201233475 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種用於雷射加工之雷射加工裝置；更詳 細而言，其係藉由對包含形成正面之第丨層、及存在於第工 層之背面側之第2層而成之被加工物，自表面侧照射雷射 光束來加工被加工物者。 【先前技術】 藉由對包含形成正面之第1層、及存在於第i層之背面側 之第2層而成之被加工物，自正面側照射雷射光束來加工 被加工物之.雷射加工裝置已為公眾所知（例如，專利文獻1 等）。 專利文獻1中’揭示有切斷（加工）被加工物之雷射加工 裝置’該被加工物係「例如，包含銅及/或環氧材料之第1 層（42，圖2)、及包含成形化合物之第2層（44)」（專利文獻 1之發明之詳細說明中，段落序號〇〇13之最後部分）。 詳細而言，專利文獻1之發明之詳細說明中，段落序號 0014〜〇〇15係揭示有下面引用之雷射加工裝置。 「圖3顯示本發明之一實施形態之切斷區域。第1雷射光 束（10)及第2雷射光束（2〇)，係以照射由χ_γ載物台（3〇)所 支樓之1C封裝體（4〇)之相同水平面之方式而配置。於該特 定之實現形態中，第1雷射光束（1〇)係藉由具有最大5〇 kHz 之脈衝重複率之532 nm之50 W Nd : YAG雷射源而生成； 第2雷射光束（2〇)係藉由脈衝持續時間7 ns之1〇64 nm之 Nd : YAG雷射而生成。IC封裝體（40)係固定於X-Y載物台 159366.doc -4· 201233475 (30)，且包含：包含銅及/或環氧材料之第1層（42)、及包 含成形化合物之第2層（44)。在第1步驟中，第1雷射光束 Π〇)係集束於位於基板上之第1層（42)上之第1雷射焦點。 雷射光束（20)係放射於雷射光束（1〇)之附近，並集束於基 板上之第2雷射焦點《該第2焦點係自第1焦點偏位向與基 板之動作方向相反之方向，並位置於第2層（44)上。χ-γ載 物台係擔持在特定之速度下沿特定之徑跡（圖中從左至右） 移動之1C封裝體（40)。第1雷射光束（10)係沿徑跡掃描第1 層（42) ’並貫通第丨層（42)之厚度全體而形成第1切溝 (142)。第2雷射光束（20)係於橫向偏位向第1雷射光束之下 游側’且沿徑跡掃描（於該時刻露出著之）第2層（44)，並貫 通第2層（44)之厚度全體而形成第2切溝〇44)。因此，1(：封 裝體係藉由2個切溝（142、144)而分離。」 (引用結束）此處，專利文獻丨之全體之揭示，係藉由參 照而併入本說明書中。 又’本專利申請人暨發明者之一部分，係就關於在被加 工物之正面上照射雷射光束而加工該正面之雷射加工中， 用於噴射噴在該被加工之正面之輔助氣體之喷射噴嘴之發 明’提出了專利申請（專利文獻2)。 專利文獻2中揭示有（專利文獻2之發明之詳細說明中， 段落序號0009)「一種喷射喷嘴，其係於將雷射光束照射 在被加工物之正面上加工該正面之雷射加工中，用於喷射 喷在該被加工之正面上之輔助氣體之喷射喷嘴；且其係具 備.收縮部，其係該輔助氣體所通過之形成於該喷射喷嘴 159366.doc 201233475 之内部之流路，隨著行向下游而截面積減少；擴張部，其 係接收通過該收縮部之該輔助氣體，隨著行向下游而截面 積增加，並於頂端部喷射該輔助氣體」（又，專利文獻2之 專利申請，以日本特許第3789899號取得專利。）。此處， 專利文獻2之全體之揭示，係藉由參照而併入本說明書 中。 先前技術文獻 專利文獻 [專利文獻1]曰本特開2003-3 721 8號公報（例如，摘要、 發明之詳細說明中之段落序號〇〇丨3〜〇〇丨5、第2圖及第3圖 等） [專利文獻2]日本特開2004-283845號公報（例如，摘要及 發明之詳細說明中之段落序號〇〇〇1〜〇〇u、第1圖及第Μ圖 〜第15圖等） 【發明内容】 發明所欲解決之問題 根據專利文獻1所揭示之雷射加工裝置，「第1雷射光束 (1〇)係沿徑跡掃描第丨層㈠勾，並貫通第丨層㈠”之厚度全體 而形成第1切溝（142)°第2雷射光束（20)係於橫向偏位向第 射光束之下游側，且沿徑跡掃描（於該時刻露出著之）第 2層（44)，並貫通第2層（44)之厚度全體而形成第2切溝 (144)。因此，IC封裝體係藉由2個切溝、μ句而分 離」（專利文獻1之發明之詳細說明中，段落序號0015); 因此，為與第1雷射光束（1〇)之軌跡（徑跡）一致，有必要於 I59366.doc 201233475 下游側使第2雷射光束⑽掃描，而在為了使第丄雷射光束 (10)與第2雷射光束（2G)之任―者皆沿特定之徑跡掃描上， 有切斷軌跡（徑跡）形狀之自由度下降之問題（例如，無法自 由選擇作為切斷軌跡（徑跡）之各種曲線）。 因此，本發明係以提供一種雷射加工裝置為目的其係 藉由對包含形成正面之第丨層、及存在於第丨層之背面側之 第2層而成之被加工物，自正面側照射雷射光束來加工被 加工物者；且加工被加工物之軌跡（徑跡）之形狀並無限 制’可自由選擇作為軌跡（徑跡）之各種曲線。 解決問題之技術手段 本發明之雷射加工裝置（以下稱作「本裝置」）係藉由對 包含形成正面之第1層、及存在於第〗層之背面側之第2層 之被加工物，自正面側照射雷射光束來加工被加工物者； 且其係具備照射雷射光束之照射機構、及使被加工物沿被 加工物之正面相對於照射機構相對移動之移動機構而成； 照射機構係具有：第2照射機構，其係於第1層之正面之第 2區域，照射適合第2層之加工之第2雷射光束；及第丨照射 機構，其係於包圍第2區域之第1區域，照射適合第丨層之 加工之第1雷射光束。 本裝置係藉由對包含形成正面之第1層、及存在於第1層 之背面側之第2層而成之被加工物，自正面側照射雷射光 束來加工被加工物之雷射加工裝置。被加工物係具有正 面’從該正面側照射雷射光束。被加工物係包含第1層、 及存在於第1層之背面側之第2層；且第1層之正面形成被 159366.doc 201233475 加工物之該正面（照射雷射光束之側之面），於第^之背面 (與構成被加工物之該正面之第i層之正面相反之面)側存在 第2層。X ’所謂加工，係指藉由照射雷射光束讓被加工 物融解或分解等，以致被加工物之形狀產生變化者。 本裝置大略而言，係具備照射機構、及移動機構。 照射機構係從被加工物之正面側照射雷射光束。 移動機構係使被加工物沿被加工物之正面相對於照射機 構相對移動。此處所謂「使被加工物相對於照射機構相對 移動」，係只要相對於照射機構被加工物相對移動即足 夠，以絕對位置而言，可為以下3種情形之任一者：照射 機構及被加工物中，僅照射機構移動而被加工物靜止之情 形，照射機構及被加工物中，僅被加工物移動而照射機構 靜止之情形；以及照射機構及被加工物兩者皆移動之情 形》 又，本發明中，照射機構係具有第2照射機構與第1照射 機構。 第2照射機構，係於第丨層之正面之第2區域，照射適合 第2層之加工之第2雷射光束。 第1照射機構，係於包圍第2區域之第i層之第i區域，照 射適合第1層之加工之第1雷射光束。 即’於第2區域照射適合第2層之加工之第2雷射光束， 且於包圍第2區域之第1區域，照射適合第丨層之加工之第1 雷射光束’故於包圍第2雷射光束照射之第2區域之第1區 域中，藉由第1雷射光束之照射，第1層被融解或分解（以 159366.doc 201233475 下稱作「融解等」）除去而露出第2層β 因此，於第2區域照射第2雷射光束，且於包圍第2區域 之第1區域照射第1射光束之狀態，若移動機構使被加工 物沿被加卫物之正面相對於照射機構相對移動，則於利用 第丄雷射光束之照射除去^層而露出之第2層，照射第2雷 射光束’第2層會被融解等而除去。 因第1區域係包圍第2區域，故從第2區域觀察，沿著被 力:工物之正面之任何方向，都存在第i區域，因此，不論 沿著被加工物之正面之任何方向相對於照射機構相對移動 被加工物，於照射第2雷射光束之第2區域中皆會露出第2 層，藉此於第2層照射第2雷射光束，實現利用本裝置之加 工。 如乂上所述，本裝置中，第丨區域係包圍照射適合第2層 之加，之第2雷射光束之第2區域，藉由在第1區域照射第1 雷射光束，而不論沿被加工物之正面之任何方向相對於照 射機構相對移動被加工物，於照射第2雷射光束之第2區域 中皆會露出第2層’藉此於第2層上照射第2雷射光束，且 藉由使第2雷射光束沿加工被加工物之執跡（控跡）掃描讓 加工被加工物之軌跡（徑跡）之形狀並無限制，可自由選擇 作為執跡（徑跡）之各種曲線，自由進行加工。 、 ^本裝置中，第丨區域中存在於第2區域之外側之單獨第1 區域之寬度ϋ為沿被加工物《正面之任何方向均大略 相等者（以下稱作「均等寬本裝置」。）。 本裝置中，因從第2區域觀察沿被加工物之正面之任何 159366.doc 201233475 方向皆存在第1區域，故不論沿被加工物之正面之任何方 向對於照射機構相對移動被加工物，於第2雷射光束所照 射之第2區域中第2層皆會露出，藉此可實現於第2層照射 第2雷射光束之利用本裝置之加工。因此，藉由使第1區域 中存在於第2區域之外側之單獨第丨區域之寬度成為沿被加 工物之正面之任何方向均大致相等者，以致與沿著被加工 物對於照射機構相對移動之被加工物之正面之方向無關， 同樣地利用第1雷射光束除去第i層，故可不考慮被加工物 對於照射機構之相對移動方向，確實地實施從第1層至第2 層之加工（因不考慮移動方向，故加工被加工物之軌跡（徑 跡）之形狀之自由度高，也可自由實施曲線加工。）。 另外’所謂第1區域中存在於第2區域之外侧之單獨第1 區域之寬度，係指以第2區域之重心位置為端點之半直線 (自該重心位置以放射狀延伸之線）通過單獨第丨區域之距 離；所謂單獨第1區域之寬度沿被加工物之正面之任何方 向均大致相等，係指與如此之任一半直線相關之該距離亦 為大致相等之意。 均等寬本裝置之情形’亦可為第1區域之外緣線及第2區 域之外緣線，形成為以存在於第丨層之正面之相同點為中 心之同心圓’且於兩外緣線之間之全域上照射第1雷射光 束者。 如此，藉由使第1區域之外緣線及第2區域之外緣線形成 為以相同點為中心之同心圓，在兩外緣線（第丨區域之外緣 線與第2區域之外緣線）之間之全域照射第1雷射光束，而 159366.doc 201233475 可不考慮被加工物對於照射機構之相對移動方向，可確實 地使第1雷射光束所照射之寬（同心圓彼此之半徑差相同）她 是為相同者’且不論利用第！雷射光束之第！層之除去為任 何之相對移動方向，皆可同樣地進行，故可更加確實地實 施從第1層至第2層之加工（因不考慮移動方向，故加工被 加工物之軌跡(徑跡)之形狀之自由度高，也可自由地實施 曲線加工。）。 本裝置中，第1區域亦可為與第2區域之至少一部分重疊 者。 且 因照射第1雷射光束之第!區域與照射第2雷射光束之第2 區域之至少一部分(第2區域之一部分或全部)重疊，而於照 射第2雷射光束之第2區域之至少一部分(第2區域之一部分 或全部）上，照射第！雷射光束（又，因帛1區域包圍第⑽ 域，故與第2區域之至少一部分（第2區域之一部分或全部） 重疊之第1區域係第！區域之一部分。）。如此藉由於第2 區域之至少-部分(第2區域之一部分或全部)上照射㈣ 射先束，讓即使照射第2雷射光束之第2區域内殘留有曾形 成第1層之物質（例如，利用第巧射光束之第i層之除去為 不完全之情形’或附著有因利用第1雷射光束除去糾層而 產生之銲減物等不要物之情形等），亦有利用照射於第2區 域之至少-部分（第2區域之一部分或全部）上之第！雷射光 束可除去如s亥等之殘留物之情形’故可確實實施第2層之 (又確實除去存在於第2區域内之曾形成第i層之殘 留物者’以向第2區域之全部照射第1雷射光束之方式進行 159366.doc -11 - 201233475 本裝置中’進而具備用於噴射喷在被加工物上之輔助氣 體之喷射喷嘴；且第1雷射光束及第2雷射光束’亦可為通 過喷射喷嘴之辅助氣體喷射口而照射於被加工物者。 如上述專利文獻2所述，在被加工物之正面照射雷射光 束來加工該正面之雷射加工中，因藉由雷射光束之照射讓 被加工物被融解等，故為除去如該等之被加工物之融解物 且有效地實施加工，配設用於在被加工物上喷射輔助氣體 之喷射喷嘴之情形很多。該喷射喷嘴，係設有用於在被加 工物上喷射辅助氣體之輔助氣體喷射口但亦可使第丄雷 射光束及第2雷射光束從如此之輔助氣體喷射口向被加工 物照射，如此一來，與於輔助氣體之喷射喷嘴之外，另行 確保第1雷射光束及第2雷射光束之光路之情形相&，可使 裝置小型化《並且，可藉由自丨之輔助氣體喷射口喷射之 輔助氣體，同時有效率地吹飛除去因第}雷射光束及第2雷 射光束之加工而產生之物質（排氣及渣等）。 本裝置中，照射機構亦可為可一邊照射第丨雷射光束及 第2雷射光束，一邊變更相對於第2區域之第丨區域之相對 位置者。 本裝置中，利用照射於第丨區域之第丨雷射光束除去第1 層，藉此於照射第2雷射光束之第2區域中露出第2層，而 第2雷射光束照射第2層實現利用本裝置之加工。如此的本 裝置中，重要的是於被加工物到達照射第2雷射光束之第2 區域之前，順利地除去第1層，因此，亦可調整被加工物 159366.doc -12- 201233475 到達第2區域之前之第1雷射光束之照射時間，或調節第i 雷射光束之輸出。且，被加工物到達第2區域之前之第1雷 射光束之照射時間，具體而言，係調節移動機構使被加工 物相對於照射機構沿被加卫物之正面相對移動之移動速度 等方式；亦可一邊照射第1雷射光束及第2雷射光束，一邊 變更相對於第2區域之第丨區域之相對位置。例如，第i區 域中存在於第2區域之外側之單獨第丨區域之寬度中，若使 被加工物到達第2區域之前之第丨雷射光束之照射部分之寬 度增加，即可使該照射時間增加；若使該寬度減少，則可 使該照射時間減少》 本裝置中，照射機構係具有通過開口，其係使第i雷射 光束及第2雷射光束之中沿特定之光路之任一方之光束通 過；且具有反射鏡者（以下稱作「反射鏡本裝置」，其係 沿該光路之方式反射從與該光路相異之方向入射之任一另 一方之光束。 藉由使用如此之反射鏡’使第1雷射光束及第2雷射光束 之中沿特定光路之任一方之光束通過具有反射鏡之通過開 口’且利用反射鏡之反射面（亦可為以甜甜圈狀形成於通 過開口之周圍之凹面）’以沿該特定光路之方式反射第j雷 射光束及第2雷射光束之中從與該特定光路相異之方向入 射之任一另一方之光束’因而可沿該特定光路順利地照射 沿該特定光路之一方之光束、及從與該特定光路相異之方 向入射之另一方之光束。藉此’可沿同一之光路，在被加 工物上順利地照射波長相異之從相異發射源所產生之第1 159366.doc -13· 201233475 雷射光束及第2雷射光束。 又，於通過通過開口之該一方之光束為第丨雷射光束之 情形中，利用反射鏡之反射面而反射之該另一方之光束為 第2雷射光束；相反地，於通過通過開口之該一方之光束 為第2雷射光光束之情形中’利用反射鏡之反射面而反射 之該另一方之光束為第1雷射光束β 反射鏡本裝置之情形中，第1雷射光束為上述另一方之 光束’且亦可為藉由使反射鏡之反射面相對於上述光路移 位’而可一邊照射第1雷射光束及第2雷射光束，一邊變更 相對於第2區域之第1區域之相對位置者。 藉此’將利用反射鏡之反射面而反射之上述另一方之光 束作為第一雷射光束，並將沿上述特定光路通過反射鏡之 通過開口之上述一方之光束作為第2雷射光束；藉由使反 射鏡之反射面相對於上述特定光路移位之簡單之構成，可 一邊照射第1雷射光束及第2雷射光束，一邊順利地變更相 對於第2區域（通過通過開口之第2雷射光束）之第1區域（利 用反射面反射之第1雷射光束）之相對位置。 反射鏡本裝置之情形，照射上述一方之光束之一方光束 產生機構’亦可為具有聚光透鏡者，該透鏡係使通過上述 通過開口以前之上述一方之光束折射；且相較於上述一方 之光束由該聚光透鏡所吸收之比率，上述另一方之光束由 該聚光透鏡所吸收之比率較大（以下稱作「透鏡吸收比率 差本裝置」）。 要在被加工物上照射雷射光束加工被加工物，通常需要 159366.doc •14· 201233475 在被加工物之正面附近聚光雷射光束。第1雷射光束與第2 雷射光束中，任一光束皆可利用反射鏡本裝置中之反射鏡 之反射面反射而聚光，但其以外之光束可利用聚光透鏡聚 光（比反射鏡位於其以外之光束之更上游側，該其以外之 光束，係於通過聚光透鏡後，通過反射鏡之通過開口）。 此時’於第1雷射光束與第2雷射光束之由聚光透鏡之吸收 率為相異之情形中，利用反射鏡之反射面以沿特定光路之 方式反射聚光易被聚光透鏡吸收之光束（以不讓易被聚光 透鏡吸收之光束通過聚光透鏡之方式進行），可減少因聚 光透鏡所造成之吸收損失》即，第1雷射光束與第2雷射光 束中，將易被聚光透鏡吸收之光束作為上述另一方之光束 (利用反射鏡之反射面反射並聚光），將難以被聚光透鏡吸 收之光束作為上述一方之光束（利用聚光透鏡聚光，通過 反射鏡之上述通過開口）之方式來實施即可。該情形中， 相較於上述一方之光束被該聚光透鏡所吸收之比率，上述 另一方之光束被該聚光透鏡吸收之比率較大；且照射上述 一方之光束之一方光束產生機構，係具有使通過上述通過 開口以前之上述一方之光束折射之聚光透鏡。 又’所謂「光束被聚光透鏡所吸收之比率」，係若將光 束入射至聚光透鏡之強度設為10,將光束透過聚光透鏡後 之強度（自聚光透鏡出射之強度）設為11，則該比率係表示 為（10-11)/10 。 透鏡吸收比率差本裝置之情形’亦可為藉由樹脂材料形 成第1層，第1雷射光束為上述另一方之光束者。 159366.doc -15- 201233475 第1層為樹脂材料之情形，第1雷射光束係使用適用於樹 脂材料層（第1層）之加工之雷射光束（被樹脂材料吸收發 熱）。因如此之適用於樹脂材料層之加工之雷射光束，通 常係易被聚光透鏡吸收者，故亦可為上述另一方之光束 (利用反射鏡之反射面反射聚光）。 透鏡吸收比率差本裝置之情形，係亦可為上述另一方之 光束不通過透鏡者。 於透鏡吸收比率差本裝置中，將易被透鏡吸收之光束設 為上述另一方之光束，利用反射鏡之反射面反射聚光。此 時’若僅以利用反射鏡之反射面反射上述另一方之光束來 聚光之方式實施’則可防止易被透鏡吸收之光束被透鏡吸 收而損失。 【實施方式】 以下’參照圖式說明本發明之實施形態。然而，本發明 非因此等而受任何之限制。 圖1係顯示本發明之一實施形態之雷射加工裝置（本裝 置）u的概念剖面圖；圖2係顯示本裝置η加工之LED封裝 體1 〇 1 (被加工物）的剖面圖。參照圖1及圖2對本裝置11進行 說明。 此處，被加工物即LED封裝體1〇1，係具有：平板狀之 陶瓷基板103;及石夕樹脂層105，其係以密接於陶竟基板 103之正面103a之方式而形成；陶瓷基板ι〇3之背面形成 LED封裝體101之背面l〇lb ’且矽樹脂層ι〇5之正面形成 LED封裝體101之正面101a。作為陶瓷基板ι〇3之材質，係 159366.doc • 16 - 201233475 列舉例如氧化鋁（Al2〇3)及氮化鋁（AIN)。 又，此處雖未圖示，但LED封裝體1〇1中，於陶瓷基板 103之正面103&上規則地配設有led晶片（發光二極體晶 片未圖示）。該各個之led晶片係利用矽樹脂層105而密 封（樹脂密封）。於圖〗及圖2，顯示不存在LED晶片之剖 面。本裝置11，係為了切斷並分離例如具有如LED封裝體 ιοί般之2層之複合機構而使用。又，藉由切斷圖2所示之 LED封裝體1〇丨，製造具有丨個或複數個之lED晶片之各個 。又，除圖2所示之矽樹脂層105之正面1〇la為平 坦之態樣以外，亦存在於矽樹脂層1〇5上形成有凸透鏡等 之態樣。 又，關於陶瓷基板103與矽樹脂層105之厚度，藉由今後 之LED元件之開發，可想到多樣之值。例如，認為陶瓷基 板103之厚度為〇·3〜〇 8 mm程度，矽樹脂層1〇5之厚度為數 mm以下’考量現實為1 mm以下者。 LED封裝體101，係於可沿正交3軸即χ軸、γ軸及z軸自 由移動之支撐載物台2G1(即包含如可動平台或移動載物台 等者）之上面，以背面10113密接之狀態並由支撐載物台 保持之方式，利用未圖示之夾具裝卸自由地安裝於支撐栽 物台2〇1上。又，圖丨中以箭頭表示χ軸及z軸，係相對 於圖1之面成為垂直方向。因此，藉由使支撐載物台如沿 X轴、Y軸及z軸移動，可自由地使LED封裝體ι〇ι移動。 本裝置11，大略而言，係具備：第1生機構31(可包含 雷射光束源）’其係照射適合切斷LED封裝冑101之石夕樹月3旨 159366.doc 201233475 層105之雷射光束，即樹脂切斷雷射光束L1(具體而言為 C〇2雷射光束）；第2產生機構51(可包含雷射光束源），其 係照射適合切斷LED封裝體101之陶瓷基板103之雷射光 束’即陶瓷切斷雷射光束L2(具體而言為光纖雷射光束）； 及觀察機構71 (可包含檢測器），其係觀察LED封裝體101之 加工（切斷）狀況。 第1產生機構31係具有：樹脂切斷雷射光束產生裝置 33 ’其係產生適合矽樹脂層1〇5之切斷之樹脂切斷雷射光 束L1 ;反射鏡35，其係反射樹脂切斷雷射光束產生裝置33 所產生之樹脂切斷雷射光束L1 ;及鏡驅動裝置37，其係驅 動反射鏡35。 樹脂切斷雷射光束產生裝置33所產生之樹脂切斷雷射光 束L1，具體而言，係具有9〜11 μηι程度之波長之C02雷射 光束。樹脂切斷雷射光束L1之點徑與能量，會隨著加工條 件或振盪之模式而變化很大。例如，認為點徑為20 μηι〜1 mm程度，能量為數百W程度。 此處’樹脂切斷雷射光束產生裝置33所產生之樹脂切斷 雷射光束L1 ’係沿X軸方向前進，利用反射鏡3 5反射到z 軸方向（面向LED封裝體101之方向）。又，樹脂切斷雷射光 束L1，係於矽樹脂層105之正面l〇la，或矽樹脂層105之内 部聚焦。此處’本申請書中所謂聚焦，係指於被加工物中 之欲加工點上，使樹脂切斷雷射光束！^及陶瓷切斷雷射光 束L2之點徑分別成為最小《又’藉由光學機構或支撐載物 台201之驅動’可適宜控制該焦點之z轴方向之位置。 159366.doc -18- 201233475 圖1中，轉動反射鏡35之方向、與樹脂切斷雷射光束Ll 及陶瓷切斷雷射光束L2之間之相對位置之關係，係如下所 述。圖1中，驅動鏡驅動裝置，轉動反射鏡35向成為可觀 察反射鏡35之反射面35s之狀態之方向（即，以面向近前側 之方式轉動反射鏡面該情形中，LED封裝體101之正面 l〇la中，樹脂切斷雷射光束L1之中心係相對於陶瓷切斷雷 射光束L2之中心向-Y方向移動。圖1中，驅動鏡驅動裝 置，轉動反射鏡35向成為可觀察相對於反射鏡35之反射面 35s之相反側之面之狀態之方向（即，以面向深處側之方式 轉動反射鏡面）。該情形中，LED封裝體101之正面l〇la 中，樹脂切斷雷射光束L1之中心係相對於陶瓷切斷雷射光 束L2之中心向+Y方向移動。 若自LED封裝體101側，沿Z轴方向觀察，反射鏡35係具 有看起來像第2圓形（第1圓形及第2圓形的中心大約一致）之 反射面35s(凹面），其中該第2圓形係形成有看起來像第1圓 形之開口 35h ;且開口 35h係使後述之陶瓷切斷雷射光束L2 於面向LED封裝體101之方向通過。 鏡驅動裝置3 7 ’係例如包含馬達而構成，且可自由驅動 反射鏡35。圖1中顯示有利用1軸驅動反射鏡35之例。但並 非局限於此，亦可利用複數之軸驅動反射鏡35。 第2產生機構51係具有：陶瓷切斷雷射光束產生裝置 53’其係產生適合陶瓷基板1〇3之切斷之陶瓷切斷雷射光 束L2(例如’光纖雷射光束）；光導電纜（光纖）54，其係引 導陶瓷切斷雷射光束產生裝置53所產生之陶瓷切斷雷射光 束L2;平行光管55，其係一邊調整光導電纜54所引導之陶 159366.doc 19 201233475 瓷切斷雷射光束L2之光軸，一邊平行放射；及聚光透鏡 57，其係以利用平行光管55而放射之陶瓷切斷雷射光束 L2，於LED封裝體1〇1之正面之i〇ia附近聚焦之方式折 射。此處，所謂光纖雷射，係指固體雷射的一種，係使用 光纖作為媒質之雷射之總稱。光纖雷射中，有CW振盪者 與脈衝振盪者。前者多使用於高輸出情形之切斷或溶接； 後者係多使用於低輸出情形之微細加工或標記。一般之光 維雷射’係將稀土類添加纖維作為增幅器使用，光路係全 部以光纖構成。例如，較佳可使用Yb光纖雷射、及Nd系 光纖雷射等。一般，稀土類添加纖維，於波長3 μηι以下之 多種波長内具有遷移線；作為Yb光纖雷射，可例舉可產生 波長約1 μιη之雷射光束者 又’利用平行光管55而平行放射之陶瓷切斷雷射光束 L2 ’係於到達聚光透鏡57之前，通過後述之第2分光鏡77 (使陶瓷切斷雷射光束L2通過）。 利用聚光透鏡57折射之陶瓷切斷雷射光束L2，係通過上 述之反射鏡35之開口 35h。並且，陶曼切斷雷射光束L2係 於陶瓷基板103之正面l〇3a，或於陶瓷基板1〇3之内部聚 焦。 作為陶瓷切斷雷射光束L2，除了光纖雷射光束之外，例 如可使用YAG雷射光束、及YV〇4雷射等。關於光纖雷射 光束’使用脈衝振堡即Q-SW振盪之情形中，認為點徑為 10〜100 μιη程度’能量為50 μ«τ〜1 J/Puise。又，關於光纖雷 射光束，可使用利用連續振盪之連續波。 159366.doc •20- 201233475 包含檢測器之觀察機構71係具有：CCD照相機72 ;成像 於CCD照相機72内之成像透鏡73 ;僅使適合照明之特定範 圍之波長之光穿透之帶通濾波器74;照亮LED封裝體101 之正面101a(視需要為包含矽樹脂層105之露出面、陶竞基 板103之正面103a及露出面等。以下相同。）之觀察用照明 器76 ;反射來自觀察用照明器76之照明光，且使向CCD照 相機72之成像光通過之第1分光鏡75 ;及反射可視光，且 使陶瓷切斷雷射光束L2通過之第2分光鏡77。 藉此’來自觀察用照明器76之照明光係利用第1分光鏡 75及第2分光鏡77反射，照亮LED封裝體101之正面i〇ia。 並且，利用該照明光照亮之正面l〇la，於利用第2分光鏡 77之反射光依序通過第1分光鏡75與帶通濾波器74之後， 藉由成像透鏡73成像於CCD照相機72而被觀察。如此，可 透過CCD照相機72 ’ 一邊觀察LED封裝體101之正面 101a，一邊雷射加工。 