201230264 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明係有關於一種在載板上之導接件之側面形成 抗氧化金屬層之製程，特別係有關於一種防止在載板上 之導接件氧化之製程。 【先前技術】 [0002] 請參閱第1圖，在習知凸塊製程中，係會在一基板 100上形成複數個凸塊110，各該凸塊110係具有一頂面 111及一側面112，並且在該些凸塊110之該頂面111上形 成一接合層120，其中該些凸塊110係為銅凸塊，該接合 層120係為鎳-金層，當該些凸塊110之該側面112接觸水 氣後，係會使該些凸塊110係會產生膨脹，因而造成微間 距之相鄰凸塊110接觸而造成短路，且由於該些凸塊110 之該頂面111形成有該接合層120，因此使得該些凸塊 110之該頂面111之材質與該側面112的材質不同而造成 腐蝕效應，此外在該基板100薄化製程中，係會造成該基 板100產生翹曲，而影響後續測試及切割等製程。 【發明内容】 [0003] 本發明之主要目的係在於提供一種在載板上導接件 之側面形成抗氧化金屬層之製程，其步驟包含提供一載 體，該載體係具有複數個銲墊及一保護層；形成一導接 金屬層於該載體上；形成一第一光阻層於該導接金屬層 上；圖案化該第一光阻層，以使該第一光阻層形成有複 數個開口及複數個第一溝槽；在各該開口及各該第一溝 槽中形成一導接件，各該導接件係具有一頂面及一側面 100100074 表單編號A0101 第4頁/共24頁 1002000144-0 201230264 ;移除該第一光阻層，以顯露出各該導接件之該頂面及 該側面；形成一第二光阻層於該導接金屬層上，該第二 光阻層係覆蓋各該導接件；圖案化該第二光阻層，以使 該第二光阻層形成有複數個開口及複數個第二溝槽，各 該開口及各該第二溝槽係顯露出各該導接件之該頂面及 該側面以及該導接金屬層；在各該開口及各該第二溝槽 形成一抗氧化金屬層，該抗氧化金屬層係包覆各該導接 件之該頂面及該側面及被各該開口及各該第二溝槽顯露 該導接金屬層；移除該第二光阻層，以顯露出該抗氧化 金屬層及該導接金屬層；最後移除各該導接件及該抗氧 化金屬層下以外之該導接金屬層。本發明可藉由在形成 該第一光阻層後，圖案化該第一光阻層，並在該第一光 阻層之該些開口或該些溝槽中形成該些導接件（如凸塊、 重分配線路、重分配接墊等），之後，再以該第二光阻層 覆蓋各該導接件，並圖案化該第二光阻層，以顯露出該 些導接件之該頂面及該側面，並在該些導接件之該頂面 及該側面形成該抗氧化金屬層，以使該些導接件具有抗 氧化之功效，以避免該些導接件因氧化而體積膨脹，造 成短路，且在該些導接件之該頂面及該侧面同時形成該 抗氧化金屬層，係可避免因該些導接件之該頂面或該侧 面所包覆材質不同而造成腐蝕效應，此外，在該些導接 件之該頂面及該侧面同時形成該抗氧化金屬層係可在薄 化該載板（如晶圓）時，避免該載板產生翹曲，而影響後 續測試及切割等製程。 【實施方式】 [0004] 請參閱第2A至2K圖，其係為一種在載板上導接件之 100100074 表單編號A0101 第5頁/共24頁 1002000144-0 201230264 側面形成抗氧化金屬層之製程示意圖，首先，請參閱第 _ ’提供-載體ίο ’該載體係具有複數個銲塾u、複 數個線路12及-保護和’該保護層13具有複數個開口 13a，該保護層13係覆蓋該些線路12，且該些開口 “a係 顯露出該些銲塾n，在本實施例中，該載㈣係為㈣ ’該保護層13的材質可選自於無機化合物（如氡魏合物 、氮矽化合物或磷矽玻璃)或有機化合物(如是聚醯亞胺) 。接著，請參閱第2B圖，形成一導接金屬層2〇於該載體 1〇上，該導接金屬層2〇係覆蓋該些銲墊丨丨及該保護層a ，且該導接金屬層20係與該些銲墊丨丨電性連接，該導接 金屬層20係可以濺鍍方法形成於該載镀1〇上該導接金 屬層20可包含有一鈦層21及一鋼層22，該鈦層以係位於 該載體10與該鋼層22之間。之後，請參閱第沉圖，形成 一第—光阻層30於該導接金屬層20上，該第一光阻層3〇 係覆蓋該導接金屬層20，該第一光阻層3〇係可選自於正 型光阻。接著，請參閱第20圖，進行圖案化該第一光阻 層30步驟，其係藉由一光蕈（圖未繪出）並經曝光及顯影 等製程’以使該第一光阻層30形成有複數個第一開口31 、複數個第二開口 32及複數個第一溝槽33，其中該些第 一開口 31係位於該些得墊11上方’且該些第一開口 31、 該些第二開口 32及該些第一溝槽33係顯露出該導接金屬 層20。之後，請參閱第2E圖’在該第一光阻層3〇之各該 第一開口31、各該第二開口 32及各該第一溝槽33中形成 —導接件40，在本實施例中各該導接件40的材質係為銅 ’各該導接件40係電性連接該導接金屬層20，在本實施 例中，形成於各該第一開口31中之該導接件40係為凸塊 100100074 表單編號A0101 第6頁/共24頁 1002000144-0 201230264 4〇a，形成於各該第二開口 32中之各該導接件4〇係為重分 佈導接塾4Gb，形成於各該第—溝槽33巾之之各該導接件 40係為重分佈線路4〇c，各該導接件係具有一頂面ο及一 側面42，各該導接件40(凸塊40a、重分佈導接墊4〇b及 重分佈線路4〇c)係可以電鍍方法形成於各該第一開口31 各《亥第一開口 32及各該第一溝槽33 ^接著，請參閱第 2F圖，進行移除該第一光阻層3〇之步驟，以顯露出各該 導接件40(凸塊4〇a、重分佈導接墊4〇b及重分佈線路 40c)之該頂面41及該側面42。之後，請參閱第2G1及2G2 圖，形成一第二光阻層5〇於該導接金屬層20上，請參閱 第2G1圖，該第二光阻層5〇之形成方法係可為旋轉塗佈（ SPIN COATING) ’該第二光阻層5〇係覆蓋各該導接件 40 ’或者，請參閱第2G2圖，該第二光阻層50之形成方法 係可為喷霧披覆（SPRAY COATING)，該第二光阻層50係 覆蓋各該導接件4〇，該第二光阻層50係可選自於正型光 阻°接著’請參閱第2H1及2H2圖，進行圖案化該第二光 阻廣50步驟，請參閱第2H1圖，其係藉由一光罩（圖未繪 出）並經曝光及顯影等製程，以使該第二光阻層50形成有 複數個第三開口 51、複數個第四開口 52及複數個第二溝 槽53 ’其中該些第三開口 51係位於該些銲墊丨丨上方，且 各該第三開口 51、各該第四開口 52及各該第二溝槽53係 顯露出各該導接件40之該頂面41及該側面42，此外，各 該第三開口51、各該第四開口52及各該第二溝槽53亦顯 露出在各該第三開口 51、各該第四開口52及各該第二溝 槽53中之該導接金屬層2〇，在本實例該各該第三開口 51 係顯露出各該凸塊4〇a之頂面及側面，各該第四開口52係 100100074 表單編號A0101 第7頁/共24頁 1002000144-0 201230264 顯露出各該重分佈導接墊40b之頂面及側面，各該第二溝 槽5 3係顯露出各該重分佈線路4 0 c之頂面及侧面，或者， 請參閱第2H2圖，各該第三開口 51、各該第四開口52及各 該第二溝槽53係顯露出各該導接件40之該頂面41及該側 面42，且各該第三開口 51、各該第四開口 52及各該第二 溝槽53亦顯露出在各該第三開口51、各該第四開口52及 各該第二溝槽53中之該導接金屬層20。