TW201227908A - Embedded electronic device package structure - Google Patents
Embedded electronic device package structure Download PDFInfo
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- TW201227908A TW201227908A TW099146374A TW99146374A TW201227908A TW 201227908 A TW201227908 A TW 201227908A TW 099146374 A TW099146374 A TW 099146374A TW 99146374 A TW99146374 A TW 99146374A TW 201227908 A TW201227908 A TW 201227908A
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- Taiwan
- Prior art keywords
- electronic component
- layer
- substrate
- disposed
- shielding layer
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 62
- 239000002184 metal Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 239000000565 sealant Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000003475 lamination Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 2
- 230000001427 coherent effect Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 83
- 239000010408 film Substances 0.000 description 16
- 239000012790 adhesive layer Substances 0.000 description 9
- 230000000873 masking effect Effects 0.000 description 9
- 239000008393 encapsulating agent Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- VPGRYOFKCNULNK-ACXQXYJUSA-N Deoxycorticosterone acetate Chemical compound C1CC2=CC(=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H](C(=O)COC(=O)C)[C@@]1(C)CC2 VPGRYOFKCNULNK-ACXQXYJUSA-N 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/24195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
201227908201227908
P51990051TW 35306twf.doc/I 六、發明說明: 【發明所屬之技術領域】 結構》且特別是有 本發明是有關於一種電子元件封筆 關於一種内埋式電子元件封裝結構。、 【先前技術】 針對目前電子產品之電磁 ㈣伽⑽,網而導致電子裝置‘==〇nyetiC 降低’常見之手段是在基板上所設置; =;=屬蓋做為電磁波干擾防=3 = =裝體的整體厚度時’則需要探討内埋電 【發明内容】 本發明提供-種電子元件封裝體,具有 :兀件、第-遮蔽層以及第—介 、西 置於-基板上並電性連結至。】〖電子讀配 該基板上,且至少包〜笛一:板_ 1遮蔽層,配置於 側面盥部份々亥美柘電子兀件之上表面與至少— 、I 刀絲板。4 一介電結構, 上與該基板上,且覆蓋該第-電子元件。、遮蔽層 電子ΪΓ服_埋式電子元件龍體,具有至少- 生:ΐ;層與一封膠體。該電子元件配置於二叠 層上並相轉4層,層具有至少—介電結ς 201227908P51990051TW 35306twf.doc/I VI. Description of the Invention: [Technical Field of the Invention] Structure and in particular The present invention relates to an electronic component sealing pen. A buried electronic component packaging structure. [Prior Art] For the current electromagnetic (four) gamma (10) of electronic products, the net causes the electronic device '==〇nyetiC to decrease'. The common means is set on the substrate; =; = cover is used as electromagnetic interference prevention = 3 = = In the case of the overall thickness of the package, it is necessary to investigate the buried electricity. [Invention] The present invention provides an electronic component package having: a member, a first-shielding layer, and a first-west, a west-on-substrate and a power supply. Sexual link to. 】 〖Electronic reading on the substrate, and at least package ~ flute one: board _ 1 shielding layer, placed on the side of the 盥 柘 柘 柘 柘 之上 之上 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 之上 之上 。 。 。 。 。 。 。 4 a dielectric structure overlying the substrate and covering the first electronic component. Shielding layer Electronic _ _ buried electronic components dragon body, with at least - raw: ΐ; layer and a colloid. The electronic component is disposed on the second stack and is transferred to 4 layers, and the layer has at least - dielectric junction 201227908
