201226644 四、指定代表圖： (一) 本案指定代表圖為··第（1 )圖。 (二) 本代表圖之元件符號簡單說明： 01集板 〇2金屬奈米線 03針頭 04液滴 05移動平台 高壓源(DC、AC) 07金屬MO 08透明電極201226644 IV. Designated representative map: (1) The representative representative of the case is the picture (1). (2) Simple description of the symbol of the representative figure: 01 set board 〇 2 metal nano line 03 needle 04 drop 05 mobile platform high voltage source (DC, AC) 07 metal MO 08 transparent electrode
09110 1〇 P-CIGS 11紅螢光粉 12綠螢光粉 13藍螢光粉 14玻璃板 15 液晶（liquid crystal) 五、 本案若有化學式時，請揭示最能顯示發明特徵的化學式： 六、 發明說明： 【發明所屬之技術領域】 本發明說明一種近場的靜電紡絲技術，尤其是強調近場電紡與控制金 屬奈米線間距、金屬奈米線線徑、金屬奈米線堆疊高度、透光^及導 【先前技術】 201226644 氧化銦錫στο)是-種銦氧化物（In2〇3)and錫(IV族）氧化物（Sn〇2) 的混合物，通常質量比為90% In2〇3，10% Sn〇2。它在薄膜狀時，為透 明無色，但在塊狀態時，它呈黃偏灰色。氧化銦錫主要的特性是其電 ，傳導和光學義的組合。然而，在薄败積中需要作出妥協因為 高濃度電荷載流子將會增加材料的電導率，但會降低它的透明度。氧 化銦錫薄膜最通常是用電子束蒸發、物理氣相沉積、或者—些进射沉 積技術的方法沉積到表面。因為銦的價格高昂和供應受限、IT〇層的脆 弱和柔祕的缺乏、以及昂貴__要求真空，其它取代物正被設 法尋找。 近年來興起的解決方案’是使时米碳管或銀奈顿，因為在低電阻 的交界處，，米結構能有效降低薄膜電阻，但是奈米碳管與石墨交界 面的電阻過高；而銀奈米線的高寬比被限制為趨近於1〇〇，且銀相 貴。 造成下列五項較為重大的缺失： ⑴，錫氧化物價格高昂、脆性_、以及高真空沉積是其顧的限制。 ⑵高濃度魅麵^將會增加機的電轉，但會降低它的透明度。 ⑶奈米碳管與石墨交界面的電阻過高；祕奈雜的高寬比被限制為 趨近於100，且銀相對昂貴。 (4) 無法準確控制金屬奈米線之高寬比、間距、線徑等。 (5) 無法應用於可撓式集板。 在2009年美國的張傑(Dr.chieh chang)及臺灣的傅尹坤(DrMichad趾）09110 1〇P-CIGS 11 red fluorescent powder 12 green fluorescent powder 13 blue fluorescent powder 14 glass plate 15 liquid crystal (liquid crystal) 5. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: [Description of the Invention] [Technical Field] The present invention describes a near-field electrospinning technique, in particular, emphasizing near-field electrospinning and controlling metal nanowire spacing, metal nanowire diameter, and metal nanowire stacking height , light transmission ^ and guide [Prior Art] 201226644 Indium tin oxide στο) is a mixture of indium oxide (In2〇3) and tin (IV) oxide (Sn〇2), usually 90% by mass In2 〇3,10% Sn〇2. It is transparent and colorless in the form of a film, but it is yellowish gray in the block state. The main characteristic of indium tin oxide is its combination of electrical, conductive and optical properties. However, compromises are needed in thin failures because high concentrations of charge carriers will increase the conductivity of the material, but will reduce its transparency. Indium tin oxide thin films are most commonly deposited onto the surface by electron beam evaporation, physical vapor deposition, or by some deposition techniques. Because of the high price and limited supply of indium, the lack of brittleness and softness of the IT layer, and the high cost of vacuum, other alternatives are being sought. The solution that has arisen in recent years is to make the carbon nanotubes or silver-nine, because at the junction of low resistance, the structure of the rice can effectively reduce the sheet resistance, but the resistance of the interface between the carbon nanotubes and the graphite is too high; The aspect ratio of the silver nanowire is limited to approaching 