201239340 六、發明說明： 【發明所屬之技術領域】 本發明涉及可在光罩修復程序中用於修復缺陷區域之 裝備中’加強穿透率量測功能之技術，尤其，涉及可在 修復程序期間即時量測透射率之技術，以減少處理時間 及加強可靠性及再現性。 【先前技術】 形成半色調光罩或光罩之程序簡化了半導體/LCD 程序，然而，光罩產製之額外程序可能導致程序增加。 換言之，當光罩產製中的缺陷或諸如針孔之缺陷存在 時，南修復光罩以使用之。為修復傳輸反射部分中之缺 區域，穿透率被適當地控制，以使傳輸反射部分中之 經修復區域及相鄰的非缺陷區域同等程度（lad)地透射 光線’從而使最後一層（殘餘層）有均勻厚度。 換言之，若諸如針孔之缺陷出現在半色調光罩之傳輸 反射層中，則穿經傳輸反射層的光線量在層内改變。因 此，在使用光罩以形成光阻層或有機絕緣層的程序中， 曝光能量隨區域而改變，結果，殘餘層厚度不均，使其 難以達成有均勻厚度之殘餘層。如以上這般形成之厚度 差異可於後續程序中，諸如於蝕刻、電漿清洗或類似程 序中，在不希望之部分產生缺口，因此導致缺陷。故此， 傳輸反射部分之缺陷區域需要修復。 201239340 在相關技術中’為使傳輸反射部分中之缺陷區域及相 鄰的非缺陷區域有同等程度的透射率，採用了一方法， 其移除傳輸反射部分中之缺陷區域’並利用-電子束技 術在傳輸反射部分沉積一微細二進制（binary)圖案，以利 用微細圖案之繞射現象，而毋需使用雷射。 使用現有雷射沉積及修正’以經由雷射沉積修復缺陷 區域之修復程序，係一待修復物體實施1〇〇%透射率或零 屏蔽之技術。因此’人們對該程序的興趣集中於沉積薄 膜及修正區域之品質與大小。 然而由於光罩大小增加’而電子束技術需要使用真 空腔室，因此不可能應用該技術於該程序且使用現有 雷射修復方法來執行半色調修復有許多困難。特別地， 甚至在經由雷射沉積修復缺陷區域後’需測量透射率以 使經修復區域之透射率與其他區域之透射率相符。在此 狀況下，由於用於穿透率量測之褒備係獨立地運作，所 以難以執行連續性程序，且需要容納裝備之空間及設備 投資，因此提高成本，且大大增加程序時間。 第1圖圖示相關技術之量測裝置1G，其藉由波長範圍 量測晶圓或金屬樣本之透射率或反射率。至於相關之量 測裝置10的運作如下：待測樣本20置放於量測平台上， 而-光源提供光線以穿透樣本。該光線藉由光線接收元 件而被感應，然後藉由光譜儀30成為複數頻譜成分，然 後電腦40計算透射率程度。 然而，在根據相關技術之獨立透射率量測裝置中，進 201239340 行量測之區域大小與光線接收元件大小直接相關。在裝 置ΐ測7至ι〇φ程度之微細區域之透射率之情況下，需 要使用分離式光學系統，此乃增加整體製造成本之一因 素。 至於其他方法如下.可藉由比較依上述方法量測之關 於穿透率之數據，以及經測量穿透率之區域之影像，以 。十算穿透率。然而，本方法無法確保量測數值之可靠性。 【發明内容】 因此，本發明之一目的係有效地提供一即時穿透率量 測系統，其能在使用雷射修復系統修復光罩之期間，即 時里測穿透率，以加強修復程序之可靠性及再現性，及 最大化成本降低效應。 因此，本發明之另一目的係有效地提供一穿透率量測 系統，其容許使用現有之修復系統之光學系統，而毋須 額外使用分離式光學系統，以排除因現有透射率量測裝 備之獨立安裝所造成的不具經濟效益的層面，諸如支出 增加、運作延期、裝備分別佔用，以及類似狀況，且可 廣泛應用於具備各種光學系統的量測裝備。 根據本發明之一態樣，一即時透射率量測系統包含： 位於一平台之上之一上部光學系統，供一待測物放置於 該平台上，該上部光學系統係沿著一光徑配置；以及位 於該平台之下之一下部光學系統，該下部光學系统容許 201239340 經透射光照向上穿過該平台，其中該即時透射率量測系 統進一步包含一透射率量測單元，其接收由該上部光學 系統及該下部光學系統提供之光學資訊，以量測透射率。 該上部光學系統可包含：位於該平台之上之一第一物 鏡及一第一管透鏡’該第一物鏡及該第一管透鏡係沿著 該光徑配置，以及位於該第一物鏡及該第一管透鏡之間 之一反射光照部分，該反射光照部分提供經反射光照。 該下部光學系統可進一步包含：位於該平台下之一透射 光照部分，該透射光照部分投射經透射光照至該平台； 以及沿著該經透射光照之一光徑相間隔之一第二物鏡及 一第二管透鏡。 該透射光照部分之該經透射光照及該反射光照部分之 該經反射光照可具有不同波長。 該下部光學系統可進一步在該透射光照部分及該第二 管透鏡之間包含一光形控制部分（光柵（slit)或遮罩），該 光形控制部分用以減少該經透射光照之一大小。 該透射光照部分可具有一結構，其容許該經透射光照 為該經透射光照之大小控制而移動，而該第二物鏡可包 含一移動部分’允許在其上以一垂直方向控制位置。 該透射率量測單元可包含至少一光譜儀，其接收來自 該下部光學系統之該經透射光照，並分離該所接收光照 為複數頻譜成分。該透射率量測單元可配置於介於該平 台與該第一物鏡間之一第一位置，或該透射率量測單元 可配置於一第二位置，以接收穿經該第二管透鏡之經透 201239340 射光照。 該透射率量測單元可包含：接收該經透射光照之—準 直透鏡，以及與於該準直透鏡相間隔分開之一濾光鏡； 以及一光線接收元件，其最終接收該經透射光照並傳送 該所接收光照至一光譜儀。 根據本發明之另一態樣，所提供之一即時透射率量測 系統包含：位於一平台之上之一上部光學系統，供—待 測物放置於該平台上，該上部光學系統係沿著一光徑配 置；以及配置於該平台之下之一透射光照部分，其中該 即時透射率里測系統更可包含一透射率量測單元，其接 收關於來自該上部光學系統並入射於其上之經光柵光照 之光學資訊，或來自該透射光照部分之經透射光照之光 學資訊，以量測穿透率。 該上部光學系統可包含：位於該平台之上之一第三物 鏡及一第三管透鏡’該第三物鏡及該第三管透鏡係沿著 該光徑配置；位於該第三物鏡及該第三管透鏡之間之一 反射光照部分’該反射光照部分投射經反射光照；以及 位於該第三管透鏡之上之一光柵光照部分，該光柵光照 部分投射該經光栅光照。該光柵光照部分可包含一光形 控制部分，其控制光線之一大小，以決定一被量測部分 之一大小。 該透射率量測單元可包含至少一光譜儀，其接收來自 該光栅光照部分或該反射光照部分之光線，並將該所接 收之光線分離為複數頻譜成分。 201239340 該透射率量測單元可配置於介於該平台與該透射光照 部分間之一第二位置，並將穿經該待測物之來自該經光 柵光照之光線分離為複數頻譜成分。 該透射率量測單元可配置於一第四位置，以接收穿經 該第三管透鏡之該經透射光照。 該透射率量測單元可包含：接收該經透射光照之一準 直透鏡，及與該準直透鏡相間隔分開之一濾光鏡；以及 光線接收元件’其最終接收該經透射光照並傳送該所 接收光照至該光譜儀。 該經光柵光照及該經透射光照可具有不同波長。 根據本發明之該諸態樣之具備上述結構之該即時透射 率量測系統，可作為獨立透射率量測裝備，廣泛應用於 需要透射率量測之各種裝備，且特別地，可與使用一雷 射修復-半色調光罩之一缺陷區域之農備結合，以即時 量測該修復區域之穿透率，或作為-整合系統，在修復 程序之後單獨地量測穿透率。 【實施方式】 下文係根據本發明實施狀配置與運作 如附圖式而加以描述。 好”，， 參照第2圖及笛q国 例的透射率量據本發明之-實施 描㈣透射二=而第3圖是圖示第2圖， 射羊里測系統配置之概念視圓。在第3圓卜 201239340 以虛線方塊表示的雷射發 ^ ^ ^〆 早兀圖不以下實例：根據該 貫施例的糸統，係用於光罩 a* « . 4. ^ 干巳調先罩之雷射沉積修 復裝置。在根據實施例之獨立 里項]系統中，可劣略圓+ 的雷射發射單“略圖不 根據該實施例，即時读^^ •曰 吁透射率置測系、統包含上部光學系 統200，其係沿著光徑配置於二 十〇 100之上，而待測物 放置於該平台上，以及下部光學系統300,其係沿著光 徑配置於平台剛之下，並容許經透射光照向上穿過平 台⑽。此外’即時透射率量測系統亦包含一透射率量 測單元400，其係、配置於上部光學系統2⑼或下部光學 系統3 0 0之至少一處，祐垃dA_山 地並接收由上部光學系統2〇〇或下 部光學系統300經透射之光學資訊，以量測其透射率。 根據該實施例，一待測物係放置於平台1〇〇上。當要 量測該物體時，可配置光罩或半色調光罩，以測量:透 射率或反射率。顯然，可配置不同類型的物體以量測其 透射率。 該上部光學系統200係配置為一系統，以確保及觀測 根據本實施例之即時量測系統中的入射光徑。更詳細 地，上部光學系統200可包含第一物鏡21〇，其與平台 100在朝上之方向相間隔分開’以及第一管透鏡22〇，其 與第一物鏡2 10在朝上之方向相間隔分開。此外，上部 光學系統2 0 0可進一步包含反射光照部分2 3 0，其配置 於第一物鏡210及第一管透鏡220之間，並提供經反射 光照，以及雷射自動對焦240。電荷耦合元件（CCD)部分 201239340 250用以檢驗穿透率、修復狀態，或提供反射率。 該下部光學系統3〇〇可包括透射光照部分⑽，其自 待測物被放置的平台之下提供經透射光照，並包括沿著 透射光照部分310之經透射光照的一光徑相間隔第二物 鏡330及第二管透鏡。 該下部光學系統300可進一步包含光形控制部分 340,其位在透射光照部分31〇及第二管透鏡32〇之間， 以減少經透射光照之大小。光形控制部分3 4 〇可包含光 柵或遮罩。 為減少經透射光照之大小，透射光照部分3丨〇可控制 其光照向左或向右’而光形控制部分3 4 〇亦可藉由使用 光柵或遮罩’以控制由透射光照部分3 1 〇所投射出的光 照之大小。 根據該實施例，透射率量測系統可包含一個或多個透 射率量測單元400。亦即，透射率量測單元4〇〇可配置 於平台100及第一物鏡210之間（亦即，在第一位置處）， 或配置於第一管透鏡220之上，以接收已穿過第一管透 鏡220之經透射光照。當然，透射率量測單元4〇〇可分 別配置於第一位置及第二位置處。 s亥透射率量測單元400基本上可包含準直透鏡41〇、 濾光鏡420、以及光接收元件430，準直透鏡410接收由 下部光學系統3 00之透射光照部分3丨〇所提供的光照， 光接收元件430將接收到的經透射光照透射至光譜儀 440。在此狀況下’濾光鏡420可運用截止濾光片過濾（當 10 201239340 使用不同波長之光照時可能產生的）波長之入射。 以上之配置可應用於配置於第一位置或第二位置處之 透射率量測單元400。進入光譜儀440之光照被分離為 複數頻譜成分’接著進行光譜分析，以獲得透射率之程 度。此外，如圖式所示，上部及下部光學系統2〇〇及3〇〇 中有複數個分光鏡（未示於圖式），以維持光徑。 現在將透過量測使用雷射沉積之修復程序後之半色調 光罩之透射率之程序’以扼要地描述本實施例之運作。 在此狀況下，如第3圖中所描繪的雷射形成於上部光學 系統200之上。 待測物放置於平台100上’而下部光學系統3〇〇之透 射光照部分3 10 ’藉由經過第二管透鏡32〇及第二物鏡 330之光照輻射（irradiate)—量測區域。然後在第一位置 之透射率量測單元400接收自下部光學系統3〇〇所透射 之光線’並量測透射率。當然’當透射率量測單元4〇〇 位於第二位置，可在第二位置量測透射率。 此外’當一修復程序在半色調光罩之缺陷區域上執行 時，為即時量測該程序之進度及穿透率，可藉由反射光 照部分230所提供之經反射光照，亦可透過CCD部分 250 ’以觀察平台1 〇〇上之工作進度狀態。此外，亦可同 時藉由來自下部光學系統300之經透射光照來量測穿透 率。