TW201232988A - A self powered feed forward charging circuit and design methodology for the protection of electrical energy storage devices - Google Patents
A self powered feed forward charging circuit and design methodology for the protection of electrical energy storage devices Download PDFInfo
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201232988 六、發明說明: 【發明所屬之技術領域】 本發明提供一種超級電容之充電設計方法,特別地,本 發明提出一種前饋充電方法對如超級電容此類型的儲能元 件之充電技術加以改進,具有低成本,結構簡單的持性。 【先前技術】 為人所熟知地,電容器在電子電機系統中有許多種用途。 以能量儲存而論 當電容器和其充電線路分離後,電容器會儲存能量,因 此可作為電池,提供短時間的電力。電容器常用在配合電池 使用的電子設備中,在更換電池時提供電力,避免儲存的資 料因沒有電力而、;肖失。電容ϋ也相在電源供應器中,可緩 和全橋或或半橋整流器的輸出。電容器也可用在電容泵浦 (ChargePump)電路中,儲存能量,以產生比輸入電壓更高 電壓。 而一種超級電容(有時也被稱為電力二重層電容器 (Electrochemical Double Layer Capacitor (EDLC))或雙電層電 容器),是-讎有高能量密度的電化學電容器,比一般的電 • 解電容器容量高上千倍。所衍生消費者產品應用為: 作為在 數位相機内具快照功驗置、可攜式媒或太陽能裝置之 充電電源等。 目前產業界相的超級電容充電方法有三種方法:其中: 方法(a):用定電流充電至操作電壓,再用定電壓充電。方法⑼: 用充電至操作電_近,轉換成定功率充電,再用定 電壓充電。方法:(c)電壓充電。 刖述兩種方法(物方法(b)需要健檢.電流檢測,結 構複雜,成本較高’較適合高單價高功率的設備。方法 201232988 ⑹雖然結構簡單,但當超級電容電壓超過輸人賴時即無法 充電’故鱗不佳’且無法滿足賴最大電流或最大容^操 作溫度之要求,會影響超級電容的使用壽命。 因此’、如能提供一種對於如超級電容此類型的儲能元件 之充電方法及其充電設計電路應是迫切需要的。 【發明内容】 在超級電容的充電過程中,充電器的電壓及電流必須保 持在電容容許的最大電壓及最大電流或最大容許操作溫度 之下’故產業界通常制定電流充電,繼之以定電壓充電, ⑩,則定,流充電,繼之蚊功率和定電壓充電,或只採用簡 單的電壓充電。因此,本發明針對如超級電容此類型的電子 儲能裝置而提供-種自供電前饋充電電路及設計方法。其與 習知技術的區珊徵在於:本隸出—種前饋充電方法及電 路來達成與則述各充電法一樣的設計目標,完成一個簡單, 低成本的超級電谷充電技術。並針對現存的超級電容提出一 個理論上的充電設計方法以計算前饋充電器的電路參數。此 外,本技術也提出兩種自供電電路,使本充電系統可在無外 加電源的狀況下完成充電。 Φ —而本案所提出的自供電前饋充電電路及設計方法對於進 行充電一般的電容器,亦不會影響到該電容器的使用壽命。 根據本發明之一目的,本發明提供一種儲能電路之充電 法’該儲能電路包含多個預設值,包括: 旦(a)藉由使用一自供充電電路來接收一第一電能之部分能 供應一前饋昇壓充電電路所需啟動電能;以及(b)於該前 _^幵塵充電電路被啟動後,該前饋昇壓充電電路以一前饋方 ^對該儲能電路充電,同時所充電賴及電流不會超過該儲 =電路之該等預設值,及對該自供充電電路進行能量轉移並 透過該自供充電電路提供一第二電能至該前饋昇壓充電電 201232988 路。 根據本發明之又一目的,本發明提供一種自供電 電電路’包含:—自供充電電路’儲存—第—電能之部 量;一前饋昇壓充電電路,接收來自該自供充電電路之該^ 一電能之部分能量而被啟動;以及一儲能電路,含—超= 容及一保護電路,該前饋昇壓充電電路以一前饋方式對該 能電路充電’同時該前麟壓充電電路啟動該保護電路,/且 該保護電路限制該超級電容之一最大瞬間電流或最大 溫度及一最大電壓於一預設值内。 ’、 【實施方式】 該超級電容的應用方向將會隨著單位體積的儲存容量增 力口而大為舰。目前的充電方法包含適合高端產絲用(如 車、太陽能、電源等)或適合低端產品應用(如玩且、緊叁昭 =等)的技術。這些設計从結構難,成錢高(指高二 =)’就是效率不佳,且無法滿足瞬間最大電流(或最大容許 操作溫度)之要求,會影響超級電容的使用壽命(指低端而 言)。 〜因此,如第1圖所示,該圖為本案根據習知超級電容進 行充電時所衍生的缺陋而提出一種自供電前饋充電電路j。 其中該自供電前饋充電電路1包含三個電路,分別是一自供 充電電路11、一前饋昇壓充電電路丨2及一儲能電路13。其 中,如第2圖所示:對於各電路η、12及13内較詳細的電子 元件連接關係為:該自供充電電路11包含一第一二極體D1、 一第極體02、一第一電容C卜一第二電容C2、一第四 電阻R4及與該第二電容C2並聯之具有穩定電壓功能之一齊 納二極體Z1。 該前饋昇壓充電電路12包含一第一電阻R1、一第二電阻 ^2、一第二電阻R3、一電感L ' 一第一切換開關s卜一第 201232988 二二極體D3及-比較器CM卜該儲能電路13包含一超 電容sci及包含一第二切換開_ S2及其串聯接的 阻R5之一保護電路π卜 其中’本案之第一切換開關S1係以N型金屬氧化物半導 體%效電晶體,簡稱NMOSFET為實施範例,而對於以 NMOSFET為第-切換關S1之各端闕連練詳細的說 明為:該第一切換開關S1之一源極s(s〇urceTerminal)耦接於一 接地端、該第一切換開關S1之一汲極D(Drain Tenninal)耦接 於形成在該電感L及該第三二極體D3之間的一接點以及 该第一切換開關S1之一閘極G(Gate Terminal)耦接於該比較器 CM1之一輸出端。201232988 VI. Description of the Invention: [Technical Field] The present invention provides a charging design method for a super capacitor. In particular, the present invention provides a feedforward charging method for improving the charging technique of an energy storage element such as a super capacitor. , with low cost and simple structure. [Prior Art] Capacitors are well known in the electronic motor system for many purposes. In terms of energy storage, when the capacitor is separated from its charging line, the capacitor stores energy, so it can be used as a battery to provide short-term power. Capacitors are commonly used in electronic devices that are used in conjunction with batteries to provide power when replacing batteries, to avoid storing materials