.doc
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KR20190086429A (en) 2016-11-24 2019-07-22 린텍 가부시키가이샤 METHOD FOR MANUFACTURING BOTTLE SILICON ADHESIVE SHEET
WO2022259869A1 (en) 2021-06-07 2022-12-15 フジコピアン株式会社 Heat resistant adhesive film

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JP4343943B2 (en) * 2006-11-24 2009-10-14 日東電工株式会社 Heat-resistant adhesive tape for semiconductor device manufacturing

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