在此狀況下’表層光照（epi-iUumination)及經透射 光照可不同地方式配置，以加強量測之準確度。當然， 當未直測穿透率時’程序處理狀態甚至可藉由經透射光 201239340 照來觀察。 換5之’除了透射率量測外的程序(亦即，在光罩中之 缺陷區域之修復程序， 包3丰色調光罩）在進行中時，根 :貫μ列之即時透射率量；則系統量測^夺透射率，並 …。果。此外’即時透射率量測系統可以作為一獨 立程序，僅執行透射率量測。 以下，本發明之另一實施例將參照第4圖及第5圖而 、描述第4圖乃一方塊圖，圖示根據本發明之另一 實施例之配置’而第5圖是第4圖之實施例之概念視圖。 上：光學系統200及平台100之基本配置及第3圖之前 實施例中之基本配置相同，且相同部分標以相同元件 符號。第5圖中，以虛線方塊表示的雷射發射單元，圖 示根據本實施例之系統係在光罩（包含半色調先罩）之雷 射沉積修復裝置t之情形。在根據本發明實施例之獨立 量測系統中，可省略圖示的雷射發射單元A。 在本實施例中，並未呈現前一實施例中之下部光學系 統’且上部光學系統含有一光柵光照部分。在該系統中， 可藉由分析在平台100的下側之通過待側物之經光柵光 照，以量測穿透率。 更詳細地’根據本實施例之即時透射率量測系統包含 上部光學系統200及配置於平台1 〇〇下之透射光照部分 3〇〇 ’不含前一實施例中之下部光學系統。上部光學系統 200包含第三物鏡2 1 0及第三管透鏡220，其係沿著光徑 配置於平台1 00之上。上部光學系統2〇〇包含反射光照 12 201239340 部分230及光柵光照部分260，反射光照部分230係配 置於第三物鏡2丨〇及第三管透鏡22〇之間，光柵光照部 分260係位於第三管透鏡220之上並投射經光柵光照。 光形控制部分270與光柵光照部分260相間隔分開，並 控制光線之大小，以決定被量測部分之大小。 此外，透射光照部分3〇〇配置於平台1〇〇之下，且來 自於透射光照部分300之經透射光照入射至平台1 〇〇， 並穿經待測穿透率之部分。 此外，反射光照部分230及雷射自動對焦240可位於 弟二管透鏡220及第三物鏡210之間。 此外’根據本實施例’透射率量測單元4〇〇可配置於 平台100之下（亦即，在第三位置處），因而來自光柵光 照部分260之光線可向下穿經平台1〇〇，並被光線接收 元件430接收，然後分離為複數頻譜成分。或者，透射 率量測單元400亦可配置於第三管透鏡22〇之上（亦即， 在第四位置處）’或兩個透射率量測單元4〇〇可分別配置 於第三位置及第四位置處。 根據第4圖之實施例之即時透射率量測系統之運作機 制如下。 首先，來自光栅光照部分260之光線經光形控制部分 270所控制。而後，經控制之光線經由第三管透鏡22〇 及第三物鏡210穿經待測物，然後向下穿經平台1〇〇。 因此’該光照僅輻射該物體之一需被量測之對應區域， 」後被接收。依照上述方式接收之經光柵^照的光線入 13 201239340 射至透射率量測單元400，其配置於第三位置。在透射 率量測單元400中，經光柵光照的光線經由準直透鏡41 〇 及濾光鏡420 ’由光接收元件430透射至光譜儀440，並 因而在其内分離為複數頻譜成分。此資訊係藉由一控制 單元電腦來分析，因而獲得一穿透率程度。 當然’當透射率量測單元400配置於第四位置時，來 自於平台1 00之下之透射光照部分300之經透射光照， 經由平台100’第三物鏡210及第三管透鏡220抵達第 四位置’或來自反射光照部分230的反射光線被接收， 因此位於第四位置之透射率量測單元4〇〇可量測反射率 及穿透率。即使在此狀況下’透射光照部分3 1 〇、反射 光照部分230及光柵光照部分260可經配置以產生不同 波長之光線。 根據該實施例’即時透射率量測系統可應用於量測光 罩、半色調光罩或類似物之穿透率之裝備，或量測薄膜 厚度之裝備’以及各種需要量測反射率的裝備之裝備。 以下’將描述根據該實施例之即時透射率量測系統之 —應用例。在本應用例中，即時透射率量測系統係應用 於可在半色調光罩中之缺陷區域上執行雷射沉積的裝 備’或可即時量測修復區域之穿透率的裝備。 第ό圖係一示意圖’圖示使用雷射離子沉積以修復缺 陷區域之裝備，其中缺陷係呈現於腔室中半色調光罩之 半色調區域内。換言之，根據該實施例之透射率量測系 ~T配置’來與使用利用雷射之離子沉積以修復光^ 14 201239340 (或半色調光罩）之缺陷區域之裝備結合，因此可用來和 修復程序同步地或單獨地量測目標光罩（或半色調光罩） 之缺陷區域内的穿透率程度。 換言之，氣體反應腔室600位於平台1〇〇之上，原料 經由進料線a、b及c進入氣體反應腔室，以提供自外部 引入之沉積原料，而提供之原料藉由雷射而沉積（r卜在 此狀況下，在氣體反應腔室6〇〇上之光學系統5〇〇為光 照提供雷射光線，故可觀測該程序。 參照第7圖，現在將更詳細地描述光學系統5〇〇之配 置。光學系統500係配置以執行利用雷射之修復程序。 基本上’該雷射在腔室e中之待修復物體上執行一沉積 程序，且CCD相機530係經配置以觀察該程序。 複數個分光鏡S係在發射雷射光線之雷射頭部分底 下，沿著雷射光線路徑排列，且可有雷射光線形狀控制 部分(亦即，光柵遮罩）、管透鏡54〇、物鏡55〇、帶 有一光學窗之腔室C、基板560、自動對焦、別及CCD 相機530。當根據該實施例之下部光學系統·依上述 =基本配置形成’來自平台⑽之經透射光照向上穿經 :口 10G’且因此可藉由上述之根據該實施例之透射率 量測單元400,而被即時量測穿透率。當然，透射率量 測單元400可配置於上述之第一位置或第二位置。 此外，根據該實施例之即時透射率量測系統不僅可库 用於半色調修復裝備，亦可應用於其他需要透射率量測 的裝備，亦且可量測薄膜之穿透率、反射率及厚产。再 15 201239340 者’根據該實施例之即時透射率量測系統亦可應用於在 0.5微米或更小的微細區域執行量測，以使待測區域間 的移動更為容易，且提供量測上之精確度。 如上所述，根據本發明之該實施例，提供該即時透射 率罝測系統，其能在使用雷射修復系統之光罩修復程序 期間，可靠地即時量測穿透率，以加強修復程序之可靠 性及再現性，同時大大減少程序時間及最大化成本降低 效應。 特別地，可使用修復系統之光學系統，而毋須額外配 置的光學系統，以排除因現有透射率量測裝備之獨立安 裝所造成的不具經濟效益的層面，諸如支出增加、運作 延期、裝備分別佔用，以及類似狀況。 此外，即時透射率量測系統可廣泛應用於具備各種光 學系統的量測裝備，且可量測薄膜之穿透率、反射率及 厚度，亦可在0.5微米或更小的微細區域執行量測以 使待測區域間的移動更為容易，且提供量測上之精確度。 此外，就現有量產系統而言，由於透射率量測裝備&係 與光罩修復裝備係分開酉己置，經修復物體f要轉移至透 射率量測裝備，以量測經修復位置之穿透率程度。然而， 根據本發明，該即時透射率量測系統即時量測透射率， 同時排除因為裝備轉移時間及因為在轉移過程中之粒子 產生及增加，所造成的產量減少。因 0蜡由在缺陷區 域修復之後直接再沉積一薄膜，其穿锈 牙边羊相較於藉由濺 鍍而在最初形成的薄膜而言，可得刭 徑制。因此，可確 201239340 保品質之足夠的可靠性及再現性，現有的透射率量測裝 備並非用以量產，且生產良率亦可增進。 儘管本發明已藉實施例展示及描述，許多不偏離所附 請求項所定義之本發明之精神及範疇之修改及變化對於 熟習此項技藝者乃顯而易見。 【圖式簡單說明】 根據以上結合隨附圖式所進行之所選實施例之詳細描 述’本發明之上述及其他之目的及特徵將顯而易見，其 中： 第1圖係圖不根據相關技術之穿.透率量測農置之配置 之一視圖； 第2圖係根據本發明之一實施例之穿透率量測系統之 一方塊圖； 第3圖係圖示第2圖中描繪的透射率量測系統配置之 概念視圖； 第4圖係根據本發明之另一實施例之穿透率量測系统 之一方塊圖； 第5圖係第4圖中描繪的透射率量測系統之概念視 圖；以及 第6圖及第7圖係圖示根據本發明之實施例之透射率 量測系統之應用例之視圖。 17 201239340 【主要元件符號說明】 10 相關技術之量測裝 20 待測樣本 置 30 光譜儀 40 電腦 100 平台 200 上部光學系統 210 第一物鏡 220 第一管透鏡 230 反射光照部分 240 雷射自動對焦 250 電荷耦合元件部分 260 光柵光照部分 270 光形控制部分 300 下部光學系統 310 透射光照部分 320 第二管透鏡 330 第二物鏡 340 光形控制部分 400 透射率量測單元 410 準直透鏡 420 濾光鏡 430 光接收元件 440 光譜儀 500 光學系統 510 雷射光形控制部分 520 自動對焦 530 CCD相機 540 管透鏡 550 物鏡 560 基板 600 氣體反應腔室 C 腔室 R 沉積 18201239340 VI. Description of the Invention: [Technical Field] The present invention relates to a technique for enhancing the penetration measurement function in an apparatus for repairing a defective area in a reticle repair program, and in particular, during the repair process Instantly measure transmission rate technology to reduce processing time and enhance reliability and reproducibility. [Prior Art] The procedure for forming a halftone mask or mask simplifies the semiconductor/LCD program, however, additional programs for the mask production may result in an increase in the program. In other words, the south repair reticle is used when a defect in the production of the reticle or a defect such as a pinhole exists. In order to repair the missing area in the transmission reflection portion, the transmittance is appropriately controlled so that the repaired area in the transmission reflection portion and the adjacent non-defective area transmit the light to the same extent (lad), thereby making the last layer (residual Layer) has a uniform thickness. In other words, if a defect such as a pinhole appears in the transmission reflective layer of the halftone mask, the amount of light passing through the transmission reflection layer changes within the layer. Therefore, in the procedure of using a photomask to form a photoresist layer or an organic insulating layer, the exposure energy varies depending on the region, and as a result, the thickness of the residual layer is uneven, making it difficult to achieve a residual layer having a uniform thickness. The thickness difference formed as described above can cause defects in undesired portions in subsequent processes, such as etching, plasma cleaning, or the like, thus causing defects. Therefore, the defective area of the transmission reflection portion needs to be repaired. 