TW201228837A - Articles and mathod for making the same - Google Patents

Articles and mathod for making the same Download PDF

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TW201228837A
TW201228837A TW100100249A TW100100249A TW201228837A TW 201228837 A TW201228837 A TW 201228837A TW 100100249 A TW100100249 A TW 100100249A TW 100100249 A TW100100249 A TW 100100249A TW 201228837 A TW201228837 A TW 201228837A
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Taiwan
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layer
chromium
gradient
substrate
film layer
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TW100100249A
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Chinese (zh)
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Hsin-Pei Chang
Wen-Rong Chen
Huann-Wu Chiang
Cheng-Shi Chen
Cong Li
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Hon Hai Prec Ind Co Ltd
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Priority to TW100100249A priority Critical patent/TW201228837A/en
Publication of TW201228837A publication Critical patent/TW201228837A/en

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Abstract

An article is provided which includes a substrate, and a chromized layer, a Chromium layer, CrN graded layer and an Iridium layer formed on the substrate in that order. The subatrate is made of carbon fiber / ZrB2 composites. The CrN graded layer includes a first CrN graded layer and a second CrN graded layer formed on the Chromium layer in that order. The article has excellent high temperature oxidation resistance and heat shocks resistance. A method for making the article is also provided.

Description

201228837 六、發明說明: 【發明所屬之技術領威】 [0001] 本發明涉及一種被覆件及其製備方法。 【先前技術】 [0002] 碳纖維由於其具有低密度、高強度、高模量、低熱膨脹 係數、耐腐蝕、易編織加工以及較好的熱、電性能等優 良特性被廣泛用於航天航空、建築及電子元器件製備等 領域。然,碳纖維的抗氧化性能較差,且與金屬、聚合 物複合材料的潤濕性不佳,大大限制了碳纖維材料在上 述領域的應用。 [0003] 習知技術利用化學氣相沉積技術(CVD)將碳纖維 與ZrB£相結合形成Cf/ZrB2複合材料’該種cf/zrB複人 材料具有優良的機械性能及韌性’然其高溫抗氡化性較 差。 [0004] 研究發現’採用真空鍍膜技街,於Cf/ZrB2複合基體上依 次形成鉻塗層及銥塗層,可提高Cf/ZrB2複合基體及銥塗 層的高溫抗氧化性及抗熱滅性能。然而,在高溫氧化性 條件下,當銥塗層意外失效時,鉻塗層與氧氣反應形成 的Cr^3層較為疏鬆無法阻止乳氣向骐層内部擴散,如此 使Cf/ZrBz複合基體的南溫抗氧化性急劇下降。 【發明内容】 [0005] 鑒於此,提供一種有效解決上述問題的被覆件。 [0006] 另外’還提供一種上述被覆件的製備方法。 [0007] 100100249 種被覆件,其包括基體、依次形成於該基體上的鉻滲 表單編號A0101 第3頁/共16頁 1002000414-0 201228837 入層、鉻層、氮化鉻梯度膜層及銥層;該基體的材質為 碳纖維/硼化锆複合材料,該氮化鉻梯度膜層包括依次形 成於鉻層上的第一梯度氮化鉻膜層及第二梯度氮化鉻膜 層,所述第一梯度氮化鉻膜層中的氮元素的質量百分含 量由靠近基體至遠離基體的方向呈梯度增加、所述第二 梯度氮化鉻膜層中的氮元素的質量百分含量由靠近基體 至遠離基體的方向呈梯度減少。 [0008] 一種被覆件的製備方法,包括以下步驟: [0009] 提供基體,該基體的材質為碳纖維/硼化銼複合材料; [0010] 以鉻靶為靶材,於所述基體表面磁控濺射鉻層,濺射溫 度為100〜200°C,濺射時間為150〜250min ;在磁控濺射 該鉻層的過程中,該鉻層與基體介面處的金屬鉻向基體 擴散,於基體與鉻層之間形成鉻滲入層; [0011] 以鉻靶為靶材,以氮氣為反應氣體,於鉻層上形成氮化 鉻梯度膜層,氮化鉻梯度膜層包括依次形成於鉻層上的 第一梯度氮化鉻膜層及第二轉度氮化鉻膜層’所述第一 梯度氮化鉻膜層中的氮元素的質量百分含量由靠近基體 至遠離基體的方向呈梯度增加、所述第二梯度氮化鉻膜 層中的氮元素的質量百分含量由靠近基體至遠離基體的 方向呈梯度滅少; [0012] 以銥靶為乾材,於所述氮化鉻梯度膜層上磁控濺射形成 銥層。 [0013] 所述鉻層的形成可提高所述氮化鉻梯度膜層、銥層與基 體之間的結合力,使被覆件經高溫處理後銥層不易剝落 100100249 表單編號A0101 第4頁/共16頁 1002000414-0 201228837 或裂紋’如此可提向所述被覆件的高溫抗氧化性能。由 於藉由上述製備方法形成的銀層幾乎無針孔、具有良好 的緻密性,如此可進-步提高所述被覆件的抗氧化性。 更重要的,在咼溫氧化條件下,所述氮化鉻梯度膜層可 與進入膜層的氧氣反應生成緻密的氮氧化鉻薄膜,如此 可阻擋氧乱向膜層内部擴散,避免當兹塗層意外失效時 所述被覆件的南溫抗氧化性能的急劇下降。 [0014] Ο [0015] 〇 [0016] [0017] [0018] [0019] 由於所述膜層之間的過渡良好,使膜層之間沒有成分和 力學性能的突變,如此使所述被覆件具有良好的抗熱震 【實施方式】 請參閱圖1,本發明一較佳實施例的被覆件10包括基體11 、依次形成於該基體11上的鉻滲入層13、鉻層15、氮化 鉻梯度膜層17及銥層19。該被覆件1〇可為渦輪葉片、喷 嘴等航天航空機械零部件,亦可為建築、電子及汽車等 交通工具的零部件。 該基體11的材質為碳纖維(Cf)硼化鍅(ZrB2)複合材 料β 所述鉻層15、氮化鉻梯度膜層17及銀層19均可藉由磁控 濺射鍍膜法形成。 m 所述鉻層15的厚度為0. 2~〇· 所述氮化鉻梯度膜層17包括依次形成於該絡層15上的第 一梯度氮化鉻膜層171和第二梯度氮化絡膜層173。所述 第一·梯度氮化鉻膜層171中的氮元素的質量百分含量由靠 100100249 表單煸號A0101 第5頁/共16頁 1002000414-0 201228837 近基體11至遠離基體11的方向呈梯度増加、所述第二梯 度氮化絡膜層173中的氮元素的質量百分含量由靠近基體 11至遠離基體11的方向呈梯度減少。 [0020] [0021] [0022] [0023] [0024] [0025] [0026] [0027] [0028] 100100249 所述氮化鉻梯度膜層17總的厚度為0. 8〜1. 2# m。 所述第一梯度氮化鉻膜層171的厚度為〇. 4〜m。 所述第二梯度氮化鉻膜層173的厚度為〇. 4〜〇. 6从m。 所述銥層19的厚度為〇. 8〜1 。 所述鉻滲入層13係在所述鉻層15的形成過程中,鉻層15 與基體11介面處的金屬鉻向基體丨丨内擴散而形成。所述 鉻滲入層13包括碳纖維(Cf)、ΖγΒ2陶瓷相、&金屬相 及Cr-C^g 。 本發明一較佳實施例的製備所述被覆件1〇的方法主要包 括如下步驟: 提供基體11,該基體11的材質為碳纖維/硼化鍅複合材料 〇 請參閱圖2,提供一真空鍍膜機1〇〇,將所述基體n置於 該真空鑛膜機100内進行電漿清洗,以進一步去除基體 表面的油污’以及改善基體Η表面與後續塗層的結合力 該鍍膜機100包括一鍍膜室20及與鍍膜室2〇相連接的一真 空泵30 ’真空泵30用以對鍍膜室2〇抽真空。