TW201226644A - Manufacture of tunable transparency and resistance for electrode layers via near-field electrospinning - Google Patents

Abstract

Transparent electrodes, which are widely used in displays and solar cells, are predominately utilized indium tin oxide film (ITO). However, several drawbacks such as high price (limited resources), brittleness and requirement of high vacuum deposition conditions are the driving forces for next generation of electrode development. Currently, the emerging solution is using carbon nanotubes or silver nanowires due to low junction resistance. In fact, nano-structure can effectively reduce the sheet resistance, however, the interface resistances of carbon nanotubes and graphite are desperately to minimize. Moreover, existing technology to grow silver nanowires are limited to 100 aspect ratio (length-to-diameter) as well as relatively expensive material cost. We propose a low-cost and scalable electrospinning process to fabricate metallic nanowire arrays such that high-performance transparent electrode can be obtained. Typically, electrode conductivity (resistance) and transparency are two key factors to be considered for a large scale adoption. Commercially, solar cells and liquid crystal displays are seeking electrode resistance less than 20 Ω /m<SP>2</SP>, to avoid unnecessary voltage drops and additional heat consumption during operation. Traditionally, ITO is widely used in various optoelectronic devices, transparent electrodes, and the increased demand for electronic products in recent years, making the ITO prices skyrocketing in the past decade,. Moreover, the ITO film is brittle and fragile to sustain significant deformation for flexible substrates. The present invention shows a manufacture method for metallic nanowires, aims to replace traditional ITO in terms of high performance and high scalability. This invention includes the followings: (1) the metal salts, solutions and various surfactants are dissolved in a solvent by magnetically stirred, (2) Set substrate plate in a mechanically mobile platform, through the mobile platform to control the nanowire array spacing, (3) applied high voltage using DC power supply and through a needle, nanowires can be electrically stretched and deposited. Furthermore, adjusting high voltage and electric field can effectively control the diameters metal nanowire, (4) calcined thoroughly in air for a period, (5) hydrogen annealing for later testing.

Description

201226644 IV. Designated representative map: (1) The representative representative of the case is the picture (1). (2) Simple description of the symbol of the representative figure: 01 set board 〇 2 metal nano line 03 needle 04 drop 05 mobile platform high voltage source (DC, AC) 07 metal MO 08 transparent electrode

09110 1〇P-CIGS 11 red fluorescent powder 12 green fluorescent powder 13 blue fluorescent powder 14 glass plate 15 liquid crystal (liquid crystal) 5. If there is a chemical formula in this case, please reveal the chemical formula that best shows the characteristics of the invention: [Description of the Invention] [Technical Field] The present invention describes a near-field electrospinning technique, in particular, emphasizing near-field electrospinning and controlling metal nanowire spacing, metal nanowire diameter, and metal nanowire stacking height , light transmission ^ and guide [Prior Art] 201226644 Indium tin oxide στο) is a mixture of indium oxide (In2〇3) and tin (IV) oxide (Sn〇2), usually 90% by mass In2 〇3,10% Sn〇2. It is transparent and colorless in the form of a film, but it is yellowish gray in the block state. The main characteristic of indium tin oxide is its combination of electrical, conductive and optical properties. However, compromises are needed in thin failures because high concentrations of charge carriers will increase the conductivity of the material, but will reduce its transparency. Indium tin oxide thin films are most commonly deposited onto the surface by electron beam evaporation, physical vapor deposition, or by some deposition techniques. Because of the high price and limited supply of indium, the lack of brittleness and softness of the IT layer, and the high cost of vacuum, other alternatives are being sought. The solution that has arisen in recent years is to make the carbon nanotubes or silver-nine, because at the junction of low resistance, the structure of the rice can effectively reduce the sheet resistance, but the resistance of the interface between the carbon nanotubes and the graphite is too high; The aspect ratio of the silver nanowire is limited to approaching 1〇〇, and the silver phase is expensive. The following five major losses are caused: (1) The high price of tin oxide, brittleness, and high vacuum deposition are their limitations. (2) High concentration of charm 2 will increase the machine's electrical rotation, but will reduce its transparency. (3) The resistance of the interface between the carbon nanotubes and the graphite is too high; the aspect ratio of the secret is limited to close to 100, and the silver is relatively expensive. (4) It is impossible to accurately control the aspect ratio, pitch, wire diameter, etc. of the metal nanowire. (5) Cannot be applied to flexible boards. In 2009, Dr. Chieh Chang of the United States and Fu Yinkun of Taiwan (DrMichad's toe)