P51990051TW 35306twf.doc/I 與一金屬圖案結構配置於該介電結構下方。該遮蔽屛, 置於該疊層上j«至少包覆該電子^件之上表面與至^配 面與部份該疊層的該金屬圖案結構。該封膠體,配^於^ 疊層上並包封住该電子元件與該遮蔽層。 _ ' 基於上述,本發明之電子元件封裝體的製作方法,θ 在上模封膠之前或疊層壓合之間,將電子元件的卜/ ’疋 及周圍覆蓋至少一遮蔽層。 上方或/ 為讓本發明之上述特徵能更明顯易懂,下文特兴 例,並配合所附圖式作詳細說明如下。 、牛貫施 【實施方式】 本發明於進行内埋電子元件封裝製程中,同步形 達成電磁干擾屏蔽(EMI shielding)的架構。主要是利=可 埋式電子元件社該/及關覆蓋至少—金屬薄膜,= 電子元件受到金屬薄膜的包覆並免於電磁干擾,、侍 強化電子树料熱賴躲。 復㈣也可 ^明中可_電鍍、或者以膠膜貼附或者以 之"面層壓合方式,附加金屬薄膜至内埋式 ,、化 =專膜二可設計不同圖案形式’以改善防鹱效:及二加 』者力’或減少金㈣膜貼附過程中氣泡產生的可能性。 圖1A至圖ip繪示依照本發明之一實施例之一 ,件封裝結構的製作流程剖面示意圖。在此 =子:件可為一半導體晶片或半導體元件,其例= 動几件如電晶體、二極體、發光二極體aEn被P51990051TW 35306twf.doc/I and a metal pattern structure are disposed under the dielectric structure. The masking layer is disposed on the stack to cover at least the upper surface of the electronic component and the metal pattern structure of the surface and a portion of the laminate. The encapsulant is disposed on the laminate and encapsulates the electronic component and the shielding layer. Based on the above, in the method of fabricating the electronic component package of the present invention, θ covers at least one shielding layer between the upper and lower layers of the electronic component before or during lamination. Above or in order to make the above features of the present invention more comprehensible, the following detailed description will be described in detail with reference to the accompanying drawings. [Embodiment] The present invention realizes an EMI shielding structure in a buried electronic component packaging process. The main reason is that the illuminable electronic component company should cover at least the metal film, = the electronic component is covered by the metal film and is free from electromagnetic interference, and the electric tree material is strengthened. The compound (4) can also be electroplated, or attached with a film or laminated with a metal film to the embedded type, and the film can be designed to improve the pattern. Anti-mite effect: and the possibility of bubble generation during the process of attaching the film. 1A to 1 are schematic cross-sectional views showing a manufacturing process of a package structure according to an embodiment of the present invention. Here, the sub-piece can be a semiconductor wafer or a semiconductor component, and examples thereof include a transistor such as a transistor, a diode, and a light-emitting diode aEn.
201227908 P51990051TW 35306twf.doc/I 動元件如電阻、電容或電感元件等。 請先參考圖1A,首先,提供一基板1〇〇,其中基板 100上具有由至少一介電薄膜1〇2與一黏膠層1〇4所構成 之一疊層101。介電薄膜1〇2的材質為例如聚醯亞胺 (polyimide)或苯基環丁烯(benzoCyCi〇butene’BCB),或 ABF 而黏膠層104的材質例如是熱固性黏膠或者熱塑性黏膠。 接著’依序將電子元件l〇6a/106b/106c面朝下(face-down) 配置於黏膠層104之上。於此實施例中,電子元件l〇6a 例如是1C晶片,電子元件106b例如是被動元件,而電子 元件106c例如是射頻(Radi〇-Frequency,RF)晶片。所謂「面 朝下」即指將電子元件之接觸端105接觸黏膠層104之上 表面。但實際電子元件之種類、相對配置位置或數目並不 限於本案所述,可視產品實際需要調整或變動。 接著,請參考圖1B,形成一遮蔽層110於黏膠層104 的上表面上,覆蓋住電子元件l〇6a/106b/106c。遮蔽層110 的材質例如是銘或銅金屬。形成遮蔽層110的方法例如是 化學電鍍或者減:鑛(sputter)方式電鑛紹或銅或其他金屬如 銀(Ag)鎳(Ni)薄膜、或者複數層金屬薄膜至電子元件表 面上’或者以銅膠帶或非金屬導電碳膠帶貼附方式至電子 元件表面上。遮蔽層110更可包括一黏著層(未圖示)以 幫助平整貼附至電子元件表面上。 遮蔽層110至少覆蓋住電子元件106a/106b/106c之上 表面與部份側表面以及部份疊層101。遮蔽層110雖然以 一「層」表之,但實際上可以是不連續、離散的金屬圖案 201227908201227908 P51990051TW 35306twf.doc/I Dynamic components such as resistors, capacitors or inductors. Referring first to FIG. 1A, first, a substrate 1 is provided, wherein the substrate 100 has a laminate 101 of at least one dielectric film 1〇2 and an adhesive layer 1〇4. The material of the dielectric film 1〇2 is, for example, polyimide or benzocycene butene (BCB), or ABF, and the material of the adhesive layer 104 is, for example, a thermosetting adhesive or a thermoplastic adhesive. Next, the electronic components 10a/106b/106c are sequentially disposed on the adhesive layer 104 face-down. In this embodiment, the electronic component 106a is, for example, a 1C chip, the electronic component 106b is, for example, a passive component, and