1〇〇, and the silver phase is expensive. The following five major losses are caused: (1) The high price of tin oxide, brittleness, and high vacuum deposition are their limitations. (2) High concentration of charm 2 will increase the machine's electrical rotation, but will reduce its transparency. (3) The resistance of the interface between the carbon nanotubes and the graphite is too high; the aspect ratio of the secret is limited to close to 100, and the silver is relatively expensive. (4) It is impossible to accurately control the aspect ratio, pitch, wire diameter, etc. of the metal nanowire. (5) Cannot be applied to flexible boards. In 2009, Dr. Chieh Chang of the United States and Fu Yinkun of Taiwan (DrMichad's toe)
Direct-Write Piezoelectric Pvdf Nanogenerator) 可在奈米發電機上利用8 5mv的輸出電壓，從單—的聚乙稀奈米纖 維得到輸出功率7.2pw(US patent 19241)。利用近場（距離小於 _咖），將金屬奈米線射在集板上，並控制其線間距、粗細、透光率， 進而使可撓性增加。 【發明内容】 本發明目的是利用電紡作為—種新的製程去製作高性能、低成本、高 201226644 延展性的金屬奈米線透明電極。 ⑴將金屬顏加表面活㈣丨溶解於㈣巾（例如：硫酸銅加表面活性 劑加聚乙二醇(PEO)溶於水中）。 (2)利用靜電紡絲技術控制金屬奈米線間距及線徑，並射到一集板上； 調整電紡條件可使其金屬奈米線的直徑範圍約在⑽9◦。⑽。、 ⑶將金屬聚合物纖維在空氣中織(例如：銅奈米_ 5⑻度锻燒二 小時），以除去聚合物(銅奈米線轉為深褐色氧化銅奈米線 ⑷將金屬奈米線放置氫氣t退火產生還原反應(例如：鋼用产退 火1小時’使其還原成紅色）。 (5)測試其電性及可撓度。 【實施方式】 =參至圖七，圖-至圖七為本發明之近場靜電纺絲製程示音 ，。本U是提供-種將金屬奈鱗Q2自外加高壓源針頭 〇1上，達到比傳統ITO更佳之效能。 集板 所示，本個將針頭G3外加—高壓電源⑽；將集㈣ 動+台05上，針頭與集板間距離為近場⑽麵⑽）。 、 ^如圖二所示，_移鮮台G5及緣電源⑽，控制 =距與線徑，電紡提供一個靈活的方法去對齊調 = 未線陣列；反覆其步驟，堆疊金屬奈米陣列，如圖六所示。成金屬不 ，由於金屬奈米線獨特的形成過程， m物纖維與金屬奈^ =所=介面’透過實驗驗證二金屬奈米線確實融合 接觸，有效的大幅降低電阻。 咫而非早純 如圖三所示 201226644 如圖四所示，為該靜電紡絲製程簡易流程圖。 如圖五所示，附著在集板〇〗表面上之金屬奈米線陣列，其具透光性， 靜電紡絲技術可大量生產優良透明電極。一般情況下，2〇〇Ω/ιη2，透光 率可達96%，· 50Ω/πι2，透光率可達9〇% ; ί2Ω/π]2，透光率可達8⑽。 如圖七所示，該成品透明電極〇8應用於太陽能板(SdarceUs)上。 二圖八所不，該成品透明電極應用於卿卿岣础如Direct-Write Piezoelectric Pvdf Nanogenerator) The output power of 8.5pw (US patent 19241) is obtained from a single-polyethylene nanofiber using an output voltage of 85 mV on a nano generator. Using the near field (distance less than _ coffee), the metal nanowire is shot on the collecting plate, and the line spacing, thickness, and light transmittance are controlled, thereby increasing the flexibility. SUMMARY OF THE INVENTION The object of the present invention is to use electrospinning as a new process to produce a high performance, low cost, high 201226644 ductility metal nanowire transparent electrode. (1) Dissolve the metal surface plus the surface (4) 丨 in (4) towel (for example: copper sulfate plus surfactant plus polyethylene glycol (PEO) dissolved in water). (2) The electrospinning technique is used to control the pitch and wire diameter of the metal nanowires and to shoot on a set of plates; the electrospinning conditions can be adjusted so that the diameter of the metal nanowires is about (10) 9 ◦. (10). (3) The metal polymer fiber is woven in air (for example: copper nano _ 5 (8) degree calcined for two hours) to remove the polymer (the copper nanowire turns into a dark brown copper oxide nanowire (4) to the metal nanowire Place hydrogen gas to anneal to