TW201225208A - Substrate bearing apparatus and substrate processing device using same - Google Patents

Substrate bearing apparatus and substrate processing device using same Download PDF

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Publication number
TW201225208A
TW201225208A TW100145933A TW100145933A TW201225208A TW 201225208 A TW201225208 A TW 201225208A TW 100145933 A TW100145933 A TW 100145933A TW 100145933 A TW100145933 A TW 100145933A TW 201225208 A TW201225208 A TW 201225208A
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Taiwan
Prior art keywords
substrate
tray
carrying device
groove
loading
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TW100145933A
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Chinese (zh)
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TWI484587B (en
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Ya-Wei Xu
xiu-chuan Zhang
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Beijing Nmc Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Disclosed is a substrate bearing apparatus for bearing substrates, comprising at least one tray (71, 72, 73), wherein each tray (71, 72, 73) has two opposite tray surfaces for bearing substrates. Compared with current common substrate bearing apparatus of the same size, the substrate bearing apparatus can bear more substrate during processes, thus effectively increasing device production capacity and process gas utilization rate. Also disclosed is a substrate processing device using the substrate bearing apparatus.

Description

201225208 六、發明說明: 【發明所屬之技術領域】 本發明涉及微電子生産技術領域,尤指一種基片承載裝 置及應用該基片承載裝置的基片處理設備。 【先前技術】 在微電子産品製造領域中,採用金屬有機化合物化學 氣相沉積(Metal OrganicChemical Vapor Deposition,以下 簡稱MOCVD )設備製備薄膜的工作原理是或瓜族金屬 有機化合物與IV或V族元素的氫化物相混合後通入反應腔 室,混合氣體流經加熱的基片表面時,在基片表面發生熱 分解反應,並晶膜生長成化合物單晶薄膜。現有技術中, 上述MOCVD設備普遍存在單台設備産能較低的問題。據 此’爲了提高MOCVD設備的單台設備産能,一般在製程腔 室内採用具有大尺寸托盤的基片承載裝置,藉以能夠一次 性承載更多的基片並同時進行製程加工。 圖1爲一種常用的應用在M0CVD製程腔室中的基片承 載裝置的結構示意圖。請參閱圖丨,該基片承載裝置包括大 托盤1和疊置於大托盤i上的多個小托盤2,其中,多個小 托盤2沿大托盤i的周圍均勻分佈,且在每個小托盤2上 水平放置有多個基片。在製程進行的過程中,大托盤i繞 其中心軸旋轉,小托盤2在隨大托盤i公轉的同時發生自 轉,藉以使各個小托盤2上的多個基片隨之同步旋轉。進 -步的’在製程腔室内靠近中央位置處設有中央供氣系統 (圖未示)’其沿大托盤i的徑向方向均勻供氣;進入製 程腔至中的製程氣體在通過基片表面時將發生反應並在基 3 201225208 片表面沈積以形成所需的晶膜生長臈層。 上述MOCVD設備利用大托盤和小托盤的行星式旋轉 可有效提升均勻性,並在一定程度上提高腔室内部的有效 製程空間’藉以提高産能。但是,上述基片承載裝置不可 避免地存在下述缺點: 首先,在上述基片承載裝置結構的基礎上,若要進一 步增大單台設備産能,只能通過增大上述大托盤尺寸的方 式而使其承載更多的基片來實現。但是,對於由石墨材質 製成的托盤而言,要使其尺寸在現有基礎上進一步增大, 必將導致托盤加工難度及加工成本的急劇增加,進而造成 >x備成本及運行成本隨之增加。 其次,在製程進行的過程中,製程氣體由製程腔室的 供氣系統進入製程腔室内並充滿整個腔室空間,藉以在基 片表面形成所需膜層。然而由於現有的托盤結構僅能在其 一面承載基片,因此,流經托盤另一面的製程氣體被作爲 廢氣而直接排出製程腔室,進而導致製程氣體的嚴重浪 費,而製程氣體的利用率低,則提高了設備的生產運行成 本〇 【發明内容】 ^爲解決上述問題,本發明提供一種基片承載裝置,其 句在保生産.良率的同時,有效提高單台MOCVD設備的 産忐及製程氣體的利用率。 爲解決上述問題,本發明還提供一種基片處理設備, 其在保證生连良:右 早的同時,可有效提高産能及製程氣體的 利用率。201225208 VI. Description of the Invention: [Technical Field] The present invention relates to the field of microelectronics production technology, and more particularly to a substrate carrying device and a substrate processing apparatus using the substrate carrying device. [Prior Art] In the field of microelectronics manufacturing, the working principle of preparing a film by using a metal organic compound chemical vapor deposition (MOCVD) device is or a metal organic compound of a cucurbit or a group IV or V element. After the hydride phase is mixed, it is introduced into the reaction chamber, and when the mixed gas flows through the surface of the heated substrate, thermal decomposition reaction occurs on the surface of the substrate, and the crystal film is grown into a compound single crystal film. In the prior art, the above-mentioned MOCVD equipment generally has a problem that the productivity of a single device is low. According to this, in order to increase the capacity of a single device of the MOCVD apparatus, a substrate carrying device having a large-sized tray is generally used in the process chamber, so that more substrates can be carried at one time and process processing can be performed at the same time. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view showing the structure of a conventional substrate carrier device used in a M0CVD process chamber. Referring to the drawing, the substrate carrying device comprises a large tray 1 and a plurality of small trays 2 stacked on the large tray i, wherein the plurality of small trays 2 are evenly distributed along the circumference of the large tray i, and at each small A plurality of substrates are horizontally placed on the tray 2. During the course of the process, the large tray i rotates about its central axis, and the small tray 2 rotates while revolving with the large tray i, so that the plurality of substrates on the respective small trays 2 rotate synchronously. The step-by-step is provided with a central air supply system (not shown) near the central position in the process chamber. It is uniformly supplied in the radial direction of the large tray i; the process gas entering the process chamber is passing through the substrate. The surface will react and deposit on the surface of the base 3 201225208 to form the desired film growth layer. The MOCVD apparatus described above utilizes planetary rotation of large trays and small trays to effectively improve uniformity and, to some extent, increase the effective process space inside the chamber to increase productivity. However, the above-mentioned substrate carrying device inevitably has the following disadvantages: First, on the basis of the structure of the above-mentioned substrate carrying device, if the capacity of a single device is to be further increased, only by increasing the size of the large tray described above. It is implemented by carrying more substrates. However, for a tray made of graphite, the size of the tray is further increased on the existing basis, which will inevitably lead to a sharp increase in the difficulty of processing the pallet and the processing cost, thereby causing the cost of the > increase. Secondly, during the process, the process gas enters the process chamber from the gas supply system of the process chamber and fills the entire chamber space, thereby forming a desired film layer on the surface of the substrate. However, since the existing tray structure can only carry the substrate on one side thereof, the process gas flowing through the other side of the tray is directly discharged as exhaust gas to the process chamber, thereby causing serious waste of process gas and low utilization rate of the process gas. In order to solve the above problems, the present invention provides a substrate carrying device which can effectively improve the production of a single MOCVD device while maintaining production and yield. Process gas utilization. In order to solve the above problems, the present invention also provides a substrate processing apparatus which can effectively improve the utilization rate of the production capacity and the process gas while ensuring the raw connection: right early.