接著，請參閱第 211及212圖，在該第二光阻層50之各該第三開口 51、各 該第四開口52及各該第二溝槽53中形成一抗氧化金屬層 60，該抗氧化金屬層60係包覆各該導接件40之該頂面41 及該側面42，在本實施例中，該抗氧化金屬層30亦覆蓋 被各該第三開口 51、各該第四開口52及各該第二溝槽53 顯露之該導接金屬層20，使得該抗氧化金屬層30與在該 抗氧化金屬層30下之該導接金屬層20係具有一接合界面A ，該抗氧化金屬層60係可以電鍍方法形成於各該導接件 40之該頂面41及該側面42，在本實施例中，該抗氧化金 屬層60係包含有一錄層61及一金層·62，該錄層61係位於 各該導接件40與該金層62之間。之後，請參閱第2J圖， 進行移除該第二光阻層步驟，以顯露出該抗氧化金屬層 60及該導接金屬層20。最後，請參閱第2K圖，以各該導 接件40及該抗氧化金屬層60為罩幕，移除各該導接件40 及該抗氧化金屬層60下以外之該導接金屬層20，以使該 些銲墊11上之該導接金屬層20形成為一凸塊下金屬層20A ，在本實施例中係以蝕刻方法移除該導接金屬層2 0。 本發明係在該載板10上之該些導接件40之該頂面41 及該側面42形成該抗氧化金屬60，以使該些導接件40具 100100074 表單編號A0101 第8頁/共24頁 1002000144-0 201230264 有抗氧化之功效’其係可避免該些導接件4〇因氡化而體 積膨脹，而造成相鄰的導接件4〇接觸形成短路，且在該 些導接件40之該頂面41及該側面42同時形成該抗氧化金 屬層60，係玎避免如習知技術所揭露僅於該些導接件之 該頂面形成導接層而造成，該些導接件之頂部與側部材 質不同，因氧化還原電位差造成電池腐蝕效應，此外， 本發明在該些導接件40之該頂面41及該側面42同時形成 該抗氧化金屬層60係可在薄化該載板10(如晶圓）時，避 免該載板10產生翹曲，而影響後續測試及切割等製程。 此外在形成該抗氧化金屬層之步驟中，由於該抗 氧化金屬層30係包覆該各該導接件之該頂面ο、該側 面42及覆蓋該抗氧化金屬層6〇下之該導接金屬層2〇，因 此使得該抗氧化金屬層30與該抗氧化金屬層6〇下之該導 接金屬層20具有該接合界面a，而該接合界面a係使得水 氣無法滲透入各該導接件4〇，以避免各該導接件4〇與該 抗氡化金屬層60間產生氧也::丨L丨" 本發明之保護範圍當視後附之申.蓴利範圍所界定 者為準，任何熟知此項技藝者，在不脫離本發明之精神 和範圍内所作之任何變化與修改，均屬於本發明之保護 範圍。 【圖式簡單說明】 [0005]第1圖：習知在一基板上形成複數個凸塊之示意圖。 第2A圖：依據本發明之一較佳實施例，提供一載體之示 意圖。 第2B圖：依據本發明之一較佳實施例，形成一導接金屬 層於該載體之示意圖。 100100074 表單編號A0101 第9頁/共24頁 1002000144-0 201230264 第2C圖：依據本發明之一較佳實施例，形成一第一光阻 層於導接金屬層上之示意圖。 第2D圖：依據本發明之一較佳實施例，進行圖案化第一 光阻層之示意圖。 第2E圖：依據本發明之一較佳實施例，在第一光阻層之 第一開口、第二開口及第一溝槽中形成導接件之示意圖 〇 第2F圖：依據本發明之一較佳實施例，移除第一光阻層 之示意圖。 第2G1圖：依據本發明之一較佳實施例，形成一第二光阻 層於該導接金屬層上之示意圖。 第2G2圖：依據本發明之另一較佳實施例，形成一第二光 阻層於該導接金屬層上之示意圖。 第2H1圖：依據本發明之一較佳實施例，進行圖案化該第 二光阻層之示意圖。 第2H2圖：依據本發明之另一較隹實施例，進行圖案化該 第二光阻層之示意圖。 第211圖：依據本發明之一較佳實施例，在第二光阻層之 第三開口、第四開口及第二溝槽中形成一抗氧化金屬層 之示意圖。 第212圖：依據本發明之另一較佳實施例，在第二光阻層 之第三開口、第四開口及第二溝槽中形成一抗氧化金屬 層之示意圖。 第2J圖：依據本發明之一較佳實施例，移除第二光阻層 之示意圖。 第2K圖：依據本發明之一較佳實施例，移除導接件及抗 100100074 表單編號A0101 第10頁/共24頁 1002000144-0 201230264 氧化金屬層下以外之導接金屬層之示意圖。 【主要元件符號說明】 [0006] 10 載體 11 銲墊 12 線路 13 保護層 13a 開口 20 導接金屬層 20A 凸塊下金屬層 21 鈦層 22 銅層 30 第一光阻層 31 第一開口 32 第二開口 33 第一溝槽 40 導接件 40a 凸塊 40b重分佈導接墊 40c 重分佈線路 41 頂面 42 侧面 50 第二光阻層 51 第三開口 52 第四開口 53 第三溝槽 60 抗氧化金屬層 61 鎳層 62 金層 100 基板 110凸塊 111 頂面 112側面 120 接合層 A 接合界面 Ο Ο 100100074 表單編號Α0101 第11頁/共24頁 1002000144-0201230264 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a process for forming an oxidation resistant metal layer on the side of a conductive member on a carrier board, and more particularly to a prevention on a carrier board The process of oxidizing the guides. [Previous Art] [0002] Referring to FIG. 1 , in a conventional bump process, a plurality of bumps 110 are formed on a substrate 100, and each of the bumps 110 has a top surface 111 and a side surface 112. And forming a bonding layer 120 on the top surface 111 of the bumps 110, wherein the bumps 110 are copper bumps, and the bonding layer 120 is a nickel-gold layer, and the bumps 110 When the side surface 112 is in contact with the water vapor, the bumps 110 are caused to expand, thereby causing the adjacent bumps 110 of the micro pitch to contact and cause a short circuit, and since the top surface 111 of the bumps 110 is formed The bonding layer 120 thus causes the material of the top surface 111 of the bumps 110 to be different from the material of the side surface 112 to