the electronic component 106c is, for example, a radio frequency (RF) chip. By "face down" is meant contacting the contact end 105 of the electronic component with the upper surface of the adhesive layer 104. However, the types, relative positions, or numbers of actual electronic components are not limited to those described in this case, and may be adjusted or changed depending on the actual needs of the product. Next, referring to FIG. 1B, a shielding layer 110 is formed on the upper surface of the adhesive layer 104 to cover the electronic components 10a/106b/106c. The material of the shielding layer 110 is, for example, a metal or a copper metal. The method of forming the masking layer 110 is, for example, electroless plating or subtraction: a sputter type electroplating or copper or other metal such as a silver (Ag) nickel (Ni) film, or a plurality of metal films onto the surface of an electronic component' or A copper tape or a non-metallic conductive carbon tape is attached to the surface of the electronic component. The masking layer 110 may further include an adhesive layer (not shown) to help flatten the attachment to the surface of the electronic component. The masking layer 110 covers at least the upper surface and the partial side surface of the electronic component 106a/106b/106c and the partial laminate 101. Although the shielding layer 110 is represented by a "layer", it may actually be a discontinuous, discrete metal pattern 201227908
P51990051TW 35306twf.doc/I 區塊,而非連續的薄膜層。一般來說,對應於 件,遮蔽層110包括不同圖案區塊,但該些圖括兀 寸至少要大於其所對應覆蓋的電子元件,以期覆^意的尺 電子元件之上表面與部份側表面( = 層表面)。換言之,遮蔽層110最好能夠完全地包;H 兀件106以提供電磁干擾屏蔽之功效,或至 = 所對應的電子元件刚之整個上表面與至少盍其 蔽之功效。此外,於其他實施例令,遮: 曰可Α具有不_案設計,端視所欲遮蔽之頻率而定。P51990051TW 35306twf.doc/I Block, not a continuous film layer. Generally speaking, corresponding to the member, the shielding layer 110 includes different pattern blocks, but the figures include at least the electronic components corresponding to the corresponding covering, so as to cover the upper surface and the partial side of the electronic component. Surface ( = layer surface). In other words, the masking layer 110 is preferably fully packaged; the H-clamping member 106 provides the effect of electromagnetic interference shielding, or the effect of the corresponding electronic component just over the entire upper surface and at least obscuring it. In addition, in other embodiments, the mask may have a design that depends on the frequency of the desired mask.
圖2A-2E是遮蔽層之部份所包含圖案區塊的 思圖範例’以顯示遮蔽層對應不同電子元件的不同圖案設 :十:參考圖2A所示之十字形金屬圖案21〇,虛線區標示出 電子兀件之上表面大小,而遮蔽層(十字形金屬圖案21〇) 可凡全包覆電子元件之上表面與四侧邊表面。相對於圖 2A ’可見圖2B之金屬圖案21〇設計具有均句分佈的孔洞 21a ’孔洞之形狀、尺寸與分佈密度等可視所欲遮蔽之頻率 而更動。圖2C-2D之金屬圖案21〇設計具有等距分佈、交 錯的網格狀間隙21b/21c ’但兩者網格狀間隙設計排列不 同置於圖2E所示之T字形金屬圖案21〇乃是由等距分 佈、交錯的網狀金屬條紋21d所構成(亦可視為具有棋盤 狀空格)’虛線區標示出電子元件之上表面大小,而τ字 形盘屬圖案210可完全包覆電子元件之上表面與三固側邊 表面。其中金屬條紋21d之寬度d與金屬條紋21d之間隔 D之比例可視所欲遮蔽之頻率而更動設計。圖2A與圖2E 2012279082A-2E are schematic diagrams of a pattern block included in a portion of the mask layer to display different patterns of different electronic components corresponding to the mask layer: X: a cross-shaped metal pattern 21〇 shown in FIG. 2A, a dotted line region The size of the upper surface of the electronic component is indicated, and the shielding layer (the cross-shaped metal pattern 21〇) can completely cover the upper surface and the four side surfaces of the electronic component. With respect to Fig. 2A', it can be seen that the metal pattern 21 of Fig. 2B is designed such that the shape, size and distribution density of the holes 21a' having the uniform distribution of the holes