that are not powered. The capacitor ϋ is also in the power supply and can alleviate the output of the full-bridge or half-bridge rectifier. Capacitors can also be used in a capacitance pump circuit to store energy to produce a higher voltage than the input voltage. A supercapacitor (sometimes called an Electrochemical Double Layer Capacitor (EDLC) or an electric double layer capacitor) is an electrochemical capacitor with a high energy density than a typical electrical capacitor. The capacity is thousands of times higher. Derived consumer products are used as: charging power for snapshots, portable media or solar devices in digital cameras. At present, there are three methods for supercapacitor charging methods in the industrial phase: Among them: Method (a): charging with a constant current to the operating voltage, and then charging with a constant voltage. Method (9): Charge to the operating power _ near, convert to constant power charging, and then charge with a constant voltage. Method: (c) Voltage charging. Describing two methods (physical method (b) requires health check. Current detection, complex structure, high cost' is more suitable for high unit price and high power equipment. Method 201232988 (6) Although the structure is simple, when the super capacitor voltage exceeds the input When it is unable to charge 'the bad scales' and can not meet the requirements of the maximum current or the maximum operating temperature, it will affect the service life of the supercapacitor. Therefore, if you can provide an energy storage component such as a super capacitor The charging method and its charging design circuit should be urgently needed. [Invention] During the charging process of the super capacitor, the voltage and current of the charger must be kept below the maximum allowable voltage and maximum current or maximum allowable operating temperature of the capacitor. 'Therefore the industry usually develops current charging, followed by constant voltage charging, 10, then, current charging, followed by mosquito power and constant voltage charging, or only using simple voltage charging. Therefore, the present invention is directed to such a type as a super capacitor. A self-powered feedforward charging circuit and a design method are provided by the electronic energy storage device, which is in accordance with the conventional technology. Yu: This is a kind of feedforward charging method and circuit to achieve the same design goal as the charging method described above, complete a simple, low-cost super electric valley charging technology, and propose a theoretical solution for the existing super capacitor. The charging design method is used to calculate the circuit parameters of the feedforward charger. In addition, the present technology also proposes two self-powered circuits, so that the charging system can be charged without an external power supply. Φ - and before the self-power supply proposed in the present case The feed charging circuit and the design method do not affect the service life of the capacitor for charging. In accordance with one aspect of the present invention, the present invention provides a charging method for a tank circuit, which includes a plurality of pre-charges. The set value includes: (a) a portion of the first electrical energy received by using a self-charging circuit to supply a start-up boost charging circuit required