S 201225208 據此,本發明提供一種基片承載裝置,其係用於承载 基片,其係包括至少一個托盤,該托盤具有兩個相反的用 於承載基片的盤面。 其中,該盤面上設置有多個用於放置基片的裝片位。 其中,該裝片位係為與基片形狀相符合的凹槽、凸台 或與盤面相平齊的平面。 其中,該托盤以靜電吸附的方式將基片固定在装片位 上。 其中,在凹槽與盤面相交的邊緣處設置有凸爪和/或凸 緣,藉由所述之凸爪和/或凸緣而將基片固定在凹槽中。 其中,該托盤包括可分離地貼合在一起的第一托盤和 第二托盤,在第一托盤和/或第二托盤的貼合面上設置有一 與凹槽連通的裝片通道;在裝/卸基片時,通過該裝片通道 而將基片放入凹槽中或從凹槽中取出。 其中,在托盤上與盤面相鄰的側面設置有一與凹槽相 連通的裝片通道,在裝’卸基片時’通過該裝片通道而將基 片放入凹槽中或從凹槽中取出。 其中’所述凸爪和/或凸緣分布於凹槽的部分邊緣處, 凹槽的未被凸爪和/或凸緣覆蓋的區域面積足以使基片通 =在裝/卸基片肖’使基片通過凹槽中未被凸爪和/或凸緣 f盖的區域進人凹槽内部,然後將基片移動至凸爪和/或凸 緣所在位置處,以蕪ώ Λ 』 藉由凸爪和/或凸緣將基片固定於凹槽 内。其中’凸緣爲半圓環狀。 I、中所述托盤還包括支樓片,支可分離地貼合 上並且在支撐片上設置有與凹槽相對應的通孔, 201225208 該通孔的至少部分邊緣將基片固定在凹槽内β 其中,位於同一托盤的兩個盤面上的裝片位係對稱或 錯位設置。 其中,基片承載裝置包括至少兩個相互間隔疊置的托 盤,相鄰托盤上的裝片位係相對或錯位設置。 其中,基片承載裝置還包括旋轉連接機構,用以將各 個托盤間隔地連接在一起,藉以驅動各個托盤進行同步或 獨立地旋轉運動。 其中,所述托盤的材料包括石墨、鉬或鉬合金。 其中,所述托盤係由石墨材料製成,並且基片承載裝 置表面係具有SiC塗層。 其中,基片承載裝置可承載的基片材料包括藍寶石、Accordingly, the present invention provides a substrate carrying device for carrying a substrate comprising at least one tray having two opposite disk faces for carrying the substrate. Wherein, a plurality of loading positions for placing the substrate are disposed on the disk surface. Wherein, the loading position is a groove, a boss or a plane flush with the disk surface in conformity with the shape of the substrate. Wherein the tray electrostatically adsorbs the substrate to the loading position. Wherein, at the edge where the groove intersects the disk surface, a claw and/or a flange is provided, and the substrate is fixed in the groove by the claw and/or the flange. Wherein the tray comprises a first tray and a second tray detachably attached together, and a mounting channel communicating with the groove is disposed on the bonding surface of the first tray and/or the second tray; When the substrate is unloaded, the substrate is placed in or removed from the recess through the loading channel. Wherein, a side of the tray adjacent to the disk surface is provided with a loading channel communicating with the groove, and when the substrate is unloaded, the substrate is placed in the groove or from the groove through the loading channel. take out. Wherein the 'the claws and/or the flanges are distributed at a portion of the edge of the groove, and the area of the groove that is not covered by the claws and/or the flange is sufficient for the substrate to pass through = in the loading/unloading substrate Passing the substrate into the recess through the area of the recess that is not covered by the tabs and/or the flange f, and then moving the substrate to the position where the tabs and/or the flange are located, by means of 芜ώ The tabs and/or flanges secure the substrate within the recess. Wherein the 'flange is semi-annular. The tray further includes a branch piece, the branch is detachably attached, and a through hole corresponding to the groove is disposed on the support piece, and at least part of the edge of the through hole fixes the substrate in the groove β Among them, the loading positions on the two discs of the same tray are symmetric or misaligned. Wherein the substrate carrying device comprises at least two trays which are spaced apart from each other, and the loading positions on the adjacent trays are opposite or offset. Wherein the substrate carrying device further comprises a rotary joint mechanism for spacing the trays together to drive the respective trays for synchronous or independent rotational movement. Wherein, the material of the tray comprises graphite, molybdenum or molybdenum alloy. Wherein the tray is made of a graphite material and the surface of the substrate carrying device has a SiC coating. Wherein, the substrate material that the substrate carrying device can carry includes sapphire,

Ge、GaAs、GaN、SiC 或 Si。 此外,本發明還提供一種基片處理設備,包括製程腔 至,在製程腔室内設置有上述本發明所提供的基片承載裝 置’用以在製程過程中承載基片。 本發明具有下述優點: 本發明提供的基片承載裝置包括至少一個托盤,並且 該托盤具有兩個相反的用於承載基片的盤面。因此,本發 明提供的基片承載裝置與現有的同等尺寸的基片承載裝置 相:匕’藉由上述至少一個托盤、以及各個托盤上的兩個盤 月b夠承載更夕的基片,進而能夠有效提高製程設備的産 能。而且’由於應用本發明提供的基片承載裝置在增大設 備產能的同時無需增加基片承載裝置的尺寸,因此,在t €過&中有利於對製程設備中的氣流場及溫度場進行有效Ge, GaAs, GaN, SiC or Si. Further, the present invention provides a substrate processing apparatus including a process chamber to which the above-described substrate carrying device provided by the present invention is disposed to carry a substrate during the process. The present invention has the following advantages: The substrate carrying device provided by the present invention comprises at least one tray, and the tray has two opposite disk faces for carrying the substrate. Therefore, the substrate carrying device provided by the present invention is compatible with the existing substrate carrying device of the same size: the above substrate is supported by the at least one tray and the two wires b on each tray. Can effectively increase the production capacity of process equipment. Moreover, since the substrate carrying device provided by the application of the present invention does not need to increase the size of the substrate carrying device while increasing the capacity of the device, it is advantageous to carry out the airflow field and the temperature field in the process equipment in the t' effective

6 S 201225208 控制,藉以保證了製程結果的穩定性及均勻性。並且,在 利用本發明提供的基片承載裝置進行實際製程時,製程氣 體可同時與位於托盤的兩個盤面上的基片發生反應,並在 基片表面形成所需膜層,藉以在增大設備産能的同時能夠 有效提高製程氣體的利用率,進而降低設備的生産運行成 本。 本發明提供的基片處理設備包括製程腔室,並且在該 製程腔室内部設置有上述本發明提供的基片承載裝置,用 以在製程過程中承載基片。因此,本發明提供的基片處理 設備在保證製程穩定性及均勻性的同時,能夠一次性承載 更多的基片同時進行製程,不但具有較高的産能,而且還 可有效k尚製程.氣體的利用率,進而降低生産成本。 【實施方式】 爲使本領域的通常知識者更好地理解本發明的技術方 案,下面結合附圖對本發明提供的基片承載裝置及應用該 基片承載裝置的基片處理設備進行詳細描述。 爲了便於描述,在下述各個實施例中均是將基片裝載 裝置的托盤水平放置作爲基準面,托盤的上盤面和下盤面 分別是指當基片裝載裴置的托盤水平放置時托盤向上的面 和托盤向下的面。 請參閱圖2,爲本發明提供的基片承載裝置的結構示意 圖。該基片承載裝置包括一個托盤3〇,該托盤3〇具有兩個 相反的盤面’分別爲上盤面31〇和下盤面32〇,並且在上盤 面310和下盤面320上分別設有多個可用於放置基片的裝 片位311、32ι,所述之裝片位311、321係為與基片形狀相 201225208 符合的凹槽。也就是說’托盤30具有可用於承載基片的雙 面盤面’精以托盤30與現有的同等尺寸的托盤相比,能夠 一次性承載更多的基片。因此,該基片承載裝置具有更強 的:載能力,將其應用於製程設備中時,能夠有效提高製 程设備的産能。 此外’基^載裝置還可以包括__個以上的托盤3〇, 並且-個以上的托盤3G均具有兩個相反的用於承載基片的 盤面,以進一步提高基片承載裝置的承載能力,進而提高 了製程設備的產能。 據此’上述裝片位311、321具體的係爲設置在上盤面 和下盤面320上且與基片形狀相符合的凹槽。需要浐出 ^处在實際應用中,上述裝片位3u、32i也可以設置爲 其他、構’例如,還可〇 3 還*1以疋凸出於上述盤面且與基片形狀 相符合的凸台,或者信禮Β 士 疋在盤面上劃分出且用於放置基 片的特定的平面位置而非為凹槽或凸台。 針對基片承載裝置水平放置在製程腔室中時,托盤的 上、下盤面的位置不同的蛀 π的特點,托盤的上、下盤面可以採 斜:二基片承載方式。下面分別就托盤上盤面與下盤面 ;土 @承載方式所採取的技術方案進行詳細說明。 首先,請依次參閱圖3Α至圖3C,分別爲本發明提供 的托,的上盤面所採取的.承載基片的三種具體方案。 叫參閱圖3A’爲本發明提供的托盤中的上盤面所採用 的第一種基片承載方式的結構示意圖。本方案中,托盤41 的上盤面410上的裝片位具體爲與上盤面410相平齊的平 也就疋說,該裝片位僅爲在上盤面410上所指定的多 201225208 個專門用㈣置基片8G的區域,而非為凹槽Μ” 於基片承載裝置被水平放置在製程利 去丄μ· m 至鬥利用基片80的 重力作用即可實現與基片承載裝置之間的定位,進一步 ;雷還可以爲基片承載裝置施加-定的直流偏邀,藉以以 靜電吸附的方式而將基片8〇固定在各自的裝片位上。 