該鍍膜室2〇 内設有轉架(未圖示)、二第—乾材22及二第二把材23 。轉架帶動基體11沿圓形執跡21公轉,且基體"在沿軌 1002000414-0 表單編號Α0101 第6頁/共16頁 201228837 ❹ [0029] 跡21公轉時亦自轉。二第一靶材22與二第二靶材23關於 軌跡21的中心對稱設置,且二第一靶材22相對地設置在 軌跡21的内外側,二第二靶材23相對地設置在執跡21的 内外側。每一第一靶材22及每一第二靶材23的兩端均設 有氣源通道24,氣體經該氣源通道24進入所述鍍膜室20 中。當基體11穿過二第一靶材22之間時,可鍍上第一靶 材22表面濺射出的粒子;同理,當基體11穿過二第二靶 材23之間時,可鍍上第二靶材23表面濺射出的粒子。本 實例中,所述第一靶材22為鉻靶,所述第二靶材23為銥 把。 該電漿清洗的具體操作及工藝參數為:如圖2所示,基體 11安裝於鍍膜室20内,真空泵30對所述鍍膜室20進行抽 真空處理至真空度為8. 0xl0_3Pa,然後以30 0~500sccm (標準狀態毫升/分鐘)的流量向鍍膜室20内通入純度為 99. 999%的氬氣,並施加-500800V的偏壓於基體11, 對基體11表面進行電漿清洗,清洗時間為5 ~ 15 m i η。 〇 [0030] 在對基體11進行電漿清洗後,於該基體11上形成鉻層15 。形成該鉻層15的具體操作及工藝參數如下:以氬氣為 工作氣體,調節氬氣流量為20〜150sccm,於基體11上施 加- 1 00 — 300V的偏壓,並加熱鍍膜室20至100〜200°C ( 即鍍膜溫度為100〜200°C);開啟已安裝於該鍍膜機内的 第一靶材22的電源,設置其功率為2〜5kw,沉積鉻層15 。沉積該鉻層15的時間為5~ 1 0mi η。 在形成所述鉻層15的過程中,由於鉻金屬與碳纖維/硼化 锆複合材料之間具有良好的潤濕性,所述鉻層15與基體 100100249 表單編號Α0101 第7頁/共16頁 1002000414-0 [0031] 201228837 11介面處的金屬鉻向基體11内擴散,形成包括碳纖維(201228837 VI. Description of the Invention: [Technical Leadership of Invention] [0001] The present invention relates to a coated member and a method of preparing the same. [Prior Art] [0002] Carbon fiber is widely used in aerospace, construction due to its low density, high strength, high modulus, low coefficient of thermal expansion, corrosion resistance, easy weaving, and good thermal and electrical properties. And the field of electronic components preparation. However, the carbon fiber has poor oxidation resistance and poor wettability with metal and polymer composites, which greatly limits the application of carbon fiber materials in the above fields. [0003] Conventional technology uses chemical vapor deposition (CVD) to combine carbon fiber with ZrB£ to form a Cf/ZrB2 composite material. This kind of cf/zrB composite material has excellent mechanical properties and toughness. Poor chemical. [0004] It is found that the use of vacuum coating technology to form a chromium coating and a ruthenium coating on the Cf/ZrB2 composite substrate can improve the high temperature oxidation resistance and heat resistance of the Cf/ZrB2 composite substrate and the ruthenium coating. . However, under high temperature oxidizing conditions, when the ruthenium coating accidentally fails, the Cr^3 layer formed by the reaction of the chrome coating with oxygen is loose and cannot prevent the milk from diffusing into the ruthenium layer, thus making the Cf/ZrBz composite matrix south. The temperature oxidation resistance drops sharply. SUMMARY OF THE INVENTION [0005] In view of this, a cover member that effectively solves the above problems is provided. Further, a method of producing the above-mentioned covering member is also provided. [0007] 100100249 kinds of coverings, comprising a base body, a chrome-plated form number sequentially formed on the base body A0101, page 3 / a total of 16 pages 1002000414-0 201228837 Incoming layer, chrome layer, chromium nitride gradient film layer and bismuth layer The material of the substrate is a carbon fiber/zirconium boride composite layer, and the chromium nitride gradient film layer comprises a first gradient chromium nitride film layer and a second gradient chromium nitride film layer sequentially formed on the chromium layer, The mass percentage of nitrogen element in a gradient chromium nitride film layer increases in a gradient from a matrix to a direction away from the substrate, and the mass percentage of nitrogen element in the second gradient chromium nitride film layer is close to the substrate The gradient is reduced in the direction away from the substrate. [0008] A method for preparing a coated member, comprising the following steps: [0009] providing a substrate, the material of which is a carbon fiber / lanthanum boride composite material; [0010] using a chromium target as a target, magnetically controlling the surface of the substrate Sputtering a chromium layer, a sputtering temperature of 100 to 200 ° C, and a sputtering time of 150 to 250 min; during magnetron