201239340 In the related art, in order to make the defect region in the transmission reflection portion and the adjacent non-defective region have the same degree of transmittance, a method is adopted which removes the defect region in the transmission reflection portion and utilizes an electron beam The technique deposits a fine binary pattern on the transmission reflection portion to take advantage of the diffraction phenomenon of the fine pattern without the need for a laser. The use of existing laser deposition and corrections to repair defects in the area via laser deposition is a technique for performing a 1% transmittance or zero shielding of the object to be repaired. Therefore, people's interest in the program focused on the quality and size of the deposited film and the modified area. However, due to the increased size of the reticle and the electron beam technology requires the use of a true cavity, it is not possible to apply this technique to the program and to perform halftone repair using existing laser repair methods. In particular, the transmittance is measured after repairing the defective region via laser deposition so that the transmittance of the repaired region coincides with the transmittance of the other regions. Under this circumstance, since the equipment for the penetration rate measurement operates independently, it is difficult to perform the continuity procedure, and it is necessary to accommodate the space and equipment investment of the equipment, thereby increasing the cost and greatly increasing the program time. Fig. 1 illustrates a related art measuring device 1G which measures the transmittance or reflectance of a wafer or a metal sample by a wavelength range. As for the related measuring device 10, the operation is as follows: the sample to be tested 20 is placed on the measuring platform, and the light source supplies light to penetrate the sample. The light is induced by the light receiving element and then becomes a complex spectral component by the spectrometer 30, and then the computer 40 calculates the degree of transmittance. However, in the independent transmittance measuring apparatus according to the related art, the size of the area measured in 201239340 is directly related to the size of the light receiving element. In the case where the device measures the transmittance of a fine area of 7 to ι φ, a separate optical system is required, which is one of the factors that increase the overall manufacturing cost. The other methods are as follows. By comparing the data on the transmittance measured by the above method and the image of the region measuring the transmittance. Ten count penetration rate. However, this method does not ensure the reliability of the measured values. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to effectively provide an instant penetration measurement system that can accurately measure the penetration rate during the repair of the reticle using the laser repair system to enhance the repair procedure. Reliability and reproducibility, and maximize cost reduction. Accordingly, another object of the present invention is to effectively provide a transmittance measurement system that allows the use of an optical system of an existing repair system without the need for additional separate optical systems to eliminate the use of existing transmittance measurement equipment. Non-economical aspects resulting from independent installations, such as increased expenditures, operational delays, separate equipment occupancy, and the like, are widely applicable to measurement equipment with a variety of optical systems. According to one aspect of the present invention, an instant transmittance measurement system includes: an upper optical system on a platform for placing a test object on the platform, the upper optical system being disposed along a light path And a lower optical system located below the platform, the lower optical system allowing 201239340 to pass through the platform through transmitted light, wherein the instant transmittance measuring system further includes a transmittance measuring unit received by the upper portion Optical