請參閱圖3B,爲本發明提供的托盤中^上盤面所採用 的第二種基片承載方式的結構示意圖。本方案中,托盤Μ 的上盤面420的裝片位421係爲與基片8〇的形狀相符合的 凹槽,基片80被置於該凹槽中’藉以利用凹槽的侧壁而實 現對基片80#定位。本方案中所示的凹槽深度大於基片 的厚度而使基片8G的上表面低於上盤面42()。在實際 中’該凹槽的深度還可以小於基片的厚度,藉以使基片上 表面高於上盤面;進一步的,還可以使凹槽的深度與基片 的厚度大致相等,藉以使基片上表面與上盤面相平齊。 請參閱圖3C,爲本發明提供的托盤中的上盤面所採用 的第三種基片承載方式的結構示意圖。本方案中,托盤43 的上盤面430的裝片位431係爲一種凸出於上盤面43〇且 與基片80的形狀相符合的凸台,基片8〇被置於該凸台的 上表面上,並利用基片8〇自身重力或利用施加在托盤43 上的直流偏壓而將基片8〇固定於裝片位43 1上。 需要指出的是,在實際應用中,還可以在同一個托盤 的上盤面上同時應用上述圖3A至3C所示的三種或其中任 思兩種結構的裝片位,只要其能夠穩固可靠地將基片固定 於裝片位上。 還需要指出的是,上述圖3A至3C所示的上盤面承載 201225208 基片的方式僅僅是作爲部分實施例而用以示範性地說明本 發明提供的基片承載裝置的結構;但本發明並不局限於 此,其他基於本發明的原理而進行的變形和改進同樣應視 爲本發明的保護範圍。 請依次參閱圖4A i 4E’分別爲本發明提供的托盤的 下盤面所採取的承載基片的五種具體方案。具體而言,這 五種具體方案中的下盤面均採用係為凹槽的裝片位來固定 土片並藉由在凹槽與下盤面相交的邊緣處所設置的凸爪 和/或凸緣而將基片固宗^ , 乃U疋在裝片位中;區別在於裝/卸基片的 方式有所不同’具體說明請分別參閱下述描述。 请參閱圖4A ’爲本發明所提供的托盤的下盤面所採用 的第種基片承載方式的結構示意圖。本方案中,托盤Η 進一步包括第-托盤511和第二托盤512,二者之間係以可 分離的方式緊密地貼合在一起而構成完整的托盤Η。其 中,托盤51的下盤面521即爲第二托盤512的下表面,且 下盤面521上的多個裝片们23均係爲一凹槽,在凹槽與 下盤面521相交的邊緣處設置有凸緣524,基片8〇被置於 凸緣524的至少部分邊緣上,藉以將基片固定於下盤面m 上的裝片位523内。此外,在第二托盤512與第一托盤511 相貼合的貼合面522上具有與裝片& 523連通的裝片通 道’本方案中使凹槽在第二托盤512的厚度方向上貫通該 第一托盤512’藉以形成上述的裝片通道。上述基片承載裝 置結構通過該裝片通道進行裝/却基片的過程如下,先將第 -托盤511和第二托盤5 12相互分離,藉由機械手或人工 將基片80從凹槽中取出或放入凹槽内,然後將第一托盤5"6 S 201225208 Control to ensure the stability and uniformity of the process results. Moreover, in the actual process using the substrate carrying device provided by the present invention, the process gas can simultaneously react with the substrate on the two disk surfaces of the tray, and form a desired film layer on the surface of the substrate, thereby increasing At the same time, the equipment capacity can effectively improve the utilization rate of the process gas, thereby reducing the production and operation cost of the equipment. The substrate processing apparatus provided by the present invention includes a process chamber, and the substrate carrying device of the present invention described above is disposed inside the process chamber for carrying the substrate during the process. Therefore, the substrate processing apparatus provided by the invention can carry more substrates at the same time and process simultaneously while ensuring process stability and uniformity, not only has high productivity, but also can effectively process the gas. Utilization, which in turn reduces production costs. [Embodiment] In order to enable a person skilled in the art to better understand the technical scheme of the present invention, a substrate carrying device and a substrate processing apparatus using the same according to the present invention will be described in detail below with reference to the accompanying drawings. For convenience of description, in each of the following embodiments, the tray of the substrate loading device is horizontally placed as a reference surface, and the upper and lower surface of the tray respectively refer to the upward facing surface of the tray when the tray on which the substrate is loaded is placed horizontally. And the side of the tray down. Please refer to FIG. 2, which is a schematic structural view of a substrate carrying device provided by the present invention. The substrate carrying device comprises a tray 3〇 having two opposite disk faces 'upper disk surface 31〇 and lower disk surface 32〇, respectively, and a plurality of available on the upper disk surface 310 and the lower disk surface 320 respectively The mounting positions 311, 321 of the substrate are placed in a groove conforming to the shape of the substrate 201225208. That is to say, the tray 30 has a double-faced disk surface that can be used to carry the substrate. The tray 30 can carry more substrates at a time than the conventional equivalent-sized tray. Therefore, the substrate carrying device has a stronger load capacity, and when it is applied to a process equipment, the productivity of the process equipment can be effectively improved. In addition, the carrier device may further include more than one tray 3〇, and more than one tray 3G has two opposite disk surfaces for carrying the substrate to further improve the carrying capacity of the substrate carrying device. This further increases the production capacity of the process equipment. Accordingly, the above-mentioned loading positions 311, 321 are specifically grooves provided on the upper and lower disk faces 320 and conforming to the shape of the substrate. In the actual application, the above-mentioned loading positions 3u, 32i can also be set to other structures, for example, 〇3 and *1, so that the convex surface protrudes from the disk surface and conforms to the shape of the substrate. A table, or a special plane position that is divided on the surface of the disk and used to place the substrate instead of being a groove or a boss. When the substrate carrying device is horizontally placed in the processing chamber, the position of the upper and lower discs of the tray is different, and the upper and lower discs of the tray can be inclined: two substrates are supported. The following is a detailed description of the technical solutions adopted on the tray surface and the lower surface of the tray; First, please refer to FIG. 3A to FIG. 3C in sequence, which respectively provide three specific schemes for carrying the substrate taken by the upper surface of the tray provided by the present invention. Referring to Fig. 3A', a schematic structural view of a first type of substrate carrying mode used in the upper surface of the tray provided by the present invention is shown. In this solution, the loading position on the upper surface 410 of the tray 41 is specifically flush with the upper surface 410. In other words, the loading position is only 201225208 dedicated for the specified number on the upper surface 410. (4) arranging the area of the substrate 8G instead of the groove Μ" between the substrate carrying device and the substrate carrying device being horizontally placed in the process to remove the force from the 丄μ·m to the hopper using the substrate 80 Positioning, further; Ray can also apply a predetermined DC bias to the substrate carrying device, thereby fixing the substrate 8〇 to the respective loading positions by electrostatic adsorption. Please refer to FIG. 3B, which is the present invention. The structure of the second substrate carrying mode used in the upper tray surface of the tray is provided. In the present embodiment, the loading position 421 of the upper