sputtering of the chromium layer, the chromium layer and the metal chromium at the interface of the substrate diffuse toward the substrate. Forming a chromium infiltration layer between the substrate and the chromium layer; [0011] forming a chromium nitride gradient film layer on the chromium layer by using a chromium target as a target gas and using nitrogen as a reaction gas, and the chromium nitride gradient film layer is sequentially formed on the chromium layer The first gradient chromium nitride film layer on the layer and the second rotation chromium nitride film layer 'the mass percentage of the nitrogen element in the first gradient chromium nitride film layer is from the substrate to the direction away from the substrate The gradient is increased, and the mass percentage of the nitrogen element in the second gradient chromium nitride film layer is less gradient from the substrate to the direction away from the substrate; [0012] the ruthenium target is a dry material, and the nitridation Magnetron sputtering on the chromium gradient film layer forms a germanium layer. [0013] The formation of the chrome layer can improve the bonding force between the chromium nitride gradient film layer, the ruthenium layer and the substrate, so that the ruthenium layer is not easily peeled off after the high temperature treatment of the coated member 100100249 Form No. A0101 Page 4 / Total 16 pages 1002000414-0 201228837 or cracks 'so can provide high temperature oxidation resistance to the coated parts. Since the silver layer formed by the above preparation method has almost no pinholes and has good compactness, the oxidation resistance of the coated member can be further improved. More importantly, under the tempering oxidation condition, the chromium nitride gradient film layer can react with the oxygen entering the film layer to form a dense chromium oxynitride film, so as to block the diffusion of oxygen into the interior of the film layer, thereby avoiding the application of the coating. The south temperature anti-oxidation performance of the coated member is drastically reduced when the layer is unexpectedly failed. [0014] [0019] [0019] [0019] [0019] Because of the good transition between the layers, there is no abrupt change in composition and mechanical properties between the layers, thus making the coated Having a good thermal shock resistance [Embodiment] Referring to Figure 1, a covering member 10 according to a preferred embodiment of the present invention includes a base 11 , a chromium infiltrating layer 13 sequentially formed on the base 11, a chromium layer 15, and a chromium nitride. Gradient film layer 17 and germanium layer 19. The covering member 1 can be an aerospace mechanical component such as a turbine blade or a nozzle, or a component of a building, an electronic or an automobile. The material of the substrate 11 is a carbon fiber (Cf) lanthanum boride (ZrB2) composite material. The chromium layer 15, the chromium nitride gradient film layer 17, and the silver layer 19 can be formed by a magnetron sputtering coating method. The thickness of the chromium layer 15 is 0.2. The chromium nitride gradient film layer 17 includes a first gradient chromium nitride film layer 171 and a second gradient nitride layer which are sequentially formed on the layer 15. Film layer 173. The mass percentage of the nitrogen element in the first gradient chromium nitride film layer 171 is gradient from the base body 11 to the direction away from the substrate 11 by 100100249 Form No. A0101 Page 5 / Total 16 Page 1002000414-0 201228837 The mass percentage of the nitrogen element in the second gradient nitride film layer 173 is decreased in a gradient from the substrate 11 to the direction away from the substrate 11. The total thickness of the chromium nitride gradient film layer 17 is 0. 8~1. 