Direct-Write Piezoelectric Pvdf Nanogenerator) The output power of 8.5pw (US patent 19241) is obtained from a single-polyethylene nanofiber using an output voltage of 85 mV on a nano generator. Using the near field (distance less than _ coffee), the metal nanowire is shot on the collecting plate, and the line spacing, thickness, and light transmittance are controlled, thereby increasing the flexibility. SUMMARY OF THE INVENTION The object of the present invention is to use electrospinning as a new process to produce a high performance, low cost, high 201226644 ductility metal nanowire transparent electrode. (1) Dissolve the metal surface plus the surface (4) 丨 in (4) towel (for example: copper sulfate plus surfactant plus polyethylene glycol (PEO) dissolved in water). (2) The electrospinning technique is used to control the pitch and wire diameter of the metal nanowires and to shoot on a set of plates; the electrospinning conditions can be adjusted so that the diameter of the metal nanowires is about (10) 9 ◦. (10). (3) The metal polymer fiber is woven in air (for example: copper nano _ 5 (8) degree calcined for two hours) to remove the polymer (the copper nanowire turns into a dark brown copper oxide nanowire (4) to the metal nanowire Place hydrogen gas to anneal to produce a reduction reaction (for example, steel is annealed for 1 hour to reduce it to red). (5) Test its electrical properties and flexibility. [Embodiment] = Refer to Figure 7, Figure 7 to Figure 7. For the near field electrospinning process of the present invention, the U is provided with a kind of metal Nylon Q2 from the external high voltage source needle 〇1 to achieve better performance than the conventional ITO. The board shows that this will Needle G3 plus - high voltage power supply (10); set (four) move + station 05, the distance between the needle and the set plate is near field (10) face (10)). ^ As shown in Figure 2, _ shifting station G5 and edge power (10), control = distance and wire diameter, electrospinning provides a flexible way to align the = non-line array; repeat its steps, stacking metal nano-array, As shown in Figure 6. The metal formation is not. Due to the unique formation process of the metal nanowire, the m-fiber and the metal nano-^==interface' verify that the two-metal nanowires are indeed fused, effectively reducing the electrical resistance.咫, not early as shown in Figure 3 201226644 As shown in Figure 4, is a simple flow chart of the electrospinning process. As shown in Fig. 5, the metal nanowire array attached to the surface of the slab is light transmissive, and the electrospinning technology can mass produce excellent transparent electrodes. In general, 2〇〇Ω/ιη2, the light transmittance can reach 96%, · 50Ω/πι2, the light transmittance can reach 9〇%; ί2Ω/π]2, the light transmittance can reach 8(10). As shown in Fig. 7, the finished transparent electrode crucible 8 is applied to a solar panel (SdarceUs). The second figure is not, the finished transparent electrode is applied to Qingqing Ruanru

Display/Light Emitting Di〇des). According to the experimental results, the invention knows that the whole phoenix is too large, and the continuous line is extended to cover the entire surface, and the j-line can be extended very long, and the metal nanowire can be produced through the static electricity to reach the high _ high in the processing 'Development_ breakthrough point about 100% of the aspect ratio.) ^ See ratio (for example: copper nanowire can be up to lcm diameter

Brief description of the diagram] The symbol of the electrospinning process diagram of my invention is illustrated by the symbol 〇1 set plate 03 needle 02 metal nanowire 04 droplet 05 mobile platform 07 metal Μ 0 09 ΙΤ 0 06 high voltage source (DC, AC) 08 transparent electrode

10 P'CIGS 11 Red Fluorescent Powder 12 Green Fluorescent Powder 201226644 14 Glass Plate 13 Blue Fluorescent Powder 15 Liquid Crystal

Claims (1)

201226644 VII. Patent application scope: 1. An electrospinning process, the electrospinning process comprises the following steps: Providing a set plate on a mobile platform, the distance between the needle and the plate is near field (5〇〇~1 〇〇〇um); First, the metal salt plus surfactant is dissolved in a solvent (for example: copper sulfate plus surfactant plus polyethylene glycol (10)) dissolved in water). The mixed solvent is placed in the syringe and is applied to the needle - the high-voltage power supply miscellaneous metal nematode wire diameter, and a continuous injection of squirrel (syringepump) is used to shoot the metal nanowire on the collecting plate, and the mobile platform is used to control the metal. The spacing of the nanowires; the metal polymer fibers on the collecting plate are calcined in the air to remove the polymer, and the metal nanowires are placed in a hydrogen gas to be annealed to produce a reduction reaction. 2. The electrospinning process as described in the patent application, wherein the near-field electrospinning system is a foreign-powered power needle, placed on a mobile platform, with a spacing of 5 〇 (M coffee) (10) A technique for controlling the pitch of the metal nanowire array and its wire diameter in this range. 3. As described in the patent application, the metal nanowire available for the near field electrospinning includes Gold (Au), copper (Cu), platinum (Pt), silver (Ag). 4·If the paste is just (four), _ (four) (e Subs her) 'available materials, __), gather Methyl methacrylate (PMMA), polyethylene (PE), and the like. 5. If you apply for the exclusive side of the first purchase (four) board riding (T嶋嶋面) 201226644 6 · If you apply for a patent 丨 _ _ the electric object! , set board with guide (-due age y) 7. If you apply for the patent (fan) 2 electric (four), the board on the album _ can be arranged 8 · as claimed in the second paragraph of the patent application In the spinning process, the array of nanowires on the stack can be stacked. The same 9. As in the electrospinning process described in the first paragraph of the patent application, there is no mask (kless) process, and the substrate can have different light transmittance and conductivity.