cause a corrosive effect, and in the thinning process of the substrate 100, the substrate 100 is warped. And affect the subsequent testing and cutting processes. SUMMARY OF THE INVENTION [0003] The main object of the present invention is to provide a process for forming an oxidation resistant metal layer on the side of a conductive member on a carrier, the step of which includes providing a carrier having a plurality of pads and a carrier a protective layer; forming a conductive metal layer on the carrier; forming a first photoresist layer on the conductive metal layer; patterning the first photoresist layer to form the first photoresist layer The opening and the plurality of first grooves; forming a guiding member in each of the openings and each of the first grooves, each of the guiding members having a top surface and a side surface 100100074 Form No. A0101 Page 4 of 24 Page 1002000144-0 201230264; removing the first photoresist layer to expose the top surface and the side surface of each of the conductive members; forming a second photoresist layer on the conductive metal layer, the second light a barrier layer covering each of the guiding members; patterning the second photoresist layer such that the second photoresist layer is formed with a plurality of openings and a plurality of second trenches, each of the openings and each of the second trenches Forming the top surface and the side surface of each of the guiding members and the guiding metal layer; Each of the openings and each of the second trenches form an anti-oxidation metal layer, the anti-oxidation metal layer covering the top surface and the side surface of each of the guiding members and being exposed by each of the openings and each of the second trenches Leading the metal layer; removing the second photoresist layer to expose the oxidation resistant metal layer and the conductive metal layer; and finally removing the conductive member and the conductive metal layer Metal layer. After the first photoresist layer is formed, the first photoresist layer is patterned, and the vias are formed in the openings or trenches of the first photoresist layer (eg, a bump, a redistribution line, a redistribution pad, etc., and then covering each of the vias with the second photoresist layer, and patterning the second photoresist layer to reveal the vias The top surface and the side surface, and the anti-oxidation metal layer are formed on the top surface and the side surface of the guiding members, so that the guiding members have anti-oxidation effect to prevent the guiding members from being oxidized The volume is expanded to cause a short circuit, and the anti-oxidation metal layer is simultaneously formed on the top surface and the side surface of the conductive members, so that the top surface or the side surface of the conductive members may be prevented from being coated with different materials. And causing a corrosive effect. In addition, simultaneously forming the anti-oxidation metal layer on the top surface and the side surface of the conductive members can prevent the carrier from warping when the carrier (such as