TW201223957A - Magnesium bis(dialkyl amide) compound and method of producing magnesium-containing thin film using same - Google Patents

Abstract

The present invention relates to a magnesium bis(dialkyl amide) compound represented by general formula (1): (wherein R1 represents an isopropyl group or a branched alkyl group of 4 to 6 carbon atoms, and R2 represents a linear or branched alkyl group of 1 to 5 carbon atoms, but excluding those cases where R1 and R2 are both isopropyl groups, R1 and R2 are both isobutyl groups, and R1 is an isopropyl group and R2 is a methyl group), and also relates to a method of producing a magnesium-containing thin film using such a magnesium compound.

Description

201223957 VI. Description of the Invention: [Technical Field] The present invention relates to a novel bis(dialkylguanidinyl)magnesium compound, and the use of the magnesium compound by chemical vapor deposition (Chemical Vapor Deposition method) The method of producing a magnesium-containing film is hereinafter referred to as a CVD method. [Prior Art] As a magnesium compound for the production of a magnesium-containing film, for example, magnesium compounds such as calcined magnesium, burned magnesia, and magnesium diketonate have been studied (for example, refer to the patent document 丨~幻Among them, bis(cyclopentadienyl) or its related compounds are mainly used as compounds. On the other hand, as a titanium-containing film, a zirconium-containing film, a ytterbium-containing film, a film containing a film, etc. A raw material containing a gold-containing (tetra) film, and a compound having a two-chain ligand is proposed (see Patent Document 3). Further, a bis(dialkylguanidino) magnesium compound is also known, which is used for For example, a raw material for the production of a catalyst, a medicine, or a pesticide for polymerization, and the like, and the patent document 4). , 、 习 习 习 习 习 习 2002 2002 2002 2002 2002 2002 2002 2002 2002 2007 2007 2007 2007 2007 2007 2002 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 2007 [Patent Document 4] European Patent Application No. i No. 3158l [Non-Patent Document] 曰 (1978 [) Non-Patent Document 1U Extraction (5) Melon, V°L43, Na8, PP.1564·1566 [Invention Contents] [Problems to be Solved by the Invention] However, in the production of magnesium-containing products, the vapor pressure, heat 4 201223957 stability, reactivity, and other physical properties are not necessarily the most suitable, even at present. The use of (% < E. sinensis) magnesium can not be called as a sufficient town compound for the use of magnesium-containing thieves: therefore, - directly seeking vapor M, enthalpy, reactivity and other physical properties The town compound that is met. That is, the object of the present invention is to solve the above problems, and to provide an ionic compound which is an industrially applicable magnesium compound for producing a magnesium-containing film by a simple method, and more specifically, is suitable for CVD by CVD. The method of manufacturing magnesium-containing film. Further, an object of the present invention is to provide a method for producing a magnesium-containing film using the magnesium compound. The invention relates to the following matters. A bis(dialkylguanidinyl)magnesium compound RVMg represented by the formula (1), N/R1 I (1) R2 R2 _ (wherein R represents an isopropyl group or a carbon number of 4 to 6) Branched alkyl group, R2 Table 2 shows a money or branched filament having 1 to 5 carbon atoms. However, in the case where Ri and R are both isopropyl, R and R2 are isobutyl groups. The case, and the case where R1 is an isopropyl group and R- is a fluorenyl group.). A method for producing 2.7 kinds of bis(dialkylamino) magnesium compounds which are bis(dialkylguanidino) magnesium compounds represented by the above formula (1) The crucible manufacturing method is characterized by comprising the steps of: disposing a dialkyl magnesium compound represented by the general formula (2): Mg R and R 4 (2) (wherein R 3 and R 4 may be the same or different and independently of each other A linear or branched alkyl group having 1 to 10 carbon atoms.) A step of reacting with a diamine amine represented by the general formula (3) / R1