information provided by the optical system and the lower optical system to measure transmittance. The upper optical system may include: a first objective lens and a first tube lens on the platform. The first objective lens and the first tube lens are disposed along the optical path, and the first objective lens and the first objective lens One of the first tube lenses reflects an illumination portion that provides reflected illumination. The lower optical system can further include: a transmissive illumination portion under the platform, the transmissive illumination portion projecting transmitted light to the platform; and a second objective lens and a spacing along the optical path of the transmitted illumination The second tube lens. The transmitted illumination of the transmitted illumination portion and the reflected illumination of the reflected illumination portion can have different wavelengths. The lower optical system may further include a light shape control portion (slit or mask) between the transmitted illumination portion and the second tube lens, the light shape control portion for reducing the size of the transmitted light . The transmitted illumination portion can have a structure that allows the transmitted illumination to be moved for control over the magnitude of the transmitted illumination, and the second objective lens can include a moving portion 'allowing a position to be controlled thereon in a vertical direction. The transmittance measuring unit can include at least one spectrometer that receives the transmitted illumination from the lower optical system and separates the received illumination into a plurality of spectral components. The transmittance measuring unit may be disposed at a first position between the platform and the first objective lens, or the transmittance measuring unit may be disposed at a second position to receive the second tube lens Through the 201239340 light. The transmittance measuring unit may include: a collimating lens that receives the transmitted light, and a filter spaced apart from the collimating lens; and a light receiving element that finally receives the transmitted light and The received light is transmitted to a spectrometer. According to another aspect of the present invention, an immediate transmittance measurement system is provided comprising: an upper optical system located above a platform on which a test object is placed, the upper optical system being along a light path configuration; and a light transmissive portion disposed under the platform, wherein the immediate transmittance measurement system further includes a transmittance measuring unit that receives and is incident on the upper optical system The optical information from the illumination of the grating, or the optical information from the transmitted illumination portion of the transmitted illumination, to measure the transmittance. The upper optical system may include: a third objective lens and a third tube lens on the platform; the third objective lens and the third tube lens are disposed along the optical path; the third objective lens and the first One of the three tube lenses reflects the illumination portion 'the reflected illumination portion projects the reflected illumination; and a portion of the raster illumination above the third tube lens that projects the raster illumination. The raster illumination portion can include a light shape control portion that controls the size of one of the light to determine the size of one of the measured portions. The transmittance measuring unit can include at least one spectrometer that receives light from the illuminated portion of the grating or the portion of the reflected illumination and separates the received light into a plurality of spectral components. 201239340 The transmittance measuring unit is configured to be disposed at a second position between the platform and the transmitted illumination portion, and separate the light from the grating illumination through the object to be separated into a plurality of spectral components. The transmittance measuring unit is configurable in a fourth position to receive the transmitted illumination through the third tube lens. The transmittance measuring unit may include: a collimating lens that receives the transmitted light and a filter spaced apart from the collimating lens; and a light receiving element that ultimately receives the transmitted light and transmits the The received light is directed to the spectrometer. The raster illumination and the transmitted illumination can have different wavelengths. The instant transmittance measurement system having the above structure according to the aspect of the present invention can be used as an independent transmittance measurement device, and is widely applied to various devices requiring transmittance measurement, and in