又’面向LED封裝體101之正面1〇la之位置，係配設有 用於喷射輔助氣體（例如，可例示氧氣氣體或空氣等。）之 喷射喷嘴91。噴射喷嘴91係用於從喷射口 93喷射輔助氣體 之喷嘴，其具有大致中空之圓錐台形狀。被喷射之輔助氣 體，係將在LED封裝體1〇1照射樹脂切斷雷射光束以及陶 瓷切斷雷射光束L2，而切斷LED封裝體1 〇 1之際，自LED 封裝體101所產生之不要物（例如，LEd封裝體1 〇 1之融解 物）吹飛》相關之喷射喷嘴91係已常使用於雷射加工裝 置，例如，可使用如日本特許第3789899號公報之圖2、圖 159366.doc 21 201233475 4及圖5等揭示之喷嘴。 喷射喷嘴91中連接未圖示之輔助氣體配管。又，藉由供 給喷射喷嘴91加壓之輔助氣體，自辅助氣體喷射口 93，向 LED封裝體101之正面101a，有氣勢地喷輔助氣體。 並且，輔助氣體噴射口 93，係使樹脂切斷雷射光束L1及 陶瓷切斷雷射光束L2也通過，藉此，照射樹脂切斷雷射光 束L1及陶瓷切斷雷射光束L2在LED封裝體101之正面101a 上。因向LED封裝體101之正面101 a，一邊照射樹脂切斷 雷射光束L1及陶瓷切斷雷射光束L2，一邊喷射輔助氣體， 故可有效實施雷射加工（此處係切斷）》 圖3A-C係顯示照射於LED封裝體101之正面i〇ia(此處形 成與圖1中之Z軸平行之平面狀）之樹脂切斷雷射光束L1& 陶瓷切斷雷射光束L2之照明狀態之圖；具體而言，圖3A 係顯示照射於LED封裝體101之正面l〇ia之樹脂切斷雷射 光束L1及陶瓷切斷雷射光束L2之實際照射狀態之圖；圖 3B係僅顯示圖3A所示物中，樹脂切斷雷射光束L1照射部 分之圖；且圖3C係僅顯示圖3A所示物中，陶兗切斷雷射 光束L2照射部分之圖。參照圖3 A-C，說明照射於LED封裝 體101之正面101a之樹脂切斷雷射光束L1、及陶究切斷雷 射光束L2之照射狀態。又’圖3 A-C中，為容易理解樹脂 切斷雷射光束L1及陶瓷切斷雷射光束L2之照射狀態，於各 自之照射區域皆附有影線。 如圖3B所示’樹脂切斷雷射光束L1，係照射於包圍存 在於正面101a之中心C1之半徑rl之圓之中心C2之半徑^之 I59366.doc -22- 201233475 圓之區域（自半徑rl之圓除去半徑r2之圓之形狀之區域）。 即，樹脂切斷雷射光束L1係照射於平面視之下之圓環形狀 (以下稱作「圓環」。）之區域。又，如圖3C所示，陶瓷切 斷雷射光束L2，係照射於存在於正面1 〇 1 a之中心C2之半徑 r2(但，r2<rl)之圓形之區域。該等之樹脂切斷雷射光束L1 及陶瓷切斷雷射光束L2，係以存在於正面1〇1 a之中心(:^與 中心C2—致，且成為圖3A所示之1點即C點之方式，同心 照射於正面101 a上。因此，存在於陶瓷切斷雷射光束匕2照 射區域之外側’而照射有樹脂切斷雷射光束L1之區域T之 寬度’變成不論任何方向均相同（具體而言為（rl_r2))。 又’實際上，樹脂切斷雷射光束L1 ’於半徑r2之圓之内側 區域，亦具有小的強度分布。 但，可藉由受反射鏡35之開口 35h之直徑、反射面35s之 曲率、及反射面35s影響之樹脂切斷雷射光束L1，變更所 照射之區域的大小等。藉此’可成為樹脂切斷雷射光束L i 至少與陶瓷切斷雷射光束L2照射區域之一部分重疊而照射 著之狀態。進而，可成為陶瓷切斷雷射光束L2照射區域之 全域上’照射有樹脂切斷雷射光束以之狀態。 照射於LED封裝體1 〇 1之樹脂切斷雷射光束l 1，主要係 使矽樹脂層105熱分解等。又’照射於LED封裝體1〇1之陶 究切斷雷射光束L2 ’係使陶瓷基板1〇3熔融等《並且，利 用自喷射喷嘴91之輔助氣體喷射口 93，向正面1〇1 a喷射之 輔助氣體，吹飛並除去該等LED封裝體101之熱分解或熔 融等所產生之物質。藉此可切斷加工LED封裝體1 〇 1。 159366.doc -23- 201233475 圖4係顯示利用本裝置u切斷LED封裝體ι〇ι處的平面圖 (顯示自喷射喷嘴91之輔助氣體喷射口 93側所觀察到之 處）’圖5係圖4之A-A剖面圖。參照圖4及圖5，對利用本裝 置11之LED封裝體1〇1之切斷步驟進行說明。 如圖3A所不，樹脂切斷雷射光束u及陶瓷切斷雷射光 束L2，係向正面i〇ia，分別照射於同心狀之圓環及圓之區 域。並且，為使LED封裝體1 〇 1係相對於樹脂切斷雷射光 束L1及陶瓷切斷雷射光束L2，在圖4及圖5中，向箭頭Μ方 向移動，支撐載物台201係以該方式移動。此處移動方向 (箭頭Μ)係與上述之Υ軸相同之方向。 在LED封裝體1 〇 1上，自正面丨0丨&側照射樹脂切斷雷射 光束L1及陶瓷切斷雷射光束L2。首先，利用樹脂切斷雷射 光束L1使矽樹脂層105被熱分解等。又，利用自喷射喷嘴 91之輔助氣體喷射口 93向正面1〇1 a喷射之輔助氣體，吹飛 已熱分解之矽樹脂層105。藉此除去矽樹脂層丨05。又，利 用樹脂切斷雷射光束L1除去矽樹脂層1〇5，而露出陶瓷基 板 103。 接著，藉由向露出之基板103上照射陶瓷切斷雷射光束 L2使陶竞基板103炫融等。又，利用自喷射喷嘴91之輔助 氣體喷射口 93所噴射之輔助氣體，吹飛因陶瓷基板丨〇3熔 融而產生之物質。藉此除去陶瓷基板103。 如上所述，利用樹脂切斷雷射光束L1及陶瓷切斷雷射光 束L2之矽樹脂層105及陶瓷基板103之除去，伴隨著LED封 裝體101相對於樹脂切斷雷射光束L1及陶瓷切斷雷射光束 159366.doc •24· 201233475 頭mm之移動’陶曼切斷雷射光束照射於[肋 封裝體ιοί之執跡（徑跡）依序產生。藉此，形成樹腊切斷雷 射光束L1所形成之矽樹脂層1〇5之分斷溝⑼d、及陶瓷切 斷雷射光束L2所形成之陶瓷基板1〇3之分斷溝 103d °利用 ' 至此之步驟切斷LED封裝體1〇1。 -又，可一邊保持圖3A之狀態，一邊沿χ轴及¥轴適宜地 使支撐載物台201移動。藉此，可沿平面視之下之曲線切 斷LED封裝體1〇1。 又，（參照圖1)鏡驅動裝置37，係以特定之角度正逆轉 動反射鏡35者，藉此，一邊照射樹脂切斷雷射光束L1及陶 瓷切斷雷射光束L2，一邊改變相對於陶瓷切斷雷射光束L2 之照射區域之樹脂切斷雷射光束L1之照射區域之相對位 置。 圖6A-6C係說明相對於利用鏡驅動裝置37之陶瓷切斷雷 射光束L2照射區域之樹脂切斷雷射光束£1照射區域之相對 位置變化之圖’（顯示自與圖3 A同樣之位置觀察到之處）。 圖6B係顯示與圖3A同樣之狀態；具體而言，樹脂切斷雷 射光束L1及陶瓷切斷雷射光束[2，係以中心C1與中心C2 成為相同點C之方式同心地照射。 將從圖6B之狀態，驅動鏡驅動裝置37,正向轉動反射鏡 3 5之狀態顯示於圖6 A。相較於圖6B之狀態，相較於陶究 切斷雷射光束L2之中心C2，樹脂切斷雷射光束L1之中心 C1係相對於LED封裝體101之移動方向（箭頭Μ方向）逆向移 動著。如此藉由使兩中心C1、C2偏心，相較於固定圖6Β 159366.doc -25- 201233475 之狀態並照射之情形，可增加LED封裝體101到達陶瓷切 斷雷射光束L2照射區域之前之樹脂切斷雷射光束L1之照射 時間。 將從圖6B之狀態’驅動鏡驅動裝置37,逆向（與圖6A為 逆方向）轉動反射鏡35之狀態顯示於圖6C。相較於圖6B之 狀態，相較於陶瓷切斷雷射光束L2之中心C2，樹脂切斷雷 射光束L1之中心C1係相對於LED封裝體101之移動方向（箭 頭Μ方向）向同方向移動著。如此藉由使兩中心ci、C2偏 心’相較於固定圖6Β之狀態並照射之情形，可減少lED封 裝體101到達陶瓷切斷雷射光束。照射區域之前之樹脂切 斷雷射光束L 1之照射時間。 藉由以圖6B-圖6A-圖6B-圖6C-圖6B之順序使樹脂切斷雷 射光束L1之中心C1移動，可於陶瓷切斷雷射光束L2之照 射區域向Y軸方向掃描樹脂切斷雷射光束L1。藉由重復該 掃描，使對被加工物即LED封裝體101，週期性地照射樹 脂切斷雷射光束L1#質上變得可能。因此，關於樹脂切斷 雷射光束L1 ’相較於高能量短時間照射之方式，低能量長 時間照射LED封裝體變得可能。因此，可抑制樹脂切斷雷 射光束L1對陶竟基板1〇3所造成之損害（熱影響）。因而可 提局被切斷之部分之等級。χ，於掃描樹脂切斷雷射光束 L1之if形中’可使辅助氣體喷射口93成為沿掃描方向之扁 D 〇 又’於較切斷雷射光束L2之照射區域，使樹脂切斷雷 射光束L1掃拖之情形中，最好向0方向適宜旋轉(轉動)圓1 159366.doc •26- 201233475 所示之支撐載物台2〇 1。益+ -r你„入丄 藉此可將除去了矽樹脂層105部分 保持一定之寬度。進而， J…干面視之下之曲線切斷被加 工物。該情形中，最好藉由向θ方向適宜旋轉(旋轉)支撐載 物台201 ’使被照射部分之其曲線之接線方向與樹脂切斷 雷射光束L1之掃描方向_致。藉此可將除去了碎樹脂層 105之部分保持一定之寬度。 又’亦可固定圖6Α之狀態切斷LED封裝體1〇1。藉此， 右考量某-破照射部分，則可於利用陶瓷切斷雷射光束[2 照射之則，延長利用樹脂切斷雷射光束u照射之時間。因 而’可於於照射陶兗切斷雷射光束L2之前，更為確實地除 去矽樹脂層105。藉此可提高被切斷部分之等級。 又，就完全地切斷被加工物及LED封裝體1〇1之加工（全 切）進行了說明。但並不局限於此，本發明亦可適用於在 被加工物於厚度方向之途中（厚度之一半程度）實施形成溝 之加工（半切）之情形。又，本發明亦可適用於形成淺溝之 加工、形成貫通孔之加工、形成未穿孔之加工、及形成扁 口之加工等。 此處作為被加工物，係以LED封裝體1〇1為例進行了說 明，該LED封裝體101係具有：平板狀之陶瓷基板1〇3 ;於 陶瓷基板103之正面l〇3a上規則配列之LED晶片（未圖示）； 及密封（樹脂封止）以密接於陶瓷基板1〇3之正面1〇3a之方式 而形成之各個之LED晶片之矽樹脂層1〇5。本裝置丨丨係作 為為將LED封裝體101切斷成各個之lED元件之裝置而使 用。因此本裝置11中，為避免喷射喷嘴91干涉（抵接）到包 159366.doc •27- 201233475 含於LED封裝體101之LED晶片部分之隆起（LED元件之透 鏡刀之咼度），用於喷射辅助氣體之喷射喷嘴Μ之頂端 (輔助氣體喷射口 93開口之面）與被加工物（LED封裝體1〇1) 之間之距離（喷嘴高度），可設定成較包含於LED封裝體ι〇ι 之透鏡部分之高度（例如，1 〇〜15 mm)大（例如，超過15 mm)之方式進行 又，此處作為被加工物以LED封裝體1〇1為例進行了說 明，但毋庸贅言並不限定於led封裝體101 ;又此處係具 有陶瓷基板103與矽樹脂層105之2層之被加工物，但並不 限定於如此之2層，亦可為2層、3層、4層、及5層般地包 含複數層之被加工物。 如以上說明所述，本裝置丨丨係藉由對包含形成正面1〇1& 之第1層（矽樹脂層105)、及存在於第1層（矽樹脂層1〇5)之 背面側之第2層（陶瓷基板1〇3)而成之被加工物（LED封裝體 101)，自正面101a側照射雷射光束（樹脂切斷雷射光束L1 及陶瓷切斷雷射光束L2)來加工被加工物（LED封裝體1 〇 1) 之雷射加工裝置；其係具備：照射機構（其係包含照射樹 脂切斷雷射光束L1之第1產生機構3 1、及照射陶瓷切斷雷 射光束L2之第2產生機構51而成。），其係照射雷射光束 (樹脂切斷雷射光束L1及陶瓷切斷雷射光束L2);及移動機 構（此處為支樓載物台201)，其係使被加工物（LED封裝體 101)沿被加工物（LED封裝體101)之正面101a，對於照射機 構（苐1產生機構3 1及第2產生機構5 1)相對移動；且照射機 構（第1產生機構31及第2產生機構51)係具有：第2照射機構 (第2產生機構51)，其係對第1層（矽樹脂層1〇5)之正面乏第 159366.doc 28 · 201233475 2區域（圖3C) ’照射適合第2層（陶瓷基板103)之加工之第2 雷射光束（陶瓷切斷雷射光束L2);及第1照射機構（第1產生 機構31)，其係對包圍第2區域（圖3C)之第1區域（圖3B)，照 射適合第1層（矽樹脂層105)之加工之第丨雷射光束（樹脂切 斷雷射光束L1)。 又’第1層（矽樹脂層105)之熔融溫度，係比第2層（陶曼 基板103)之熔融溫度低。又，本裝置丨丨中，最好以第1雷 射光束被第1層吸收，而實質上並未到達第2層般之條件來 加工。若第1雷射光束未被第1層完全吸收而到達第2層， 則會導致第2層料想不到之溫度上昇，而有因第2層加熱第 1層導致第1層融解或變質等，引起被加工物之加工精確度 下降或劣化之情形。 本裝置11中，第1區域（圖3B)中存在於第2區域（圖3C)之 外側之單獨第1區域（圖3 A中為存在於照射樹脂切斷雷射光 束L1之區域内，照射陶瓷切斷雷射光束匕2之區域之外側之 甜甜圈狀部分）之寬度，係沿被加工物（LED封裝體101)之 正面101a之任何方向均大致相等者（此處為（rl _ r2))者。 本裝置11中，第1區域（圖3B)之外緣線（中心Cl之半徑rl 之圓周）、及第2區域（圖3C)之外緣線（中心C2之半徑r2之圓 周）’係形成為存在於第1層（矽樹脂層105)之正面之相同點 (圖3 Α之點C)為中心之同心圓，且於兩外緣線（中心c丨與中 心C2於點C一致之情形之中心C1之半徑rl之圓周與中心c2 之半徑r2之圓周）之間之全域上，照射.第1雷射光束（樹脂切 斷雷射光線L1)。 159366.doc -29- 201233475 本裝置11中，亦可以第1區域（圖3B)與第2區域（圖3C)之 至少一部分重疊之方式實施。 本裝置11中，進而具備用於喷射喷在被加工物（LED封裝 體101)上之輔助氣體之喷射噴嘴91 ;且第丨雷射光束（樹脂 切斷雷射光束L1)、及第2雷射光束（陶瓷切斷雷射光束 L2)，係通過喷射喷嘴91之輔助氣體喷射口 ％，照射於被 加工物（LED封裝體101)。 本裝置11中，照射機構（第1產生機構31及第2產生機構 5 1 )，係可一邊照射第1雷射光束（樹脂切斷雷射光束[1)及 第2雷射光束（陶瓷切斷雷射光束L2)，一邊變更相對於第2 區域（圖3C)之第1區域（圖3B)之相對位置者。 本裝置11中’照射機構（第1產生機構31及第2產生機構 51)，係具有通過開口（開口 35h)，其係使第1雷射光束（樹 脂切斷雷射光束L1)及第2雷射光束（陶瓷切斷雷射光束L2) 中’沿特定光路（此處為沿Z方向之光路）之任一方之光束 (此處為第2雷射光束（陶瓷切斷雷射光束L2))通過；且具有 反射鏡35者，其係以沿該光路（此處為沿z方向之光路）之 方式反射從與該光路（此處為沿Z方向之光路）相異之方向 (此處為X方向）入射之任一另一方之光束（此處為第丨雷射 光束（樹脂切斷雷射光束L1))。 本裝置11中，第1雷射光束（樹脂切斷雷射光束Ll)為上 述另一方之光束，且藉由使反射鏡35之反射面35s相對於 上述光路（沿Z方向之光路）移位，而可一邊照射第丨雷射光 束（樹脂切斷雷射光束L1)、及第2雷射光束（陶曼切斷雷射 159366.doc •30* 201233475 光束L2) ’ 一邊變更相對於第2區域（陶瓷切斷雷射光束L2 之照射區域）之第1區域（樹脂切斷雷射光束L1之照射區域） 之相對位置（此處係利用鏡驅動裝置37驅動反射鏡35)。 本裝置11中’照射上述一方之光束（此處為第2雷射光束 (陶曼切斷雷射光束L2))之一方光束產生機構（此處為第2照 射機構（第2產生機構51))，係具有聚光透鏡57，該聚光透 鏡係折射通過上述通過開口（開口 35h)之前之上述一方之光 束（此處為第2雷射光束（陶瓷切斷雷射光束L2);且相較於 該聚光透鏡57吸收上述一方之光束（此處為第2雷射光束（陶 資·切斷雷射光束L2)之比率，該聚光透鏡57吸收上述他方 之光束（此處為第1雷射光束（樹脂切斷雷射光束Li)之比率 較大。 本裝置11中，第1層（矽樹脂層105)係由樹脂材料（矽樹 月曰）形成，第1雷射光束（樹脂切斷雷射光束L1)係上述另一 方之光束。 本裝置11中，上述另一方之光束（此處為第丨雷射光束（樹 脂切斷雷射光束L1))係未通過透鏡（僅利用反射鏡35之反射 而聚光） 圖7、圖8A及圖8B係顯示本發明之其他之實施形態之雷 射加工裝置（本裝置）11的概念剖面圖。因與圖1等所示之一 貫施形態之雷射加工裝置11基本上成相同之構成，故省略 包含與被加工物相關之物之重複揭示。本裝置11係具備： 照射樹脂切斷雷射光束以之第！產生機構31 ;照射陶瓷切 斷雷射光束L2之第2產生機構51 ;及觀察[ED封裝體1〇1之201233475 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a laser processing apparatus for laser processing; more specifically, it comprises a second layer formed by forming a front surface, and A workpiece obtained by the second layer on the back side of the first layer is irradiated with a laser beam from the surface side to process the workpiece. [Prior Art] By processing a workpiece including a first layer forming a front surface and a second layer existing on the back side of the i-th layer, a laser beam is irradiated from the front side to process a workpiece. Laser processing apparatuses are known to the public (for example, Patent Document 1, etc.). Patent Document 1 discloses a laser processing apparatus for cutting (processing) a workpiece. The workpiece is "for example, a first layer (42, FIG. 2) containing copper and/or epoxy material, and The second layer (44) of the molding compound (in the detailed description of the invention of Patent Document 1, the last part of the paragraph No. 13). In detail, in the detailed description of the invention of Patent Document 1, paragraph numbers 0014 to 15 disclose the laser processing apparatus cited below. Fig. 3 shows a cutting region according to an embodiment of the present invention. The first laser beam (10) and the second laser beam (2) are irradiated by a χ_γ stage (3〇). The 1C package (4〇) is arranged in the same horizontal plane. In this particular implementation, the first laser beam (1〇) is 50 W at 532 nm with a pulse repetition rate of at most 5 kHz. The Nd:YAG laser source is generated; the second laser beam (2〇) is generated by a Nd:YAG laser with a pulse duration of 7 ns of 1〇64 nm. The IC package (40) is fixed to XY. Stage 159366. Doc-4, 201233475 (30), and comprising: a first layer (42) comprising a copper and/or epoxy material, and a second layer (44) comprising a shaped compound. In the first step, the first laser beam 集 is bundled at the first laser focus on the first layer (42) on the substrate. The laser beam (20) is emitted in the vicinity of the laser beam (1〇) and is concentrated on the second laser focus on the substrate. The second focus is opposite to the direction of operation of the substrate from the first focus offset. Direction and position on the second layer (44). The χ-γ stage is responsible for the 1C package (40) that moves along a particular track (left to right in the figure) at a particular speed. The first laser beam (10) scans the first layer (42)' along the track and penetrates the entire thickness of the second layer (42) to form a first slit (142). The second laser beam (20) is laterally offset to the downstream side of the first laser beam and scans along the track (exposed at the time) the second layer (44) and penetrates the second layer (44). The thickness of the whole is formed to form the second kerf 44"). Therefore, 1 (the encapsulation system is separated by two slits (142, 144).) (End of the citation) Here, the entire disclosure of the patent document is incorporated herein by reference. Part of the applicant and the inventor of the present invention is an injection nozzle for jetting an auxiliary gas sprayed on the front side of the machined surface in the laser processing for processing the front side on the front side of the workpiece. Patent application 2 (Patent Document 2). Patent Document 2 discloses (in the detailed description of the invention of Patent Document 2, paragraph number 0009) "an injection nozzle for irradiating a laser beam to be processed. a spray nozzle for jetting the auxiliary gas sprayed on the front surface of the processed surface in processing the front side of the object; and the system is provided. a constriction portion formed by the auxiliary gas passing through the injection nozzle 159366. Doc 201233475 internal flow path, the cross-sectional area decreases as the row goes downstream; the expansion portion receives the auxiliary gas passing through the constricted portion, and the cross-sectional area increases