a wafer) is thinned. It affects the subsequent testing and cutting processes. [Embodiment] [0004] Please refer to FIGS. 2A to 2K, which is a process for forming an anti-oxidation metal layer on the side of a 100100074 form number A0101 on the carrier board, page 5 / page 2420002000-0 201230264 Schematic, first, please refer to the section _ 'providing-carrier ίο' that the carrier has a plurality of soldering dies u, a plurality of lines 12 and - protection and 'the protective layer 13 has a plurality of openings 13a, the protective layer 13 covering the The wires 12, and the openings "a show the solder bumps n. In the present embodiment, the carrier (4) is (4) 'The material of the protective layer 13 may be selected from inorganic compounds (such as bismuth-containing compounds). , a ruthenium compound or a bismuth glass) or an organic compound (such as a polyimide). Next, referring to FIG. 2B, a conductive metal layer 2 is formed on the carrier 1 , and the conductive layer 2 〇 Covering the pads 丨丨 and the protective layer a, and the conductive metal layer 20 is electrically connected to the pads, and the conductive metal layer 20 can be formed by sputtering. The conductive metal layer 20 may include a titanium layer 21 and a steel layer 22, the titanium layer Between the carrier 10 and the steel layer 22. After that, please refer to the sinker pattern to form a first photoresist layer 30 on the conductive metal layer 20, and the first photoresist layer 3 covers the conductive layer. The metal layer 20, the first photoresist layer 3 can be selected from a positive photoresist. Next, referring to FIG. 20, the step of patterning the first photoresist layer 30 is performed by using a diaphragm ( The process is performed by exposure and development, such that the first photoresist layer 30 is formed with a plurality of first openings 31, a plurality of second openings 32, and a plurality of first trenches 33, wherein the first An opening 31 is located above the pads 11 and the first openings 31, the second openings 32 and the first trenches 33 expose the conductive metal layer 20. After that, please refer to the 2E The guide member 40 is formed in each of the first openings 31, the second openings 32, and the first trenches 33 of the first photoresist layer 3, and in the embodiment, the conductive contacts The material of the member 40 is made of copper. Each of the guiding members 40 is electrically connected to the guiding metal layer 20. In the embodiment, the guiding member is formed in each of the first openings 31. 40 series is a bump 100100074 Form No. A0101 Page 6 / 24 pages 1002000144-0 201230264 4〇a, each of the guide members 4 formed in each of the second openings 32 is a redistribution guide 塾 4Gb, forming Each of the guiding members 40 of each of the first grooves 33 is a redistribution line 4〇c, each of the guiding members has a top surface ο and a side surface 42, each of the guiding members 40 (bumps) 40a, a redistribution pad 4b and a redistribution line 4〇c) may be formed by electroplating in each of the first openings 31, the first opening 32 and each of the first grooves 33. 