TW201229086A - Conductive composition and method for producing conductive coating film - Google Patents

Conductive composition and method for producing conductive coating film Download PDF

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TW201229086A
TW201229086A TW100137284A TW100137284A TW201229086A TW 201229086 A TW201229086 A TW 201229086A TW 100137284 A TW100137284 A TW 100137284A TW 100137284 A TW100137284 A TW 100137284A TW 201229086 A TW201229086 A TW 201229086A
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conductive composition
substituted
complex
sulfur trioxide
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TWI470002B (en
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Takeshi Otaka
Hiroshi Fukumoto
Satoshi Yamashita
Yoichi Kanda
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Sanyo Chemical Ind Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • C08G61/122Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
    • C08G61/123Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
    • C08G61/126Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
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    • H01G4/129Ceramic dielectrics containing a glassy phase, e.g. glass ceramic
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10Definition of the polymer structure
    • C08G2261/14Side-groups
    • C08G2261/142Side-chains containing oxygen
    • C08G2261/1424Side-chains containing oxygen containing ether groups, including alkoxy
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3223Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/50Physical properties
    • C08G2261/51Charge transport
    • C08G2261/516Charge transport ion-conductive
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/36Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/41Compounds containing sulfur bound to oxygen

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Abstract

Provided is a conductive composition that can produce a conductive coating film having a high conductivity and low corrosiveness. The composition contains a sulfur trioxide complex and a substituted polythiophene of which at least a portion of the thiophene repeating units are substituted at the 3-position and/or the 4-position of the thiophene ring by at least one group selected from the group consisting of: a polyether group having 1-9 repeating units of an oxyalkylene group having 2-4 carbon atoms and of which one terminal is an alkyl group having 1-15 carbon atoms; an alkoxy group having 1-15 carbon atoms; an alkoxyalkyl group having 1-19 carbon atoms; and an alkyl group having 1-15 carbon atoms or said alkyl group of which a hydrogen atom has been substituted with the polyether group. The composition can be used as a conductive composition for a solid electrolyte capacitor.

Description

201229086 發明說明: 【發明所屬之技術領域】 本發明係關於一種導電性组成物。更詳細而古, 明係關於包含導電性高分子及㈣之化學構造之^雜= 導電性組成物、使用導電性組成物而成之固體電解電一 用電極、冑用導電性組成物而成之固體電解電容器、:益 導電性組成物所形成之導電性被膜之製造方法。 由 【先前技術】 近年來,嘗試有可在低溫於可撓性基材上賦予導 之導電性高分子化合物之開[並期待應用於導電功能材 料、發光功能材料及光電轉換功能材料等。 犯 先前,已知提供導電性被膜之導電性高分子較佳為以 具有績酸基之化合物作為摻㈣(例如,參料利文獻^ 及2 )。 於專利文獻卜提出有使„苯乙料酸作為摻雜劑之 水分散膠體狀塗液。然'而,|塗液存在親水性極高,使用 本塗液所製作之導電性被膜之吸濕性較高,存在有由於吸 f而產生之強酸性氫離子與被膜接觸之金屬等腐蝕等問 題。又’使用本塗液所獲得之導電被膜之導電率為⑽^ 左右’、應用於導電功能材料必需之導電率不可謂充分。 一又,於專利文獻2,提出有使用具有磺酸基之縮聚合化 合物作為摻雜劑之方法,藉由進行電解氧化聚合而獲得表 良子之導電性之膜。然而,使用本塗液所獲得之導電被 膜之導電率為⑽S/Cm左右,作為應用於導電功能材料所 3 201229086 必需之導電率不可謂充分。 [專利文獻1]曰本特開平7- 90060號公報201229086 DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a conductive composition. More specifically and in detail, the Ming system is composed of a conductive polymer and a chemical structure of (4), a conductive composition, a solid electrolytic electrode using a conductive composition, and a conductive composition. A solid electrolytic capacitor: a method for producing a conductive film formed by a conductive composition. [Prior Art] In recent years, attempts have been made to open a conductive polymer compound which can be guided at a low temperature on a flexible substrate [and are expected to be applied to a conductive functional material, a light-emitting functional material, and a photoelectric conversion functional material. Conventionally, it has been known that a conductive polymer which provides a conductive film is preferably doped with a compound having a acid group (for example, reference materials and 2). In the patent literature, there is a water-dispersible colloidal coating liquid which uses benzene benzene acid as a dopant. However, the coating liquid has a high hydrophilicity, and the conductive coating made of the coating liquid absorbs moisture. The problem is higher, and there is a problem that the strong acidic hydrogen ions generated by the absorption of f are corroded by the metal in contact with the film, etc. The conductivity of the conductive film obtained by using the coating liquid is about (10)^, and is applied to the conductive function. The conductivity required for the material is not sufficient. Further, in Patent Document 2, a method of using a polycondensation polymer compound having a sulfonic acid group as a dopant is proposed, and a film of conductivity of the fern is obtained by performing electrolytic oxidation polymerization. However, the conductivity of the conductive film obtained by using the coating liquid is about (10) S/cm, and the conductivity required for the application of the conductive functional material 3 201229086 is not sufficient. [Patent Document 1] 曰本特开平 7-90060 Bulletin

[專利文獻2]曰本特開2007- 224182號公報 【發明内容J 本發明之目的在於提供一種可製作腐蝕性小真導電率 高之導電性被膜之導電性組成物。 本發月為種導電性組成物(A ),含有經取代之聚嗟 吩(P )及二氧化硫錯合物,上述經取代之聚噻吩(p )係 嗔吩重複單4立中之至少一部A為噻吩重複單& ( “),該噻 吩重複單位(〇:)係嘆吩環之3位及/或4位被選自由下述 通式(1)所示之聚醚基(a)、 碳數1〜15之烷氧基(b)、 碳數2〜19之烷氧基烷基(c)'以及 石厌數1〜15之烷基或該烷基之氫原子經上述聚醚基(a) 取代之烷基(d )構成之群中之至少i個基所取代。 OR^[Patent Document 2] JP-A-2007-224182 SUMMARY OF THE INVENTION An object of the present invention is to provide a conductive composition capable of producing a conductive film having high corrosivity and high electrical conductivity. The present month is a conductive composition (A) containing a substituted polyporphin (P) and a sulfur dioxide complex, and at least one of the substituted polythiophene (p) porphin repeats A is a thiophene repeating unit & ("), and the 3-position and/or 4-position of the thiophene repeating unit (〇:) is a polyether group (a) represented by the following formula (1) An alkoxy group having 1 to 15 carbon atoms (b), an alkoxyalkyl group having 2 to 19 carbon atoms (c)', and an alkyl group having 1 to 15 carbon atoms or a hydrogen atom of the alkyl group via the above polyether Substituting at least i groups of the group consisting of the substituted alkyl group (d).

OR2OR2

CD 式中,OR1表示碳數2〜4之氧基伸烷基(〇xyal,kylene group),R2表示碳數1〜15之烷基,让為i〜9之整數。 本4s明之導電性組成物因腐餘性較小,故可對易引起 腐蝕之金屬等進行塗佈,並且由於其導電被膜為高導電 4 201229086 性,故可期待應用於各種導電功能材料。 【實施方式】 本發明之導電性組成物(A)含有經取代之聚噻吩(p: 及作為摻雜劑之三氧化硫錯合物,上述經取代之聚嗟吩⑺ 係售力重,單位中之至少—部分為嗟吩重複單位(“),該 嗟吩重複早位(α )係嗔吩環之3位及以4位被上述聚鍵 基⑴、上述炫氧基⑴、上述烧氧基貌基(c)或上述烧 基⑷所取代(於說明書中,亦稱為「。塞吩重複單位(α )」)。 如上述通式⑴所示,上述聚越基(a)係具有由碳數 2〜4=氧基伸院基構成之重複單位,且該重複單位數為^ 〜9,單未端為碳數丨〜15之烷氧基之聚醚基。 碳數2〜4之氧基伸烧基,可列舉氧基伸乙基、氧基伸 丙基及氧基伸丁基等。 末端之碳數1〜15之烷氧基,可列舉:甲氧基、乙氧 基、丙氧基、4丙氧基、正、異、第二或第三丁氧基、戊 氧基、己氧基、庚氧基、辛氧基、2—乙基己氧基、壬氧基、 癸氧基、十一烷氧基、十二烷氧基、十三烷氧基、十四烷 氧基及十五烷氧基等。 上述烷氧基(b),可列舉與上述聚醚基(a)所例示者 相同之碳數1〜15之烷氧基。 上述烧氡基烷基(c)’可列舉經碳數ι〜15之烷氧基取 代之碳數1〜4之烷基。碳數1〜15之烷氧基,可列舉與上 述聚鱗基(a )中所例示之相同者,碳數1〜4之烷基,可列 舉:曱基、乙基、正或異丙基、及正、第二、異或第三丁 201229086 基等。 塞吻重複單位(α )所具有之烷基(d),可列舉碳數j 〜15之直鏈或支鏈烷基,例如:甲基、正或異丙基、正、 異、第二或第三丁基、正或異戍基、環戊基、正或異己基、 環己基、正或異庚基、正或異辛基小乙基己基、正或異 壬基、正或異癸基、正或異十一烷基、正或異十二烷基、 正或異十三烧基、正或異十四烧基及正或異十五炫基。 烧基⑷’亦可為上述烧基之氫原子經上述聚醚土基(a) 取代之烧基。 本發明中之經取代之聚噻吩(P ) J所具有之噻吩重複單 位(α ),就導電性之觀點而言較 番遴罝々rr 1 N 為下述通式(2)所表 不之重複早位(αΐ)、下述通式(3) 〇、七nr^、 汀表示之重複單位(α 2)或下述通式(4)所表示之重複單仅(3 6 201229086In the formula CD, OR1 represents an alkyl group having 2 to 4 carbon atoms, and R2 represents an alkyl group having 1 to 15 carbon atoms, and is an integer of i to 9. Since the conductive composition of the present invention is small in corrosion resistance, it can be applied to a metal which is liable to cause corrosion, and since the conductive film is highly conductive, it can be expected to be applied to various conductive functional materials. [Embodiment] The conductive composition (A) of the present invention contains a substituted polythiophene (p: and a sulfur trioxide complex as a dopant, and the above-mentioned substituted polybenzazole (7) is sold in a unit weight. At least part of the porphin repeat unit ("), the porphin repeats the 3rd position of the (o) oxime ring and the 4th position of the above-mentioned poly-bonding group (1), the above-mentioned methoxy group (1), the above-mentioned oxygen burning Substituting the base (c) or the above-mentioned alkyl group (4) (also referred to as "the pheno repeat unit (α)" in the specification). As shown in the above formula (1), the above-mentioned poly (a) has a repeating unit composed of a carbon number of 2 to 4 = an oxygen-extended base, and the repeating unit number is from 〜9, and the single-end is a polyether group having an alkoxy group having a carbon number of -15 to 15 carbon atoms. Examples of the oxyalkylene group include an oxyethyl group, an oxypropyl group, and an oxybutyl group. The alkoxy group having a carbon number of 1 to 15 at the terminal may, for example, be a methoxy group, an ethoxy group or a propoxy group. 4 propoxy, n-, iso-, second or third butoxy, pentyloxy, hexyloxy, heptyloxy, octyloxy, 2-ethylhexyloxy, decyloxy, decyloxy, ten Alkoxy group, dodecyloxy group, tridecyloxy group, tetradecyloxy group, pentadecyloxy group, etc. The above alkoxy group (b) may be exemplified by the above polyether group (a). The same alkoxy group having 1 to 15 carbon atoms. The above-mentioned decylalkyl group (c)' may be an alkyl group having 1 to 4 carbon atoms which is substituted by an alkoxy group having a carbon number of 15 to 15. Carbon number 1 to 15 The alkoxy group may, for example, be the same as those exemplified in the above-mentioned polyfluorenyl group (a), and an alkyl group having 1 to 4 carbon atoms, and examples thereof include a mercapto group, an ethyl group, a normal or an isopropyl group, and a positive or a 2. XOR, third-party, 201229086, etc. The alkyl group (d) possessed by the repeating unit (α) may be a linear or branched alkyl group having a carbon number of j 15 , for example, methyl, or Isopropyl, normal, isomeric, second or third butyl, n- or isodecyl, cyclopentyl, n- or isohexyl, cyclohexyl, n- or heptyl, n- or isooctyl-ethylhexyl, Ortho- or isoindolyl, n- or iso-decyl, n- or iso- undecyl, n- or isododecyl, Ortho- or tridecyl, Ortho- or X-tetradecyl The base (4)' may also be a hydrogen atom of the above-mentioned alkyl group The above polyether-based (a)-substituted alkyl group. The thiophene repeating unit (α) of the substituted polythiophene (P) J in the present invention is more excellent in terms of conductivity. N is a repeating early (αΐ), a general formula (3), a seven nr^, a repeating unit represented by the following formula (2), or a repeating unit represented by the following formula (4) Repeated order indicated only (3 6 201229086