as the row goes downstream, and the auxiliary portion is sprayed at the tip end portion (Gas) (A patent application of Patent Document 2, which is patented under Japanese Patent No. 3789899). Here, the disclosure of the entire disclosure of Patent Document 2 is incorporated herein by reference. PRIOR ART DOCUMENT PATENT DOCUMENT [Patent Document 1] pp. 2003-3 721 8 (for example, paragraphs of the abstract, detailed description of the invention, paragraph numbers 〇〇丨3 to 〇〇丨5, 2nd and 3rd [Patent Document 2] Japanese Laid-Open Patent Publication No. 2004-283845 (for example, paragraphs 〇〇〇1 to 〇〇u, 1 and 〜 to 15, etc. in the detailed description of the abstract and the invention, etc. SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION According to the laser processing apparatus disclosed in Patent Document 1, "the first laser beam (1 〇) scans the 丨 layer (1) along the track and penetrates the 丨 layer (1) The thickness of the entire first slit (142) is formed. The second laser beam (20) is laterally offset to the downstream side of the first beam, and is scanned along the track (exposed at the time). The layer (44) penetrates the entire thickness of the second layer (44) to form a second slit (144). Therefore, the IC package system is separated by two sipe and mu sentence" (paragraph No. 0015 in the detailed description of the invention of Patent Document 1); therefore, the trajectory (path) with the first laser beam (1 〇) Trace) consistent, necessary in I59366. Doc 201233475 The second laser beam (10) is scanned on the downstream side, and is cut off in order to scan the specific track for both the third laser beam (10) and the second laser beam (2G). The problem that the degree of freedom of the shape of the track (track) is lowered (for example, various curves as a cut track (track) cannot be freely selected). Therefore, the present invention provides a laser processing apparatus for the purpose of providing a workpiece including a second layer formed on the front side and a second layer on the back side of the second layer, from the front side. The laser beam is irradiated to process the object to be processed; and the shape of the track (track) for processing the workpiece is not limited to 'various curves which can be freely selected as tracks (tracks). Solution to Problem A laser processing apparatus (hereinafter referred to as "the present apparatus") of the present invention is a workpiece including a first layer forming a front surface and a second layer forming a back surface side of the first layer a laser beam irradiated from the front side to process the object to be processed; and an irradiation mechanism for irradiating the laser beam and a moving mechanism for relatively moving the workpiece along the front surface of the workpiece relative to the irradiation mechanism; The irradiation unit includes a second irradiation unit that is attached to the second region on the front surface of the first layer, irradiates the second laser beam suitable for processing of the second layer, and a second illumination unit that surrounds the second region In the first region, the first laser beam suitable for the processing of the second layer is irradiated. In the present invention, the workpiece is processed by irradiating a laser beam from the front side to the workpiece including the first layer forming the front surface and the second layer existing on the back side of the first layer, thereby processing the laser processing of the workpiece. Device. The workpiece has a front surface illuminating the laser beam from the front side. The workpiece includes a first layer and a second layer present on the back side of the first layer; and the front side of the first layer is formed by 159366. Doc 201233475 The front side of the workpiece (the side that illuminates the side of the laser beam) has a second layer on the side of the back surface (the side opposite to the front surface of the ith layer constituting the front surface of the workpiece). The term "X" is a process in which the shape of the workpiece is changed by irradiating the laser beam to melt or decompose the workpiece. In general, the device includes an irradiation mechanism and a moving mechanism. The illumination mechanism irradiates the laser beam from the front side of the workpiece. The moving mechanism relatively moves the workpiece along the front side of the workpiece relative to the irradiation mechanism. Here, "relatively moving the workpiece relative to the irradiation means" is sufficient if the workpiece is relatively moved relative to the irradiation means, and the absolute position may be any of the following three cases: the irradiation means and In the workpiece, when only the irradiation mechanism moves and the workpiece is stationary, the irradiation mechanism and the workpiece are moved only by the workpiece, and the irradiation mechanism is stationary; and the irradiation mechanism and the workpiece are both moved. Further, in the present invention, the irradiation means includes the second irradiation means and the first irradiation means. The second irradiation means is applied to the second region on the front side of the second layer, and irradiates the second laser beam suitable for the processing of the second layer. The first irradiation means is for irradiating the first laser beam suitable for the processing of the first layer in the i-th region surrounding the i-th layer of the second region. In other words, the second laser beam suitable for the processing of the second layer is irradiated in the second region, and the first laser beam suitable for the processing of the second layer is irradiated in the first region surrounding the second region, so that the second laser beam is surrounded. In the first region of the second region irradiated by the laser beam, the first layer is melted or decomposed by the irradiation of the first laser beam (to 159,366. Doc 201233475, referred to as "melting or the like", removes the second layer β. Therefore, the second laser beam is irradiated in the second region, and the first beam is irradiated to the first region surrounding the second region. The mechanism moves the workpiece relative to the irradiation mechanism along the front surface of the object to be reinforced, and then removes the second layer exposed by the irradiation of the second laser beam, and irradiates the second laser beam to the second layer. It is removed by melting and so on. Since the first region surrounds the second region, the i-th region exists in any direction along the force: the front surface of the workpiece as viewed from the second region, and therefore, regardless of any direction along the front surface of the workpiece When the object to be processed is relatively moved by the irradiation means, the second layer is exposed in the second region where the second laser beam is irradiated, whereby the second laser beam is irradiated to the second layer to realize processing by the apparatus. As described above, in the device, the second region surrounds the second region of the second laser beam that is suitable for the second layer, and the first laser beam is irradiated in the first region regardless of the In any direction on the front side of the workpiece, the workpiece is relatively moved relative to the illumination mechanism, and the second layer is exposed in the second region irradiating the second laser beam. Thus, the second laser beam is irradiated on the second layer. And the shape of the track (track) of the workpiece to be processed is not limited by scanning the second laser beam along the track (track) of the processed object, and can be freely selected as the track (track). The various curves are free to process. In the present device, the width 单独 of the single first region existing on the outer side of the second region in the second region is substantially equal to any direction in the front side of the workpiece (hereinafter referred to as "equal width device". ). In this device, any 159366 along the front side of the workpiece is observed from the second area. Doc 201233475 The first area exists in the direction. Therefore, the second layer will be exposed in the second area irradiated by the second laser beam regardless of the relative movement of the workpiece to the irradiation mechanism in any direction along the front surface of the workpiece. This can be achieved by the second layer irradiating the second laser beam by the processing of the device. Therefore, by making the width of the individual second region existing on the outer side of the second region in the first region substantially equal in any direction along the front surface of the workpiece, the relative movement to the illumination mechanism along the workpiece is relatively moved. Regardless of the direction of the front side of the workpiece, the first laser beam is used to remove the i-th layer. Therefore, the processing from the first layer to the second layer can be surely performed irrespective of the relative movement direction of the workpiece with respect to the irradiation mechanism. (Because the direction of movement is not considered, the degree of freedom in the shape of the track (track) for machining the workpiece is high, and the curve processing can be performed freely.). In addition, the width of the single first region existing on the outer side of the second region in the first region means a half line which is an end point of the center of gravity of the second region (a line extending radially from the center of gravity) The distance between the individual third regions; the width of the so-called first region is substantially equal in any direction along the front side of the workpiece, and the distance associated with any one of the straight lines is also substantially equal. The case of the uniform width device may be the outer edge line of the first region and the outer edge line of the second region, formed as concentric circles centered on the same point existing on the front surface of the second layer, and on both outer edges The first laser beam is illuminated across the entire line. In this way, the outer edge line of the first region and the outer edge line of the second region are formed as concentric circles centered on the same point, and the outer edge lines of the first region (the outer edge of the second region and the outer edge of the second region) The entire field between the lines) illuminates the first laser beam, while 159366. Doc 201233475 Regardless of the relative movement direction of the workpiece to the illumination mechanism, it is possible to reliably make the width of the first laser beam (the same radius difference between concentric circles) that she is the same' and regardless of the use of the first! The first of the laser beam! Since the removal of the layers is performed in the same manner as in any relative movement direction, the processing