can be changed by the frequency of the desired shielding. The metal pattern 21〇 of FIGS. 2C-2D is designed to have an equidistantly distributed, staggered grid-like gap 21b/21c′ but the grid-like gap design arrangement is different. The T-shaped metal pattern 21 shown in FIG. 2E is Consisting of equidistantly distributed, staggered mesh metal strips 21d (also considered to have checkerboard spaces) 'the dotted line area indicates the surface size of the electronic component, and the τ-shaped disc pattern 210 can completely cover the electronic component Surface and three solid side surfaces. The ratio of the width d of the metal strip 21d to the interval D of the metal stripe 21d can be more dynamically designed depending on the frequency of the desired shading. Figure 2A and Figure 2E 201227908
P51990051TW 35306twf.doc/I 或可視為兩種不同形狀與尺寸大小孔洞之設叶。 此處,由於遮蔽層完全包覆電子元件之上表面與至少 -個側邊表面,而提供電子元件良好之電磁干擾屏蔽二 果’減少電子元件之電磁干擾。同時,遮蔽層之金屬材: 也具有良好的導熱散熱效果,而作為散熱片之用。 貝 接著,請參考圖1C,進行一封膠製程而形成—封 膠體120配置於疊層1〇1與基板100之上,且包覆電子^ φ 件l〇6(106aM〇6b/l〇6c)、遮蔽層11〇與覆蓋至少j部份= 黏膠層104。封膠製程中,一般會使用模型而便於特定位 置注入封膠物質,而在封膠物質固化形成封膠體12〇後, 再移除模型。封膠物質例如為熱固性聚合物、環氧基樹月t (epoxy resin)、聚醯亞胺(polyimide)或苯基環"丁 ^ (benzocyclobutene,BCB)。 接著,請參考圖1D ’移除基板1〇〇後進行一切q譽 程修整疊層101使其側邊與封膠體120對齊,並將整體^ 構上下倒置,亦即,封膠體12〇位於下方,而介電薄膜1〇1 _ 位於最上方。 < 、 參考圖1E’圖案化介電薄膜1〇2與黏膠層1〇4而形成 包含開孔V的圖案化疊層101a ,導線開孔v暴露出電子 元件106之接觸端1〇5。之後,於圖案化介電薄膜1〇2&上 升> 成導電圖案130並覆蓋開孔V而與電子元件之接觸 端105接觸;因此,不同電子元件之間可透過導電圖案 而相互電性連結。此處,圖案化疊層l〇la與導電圖案13〇 可視為積層基板(built-up substrate)之一疊層。所謂疊芦或P51990051TW 35306twf.doc/I can be viewed as a set of holes of two different shapes and sizes. Here, since the shielding layer completely covers the upper surface of the electronic component and at least one of the side surfaces, the electronic component is provided with good electromagnetic interference shielding, and the electromagnetic interference of the electronic component is reduced. At the same time, the metal material of the shielding layer: also has a good heat dissipation effect, and is used as a heat sink. Next, please refer to FIG. 1C, and a glue process is formed to form a sealant 120 disposed on the laminate 1〇1 and the substrate 100, and the coated electrons φ pieces l〇6 (106aM〇6b/l〇6c) ), the shielding layer 11 〇 and covering at least the j portion = the adhesive layer 104. In the encapsulation process, the model is generally used to facilitate the injection of the encapsulant at a specific location, and after the encapsulant is solidified to form the encapsulant 12, the model is removed. The sealant is, for example, a thermosetting polymer, an epoxy resin, a polyimide or a benzocyclobutene (BCB). Next, please refer to FIG. 1D 'Removing the substrate 1 〇〇 and then performing all the steps of the trimming layer 101 so that the sides thereof are aligned with the encapsulant 120, and the whole structure is inverted upside down, that is, the encapsulant 12 〇 is located below , and the dielectric film 1〇1 _ is located at the top. < Referring to FIG. 1E', the patterned dielectric film 1〇2 and the adhesive layer 1〇4 are formed to form a patterned laminate 101a including openings V, and the wire openings v expose the contact ends 1电子5 of the electronic components 106. . Thereafter, the patterned dielectric film 1〇2 & rises into the conductive pattern 130 and covers the opening V to be in contact with the contact end 105 of the electronic component; therefore, the different electronic components can be electrically connected to each other through the conductive pattern . Here, the patterned laminate 10a and the conductive pattern 13A may be regarded as one of a laminate of a built-up substrate. Stacked reed or