2F, the step of removing the first photoresist layer 3 is performed to expose the respective vias 40 (bumps 4a, redistribution pads 4b, and redistribution lines 40c) Top surface 41 and the side surface 42. Then, referring to the 2G1 and 2G2 drawings, a second photoresist layer 5 is formed on the conductive metal layer 20. Referring to FIG. 2G1, the second photoresist layer 5 is formed by spin coating. SPIN COATING 'The second photoresist layer 5 覆盖 covers each of the conductive members 40 ′ or, see FIG. 2G2 , the second photoresist layer 50 can be formed by spray coating (SPRAY) COATING), the second photoresist layer 50 covers each of the conductive members 4, and the second photoresist layer 50 can be selected from a positive photoresist. Then, please refer to the 2H1 and 2H2 patterns for patterning. The second photoresist has a plurality of steps. Please refer to FIG. 2H1, which is formed by a photomask (not shown) and exposed and developed, so that the second photoresist layer 50 is formed with a plurality of patterns. a third opening 51, a plurality of fourth openings 52, and a plurality of second grooves 53', wherein the third openings 51 are located above the pads, and each of the third openings 51 and the fourth openings 52 Each of the second trenches 53 exposes the top surface 41 and the side surface 42 of each of the guiding members 40. Further, each of the third openings 51 and the fourth openings 52 Each of the second trenches 53 is also exposed in each of the third openings 51, the fourth openings 52, and the second trenches 53. In the present example, each of the third trenches The opening 51 is formed to expose the top surface and the side surface of each of the bumps 4a, and each of the fourth openings 52 is 100100074. Form No. A0101, page 7 / page 24, 1002000144-0 201230264, each of the redistribution pads 40b is exposed. The top surface and the side surface of each of the second trenches 5 3 expose the top surface and the side surface of each of the redistribution lines 40 c, or refer to the second H2, each of the third openings 51 and the fourth The opening 52 and each of the second grooves 53 expose the top surface 41 and the side surface 42 of each of the guiding members 40, and each of the third openings 51, the fourth openings 52 and the second grooves The conductive metal layer 20 is also exposed in each of the third openings 51, the fourth openings 52, and the second trenches 53. Next, referring to the figures 211 and 212, an anti-oxidation metal layer 60 is formed in each of the third openings 51, the fourth openings 52, and the second trenches 53 of the second photoresist layer 50. The anti-oxidation metal layer 60 covers the top surface 41 and the side surface 42 of each of the guiding members 40. In this embodiment, the oxidation resistant metal layer 30 also covers the third opening 51 and the fourth portion. The opening 52 and the second trench 53 expose the conductive metal layer 20 such that the oxidation resistant metal layer 30 and the conductive metal layer 20 under the oxidation resistant metal layer 30 have a bonding interface A. The anti-oxidation metal layer 60 can be formed on the top surface 41 and the side surface 42 of each of the guiding members 40. In the embodiment, the oxidation resistant metal layer 60 includes a recording layer 61 and a gold layer. 