上述通式(2 )中之OR3及通式(3 )中之〇R6分別獨 立地表示氧基伸乙基或氧基伸丙基’就導電性之觀點而言 較佳為氧基伸乙基。 上述通式(2 )〜(4 )中之R4、R7及R8分別獨立地表 示碳數1〜12之直鏈或支鏈之烧基(例如,曱基、正或異 丙基、正、異、第二或第三丁基、正或異戊基、環戊基、 正或異己基、環己基、正或異庚基、正或異辛基、2 —乙基 己基、正或異壬基、正或異癸基、正或異十一烷基及正或 異十二烷基)。 於下述η為1以上之情形時’作為r4,就導電性之觀 7 201229086 點而言較佳為碳數1〜6之直鏈或支鏈之烷基’更佳為碳數 1〜4之直鍵或支鏈之烧基。 於η為0之情形時,作為R4 ’就導電性之觀點而言較 佳為碳數3〜12之直鏈或支鏈之烷基,更佳為碳數6〜12 之直鏈或支鏈之烷基。 於下述m為1以上之情形時,作為R7,就導電性之觀 點而言較佳為碳數1〜6之直鏈或支鏈之烷基,更佳為碳數 1〜4之直鏈或支鏈之烷基。 於m為0之情形時,作為R7,就導電性之觀點而言較 佳為碳數3〜12之直鏈或支鏈之烷基,更佳為碳數6〜12 之直鏈或支鏈之烷基。 作為R8,就溶劑溶解性及導電性之觀點而言較佳為碳 數3〜12之直鏈或支鏈之烷基,更佳為碳數6〜12之直鏈 或支鏈之烷基。 上述通式(3)中之R5表示碳數1〜4之直鏈或支鏈之 伸烷基(例如’亞曱基、伸乙基、1,2 —或1,3 —伸丙基、及 1,2 一、1,3 —、2,3 —或1,4 —伸丁基),就溶劑溶解性及導電 性之觀點而言較佳為碳數1〜3之直鏈或支鏈之伸烷基,更 佳為亞甲基或伸乙基。 上述通式(2)或(3)中之η及m分別獨立地為〇〜5 之整數。η就溶劑溶解性及導電性之觀點而言較佳為1〜5, 更佳為2〜m就溶劑溶解性及導電性之觀點而言較佳為〇 〜4,更佳為〇〜3。 本發明中之經取代之聚噻吩(P )可僅由上述噻吩重複 8 201229086 单位(α )所構成,亦可含有未經取代之〇塞吩重複單位。 、’·工取代之聚噻吩(Ρ )中之上述噻吩重複單位(α )之 a里就,合背丨’合解性之觀點而言,基於經取代之聚噻吩(ρ ) 之重量較佳為5〇〜100重量%,更佳為6〇〜1〇〇重量%,尤 佳為70〜100重量%。 本發月中之經取代之聚噻吩(ρ)可藉由相當於各重複 單位之單體的陰離子聚合或氧化聚合等公知之方法而合 成。 相當於上述噻吩重複單位(α )之單體,可列舉:噻 吩環之3位及/或4位經上述聚醚基(a)、上述烷氧基(b)、 上述烷氧基烷基(c)或上述烷基(d)取代且2位及5位經 鹵素原子取代之嗟吩等。 相當於未經取代之噻吩重複單位之單體,可列舉噻吩。 導電性組成物(A )中之經取代之聚噻吩(p )之含量 就/谷解性之觀點而言’基於導電性纽成物(A )之重量較佳 為〇,1〜20重量%,更佳為1〇〜6 〇重量。/(^於經取代之聚 嘍吩(P )之含量過多之情形時,產生凝聚物且塗佈性惡化, 故而欠佳。又,於經取代之聚噻吩(p )之含量過少之情形 時’難以形成均勻之導電被膜,故而欠佳。 本發明中之經取代之聚噻吩(p )之立體規則性 (Regioregularity : RR)通常為50%以上,就導電性之觀點 而吕較佳為80%以上,更佳為90%以上。 以下對本發明中之立體規則性(RR )之定義進行說明。 經取代之聚噻吩(P )之鍵結之種類如下述通式所示 9 201229086 般’有 ΗΤ- HT 鍵(B 1 )、ΤΤ - HT 鍵(B2 )、ΗΤ - HH 鍵(B3 )、 TT — HH鍵(B4)之4種。再者此處,HT為頭對尾、TT為 尾對尾、ΗΗ為頭對頭之簡稱。The OR3 in the above formula (2) and the oxime R6 in the formula (3) each independently represent an oxyethyl group or an oxypropyl group. From the viewpoint of conductivity, an oxyethyl group is preferred. R4, R7 and R8 in the above formulae (2) to (4) each independently represent a linear or branched alkyl group having 1 to 12 carbon atoms (for example, fluorenyl group, n- or isopropyl group, ortho- and di- , second or third butyl, n- or isopentyl, cyclopentyl, n- or iso-hexyl, cyclohexyl, n- or isoheptyl, n- or iso-octyl, 2-ethylhexyl, n- or isodecyl , or n-isodecyl, n- or iso- undecyl and n- or iso-dodecyl). When η is 1 or more, 'as r4, it is preferably a linear or branched alkyl group having a carbon number of 1 to 6 from the viewpoint of conductivity 7 201229086. More preferably, the carbon number is 1 to 4 a direct bond or a branched base. In the case where η is 0, R4' is preferably a linear or branched alkyl group having a carbon number of 3 to 12, more preferably a linear or branched chain having a carbon number of 6 to 12, from the viewpoint of conductivity. Alkyl group. When the following m is 1 or more, R7 is preferably a linear or branched alkyl group having 1 to 6 carbon atoms from the viewpoint of conductivity, and more preferably a linear chain having 1 to 4 carbon atoms. Or a branched alkyl group. When m is 0, R7 is preferably a linear or branched alkyl group having a carbon number of 3 to 12, more preferably a linear or branched carbon number of 6 to 12, from the viewpoint of conductivity. Alkyl group. R8 is preferably a linear or branched alkyl group having 3 to 12 carbon atoms from the viewpoint of solvent solubility and conductivity, and more preferably a linear or branched alkyl group having 6 to 12 carbon atoms. R5 in the above formula (3) represents a linear or branched alkyl group having 1 to 4 carbon atoms (for example, 'indenylene group, ethyl group, 1, 2 or 1, 3 group), and 1, 2, 1, 3, 2, 3 - or 1, 4 - butyl), preferably a linear or branched carbon number of 1 to 3 from the viewpoint of solvent solubility and conductivity The alkyl group is more preferably a methylene group or an ethyl group. η and m in the above formula (2) or (3) are each independently an integer of 〇~5. η is preferably from 1 to 5, more preferably from 2 to m, from the viewpoints of solvent solubility and conductivity, and is preferably from 观点 to 4, more preferably from 观点 to 3, from the viewpoint of solvent solubility and conductivity. The substituted polythiophene (P) in the present invention may be composed only of the above thiophene repeat 8 201229086 unit (α ), and may also contain an unsubstituted thiophene repeat unit. In the above-mentioned thiophene repeating unit (α) in the polythiophene (Ρ) substituted by the worker, the weight of the substituted polythiophene (ρ) is preferably from the viewpoint of the recombination property. It is 5 〇 to 100% by weight, more preferably 6 〇 to 1 〇〇% by weight, and particularly preferably 70 to 100% by weight. The substituted polythiophene (ρ) in the present month can be synthesized by a known method such as anionic polymerization or oxidative polymerization of a monomer corresponding to each repeating unit. The monomer corresponding to the above thiophene repeating unit (α) may, for example, be a 3-position and/or a 4-position of the thiophene ring via the above polyether group (a), the above alkoxy group (b), or the above alkoxyalkyl group ( c) or a porphin or the like in which the above alkyl group (d) is substituted and the 2nd and 5th positions are substituted with a halogen atom. The monomer corresponding to the unsubstituted thiophene repeating unit may, for example, be thiophene. The content of the substituted polythiophene (p) in the conductive composition (A) is preferably from 观点, 1 to 20% by weight based on the weight of the conductive derivative (A) from the viewpoint of the solubility. More preferably, it is 1〇~6 〇 weight. When the content of the substituted polythiophene (P) is too large, aggregates are formed and the coatability is deteriorated, which is not preferable. Further, when the content of the substituted polythiophene (p) is too small It is difficult to form a uniform conductive film, and thus it is not preferable. The regioregularity (RR) of the substituted polythiophene (p) in the present invention is usually 50% or more, and it is preferably 80 in terms of conductivity. % or more, more preferably 90% or more. The definition of the stereoregularity (RR) in the present invention will be described below. The type of the bond of the substituted polythiophene (P) is as shown in the following formula 9 201229086 ΗΤ - HT key (B 1 ), ΤΤ - HT key (B2), ΗΤ - HH key (B3), TT - HH key (B4). In addition, HT is head-to-tail and TT is tail. The tail and the head are the abbreviation of head to head.