tray surface 420 of the tray 系 is a groove corresponding to the shape of the substrate 8〇. The substrate 80 is placed in the recesses to thereby position the substrate 80# by utilizing the sidewalls of the recesses. The recess depth shown in this embodiment is greater than the thickness of the substrate to the upper surface of the substrate 8G. Lower than the upper surface 42 (). In practice, the depth of the groove can also be less than the base The thickness of the substrate is such that the upper surface of the substrate is higher than the upper surface; further, the depth of the recess can be made substantially equal to the thickness of the substrate, so that the upper surface of the substrate is flush with the upper surface. Referring to FIG. 3C, The structure of the third substrate carrying mode used in the upper disk surface of the tray provided by the invention. In the present embodiment, the loading position 431 of the upper disk surface 430 of the tray 43 is a kind of protruding from the upper disk surface 43〇 and the base The shape of the sheet 80 conforms to the boss, the substrate 8 is placed on the upper surface of the boss, and the substrate 8 is folded by the weight of the substrate 8 or by the DC bias applied to the tray 43. It is fixed on the loading position 43 1. It should be noted that, in practical applications, it is also possible to simultaneously apply the three types of the above-mentioned three or two of the structures shown in Figs. 3A to 3C on the upper surface of the same tray. The position is as long as it can firmly and reliably fix the substrate to the loading position. It should also be noted that the manner in which the upper disk surface shown in FIGS. 3A to 3C carries the 201225208 substrate is merely exemplary for use as a part of the embodiment. Illustratively described The structure of the substrate carrying device is provided; however, the invention is not limited thereto, and other modifications and improvements based on the principles of the present invention are also considered to be the scope of protection of the present invention. Please refer to FIG. 4A for details. The present invention provides five specific solutions for carrying the substrate on the lower surface of the tray. Specifically, the lower surface of the five specific solutions adopts a grooved loading position to fix the soil sheet and The claws and/or flanges are provided at the edges of the groove intersecting the lower disk surface to fix the substrate, which is in the loading position; the difference is that the manner of loading/unloading the substrate is different. Please refer to the following description for the description. Please refer to FIG. 4A ' is a schematic structural view of the first substrate carrying mode adopted for the lower surface of the tray provided by the present invention. In the present solution, the tray Η further includes a first tray 511 and a second tray 512 which are closely attached together in a detachable manner to constitute a complete tray stack. The lower surface 521 of the tray 51 is the lower surface of the second tray 512, and the plurality of the mounting sheets 23 on the lower surface 521 are each a groove, and the edge of the groove intersecting the lower surface 521 is provided at the edge. A flange 524, the substrate 8 is placed over at least a portion of the edge of the flange 524 to secure the substrate to the loading position 523 on the lower surface m. Further, the bonding surface 522 on which the second tray 512 and the first tray 511 are attached has a loading passage communicating with the loading sheet amp 523. In the present embodiment, the groove is penetrated in the thickness direction of the second tray 512. The first tray 512' is thereby formed to form the above-described loading channel. The process of mounting the substrate on the substrate carrying device through the loading channel is as follows. First, the first tray 511 and the second tray 5 12 are separated from each other, and the substrate 80 is manually removed from the groove by a robot or a hand. Remove or place in the groove, then place the first tray 5"

10 S 201225208 和第二托盤512重新貼合即可。對於上述第一托盤511和 第一托盤5 12之間的可分離的連接方式,可以採用例如但 不限於螺栓連接或者卡套及卡具連接等方式而實現。 請參閱圖4Β和4C,分別爲本發明提供的托盤中的下 盤面所採用的第二和第三種基片承載方式的結構示意圖。 這兩種方案均是在上述圖4八所示方案的基礎上對裝片通道 所進行的變形和改進。 具體而言,圖4Β所示方案爲,托盤52同樣由第一托 盤5 1 1和第二托盤5丨2貼合而成,與圖4 Α所示方案的區別 在於在第一托盤512中設置有一個可被所有的裝片位523 共用的裝片通道525。此外,本方案中托盤52的各部分結 構均與圖4A所示結構類似,並且具有同樣的裝/卸基片過 程。而本方案相對於圖4A所示結構的托盤而言,其優點在 於’可實現對所有裝片位523中的基片8〇同時進行製/卸操 作,進而在一定程度上提高基片的裝/卸效率。 圖4C所示方案爲,裝片通道525設置在托盤53的鱼 盤面相鄰的側面上;在裝/却基片時,可藉由機械手或人工 通過該裝片通冑525而將基片8〇放入係爲凹槽的裝片位 523中或將基片80從該凹槽中取出。進一步的,也可以不 設置凹槽作為裝片位523,並將該裝片料525言免置在靠近 下盤面521的位置處,藉以直接職該裝片通道⑵的一部 分作爲裝片位523使用。此外,較佳的,在裝片通道⑵ 的入口處設置擋板或擋塊,以防止製程4體進 道525内部。 扳片通 需要指出的是,對於托盤裝片通道的設置位置及結 201225208 構’並不局限於上述圖4A至圖4C中所示的方案,本領域 通常知識者可以在此基礎上做出多種變形和改進,而凡是 基於本發明的原理及實質所做出的變形及改進均應視爲爲 本發明的保護範圍。 請參閱4D,爲本發明提供的托盤中的下盤面所採用的 第四種基片承載方式的結構示意圖。托盤54的下盤面521 上的裝片位523係爲一種長圓形或橢圓形的凹槽,並且, 在該凹槽一端且與下盤面521相交的邊緣處設置一個半圓 環狀的凸緣524。在裝/卸基片80時,可以藉由機械手將基 片托起並經由凹槽未設置凸緣524的一端進入凹槽内部, 然後移動至具有凸緣524的一端’藉由該半圓環狀的凸緣 524將基片80固定於裝片位523中。可以理解的是,在實 際應用中,上述作爲裝片位523的凹槽的形狀以及凸緣524 的形狀均可産生多種變形和改進,而只要將凸緣524僅設 置於係為凹槽的裝片位523與下盤面521相交的部分邊緣 處,而且凹槽的未被凸緣524覆蓋的區域面積足以使基片 80順利地通過並進入裝片位523内部即爲本發明的保護範 圍。這種方案的優點在於,能夠提高裝/卸基片的自動化程 度,也就是說,裝/卸基片的過程可完全依靠機械手完成, 藉以提高基片的裝/卸效率;另外,由兮本方案中用於支撐 基片的凸緣面積較小,因而可在一定程度上增加基片的表 面利用率》 請參閱4E,爲本發明提供的托盤的下盤面所採用的 第五種基片承載方式的結構示意圖。本方案中,在托盤Η 的下盤面上設置有一個與下盤面形狀相符合的支撐片10 S 201225208 and the second tray 512 can be reattached. The detachable connection between the first tray 511 and the first tray 512 can be realized by, for example, but not limited to, bolting or ferrule and fixture connection. Referring to Figures 4A and 4C, respectively, are schematic structural views of the second and third substrate carrying modes employed in the lower surface of the tray provided by the present invention. Both of these solutions are variants and improvements to the loading channel based on the solution shown in Figure 4-8 above. Specifically, the solution shown in FIG. 4A is that the tray 52 is also formed by the first tray 5 1 1 and the second tray 5丨2, which is different from the scheme shown in FIG. 4A in that the first tray 512 is disposed. There is a loading channel 525 that can be shared by all of the loading stations 523. Further, the structure of each portion of the tray 52 in this embodiment is similar to that shown in Fig. 4A, and has the same loading/unloading substrate process. The advantage of the present solution relative to the tray of the structure shown in FIG. 4A is that the substrate 8 can be simultaneously mounted/unloaded in all the loading positions 523, thereby improving the mounting of the substrate to some extent. / Unloading efficiency. 