2# m . The thickness of the first gradient chromium nitride film layer 171 is 〇. 4~m. The thickness of the second gradient chromium nitride film layer 173 is 〇. 4~〇. 6 from m. The thickness of the ruthenium layer 19 is 〇. 8~1. The chromium infiltration layer 13 is formed during the formation of the chromium layer 15, and the metal chromium at the interface between the chromium layer 15 and the substrate 11 is diffused into the matrix crucible. The chromium infiltrated layer 13 comprises carbon fiber (Cf), ΖγΒ2 ceramic phase, & metal phase and Cr-C^g. The method for preparing the coated member 1B according to a preferred embodiment of the present invention mainly comprises the following steps: providing a substrate 11 made of a carbon fiber/boron boride composite material. Referring to FIG. 2, a vacuum coating machine is provided. 1 , the substrate n is placed in the vacuum film machine 100 for plasma cleaning to further remove the oil stain on the surface of the substrate and to improve the bonding force between the surface of the substrate and the subsequent coating. The coating machine 100 includes a coating. The chamber 20 and a vacuum pump 30' connected to the coating chamber 2' are used to evacuate the coating chamber 2'. In the coating chamber 2, a turret (not shown), two first dry materials 22, and two second materials 23 are provided. The turret drives the base body 11 to revolve 21 rounds along the circle, and the base body " is along the track 1002000414-0 Form No. Α0101 Page 6 of 16 201228837 ❹ [0029] The track 21 is also rotated. The two first targets 22 and the two second targets 23 are symmetrically disposed with respect to the center of the track 21, and the two first targets 22 are oppositely disposed on the inner and outer sides of the track 21, and the second targets 23 are oppositely disposed on the track. The inner and outer sides of 21. A gas source passage 24 is provided at each end of each of the first target 22 and each of the second targets 23, and the gas enters the coating chamber 20 through the gas source passage 24. When the substrate 11 passes between the two first targets 22, particles sputtered on the surface of the first target 22 may be plated; similarly, when the substrate 11 passes between the second targets 23, it may be plated. Particles sputtered on the surface of the second target 23. In the present example, the first target 22 is a chromium target and the second target 23 is a crucible. The specific operation and process parameters of the plasma cleaning is as follows: as shown in Fig. 2, the substrate 11 is installed in the coating chamber 20, the vacuum pump 30 is vacuumed to the coating chamber 20 to a vacuum of 8. 0xl0_3Pa, then 30 0至500sccm (standard state cc / min) flow into the coating chamber 20 into a purity of 99.999% argon, and apply a bias of -500800V to the substrate 11, the surface of the substrate 11 is plasma cleaned, cleaned The time is 5 ~ 15 mi η. [0030] After the substrate 11 is subjected to plasma cleaning, a chromium layer 15 is formed on the substrate 11. The specific operation and process parameters for forming the chromium layer 15 are as follows: using argon as the working gas, adjusting the flow rate of the argon gas to 20 to 150 sccm, applying a bias voltage of -100 to 300 V on the substrate 11, and heating the coating chamber 20 to 100. ~200 ° C (that is, the coating temperature is 100 to 200 ° C); the power of the first target 22 already installed in the coating machine is turned on, and the power is set to 2 to 5 kw, and the chromium layer 15 is deposited. The time for depositing the chromium layer 15 is 5 to 10 mi η. In the process of forming the chromium layer 15, due to good wettability between the chromium metal and the carbon fiber/zirconium boride composite, the chromium layer 15 and the substrate 100100249 are numbered Α0101, page 7 / total 16 pages 1002000414 -0 [0031] 201228837 The metal chromium at the interface 11 diffuses into the substrate 11 to form carbon fibers (including carbon fibers)