HN I (3) R2 201223957 (wherein R1 represents an isopropyl group or a branched alkyl group having 4 to 6 carbon atoms, and R2 represents a linear or branched alkyl group having 1 to 5 carbon atoms. However, the case where both Ri and R2 are isopropyl groups, the case where both R) and R2 are isobutyl groups, and the case where R1 is an isopropyl group and R2 is a fluorenyl group are excluded. 3. A method for producing a bis(monoalkyl amide) magnesium compound, wherein the bis(dialkyl amide) magnesium compound is a bis(dialkylguanidino) group represented by the above formula (1) A magnesium compound, which is characterized by comprising the steps of: using a dialkylamine represented by the formula (3) / R1

HN I (3) R2 (wherein R1 represents an isopropyl group or a branched alkyl group having 4 to 6 carbon atoms, and r2 represents a straight or branched group having 1 to 5 carbon atoms. Excluding Rl and propylene 曱 = ^ and ¥ are isobutyl groups, and Rl is isopropyl ^ base = should, Ling fine (4) indicates the second wire _ base clock combination

LiN-^ 丨2 (4) R2 (where R and R2 are synonymous with the above.) - Xi! !, ί(4) indicates a step of reacting a dialkyl guanamine lithium compound disk with a ruthenium (5) 矣 not one of ruthenium halides. / (5)

MgX2 (wherein, X represents a halogen atom. 4. Production of a magnesium-containing thin film. The production of a semi-bis(dialkylguanidinyl) magnesium compound as a two-layered film is produced by the above-mentioned general formula (1). Method of '',,, ' Λ,,, · α source by chemical vapor deposition method 5. A _ _ _ _ raw material comprising bis 6 201223957 C dialkyl decylamine represented by the above formula (1) Base) magnesium compound. [Effects of the Invention] The present invention provides a novel (a pyridyl) group of magnesium compounds which are particularly suitable for film formation by cvd*. With this magnesium compound, a magnesium-containing thin film can be produced by the c method with good film forming properties. [Embodiment] The bis(monoalkylamino)magnesium compound of the present invention is represented by the above formula (1). In the above formula (1), R1 represents a branched filament having a carbon number of from j to 6 such as an isopropyl group, a tertiary butyl group or a tertiary decylpentyl group, and represents a methyl group, an ethyl group, an isopropyl group, or the like. A straight-chain or branched alkyl group having a carbon number of 5 such as a tertiary butyl group, a tertiary sulfhydryl group or a neopentyl group. However, the case where both Ri and R2 are isopropyl groups, the case where both R1 and R2 are isobutyl groups, and the case where R1 is an isopropyl group and R2 is a fluorenyl group are excluded. _ Two R1 may be different, and two R2 may be different. However, since two compounds having the same R1 and the same two R2 are relatively easy to synthesize, it is preferable. The preferred embodiment of the present invention is as follows: R1 is a branched alkyl group having 4 to 5 carbon atoms, and R2 is a linear or branched alkyl group having a carbon number of 丨5. As Rl, ^ is not a secondary butyl group, a second sulfhydryl group, a neopentyl group. As R2, it is estimated that it is a methyl group, an ethyl group, an isopropyl group, a tertiary butyl group, a tertiary pentyl group or a neopentyl group. Preferably, it is a tertiary butyl group, a tertiary pentyl group, more preferably a tertiary butyl group; and R2 is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, more preferably a fluorenyl group or an ethyl group. , isopropyl, tert-butyl, tertiary pentyl, neopentyl. Soil The bis(dialkylguanidinium) magnesium compound of the present invention may, for example, be a compound represented by the following formulas (6) to (20). 7 201223957

The synthesis of the bis(dialkylguanidino)magnesium compound of the present invention can be carried out by the method represented by the following (A) or (B) (hereinafter, also referred to as the reaction of the present invention). 8 201223957

