TW201232698A - Method for forming trenches and trench isolation on a substrate - Google Patents

Method for forming trenches and trench isolation on a substrate

Info

Publication number
TW201232698A
TW201232698A TW100102463A TW100102463A TW201232698A TW 201232698 A TW201232698 A TW 201232698A TW 100102463 A TW100102463 A TW 100102463A TW 100102463 A TW100102463 A TW 100102463A TW 201232698 A TW201232698 A TW 201232698A
Authority
TW
Taiwan
Prior art keywords
trench
substrate
forming
area
trench isolation
Prior art date
Application number
TW100102463A
Other languages
Chinese (zh)
Other versions
TWI508222B (en
Inventor
Ching-Hung Kao
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW100102463A priority Critical patent/TWI508222B/en
Publication of TW201232698A publication Critical patent/TW201232698A/en
Application granted granted Critical
Publication of TWI508222B publication Critical patent/TWI508222B/en

Links

Abstract

A method for forming trench isolation on a substrate includes providing a substrate having thereon a pad layer and a hard mask; forming a first shallow trench in a first area and a second trench in a second area on the substrate; forming a resist layer covering the first area while exposing the second area; etching the second shallow trench to form a deep trench; forming oxide liner within the first shallow trench and the deep trench; and filling the shallow trench and the deep trench with an oxide layer.
TW100102463A 2011-01-24 2011-01-24 Method for forming trenches and trench isolation on a substrate TWI508222B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100102463A TWI508222B (en) 2011-01-24 2011-01-24 Method for forming trenches and trench isolation on a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100102463A TWI508222B (en) 2011-01-24 2011-01-24 Method for forming trenches and trench isolation on a substrate

Publications (2)

Publication Number Publication Date
TW201232698A true TW201232698A (en) 2012-08-01
TWI508222B TWI508222B (en) 2015-11-11

Family

ID=47069678

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100102463A TWI508222B (en) 2011-01-24 2011-01-24 Method for forming trenches and trench isolation on a substrate

Country Status (1)

Country Link
TW (1) TWI508222B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI825469B (en) * 2021-08-26 2023-12-11 南亞科技股份有限公司 Manufacturing method of semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW588413B (en) * 2002-11-07 2004-05-21 Winbond Electronics Corp Manufacturing method and device of memory with different depths of isolation trench
KR100538069B1 (en) * 2003-12-16 2005-12-20 매그나칩 반도체 유한회사 Isolation of image sensor for reducing dark signal
TWI300968B (en) * 2006-06-28 2008-09-11 Powerchip Semiconductor Corp Fabrication methods of isolation structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI825469B (en) * 2021-08-26 2023-12-11 南亞科技股份有限公司 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
TWI508222B (en) 2015-11-11

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