Cf ) 、ZrB2_究相、Cr金屬相及Cr-C相的絡滲入層13。 該鉻滲入層13提高了鉻層15與基體11之間的結合力。 [0032] 於該鉻層15上形成氮化鉻梯度膜層17,所述氮化鉻梯度 膜層17包括依次形成於該鉻層15上的第一梯度氮化鉻膜 層171和第二梯度氮化鉻膜層173。 [0033] 形成所述第一梯度氮化鉻膜層171的具體操作及工藝參數 如下:保持所述氬氣的流量、施加於基體11的偏麼、鉻 靶電源功率及鍍膜溫度不變,以氮氣為反應氣體,向鍍 膜室内通入初始流量為10〜lOOsccm的氮氣,於所述鉻層 15上沉積第一梯度氮化鉻膜層171。在沉積梯度膜層11的 過程中,每沉積5min將氮氣的流量增大15~20sccm,沉 積該第一梯度氮化鉻膜層171的時間為15〜35min。 [0034] 形成所述第二梯度氮化鉻膜層173的具體操作及工藝參數 如下:保持所述氬氣的流量、施加於基體11的偏壓、鉻 靶電源功率及鍍膜溫度不變,以氮氣為反應氣體,向鍍 膜室内通入初始流量為130~50sccm的氮氣,於所述第一 梯度氮化鉻膜層171上沉積第二梯度氮化鉻膜層173。在 沉積第二梯度氮化鉻膜層173的過程中,每沉積5min將氮 氣的流量減小10~20sccm,沉積該第二梯度氮化鉻膜層 173的時間為15~25min。 [0035] 所述氮化鉻梯度膜層17與鉻層15、後續鍍覆的銥層19之 間過渡較好,膜層之間沒有成分和力學性能的突變。 [0036] 於該氮化鉻梯度膜層17上形成銥層19,形成所述銥層19 ,λ λ ·« η η n i r\ iuuluuz4y i eg I.J. nk. ί Π 1 /Λ 1 表早瑪就AUiUi 1ΑΑΓ»Α〇η^1 4 ιυυζυυυ4ΐ4 201228837 [0037] Ο [0038] 的,、體操作及工藝參數如下:關閉所述第—㈣22的電 源保持所迷風氣的流量、施知於基體^的偏壓及錄膜 皿度不i帛啟已安裝於所述錢膜室2㈣第二乾材23的 電源’設置其功率為2〜,於所述鉻層15上沉積銀層 19。沉積該銥層19的時間為6〇 85min。 在磁控錢射形成銥層19的過程中,銀金屬將擴散至所述 第二梯度氮化鉻膜層丨73的表層内,如此使銥層19與第二 梯度氮化鉻膜層173之間過渡較好,沒有成分和力學性能 的突變。Cf), ZrB2_ phase, Cr metal phase and Cr-C phase complex infiltration layer 13. The chromium infiltrated layer 13 increases the bonding force between the chromium layer 15 and the substrate 11. Forming a chromium nitride gradient film layer 17 on the chromium layer 15, the chromium nitride gradient film layer 17 including a first gradient chromium nitride film layer 171 and a second gradient sequentially formed on the chromium layer 15. A chromium nitride film layer 173. [0033] The specific operation and process parameters of forming the first gradient chromium nitride film layer 171 are as follows: maintaining the flow rate of the argon gas, the bias applied to the substrate 11, the power of the chromium target power, and the coating temperature are unchanged. Nitrogen gas is a reaction gas, and nitrogen gas having an initial flow rate of 10 to 100 sccm is introduced into the coating chamber, and a first gradient chromium nitride film layer 171 is deposited on the chromium layer 15. In the process of depositing the gradient film layer 11, the flow rate of nitrogen gas is increased by 15 to 20 sccm every 5 minutes, and the time for depositing the first gradient chromium nitride film layer 171 is 15 to 35 minutes. [0034] The specific operation and process parameters of forming the second gradient chromium nitride film layer 173 are as follows: maintaining the flow rate of the argon gas, the bias voltage applied to the substrate 11, the chromium target power, and the coating temperature are unchanged Nitrogen gas is a reaction gas, and a nitrogen gas having an initial flow rate of 130 to 50 sccm is introduced into the coating chamber, and a second gradient chromium nitride film layer 173 is deposited on the first gradient chromium nitride film layer 171. In the process of depositing the second gradient chromium nitride film layer 173, the flow rate of nitrogen gas is reduced by 10-20 sccm every 5 min, and the time of depositing the second gradient chromium nitride film layer 173 is 15-25 min. [0035] The transition between the chromium nitride gradient film layer 17 and the chromium layer 15 and the subsequently plated tantalum layer 19 is better, and there is no sudden change in composition and mechanical properties between the film layers. [0036] A germanium layer 19 is formed on the chromium nitride gradient film layer 17 to form the germanium layer 19, λ λ · « η η nir iuuluuz4y i eg IJ nk. ί Π 1 / Λ 1 table early AUiUi 1ΑΑΓ Α〇 ^ ^ 4 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 00 00 00 00 00 00 00 00 00 00 00 00 And the recording film is not installed in the money film chamber 2 (four) the second dry material 23 of the power supply 'set its power is 2 ~, depositing a silver layer 19 on the chromium layer 15. The time for depositing the ruthenium layer 19 was 6 〇 85 min. During the process of magnetron forming the germanium layer 19, the silver metal will diffuse into the surface layer of the second gradient chromium nitride film layer 73, so that the germanium layer 19 and the second gradient chromium nitride film layer 173 are The transition is better, with no mutations in composition and mechanical properties.