to start the electrical energy; and (b) the front _^ dust charging After the circuit is started, the feedforward boost charging circuit charges the energy storage circuit with a feedforward side, and the charged current does not exceed the storage circuit. a preset value, and energy transfer from the self-charging circuit and providing a second power to the feedforward boost charging power through the self-charging circuit 201232988. According to still another object of the present invention, the present invention provides a self-powered electric circuit 'Includes: - self-supply charging circuit 'storage - the first part of the electric energy; a feedforward boost charging circuit that receives a portion of the energy from the self-charging circuit and is activated; and a storage circuit, including - super = a protection circuit, the feedforward boost charging circuit charges the energy circuit in a feedforward manner - while the front voltage charging circuit activates the protection circuit, and the protection circuit limits one of the super capacitors The maximum instantaneous current or maximum temperature and a maximum voltage are within a preset value. ', [Embodiment] The application direction of the super capacitor will be greatly increased with the storage capacity per unit volume. Current charging methods include technologies suitable for high-end yarn production (such as cars, solar power, power supplies, etc.) or for low-end product applications (such as playing, tight, etc.). These designs are difficult to structure, and the high cost (referred to as high 2 =) is the inefficiency, and can not meet the requirements of instantaneous maximum current (or maximum allowable operating temperature), which will affect the service life of supercapacitors (referring to the low end) . ~ Therefore, as shown in Fig. 1, the figure proposes a self-powered feedforward charging circuit j which is derived from the conventional supercapacitor charging. The self-powered feedforward charging circuit 1 includes three circuits, which are a self-charging circuit 11, a feedforward boost charging circuit 丨2, and a tank circuit 13. As shown in FIG. 2, the more detailed electronic component connection relationship in each of the circuits η, 12, and 13 is: the self-charging circuit 11 includes a first diode D1, a pole body 02, and a first The capacitor C is a second capacitor C2, a fourth resistor R4, and a Zener diode Z1 having a stable voltage function in parallel with the second capacitor C2. The feedforward boost charging circuit 12 includes a first resistor R1, a second resistor ^2, a second resistor R3, an inductor L', a first switch sb, a 201232988 diode D3, and a comparison The storage circuit 13 includes an ultracapacitor sci and a protection circuit π including a second switching switch s S2 and its series connected resistor R5. The first switch S1 of the present case is oxidized by N-type metal. The semiconductor semiconductor % effect transistor, abbreviated as NMOSFET is an implementation example, and the detailed description of each end of the first switching switch S1 is: the source s (s〇urceTerminal) coupling of the first switching switch S1 One drain D (Drain Tenninal) of the first switch S1 is coupled to a contact formed between the inductor L and the third diode D3 and the first switch S1 A gate terminal G is coupled to an output of the comparator CM1.