4C, the loading channel 525 is disposed on the adjacent side of the fish plate surface of the tray 53; when the substrate is mounted, the substrate can be passed by the robot or manually through the loading port 525 8〇 is placed in the loading position 523 which is a groove or the substrate 80 is taken out of the groove. Further, the groove may not be provided as the loading position 523, and the loading material 525 is not disposed at a position close to the lower disk surface 521, so that a part of the loading channel (2) is directly used as the loading position 523. . Further, preferably, a baffle or a stopper is provided at the entrance of the loading passage (2) to prevent the inside of the process 4 body inlet 525. It should be noted that the position and the knot of the tray loading channel are not limited to the solutions shown in the above-mentioned FIG. 4A to FIG. 4C, and those skilled in the art can make various kinds on this basis. Modifications and improvements, and variations and modifications made by the principles and spirit of the invention are considered to be the scope of the invention. Please refer to 4D, which is a structural schematic diagram of the fourth substrate carrying mode adopted for the lower surface of the tray provided by the present invention. The loading position 523 on the lower surface 521 of the tray 54 is an oblong or elliptical groove, and a semi-annular flange 524 is provided at the end of the groove and intersecting the lower surface 521. . When the substrate 80 is loaded/unloaded, the substrate can be lifted by a robot and inserted into the inside of the groove via one end of the groove not provided with the flange 524, and then moved to the end having the flange 524' by the half ring The flange 524 secures the substrate 80 in the loading position 523. It can be understood that, in practical applications, the shape of the groove as the loading position 523 and the shape of the flange 524 can be variously modified and improved, as long as the flange 524 is only disposed in the groove. At the edge of the portion where the sheet position 523 intersects the lower surface 521, and the area of the groove not covered by the flange 524 is sufficient to allow the substrate 80 to pass smoothly and enter the inside of the loading position 523 is the protection scope of the present invention. The advantage of this solution is that the degree of automation of loading/unloading the substrate can be improved, that is, the process of loading/unloading the substrate can be completely completed by the robot, thereby improving the loading/unloading efficiency of the substrate; In this solution, the flange area for supporting the substrate is small, so that the surface utilization ratio of the substrate can be increased to some extent. Please refer to 4E, which is the fifth substrate used for the lower surface of the tray provided by the present invention. Schematic diagram of the structure of the bearer mode. In this solution, a support piece corresponding to the shape of the lower plate surface is disposed on the lower surface of the tray Η

12 S 201225208 526,該支撐片526能夠與下盤面分離地拆/裝,具體而言可 以採用螺接或卡接等與圖4A所示方案中類似的連接方式而 將二者結合在一起。在支撐片526上設置有多個與下盤面 上的裝片位523的位置相對應的通孔527,且通孔527的至 少部分邊緣能夠用於穩定地承載基片8〇。在裝載基片8〇 時,可先將該支撐片526與托盤55的下盤面分離,然後將 基片80裝入下盤面的係為凹槽的裝片位523中,再將支撐 片526與托盤55進行貼合連接即可;卸載基片的過程與之 類似。 上述圖4A至圖4E中所示的各方案中,均以凸緣作爲 承載基片的支樓結構,谷易理解的是,當把凸緣改爲其他 形狀時或者改爲幾個獨立的凸爪時,同樣能實現支撐基片 的作用。並且,將凸緣改爲凸爪後還可進一步增大基片的 表面利用率。 請一併參閱圖5A至5C,爲本發明提供的托盤中所採 用的—種凸爪結構,該圖5A至圖5C所示的各圖形均爲裝 片位的輪廓不意圖。如圖所示,以實現對圓形基片的承載 爲例,可以在圓形的裝片位的邊緣處設置複數個凸爪,例 如圖中所不的3個或4個凸爪,並且各個凸爪在裝片位的 周圍可以均勻分佈,也可以不均勻分佈。而且,可以理解 的是,在同一裝片位上還可同時設置凸緣及凸爪,以更好 地承載基片。此外,上述圖4E所示的方案實際上是將位於 裴片位處的凸緣和/或凸爪結構從托盤上分離出來的結構, 因此,圖4E所示的支撐片的通孔形狀同樣可參照上述圖5a 至5C所示的輪廓形狀而設置。 13 201225208 谷易理解的是,上述圖3A至圖5C所示的各種對基片 的承載方案可在托盤的上、下盤面的裝片位中進行互換; 也就疋說,上述圖3A至圖3C所示的以靜電吸附等方式承 載基片的裝片位結構同樣可應用於下盤面上;同樣的,上 述圖4A至圖5C所示的利用凹槽及凸緣和/或凸爪等結構承 載基片的裝片位結構也可應用於上盤面上。本領域通常知 識者可根據實際需要進行靈活操作,此處不再一一贅述。 此外還可以理解的是,對於上述本發明所提供的托盤 中,位於上盤面和下盤面的裝片位的位置關係,可以採取 相互對應的方式設置,也可以採取相互錯位的方式設置。 通常知識者可以根據實際應用中,針對托盤溫度場及腔室 氣流場分佈的具體需要對同一托盤上的裝片位進行不同的 設置。 «•月參閱圖6,爲本發明提供的基片承載裝置一個具體實 施例的結構示意圖。本實施例中,基片承載裝置由三個相 互平行設置的托盤構成,並通過旋轉連接機構74進行連 接並且各牦盤之間具有一定的間隔距離以便於製程氣體 通過。上述旋轉連接機構74可驅動各個托盤進行同步旋轉 運動,也可單獨地驅動各個托盤各自進行運動。當各個托 盤被同步驅動旋轉時,相鄰托盤上的裝片位的位置可以採 取相互對應的方式進行設置,也可以採取相互錯位的方式 進行設置。例如,® 6所示基片承載裝置中,相鄰的托盤 71與托盤72上的裝片位的位置爲相對設置,而托盤72和 托盤73之間的裝片位的位置則採取錯位設置。而且,通常 头識者還可根據需要對同一個托盤上的上、下盤面的裝片 201225208 =的位置進行設置,以滿^製程需I而對於各托盤中的 位承載基片的具體結構可參照上述3Α_ 5C中所 述的方案進行選擇和設置,在此不予贅述。 本發明提供的基片承載裝置中托盤的材料可以包括 但不限於石墨、㈣la合金等耐高溫、且化學性質穩定的 材:’當採用石墨作爲托盤的材料時,較佳的,在托盤表 面叹置一層Sic塗層。此外,本發明所提供的基片承載裝 置可用於承載包括藍寶石、Ge、GaAs、GaN、加或Si等 材料的基片進行相應的薄膜製備製程。 而要扎出的是,上述各附圖及實施例均以圓形的托盤 爲例對本發明提供的基片承載裝置結構加以描述,但本發 明並不局限于此,料知識者可根據實際需要而對各托盤 的形狀進仃變形或改進’並且該變形和改進均應視爲本發 明的保護範圍。並且,本發明所提供的基片承載裝置中的 裝片位的形狀並不局限於圓形,當基片形狀發生變化時, 通常知識者可據此對各個托盤上的裝片位的形狀進行改 變。 還需要指出的是,本發明提供的基片承載裝置還可採 用暨直放置的方式進行製程,具體而t,使基片承載裝置 的旋轉軸爲水平方向,藉以使各個托盤的盤面均處於豎直 的平面内進行旋轉或靜止。 . 綜上所述,本發明提供的基片承載裝置包括至少—個 托盤,並且各托盤的兩個盤面均可用於承載基片進行製 程。因此,本發明所提供的基片承載裝置與目前常用的同 等尺寸的基片承载裝置相比,能夠承載更多的基片進行製 15 201225208 程,進而有效提高設備的産能,同時提高製程氣體的有效 利用率。而且,由於應用本發明提供的基片承載裝置,在 增大設備產能的同時無需增加基片承載裝置的尺寸,因而 有利於製程設備對氣流場及溫度場的穩定性和均勻性實現 有效控制,進而可獲得理想的製程效果。此外,在一個較 佳實施例中,本發明提供的基片承載裝置還具有旋轉連接 機構,可驅動各托盤同步或進行獨立的旋轉運動,藉以有 效提高製程的均勻性。 作爲另一種技術方案,本發明還提供一種基片處理設 備,包括製程腔室,在製程腔室内設置上述本發明所提供 的基片承載裝置’帛以在製程過程中承載基片。在實際應 用t,該基片處理設備可以是但不限於m〇cvd設備。 由於本發明提供的基片處理設備中設置有上述本發明 提供的基片承載裝置。因此,基於類似的理由,該基片處 理設備能夠在保證製程穩定性及均勻性的同時,具有較高 的產能以及較高的製程氣體利用率,進而降低設備及生產 運]于專的成本。 可以理解的I’以±實施方式僅僅{爲了㉟明本發明的 原理而採用的示例性實施方式,然而本發明並不局限於此。 =於本領域内的通常知識者而言’在不脫離本發明的精神和 貫質的情況下,可以做出各種變形和改進,這些變形和改進 也視爲本發明的保護範圍。 【圖式簡單說明】 圖1爲一種常用的M0CVD製程腔室的結構示意圖 201225208 圖2爲本發明提供的基片承載裝置中的托盤的結構示 意圖。 圖3A爲本發明提供的托盤中的上盤面所採用的第一種 基片承載方式的結構示意圖。 圖3B爲本發明提供的托盤中的上盤面所採用的第二種 基片承載方式的結構示意圖。 圖3C爲本發明提供的托盤中的上盤面所採用的第二種 基片承載方式的結構示意圖。 圖4A爲本發明提供的托盤中的下盤面所採用的第一種 基片承載方式的結構示意圖。 圖4B爲本發明提供的托盤中的下盤面所採用的第二種 基片承載方式的結構示意圖。 圖4C爲本發明提供的托盤中的下盤面所採用的第三種 基片承載方式的結構示意圖。 圖4D爲本發明提供的托盤中的下盤面所採用的第四種 基片承載方式的結構示意圖。 圖4E爲本發明提供的托盤中的下盤面所採用的第五種 基片承載方式的結構示意圖。 圖5 A爲本發明提供的托盤中所採用的第一種凸爪結構 示意圖。 圖5B爲本發明提供的托盤中所採用的第二種凸爪結構 示意圖。 圖5C爲本發明提供的托盤中所採用的第三種凸爪結構 示意圖。 圖6爲本發明提供的基片承載裝置一種具體實施方式 17 201225208 的結構示意圖。 