(wherein R1 and R2 are synonymous with the above, and R3 and R4 represent a linear or branched alkyl group having a carbon number of 丨 to 仞. Further, R3 and R4 may be the same or different. Further, X represents a halogen. Atom.) [Method (8)] The method (A) is a method in which a dicalcium-based magnesium compound is reacted with a dialkylamine to synthesize a bis(dialkylamide)-based compound. The dialkylmagnesium compound used in the reaction (A) of the present invention is represented by the above formula. In the formula (;2), R3 and R4 represent a decyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-l group, an isobutyl group, a tert-butyl group, a n-pentyl group, a tertiary pentyl group, A linear or branched alkyl group having 1 to 10 carbon atoms such as a neopentyl group or a n-decyl group. In addition, the rulers 3 and R4 may be the same or different. The dialkylmagnesium compound used in the reaction (A) of the present invention can be used as a commercially available product, and can be produced from magnesium metal by a known method. In the reaction (A) of the present invention, di(n-butyl)magnesium or n-butylethylmagnesium or the like is suitably used. The dialkylamine used in the reaction (A) of the present invention is represented by the above formula (3). In the formula (3), r1 and R2 correspond to R1 and R2 in the formula (1), respectively, and the above is synonymous. Therefore, as the dialkylamine used in the reaction (A) of the present invention, a tertiary 3-mercaptoamine, a tertiary butylethylamine, a tertiary butyl isopropylamine, Di-tertiary butylamine, secondary butyl tertiary pentylamine, di- or tertiary amylamine. 9 201223957 The above dialkylamine is used in an amount of from 1.5 to 3.0 moles, more preferably from 1.8 to 2 2 moles. Preferably, the reaction (A) of the present invention is in the presence of a solvent of the a w a ^ machine, and the antimony does not inhibit the reverse reaction. As the use, there may be mentioned, for example, diethyl _, ie, there is no particular limitation, but _ page; hexane, g-burn, cyclohexyl, methyl;: 曱2,, -, hydrocarbons, etc. An aliphatic group such as toluene or diphenylbenzene or the like may be used singly or in combination of two or more kinds. ή匕外五海4 Organic solvent can be described as relative to the two-filament magnesium b. The reaction (A) of the present invention is carried out by, for example, an amine, and an organic solvent-mixing, stirring, and compounding The reaction temperature in the case of dialkyl group is preferably _20 to 12 (rct is more square; ^ line. The reaction is particularly limited. Μ is G~(10)C 'reaction pressure is not [method (B)] • chemistry: Γ A method of using a bis-indole oxime and a bis(indenylamino)magnesium compound. However, it is possible to use lithium or the like, but it is preferably a n-butyl group. Clock, tertiary butyl group from the synthesis of di-amines, the reaction table = the use of r is poured into the formula (3) the center of the table is not a gas atom, chlorine atom, bromine atom, cesium atom and other odontogens 10 201223957 Preferably, the chlorine atom is preferably a chlorine atom. 1 mole, preferably, the amount of the second alkyl group is the L5 to 3.0 moles, more preferably 18 to ^= For the dihalogenated oxime, more than mrn^ can be enumerated: for example, diethyl ether, tetrahydrofuran,: other restrictions, however ethers; hexane, heptane, cyclohexane, acetonide, ethane, two Oxygen park a hydrocarbon, an aliphatic hydrocarbon such as toluene or xylene, or a mixed solvent such as an ethylcyclohexanone or a mixed solvent of an aliphatic hydrocarbon, or a mixture of an aliphatic hydrocarbon and an aliphatic hydrocarbon. The use of θ 卜 '§ 寻 organic solvent can be used in the above organic solvent phase 1 ~ I00g, more preferably WOge in the _ alkylamine Ig, preferably the hospital fine amine _ _ _ _ anti-base _ In the case of the dentate, it is preferred to use the amount of lg, relative to the reaction of the two inventions (9), for example, by using a sulphurylamine, a sulphur, and a succinct The guanamine group is subjected to a compound, which is coupled with a ruthenium, a ruthenium, a reaction, a fine fiber, a second coffee, and a method of: a second enthalpy connection, a second reaction, etc. The reaction temperature during the reaction is better than 1 = 2 Let 〇~50 (:, the reaction pressure is not particularly limited. ^ c, better before the reaction with the magnesium hydride, can be - 吏 醯 alkyl amide lithiation directly using the reaction liquid, and It is also possible to appropriately remove the organic solvent. Further, and/or add the amine compound which can be reacted by the reaction (A) or (b) of the present invention. After the end of the reaction, the magnesium compound is separated and refined by sublimation, recrystallization, column chromatography, etc., such as sublimation, recrystallization, column chromatography, and the like. 50% of the bis(dialkyl decylamine 201223957 is produced in the middle of the weiwei compound and thus is preferably a squid of the saplings, the liquid is post-treated, etc. 