★其中,該第二切換開關S2為N Channel Depletion MOS, 該第二切換開關S2之一汲極D耦接於該第五電阻R5之一 ^、該第一切換開關S2之一源極S编接於該超級電容SCI 之一端以及該第二切換開關S2之一閘極ο耦接於該第五電 阻R5之另一端。 值得注意地,於充電初始狀態下,在該儲能電路13内與 該保護電路131以並聯形式連接的該超級電容sci預設有一 最大容許瞬間電流值(或最大容許操作溫度)及一最大容 許電壓預設值VmaX。且令人理解地,該自供電前饋充電電 路11於各充電路徑配置具「整流(Rectiiying)」功能之該第一 二極體D1、該第二二極體D2及在該儲能電路13内配置該 第三二極體D以防止該第一電容c卜該第二電容C2及該超 級電容SCI所儲存的電流逆向。 對於超級電容SCI充電期間的描述 包括化學能(電池)及光能(光電池、太陽能電池等)等此類 型一外部能量(亦稱之一第一電能A)釋放下,該第一電能A 經由在該自供充電電路11内的該第四電阻R4使得該第二電 容C2儲存該第一電能a。此一充電狀態亦是該前饋昇壓充 201232988 ϊ電;fS啟佳動前’該第—電能八透過該第四電阻114對該 充電(其中該第二電容⑴稽存的能量稱 值I而使得—節點電壓Vp之電壓值達到一閥 分別地啟動哕1及-第二充電路徑_2The second switch S2 is a N Channel Depletion MOS, and one of the second switch S2 is coupled to one of the fifth resistors R5, and one source of the first switch S2 One end of the super capacitor SCI and one of the second switch S2 are coupled to the other end of the fifth resistor R5. Notably, in the initial state of charging, the super capacitor sci connected in parallel with the protection circuit 131 in the energy storage circuit 13 is preset with a maximum allowable instantaneous current value (or maximum allowable operating temperature) and a maximum allowable The voltage preset value is VmaX. And the self-powered feedforward charging circuit 11 is configured with the first diode D1 and the second diode D2 having a "reducing" function on each charging path and the storage circuit 13 The third diode D is disposed to prevent the current stored in the first capacitor c and the second capacitor C2 from being reversed. For the description of the supercapacitor SCI charging period, including chemical energy (battery) and light energy (photocell, solar cell, etc.), etc., an external energy (also referred to as one of the first electric energy A) is released, and the first electric energy A is passed through The fourth resistor R4 in the self-charging circuit 11 causes the second capacitor C2 to store the first electric energy a. The state of charge is also the feedforward booster charge 201232988 ;; fS 佳 动 before the 'the first power 八 through the fourth resistor 114 to charge the charge (where the second capacitor (1) is stored in the energy value I And the voltage value of the node voltage Vp reaches a valve to start the 哕1 and the second charging path respectively.
-二電電路12内該比較器CM 1及該第 切換開關S1 ’而該比較n CM 電壓vp透過該第:雷阻Μ ^疋開集極式輸出’該即點 ⑽内部電晶體t幻產生-驅動電流’使該比較器 考知地’在該前饋昇壓充電電路12内的該比較 壓值而在t接收兩不_入電 雷厭枯^、^ CM 1之該輸出端輸出該節點電壓vp之 下舰! ς近零^伏電壓^。舉例來說,若該比較器CM 1的 -ΓΜ 1 /7及該比較器CM 1的負端接收4V時,則該比較 ΐ 的該輸出端輸出該節點電壓Vp之電壓值,若該比 ==Λ正端触4V及該比較11 CM 1的負端接收5 V, 、Jh比較益CM 1的該輸出端輸出接近零伏電壓值。 在本案中,f 3圖所示,於該比較器CM i之該正端接收 ^固定解(Constant fteqUeney)固定祕㈣齒波_ ^ooth Wave)(需了解地:該鑛齒波為一種非正弦波形形式 (Non-SmUS01dal Waveform,其中被輸入至該比較器CM 1之 該正端之該鋸齒波係以一較和緩坡度(Ramp)向上爬升,並以 一陡峭(sharp)坡度快速度下滑的波形形式)。於該比較哭cm 1之該負端接收在該第一電阻R1及該第二電阻幻之間的一 輸入電壓Vd,其中該輸入電壓Vd经由一分壓電路. 得之電壓- the comparator CM 1 and the first switch S1 ' in the second circuit 12 and the comparison n CM voltage vp through the first: lightning resistance 疋 ^ 疋 open collector output 'the point (10) internal transistor t illusion - the drive current 'causes the comparator to knowably' the comparison voltage value in the feedforward boost charging circuit 12 and receives the two non-input electric shocks at t, and outputs the node at the output of the CM 1 Under the voltage vp ship! ς near zero ^ volts ^. For example, if -ΓΜ 1 /7 of the comparator CM 1 and the negative terminal of the comparator CM 1 receive 4V, the output terminal of the comparison 输出 outputs the voltage value of the node voltage Vp, if the ratio = = Λ positive