201227908 i-3iyyuuilTW 35306twf.doc/I 積層基板’例如是兩層疊層、四層或八層疊層的印刷電路 板基板。 參考圖1F,於圖案化疊層i〇ia與導電圖案13〇上形 成另一圖案化疊層140與導電圖案150,作為積層基板 (built-up substrate)之另一疊層。封膠體12〇與其包覆之電 子元件以及其上的疊層結構10^/^0/140/150共同構成電 子元件封裝體10。此處’僅繪示出在封膠體12〇上形成兩 層積層基板’但是,本發明之範圍並不限於此,而可重複 數次前述步驟,形成多層積層基板。 圖3A至圖3E繪示依照本發明之另一實施例之一種電 子元件封裝結構的製作流程剖面示意圖。 請參考圖3A,提供一基板3〇〇,基板3〇〇可為一積層 基板’其例如是一兩層積層的印刷電路板基板。基板3〇〇 實際上可視為是所謂第一疊層,由第一介電層3〇4、下方 的第一金屬層302與上方的第二金屬層3〇6交互疊合而 成,並透過多個第一導通孔(vias) 3〇8使上、下層之金屬層 306、302電性連接。接著’依序將電子元件31〇面朝下 (faCe-d〇wn)配置於基板300之上。電子元件31〇可透過覆 晶接合技術而電性連接至基板3〇〇上。第一、第二金屬層 302 306包括不同的線路圖案…卜丨吨pattern)與接觸塾或 鲜塾。 參考圖3B ’提供具有第三金屬層312與第二介電層 314之壓合層311。其中第三金屬層312可包括連續或離散 的金屬圖案區塊’其位置對應於其下之電子元件31〇位201227908 i-3iyyuuilTW 35306twf.doc/I The laminated substrate 'is, for example, a printed circuit board substrate of two laminated layers, four layers or eight layers. Referring to Fig. 1F, another patterned laminate 140 and conductive pattern 150 are formed on the patterned stack i ia and conductive pattern 13 , as another stack of built-up substrates. The encapsulant 12A constitutes the electronic component package 10 together with the electronic component coated thereon and the laminated structure 10^/^0/140/150 thereon. Here, only two laminated substrates are formed on the sealant 12'. However, the scope of the present invention is not limited thereto, and the above steps may be repeated several times to form a multilayer laminated substrate. 3A-3E are cross-sectional views showing the fabrication process of an electronic component package structure in accordance with another embodiment of the present invention. Referring to Fig. 3A, a substrate 3 is provided. The substrate 3 can be a laminated substrate. For example, it is a two-layer laminated printed circuit board substrate. The substrate 3 is actually regarded as a so-called first laminate, which is formed by the first dielectric layer 3〇4, the lower first metal layer 302 and the upper second metal layer 3〇6, and is transparently A plurality of first vias 3〇8 electrically connect the upper and lower metal layers 306 and 302. Next, the electronic component 31 is sequentially disposed on the substrate 300 with the face down (faCe-d〇wn). The electronic component 31 can be electrically connected to the substrate 3 through a flip chip bonding technique. The first and second metal layers 302 306 include different line patterns ... 丨 丨 pattern) with contact 塾 or 塾. A press layer 311 having a third metal layer 312 and a second dielectric layer 314 is provided with reference to FIG. 3B'. Wherein the third metal layer 312 may comprise a continuous or discrete metal pattern block' whose position corresponds to the electronic component 31 underneath
201227908 P51990051TW 35306twf.d〇c/I 置。接著’圖3C所示’利用熱壓合技術,將壓合層3ii 壓合至第一疊層300上,而壓合過程中,由於第:^屬層 312之金屬圖案區塊位置對應於電子元件31〇的:置 三金屬層3丨2會包覆電子元件310之上表面與側表面,’甚 至會覆蓋第一疊層300之第二金屬層3〇6的一部份,而達 到電性連接至第一疊層300 (接地)。 此實施例中,第三金屬層312可視為是電子元件 7,完全包覆電子元件之上表面與至少—個側邊表面,,,、 而提供電子%件良好之電軒擾屏蔽效果,減少電子元件 擾si此外’第三金屬層312覆蓋部份基板,而可 :,此實施例情示第三金屬層包覆基板上 是’亦可視製程或電子元件功能配置, 而僅包覆某些特定電子元件。 八® 例在内埋電子元件的職製輕中,壓合貼附 =、,使其内埋元件被金屬膜包覆,提供多 重保護的功 能。 -墓:ί後’參考圖3D,於第二介電層314中形成多個第 m哲孔316並於第二介電層314上形成第四金屬層 316318與第二金屬層3()6<透過第二導通孔 一導 接。第二介電層314、第四金屬層318與第 成所謂第二疊層320。 包括銅、_;與^四金屬層之材質可以相,或不同,可 ^ "第二金屬層的材質例如是鋁或銅金屬。 