反 反 进行 反 反 反 反 反It is possible to form a smectic film by a good film forming property such as CVD Z2. The deposition method may be carried out by a known method or the like, for example, Normal dust - from the human body) === These gases (also include two: in the sample, the plasma CVD method deposits magnesium-containing film. Gasification, iron and you must combine the double (secondary base-based) magnesium in order to form a thin film, 'for example, ί ^^= double (dimethoate fine compound gasification will be diluted outside the method) It is also possible to use a pump for liquid transportation, for example, a calcined, a cyclohexane, a methylcyclohexane-solution, a solution, a gas-based sulfhydryl-based magnesium compound, and a gas-based diamine-based amine. The magnesium compound is deposited on the magnesium-containing film ill 9_ 4, the deposition condition 'for example, the reaction line _ dust force is preferably ira~200 kPa > f > f4 * ι λώ i , λ sn Qr) n〇n in another Tuma 10Pa~u〇kPa; the temperature of the film-forming object is preferably two (2). 0; the gasification of the bis(dialkyl-based) compound is preferably 3〇~25 (rc, more 6()~2〇(rc. 童/μd as ί for deposition) Magnesium__Oxygen source of total gas (for example, gas t water or alcohol vapor, or a mixed gas of such gases) or reducing 12 201223957 gas (for example, sewing money, or a mixture of the Wei body) The content ratio is preferably from 3 to 99% by volume, more preferably from 5 to 98% by volume. I. The present invention will be specifically described by way of examples, but the scope of the present invention is not limited thereto. EXAMPLES 1 Example 1 (Method (A); Synthesis of bis(tertiary butyl decyl guanidino) magnesium (compound (6))) Under a argon atmosphere, with a stirring device, a thermometer, and a drop After adding 65 g of metal town (〇23 m〇i) and 2 ml of diethyl ether to the inner tank of the liquid funnel, 3.0 g (21 mmol) of bromobutanol was slowly dropped. Then, diethyl ether was added. Saki (10) and 25 g of bromobutane (0-18 mol) were slowly dropped, and the mixture was reacted at 4 ° C for 2 hours while stirring, and then 55 g (〇.62 mol) of dioxane was added, and the mixture was stirred at 4 Torr. Make it react 2 small After the end of the reaction, the reaction solution was filtered under an argon atmosphere, and the filtrate was agglomerated under dust reduction. The concentrate was vacuum dried while heating to obtain 22 g of dibutylmagnesium (isolation yield; 80%). Next, in a argon atmosphere, a previously obtained dibutylmagnesium 7 〇g (5〇mm〇1) and a gargene 70 ml were placed in a 200 ml flask equipped with a stirrer, a thermometer, and a dropping funnel. While maintaining the liquid temperature at around 25 ° C, the tributyl decylamine 10 g (O.llmol) was slowly added dropwise while stirring for 3 hours. After the reaction was completed, the reaction solution was concentrated. Sublimation (14 Torr. 〇, 20 Pa) under reduced pressure afforded bis (tert-butyl decyl fluorinyl) magnesium 6 4 g (yield: 66%) as a white solid. The secondary butyl fluorenylamino group shows the following compounds of the new properties: h-NMRi; tetrahydro 0 funan-d8 'δ(ρρπι); 2.58(3H, s), 1.03 (9H, s) melting point; 140 to 141 ° C. Example 2 (Method (A); Synthesis of bis(tertiary butylethylguanidino) magnesium (compound (7))) except Example 1 The reaction was carried out in the same manner as in Example 1 except that the dialkylamine was changed to a tributyl butyl ethylamine (1. llmol). As a result, a bis (tertiary butylethyl hydrazine) was obtained as a white solid of 13 201223957. Amino)magnesium 5.8g (isomeric yield; 52%). Further, 'bis(tertiary butylethylguanidino)) magnesium is a novel compound which exhibits the following physical properties. 'iH-NMR(tetrahydroanthracene)喃-d8, δ(ρριη)); 2.90 (2Η, q, 6.8Hz), l.〇7(9H, s), 0.97(3H, t, 6.8Hz) -