【主要元件符號說明】 1大托盤 2小托盤 30托盤 310上盤面 31 1裝片位 320下盤面 321裝片位 41托盤 42托盤 43托盤 410上盤面 420上盤面 421裝片位 430上盤面 431裝片位 51托盤 52托盤 53托盤 54托盤 55托盤 511第一托盤 512第二托盤 521下盤面 522貼合面 523裝片位 524凸緣 525裝片通道 526支撐片 527通孔 71托盤 72托盤 73托盤 74旋轉連接機構 80基片12 S 201225208 526, the support piece 526 can be detached/detached separately from the lower disk surface, and specifically, the two can be combined by screwing or snapping or the like in a similar manner to the solution shown in Fig. 4A. A plurality of through holes 527 corresponding to the positions of the loading positions 523 on the lower disk surface are provided on the support piece 526, and at least a part of the edges of the through holes 527 can be used to stably carry the substrate 8A. When the substrate 8 is loaded, the support sheet 526 can be separated from the lower surface of the tray 55, and then the substrate 80 is loaded into the grooved loading position 523 of the lower surface, and the support sheet 526 is The tray 55 can be attached and attached; the process of unloading the substrate is similar. In each of the above-mentioned embodiments shown in FIGS. 4A to 4E, the flange is used as a branch structure for carrying the substrate, and it is easy to understand that when the flange is changed to other shapes or changed to several independent convexities. When the claws are used, the effect of supporting the substrate can also be achieved. Also, the surface utilization of the substrate can be further increased by changing the flange to the claw. Referring to Figures 5A through 5C, there is shown a claw structure for use in a tray according to the present invention. The figures shown in Figures 5A through 5C are not intended to be contoured. As shown in the figure, in order to realize the bearing of the circular substrate, a plurality of claws may be arranged at the edge of the circular loading position, for example, three or four claws in the figure, and each The claws may be evenly distributed around the loading position or may be unevenly distributed. Moreover, it will be appreciated that flanges and tabs may be provided at the same loading position to better carry the substrate. In addition, the above-mentioned scheme shown in FIG. 4E is actually a structure in which the flange and/or the claw structure at the gusset position are separated from the tray, and therefore, the shape of the through hole of the support sheet shown in FIG. 4E is also It is set with reference to the contour shapes shown in Figs. 5a to 5C described above. 13 201225208 It is understood that the various supporting schemes of the substrate shown in FIG. 3A to FIG. 5C can be interchanged in the loading positions of the upper and lower discs of the tray; that is, the above FIG. 3A to FIG. The mounting structure for carrying the substrate by electrostatic adsorption or the like shown in 3C can also be applied to the lower surface; similarly, the above-mentioned grooves and flanges and/or claws shown in FIGS. 4A to 5C are used. The mounting structure of the carrier substrate can also be applied to the upper disk surface. The general knowledge in the field can be flexibly operated according to actual needs, and will not be repeated here. Further, it can be understood that, in the tray provided by the present invention, the positional relationship of the loading positions on the upper surface and the lower surface may be set in a mutually corresponding manner or may be arranged in a mutually offset manner. Generally, the knowledgeer can set different mounting positions on the same tray according to the specific needs of the tray temperature field and the chamber airflow field distribution according to the actual application. «•月 Referring to Fig. 6, a schematic structural view of a specific embodiment of a substrate carrying device provided by the present invention is shown. In the present embodiment, the substrate carrying device is constituted by three trays arranged in parallel with each other, and is connected by a rotary joint mechanism 74 and each of the trays has a certain distance therebetween to facilitate the passage of the process gas. The above-described rotary joint mechanism 74 can drive the respective trays for synchronous rotational movement, or can individually drive the respective trays to move. When the respective trays are synchronously driven to rotate, the positions of the loading positions on the adjacent trays may be set in a corresponding manner, or may be set in such a manner as to be misaligned. For example, in the substrate carrying device shown in Fig. 6, the positions of the adjacent trays 71 and the loading positions on the tray 72 are oppositely disposed, and the positions of the loading positions between the tray 72 and the tray 73 are offset. Moreover, the head person can also set the position of the loading plate 201225208= on the upper and lower plates on the same tray as needed, to fully satisfy the process requirement I and refer to the specific structure of the bit bearing substrate in each tray. The schemes described in the above 3Α_5C are selected and set, and are not described herein. The material of the tray in the substrate carrying device provided by the present invention may include, but is not limited to, graphite, (iv) la alloy, etc., which are resistant to high temperature and chemically stable: 'When graphite is used as the material of the tray, preferably, the surface of the tray is sighed. Place a layer of Sic coating. In addition, the substrate carrying device provided by the present invention can be used to carry a substrate including a material such as sapphire, Ge, GaAs, GaN, plus or Si for a corresponding film preparation process. In the above drawings and embodiments, the structure of the substrate carrying device provided by the present invention is described by taking a circular tray as an example, but the present invention is not limited thereto, and the knowledgeable person may according to actual needs. However, the shape of each tray is deformed or improved' and the deformation and improvement are considered to be the protection scope of the present invention. Moreover, the shape of the loading position in the substrate carrying device provided by the present invention is not limited to a circular shape. When the shape of the substrate changes, the knowledge holder can generally perform the shape of the loading position on each tray. change. It should be noted that the substrate carrying device provided by the present invention can also be processed by means of