terminal touch 4V and the comparison 11 CM 1 negative terminal receives 5 V, Jh compares the output of the CM 1 output close to zero volts. In the present case, as shown in the figure f3, the positive end of the comparator CM i receives a fixed fteqUeney fixed secret (four) tooth wave _ ^ooth Wave) (need to know: the ore tooth is a non- In the form of a sinusoidal waveform (Non-SmUS01dal Waveform, wherein the sawtooth wave system input to the positive end of the comparator CM 1 climbs upwards at a gentle slope (Ramp) and rapidly falls with a steep slope. Waveform form). The negative terminal of the comparison crying cm 1 receives an input voltage Vd between the first resistor R1 and the second resistor illusion, wherein the input voltage Vd is passed through a voltage dividing circuit.
Vd=W(R1/(R1+R2)U !,其中該鑛齒波的頻率為該 輸入電壓Vd的頻率10倍以上。 第3圖所示’該圖為該比較器CM】分別接收兩不同電電 201232988 壓值及在一輸出端輸出較大電壓值之波形示意豆 代表電壓值,橫軸代表時間。 /、τ縱袖Vd=W(R1/(R1+R2)U !, wherein the frequency of the ore tooth wave is more than 10 times the frequency of the input voltage Vd. The figure 3 shows that the comparator CM receives two different Electric power 201232988 The voltage value and the waveform of outputting a large voltage value at one output indicate that the bean represents the voltage value, and the horizontal axis represents the time.
於π期間,該比較器CM i之該正端所接收該鑛齒波之 -電壓值Vs大於該比較器CM !之刻端所接收該輸入電壓 Vd時,該比較器CM 1之該輸出端輸出該節點電壓 盆 中該節點電壓Vp大於一特定的臨界電壓Vth(Thresh^d Voltage),之後’當時,NM0SFET S1之源極s及汲 極D間開始導通。此時作為開關之_〇卯£181呈開 On)狀態。而在作為開關之NM0SFETS1呈開狀態下,該第 一電此A對該刖饋升壓充電電路12内的該電感l進行充 電,同時,該第一電能A經由該第一二極體對該第一電 容C1進行充電。此時,該節點電壓Vy呈零伏,使該第三二 極體D3呈不導通狀態下,導致該電感L所儲存能量無法對 該超級電容sci進行充電。當該前饋昇壓充電電路12處於 一穩態時’流經該電感L之電流處於一非連續狀態 (Discontinuous Current Mode) ° 反之’於T2期間’該比較器CM 1之該正端所接收該鋸 齒波之一電壓值Vs小於該比較器CM 1之該負端所接收該輸 入電壓Vd時’該比較器CM 1之該輸出端輸出接近零伏電 壓值,其中所輸出的電壓值小於該臨界電壓Vth,之後,使 得VGs<Vth ’ NMOSFET S1之源極S及汲極D間處於截止狀 態。此時作為開關之龐〇8戸£丁81呈閉(丁職〇均狀態。During the period π, when the positive terminal of the comparator CM i receives the torsion wave-voltage value Vs is greater than the input terminal voltage Vd received by the terminal of the comparator CM, the output of the comparator CM1 The node voltage Vp in the node voltage basin is greater than a specific threshold voltage Vth (Thresh^d Voltage), and then, at that time, the source s and the drain D of the NM0SFET S1 start to conduct. At this time, as the switch, the value of _ 181 181 is ON. When the NM0SFET S1 as the switch is in an open state, the first electric A charges the inductance l in the boost boost charging circuit 12, and the first electric energy A passes through the first diode. The first capacitor C1 is charged. At this time, the node voltage Vy is zero volts, so that the third diode D3 is in a non-conducting state, so that the energy stored in the inductor L cannot charge the super capacitor sci. When the feedforward boost charging circuit 12 is in a steady state, the current flowing through the inductor L is in a discontinuous state (°), and vice versa, during the period T2, the positive terminal of the comparator CM 1 receives When the voltage value Vs of the sawtooth wave is less than the input voltage Vd received by the negative terminal of the comparator CM1, the output of the comparator CM1 outputs a voltage value close to zero volt, wherein the output voltage value is less than the The threshold voltage Vth is thereafter such that the source S and the drain D of the VGs <Vth 'NMOSFET S1 are in an off state. At this time, as a switch, Pang 〇 8 戸 丁 81 81 is closed (Ding job 〇 average state.