Melting point; 75~78 °C Example 3 (method (B); synthesis of bis(tertiary butyl isopropyl guanyl) magnesium (compound (8))) under argon environment with a scrambler, thermometer And a 100 ml flask of the dropping funnel was added with tributyl isopropylamine i.8 g (16 mm 〇1) and Gingxuan 30 ml. Then, while maintaining the liquid temperature at around 25 ° C, a n-butyl hexane/hexane solution (10 mmol) of ι.6 πιοΐ/ΐ was slowly dropped, while stirring was carried out at 25. 〇 Let it react for 2 hours. After the completion of the reaction, the reaction mixture was concentrated under reduced pressure to give yt. Next, 0.40 g (4.2 mmol) of vaporized magnesium and tetrahydropyrene was added to a flask equipped with a stirrer, a thermometer, and a dropping funnel of 5 〇ml. Next, while maintaining the liquid temperature at around 25 C, 10 ml of a solution of 1.0 g (8.3 mmol) of a tetrachloro-alpha valerate of a tertiary butyl isopropyl-branched amine chain was slowly dropped, and the mixture was allowed to stand at 25 ° C. It was allowed to react for 8 hours. After the completion of the reaction, the reaction solution was concentrated under reduced pressure, and then 20 ml of hexane was added to the concentrate, and the mixture was filtered. The filtrate was concentrated under reduced pressure, and the concentrate was evaporated under reduced dust (120 ° C, 5.7 Pa) to give a pale yellow liquid of bis(tri-butyl isopropyl phthalamide) magnesium 0.53 g. (single yield; 5〇%). In addition, the bis(secondary butyl isopropylamino) towns show novel compounds of the following physical properties. b-NMR (tetrahydrofuran_d8, δ(ρΡιη)); 2·99 (1Η, sept, 6·6Ηζ), U4(9H, s) '0.99 (6Η, d, 6.6Hz) Example 4 (Method (B (Synthesis of bis(tris-tert-butyltris-pentylguanidino)magnesium compound (10))) In a argon% atmosphere, in a 100 ml flask equipped with a stirring device, a thermometer, and a dropping funnel Adding tertiary butyl tertiary pentylamine Ug (8 〇mm〇1) and heptane 14 201223957 / · 15ml ' while slowly maintaining the liquid temperature around 25 〇c, slowly dropping i n-butyl group / The alkane solution was 5. 〇ml (8.〇mm〇l) and was stirred at 25 while stirring. 〇 Let it react for 2 hours. After the completion of the reaction, the reaction mixture was concentrated under reduced pressure to give <RTI ID=0.0>> Next, a glass magnesium hydride solution of 16 g (1.7 mmol) and tetrahydrofuran i〇m b was placed in a flask equipped with a stirring apparatus, a thermometer, and a dropping funnel of 5 〇mi to maintain the liquid temperature at 25. (: Near, while slowly dropping a third butyl tertiary pentyl guanidinium lithium 0,51g (3.4mm 〇l) in tetrahydrofuran solution while stirring - two reactions for 8 hours. After the reaction is over, After concentrating the reaction mixture, hexane 2 〇mi/, was added, and the mixture was filtered after stirring. The filtrate was concentrated under reduced pressure to give a pale yellow solid bis(di-butyl butyl-di- pentylamine). .31g (isolation yield;. In addition, bis (tri-butyl butyl tertiary amyl guanidino) magnesium is a novel compound exhibiting the following physical properties. h-NMR (tetrahydrofuran_d8 q, 7.3 Ηζ), 1.20 (; 18 ΡΙ, s), 1.12 (12 Η, s), 0.85 (6 Η, t, 7.3 Ηζ) melting point; 170 ° C above Example 5 (deposition experiment; manufacture of magnesium-containing film) utilized in Example 1. The obtained bis(tertiary butyl decyl guanidino) magnesium (compound (6)) was subjected to a deposition experiment by a CVD method, and the properties of the film formation were evaluated. In the deposition test, the use of Fig. 1 was used. The device shown. The deposition conditions and the characteristics of the film are as follows. (Deposition conditions) Magnesium raw material; bis(tertiary butylmethyl guanamine) magnesium (compound) Temperature; loot He carrier flow; lOOsccm oxygen flow; lOsccm substrate material; SiO2/Si substrate temperature; 300 °C reaction system pressure; 1.33 kPa deposition time; 30 minutes 15 201223957 (film characteristics (XPS depth) Measurement)) film thickness; XPS analysis of 5Qnm or more; carbon content of magnesium oxide film; no nitrogen content detected; no device shown in Fig. 1 having the structure described below, which is maintained by the constant temperature bath 8 In the magnesium raw material container (gasifier) 7 of the temperature, the magnesium compound is heated to vaporize the helium gas, and is discharged from the raw material container: 7 together with the helium gas introduced through the mass flow controller 4. The discharge from the raw material container 7 is performed. The gas is introduced into the reactor 9 together with the helium gas introduced via the mass flow controller 5. On the other hand, the oxygen of the reaction gas is also introduced into the reactor 9 via the mass flow controller 6. The reaction is monitored by a pressure gauge 12. The pressure in the system is controlled by a switch of a valve before the vacuum pump 14 to a predetermined pressure. The central portion of the reactor 9 has a magnesium which can be introduced into the reactor 9 by means of a heater. Compound The central portion of the reactor is oxidatively thermally decomposed on the surface of the substrate 10 heated to a predetermined temperature by the heater 11, and a magnesium-containing film is formed on the substrate 10. The gas discharged from the reactor 9 is collected by 'by' The trap 13 and the vacuum pump were discharged into the atmosphere. Comparative Example 1 (deposition test; production of magnesium-containing film) Using bis(cyclopentadienyl) magnesium, the same procedure as in Example 5 was carried out. The deposition of the CVD method was evaluated and the properties of the film formation were evaluated. The deposition conditions and film systems are shown below. In addition, deposition experiments were carried out by adjusting various conditions so that the amount of raw materials supplied was in accordance with the actual conditions. (deposition conditions)