from the first layer to the second layer can be performed more surely (the track (track) of the processed object is processed regardless of the moving direction. The shape has a high degree of freedom, and the curve processing can also be performed freely.). In the device, the first region may overlap with at least a portion of the second region. And illuminating the second region of the second laser beam by overlapping at least a portion of the second region irradiating the second laser beam (partial or all of the second region) At least a part (partial or all of the second area), the illumination is on! The laser beam (again, since the 帛1 region surrounds the (10)th domain, the first region overlapping at least a part of the second region (partial or all of the second region) is a portion of the !! region.). In this way, by irradiating (four) the first beam at least part of the second region (partial or all of the second region), even if the first layer is formed in the second region of the second laser beam (for example, , the case where the removal of the ith layer of the illuminating beam is incomplete or the attachment of an undesired object such as a solder material due to removal of the layer by the first laser beam, etc.) At least part of the second area (partial or all of the second area)! The laser beam can remove the residue such as shai, etc., so that the second layer can be surely implemented (and the residue that has formed the i-th layer existing in the second region is removed) to the second region. The way to illuminate the first laser beam is 159366. Doc -11 - 201233475 "There is further provided with an injection nozzle for spraying an auxiliary gas sprayed on the workpiece; and the first laser beam and the second laser beam ' may also be auxiliary gas injection through the injection nozzle The person who shines on the workpiece. As described in the above Patent Document 2, in the laser processing in which the laser beam is irradiated on the front surface of the workpiece to process the front surface, the workpiece is melted by irradiation of the laser beam, and the like is removed. The melted material of the workpiece is processed efficiently, and a plurality of injection nozzles for spraying the assist gas on the workpiece are disposed. The injection nozzle is provided with an auxiliary gas injection port for injecting an assist gas on the workpiece, but the second laser beam and the second laser beam may be irradiated from the auxiliary gas injection port to the workpiece. In addition, in addition to the injection nozzle of the auxiliary gas, the condition of the optical path of the first laser beam and the second laser beam is separately ensured, and the device can be miniaturized. The auxiliary gas injected from the injection port is efficiently blown off to remove substances (exhaust gas, slag, etc.) generated by the processing of the first laser beam and the second laser beam. In the device, the irradiation means may be configured to change the relative position with respect to the second region of the second region while irradiating the second laser beam and the second laser beam. In the device, the first layer is removed by the first laser beam irradiated in the second region, whereby the second layer is exposed in the second region where the second laser beam is irradiated, and the second laser beam is irradiated to the second layer. The processing using the device is realized. In such a device, it is important that the first layer is smoothly removed before the workpiece reaches the second region where the second laser beam is irradiated, and therefore, the workpiece 159366 can be adjusted. Doc -12- 201233475 The irradiation time of the first laser beam before reaching the second area, or adjusting the output of the i-th laser beam. Further, the irradiation time of the first laser beam before the workpiece reaches the second region is specifically a manner of adjusting the moving speed of the workpiece relative to the irradiation mechanism relative to the front surface of the object to be cured. The relative position of the second region with respect to the second region may be changed while irradiating the first laser beam and the second laser beam. For example, in the width of the individual second region existing on the outer side of the second region in the i-th region, if the width of the irradiated portion of the ninth laser beam before the workpiece reaches the second region is increased, the irradiation can be made The time is increased; if the width is reduced, the irradiation time can be reduced. In the device, the illumination mechanism has an opening through which the ith laser beam and the second laser beam are along a specific optical path. One of the beams passes through; and has a mirror (hereinafter referred to as "mirror device", which reflects the light beam from any other direction that is different from the optical path along the optical path. The mirror 'passes a light beam along any one of the first laser beam and the second laser beam along a specific optical path through a through-opening having a mirror and using a reflecting surface of the mirror (may also be in the form of a donut a concave surface formed through the periphery of the opening] reflects a light beam of any one of the j-th laser beam and the second laser beam incident in a direction different from the specific optical path along the specific optical path. The light beam along one of the specific optical paths and the other light beam incident from a direction different from the specific optical path can be smoothly illuminated along the specific optical path, thereby being able to smoothly follow the same optical path on the workpiece. The ground irradiation wavelength is different from the first 159366 generated by the different emission source. Doc -13· 201233475 Laser beam and 2nd laser beam. Further, in the case where the light beam passing through the one of the openings is the second laser beam, the other of the light beams reflected by the reflecting surface of the mirror is the second laser beam; conversely, passing through the opening In the case where the light beam of the one side is the second laser beam, the other side of the light beam reflected by the reflecting surface of the mirror is the first laser beam β mirror device, and the first laser beam is the above The other light beam 'and the displacement of the reflecting surface of the mirror relative to the optical path' may change the first region with respect to the second region while illuminating the first laser beam and the second laser beam Relative position. Thereby, the other one of the light beams reflected by the reflecting surface of the mirror is used as the first laser beam, and the light beam passing through the opening of the mirror passing through the specific optical path is used as the second laser beam; By constituting a simple configuration in which the reflecting surface of the mirror is displaced relative to the specific optical path, the first laser beam and the second laser beam can be irradiated while being smoothly changed with respect to the second region (the second thunder passing through the opening) The relative position of the first region (the first laser beam reflected by the reflecting surface) of the beam. In the case of the mirror device, the one-side beam generating means illuminating the one of the light beams may be a condensing lens that refracts the light beam passing through the one before passing through the opening; and compared to the above-mentioned one The ratio of the light beam absorbed by the condensing lens is large, and the ratio of the other light beam absorbed by the condensing lens is large (hereinafter referred to as "lens absorption ratio difference device"). To irradiate a laser beam onto a workpiece to process the workpiece, it is usually 159366. Doc •14· 201233475 Concentrate the laser beam near the front of the workpiece. Any of the first laser beam and the second laser beam can be reflected by the reflecting surface of the mirror in the mirror, but the light beam can be concentrated by the collecting lens (reflex The mirror is located on the more upstream side of the beam other than the beam, and the beam outside the beam passes through the aperture through the condenser lens. At this time, in the case where the absorption ratios of the first laser beam and the second laser beam by the collecting lens are different, the reflecting surface of the mirror is used to reflect the collecting light along the specific optical path. The absorbed beam (to prevent the light beam that is easily absorbed by the collecting lens from passing through the collecting lens) can reduce the absorption loss caused by the collecting lens, that is, the first laser beam and the second laser beam A light beam that is easily absorbed by the condensing lens is used as the light beam of the other side (reflected and condensed by the reflecting surface of the reflecting mirror), and a light beam that is hard to be absorbed by the condensing lens is used as the light beam of the one side (concentrating by the condensing lens) It can be implemented by means of the above-mentioned opening of the mirror. In this case, the ratio of the light beam absorbed by the condensing lens is larger than the ratio of the light beam absorbed by the condensing lens; and the light beam generating mechanism that illuminates one of the light beams is There is a collecting lens that refracts the light beam of the above-described one passing through the opening. In addition, the "ratio of the absorption of the light beam by the condensing lens" is such that the intensity of the light beam incident on the condensing lens is 10, and the intensity of the light beam transmitted through the condensing lens (the intensity emitted from the condensing lens) is set to 11, then the ratio is expressed as (10-11)/10. The lens absorption ratio difference may be a case where the first layer is formed of a resin material and the first laser beam is the other beam. 159366. Doc -15- 201233475 In the case where the first layer is a resin material, the first laser beam is a laser beam (absorbed by a resin material) which is applied to a layer of a resin material (layer 1). Since such a laser beam suitable for processing a resin material layer is usually easily absorbed by a collecting lens, it can also be a light beam of the other side (reflecting light by a reflecting surface of the reflecting mirror). The lens absorption ratio difference may be the case where the other beam does not pass through the lens. In the lens absorption ratio difference device, the light beam which is easily absorbed by the lens is set as the light beam of the other side, and the light is reflected by the reflection surface of the mirror. In this case, if the light is reflected by reflecting the other light beam by the reflecting surface of the reflecting