此時作為開關之NMOSFET S1呈閉狀態,該節點電壓Vy 昇壓使該第三二極體D3呈導通狀態,該電感L所儲存的能 量經由該第三二極體D3對該超級電容SCI進行充電,該電 感L之部分電流IL經該第三二極體D3流至包含該第二切換 開關S2及該第五電阻R5之該保護電路131内。及該第一電 容C1所儲存的能量經由該第二二極體D2轉移至該第二電容 C2。當該前饋昇壓充電電路12處於一穩態時,流經該電感L 201232988 之電 Sil處於一非連續狀態(Discontinuous Current Mode)。 然而對於圖3中T1期間的NMOSFET呈開(Turn On)時間 的長短,本案提出…具前饋式模式(FeedForward)之…式2At this time, the NMOSFET S1 as a switch is in a closed state, and the node voltage Vy is boosted to turn on the third diode D3. The energy stored in the inductor L is subjected to the super capacitor SCI via the third diode D3. During charging, a portion of the current IL of the inductor L flows through the third diode D3 to the protection circuit 131 including the second switching switch S2 and the fifth resistor R5. The energy stored in the first capacitor C1 is transferred to the second capacitor C2 via the second diode D2. When the feedforward boost charging circuit 12 is in a steady state, the electricity Sil flowing through the inductor L 201232988 is in a discontinuous current mode. However, for the length of the Turn-On time of the NMOSFET during T1 in Figure 3, this paper proposes a feedforward mode (FeedForward).
Ton/T=D,則 Vs(l-D)=V(1)*(R1/(R1+R2))…式 2 其中D為Duty Cycle ’ Ton =71,Vs為該鋸齒波的最大振 幅,T=該鋸齒波的頻率f的倒數(T=T1+T2,T2為醒⑽砰丁 呈閉(Turn Off)時間),Ton時間的越長,代表該第一電能a 對該電感L進行充電時間變長,同時,該第一電能a經由該 第一二極體D1對該第一電容ci進行充電時間也隨之變長, 反之亦然。 在於T2期間,該電感l所儲存的能量經由該第三二極體 D3而對該超級電容SC1進行充電時,而為避免充電的電壓 Vy減〇.7V(0.7V為該第三二極體D3的順向偏壓,其中 Vy-〇.7=V0])超過該超級電容sci之該最大容許電壓預設值 vmax,本案提出…式3 vy =臺 x[(l +Ton/T=D, then Vs(lD)=V(1)*(R1/(R1+R2)) Equation 2 where D is Duty Cycle ' Ton =71, Vs is the maximum amplitude of the sawtooth wave, T= The reciprocal of the frequency f of the sawtooth wave (T=T1+T2, T2 is the wake-up (10) turn-off time (Turn Off) time), the longer the Ton time, represents the first electric energy a, the charging time of the inductor L is changed. At the same time, the charging time of the first capacitor ci via the first diode D1 is also lengthened, and vice versa. During the period T2, when the energy stored in the inductor 1 charges the super capacitor SC1 via the third diode D3, the voltage Vy to avoid charging is reduced by .7V (0.7V is the third diode). The forward bias of D3, where Vy-〇.7=V0]) exceeds the maximum allowable voltage preset value vmax of the supercapacitor sci, which is proposed in this case... Equation 3 vy = station x[(l +
4D2 Ύ" )]xVsx(l-D)x R1 + R2 R14D2 Ύ" )]xVsx(l-D)x R1 + R2 R1
K=2L/((R5+ N Channel Depletion Mode 的内阻)*T)…式 3 值得注意地,其中,當D約等於0.43時,該節點電壓 Vy的值最大。設計時要選擇適當的該第一電阻R1、該第二 電阻R2及κ值,使(該節點電壓Vy減0.7V)即使在D約等 於0.43時也不超過該超級電容sci之該最大容許電壓預設 值 Vmax。 在於T2期間對該電感l所儲存的能量經由該第三二極體 D3對該超級電容SC1進行充電,為避免充電的電流超過該 超級電容sci之該最大容許瞬間電流值Imax(或最大容許操 作溫度),藉由下列一電感峯值電流ip...