上述4種鍵結形式之化學式中的r分別獨立地表示上 述聚醚基(a)、上述烷氧基(b)、上述烷氧基烷基(c)或 上述烷基(d)。 本發明中之經取代之聚噻吩(P )之立體規則性(RR ) 係以經取代之聚噻吩(P )中之HT— HT鍵(B 1 )之比例(% ) 加以定義’並藉由下述數學公式(1)而算出。 立體規則性(RR) = BlxlOO/ ( B1 + B2 + B3 + B4) ( 1 ) 其中,B1表示HT - HT鍵之個數,B2表示TT — HT鍵 之個數,B3表示HT — HH鍵之個數,B4表示TT — HH鍵之 個數。 具體而言,該等鍵所具有之質子係利用核磁共振(〗H ~ NMR )表示各自特有之化學位移(δ),因此可由與4種 鍵對應之化學位移中之尖峰之積分值而算出。 於具有以通式(3 )所表示之重複單位(α 3 )之聚噻 10 201229086 吩衍生物之情形時,具體而言表示為ΗΤ—HT鍵(Bl) : δ -6.98,ΤΤ- ΗΤ 鍵(Β2 ) : δ = 7.00,ΗΤ— ΗΗ 鍵(Β3 ) : δ =7.02,ΤΤ- ΗΗ 鍵(Β4): δ = 7·05。因此,對(Β1 )、( Β2)、 (Β3)、( Β4)特有之化學位移中之尖峰之積分值S1、S2、 S3、S4進行計算,根據(B1)特有之化學位移中之尖峰之 積分值S1相對於該積分值之和的比例(% )並利用下述數 學公式(2 )算出立體規則性(RR )。 立體規則性(rr ) = s 1 X 100/ ( s 1 + S2 + S3 + S4 ) ( 2 ) 再者,上述咕一 NMR之測定係使用測定機器:AVANcE iii4〇o型數位NMR[Bruker Bi〇Spin股份有限公司製造],於 貝J疋/谷劑.氘代氯仿(Deuter〇chi〇r〇f〇rm )、測定溫度: °C之條件下進行。 導電性高分子之經取代之聚噻吩(p)對作為摻雜劑之 三氧化硫錯合物供應電子’與摻雜劑一同形成電荷轉移錯 口物4電荷轉移錯合物作為電子之載體而表現導電性, 氧化硫錯合物之濃度越高越好,但若濃度過高,則導 電性降低。因1^,三氧化硫錯合物之使用量相對於經取代 之來塞吩(P)較佳為5〜3〇〇重量%,更佳為⑺〜重 乳化硫錯合物 路易斯驗之錯合物。秘,& ' 二氧化硫錯合物,可列舉氧斗 硫二垮烷錯合物、三氧 氧化 _ . ,IL 一氧戊%錯合物、三氧化硫-甲 醚錯合物、三氧化硫乙基 “甲 入IT醚錯σ物、二氧化硫二乙醚铒 合物等;醯胺—三氣仆技M A u at错 一匕石,,··錯合物,可列舉三氧化硫N,N—二 201229086 甲基甲醯胺錯合物等;—一 二氧化硫錯合物,可列舉=ϋ 化H定錯合物、三氧化硫 τ歹“—氧 胺錯合物、三氧化硫Ν 3 °、二氧化硫二甲 三氧化硫錯合物,可列夹一7 基胺錯合物等:硫驗- 化硫乙基曱硫_錯合物:=硫二甲卿合物、三氧 —氧化硫二乙基硫醚錯合物等。 Γ性之觀點而言較佳為醯胺-三氧化硫錯 :::胺-二氧化硫錯合物,於醯胺—三氧化硫錯合物中 氧化硫Ν,Ν—二甲基甲醯胺錯合物,於胺-三氧化 硫錯合物中更佳為三氧化硫。"錯合物。 本發明之導電性組成物(Α)含有三氧化硫錯合物作為 摻雜劑,可於不損害本發明之效果之範圍内進而含有其他 #雜劑及有機溶劑。 八他摻雜劑,例如可列舉:無機酸(硫酸及硝酸等)、 函離子類(蛾、漠及氯等)、自化物離子類(四氟侧酸及過 氣酸等)、醌化合物[氣冉酸、四氣對苯醌、對苯醌、對醌二 肟(quinone dioxime )、二氣二氰基醌(DDQ,r in the chemical formula of the above four bonding forms independently represents the above polyether group (a), the above alkoxy group (b), the above alkoxyalkyl group (c) or the above alkyl group (d). The stereoregularity (RR) of the substituted polythiophene (P) in the present invention is defined by the ratio (%) of the HT-HT bond (B 1 ) in the substituted polythiophene (P)' Calculated by the following mathematical formula (1). Stereo regularity (RR) = BlxlOO/ ( B1 + B2 + B3 + B4) ( 1 ) where B1 represents the number of HT-HT bonds, B2 represents the number of TT-HT bonds, and B3 represents HT-HH bonds The number, B4 represents the number of TT - HH keys. Specifically, since the protons possessed by these bonds represent their respective chemical shifts (δ) by nuclear magnetic resonance ("H ~ NMR"), they can be calculated from the integral values of the spikes in the chemical shifts corresponding to the four kinds of bonds. In the case of the polythio 10 201229086 phenanthrene derivative having the repeating unit (α 3 ) represented by the general formula (3), specifically, it is represented by a ΗΤ-HT bond (Bl): δ -6.98, ΤΤ-ΗΤ bond (Β2) : δ = 7.00, ΗΤ— ΗΗ key (Β3): δ = 7.02, ΤΤ- ΗΗ key (Β4): δ = 7·05. Therefore, the integral values S1, S2, S3, and S4 of the spikes in the chemical shifts specific to (Β1), (Β2), (Β3), and ((4) are calculated according to the peaks in the characteristic chemical shift of (B1). The ratio (%) of the integral value S1 to the sum of the integral values is used to calculate the stereoregularity (RR) using the following mathematical formula (2). Stereoregularity (rr ) = s 1 X 100/ ( s 1 + S2 + S3 + S4 ) ( 2 ) Furthermore, the above-mentioned NMR measurement was performed using a measuring machine: AVANcE iii4〇o type digital NMR [Bruker Bi〇 Made by Spin Co., Ltd., under the conditions of Yubei J疋/Valley. Deuterochloroform (Deuter〇chi〇r〇f〇rm) and measuring temperature: °C. The substituted polythiophene (p) of the conductive polymer acts as a dopant for the sulfur trioxide complex supply electron' together with the dopant to form a charge transfer errone 4 charge transfer complex as a carrier for electrons Conductivity is exhibited, and the higher the concentration of the sulfur oxide complex, the better, but if the concentration is too high, the conductivity is lowered. The amount of sulfur trioxide complex used is preferably 5 to 3 wt%, more preferably (7) to heavy emulsifying sulfur complex, in comparison with the substituted phenanthrene (P). Compound. Secret, & 'Sulphur dioxide complex, can be cited as oxygen thiodithioxane complex, trioxane _., IL-oxypentanol complex, sulfur trioxide-methyl ether complex, sulfur trioxide Ethyl "into IT ether sigma, sulphur dioxide diethyl ether chelate, etc.; guanamine - three gas servant MA u at wrong one stone,, · · complex, can be cited sulfur trioxide N, N - 2201229086 Methylformamide complex, etc.; - sulfur dioxide complex, which can be exemplified as ϋH complex, sulfur trioxide, — — — 氧 、 、 、, 三 三 Ν 3 °, Sulfur dioxide dimethyl sulphide sulphide complex, can be listed as a 7-amino complex, etc.: sulfur test - sulphur ethyl sulfonium sulphur _ complex: = thiol dimethyl sulphate, trioxo sulphur oxide Ethyl sulfide complex and the like. From the viewpoint of bismuth, it is preferably guanamine-sulphur trioxide:: amine-sulphur dioxide complex, sulphur oxide in decylamine-sulfur trioxide complex, Ν-dimethylformamide The compound is more preferably sulfur trioxide in the amine-sulfur trioxide complex. "Compound. The conductive composition (Α) of the present invention contains a sulfur trioxide complex as a dopant, and further contains other dopants and organic solvents insofar as the effects of the present invention are not impaired. Examples of the octane dopant include inorganic acids (sulfuric acid and nitric acid, etc.), functional ions (moth, desert chlorine, etc.), auto-ionic ions (tetrafluoro-acid and peroxyacid), and ruthenium compounds [ Gas phthalic acid, tetra-p-benzoquinone, p-benzoquinone, quinone dioxime, di-dioxanyl hydrazine (DDQ,

Dichlorodicyanoquinone )、對萘醌、蒽醌、氣蒽醌及對甲基 苯醌等(p-toluquinone)、經烷基取代之有機磺酸離子類(曱 基磺酸及十二烷基磺酸等)、環狀磺酸離子類(樟腦磺酸離 子等)、經烧基取代或未經取代之苯單或二績酸離子類(苯 磺酸、對曱苯磺酸、十二烷基苯磺酸及苯二磺酸等)、具有 1〜4個項酸基之萘績酸之經烧基取代離子類或未經取代離 子類(2 —萘磺酸及1,7 —萘二確酸等)、蒽績酸離子、蒽醌 磺酸離子、經烷基取代或未經取代之聯苯磺酸離子類(烷 12 201229086 基聯苯磺酸及聯苯二磺酸等)'及經取代或未經取代之芳香 族高分子磺酸離子類(聚苯乙烯磺酸及萘磺酸甲醛縮合物 等)。 其他摻雜劑之使用量相對於經取代之聚噻吩(P )較佳 為〇〜1100重量%,更佳為10〜600重量%。 本發明之導電性組成物(A )如上所述亦可進而含有有 機溶劑《將導電性組成物(A )塗佈於基板上之後,可視需 要藉由進行加熱處理而去除有機溶劑’製作導電被膜。作 為有機溶劑,為了獲得無沈澱物之均勻之溶液,Dichlorodicyanoquinone), p-toluquinone, alkyl-substituted organic sulfonic acid ions (mercapto sulfonic acid, dodecyl sulfonic acid, etc.) for naphthoquinone, anthracene, gas, and p-toluquinone , a cyclic sulfonic acid ion (camphorsulfonate ion, etc.), a substituted or unsubstituted benzene or a dibasic acid ion (benzenesulfonic acid, p-toluenesulfonic acid, dodecylbenzenesulfonic acid) And benzenedisulfonic acid, etc., a ketone-substituted ionic or unsubstituted ionic (2-naphthalenesulfonic acid and 1,7-naphthalene diacid, etc.) of a naphthoic acid having 1 to 4 acid groups. , acid ionic, sulfonium sulfonate, alkyl substituted or unsubstituted benzene sulfonate ion (alkane 12 201229086 bis benzene sulfonic acid and biphenyl disulfonic acid, etc.) and substituted or not Substituted aromatic polymer sulfonic acid ions (polystyrenesulfonic acid, naphthalenesulfonic acid formaldehyde condensate, etc.). The amount of the other dopant to be used is preferably from 〇1 to 1100% by weight, more preferably from 10 to 600% by weight, based on the substituted polythiophene (P). The conductive composition (A) of the present invention may further contain an organic solvent as described above. After the conductive composition (A) is applied onto a substrate, the organic solvent may be removed by heat treatment as needed. . As an organic solvent, in order to obtain a uniform solution free of precipitates,