collocation, and specifically, the rotation axis of the substrate carrying device is horizontal, so that the disk surfaces of the respective trays are vertical. Rotate or stand in a straight plane. In summary, the substrate carrying device provided by the present invention comprises at least one tray, and both disk surfaces of each tray can be used for carrying the substrate for processing. Therefore, the substrate carrying device provided by the present invention can carry more substrates for processing, and further increase the productivity of the device, and at the same time improve the process gas, compared with the currently used substrate carrying device of the same size. Effective utilization. Moreover, since the substrate carrying device provided by the present invention is applied, the capacity of the device is increased without increasing the size of the substrate carrying device, thereby facilitating effective control of the stability and uniformity of the airflow field and the temperature field by the process device. In turn, the desired process results can be obtained. Moreover, in a preferred embodiment, the substrate carrying device of the present invention further has a rotary attachment mechanism for driving the respective trays to synchronize or perform independent rotational movements, thereby effectively improving process uniformity. As another technical solution, the present invention also provides a substrate processing apparatus including a process chamber in which the above-described substrate carrying device of the present invention is disposed to carry a substrate during the process. In actual application t, the substrate processing device may be, but not limited to, a m〇cvd device. Since the substrate processing apparatus provided by the present invention is provided with the above-described substrate carrying device provided by the present invention. Therefore, for similar reasons, the substrate processing apparatus can have high throughput and high process gas utilization while ensuring process stability and uniformity, thereby reducing the cost of equipment and production. It is to be understood that I'in the embodiment is merely an exemplary embodiment employed in the light of the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made without departing from the spirit and scope of the invention, and such modifications and improvements are also considered to be within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing the structure of a conventional M0CVD process chamber. 201225208 Fig. 2 is a schematic view showing the structure of a tray in a substrate carrying device provided by the present invention. Fig. 3A is a structural schematic view showing the first substrate carrying mode adopted by the upper disk surface in the tray provided by the present invention. Fig. 3B is a structural schematic view showing the second substrate carrying mode adopted by the upper disk surface in the tray provided by the present invention. Fig. 3C is a structural schematic view showing the second substrate carrying mode adopted by the upper disk surface in the tray provided by the present invention. Fig. 4A is a structural schematic view showing the first substrate carrying mode adopted for the lower surface of the tray provided by the present invention. Fig. 4B is a structural schematic view showing the second substrate carrying mode adopted by the lower surface of the tray provided by the present invention. Fig. 4C is a structural schematic view showing a third substrate carrying mode adopted for the lower surface of the tray provided by the present invention. Fig. 4D is a structural schematic view showing a fourth substrate carrying mode adopted for the lower surface of the tray provided by the present invention. Fig. 4E is a structural schematic view showing a fifth substrate carrying mode adopted by the lower surface of the tray provided by the present invention. Fig. 5A is a schematic view showing the structure of a first type of claw used in the tray provided by the present invention. Fig. 5B is a schematic view showing the structure of a second type of claw used in the tray provided by the present invention. Fig. 5C is a schematic view showing the structure of a third type of claw used in the tray provided by the present invention. FIG. 6 is a schematic structural diagram of a substrate carrying device according to an embodiment of the present invention 17 201225208. [Main component symbol description] 1 large tray 2 small tray 30 tray 310 upper disk 31 1 loading position 320 lower disk surface 321 loading position 41 tray 42 tray 43 tray 410 upper disk surface 420 upper disk surface 421 loading piece 430 upper disk surface 431 Chip position 51 tray 52 tray 53 tray 54 tray 55 tray 511 first tray 512 second tray 521 lower disk surface 522 bonding surface 523 loading position 524 flange 525 loading channel 526 support piece 527 through hole 71 tray 72 tray 73 tray 74 rotary connection mechanism 80 substrate

18 S18 S

Claims (1)

201225208 七、申請專利範圍: l一種基片承載裝置,其係用於承載基片,其係包括至 少一個托盤,該托盤具有兩個相反的用於承載所述基片的 盤面。 2·如請求項丨所述之基片承載裝置,其中該盤面上設置 有多個用於放置該基片的裝片位。 3.如請求項2所述之基片承載裝置,其中該裝片位係為 與該基片形狀柄符合的凹槽或凸台或與該基片的盤面相平 齊的平面。 (如請求項2或3所述之基片承㈣置,其中該托盤係 以靜電吸附的方式將該基片固定在該裝片位上。 5.如請求項3所述之基片承載裝置,其中該凹槽與該盤 面相接觸的邊緣處設置有一凸爪和/或凸緣,藉由所述之凸 爪和/或凸緣而將該基片固定在該凹槽中。 6·如請求項5所述之基片承載裝置,其中該托盤係包括 可分離地貼合在一起的第一托盤和第二托盤,在該第一托 盤和/或第二托盤的貼合面上設置有一與該凹槽連通的裝片 通道;在裝/卸基片時,通過該製片通道而將基片放入該凹 槽中或從該凹槽中取出。 7·如請求項5所述之基片承載裝置,其中該托盤與該盤 面相鄰的側面上設置有-與該凹槽相連通的裝片通道;在 裝/卸基片時’通過該裝片通道而將基片放人該凹槽中或從 該凹槽中取出。 8·如請求項5所述之基片承載裝置,其中該&爪和,或 凸緣分布於該凹槽的部分邊緣處,該凹槽的未被該&爪和/ 201225208 或凸緣覆蓋的區域面積足以使基片通過;在裝/卸基片時, 使該基片通過該凹槽中未被該凸爪和/或凸緣覆蓋的區域進 入該凹槽内部,然後將該基片移動至該凸爪和/或凸緣所在 位置處’以藉由所述凸爪和/或凸緣將該基片固定於該凹槽 内0 9.如請求項8所述之基片承載裝置,其中該凸緣爲半圓 環狀。 10·如請求項3所述之基片承載裝置,其更包括一支撐 片,該支撐片可分離地貼合在該盤两上,並且在該支撐片 上設置有一與該凹槽相對應的通孔,該通孔的至少部分邊 緣將該基片固定在該凹槽内。 11. 如請求項2所述之基片承載裝置,其中位於同一托 盤的兩個盤面上的裝片位係為對稱或錯位設置。 12. 如請求項2或11所述之基片承載裝置,其中該基片 承載裝置包括至少兩個相互間隔疊置的托盤,相鄰托盤上 的裝片位係為相對或錯位設置。 13. 如請求項12所述之基片承載裝置,其更包括一旋轉 連接機構,用以將各個托盤間隔地連接在一起,藉以驅動 各個托盤進行同步或獨立地旋轉運動。 14. 如請求項丨所述之基片承載装置,其中該托盤的材 料包括石墨、鉬或鉬合金。 15. 如請求項14所述之基片承載裝置,其中該托盤係由 石墨材料製成,並且該基片承載裝置表面係具有Sic塗層。 16. 如請求項丨所述之基片承載裝置,其中該基片承載 裝置可承載的基片材料包括藍寶石、Ge、GaAs、GaN、SiC 20 s 201225208 或Si。 • 17.—種基片處理設備,包括一製程腔室,該製程腔室 • 内設置有如請求項1至16項中任一項所述之基片承載裝 置,用以在製程過程中承載基片。 八、圖式:(如次頁) 21201225208 VII. Patent Application Range: l A substrate carrying device for carrying a substrate, comprising at least one tray having two opposite disk faces for carrying the substrate. 