式4 T -xv L 8K = 2L / ((R5 + N Channel Depletion Mode internal resistance) * T) Equation 3 It is worth noting that, when D is approximately equal to 0.43, the value of the node voltage Vy is the largest. The design should select the appropriate first resistor R1, the second resistor R2 and the κ value so that (the node voltage Vy is reduced by 0.7V), even if D is equal to 0.43, the maximum allowable voltage of the super capacitor sci is not exceeded. The preset value is Vmax. The energy stored in the inductor 1 during T2 is charged to the super capacitor SC1 via the third diode D3, so that the current to avoid charging exceeds the maximum allowable instantaneous current value Imax of the super capacitor sci (or maximum allowable operation) Temperature), by the following inductor peak current ip... Equation 4 T -xv L 8
(l-D)xD R1 + R2 •. ·式 4 /1 4 4201232988 成立之下 ’使得ip/2*T2/T(在於T2期間對該電感L所儲存的能量經由 該第三二極體D3對該超級電容SCI進行充電的τ的平均電 流)^]、於該超級電容sci之該最大容許瞬間電流值Imax(或最 大谷許操作溫度)及ip/2*T2/T遠大於(Vy-0.7)/(R5+N Ch_el Depletion Mode 的内阻),其中 Vy-0.7=V〇】。 依據超級電容SCI充電期間與該超級電容sci並聯的保 護電路的運作描述 對於該超級電容SCI充電期,當n Channel Depletion(lD)xD R1 + R2 •. · Equation 4 /1 4 4201232988 Under the assumption of 'making ip/2*T2/T (the energy stored in the inductor L during T2 via the third diode D3 The average current of τ of the supercapacitor SCI for charging), the maximum allowable instantaneous current value Imax (or the maximum operating temperature) of the supercapacitor sci, and ip/2*T2/T are much larger than (Vy-0.7) /(R5+N Ch_el Depletion Mode internal resistance), where Vy-0.7=V〇]. Operational description of the protection circuit in parallel with the supercapacitor sci during charging of the supercapacitor SCI For the supercapacitor SCI charging period, when n Channel Depletion
MOS S2 之 VGS>Vth,N channel depletion MOS S2 之源極 S 及汲極D間處於導通狀態。此時作為開關之N ChanndVGS of MOS S2, Vth, N channel depletion MOS S2 is in a conducting state between source S and drain D. N Channd as a switch at this time
Depletion MOS S2呈開(Turn On)狀態。依據式3選定(該第五 電阻R5的電阻值+N Channel Depletion Mode的内阻值撂 ν01不超過該超級電容SC1之該最大容許電壓預設值ν·χ。 對於該超級電容SCI充電完畢,當N Channel DepletionDepletion MOS S2 is in the Turn On state. According to Equation 3 (the resistance value of the fifth resistor R5 + the internal resistance value Nν01 of the N Channel Depletion Mode does not exceed the maximum allowable voltage preset value ν·χ of the super capacitor SC1. For charging the super capacitor SCI, When N Channel Depletion
MOS S2 之 VGS<Vth,N channel depletion MOS S2 之源極 S 及汲極D間處於截止狀態。此時作為開關之N Channd Depletion MOS S2呈閉(Turn Off)狀態,以避免該超級電容 SCI所儲存的電荷流至該第五電阻尺5。 因此,針對習知之對超級電容SC1進行充電之缺陋,本 案之該前饋昇縣電電路12以__方式對於該超級電容 SCI此類型的儲能裝置進行充電已有良好的驗證。 基於該自供充電電路Η、該前饋昇壓充電電路丨2及該儲 能電路13之内部各電子元件之連接電路關係,當與該保護 電路131並聯該故級電容SC1置換為一般的電容器時,該前 饋升壓充電電路以則述提及前饋方式對一般電容器進行充 電亦不會影響到該電容器的使用壽命。 【圖式簡單說明】 201232988 第1圖,該®為自# 第2圖,該圖為自電電路的方塊示意圖。 儲能電路内部較詳細的、兄電電路、前饋昇壓充電電路及一 第3圖所示,:巧:的圖示。 •rnm it η 4. 唸圖為該比較器CM 1分別接收兩不同電 一輪出端輪出較大電壓值之波形示意圖,其中縱 軸電壓值,橫轴代表時間。 【主要元件符號說明】 1.