對於經取代之《吩(P)之良溶劑與對於摻雜劑之良溶劑 混合而使用D 作為對於經取代之《吩(p)之良溶劑,可列舉碳數 1〜10之氣系、醯胺系、醚系、芳香族烴系、醇系、酮系及 硫系溶劑$,較佳者’可列舉氣仿、二氣甲烷、二甲基甲 醯胺二—f基料侧H夫喃(以下,簡稱為而)、 ’ 一氧戊環(1,3-diox〇lane)、曱笨、甲 美酮、 丙酮、曱基乙 土酮7 — 丁内酯、環戊酮、環己酮、_ 之混合Μ。 —甲基亞似該等 合有對於經取代之聚噻吩 聚噻吩(Ρ)之溶液中的上述良溶劑 0 99重量。/〇,更佳為5〇〜98重量〇/ 良溶劑與經取代之 量於溶液中較佳為 醇、2—丙醇 内酯及環戊酮等 、乙醇、2 — 對於摻雜劑之良溶劑,可列舉:甲醇、乙 醇Ν —曱基。比略咬酮、THF、7〜丁内 該等中,就溶解穩定性之觀點而言較佳為甲 13 201229086 丙醇及r一丁内酯。 混合有對於掺雜劑之良溶劑與推雜劑之溶液中的 良溶劑之含量於溶液中較佳為0〜99重量%,更以 98 重量 〇/0。 @ :>υ〜 於將經取代之聚。塞吩(Ρ)與播雜劑混合時,為了 :勻之溶液,較佳為分別調製經取代之聚噻吩⑺之㈣ 溶液及摻雜劑之溶劑溶液後將二者混合。 於使用本發明之導電性組成物⑷製造導電被膜時, 必需去除該等溶劑。於為沸點較低之溶劑之情形時, ^之自然乾燥、利用送風乾燥之加熱乾燥而去除溶劑,於 熱乾燥。 佳為利用減壓乾燥機之加 本發明之導電性組成物(Α)尤其適合於固體電 =電極。固體電解電容器係使用藉由對紹等之氧化被膜 仃姓刻而形成多孔性被膜並於其表面形成導電性高分子 ::製成,極(陰極)<電容器’塗佈包含導電性高分子 =物早體之乂刀散液之方法、或塗佈使用十二烧基苯磺 者為摻雜劑將導電性高分子H各溶解於溶劑中而成 ::::等先前之方法中存在如下問™之生產效 劑為U無法有效地提高電容器之容量,進而因摻雜 且腐蝕電極而引起耐電壓之下降或漏電流之增大。 相對於此’本發明之導電性組成物(Α)完全溶解於有 ^劑中’且導電性亦較高,故而可藉由簡便之步驟使導 電性高分子含浸於多孔體被膜而有效地提高電容器容量, 201229086 並且由於摻雜劑不為酸,故無腐蝕之虞。 於將本發明之導電性組成物(A )塗佈於基板後,進行 加熱處理’藉此可獲得耐電壓較高且漏電流較少之固體電 解電容器用電極。 對基板塗佈導電性組成物(A )之方法,可列舉:旋轉 塗饰法、滴注法、浸塗法及將基板含浸於導電性組成物(A ) 之方法等。又,作為基板,可列舉··塑膠、玻璃、金屬、 橡膠、陶瓷及紙等。 就導電性之觀點而言,對形成於基板表面之導電性組 成物(A)進行乾燥所獲得之膜之厚度較佳為〇〇5〜ι〇〇“ m,更佳為〇」〜5〇以m。若被膜薄於〇 〇5 "爪,則有時無法 獲知·充刀之導電性。又,若超過i 〇〇 # m,則產生於形成時 易出現裂縫或剝離等問題。 為了使用本發明之導電性組成物(A)獲得高導電性之 導電被膜’加熱處理溫度較佳為⑽〜19(rc,更佳為⑽ 〜17〇C。於為低於1G(rc^溫度之情形時,有時無法獲得 充刀之強度及導電性。χ,於為高於ΐ9〇。。之溫度之情形 時’有導電性惡化之可能性。 加熱時間係根據加熱溫度、導電性組成物(A)中之· 聚嗟吩(P)之濃度而適當選擇,通常為G·5〜8小時 :“ 1〜4小時。若加熱時間過短’則有時由上述導電小 組成物…所獲得之導電被膜之導電性不充分。導電丨- 酸,導電性組成物(A)由於所含有之摻雜劑不』 ' 性,並且導電性優異,可僅藉由簡便之2 15 201229086 佈製作導電被膜,故而有ffl。尤其是可藉由簡便之步驟For the substituted "Phenyl (P) solvent and the good solvent for the dopant, D is used as the good solvent for the substituted "Ph" (p), and the carbon number of 1 to 10, 醯An amine system, an ether system, an aromatic hydrocarbon system, an alcohol system, a ketone system, and a sulfur solvent. The preferred ones are exemplified by gas-like, di-methane, and dimethylformamide-f-based materials. (hereinafter, abbreviated as), '1,3-diox〇lane, 曱 、, methyl ketone, acetone, decyl ketone 7 - butyrolactone, cyclopentanone, cyclohexanone Mixed with _. The methyl group is similar to the above-mentioned good solvent in the solution of the substituted polythiophene polythiophene (Ρ). / 〇, more preferably 5 〇 ~ 98 〇 / good solvent and substituted amount in the solution is preferably alcohol, 2-proprolactone and cyclopentanone, ethanol, 2 - good for dopants The solvent may, for example, be methanol or ethanol hydrazine-fluorenyl. In the case of a slightly biting ketone, THF, or a butyl group, it is preferably a 13 201229086 propanol and r-butyrolactone from the viewpoint of solubility stability. The content of the good solvent in the solution in which the dopant and the dopant are mixed with the dopant is preferably from 0 to 99% by weight in the solution, more preferably 98% by weight/0. @ :>υ~ will be replaced by the poly. When the phenotype is mixed with the dopant, it is preferred to separately prepare a solution of the (4) solution of the substituted polythiophene (7) and a solvent solution of the dopant, and then mix the two. When a conductive film is produced using the conductive composition (4) of the present invention, it is necessary to remove the solvents. In the case of a solvent having a relatively low boiling point, it is naturally dried, dried by heating and drying by air blowing, and the solvent is removed and dried by heat. Preferably, the conductive composition (Α) of the present invention is particularly suitable for a solid electric electrode. In the solid electrolytic capacitor, a porous film is formed by etching a film of a oxidized film, and a conductive polymer is formed on the surface of the solid electrolytic capacitor: a pole (cathode) is formed, and a capacitor is coated with a conductive polymer. The method of dispersing the liquid in the early body or the method of coating the conductive polymer H in a solvent using a dodecyl benzene sulfonate as a dopant: ::: As follows, the production efficiency of TM is U, which cannot effectively increase the capacity of the capacitor, and further causes a decrease in withstand voltage or an increase in leakage current due to doping and corrosion of the electrode. In contrast, the conductive composition of the present invention is completely dissolved in a solvent and has high conductivity. Therefore, the conductive polymer can be effectively impregnated into the porous film by a simple procedure. Capacitor capacity, 201229086 and because the dopant is not acid, there is no corrosion. After the conductive composition (A) of the present invention is applied onto a substrate and then subjected to heat treatment, an electrode for a solid electrolytic capacitor having a high withstand voltage and a small leakage current can be obtained. Examples of the method of applying the conductive composition (A) to the substrate include a spin coating method, a dropping method, a dip coating method, and a method of impregnating the substrate with the conductive composition (A). Further, examples of the substrate include plastic, glass, metal, rubber, ceramics, and paper. From the viewpoint of conductivity, the thickness of the film obtained by drying the conductive composition (A) formed on the surface of the substrate is preferably 〇〇5 to 〇〇"m, more preferably 〇" to 5 〇. In m. If the film is thinner than 〇 & 5 " claws, the conductivity of the filling knife may not be known. Further, when i 〇〇 # m is exceeded, problems such as cracking or peeling are likely to occur at the time of formation. In order to obtain a highly conductive conductive film using the conductive composition (A) of the present invention, the heat treatment temperature is preferably (10) to 19 (rc, more preferably (10) to 17 〇C. It is lower than 1 G (rc^ temperature). In the case of the case, the strength and conductivity of the filling blade may not be obtained. χ, when the temperature is higher than ΐ9〇, the conductivity may deteriorate. The heating time is based on the heating temperature and conductivity. The concentration of the polythiophene (P) in the substance (A) is appropriately selected, and is usually G·5 to 8 hours: “1 to 4 hours. If the heating time is too short, the conductive small composition may be used... The conductivity of the obtained conductive film is insufficient. The conductive bismuth-acid and the conductive composition (A) are excellent in conductivity because of the dopant contained in the conductive composition (A), and can be simply used by the simple 2 15 201229086 cloth. Making a conductive film, so there is ffl. Especially by simple steps