mirror, the light beam which is easily absorbed by the lens can be prevented from being absorbed by the lens and lost. [Embodiment] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the invention is not limited thereby and is subject to any limitation. Fig. 1 is a conceptual cross-sectional view showing a laser processing apparatus (the present device) u according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing the LED package 1 〇 1 (object to be processed) processed by the apparatus n. The device 11 will be described with reference to Figs. 1 and 2 . Here, the LED package 1〇1, which is a workpiece, has a flat ceramic substrate 103 and a lithographic resin layer 105 which is formed to be in close contact with the front surface 103a of the ceramic substrate 103; The back surface of the LED package body 101 is formed on the back surface of the ITO 3 and the front surface 101a of the LED package body 101 is formed on the front surface of the enamel resin layer 510. As the material of the ceramic substrate ι〇3, it is 159366. Doc • 16 - 201233475 For example, alumina (Al2〇3) and aluminum nitride (AIN) are listed. Further, although not shown here, in the LED package 1〇1, a led wafer (a light-emitting diode wafer is not shown) is regularly disposed on the front surface 103& of the ceramic substrate 103. Each of the led wafers is sealed (resin sealed) with a resin layer 105. In the figure and Figure 2, there is a cross section of the LED chip. The device 11 is used to cut and separate a composite mechanism having, for example, two layers such as an LED package. Further, each of the lED wafers having one or more of them is manufactured by cutting the LED package 1A shown in Fig. 2. Further, in addition to the surface 1〇1a of the base resin layer 105 shown in Fig. 2, a convex lens or the like is formed on the base resin layer 1〇5. Further, regarding the thickness of the ceramic substrate 103 and the ruthenium resin layer 105, various values are conceivable by the development of future LED elements. For example, it is considered that the thickness of the ceramic substrate 103 is about 〇3 to 〇 8 mm, and the thickness of the enamel resin layer 1〇5 is several mm or less, which is considered to be 1 mm or less. The LED package 101 is mounted on the support stage 2G1 (ie, including a movable platform or a moving stage) that can move freely along the orthogonal three axes, that is, the x-axis, the γ-axis, and the z-axis, with the back surface 10113 The state in which the close contact is held by the support stage is detachably attached to the support stage 2〇1 by a jig (not shown). Further, in the figure, the x-axis and the z-axis are indicated by arrows, and the surface is perpendicular to the plane of Fig. 1 . Therefore, the LED package ι〇 can be freely moved by moving the support stage such as along the X-axis, the Y-axis, and the z-axis. The device 11 is roughly provided with a first living mechanism 31 (which may include a laser beam source). The device 11 is illuminating the LED package 胄101. Doc 201233475 Laser beam of layer 105, that is, resin cut laser beam L1 (specifically, C〇2 laser beam); second generating mechanism 51 (which may include laser beam source), which is suitable for cutting The laser beam of the ceramic substrate 103 of the LED package 101, that is, the ceramic cut laser beam L2 (specifically, the fiber laser beam); and the observation mechanism 71 (which may include a detector), which observes the LED package 101 Processing (cut) condition. The first generation mechanism 31 includes a resin-cut laser beam generating device 33 which generates a resin-cut laser beam L1 suitable for cutting the resin layer 1〇5, and a mirror 35 which is a reflective resin-cutting device. The resin generated by the laser beam generating device 33 cuts off the laser beam L1; and the mirror driving device 37 drives the mirror 35. The resin cut laser beam L1 generated by the laser beam cutting device 33 is specifically a CO 2 laser beam having a wavelength of about 9 to 11 μm. The point and energy of the laser cutting laser beam L1 vary greatly depending on the processing conditions or the mode of oscillation. For example, it is considered that the dot diameter is about 20 μηι to 1 mm, and the energy is several hundred W. Here, the resin-cut laser beam L1' generated by the resin-cut laser beam generating device 33 advances in the X-axis direction and is reflected by the mirror 35 in the z-axis direction (the direction facing the LED package 101). Further, the resin cut laser beam L1 is focused on the front surface l〇la of the enamel resin layer 105 or the inner portion of the enamel resin layer 105. Here, the term "focusing" in this application refers to cutting the laser beam from the resin at the point of processing in the workpiece. ^ and the diameter of the ceramic cut laser beam L2 are respectively minimized and "driven by the optical mechanism or the support stage 201" to appropriately control the position of the focus in the z-axis direction. 159366. Doc -18- 201233475 In Fig. 1, the relationship between the direction of the rotating mirror 35 and the relative position between the resin cut laser beam L1 and the ceramic cut laser beam L2 is as follows. In Fig. 1, the driving mirror driving device and the rotating mirror 35 are turned in the direction of the reflecting surface 35s of the observable mirror 35 (i.e., the mirror surface is rotated in such a manner as to face the front side, the front side of the LED package 101) In l〇la, the center of the resin cut laser beam L1 moves in the -Y direction with respect to the center of the ceramic cut laser beam L2. In Fig. 1, the driving mirror driving device and the rotating mirror 35 become observable relative The direction of the state on the opposite side of the reflecting surface 35s of the mirror 35 (that is, the mirror surface is rotated so as to face the deep side). In this case, the resin is cut off in the front side l〇1 of the LED package 101 The center of the laser beam L1 moves in the +Y direction with respect to the center of the ceramic cut laser beam L2. If viewed from the side of the LED package 101, the mirror 35 has a second circular shape as viewed in the Z-axis direction. a reflecting surface 35s (concave surface) in which the centers of the first circular shape and the second circular shape are approximately coincident, wherein the second circular system has an opening 35h that looks like a first circular shape; and the opening 35h is described later. Ceramic cut laser beam L2 for LED package 1 The direction of 01 passes. The mirror driving device 3 7 ' is configured to include, for example, a motor, and is capable of freely driving the mirror 35. An example in which the mirror 35 is driven by one axis is shown in Fig. 1. However, it is not limited thereto, and may be utilized. The plurality of shaft drive mirrors 35. The second generation mechanism 51 has a ceramic cut laser beam generating device 53' which generates a ceramic cut laser beam L2 suitable for cutting the ceramic substrate 1〇3 (for example, an optical fiber) a laser beam (optical fiber) 54 that guides the ceramic to cut off the laser-cut laser beam L2 generated by the laser beam generating device 53; the collimator 55 is guided by the optical cable 54. Tao 159366. Doc 19 201233475 Porcelain cuts the optical axis of the laser beam L2 and emits it in parallel; and the collecting lens 57 cuts the laser beam L2 by the ceramic radiated by the collimator 55 in the LED package 1〇1 The front of the i〇ia is refracted by the way of focusing. Here, the term "fiber laser" refers to a type of solid laser, which is a general term for a laser using a fiber as a medium. In fiber lasers, there are CW oscillators and pulse oscillators. The former is mostly used for cutting or melting in the case of high output; the latter is used for microfabrication or marking in low output situations. The general light-dimensional laser beam uses a rare earth-added fiber as an amplifier, and the optical path system is entirely composed of an optical fiber. For example, Yb fiber lasers, Nd-type fiber lasers, and the like are preferably used. Generally, a rare earth-added fiber has a migration line at a plurality of wavelengths of a wavelength of 3 μηι or less; as a Yb fiber laser, a laser beam having a wavelength of about 1 μm can be exemplified, and a parallel light tube 55 is used for parallel radiation. The ceramic cutting laser beam L2' is passed through a second dichroic mirror 77 (the ceramic cutting laser beam L2 is passed) before reaching the collecting lens 57. The laser beam L2 is cut by the ceramic refracted by the condensing lens 57 through the opening 35h of the mirror 35 described above. Further, the Tauman cut laser beam L2 is attached to the front surface 103a of the ceramic substrate 103, or is focused inside the ceramic substrate 1?3. As the ceramic cutting laser beam L2, in addition to the fiber laser beam, for example, a YAG laser beam, a YV〇4 laser or the like can be used. Regarding the case where the fiber laser beam is oscillated using a pulse train, that is, Q-SW, it is considered that the spot diameter is 10 to 100 μm, and the energy is 50 μ«τ~1 J/Puise. Further, as for the fiber laser beam, a continuous wave using continuous oscillation can be used. 159366. Doc • 20- 201233475 The observation mechanism 71 including the detector has: a CCD camera 72; an imaging lens 73 imaged in the CCD camera 72; a band pass filter 74 that only passes light of a wavelength suitable for illumination of a specific range; Illuminating the front surface 101a of the LED package 101 (including the exposed surface including the resin layer 105, the front surface 103a of the ceramic substrate 103, and the exposed surface, etc., etc., the same applies hereinafter). The illumination light from the device 76 passes through the first dichroic mirror 75 that passes the imaging light to the CCD camera 72, and the second dichroic mirror 77 that reflects the visible light and causes the ceramic to cut the laser beam L2. The illumination light from the observation illuminator 76 is reflected by the first dichroic mirror 75 and the second dichroic mirror 77 to illuminate the front surface of the LED package 101. Then, the front side of the illumination light is illuminated by the first beam splitter 75 and the band pass filter 74, and then imaged by the imaging lens 73 to the CCD camera 72. And was observed. Thus, the laser processing can be performed while observing the front surface 101a of the LED package 101 through the CCD camera 72'. Further, an injection nozzle 91 for ejecting an assist gas (for example, oxygen gas or air, etc.) is disposed at a position facing the front surface 1 of the LED package 101. The injection nozzle 91 is a nozzle for injecting an assist gas from the injection port 93, and has a substantially hollow truncated cone shape. The auxiliary gas to be ejected is generated from the LED package 101 when the LED package 1〇1 is irradiated with the resin to cut the laser beam and the ceramic cuts the laser beam L2 to cut the LED package 1〇1. The spray nozzle 91 associated with the undesired object (for example, the melt of the LEd package 1 〇1) is often used in a laser processing apparatus. For example, FIG. 2, which is exemplified in Japanese Patent No. 3789899, can be used. 159366. Doc 21 201233475 4 and the nozzle disclosed in Figure 5 and the like. An auxiliary gas pipe (not shown) is connected to the injection nozzle 91. Further, the assist gas supplied to the injection nozzle 91 is supplied with an assist gas from the auxiliary gas injection port 93 to the front surface 101a of the LED package 101. Further, the auxiliary gas injection port 93 passes through the resin cut laser beam L1 and the ceramic cut laser light beam L2, whereby the resin cut laser beam L1 and the ceramic cut laser beam L2 are irradiated in the LED package. On the front side 101a of the body 101. Since the laser beam is cut by irradiating the laser beam L1 and the ceramic cutting laser beam L2 to the front surface 101a of the LED package 101, the auxiliary gas is injected, so that laser processing (here, cutting) can be effectively performed. 