一;1電層的材質可以相同或不同,可包括有機化201227908 P51990051TW 35306twf.d〇c/I set. Next, as shown in FIG. 3C, the press-bonding layer 3ii is pressed onto the first laminate 300 by a thermocompression bonding technique, and the metal pattern block position of the first layer 312 corresponds to the electrons during the pressing process. The element 31〇: the three metal layers 3丨2 will cover the upper surface and the side surface of the electronic component 310, and even cover a portion of the second metal layer 3〇6 of the first laminate 300 to reach electricity. Connected to the first stack 300 (ground). In this embodiment, the third metal layer 312 can be regarded as the electronic component 7, completely covering the upper surface of the electronic component and at least one side surface, and providing a good electrical insulation shielding effect of the electronic component. The electronic component is disturbed, and the third metal layer 312 covers a portion of the substrate. However, this embodiment shows that the third metal layer is coated on the substrate, which is also a visual process or an electronic component functional configuration, and only covers certain Specific electronic components. Eight® cases are embedded in the electronic components of the embedded electronic components, and are pressed and attached to, so that the embedded components are covered with a metal film to provide multiple protection functions. -Tomb: </ RTI> </ RTI> Referring to FIG. 3D, a plurality of mth philosophies 316 are formed in the second dielectric layer 314 and a fourth metal layer 316318 and a second metal layer 3 (6) are formed on the second dielectric layer 314. Passing through the second via hole. The second dielectric layer 314, the fourth metal layer 318 and the so-called second laminate 320 are formed. The material of the metal layer including copper, _; and ^ can be phased or different, and the material of the second metal layer is, for example, aluminum or copper metal. 1; 1 electrical layer material can be the same or different, can include organic
201227908 rDiyyuuDlTW 35306twf.doc/I 合物,如聚醯亞胺(polyimide) __ (benzocyclobutene,BCB)、聚亞芳香基趟(parylene)等聚合 物。 參考圖3E,於第一金屬層302之鲜墊302a上直接形 成多個錫球(solder ball) 330。 圖4為本發明之又一實施例之一種電子元件封裝結構 的剖面示意圖。請參考圖4,在本實施例中,電子元件封 裝體40包括一基板400、多個電子元件410、一第一遮蔽 層412、一間介電結構414、一金屬線路結構410、一第二 遮蔽層418、一頂介電結構420以及多個導通孔422。基板 400可為一積層基板,例如是一兩層積層的印刷電路板基 板。電子元件410例如是一高功率晶片,而以覆晶方式與 基板400連結。電子元件41〇配置於基板4〇〇的上表面或 配置於間介電結構414的上表面。第一遮蔽層412配置於 並覆蓋基板400的上表面,且覆蓋電子元件41〇的四個或 至少-個侧壁的部分或全部與/或上表面的部分或全部。第 一遮蔽層412與第二遮蔽層418的材質皆可是例如銅、紹 或銅紹合金,且第—遮蔽層412與第二遮蔽層418的材質 可以相同也可以不同。第二遮蔽層418位於間介電結構414 與金屬線路結構416上,包覆電子元件·的四個或至少 -個側壁的部分或全部與/或上表面的部分或全部並覆蓋 路結構416。其中,第一、第1蔽層 結構416之間可進行絕緣處理以得到 而…連接功能。此外,形成於間介電結構414之多 201227908 lOiyyuwlTW 35306twf.d〇c/l 個導通孔422電性連結金屬線路結構416與基板4〇〇。視 產品設計而定,第一或第二遮蔽層可接地。此外,本實施 例之電子元件封裝體40£包括多個位於基板4〇〇之背表面 的錫球424,其可作為與外界電性連接的接點。 、在本實施例之電子元件封裝體中,第—或第二遮蔽層 可視為-電斜麟蔽(EMI shidd),可倾電子元件免 於外來或内在輕射源的電磁干擾輕射。因此,相較於習知 裝體而言,本實施例之電子元件封裝體不需於 部’不但製_便,更可提供—厚度較薄的域 i十結構,此種設計更可提升電子元件封裝體 ^干”效能。特別是’遮蔽層可選擇性覆蓋特定 電子兀件,或賴料乡韻蔽層⑽ 覆蓋不同層的電子元件,而加強電子元件封二: 的電磁干擾屏蔽效能。 胃&㈣ 在本實施例中,電子元件封裝體⑽可以是 封裝結構或-部份系統級封裝(system_in_pa ^ _综上所述,由於包覆於好元件表面與側邊ϋ 了有效地遮蔽外界電磁干擾輻射,因此可提高本發明:: 二封裝體的電磁干擾賤的效能。本發 : 方法’是在上模封膠之前或應合::件: 容。附者至電子疋件的表面’故與目前既存的封裝製程相 以上實施例的設計在電子元件的上方或/及周圍覆蓋 11201227908 rDiyyuuDlTW 35306twf.doc/I, such as polyimide benzo (but benzocyclobutene, BCB), polyarylene (parylene) and other polymers. Referring to FIG. 3E, a plurality of solder balls 330 are formed directly on the fresh pad 302a of the first metal layer 302. 