62. The recording layer 61 is located between each of the guiding members 40 and the gold layer 62. Thereafter, referring to FIG. 2J, the step of removing the second photoresist layer is performed to expose the oxidation resistant metal layer 60 and the conductive metal layer 20. Finally, referring to FIG. 2K, each of the guiding member 40 and the oxidation resistant metal layer 60 is used as a mask to remove the guiding metal layer 20 except the guiding member 40 and the anti-oxidation metal layer 60. The conductive metal layer 20 on the pads 11 is formed as an under bump metal layer 20A. In this embodiment, the conductive metal layer 20 is removed by etching. The top surface 41 and the side surface 42 of the guiding members 40 on the carrier board 10 form the oxidation resistant metal 60 so that the guiding members 40 have 100100074 Form No. A0101 Page 8 / Total 24 pages 1002000144-0 201230264 have anti-oxidation effect's in order to avoid the volume expansion of the guiding members 4〇 due to deuteration, causing adjacent guiding members 4〇 to form a short circuit, and in the guiding The top surface 41 of the member 40 and the side surface 42 simultaneously form the oxidation resistant metal layer 60, so as to avoid the formation of a conductive layer on the top surface of the conductive members as disclosed in the prior art. The top surface of the connector is different from the material of the side portion, and the battery corrosion effect is caused by the difference of the oxidation-reduction potential. In addition, the top surface 41 of the connecting member 40 and the side surface 42 simultaneously form the anti-oxidation metal layer 60. When the carrier 10 (such as a wafer) is thinned, warpage of the carrier 10 is prevented, which affects processes such as subsequent testing and cutting. In addition, in the step of forming the anti-oxidation metal layer, the anti-oxidation metal layer 30 covers the top surface of the respective connection member, the side surface 42 and the guide layer covering the anti-oxidation metal layer 6 Connecting the metal layer 2, so that the metal oxide layer 30 and the conductive metal layer 20 under the oxidation resistant metal layer 6 have the bonding interface a, and the bonding interface a makes the water gas inaccessible The guiding member 4〇 prevents the oxygen between the connecting member 4〇 and the anti-deuterated metal layer 60 from being generated::丨L丨" The scope of protection of the present invention is attached to the scope of the application. Any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are intended to be included in the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS [0005] FIG. 1 is a schematic view showing the formation of a plurality of bumps on a substrate. Figure 2A is a schematic illustration of a carrier in accordance with a preferred embodiment of the present invention. Fig. 2B is a schematic view showing the formation of a conductive metal layer on the carrier in accordance with a preferred embodiment of the present invention. 