3A-C shows the resin-cut laser beam L1& illuminating the laser-cut laser beam L2 which is irradiated on the front surface of the LED package 101 (here, a plane parallel to the Z-axis in Fig. 1 is formed). FIG. 3A is a view showing the actual illumination state of the resin-cut laser beam L1 and the ceramic-cut laser beam L2 irradiated on the front surface of the LED package 101; FIG. 3B is only FIG. Fig. 3A shows a view in which the resin cuts off the irradiated portion of the laser beam L1; and Fig. 3C shows only the portion shown in Fig. 3A, and the ceramics cut off the irradiated portion of the laser beam L2. Referring to Fig. 3A-C, the irradiation state of the resin-cut laser beam L1 irradiated on the front surface 101a of the LED package 101 and the cut-off laser beam L2 will be described. Further, in Fig. 3A-C, in order to easily understand the irradiation state of the resin cut laser beam L1 and the ceramic cut laser beam L2, hatching is attached to each of the irradiated regions. As shown in Fig. 3B, the resin cut laser beam L1 is irradiated to the radius I of the center C2 of the circle rl of the radius rl of the center C1 of the front surface 101a. Doc -22- 201233475 The area of the circle (the area where the shape of the circle of radius r2 is removed from the circle of radius rl). In other words, the resin-cut laser beam L1 is irradiated in a circular ring shape (hereinafter referred to as a "ring") in a plan view. Further, as shown in Fig. 3C, the ceramic cut laser beam L2 is irradiated to the radius r2 existing at the center C2 of the front surface 1 〇 1 a (however, r2 <rl) The area of the circle. The resin-cut laser beam L1 and the ceramic-cut laser beam L2 are present at the center of the front surface 1〇1 a (:^ and the center C2, and become the one point shown in FIG. 3A, that is, C In a point manner, the concentric illumination is applied to the front surface 101a. Therefore, the width "the width of the region T irradiated with the resin to cut the laser beam L1" is present on the outer side of the region where the ceramic cut laser beam 匕2 is irradiated, and becomes "in any direction". The same (specifically, (rl_r2)). In fact, the resin cuts the laser beam L1' in the inner region of the circle of the radius r2, and also has a small intensity distribution. However, by the mirror 35 The diameter of the opening 35h, the curvature of the reflecting surface 35s, and the resin that affects the reflecting surface 35s cut the laser beam L1, change the size of the irradiated region, etc., thereby making it possible to cut the laser beam L i at least with the ceramic. The state in which one of the irradiation regions of the laser beam L2 is partially overlapped and irradiated is cut. Further, the laser beam is irradiated with the laser beam in the entire region of the region where the ceramic laser beam L2 is irradiated. Body 1 〇1 resin cut laser The bundle l 1 mainly causes the base resin layer 105 to be thermally decomposed, etc., and the 'laser beam L2' which is irradiated to the LED package 1〇1 is used to melt the ceramic substrate 1〇3, etc. The auxiliary gas injection port 93 of the nozzle 91 blows the auxiliary gas injected toward the front surface 1 〇 1 a to blow off and remove the substance generated by thermal decomposition or melting of the LED package 101. Thereby, the processed LED package can be cut. 1 〇 1. 159366.doc -23- 201233475 Fig. 4 is a plan view showing the position where the LED package ι〇 is cut by the device u (displayed from the side of the auxiliary gas injection port 93 of the injection nozzle 91)' Fig. 5 is a cross-sectional view taken along line AA of Fig. 4. Referring to Fig. 4 and Fig. 5, a cutting step of the LED package 1〇1 using the device 11 will be described. As shown in Fig. 3A, the resin cuts the laser beam u and The ceramic cut laser beam L2 is directed to the front surface i〇ia, respectively, to the concentric annular ring and the circle region. Further, in order to cause the LED package 1 〇1 to cut the laser beam L1 and the ceramic with respect to the resin The laser beam L2 is cut, and in FIG. 4 and FIG. 5, it moves in the direction of the arrow , to support the stage 201. Move in this manner. Here, the moving direction (arrow Μ) is the same direction as the above-mentioned Υ axis. On the LED package 1 〇1, the laser beam L1 and the ceramic are cut off from the front side 丨0丨& side illuminating resin. The laser beam L2 is cut. First, the laser beam L1 is cut by the resin to thermally decompose the base resin layer 105. Further, the auxiliary gas injected from the auxiliary gas injection port 93 of the self-injection nozzle 91 to the front surface 1〇1a is used. The ruthenium resin layer 105 which has been thermally decomposed is blown off, whereby the ruthenium resin layer 丨05 is removed. Further, the ruthenium resin layer 1〇5 is removed by cutting the laser beam L1 with a resin to expose the ceramic substrate 103. Next, the ceramic glass 103 is cut and fused by irradiating the exposed substrate 103 with the ceramic laser beam L2. Further, the auxiliary gas ejected from the auxiliary gas injection port 93 of the injection nozzle 91 is used to blow the material generated by the melting of the ceramic substrate 丨〇3. Thereby, the ceramic substrate 103 is removed. As described above, the removal of the resin layer 105 and the ceramic substrate 103 by the laser cutting laser beam L1 and the ceramic cutting laser beam L2 is accompanied by cutting the laser beam L1 and the ceramic cut with respect to the resin by the LED package 101. Broken laser beam 159366.doc •24· 201233475 The movement of the head mm 'Taoman's cut laser beam is irradiated on the [rib package ιοί's track (track). Thereby, the branching groove (9)d of the resin layer 1〇5 formed by cutting the laser beam L1 by the tree wax and the dividing groove 103d of the ceramic substrate 1〇3 formed by the ceramic cutting laser beam L2 are formed. ' The step so far cuts off the LED package 1〇1. Further, the support stage 201 can be appropriately moved along the x-axis and the ¥ axis while maintaining the state of Fig. 3A. Thereby, the LED package 1〇1 can be cut along the curve in plan view. Further, (see Fig. 1) the mirror driving device 37 rotates the mirror 35 at a predetermined angle, thereby changing the laser beam L1 and the ceramic cutting laser beam L2 while irradiating the resin. The ceramic cuts the relative position of the irradiated region of the laser beam L1 by the resin in the irradiation region of the laser beam L2. 6A-6C are diagrams showing the relative positional change of the irradiated laser beam £1 irradiation region with respect to the resin cut-off region of the laser beam L2 by the mirror driving device 37 (displayed as in Fig. 3A) Where the position is observed). Fig. 6B shows the same state as Fig. 3A; specifically, the resin cut laser beam L1 and the ceramic cut laser beam [2] are concentrically irradiated such that the center C1 and the center C2 become the same point C. The state in which the mirror driving means 37 and the forward rotating mirror 35 are driven from the state of Fig. 6B is shown in Fig. 6A. Compared with the state of FIG. 6B, the center C1 of the resin cut laser beam L1 is reversely moved with respect to the moving direction (arrow Μ direction) of the LED package 101 as compared with the center C2 of the laser beam L2. With. Thus, by eccentrically centering the two centers C1 and C2, the resin before the LED package body 101 reaches the irradiation region of the ceramic cutting laser beam L2 can be increased as compared with the case of fixing the state of FIG. 6 159 366.doc -25 - 201233475 and irradiating. The irradiation time of the laser beam L1 is cut off. The state in which the mirror driving device 37 is driven from the state of Fig. 6B and the mirror 35 is rotated in the reverse direction (in the opposite direction to Fig. 6A) is shown in Fig. 6C. Compared with the state of FIG. 6B, the center C1 of the resin cut laser beam L1 is in the same direction with respect to the moving direction (arrow Μ direction) of the LED package 101 as compared with the center C2 of the ceramic cut laser beam L2. Moving. Thus, by causing the two centers ci, C2 to be eccentrically compared to the state of the fixed figure 6 照射, the lED package body 101 can be reduced to reach the ceramic cut laser beam. The resin before the irradiation area cuts the irradiation time of the laser beam L1. By moving the center C1 of the resin cut laser beam L1 in the order of FIG. 6B - FIG. 6A - FIG. 6B - FIG. 6C - FIG. 6B, the resin can be scanned in the Y-axis direction in the irradiation region of the ceramic cut laser beam L2. The laser beam L1 is cut off. By repeating this scanning, it is possible to periodically irradiate the LED package 101, which is a workpiece, with the resin to cut off the laser beam L1#. Therefore, it is possible to irradiate the LED package with low energy for a long time with respect to the manner in which the resin cut laser beam L1' is irradiated with high energy for a short time. Therefore, it is possible to suppress damage (heat influence) caused by the resin cutting laser light beam L1 to the ceramic substrate 1〇3. Therefore, the level of the cut portion can be raised. χ, in the if shape of the scanning resin cut laser beam L1, 'the auxiliary gas injection port 93 can be made into the flat direction D in the scanning direction and the 'irradiated area of the laser beam L2 is cut off, so that the resin cuts the thunder. In the case where the beam L1 is towed, it is preferable to rotate (rotate) the support stage 2〇1 shown in the circle 1 159366.doc • 26- 201233475.