particular, can be used with Laser Repair - A combination of cropping areas in one of the halftone masks to instantly measure the penetration of the repaired area, or as an integrated system, measuring the penetration separately after the repair procedure. [Embodiment] Hereinafter, the configuration and operation of an embodiment according to the present invention will be described as the accompanying drawings. For example, referring to Fig. 2 and the transmittance of the country of the flute, according to the present invention, the fourth embodiment is shown in Fig. 2, and the concept of the configuration of the system is shown. In the 3rd round 201239340, the laser hair indicated by the dotted square is not the following example: according to the embodiment, the system is used for the mask a* « . 4. ^ a laser deposition repairing device for a cover. In a separate system according to an embodiment, a laser emission list of a discreet circle + "a thumbnail is not according to the embodiment, and an immediate reading ^^ The upper optical system 200 is disposed above the twentieth 100 along the optical path, and the object to be tested is placed on the platform, and the lower optical system 300 is disposed along the optical path just below the platform. And allow the transmitted light to pass up through the platform (10). In addition, the 'immediate transmittance measurement system also includes a transmittance measuring unit 400, which is disposed at at least one of the upper optical system 2 (9) or the lower optical system 300, and is received by the upper optical system. The optical information of the transmission or transmission of the lower optical system 300 is measured to measure its transmittance. According to this embodiment, a test object is placed on the platform 1〇〇. When measuring the object, a reticle or halftone mask can be configured to measure: transmittance or reflectivity. Obviously, different types of objects can be configured to measure their transmittance. The upper optical system 200 is configured as a system to ensure and observe the incident optical path in the instant measurement system according to the present embodiment. In more detail, the upper optical system 200 may include a first objective lens 21, which is spaced apart from the platform 100 in the upward direction 'and a first tube lens 22'', which is opposite to the first objective lens 20 Separate intervals. Additionally, the upper optical system 200 may further include a reflected illumination portion 203 disposed between the first objective lens 210 and the first tube lens 220 and providing reflected illumination, and a laser autofocus 240. The charge coupled device (CCD) portion 201239340 250 is used to verify the transmittance, repair state, or provide reflectivity. The lower optical system 3〇〇 may include a transmissive illumination portion (10) that provides transmissive illumination from a platform under which the object to be tested is placed, and includes a second path of transmitted light along the transmitted illumination portion 310 that is spaced apart by a second path. The objective lens 330 and the second tube lens. The lower optical system 300 can further include a light shape control portion 340 positioned between the transmitted illumination portion 31 and the second tube lens 32A to reduce the amount of transmitted illumination. The light shape control portion 3 4 〇 may include a grating or a mask. In order to reduce the size of the transmitted illumination, the transmitted illumination portion 3丨〇 can control its illumination to the left or to the right' while the light-shaped control portion 3 4 can also be controlled by the transmitted illumination portion 3 1 by using a grating or a mask The size of the light that is projected. According to this embodiment, the transmittance measurement system can include one or more transmittance measurement units 400. That is, the transmittance measuring unit 4 can be disposed between the platform 100 and the first objective lens 210 (that is, at the first position), or disposed on the first tube lens 220 to receive the passed through The first tube lens 220 is transmitted through light. Of course, the transmittance measuring unit 4 can be disposed at the first position and the second position, respectively. The s-hai transmittance measuring unit 400 may basically include a collimating lens 41 〇, a filter 420, and a light receiving element 430 that is received by the transmitted illumination portion 3 下部 of the lower optical system 300 Upon illumination, the light receiving element 430 transmits the received transmitted illumination to the spectrometer 440. In this case, the filter 420 can use the cut-off filter to filter the incidence of wavelengths that may be generated when 10 201239340 uses different wavelengths of illumination. The above configuration can be