4 is a cross-sectional view showing an electronic component package structure according to still another embodiment of the present invention. Referring to FIG. 4 , in the embodiment, the electronic component package 40 includes a substrate 400 , a plurality of electronic components 410 , a first shielding layer 412 , a dielectric structure 414 , a metal wiring structure 410 , and a second The shielding layer 418, a top dielectric structure 420, and a plurality of vias 422. The substrate 400 can be a laminate substrate, such as a two-layer laminated printed circuit board substrate. The electronic component 410 is, for example, a high power wafer and is connected to the substrate 400 in a flip chip manner. The electronic component 41 is disposed on the upper surface of the substrate 4A or on the upper surface of the intermediate dielectric structure 414. The first shielding layer 412 is disposed on and covers the upper surface of the substrate 400 and covers part or all of the four or at least one side wall of the electronic component 41 and/or part or all of the upper surface. The material of the first shielding layer 412 and the second shielding layer 418 may be, for example, copper, copper or copper alloy, and the materials of the first shielding layer 412 and the second shielding layer 418 may be the same or different. The second masking layer 418 is disposed on the intermediate dielectric structure 414 and the metal wiring structure 416, covering part or all of the four or at least one side wall and/or the upper surface of the electronic component and covering the via structure 416. Wherein, the first and first masking structures 416 can be insulated to obtain a connection function. In addition, the via 422 is electrically connected to the metal wiring structure 416 and the substrate 4 形成 in the inter-dielectric structure 414. The first or second shielding layer can be grounded depending on the product design. In addition, the electronic component package 40 of the present embodiment includes a plurality of solder balls 424 on the back surface of the substrate 4, which can serve as contacts for electrical connection with the outside. In the electronic component package of the embodiment, the first or second shielding layer can be regarded as an EMI shidd, and the tiltable electronic component is protected from electromagnetic interference light from an external or internal light source. Therefore, compared with the conventional package, the electronic component package of the present embodiment does not need to be "not only" but also provides a thinner domain i-th structure, which can enhance the electronic design. The component package has a "dry" performance. In particular, the 'masking layer can selectively cover a specific electronic component, or the lining layer (10) covers the electronic components of different layers, and enhances the electromagnetic interference shielding effectiveness of the electronic component. Stomach & (4) In this embodiment, the electronic component package (10) may be a package structure or a partial system-level package (system_in_pa ^ _ in summary, due to the surface of the good component and the side edges effectively shielded External electromagnetic interference radiation, thus improving the invention:: The effectiveness of the electromagnetic interference of the two packages. The present invention: The method 'is before the upper mold sealing or should be combined:: piece: capacity. attached to the electronic components The surface is so covered with the existing packaging process phase. The design of the embodiment above is covered above or/and around the electronic component 11