益+ -r 丄 „ 丄 可 可 可 可 可 可 可 可 可 可 可 可 可 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽The θ direction is suitable for rotating (rotating) the support stage 201' such that the wiring direction of the curved portion of the irradiated portion and the scanning direction of the resin cut laser beam L1 are obtained. Thereby, the portion from which the broken resin layer 105 is removed can be maintained. It is also possible to cut the LED package 1〇1 in the state of Fig. 6Α. By this, the right side can be used to cut the laser beam with ceramics. The time during which the laser beam u is irradiated is cut by the resin. Therefore, the resin layer 105 can be more reliably removed before the laser beam L2 is cut by the irradiation of the ceramics, thereby increasing the level of the portion to be cut. The process of completely cutting the workpiece and the LED package 1〇1 (full cut) has been described. However, the present invention is not limited thereto, and the present invention is also applicable to the process in the thickness direction (thickness) Half of the degree) processing to form a groove (half cut) Further, the present invention is also applicable to processing for forming shallow grooves, processing for forming through-holes, processing for forming non-perforations, processing for forming flat openings, etc. Here, as a workpiece, an LED package is used. 1 is an example. The LED package 101 has a flat ceramic substrate 1〇3, an LED wafer (not shown) regularly arranged on the front surface 103a of the ceramic substrate 103, and a seal (resin seal). The tantalum resin layer 1〇5 of each of the LED chips formed so as to be in close contact with the front surface 1〇3a of the ceramic substrate 1〇3. The device is used as the lED for cutting the LED package body 101 into individual pieces. The device of the device is used. Therefore, in the device 11, in order to prevent the injection nozzle 91 from interfering (abutting) to the package 159366.doc • 27-201233475 The ridge of the LED chip portion included in the LED package 101 (the lens of the LED element)咼 degree), the distance between the tip of the injection nozzle 喷射 for jetting the auxiliary gas (the surface of the opening of the auxiliary gas injection port 93) and the workpiece (LED package 1〇1) (nozzle height) can be set to be Included in the LED package ι〇ι The height of the part (for example, 1 〇 to 15 mm) is large (for example, more than 15 mm). Here, the LED package 1〇1 is described as an example of the workpiece, but it is needless to say that it is not limited. In the LED package 101; here, there are two layers of the ceramic substrate 103 and the resin layer 105, but it is not limited to such two layers, and may be two layers, three layers, four layers, and The processing of the plurality of layers is performed in a five-layer manner. As described above, the device is formed by the first layer (the resin layer 105) including the front surface 1〇1 & and the first layer A workpiece (LED package 101) in which the second layer (ceramic substrate 1〇3) on the back side of the resin layer 1〇5 is irradiated with a laser beam from the front surface 101a side (resin cut laser beam) A laser processing apparatus for processing a workpiece (LED package 1 〇1) by cutting a laser beam L2), and an irradiation mechanism (which includes the first step of cutting the laser beam L1 by the irradiation resin) The generating mechanism 31 and the second generating mechanism 51 that illuminates the ceramic to cut the laser beam L2 are formed. ), which irradiates the laser beam (resin cut laser beam L1 and ceramic cut laser beam L2); and moving mechanism (here, branch stage 201), which is to be processed (LED package) The body 101) relatively moves the irradiation mechanism (the first generation mechanism 3 1 and the second generation mechanism 5 1 ) along the front surface 101 a of the workpiece (the LED package 101 ); and the illumination mechanism (the first generation mechanism 31 and the second The generating mechanism 51) has a second irradiation mechanism (second generation mechanism 51) which is in the front of the first layer (the resin layer 1〇5), which is 159366.doc 28 · 201233475 2 (Fig. 3C) Irradiating a second laser beam (ceramic cutting laser beam L2) suitable for processing of the second layer (ceramic substrate 103); and a first irradiation mechanism (first generating mechanism 31) that surrounds the second region (Fig. In the first region (Fig. 3B) of 3C), the second laser beam (resin cut laser beam L1) suitable for the processing of the first layer (the resin layer 105) is irradiated. Further, the melting temperature of the first layer (the resin layer 105) is lower than the melting temperature of the second layer (Taumman substrate 103). Further, in the device, it is preferable that the first laser beam is absorbed by the first layer and is processed without substantially reaching the condition of the second layer. If the first laser beam is not completely absorbed by the first layer and reaches the second layer, the temperature of the second layer is unexpectedly increased, and the first layer is heated by the second layer to cause the first layer to melt or deteriorate. A situation that causes the processing accuracy of the workpiece to decrease or deteriorate. In the device 11, in the first region (Fig. 3B), a single first region existing on the outer side of the second region (Fig. 3C) is present in the region where the irradiation resin cuts the laser beam L1 in Fig. 3A. The width of the donut-shaped portion on the outer side of the region where the ceramic beam cuts the laser beam 匕2 is substantially equal in any direction along the front surface 101a of the workpiece (LED package 101) (here (rl _) R2)). In the device 11, the outer edge line of the first region (Fig. 3B) (the circumference of the radius rl of the center C1) and the outer edge line of the second region (Fig. 3C) (the circumference of the radius r2 of the center C2) are formed. It is a concentric circle centered at the same point on the front side of the first layer (the resin layer 105) (point C in FIG. 3), and is in the case of the two outer edges (the center c丨 and the center C2 are coincident at the point C). The first laser beam (resin cut laser light L1) is irradiated over the entire area between the circumference of the radius rl of the center C1 and the circumference of the radius r2 of the center c2. 159366.doc -29- 201233475 In the present device 11, the first region (Fig. 3B) and the second region (Fig. 3C) may be overlapped with each other. The apparatus 11 further includes an injection nozzle 91 for jetting an auxiliary gas sprayed on the workpiece (the LED package 101), and a second laser beam (resin cut laser beam L1) and a second mine. The light beam (ceramic cut laser beam L2) is irradiated onto the workpiece (LED package 101) by the auxiliary gas injection port % of the injection nozzle 91. In the device 11, the irradiation means (the first generation means 31 and the second generation means 5 1) can illuminate the first laser beam (the resin cuts the laser beam [1) and the second laser beam (ceramic cut) When the laser beam L2 is broken, the relative position with respect to the first region (Fig. 3B) of the second region (Fig. 3C) is changed. In the apparatus 11, the 'illumination means (the first generation means 31 and the second generation means 51) have a passage opening (opening 35h) for the first laser beam (the resin cut laser beam L1) and the second A beam of light along the specific optical path (here, the optical path along the Z direction) in the laser beam (ceramic cut laser beam L2) (here, the second laser beam (ceramic cut laser beam L2) Passing through; and having a mirror 35, which is reflected in a direction different from the optical path (here, the optical path in the Z direction) along the optical path (here, the optical path in the z direction) (here) The X-direction) is the beam of either side of the incident (here, the ninth laser beam (resin cut laser beam L1)). In the device 11, the first laser beam (the resin-cut laser beam L1) is the other beam, and the reflection surface 35s of the mirror 35 is displaced relative to the optical path (the optical path in the Z direction). , while illuminating the second laser beam (resin cutting laser beam L1) and the second laser beam (Taumman cutting laser 159366.doc • 30* 201233475 beam L2) ' while changing relative to the second The relative position of the first region (the irradiation region of the resin-cut laser beam L1) in the region (the region where the ceramic cut laser beam L2 is irradiated) (here, the mirror 35 is driven by the mirror driving device 37). In the device 11, a light beam generating mechanism that emits one of the light beams (here, the second laser beam (the Tauman cuts the laser beam L2)) (here, the second irradiation mechanism (the second generating mechanism 51) a condensing lens 57 that refracts the light beam passing through the above-mentioned passage opening (opening 35h) (here, the second laser beam (ceramic cutting laser beam L2); The light collecting lens 57 absorbs the ratio of the light beam of the one side (here, the second laser beam (the ceramic beam cuts the laser beam L2), and the collecting lens 57 absorbs the light beam of the other side (here, the first 1 The ratio of the laser beam (resin cutting laser beam Li) is large. In the device 11, the first layer (the resin layer 105) is formed of a resin material (矽树月曰), the first laser beam ( The resin cut laser beam L1) is the other light beam. In the device 11, the other light beam (here, the third laser beam (resin cut laser beam L1)) does not pass through the lens (only FIG. 7, FIG. 8A and FIG. 8B show other aspects of the present invention. The conceptual cross-sectional view of the laser processing apparatus (the present apparatus) 11 of the embodiment is basically the same as that of the laser processing apparatus 11 of the consistent embodiment shown in Fig. 1 and the like, and the description thereof is omitted. The device 11 includes: a second generation mechanism 51 that illuminates the laser beam to cut the laser beam; the second generation mechanism 51 that illuminates the laser beam L2; and observes [ED package 1〇1 It