100100074 Form No. A0101 Page 9 of 24 1002000144-0 201230264 FIG. 2C is a schematic view showing the formation of a first photoresist layer on a conductive metal layer in accordance with a preferred embodiment of the present invention. Figure 2D is a schematic illustration of a patterned first photoresist layer in accordance with a preferred embodiment of the present invention. 2E is a schematic view showing the formation of a guiding member in the first opening, the second opening and the first groove of the first photoresist layer according to a preferred embodiment of the present invention. FIG. 2F is a diagram according to the present invention. In a preferred embodiment, a schematic diagram of the first photoresist layer is removed. 2G1 is a schematic view showing the formation of a second photoresist layer on the conductive metal layer in accordance with a preferred embodiment of the present invention. Figure 2G2 is a schematic view showing the formation of a second photoresist layer on the conductive metal layer in accordance with another preferred embodiment of the present invention. 2H1 is a schematic view showing patterning of the second photoresist layer in accordance with a preferred embodiment of the present invention. 2H2: A schematic diagram of patterning the second photoresist layer in accordance with another embodiment of the present invention. Figure 211 is a schematic view showing the formation of an oxidation resistant metal layer in the third opening, the fourth opening and the second trench of the second photoresist layer in accordance with a preferred embodiment of the present invention. Figure 212 is a schematic view showing the formation of an oxidation resistant metal layer in the third opening, the fourth opening and the second trench of the second photoresist layer in accordance with another preferred embodiment of the present invention. Figure 2J is a schematic illustration of the removal of a second photoresist layer in accordance with a preferred embodiment of the present invention. 2K is a schematic view of a conductive metal layer other than under the oxidized metal layer, in accordance with a preferred embodiment of the present invention, removing the conductive member and resisting 100100074 Form No. A0101 Page 10 of 24 1002000144-0 201230264. [Main component symbol description] [0006] 10 carrier 11 pad 12 line 13 protective layer 13a opening 20 conductive metal layer 20A under bump metal layer 21 titanium layer 22 copper layer 30 first photoresist layer 31 first opening 32 Two openings 33 first trench 40 junction 40a bump 40b redistribution pad 40c redistribution line 41 top surface 42 side 50 second photoresist layer 51 third opening 52 fourth opening 53 third trench 60 resistant Oxidized metal layer 61 Nickel layer 62 Gold layer 100 Substrate 110 bump 111 Top surface 112 Side 120 Bonding layer A Bonding interface Ο 100 100100074 Form number Α 0101 Page 11 / Total 24 pages 1002000144-0