produce a reduction reaction (for example, steel is annealed for 1 hour to reduce it to red). (5) Test its electrical properties and flexibility. [Embodiment] = Refer to Figure 7, Figure 7 to Figure 7. For the near field electrospinning process of the present invention, the U is provided with a kind of metal Nylon Q2 from the external high voltage source needle 〇1 to achieve better performance than the conventional ITO. The board shows that this will Needle G3 plus - high voltage power supply (10); set (four) move + station 05, the distance between the needle and the set plate is near field (10) face (10)). ^ As shown in Figure 2, _ shifting station G5 and edge power (10), control = distance and wire diameter, electrospinning provides a flexible way to align the = non-line array; repeat its steps, stacking metal nano-array, As shown in Figure 6. The metal formation is not. Due to the unique formation process of the metal nanowire, the m-fiber and the metal nano-^==interface' verify that the two-metal nanowires are indeed fused, effectively reducing the electrical resistance.咫, not early as shown in Figure 3 201226644 As shown in Figure 4, is a simple flow chart of the electrospinning process. As shown in Fig. 5, the metal nanowire array attached to the surface of the slab is light transmissive, and the electrospinning technology can mass produce excellent transparent electrodes. In general, 2〇〇Ω/ιη2, the light transmittance can reach 96%, · 50Ω/πι2, the light transmittance can reach 9〇%; ί2Ω/π]2, the light transmittance can reach 8(10). As shown in Fig. 7, the finished transparent electrode crucible 8 is applied to a solar panel (SdarceUs). The second figure is not, the finished transparent electrode is applied to Qingqing Ruanru
Display/Light Emitting Di〇des)上。 本發明根據實驗結果，得知全凰太，ώ 生-個連續線，以覆蓋整個表面j線可延伸非常長，透過靜電可產 使其金屬奈米線可達_高的“在加工雜中’開發_的突破點 約100咖的高寬比）。^見比（例如：銅奈米線可長達lcm直徑Display/Light Emitting Di〇des). According to the experimental results, the invention knows that the whole phoenix is too large, and the continuous line is extended to cover the entire surface, and the j-line can be extended very long, and the metal nanowire can be produced through the static electricity to reach the high _ high in the processing 'Development_ breakthrough point about 100% of the aspect ratio.) ^ See ratio (for example: copper nanowire can be up to lcm diameter
圖式簡單說明】 我之發明之電紡製程方法示意圖 圖 圖示之符號說明 〇1集板03針頭 02金屬奈米線 04液滴 05移動平台 07金屬Μ0 09 ΙΤ0 06高壓源(DC、AC) 08透明電極Brief description of the diagram] The symbol of the electrospinning process diagram of my invention is illustrated by the symbol 〇1 set plate 03 needle 02 metal nanowire 04 droplet 05 mobile platform 07 metal Μ 0 09 ΙΤ 0 06 high voltage source (DC, AC) 08 transparent electrode
10 P'CIGS 11紅螢光粉 12綠螢光粉 201226644 14玻璃板 13藍螢光粉 15 液晶（liquid crystal)10 P'CIGS 11 Red Fluorescent Powder 12 Green Fluorescent Powder 201226644 14 Glass Plate 13 Blue Fluorescent Powder 15 Liquid Crystal