2. The substrate carrying device of claim 1, wherein the disk surface is provided with a plurality of loading positions for placing the substrate. 3. The substrate carrying device of claim 2, wherein the loading position is a groove or a land that conforms to the shape handle of the substrate or a plane that is flush with the disk surface of the substrate. (A substrate holder according to claim 2 or 3, wherein the tray is electrostatically adsorbed to fix the substrate to the loading position. 5. The substrate carrying device according to claim 3 Wherein the groove is provided with a claw and/or a flange at the edge in contact with the disk surface, and the substrate is fixed in the groove by the claw and/or the flange. The substrate carrying device of claim 5, wherein the tray comprises a first tray and a second tray detachably attached together, and a fitting surface of the first tray and/or the second tray is disposed on the bonding surface a loading channel communicating with the groove; when the substrate is loaded/unloaded, the substrate is placed into or removed from the groove through the filming channel. 7. The method of claim 5 a substrate carrying device, wherein a side of the tray adjacent to the disk surface is provided with a loading channel communicating with the groove; and when the substrate is loaded/unloaded, the substrate is placed through the loading channel The substrate carrying device according to claim 5, wherein the & claw and/or flange are divided into At a portion of the edge of the recess, the area of the recess that is not covered by the & claw and/or 201225208 or flange is sufficient to pass the substrate; when the substrate is loaded/unloaded, the substrate is passed through the recess An area of the slot that is not covered by the tab and/or flange enters the interior of the recess and then moves the substrate to the position where the tab and/or flange are located to be by the tab and/or The substrate is fixed in the recess. The substrate carrying device according to claim 8, wherein the flange is semi-annular. 10. The substrate carrying device according to claim 3, The utility model further includes a support piece detachably attached to the two discs, and a through hole corresponding to the groove is disposed on the support piece, and at least a part of the edge of the through hole fixes the substrate 11. The substrate carrying device of claim 2, wherein the loading positions on the two disk faces of the same tray are symmetric or misaligned. 12. As claimed in claim 2 or 11. Substrate carrying device, wherein the substrate carrying device comprises at least two stacked brackets The mounting position on the adjacent tray is opposite or offset. 13. The substrate carrying device of claim 12, further comprising a rotary connecting mechanism for spacing the trays together The respective trays are driven for synchronous or independent rotational movement. 14. The substrate carrier of claim 1, wherein the material of the tray comprises graphite, molybdenum or a molybdenum alloy. 15. The substrate bearing of claim 14 The apparatus, wherein the tray is made of a graphite material, and the surface of the substrate carrier has a Sic coating. 16. The substrate carrier of claim 1, wherein the substrate carrier can carry the substrate Materials include sapphire, Ge, GaAs, GaN, SiC 20 s 201225208 or Si. 17. A substrate processing apparatus comprising a process chamber, wherein the substrate carrying device according to any one of claims 1 to 16 is provided for carrying a substrate during the process sheet. Eight, the pattern: (such as the next page) 21
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021081027A1 (en) * 2019-10-21 2021-04-29 Momentive Performance Materials Quartz, Inc. Wafer carrier for semiconductor processing

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2215282B1 (en) 2007-10-11 2016-11-30 Valence Process Equipment, Inc. Chemical vapor deposition reactor
CN104342751B (en) * 2013-08-02 2017-07-21 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber and MOCVD device
CN104195629A (en) * 2014-08-20 2014-12-10 中国科学院半导体研究所 Tower-type multichip epitaxial growth device
CN106948002B (en) * 2017-03-15 2019-07-09 南京国盛电子有限公司 The two-sided base construction of electromagnetic induction heating epitaxial furnace
CN108321115B (en) * 2018-01-23 2020-09-29 东莞市中镓半导体科技有限公司 Boat supporting structure for growth of wafer epitaxial substrate material
CN109332331A (en) * 2018-09-28 2019-02-15 芜湖华宇彩晶科技有限公司 Supporting and positioning device is used in a kind of cleaning of display screen
CN113088929B (en) * 2021-03-01 2022-05-20 中山德华芯片技术有限公司 MOCVD reaction chamber and application thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0330326A (en) * 1989-06-27 1991-02-08 Mitsubishi Electric Corp Semiconductor manufacturing apparatus
JP3006029B2 (en) * 1990-05-16 2000-02-07 株式会社島津製作所 Vacuum deposition equipment
JP3196657B2 (en) * 1996-09-18 2001-08-06 松下電器産業株式会社 Surface treatment device and surface treatment method
JP3582330B2 (en) * 1997-11-14 2004-10-27 東京エレクトロン株式会社 Processing apparatus and processing system using the same
WO1999036588A1 (en) * 1998-01-15 1999-07-22 Torrex Equipment Corporation Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors
JP2001007362A (en) * 1999-06-17 2001-01-12 Canon Inc Semiconductor substrate and manufacture of solar cell
JP2004091885A (en) * 2002-09-02 2004-03-25 Sharp Corp Apparatus for depositing thin film and method for depositing thin film using this apparatus
CN101328581B (en) * 2008-07-22 2010-12-01 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma processing apparatus and substrate carrier plate thereof
JP2010073823A (en) * 2008-09-17 2010-04-02 Tokyo Electron Ltd Film deposition apparatus, film deposition method and computer-readable storage medium
CN101740448B (en) * 2008-11-17 2011-04-27 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma processing equipment and substrate support plate thereof
CN101770932B (en) * 2009-01-04 2012-04-25 北京北方微电子基地设备工艺研究中心有限责任公司 Plasma process equipment
JP2011171329A (en) * 2010-02-16 2011-09-01 Panasonic Corp Substrate holding tray in plasma treatment, and plasma treatment method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021081027A1 (en) * 2019-10-21 2021-04-29 Momentive Performance Materials Quartz, Inc. Wafer carrier for semiconductor processing

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