159366.doc •3N 201233475 加工狀況之觀察機構71。第1產生機構31係具有：產生樹 脂切斷雷射光束L1之樹脂切斷雷射光束產生裝置33;反射 樹脂切斷雷射光束L1之第3分光鏡35t;及進而反射並聚光 該反射之樹脂切斷雷射光束L1之反射鏡3 5w;且該等之第 3分光鏡35t及反射鏡35w，係利用各個之鏡面驅動裝置35v 及鏡驅動裝置37a而驅動。 樹脂切斷雷射光束產生裝置33所產生之樹脂切斷雷射光 束L1係沿X軸方向前進’利用第3分光鏡35t向z軸方向（遠 離LED封裝體1〇1之方向）一次反射’進而利用反射鏡35w 向Z軸方向（面向LED封裝體1〇1之方向）反射。又，樹脂切 斷雷射光束L1 ’係於石夕樹脂層1〇5(參照圖2)之正面l〇la、 或矽樹脂層1 05之内部聚焦。此處，樹脂切斷雷射光束 L1 ’係於矽樹脂層1 〇5之正面10丨a，顯示甜甜圈狀之中央 開口之聚光之光輪；陶瓷切斷雷射光束L2，係顯示聚光成 較該光輪之外周小之圓形之光點。此乃由於在第3分光鏡 35t及反射鏡35w之中央部存在開口（孔）；且未存在沿中心 線之雷射光束；及未以反射鏡35w之甜甜圈狀之反射面 35y，於沿中心線之一點上聚光之緣故。陶瓷切斷雷射光 束L2，係利用聚光透鏡57，以於陶瓷基板1〇3之正面 103a(參照圖2)或於該陶瓷基板丨〇3之内部，以可獲得最小 之點徑之方式聚焦。該實施形態中，樹脂切斷雷射光束li 之矽樹脂層105之正面1〇la之甜甜圈狀之中央開口之光 輪，即使於矽樹脂層105之内部，亦並非聚焦於所謂丨點。 即，即使被稱作如所謂動作距離之從該等之反射鏡35w與 159366.doc •32· 201233475 被加工物101之間之距離變長’自靠近反射鏡35w之放射面 3 5y之中心之處反射之雷射光束，係相較於使自靠近反射 鏡3 5w之反射面3 5y之外周之處反射之雷射光束相交於1 點’以於較長之動作距離之位置相交於1點之方式調整其 反射面35y之角度。因此，沿中心線之中心部，係陶兗切 斷雷射光束L2完全集中，可於利用周圍之甜甜圈狀之樹脂 切斷雷射光束L1除去矽樹脂層1〇5(參照圖2)後之處，有效 進行陶瓷之雷射加工。 又’與圖1之一實施形態之雷射加工裝置相同地，可驅 動如圖6A至圖6C之反射鏡，相同地使用反射鏡35w之鏡驅 動裝置37a。另一方面，第3分光鏡3 5t之鏡面驅動裝置 35v ’係以向Z軸方向平行反射來自樹脂切斷雷射光束產生 裝置33之雷射光束L1之方式，調整第3分光鏡35t。圖8A之 下方之圖’係顯示自Z軸方向（自箭頭D)觀察反射鏡35w的 所謂平面圖。圖8B之上方之圖及上方之第2圖係各個顯示 有自Z軸方向（自箭頭B)觀察第3分光鏡35t的所謂平面圖、 及面向第3分光鏡35t之放射面，自垂直方向（自箭頭C)觀察 之圖。自該等之圖可知，平面圖中，於反射鏡35w之中央 上晝同心圓有開口 35x，可使通過聚光透鏡57之陶瓷切斷 雷射光束L2進一步通過。又，第3分光鏡35t中，於Z軸方 向之平面圖上’有大致同心圓狀之開口 35u ;相同地，可 使通過聚光透鏡57及反射鏡3 5w之陶瓷切斷雷射光束L2進 一步通過’使照射被加工物變得可能。上述平面圖中該開 口 3 5u為圓形’但實際之第3分光鏡35為橢圓形，且其中開 159366.doc -33· 201233475 著同樣之橢圓形。若為如該等之構成，期待利用反射鏡 35w之驅動之自圖6A到圖6C之調整更加容易。 圖9係顯示本發明之實施形態之雷射加工裝置之控制構 成。自該圖可知，被加工物或裝置被設定於特定之位置， 自初期值輸入裝置302向控制裝置輸入初期值，根據外部 輸入裝置306之操作，控制裝置31〇中生成命令，藉此，指 令傳達到雷射振盪與驅動裝置（雷射振盪裝置及驅動裝 置）322内，接著指令一併傳達到包含反射鏡等之驅動裝置 之各種之動作部之驅動裝置324 ’進而，指令傳達到保持 被加工物之支撐載物台之驅動裝置326，而適宜地加工被 加工物。進而，自監視器及CCD照相機等輸入檢測信號， 藉此根據特定之程式，控制裝置3 10控制雷射振盪與驅動 裝置322、反射鏡等之驅動裝置324、及被加工物之驅動裝 置 326。 【圖式簡單說明】 圖1係顯示本發明之一實施形態之雷射加工裝置（本裝 置）的概念剖面圖。 圖2係顯示本裝置加工之led封裝體（被加工物）之剖面的 剖面圖。 圖3 Α係顯示照射於LED封裝體之正面之樹脂切斷雷射光 束L1及陶瓷切斷雷射光束L2之照射狀態的圖。 圖3B係顯示照射於LED封裝體之正面之樹脂切斷雷射光 束L1及陶瓷切斷之雷射光束L2之照射狀態的圖。 圖3C係顯示照射於LED封裝體之正面之樹脂切斷雷射光 159366.doc •34- 201233475 束L1及陶瓷切斷雷射光束L2之照射狀態的圖。 圖4係顯示藉由本裝置切斷LED封裝體之處的平面圖（顯 示自喷射噴嘴之輔助氣體噴射口側觀察到之處）。 圖5係圖4之A-A剖面圖。 圖6A係說明相對於利用鏡驅動裝置之陶瓷切斷雷射光束 L2照射區域之樹脂切斷雷射光束L1照射區域之相對位置變 化的圖。 圖6B係說明相對於利用鏡驅動裝置之陶瓷切斷之雷射光 束L2照射區域之樹脂切斷雷射光束L1照射區域之相對位置 變化的圖。 圖6C係說明相對於利用鏡驅動裝置之陶瓷切斷雷射光束 L 2照射區域之樹脂切斷雷射光束L1照射區域之相對位置變 化的圖。 圖7係顯示本發明之其他之實施形態之雷射加工裝置（本 裝置）的概念剖面圖。 圖8A係關於圖7之反射鏡，可自箭頭D角度（自下方）觀察 到的底面圖。 圖8B係關於圖7之第3分光鏡’可自箭頭角度b及c(自上 方及自與反射面垂直之方向）觀察到的平面圖及箭頭角度c 圖。 圖9係顯示本發明之實施形態中雷射加工裝置之控制構 成的概略圖。 【主要元件符號說明】 11 本裝置 159366.doc -35- 201233475 31 第1產生機構 33 樹脂切斷雷射產生裝置 35 反射鏡 35h 開口 35s 反射面 35t 第3分光鏡 3 5u 開口 35v 鏡面驅動裝置 3 5 w 反射鏡 35x 開口 35y 反射面 37 鏡驅動裝置 37a 鏡驅動裝置 51 第2產生機構 53 陶瓷切斷雷射光束產生裝置 54 光導電纜 55 平行光管 57 聚光透鏡 71 觀察機構 72 CCD照相機 73 成像透鏡 74 帶通濾波器 75 第1分光鏡 76 觀察用照明器 159366.doc -36- 201233475 77 第2分光鏡 91 喷射噴嘴 93 輔助氣體喷射口 101 LED封裝 101a 正面 101b 背面 103 陶瓷基板 103a 正面 103d 分斷溝 105 >5夕樹脂層 105d 分斷溝 201 支撐載物台 LI 樹脂切斷雷射光束 L2 陶瓷切斷雷射光束 159366.doc -37-159366.doc • 3N 201233475 Observing mechanism 71 for processing conditions. The first generation mechanism 31 includes a resin-cut laser beam generating device 33 that generates a resin-cut laser beam L1, and a third beam splitter 35t that reflects the laser beam L1 by the reflective resin; and further reflects and concentrates the reflection. The resin cuts the mirror 35b of the laser beam L1; and the third beam splitter 35t and the mirror 35w are driven by the respective mirror driving device 35v and the mirror driving device 37a. The resin-cut laser beam L1 generated by the resin-cut laser beam generating device 33 advances in the X-axis direction. 'The first beam splitter 35t is reflected once in the z-axis direction (in the direction away from the LED package 1〇1). Further, it is reflected by the mirror 35w in the Z-axis direction (direction facing the LED package 1〇1). Further, the resin-cut laser beam L1' is focused on the front side of the lithium resin layer 1〇5 (see Fig. 2) or the inner layer of the enamel resin layer 105. Here, the resin cut laser beam L1' is attached to the front surface 10丨a of the base resin layer 1 〇5, and shows a donut-shaped central opening concentrating light wheel; the ceramic cut laser light beam L2 is a poly The light becomes a small light spot smaller than the circumference of the light wheel. This is because there are openings (holes) in the central portion of the third beam splitter 35t and the mirror 35w; and there is no laser beam along the center line; and the donut-shaped reflecting surface 35y which is not mirrored 35w, The reason for collecting light along one of the center lines. The ceramic cut laser beam L2 is formed by using a collecting lens 57 on the front surface 103a of the ceramic substrate 1 (see FIG. 2) or inside the ceramic substrate 3 to obtain a minimum spot diameter. Focus. In this embodiment, the resin-cut center wheel of the front side of the resin layer 105 of the laser beam ra, which is in the form of a donut, is not focused on the so-called defect even inside the resin layer 105. That is, even if it is called the so-called action distance, the distance between the mirrors 35w and 159366.doc • 32·201233475 is increased by the distance from the center of the radiating surface 35y near the mirror 35w. The reflected laser beam is intersected at a point 1 at a point where the laser beam reflected from the periphery of the reflecting surface 35y near the mirror 3 5w intersects at 1 o'clock. The angle of the reflecting surface 35y is adjusted in a manner. Therefore, along the center line of the center line, the laser beam L2 is completely concentrated, and the laser beam L1 can be removed by using the surrounding doughnut-shaped resin to remove the resin layer 1〇5 (refer to FIG. 2). After that, the laser processing of ceramics is effectively performed. Further, similarly to the laser processing apparatus of the embodiment of Fig. 1, the mirrors of Figs. 6A to 6C can be driven, and the mirror driving device 37a of the mirror 35w is used in the same manner. On the other hand, the mirror driving device 35v' of the third dichroic mirror 35t adjusts the third dichroic mirror 35t so that the laser beam L1 from the resin-cut laser beam generating device 33 is reflected in parallel in the Z-axis direction. The lower view of Fig. 8A shows a so-called plan view of the mirror 35w viewed from the Z-axis direction (from the arrow D). The upper view of FIG. 8B and the second figure above are each showing a so-called plan view of the third beam splitter 35t viewed from the Z-axis direction (from the arrow B) and a radiating surface facing the third beam splitter 35t from the vertical direction ( View from arrow C). As can be seen from the figures, in the plan view, an opening 35x is concentrically formed in the center of the mirror 35w, and the laser beam L2 cut by the condensing lens 57 can be further passed. Further, in the third dichroic mirror 35t, the opening 35u having a substantially concentric shape is formed on the plan view in the Z-axis direction. Similarly, the laser beam L2 can be further cut by the ceramic of the collecting lens 57 and the mirror 35w. By 'illuminating the workpiece becomes possible. The opening 3 5u is circular in the above plan view, but the actual third beam splitter 35 is elliptical, and the same elliptical shape is opened in the opening 159366.doc -33·201233475. In the case of such a configuration, it is expected that the adjustment from Fig. 6A to Fig. 6C by the driving of the mirror 35w is easier. Fig. 9 is a view showing the control structure of a laser processing apparatus according to an embodiment of the present invention. As can be seen from the figure, the workpiece or the device is set at a specific position, and the initial value is input from the initial value input device 302 to the control device, and the control device 31 generates a command based on the operation of the external input device 306. It is transmitted to the laser oscillation and driving device (laser oscillating device and driving device) 322, and then transmitted to the driving device 324' of various operating units including the driving device such as a mirror, and the command is transmitted to the holding device. The workpiece 326 of the workpiece is supported to process the workpiece. Further, a detection signal is input from a monitor, a CCD camera or the like, whereby the control device 3 10 controls the laser oscillation and driving device 322, the driving device 324 such as a mirror, and the workpiece driving device 326 according to a specific program. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a conceptual cross-sectional view showing a laser processing apparatus (this apparatus) according to an embodiment of the present invention. Fig. 2 is a cross-sectional view showing a cross section of a led package (processed object) processed by the apparatus. Fig. 3 is a view showing the irradiation state of the resin-cut laser beam L1 and the ceramic-cut laser beam L2 which are irradiated on the front surface of the LED package. Fig. 3B is a view showing an irradiation state of the resin cut laser beam L1 and the ceramic cut laser beam L2 which are irradiated on the front surface of the LED package. Fig. 3C is a view showing a state in which the laser light is irradiated on the front surface of the LED package to cut off the laser light 159366.doc • 34- 201233475 The beam L1 and the ceramic cut laser beam L2 are irradiated. Fig. 4 is a plan view showing the position where the LED package is cut by the apparatus (showing the side of the auxiliary gas ejection port from the ejection nozzle). Figure 5 is a cross-sectional view taken along line A-A of Figure 4. Fig. 6A is a view for explaining a change in the relative position of the region where the laser beam L1 is irradiated with respect to the region where the laser beam L2 is irradiated with the mirror driving device. Fig. 6B is a view for explaining a change in the relative position of the region of the laser beam L1 irradiated with respect to the resin irradiated region of the laser beam L2 cut by the mirror driving device. Fig. 6C is a view for explaining a change in the relative position of the region where the laser beam L1 is irradiated with respect to the region where the laser beam L 2 is irradiated with the mirror driving device. Fig. 7 is a conceptual cross-sectional view showing a laser processing apparatus (the present apparatus) according to another embodiment of the present invention. Fig. 8A is a bottom view of the mirror of Fig. 7 as viewed from the arrow D angle (from below). Fig. 8B is a plan view and an arrow angle c diagram of the third beam splitter ' of Fig. 7 as viewed from the arrow angles b and c (from the upper side and from the direction perpendicular to the reflecting surface). Fig. 9 is a schematic view showing the control structure of the laser processing apparatus in the embodiment of the present invention. [Main component symbol description] 11 This device 159366.doc -35- 201233475 31 1st generation mechanism 33 Resin cut laser generating device 35 Mirror 35h Opening 35s Reflecting surface 35t 3rd beam splitter 3 5u Opening 35v Mirror driving device 3 5 w Mirror 35x Opening 35y Reflecting surface 37 Mirror driving device 37a Mirror driving device 51 Second generating mechanism 53 Ceramic cutting laser beam generating device 54 Optical cable 55 Parallel light tube 57 Condenser lens 71 Observation mechanism 72 CCD camera 73 Imaging Lens 74 Bandpass filter 75 1st beam splitter 76 illuminator for observation 159366.doc -36- 201233475 77 2nd beam splitter 91 injection nozzle 93 auxiliary gas injection port 101 LED package 101a front side 101b back side 103 ceramic substrate 103a front side 103d Broken groove 105 > 5 eve resin layer 105d breaking groove 201 supporting stage LI resin cutting laser beam L2 ceramic cutting laser beam 159366.doc -37-