GG

[0039] [0040] 本發明較佳實施例被覆件1〇的製備方法,先於基體"上 磁控滅射形成鉻層15 ’再於所述鉻層15上依次形成第一 梯度氮化絡膜層171和第二梯度氮化鉻膜層173,再於該 第二梯度氮化鉻膜層173上形成銥層19,膜系逐層過渡較 好,膜層之間的結合力較好且膜層内部沒有明顯的應力 產生’如此可提高膜層之間的結合力,使被覆件10經高 溫声理後銥層19不易發生剝落或裂紋,如此可提高所述 被覆件10的高溫抗氧化性能。由於藉由上述製備方法形 成的銥層19幾乎無針孔、具有良好的緻密性,如此可進 一步提高所述被覆件10的抗氧化性。 更重要的,在高溫氧化條件下,所述氮化鉻梯度膜層17 可與進入膜層的氧氣反應生成緻密的氮氧化鉻薄膜,如 此可阻擋氧氣向膜層内擴散,避免當銥塗層意外失效時 所述被覆件10的高溫抗氧化性能的急劇下降。 由於被覆件10膜層之間的良好過渡’使膜層之間沒有成 100100249 表單編號A0101 第9頁/共16萸 1002000414-0 201228837 分和力學性能的突變,如此使所述被覆件ίο具有良好的 抗熱震性能。 【圖式簡單說明】 [0041] 圖1為本發明較佳實施例的被覆件的剖視圖; [0042] 圖2為製備圖1中鍍膜件所用真空鍍膜機的示意圖。 , 【主要元件符號說明】 · r. η · n t n J. aO , x. n tz. I Λ Ί r\ 1 A* 1 Π / 1_I t Γ> Λ Γ\ Ci (\ f\Γ\ Λ Λ Λ Λ !UUiUUZ4y 衣早編现 Λυιυι % ιυ 兵/共 ID 只 ιυυ乙υυυ4ΐ4-υ [0043] 被覆件:10 [0044] 基體:11 [0045] 鉻滲入層:1 3 [0046] 鉻層:15 [0047] 氮化鉻梯度層:17 [0048] 第一梯度氮化鉻膜層 :171 [0049] 第二梯度氮化鉻膜層 :173 [0050] 银層:19 [0051] 鍍膜機:100 [0052] 鍍膜室:20 [0053] 真空泵:30 [0054] 執跡:21 [0055] 第一靶材:22 [0056] 第二靶材:23 201228837 [0057] 氣源通道:24[0040] In the preferred embodiment of the present invention, the method for preparing the coated member 1 is formed by first forming a chrome layer 15' on the substrate and then forming a first gradient nitridation on the chrome layer 15 The film layer 171 and the second gradient chromium nitride film layer 173 are further formed on the second gradient chromium nitride film layer 173, and the film layer is well transitioned layer by layer, and the bonding force between the film layers is better. Moreover, there is no obvious stress generation inside the film layer. Thus, the bonding force between the film layers can be improved, and the coating layer 10 is not easily peeled off or cracked after the high temperature sound treatment, so that the high temperature resistance of the covering member 10 can be improved. Oxidation properties. Since the tantalum layer 19 formed by the above-described production method has almost no pinholes and has good compactness, the oxidation resistance of the coated member 10 can be further improved. More importantly, under high temperature oxidation conditions, the chromium nitride gradient film layer 17 can react with oxygen entering the film layer to form a dense chromium oxynitride film, which can block the diffusion of oxygen into the film layer and avoid the enamel coating. The high temperature oxidation resistance of the coated member 10 is drastically lowered in the event of an accidental failure. Due to the good transition between the film layers of the coated member 10, there is no change in the mechanical properties between the film layers, 100100249, Form No. A0101, Page 9 / Total 16萸1002000414-0 201228837, so that the coated member ίο has good Thermal shock resistance. BRIEF DESCRIPTION OF THE DRAWINGS [0041] FIG. 1 is a cross-sectional view of a coated member according to a preferred embodiment of the present invention; [0042] FIG. 2 is a schematic view of a vacuum coater used for preparing the coated member of FIG. , [Description of main component symbols] · r. η · ntn J. aO , x. n tz. I Λ Ί r\ 1 A* 1 Π / 1_I t Γ> Λ Γ\ Ci (\ f\Γ\ Λ Λ Λ Λ !UUiUUZ4y 衣早编Λυ υιυι % ιυ 兵/共ID only ιυυ乙υυυ4ΐ4-υ [0043] Covering: 10 [0044] Base: 11 [0045] Chromium infiltration layer: 1 3 [0046] Chromium layer: 15 [ 0047] Chromium nitride gradient layer: 17 [0048] First gradient chromium nitride film layer: 171 [0049] Second gradient chromium nitride film layer: 173 [0050] Silver layer: 19 [0051] Coating machine: 100 [ 0052] Coating chamber: 20 [0053] Vacuum pump: 30 [0054] Obstruction: 21 [0055] First target: 22 [0056] Second target: 23 201228837 [0057] Air source passage: 24

〇 100100249 表單編號A0101 第11頁/共16頁 1002000414-0〇 100100249 Form No. A0101 Page 11 of 16 1002000414-0

Claims (1)