而使導電Η古八7 A L 同刀子含浸於多孔質被膜中,從而有效地提高 _曰_ 合里’可製作耐電壓較高且漏電流較少之固體電解 電谷器,故而有用。 [實施例] 乂下’藉由貫施例及比較例進一步說明本發明,但本 發明並不限定於該等。以下,份表示重量份。 〈製造例1&gt; ··聚[3 一(1,4,7,1〇一四氧十一烷基)噻吩 (P— 1)之合成 (1) 3 (1,4,7,1 〇 —四氧十一炫基)嘆吩之合成: 使氫化鈉(以6〇重量%之濃度分散於石蠟中而成者) 6·〇份分散於N,N —二曱基曱醯胺5〇份,並於其中滴加三乙 二醇單曱醚36.9份。反應溶液發泡並產生白濁。發泡結束 後,於反應溶液中依序加入3 —溴噻吩24·5份及溴化銅(工) 2.〇份。將反應溶液加熱至i 1〇〇c,使其反應2小時。反應 結束後,放置冷卻至室溫,加入lm〇1/L之氣化錄水溶液5〇 份,使用乙酸乙酯50份將其轉移至分液漏斗中,其後分離 水層。進而使用蒸餾水30份對有機層進行2次洗淨後,餾 去乙酸乙酯,獲得3~(l,4,7,10 —四氧十一烷基)噻吩34 〇 份。 (2) 2’5—二漠一3 —(1,4,7,1〇 —四氧十一烷基)嗔吩之 合成: 將上述3—(1,4,7,1〇—四氧十一烷基)噻吩7 4份及n — 溴琥珀醢亞胺(brom〇succinimide) 1〇 7份溶解於thf 16 201229086 份中,於室溫反應2小時。使用乙酸乙酯5 0份並以玻璃過 濾器去除沈澱物,餾去THF及乙酸乙酯。使用矽膠管柱將 所獲得之混合物純化,藉此獲得2,5—二溴一 3— (1,4,7,10 —四氧十一烷基)噻吩10.5份。 (3)聚[3 —(1,4,7,10—四氧十一烷基)噻吩]之合成: 於將上述2,5_二溴一3 — (1,4,7,10—四氧十一烷基)噻 吩8.1份溶解於thF 150份之後,加入lmol/L之甲基溴化 鎂THF溶液21份,於75Ό反應30分鐘。於該反應溶液中 加入[1,3—雙(二苯基膦)丙烷]—二氣化鎳(II) 0.1份,於 7 5 °C之狀態下進而反應5小時。於將反應溶液放置冷卻至 室溫後’加入曱醇20份。餾去溶劑後,將反應混合物轉移 至索氏萃取器中,使用曱醇150份及己烷150份依序進行 洗淨。最後使用氯仿1 50份萃取殘留物,餾去溶劑而獲得 聚[3 — (1,4,7,10 —四氧-J 烧基)°塞吩](P — 1 ) 3 _ 1 份。藉 由上述使用1H—NMR之方法算出之立體規則性為96.3%。 &lt; 製造例 2&gt; :聚[3—(1,4,7,10,13,16,19—十七氧二十 烧基(Heptaoxaeicosyl))嗟吩](p—2)之合成 於製造例1之(1)中,將三乙二醇單曱醚變更為六乙 二醇單曱醚(東京化成工業股份有限公司製造),除此以外 進行與製造例1相同之實驗操作,獲得立體規則性為95.1% 之聚[3—(1,4,7,10,13,16,19~十七氧二十烷基)噻吩] 2.9 份。 再者,於將三乙二醇單曱醚變更為六乙二醇單甲醚 時,以反應成分之莫耳比及非反應成分(溶劑等)之重量 17 201229086 比與製造例1中之情況相同之方式調整各原料ι量而進行 實驗操作。 &lt;製造例3&gt; :聚(3 —庚氧基嗔吩)(p 一 3)之合成 於製造例1之(1)中,將三乙二醇單甲醚變更為1 — 庚醇,除此以外進行與製造例1相同之實驗操作,獲得立 體規則性為95.4%之聚(3 —庚氧基噻吩p一 3 ) 2.7份。 &lt;製造例4&gt; :聚{3—(2,5—二氧庚基)噻吩} (P—4) 之合成 (1) 3 —溴甲基《塞吩之合成·· 將3 —甲基噻吩[東京化成工業股份有限公司製造]5份 (50.9mmol)、N—溴琥珀醯亞胺 9.97 份(56.0mmol)、過 氧化二苯甲醯[東京化成工業股份有限公司製造]〇.12份 (〇.5〇mmol)溶解於苯30份後,升溫至1〇〇。匚並反應4小 時。反應結束後,放置冷卻至室溫,加入1M之硫代硫酸鈉 水溶液30份並轉移至分液漏斗中,其後分離水層。進而使 用蒸餾水30份對有機層進行2次洗淨後,餾去苯而獲得3 —演曱基嗟喻6.32份(35.7mmol)。 (2) 3—(2,5—二氧庚基)噻吩之合成:Therefore, it is useful to make the conductive Η 八 7 7 A A 同 同 同 同 同 含 含 含 含 含 含 含 含 含 含 含 含 含 含 ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ ’ [Examples] The present invention will be further described by way of examples and comparative examples, but the present invention is not limited thereto. Hereinafter, parts represent parts by weight. <Manufacturing Example 1>····································································· Synthesis of tetrasyl 11 base): Sodium hydride (which is dispersed in paraffin at a concentration of 6 〇 wt%) 6 〇 Disperse in N,N-didecylamine 5 〇 And 36.9 parts of triethylene glycol monoterpene ether was added dropwise thereto. The reaction solution foamed and became cloudy. After the completion of the foaming, 24 parts of 3-bromothiophene and copper bromide (work) were added to the reaction solution in this order. The reaction solution was heated to i 1 〇〇c and allowed to react for 2 hours. After completion of the reaction, the mixture was cooled to room temperature, and 5 parts of a liquefied aqueous solution of lm 〇 1 / L was added thereto, and the mixture was transferred to a separating funnel using 50 parts of ethyl acetate, and then the aqueous layer was separated. Further, the organic layer was washed twice with 30 parts of distilled water, and then ethyl acetate was evaporated to give 3 (1,4,7,10-tetraethoxyundecyl)thiophene. (2) Synthesis of 2'5-two deserts-3-(1,4,7,1〇-tetraoxyundecyl) porphin: The above 3-(1,4,7,1〇-tetraoxide 7 parts of undecyl)thiophene and n-bromosuccinimide (brom〇succinimide) 1〇7 parts were dissolved in thf 16 201229086 parts and reacted at room temperature for 2 hours. 50 parts of ethyl acetate was used and the precipitate was removed with a glass filter, and THF and ethyl acetate were evaporated. The obtained mixture was purified using a silica gel column, whereby 10.5 parts of 2,5-dibromo-3-(1,4,7,10-tetraoxaundecyl)thiophene was obtained. (3) Synthesis of poly[3-(1,4,7,10-tetraoxyundecyl)thiophene]: The above 2,5-dibromo-3-(1,4,7,10-four After dissolving 8.1 parts of oxygen undecyl)thiophene in 150 parts of thF, 21 parts of a 1 mol/L methyl magnesium bromide THF solution was added, and the mixture was reacted at 75 Torr for 30 minutes. To the reaction solution, 0.1 part of [1,3-bis(diphenylphosphino)propane]-dicarburized nickel (II) was added, and further reacted at 75 ° C for 5 hours. After the reaction solution was left to cool to room temperature, 20 parts of sterol was added. After distilling off the solvent, the reaction mixture was transferred to a Soxhlet extractor, and washed with 150 parts of decyl alcohol and 150 parts of hexane. Finally, the residue was extracted with 150 parts of chloroform, and the solvent was evaporated to give a poly[3 - (1,4,7,10-tetraoxy-J-alkyl) ° thiophene] (P - 1 ) 3 _ 1 part. The stereoregularity calculated by the above method using 1H-NMR was 96.3%. &lt;Production Example 2&gt;: Synthesis of poly[3-(1,4,7,10,13,16,19-heptaoxaeicosyl) porphin] (p-2) in a production example In (1), the same experimental operation as in Production Example 1 was carried out except that triethylene glycol monoterpene ether was changed to hexaethylene glycol monoterpene ether (manufactured by Tokyo Chemical Industry Co., Ltd.) to obtain a stereoscopic rule. The content was 95.1% of poly[3-(1,4,7,10,13,16,19-heptadecanecosyl)thiophene] 2.9 parts. Further, when triethylene glycol monoterpene ether is changed to hexaethylene glycol monomethyl ether, the molar ratio of the reaction component and the weight of the non-reactive component (solvent, etc.) 17 201229086 ratio and the case of the production example 1 The experimental operation was carried out by adjusting the amount of each raw material in the same manner. &lt;Production Example 3&gt;: Synthesis of poly(3-heptyloxythiophene) (p-3) In (1) of Production Example 1, triethylene glycol monomethyl ether was changed to 1 - heptanol, except The same experimental procedure as in Production Example 1 was carried out, and 2.7 parts of poly(3-heptoxythiophene p-3) having a stereoregularity of 95.4% was obtained. &lt;Production Example 4&gt;: Synthesis of poly{3-(2,5-dioxaheptyl)thiophene} (P-4) (1) 3 -Bromomethyl "Synthesis of phenotype·· 3 - Methyl group Thiophene [manufactured by Tokyo Chemical Industry Co., Ltd.] 5 parts (50.9 mmol), N-bromosinium imine 9.97 parts (56.0 mmol), diphenylmethyl hydrazine peroxide [manufactured by Tokyo Chemical Industry Co., Ltd.] 〇.12 parts (〇5〇mmol) After dissolving in 30 parts of benzene, the temperature was raised to 1 Torr.匚 and react for 4 hours. After completion of the reaction, the mixture was cooled to room temperature, and a 1 M aqueous sodium thiosulfate solution was added and transferred to a separating funnel, and then the aqueous layer was separated. Further, the organic layer was washed twice with 30 parts of distilled water, and then benzene was distilled off to obtain 3.32 parts (35.7 mmol). (2) Synthesis of 3-(2,5-dioxyheptyl)thiophene:

、將2乙氧基乙醇3.54份(39.3mm〇l)溶解於THF 、 於其中加入氫化鈉(分散於60%石蠟)。將上述3 、甲基塞力6.32份(35_7mmol)溶解於THF 15份,經3.54 parts (39.3 mm 〇l) of 2 ethoxyethanol was dissolved in THF, and sodium hydride (dispersed in 60% paraffin) was added thereto. The above 3, methyl plug force 6.32 parts (35_7mmol) was dissolved in 15 parts of THF,