applied to the transmittance measuring unit 400 disposed at the first position or the second position. The illumination entering spectrometer 440 is separated into complex spectral components' followed by spectral analysis to obtain the degree of transmission. Further, as shown in the figure, a plurality of spectroscopes (not shown) are present in the upper and lower optical systems 2 and 3 to maintain the optical path. The operation of this embodiment will now be briefly described by measuring the procedure of the transmittance of a halftone mask after the laser deposition repair procedure. In this case, a laser as depicted in Fig. 3 is formed on the upper optical system 200. The object to be tested is placed on the platform 100, and the transparent illumination portion 3 10 ' of the lower optical system 3 is irradiated by the second tube lens 32 and the second objective lens 330. The transmittance measuring unit 400 at the first position then receives the light transmitted from the lower optical system 3' and measures the transmittance. Of course, when the transmittance measuring unit 4 is located at the second position, the transmittance can be measured at the second position. In addition, when a repair program is executed on the defective area of the halftone mask, the progress and the transmittance of the program can be measured in real time, and the reflected illumination provided by the reflected illumination portion 230 can also be transmitted through the CCD portion. 250 ' to observe the progress status of the platform 1 。. In addition, the transmittance can also be measured by transmitted light from the lower optical system 300 at the same time. In this case, epi-iUumination and transmissive illumination can be configured differently to enhance the accuracy of the measurement. Of course, when the transmittance is not directly measured, the program processing state can be observed even by the transmitted light 201239340. For the procedure other than the transmittance measurement (that is, the repair process of the defect area in the reticle, the package 3 rich-tone mask) is in progress, the root: the instantaneous transmittance of the μ column; Then the system measures the transmittance and .... fruit. In addition, the 'immediate transmittance measurement system can be used as a stand-alone program to perform only transmittance measurements. Hereinafter, another embodiment of the present invention will be described with reference to FIGS. 4 and 5, and FIG. 4 is a block diagram showing a configuration according to another embodiment of the present invention and FIG. 5 is a fourth diagram. A conceptual view of an embodiment. The basic configuration of the optical system 200 and the platform 100 is the same as that of the previous embodiment of the third embodiment, and the same components are denoted by the same component symbols. In Fig. 5, a laser emitting unit indicated by a broken line block illustrates the case where the system according to the present embodiment is attached to a laser deposition repairing apparatus t of a photomask (including a halftone first cover). In the independent measurement system according to an embodiment of the present invention, the illustrated laser emission unit A can be omitted. In the present embodiment, the lower optical system 'in the previous embodiment is not present' and the upper optical system contains a grating illumination portion. In this system, the transmittance can be measured by analyzing the grating illumination through the side to side on the lower side of the platform 100. In more detail, the instant transmittance measurement system according to the present embodiment includes the upper optical system 200 and the transmitted illumination portion 3〇〇' disposed under the platform 1 without the lower optical system of the previous embodiment. The upper optical system 200 includes a third objective lens 210 and a third tube lens 220 that are disposed above the platform 100 along the optical path. The upper optical system 2 includes a reflective illumination 12 201239340 portion 230 and a grating illumination portion 260. The reflected illumination portion 230 is disposed between the third objective lens 2 and the third tube lens 22, and the grating illumination portion 260 is located at the third The tube lens 220 is over and projected through the grating illumination. The light shape control portion 270 is spaced apart from the raster illumination portion 260 and controls the size of the light to determine the size of the portion to be measured. Further, the transmitted illumination portion 3〇〇 is disposed under the stage 1〇〇, and the transmitted light from the transmitted illumination portion 300 is incident on the stage 1〇〇 and passes through a portion of the transmittance to be tested. In addition, the reflected illumination portion 230 and the laser