Magnesium raw material; bis(cyclopentadienyl)magnesium gasification temperature; 30 °C He carrier flow rate; lOsccm diluted He flow rate; 90 sccm oxygen flow rate; lOsccm substrate material; SiO 2 /Si substrate temperature; 300 ° C 16 201223957 reaction system Pressure; lOTorr (about 1.33 kPa) deposition time; 30 minutes (film characteristics (XPS depth measurement)) film thickness; XPS analysis above 50 nm; magnesium oxide film carbon content; 3 〇% ($ carbon atom conversion) nitrogen content ; not detected (originally in the raw material, there is no nitrogen source. From the above results, it was determined by the invention of "the carbon atom or nitrogen atom without a carbon atom". [Industrial use possibility] Ding sauce: 2 Invention j can provide a novel compound which can produce a film containing a film by a simple method, and more specifically, can provide a magnesium compound suitable for borrowing and coating a magnesium-containing film. Further, by using the magnesium compound, A method of producing a film containing a film can be produced by a CVD method on a film-forming object. A double compound can be used as a compound for producing a magnesium-containing film, a catalyst for polymerization, a medical or a pesticide, and the like. [Simple description of the diagram] π XΪ” is a structure which is not used in the embodiment to form a deposition apparatus containing a magnesium thin film by using a bis(dialkylguanidino)magnesium 5 coating. [Main component symbol description] 1 carrier gas ( He) 2 Dilution gas (He) 3 Reaction gas (02) 4 Mass flow controller 5 Mass flow controller 6 Mass flow controller 7 Magnesium raw material container (gasifier) 17 201223957 8 Constant temperature tank 9 Reactor 10 Substrate 11 Reaction Heater 12 pressure gauge 13 collector 14 vacuum pump