Si:力二:升溫i ^並反應4小時。反應結束後,: 後分離水層Γ進Γ蒸射3G份並轉移至分液漏斗中, 進而於使用蒸餾水30份對有機層進行2次: 18 201229086 淨後,餾去THF並使用妙膠管柱將所獲得之混合物純化, 藉此獲得3 —(2,5 —二氧庚基)噻吩5.68份(3〇 5mm〇1)。 (3) 2,5—二溴一3 —(2,5—二氧戊基)噻吩之合成: 將上述3 —(2,5—二氧庚基)噻吩5.68份(3〇 5mm〇1) 及N_邊號ί白酿亞fe 11.9伤(67.1mmol)溶解於THF中, 於室溫反應2小時。使用乙酸乙酯50份並以玻璃過渡器去 除沈版物,顧去THF及乙酸乙g旨。使用碎膠管柱將所择·得 之混合物純化,藉此獲得2,5 —二溴—3 — (2,5 一二氧庚基) 噻吩 8.11 份(23.6mmol)。 (4) 聚{3 —(2,5—二氧庚基)噻吩}之合成: 於將上述2,5 —二溴一 3 — (2,5 -二氧庚基)噻吩811份 (23.6mmol )溶解於THF30份後,加入甲基漠化錢THF溶 液25份,於75 °C反應30分鐘。於該反應溶液中加入[^3 ―雙(*·-本基鱗)丙院]—-一鼠化錄(II) 0.127份,於7 5 °C之 狀態下進而反應2小時。於將反應溶液放置冷卻至室溫後, 加入甲醇5份。將反應混合物轉移至索氏萃取機中,使用 甲醇1 5 0份及己烧1 5 0份依序進行洗淨。最後使用氣仿15 〇 份萃取殘留物並餾去溶劑’而獲得立體規則性為94.6%之聚 {3 — (2 — 5 —二氧庚基)噻吩} (P—4) 2.85 份。 &lt;製造例5&gt; :聚(3--f&quot;二焼基°塞吩)(P—5)之合成Si: Force 2: Raise i ^ and react for 4 hours. After the reaction was completed, the separated aqueous layer was poured into a 3 G portion and transferred to a separatory funnel, and the organic layer was further subjected to two times using 30 parts of distilled water: 18 201229086 After the net, the THF was distilled off and the column was used. The obtained mixture was purified, whereby 5.68 parts of 3-(2,5-dioxaheptyl)thiophene (3〇5 mm〇1) was obtained. (3) Synthesis of 2,5-dibromo-3-(2,5-dioxopentyl)thiophene: 5.68 parts of the above 3-(2,5-dioxoheptyl)thiophene (3〇5mm〇1) And N_edge number ί 白亚亚fe 11.9 wound (67.1 mmol) was dissolved in THF and reacted at room temperature for 2 hours. 50 parts of ethyl acetate was used and the plate was removed with a glass transitioner, taking care of THF and acetic acid. The selected mixture was purified using a gel column to obtain 8.11 parts (23.6 mmol) of 2,5-dibromo-3-(2,5-dioxoheptyl)thiophene. (4) Synthesis of poly{3 -(2,5-dioxaheptyl)thiophene}: 811 parts (23.6 mmol) of the above 2,5-dibromo-3-(2,5-dioxoheptyl)thiophene After dissolving in 30 parts of THF, 25 parts of methyl oxalate THF solution was added, and the mixture was reacted at 75 ° C for 30 minutes. To the reaction solution, 0.13 parts of [^3-bis(*·-base scale) propylidene]--one mouse chemistry (II) was added, and further reacted at 75 ° C for 2 hours. After the reaction solution was left to cool to room temperature, 5 parts of methanol was added. The reaction mixture was transferred to a Soxhlet apparatus, and washed with 150 parts of methanol and 150 parts of hexane. Finally, the residue was extracted with 15 parts of a gas mixture and the solvent was distilled off to obtain 2.85 parts of poly{3 - (2 - 5 -dioxyheptyl)thiophene} (P-4) having a stereoregularity of 94.6%. &lt;Production Example 5&gt;: Synthesis of poly(3--f&quot;dimercaptothiophene) (P-5)

於製造例1之(3 )中,將2,5 —二溴~ 3 — (i,4,7,10 — 四氧十一烷基)噻吩變更為2,5_二溴一3—十二烷基噻吩 (Aldrich公司製造)’除此以外進行與製造例1相同之實驗 操作,獲得立體規則性為96.4%之聚(3 —十二院基σ塞吩)(P 19 201229086 —5 ) 3.5 份。 &lt;實施例1〜1 6 &gt; 調配表1中所記載之調配份數的製造例1〜5所獲得之 經取代之聚噻吩(P— 1)〜(P—5)、表1中所示之三氧化 硫錯合物及有機溶劑,藉此獲得本發明導電性組成物(A — 1)〜(A— 16)。 20 201229086 【1^】 α-.ν) 5sq1 UJV) 孓8- (τ·ν) (9I-V) 0.1In (3) of Production Example 1, 2,5-dibromo~ 3 - (i,4,7,10-tetraoxyundecyl)thiophene was changed to 2,5-dibromo- 3-12 The alkyl thiophene (manufactured by Aldrich Co., Ltd.) was subjected to the same experimental procedure as in Production Example 1 to obtain a poly(3- 12-yard σ-septene) having a stereoregularity of 96.4% (P 19 201229086 - 5 ) 3.5 Share. &lt;Examples 1 to 1 6 &gt; The substituted polythiophenes (P-1) to (P-5) obtained in Preparation Examples 1 to 5 prepared in Table 1 were prepared, and Table 1 The sulfur trioxide complex compound and the organic solvent are shown, whereby the conductive compositions (A-1) to (A-16) of the present invention are obtained. 20 201229086 【1^】 α-.ν) 5sq1 UJV) 孓8- (τ·ν) (9I-V) 0.1

LZ ε.ζε ·0 •z ΒLZ ε.ζε ·0 •z Β

'9S ΙΨΌ 000s 3 οε -- 5 9.S9 〇 〇 (-IV) -车楗*1 (-IV) -5&quot;ν (-丨 V) (-IV) -$省扣 οτν) -- (ΟΙ-ν) ΟΙ518·1 (6-ν) 65辑扣 (S-V) ~本18·* α-ν)η (9-ν) 95遥私 (S-V) ΟΙ (了&lt;) (ε-ν) U-V) Μ$&quot;ν'9S ΙΨΌ 000s 3 οε -- 5 9.S9 〇〇(-IV) - rut*1 (-IV) -5&quot;ν (-丨V) (-IV) -$省扣οτν) -- (ΟΙ -ν) ΟΙ518·1 (6-ν) 65 series buckle (SV) ~ Ben 18·* α-ν)η (9-ν) 95 遥私 (SV) ΟΙ (了&lt;) (ε-ν) UV ) Μ$&quot;ν

0—v) -IK (g-d) —mm—)— (ε—d) u-d) (-'Id)0-v) -IK (g-d) —mm—)— (ε—d) u-d) (-'Id)

Js Φ- «-« -4¾ 5 •s -.9 〇 〇 〇 〇 3Js Φ- «-« -43⁄4 5 •s -.9 〇 〇 〇 〇 3

LX 066 'οεLX 066 'οε

Is •2&quot; 〇 〇 -&gt; - 1 066 ο.ζε 62 9Ί&quot; 〇 〇 z&quot; '0 0·66 ι·6κ 〇 〇 0mIs •2&quot; 〇 〇 -&gt; - 1 066 ο.ζε 62 9Ί&quot; 〇 〇 z&quot; '0 0·66 ι·6κ 〇 〇 0m

LI ns 8053 〇 〇 ο-ει 〇 〇 β 5 -- 12 〇 〇 6·ε L-l 6·Ι β 〇 〇 ? 0nLI ns 8053 〇 〇 ο-ει 〇 〇 β 5 -- 12 〇 〇 6·ε L-l 6·Ι β 〇 〇 ? 0n