autofocus 240 may be located between the second tube lens 220 and the third objective lens 210. Further, according to the present embodiment, the transmittance measuring unit 4 can be disposed under the platform 100 (that is, at the third position), so that the light from the grating illumination portion 260 can pass down through the platform 1〇〇. And received by the light receiving element 430 and then separated into complex spectral components. Alternatively, the transmittance measuring unit 400 may be disposed on the third tube lens 22A (ie, at the fourth position) or the two transmittance measuring units 4〇〇 may be respectively disposed in the third position and The fourth position. The operation mechanism of the instant transmittance measurement system according to the embodiment of Fig. 4 is as follows. First, the light from the raster illumination portion 260 is controlled by the light shape control portion 270. Then, the controlled light passes through the third object lens 22 and the third objective lens 210 through the object to be tested, and then passes down through the stage 1〇〇. Therefore, the illumination only radiates a corresponding area of one of the objects to be measured, and is then received. The light received by the grating according to the above manner is incident on the transmittance measuring unit 400, which is disposed at the third position. In the transmittance measuring unit 400, the light irradiated by the grating is transmitted from the light receiving element 430 to the spectrometer 440 via the collimator lens 41 and the filter 420', and thus is separated into a complex spectral component therein. This information is analyzed by a control unit computer, thus achieving a degree of penetration. Of course, when the transmittance measuring unit 400 is disposed in the fourth position, the transmitted illumination from the transmitted illumination portion 300 below the platform 100 reaches the fourth via the platform 100' third objective lens 210 and the third tube lens 220. The position 'or reflected light from the reflected illumination portion 230 is received, so the transmittance measurement unit 4 located at the fourth position can measure the reflectance and the transmittance. Even in this case, the 'transmitted illumination portion 3 1 〇, the reflected illumination portion 230, and the raster illumination portion 260 can be configured to produce light of different wavelengths. According to this embodiment, the instant transmittance measurement system can be applied to equipment for measuring the transmittance of a photomask, a halftone mask or the like, or an apparatus for measuring the thickness of a film, and various equipments for measuring reflectance. Equipment. The following will describe the application example of the instant transmittance measurement system according to this embodiment. In this application example, the instant transmittance measurement system is applied to an apparatus that can perform laser deposition on a defective area in a halftone mask or an apparatus that can instantaneously measure the transmittance of a repair area. The first diagram is a schematic illustration of an apparatus that uses laser ion deposition to repair a defect region, wherein the defects are present in a halftone region of the halftone mask in the chamber. In other words, the transmittance measurement system ~T configuration according to this embodiment is combined with equipment using a laser deposition using a laser to repair a defective region of the light 24 14393940 (or a halftone mask), and thus can be used and repaired. The program measures the degree of penetration in the defect area of the target reticle (or halftone reticle) synchronously or separately. In other words, the gas reaction chamber 600 is located above the platform 1〇〇, and the raw materials enter the gas reaction chamber via the feed lines a, b, and c to provide deposition materials introduced from the outside, and the supplied raw materials are deposited by laser. (R) In this case, the optical system 5 on the gas reaction chamber 6A provides laser light for illumination, so the program can be observed. Referring to Figure 7, the optical system 5 will now be described in more detail. The configuration of the optical system 500 is configured to perform a repair procedure using a laser. Basically, the laser performs a deposition process on the object to be repaired in the chamber e, and the CCD camera 530 is configured to observe the The plurality of beamsplitters S are arranged under the laser beam portion of the laser beam, along the laser light path, and may have a laser light shape control portion (ie, a grating mask) and a tube lens 54. , an objective lens 55, a chamber C with an optical window, a substrate 560, an autofocus, and a CCD camera 530. When the lower optical system according to this