201227908 35306twf.d〇c/I ^屬薄膜,使得電子元件麵金屬薄朗包覆 果。磁干擾屏蔽的效果’同時也可具有良好的導熱散熱效 ^本發此以實施_露如上,然其麟用以 务月’任何關技術領域巾具有通常知識者,在 本《明之精神和範圍内,當可作些許之更動與潤飾, 發明之保護範圍當視後附之申料補_界定者為準。 【圖式簡單說明】 一圖1A至圖1F繪示依照本發明之一實施例之一種電子 元件封裝體的製作流程剖面示意圖。 圖2A-2E是遮蔽層之部份所包含圖案區塊的上視示 意圖範例。 圖3 A至圖3 e繪示依照本發明之另一實施例之一種電 子元件封裝結構的製作流程剖面示意圖。 圖4為本發明之又一實施例之一種電子元件封裝結構 的剖面示意圖。 【主要元件符號說明】 10、40 :電子元件封裝體 100、 300、400 :基板 101、 140、320 :疊層 102 :介電薄膜 104 :黏膠層 £ 12201227908 35306twf.d〇c/I ^ is a thin film that makes the surface of the electronic component thin and thin. The effect of magnetic interference shielding can also have good heat dissipation and heat dissipation effect. This is to implement the above-mentioned _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Within, when a little change and refinement can be made, the scope of protection of the invention shall be subject to the definition of the appended article. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A to FIG. 1F are schematic cross-sectional views showing a manufacturing process of an electronic component package in accordance with an embodiment of the present invention. 2A-2E are top schematic illustrations of the pattern blocks included in a portion of the masking layer. 3A to 3e are cross-sectional views showing the manufacturing process of an electronic component package structure according to another embodiment of the present invention. 4 is a cross-sectional view showing an electronic component package structure according to still another embodiment of the present invention. [Description of main component symbols] 10, 40: Electronic component package 100, 300, 400: Substrate 101, 140, 320: Stack 102: Dielectric film 104: Adhesive layer £ 12
201227908 P51990051TW 35306twf.doc/I 105 :接觸端 106、106a、106b、106c、310、410 :電子元件 110 :遮蔽層 120 :封膠體 130、150 :導電圖案 210 :金屬圖案 21a :孔洞 21b、21c :網狀空隙 21d ··網狀金屬條紋 302 :第一金屬層 302a :銲墊 304 第一介電層 306 第二金屬層 308 第一導通孔 311 壓合層 312 第三金屬層 314 第二介電層 316 第二導通孔 318 第四金屬層 412 第一遮蔽層 414 間介電結構 416 金屬線路結構 418 第二遮蔽層 420 頂介電結構 13 201227908201227908 P51990051TW 35306twf.doc/I 105 : contact terminals 106, 106a, 106b, 106c, 310, 410: electronic component 110: shielding layer 120: encapsulant 130, 150: conductive pattern 210: metal pattern 21a: holes 21b, 21c: Mesh void 21d · mesh metal strip 302: first metal layer 302a: pad 304 first dielectric layer 306 second metal layer 308 first via hole 311 press layer 312 third metal layer 314 second dielectric Layer 316 second via 318 fourth metal layer 412 first shielding layer 414 dielectric structure 416 metal wiring structure 418 second shielding layer 420 top dielectric structure 13 201227908
lyyuuD 1TW 35306twf.docA 422 :導通孔 330、424 :錫球 V :開孔lyyuuD 1TW 35306twf.docA 422 : via hole 330, 424 : solder ball V : opening
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TWI553818B (en) * | 2014-08-08 | 2016-10-11 | 日月光半導體製造股份有限公司 | Method of manufacturing electronic package module and structure of electronic package module |
TWI704658B (en) * | 2019-06-04 | 2020-09-11 | 恆勁科技股份有限公司 | Package substrate |
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US5838551A (en) * | 1996-08-01 | 1998-11-17 | Northern Telecom Limited | Electronic package carrying an electronic component and assembly of mother board and electronic package |
DE602005013084D1 (en) * | 2005-09-15 | 2009-04-16 | Infineon Technologies Ag | Electromagnetic shielding of packages with a laminate substrate |
CN101663926B (en) * | 2007-05-02 | 2011-10-05 | 株式会社村田制作所 | Component-incorporating module and its manufacturing method |
US7553752B2 (en) * | 2007-06-20 | 2009-06-30 | Stats Chippac, Ltd. | Method of making a wafer level integration package |
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TWI704658B (en) * | 2019-06-04 | 2020-09-11 | 恆勁科技股份有限公司 | Package substrate |
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