LI •3ε εε- me 〇 〇 - 2LI •3ε εε- me 〇 〇 - 2

寸-I -6- 〇 〇 psz 56.0 9.9s 〇 〇 ττ L-z 5 !·εο々 〇 〇 1 •6 6-0 ri 〇 〇 -&gt; - L-l 0- &lt;β 〇 〇 oe - 若咖ff 珀»-ΛΙζ·Ν lt?q5w ~&quot;'f 爷ssd/loa3d 珐8^!4»-农 ϊίν^Μ--Ι I5ch丨卜 嗆宇硪6-—2 svlii *钕 (ετ/)6*8 (Ε3/$)φ^* (ΖΗ o'-/J^)1^1^^^ (Λ)蝴铗絮 OOI/GE)85^»5 (φ 蝌1!每 |汝尨_*| e 201229086 &lt;比較例1〉 調配經取代之聚噻吩(p — 1) 1 .〇份、氣冉酸0·3份及 作為有機溶劑之1,3 —二氧戊環30.0份,藉此獲得比較用導 電性組成物(A' — 1 )。 &lt;比較例2 &gt; 將聚嗟吩之水分散體之已知之「PEDOT/PSS」 (H.C.Starck公司製造之Baytro —P;使3,4 —乙缔二氧塞吩 於高分子量聚苯乙烯磺酸水溶液中聚合而成之導電性聚合 物)直接用作比較用導電性組成物(A· — 2 ) » &lt;比較例3 &gt; 調配經取代之聚噻吩(P — 1) 1.0份、對曱苯磺酸鐵2.7 份以及作為有機溶劑之1,3—二氧戊環32.3份及曱醇8.4 份,藉此獲得比較用導電性組成物.(A’ 一 3 )。 使用實施例1〜16之導電性組成物(A — 1 )〜(A_ 16) 及比較用導電性組成物(A’ 一 1 )〜(A’ 一 3 )製作導電被膜, 並藉由下述方法進行導電性之評價。將結果示於表i。 [導電被膜之製作方法] 使用刮刀將實施例1〜1 6之導電性組成物(A —丨)〜 (A — 16)及比較用導電性組成物(A,— n〜 J 、A — 3 )於 玻璃基板上塗佈成3cmx7Cm之長方形圖案,於室溫減壓乾 燥3〇分鐘後,於17η:使用加熱板加熱60分鐘而:得 被膜。 [導電性評價方法] 依據JIS Κ 7 194「利用導電性塑膠之四輕 休怎ΐ法之電阻率 22 201229086 試驗方法」測定所獲得之導電被膜之表面電阻。 繼而’使用雷射顯微鏡(Keyence公司製造VK- 87〇0 ) 測定導電被膜之膜厚,由表面電阻及膜厚算出導電被膜之 導電率。 將實施例1〜16之導電性組成物(A—丨)〜(A— 16) 及比較用導電性組成物(A.— 丨)〜(A,_3) 1〇mL放入玻 璃製谷器中使附有ITO之玻璃基板(icmxicmxO.lmm) 浸潰於該溶液中並將玻璃容器密閉。在保管溫度25。〇、保 管時間為1 50小時之條件下保管後,取出附有IT〇之玻璃 基板,並以THF洗淨。利用顯微鏡(Keyence股份有限公 司製造之數位顯微鏡VHX )觀察洗淨後之附有ιτ〇之玻璃 基板之ΙΤΟ表面的腐蝕狀態,根據下述基準進行評價。將 其結果不於表1。 &lt;腐钮性評價基準&gt; 〇 (未見腐♦虫) χ (可見腐蝕) 々表1所* ’本發明之導電性組成物顯示無腐敍性。 [電容器特性之評價方法] (1)陽極上之介電體膜之製作 、將作為陽極金屬之銘触刻羯(尺寸為4x3.3mm)浸潰 :3重量%之己二酸銨水溶液,使用怪定電流怪定電壓電源 :置於0.53mA/see之條件下使電壓自Q v上升至㈣後, :加4。v之怪定電壓4〇分鐘而進行化成處理,於該銘蝕刻 R表面形成由氧化被㈣成之介電體膜。藉由去離子水 23 201229086 之流水對其進行Η)分鐘之洗淨後,在lQ5t乾燥$分鐘, 製作由陽極金屬及介電體膜構成之陽極。將所獲得 浸潰於上述己:㈣水溶液中,並於_z進行靜電電六 測定,將該值即4.2 &quot; F設為理論靜電電容。 谷 (2) 固體電解電容器用電極之製作 將陽極浸潰於導電性組成物(A — 〈 A— 16)及(A, 〜Ad)中,於取出後’在室溫進行減壓乾燥% 分鐘,藉此形成電解質層而製作固體電解電容器用電極。 (3) 電解電容器之製作 於上述所獲得之電解質層±塗佈碳焚[日本石墨股份有 限公司製造之「Varniphite Fu」]並使其乾燥後,進而塗佈 銀漿[日本石墨股份有限公司製造之「EveryGhmME」]並使 其乾燥,而形成陰極。自銀漿中拉出引線連接端子。 (4 )測定及評價 以LCR測定計測定所獲得之電解電容器於12〇Hz之靜 電電容及於100 kHz之内部電阻,並根據下述基準評價漏電 之有無及耐電壓。 &lt;漏電之評價基準&gt; , 於以LCR測定計進行測定時,將漏電流未降低而無法 測定靜電電容、内部電阻之情況設為χ,將漏電流降低而能 夠測定靜電電容、内部電阻之情況設為〇。 &lt;耐電壓之評價基準&gt; 使用直流電源裝置[高砂製作所製造之GP0650 — 05R] 於0.2mA之低電流模式施加電壓,進行自動升壓,將電壓 24 201229086 下降時之電壓設為耐電壓。 之導電性組成物之固體電解電容器可於維 必需之較低之内部電阻之情況下獲得接近 4.2 μ F )之值。相對於此,於使用比較例1 之電容器’由於摻雜劑為酸,故而於電極 漏電較大而無法測定。又,於使用比較例2 剛因放電而急迷 使用本發明 持作為電容器所 理論靜電電容( 之導電性組成物 内部產生腐触, =體電解電容器用導電性組成物之電容器,由於導電性 尚分子作為分散體而存在於溶液内,&amp;而於空隙内部引起 土而,、,、法充刀含次導電性高分子。因此内部電阻較高, 並且僅獲得理論靜電電容之1/10左右。於比較例3,容量 不足且内部電阻亦較大。又,耐電壓與實施例i〜i 6相比 亦較低β 如於表1所示,本發明之導電性組成物顯示較高之導 電性。 本發明之導電性組成物(Α)由於腐蝕性較小,故可對 易產生腐蝕之金屬等進行塗佈,並且由於其導電被膜為高 導電性,故可期待應用於各種導電功能材料。尤其是作為 固體電解電容器用電極有用。 【圖式簡單說明】 益 【主要元件符號說明】 益 25Inch-I -6- 〇〇psz 56.0 9.9s 〇〇ττ Lz 5 !·εο々〇〇1 •6 6-0 ri 〇〇-&gt; - Ll 0- &lt;β 〇〇oe - If 咖 珀»-ΛΙζ·Ν lt?q5w ~&quot;'f ssd/loa3d 珐8^!4»-农ϊίν^Μ--Ι I5ch丨卜呛宇硪6-—2 svlii *钕(ετ/)6* 8 (Ε3/$)φ^* (ΖΗ o'-/J^)1^1^^^ (Λ)Butterfly OOI/GE)85^»5 (φ 蝌1! every |汝尨_*| e 201229086 &lt;Comparative Example 1> Preparation of substituted polythiophene (p-1) 1 oxime, 0. 3 parts of gas phthalic acid and 30.0 parts of 1,3-dioxolane as an organic solvent, thereby obtaining Comparative conductive composition (A'-1). <Comparative Example 2 &gt; Known "PEDOT/PSS" of an aqueous dispersion of polybenzazole (Baytro-P manufactured by HC Starck; 3, 4 - Conductive polymer obtained by polymerizing ethylene dioxetane in a high molecular weight polystyrene sulfonic acid aqueous solution) is directly used as a comparative conductive composition (A·-2) » &lt;Comparative Example 3 &gt; 1.0 part of substituted polythiophene (P-1), 2.7 parts of p-p-benzenesulfonate, 32.3 parts of 1,3-dioxolane as organic solvent, and 8.4 parts of decyl alcohol Thus, a comparative conductive composition was obtained. (A' to 3) The conductive compositions (A-1) to (A_16) of Examples 1 to 16 and the comparative conductive composition (A'-1) were used. (A'-3) A conductive film was produced, and the conductivity was evaluated by the following method. The results are shown in Table 1. [Method for Producing Conductive Film] The conductivity of Examples 1 to 16 was measured using a doctor blade. The composition (A - 丨) ~ (A - 16) and the comparative conductive composition (A, - n~ J , A - 3 ) were applied to a glass substrate to have a rectangular pattern of 3 cm x 7 cm, and dried at room temperature under reduced pressure. After 3 minutes, at 17 η: heating using a hot plate for 60 minutes to obtain a film. [Electrical evaluation method] According to JIS Κ 7 194 "Resistance of a conductive plastic using a resistive method 22 201229086 test method" The surface resistance of the obtained conductive film was measured. Then, the film thickness of the conductive film was measured using a laser microscope (VK-87〇0 manufactured by Keyence Corporation), and the conductivity of the conductive film was calculated from the surface resistance and the film thickness. Conductive composition of ~16 (A-丨)~(A-16) Comparative conductive composition (A.—丨)~(A,_3) 1〇mL was placed in a glass granulator to immerse the ITO-attached glass substrate (icmxicmxO.lmm) in the solution and the glass container Closed. Store at a temperature of 25. After storing and maintaining the tube for 150 hours, remove the glass substrate with IT〇 and wash it with THF. The corrosion state of the surface of the ruthenium-attached glass substrate after washing was observed with a microscope (digital microscope VHX manufactured by Keyence Co., Ltd.), and evaluated according to the following criteria. The results are not shown in Table 1. &lt;Corrosion evaluation criteria&gt; 〇 (No worms were observed) χ (visible corrosion) 々 Table 1 * The conductive composition of the present invention showed no rotification. [Method for Evaluating Capacitor Characteristics] (1) Preparation of a dielectric film on an anode, impregnation as an anode metal (size: 4×3.3 mm): 3 wt% aqueous ammonium adipate solution, used Strange current clamp voltage supply: put the voltage from Q v to (4) under the condition of 0.53mA/see, add: 4. The formation voltage of the voltage is 4 〇 minutes, and the surface of the R surface is etched to form a dielectric film formed by oxidation. After washing with deionized water 23 201229086 for Η), it was dried for 1 minute at lQ5t to prepare an anode composed of an anode metal and a dielectric film. The obtained obtained was impregnated into the above-mentioned (4) aqueous solution, and the electrostatic electricity was measured at _z, and the value of 4.2 &quot; F was set as the theoretical electrostatic capacitance.谷(2) Preparation of electrodes for solid electrolytic capacitors The anode is immersed in the conductive composition (A - < A-16) and (A, ~Ad), and after removal, 'drying at room temperature for % min. Thereby, an electrolyte layer was formed to produce an electrode for a solid electrolytic capacitor. (3) The electrolytic capacitor was fabricated in the above-obtained electrolyte layer ± coated carbon-burning [Varniphite Fu manufactured by Nippon Graphite Co., Ltd.] and dried, and then coated with silver paste [Manufactured by Nippon Graphite Co., Ltd. "EveryGhmME"] and dried to form a cathode. Pull out the lead connection terminals from the silver paste. (4) Measurement and evaluation The electrostatic capacitance of the obtained electrolytic capacitor at 12 Hz and the internal resistance at 100 kHz were measured by an LCR meter, and the presence or absence of leakage and withstand voltage were evaluated according to the following criteria. &lt;Evaluation Criteria for Leakage&gt; When the measurement is performed by the LCR meter, the leakage current is not lowered, the capacitance cannot be measured, and the internal resistance is set to χ, and the leakage current is lowered to measure the capacitance and the internal resistance. The situation is set to 〇. &lt;Evaluation Criteria for Withstand Voltage&gt; Using a DC power supply device [GP0650 to 05R manufactured by Takasago Manufacturing Co., Ltd.], a voltage was applied in a low current mode of 0.2 mA, and the voltage was automatically boosted, and the voltage when the voltage 24 201229086 was lowered was set as the withstand voltage. The solid electrolytic capacitor of the conductive composition can obtain a value close to 4.2 μ F ) with a relatively low internal resistance. On the other hand, in the capacitor used in Comparative Example 1, since the dopant was an acid, the electrode leakage was large and measurement was impossible. In addition, in the case of using the comparative example 2, the present invention was used as a capacitor for the theoretical electrostatic capacitance (the conductive composition inside the conductive composition is corroded, and the conductive composition for the bulk electrolytic capacitor is used as the capacitor, since the conductivity is still The molecule is present in the solution as a dispersion, and the soil is caused inside the void, and the method is filled with a secondary conductive polymer. Therefore, the internal resistance is high, and only about 1/10 of the theoretical electrostatic capacitance is obtained. In Comparative Example 3, the capacity was insufficient and the internal resistance was also large. Further, the withstand voltage was also lower than that of Examples i to i6. As shown in Table 1, the conductive composition of the present invention showed a higher value. Conductivity The conductive composition of the present invention has a low corrosivity, so that it can be coated with a metal which is susceptible to corrosion, and since the conductive film is highly conductive, it can be expected to be applied to various conductive functions. Material, especially as an electrode for solid electrolytic capacitors. [Simplified description of the diagram] Benefit [main component symbol description]

Claims (1)