Claims (1)

201223957 VII. Patent application scope: .1. A bis(dialkylguanidinyl)magnesium compound which is represented by the formula _ and formula (1) (υ R2 R2 (wherein R1 represents isopropyl, Or a branched carbon of 4 to 6 carbon atoms represents a linear or branched alkyl group having 1 to 5 carbon atoms; however, when both R 2 are isopropyl, R 1 and R 2 are isobutyl groups. In the case where the f group and R2 are a methyl group) ^ is a method for producing a bis(dialkylguanidinium) magnesium compound of isopropyl-2, which is a patent application In the first aspect, the formula (丨) represents a dialkylguanidinium) magnesium compound. The production method is characterized in that the following formula is included to make the compound of the dicalcinyl group represented by the formula (7) Formula (3) represents the step of the second amine burning reaction; a soil R3 " Mg, R4 (2) (wherein: R3 and R4 may be the same or different 'separately independent of each other, the number of atoms W0 linear chain Or R1 HNI R2 (3) (wherein R1 represents an isopropyl group or a branched group having 4 to 6 carbon atoms, and r2 represents a carbon source; a straight or branched alkyl group of 1 to 5; however, the case where both Ri and R2 are isopropyl groups, R1 and R2 are isobutyl groups, and Ri is isopropyl and R2 is 曱Base case); F (sound, NI R2) R1 (1) 19 201223957 (wherein 'R1 and R2 are synonymous with the above). 3. A method for producing a bis(dialkylaminoamine) magnesium compound, the bis(dialkyl amide) compound, which is represented by the formula (1) a dialkyl guanidinium) magnesium compound, the method of manufacture comprising the steps of: reacting a dialkylamine represented by the formula (3) with an alkyllithium to synthesize a hospital base represented by the formula a step of a guanamine-based compound; and /R1 HN (3) I R2 represents a group of 3 or a branched alkyl group having 4 to 6 carbon atoms, and R 2 r 2 is a case of a fine group, RI and a group; Excludes and the base and R2 is shifted); the difference is isopropyl LiN/R r2 (4) and the R2 system is synonymous with the above); (5) (1, X represents a halogen atom). R<M/ Mg, /R1 N , N〆R2 R2 (1) (wherein R1 and r2 are the same as those described above for the production of a magnesium-containing film). The bis(dialkyl guanamine) magnesium compound is produced by the method of manufacturing a magnesium-containing film according to the first method of the patent application Γ as a magnesium supply source by chemical vapor deposition 20 201223957 5. A raw material for forming a magnesium thin film comprising the bis(dialkylguanidinium) magnesium compound as in the first aspect of the patent application. twenty one