自供電前饋充電電路The source S and the drain D of the VGS<Vth, N channel depletion MOS S2 of the MOS S2 are in an off state. At this time, the N Channd Depletion MOS S2 as a switch is in a Turn Off state to prevent the charge stored in the super capacitor SCI from flowing to the fifth resistor 5 . Therefore, in view of the conventional shortage of charging the supercapacitor SC1, the feedforward riser circuit 12 of the present invention has been well verified in the __ mode for charging the supercapacitor SCI type of energy storage device. Based on the connection circuit relationship between the self-charging circuit Η, the feedforward boost charging circuit 丨2, and the internal electronic components of the storage circuit 13, when the priority capacitor SC1 is replaced with the protection circuit 131 in a normal capacitor The feedforward boost charging circuit charges the general capacitor in the feedforward manner as mentioned above, and does not affect the service life of the capacitor. [Simple diagram of the diagram] 201232988 Figure 1, the ® is from #图2, which is a block diagram of the self-powered circuit. The internal details of the energy storage circuit, the brother circuit, the feedforward boost charging circuit and a picture shown in Figure 3, are: • rnm it η 4. The picture shows that the comparator CM 1 receives two different powers. The waveform of the larger voltage value is outputted by one round. The vertical axis voltage value and the horizontal axis represent time. [Main component symbol description] 1. Self-powered feedforward charging circuit
自供充電電路 D1:第一二極體 D2:第二二極體 C1:第一電容 C2:第二電容 R4:第四電阻 Z1:齊納二極體 12:前饋昇壓充電電路 R1:第一電阻 R2:第二電阻 R3:第三電阻 L:電感 S1:第一切換開關 D3:第三二極體 CM 1:比較器 13:儲能電路 131:保護電路 SCI:超級電容 S2:第二切換開關 R5:第五電阻 12Self-charging circuit D1: first diode D2: second diode C1: first capacitor C2: second capacitor R4: fourth resistor Z1: Zener diode 12: feedforward boost charging circuit R1: a resistor R2: a second resistor R3: a third resistor L: an inductor S1: a first switch D3: a third diode CM 1: a comparator 13: a tank circuit 131: a protection circuit SCI: a super capacitor S2: a second Switch R5: fifth resistor 12
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TWI560013B (en) * | 2014-05-30 | 2016-12-01 | Univ Nat Taiwan Normal | A plural resistance-capacitances (prc) electrical discharge machining system |
TWI565209B (en) * | 2015-12-22 | 2017-01-01 | 國立臺灣師範大學 | Quasi universal feed forward dc to dc converter and method |
US9950377B2 (en) | 2014-05-30 | 2018-04-24 | National Taiwan Normal University | Plural resistance-capacitance (PRC) electrical discharge machining system |
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US9950377B2 (en) | 2014-05-30 | 2018-04-24 | National Taiwan Normal University | Plural resistance-capacitance (PRC) electrical discharge machining system |
TWI565209B (en) * | 2015-12-22 | 2017-01-01 | 國立臺灣師範大學 | Quasi universal feed forward dc to dc converter and method |
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