201229086 七、申請專利範圍: 1·一種導電性組成物(A),含有經取代之聚噻吩(P) 及三氧化硫錯合物,該經取代之聚噻吩(p )係噻吩重複單 位中之至少一部分為噻吩重複單位(α ),該噻吩重複單位 (α )係噻吩環之3位及/或4位被選自由下述通式(1 )所 示之聚醚基(a )、 碳數1〜15之烷氧基(b)、 碳數2〜19之烷氧基烷基(c)、以及 碳數1〜15之烷基或該烷基之氫原子經上述聚醚基(&amp;) 取代之烷基(d )構成之群中至少1個基所取代, —U〇R1-J__〇r2 ⑴ [式中,OR1表示碳數2〜4之氧基伸烷基,R2表示碳數 1〜15之烧基,k為1〜9之整數]。 2.如申哨專利範圍第i項之導電性組成物,其中,該噻 汾重複單位為通式⑺所表示之重複單位(Η)、 通式⑺所表示之重複單位(α2)或通式⑷所表示之 重複單位(α 3 ), 26 201229086201229086 VII. Patent application scope: 1. A conductive composition (A) containing substituted polythiophene (P) and sulfur trioxide complex, wherein the substituted polythiophene (p) is in a repeating unit of thiophene At least a portion is a thiophene repeating unit (α), and the thiophene repeating unit (α) is at the 3-position and/or 4-position of the thiophene ring selected from the group consisting of polyether groups (a) represented by the following formula (1), and carbon number Alkoxy group (b) of 1 to 15 , alkoxyalkyl group (c) having 2 to 19 carbon atoms, and an alkyl group having 1 to 15 carbon atoms or a hydrogen atom of the alkyl group via the above polyether group (&amp; Substituting at least one of the groups consisting of the substituted alkyl group (d), -U〇R1-J__〇r2 (1) [wherein, OR1 represents an alkylene group having a carbon number of 2 to 4, and R2 represents a carbon number. 1 to 15 of the alkyl group, k is an integer of 1 to 9]. 2. The conductive composition according to item i of the whistle patent, wherein the thiophene repeating unit is a repeating unit (Η) represented by the formula (7), a repeating unit (α2) represented by the formula (7) or a formula (4) Repetitive units indicated (α 3 ), 26 201229086 [式中,OR3及OR6分別獨立地(表示氧基伸乙基或氧基 伸丙基’ R、R7及R8分別獨立地表示碳數i〜12之直鏈或 支鏈之烧基’ R5表示碳數之直鏈或支鏈之伸烧基,^ 及πι分別獨立地為〇〜5之整數]。 . J祀叫布ζ項之導電性組成物,其中,言 早位(α 1)係通式(2)中之OR3為氡基伸乙基,方 =之情料^為碳數3〜12之直鏈或支鏈之烧基,; # . 、 為碳數1〜6之直鏈或支鏈之烷基 重设早位(α 2 )係福+ h、 e i ^ ,^ 式(3)中之R為碳數1〜3之直金 支鏈之伸烷基,〇R6 馬氧基伸乙基,於m為0之情形時 27 201229086 為破數3〜12之直键或支鍵之烧基,於以為1以上之情形 時R7為碳數1〜6之直鏈或支鏈之烷基;該重複單位( 係通式(4)中之r8為碳數3〜12之直鍵或支鏈之燒基。 4. 如申請專利範圍第1項至第3項中任一項之導電性組 成物,其中,该經取代之聚嚷吩(ρ )中之該嚷吩重複單位 (α )之含量於經取代之聚噻吩(ρ)中為50〜100重量%。 5. 如申請專利範圍第i項至第3項任一項之導電性組成 物,其中,以該經取代之聚噻吩(p)中之頭對尾—頭對尾 鍵之百分率所定義之立體規則性為9〇%以上。 6·如申請專利範圍第4項之導電性組成物,其中,以令 經取代之㈣吩⑺中之頭對尾—頭對尾鍵之百分率所定z 義之立體規則性為90%以上。 如申請專利範圍第i項至第3項中心項之導電性纪 成物,其中,三氧化硫錯合物為選自由三氧化硫n,n—二甲 基甲酿胺錯合物、三氧化硫。比咬錯合物及三氧化硫三乙胺 錯合物構成之群中之至少1種三氧化硫錯合物。 8.如申請專利範圍第4項之導電性組成物,其中 化硫錯合物為選自由;r g 孔 一 —氣化&amp; N,N —二甲基甲醯胺錯合 :中:Li咬錯合物及三氧化硫三乙胺錯合物構成之 群中之至^1種二氧化硫錯合物。 9·如申請專利範圍第5項之導電性組成物 化硫錯合物為選自由三氧 八一孔 物、三氧化硫㈣錯合物;Ϊ氧^;—二甲基甲酿胺錯合 群中至幻種三氧化硫錯合:氧化硫三乙胺錯合物構成之 28 201229086 ιο·如申請專利範圍第6項之導電性組成物,其中,三 氧化硫錯合物為選自由三氧化硫N,N—二〒基,醯胺錯: 物、三氧化硫W錯合物及三氧化硫三乙胺錯合物構成之 群中之至少1種三氧化硫錯合物。 11 ·如申咕專利範圍第1至3中任一項之導電性組成 物’其中’基於該經取代之聚噻吩(p)之重量之三氧化硫 錯合物之含量為5〜300重量%。 12.如申請專利範圍第4項之導電性組成物,其中,基 於該經取代之聚嗟岭夕舌旦—_ &amp; 來盎% IP)之重$之三氧化硫錯合物之含量 為5〜300重量%。 13.如申請專利範圍第5項之導電性組成物,其中,基 於該經取代之聚。塞吩(P)之重量之三氧化硫錯合物之含量 為5〜300重量%。 14.如申請專利範圍第6項之導電性組成物,其中,基 於該經取代之聚嘆吩(P)之重量之三氧化硫錯合物之含量 為5〜300重量%。 15.如申請專利範圍第7項之導電性組成物,其中,基 於該經取代之聚嚷吩(P)之重量之三氧化硫錯合物之含量 為5〜300重量%。 8項之導電性組成物,其中,基 之重量之三氧化硫錯合物之含量 16.如申請專利範圍第 於該經取代之聚噻吩(P) 為5〜300重量%。 17.如申請專利範圍第 於該經取代之聚嘧吩(p) 9項之導電性組成物,其中,基 量之一氧化硫錯合物之含量 29 201229086 為5〜300重量%。 18 ·如申請專利範圍第1 〇項之導電性組成物,其中,基 於該經取代之聚嘍吩(P)之重量之三氧化硫錯合物之含量 為5〜300重量〇/。。 19. 種固體電解電容器用電極,係使用申請專利範圍 第1項至第3項中任一項之導電性組成物而成。 20. —種固體電解電容器,係使用申請專利範圍第i項 至第3項中任一項之導電性組成物而成。 21. —種導電性被膜之製造方法,包含將申請專利範圍 第1項至第3項中任一項之導電性組成物塗佈於基板後進 行加熱處理之步驟。 30[wherein, OR3 and OR6 are each independently (indicating that an oxy-ethyl or oxy-propyl group R, R7 and R8 each independently represent a straight or branched alkyl group having a carbon number of i to 12] R5 represents a carbon number The linear or branched extension base, ^ and πι are each independently an integer of 〇~5.] J is a conductive composition of the cloth, wherein the early (α 1) system (2) OR3 is a thiol-extended ethyl group, and the square material is a linear or branched alkyl group having a carbon number of 3 to 12, and is a straight or branched chain having a carbon number of 1 to 6. The alkyl group is reset in the early position (α 2 ) is Fu + h, ei ^ , ^ wherein R in the formula (3) is an alkyl group of a straight gold branch having a carbon number of 1 to 3, and a fluorene R6 alkoxy group is an ethyl group. When m is 0, 27 201229086 is a direct bond or a bond of a bond of 3 to 12, and in the case of 1 or more, R7 is a linear or branched alkyl group having 1 to 6 carbon atoms; The unit (wherein r8 in the formula (4) is a direct bond or a branched alkyl group having a carbon number of 3 to 12. 4. The conductive composition according to any one of claims 1 to 3, Wherein the porphin repeat in the substituted polyporphin (ρ) The content of the (a) is 50 to 100% by weight in the substituted polythiophene (ρ). 5. The conductive composition according to any one of the above items, wherein the The stereoregularity defined by the percentage of the head-to-tail-to-tail bond in the substituted polythiophene (p) is 9〇% or more. 6· The conductive composition of the fourth aspect of the patent application, wherein The ratio of the head-to-tail-to-tail bond in the substituted (iv) phene (7) is more than 90%. For example, the conductive composition of the central item of items i to 3 of the patent application range, The sulfur trioxide complex is selected from the group consisting of sulfur trioxide n, n-dimethylmethanamine complex, sulfur trioxide, specific bite complex and sulfur trioxide triethylamine complex. At least one sulfur trioxide complex. 8. The conductive composition of claim 4, wherein the sulfur complex is selected from the group consisting of: rg pore-gasification &amp; N, N-dimethyl Basementamide mismatch: medium: Li bite complex and sulfur trioxide triethylamine complex formed in the group to ^ 1 kind of sulfur dioxide 9. The conductive composition of the chemical composition of claim 5 is selected from the group consisting of trioxoporous, sulfur trioxide (tetra) complex; oxime; dimethyl amide In the erroneous group, the sulphur trioxide is sulphuric acid sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphur sulphide At least one sulfur trioxide complex in the group consisting of sulfur trioxide, N,N-diindenyl, decylamine, sulfur trioxide W complex, and sulfur trioxide triethylamine complex. The conductive composition of any one of claims 1 to 3, wherein the content of the sulfur trioxide complex based on the weight of the substituted polythiophene (p) is 5 to 300% by weight. . 12. The conductive composition of claim 4, wherein the content of the sulfur trioxide complex based on the weight of the substituted polyfluorene- _ &amp; 5 to 300% by weight. 13. The electrically conductive composition of claim 5, wherein the substituted composition is based on the substituted composition. The content of the sulfur trioxide complex of the weight of the phenotype (P) is 5 to 300% by weight. 14. The conductive composition of claim 6, wherein the content of the sulfur trioxide complex based on the weight of the substituted polysphene (P) is from 5 to 300% by weight. The conductive composition according to claim 7, wherein the content of the sulfur trioxide complex based on the weight of the substituted polyporphin (P) is 5 to 300% by weight. The electroconductive composition of the eighth item, wherein the content of the sulfur trioxide complex of the basis weight is 16. 5 to 300% by weight of the substituted polythiophene (P) as claimed in the patent application. 17. The conductive composition of the substituted polypyrrole (p) 9 according to the patent application, wherein the content of the sulfur oxide complex of one of the monomers 29 201229086 is 5 to 300% by weight. The conductive composition according to the first aspect of the invention, wherein the content of the sulfur trioxide complex based on the weight of the substituted polyporphin (P) is 5 to 300% by weight. . 19. An electrode for a solid electrolytic capacitor, which is obtained by using the conductive composition according to any one of claims 1 to 3. 20. A solid electrolytic capacitor obtained by using the conductive composition according to any one of claims 1 to 3. A method for producing a conductive film, comprising the step of applying a conductive composition according to any one of claims 1 to 3 to a substrate, followed by heat treatment. 30
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