embodiment is formed according to the above = basic configuration, the transmitted light from the platform (10) to The upper pass: port 10G' and thus the transmittance can be measured instantaneously by the transmittance measuring unit 400 according to the embodiment described above. Of course, the transmittance measuring unit 400 can be configured in the first The position or the second position. In addition, the instant transmittance measurement system according to the embodiment can be used not only for the halftone repair equipment but also for other equipment requiring transmittance measurement, and can also measure the wearing of the film. Transmittance, reflectivity, and thick production. Further 2012 20124040 The instant transmittance measurement system according to this embodiment can also be applied to perform measurement in a fine area of 0.5 μm or less to move between regions to be tested. It is easier and provides accuracy in measurement. As described above, according to this embodiment of the present invention, the instant transmittance spectrometry system is provided, which is reliable during the reticle repair procedure using the laser repair system Instantly measure penetration to enhance the reliability and reproducibility of the repair process while greatly reducing program time and maximizing cost reduction effects. In particular, the optical system of the repair system can be used without An additional configuration of the optical system to eliminate uneconomical aspects resulting from the independent installation of existing transmissivity measurement equipment, such as increased expenditures, operational delays, separate equipment occupancy, and the like. In addition, the Instant Transmittance Measurement System It can be widely used in measuring equipment with various optical systems, and can measure the transmittance, reflectivity and thickness of the film. It can also perform measurement in a fine area of 0.5 μm or less to move between the areas to be tested. It is easier and provides accuracy in measurement. In addition, in the case of existing mass production systems, since the transmittance measurement equipment & is separate from the reticle repair equipment, the repaired object f is transferred to Transmittance measurement equipment to measure the degree of penetration of the repaired position. However, according to the present invention, the instant transmittance measurement system instantaneously measures the transmittance while excluding the equipment transfer time and because during the transfer process Particles are produced and increased, resulting in reduced yield. Since the 0 wax is directly redeposited after repairing the defect area, the rust-toothed sheep can be made to have a diameter in comparison with the initially formed film by sputtering. Therefore, it is possible to ensure sufficient reliability and reproducibility of the quality of 201239340. The existing transmittance measuring equipment is not used for mass production, and the production yield can be improved. It will be apparent to those skilled in the art that the present invention may be modified and modified by those skilled in the art without departing from the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects and features of the present invention will become apparent from the Detailed Description of the Detailed Description of the Drawings. A view of one of the configurations of the permeability measurement; FIG. 2 is a block diagram of a transmittance measurement system according to an embodiment of the present invention; and FIG. 3 is a diagram showing the transmittance depicted in FIG. A conceptual view of a measurement system configuration; FIG. 4 is a block diagram of a transmittance measurement system according to another embodiment of the present invention; and FIG. 5 is a conceptual view of a transmittance measurement system depicted in FIG. And FIGS. 6 and 7 are views showing an application example of a transmittance measuring system according to an embodiment of the present invention. 17 201239340 [Explanation of main component symbols] 10 Related technology measurement installation 20 Sample to be tested 30 Spectrometer 40 Computer 100 Platform 200 Upper optical system 210 First objective lens 220 First tube lens 230 Reflected illumination part 240 Laser autofocus 250 Charge Coupling element portion 260 grating illumination portion 270 light shape control portion 300 lower optical system 310 transmission illumination portion 320 second tube lens 330 second objective lens 340 light shape control portion 400 transmittance measurement unit 410 collimation lens 420 filter 430 light Receiving Element 440 Spectrometer 500 Optical System 510 Laser Light Control Section 520 Auto Focus 530 CCD Camera 540 Tube Lens 550 Objective 560 Substrate 600 Gas Reaction Chamber C Chamber R Deposition 18