201228837 七、申請專利範圍: 1 . 一種被覆件,包括基體及銥層,該基體的材質為碳纖維/ 硼化锆複合材料,其改良在於:所述被覆件還包括依次形 成於該基體上的鉻滲入層、鉻層、氮化鉻梯度膜層,該銀 層形成於該氮化鉻梯度膜層上,該氮化鉻梯度膜層包括依 次形成於鉻層上的第一梯度氮化鉻膜層及第二梯度氮化鉻 膜層,所述第一梯度氮化鉻膜層中的氮元素的質量百分含 量由靠近基體至遠離基體的方向呈梯度增加、所述第二梯 度氮化鉻膜層中的氮元素的質量百分含量由靠近基體至遠 離基體的方向呈梯度減少。 2 .如申請專利範圍第1項所述之被覆件,其中所述鉻層、氮 化鉻梯度膜層及銥層均藉由磁控濺射鍍膜法形成。 3 .如申請專利範圍第2項所述之被覆件,其中所述鉻滲入層 係在所述鉻層的形成過程中,鉻層與基體介面處的金屬鉻 向基體内擴散而形成。 4 .如申請專利範圍第3項所述之被覆件,其中所述鉻滲入層 中含有碳纖維、2“2陶瓷相、Cr金屬相及Cr-C相。 5 .如申請專利範圍第2項所述之被覆件,其中所述鉻層的厚 度為0.2〜0.3/zm,所述銥層的厚度為0. 8~1 //m。 6 .如申請專利範圍第2項所述之被覆件,其中所述氮化鉻梯 度膜層的總厚度為0. 8〜1. 2 ,所述第一梯度氮化鉻膜 層的厚度為0.4~0.6//m,所述第二梯度氮化鉻膜層的厚 度為 0.4 〜0.6/zm。 7 . —種被覆件的製備方法,包括以下步驟: 提供基體,該基體的材質為碳纖維/硼化锆複合材料; 100100249 表單編號AOiOl 第1Ζ貝/共it) Κ 201228837 以絡乾為乾材’於所述基體表面磁控滅射鉻層,賤射溫度 為100〜200°C ’濺射時間為150〜250min ;在磁控濺射該 鉻層的過程中’該鉻層與基體介面處的金屬鉻向基體擴散 ,於基體與鉻層之間形成鉻滲入層; 以鉻靶為靶材,以氮氣為反應氣體,於鉻層上依次形成氮 化絡梯度膜層,氮化鉻梯度膜層包括依次形成於鉻層上的 第一梯度氮化鉻骐層及第二梯度氮化鉻膜層,所述第一梯 度氮化鉻膜層中的氮元素的質量百分含量由靠近基體至遠 Ο201228837 VII. Patent application scope: 1. A covering member comprising a base body and a enamel layer, the base material is made of a carbon fiber/zirconium boride composite material, and the improvement is that the covering member further comprises chrome sequentially formed on the base body. An infiltration layer, a chromium layer, a chromium nitride gradient film layer, the silver layer is formed on the chromium nitride gradient film layer, and the chromium nitride gradient film layer comprises a first gradient chromium nitride film layer sequentially formed on the chromium layer And a second gradient chromium nitride film layer, the mass percentage of the nitrogen element in the first gradient chromium nitride film layer is increased in a gradient from the substrate to the direction away from the substrate, and the second gradient chromium nitride film The mass percentage of nitrogen in the layer decreases in a gradient from the substrate to the direction away from the substrate. 2. The coated article of claim 1, wherein the chromium layer, the chromium nitride gradient film layer and the tantalum layer are each formed by a magnetron sputtering coating method. 3. The coated article of claim 2, wherein the chromium infiltrating layer is formed during the formation of the chromium layer, and the chromium layer and the metal chromium at the interface of the substrate are diffused into the matrix. 4. The coated article of claim 3, wherein the chromium infiltrated layer comprises carbon fiber, 2"2 ceramic phase, Cr metal phase, and Cr-C phase. 5. As claimed in claim 2 The cover member, wherein the thickness of the chrome layer is 0.2 to 0.3/zm, and the thickness of the ruthenium layer is 0.8 to 1 //m. 6. The cover member according to claim 2, The thickness of the first gradient chromium nitride film layer is 0.4~0.6//m, and the second gradient chromium nitride film is 0. 8~1. The thickness of the layer is 0.4 to 0.6/zm. 7. The method for preparing the coated member comprises the following steps: providing a substrate made of carbon fiber/zirconium boride composite material; 100100249 Form No. AOiOl 1st mussel/common Κ 201228837 to dry the dry material as the dry material 'on the surface of the substrate, magnetically extinguish the chromium layer, the sputtering temperature is 100~200 ° C 'sputtering time is 150~250min; the process of magnetron sputtering the chromium layer The metal chromium at the interface between the chromium layer and the substrate diffuses toward the substrate, forming a chromium infiltration layer between the substrate and the chromium layer; a nitrogen-based reactive gas, a nitrided gradient film layer is sequentially formed on the chromium layer, and the chromium nitride gradient film layer comprises a first gradient chromium nitride layer and a second gradient chromium nitride which are sequentially formed on the chromium layer. a film layer, the mass percentage of nitrogen in the first gradient chromium nitride film layer is close to the substrate to the far side 離基體的方向呈梯度增加、所述第二梯度氮化鉻膜層中的 氣元素的質量百分含量由靠近基體至遠離基體的方向呈梯 度減少; 以銥靶為靶材’於所述氮化鉻梯度膜層上磁控濺射形成銥 層。 •如申請專利範圍第7項所述之被覆件的製備方法,其中磁 控錢射形成所述鉻層的工藝參數為:以氬氣為工作氣體, 氬氣流量為20〜150seem,施表於基體上的偏壓為 -100 —3〇〇v,鉻靶的電源功率馬2〜5除,沉積時間為 5 ~ 1 0 m i η。 9 . 如申請專利範圍第7項所述之被覆件的製備方法,其中磁 控藏射^/成所述氮化絡梯度膜層包括如下步驟: 於絡層上沉積第一梯度氮化鉻膜層:以氬氣為工作氣體, 氮氣Z/IL星為2〇〜i5〇sccm,施加於基體上的偏壓為 ,鉻靶的電源功率為2〜5kw,向鍍膜室内通 入初始量為l〇~100sccm的氮氣’在沉積第一梯度氮化 銘膜層過程中,每沉積5min將氮氣的流量增大 100100249 15~20sccm , 表單編號AOloj 沉積時間為15~35min ; 第13頁/共16頁 1002000414-0 201228837 於第一梯度氮化鉻膜層上沉積第二梯度氮化鉻膜層:以氬 氣為工作氣體,氬氣流量為20〜150sccm,施加於基體上 的偏壓為-1 00 — 300V,鉻靶的電源功率為2〜5kW,向鍍 膜至内通入初始流量為130〜50sccm的氮氣,在沉積第— 梯度氮化鉻膜層過程中,每沉積5min將氮氣的流量減小 15~20sccm,沉積時間為15〜25min。 10 .如申請專利範圍第7項所述之被覆件的製備方法,其中磁 控濺射形成所述銥層的工藝參數為:以氬氣為工作氣體, 氬氣流量為20〜150sccm,施加於基體上的偏壓為 -100〜-300V,銀靶的電源功率為2〜5kw,鍍膜溫度為 10 0〜2 0 0 °C ’鍍膜時間為6 〇、8 5 m j η ώ 1 Λ η1ααπ 4^ 1υυιυυ^4» 表單煸號Α0101 第14頁/共16頁 1002000414-0a gradient increases from the direction of the substrate, and the mass percentage of the gas element in the second gradient chromium nitride film layer decreases in a gradient from the substrate to the direction away from the substrate; the target is targeted to the nitrogen The ruthenium layer is formed by magnetron sputtering on the chrome gradient film layer. The method for preparing a coated article according to claim 7, wherein the process parameter for forming the chromium layer by magnetic control is: using argon as the working gas, and the flow rate of the argon gas is 20 to 150 seem, The bias voltage on the substrate is -100 - 3 〇〇 v, the power supply of the chrome target is 2 to 5, and the deposition time is 5 ~ 10 0 η. 9. The method of preparing a coated article according to claim 7, wherein the magnetron depositing/forming the nitrided gradient film layer comprises the steps of: depositing a first gradient chromium nitride film on the complex layer; Layer: argon gas is used as working gas, nitrogen Z/IL star is 2〇~i5〇sccm, the bias voltage applied to the substrate is, the power supply of the chromium target is 2~5kw, and the initial amount into the coating chamber is l 〇~100sccm of nitrogen' During the deposition of the first gradient nitriding layer, the flow rate of nitrogen is increased by 100100249 15~20sccm for 5min deposition, and the deposition time of the form number AOloj is 15~35min; Page 13 of 16 1002000414-0 201228837 depositing a second gradient chromium nitride film layer on the first gradient chromium nitride film layer: using argon gas as the working gas, the argon gas flow rate is 20~150sccm, and the bias voltage applied to the substrate is -1 00 — 300V, the chrome target power supply is 2~5kW, and the initial flow rate is 130~50sccm to the inside of the coating. During the deposition of the first gradient chromium nitride film, the flow rate of nitrogen is reduced every 5min. 15~20sccm, deposition time is 15~25min. The method for preparing a coated article according to claim 7, wherein the process parameter for forming the tantalum layer by magnetron sputtering is: using argon as a working gas, and an argon flow rate of 20 to 150 sccm, applied to The bias voltage on the substrate is -100~-300V, the power supply of the silver target is 2~5kw, and the coating temperature is 10 0~2 0 0 °C. The coating time is 6 〇, 8 5 mj η ώ 1 Λ η1ααπ 4^ 1υυιυυ^4» Form Α号Α0101 Page 14 of 16 Page 1002000414-0
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* Cited by examiner, † Cited by third party
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CN106498355A (en) * 2016-10-20 2017-03-15 电子科技大学 A kind of high temperature film sensor antioxidation composite armor and its manufacture method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106498355A (en) * 2016-10-20 2017-03-15 电子科技大学 A kind of high temperature film sensor antioxidation composite armor and its manufacture method
CN106498355B (en) * 2016-10-20 2018-08-21 电子科技大学 A kind of high temperature film sensor anti-oxidant composite armor and its manufacturing method

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